JP7311181B2 - magnetic device - Google Patents

Description

Embodiments of the present invention relate to magnetic devices.

A magnetic device using a magnetic layer is applied to a storage device, an arithmetic device, or the like. Higher densities are desired in magnetic devices.

Japanese Patent No. 6545853

Embodiments of the present invention provide magnetic devices capable of densification.

According to an embodiment of the present invention, a magnetic device includes a first element, a first transistor of a first conductivity type, a second transistor of a second conductivity type, a first wire, a second wire, and a third transistor. including wiring; The first element includes a first conductive member and a first laminate. The first conductive member includes a first portion, a second portion, and a third portion between the first portion and the second portion. The first laminate includes a first magnetic layer and a first opposing magnetic layer provided between the third portion and the first magnetic layer. The first transistor includes a first terminal, a first other terminal and a first gate. The second transistor includes a second end, a second other end and a second gate. The first other end is electrically connected to the first portion. The second other end is electrically connected to the first magnetic layer. The first wiring is electrically connected to the second portion. The second wiring is electrically connected to the first gate and the second gate. The third wiring is electrically connected to the first end and the second end.

FIG. 1 is a schematic perspective view illustrating the magnetic device according to the first embodiment. FIG. FIGS. 2A and 2B are schematic diagrams illustrating the magnetic device according to the first embodiment. FIG. 3(a) to 3(c) are schematic diagrams illustrating the magnetic device according to the first embodiment. FIG. 4 is a schematic perspective view illustrating the magnetic device according to the first embodiment; FIGS. 5A and 5B are schematic diagrams illustrating the magnetic device according to the first embodiment. FIG. FIG. 6 is a schematic diagram illustrating the magnetic device according to the first embodiment. FIG. 7 is a schematic diagram illustrating the magnetic device according to the first embodiment. FIG. 8 is a schematic diagram illustrating the magnetic device according to the first embodiment. FIG. 9 is a schematic perspective view illustrating the magnetic device according to the second embodiment. 10(a) and 10(b) are schematic diagrams illustrating the magnetic device according to the second embodiment. 11(a) and 11(b) are schematic cross-sectional views illustrating the magnetic device according to the second embodiment. FIG. 12 is a schematic cross-sectional view illustrating the magnetic device according to the second embodiment. FIG. 13 is a schematic perspective view illustrating the magnetic device according to the second embodiment; 14(a) and 14(b) are schematic diagrams illustrating the magnetic device according to the third embodiment. 15(a) to 15(e) are schematic transparent plan views illustrating the magnetic device according to the third embodiment. 16(a) to 16(f) are schematic transparent plan views illustrating the magnetic device according to the third embodiment. 17(a) to 17(c) are schematic transparent plan views illustrating the magnetic device according to the third embodiment. FIG. 18 is a schematic perspective view illustrating the magnetic device according to the third embodiment; FIG. 19 is a schematic perspective view illustrating the magnetic device according to the third embodiment; FIG. 20 is a schematic perspective view illustrating the magnetic device according to the fourth embodiment; FIG. 21 is a schematic plan view illustrating the magnetic device according to the fourth embodiment; FIG. 22 is a schematic plan view illustrating the magnetic device according to the fourth embodiment; FIG. 23 is a schematic plan view illustrating the magnetic device according to the fourth embodiment; FIG. 24 is a schematic plan view illustrating the magnetic device according to the fourth embodiment; FIG. 25 is a schematic perspective view illustrating the magnetic device according to the fourth embodiment; FIG. 26 is a schematic plan view illustrating the magnetic device according to the fourth embodiment; FIG. 27 is a schematic plan view illustrating the magnetic device according to the fourth embodiment; FIG. FIG. 28 is a schematic plan view illustrating the magnetic device according to the fourth embodiment; FIG. 29 is a schematic plan view illustrating the magnetic device according to the fourth embodiment; FIG. 30 is a schematic plan view illustrating the magnetic device according to the fourth embodiment; FIG. 31 is a schematic perspective view illustrating the magnetic device according to the fifth embodiment; FIG. 32 is a schematic perspective view illustrating the magnetic device according to the sixth embodiment; FIG. 33 is a schematic plan view illustrating the magnetic device according to the sixth embodiment; FIG. FIG. 34 is a schematic plan view illustrating the magnetic device according to the sixth embodiment; FIG. 35 is a schematic plan view illustrating the magnetic device according to the sixth embodiment; 36 is a schematic plan view illustrating the magnetic device according to the sixth embodiment; FIG. 37 is a schematic plan view illustrating the magnetic device according to the sixth embodiment; FIG. FIG. 38 is a schematic diagram illustrating a magnetic device according to the seventh embodiment; 39(a) and 39(b) are schematic diagrams illustrating the magnetic device according to the seventh embodiment. FIG. 40 is a schematic diagram illustrating the magnetic device according to the seventh embodiment. 41(a) and 41(b) are schematic diagrams illustrating the magnetic device according to the seventh embodiment. 42(a) to 42(d) are schematic diagrams illustrating the magnetic device according to the seventh embodiment. FIG. 43 is a schematic diagram illustrating a magnetic device according to the seventh embodiment; 44(a) and 44(b) are schematic diagrams illustrating the magnetic device according to the seventh embodiment. 45(a) to 45(c) are schematic diagrams illustrating the magnetic device according to the seventh embodiment. FIG. 46 is a schematic diagram illustrating a magnetic device according to the seventh embodiment; FIG. 47 is a schematic diagram illustrating a magnetic device according to the eighth embodiment; FIG. 48 is a schematic diagram illustrating a magnetic device according to the eighth embodiment; 49(a) to 49(e) are schematic diagrams illustrating the magnetic device according to the eighth embodiment. FIG. 50 is a schematic diagram illustrating a magnetic device according to the eighth embodiment; 51(a) to 51(e) are schematic diagrams illustrating the magnetic device according to the eighth embodiment. 52(a) and 52(b) are schematic cross sections illustrating a part of the magnetic device according to the embodiment. FIG. 53 is a schematic diagram illustrating a magnetic device according to an embodiment; FIG. 54 is a schematic diagram illustrating a magnetic device according to an embodiment; FIG. 55 is a schematic diagram illustrating a magnetic device according to an embodiment; FIG. 56 is a schematic diagram illustrating a magnetic device according to an embodiment; FIG. 57 is a schematic diagram illustrating a magnetic device according to an embodiment; FIG. 58 is a schematic diagram illustrating a magnetic device according to an embodiment; FIG. 59 is a schematic diagram illustrating a magnetic device according to an embodiment; 60 is a schematic plan view illustrating the magnetic device according to the embodiment; FIG. FIG. 61 is a schematic plan view illustrating the magnetic device according to the embodiment; FIG. 62 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment; FIG. 63 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment; FIG. 64 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment; FIG. 65 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment; FIG. 66 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment; FIG. 67 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment; FIG. 68 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment; FIG. 69 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment; FIG. 70 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment; FIG. 71 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment; FIG. 72 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment; FIG. 73 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment;

Each embodiment of the present invention will be described below with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each portion, the size ratio between portions, and the like are not necessarily the same as the actual ones. Even when the same parts are shown, the dimensions and ratios may be different depending on the drawing.
In the present specification and each figure, the same reference numerals are given to the same elements as those described above with respect to the previous figures, and detailed description thereof will be omitted as appropriate.

(First embodiment)
FIG. 1 is a schematic perspective view illustrating the magnetic device according to the first embodiment. FIG.
As shown in FIG. 1, the magnetic device 110 according to the embodiment includes a first element 11E, a first conductivity type first transistor Tn1, a second conductivity type second transistor Tp1, a first wiring 77A, It includes a second wiring 77B and a third wiring 77C. As shown in FIG. 1, magnetic device 110 may include controller 70 . The first conductivity type is one of n-type and p-type. The second conductivity type is the other of n-type and p-type. In the following, the first conductivity type is n-type and the second conductivity type is p-type.

The first element 11E includes a first conductive member 21 and a first laminate S1. The first conductive member 21 includes a first portion 21a, a second portion 21b and a third portion 21c. The third portion 21c is between the first portion 21a and the second portion 21b.

The first stacked body S1 includes a first magnetic layer 11 and a first opposing magnetic layer 11o. The first opposing magnetic layer 11 o is between the third portion 21 c and the first magnetic layer 11 .

Let the direction from the 1st part 21a to the 2nd part 21b be a 1st direction.

For example, let the first direction be the X-axis direction. One direction perpendicular to the X-axis direction is defined as the Z-axis direction. A direction perpendicular to the X-axis direction and the Z-axis direction is defined as the Y-axis direction.

A second direction from the third portion 21c to the first magnetic layer 11 crosses the first direction. The second direction is, for example, the Z-axis direction.

In this example, the first stacked body S1 further includes a first nonmagnetic layer 11n. The first nonmagnetic layer 11n is between the first opposing magnetic layer 11o and the first magnetic layer 11. As shown in FIG.

The electrical resistance of the first stack S1 is variable. For example, the direction of the first current ic1 flowing through the first conductive member 21 can change the electrical resistance of the first stacked body S1. A change in electrical resistance is based, for example, on the magnetoresistive effect.

For example, the orientation of the magnetization 11m of the first magnetic layer 11 is substantially fixed. The magnetization 11om of the first opposing magnetic layer 11o can be changed by the first current ic1 flowing through the first conductive member 21. FIG. The first magnetic layer 11 is, for example, a reference layer. The first opposing magnetic layer 11o is a magnetization free layer (or memory layer). The first stacked body S1 includes, for example, an MTJ (Magnetic Tunnel Junction).

The direction of the first current ic1 flowing through the first conductive member 21 changes the direction of the magnetization 11om of the first opposing magnetic layer 11o. The change in the orientation of the magnetization 11 om is believed to be based on, for example, the spin Hall effect.

The first stacked body S1 can be applied, for example, as a memory cell. The first stacked body S1 can be applied, for example, as part of an arithmetic circuit.

As shown in FIG. 1, the first element 11E may include a first electrode 11el. The first electrode 11 el is electrically connected to the first magnetic layer 11 . The electrical resistance of the first laminate S1 corresponds to the electrical resistance between the first electrode 11el and the first conductive member 21, for example.

The first transistor Tn1 includes a first terminal Sn1, a first other terminal Dn1, and a first gate Gn1. The first end Sn1 is, for example, one of the source and the drain. The first other end Dn1 is, for example, the other of the source and the drain.

The second transistor Tp1 includes a second end Sp1, a second other end Dp1, and a second gate Gp1. The second end Sp1 is, for example, one of the source and the drain. The second other end Dp1 is, for example, the other of the source and the drain.

The first other end Dn1 is electrically connected to the first portion 21a. In this example, the conductive portion 75a electrically connects the first other end Dn1 and the first portion 21a.

The second other end Dp1 is electrically connected to the first magnetic layer 11 . In this example, the first connecting member CN1 electrically connects the first magnetic layer 11 and the second other end Dp1.

The first wiring 77A is electrically connected to the second portion 21b. In this example, the conductive portion 75b electrically connects the first wiring 77A and the second portion 21b. The second wiring 77B is electrically connected to the first gate Gn1 and the second gate Gn2. The third wiring 77C is electrically connected to the first end Sn1 and the second end Sp1.

For example, the first wiring 77A functions as a write and read bit line W/R-BL. For example, the second wiring 77B functions as a word line W/R-WL for writing and reading. For example, the third wiring 77C functions as the source line SL.

In the magnetic device 110 according to the embodiment, one bit line is provided for writing and reading, and one word line is provided for writing and reading. Accordingly, the number of wirings can be reduced compared to the case where a bit line for writing, a bit line for reading, a word line for writing, and a word line for reading are provided. This makes it possible to provide a magnetic device capable of increasing the density.

The controller 70 is electrically connected to the first wiring 77A, the second wiring 77B and the third wiring 77C. The control unit 70 can perform a first write operation and a first read operation. The control unit 70 may include, for example, a word line and source line control circuit 70A and a bit line control circuit 70B. The word line and source line control circuit 70A is, for example, a column control circuit. The bit line control circuit 70B is, for example, a row control circuit. A control unit 70 according to the following embodiments may also include a word line and source line control circuit 70A and a bit line control circuit 70B.

For example, in the first write operation, the control unit 70 sets the second wiring 77B (word line W/R-WL) to a selected state (for example, a potential corresponding to "1"), through the first transistor Tn1, to the first write operation. A current is supplied between the first portion 21a and the second portion 21b.

For example, in the first read operation, the control unit 70 sets the second wiring 77B (word line W/R-WL) to a non-selected state (for example, a potential corresponding to "0") via the second transistor Tp1, A value corresponding to the electrical resistance of the first laminate S1 is detected.

Thus, the first transistor Tn1 is used in the write operation, and the second transistor Tp1 is used in the read operation. Thus, the wiring can be shared in these operations.

In the write operation, the first wiring 77A (bit line W/R-BL) may be set to a positive or negative potential (+/-). As a result, the first current ic1 is directed from the first portion 21a to the second portion 21b or from the second portion 21b to the first portion 21a. The direction of the magnetization 11om of the first opposing magnetic layer 11o changes, and the electric resistance of the first stacked body S1 changes.

2(a), 2(b), and 3(a) to 3(c) are schematic diagrams illustrating the magnetic device according to the first embodiment.
FIG. 2(a) is a schematic transparent plan view. FIG. 2(b) is a cross-sectional view taken along line B1-B1' of FIG. 2(a). FIG. 3(a) is a cross-sectional view taken along the line A3-A3' of FIG. 2(a). FIG. 3(b) is a cross-sectional view taken along line A2-A2' of FIG. 2(a). FIG. 3(c) is a cross-sectional view taken along line A1-A1' of FIG. 2(a). In the following figures, insulating portions are omitted as appropriate.

As shown in FIG. 2A, the first stacked body S1, the first conductive member 21, the first transistor Tn1, and the second transistor Tp1 are provided in an area having a size of 4F×4F. "F" corresponds to the minimum feature size, for example.

As shown in FIG. 3C, the second direction (for example, Z-axis direction) from the third portion 21c to the first magnetic layer 11 corresponds to the first direction (X-axis direction) from the first portion 21a to the second portion 21b. direction). As shown in FIG. 3C, in this example, the direction from the first end Sn1 to part of the third wiring 77C is along the second direction (Z-axis direction). In this example, the direction from the first end Sn1 to the second portion 21b is along the second direction (Z-axis direction). As shown in FIG. 3A, the direction from the second end Sp1 to another portion of the third wiring 77C is along the second direction (Z-axis direction). As shown in FIG. 3C, the direction from the first other end Dn1 to the first portion 21a is along the second direction (Z-axis direction).

Such a configuration places the various elements included in the magnetic device 110 in a small area. A magnetic device that can be densified can be provided.

As shown in FIG. 2(a), a first connection member CN1 is provided. The first connection member CN1 electrically connects the first magnetic layer 11 and the second other end Dp1. As shown in FIG. 3A, the direction from the second other end Dp1 to the first connecting member CN1 is along the second direction (Z-axis direction). In this example, the second other end Dp1 is electrically connected to the first magnetic layer 11 of the first stacked body S1 by the conductive portion 75r, the first connection member CN1, and the first electrode 11el.

As shown in FIG. 3B, the direction from the first stacked body S1 to part of the first wiring 77A is along the second direction (Z-axis direction). A magnetic device capable of increasing the density can be provided.

As shown in FIG. 3(c), the first other end Dn1 and the first portion 21a are electrically connected by a conductive portion 75a. The conductive portion 75a extends, for example, along the Z-axis direction.

FIG. 4 is a schematic perspective view illustrating the magnetic device according to the first embodiment;
As shown in FIG. 4, the magnetic device 111 according to the embodiment includes a first element 11E, a first transistor Tn1, a second transistor Tp1, a first wiring 77A, a second wiring 77B, and a third wiring 77C. , a first conductivity type (eg, n-type) third transistor Tn2, a second conductivity type (eg, p-type) fourth transistor Tp2, and a fourth wiring 77D.

The configuration described for the magnetic device 110 can be applied to the first transistor Tn1, the second transistor Tp1, the first wiring 77A, the second wiring 77B, and the third wiring 77C. The magnetic device 111 will be described below with respect to portions different from the magnetic device 110 .

As shown in FIG. 4, the first element 11E further includes a second laminate S2 in addition to the first conductive member 21 and the first laminate S1.

The first conductive member 21 includes a fourth portion 21d and a fifth portion 21e. There is a fifth portion 21e between the second portion 21b and the fourth portion 21d. The second stacked body S2 includes a second magnetic layer 12 and a second opposing magnetic layer 12o provided between the fifth portion 21e and the second magnetic layer 12. As shown in FIG. In this example, the second stacked body S2 further includes a second nonmagnetic layer 12n. The second non-magnetic layer 12n is between the second opposing magnetic layer 12o and the second magnetic layer 12a.

For example, depending on the direction of the first current ic1 flowing through the first conductive member 21, the direction of the magnetization 12om of the second opposing magnetic layer 12o changes. This changes the angle between the direction of the magnetization 12om and the direction of the magnetization 12m of the second magnetic layer 12 . This changes the electrical resistance of the second laminate S2.

In this example, the first element 11E includes a second electrode 12el. The second electrode 12 el is electrically connected to the first magnetic layer 12 . The electrical resistance of the second laminate S2 corresponds to the electrical resistance between the second electrode 12el and the first conductive member 21, for example.

As shown in FIG. 4, the third transistor Tn2 includes a third terminal Sn2, a third other terminal Dn2, and a third gate Gn2. The third end Sn2 is, for example, one of the source and the drain. The third other end Dn2 is, for example, the other of the source and the drain.

The fourth transistor Tp1 includes a fourth end Sp2, a fourth other end Dp2, and a fourth gate Gp2. The fourth end Sp2 is, for example, one of the source and the drain. The fourth other end Dp2 is, for example, the other of the source and the drain.

As shown in FIG. 4, the third other end Dn2 is electrically connected to the fourth portion 21d. In this example, the conductive portion 75c electrically connects the third other end Dn2 and the fourth portion 21d.

The fourth other end Dp2 is electrically connected to the second magnetic layer 12 . In this example, the fourth other end Dp2 and the second magnetic layer 12 are electrically connected by the second connection member CN2.

The fourth wiring 77D is electrically connected to the third gate Gn2 and the fourth gate Gp2. The third wiring 77C is electrically connected to the third end Sn2 and the fourth end Sp2.

For example, the first wiring 77A functions as a write and read bit line W/R-BL for the first stacked body S1 and the second stacked body S2. For example, the second wiring 77B functions as a write and read word line W/R-WL for the first stacked body S1. The fourth wiring 77D functions as a write and read word line W/R-WL for the second stacked body S2. For example, the third wiring 77C functions as the source line SL.

In the magnetic device 111, the wiring for writing and the wiring for reading are shared. This makes it possible to provide a magnetic device capable of increasing the density.

The controller 70 is electrically connected to the first wiring 77A, the second wiring 77B, the third wiring 77C and the fourth wiring 77D.

For example, the controller 70 can perform a first write operation, a second write operation, a first read operation, and a second read operation.

In the first write operation, the control unit 70 selects the second wiring 77B (word lines W/R-WL for writing and reading), and connects the first portion 21a and the second wiring via the first transistor Tn1. A current is supplied between it and the portion 21b. In the second write operation, the control unit 70 selects the fourth wiring 77D (word lines W/R-WL for writing and reading), and connects the fourth portion 21d and the second wiring via the third transistor Tn2. A current is supplied between the portions 21b.

In the first read operation, the control unit 70 sets the second wiring 77B (word lines W/R-WL for writing and reading) to a non-selected state, and controls the first stacked body S1 via the second transistor Tp1. Detect the value corresponding to the electrical resistance. In the second read operation, the control unit 70 sets the fourth wiring 77D to a non-selected state and detects a value corresponding to the electrical resistance of the second stacked body S2 via the fourth transistor Tp2.

The control unit 70 may perform the following first write operation, second write operation, and read operation. In the first write operation, the control section 70 selects the second wiring 77B and supplies current between the first portion 21a and the second portion 21b via the first transistor Tn1. In the second write operation, the controller 70 selects the fourth wiring 77D and supplies current between the fourth portion 21d and the second portion 21b via the third transistor Tn2. In the read operation, the control unit 70 puts the second wiring 77B and the fourth wiring 77D into a non-selected state, and detects a value corresponding to the potential of the second portion 21b via the second transistor Tp1 and the fourth transistor Tp2. .

FIGS. 5A, 5B, and 6 are schematic diagrams illustrating the magnetic device according to the first embodiment.
FIG. 5(a) is a schematic transparent plan view. FIG. 5(b) is a cross-sectional view taken along line A1-A1' of FIG. 5(a). FIG. 6 is a cross-sectional view taken along the line B1-B1' of FIG. 5(a).

As shown in FIG. 5A, a first stacked body S1, a second stacked body S2, a first conductive member 21, a first transistor Tn1, a second transistor Tp1, a third transistor Tn2, and a fourth transistor Tp2 are , is provided in an area of size 6F×4F.

As shown in FIG. 5B, the second direction from the third portion 21c to the first magnetic layer 11 crosses the first direction (X-axis direction) from the first portion 21a to the second portion 21b. The second direction is, for example, the Z-axis direction. The direction from the fifth portion 21e to the second magnetic layer 12 is along the second direction.

As shown in FIG. 5A, the direction from the second end Sp1 to part of the third wiring 77C is along the second direction (Z-axis direction).

As shown in FIG. 5A, the position of the second wiring 77B in the first direction (X-axis direction) corresponds to the position of the first portion 21a in the first direction and the position of the fourth portion 21d in the first direction. is between The position of the fourth wiring 77D in the first direction is between the position of the second wiring 77B in the first direction and the position of the fourth portion 21d in the first direction. The position of the third wiring 77C in the first direction is between the position of the second wiring 77B in the first direction and the position of the fourth wiring 77D in the first direction.

As shown in FIG. 5B, the direction from the first other end Dn1 to the first portion 21a is along the second direction (Z-axis direction). The direction from the first end Sn1 to part of the third wiring 77C is along the second direction (Z-axis direction). The direction from the third other end Dn2 to the fourth portion 21d is along the second direction (Z-axis direction).

As shown in FIG. 5B, a first connection member CN1 and a second connection member CN2 are provided. As shown in FIG. 4, the first connection member CN1 electrically connects the first magnetic layer 11 and the second other end Dp1. As shown in FIG. 4, the second connection member CN2 electrically connects the second magnetic layer 12 and the fourth other end Dp2.

As shown in FIGS. 5A and 5B, the direction from the second wiring 77B to the first connection member CN1 is along the second direction (Z-axis direction). As shown in FIGS. 5A and 5B, the direction from the fourth wiring 77D to the second connection member CN2 is along the second direction (Z-axis direction).

As shown in FIG. 6, the position of the fourth wiring 77D in the Z-axis direction is between the position of the third gate Gn2 in the Z-axis direction and the position of the first conductive member 21 in the Z-axis direction. As shown in FIG. 6, the position of the fourth wiring 77D in the Z-axis direction is between the position of the third gate Gn2 in the Z-axis direction and the position of the first wiring 77A in the Z-axis direction. A magnetic device that can be densified can be provided.

7 and 8 are schematic diagrams illustrating the magnetic device according to the first embodiment.
FIG. 7 is a perspective view. FIG. 8 is a schematic transparent plan view.

As shown in FIG. 7, the magnetic device 112 according to the embodiment includes a fifth wiring 77E. Other configurations of the magnetic device 112 are similar to those of the magnetic device 111, for example. An example of the fifth wiring 77E will be described below.

As shown in FIG. 7, the fifth wiring 77E is electrically connected to at least one of the first portion 21a and the fourth portion 21d. For example, the first portion 21a is connected to the control section 70 by the fifth wiring 77E. For example, the fourth portion 21d is connected to the control section 70 by the fifth wiring 77E.

The fifth wiring 77E connected to the first portion 21a functions, for example, as a read bit line R-BL for the first stacked body S1. The fifth wiring 77E connected to the fourth portion 21d functions, for example, as a read bit line R-BL for the second stacked body S2.

Also in the magnetic device 112, the wiring is also used in the write operation. A magnetic device that can be densified can be provided.

As shown in FIGS. 7 and 8, the magnetic device 112 may further include a third connecting member CN3 and a fourth connecting member CN4. The third connection member CN3 electrically connects the fifth wiring 77E and the first portion 21a. The fourth connection member CN4 electrically connects the fifth wiring 77E and the fourth portion 21d.

As shown in FIG. 8, the third connection member CN3 overlaps the first other end Dn1 in the second direction (Z-axis direction). The fourth connection member CN4 overlaps the third other end Dn2 in the second direction. A magnetic device that can be densified can be provided.

A first conductive portion 25e and a second conductive portion 26e, which will be described later, may be provided in the magnetic device according to the first embodiment. In the first embodiment, the transistor may be a fin-type transistor (for example, fin-type FET), which will be described later.

(Second embodiment)
FIG. 9 is a schematic perspective view illustrating the magnetic device according to the second embodiment.
As shown in FIG. 9, the magnetic device 120 according to the embodiment includes a first element 11E, a first conductive portion 25e, and a second conductive portion 26e. As shown in FIG. 9, the magnetic device 120 may include a first transistor Tr1, a second transistor Tr2, a controller 70, and the like.

As shown in FIG. 9, the first element 11E includes a first conductive member 21 and a first laminate S1. The first conductive member 21 includes a first portion 21a, a second portion 21b, and a third portion 21c. The third portion 21c is between the first portion 21a and the second portion 21b.

The first stacked body S1 includes a first magnetic layer 11 and a first opposing magnetic layer 11o. The first opposing magnetic layer 11 o is provided between the third portion 21 c and the first magnetic layer 11 . The first stacked body S1 may include a first nonmagnetic layer 11n.

The first conductive portion 25e is electrically connected to the first portion 21a. The second conductive portion 26e is electrically connected to the second portion 21b. The direction from the first conductive portion 25e to the second conductive portion 26e is along the first direction. The first direction corresponds to the X-axis direction.

The first portion 21a is between a portion 25p of the first conductive portion 25e and a portion 26p of the second conductive portion 26e in the first direction (X-axis direction). The second portion 21b is between the first portion 21a and a portion 26p of the second conductive portion 26e in the first direction (X-axis direction).

For example, the first portion 21a includes a first side surface sf1. The first side surface sf1 intersects with the first direction (X-axis direction). The second portion 21b includes a second side surface sf2. The second side surface sf2 intersects with the first direction (X-axis direction).

The part 25p of the first conductive portion 25e faces the first side surface sf1. The part 26p of the second conductive portion 26e faces the second side surface sf2. For example, the portion 25p contacts the first side surface sf1. The part 26p is in contact with the second side surface sf2.

In the magnetic device 120 , a first conductive portion 25 e and a second conductive portion 26 e are connected to side surfaces of the first conductive member 21 . As a result, the area of the connecting portion can be narrowed. Stable connection becomes possible. According to the magnetic device 120, it is possible to provide a magnetic device capable of increasing the density.

As shown in Figure 9, the magnetic device 120 may include a first insulating portion 25i and a second insulating portion 26i. The first insulating portion 25i is between the first stack S1 and the first conductive portion 25e. The second insulating portion 26i is between the first stack S1 and the second conductive portion 26e. Stable electrical insulation can be obtained.

For example, a structure that becomes the first conductive member 21 and the laminate S1 is formed. The structure includes a laminated film that forms the laminated body S1. This laminated film is etched to obtain the first laminated body S1. After the insulating portion is formed on the side wall of the first stacked body S1, the film that will become the first conductive member 21 is further etched. Thereby, the side surface of the first conductive member 21 is formed. The first conductive portion 25e and the second conductive portion 26e are obtained by forming the conductive film so as to be in contact with the side surfaces.

In embodiments, at least one of the first conductive portion 25e and the second conductive portion 26e may be electrically connected to the transistor. In this example, the first conductive portion 25e is electrically connected to the first transistor Tr1, and the second conductive portion 26e is electrically connected to the second transistor Tr2.

10(a) and 10(b) are schematic diagrams illustrating the magnetic device according to the second embodiment.
FIG. 10(a) is a schematic transparent plan view. FIG. 10(b) is a cross-sectional view.

As shown in FIGS. 10(a) and 10(b), the first conductive member 21 is provided between the insulating portion 27i and the insulating portion 27j. A first conductive portion 25 e is provided between the insulating portion 27 i and the first conductive member 21 . A second conductive portion 26e is provided between the first conductive member 21 and the insulating portion 27j.

As shown in FIG. 10B, for example, the first conductive member 21 is provided between the insulating portion 27k and the laminate S1.

As shown in FIG. 10B, the second transistor Tr2 includes a second source Sr2, a second drain Dr2 and a second gate Gr2. In this example, the conductive portion 75d electrically connects the second drain Dr2 and the second conductive portion 26e. The second source Sr2 is electrically connected to the third wiring 77C (source line SL). In this example, the direction from the second gate Gr2 to the first stacked body S1 is along the Z-axis direction.

As shown in FIG. 10B, the first conductive portion 25e is electrically connected to the write bit line W-BL. The first magnetic layer 11 is electrically connected to the read bit line R-BL.

As shown in FIG. 10B, the lower end 25L of the first conductive portion 25e and the lower end 26L of the second conductive portion 26e are located below the first conductive member 21. As shown in FIG. The transistors (eg, first transistor Tr1 and second transistor Tr2, etc.) are below the lower ends 25L and 26L.

11(a) and 11(b) are schematic cross-sectional views illustrating the magnetic device according to the second embodiment.
In the magnetic device 121 shown in FIG. 11A, the position of the second gate Gr2 in the X-axis direction is shifted from the position of the first stacked body S1 in the X-axis direction.

In the magnetic device 122 shown in FIG. 11B, the length of the laminate S1 in the X-axis direction is longer than the length of the laminate S1 in the magnetic device 121 in the X-axis direction.

In the magnetic devices 120 to 122 according to the second embodiment, the first conductive member 21 is provided between the first conductive portion 25e and the second conductive portion 26e. A stable electrical connection can be obtained even when processing conditions vary.

FIG. 12 is a schematic cross-sectional view illustrating the magnetic device according to the second embodiment.
As shown in FIG. 12, the magnetic device 123 is provided with a plurality of first elements 11E. The configuration described with reference to FIG. 9 is applied to each of the plurality of first elements 11E.

FIG. 13 is a schematic perspective view illustrating the magnetic device according to the second embodiment;
As shown in FIG. 13, in the magnetic device 124, a first conductivity type first transistor Tn1 is provided as the first transistor Tr1, and a second conductivity type second transistor Tp1 is provided as the second transistor Tr2. . As a result, wiring can be omitted as described in the first embodiment. It is possible to provide a magnetic device capable of achieving higher densities.

(Third embodiment)
14(a) and 14(b) are schematic diagrams illustrating the magnetic device according to the third embodiment.
FIG. 14(a) is a perspective view. FIG. 14(b) is a schematic transparent plan view.

As shown in FIG. 14A, the magnetic device 130 according to the embodiment includes a first element 11E and a first transistor Tr1. As shown in FIG. 14( a ), the magnetic device 130 may include a controller 70 .

As shown in FIG. 14(a), the first element 11E includes a first conductive member 21 and a first laminate S1. The first conductive member 21 includes a first portion 21a, a second portion 21b, and a third portion 21c. The third portion 21c is between the first portion 21a and the second portion 21b. The first stacked body S1 includes a first magnetic layer 11 and a first opposing magnetic layer 11o. The first opposing magnetic layer 11 o is provided between the third portion 21 c and the first magnetic layer 11 . In this example, the first laminate S1 includes a first nonmagnetic layer 11n.

The first transistor Tr1 is a fin-type transistor. For example, the first transistor Tr1 is a fin-type FET (field effect transistor).

As shown in FIG. 14(a), the direction from the first portion 21a to the second portion 21b is along the first direction. The first direction corresponds to the X-axis direction. A second direction from the third portion 21c to the first magnetic layer 11 crosses the first direction. The second direction is, for example, the Z-axis direction.

The first transistor Tr<b>1 includes a first semiconductor member 35 . The first semiconductor member 35 extends along the first direction (X-axis direction).

In this example, as shown in FIG. 14A, the direction from at least part of the first semiconductor member 35 to at least part of the first conductive member 21 is along the second direction (Z-axis direction). For example, the first conductive member 21 overlaps the first semiconductor member 35 in the Z-axis direction.

The first semiconductor member 35 is electrically connected to the first conductive member 21, for example. In this example, a first connection portion 31 and a second connection portion 32 are provided. The second connecting portion 32 electrically connects the first semiconductor member 35 to the first conductive member 21 (the second portion 21b in this example).

In one example, the first transistor Tr1 controls current supply to the first conductive member 21 . In one example, the first transistor Tr1 is used to control the measurement (read operation) of the electrical resistance of the first stacked body S1.

Since the first transistor Tr1 has the fin structure, the above operation can be controlled more stably with a small area. Also in the third embodiment, a magnetic device capable of increasing the density can be provided.

As shown in FIG. 14A, the first transistor Tr1 includes a first source Sr1, a first drain Dr1 and a first gate Gr1. In this example, the first drain Dr<b>1 is electrically connected to the second portion 21 b of the first conductive member 21 via the second connection portion 32 . The first source Sr1 is electrically connected to the source line SL.

The first gate Gr1 extends along the Y-axis direction. In this example, the first gate Gr<b>1 faces two side surfaces of the first semiconductor member 35 . The first gate Gr<b>1 faces the upper surface of the first semiconductor member 35 . The first gate Gr1 becomes, for example, the word line WL. Alternatively, the first gate Gr1 is electrically connected to the word line WL, for example.

A first portion 21a of the first conductive member 21 is connected to a write bit line W-BL. The first magnetic layer 11 is electrically connected to the read bit line R-BL. The wiring described above is electrically connected to the control unit 70 . A write operation and a read operation are performed by the control unit 70 .

15(a) to 15(e) are schematic transparent plan views illustrating the magnetic device according to the third embodiment.
A plurality of first semiconductor members 35 are provided in the magnetic devices 130a to 130e shown in FIGS. 15(a) to 15(e). In these magnetic devices, the position of the center of the first conductive member 21 in the Y-axis direction is substantially the same as the position of the center of the first semiconductor member 35 in the Y-axis direction. The first conductive members 21 are provided at symmetrical positions with respect to the positions of the plurality of first semiconductor members 35 .

In the magnetic device 130d, the planar shape of the first conductive member 21 is a flat circular shape, and the planar shape of the first laminate S1 is a flat circular shape. In the magnetic device 130e, the planar shape of the first conductive member 21 is a rectangular shape with rounded corners, and the planar shape of the first laminate S1 is a flat circular shape.

16(a) to 16(f) are schematic transparent plan views illustrating the magnetic device according to the third embodiment.
In the magnetic devices 131a to 131f shown in FIGS. 16(a) to 16(f), the position of the first semiconductor member 35 in the Y-axis direction (the third direction intersecting the plane including the first direction and the second direction) is shifted from the center position of the first conductive member 21 in the Y-axis direction (third direction). The first conductive members 21 are provided at asymmetrical positions with respect to the positions of the plurality of first semiconductor members 35 .

For example, the temperature of the first semiconductor member 35 may rise during operation of the transistor. For example, the temperature rise causes the temperature of the first conductive member 21 and the like to rise. If the first conductive member 21 is provided at an asymmetrical position, the temperature rise in the first conductive member 21 becomes uneven within the first conductive member 21 . This facilitates stable determination of the magnetization 11om of the first opposing magnetic layer 11o. It becomes easier to obtain stable operation.

For example, spin properties such as the spin diffusion length within the first conductive member 21 decrease as the temperature increases. By providing the first conductive member 21 in a non-uniform (for example, asymmetric) region, the recording current density acting on the first opposing magnetic layer 11o thereon can be made non-uniform. This makes it easier to limit the reversal portion of the magnetization 11om of the first opposing magnetic layer 11o. For example, reversal current distribution can be narrowed. This makes it easier to obtain stable operation, for example. For example, high yield can be obtained.

For example, as the temperature of the first semiconductor member 35 rises, uneven stress may be introduced into the first conductive member 21 . As a result, a region where the reversal current density is locally low may be formed in the first conductive member 21 . As a result, the magnetization 11 om is stably reversed easily. It becomes easier to obtain stable operation.

In the magnetic device 131e, the planar shape of the first conductive member 21 is a flat circular shape, and the planar shape of the first laminate S1 is a flat circular shape. In the magnetic device 131f, the planar shape of the first conductive member 21 is a rectangular shape with rounded corners, and the planar shape of the first laminate S1 is a flat circular shape.

17(a) to 17(c) are schematic transparent plan views illustrating the magnetic device according to the third embodiment.
In the magnetic devices 132a to 132c shown in FIGS. 17(a) to 17(c), the first semiconductor member 35 extends in the third direction (eg Y-axis direction). The third direction intersects a plane that intersects the first direction and the second direction. In this example, the direction from part of the first semiconductor member 35 to part of the first conductive member 21 is along the second direction (Z-axis direction). For example, part of the first conductive member 21 overlaps the first semiconductor member 35 in the Z-axis direction.

In the magnetic devices 132a-132c, the position of the first semiconductor member 35 in the X-axis direction is shifted from the center position of the first conductive member 21 in the X-axis direction. For example, the first conductive members 21 are provided at asymmetrical positions with respect to the positions of the plurality of first semiconductor members 35 .

In examples of magnetic devices 130 , 130 a - 130 e , 131 a - 131 f , and 132 a - 132 c , for example, first semiconductor member 35 is electrically connected to first conductive member 21 . In the example of magnetic devices 130c and 131d, a second stack S2 is provided in addition to the first stack S1.

FIG. 18 is a schematic perspective view illustrating the magnetic device according to the third embodiment;
As shown in FIG. 18, the magnetic device 133 has a write bit line W-BL, a read bit line R-BL, a write word line W-WL, and a read word line R-WL. be provided.

The write drain Drw of the first transistor Tr1 is electrically connected to the write bit line W-BL via the second connection portion 32 . The read drain Drr is electrically connected to the read bit line R-BL through the first connection portion 31 . The write bit line W-BL and the first conductive member 21 are electrically connected by the conductive portion 75e. The read bit line R-BL and the first conductive member 21 are electrically connected by the conductive portion 75f.

FIG. 19 is a schematic perspective view illustrating the magnetic device according to the third embodiment;
As shown in FIG. 19, the magnetic device 134 is provided with a first element 11E, a first transistor Tn1, a second transistor Tp1, a first wiring 77A, a second wiring 77B, and a third wiring 77C. The first transistor Tn1 and the second transistor Tp1 are fin transistors. Thus, in the magnetic device according to the first embodiment, at least one of the first transistor Tn1 and the second transistor Tp1 may include a fin transistor.

For example, the first transistor Tn1 includes the second semiconductor member 36. As shown in FIG. The second transistor Tp1 includes a first semiconductor member 35. As shown in FIG.

The magnetic device 134 is provided with a first conductive portion 25e and a second conductive portion 26e. The first conductive portion 25 e is electrically connected to the first portion 21 a of the first conductive member 21 . The second conductive portion 26 e is electrically connected to the second portion 21 b of the first conductive member 21 . The first portion 21a is between a portion of the first conductive portion 25e and a portion 26p of the second conductive portion 26e in the first direction (X-axis direction). The second portion 21b is between the first portion 21a and a portion 26p of the second conductive portion 26e in the first direction.

In this manner, at least two of the first through third embodiments may be combined.

An example of the configuration of elements included in the magnetic device according to the embodiment will be described below.

The first conductive member 21 contains, for example, at least one selected from the group consisting of Ta, W, Re, Os, Ir, Pt, Au, Cu, Ag and Pd. The thickness of the first conductive member 21 is, for example, 3 nm or more and 10 nm or less (eg, 5 nm).

At least one of the first magnetic layer 11 and the second magnetic layer 12 contains, for example, at least one selected from the group consisting of Fe and Co. These magnetic layers may include laminated films. The laminated film has, for example, a structure of CoFe film (thickness: 2 nm)/Ru film (thickness: 0.8 nm)/Co film/CoFeB film (thickness: 2 nm).

At least one of the first opposing magnetic layer 11o and the second opposing magnetic layer 12o contains, for example, at least one selected from the group consisting of Fe and Co, and boron. The thickness of these magnetic layers is, for example, 1 nm or more and 2 nm or less (eg, 1.6 nm).

At least one of the first nonmagnetic layer 11n and the second nonmagnetic layer 12n contains, for example, Mg and oxygen. The thickness of these non-magnetic layers is, for example, 1 nm or more and 2 nm or less (eg, 1.4 nm).

The above material and thickness descriptions are examples, and the configuration of the elements included in the magnetic device may vary.

Embodiments include, for example, the following configurations (eg, technical proposals).
(Configuration 1)
A first element including a first conductive member and a first laminate, wherein the first conductive member includes a first portion, a second portion, and a second portion between the first portion and the second portion. 3 parts, wherein the first laminate includes a first magnetic layer and a first opposing magnetic layer provided between the third part and the first magnetic layer, the first an element;
a first transistor including a first end, a first other end and a first gate;
a second transistor including a second end, a second other end and a second gate;
a first wiring;
a second wiring;
a third wiring;
with
The first other end is electrically connected to the first portion,
The second other end is electrically connected to the first magnetic layer,
the first wiring is electrically connected to the second portion;
the second wiring is electrically connected to the first gate and the second gate;
The magnetic device, wherein the third wiring is electrically connected to the first end and the second end.

(Configuration 2)
further comprising a control unit,
The control unit is electrically connected to the first wiring, the second wiring and the third wiring,
The control unit is capable of performing a first write operation and a first read operation,
In the first write operation, the control unit supplies a current between the first portion and the second portion via the first transistor with the second wiring in a selected state,
The magnetic device according to configuration 1, wherein in the first read operation, the control unit detects a value corresponding to the electrical resistance of the first stacked body via the second transistor while the second wiring is in a non-selected state. .

(Composition 3)
a second direction from the third portion to the first magnetic layer intersects the first direction from the first portion to the second portion;
a direction from the first end to a portion of the third wiring along the second direction,
a direction from the first end to a portion of the second portion is along the second direction,
a direction from the second end to another portion of the third wiring along the second direction,
3. The magnetic device according to configuration 1 or 2, wherein the direction from the first other end to the first portion is along the second direction.

(Composition 4)
further comprising a first connection member electrically connecting the first magnetic layer and the second other end;
4. The magnetic device of configuration 3, wherein a direction from the second end to the portion of the first connecting member is along the second direction.

(Composition 5)
The magnetic device according to any one of configurations 2 to 4, wherein the direction from the first laminate to the first wiring is along the second direction.

(Composition 6)
a third transistor including a third terminal, a third other terminal and a third gate;
a fourth transistor including a fourth terminal, a fourth other terminal and a fourth gate;
a fourth wiring;
further comprising
The first element further includes a second laminate,
the first conductive member includes a fourth portion and a fifth portion, the fifth portion being between the second portion and the fourth portion;
the second laminate includes a second magnetic layer and a second opposing magnetic layer provided between the fifth portion and the second magnetic layer;
The third other end is electrically connected to the fourth portion,
The fourth other end is electrically connected to the second magnetic layer,
the fourth wiring is electrically connected to the third gate and the fourth gate;
The magnetic device according to configuration 1, wherein the third wiring is electrically connected to the third end and the fourth end.

(Composition 7)
further comprising a control unit,
the control unit is electrically connected to the first wiring, the second wiring, the third wiring, and the fourth wiring;
The control unit is capable of performing a first write operation, a second write operation, a first read operation and a second read operation,
In the first write operation, the control unit supplies a current between the first portion and the second portion via the first transistor with the second wiring in a selected state,
In the second write operation, the controller supplies a current between the fourth portion and the second portion via the third transistor with the fourth wiring in a selected state,
In the first read operation, the control unit detects a value corresponding to the electrical resistance of the first stacked body through the second transistor while the second wiring is in a non-selected state,
The magnetic device according to configuration 6, wherein in the second read operation, the controller detects a value corresponding to the electrical resistance of the second stack via the fourth transistor while the fourth wiring is in a non-selected state. .

(Composition 8)
further comprising a control unit,
the control unit is electrically connected to the first wiring, the second wiring, the third wiring, and the fourth wiring;
The control unit is capable of performing a first write operation, a second write operation, and a read operation,
In the first write operation, the control unit supplies a current between the first portion and the second portion via the first transistor with the second wiring in a selected state,
In the second write operation, the controller supplies a current between the fourth portion and the second portion via the third transistor with the fourth wiring in a selected state,
In the read operation, the control unit detects a value corresponding to the potential of the second portion through the second transistor and the fourth transistor while the second wiring and the fourth wiring are in a non-selected state. 7. The magnetic device of configuration 6.

(Composition 9)
a second direction from the third portion to the first magnetic layer intersects the first direction from the first portion to the second portion;
the direction from the fifth portion to the second magnetic layer is along the second direction,
the direction from the second other end to the part of the third wiring is along the second direction,
the position of the second wiring in the first direction is between the position of the first portion in the first direction and the position of the fourth portion in the first direction;
the position of the fourth wiring in the first direction is between the position of the second wiring in the first direction and the position of the fourth portion in the first direction;
Configurations 6 to 8, wherein the position of the third wiring in the first direction is between the position of the second wiring in the first direction and the position of the fourth wiring in the first direction The magnetic device according to any one of .

(Configuration 10)
the direction from the first other end to the first portion is along the second direction,
a direction from the first end to a portion of the third wiring along the second direction,
The magnetic device according to any one of configurations 6 to 9, wherein the direction from the third other end to the fourth portion is along the second direction.

(Composition 11)
a first connecting member that electrically connects the first magnetic layer and the second other end;
a second connection member electrically connecting the second magnetic layer and the fourth other end;
further comprising
the direction from the second wiring to the first connection member is along the second direction,
11. The magnetic device according to configuration 10, wherein a direction from said fourth wiring to said second connecting member is along said second direction.

(Composition 12)
Further comprising a fifth wiring,
7. The magnetic device of configuration 6, wherein the fifth wiring is electrically connected to at least one of the first portion and the fourth portion.

(Composition 13)
Further comprising a third connection member and a fourth connection member,
the third connection member electrically connects the fifth wiring and the first portion;
the fourth connection member electrically connects the fifth wiring and the fourth portion;
the third connection member overlaps the first other end in the second direction;
13. The magnetic device according to configuration 12, wherein the fourth connection member overlaps the third other end in the second direction.

(Composition 14)
a first conductive portion electrically connected to the first portion;
a second conductive portion electrically connected to the second portion;
further comprising
the direction from the first conductive portion to the second conductive portion is along the first direction,
the first portion is between a portion of the first conductive portion and a portion of the second conductive portion in the first direction;
14. The magnetic device of any one of configurations 1-13, wherein the second portion is between the first portion and the portion of the second conductive portion in the first direction.

(Composition 15)
15. The magnetic device of any one of arrangements 1-14, wherein at least one of the first transistor and the second transistor comprises a fin transistor.

(Composition 16)
A first element including a first conductive member and a first laminate, wherein the first conductive member includes a first portion, a second portion, and a second portion between the first portion and the second portion. 3 parts, wherein the first laminate includes a first magnetic layer and a first opposing magnetic layer provided between the third part and the first magnetic layer, the first an element;
a first conductive portion electrically connected to the first portion;
a second conductive portion electrically connected to the second portion;
a transistor;
with
the direction from the first conductive portion to the second conductive portion is along the first direction,
the first portion is between a portion of the first conductive portion and a portion of the second conductive portion in the first direction;
the second portion is between the first portion and the portion of the second conductive portion in the first direction;
A magnetic device, wherein at least one of the first conductive portion and the second conductive portion is electrically connected to the transistor.

(Composition 17)
The first portion includes a first side surface that intersects the first direction,
the second portion includes a second side surface that intersects the first direction;
The part of the first conductive part faces the first side surface,
17. The magnetic device of configuration 16, wherein the portion of the second conductive portion faces the second side.

(Composition 18)
a first insulating portion;
a second insulating portion;
further comprising
the first insulating portion is between the first laminate and the first conductive portion;
17. The magnetic device of configuration 16, wherein the second insulating portion is between the first stack and the second conductive portion.

(Composition 19)
A first element including a first conductive member and a first laminate, wherein the first conductive member includes a first portion, a second portion, and a second portion between the first portion and the second portion. 3 parts, wherein the first laminate includes a first magnetic layer and a first opposing magnetic layer provided between the third part and the first magnetic layer, the first an element;
a fin-type first transistor;
with
the direction from the first portion to the second portion is along the first direction,
a second direction from the third portion to the first magnetic layer intersects the first direction;
the first transistor includes a first semiconductor member;
A magnetic device, wherein a direction from at least a portion of the first semiconductor member to at least a portion of the first conductive member is along the second direction.

(Configuration 20)
The first semiconductor member extends along the first direction,
Configuration 19, wherein a position of the first semiconductor member in a third direction intersecting a plane containing the first direction and the second direction is shifted from a center position of the first conductive member in the third direction. A magnetic device as described.

(Composition 21)
the first semiconductor member extends along a third direction intersecting a plane including the first direction and the second direction;
20. The magnetic device of configuration 19, wherein the position of the first semiconductor member in the first direction is shifted from the center position of the first conductive member in the first direction.

(Composition 22)
The first semiconductor member extends in a third direction,
20. The magnetic device of configuration 19, wherein the third direction intersects a plane that intersects the first direction and the second direction.

(Fourth embodiment)
FIG. 20 is a schematic perspective view illustrating the magnetic device according to the fourth embodiment;
21 to 24 are schematic plan views illustrating the magnetic device according to the fourth embodiment.
21-24 correspond to plan views of each layer of the magnetic device.

As shown in FIG. 20, the magnetic device 140 according to the embodiment includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, a third transistor Tr3, a fourth transistor Tr4, and a fifth transistor Tr5. , a sixth transistor Tr6, a first wiring 77A, a second wiring 77B, a third wiring 77C, a fourth wiring 77D, and a fifth wiring 77E.

As shown in FIGS. 20 and 21, the first transistor Tr1 includes a first end Ts1, a first other end Td1 and a first gate Tg1, and is of the first conductivity type. The second transistor Tr2 includes a second end Ts2, a second other end Td2 and a second gate Tg2, and is of the second conductivity type. The third transistor Tr3 includes a third terminal Ts3, a third other terminal Td3, and a third gate Tg3, and is of the first conductivity type. The fourth transistor Tr4 includes a fourth terminal Ts4, a fourth other terminal Td4 and a fourth gate Tg4, and is of the second conductivity type. The fifth transistor Tr5 includes a fifth terminal Ts5, a fifth other terminal Td5, and a fifth gate Tg5, and is of the first conductivity type. The sixth transistor Tr6 includes a sixth terminal Ts6, a sixth other terminal Td6 and a sixth gate Tg6, and is of the first conductivity type. Hereinafter, the first conductivity type is n-type and the second conductivity type is p-type.

At least part of the first end Ts1 may overlap at least part of the third end Ts3. At least part of the second end Ts2 may overlap at least part of the fourth end Ts4. At least part of the fifth end Ts5 may overlap at least part of the sixth end Ts6. The first end Ts1 may be substantially the same as the third end Ts3. The second end Ts2 may be substantially the same as the fourth end Ts4. The fifth end Ts5 may be substantially the same as the sixth end Ts6.

As shown in FIG. 20, each of the first element 11E and the second element 12E includes a first conductive member 21, a first laminate S1, and a second laminate S2.

The first conductive member 21 includes a first portion 21a, a second portion 21b, a third portion 21c, a fourth portion 21d, and a fifth portion 21e. There is a second portion 21b between the first portion 21a and the fourth portion 21d. There is a third portion 21c between the first portion 21a and the second portion 21b. There is a fifth portion 21e between the second portion 21b and the fourth portion 21d.

The first stacked body S1 includes a first magnetic layer 11 and a first opposing magnetic layer 11o provided between the third portion 21c and the first magnetic layer 11. As shown in FIG. A first non-magnetic layer 11n may be provided between the first opposing magnetic layer 11o and the first magnetic layer 11a.

The second stacked body S2 includes a second magnetic layer 12 and a second opposing magnetic layer 12o provided between the fifth portion 21e and the second magnetic layer 12. As shown in FIG. A second nonmagnetic layer 12n may be provided between the second opposing magnetic layer 12o and the second magnetic layer 12a.

As shown in FIG. 20, the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. In this example, this connection is made by a conductive portion 75a.

The second other end Td2 is electrically connected to the first magnetic layer 11 of the first element 11E and the first magnetic layer 11 of the second element 12E. In this example, this connection is made by the first connecting member CN1.

The third other end Td3 is electrically connected to the fourth portion 21d of the first conductive member 21 of the first element 11E. In this example, this connection is made by a conductive portion 75c.

The fourth other end Td4 is electrically connected to the second magnetic layer 12 of the first element 11E and the second magnetic layer 12 of the second element 12E. In this example, this connection is made by the second connecting member CN2.

The fifth other end Td5 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E. In this example, this connection is made by a conductive portion 75d.

The sixth other end Td6 is electrically connected to the fourth portion 21d of the first conductive member 21 of the second element 12E. In this example, this connection is made by a conductive portion 75e.

The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E. In this example, this connection is made by a conductive portion 75b. The first wiring 77A is, for example, a write and read bit line W/R-BL1.

The second wiring 77B is electrically connected to the first gate Tg1, the second gate Tg2 and the fifth gate Tg5. The second wiring 77B is, for example, a word line W/R-WL1 for writing and reading.

The third wiring 77C is electrically connected to the first end Ts1, the second end Ts2, the third end Ts3, the fourth end Ts4, the fifth end Ts5 and the sixth end Ts6. The third wiring 77C is, for example, the source line SL. In the embodiment, the first terminal Ts1, the third terminal Ts3, the fifth terminal Ts5, and the sixth terminal Ts6 are electrically connected, and the second terminal Ts2 and the fourth terminal Ts4 are electrically connected for each polarity of the transistor. may be connected.

The fourth wiring 77D is electrically connected to the third gate Tg3, the fourth gate Tg4 and the sixth gate Tg6. The fourth wiring 77D is, for example, a word line W/R-WL2 for writing and reading.

The fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the second element 11E. In this example, this connection is made by a conductive portion 75f. The fifth wiring 77E is, for example, a write and read bit line W/R-BL1.

For example, the control section 70 is electrically connected to the first wiring 77A, the second wiring 77B, the third wiring 77C, the fourth wiring 77D, the fifth wiring 77E, the conductive section 75b and the conductive section 75f. The control unit 70 performs write operations and read operations for the first element 11E and the second element 12E.

In the magnetic device 140, readout transistors (the second transistor Tr2 and the fourth transistor Tr4) are shared by the first element 11E and the second element 12E. The number of transistors can be reduced. A magnetic device that can be densified can be provided. By sharing transistors, for example, power consumption can be reduced.

As shown in FIG. 21, in this example, the second wiring 77B, the third wiring 77C and the fourth wiring 77D extend in the Y-axis direction. The second transistor Tr2 is between the first transistor Tr1 and the fifth transistor Tr5 in the Y-axis direction. The fourth transistor Tr4 is between the third transistor Tr3 and the sixth transistor Tr6 in the Y-axis direction. The first gate Tg1, the second gate Tg2, and the fifth gate Tg5 overlap the second wiring 77B in the Z-axis direction. The third gate Tg3, fourth gate Tg4, and sixth gate Tg6 overlap the fourth wiring 77D in the Z-axis direction.

As shown in FIG. 22, in this example, the first conductive member 21 of the first element 11E overlaps the first transistor Tr1 and the third transistor Tr3 in the Z-axis direction. In this example, the first conductive member 21 of the second element 12E overlaps the fifth transistor Tr5 and the sixth transistor Tr6 in the Z-axis direction. The first stacked body S1 of the first element 11E overlaps the first gate Tg1 in the Z-axis direction. The second stacked body S2 of the first element 11E overlaps the third gate Tg3 in the Z-axis direction. The first stacked body S1 of the second element 12E overlaps the fifth gate Tg5 in the Z-axis direction. The second stacked body S2 of the second element 12E overlaps the sixth gate Tg6 in the Z-axis direction.

As shown in FIG. 23, the first connection member CN1 overlaps the first magnetic layer 11 of the first element 11E, the second other end Td2, and the first magnetic layer 11 of the second element 12E in the Z-axis direction. . The second connection member CN2 overlaps the second magnetic layer 12 of the first element 11E, the fourth other end Td4, and the second magnetic layer 12 of the second element 12E in the Z-axis direction. In embodiments, at least one of the second transistor Tr2 and the fourth transistor Tr4 may include a region that does not overlap with the first conductive member 21 .

As shown in FIG. 24, the first wiring 77A and the fifth wiring 77E extend along the X-axis direction.

FIG. 25 is a schematic perspective view illustrating the magnetic device according to the fourth embodiment;
26 to 29 are schematic plan views illustrating the magnetic device according to the fourth embodiment.
26-29 correspond to plan views of each layer of the magnetic device.

As shown in FIG. 25, the magnetic device 141 according to the embodiment is provided with a third element 13E in addition to the first element 11E and the second element 12E described with respect to the magnetic device 141 . A fourth element 14E, a fifth element 15E and a sixth element 16E may also be provided. The configuration of the first element 11E and the second element 12E in the magnetic device 141 is the same as the configuration of the first element 11E and the second element 12E in the magnetic device 140 .

The magnetic device 141 includes a third element 13E, a seventh transistor Tr7, an eighth transistor Tr8, a ninth transistor Tr9, a sixth wiring 77F, a seventh wiring 77G, an eighth wiring 77H and a ninth wiring 77I.

As shown in FIGS. 25 and 26, the seventh transistor Tr7 includes a seventh terminal Ts7, a seventh other terminal Td7, and a seventh gate Tg7, and is of the first conductivity type (for example, n-type). The eighth transistor Tr8 includes an eighth terminal Ts8, an eighth other terminal Td8 and an eighth gate Tg8, and is of the second conductivity type (for example, p-type). The ninth transistor Tr9 includes a ninth terminal Ts9, a ninth other terminal Td9, and a ninth gate Tg9, and is of the second conductivity type (for example, p-type).

As shown in FIG. 25, the second element 13E includes a first conductive member 21, a first laminate S1, and a second laminate S2. The fourth portion 21d of the first conductive member 21 of the first element 11E is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E. The fourth portion 21d of the first conductive member 21 of the first element 11E may be continuous with the first portion 21a of the first conductive member 21 of the third element 13E. The boundary between the fourth portion 21d of the first conductive member 21 of the first element 11E and the first portion 21a of the first conductive member 21 of the third element 13E may be clear or unclear.

As shown in FIG. 25, the seventh other end Td7 is electrically connected to the fourth portion 21d of the first conductive member 21 of the third element 13E. The eighth other end Td8 is electrically connected to the first magnetic layer 11 of the third element 13E. In this example, this connection is made by the third connection member CN3. The ninth other end Td9 is electrically connected to the second magnetic layer 12 of the third element 13E. In this example, this connection is made by the fourth connecting member CN4.

The sixth wiring 77F is electrically connected to the eighth gate Tg8. The sixth wiring 77F is, for example, a word line W/R-WL3 for writing and reading. The seventh wiring 77G is electrically connected to the seventh gate Tg7 and the ninth gate Tg9. The seventh wiring 77G is, for example, a word line W/R-WL4 for writing and reading. The eighth wiring 77H is electrically connected to the seventh end Ts7, the eighth end Ts8 and the ninth end Ts9. The eighth wiring 77H is, for example, the source line SL2. The third wiring 77C is, for example, the source line SL1. The ninth wiring 77I is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E. In this example, this connection is made by a conductive portion 75g.

In the magnetic device 141, the potential of the first portion 21a of the first conductive member 21 of the third element 13E is controlled by the third transistor Tr3. A third transistor Tr3 is shared by the first element 11E and the third element 13E. The number of transistors can be reduced. A magnetic device that can be densified can be provided. By sharing transistors, for example, power consumption can be reduced.

As shown in FIG. 26, the fifth wiring 77F, the seventh wiring 77G and the eighth wiring 77H extend along the Y-axis direction. In this example, the positions of the fifth transistor Tr5 and the sixth transistor Tr6 in the Y-axis direction are the positions of the second transistor Tr2 and the fourth transistor Tr4 in the Y-axis direction, and the positions of the eighth transistor Tr8 and the ninth transistor Tr9 in the Y-axis direction. between a position in a direction and In this example, the third transistor Tr3 is between the first transistor Tr1 and the seventh transistor Tr7 in the X-axis direction.

In the Z-axis direction, the eighth gate Tg8 overlaps the sixth wiring 77F. The seventh gate Tg7 and the ninth gate Tg9 overlap the seventh wiring 77G. The seventh end Ts7, the eighth end Ts8, and the ninth end Ts9 overlap the eighth wiring 77H.

As shown in FIG. 27, the first stacked body S1 of the third element 13E overlaps the sixth wiring 77F in the Z-axis direction. The second stacked body S2 of the third element 13E overlaps the seventh wiring 77G in the Z-axis direction.

As shown in FIG. 28, the third connection member CN3 overlaps the first magnetic layer 11 of the third element 13E and the eighth other end Td8 in the Z-axis direction. The fourth connection member CN4 overlaps the second magnetic layer 12 of the third element 13E and the ninth other end Td9 in the Z-axis direction.

As shown in FIG. 29, a first wiring 77A (bit line W/R-BL1 for writing and reading), a fifth wiring 77E (bit line W/R-BL2 for writing and reading), and a 9 wirings 77I (bit lines W/R-BL3 for write and read) extend along the X-axis direction.

As shown in FIG. 25, the magnetic device 141 may further include other elements (eg, fourth element 14E, fifth element 15E and sixth element 16E, etc.). The fourth element 14E may have, for example, the same configuration as the third element 13E. The fifth element 15E may have, for example, the same configuration as the second element 12E. The sixth element 16E may have, for example, the same configuration as the third element 13E.

The second portion 21b of the first conductive member 21 of the fourth element 14E is electrically connected to the write and read word lines W/R-WL4 by the conductive portion 75h. A fourth portion 21d of the first conductive member 21 of the fourth element 14E is electrically connected to the tenth transistor Tr10.

The second portion 21b of the first conductive member 21 of the fifth element 15E is electrically connected to the write and read word lines W/R-WL5 by the conductive portion 75i. The first portion 21a of the first conductive member 21 of the fifth element 15E is electrically connected to the eleventh transistor Tr11. A fourth portion 21d of the first conductive member 21 of the fifth element 15E is electrically connected to the twelfth transistor Tr12.

The second portion 21b of the first conductive member 21 of the sixth element 16E is electrically connected to the write and read word lines W/R-WL6 by the conductive portion 75j. A fourth portion 21d of the first conductive member 21 of the sixth element 16E is electrically connected to the thirteenth transistor Tr13.

The tenth transistor Tr10, the eleventh transistor Tr11, the twelfth transistor Tr12, and the thirteenth transistor Tr13 are, for example, n-type.

The second wiring 77B is electrically connected to the first gate Tg1, the second gate Tg2, the fifth gate Tg5, and the gate of the eleventh transistor Tr11. The third wiring 77C includes a first end Ts1, a second end Ts2, a third end Ts3, a fourth end Ts4, a fifth end Ts5, a sixth end Ts6, an end (source) of the eleventh transistor Tr11, and a twelfth end. It is electrically connected to the end (source) of the transistor Tr12. The fourth wiring 77D is electrically connected to the third gate Tg3, the fourth gate Tg4, the sixth gate Tg6, and the gate of the twelfth transistor Tr12. The seventh wiring 77G is electrically connected to the seventh gate Tg7, the ninth gate Tg9, the gate of the tenth transistor Tr10, and the gate of the thirteenth transistor Tr13. The eighth wiring 77H is electrically connected to the seventh terminal Ts7, the eighth terminal Ts8, the ninth terminal Ts9, the terminal (source) of the tenth transistor Tr10, and the terminal (source) of the thirteenth transistor Tr13.

As shown in FIG. 29, write and read bit lines W/R-BL4 are provided corresponding to the fourth element 14E. A bit line W/R-BL5 for writing and reading is provided corresponding to the fifth element 15E. A write and read bit line W/R-BL6 is provided corresponding to the sixth element 16E. These bit lines extend along the X-axis direction.

FIG. 30 is a schematic plan view illustrating the magnetic device according to the fourth embodiment;
As shown in FIG. 30, in the magnetic device 142 according to the embodiment, a seventh element 17E and an eighth element 18E are provided in addition to the first to sixth elements 11E to 16E. A write and read bit line W/R-BL7 is provided corresponding to the seventh element 17E. A write and read bit line W/R-BL8 is provided corresponding to the eighth element 18E. These bit lines extend along the X-axis direction. Any number of elements may be provided in the magnetic device.

(Fifth embodiment)
FIG. 31 is a schematic perspective view illustrating the magnetic device according to the fifth embodiment;
As shown in FIG. 31, the magnetic device 150 according to the embodiment includes a first element 11E, a second element 12E, first to seventh transistors Tr1 to Tr7, and first to eighth wirings 77A to 77H.

The first transistor Tr1 includes a first end Ts1, a first other end Td1, and a first gate Tg1, and is of a first conductivity type (for example, n-type). The second transistor Tr2 includes a second end Ts2, a second other end Td2, and a second gate Tg2, and is of the second conductivity type (for example, p-type). The third transistor Tr3 includes a third terminal Ts3, a third other terminal Td3, and a third gate Tg3, and is of the first conductivity type. The fourth transistor Tr4 includes a fourth terminal Ts4, a fourth other terminal Td4 and a fourth gate Tg4, and is of the second conductivity type. The fifth transistor Tr5 includes a fifth terminal Ts5, a fifth other terminal Td5, and a fifth gate Tg5, and is of the first conductivity type. The sixth transistor Tr6 includes a sixth terminal Ts6, a sixth other terminal Td6 and a sixth gate Tg6, and is of the second conductivity type. The seventh transistor Tr7 includes a seventh terminal Ts7, a seventh other terminal Td7, and a seventh gate Tg7, and is of the second conductivity type.

Each of the first element 11E and the second element 12E includes a first conductive member 21, a first laminate S1 and a second laminate S2. For the first conductive member 21, the first stacked body S1, and the second stacked body S2 in the magnetic device 150, the configurations related to them that have already been described may be applied.

The fourth portion 21d of the first conductive member 21 of the first element 11E is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E. Also in this example, the fourth portion 21d of the first conductive member 21 of the first element 11E may be continuous with the first portion 21a of the first conductive member 21 of the third element 13E. The boundary between the fourth portion 21d of the first conductive member 21 of the first element 11E and the first portion 21a of the first conductive member 21 of the third element 13E may be clear or unclear.

The first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. The second other end Td2 is electrically connected to the first magnetic layer 11 of the first element 11E. The third other end Td3 is electrically connected to the fourth portion 21d of the first conductive member 21 of the first element 11E and the first portion 21a of the first conductive member 21 of the second element 12E. The fourth other end Td4 is electrically connected to the second magnetic layer 12 of the first element 11E.

The fifth other end Td5 is electrically connected to the fourth portion 21d of the first conductive member 21 of the second element 12E. The sixth other end Td6 is electrically connected to the first magnetic layer 11 of the second element 12E. The seventh other end Td7 is electrically connected to the second magnetic layer 12 of the second element 12E.

The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first end Ts1, the second end Ts2, the third end Ts3 and the fourth end Ts4. The fourth wiring 77D is electrically connected to the third gate Tg3 and the fourth gate Tg4. The fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the second element 12E.

The sixth wiring 77F is electrically connected to the sixth gate Tg6. The seventh wiring 77G is electrically connected to the fifth gate Tg5 and the seventh gate Tg7. The eighth wiring 77H is electrically connected to the fifth end Ts5, the sixth end Ts6 and the seventh end Ts7.

In the magnetic device 150, the potential of the first portion 21a of the first conductive member 21 of the third element 13E is controlled by the third transistor Tr3. A third transistor Tr3 is shared by the first element 11E and the third element 13E. The number of transistors can be reduced. A magnetic device that can be densified can be provided. By sharing transistors, for example, power consumption can be reduced.

The configuration described for the magnetic device 141 may be applied to the configuration of each layer of elements included in the magnetic device 150 .

(Sixth embodiment)
FIG. 32 is a schematic perspective view illustrating the magnetic device according to the sixth embodiment;
33 to 37 are schematic plan views illustrating the magnetic device according to the sixth embodiment.
33-37 correspond to plan views of each layer of the magnetic device.

As shown in FIG. 32, the magnetic device 160 according to the embodiment includes a first element 11E, a second element 12E, a third element 13E, a first transistor Tr1, a second transistor Tr2, a third transistor Tr4, and a first wiring 77A. , a second wiring 77B, a third wiring 77C, a fourth wiring 77D, a fifth wiring 77E, and a sixth wiring 77F.

As shown in FIGS. 32 and 33, the first transistor Tr3 includes a first end Ts1, a first other end Td1, and a first gate Tg1, and is of a first conductivity type (for example, n-type). The second transistor Tr2 includes a second end Ts2, a second other end Td3, and a second gate Tg2, and is of the second conductivity type (for example, p-type). The third transistor Tr3 includes a third terminal Ts3, a third other terminal Td3, and a third gate Tg3, and is of the first conductivity type. The fourth transistor Tr4 includes a fourth terminal Ts4, a fourth other terminal Td4 and a fourth gate Tg4, and is of the second conductivity type.

At least part of the first end Ts1 may overlap at least part of the third end Ts3. At least part of the second end Ts2 may overlap at least part of the fourth end Ts4. The first end Ts1 may be substantially the same as the third end Ts3. The second end Ts2 may be substantially the same as the fourth end Ts4.

Each of the first element 11E, the second element 12E and the third element 13E includes a first conductive member 21, a first laminate S1 and a second laminate S2. For the first conductive member 21, the first stacked body S1, and the second stacked body S2 in the magnetic device 160, the configurations related to them that have already been described may be applied.

The first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E and the first portion 21a of the first conductive member 21 of the third element 13E. In this example, this connection is made, for example, by conductive portion 75a and conductive portion 75d.

The second other end Td2 is electrically connected to the first magnetic layer 11 of the first element 11E and the first magnetic layer 11 of the second element 12E. In this example, this connection is made by the first connecting member CN1.

The third other end Td3 is electrically connected to the fourth portion 21d of the first conductive member 21 of the first element 11E and the fourth portion 21d of the first conductive member 21 of the third element 13E. In this example, this connection is made by conductive portion 75c and conductive portion 75e.

The fourth other end Td4 is electrically connected to the second magnetic layer 12 of the first element 11E and the second magnetic layer 12 of the second element 12E. In this example, this connection is made by the second connecting member CN2.

The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first end Ts1, the second end Ts2, the third end Ts3 and the fourth end Ts4. The fourth wiring 77D is electrically connected to the third gate Tg3 and the fourth gate Tg4. The first wiring 77A is, for example, a write and read bit line W/R-BL1.

The fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the second element 12E. In this example, this connection is made by a conductive portion 75h. The fifth wiring 77E is, for example, a write and read bit line W/R-BL2.

The sixth wiring 77F is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E. In this example, this connection is made by a conductive portion 75i. The sixth wiring 77F is, for example, a write and read bit line W/R-BL3.

In the magnetic device 160, the first transistor Tr1 changes the potential of the first portion 21a of the first conductive member 21 of the first element 11E and the potential of the first portion 21a of the first conductive member 21 of the third element 13E. You can control it. The third transistor Tr3 can control the potential of the fourth portion 21d of the first conductive member 21 of the first element 11E and the potential of the fourth portion 21d of the first conductive member 21 of the third element 13E. The first transistor Tr1 and the third transistor Tr3 are shared by the first element 11E and the third element 13E.

The second transistor Tr2 can control the potential of the first magnetic layer 11 of the first element 11E and the potential of the first magnetic layer 11 of the second element 12E. The fourth transistor Tr4 can control the potential of the second magnetic layer 12 of the first element 11E and the potential of the second magnetic layer 12 of the second element 12E. The second transistor Tr2 and the fourth transistor Tr4 are shared by the first element 11E and the second element 12E. The number of transistors can be reduced. A magnetic device that can be densified can be provided. By sharing transistors, for example, power consumption can be reduced.

As shown in FIG. 34, the conductive portion 75a and the conductive portion 75d may be continuous with each other. The conductive portion 75c and the conductive portion 75e may be continuous with each other.

As shown in FIGS. 33 and 35, a transistor Tn is provided for the second element 12E. The transistor Tn is of the first conductivity type. A transistor Tp is provided for the third element 13E. The transistor Tp is of the second conductivity type.

As shown in FIG. 35, for example, the length of the first stacked body S1 in the X-axis direction is longer than the length of the first stacked body S1 in the Y-axis direction. For example, the length of the second stacked body S2 in the X-axis direction is longer than the length of the second stacked body S2 in the Y-axis direction. For example, in each of the first element 11E, the second element 11E, and the third element 13E, the magnetization 11 om of the first opposing magnetic layer 11o and the magnetization 12 om of the second opposing magnetic layer 12o are in the steady state in the Y-axis direction. along the

As shown in FIG. 36, for example, the length of the first connection member CN1 in the Y-axis direction is longer than the length of the first connection member CN1 in the X-axis direction. For example, the length of the second connection member CN2 in the Y-axis direction is longer than the length of the second connection member CN2 in the X-axis direction. A third connection member CN3 and a fourth connection member CN4 for the third element 13E may be provided.

As shown in FIG. 37, a first wiring 77A (bit line W/R-BL1 for writing and reading), a fifth wiring 77E (bit line W/R-BL2 for writing and reading), and a Six wirings 77F (bit lines W/R-BL3 for write and read) extend along the X-axis direction.

(Seventh embodiment)
38, 39(a) and 39(b) are schematic diagrams illustrating the magnetic device according to the seventh embodiment.
As shown in FIG. 38, the magnetic device 170 according to the embodiment includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, a first wiring 77A, a second wiring 77B, and a third wiring 77C. and a fourth wiring 77D. The first transistor Tr1 includes a first end Ts1, a first other end Td1, and a first gate Tg1. The first transistor Tr1 is a first conductivity type (for example, p-type) transistor. The second transistor Tr2 includes a second end Ts2, a second other end Td2 and a second gate Tg2. The second transistor Tr2 is a second conductivity type (for example, p-type) transistor.

As shown in FIGS. 39(a) and 39(b), each of the first element 11E and the second element 12E includes a first conductive member 21, a first stacked body S1 and a first diode DE1. The first conductive member 21 includes a first portion 21a, a second portion 21b, and a third portion 21c. There is a third portion 21c between the first portion 21a and the second portion 21b. The first stacked body S1 includes a first magnetic layer 11 and a first opposing magnetic layer 11o. The first opposing magnetic layer 11 o is provided between the third portion 21 c and the first magnetic layer 11 . In this example, a first non-magnetic layer 11n is provided between the first opposing magnetic layer 11o and the first magnetic layer 11o.

One of the anode DA1 and cathode DC1 of the first diode DE1 is electrically connected to the first magnetic layer 11 . One of the anode DA1 and the cathode DC1 is hereinafter referred to as the anode DA1. The anode DA1 is laminated with, for example, the first laminate S1. The anode DA1 is in contact with, for example, the first stack S1.

As shown in FIG. 38, the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. The second other end Td2 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E.

The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E and the second portion 21b of the first conductive member 21 of the second element 12E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first end Ts1 and the second end Ts2.

As shown in FIG. 38, the fourth wiring 77D connects the other of the anode DA1 and cathode DC1 of the first diode DE1 of the first element 11E and the other of the anode DA1 and cathode DC1 of the first diode DE1 of the second element 12E. is electrically connected to

The first wiring 77A is, for example, the write bit line WBL1. The second wiring 77B is, for example, the word line WL. The third wiring 77C is, for example, the source line SL. The fourth wiring 77D is, for example, the read bit line RBL1.

Hereinafter, one of the anode DA1 and the cathode DC1 will be referred to as the anode DA1, and the other of the anode DA1 and the cathode DC1 will be referred to as the cathode DC1.

In embodiments, one of the anode DA1 and the cathode DC1 may be the cathode DC1, and the other of the anode DA1 and the cathode DC1 may be the anode DA1. When one of the anode DA1 and the cathode DC1 is the cathode DC1 and the other of the anode DA1 and the cathode DC1 is the anode DA1, the polarity of the voltage applied to the read bit line is such that one of the anode DA1 and the cathode DC1 is the anode DA1. , the polarity of the voltage applied to the read bit line is opposite to that when the other of the anode DA1 and the cathode DC1 is the cathode DC1.

40, 41(a) and 41(b) are schematic diagrams illustrating the magnetic device according to the seventh embodiment.
FIG. 41(a) is a plan view corresponding to the XY plane including transistors. 41(b) is a plan view corresponding to the XY plane including the first conductive member 21. FIG.

As shown in FIG. 40, the first portion 21a of the first element 11E is connected to the first other end Td1. As shown in FIGS. 41A and 41B, at least part of the first conductive member 21 of the first element 11E overlaps the first transistor Tr1 in the second direction (eg, Z-axis direction). . The second direction intersects with the first direction (X-axis direction) from the first portion 21a to the second portion 21b.

As shown in FIG. 40, the first portion 21a of the second element 12E is connected to the second other end Td2. As shown in FIGS. 41A and 41B, at least part of the first conductive member 21 of the second element 12E overlaps the second transistor Tr2 in the second direction (eg, Z-axis direction). .

42(a) to 42(d) are schematic diagrams illustrating the magnetic device according to the seventh embodiment.
These figures illustrate the operation in the magnetic device 170. FIG.

As shown in FIG. 42A, in the write operation to the first element 11E, the write bit line WBL1 is turned "ON", the read bit line RBL1 is turned "OFF", and the word line WL is turned "OFF". , is set to "ON". A write current wc1 flows through the first conductive member 21 of the first element 11E and the first transistor Tr1.

As shown in FIG. 42(b), in the write operation to the second element 12E, the write bit line WBL1 is turned "ON", the read bit line RBL1 is turned "OFF", and the word line WL is turned "OFF". , "OFF". A write current wc2 flows through the first conductive member 21 and the second transistor Tr2 of the second element 11E.

As shown in FIG. 42(c), in the read operation of the first element 11E, the write bit line WBL1 is turned "OFF", the read bit line RBL1 is turned "ON", and the word line WL is turned "OFF". "ON". A read current rc1 flows through the first transistor Tr1 and the first element 11E (the first stacked body S1 and the first diode DE1).

As shown in FIG. 42(d), in the read operation of the second element 12E, the write bit line WBL1 is turned "OFF", the read bit line RBL1 is turned "ON", and the word line WL is turned "OFF". It is set to "OFF". A read current rc2 flows through the second transistor Tr2 and the second element 12E (the first stacked body S1 and the first diode DE1).

43, 44(a) and 44(b) are schematic diagrams illustrating the magnetic device according to the seventh embodiment.
As shown in FIG. 43, the magnetic device 171 according to the embodiment includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, a first wiring 77A, a second wiring 77B, and a third wiring 77C. And in addition to the fourth wiring 77D, the third element 13E, the fourth element 14E, the third transistor Tr3, the fourth transistor Tr4, the fifth wiring 77E, the sixth wiring 77F and the seventh wiring 77G are included. The configuration of the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, the first wiring 77A, the second wiring 77B, the third wiring 77C, and the fourth wiring 77D in the magnetic device 171 is similar to that of the magnetic device. Similar to that in 170.

The third transistor Tr3 includes a third terminal Ts3, a third other terminal Td3, and a third gate Tg3. The third transistor Tr3 is a first conductivity type (for example, n type) transistor. The fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4 and a fourth gate Tg4. The fourth transistor Tr4 is a second conductivity type (for example, p-type) transistor.

As shown in FIGS. 44(a) and 44(b), each of the third element 13E and the fourth element 14E includes the first conductive member 21, the first stacked body S1 and the first diode DE1 described above. .

As shown in FIG. 43, the third other end Td3 is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E. The fourth other end Td4 is electrically connected to the first portion 21a of the first conductive member 21 of the fourth element 14E.

The fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E and the second portion 21b of the first conductive member 21 of the fourth element 14E. The sixth wiring 77F is electrically connected to the third gate Tg3 and the fourth gate Tg4. The third wiring 77C is further electrically connected to the third end Ts3 and the fourth end Ts4. The seventh wiring 77G is electrically connected to the other of the anode DA1 and cathode DC1 of the first diode DE1 of the third element 13E and the other of the anode DA1 and cathode DC1 of the first diode DE1 of the fourth element 14E. . For example, the other of anode DA1 and cathode DC1 is cathode DC1.

The second wiring 77B is, for example, the word line WL1. The fifth wiring 77E is, for example, the write bit line WBL2. The sixth wiring 77F is, for example, the word line WL2. The seventh wiring 77G is, for example, the read bit line RBL2.

Similar operations to magnetic device 170 can be performed in magnetic device 171 .

45(a) to 45(c) are schematic diagrams illustrating the magnetic device according to the seventh embodiment.
FIG. 45(a) is a plan view corresponding to the XY plane including transistors. 45(b) is a plan view corresponding to the XY plane including the first conductive member 21. FIG.

As shown in FIGS. 45A and 45B, at least part of the first conductive member 21 of the first element 11E overlaps the first transistor Tr1 in the second direction (eg, Z-axis direction). . The second direction intersects with the first direction (X-axis direction) from the first portion 21a to the second portion 21b. At least part of the first conductive member 21 of the second element 12E overlaps the second transistor Tr2 in the second direction (eg, Z-axis direction).

As shown in FIGS. 45A and 45C, at least part of the first conductive member 21 of the third element 13E overlaps the third transistor Tr3 in the second direction (eg, Z-axis direction). . At least part of the first conductive member 21 of the fourth element 14E overlaps the fourth transistor Tr4 in the second direction (eg, Z-axis direction).

FIG. 46 is a schematic diagram illustrating a magnetic device according to the seventh embodiment;
As shown in FIG. 46, the magnetic device 172 according to the embodiment also includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, a first wiring 77A, a second wiring 77B, and a third wiring 77C. and a fourth wiring 77D. Also in this example, the first transistor Tr1 is a first conductivity type transistor, and the second transistor Tr2 is a second conductivity type transistor. One of the anode DA1 and cathode DC1 (for example, anode DA1) of the first diode DE1 is electrically connected to the first magnetic layer 11 (see FIGS. 39(a) and 39(b)). In the following, regarding the example of the configuration of the magnetic device 172, the description of the same parts as the configuration of the magnetic device 170 will be omitted as appropriate.

The first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E and the other of the anode DA1 and the cathode DC1 (for example, the cathode DC1) of the first diode DE1 of the second element 12E. connected to The second other end Td2 is electrically connected to the other of the anode DA1 and cathode DC1 (for example, cathode DC1) of the first diode DE1 of the first element 11E and the first portion 21a of the first conductive member 21 of the second element 12E. connected to

The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first end Ts1 and the second end Ts2. The fourth wiring 77D is electrically connected to the second portion 21b of the first conductive member 21 of the second element 12E.

The first wiring 77A is, for example, the bit line BL1. The second wiring 77B is, for example, the word line WL. The third wiring 77C is, for example, the source line SL. The fourth wiring 77D is, for example, the bit line BL2.

In the magnetic device 172, the read current of one element flows through the first conductive member 21 of the other element.

(Eighth embodiment)
FIG. 47 is a schematic diagram illustrating a magnetic device according to the eighth embodiment;
As shown in FIG. 47, the magnetic device 180 according to the embodiment includes first to fourth elements 11E to 14E, first to fourth transistors Tr1 to Tr4, and first to eleventh wirings 77A to 77K. The first transistor Tr1 includes a first end Ts1, a first other end Td1, and a first gate Tg1. The second transistor Tr2 includes a second end Ts2, a second other end Td2 and a second gate Tg2. The third transistor Tr3 includes a third terminal Ts3, a third other terminal Td3, and a third gate Tg1. The fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4 and a fourth gate Tg4. In the eighth embodiment, the conductivity type of the second transistor Tr2 may be the same as or different from the conductivity type of the first transistor Tr1. In the eighth embodiment, the conductivity type of the fourth transistor Tr4 may be the same as or different from that of the third transistor Tr3. Hereinafter, the first to fourth transistors Tr1 to Tr4 are transistors of the first conductivity type (eg, n-type).

Also in the magnetic device 180, each of the first element 11E, the second element 12E, the third element 13E, and the fourth element 14E includes the first conductive member 21, the first stack S1, and the first diode DE1 described above. (See FIGS. 39(a), 39(b), 44(a) and 44(b)). One of the anode DA1 and cathode DC1 (for example, the anode DA1) of the first diode DE1 is electrically connected to the first magnetic layer 11 .

As shown in FIG. 47, the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. The second other end Td2 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E. The third other end Td3 is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E. The fourth other end Td4 is electrically connected to the first portion 21a of the first conductive member 21 of the fourth element 14E.

The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first end Ts1, the second end Ts2, the third end Ts3 and the fourth end Ts4. The fourth wiring 77D is electrically connected to the other of the anode DA1 and the cathode DC1 (for example, the cathode DC1) of the first diode DE1 of the first element 11E.

The fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the second element 12E. The sixth wiring 77F is electrically connected to the third gate Tg3 and the fourth gate Tg4. The seventh wiring 77G is electrically connected to the other (eg, cathode DC1) of the anode DA1 and cathode DC1 of the first diode DE1 of the second element 12E. The eighth wiring 77H is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E. The ninth wiring 77I is electrically connected to the other (eg, cathode DC1) of the anode DA1 and cathode DC1 of the first diode DE1 of the third element 13E. The tenth wiring 77J is electrically connected to the second portion 21b of the first conductive member 21 of the fourth element 14E. The eleventh wiring 77K is electrically connected to the other (for example, the cathode DC1) of the anode DA1 and the cathode DC1 of the first diode DE1 of the fourth element 14E.

The first wiring 77A is, for example, the write bit line WBL1. The second wiring 77B is, for example, the word line WL1. The third wiring 77C is, for example, the source line SL. The fourth wiring 77D is, for example, the read bit line RBL1. The fifth wiring 77E is, for example, the write bit line WBL2. The sixth wiring 77F is, for example, the word line WL2. The seventh wiring 77G is, for example, the write bit line WBL2. The eighth wiring 77H is, for example, the write bit line WBL3. The ninth wiring 77I is, for example, the read bit line RBL3. The tenth wiring 77J is, for example, the write bit line WBL4. The eleventh wiring 77K is, for example, a read bit line RBL4.

48 and 49(a) to 49(e) are schematic diagrams illustrating the magnetic device according to the eighth embodiment.
FIG. 49(a) is a plan view corresponding to the XY plane including transistors. FIG. 49(b) is a plan view corresponding to the XY plane including the first conductive members 21 of the first element 11E and the second element 12E. FIG. 49(c) is a plan view corresponding to the XY plane including the first conductive members 21 of the third element 13E and the fourth element 14E. FIG. 49(d) is a cross-sectional view along the ZY plane including the first element 11E and the second element 12E. FIG. 49(e) is a cross-sectional view along the ZY plane including the third element 13E and the fourth element 14E. Insulating members are omitted in these cross-sectional views.

As shown in FIG. 48, the first portion 21a of the first element 11E is connected to the first other end Td1. A first portion 21a of the second element 12E is connected to the second other end Td2. A first portion 21a of the third element 13E is connected to the third other end Td3. A first portion 21a of the fourth element 14E is connected to the fourth other end Td4.

As shown in FIGS. 49(a), 49(b), and 49(d), at least a portion (eg, the first portion 21a) of the first conductive member 21 of the first element 11E extends in the second direction (eg, , Z-axis direction), it overlaps with the first transistor Tr1. The second direction intersects with the first direction (X-axis direction) from the first portion 21a to the second portion 21b. At least part of the first conductive member 21 (for example, the first portion 21a) of the second element 12E overlaps the second transistor Tr2 in the second direction (for example, the Z-axis direction).

As shown in FIGS. 49(a), 49(c) and 49(e), at least part of the first conductive member 21 (for example, the first portion 21a) of the third element 13E extends in the second direction (for example, , Z-axis direction), it overlaps with the third transistor Tr3. At least part of the first conductive member 21 (for example, the first portion 21a) of the fourth element 14E overlaps the fourth transistor Tr4 in the second direction (for example, the Z-axis direction).

The direction from the first transistor Tr1 to the third transistor Tr3 is along the first direction (for example, the X-axis direction). The direction from the second transistor Tr2 to the fourth transistor Tr4 is along the first direction. The direction from the second transistor Tr2 to the first transistor Tr1 includes a third direction component. The third direction intersects a plane containing the first direction and the second direction. The third direction is, for example, the Y-axis direction. The direction from the fourth transistor Tr4 to the third transistor Tr3 includes a third direction component.

As shown in FIGS. 49(d) and 49(e), the position of the first element 11E in the second direction (Z-axis direction) is the position of the first transistor Tr1 in the second direction and the position of the third element 13E. and a position in the second direction. The position of the first element 11E in the second direction is between the position of the first transistor Tr1 in the second direction and the position of the fourth element 14E in the second direction. The position of the second element 12E in the second direction is between the position of the second transistor Tr2 in the second direction and the position of the third element 13E in the second direction. The position of the second element 12E in the second direction is between the position of the second transistor Tr2 in the second direction and the position of the fourth element 14E in the second direction. The position in the second direction corresponds to the position in the height direction, for example.

50 and 51(a) to 51(e) are schematic diagrams illustrating the magnetic device according to the eighth embodiment.
FIG. 50 is a schematic diagram illustrating the magnetic device 181 according to the embodiment. The placement of elements in magnetic device 181 is different than the placement of elements in magnetic device 180 . Other configurations of the magnetic device 181 are similar to those of the magnetic device 180 . An example of arrangement of elements in the magnetic device 181 will be described below.

FIG. 51(a) is a plan view corresponding to the XY plane including transistors. FIG. 51(b) is a plan view corresponding to the XY plane including the first conductive members 21 of the first element 11E and the second element 12E. FIG. 51(c) is a plan view corresponding to the XY plane including the first conductive members 21 of the third element 13E and the fourth element 14E. FIG. 51(d) is a cross-sectional view along the ZY plane including the first element 11E and the third element 13E. FIG. 51(e) is a cross-sectional view along the ZY plane including the second element 12E and the fourth element 14E. Insulating members are omitted in these cross-sectional views.

As shown in FIGS. 51(a), 51(b), and 51(d), at least a portion (eg, the first portion 21a) of the first conductive member 21 of the first element 11E extends in the second direction (eg, , Z-axis direction), it overlaps with the first transistor Tr1. As shown in FIG. 51(e), at least part of the first conductive member 21 (for example, the first portion 21a) of the second element 12E overlaps the second transistor Tr2 in the second direction.

As shown in FIGS. 51(a), 51(c), and 51(d), at least part of the first conductive member 21 (for example, the first portion 21a) of the third element 13E is, in the second direction, It overlaps with the third transistor Tr3. As shown in FIG. 51(e), at least part of the first conductive member 21 (for example, the first portion 21a) of the fourth element 14E overlaps the fourth transistor Tr4 in the second direction.

The direction from the first transistor Tr1 to the fourth transistor Tr4 is along the first direction (X-axis direction). The direction from the third transistor Tr3 to the second transistor Tr2 is along the first direction. The direction from the third transistor Tr3 to the first transistor Tr1 includes a third direction component. The third direction intersects a plane containing the first direction and the second direction. The third direction is, for example, the Y-axis direction. The direction from the second transistor Tr2 to the fourth transistor Tr4 includes a third direction component.

As shown in FIG. 51(d), the position of the first element 11E in the second direction (for example, the Z-axis direction) is the position of the first transistor Tr1 in the second direction and the position of the third element 13E in the second direction. and between. As shown in FIG. 51(e), the position of the second element 12E in the second direction is between the position of the second transistor Tr2 in the second direction and the position of the fourth element 14E in the second direction. .

In the magnetic device 181 , for example, it is easier to suppress interference between the densities of multiple elements than in the magnetic device 180 . For example, it is easy to increase the density of multiple elements.

52(a) and 52(b) are schematic cross sections illustrating a part of the magnetic device according to the embodiment.
As shown in FIG. 52(a), in the magnetic device 185, the first diode DE1 includes, for example, a metal silicide layer DsL. The metal silicide layer DsL includes, for example, at least one selected from the group consisting of Ni, Al, Au, Pt, Er, Co, Pd, Ti and B, and silicon. With the first diode DE1 having such a configuration, for example, high heat resistance can be obtained. The first diode DE1 corresponds, for example, to a Schottky diode.

In the embodiment, the shape of the first diode DE1 in the XY plane may be substantially the same as the shape of the first stack S1 in the XY plane. Metal silicides tend to have high stress. When the metal silicide is formed, the structure changes from that of the original material of the metal silicide. This causes a large stress. As a result, for example, the stress of the metal silicide layer DsL of the first diode DE1 is applied to the first stacked body S1. The magnetization of the magnetic layers included in the first stacked body S1 can be easily controlled by anisotropy caused by stress. For example, in the first laminate S1 to which the in-plane magnetization arrangement is applied, it is easy to obtain stable magnetization. As a result, stable operation is obtained even when the first stacked body S1 is miniaturized. For example, it becomes easier to obtain a large-capacity magnetic device. The melting points of Ni, Co, Pt and Pd are relatively close to the process temperature during formation of the first stack S1. When the metal silicide layer DsL contains these materials, it is easy to obtain a high yield.

As shown in FIG. 52(b), in the magnetic device 186, the metal silicide layer DsL of the first diode DE1 may include multiple metal layers DsL1 and multiple silicon layers DsL2. One of the plurality of metal layers DsL1 is between one of the plurality of silicon layers DsL2 and another one of the plurality of silicon layers DsL2. One of the plurality of silicon layers DsL2 is between one of the plurality of metal layers DsL1 and another one of the plurality of metal layers DsL1. A silicide is formed by the plurality of metal layers DsL1 and the plurality of silicon layers DsL2. For example, it is easy to obtain stable rectification characteristics. Thus, the first diode DE1 may comprise metal silicide. It becomes easy to obtain stable characteristics, and a magnetic device capable of high density can be provided.

The configuration of magnetic devices 185 and 186 can be applied to any magnetic device according to the seventh and eighth embodiments.

FIG. 53 is a schematic diagram illustrating a magnetic device according to an embodiment;
As shown in FIG. 53, the magnetic device 187a according to the embodiment includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, and first to sixth wirings 77A to 77F. The first transistor Tr1 includes a first end Ts1, a first other end Td1, and a first gate Tg1. The second transistor Tr2 includes a second end Ts2, a second other end Td2 and a second gate Tg2. The conductivity type of the second transistor Tr2 may be the same as or different from that of the first transistor Tr1.

Also in the magnetic device 187a, each of the first element 11E and the second element 12E includes the first conductive member 21, the first stacked body S1 and the first diode DE1 described above (FIGS. 39(a) and 39( b) see). One of the anode DA1 and cathode DC1 (for example, the anode DA1) of the first diode DE1 is electrically connected to the first magnetic layer 11 .

As shown in FIG. 53, the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. The second other end Td2 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E.

The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first end Ts1 and the second end Ts2. The fourth wiring 77D is electrically connected to the other of the anode DA1 and the cathode DC1 (for example, the cathode DC1) of the first diode DE1 of the first element 11E. The fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the second element 12E. The sixth wiring 77F is electrically connected to the other (eg, cathode DC1) of the anode DA1 and cathode DC1 of the first diode DE1 of the second element 12E.

In the magnetic device 187a, for example, the extending direction of the first wiring 77A, the third wiring 77C, the fourth wiring 77D, the fifth wiring 77E, and the sixth wiring 77F is the first extending direction Dx1 (for example, the Y-axis direction and the X-axis direction). one of the axial directions). For example, the second wiring 77B extends along a second extending direction Dx2 (for example, the other of the Y-axis direction and the X-axis direction) intersecting with the first extending direction Dx1. A plane including the first extending direction Dx1 and the second extending direction Dx2 intersects the Z-axis direction. A plane including the first extending direction Dx1 and the second extending direction Dx2 is, for example, perpendicular to the Z-axis direction.

In the magnetic device 187a, the first wiring 77A is, for example, the write bit line WBL1. The second wiring 77B is, for example, the word line WL. The third wiring 77C is, for example, the source line SL. The fourth wiring 77D is, for example, the read bit line RBL1. The fifth wiring 77E is, for example, the write bit line WBL2. The sixth wiring 77F is, for example, the read bit line RBL2.

FIG. 54 is a schematic diagram illustrating a magnetic device according to an embodiment;
As shown in FIG. 54, the magnetic device 187b according to the embodiment also includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, and first to sixth wirings 77A to 77F. . The electrical connection relationship between these elements in the magnetic device 187b is the same as the electrical connection relationship in the magnetic device 187a. The wiring extending direction in the magnetic device 187a is different from the wiring extending direction in the magnetic device 187a.

In the magnetic device 187b, for example, the first wiring 77A, the third wiring 77C, and the fifth wiring 77E extend along the first extending direction Dx1 (eg, one of the Y-axis direction and the X-axis direction). The second wiring 77B, fourth wiring 77D, and sixth wiring 77F extend along a second extending direction Dx2 (for example, the other of the Y-axis direction and the X-axis direction) intersecting with the first extending direction Dx1.

In the magnetic device 187b, the first wiring 77A is, for example, the write bit line WBL1. The second wiring 77B is, for example, the word line WL. The third wiring 77C is, for example, the source line SL. The fourth wiring 77D is, for example, the read bit line RBL1. The fifth wiring 77E is, for example, the write bit line WBL2. The sixth wiring 77F is, for example, the read bit line RBL2.

FIG. 55 is a schematic diagram illustrating a magnetic device according to an embodiment;
As shown in FIG. 55, the magnetic device 187c according to the embodiment includes the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, and the first to sixth wirings 77A to 77F. , a third element 13E, a fourth element 14E, a third transistor Tr3, a fourth transistor Tr4, and seventh to eleventh wirings 77G to 77K. In the magnetic device 187c, the configurations of the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, and the first to sixth wirings 77A to 77F are similar to those of the magnetic device 187a, for example. good. Magnetic device 187 c may be substantially similar to magnetic device 180 .

The third transistor Tr3 includes a third terminal Ts3, a third other terminal Td3, and a third gate Tg3. The fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4 and a fourth gate Tg4. The conductivity types of the third transistor Tr3 and the fourth transistor Tr4 may be the same as or different from the conductivity type of the first transistor Tr1.

Also in the magnetic device 187c, each of the third element 13E and the fourth element 14E includes the first conductive member 21, the first stacked body S1 and the first diode DE1 described above (FIGS. 44(a) and 44( b) see). One of the anode DA1 and cathode DC1 (for example, the anode DA1) of the first diode DE1 is electrically connected to the first magnetic layer 11 .

As shown in FIG. 55, the third other end Td3 is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E. The fourth other end Td4 is electrically connected to the first portion 21a of the first conductive member 21 of the fourth element 14E.

The third wiring 77C is further electrically connected to the third end Ts3 and the fourth end Ts4. The seventh wiring 77G is electrically connected to the third gate Tg3 and the fourth gate Tg4. The eighth wiring 77H is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E. The ninth wiring 77I is electrically connected to the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the third element 13E. The tenth wiring 77J is electrically connected to the second portion 21b of the first conductive member 21 of the fourth element 14E. The eleventh wiring 77K is electrically connected to the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the fourth element 14E.

In the magnetic device 187c, for example, the first wiring 77A, the third wiring 77C, the fourth wiring 77D, the fifth wiring 77E, the sixth wiring 77F, the eighth wiring 77H, the ninth wiring 77I, the tenth wiring 77J and the eleventh wiring 77K extends along the first extending direction Dx1 (eg, one of the Y-axis direction and the X-axis direction). The second wiring 77B and the seventh wiring 77G extend along a second extending direction Dx2 (for example, the other of the Y-axis direction and the X-axis direction) that intersects with the first extending direction Dx1.

In the magnetic device 187c, the first wiring 77A is, for example, the write bit line WBL1. The second wiring 77B is, for example, the word line WL1. The third wiring 77C is, for example, the source line SL. The fourth wiring 77D is, for example, the read bit line RBL1. The fifth wiring 77E is, for example, the write bit line WBL2. The sixth wiring 77F is, for example, the read bit line RBL2. The seventh wiring 77G is, for example, the word line WL2. The eighth wiring 77H is, for example, the write bit line WBL3. The ninth wiring 77I is, for example, the read bit line RBL3. The tenth wiring 77J is, for example, the write bit line WBL4. The eleventh wiring 77K is, for example, a read bit line WBL4.

FIG. 56 is a schematic diagram illustrating a magnetic device according to an embodiment;
As shown in FIG. 56, the magnetic device 187d according to the embodiment also includes first to fourth elements 11E to 14E, first to fourth transistors Tr1 to TR4, and first to eleventh wirings 77A to 77K. In the magnetic device 187d, the electrical connection relationship between transistors and wiring is similar to that in the magnetic device 187c. The wiring extending direction in the magnetic device 187d is different from the wiring extending direction in the magnetic device 187c.

In the magnetic device 187d, for example, the first wiring 77A, the third wiring 77C, the fifth wiring 77E, the eighth wiring 77H, and the tenth wiring 77J extend in the first extending direction Dx1 (for example, the Y-axis direction and the X-axis direction). one side). The second wiring 77B, the fourth wiring 77D, the sixth wiring 77F, the seventh wiring 77G, the ninth wiring 77I, and the eleventh wiring 77K are arranged in a second extending direction Dx2 (for example, Y-axis direction and the other of the X-axis directions).

In the magnetic device 187d, the first wiring 77A is, for example, the write bit line WBL1. The second wiring 77B is, for example, the word line WL1. The third wiring 77C is, for example, the source line SL. The fourth wiring 77D is, for example, the read word line RWL1. The fifth wiring 77E is, for example, the write bit line WBL2. The sixth wiring 77F is, for example, a read word line RWL2. The seventh wiring 77G is, for example, the word line WL2. The eighth wiring 77H is, for example, the write bit line WBL3. The ninth wiring 77I is, for example, the read word line RWL3. The tenth wiring 77J is, for example, the write bit line WBL4. The eleventh wiring 77K is, for example, a read word line RWL4.

FIG. 57 is a schematic diagram illustrating a magnetic device according to an embodiment;
As shown in FIG. 57, in the magnetic device 187d according to the embodiment, the first portion 21a of the first element 11E is connected to the first other end Td1. A first portion 21a of the second element 12E is connected to the second other end Td2. A first portion 21a of the third element 13E is connected to the third other end Td3. A first portion 21a of the fourth element 14E is connected to the fourth other end Td4.

FIG. 58 is a schematic diagram illustrating a magnetic device according to an embodiment;
As shown in FIG. 58, the magnetic device 187e according to the embodiment includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, and first to seventh wirings 77A to 77G. The first transistor Tr1 includes a first end Ts1, a first other end Td1, and a first gate Tg1. The second transistor Tr2 includes a second end Ts2, a second other end Td2 and a second gate Tg2. The conductivity type of the second transistor Tr2 may be the same as or different from that of the first transistor Tr1.

Also in the magnetic device 187e, each of the first element 11E and the second element 12E includes the first conductive member 21, the first stacked body S1 and the first diode DE1 described above (FIGS. 39(a) and 39( b) see). One of the anode DA1 and cathode DC1 (for example, the anode DA1) of the first diode DE1 is electrically connected to the first magnetic layer 11 .

As shown in FIG. 58, the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. The second other end Td2 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E.

The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E and the second portion 21b of the first conductive member 21 of the second element 12E. The second wiring 77B is electrically connected to the first gate Tg1. The third wiring 77C is electrically connected to the first end Ts1. The fourth wiring 77D is electrically connected to the other of the anode DA1 and the cathode DC1 (for example, the cathode DC1) of the first diode DE1 of the first element 11E. The fifth wiring 77E is electrically connected to the second gate Tg2. The sixth wiring 77F is electrically connected to the second end Ts2. The seventh wiring 77G is electrically connected to the other (eg, cathode DC1) of the anode DA1 and cathode DC1 of the first diode DE1 of the second element 12E.

In the magnetic device 187e, the first wiring 77A, the third wiring 77C, and the sixth wiring 77F extend along the first extension direction Dx1 (eg, one of the Y-axis direction and the X-axis direction). For example, the second wiring 77B, the fourth wiring 77D, the fifth wiring 77E, and the seventh wiring 77G are arranged in a second extending direction Dx2 (for example, the other of the Y-axis direction and the X-axis direction) that intersects the first extending direction Dx1. extends along.

In the magnetic device 187e, the first wiring 77A is, for example, the common line CL. The second wiring 77B is, for example, the word line WL1. The third wiring 77C is, for example, the source line SL1 (or the write bit line WBL1). The fourth wiring 77D is, for example, a read bit line RBL1-L. The fifth wiring 77E is, for example, the word line WL2. The sixth wiring 77F is, for example, the source line SL2 (or the write bit line WBL2). The seventh wiring 77G is, for example, a read bit line RBL1-R.

FIG. 59 is a schematic diagram illustrating a magnetic device according to an embodiment;
As shown in FIG. 59, the magnetic device 187f according to the embodiment includes, in addition to the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, and the first to seventh wirings 77A to 77G, , a third element 13E, a fourth element 14E, a third transistor Tr3, a fourth transistor Tr4, and eighth to tenth wirings 77H to 77J. In the magnetic device 187f, the configurations of the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, and the first to seventh wirings 77A to 77G are, for example, the same as those in the magnetic device 187e. good.

The third transistor Tr3 includes a third terminal Ts3, a third other terminal Td3, and a third gate Tg3. The fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4 and a fourth gate Tg4. The conductivity types of the third transistor Tr3 and the fourth transistor Tr4 may be the same as or different from the conductivity type of the first transistor Tr1.

Also in the magnetic device 187f, each of the third element 13E and the fourth element 14E includes the first conductive member 21, the first stacked body S1 and the first diode DE1 described above (FIGS. 44(a) and 44( b) see). One of the anode DA1 and cathode DC1 (for example, the anode DA1) of the first diode DE1 is electrically connected to the first magnetic layer 11 .

As shown in FIG. 59, the third other end Td3 is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E. The fourth other end Td4 is electrically connected to the first portion 21a of the first conductive member 21 of the fourth element 14E.

The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E and the second portion 21b of the first conductive member 21 of the second element 12E. Second wiring 77B is further electrically connected to third gate Tg3 in addition to first gate Tg1. The third wiring 77C is further electrically connected to the third end Ts3 in addition to the first end Ts1. The fourth wiring 77D is electrically connected to the other of the anode DA1 and the cathode DC1 (for example, the cathode DC1) of the first diode DE1 of the first element 11E. Fifth wiring 77E is further electrically connected to fourth gate Tg4 in addition to second gate Tg2. The sixth wiring 77F is further electrically connected to the fourth end Ts4 in addition to the second end Ts2. The seventh wiring 77G is electrically connected to the other (eg, cathode DC1) of the anode DA1 and cathode DC1 of the first diode DE1 of the second element 12E.

The eighth wiring 77H is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E and the second portion 21b of the first conductive member 21 of the fourth element 14E. The ninth wiring 77I is electrically connected to the other (eg, cathode DC1) of the anode DA1 and cathode DC1 of the first diode DE1 of the third element 13E. The tenth wiring 77J is electrically connected to the other (eg, cathode DC1) of the anode DA1 and cathode DC1 of the first diode DE1 of the fourth element 14E.

In the magnetic device 187f, the first wiring 77A, the third wiring 77C, the sixth wiring 77F, and the eighth wiring 77H extend along the first extension direction Dx1 (eg, one of the Y-axis direction and the X-axis direction). The second wiring 77B, the fourth wiring 77D, the fifth wiring 77E, the seventh wiring 77G, the ninth wiring 77I, and the tenth wiring 77J are arranged in a second extending direction Dx2 (for example, Y-axis direction and the other of the X-axis directions).

In the magnetic device 187f, for example, the first wiring 77A is, for example, the common line CL1. The second wiring 77B is, for example, the word line WL1. The third wiring 77C is the source line SL1 (or the write bit line WBL1). The fourth wiring 77D is, for example, a read bit line RBL1-L. The fifth wiring 77E is, for example, the word line WL2. The sixth wiring 77F is, for example, the source line SL2 (or the write bit line WBL2). The seventh wiring 77G is, for example, a read bit line RBL1-R. The eighth wiring 77H is, for example, the common line CL2. The ninth wiring 77I is, for example, a read bit line RBL2-L. The tenth wiring 77J is, for example, a read bit line RBL2-L.

60 and 61 are schematic plan views illustrating magnetic devices according to embodiments.
62 to 73 are schematic cross-sectional views illustrating magnetic devices according to embodiments.

FIG. 60 is a plan view on a plane including transistors (semiconductor regions). FIG. 61 is a plan view when some components are seen through. These planes are substantially perpendicular to the Z-axis direction. 62 to 68 correspond to lines X1-X1, X2-X2, X3-X3, X4-X4, X5-X5, X6-X6, and X7-X7 of FIGS. 60 and 61. It is a sectional view along. 69 to 73 are cross-sectional views taken along lines Y1-Y1, Y2-Y2, Y3-Y3, Y4-Y4 and Y5-Y5 in FIGS. 60 and 61. FIG.

As shown in FIGS. 62 to 73, the first to fourth transistors Tr1 to Tr4 are included in the semiconductor region 79. FIG. Semiconductor region 79 may be, for example, a semiconductor substrate. For example, on the semiconductor region 79, the first to fourth elements 11E to 14E and the first to tenth wirings 77A to 77J are provided.

As shown in FIG. 62, the third other end Td3 is electrically connected to the first conductive member 21 corresponding to the third element 13E by connecting members 78d and 78c. The eighth wiring 77H overlaps the first wiring 77A in the third direction. The third direction intersects a plane including the first extending direction Dx1 and the second extending direction Dx2. The third direction is, for example, the Z-axis direction. The positions of the first wiring 77A and the eighth wiring 77H in the second extending direction Dx2 are the position of the third wiring 77C in the second extending direction Dx2, the position of the sixth wiring 77F in the second extending direction Dx2, is between The first other end Td1 is electrically connected to the first conductive member 21 corresponding to the first element 11E by the connecting member 78s.

As shown in FIG. 63, the first diode DE1 of the first element 11E is electrically connected to the fourth wiring 77D by the connection member 78a. The first diode DE1 of the third element 13E is electrically connected to the ninth wiring 77I by the connection member 78b. The ninth wiring 77I overlaps the fourth wiring 77D in the third direction (eg, Z-axis direction).

As shown in FIG. 64, the third end Ts3 is electrically connected to the third wiring 77C via connection members 78j, 78k and 78l. The first end Ts1 is electrically connected to the third wiring 77C via connecting members 78i, 78k and 78l.

As shown in FIG. 65, the first conductive member 21 corresponding to the first element 11E and the second element 12E is electrically connected to the first wiring 77A via the connecting member 78q. The first conductive member 21 corresponding to the third element 13E and the fourth element 14E is electrically connected to the eighth wiring 77H via the connecting member 78r.

As shown in FIG. 66, the fourth end Ts4 is electrically connected to the sixth wiring 77F via connecting members 78n, 78p and 78o. The second end Ts2 is electrically connected to the sixth wiring 77F via connecting members 78m, 78p and 78o.

As shown in FIG. 67, the first diode DE1 of the second element 12E is electrically connected to the seventh wiring 77G by the connection member 78e. The first diode DE1 of the fourth element 14E is electrically connected to the tenth wiring 77J by the connecting member 78f. The tenth wiring 77J overlaps the seventh wiring 77G in the third direction (eg, Z-axis direction).

As shown in FIG. 68, the fourth other end Td4 is electrically connected to the first conductive member 21 corresponding to the fourth element 14E by connecting members 78h and 78g. The second other end Td2 is electrically connected to the first conductive member 21 corresponding to the second element 12E by the connecting member 78t.

As shown in FIG. 69, the ninth wiring 77I overlaps the fourth wiring 77D in the third direction (eg, Z-axis direction). The tenth wiring 77J overlaps the seventh wiring 77G in the third direction (eg, Z-axis direction). The third other end Td3 is electrically connected to the first conductive member 21 corresponding to the third element 13E by connection members 78d and 78c. In the embodiment, the connection member 78d may overlap the first conductive member 21 corresponding to the third element 13E in the Z-axis direction. In this case, the connection member 78c may be omitted.

As shown in FIG. 70, the third wiring 77C is electrically connected to the connection members 78l and 78k.

As shown in FIG. 71, the first other end Td1 is electrically connected to the first conductive member 21 corresponding to the first element 11E by a connecting member 78s. The second other end Td2 is electrically connected to the first conductive member 21 corresponding to the second element 12E by the connecting member 78t. The first conductive member 21 corresponding to the first element 11E and the second element 12E is electrically connected to the first wiring 77A by the connecting member 78q. The first conductive member 21 corresponding to the third element 13E and the fourth element 14E is electrically connected to the eighth wiring 77H by the connecting member 78r.

As shown in FIG. 72, the sixth wiring 77F is electrically connected to the connection members 78p and 78o.

As shown in FIG. 73, the fourth other end Td4 is electrically connected to the first conductive member 21 corresponding to the fourth element 14E by connection members 78h and 78g.

In magnetic devices 187a-187f, first diode DE1 may comprise a metal silicide.

According to the embodiments, it is possible to provide a magnetic device capable of increasing the density.

In the present specification, "perpendicular" and "parallel" include not only strict perpendicularity and strict parallelism, but also variations in the manufacturing process, for example, and may be substantially perpendicular and substantially parallel. .

The embodiments of the present invention have been described above with reference to specific examples. However, the invention is not limited to these specific examples. For example, with regard to specific configurations of elements such as conductive members, elements, laminates, magnetic layers, non-magnetic layers, conductive portions, insulating portions, and control portions included in magnetic devices, those skilled in the art can appropriately determine the specific configurations within the scope known to those skilled in the art. As long as the selection enables the same implementation of the present invention and the same effect, it is included in the scope of the present invention.

Any combination of two or more elements of each specific example within the technically possible range is also included in the scope of the present invention as long as it includes the gist of the present invention.

In addition, based on the magnetic device described above as an embodiment of the present invention, all magnetic devices that can be implemented by those skilled in the art by appropriately changing the design also belong to the scope of the present invention as long as they include the gist of the present invention. .

In addition, within the scope of the idea of the present invention, those skilled in the art can conceive various modifications and modifications, and it is understood that these modifications and modifications also belong to the scope of the present invention. .

While several embodiments of the invention have been described, these embodiments have been presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and modifications can be made without departing from the scope of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are included in the scope of the invention described in the claims and equivalents thereof.

11, 12... first and second magnetic layers,
11E to 18E ... first to eighth elements,
11el, 12el... first and second electrodes,
11m, 11om, 12m, 12om...magnetization,
11n, 12n... first and second non-magnetic layers,
11o, 12o... first and second opposing magnetic layers,
21... First conductive member,
21a to 21e ... first to fifth parts,
25L, 26L...lower end,
25e, 26e... first and second conductive parts,
25i, 26i... first and second insulating parts,
25p, 26p... partly,
27i to 27k ... insulating part,
31, 32... first and second connection parts,
35, 36... first and second semiconductor members,
70 ... control unit,
70A... Word line and source line control circuit,
70B... bit line control circuit,
75a to 75j, 75r... conductive portion,
77A to 77K... 1st to 11th wirings,
78a to 78t ... connecting members,
79 ... semiconductor region,
110-112, 120-124, 130, 130a-130e, 131a-131f, 132a-132c, 133, 134, 140-142, 150, 160, 170-172, 180, 181, 185, 186, 187a-187f... magnetic device,
BL1, BL2... bit lines,
CL, CL1, CL2...Common line,
CN1 to CN4 ... first to fourth connection members,
DA1... Anode,
DC1... cathode,
DE1... 1st diode,
Dn1, Dn2... 1st, 3rd other end,
Dp1, Dp2... second and fourth other ends,
Dr1, Dr2... first and second drains,
Drr, Drw... Drain,
DsL: metal silicide layer,
DsL1... metal layer,
DsL2... silicon layer,
Dx1, Dx2... first and second extending directions,
Gn1, Gn2... first and third gates,
Gp1, Gp2... second and fourth gates,
Gr1, Gr2... first and second gates,
R-BL, RBL1 to RBL4, RBL1-L, RBL1-R... bit lines,
R-WL... word line,
RWL1 to RWL4... word lines,
S1, S2... first and second laminates,
SL, SL1, SL2... source lines,
Sn1, Sn2... first and third ends,
Sp1, Sp2... second and fourth ends,
Sr1, Sr2... first and second sources,
Td1 to Td9 ... 1st to 9th other ends,
Tg1 to Tg9 ... 1st to 9th gates,
Tn... transistor,
Tn1, Tn2... first and third transistors,
Tp... transistor,
Tp1, Tp2... second and fourth transistors,
Tr1 to Tr13... 1st to 13th transistors,
Ts1 to Ts9 ... first to ninth ends,
W-BL, WBL, WBL1 to WBL4... bit lines,
W-WL, WL... word lines,
WL1, WL2... word lines,
W/R-BL, W/R-BL1, W/R-BL2... bit lines,
W/R-WL, W/R-WL1, W/R-WL2, W/R-WL3, W/R-WL4... word lines,
ic1 ... first current,
rc1, rc2 ... read current,
sf1, sf2... first and second sides,
wc1, wc2 ... write current

Claims (18)

a first element;
a second element;
a first transistor including a first end, a first other end and a first gate;
a second transistor including a second end, a second other end and a second gate;
first to sixth wiring;
with
each of the first element and the second element includes a first conductive member, a first laminate and a first diode;
the first conductive member includes a first portion, a second portion, and a third portion, the third portion being between the first portion and the second portion;
The first laminate includes a first magnetic layer and a first opposing magnetic layer provided between the third portion and the first magnetic layer,
one of the anode and cathode of the first diode is electrically connected to the first magnetic layer;
the first other end is electrically connected to the first portion of the first conductive member of the first element;
the second other end is electrically connected to the first portion of the first conductive member of the second element;
the first wiring is electrically connected to the second portion of the first conductive member of the first element;
the second wiring is electrically connected to the first gate and the second gate;
the third wiring is electrically connected to the first end and the second end;
the fourth wiring is electrically connected to the other of the anode and the cathode of the first diode of the first element;
the fifth wiring is electrically connected to the second portion of the first conductive member of the second element;
The magnetic device, wherein the sixth wiring is electrically connected to the other of the anode and the cathode of the first diode of the second element. the first wiring, the third wiring, the fourth wiring, the fifth wiring, and the sixth wiring extend along a first extending direction;
2. The magnetic device according to claim 1, wherein said second wiring extends along a second extending direction intersecting said first extending direction. the first wiring, the third wiring, and the fifth wiring extend along a first extending direction;
2. The magnetic device according to claim 1, wherein said second wiring, said fourth wiring and said sixth wiring extend along a second extending direction intersecting said first extending direction. a third element;
a fourth element;
a third transistor including a third terminal, a third other terminal and a third gate;
a fourth transistor including a fourth terminal, a fourth other terminal and a fourth gate;
7th to 11th wirings;
further comprising
each of the third element and the fourth element includes the first conductive member, the first laminate and the first diode;
the third other end is electrically connected to the first portion of the first conductive member of the third element;
the fourth other end is electrically connected to the first portion of the first conductive member of the fourth element;
the third wiring is further electrically connected to the third end and the fourth end;
the seventh wiring is electrically connected to the third gate and the fourth gate;
the eighth wiring is electrically connected to the second portion of the first conductive member of the third element;
the ninth wiring is electrically connected to the other of the anode and the cathode of the first diode of the third element;
the tenth wiring is electrically connected to the second portion of the first conductive member of the fourth element;
2. The magnetic device according to claim 1, wherein said eleventh wiring is electrically connected to the other of said anode and said cathode of said first diode of said fourth element. The first wiring, the third wiring, the fourth wiring, the fifth wiring, the sixth wiring, the eighth wiring, the ninth wiring, the tenth wiring, and the eleventh wiring each have a first extension. extending along the direction of
5. The magnetic device according to claim 4, wherein said second wiring and said seventh wiring extend along a second extending direction intersecting said first extending direction. At least a portion of the first conductive member of the first element has a second electrical connection from the first portion of the first conductive member of the first element to the second portion of the first conductive member of the first element. overlapping the first transistor in a second direction that intersects the one direction;
at least part of the first conductive member of the second element overlaps the second transistor in the second direction;
at least part of the first conductive member of the third element overlaps the third transistor in the second direction;
at least part of the first conductive member of the fourth element overlaps the fourth transistor in the second direction;
a direction from the first transistor to the fourth transistor along the first direction;
a direction from the third transistor to the second transistor along the first direction;
a direction from the third transistor to the first transistor includes a component in a third direction that intersects a plane containing the first direction and the second direction;
5. The magnetic device of claim 4, wherein a direction from said second transistor to said fourth transistor includes a component in said third direction. the first wiring, the third wiring, the fifth wiring, the eighth wiring, and the tenth wiring extend along a first extending direction;
The second wiring, the fourth wiring, the sixth wiring, the seventh wiring, the ninth wiring, and the eleventh wiring extend along a second extending direction intersecting the first extending direction, 5. A magnetic device according to claim 4. a first element;
a second element;
a first transistor including a first end, a first other end and a first gate;
a second transistor including a second end, a second other end and a second gate;
first to seventh wiring;
a third element;
a fourth element;
a third transistor including a third terminal, a third other terminal and a third gate;
a fourth transistor including a fourth terminal, a fourth other terminal and a fourth gate;
8th to 10th wirings;
with
each of the first element and the second element includes a first conductive member, a first laminate and a first diode;
the first conductive member includes a first portion, a second portion, and a third portion, the third portion being between the first portion and the second portion;
The first laminate includes a first magnetic layer and a first opposing magnetic layer provided between the third portion and the first magnetic layer,
one of the anode and cathode of the first diode is electrically connected to the first magnetic layer;
the first other end is electrically connected to the first portion of the first conductive member of the first element;
the second other end is electrically connected to the first portion of the first conductive member of the second element;
the first wiring is electrically connected to the second portion of the first conductive member of the first element and the second portion of the first conductive member of the second element;
the second wiring is electrically connected to the first gate,
the third wiring is electrically connected to the first end,
the fourth wiring is electrically connected to the other of the anode and the cathode of the first diode of the first element;
the fifth wiring is electrically connected to the second gate,
the sixth wiring is electrically connected to the second end,
the seventh wiring is electrically connected to the other of the anode and the cathode of the first diode of the second element ;
each of the third element and the fourth element includes the first conductive member, the first laminate and the first diode;
the third other end is electrically connected to the first portion of the first conductive member of the third element;
the fourth other end is electrically connected to the first portion of the first conductive member of the fourth element;
the second wiring is further electrically connected to the third gate;
the third wiring is further electrically connected to the third end,
the fifth wiring is further electrically connected to the fourth gate;
the sixth wiring is further electrically connected to the fourth end,
the eighth wiring is electrically connected to the second portion of the first conductive member of the third element and the second portion of the first conductive member of the fourth element;
the ninth wiring is electrically connected to the other of the anode and the cathode of the first diode of the third element;
The magnetic device, wherein the tenth wiring is electrically connected to the other of the anode and the cathode of the first diode of the fourth element . the first wiring, the third wiring, the sixth wiring, and the eighth wiring extend along a first extending direction;
The second wiring, the fourth wiring, the fifth wiring, the seventh wiring, the ninth wiring, and the tenth wiring extend along a second extending direction that intersects with the first extending direction, 9. A magnetic device according to claim 8 . A first element including a first conductive member and a first laminate, wherein the first conductive member includes a first portion, a second portion, and a second portion between the first portion and the second portion. 3 parts, wherein the first laminate includes a first magnetic layer and a first opposing magnetic layer provided between the third part and the first magnetic layer, the first an element;
a first conductivity type first transistor including a first end, a first other end and a first gate;
a second conductivity type second transistor including a second end, a second other end and a second gate;
a first wiring;
a second wiring;
a third wiring;
with
The first other end is electrically connected to the first portion,
The second other end is electrically connected to the first magnetic layer,
the first wiring is electrically connected to the second portion;
the second wiring is electrically connected to the first gate and the second gate;
The magnetic device, wherein the third wiring is electrically connected to the first end and the second end. further comprising a control unit,
The control unit is electrically connected to the first wiring, the second wiring and the third wiring,
The control unit is capable of performing a first write operation and a first read operation,
In the first write operation, the control unit supplies a current between the first portion and the second portion via the first transistor with the second wiring in a selected state,
11. The method according to claim 10 , wherein in the first read operation, the control unit detects a value corresponding to the electric resistance of the first stacked body through the second transistor while the second wiring is in a non-selected state. magnetic device. a third transistor of the first conductivity type including a third terminal, a third other terminal and a third gate;
a fourth transistor of the second conductivity type including a fourth terminal, a fourth other terminal and a fourth gate;
a fourth wiring;
further comprising
The first element further includes a second laminate,
the first conductive member includes a fourth portion and a fifth portion, the fifth portion being between the second portion and the fourth portion;
the second laminate includes a second magnetic layer and a second opposing magnetic layer provided between the fifth portion and the second magnetic layer;
The third other end is electrically connected to the fourth portion,
The fourth other end is electrically connected to the second magnetic layer,
the fourth wiring is electrically connected to the third gate and the fourth gate;
11. The magnetic device according to claim 10 , wherein said third wiring is electrically connected to said third end and said fourth end. further comprising a control unit,
the control unit is electrically connected to the first wiring, the second wiring, the third wiring, and the fourth wiring;
The control unit is capable of performing a first write operation, a second write operation, a first read operation, and a second read operation ,
In the first write operation, the control unit supplies a current between the first portion and the second portion via the first transistor with the second wiring in a selected state,
In the second write operation, the controller supplies a current between the fourth portion and the second portion via the third transistor with the fourth wiring in a selected state,
In the first read operation, the control unit detects a value corresponding to the electrical resistance of the first stacked body through the second transistor while the second wiring is in a non-selected state,
13. The method according to claim 12, wherein in the second read operation, the controller detects a value corresponding to the electrical resistance of the second stack via the fourth transistor while the fourth wiring is in a non-selected state. magnetic device. a first element;
a second element;
a first conductivity type first transistor including a first end, a first other end and a first gate;
a second conductivity type second transistor including a second end, a second other end and a second gate;
a third transistor of the first conductivity type including a third terminal, a third other terminal and a third gate;
a fourth transistor of the second conductivity type including a fourth terminal, a fourth other terminal and a fourth gate;
a fifth transistor of the first conductivity type including a fifth terminal, a fifth other terminal and a fifth gate;
a sixth transistor of the first conductivity type including a sixth terminal, a sixth other terminal and a sixth gate;
a first wiring;
a second wiring;
a third wiring;
a fourth wiring;
a fifth wiring;
with
each of the first element and the second element includes a first conductive member, a first laminate, and a second laminate;
The first conductive member includes a first portion, a second portion, a third portion, a fourth portion, and a fifth portion, and between the first portion and the fourth portion is the first conductive member. there are two portions, said third portion between said first portion and said second portion, and said fifth portion between said second portion and said fourth portion;
The first laminate includes a first magnetic layer and a first opposing magnetic layer provided between the third portion and the first magnetic layer,
the second laminate includes a second magnetic layer and a second opposing magnetic layer provided between the fifth portion and the second magnetic layer;
the first other end is electrically connected to the first portion of the first conductive member of the first element;
the second other end is electrically connected to the first magnetic layer of the first element and the first magnetic layer of the second element;
the third other end is electrically connected to the fourth portion of the first conductive member of the first element;
the fourth other end is electrically connected to the second magnetic layer of the first element and the second magnetic layer of the second element;
the fifth other end is electrically connected to the first portion of the first conductive member of the second element;
the sixth other end is electrically connected to the fourth portion of the first conductive member of the second element;
the first wiring is electrically connected to the second portion of the first conductive member of the first element;
the second wiring is electrically connected to the first gate, the second gate and the fifth gate;
the third wiring is electrically connected to the first end, the second end, the third end, the fourth end, the fifth end and the sixth end;
the fourth wiring is electrically connected to the third gate, the fourth gate, and the sixth gate;
The magnetic device, wherein the fifth wiring is electrically connected to the second portion of the first conductive member of the second element. a third element;
a seventh transistor of the first conductivity type including a seventh terminal, a seventh other terminal and a seventh gate;
an eighth transistor of the second conductivity type including an eighth terminal, an eighth opposite terminal and an eighth gate;
a ninth transistor of the second conductivity type including a ninth terminal, a ninth other terminal and a ninth gate;
a sixth wiring;
a seventh wiring;
an eighth wiring;
a ninth wiring;
further comprising
the third element includes the first conductive member, the first laminate, and the second laminate;
the fourth portion of the first conductive member of the first element is electrically connected to the first portion of the first conductive member of the third element;
the seventh other end is electrically connected to the fourth portion of the first conductive member of the third element;
The eighth other end is electrically connected to the first magnetic layer of the third element,
the ninth other end is electrically connected to the second magnetic layer of the third element,
the sixth wiring is electrically connected to the eighth gate,
the seventh wiring is electrically connected to the seventh gate and the ninth gate;
the eighth wiring is electrically connected to the seventh end, the eighth end, and the ninth end;
15. The magnetic device according to claim 14 , wherein said ninth wire is electrically connected to said second portion of said first conductive member of said third element. a first element;
a second element;
a first conductivity type first transistor including a first end, a first other end and a first gate;
a second conductivity type second transistor including a second end, a second other end and a second gate;
a third transistor of the first conductivity type including a third terminal, a third other terminal and a third gate;
a fourth transistor of the second conductivity type including a fourth terminal, a fourth other terminal and a fourth gate;
a fifth transistor of the first conductivity type including a fifth terminal, a fifth other terminal and a fifth gate;
a sixth transistor of the second conductivity type including a sixth terminal, a sixth other terminal and a sixth gate;
a seventh transistor of the second conductivity type including a seventh terminal, a seventh other terminal and a seventh gate;
a first wiring;
a second wiring;
a third wiring;
a fourth wiring;
a fifth wiring;
a sixth wiring;
a seventh wiring;
an eighth wiring;
with
each of the first element and the second element includes a first conductive member, a first laminate, and a second laminate;
The first conductive member includes a first portion, a second portion, a third portion, a fourth portion, and a fifth portion, and between the first portion and the fourth portion is the first conductive member. there are two portions, said third portion between said first portion and said second portion, and said fifth portion between said second portion and said fourth portion;
The first laminate includes a first magnetic layer and a first opposing magnetic layer provided between the third portion and the first magnetic layer,
the second laminate includes a second magnetic layer and a second opposing magnetic layer provided between the fifth portion and the second magnetic layer;
the fourth portion of the first conductive member of the first element is electrically connected to the first portion of the first conductive member of the second element;
the first other end is electrically connected to the first portion of the first conductive member of the first element;
The second other end is electrically connected to the first magnetic layer of the first element,
the third other end is electrically connected to the fourth portion of the first conductive member of the first element and the first portion of the first conductive member of the second element;
the fourth other end is electrically connected to the second magnetic layer of the first element;
the fifth other end is electrically connected to the fourth portion of the first conductive member of the second element;
the sixth other end is electrically connected to the first magnetic layer of the second element;
The seventh other end is electrically connected to the second magnetic layer of the second element,
the first wiring is electrically connected to the second portion of the first conductive member of the first element;
the second wiring is electrically connected to the first gate and the second gate;
the third wiring is electrically connected to the first end, the second end, the third end and the fourth end;
the fourth wiring is electrically connected to the third gate and the fourth gate;
the fifth wiring is electrically connected to the second portion of the first conductive member of the second element;
the sixth wiring is electrically connected to the sixth gate,
the seventh wiring is electrically connected to the fifth gate and the seventh gate;
The magnetic device, wherein the eighth wiring is electrically connected to the fifth end, the sixth end, and the seventh end. a first element;
a second element;
a first conductivity type first transistor including a first end, a first other end and a first gate;
a second conductivity type second transistor including a second end, a second other end and a second gate;
a first wiring;
a second wiring;
a third wiring;
a fourth wiring;
with
each of the first element and the second element includes a first conductive member, a first laminate and a first diode;
the first conductive member includes a first portion, a second portion, and a third portion, the third portion being between the first portion and the second portion;
The first laminate includes a first magnetic layer and a first opposing magnetic layer provided between the third portion and the first magnetic layer,
one of the anode and cathode of the first diode is electrically connected to the first magnetic layer;
the first other end is electrically connected to the first portion of the first conductive member of the first element;
the second other end is electrically connected to the first portion of the first conductive member of the second element;
the first wiring is electrically connected to the second portion of the first conductive member of the first element and the second portion of the first conductive member of the second element;
the second wiring is electrically connected to the first gate and the second gate;
the third wiring is electrically connected to the first end and the second end;
The fourth wiring is electrically connected to the other of the anode and the cathode of the first diode of the first element and to the other of the anode and the cathode of the first diode of the second element. , magnetic devices. a first element;
a second element;
a first conductivity type first transistor including a first end, a first other end and a first gate;
a second conductivity type second transistor including a second end, a second other end and a second gate;
a first wiring;
a second wiring;
a third wiring;
a fourth wiring;
with
each of the first element and the second element includes a first conductive member, a first laminate and a first diode;
the first conductive member includes a first portion, a second portion, and a third portion, the third portion being between the first portion and the second portion;
The first laminate includes a first magnetic layer and a first opposing magnetic layer provided between the third portion and the first magnetic layer,
one of the anode and cathode of the first diode is electrically connected to the first magnetic layer;
the first other end is electrically connected to the first portion of the first conductive member of the first element and the other of the anode and the cathode of the first diode of the second element;
The second other end is electrically connected to the other of the anode and the cathode of the first diode of the first element and the first portion of the first conductive member of the second element,
the first wiring is electrically connected to the second portion of the first conductive member of the first element;
the second wiring is electrically connected to the first gate and the second gate;
the third wiring is electrically connected to the first end and the second end;
The magnetic device, wherein the fourth wiring is electrically connected to the second portion of the first conductive member of the second element.

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