JP7296122B2 - Heat radiators and heat radiators for power semiconductors - Google Patents
Heat radiators and heat radiators for power semiconductors Download PDFInfo
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Description
天然黒鉛と銅の複合材における焼結体をカットした放熱板本体の外周に薄銅板あるいはメッキ処理してなる放熱体及びパワー半導体用放熱体に関するものである。 The present invention relates to a heat radiator and a heat radiator for power semiconductors, which is obtained by cutting a sintered body of a composite material of natural graphite and copper, and plating the outer circumference of the heat sink main body with a thin copper plate or plating.
上記カットした放熱板本体を例えばパワー半導体(IGBT)に使用した時、ろう付等の加工ができない。
また、放熱板本体から天然鱗片状黒鉛や銅粉が銅によって炭素を包んでいる状態のため、表面に現れた炭素(銅)は剥離しやすく、周囲に落下する危険性があり、周囲に回路等の通電部がある場合はショートすることがあり、実用上問題がある。
さらに、IGBTを使用する時、下面に通電する素材として銅板を設けている。しかしながら、銅の熱膨張率は17.7×10-6/kと高く、IGBTや下面に設ける絶縁素材
形してしまう。When the heat sink main body cut as described above is used for, for example, a power semiconductor (IGBT), processing such as brazing cannot be performed.
In addition, the carbon (copper) that appears on the surface of the heat sink body is easily peeled off because the carbon is wrapped in copper by natural flake graphite and copper powder, and there is a danger that it will fall on the surroundings. If there is a current-carrying part such as a short-circuit, there is a problem in practical use.
Furthermore, when using the IGBT, a copper plate is provided as a material to conduct electricity on the lower surface. However, the coefficient of thermal expansion of copper is as high as 17.7×10 −6 /k, and the insulating material provided on the IGBT and the bottom surface
shape.
上記に述べたように、現有する放熱板本体では特にパワー半導体(IGBT)に使用する場合は、ショート等の危険がある。
本発明は、このような従来の構成が有していた問題を解決しようとするもので、放熱板本体(焼結)の外周の一部あるいは全部に薄銅板を設けたり、全周をメッキ処理することにより、炭素(鱗片状黒鉛等)が剥離しにくく、通電を必要とする箇所に使用できる。As described above, there is a risk of short-circuiting or the like with the existing radiator plate main body, especially when it is used for a power semiconductor (IGBT).
The present invention is intended to solve the problems of such a conventional structure. By doing so, carbon (flaky graphite, etc.) is less likely to peel off, and it can be used in places where electricity is required.
本発明は、上記目的を達成するために、天然鱗片状黒鉛と銅粉の複合材を層状に積層して得られる焼結体を垂直方向あるいは水平方向にカットしてなる放熱板本体の上下面に、ワイヤーブラシにて天然鱗片状黒鉛を取り除いた後、銅粉を塗布し、焼結してなる。
前記放熱板本体を90°倒した状態の上下面に、薄銅板を設けてなる。
前記放熱板本体の外周全体を包着すべく、薄銅板の外縁を折り曲げ蓋状としたものを2箇所に設ける。
前記放熱板本体の全面に通電メッキ処理してなる。
放熱体をパワー半導体に取り付けてなる。In order to achieve the above object, the present invention provides a radiator plate main body made by cutting vertically or horizontally a sintered body obtained by layering a composite material of natural flake graphite and copper powder. Second, after removing the natural scale-like graphite with a wire brush, copper powder is applied and sintered.
A thin copper plate is provided on the upper and lower surfaces of the radiator plate main body which is tilted at an angle of 90°.
In order to wrap the entire outer circumference of the heat sink main body, the outer edge of the thin copper plate is bent to form lids at two locations.
The entire surface of the radiator plate body is electroplated.
A radiator is attached to a power semiconductor.
1)、天然鱗片状黒鉛と銅粉の複合材を層状に積層して得られる焼結体を垂直方向あるいは水平方向にカットしてなる放熱板本体の上下面に、ワイヤーブラシにて天然鱗片状黒鉛を取り除いた後、銅粉を塗布し、焼結してなることにより、鱗片状黒鉛が剥離しにくくなり、IGBT等接合においてショートの危険性が極力抑えられる。
2)、焼結体をカットした放熱板(90°倒した)の上下面に薄銅板を設けることにより 、特にIGBT等の接合においては、薄銅板によりろう付が可能で通電も良好でありな
かつ放熱機能と導電機能を高機能化している。
3)、放熱板の上下及び外周面全体を薄銅板で包み込むことにより、側面より天然鱗片状 黒鉛等が落下することがなく、安全・安心して使用できる。
4)、放熱板の全周を通電メッキ処理することにより、炭素が落下することなく、かつ、 天然鱗片状黒鉛等との密着性が高いため、より冷却性及び通電性を高めてなる。1) A sintered body obtained by laminating a composite material of natural flake graphite and copper powder in layers is cut vertically or horizontally to form natural flakes on the upper and lower surfaces of a heat sink main body with a wire brush. After the graphite is removed, copper powder is applied and sintered, so that the scale-like graphite is less likely to peel off, and the risk of short-circuiting in joining IGBTs can be minimized.
2) By providing thin copper plates on the upper and lower surfaces of the heat sink (tilted 90°) cut from the sintered body, especially in joining IGBTs, etc., brazing can be performed with thin copper plates, and the current flow is good.
In addition, the heat dissipation function and the conductive function are highly functional.
3) By wrapping the upper, lower, and outer peripheral surfaces of the heat sink with thin copper plates, natural flake-like graphite, etc., will not fall from the sides, and the heat sink can be used safely and securely.
4) By electroplating the entire periphery of the heat sink, the carbon does not fall off and the adhesion to natural flake graphite is high, so the cooling and electrical conductivity are improved.
まず、本発明の放熱板本体について説明する。
天然鱗片状黒鉛TKと銅粉DFの複合材を層状に積層(Z方向)にして得られる焼結体S(図5)を垂直方向にカットしたブロック状の垂直放熱板本体SHを図6に示す。
また、水平方向にカットしたブロック状の水平放熱板本体HHを図7に示す。First, the heat sink main body of the present invention will be described.
FIG. 6 shows a block-shaped vertical heat sink main body SH obtained by vertically cutting a sintered body S (FIG. 5) obtained by laminating a composite material of natural flake graphite TK and copper powder DF in layers (in the Z direction). show.
FIG. 7 shows a block-shaped horizontal heat sink main body HH cut in the horizontal direction.
この焼結体Sは、熱伝導率・強度・電気伝導率・熱膨張に異方性が見られる。
この異方性を有効的に使用する方法が、焼結体Sの切断方向に委ねられる。
例えば、Y方向及びX方向に垂直放熱板本体SH及び水平放熱板本体HHを使用した場合、熱伝導率は800w/mK以上であり、Z方向においては60w/mKとかなり低い。
なお、曲げ強度においては、Z方向が強く、Y方向及びX方向は弱い。
よって、使用目的に応じて切断方向を選択するものである。The sintered body S exhibits anisotropy in thermal conductivity, strength, electrical conductivity, and thermal expansion.
The method of effectively using this anisotropy depends on the cutting direction of the sintered body S.
For example, when the vertical heat sink body SH and the horizontal heat sink body HH are used in the Y direction and the X direction, the thermal conductivity is 800 w/mK or more, and is considerably low at 60 w/mK in the Z direction.
The bending strength is strong in the Z direction and weak in the Y and X directions.
Therefore, the cutting direction is selected according to the purpose of use.
本発明の垂直放熱板本体SH(ブロック状)・水平放熱板本体HH(ブロック状)は、天然鱗片状黒鉛と銅粉は互いに反応(圧着の状態)を示さず、銅粉により天然鱗片状黒鉛を包んでいる(コーティングしている)ため、外周の天然鱗片状黒鉛や銅粉が剥離(欠落)することがある。 In the vertical heat sink body SH (block shape) and horizontal heat sink body HH (block shape) of the present invention, the natural flake graphite and the copper powder do not react with each other (the state of crimping), and the natural flake graphite is formed by the copper powder. Since it is wrapped (coated), the outer peripheral natural flake graphite and copper powder may peel off (miss).
これを防止するため、以下の発明を行った。
図1に示すように、上記垂直放熱板本体SHを90°に倒した状態で使用する。つまりY方向の熱伝導率が良好な方向である。
1は、このブロック状の垂直放熱板本体SHの側面SMをワイヤーブラシにて天然鱗片状黒鉛を取り除いた後、銅粉を側面SMに塗布し、焼結SK(通電焼結により加工するもので、例えば、特開平9-53103号公報参照)した放熱体(必要に応じて薄く水平にカットした薄板状の垂直放熱板本体SH1)で、パワー半導体用放熱体として使用するものである。(図1)
次に、放熱体21は、上記放熱体1の上面及び下面に厚さ0.05mm~0.1mmの薄銅板2を設けて(密着して)なる放熱体である。(図2)
この放熱体21は、図8にあるようにパワー半導体(IGBT)Iの下面にハンダ付(ろ
Nに取り付けてパワー半導体用放熱体として使用するものである。In order to prevent this, the following invention was made.
As shown in FIG. 1, the vertical radiator plate main body SH is used in a state of being tilted at an angle of 90°. In other words, the thermal conductivity in the Y direction is good.
1 removes the natural scale-like graphite from the side surface SM of the block-shaped vertical heat sink main body SH with a wire brush, then coats the side surface SM with copper powder, and sinters SK (processed by electrical sintering). (See, for example, Japanese Patent Application Laid-Open No. 9-53103) (a thin plate-like vertical heat sink main body SH1 cut horizontally as necessary), and is used as a heat sink for power semiconductors. (Fig. 1)
Next, the
This
It is attached to N and used as a heat sink for power semiconductors.
なお、一般的な銅板の熱膨張率は17.7×10-6/Kで、本発明の放熱体1は4~1
つまり、従来のように銅板のみであれば、熱膨張率に大きな差があり、変形する危険性がある。
これに対して、本発明の放熱体21は薄銅板2のため熱膨張に対する応力が少なく、かつ垂直放熱板本体SH1は絶縁材Sと熱膨張が近いため変形が少ない。
かつ、銅板は熱を持ちやすいが、放熱体21は熱伝導率が高く放熱効果が高い。Incidentally, the coefficient of thermal expansion of a general copper plate is 17.7×10 −6 /K, and the
In other words, if there is only a copper plate as in the conventional case, there is a large difference in coefficient of thermal expansion, and there is a risk of deformation.
On the other hand, since the
In addition, although the copper plate tends to retain heat, the
つぎに、放熱体31について説明する。
垂直放熱板本体SH2は、上記垂直放熱板本体SH1と同様で、その外周全体を包着(密着)すべく、上記と同様な薄銅板22の外縁を折り曲げ、蓋状としたものを上下に設けてなるものである。(図3)Next, the
The vertical heat sink main body SH2 is similar to the vertical heat sink main body SH1. In order to wrap (adhere) the entire outer circumference of the vertical heat sink main body SH2, the outer edge of the same
この放熱体31も、上記と同様な使用を行うことにより、効率よい電気伝導・熱膨張・放熱を行うことができる。
かつ、全周が薄銅板22で包まれているため天然鱗片状黒鉛や銅粉が落下することがない。This
In addition, since the entire circumference is wrapped with the
つづいて、放熱体41について説明する。
放熱体41は、上記と同様な垂直放熱板本体SH3の外周(必要に応じて研磨しなくてもよい)に、通電可能なメッキ処理32を行ったもので、Niメッキ・Auメッキ・Agメッキ・Cuメッキ等であり、厚みは数ミクロンとする。(図4)
これも同様にIGBTに使用するもので、外周全体をメッキ処理しているため天然鱗片状黒鉛の落下は皆無であり、必要に応じて熱伝導率や熱膨張率の異なるものを使用できる。Next, the
The
This is also used for IGBTs, and since the entire outer periphery is plated, natural flake graphite does not fall off, and materials with different thermal conductivity and thermal expansion coefficient can be used as required.
上記各実施例において、垂直放熱板本体の大きさや厚み等は必要に応じて決めればよい。
また、薄銅板の大きさや形状等も必要に応じて決めればよく、通電メッキも必要に応じて決めればよい。In each of the above embodiments, the size, thickness, etc. of the main body of the vertical heat sink may be determined according to need.
Also, the size and shape of the thin copper plate may be determined as required, and the electroplating may also be determined as required.
1---放熱体
2---薄銅板
SH1-垂直放熱板本体
I---パワー半導体
S---絶縁材1---Heat radiator 2---Thin copper plate SH1-Main body of vertical heat sink I---Power semiconductor S---Insulator
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| JP2023126048A (en) * | 2022-02-28 | 2023-09-07 | 株式会社アカネ | Heat dispersion structure of heat sink |
| CN121168378A (en) * | 2025-08-04 | 2025-12-19 | 广东明阳龙源电力电子有限公司 | Short circuit reliability optimization method, device, system and medium for power module |
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| JP2005210035A (en) | 2004-01-26 | 2005-08-04 | Otsuka Denki Kk | Graphite composite material |
| JP2012142547A (en) | 2010-12-16 | 2012-07-26 | Nippon Soken Inc | Joining structure of thermal diffusion member, cooling structure of heating element, and method for joining thermal diffusion member |
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| JP2017034043A (en) | 2015-07-31 | 2017-02-09 | 昭和電工株式会社 | Composite of aluminum and carbon particle and insulating substrate |
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| WO2018235488A1 (en) | 2017-06-21 | 2018-12-27 | 富士フイルム株式会社 | Complex |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05326762A (en) * | 1992-05-20 | 1993-12-10 | Ibiden Co Ltd | Heat sink for semiconductor device |
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| JP2000022055A (en) | 1998-07-07 | 2000-01-21 | Furukawa Electric Co Ltd:The | Carbon fiber composite heat sink |
| JP2005210035A (en) | 2004-01-26 | 2005-08-04 | Otsuka Denki Kk | Graphite composite material |
| JP2016026391A (en) | 2009-07-14 | 2016-02-12 | スペシャルティ ミネラルズ (ミシガン) インコーポレーテツド | Anisotropic heat conducting element and method for producing the same |
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| JP2014220530A (en) | 2014-08-13 | 2014-11-20 | 株式会社村田製作所 | Multilayer ceramic capacitor |
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| WO2018235488A1 (en) | 2017-06-21 | 2018-12-27 | 富士フイルム株式会社 | Complex |
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