JP7280665B2 - 銅ナノ粉、銅ナノインク、および導電膜形成方法 - Google Patents
銅ナノ粉、銅ナノインク、および導電膜形成方法 Download PDFInfo
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- JP7280665B2 JP7280665B2 JP2018090112A JP2018090112A JP7280665B2 JP 7280665 B2 JP7280665 B2 JP 7280665B2 JP 2018090112 A JP2018090112 A JP 2018090112A JP 2018090112 A JP2018090112 A JP 2018090112A JP 7280665 B2 JP7280665 B2 JP 7280665B2
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- copper
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- 239000010949 copper Substances 0.000 title claims description 53
- 238000000034 method Methods 0.000 title claims description 25
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 47
- 229910052698 phosphorus Inorganic materials 0.000 claims description 47
- 239000011574 phosphorus Substances 0.000 claims description 47
- 239000002245 particle Substances 0.000 claims description 33
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 26
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- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 40
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Description
本実施形態に係る含リン銅ナノ粉は、10nm以上100nm未満の平均粒子径を有する。含リン銅ナノ粉が当該範囲の平均粒子径を有する場合、光焼成によって焼結させることができるようになる。含リン銅ナノ粉は、リン(P)を含有している。少なくとも一部のリンは、含リン銅ナノ粉に固溶している。本実施形態においては、含リン銅ナノ粉は、0.15mass%以上のリン(P)を含有している。0.15mass%以上のリンを含む含リン銅ナノ粉は、リンを含有していない銅ナノ粉と比較して、光焼成焼結エネルギーを低下させることができる。それにより、PET(ポリエチレンテレフタレート)等の低耐熱性基材上に低ダメージで導電膜を形成することが可能となる。これは、含リン銅ナノ粉がリンを含有することによって焼結開始温度が低くなるからであると考えられる。また、リンは界面活性の性質を有して含リン銅ナノ粉表面に集まるため、焼結を阻害する酸素が含リン銅ナノ粉表面に付着しにくくなるからであると考えられる。
本実施形態に係る銅ナノインクは、上述した含リン銅ナノ粉と、溶剤と、分散剤とを有している。
図1(a)~図1(d)は、実施形態に係る導電膜形成方法について例示する図である。図1(a)で例示するように、基材10上に、銅ナノインクの液膜20aを印刷法などによって形成する。
含リン銅ナノ粉は、例えば、銅リン合金原料から製造することができる。銅リン合金原料の生成に当たり、銅原料として例えばJIS規格C1020無酸素銅やC1011電子管用無酸素銅、C1100タフピッチ銅などの高純度の銅であって、それぞれ条、線、板、管、塊、球、粒などの各形状のものと、リン原料としてリン化銅(I)や含リン銅などのリン濃度既知のものであって、それぞれ条、線、板、管、塊、球、粒などの各形状のものを混合して用いることができる。例えば、各原料は、目的のリン濃度になるように、条、線、板、管、塊、球、粒などの各形状の原料それぞれをさらに切断や減肉、粉砕などによって都合のよい重量に加工し、それらを適宜添加したり、減じたりして適当な重量になるように量り取って混合する。
以下、上記実施形態に係る含リン銅ナノ粉を作製した。実施例1では、リン濃度を0.155mass%とし、酸素濃度を0.67mass%とし、BET比表面積から換算した平均粒子径を38nmとした。実施例2では、リン濃度を0.175mass%とし、酸素濃度を1.10mass%とし、BET比表面積から換算した平均粒子径を40nmとした。実施例3では、リン濃度を0.283mass%とし、酸素濃度を0.54mass%とし、BET比表面積から換算した平均粒子径を29nmとした。実施例4では、リン濃度を0.297mass%とし、酸素濃度を0.80mass%とし、BET比表面積から換算した平均粒子径を43nmとした。実施例5では、リン濃度を0.262mass%とし、酸素濃度を0.71mass%とし、BET比表面積から換算した平均粒子径を44nmとした。なお、比較例1では、リン濃度を0mass%とし、酸素濃度を0.56mass%とし、BET比表面積から換算した平均粒子径を39nmとした。比較例2では、リン濃度を0.158mass%とし、酸素濃度を1.20mass%とし、BET比表面積から換算した平均粒子径を38nmとした。比較例3では、リン濃度を0.231mass%とし、酸素濃度を3.00mass%とし、BET比表面積から換算した平均粒子径を43nmとした。
Claims (5)
- 平均粒子径が10nm以上100nm未満の銅ナノ粉であって、
リンを0.15mass%以上含有し、
前記銅ナノ粉の酸素濃度は、0.54mass%以上1.1mass%以下であることを特徴とする銅ナノ粉。 - 前記銅ナノ粉の平均粒子径は、29nm以上44nm以下であることを特徴とする請求項1記載の銅ナノ粉。
- リンを0.15mass%以上0.175mass%以下含有することを特徴とする請求項1または請求項2に記載の銅ナノ粉。
- 請求項1から請求項3のいずれか一項に記載の銅ナノ粉と、
溶剤と、
前記銅ナノ粉を前記溶剤中で分散させる分散剤と、を備えることを特徴とする銅ナノインク。 - 請求項4に記載の銅ナノインクの皮膜を物体表面に形成し、
前記皮膜を乾燥させ、
乾燥した前記皮膜に光を照射する光焼成によって導電膜を形成する、ことを特徴とする導電膜形成方法。
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