JP7302897B2 - Module manufacturing method - Google Patents

Description

The present disclosure relates to a method of manufacturing a module that includes acoustic wave devices.

Patent Document 1 discloses a method of packaging an electronic device such as an acoustic wave device by mounting a chip face down on a circuit board and covering the periphery of the chip with a sealing member.

JP 2017-157922 A

For example, in a Power Amplifier Module integrated duplexer (PAMiD) module, which has components such as a Surface Acoustic Wave (SAW) filter, power amplifier, and switch mounted on a substrate, it is possible to make the module smaller and thinner by mounting bare chips. suitable for transformation. However, it is necessary to put an underfill resin under other chips while keeping the SAW filter chip under a hollow state. Therefore, when mounting all the chips as bare chips, different resin sealing methods have to be adopted. That is, the resin for sealing the SAW filter chip and the resin for sealing the other chips must be formed separately, which is not suitable for cost reduction.

The present disclosure has been made to solve the above problems. An object of the present disclosure is to provide a module manufacturing method suitable for cost reduction.

A method for manufacturing a module according to the present disclosure includes:
a step of mounting an acoustic wave device and a semiconductor device on a package substrate;
a step of covering the acoustic wave device and the semiconductor device with a resin made of a single material;
a step of curing a first resin which is a portion of the resin covering the acoustic wave device while leaving a gap between the package substrate and the acoustic wave device;
After curing the first resin, a second resin, which is a portion of the resin covering the semiconductor device, is temporarily softened so that the space between the package substrate and the semiconductor device is filled with the second resin. filling at least a portion;
and thermosetting the second resin.

One aspect of the present disclosure is that the first resin is cured by UV exposure or electron beam irradiation.

It is an aspect of the present disclosure that the UV exposure or the electron beam irradiation does not reach the second resin due to a mask.

An aspect of the present disclosure is that the acoustic wave device has a functional element, and the functional element is exposed in the gap.

An aspect of the present disclosure includes a step of removing at least part of the first resin formed on the acoustic wave device.

An embodiment of the present disclosure includes a step of removing at least part of the second resin formed on the semiconductor device.

The semiconductor device comprises a power amplifier and a switch, and a step of removing at least part of the second resin formed on the power amplifier and not removing the second resin formed on the switch. This is regarded as one aspect of the present disclosure.

It is an aspect of the present disclosure that the temperature for thermosetting the second resin is higher than the temperature for softening the second resin.

Providing the step of forming a metal layer covering the resin is one aspect of the present disclosure.

Forming the metal layer by plating is one aspect of the present disclosure.

It is an aspect of the present disclosure that the metal layer is in contact with the conductor pattern of the package substrate by filling the openings of the resin.

It is an aspect of the present disclosure to include the step of forming an insulating layer on the metal layer, the upper surface of the insulating layer being substantially flat.

It is an aspect of the present disclosure to provide a step of providing an underfill resin in a space between the package substrate and the semiconductor device before covering the acoustic wave device and the semiconductor device with the resin.

It is an aspect of the present disclosure that the step of covering the acoustic wave device and the semiconductor device with the resin, the step of curing the first resin, and the step of softening the second resin are performed in a vacuum space. be.
An aspect of the present disclosure is that a through hole is formed in a portion of the package substrate directly below the semiconductor device.

According to the present disclosure, it is possible to provide a module manufacturing method suitable for cost reduction.

FIG. 4 is a cross-sectional view of the module; It is a flow chart which shows a manufacturing method of a module. FIG. 11 shows a device mounted on a substrate; FIG. 10 illustrates covering the device with resin; FIG. 10 illustrates curing a portion of the resin with UV exposure; FIG. 10 illustrates flowing resin between the device and the substrate; FIG. 7A is a photograph of resin heated after UV irradiation and FIG. 7B is a photograph of resin heated without UV irradiation. FIG. 4 is a diagram showing a through-hole of a package substrate; FIG. 10 illustrates removing part of the resin; FIG. 4 shows an insulating layer;

Embodiments will be described with reference to the accompanying drawings. In each figure, the same reference numerals are given to the same or corresponding parts. Redundant description of the relevant part will be simplified or omitted as appropriate.

Embodiment.
FIG. 1 is a cross-sectional view of a module 10 according to an embodiment. This module 10 has a package substrate 12 . According to one example, the package substrate 12 is a Printed Circuit board (PCB) substrate or a High Temperature Co-fired Ceramics (HTCC) substrate. According to another example, the package substrate 12 is a Low Temperature Co-fired Ceramics (LTCC) multilayer substrate composed of multiple dielectric layers. According to another example, any substrate provided with a base material and wiring electrodes penetrating the base material can be used as a package substrate. In the example of FIG. 1, the package substrate 12 includes a base material, an upper electrode, and a lower electrode electrically connected to the upper electrode by via wiring or the like. Passive elements such as capacitors or inductors may be formed inside the package substrate 12 .

Acoustic wave device 14, semiconductor device 20, passive element 30, and semiconductor device 40 are mounted on package substrate 12 by bumps 15, 21, 31, and 41, respectively. The bumps 15 electrically connect the package substrate 12 and the acoustic wave device 14 . The bumps 21 electrically connect the package substrate 12 and the semiconductor device 20 . The bumps 31 electrically connect the package substrate 12 and the passive elements 30 . The bumps 41 electrically connect the package substrate 12 and the semiconductor device 40 . The bumps 15, 21, 31, 41 are gold bumps, for example. According to another example, bumps 31 can be replaced with solder. According to one example, the height of these bumps is 10 μm to 50 μm.

According to one example, the acoustic wave device 14 includes any one of a surface acoustic wave filter, a filter consisting of thin film acoustic resonators, a duplexer, or a dual filter. According to another example, another configuration may be employed for the acoustic wave device. The acoustic wave device 14 is mounted on the package substrate 12 with the first main surface having the functional element facing the package substrate 12 . In the example of FIG. 1, the acoustic wave device includes an IDT (Interdigital Transducer) 14a and a pair of reflectors as functional elements on the first main surface. A wiring pattern may be formed on the first main surface from a suitable metal or alloy such as silver, aluminum, copper, titanium, palladium, or the like. The IDT 14a and the pair of reflectors are provided so as to excite surface acoustic waves. According to another example, the functional elements formed on the first main surface are a receive filter and a transmit filter. The receive filter is formed so that an electrical signal in a desired frequency band can pass. For example, the receive filter is a ladder-type filter consisting of a plurality of series resonators and a plurality of parallel resonators. The transmit filter is formed so that an electrical signal in a desired frequency band can pass. For example, the transmission filter is a ladder-type filter consisting of multiple series resonators and multiple parallel resonators.

Acoustic wave device 14 has a substrate formed of, for example, a piezoelectric single crystal such as lithium tantalate, lithium niobate, or quartz. According to another example, acoustic wave device 14 has a substrate formed of piezoelectric ceramics. According to another example, the acoustic wave device 14 has a substrate with a piezoelectric substrate and a support substrate bonded together. For example, the support substrate is a substrate made of sapphire, silicon, alumina, spinel, quartz or glass.

Acoustic wave device 14 is covered with resin 17 . However, the first main surface of acoustic wave device 14 is not covered with resin 17 . There is an air gap 16 between the acoustic wave device 14 and the package substrate 12 . The acoustic wave device 14 has a second main surface opposite to the first main surface. According to one example, at least part of the second main surface is not covered with resin 17 . A metal layer 18 is in contact with the second main surface. The metal layer 18 includes a first metal 18 a provided on the second main surface, a second metal 18 b in contact with the resin 17 , and a third metal 18 c in contact with the package substrate 12 .

According to one example, semiconductor device 20 includes any one of a power amplifier, a low noise amplifier, or a switch. In the example of FIG. 1, semiconductor device 20 is a power amplifier. A semiconductor device 20 is covered with resins 22 and 23 . A resin 22 is a resin filled between the package substrate 12 and the semiconductor device 20 . This resin 22 is provided as an underfill resin. The resin 23 is a resin that covers the side surface of the semiconductor device 20 and part of the upper surface. The semiconductor device 20 has a facing surface that faces the package substrate 12 and a non-facing surface that faces away from the facing surface. According to one example, at least part of the non-facing surface is not covered with resin. A metal layer 28 is in contact with this non-facing surface. The metal layer 28 includes a first metal 28 a provided on the non-facing surface, a second metal 18 b in contact with the resin 17 , and a third metal 18 c in contact with the package substrate 12 .

According to one example, passive element 30 is a capacitor. The passive element 30 is covered with resins 32,33. A resin 32 is a resin filled between the package substrate 12 and the passive element 30 . Accordingly, resin 32 is provided as an underfill resin. A resin 33 is a resin that covers the side and top surfaces of the passive element 30 . A metal layer 38 is formed on the resin 33 . The metal layer 38 has a first portion 38 a that contacts the package substrate 12 .

According to one example, semiconductor device 40 includes any one of a power amplifier, a low noise amplifier, or a switch. In the example of FIG. 1, semiconductor device 40 is a switch. A semiconductor device 40 is covered with resins 42 and 43 . A resin 42 is a resin filled between the package substrate 12 and the semiconductor device 40 . Resin 42 is provided as an underfill resin. A resin 43 is a resin that covers the side and top surfaces of the semiconductor device 20 . A metal layer 48 is formed on the resin 43 .

The resin 17 covers the acoustic wave device 14 while leaving a gap 16 between the package substrate 12 and the functional elements of the acoustic wave device 14 . The resins 22 and 23 cover the semiconductor device 20 while filling the space between the package substrate 12 and the semiconductor device 20 . Resins 32 and 33 cover the passive element 30 while filling the space between the package substrate 12 and the passive element 30 . The resins 42 and 43 cover the semiconductor device 40 while filling the space between the package substrate 12 and the semiconductor device 40 .

The resins 17, 22, 23, 32, 33, 42, and 43 can all be made of the same material. In other words, the resins 17, 22, 23, 32, 33, 42, and 43 have a common composition (molecular structure) before and after curing because they are provided by the same process. According to one example, the resins 17, 22, 23, 32, 33, 42, 43 are photocurable and thermally curable. According to one example, the thermosetting property of a resin is that it temporarily softens at a first temperature that is higher than room temperature and hardens by continuing the first temperature or setting it to a second temperature that is higher than the first temperature. It is something to do. Various materials are conceivable as the resin material, and examples thereof include the following.
・Epoxy resin-based Nippon Kayaku KPM500 dry film ・Epoxy resin-based Taiyo Ink PSR-800 AUS410, PSR-800 AUS SR1
・LPA-22 made by Toray based on polyimide resin

In the example of FIG. 1, the resin 17 covering the acoustic wave device 14 is photocured and thermoset, and the other resin is thermoset. For example, the resins 22, 42 filled between the package substrate 12 and the semiconductor devices 20, 40 are thermally cured.

As mentioned above, the resins 17, 22, 23, 32, 33, 42, 43 of the module 10 are the same material throughout. In other words, the resins 17, 22, 23, 32, 33, 42, and 43 are resins of a single material (one type of material). Therefore, the material cost can be reduced and the number of process steps can be reduced as compared with the case where a plurality of resins with different compositions are used. Therefore, the module 10 is suitable for cost reduction. Furthermore, since there is an air gap 16 between the package substrate 12 and the acoustic wave device 14, and resins 22, 32, and 42 are provided as underfill resin under other chips, the module 10 is provided as a PAMID module. can. Contacting the metal layer 18 with the second main surface of the acoustic wave device 14 contributes to improving heat dissipation. Contacting the metal layer 28 with the non-facing surface of the semiconductor device 20 also contributes to the improvement of heat dissipation. However, a resin is formed on the entire second main surface of the acoustic wave device 14 and a metal layer is formed on the resin, and a resin is formed on the entire non-facing surface of the semiconductor device 20 and a metal layer is formed on the resin. may be formed. The metal layers 18, 28, 38, 48 can also function as electromagnetic wave shield layers.

In the example of FIG. 1, the third metal 18c, the third metal 28c, and the first portion 38a are in contact with the package substrate 12. As shown in FIG. The third metal 18c, the third metal 28c, and the first portion 38a are in contact with the package substrate 12 by being formed in a resin opening directly above the package substrate 12. As shown in FIG. At least one of the third metal 18c, the third metal 28c, and the first portion 38a can be brought into contact with the conductor pattern of the package substrate 12. FIG. If the conductor pattern is set to the same potential as the ground potential of the acoustic wave device 14, the metal layers 18, 28, 38, and 48 can also be set to the ground potential. The grounded metal layers 18, 28, 38, 48 function as electromagnetic wave shield layers.

FIG. 2 is a flow chart showing a module manufacturing method. A method of manufacturing the module shown in FIG. 1 will be described with reference to this flow chart. Steps Sa and Sb are steps for mounting a plurality of chips on the package substrate 12 . In step Sa, cream solder is first applied to a predetermined position of the package substrate 12 in step S1. Then, a chip is mounted on the cream solder. Next, the chip is bonded to the package substrate 12 by performing solder reflow processing in step S2 and cleaning processing in step S3.

In step Sb, first, the package substrate 12 is subjected to plasma cleaning treatment in step S4. Then, in step S5, the bumps of the chip are adhered to the conductive adhesive provided on the package substrate 12 at predetermined positions. Step Sb is, according to one example, an Au—Au bonding (GGI bonding) process.

The step Sa uses solder to mount the chip on the package substrate, whereas the step Sb uses the conductive adhesive to mount the chip on the package substrate. According to one example, the acoustic wave device 14 is mounted on the package substrate 12 at step Sb, and the semiconductor device 20, the passive element 30 and the semiconductor device 40 are mounted on the package substrate 12 at step Sa. According to another example, acoustic wave device 14 is mounted on package substrate 12 in step Sa, and semiconductor device 20, passive element 30 and semiconductor device 40 are mounted on package substrate 12 in step Sb. According to yet another example, all chips to be mounted on package substrate 12 may be mounted in one of step Sa or step Sb and the other of step Sa or step Sb may be omitted. FIG. 3 illustrates the acoustic wave device 14, the semiconductor devices 20 and 40, and the passive element 30 mounted on the package substrate 12 in steps Sa and Sb. According to one example, the package substrate 12 of FIG. 3 is a substrate in which unit wiring substrates are arranged in a two-dimensional array. In this case, it can be said that a plurality of unit wiring boards are arranged on the package substrate 12 .

Then, the process proceeds to step Sc. Step Sc is a step of forming a resin. First, a resin sheet is placed over the plurality of device chips mounted in step S6. The resin sheet is, for example, a sheet of liquid epoxy resin. According to another example, the resin sheet can be a synthetic resin, such as polyimide, which is different than an epoxy resin. A protective film made of polyethylene terephthalate (PET) can be provided on the upper surface of the resin sheet, and a base film made of polyester can be provided on the lower surface of the resin sheet. By placing the resin sheet on the plurality of device chips, the resin sheet is temporarily fixed to the plurality of device chips.

Then, in step S7, resin is provided between the chips by vacuum lamination. For example, while applying pressure to the resin sheet in the direction of the package substrate 12 under vacuum, the resin is provided to the region between the chips. It is possible to apply pressure to the resin sheet in the direction of the package substrate 12 with silicone rubber inflated with compressed air, or to apply pressure in the direction of the package substrate 12 to the resin sheet with a rubber plate. FIG. 4 is a diagram showing an example of the shape of resin after vacuum lamination. In FIG. 4, the resin 50 has a portion 50a above the chips and a portion 50b provided between the chips.

Instead of vacuum lamination, other methods may be used to provide the resin between the chips. For example, a method called hot roller lamination may be employed. In the hot roller lamination method, the work is passed between an upper roller and a lower roller heated to at least the softening temperature of the resin sheet, so that the resin sheet is provided on the upper surfaces of the plurality of device chips, and the plurality of device chips. The side surfaces and the upper surface of the package substrate 12 are filled.

Thus, the acoustic wave device 14, the semiconductor devices 20 and 40, and the passive element 30 are covered with the resin 50 of a single material (one type of material). As described above, the resin 50 has photo-curing and thermosetting properties.

Next, in step S8, the portion of the resin that covers the acoustic wave device 14 is cured. FIG. 5 is a diagram showing curing of a portion of the resin. The resin 50 has a first resin 17 ′ covering the acoustic wave device 14 . In step S8, the first resin 17' is irradiated with UV. According to one example, in this UV irradiation, a mask 56 having openings only directly above the first resin 17' is used. By providing the resin 50 with UV light emitted from the UV irradiation device 58 through the mask 56, the first resin 17' of the resin 50 is irradiated with UV light, and the other portion (hereinafter referred to as the second resin) is irradiated with UV light. ) are not irradiated with UV. As a result, only the first resin 17' of the resin 50 is selectively exposed. By this selective exposure, the first resin 17 ′ is cured while leaving the gap 16 between the package substrate 12 and the acoustic wave device 14 .

The method of curing the first resin 17' is not limited to UV exposure. The first resin 17' can be cured by various well-known methods other than heat curing. For example, the first resin 17' may be cured by irradiating the first resin 17' with an electron beam. According to one example, the mask 56 described above can be used to irradiate the first resin 17' with an electron beam. According to another example, by scanning the electron beam emitted from the electron beam source while moving the stage holding the package substrate, the first resin 17' can be irradiated with the electron beam without a mask. According to another example, electron beam scanning and a mask may be used together.

By curing the first resin 17 ′ and maintaining the same shape as the resin 17 in FIG. According to one example, this void 16 is a closed space.

Then, the process proceeds to step S9. In step S9, an underfill for the semiconductor device or the like is provided, followed by heat curing of the second resin. Specifically, the second resin that was not cured in step S8 is temporarily softened to fill at least part of the space between the package substrate 12 and the semiconductor device with the second resin. The resin 50 is heated to soften and flow into the space between the semiconductor devices 20 and 40 and the passive element 30 and the package substrate 12, for example. FIG. 6 shows that softening the second resin 51 has formed resins 22, 32, and 42 that function as underfill.

After the underfill is thus provided, the second resin 51 is thermally cured. The method of thermosetting depends on the material of the resin. For example, with a certain resin, the second resin is cured by maintaining the first temperature, which is the temperature at which the second resin is softened, for a certain period of time. For another resin, a second temperature higher than the first temperature cures the second resin. Along with the heat treatment for softening and curing the second resin, the curing of the first resin 17' is also accelerated. That is, the first resin 17' is cured to such an extent that the shape is substantially fixed by the exposure process described above, and is completely cured by the subsequent heat treatment of the second resin. In other words, the heat treatment thermally cures the first resin 17'. Fluidization of the first resin 17' due to heat treatment is avoided or suppressed so that the resin does not cover the IDT 14a.

The process of softening and curing the resin proceeds by pressing the resin sheet toward the package substrate 12 with a pressing machine having heated upper and lower dies. For example, the resin sheet is once heated to a softening temperature to form an underfill, and then heated to a curing temperature to fix the shape.

The above-described process becomes possible by using a photocurable and thermosetting resin. FIG. 7 shows experimental results showing that the fluidity of the resin during heating can be controlled by the presence or absence of UV irradiation. In this experiment, a 5 mm square cover glass having a thickness of about 150 μm was provided on a slide glass substrate via a spacer having a thickness of about 20 μm. The cover glass has a larger area than the spacer. Then, the cover glass was covered with a dry film resin at a lamination temperature of about 60°C. Two samples having this configuration were prepared, one resin was UV-irradiated and the other resin was not UV-irradiated. These two samples were then heated at 180° C. for 1 minute. FIG. 7A is a photograph showing that the resin flow was suppressed in the UV-irradiated sample. The dark colored part is the resin. From FIG. 7A, it can be seen that although the resin slightly flowed in the vicinity of the square frame immediately below the substantially square cover glass, the flow of the resin was generally suppressed. On the other hand, FIG. 7B is a photograph showing that the resin flowed in the sample that was not UV irradiated. The dark colored part is the resin. From FIG. 7B, it can be seen that a large amount of resin flowed directly under the substantially square cover glass.

By the way, when the resin is thermally cured, if there is air in the space between the chip and the package substrate 12, filling the space with the underfill may be hindered. Therefore, an underfill resin may be provided in the space between the package substrate 12 and the semiconductor devices 20 and 40 before covering the chip including the acoustic wave device 14 and the semiconductor devices 20 and 40 with resin. For example, if a thermosetting underfill resin is provided between the package substrate 12 and the semiconductor device 20, between the package substrate 12 and the passive element 30, and between the package substrate 12 and the semiconductor device 40, Thereafter, the underfill resin and the second resin can be softened simultaneously. With these, the space between the package substrate 12 and the chip can be filled with resin.

According to another example, the step of covering the acoustic wave device 14 and the semiconductor device with resin, the step of curing the first resin 17', and the step of softening the second resin 51 are performed in a vacuum space. Then, the underfill can be provided without air in the space between the chip and the package substrate 12, so that the filling of the underfill can be ensured.

According to yet another example, a through hole in the package substrate 12 can be provided directly under the chip to be underfilled. For example, a through hole is formed in a portion of the package substrate 12 directly below the semiconductor device. FIG. 8 is a diagram showing through holes 12h formed in the package substrate 12. As shown in FIG. When the underfill is formed by flowing the resin, the air between the package substrate 12 and the chip escapes below the package substrate 12 through the through holes 12h, thereby ensuring the filling of the underfill.

The provision of underfill resin, the application of vacuum, and the formation of through-holes, described above, can be combined. For example, air between the package substrate 12 and the chip can be discharged from the through holes of the package substrate 12 when the underfill resin and the second resin are made to flow. Providing an underfill resin, applying a vacuum, and forming through-holes may be provided supplementally to complete the underfill. Therefore, these methods can be omitted.

Then, the process proceeds to step S10. In step S10, part of the resin is removed. FIG. 9 is a diagram showing an example of resin removal. In this example, the opening h2 is formed by removing at least part of the resin formed on the acoustic wave device 14, and the opening h2 is formed by removing at least part of the resin formed on the semiconductor device 20. form h4. Further, openings h1, h3 and h5 are formed to expose the package substrate 12. Next, as shown in FIG. In this example, at least part of the resin formed on the semiconductor device 20, which is a power amplifier, is removed, and the resin formed on the semiconductor device 40, which is a switch, is not removed. According to one example, resin removal is performed using laser light.

Then, the process proceeds to step Sd. Step Sd is a step of forming a metal layer. For example, in step S11, a tape is attached to the back surface of the package substrate 12, and in step S12, catalytic treatment is performed to cause an electroless plating reaction. Then, the tape is replaced in step S13, pretreatment is performed in step S14, and, for example, electroless Ni plating is formed in step S15. Thus, a metal layer covering the resin is formed by plating. Specifically, metal layers 18, 28, 38, and 48 of FIG. 1 are formed. According to one example, the metal layer contacts the conductor pattern of the package substrate 12 by filling the openings of the resin. The metal layers 18, 28, 38, 48 may be formed by methods other than electroless Ni plating. According to one example, electroless Cu plating and electroless Ni plating are applied in this order to form the metal layer. According to another example, a silver coating and an electroless Ni plating are applied in that order to form the metal layer. According to yet another example, Ti deposition, Cu sputtering, and electrolytic Ni plating are performed in this order to form the metal layer. These modifications can improve the adhesion between the resin and the metal layer as compared with the case where the metal layer is formed by electroless Ni plating.

Then, the process proceeds to step Se. Step Se is a so-called post-process. For example, the package substrate 12 is diced in step S16. This individualizes the product. Next, in step S17, the appearance is inspected, and in step S18, the electrical characteristics of the product are inspected. If there is no problem, the product is packed in step S19. Thus, the manufacturing of the module 10 shown in FIG. 1 is completed.

According to one example, an insulating layer can be formed on top of the structure of FIG. FIG. 10 is a diagram showing such an insulating layer 60. As shown in FIG. In this example, the step of forming an insulating layer 60 over the metal layers 18, 28, 38, 48 is added. According to one example, the top surface of the insulating layer 60 is substantially flat.

Having described several aspects of at least one embodiment, it is to be appreciated various alterations, modifications, and improvements will readily occur to those skilled in the art. Such alterations, modifications, and improvements are intended to be part of this disclosure, and are intended to be within the scope of this disclosure.

It is to be understood that the method and apparatus embodiments described herein are not limited in application to the details of construction and arrangement of components set forth in the foregoing description or illustrated in the accompanying drawings. The methods and apparatus can be implemented in other embodiments and practiced or carried out in various ways.

Specific implementations are provided here for illustrative purposes only and are not intended to be limiting.

The phraseology and terminology used in this disclosure is for the purpose of description and should not be regarded as limiting. The use of "including", "comprising", "having", "including" and variations thereof herein is intended to be inclusive of the items listed below and equivalents thereof as well as additional items.

References to “or (or)” shall be construed such that any term stated using “or (or)” refers to one, more than one, and all of the terms of the statement. can be

All references to front, rear, left, right, top, bottom, top, bottom, width, length, and front and back are intended for convenience of description. Such references are not limited to any one positional or spatial orientation of the components of this disclosure. Accordingly, the above description and drawings are exemplary only.

10 Module 12 Package Substrate 14 Acoustic Wave Device 16 Air Gap 17 Resin 18 Metal Layer 20 Semiconductor Device 22,23 Resin 28 Metal Layer 30 Passive Element 32,33 Resin 38 Metal Layer 40 Semiconductor device, 42,43 resin, 48 metal layer

Claims (15)

a step of mounting an acoustic wave device and a semiconductor device on a package substrate;
a step of covering the acoustic wave device and the semiconductor device with a resin made of a single material;
a step of curing a first resin which is a portion of the resin covering the acoustic wave device while leaving a gap between the package substrate and the acoustic wave device;
After curing the first resin, a second resin, which is a portion of the resin covering the semiconductor device, is temporarily softened so that the space between the package substrate and the semiconductor device is filled with the second resin. filling at least a portion;
and a step of thermally curing the second resin. 2. The module manufacturing method according to claim 1, wherein the first resin is cured by UV exposure or electron beam irradiation. 3. The module manufacturing method according to claim 2, wherein the UV exposure or the electron beam irradiation does not reach the second resin due to a mask. 4. The module manufacturing method according to any one of claims 1 to 3, wherein the acoustic wave device has a functional element, and the functional element is exposed in the gap. 5. The module manufacturing method according to any one of claims 1 to 4, further comprising a step of removing at least part of the first resin formed on the acoustic wave device. 6. The module manufacturing method according to claim 1, further comprising a step of removing at least part of said second resin formed on said semiconductor device. The semiconductor device comprises a power amplifier and a switch, and a step of removing at least part of the second resin formed on the power amplifier and not removing the second resin formed on the switch. 6. A method of manufacturing a module according to any one of claims 1 to 5. The module manufacturing method according to any one of claims 1 to 7, wherein a temperature for thermosetting the second resin is higher than a temperature for softening the second resin. 8. The method of manufacturing a module according to claim 1, further comprising the step of forming a metal layer covering said resin. 10. The module manufacturing method according to claim 9, wherein the metal layer is formed by plating. 11. The module manufacturing method according to claim 9, wherein the metal layer is in contact with the conductor pattern of the package substrate by filling the openings of the resin. 12. The module manufacturing method according to any one of claims 9 to 11, further comprising the step of forming an insulating layer on the metal layer, the upper surface of the insulating layer being substantially flat. 13. The method according to any one of claims 1 to 12, further comprising providing an underfill resin in a space between the package substrate and the semiconductor device before covering the acoustic wave device and the semiconductor device with the resin. module manufacturing method. The step of covering the acoustic wave device and the semiconductor device with the resin, the step of curing the first resin, and the step of softening the second resin are performed in a vacuum space. A method of manufacturing the module according to claim 1. 13. The module manufacturing method according to any one of claims 1 to 12, wherein a through hole is formed in a portion of the package substrate directly below the semiconductor device.

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