JP7346044B2 - Vacuum processing equipment - Google Patents

Description

The present invention provides vacuum processing that includes a vacuum chamber capable of forming a vacuum atmosphere, a stage on which a substrate to be processed is installed in the vacuum chamber, and an annular adhesion prevention plate arranged at a distance around the stage. Regarding equipment.

For example, in the manufacturing process of semiconductor devices, there is a process in which a substrate to be processed, such as a silicon wafer, is subjected to a specified vacuum process in a vacuum chamber that can create a vacuum atmosphere. A sputtering apparatus that performs film formation by a sputtering method is known, for example, from Patent Document 1. This device has a vacuum chamber, a sputtering target is placed in the upper part of the vacuum chamber, and a stage is provided in the lower part of the vacuum chamber on which a substrate to be processed is placed facing the target. The stage includes, for example, a metal base with a cylindrical outline and a chuck plate provided on the top surface of the base, and the chuck can be chucked by applying a predetermined voltage to an electrode for an electrostatic chuck embedded in the chuck plate. The substrate to be processed is electrostatically attracted to the plate surface.

When a film is formed on a substrate to be processed using the sputtering apparatus, sputtered particles generated by sputtering the target are scattered from the target surface according to a predetermined cosine law, but they also adhere to and accumulate on surfaces other than the substrate to be processed. For this reason, generally, an annular adhesion prevention plate, also called a platen ring or a cover ring, is set around the stage (chuck plate) concentrically and with a predetermined gap, and is placed around the stage and further away from the substrate to be processed. Prevents sputtered particles from wrapping around and adhering to the space below (including the back surface of the substrate that extends radially outward from the chuck plate when the substrate is electrostatically attracted to the surface of the chuck plate). . Then, before the deposited film on its surface reaches a predetermined thickness, the deposited film is subjected to a peeling process such as blasting, and the deposited film is repeatedly reused.

After a film has been formed on the substrate to be processed, when the substrate with the film formed thereon is transferred from the stage to the vacuum transfer robot and carried out from the vacuum chamber, the substrate to be processed may be cracked or chipped. It turns out that problems may occur. Therefore, the inventor of the present application conducted extensive research and came to the following knowledge.

In other words, if the peeling treatment is repeatedly performed on the adhesion-prevention plate, the adhesion-prevention plate becomes thin and deformed (for example, when the substrate to be processed is electrostatically attracted to the chuck plate surface, radially outward from the chuck plate The wall thickness of the inner edge side of the adhesion prevention plate facing the back surface of the extending substrate to be processed becomes thinner, or the inner edge of the annular adhesion prevention plate is locally shaved and the inner diameter of the adhesion prevention plate is locally reduced. may become larger). In addition, when setting a peel-treated anti-adhesion plate, the plate may be set in an attitude that is shifted in one direction in the radial direction relative to the stage, or in an attitude that is tilted relative to the stage ( Incorrect setting of the so-called adhesion prevention plate). In such a case, there will be a locally enlarged area in the gap between the inner edge of the deposition prevention plate and the side surface of the stage, or in the gap between the deposition prevention plate and the back surface of the substrate to be processed. If sputtering is performed in this condition, more sputtered particles will get around from areas with large gaps, resulting in adhesion and accumulation of sputtered particles on the back side of the substrate to be processed, the side surfaces of the stage, and the outer periphery of its upper surface. As a result, the substrate to be processed locally sticks to the stage, causing transportation trouble.

Japanese Patent Application Publication No. 2014-91861

In view of the above points, it is an object of the present invention to provide a vacuum processing apparatus that can prevent the occurrence of transportation troubles.

In order to solve the above problems, we have developed a vacuum chamber capable of creating a vacuum atmosphere, a stage on which a substrate to be processed is installed inside the vacuum chamber, and an annular adhesion prevention plate placed at a distance around the stage. The vacuum processing apparatus of the present invention includes a chuck plate in which the stage has an electrostatic chuck electrode. An AC power source that applies an AC voltage between the substrate to be processed and an adhesion prevention plate whose surface is conductive at least through an electrostatic chuck electrode while the substrate is being attracted to The present invention is characterized by further comprising a gap management means for managing the gap between the adhesion prevention plate and the substrate to be processed based on the capacitance. As a result, the electrostatic chuck electrode is also used as an electrode for determining capacitance, which is advantageous because the number of component parts can be reduced.

Here, according to the trial and error research conducted by the inventors of the present application, the deposition prevention plate We have found that if the gap changes (locally) due to thinning or incorrect setting, the capacitance between the substrate to be processed and the adhesion prevention plate installed on the stage also changes. Based on such knowledge, the present invention uses an AC power supply that applies an AC voltage between the substrate to be processed and the anti-adhesion plate, and an AC power source that applies an AC voltage between the anti-adhesion plate and the substrate to be processed based on the capacitance at this time. A configuration is adopted in which a gap management means is provided to manage the gap between the two. According to this, the capacitance at the normal position of the deposition prevention plate, which is determined experimentally in advance, is used as the reference value, and if the measured capacitance changes beyond a predetermined range from the reference value, it is determined that the capacitance is due to sputtering. It can be determined that there is thinning or incorrect setting of the adhesion prevention plate due to local sticking of the substrate to the stage during film formation. As a result, transportation troubles caused by local sticking of the substrate to the stage can be prevented. Note that the present invention includes a case where the gap between the adhesion prevention plate and the substrate to be processed is managed based on the capacitance measured using a management board that is a jig.

The stage also includes a vacuum chamber capable of creating a vacuum atmosphere, a stage on which a substrate to be processed is placed within the vacuum chamber, and an annular adhesion prevention plate placed at a distance around the stage. In a vacuum processing apparatus having a chuck plate having an electrostatic chuck electrode, the stage has a plurality of electrodes separate from the electrostatic chuck electrode provided at intervals along the outer periphery of the stage, and the stage A substrate to be processed is placed on the stage, a voltage is applied to the electrostatic chuck electrode , and the substrate to be processed is attracted to the stage. The method further includes an AC power source that applies an AC voltage between the deposition plate and the substrate, and a gap management means that manages the gap between the deposition prevention plate and the substrate to be processed based on the capacitance when the AC voltage is applied. It is preferable . According to this, an AC voltage is applied between the substrate and the anti-adhesion plate through each electrode, and the capacitance of each can be measured, and the local bias (direction) of the capacitance can be detected. can do. As a result, it is possible to detect the positional relationship between the deposition prevention plate and the stage, that is, in which direction the deposition prevention plate is incorrectly set.

In order to solve the above problems, we have developed a vacuum chamber capable of creating a vacuum atmosphere, a stage on which a substrate to be processed is installed inside the vacuum chamber, and an annular adhesion prevention plate placed at a distance around the stage. In the vacuum processing apparatus, the stage has a plurality of electrodes provided at intervals in the circumferential direction on the outer circumferential surface of the stage, and a selection means for selecting any one electrode from the plurality of electrodes; An AC power supply that applies an AC voltage between the electrode selected by the selection means from among the plurality of electrodes and the adhesion prevention plate, and an AC power source that applies an AC voltage between the electrode selected by the selection means from among the plurality of electrodes and the adhesion prevention plate and the stage based on the capacitance when the AC voltage is applied. The invention is characterized in that it further includes a gap management means for managing the gap between the two.

Based on the above knowledge, the present invention uses an AC power supply that applies an AC voltage between each electrode provided on the outer peripheral surface of the stage and the adhesion prevention plate, and an AC power supply that applies an AC voltage between the adhesion prevention plate and the adhesion prevention plate based on the capacitance at that time. A configuration is adopted in which a gap management means is provided to manage the gap between the stage and the outer peripheral surface. According to this, the capacitance at the normal position of the deposition prevention plate, which is determined experimentally in advance, is used as the reference value, and if the measured capacitance changes beyond a predetermined range from the reference value, it is determined that the capacitance is due to sputtering. It can be determined that there is thinning or incorrect setting of the adhesion prevention plate due to local sticking of the substrate to the stage during film formation. As a result, transportation troubles caused by local sticking of the substrate to the stage can be prevented.

FIG. 1 is a schematic diagram showing a sputtering apparatus according to an embodiment of the present invention. FIG. 2 is an enlarged view of a part of FIG. 1; (a) and (b) are schematic diagrams showing modified examples of the present invention. (a) is a schematic sectional view showing a modification of the present invention, and (b) is a schematic bottom view of the management board shown in FIG. 4(a). (a) and (b) are schematic diagrams showing modified examples of the present invention.

Hereinafter, with reference to the drawings, the vacuum processing apparatus of the present invention will be exemplified using a sputtering apparatus that forms a predetermined thin film on the surface of the substrate Sw by sputtering, using a silicon wafer (hereinafter referred to as "substrate Sw") as the substrate to be processed. An embodiment of the following will be described. In the following, terms indicating directions are based on the installation orientation shown in FIG. 1.

Referring to FIG. 1, SM is the sputtering apparatus of this embodiment. The sputtering apparatus SM includes a vacuum chamber 1 capable of creating a vacuum atmosphere. A cathode unit 2 is detachably attached to the upper opening of the vacuum chamber 1. The cathode unit 2 includes a target 21 and a magnet unit 22 arranged above the target 21. As the target 21, a known material such as aluminum, copper, titanium, or alumina is used depending on the thin film to be formed on the surface of the substrate Sw. Then, the target 21 is attached to the backing plate 21a and placed in the upper part of the vacuum chamber 1 with its sputtering surface 21b facing downward through an insulator 31 which also serves as a vacuum seal provided on the upper wall of the vacuum chamber 1. can be attached to.

The target 21 is connected to an output 21d from a sputtering power source 21c, which is composed of a DC power source, an AC power source, or the like depending on the target type, and is connected to an output 21d of a sputtering power source 21c, which is composed of a DC power source, an AC power source, or the like depending on the target type. Electric power (AC power) can be input. The magnet unit 22 generates a magnetic field in the space below the sputtering surface 21b of the target 21, captures electrons etc. ionized below the sputtering surface 21b during sputtering, and efficiently ionizes the sputtered particles scattered from the target 21. It has a closed magnetic field or cusp magnetic field structure, and detailed explanation will be omitted here.

A stage 4 is arranged at the bottom of the vacuum chamber 1 so as to face a target 21 . The stage 4 includes a base 41 made of metal (for example, made of stainless steel) and having a cylindrical outline, which is installed via an insulator 32 provided at the bottom of the vacuum chamber 1, and a base 41 made of metal (for example, made of stainless steel) that is installed on the top surface of this base 41. For example, a chuck plate 42 made of aluminum nitride is provided. The chuck plate 42 has an upper surface having an outer diameter one size smaller than that of the base 41, and has an extending portion 42a extending radially outward from a lower portion of the side surface of the chuck plate 42. At least one (two in this embodiment) electrode 42b for an electrostatic chuck is embedded in the chuck plate 42, and by applying a DC voltage to this electrode 42b from a DC power supply serving as a chuck power supply 43, the chuck The substrate Sw can be electrostatically attracted to the upper surface of the plate 42. In this embodiment, since the upper surface of the chuck plate 42 has an outer diameter smaller than the substrate Sw, when the substrate Sw is electrostatically attracted to the upper surface of the chuck plate 42, the substrate Sw is radially outward from the chuck plate 42. is extending.

A gas pipe 5 for introducing sputtering gas is connected to a side wall of the vacuum chamber 1, and the gas pipe 5 communicates with a gas source (not shown) via a mass flow controller 51. The sputtering gas includes not only a rare gas such as argon gas, which is introduced when forming plasma in the vacuum chamber 1, but also a reactive gas such as oxygen gas and nitrogen gas. Also connected to the bottom wall of the vacuum chamber 1 is an exhaust pipe 62 leading to a vacuum pump 61 composed of a turbo-molecular pump, a rotary pump, etc., which evacuates the inside of the vacuum chamber 1 at a constant speed and discharges sputter gas during sputtering. The vacuum chamber 1 can be maintained at a predetermined pressure in the introduced state.

There is a space around the stage 4 in the vacuum chamber 1 below the substrate Sw (a space extending radially outward from the chuck plate 42 when the substrate Sw is electrostatically attracted to the upper surface of the chuck plate 42). A platen ring 7 is provided with a gap therebetween, which functions as an adhesion prevention plate for preventing sputtered particles from adhering to the back surface of the substrate Sw to be output (including the back surface of the substrate Sw). The platen ring 7 is made of a known material such as alumina or stainless steel, and when the platen ring 7 is made of an insulator such as alumina, its surface is coated with a metal film. The platen ring 7 is provided on the upper surface of the extending portion 42a of the chuck plate 42 with an insulator 33 in between. Note that the wall thickness of the platen ring 7 (the inner edge side portion 71 thereof) is determined so that the gap Cg between the platen ring 7 and the substrate Sw is within a predetermined range.

Further, an adhesion prevention plate 8 made of stainless steel, for example, is provided in the vacuum chamber 1 to prevent sputtered particles generated by sputtering the target 21 from adhering to the inner wall surface of the vacuum chamber 1 . The adhesion prevention plate 8 is composed of an upper adhesion prevention plate 81 and a lower adhesion prevention plate 82, each having a cylindrical outline. The upper adhesion prevention plate 81 is suspended via a locking portion 11 provided at the top of the vacuum chamber 1 . A drive shaft 83a from a drive means 83 extending through the lower wall of the vacuum chamber 1 is connected to the lower adhesion prevention plate 82. The lower adhesion-prevention plate 82 is moved upward from the film-forming position shown in the figure to a predetermined height position by the driving means 83, and then transferred to the stage 4 by a vacuum transfer robot (not shown). It is moved up and down between the transfer position where the substrate Sw is transferred.

The sputtering apparatus SM includes a control means CU including a microcomputer, a memory element, a sequencer, etc., and this control means CU controls a sputtering power source 21c, a chuck power source 43, a mass flow controller 51, a vacuum pump 61, a driving means 83, etc. It centrally controls the operation of each part. Although details will be described later, the control means CU controls the operation of the AC power supply 44, switch 45, and ammeter 46, measures the capacitance between the substrate Sw and the platen ring 7, and calculates the measured capacitance. Based on this, the gap Cg between the substrate Sw and the platen ring 7 is managed. Therefore, the control means CU corresponds to the gap management means in the claims. Note that since a known method can be used to measure capacitance, detailed explanation will be omitted in this embodiment. The film forming method will be described below using an example in which the target 21 is aluminum and an aluminum film is formed on the surface of the substrate Sw using the sputtering apparatus SM.

After various parts such as the target 21, the platen ring 7, and the adhesion prevention plate 8 are set in the vacuum chamber 1, the vacuum pump 61 is operated to evacuate the airtight vacuum chamber 1. Next, the substrate W is placed on the upper surface of the chuck plate 42 of the stage 4 by a vacuum transfer robot (not shown). When the vacuum transfer robot retreats, the lower adhesion prevention plate 82 is moved downward from the transfer position to the film forming position. Then, by applying a DC voltage from the chuck power supply 43 to the electrostatic chuck electrode 42b, the substrate Sw is electrostatically attracted to the upper surface of the chuck plate 42.

When the pressure in the vacuum chamber 1 reaches a predetermined pressure (for example, 10 ⁻⁵ Pa), argon gas as a sputtering gas is introduced at a constant flow rate (for example, argon partial pressure is 0.5 Pa) through the gas pipe 5. At the same time, a predetermined power having a negative potential (for example, 3 to 50 kW) is applied to the target 21 from the sputtering power source 21c. As a result, plasma is formed in the vacuum chamber 1, and the sputtering surface 21b of the target 21 is sputtered by ions of argon gas in the plasma, and sputtered particles from the target 21 adhere and deposit on the substrate Sw to form an aluminum film. Filmed.

Here, due to thinning or incorrect setting of the platen ring 7, there may be a place where the gap Cg between the substrate Sw and the platen ring 7 becomes large (locally), and if sputtering is performed in this state, the gap Cg More sputtered particles wrap around from locations where the distance is larger, causing local sticking of the substrate Sw to the stage 4 and causing transport trouble. Since such transportation troubles cause a decrease in productivity, it is necessary to prevent them from occurring.

Therefore, in this embodiment, when the switch 45 is turned on with the substrate Sw electrostatically attracted to the upper surface of the chuck plate 42, an AC voltage is applied between the substrate Sw and the platen ring 7 via the electrode 42b. A power supply 44 and an ammeter 46 that measures the current value flowing when an AC voltage is applied from the AC power supply 44 are provided, and the control means CU calculates the capacitance from the AC voltage and the current value input from the ammeter 46. It was configured so that it could be measured. According to the findings of the inventors of the present application, the platen ring 7 is thinner and more erroneous than the state where the platen ring 7 is set at the normal position around the stage 4, where the gap Cg is substantially constant throughout. When the gap Cg changes locally due to setting, the capacitance also changes. Therefore, the capacitance at the normal position of the platen ring 7, which is determined experimentally in advance, is used as the reference value (see Experiment 1 described later), and the measured capacitance changes beyond the predetermined range from the reference value. Therefore, it can be determined that the platen ring 7 is thin or incorrectly set, causing local sticking of the substrate Sw to the stage 4 during film formation by sputtering. As a result, transport troubles caused by local sticking of the substrate Sw to the stage 4 can be prevented.

Next, in order to confirm the above effect, the following experiment was conducted using the above sputtering apparatus SM. That is, in Experiment 1, the substrate Sw was a silicon wafer with a diameter of 300 nm, the target 21 was made of aluminum with a diameter of 400 mm, the substrate Sw was placed on the chuck plate 42 of the stage 4, and a voltage was applied to the electrode 42b to increase the substrate Sw. was electrostatically adsorbed. In this experiment 1, the platen ring 7 is set at a position (regular position) where the gap Cg between the electrostatically attracted substrate Sw and the platen ring 7 is approximately constant over the entire area, and the gap Cg is It was 0.23 mm. In this state, for example, an AC voltage of 10 V of 10 kHz was applied between the substrate Sw and the platen ring 7, and the capacitance at this time was 1 nF, and this measured capacitance was used as a reference value. When the pressure inside the vacuum chamber 1 reached a predetermined pressure (for example, 1×10 ⁻⁵ Pa), the mass flow controller 51 was controlled to introduce argon gas at a predetermined flow rate (for example, 100 sccm). At the same time, by supplying, for example, 5 kW of DC power with a negative potential to the target 21 from the sputtering power supply 21c, a plasma atmosphere is formed in the vacuum chamber 1, and the sputtering surface 21b of the target 21 is sputtered, causing the sputtering The sputtered particles were attached and deposited on the substrate Sw to form an aluminum film. After film formation, when the substrate Sw was transferred from the stage 4 to the vacuum transfer robot, there was no local sticking of the substrate Sw to the stage 4 (chuck plate 42), and it was confirmed that no transfer trouble occurred.

Next, in Experiment 2, the platen ring 7 that had been subjected to repeated blasting peeling treatments and has become thinner (the inner edge portion 71 had a thinner wall thickness) was set, and the substrate Sw was electrostatically adsorbed onto the chuck plate 42. . The gap Cg between the electrostatically attracted substrate Sw and the platen ring 7 changed to 0.59 mm, and when the capacitance was measured in this state, it was 0.3 nF. Then, using the same conditions as in Experiment 1 above, an aluminum film was formed on the substrate Sw. After film formation, when the substrate Sw was transferred from the stage 4 to the vacuum transfer robot, it was confirmed that local sticking of the substrate Sw to the stage 4 (chuck plate 42) occurred. Therefore, it has been found that if the measured capacitance changes by more than -0.7 nF from the reference value, it can be determined that the platen ring 7 is thinning.

According to the above experiment, it was confirmed that the measured capacitance also changes as the gap Cg changes. Furthermore, if the platen ring 7 is thin or incorrectly set, which causes local sticking of the substrate Sw to the stage 4, the measured capacitance will vary from the reference value to a predetermined range (±0. 7 nF).

Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention. In the above embodiment, the case where the vacuum processing apparatus is the sputtering apparatus SM has been described as an example, but the vacuum processing apparatus may also be a vacuum processing apparatus in which a ring-shaped adhesion prevention plate is provided in the vacuum chamber with a space around the stage. For example, the present invention is not limited to this, and can also be applied to, for example, a dry etching apparatus. Even in dry etching equipment, reaction products adhere to the surface of the adhesion prevention plate to form a deposited film, and a peeling process such as blasting is performed to remove this deposited film. You can obtain the same effect as the form.

In the above embodiment, an AC voltage was applied between the substrate Sw and the platen ring 7 via the electrode 42b, but as shown in FIG. A plurality of electrodes 42c (four in the example shown in FIG. 3) are provided at intervals along the outer periphery of the electrode 42, and one of the electrodes 42c is selected by operating the switches 47a and 47b. It may be configured such that an AC voltage can be applied between the substrate Sw and the platen ring 7 via the selected electrode 42c. In this case, the capacitance (or impedance value) can be measured by changing the electrode 42c to which the AC voltage is applied using the switches 47a and 47b, and the local bias (direction) of the capacitance can be detected. be able to. This makes it possible to detect the positional relationship between the platen ring 7 and the chuck plate 42, that is, in which direction the platen ring 7 is incorrectly set. Alternatively, if the electrode 42c is changed during the film forming process and the capacitance (or impedance value) of each is measured, and there is a difference in the measured capacitance (or impedance value), the By adjusting the transport position of the substrate Sw, it is possible to prevent transport troubles due to local gap changes.

In the above embodiment, the case where the gap Cg between the substrate Sw and the platen ring 7 is managed is explained as an example, but the annular adhesion prevention plate is not limited to the platen ring 7, and for example, the substrate Sw and the lower adhesion prevention plate The present invention can also be applied to the case of managing the gap Cg2 between 82 and 82. In this case, as shown in FIG. 4, the capacitance is measured using the management board 9, which is a jig, and the gap Cg2 between the board Sw and the lower adhesion prevention plate 82 is determined based on the capacitance. can be managed. The management board 9 is composed of a disk-shaped base 91 and an annular protrusion 92 that protrudes downward from the outer periphery of the base 91. The portion 92a is made of a conductive material, and the remaining second portion 92b is made of an insulating material. An electrode 82a is provided on the lower surface of the lower deposition prevention plate 82, and electricity can be applied to the lower deposition prevention plate 82 via this electrode 82a. Note that not only a portion of the protruding portion 92 but also a portion of the base portion 91 may be formed of a conductive material. As shown in FIG. 4, the management board 9 is arranged, and the first portion 92a of the management board 9 is brought into contact with the right electrode 42c shown in FIG. 4(a) provided on the upper surface of the stage 42. In this state, the electrode 82c is selected by operating the switches 47a and 47b as in the example shown in FIG. is applied and the capacitance (or impedance value) is measured. Then, after rotating the management board 9 by 90 degrees in the circumferential direction, the capacitance (or impedance value) is measured. By repeating this process, local bias (direction) of capacitance can be detected. Thereby, it is possible to detect in which direction the platen ring 7 is incorrectly set. Note that the management board 9 is not limited to that shown in FIG. 4, and may be any board having a conductive portion that comes into contact with the electrode 42c selected by the switches 47a, 47b and conducts with it.

Furthermore, when the chuck plate has a larger area than the substrate Sw, an annular adhesion prevention plate called a covering is generally arranged to cover the peripheral edge of the chuck plate exposed on the outside in the radial direction of the substrate Sw. The present invention can also be applied to the case of managing the gap between the substrate Sw and the covering.

The present invention can also be applied to the case of managing the gap Cg3 between the outer circumferential surface 42d of the stage 42 and the platen ring 7. That is, as shown in FIG. 5, a plurality of (four in the example shown in FIG. 5) electrodes 42e are provided on the outer circumferential surface 42d of the stage 42 at intervals in the circumferential direction, and a switch is provided as in the example shown in FIG. It may be configured such that one of the electrodes 42e is selected by operating the electrodes 47a and 47b, and an AC voltage can be applied between the selected electrode 42e and the platen ring 7 from the AC power source 44. In this case as well, it is possible to measure the capacitance (or impedance value) of each electrode by changing the electrode 42e to which the AC voltage is applied, and detect the local bias (direction) of the capacitance. This makes it possible to detect the positional relationship between the platen ring 7 and the chuck plate 42, that is, in which direction the platen ring 7 is incorrectly set. Alternatively, if the electrode 42e is changed during the film forming process and the capacitance (or impedance value) of each is measured, and there is a difference in the measured capacitance (impedance value), the By adjusting the transport position of the substrate Sw, it is possible to prevent transport troubles due to local gap changes. In the example shown in FIG. 5, the electrodes (excluding the electrostatic chuck electrode) 42e are provided only on the outer peripheral surface 42d of the stage 42, but the electrodes 42e are provided from the upper surface of the stage 42 to the outer peripheral surface 42d. Good too. Further, an electrode 33a is provided on the upper surface of the insulator 33, and the platen ring 7 is energized through the electrode 33a, but the platen ring 7 may be energized directly.

Cg...Gap between platen ring and substrate, Cg2...Gap between lower adhesion prevention plate and substrate, Cg3...Gap between platen ring and stage, CU...Control means (gap management means), SM... Sputtering device (vacuum processing device), Sw...substrate (substrate to be processed), 1...vacuum chamber, 4...stage, 41...base, 42...chuck plate, 42c...electrode for electrostatic chuck, 42e...electrode, 43 ...AC power source, 7...Platen ring (adhesion prevention plate), 82...Lower adhesion prevention plate (adhesion prevention plate).

Claims (3)

The stage is equipped with a vacuum chamber capable of creating a vacuum atmosphere, a stage on which a substrate to be processed is placed within the vacuum chamber, and an annular adhesion prevention plate placed at a distance around the stage. In a vacuum processing apparatus having a chuck plate having a chuck electrode,
The substrate to be processed is placed on the stage and a voltage is applied to the electrostatic chuck electrode to make the substrate to be processed and at least its surface conductive through the electrostatic chuck electrode while the substrate is attracted to the stage. The invention further includes an AC power supply that applies an AC voltage between the deposition prevention plate and a gap management means that manages the gap between the deposition prevention plate and the substrate to be processed based on the capacitance when the AC voltage is applied. A vacuum processing apparatus comprising: The stage is equipped with a vacuum chamber capable of creating a vacuum atmosphere, a stage on which a substrate to be processed is placed within the vacuum chamber, and an annular adhesion prevention plate placed at a distance around the stage. In a vacuum processing apparatus having a chuck plate having a chuck electrode,
The stage has a plurality of electrodes separate from the electrostatic chuck electrode provided at intervals along its outer periphery, and a substrate to be processed is placed on the stage and a voltage is applied to the electrostatic chuck electrode. an AC power source that applies an AC voltage between the substrate to be processed and an adhesion prevention plate having at least a conductive surface through the plurality of electrodes, with the substrate to be processed being attracted to the stage; A vacuum processing apparatus further comprising a gap management means for controlling a gap between the adhesion prevention plate and the substrate to be processed based on capacitance when a voltage is applied. A vacuum processing apparatus comprising a vacuum chamber capable of forming a vacuum atmosphere, a stage on which a substrate to be processed is placed within the vacuum chamber, and an annular adhesion prevention plate disposed at a distance around the stage,
The stage has a plurality of electrodes provided on its outer peripheral surface at intervals in the circumferential direction, a selection means for selecting any one electrode from the plurality of electrodes, and a selection means from among the plurality of electrodes. An AC power source that applies an AC voltage between the selected material and the adhesion prevention plate, and a gap management that manages the gap between the adhesion prevention plate and the stage based on the capacitance when AC voltage is applied. A vacuum processing apparatus further comprising means.

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