JP7305909B2 - semiconductor light emitting device - Google Patents

Description

The present disclosure relates to semiconductor light emitting devices.

A vertical cavity surface emitting laser (VCSEL) element is known as one of semiconductor light emitting elements. Patent Document 1 discloses an example of a semiconductor light emitting device in which a semiconductor laser chip such as a VCSEL element is packaged. A semiconductor light emitting device of the present disclosure includes a semiconductor laser chip, a die pad, electrode terminals, bonding wires, and an insulating material. A semiconductor laser chip is mounted on a die pad and connected to electrode terminals by bonding wires. The semiconductor laser chip, die pad, bonding wires, and electrode terminals are hermetically sealed with an insulating material made of transparent resin.

2. Description of the Related Art In recent years, as electronic devices to which semiconductor light emitting devices are applied have become thinner, there has been a demand for further reductions in the height of the semiconductor light emitting devices.

JP-A-9-102650

The present disclosure has been conceived under the circumstances described above, and an object thereof is to provide a semiconductor light-emitting device that can be further reduced in height.

A semiconductor light-emitting device provided by the present disclosure includes: a semiconductor light-emitting element having an element main surface having a light-emitting region; and an element back surface facing the side opposite to the element main surface in a thickness direction; a first lead electrically connected to the semiconductor light emitting element, and a back surface of the reinforcing member covering the semiconductor light emitting element and the first lead and facing the same side as the element back surface in the thickness direction. the first lead has a first lead back surface facing the same side as the element back surface in the thickness direction, the element main surface and the element back surface are exposed from the reinforcing member, The back surface of the first lead is flush with the back surface of the reinforcing member.

According to the present disclosure, the reinforcing member covers the semiconductor light emitting element and the first lead while exposing the main surface of the element, the back surface of the element, and the back surface of the first lead. Since the semiconductor light emitting element can be fixed to the first lead while the light emitting region is exposed from the reinforcing member, there is no need to mount the semiconductor light emitting element on the lead or the substrate. Therefore, the semiconductor light emitting device of the present disclosure can be made thinner than conventional semiconductor light emitting devices in which semiconductor light emitting elements are mounted on leads or substrates.

Other features and advantages of the present disclosure will become more apparent from the detailed description below with reference to the accompanying drawings.

1 is a plan view showing a semiconductor light emitting device according to a first embodiment of the present disclosure; FIG. 2 is a bottom view showing the semiconductor light emitting device of FIG. 1; FIG. FIG. 2 is a front view showing the semiconductor light emitting device of FIG. 1; FIG. 2 is a right side view showing the semiconductor light emitting device of FIG. 1; 2 is a cross-sectional view taken along line VV of FIG. 1; FIG. 2 is a cross-sectional view taken along line VI-VI of FIG. 1; FIG. 2 is an enlarged cross-sectional view of a main part showing a semiconductor light emitting element of the semiconductor light emitting device of FIG. 1; FIG. 2 is an enlarged cross-sectional view of a main part showing an example of a method of manufacturing the semiconductor light emitting device of FIG. 1; FIG. 2 is an enlarged cross-sectional view of a main part showing an example of a method of manufacturing the semiconductor light emitting device of FIG. 1; FIG. 2 is an enlarged plan view of a main part showing an example of a method for manufacturing the semiconductor light emitting device of FIG. 1; FIG. 2 is an enlarged cross-sectional view of a main part showing an example of a method of manufacturing the semiconductor light emitting device of FIG. 1; FIG. 2 is an enlarged cross-sectional view of a main part showing an example of a method of manufacturing the semiconductor light emitting device of FIG. 1; FIG. 2 is an enlarged cross-sectional view of a main part showing an example of a method of manufacturing the semiconductor light emitting device of FIG. 1; FIG. 2 is an enlarged plan view of a main part showing an example of a method for manufacturing the semiconductor light emitting device of FIG. 1; FIG. 2 is an enlarged cross-sectional view of a main part showing an example of a method of manufacturing the semiconductor light emitting device of FIG. 1; FIG. 2 is an enlarged cross-sectional view of a main part showing an example of a method of manufacturing the semiconductor light emitting device of FIG. 1; FIG. 2 is an enlarged plan view of a main part showing an example of a method for manufacturing the semiconductor light emitting device of FIG. 1; FIG. 2 is an enlarged cross-sectional view of a main part showing an example of a method of manufacturing the semiconductor light emitting device of FIG. 1; FIG. 2 is an enlarged cross-sectional view of a main part showing an example of a method of manufacturing the semiconductor light emitting device of FIG. 1; FIG. FIG. 4 is a cross-sectional view showing a semiconductor light emitting device according to a second embodiment of the present disclosure; FIG. 11 is a plan view showing a semiconductor light emitting device according to a third embodiment of the present disclosure; FIG. 11 is a plan view showing a semiconductor light emitting device according to a fourth embodiment of the present disclosure; FIG. 11 is a plan view showing a semiconductor light emitting device according to a fifth embodiment of the present disclosure; 24 is a cross-sectional view showing the semiconductor light emitting device of FIG. 23; FIG. FIG. 11 is a bottom view showing a semiconductor light emitting device according to a sixth embodiment of the present disclosure; 26 is a cross-sectional view showing the semiconductor light emitting device of FIG. 25; FIG. FIG. 21 is a plan view showing a semiconductor light emitting device according to a seventh embodiment of the present disclosure; 28 is a cross-sectional view showing the semiconductor light emitting device of FIG. 27; FIG. FIG. 20 is a cross-sectional view showing a semiconductor light emitting device according to an eighth embodiment of the present disclosure; FIG. 20 is a cross-sectional view showing a semiconductor light emitting device according to a ninth embodiment of the present disclosure; 31 is an enlarged cross-sectional view of a main part showing a semiconductor light emitting element of the semiconductor light emitting device of FIG. 30; FIG. FIG. 21 is a plan view showing a semiconductor light emitting device according to a tenth embodiment of the present disclosure; 33 is a cross-sectional view showing the semiconductor light emitting device of FIG. 32; FIG.

Preferred embodiments of the present disclosure will be specifically described below with reference to the drawings.

<First embodiment>
A semiconductor light emitting device A10 according to the first embodiment of the present disclosure will be described based on FIGS. 1 to 7. FIG. The semiconductor light emitting device A10 includes a semiconductor light emitting element 1, a first lead 2, a second lead 3, an outer wall member 4, a reinforcing member 5, a translucent resin 6, first bonding wires 71, and second bonding wires 72. .

FIG. 1 is a plan view showing the semiconductor light emitting device A10. FIG. 2 is a bottom view showing the semiconductor light emitting device A10. FIG. 3 is a front view showing the semiconductor light emitting device A10. FIG. 4 is a right side view showing the semiconductor light emitting device A10. FIG. 5 is a cross-sectional view along line VV in FIG. FIG. 6 is a cross-sectional view along line VI-VI of FIG. FIG. 7 is an enlarged cross-sectional view showing the semiconductor light emitting element 1 of the semiconductor light emitting device A10. In addition, in FIG. 1, the light is transmitted through the translucent resin 6 for convenience of understanding.

The semiconductor light-emitting device A10 shown in these figures is a device that is surface-mounted on wiring boards of various electronic devices such as smartphones. The shape of the semiconductor light emitting device A10 when viewed in the thickness direction is a rectangular shape. For convenience of explanation, the thickness direction of the semiconductor light emitting device A10 is defined as the z direction, the short direction of the semiconductor light emitting device A10 (horizontal direction in FIG. 1) orthogonal to the z direction is defined as the x direction, the z direction and the direction orthogonal to the x direction. (vertical direction in FIG. 1) is defined as the y direction. Although the size of the semiconductor light emitting device A10 is not particularly limited, in the present embodiment, the z-direction dimension is, for example, 0.1 mm or more and 0.2 mm or less.

The semiconductor light emitting element 1 is a light source in the semiconductor light emitting device A10 and emits light in a predetermined wavelength band. In this embodiment, the semiconductor light emitting device 1 is a VCSEL device. Note that the semiconductor light emitting device 1 is not limited to a VCSEL device, and may be an LED device or the like. The semiconductor light emitting element 1 is arranged in the center of the semiconductor light emitting device A10 so that its long sides are parallel to the y direction and its short sides are parallel to the x direction when viewed in the z direction. Light from the semiconductor light emitting device A10 is emitted generally to one side in the z direction. As shown in FIGS. 1 and 2, in this embodiment, the semiconductor light emitting device 1 has a rectangular shape when viewed in the z direction.

A semiconductor light emitting device 1 includes a device body 10 , a first electrode 11 , a second electrode 12 , and a plurality of light emitting regions 14 . The semiconductor light emitting device 1 emits light when a voltage is applied between the first electrode 11 and the second electrode 12 to energize the device, resonates the light internally, and emits laser light from the light emitting region 14 do.

The element main body 10 has an element main surface 1a, an element back surface 1b, and an element side surface 1c. The element main surface 1a and the element back surface 1b face opposite sides in the z-direction. The element main surface 1a is a surface facing upward in FIGS. The element back surface 1b is a surface facing downward in FIGS. The element side surface 1c is a surface that is connected to the element main surface 1a and the element back surface 1b and faces the x direction or the y direction. A first electrode 11 and a second electrode 12 are arranged on the element main surface 1a, and a plurality of light emitting regions 14 are formed. As shown in FIG. 1, the plurality of light emitting regions 14 are discretely arranged over the entire main surface 1a of the element except for the regions where the first electrodes 11 and the second electrodes 12 are arranged.

7, the element body 10 includes a semiconductor substrate 101, a first semiconductor layer 102, an active layer 103, a second semiconductor layer 104, an insulating layer 105, a current confinement layer 106, and a conductive layer 107. , a light emitting region 14 is formed on the element main surface 1a. The configuration examples shown in these figures are examples of the VCSEL device as the semiconductor light emitting device 1, and are not limited to this configuration. FIG. 7 shows an enlarged portion including one light emitting region 14 .

The semiconductor substrate 101 is made of a semiconductor. The semiconductor forming semiconductor substrate 101 is, for example, undoped GaAs. The semiconductor forming the semiconductor substrate 101 may be other than GaAs.

The active layer 103 is made of a compound semiconductor that emits light with a wavelength of, for example, the 980 nm band (hereinafter referred to as "λa") by spontaneous emission and stimulated emission. The active layer 103 is located between the first semiconductor layer 102 and the second semiconductor layer 104 . In this embodiment, a multiple quantum well structure in which undoped GaAs well layers and undoped AlGaAs barrier layers (barrier layers) are alternately laminated. For example, undoped Al _0.35 Ga _0.65 As barrier layers and undoped GaAs well layers are alternately formed for 2 to 6 cycles.

The first semiconductor layer 102 is typically a distributed Bragg reflector (DBR) layer and formed on the semiconductor substrate 101 . The first semiconductor layer 102 is made of a semiconductor having a first conductivity type. In this example, the first conductivity type is n-type. The first semiconductor layer 102 is configured as a DBR for efficiently reflecting light emitted from the active layer 103 . The first semiconductor layer 102 is formed by stacking a plurality of pairs of two AlGaAs layers each having a thickness of λa/4 and having different reflectances. More specifically, the first semiconductor layer 102 has an n-type Al _0.16 Ga _0.84 As layer (low Al composition layer) with a relatively low Al composition having a thickness of, for example, 600 Å and a thickness of, for example, 700 Å. An n-type Al _0.92 Ga _0.16 As layer (high Al composition layer) having a relatively high Al composition is alternately stacked repeatedly for a plurality of cycles (for example, 20 cycles). The n-type Al _0.16 Ga _0.84 As layer and the n-type Al _0.92 Ga _0.16 As layer have, for example, 2×10 ¹⁷ cm ⁻³ to 3×10 ¹⁸ cm ⁻³ and 2×10 ¹⁷ cm ⁻³ to 3×10 cm −3 , respectively. It is doped with n-type impurities (eg, Si) at a concentration of ¹⁸ cm ⁻³ .

The second semiconductor layer 104 is typically a DBR layer and made of a semiconductor having the second conductivity type. In this example, the second conductivity type is p-type. Unlike the present embodiment, the first conductivity type may be p-type and the second conductivity type may be n-type. A first semiconductor layer 102 is located between the second semiconductor layer 104 and the semiconductor substrate 101 . The second semiconductor layer 104 is configured as a DBR for efficiently reflecting light emitted from the active layer 103 . More specifically, the second semiconductor layer 104 is formed by stacking a plurality of pairs of two AlGaAs layers each having a thickness of λa/4 and having different reflectances. The second semiconductor layer 104 includes, for example, a p-type Al _0.16 Ga _0.84 As layer with a relatively low Al composition (low Al composition layer) and a p-type Al _0.92 Ga _0.16 As layer with a relatively high Al composition (high Al composition layer). composition layer) are laminated alternately for a plurality of cycles (for example, 20 cycles).

The current confinement layer 106 is located within the second semiconductor layer 104 . The current confinement layer 106 is made of a layer that contains a large amount of Al and is easily oxidized, for example. The current confinement layer 106 is formed by oxidizing this easily oxidizable layer. Current confinement layer 106 does not necessarily have to be formed by oxidation, and may be formed by other methods (eg, ion implantation). An opening 106 a is formed in the current constriction layer 106 . A current flows through the opening 106a.

The insulating layer 105 is formed on the second semiconductor layer 104 . Insulating layer 105 is made of, for example, SiO ₂ . An opening 105 a is formed in the insulating layer 105 .

Conductive layer 107 is formed on insulating layer 105 . Conductive layer 107 is made of a conductive material (eg, metal). The conductive layer 107 is electrically connected to the second semiconductor layer 104 through the opening 105 a of the insulating layer 105 . The conductive layer 107 has an opening 107a.

Emissive region 14 is the region where light from active layer 103 is emitted directly or after reflection. In this example, the light emitting region 14 has an annular shape in plan view, but the shape is not particularly limited. The second semiconductor layer 104, the current confinement layer 106, the insulating layer 105, and the conductive layer 107 are laminated in the light emitting region 14, and the opening 106a of the current constriction layer 106, the opening 105a of the insulating layer 105, and the opening 107a of the conductive layer 107 are formed. etc. are formed. In light emitting region 14 , light from active layer 103 is emitted through opening 107 a of conductive layer 107 .

The first electrode 11 is made of metal, for example, is in contact with the conductive layer 107 , and is electrically connected to the second semiconductor layer 104 . The first electrode 11 becomes an anode electrode. The second electrode 12 is made of metal, for example, is formed on the surface of the semiconductor substrate 101 (the surface on which the first semiconductor layer 102 is formed), and is electrically connected to the first semiconductor layer 102 . The second electrode 12 becomes a cathode electrode.

An insulating layer 75 is formed on the element back surface 1b side of the semiconductor light emitting element 1 so as to be in contact with the element back surface 1b. The insulating layer 75 is formed by drying and curing an insulating paste made of an insulating resin, for example. The insulating layer 75 is formed in contact with the entire surface of the element back surface 1b and part of the element side surface 1c. As shown in FIGS. 1 and 2, the periphery of the insulating layer 75 is located outside the periphery of the semiconductor light emitting device 1 when viewed in the z direction. As shown in FIGS. 2, 5, and 6, the insulating layer 75 has a back surface 75b facing the same side as the back surface 1b of the semiconductor light emitting element 1 in the z direction. The back surface 75b is exposed from the reinforcing member 5 and is flush with a back surface 52 (described later) of the reinforcing member 5. As shown in FIG.

The first lead 2 and the second lead 3 are made of metal, preferably Cu or Ni, or an alloy thereof, 42 alloy, or the like. In this embodiment, an example in which the first lead 2 and the second lead 3 are made of Cu will be described. The thickness of the first lead 2 and the second lead 3 is, for example, 0.05 mm or more and 0.15 mm or less, and is 0.1 mm in this embodiment. The first lead 2 and the second lead 3 are formed, for example, by etching a metal plate. The first lead 2 and the second lead 3 may be formed by punching or bending a metal plate.

As shown in FIG. 1, the first lead 2 is arranged on one side of the semiconductor light emitting element 1 in the y direction (the upper side in FIG. 1) and is spaced apart from the semiconductor light emitting element 1. extends to the department. The first lead 2 has a substantially long rectangular shape when viewed in the z direction. When viewed in the z-direction, each side of the first lead 2 is parallel to the x-direction or the y-direction. The first lead 2 is electrically connected to the first electrode 11 (anode electrode) of the semiconductor light emitting element 1 by a plurality of first bonding wires 71 . Thereby, the first lead 2 functions as an anode terminal when the semiconductor light emitting device A10 is mounted on an external wiring board. The first lead 2 has a main surface 21 , a back surface 22 , side surfaces 23 , recesses 24 and a plurality of protrusions 25 .

The main surface 21 and the back surface 22 face opposite sides in the z-direction. Principal surface 21 is the surface facing upward in FIGS. Main surface 21 is a surface to which first bonding wire 71 is connected. An Ag plating layer (not shown) is formed on the main surface 21 . The back surface 22 is the surface facing downward in FIGS. The rear surface 22 is exposed from the outer wall member 4 and the reinforcing member 5 and becomes a rear surface terminal. An alloy plating layer containing Sn as a main component (not shown) is formed on the rear surface 22 . In this embodiment, major surface 21 is larger than back surface 22 . As a result, the first lead 2 can be prevented from falling off from the rear surface 22 side. In addition, the main surface 21 and the back surface 22 may have the same size.

The side surface 23 is a surface connected to the main surface 21 and perpendicular to the main surface 21 and the back surface 22 . The side surface 23 has a pair of regions facing the x direction and a pair of regions facing the y direction. The recessed portion 24 is a portion recessed in the z-direction from the rear surface 22, and is formed by, for example, half-etching. The concave portion 24 is formed to surround the back surface 22 along the side surface 23 when viewed in the z direction. The protruding portion 25 is a portion that protrudes outward from the side surface 23, and is formed by cutting the support member that has connected the other first lead 2, the second lead 3, or the frame in the lead frame at the time of manufacture. This is the remaining part. In this embodiment, one protruding portion 25 is arranged in the center in the x direction of the region of the side surface 23 facing one side in the y direction (upward in FIG. 1). In addition, one projecting portion 25 is arranged in the center in the y direction in each region of the side surface 23 facing in the x direction. That is, the first lead 2 has three projecting portions 25 . Note that the number and arrangement of the protruding portions 25 are not limited. As shown in FIGS. 4 and 5 , an outward facing end surface 25 a of each protrusion 25 is exposed from the outer wall member 4 .

As shown in FIG. 1, the second lead 3 is arranged on the other side of the semiconductor light emitting element 1 in the y direction (lower side in FIG. 1) and is spaced apart from the semiconductor light emitting element 1. extending to both ends. That is, the first lead 2 and the second lead 3 are arranged so as to sandwich the semiconductor light emitting element 1 from both sides in the y direction. The second lead 3 has a substantially long rectangular shape when viewed in the z direction. When viewed in the z-direction, each side of the second lead 3 is parallel to the x-direction or the y-direction. The second lead 3 is electrically connected to the second electrode 12 (cathode electrode) of the semiconductor light emitting device 1 by a plurality of second bonding wires 72 . Thereby, the second lead 3 functions as a cathode terminal when the semiconductor light emitting device A10 is mounted on an external wiring board. The second lead 3 has a main surface 31 , a back surface 32 , side surfaces 33 , recesses 34 and a plurality of protrusions 35 .

The main surface 31 and the back surface 32 face opposite sides in the z-direction. Principal surface 31 is the surface facing upward in FIGS. The main surface 31 is the surface to which the second bonding wire 72 is connected. An Ag plating layer (not shown) is formed on the main surface 31 . The back surface 32 is the surface facing downward in FIGS. 3-6. The rear surface 32 is exposed from the outer wall member 4 and the reinforcing member 5 and becomes a rear surface terminal. An alloy plating layer containing Sn as a main component (not shown) is formed on the rear surface 32 . In this embodiment, major surface 31 is larger than back surface 32 . Thereby, the second lead 3 can be prevented from falling off from the rear surface 32 side. In addition, the main surface 31 and the back surface 32 may have the same size.

The side surface 33 is a surface connected to the main surface 31 and perpendicular to the main surface 31 and the back surface 32 . The side surface 33 has a pair of regions facing the x direction and a pair of regions facing the y direction. The recessed portion 34 is a portion recessed in the z-direction from the rear surface 32 and is formed by, for example, half-etching. The concave portion 34 is formed along the side surface 33 so as to surround the back surface 32 as viewed in the z direction. The protruding portion 35 is a portion that protrudes outward from the side surface 33, and is formed by cutting the support member that connects the other second lead 3, the first lead 2, or the frame in the lead frame at the time of manufacture. This is the remaining part. In this embodiment, one protruding portion 35 is arranged in the center in the x direction of the region facing one side (downward in FIG. 1) in the y direction of the side surface 33 . In addition, one protruding portion 35 is arranged in the center in the y direction in each region of the side surface 33 facing in the x direction. That is, the second lead 3 has three projecting portions 35 . Note that the number and arrangement of the protruding portions 35 are not limited. As shown in FIGS. 3 to 5, the outward facing end face 35a of each protrusion 35 is exposed from the outer wall member 4. As shown in FIGS.

The first bonding wire 71 and the second bonding wire 72 are made of metal, preferably Au, Cu, Ag, or the like. In this embodiment, the first bonding wire 71 and the second bonding wire 72 are made of Au, for example. A first bonding wire 71 is connected to the first electrode 11 of the semiconductor light emitting element 1 and the main surface 21 of the first lead 2 . A second bonding wire 72 is connected to the second electrode 12 of the semiconductor light emitting element 1 and the main surface 31 of the second lead 3 . The first bonding wires 71 and the second bonding wires 72 are entirely exposed from the reinforcing member 5 and covered with the translucent resin 6 . The number of first bonding wires 71 and second bonding wires 72 is not limited.

The outer wall member 4 surrounds the semiconductor light emitting element 1 when viewed in the z direction. The outer wall member 4 is made of an insulating material such as epoxy resin, silicone resin, or the like. In this embodiment, a thermosetting resin containing black epoxy resin as a main component is used. The first lead 2 and the second lead 3 are supported by the outer wall member 4 . The outer wall member 4 has an elongated rectangular ring shape when viewed in the z direction, and includes a top surface 41 , a bottom surface 42 , an outer peripheral surface 43 and an inner peripheral surface 44 .

The top surface 41 and the bottom surface 42 face opposite sides in the z-direction. The top surface 41 is the upward facing surface in FIGS. 3-6, and the bottom surface 42 is the downward facing surface in FIGS. The top surface 41 and the bottom surface 42 have a ring shape with a rectangular length when viewed in the z direction.

The outer peripheral surface 43 is a surface that connects the top surface 41 and the bottom surface 42 and faces outward. The outer peripheral surface 43 has a pair of regions facing opposite sides in the x direction and a pair of regions facing opposite sides in the y direction. Each region of the outer peripheral surface 43 is orthogonal to the top surface 41 and the bottom surface 42 and parallel to the z-direction.

The inner peripheral surface 44 is a surface that connects the top surface 41 and the bottom surface 42 and faces inward. The inner peripheral surface 44 has a pair of regions facing each other in the x direction and a pair of regions facing each other in the y direction. Each region of the inner peripheral surface 44 is inclined with respect to the z direction. A cross-sectional area perpendicular to the z-direction of the space surrounded by the inner peripheral surface 44 increases toward the top surface 41 .

In this embodiment, each of the main surface 21 , the side surface 23 , the concave portion 24 , the projecting portion 25 and the entire rear surface 22 of the first lead 2 are exposed from the outer wall member 4 . The back surface 22 and the bottom surface 42 are flush with each other. Each end surface 25a of the projecting portion 25 and the outer peripheral surface 43 are flush with each other. Part of each of the main surface 31 , the side surface 33 , the concave portion 34 and the projecting portion 35 of the second lead 3 , and the entire side surface 33 are exposed from the outer wall member 4 . The back surface 32 and the bottom surface 42 are flush with each other. Each end surface 35a of the projecting portion 35 and the outer peripheral surface 43 are flush with each other.

The outer wall member 4 also includes a pair of first side portions 46 , a pair of second side portions 47 and an opening 45 . As shown in FIG. 5, the pair of first side portions 46 extend in the x-direction and are spaced apart from each other in the y-direction. Also, as shown in FIG. 6, the pair of second side portions 47 extend in the y direction and are separated from each other in the x direction. The pair of first side portions 46 and the pair of second side portions 47 surround the semiconductor light emitting element 1 and support the first lead 2 and the second lead 3 when viewed in the z direction. The opening 45 is a hollow area surrounded by a pair of first side portions 46 and a pair of second side portions 47 and penetrates in the z direction. Also, the opening 45 is surrounded by four regions of the inner peripheral surface 44 . The opening 45 has an elongated rectangular outer edge when viewed in the z direction. The cross-sectional area of the opening 45 orthogonal to the z-direction is maximum at a position flush with the top surface 41 and decreases toward the bottom surface 42 side.

The reinforcing member 5 surrounds the semiconductor light emitting element 1 when viewed in the z direction. The reinforcing member 5 is made of an insulating material such as an epoxy resin, a silicone resin, or the like, as appropriate. The material of the reinforcing member 5 may be the same material as that of the outer wall member 4, or may be a different material. In this embodiment, the reinforcing member 5 is made of a thermosetting resin whose main component is a black epoxy resin, which is stronger than the outer wall member 4 . The reinforcing member 5 is interposed between the semiconductor light emitting element 1 and the first lead 2, the second lead 3, the outer wall member 4, and supports the semiconductor light emitting element 1 with the first lead 2, the second lead 3, and the outer wall member 4. It is fixed to the outer wall member 4 . Further, the reinforcing member 5 is formed on the bottom surface 42 side of the opening 45 of the outer wall member 4, thereby ensuring the strength of the semiconductor light emitting device A10. As shown in FIGS. 5 and 6, the reinforcing member 5 is in contact with the device side surface 1c of the semiconductor light emitting device 1. As shown in FIGS. On the other hand, the element main surface 1 a and the element back surface 1 b of the semiconductor light emitting element 1 are exposed from the reinforcing member 5 . Principal surface 21 and rear surface 22 of first lead 2 and principal surface 31 and rear surface 32 of second lead 3 are exposed from reinforcing member 5 . The reinforcing member 5 has a main surface 51 and a back surface 52 . The main surface 51 and the back surface 52 face opposite sides in the z-direction. The main surface 51 is the surface facing upward in FIGS. 3 to 6, and the back surface 52 is the surface facing downward in FIGS. In this embodiment, the back surface 52 of the reinforcing member 5 is flush with the back surface 75 b of the insulating layer 75 , the back surface 22 of the first lead 2 , the back surface 32 of the second lead 3 , and the bottom surface 42 of the outer wall member 4 .

The translucent resin 6 is formed in the opening 45 of the outer wall member 4, and covers the element main surface 1a of the semiconductor light emitting element 1, the first bonding wire 71, the second bonding wire 72, the first lead 2, the second lead 3, and the element main surface 1a. It covers the main surface 51 of the reinforcing member 5 . The translucent resin 6 has translucency and electrical insulation. The translucent resin 6 transmits light with a wavelength of 800 nm or more. The modulus of elasticity of the translucent resin 6 is lower than that of the outer wall member 4 and the reinforcing member 5 . In this embodiment, the constituent material of the translucent resin 6 is silicone resin, for example. Other materials such as epoxy resin having a low elastic modulus may also be used. The translucent resin 6 is formed by injecting a constituent material in a liquid state into the opening 45 of the outer wall member 4 after the reinforcing member 5 is formed, and then curing the material. Laser light emitted from the element main surface 1a of the semiconductor light emitting element 1 passes through the translucent resin 6 and is emitted to the outside.

Next, an example of a method for manufacturing the semiconductor light emitting device A10 will be described below with reference to FIGS. 8 to 19. FIG. 8, 9, 11 to 13, 15, 16, 18, and 19 are enlarged cross-sectional views of essential parts showing the steps relating to the method of manufacturing the semiconductor light emitting device A10, corresponding to FIG. It is a sectional view. 10, 14, and 17 are enlarged plan views of essential parts showing steps related to the method of manufacturing the semiconductor light emitting device A10.

First, as shown in FIG. 8, a metal plate 91 is prepared which has a main surface 911 and a back surface 912 facing opposite to each other in the z direction. The metal plate 91 forms the first lead 2 and the second lead 3 of the semiconductor light emitting device A10. Metal plate 91 is a thin plate made of Cu, for example. The thickness of metal plate 91 is, for example, 0.1 mm. Both the main surface 911 and the back surface 912 are uniform flat surfaces. An Ag plating layer (not shown) is formed on the main surface 911 .

Then, as shown in FIGS. 9 and 10, a portion of the metal plate 91 is removed by wet etching. Specifically, first, after forming a mask on the back surface 912 by photolithography, part of the metal plate 91 is removed from the back surface 912 by half etching. The etchant is, for example, a mixed solution of sulfuric acid (H ₂ SO ₄ ) and hydrogen peroxide (H ₂ O ₂ ). Next, after forming a mask on the main surface 911 by photolithography, etching is performed from the main surface 911 to partially penetrate the metal plate 91 in the z direction. Through this step, the metal plate 91 is formed with a concave portion 913 recessed from the back surface 912 toward the main surface 911 and a through portion 914 penetrating from the back surface 912 to the main surface 911 .

Next, as shown in FIG. 11, the base material 92 is attached to the back surface 912 of the metal plate 91 . The base material 92 is an electrically insulating member, such as a polyimide tape.

Next, the outer wall member 93 is formed. First, as shown in FIG. 12, the mold 94 is arranged on the main surface 921 of the substrate 92, which is the surface on which the metal plate 91 is attached. Then, the liquid constituent material of the outer wall member 93 is filled in the space 941 formed between the mold 94 and the main surface 921 of the base material 92 and is thermally cured. Of the space formed between the mold 94 and the main surface 921 of the base material 92, a space 942 surrounded by the mold 94, the base material 92, and the metal plate 91 and not connected to the space 941 is not filled with constituent material. After thermal curing, the mold 94 is released to form the outer wall member 93 as shown in FIGS. 13 and 14 . Further, the outer wall member 93 is formed with an opening 931 that penetrates in the z-direction and exposes the base material 92 and the metal plate 91 .

Next, as shown in FIG. 15, after the semiconductor light emitting element 1 is mounted on the main surface 921 of the base material 92 exposed from the opening 931 of the outer wall member 93, the semiconductor light emitting element 1 and the main surface 911 of the metal plate 91 are bonded together. A plurality of conductive first bonding wires 71 and second bonding wires 72 are formed. When mounting the semiconductor light emitting device 1 , first, a bonding material is applied to the main surface 921 of the base material 92 . The bonding material is, for example, an insulating paste. Next, the semiconductor light emitting device 1 adsorbed by a collet or the like is transferred onto the base material 92 and adhered to the bonding material. Finally, the bonding material is thermally cured in a curing furnace or the like. The thermoset bonding material becomes the insulating layer 75 of the semiconductor light emitting device A10.

Next, as shown in FIGS. 16 and 17, reinforcing members 5 are formed. For the reinforcing member 5, the liquid constituent material of the reinforcing member 5 is injected from the opening 931 of the outer wall member 93 into the space between the through portion 914 of the metal plate 91 and the element side surface 1c of the semiconductor light emitting element 1, and then Formed by thermosetting. A constituent material in a liquid state is injected so as to expose the element main surface 1a of the semiconductor light emitting element 1 .

Next, as shown in FIG. 18, translucent resin 6 is formed. The light-transmitting resin 6 is a constituent material of the light-transmitting resin 6 in a liquid state so as to cover the semiconductor light emitting element 1 , the first bonding wires 71 , the second bonding wires 72 and the metal plate 91 from the opening 931 of the outer wall member 93 . is injected and then cured.

Next, as shown in FIG. 19, the base material 92 is peeled off from the metal plate 91 . The back surface 912 of the metal plate 91, the back surface 75b of the insulating layer 75, the back surface 52 of the reinforcing member 5, and the back surface 932 of the outer wall member 93 are flush with each other. Next, an alloy plating layer (not shown) is formed on the rear surface 912 of the metal plate 91 . Next, the metal plate 91 and the outer wall member 93 are cut along the x-direction and the y-direction. For cutting, for example, a dicing saw is used to cut from the direction in which the back surface 912 of the metal plate 91 faces. For example, when cutting along the x direction, cut along the cutting line CL shown in FIG. The individual pieces divided in this process become the semiconductor light emitting devices A10. At this time, the end surface 25 a and the end surface 35 a are formed on the metal plate 91 , and the metal plate 91 becomes the first lead 2 and the second lead 3 . Further, the outer wall member 93 is formed with the outer peripheral surface 43 , and the outer wall member 93 becomes the outer wall member 4 . Through the above steps, the semiconductor light emitting device A10 described above is obtained.

Next, the operation of the semiconductor light emitting device A10 will be described.

According to this embodiment, the semiconductor light emitting device 1 is not mounted on leads or substrates. Therefore, the semiconductor light emitting device A10 can be made thinner in thickness (dimension in the z direction) than a conventional semiconductor light emitting device in which the semiconductor light emitting element 1 is mounted on a lead or a substrate. It is possible. Further, the reinforcing member 5 is made of a high-strength constituent material, and supports the semiconductor light-emitting element 1, the first lead 2, and the second lead 3 with the element main surface 1a of the semiconductor light-emitting element 1 exposed. covering. Since the semiconductor light emitting element 1 is fixed to the first lead 2 and the second lead 3 by the reinforcing member 5, it can be stably arranged even if it is not mounted on the lead or the substrate. In addition, since each light emitting region 14 of the semiconductor light emitting device 1 is exposed from the reinforcing member 5, the emission of laser light is not hindered.

Further, according to the present embodiment, the element main surface 1a of the semiconductor light emitting element 1 is covered with the translucent resin 6 having translucency and a low elastic modulus. The light-transmitting resin 6 transmits the laser light emitted by the semiconductor light-emitting element 1 and can suppress the stress applied to the light-emitting region 14 having the mesa structure.

20-33 illustrate another embodiment of the present disclosure. In these figures, the same or similar elements as in the above embodiment are denoted by the same reference numerals as in the above embodiment.

<Second embodiment>
FIG. 20 is a cross-sectional view showing a semiconductor light emitting device A20 according to the second embodiment of the present disclosure, corresponding to FIG. In the semiconductor light emitting device A20 of this embodiment, the reinforcing member 5 covers the main surface 21 of the first lead 2 and the main surface 31 of the second lead 3, and also partially covers the first bonding wire 71 and the second bonding wire 72. It differs from the first embodiment in that the

In this embodiment, the thicknesses (dimensions in the z direction) of the first leads 2 and the second leads 3 are thinner than those of the first leads 2 and the second leads 3 according to the first embodiment. The reinforcing member 5 covers the principal surface 21 of the first lead 2 and the principal surface 31 of the second lead 3 . Further, the reinforcing member 5 is bonded to the main surface 21 of the first lead 2 of the first bonding wire 71 and to the main surface 31 of the second lead 3 of the second bonding wire 72 . It also covers the part where it is.

Also according to this embodiment, the semiconductor light emitting device 1 is not mounted on a lead or substrate, so the semiconductor light emitting device A20 can be made low profile. Further, the reinforcing member 5 covers the semiconductor light emitting element 1, the first lead 2, and the second lead 3 with the element main surface 1a of the semiconductor light emitting element 1 exposed. Therefore, the semiconductor light emitting device 1 can be stably arranged, and the emission of laser light is not hindered. Further, according to this embodiment as well, since the element main surface 1a of the semiconductor light emitting element 1 is covered with the translucent resin 6, the semiconductor light emitting device A20 can emit laser light, Stress can be suppressed.

<Third Embodiment>
FIG. 21 is a plan view showing a semiconductor light emitting device A30 according to the third embodiment of the present disclosure, which corresponds to FIG. In addition, in FIG. 21, the light is transmitted through the translucent resin 6 for convenience of understanding. The semiconductor light emitting device A30 of this embodiment differs from the first embodiment in that the outer wall member 4 does not have the second side portion 47 .

Also according to this embodiment, the semiconductor light emitting device 1 is not mounted on a lead or substrate, so the semiconductor light emitting device A30 can be made low profile. Further, the reinforcing member 5 covers the semiconductor light emitting element 1, the first lead 2, and the second lead 3 with the element main surface 1a of the semiconductor light emitting element 1 exposed. Therefore, the semiconductor light emitting device 1 can be stably arranged, and the emission of laser light is not hindered. Further, according to the present embodiment as well, since the element main surface 1a of the semiconductor light emitting element 1 is covered with the translucent resin 6, the semiconductor light emitting device A30 can emit laser light and the light emitting region 14 is covered. Stress can be suppressed.

<Fourth Embodiment>
FIG. 22 is a plan view showing a semiconductor light emitting device A40 according to the fourth embodiment of the present disclosure, which corresponds to FIG. In addition, in FIG. 22, the light is transmitted through the translucent resin 6 for convenience of understanding. The semiconductor light emitting device A40 of this embodiment differs from that of the first embodiment in that the outer wall member 4 does not have the first side portion 46 .

Also according to this embodiment, the semiconductor light emitting device 1 is not mounted on a lead or substrate, so the semiconductor light emitting device A30 can be made low profile. Further, the reinforcing member 5 covers the semiconductor light emitting element 1, the first lead 2, and the second lead 3 with the element main surface 1a of the semiconductor light emitting element 1 exposed. Therefore, the semiconductor light emitting device 1 can be stably arranged, and the emission of laser light is not hindered. Further, according to the present embodiment as well, since the element main surface 1a of the semiconductor light emitting element 1 is covered with the translucent resin 6, the semiconductor light emitting device A30 can emit laser light and the light emitting region 14 is covered. Stress can be suppressed.

<Fifth Embodiment>
23 and 24 are diagrams for explaining the semiconductor light emitting device A50 according to the fifth embodiment of the present disclosure. FIG. 23 is a plan view showing the semiconductor light emitting device A50, corresponding to FIG. FIG. 24 is a cross-sectional view showing the semiconductor light emitting device A50, corresponding to FIG. In addition, in FIG. 23, the light is transmitted through the translucent resin 6 for convenience of understanding. The semiconductor light emitting device A50 of this embodiment differs from that of the first embodiment in that the outer wall member 4 is not provided.

Also according to this embodiment, the semiconductor light emitting device 1 is not mounted on a lead or substrate, so the semiconductor light emitting device A30 can be made low profile. Further, the reinforcing member 5 covers the semiconductor light emitting element 1, the first lead 2, and the second lead 3 with the element main surface 1a of the semiconductor light emitting element 1 exposed. Therefore, the semiconductor light emitting device 1 can be stably arranged, and the emission of laser light is not hindered. Further, according to the present embodiment as well, since the element main surface 1a of the semiconductor light emitting element 1 is covered with the translucent resin 6, the semiconductor light emitting device A30 can emit laser light and the light emitting region 14 is covered. Stress can be suppressed.

<Sixth embodiment>
25 and 26 are diagrams for explaining a semiconductor light emitting device A60 according to the sixth embodiment of the present disclosure. FIG. 25 is a bottom view of the semiconductor light emitting device A60, corresponding to FIG. FIG. 26 is a cross-sectional view showing the semiconductor light emitting device A60, corresponding to FIG. The semiconductor light emitting device A60 of this embodiment differs from the first embodiment in that the insulating layer 75 is not provided.

In this embodiment, the semiconductor light emitting device A60 does not include the insulating layer 75, and the element back surface 1b of the semiconductor light emitting element 1 is exposed from the reinforcing member 5. As shown in FIG. The element back surface 1 b of the semiconductor light emitting element 1 is flush with the back surface 52 of the reinforcing member 5 .

Also according to this embodiment, since the semiconductor light emitting element 1 is not mounted on a lead or substrate, the semiconductor light emitting device A60 can be made low profile. Furthermore, according to the present embodiment, since the insulating layer 75 is not arranged on the device back surface 1b of the semiconductor light emitting device 1, it is possible to further reduce the height. Further, the reinforcing member 5 covers the semiconductor light emitting element 1, the first lead 2, and the second lead 3 with the element main surface 1a of the semiconductor light emitting element 1 exposed. Therefore, the semiconductor light emitting device 1 can be stably arranged, and the emission of laser light is not hindered. Further, according to the present embodiment as well, since the element main surface 1a of the semiconductor light emitting element 1 is covered with the translucent resin 6, the semiconductor light emitting device A60 can emit laser light and the light emitting region 14 is covered. Stress can be suppressed.

<Seventh Embodiment>
27 and 28 are diagrams for explaining a semiconductor light emitting device A70 according to the seventh embodiment of the present disclosure. FIG. 27 is a plan view showing the semiconductor light emitting device A70, corresponding to FIG. FIG. 28 is a cross-sectional view showing the semiconductor light emitting device A70, corresponding to FIG. In addition, in FIG. 27, the light is transmitted through the translucent resin 6 for convenience of understanding. The semiconductor light emitting device A70 of this embodiment differs from that of the first embodiment in the shapes of the first lead 2 and the second lead 3 .

The first lead 2 according to the present embodiment does not have the projecting portion 25 on one side in the y direction (upward in FIG. 27), and the concave portion 24 is provided on one side in the y direction (upward in FIG. 27). It does not have a facing area. Instead, the first lead 2 has an end surface 26 which is orthogonal to the main surface 21 and the back surface 22 and extends toward one side (upward in FIG. 27) in the y direction, that is, the semiconductor light emitting element 1 and is the opposite side. The end surface 26 is exposed from the outer peripheral surface 43 of the outer wall member 4 and connected to the back surface 22 exposed from the bottom surface 42 of the outer wall member 4 . Moreover, in this embodiment, the end surface 26 is flush with the outer peripheral surface 43 of the outer wall member 4 .

The second lead 3 according to the present embodiment does not have the projecting portion 35 on the other side in the y direction (downward in FIG. 27), and the concave portion 34 faces the other side in the y direction (downward in FIG. 27). It does not have a facing area. Instead, the second lead 3 has an end surface 36 which is orthogonal to the main surface 31 and the back surface 32 and extends toward the other (lower in FIG. is the opposite side. The end surface 36 is exposed from the outer peripheral surface 43 of the outer wall member 4 and connected to the rear surface 32 exposed from the bottom surface 42 of the outer wall member 4 . Moreover, in this embodiment, the end surface 36 is flush with the outer peripheral surface 43 of the outer wall member 4 .

Also according to this embodiment, the semiconductor light emitting device 1 is not mounted on a lead or substrate, so the semiconductor light emitting device A70 can be made low profile. Further, the reinforcing member 5 covers the semiconductor light emitting element 1, the first lead 2, and the second lead 3 with the element main surface 1a of the semiconductor light emitting element 1 exposed. Therefore, the semiconductor light emitting device 1 can be stably arranged, and the emission of laser light is not hindered. Further, according to this embodiment as well, since the element main surface 1a of the semiconductor light emitting element 1 is covered with the translucent resin 6, the semiconductor light emitting device A70 can emit laser light, Stress can be suppressed. Furthermore, the end face 26 of the first lead 2 and the end face 36 of the second lead 3 are exposed from the outer wall member 4 . Therefore, when the semiconductor light emitting device A70 is mounted on the wiring board, solder fillets are formed on the end faces 26 and 36, so that the bonding state after mounting can be easily determined by visual inspection.

<Eighth embodiment>
FIG. 29 is a cross-sectional view showing a semiconductor light emitting device A80 according to the eighth embodiment of the present disclosure, which corresponds to FIG. The semiconductor light-emitting device A80 of the present embodiment differs from the first embodiment in that it does not include the translucent resin 6 but includes a lid 65 .

In the semiconductor light emitting device A80, the translucent resin 6 is not formed in the opening 45 of the outer wall member 4. As shown in FIG. Instead, the semiconductor light emitting device A80 includes a lid 65 that closes the opening 45 of the outer wall member 4. As shown in FIG. The lid 65 has a rectangular plate-like shape when viewed in the z direction, and is joined to the top surface 41 of the outer wall member 4 by a joining material (not shown) to close the opening 45 . Also, the lid 65 allows the laser light emitted by the semiconductor light emitting device 1 to pass therethrough. In this embodiment, the material of the lid 65 is glass. Note that the shape and material of the lid 65 are not limited.

Also according to this embodiment, the semiconductor light emitting device 1 is not mounted on a lead or substrate, so the semiconductor light emitting device A80 can be made low profile. Further, the reinforcing member 5 covers the semiconductor light emitting element 1, the first lead 2, and the second lead 3 with the element main surface 1a of the semiconductor light emitting element 1 exposed. Therefore, the semiconductor light emitting device 1 can be stably arranged, and the emission of laser light is not hindered. Further, according to the present embodiment, since the element main surface 1a of the semiconductor light emitting element 1 is not in contact with the resin, the light emitting region 14 is not stressed. Further, since the lid 65 that transmits the laser light is arranged at a position facing the element main surface 1a, the semiconductor light emitting device A80 can emit laser light while protecting the element main surface 1a.

<Ninth Embodiment>
30 and 31 are diagrams for explaining a semiconductor light emitting device A90 according to the ninth embodiment of the present disclosure. FIG. 30 is a cross-sectional view showing the semiconductor light emitting device A90, corresponding to FIG. FIG. 31 is an enlarged cross-sectional view of a main part showing the semiconductor light emitting element 1 of the semiconductor light emitting device A90, corresponding to FIG. In the semiconductor light emitting device A90 of this embodiment, the first lead 2 and the second lead 3 function as anode terminals, and the conductive layer 76 in contact with the back surface 1b of the semiconductor light emitting element 1 functions as a cathode terminal. It differs from the embodiment.

In this embodiment, the semiconductor forming the semiconductor substrate 101 included in the element body 10 of the semiconductor light emitting element 1 is, for example, Si-doped n-type GaAs. The semiconductor forming the semiconductor substrate 101 may be other than GaAs. Further, as shown in FIG. 31, a rear surface electrode 13 is arranged on the element rear surface 1b of the element main body 10. As shown in FIG. The back surface electrode 13 is formed on the back surface (the surface facing away from the front surface) of the semiconductor substrate 101, and is made of metal, for example. The back electrode 13 is electrically connected to the first semiconductor layer 102 through the semiconductor substrate 101 . The back electrode 13 becomes a cathode electrode.

In addition, the semiconductor light emitting device A90 includes a conductive layer 76 instead of the insulating layer 75. As shown in FIG. Conductive layer 76 is formed by drying and hardening a die attach paste containing metal particles such as silver (Ag), for example. Since the conductive layer 76 contains metal particles in this way, the conductive layer 76 has conductivity. Also, the thermal conductivity of the conductive layer 76 is relatively high. As shown in FIG. 30, the conductive layer 76 has a back surface 76b facing the same side as the element back surface 1b of the semiconductor light emitting element 1 in the z direction. The rear surface 76b is exposed from the reinforcing member 5 and flush with a rear surface 52 (described later) of the reinforcing member 5, and functions as a rear surface terminal. Since the conductive layer 76 is in contact with the back surface electrode 13 (cathode electrode) arranged on the back surface 1b of the semiconductor light emitting element 1 and is electrically connected, it functions as a cathode terminal.

Further, in this embodiment, as shown in FIG. 31, the second electrode 12 of the semiconductor light emitting device 1 is in contact with the conductive layer 107 and electrically connected to the second semiconductor layer 104, like the first electrode 11. . Therefore, the second electrode 12 also becomes an anode electrode. Also, the second lead 3 is electrically connected to the second electrode 12 via the second bonding wire 72 , and thus functions as an anode terminal in the same manner as the first lead 2 .

Also according to this embodiment, since the semiconductor light emitting element 1 is not mounted on a lead or substrate, the semiconductor light emitting device A90 can be made low profile. Further, the reinforcing member 5 covers the semiconductor light emitting element 1, the first lead 2, and the second lead 3 with the element main surface 1a of the semiconductor light emitting element 1 exposed. Therefore, the semiconductor light emitting device 1 can be stably arranged, and the emission of laser light is not hindered. Further, according to the present embodiment as well, since the element main surface 1a of the semiconductor light emitting element 1 is covered with the translucent resin 6, the semiconductor light emitting device A90 can emit laser light, Stress can be suppressed.

The semiconductor light emitting device A90 does not have to include the conductive layer 76, as in the sixth embodiment. In this case, the back surface electrode 13 formed on the element back surface 1b of the semiconductor light emitting element 1 is exposed from the reinforcing member 5 and functions as a cathode terminal.

<Tenth Embodiment>
32 and 33 are diagrams for explaining the semiconductor light emitting device A100 according to the tenth embodiment of the present disclosure. FIG. 32 is a plan view showing the semiconductor light emitting device A100, corresponding to FIG. FIG. 33 is a cross-sectional view showing the semiconductor light emitting device A100, corresponding to FIG. In addition, in FIG. 32, the light is transmitted through the translucent resin 6 for convenience of understanding. The semiconductor light emitting device A100 of this embodiment is different from the first embodiment in that the second lead 3 is not provided and the conductive layer 76 in contact with the element back surface 1b of the semiconductor light emitting element 1 functions as a cathode terminal. .

The semiconductor light emitting device 1 according to this embodiment is the same as the semiconductor light emitting device 1 (see FIG. 31) according to the ninth embodiment. In this embodiment, the semiconductor light emitting device A100 includes a conductive layer 76 instead of the insulating layer 75, like the semiconductor light emitting device A90. Since the conductive layer 76 is electrically connected to the back surface electrode 13 arranged on the element back surface 1b of the semiconductor light emitting element 1, the conductive layer 76 functions as a cathode terminal. Moreover, the semiconductor light emitting device A100 does not have the second lead 3 . In other words, the semiconductor light emitting device A100 does not have the second lead 3 in the semiconductor light emitting device A90.

Also according to this embodiment, since the semiconductor light emitting element 1 is not mounted on a lead or substrate, the semiconductor light emitting device A100 can be made low profile. Further, the reinforcing member 5 covers the semiconductor light emitting element 1 and the first lead 2 with the element main surface 1a of the semiconductor light emitting element 1 exposed. Therefore, the semiconductor light emitting device 1 can be stably arranged, and the emission of laser light is not hindered. Further, according to the present embodiment as well, since the element main surface 1a of the semiconductor light emitting element 1 is covered with the translucent resin 6, the semiconductor light emitting device A100 can emit laser light, Stress can be suppressed. Furthermore, since the semiconductor light emitting device A100 does not have the second lead 3, the dimension in the y direction can be reduced.

The semiconductor light emitting device according to the present disclosure is not limited to the embodiments described above. The specific configuration of each part of the semiconductor light emitting device according to the present disclosure can be changed in various ways.

[Appendix 1]
A semiconductor light-emitting device having a device main surface having a light-emitting region and a device back surface facing in a thickness direction opposite to the device main surface;
a first lead that is spaced apart from the semiconductor light emitting element and electrically connected to the semiconductor light emitting element;
a reinforcing member covering the semiconductor light emitting element and the first lead and having a reinforcing member back surface facing the same side as the element back surface in the thickness direction;
with
the first lead has a first lead back surface facing the same side as the element back surface in the thickness direction;
The element main surface and the element back surface are exposed from the reinforcing member,
The back surface of the first lead is flush with the back surface of the reinforcing member,
Semiconductor light emitting device.
[Appendix 2]
The back surface of the element is flush with the back surface of the reinforcing member,
1. The semiconductor light emitting device according to Appendix 1.
[Appendix 3]
further comprising an insulating layer provided in contact with the element back surface, having an insulating layer back surface facing the same side as the element back surface in the thickness direction, and made of an insulating resin,
The back surface of the insulating layer is flush with the back surface of the reinforcing member,
1. The semiconductor light emitting device according to Appendix 1.
[Appendix 4]
further comprising a conductive layer provided in contact with the element back surface, having a conductive layer back surface facing the same side as the element back surface in the thickness direction, and containing metal particles;
The semiconductor light emitting device further comprises a back surface electrode arranged on the back surface of the device,
The back surface of the conductive layer is flush with the back surface of the reinforcing member,
1. The semiconductor light emitting device according to Appendix 1.
[Appendix 5]
further comprising a first bonding wire that electrically connects the semiconductor light emitting element and the first lead;
The semiconductor light emitting device further comprises a first electrode arranged on the main surface of the device,
The first bonding wire is connected to the first electrode and the first lead,
5. The semiconductor light emitting device according to any one of Appendices 1 to 4.
[Appendix 6]
The first bonding wire is entirely exposed from the reinforcing member,
The semiconductor light emitting device according to appendix 5.
[Appendix 7]
a second lead that is spaced apart from the semiconductor light emitting element and the first lead and electrically connected to the semiconductor light emitting element;
a second bonding wire that electrically connects the semiconductor light emitting element and the second lead;
further comprising
The semiconductor light emitting device further comprises a second electrode arranged on the main surface of the device,
The second bonding wire is connected to the second electrode and the second lead,
7. The semiconductor light emitting device according to any one of Appendices 1 to 6.
[Appendix 8]
Further comprising an outer wall member surrounding the semiconductor light emitting element when viewed in the thickness direction and having an opening penetrating in the thickness direction,
8. The semiconductor light emitting device according to any one of Appendices 1 to 7.
[Appendix 9]
The outer wall member includes a pair of first side portions spaced apart from each other in a first direction orthogonal to the thickness direction,
The semiconductor light-emitting device according to appendix 8.
[Appendix 10]
The outer wall member further comprises a pair of second side portions spaced apart from each other in a second direction orthogonal to the thickness direction and the first direction,
9. The semiconductor light emitting device according to appendix 9.
[Appendix 11]
the first lead further includes a first lead main surface facing away from the back surface of the first lead in the thickness direction;
At least part of the first lead main surface is exposed from the outer wall member,
11. The semiconductor light emitting device according to any one of Appendices 8 to 10.
[Appendix 12]
the first lead further includes a first lead end surface connected to the first lead main surface and the first lead back surface and facing away from the semiconductor light emitting element;
The first lead end surface is exposed from the outer wall member,
12. The semiconductor light emitting device according to Appendix 11.
[Appendix 13]
A constituent material of the reinforcing member is an epoxy resin having a higher strength than the outer wall member,
13. The semiconductor light emitting device according to any one of Appendices 8 to 12.
[Appendix 14]
further comprising a lid that closes the opening and transmits the laser light emitted by the semiconductor light emitting element;
14. The semiconductor light emitting device according to any one of Appendices 8 to 13.
[Appendix 15]
The lid is a glass plate,
14. The semiconductor light emitting device according to appendix 14.
[Appendix 16]
further comprising a translucent resin that covers the main surface of the device and transmits laser light emitted from the semiconductor light emitting device;
14. The semiconductor light emitting device according to any one of Appendices 1 to 13.
[Appendix 17]
The translucent resin has an elastic modulus lower than that of the reinforcing member,
16. The semiconductor light emitting device according to appendix 16.
[Appendix 18]
The constituent material of the translucent resin is silicone,
18. The semiconductor light emitting device according to appendix 16 or 17.

A10 to A100: semiconductor light emitting device 1: semiconductor light emitting element 1a: element main surface 1b: element back surface 1c: element side surface 10: element body 101: semiconductor substrate 102: first semiconductor layer 103: active layer 104: second semiconductor layer 105 : Insulating layer 105a : Opening 106 : Current constriction layer 106a : Opening 107 : Conductive layer 107a : Opening 11 : First electrode 12 : Second electrode 13 : Back electrode 14 : Light emitting region 2 : First lead 21 : Main surface 22 : Back surface 23 : Side surface 24 : Recessed portion 25 : Protruding portion 25 a : End surface 26 : End surface 3 : Second lead 31 : Main surface 32 : Back surface 33 : Side surface 34 : Recessed portion 35 : Projecting portion 35 a : End surface 36 : End surface 4 : Outer wall member 41 : Top surface 42 : Bottom surface 43 : Outer peripheral surface 44 : Inner peripheral surface 45 : Opening 46 : First side 47 : Second side 5 : Reinforcing member 51 : Main surface 52 : Back surface 6 : Translucent resin 65 : Lid 71 : first bonding wire 72 : second bonding wire 75 : insulating layer 75b : back surface 76 : conductive layer 76b : back surface 91 : metal plate 911 : main surface 912 : back surface 913 : concave portion 914 : through portion 92 : base material 921 : Main surface 93: Outer wall member 931: Opening 932: Back surface 94: Molds 941, 942: Space

Claims (25)

A semiconductor light-emitting device having a device main surface having a light-emitting region and a device back surface facing in a thickness direction opposite to the device main surface;
a first lead that is spaced apart from the semiconductor light emitting element and electrically connected to the semiconductor light emitting element;
a reinforcing member covering the semiconductor light emitting element and the first lead and having a reinforcing member back surface facing the same side as the element back surface in the thickness direction;
an insulating layer provided in contact with the element back surface, having an insulating layer back surface facing the same side as the element back surface in the thickness direction, and made of an insulating resin;
with
the first lead has a first lead back surface facing the same side as the element back surface in the thickness direction;
The element main surface and the element back surface are exposed from the reinforcing member,
The back surface of the first lead and the back surface of the insulating layer are flush with the back surface of the reinforcing member,
Semiconductor light emitting device. Further comprising an outer wall member surrounding the semiconductor light emitting element when viewed in the thickness direction and having an opening penetrating in the thickness direction,
The semiconductor light emitting device according to claim 1 . The outer wall member includes a pair of first side portions spaced apart from each other in a first direction orthogonal to the thickness direction,
3. The semiconductor light emitting device according to claim 2 . The outer wall member further comprises a pair of second side portions spaced apart from each other in a second direction orthogonal to the thickness direction and the first direction,
4. The semiconductor light emitting device according to claim 3 . the first lead further includes a first lead main surface facing away from the back surface of the first lead in the thickness direction;
At least part of the first lead main surface is exposed from the outer wall member,
5. The semiconductor light emitting device according to claim 2 . the first lead further includes a first lead end surface connected to the first lead main surface and the first lead back surface and facing away from the semiconductor light emitting element;
The first lead end surface is exposed from the outer wall member,
6. The semiconductor light emitting device according to claim 5 . A constituent material of the reinforcing member is an epoxy resin having a higher strength than the outer wall member,
7. The semiconductor light emitting device according to claim 2 . further comprising a lid that closes the opening and transmits the laser light emitted by the semiconductor light emitting element;
8. The semiconductor light emitting device according to claim 2 . The lid is a glass plate,
9. The semiconductor light emitting device according to claim 8 . further comprising a translucent resin that covers the main surface of the device and transmits laser light emitted from the semiconductor light emitting device;
8. The semiconductor light emitting device according to claim 2 . The translucent resin has an elastic modulus lower than that of the reinforcing member,
11. The semiconductor light emitting device according to claim 10 . The constituent material of the translucent resin is silicone,
12. The semiconductor light emitting device according to claim 10 or 11 . A semiconductor light-emitting device having a device main surface having a light-emitting region and a device back surface facing in a thickness direction opposite to the device main surface;
a first lead that is spaced apart from the semiconductor light emitting element and electrically connected to the semiconductor light emitting element;
a reinforcing member covering the semiconductor light emitting element and the first lead and having a reinforcing member back surface facing the same side as the element back surface in the thickness direction;
an outer wall member surrounding the semiconductor light emitting element when viewed in the thickness direction and having an opening penetrating in the thickness direction;
with
the first lead has a first lead back surface facing the same side as the element back surface in the thickness direction;
The element main surface and the element back surface are exposed from the reinforcing member,
the back surface of the first lead is flush with the back surface of the reinforcing member;
The outer wall member is
a pair of first side portions spaced apart from each other in a first direction orthogonal to the thickness direction;
a pair of second side portions spaced apart from each other in a second direction orthogonal to the thickness direction and the first direction;
comprising
Semiconductor light emitting device. A semiconductor light-emitting device having a device main surface having a light-emitting region and a device back surface facing in a thickness direction opposite to the device main surface;
a first lead that is spaced apart from the semiconductor light emitting element and electrically connected to the semiconductor light emitting element;
a reinforcing member covering the semiconductor light emitting element and the first lead and having a reinforcing member back surface facing the same side as the element back surface in the thickness direction;
an outer wall member surrounding the semiconductor light emitting element when viewed in the thickness direction and having an opening penetrating in the thickness direction;
with
The first lead is
a first lead back surface facing the same side as the element back surface in the thickness direction ;
a first lead main surface facing away from the back surface of the first lead in the thickness direction;
a first lead end surface connected to the first lead main surface and the first lead back surface and facing away from the semiconductor light emitting element;
with
The element main surface and the element back surface are exposed from the reinforcing member,
the back surface of the first lead is flush with the back surface of the reinforcing member;
at least part of the first lead main surface and the first lead end surface are exposed from the outer wall member;
Semiconductor light emitting device. A semiconductor light-emitting device having a device main surface having a light-emitting region and a device back surface facing in a thickness direction opposite to the device main surface;
a first lead that is spaced apart from the semiconductor light emitting element and electrically connected to the semiconductor light emitting element;
a reinforcing member covering the semiconductor light emitting element and the first lead and having a reinforcing member back surface facing the same side as the element back surface in the thickness direction;
an outer wall member surrounding the semiconductor light emitting element when viewed in the thickness direction and having an opening penetrating in the thickness direction;
with
the first lead has a first lead back surface facing the same side as the element back surface in the thickness direction;
The element main surface and the element back surface are exposed from the reinforcing member,
the back surface of the first lead is flush with the back surface of the reinforcing member;
A constituent material of the reinforcing member is an epoxy resin having a higher strength than the outer wall member,
Semiconductor light emitting device. further comprising a translucent resin that covers the main surface of the device and transmits laser light emitted from the semiconductor light emitting device;
16. The semiconductor light emitting device according to claim 13 . The translucent resin has an elastic modulus lower than that of the reinforcing member,
17. The semiconductor light emitting device according to claim 16. The constituent material of the translucent resin is silicone,
18. The semiconductor light emitting device according to claim 16 or 17. A semiconductor light-emitting device having a device main surface having a light-emitting region and a device back surface facing in a thickness direction opposite to the device main surface;
a first lead that is spaced apart from the semiconductor light emitting element and electrically connected to the semiconductor light emitting element;
a reinforcing member covering the semiconductor light emitting element and the first lead and having a reinforcing member back surface facing the same side as the element back surface in the thickness direction;
an outer wall member surrounding the semiconductor light emitting element when viewed in the thickness direction and having an opening penetrating in the thickness direction;
a lid that closes the opening and transmits the laser light emitted by the semiconductor light emitting element ;
the first lead has a first lead back surface facing the same side as the element back surface in the thickness direction;
The element main surface and the element back surface are exposed from the reinforcing member,
The back surface of the first lead is flush with the back surface of the reinforcing member,
Semiconductor light emitting device. The lid is a glass plate,
20. The semiconductor light emitting device according to claim 19 . The back surface of the element is flush with the back surface of the reinforcing member,
21. The semiconductor light emitting device according to claim 13 . further comprising a conductive layer provided in contact with the element back surface, having a conductive layer back surface facing the same side as the element back surface in the thickness direction, and containing metal particles;
The semiconductor light emitting device further comprises a back surface electrode arranged on the back surface of the device,
The back surface of the conductive layer is flush with the back surface of the reinforcing member,
21. The semiconductor light emitting device according to claim 13 . further comprising a first bonding wire that electrically connects the semiconductor light emitting element and the first lead;
The semiconductor light emitting device further comprises a first electrode arranged on the main surface of the device,
23. The semiconductor light emitting device according to claim 1, wherein said first bonding wire is connected to said first electrode and said first lead. The first bonding wire is entirely exposed from the reinforcing member,
24. The semiconductor light emitting device according to claim 23 . a second lead that is spaced apart from the semiconductor light emitting element and the first lead and electrically connected to the semiconductor light emitting element;
a second bonding wire that electrically connects the semiconductor light emitting element and the second lead;
further comprising
The semiconductor light emitting device further comprises a second electrode arranged on the main surface of the device,
25. The semiconductor light emitting device according to claim 1, wherein said second bonding wire is connected to said second electrode and said second lead.

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