JP7325293B2 - SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - Google Patents

Description

The present disclosure relates to a substrate processing apparatus and substrate processing.

The liquid processing system described in Patent Document 1 includes a liquid processing device that supplies a processing liquid to a substrate to perform liquid processing, and a control unit that controls the liquid processing device. A liquid processing apparatus includes a holding section that holds a substrate, and a first supply section that supplies a volatile fluid to the surface of the substrate held by the holding section. IPA (isopropyl alcohol), for example, is used as the volatile fluid. IPA is applied to the patterned side of the substrate. The controller causes the liquid processing device to perform the volatile fluid supply process and the exposure process. The volatile fluid supply process is a process of supplying a volatile fluid from the first supply unit to the surface of the substrate to form a liquid film on the surface of the substrate. An exposure process is a process that exposes the surface of the substrate from the volatile fluid. In the exposure process, the IPA supply position is moved from the central portion of the substrate to the outer peripheral portion of the substrate while rotating the substrate. In the exposure process, while rotating the substrate, the nitrogen gas supply position, which is set radially inward of the substrate based on the IPA supply position, is moved from the center of the substrate to the outer periphery of the substrate.

JP 2014-90015 A

An aspect of the present disclosure provides a technique that can suppress pattern collapse of a concave-convex pattern when drying a substrate.

A substrate processing apparatus according to an aspect of the present disclosure includes
a holding unit that holds the substrate on which the liquid film of the drying liquid is placed;
a heating unit that heats the substrate;
a contact portion that contacts the liquid film from a side opposite to the substrate;
a cooling unit that maintains the temperature of the contact portion at a temperature lower than the temperature of the substrate;
a first moving mechanism that relatively moves the holding portion and the contact portion in a vertical direction;
and a second moving mechanism that relatively moves the holding portion and the contact portion in a horizontal direction.

According to one aspect of the present disclosure, pattern collapse of the uneven pattern can be suppressed when the substrate is dried.

FIG. 1 is a cross-sectional view showing a conventional substrate drying process. FIG. 2 is a cross-sectional view illustrating a drying process for a substrate according to one embodiment. FIG. 3 is a cross-sectional view showing an enlarged part of FIG. 2(B). FIG. 4 is a plan view of the substrate processing apparatus according to one embodiment, showing the state of FIG. 2(B). FIG. 5 is a functional block diagram showing the constituent elements of the control device of FIG. FIG. 6 is a cross-sectional view showing a modification of the contact portion of FIG.

Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In addition, in each drawing, the same reference numerals are given to the same or corresponding configurations, and explanations thereof may be omitted. In this specification, the X-axis direction, the Y-axis direction, and the Z-axis direction are directions perpendicular to each other. The X-axis direction and Y-axis direction are horizontal directions, and the Z-axis direction is vertical direction.

First, a conventional drying process will be described with reference to FIG. FIG. 1(A) is a cross-sectional view showing a liquid film LF at the start of a drying process according to a conventional embodiment. FIG. 1B is a cross-sectional view showing the liquid film LF during the drying process according to the conventional embodiment.

The substrate W has an uneven pattern P on its upper surface, and the uneven pattern P is covered with a liquid film LF of the drying liquid L. As shown in FIG. The dry liquid L is not particularly limited, but for example, an organic solvent such as IPA (isopropyl alcohol) is used. The liquid film LF is formed by, for example, spin coating.

In the conventional drying process, the supply position of the drying liquid L is moved from the central portion of the substrate W toward the outer peripheral portion of the substrate W while the substrate W is rotated. Since the substrate W is rotated, a centrifugal force is generated, and the centrifugal force pushes the liquid film LF radially outward of the substrate W.

First, as shown in FIG. 1A, the liquid film LF is deformed from a disk shape to a donut shape by centrifugal force, and an exposed surface Wa is formed at the center of the upper surface of the substrate W. As shown in FIG. The exposed surface Wa is a surface exposed from the liquid film LF and formed concentrically with the substrate W. As shown in FIG.

Next, as shown in FIG. 1B, the exposed surface Wa of the substrate W spreads from the central portion of the substrate W toward the outer peripheral portion of the substrate W due to centrifugal force. After that, the entire upper surface of the substrate W is exposed from the liquid film LF.

In the conventional drying process, the supply position of a gas such as nitrogen gas is moved so as to follow the supply position of the drying liquid L. As shown in FIG. The gas supply position is radially inside the substrate W with respect to the drying liquid L supply position. When the gas hits the upper surface of the substrate W, the gas flows horizontally along the upper surface of the substrate W, and pushes the inner peripheral surface of the doughnut-shaped liquid film LF radially outward of the substrate W.

As described above, in the conventional drying process, the external force F1 such as centrifugal force and wind pressure is used to enlarge the exposed surface Wa of the substrate W. As shown in FIG. The external force F1 acts horizontally and pushes the inner peripheral surface of the liquid film LF radially outward of the substrate W. As shown in FIG.

Since the external force F1 acts in the horizontal direction, a thin film LF1 with a low liquid level is generated in the vicinity of the outer periphery of the exposed surface Wa of the substrate W, as shown in FIGS. 1A and 1B. The thin film LF1 is also called a boundary layer. The thin film LF1 is generated between the exposed surface Wa of the substrate W and the thick film LF2 having a liquid level higher than that of the thin film LF1.

Since the thin film LF1 is generated, the drying liquid L is likely to be left behind in the concave portions Pa of the uneven pattern P when the thick film LF2 is caused to flow in the horizontal direction by the external force F1. The dry liquid L left behind in the recesses Pa is not discharged from the recesses Pa by the external force F1, and thus is discharged from the recesses Pa by evaporation.

A difference in the evaporation rate of the drying liquid L may occur between the plurality of adjacent recesses Pa. As a result, as shown in FIG. 1(B), the level difference of the dry liquid L is generated. The height difference in the liquid surface of the drying liquid L causes pattern collapse due to surface tension. Moreover, since the drying liquid L is left behind in the recesses Pa, the residue of the drying liquid L is left in the recesses Pa, and particles are generated.

Next, the drying process of this embodiment will be described with reference to FIGS. 2 and 3. FIG. FIG. 2A is a cross-sectional view showing an example of the liquid film before the abutting portion makes contact. FIG. 2(B) is a cross-sectional view showing an example of a liquid film when the abutting portion contacts. FIG. 2(C) is a cross-sectional view showing an example of a liquid film when the contact portion moves with respect to the holding portion. FIG. 3 is a cross-sectional view showing an enlarged part of FIG. 2(B).

In the drying process of this embodiment, the difference between the two vertical attracting forces F2 and F3 is used without using the horizontal external force F1. F2 is the adsorption force between the substrate W and the liquid film LF, and F3 is the adsorption force between the contact portion 30 and the liquid film LF. F3 is greater than F2.

First, as shown in FIG. 2A, the substrate W is placed on the holder 10 . The liquid film LF of the drying liquid L may be formed before the substrate W is placed on the holder 10 or may be formed after the substrate W is placed on the holder 10 . The holding part 10 holds the lower surface of the substrate W on which the liquid film LF is placed.

A heating unit 20 for heating the substrate W is provided inside the holding unit 10 . The heating unit 20 heats the holding unit 10 and heats the substrate W. As shown in FIG. The heating unit 20 heats the holding unit 10 so that the temperature of the holding unit 10 reaches the set temperature. The heating unit 20 is, for example, a heater that generates heat when supplied with power.

The temperature control of the holding unit 10 may be performed while the substrate W is placed on the holding unit 10, and may not be performed until the substrate W is placed on the holding unit 10. However, the controllability can be improved. Therefore, it may be performed before the substrate W is placed on the holding unit 10 . The temperature of the holding section 10 is controlled by power supplied to the heating section 20 .

Next, as shown in FIG. 2B, the contact portion 30 is brought into contact with the liquid film LF from the side opposite to the substrate W, and the cooling portion 40 lowers the temperature of the contact portion 30 than the temperature of the substrate W. keep at a lower temperature.

The relationship between the adsorption force F3 between the contact portion 30 and the liquid film LF and the contact angle _θT of the dry liquid L with respect to the contact portion 30 is expressed by the following equation (1).

上記式（１）中、Ｒは円盤状の液膜ＬＦの半径であり、γは液膜ＬＦの表面張力であり、Ｈは液膜ＬＦの高さである。上記式（１）から明らかなように、液膜ＬＦの高さＨが小さいほど、吸着力Ｆ３が大きい。

In the above formula (1), R is the radius of the disk-shaped liquid film LF, γ is the surface tension of the liquid film LF, and H is the height of the liquid film LF. As is clear from the above formula (1), the smaller the height H of the liquid film LF, the larger the adsorption force F3.

Similarly, the relationship between the adsorption force F2 between the substrate W and the liquid film LF and the contact angle θ _B of the dry liquid L with respect to the substrate W is represented by the following formula (2).

上記式（２）中、Ｒは円盤状の液膜ＬＦの半径であり、γは液膜ＬＦの表面張力であり、Ｈは液膜ＬＦの高さである。上記式（２）から明らかなように、液膜ＬＦの高さＨが小さいほど、吸着力Ｆ２が大きい。

In the above formula (2), R is the radius of the disk-shaped liquid film LF, γ is the surface tension of the liquid film LF, and H is the height of the liquid film LF. As is clear from the above formula (2), the smaller the height H of the liquid film LF, the larger the adsorption force F2.

By the way, in general, the lower the temperature T of the solid, the higher the surface free energy of the solid, the easier it is for the liquid to wet the solid, and the smaller the contact angle θ of the liquid to the solid. The smaller the contact angle θ, the greater the attractive force.

According to this embodiment, the heating section 20 heats the substrate W, and the cooling section 40 cools the contact section 30 to a temperature lower than the temperature of the substrate W. FIG. Since the temperature of the contact portion 30 is lower than the temperature of the substrate W, the dry liquid L is less likely to wet the substrate W and more likely to wet the contact portion 30 .

Therefore, the contact angle θ _T of the dry liquid L with respect to the contact portion 30 is smaller than the contact angle θ _B of the dry liquid L with respect to the substrate W. Therefore, the adsorption force F3 between the contact portion 30 and the liquid film LF is greater than the adsorption force F2 between the substrate W and the liquid film LF.

The temperature T _B at the interface between the substrate W and the liquid film LF is preferably as high as possible, for example, 40° C. or higher, in order to reduce the adsorption force F2 between the substrate W and the liquid film LF. However, the temperature _TB at the interface between the substrate W and the liquid film LF is lower than the boiling point of the drying liquid L in order to prevent the drying liquid L from boiling. When the dry liquid L is IPA, the boiling point of IPA is 82.5°C.

The set temperature of the holding part 10 is determined so that the temperature _TB of the interface between the substrate W and the liquid film LF becomes the target temperature. The set temperature of the holding part 10 is determined in consideration of the heating efficiency, and is determined to be equal to or higher than the temperature _TB of the interface between the substrate W and the liquid film LF.

On the other hand, the temperature _T.sub.T at the interface between the contact portion 30 and the liquid film LF should be lower than the temperature _T.sub.B at the interface between the substrate W and the liquid film LF, and is, for example, 30.degree. The temperature T _T of the interface between the contact portion 30 and the liquid film LF may be equal to or higher than the dew point temperature, for example, 16° C. or higher, in order to prevent the occurrence of dew condensation.

The set temperature of the contact portion 30 is determined so that the temperature _TT of the interface between the contact portion 30 and the liquid film LF becomes the target temperature. The set temperature of the contact portion 30 is determined in consideration of the cooling efficiency, and is set to be equal to or lower than the temperature _TT of the interface between the contact portion 30 and the liquid film LF.

Next, as shown in FIG. 2C, the substrate W and the contact portion 30 are relatively moved in the horizontal direction. For example, the contact portion 30 is moved horizontally. During this time, while heating the substrate W, the contact portion 30 is brought into contact with the liquid film LF from the side opposite to the substrate W, and the temperature of the contact portion 30 is maintained at a lower temperature than the temperature of the substrate W.

As described above, the dry liquid L does not easily wet the substrate W, but easily wets the contact portion 30 . Therefore, as described above, the adsorption force F3 between the contact portion 30 and the liquid film LF is greater than the adsorption force F2 between the substrate W and the liquid film LF. The dry liquid L easily slips on the substrate W and hardly slips on the contact portion 30 .

When the contact portion 30 and the substrate W are in contact with the liquid film LF and the contact portion 30 and the substrate W move relatively horizontally, the liquid film LF does not slip on the contact portion 30. It slips against the substrate W and is ejected from the substrate W. Note that the liquid film LF is discharged from the substrate W similarly when the substrate W is moved in the horizontal direction instead of the contact portion 30 .

Unlike the external force F1 such as the centrifugal force, the two adsorption forces F2 and F3 act in the vertical direction, and therefore do not generate a thin film LF1 (see FIG. 1) called a boundary layer. Therefore, it is possible to prevent the drying liquid L from being left behind in the concave portions Pa of the concave-convex pattern P. Therefore, it is possible to suppress the occurrence of a height difference in the liquid surface of the dry liquid L left behind between the plurality of adjacent recesses Pa. Therefore, pattern collapse due to surface tension can be suppressed. Moreover, since it is possible to prevent the drying liquid L from being left behind in the recesses Pa, it is possible to prevent the residue of the drying liquid L from being left in the recesses Pa, thereby suppressing the generation of particles.

Since the control of the temperature difference between the contact portion 30 and the substrate W is intended to discharge the liquid film LF from the substrate W, it may be performed during the discharge. Therefore, the heating section 20 may heat the substrate W after the contact section 30 and the liquid film LF are brought into contact with each other. However, the heating unit 20 preferably heats the holding unit 10 before the substrate W is held by the holding unit 10 in order to improve the temperature controllability of the holding unit 10 .

Next, a substrate processing apparatus for realizing the substrate processing method shown in FIG. 2 will be described with reference to FIGS. 2 and 4. FIG. The substrate processing apparatus 2 has a holding section 10 , a heating section 20 , a contact section 30 , a cooling section 40 , a first moving mechanism 50 and a second moving mechanism 60 .

The holding unit 10 holds the substrate W on which the liquid film LF is placed. The holding part 10 may contact the entire bottom surface of the substrate W. As shown in FIG. When the heating unit 20 is provided inside the holding unit 10, the heating unit 20 can heat the entire lower surface of the substrate W uniformly. The holding part 10 is formed in a plate shape, for example, and arranged horizontally. The holding part 10 is a vacuum chuck, an electrostatic chuck, a mechanical chuck, or the like.

The heating unit 20 heats the substrate W held by the holding unit 10 . The heating unit 20 may be provided outside the holding unit 10, but is provided inside the holding unit 10 in this embodiment. The heating unit 20 generates heat inside the holding unit 10 . Since the heating part 20 heats the substrate W through the holding part 10, the substrate W can be heated intensively from the side opposite to the contact part 30, and the temperature difference between the contact part 30 and the substrate W can be increased.

The contact portion 30 contacts the liquid film LF from the side opposite to the substrate W. As shown in FIG. The contact portion 30 may contact only a portion of the upper surface of the liquid film LF (for example, a portion in the X-axis direction), but in the present embodiment, the contact portion 30 contacts the entire upper surface of the liquid film LF. Since the entire upper surface of the liquid film LF is covered with the contact portion 30, evaporation of the drying liquid L from the liquid film LF can be suppressed. Further, the adsorption force F3 can be uniformly applied to the entire upper surface of the liquid film LF, and the liquid film LF can be discharged from the substrate W stably.

The contact portion 30 is formed in a plate shape and arranged horizontally. The distance between the contact portion 30 and the holding portion 10 is uniform, and the height H of the liquid film LF is uniform. The adsorption force F3 can be uniformly applied to the entire upper surface of the liquid film LF, and the liquid film LF can be discharged from the substrate W stably. As long as the liquid film LF can be discharged from the substrate W, the height H of the liquid film LF may be uneven, and for example, the contact portion 30 or the holding portion 10 may be arranged obliquely.

As shown in FIG. 4 , the peripheral edge of the contact portion 30 is larger than the peripheral edge of the substrate W, and the contact portion 30 covers the entire substrate W in plan view. Since the liquid film LF of the drying liquid L is formed on the upper surface of the substrate W, the periphery of the liquid film LF does not protrude from the periphery of the substrate W. Therefore, if the contact portion 30 covers the entire substrate W in plan view, the contact portion 30 can cover the entire upper surface of the liquid film LF. As long as the liquid film LF can be discharged from the substrate W, the contact portion 30 may contact only a part of the upper surface of the liquid film LF.

Since the lower surface 31 of the contact portion 30 contacts the dry liquid L, it preferably has an affinity for the dry liquid L. As shown in FIG. “The lower surface of the contact portion 30 has affinity for the dry liquid L” means that the contact angle θ _T of the dry liquid L with respect to the lower surface of the contact portion 30 is 20° or less. If _θT is 20° or less, a sufficiently large attracting force F3 can be obtained.

The contact portion 30 is made of, for example, a metal having excellent thermal conductivity. The metal surface may be subjected to a surface treatment that enhances the affinity for the drying liquid L. Specific examples of such surface treatment include oxygen plasma treatment and coating treatment. Oxygen plasma treatment activates the metal surface. The coating process applies a hydrophilic coating agent to the metal surface.

The cooling part 40 maintains the temperature of the contact part 30 at a temperature lower than the temperature of the substrate W. As shown in FIG. The cooling part 40 supplies the coolant to the flow path inside the contact part 30, for example. The coolant absorbs the heat of the contact portion 30 while flowing through the flow path inside the contact portion 30 and discharges the absorbed heat to the outside of the contact portion 30 . Note that the cooling unit 40 may be a Peltier device or the like.

The first moving mechanism 50 relatively moves the holding portion 10 and the contact portion 30 in the vertical direction. For example, the first moving mechanism 50 includes a Z-axis guide 51 , a Z-axis slider 52 and a Z-axis drive source 53 . The Z-axis drive source 53 moves the Z-axis slider 52 along the Z-axis guide 51 and moves the contact portion 30 together with the Z-axis slider 52 .

The first moving mechanism 50 lowers the contact portion 30 to bring the lower surface 31 of the contact portion 30 into contact with the upper surface of the liquid film LF. Although the first moving mechanism 50 moves the contact portion 30 in the vertical direction in this embodiment, it may move the holding portion 10 in the vertical direction. In the latter case, the first moving mechanism 50 raises the holding portion 10 to raise the substrate W and the liquid film LF and bring the upper surface of the liquid film LF into contact with the lower surface 31 of the contact portion 30 .

The second moving mechanism 60 relatively moves the holding portion 10 and the contact portion 30 in the horizontal direction. For example, the second moving mechanism 60 includes an X-axis guide 61 , an X-axis slider 62 and an X-axis drive source 63 . The X-axis drive source 63 moves the X-axis slider 62 along the X-axis guide 61 and moves the contact portion 30 together with the X-axis slider 62 . A Z-axis guide 51 is fixed to the X-axis slider 62 .

While the second moving mechanism 60 moves the contact portion 30 in the horizontal direction, the contact portion 30 moves along with the liquid film LF, so that the liquid film LF is discharged from the substrate W. FIG. Although the second moving mechanism 60 horizontally moves the contact portion 30 in this embodiment, the second moving mechanism 60 may horizontally move the holding portion 10 . In the latter case, the second moving mechanism 60 horizontally moves the substrate W together with the holding portion 10 while the contact portion 30 restricts the horizontal movement of the liquid film LF. As a result, the liquid film LF is discharged from the substrate W.

The substrate processing apparatus 2 has a control section 90 . The control unit 90 is, for example, a computer, and as shown in FIG. 5, includes a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory. The storage medium 92 stores programs for controlling various processes executed in the substrate processing apparatus 2 . The control unit 90 controls the operation of the substrate processing apparatus 2 by causing the CPU 91 to execute programs stored in the storage medium 92 . The control unit 90 also includes an input interface 93 and an output interface 94 . The control unit 90 receives signals from the outside via an input interface 93 and transmits signals to the outside via an output interface 94 .

The program is stored in, for example, a computer-readable storage medium, and installed from the storage medium to the storage medium 92 of the control unit 90 . Examples of computer-readable storage media include hard disks (HD), flexible disks (FD), compact disks (CD), magnet optical disks (MO), and memory cards. Note that the program may be downloaded from a server via the Internet and installed in the storage medium 92 of the control unit 90 .

Next, details of the control unit 90 will be described with reference to FIG. Each functional block illustrated in FIG. 5 is conceptual, and does not necessarily need to be physically configured as illustrated. All or part of each functional block can be functionally or physically distributed and integrated in arbitrary units. All or any part of each processing function performed by each functional block can be implemented by a program executed by a CPU, or by hardware using wired logic.

As shown in FIG. 5 , the control section 90 has an interval control section 95 , a speed control section 96 and a temperature control section 97 . The spacing control section 95 controls the first moving mechanism 50 to control the vertical spacing between the contact section 30 and the holding section 10 and thus the vertical spacing between the contact section 30 and the substrate W. FIG. The latter spacing is equal to the height H of the liquid film LF. The speed control unit 96 controls the second moving mechanism 60 to control the relative horizontal movement speed between the contact unit 30 and the holding unit 10, and the relative horizontal movement speed between the contact unit 30 and the substrate W. Control movement speed. The temperature control unit 97 controls the heating unit 20 and the cooling unit 40 to control the vertical distribution of the temperature of the liquid film LF.

As shown in FIG. 5 , the substrate processing apparatus 2 may have a detection section 70 . The detection section 70 detects the contact state of the liquid film LF with the contact section 30 and the substrate W. As shown in FIG. The contact state to be detected includes at least one of the height H of the liquid film LF, the contact angle θ _T of the dry liquid L with respect to the contact portion 30, and the contact angle θ _B of the dry liquid L with respect to the substrate W. The detection unit 70 captures an image of the peripheral edge of the liquid film LF with a camera or the like, performs image processing on the captured image, and detects the contact state of the liquid film LF with the contact unit 30 and the substrate W. FIG.

Based on the contact state of the liquid film LF detected by the detection section 70, the gap control section 95 adjusts the vertical gap between the contact section 30 and the holding section 10 to adjust the height H of the liquid film LF. As the height H is smaller, the attracting forces F3 and F2 are larger as is clear from the above formulas (1) and (2). The height H is adjusted so that the liquid film LF slips on the substrate W without slipping on the contact portion 30 and is discharged from the substrate W. FIG. The height H is adjusted so that the attraction force F3 between the contact portion 30 and the liquid film LF is greater than or equal to the threshold.

The detection of the contact state of the liquid film LF and the adjustment of the height H of the liquid film LF are performed after the liquid film LF contacts both the contact portion 30 and the substrate W, and the contact portion 30 and the substrate W. This is done before relative horizontal movement with the substrate W. The detection of the contact state of the liquid film LF and the adjustment of the height H of the liquid film LF are performed while the liquid film LF is being discharged, that is, while the contact portion 30 and the substrate W are moving relative to each other in the horizontal direction. may be performed.

If the substrate processing apparatus 2 does not have the detection unit 70, the space control unit 95 controls the vertical space between the contact part 30 and the holding part 10, and thus the vertical space between the contact part 30 and the substrate W. , control to a preset interval.

The speed control unit 96 adjusts the relative horizontal movement speed between the contact unit 30 and the substrate W based on the contact state of the liquid film LF detected by the detection unit 70 . The moving speed is adjusted so that the liquid film LF slips on the substrate W without slipping on the contact portion 30 and is discharged from the substrate W. FIG. The moving speed is adjusted so that the liquid film LF is not torn.

The detection of the contact state of the liquid film LF and the adjustment of the moving speed are performed after the liquid film LF has contacted both the contact portion 30 and the substrate W, and the contact portion 30 and the substrate W are in contact with each other. before the target is moved horizontally. It should be noted that the detection of the contact state of the liquid film LF and the adjustment of the moving speed may be performed while the liquid film LF is being discharged, that is, while the contact portion 30 and the substrate W are moving relative to each other in the horizontal direction. good.

If the substrate processing apparatus 2 does not have the detection unit 70 , the speed control unit 96 controls the relative horizontal movement speed between the contact unit 30 and the holding unit 10 , and thus the relative movement speed between the contact unit 30 and the substrate W. horizontal movement speed is controlled to a preset movement speed. The set value of the moving speed may be constant, or may vary according to the relative horizontal position between the contact portion 30 and the holding portion 10 .

The temperature control unit 97 adjusts the vertical distribution of the temperature of the liquid film LF based on the contact state of the liquid film LF detected by the detection unit 70 . Adjustment of the vertical distribution of the temperature of the liquid film LF includes at least one of adjustment of the temperature of the holding part 10 or the substrate W and adjustment of the temperature of the contact part 30 . The temperature is adjusted so that the liquid film LF slips on the substrate W without slipping on the contact portion 30 and is discharged from the substrate W. FIG. The temperature is adjusted so that the difference between the two attracting forces F2 and F3 is greater than or equal to the threshold. As the temperature difference between the substrate W and the contact portion 30 increases, the difference between the two adsorption forces F2 and F3 increases, and the liquid film LF and the contact portion 30 are integrated and relatively horizontal with respect to the substrate W. Easy to move in any direction.

The detection of the contact state of the liquid film LF and the adjustment of the temperature of the liquid film LF are performed after the liquid film LF contacts both the contact portion 30 and the substrate W, and when the contact portion 30 and the substrate W are contacted. is moved horizontally relative to the The detection of the contact state of the liquid film LF and the temperature adjustment of the liquid film LF are performed while the liquid film LF is being discharged, that is, while the contact portion 30 and the substrate W are moving relative to each other in the horizontal direction. may

If the substrate processing apparatus 2 does not have the detection unit 70, the temperature control unit 97 controls the vertical distribution of the temperature of the liquid film LF to a preset distribution. That is, when the substrate processing apparatus 2 does not have the detection section 70, the temperature control section 97 controls the temperature difference between the contact section 30 and the substrate W to a preset temperature difference.

Next, a modified example of the contact portion 30 will be described with reference to FIG. FIG. 6A is a cross-sectional view showing a first modified example of the contact portion. FIG. 6B is a cross-sectional view showing a second modification of the contact portion. FIG. 6C is a cross-sectional view showing a third modification of the contact portion. In the above embodiment, the lower surface 31 of the contact portion 30 is flat as shown in FIG. 2, but the contact portion 30 is flat as shown in FIGS. The lower surface 31 may have irregularities 32 .

The shape of the unevenness 32 is not particularly limited, but may be, for example, a rectangular wave shape in FIG. 6A, a triangular wave shape in FIG. 6B, or a shape in which semicircles are arranged in FIG. 6C. The apex of the triangular wave may be flat, as shown in FIG. 6(B). Due to the unevenness 32, the actual surface area S2 is larger than the apparent surface area S1 in plan view.

The relationship between the contact angle θ _T of the dry liquid L with respect to the unevenness 32 and the contact angle θ _T0 of the dry liquid L with respect to the flat surface without the unevenness 32 is expressed by the following formula (3).

上記式（３）はWenzelの式と呼ばれるものである。上記式（３）中、ｒは、Wenzelのラフネスファクターと呼ばれるものであり、Ｓ２／Ｓ１（＞１）である（ｒ＝Ｓ２／Ｓ１）。

The above formula (3) is called the Wenzel formula. In the above formula (3), r is called Wenzel's roughness factor and is S2/S1 (>1) (r=S2/S1).

As is clear from the above formula (3), the unevenness 32 reduces the contact angle _θT . The smaller the contact angle _θT , the larger the adsorption force F3 (see formula (1) above). The liquid film LF can be reliably discharged from the substrate W by moving in the direction. r is, for example, greater than 1 and 10 or less.

Although the embodiments of the substrate processing apparatus and substrate processing method according to the present disclosure have been described above, the present disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These also naturally belong to the technical scope of the present disclosure.

For example, the dry liquid L is not limited to IPA. Dry liquid L may be, for example, HFE (hydrofluoroether), methanol, ethanol, acetone, or trans-1,2-dichloroethylene.

2 substrate processing apparatus 10 holding unit 20 heating unit 30 contact unit 40 cooling unit 50 first moving mechanism 60 second moving mechanism W substrate L drying liquid LF liquid film

Claims (14)

a holding unit that holds the substrate on which the liquid film of the drying liquid is placed;
a heating unit that heats the substrate;
a contact portion that contacts the liquid film from a side opposite to the substrate;
a cooling unit that maintains the temperature of the contact portion at a temperature lower than the temperature of the substrate;
a first moving mechanism that relatively moves the holding portion and the contact portion in a vertical direction;
A substrate processing apparatus comprising: a second moving mechanism that relatively moves the holding portion and the contact portion in a horizontal direction. 2. The substrate processing apparatus according to claim 1, wherein a lower surface of said contact portion is in contact with said liquid film and has affinity for said drying liquid. 3. The substrate processing apparatus according to claim 1, wherein a lower surface of said contact portion has unevenness. 4. The substrate processing apparatus according to claim 1, wherein a peripheral edge of said contact portion is larger than a peripheral edge of said substrate in plan view, and said contact portion covers the entire substrate. 5. The substrate processing apparatus according to claim 1, wherein said heating section is provided inside said holding section. 6. The substrate processing apparatus according to claim 1, further comprising a detection section for detecting a contact state of said liquid film with said contact section and said substrate. 7. A space control unit that controls the first moving mechanism based on the contact state of the liquid film detected by the detection unit, and controls a vertical space between the contact unit and the holding unit. The substrate processing apparatus according to 1. a speed control unit that controls the second moving mechanism based on the contact state of the liquid film detected by the detection unit, and controls a relative horizontal movement speed between the contact unit and the holding unit; The substrate processing apparatus according to claim 6 or 7. 9. The method according to any one of claims 6 to 8, further comprising a temperature control unit that controls the heating unit or the cooling unit based on the contact state of the liquid film detected by the detection unit, and controls the vertical distribution of the temperature of the liquid film. The substrate processing apparatus according to any one of items 1 and 2. While heating the substrate on which the liquid film of the drying liquid is placed, the contact portion is brought into contact with the liquid film from the side opposite to the substrate, and the temperature of the contact portion is lowered to a temperature lower than the temperature of the substrate. and
A substrate processing method comprising relatively moving the substrate and the contact portion in a horizontal direction to discharge the liquid film from the upper surface of the substrate. 11. The substrate processing method according to claim 10, further comprising detecting a contact state of said liquid film with said contact portion and said substrate. 12. The substrate processing method according to claim 11, further comprising controlling a vertical distance between said contact portion and said substrate based on said detected contact state of said liquid film. 13. The substrate processing method according to claim 11, further comprising controlling a relative horizontal movement speed between said contact portion and said substrate based on said detected contact state of said liquid film. 14. The substrate processing method according to claim 11, further comprising controlling a vertical distribution of temperature of said liquid film based on said detected contact state of said liquid film.

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