JP7347351B2 - Method for measuring resistivity of silicon single crystal wafers - Google Patents

Description

The present invention relates to a method for measuring resistivity of silicon single crystal wafers.

In recent years, in semiconductor device manufacturing, there has been a demand for further miniaturization and higher yields, and along with this, there has also been a demand for higher accuracy in measuring the resistivity of silicon single crystal wafers. In resistivity measurement, measurement position accuracy has a large effect on resistivity measurement accuracy.

In a wafer resistivity measurement device, a method for measuring resistivity at arbitrary and multiple measurement points usually requires a stage on which a silicon single crystal wafer to be measured is placed, a rotation mechanism and a horizontal movement mechanism for the stage, and a mechanism for rotating and horizontally moving the stage. For a device equipped with a control mechanism for controlling the mechanism, a silicon single crystal wafer is installed at the center of the stage, and the distance in the radial direction of the stage is set at 0 mm from the center of the stage, and the reference position of the stage is set at 0°. The silicon single crystal wafer is sequentially moved so that each measurement point is located directly below the measurement probe according to this recipe data, and the measurement probe is A method is used in which the resistivity of each measurement point is measured by bringing the resistivity into contact with each measurement point.

In addition, as a method for automatically inspecting the characteristics of samples such as semiconductor wafers, for example, cited document 1 describes that an individual ID number is printed in advance on the sample to be inspected, and the ID printed on the sample to be inspected is measured. A method is disclosed in which an ID number identification device provided in the apparatus is used to read the ID number, and an inspection recipe and inspection results of a standard sample obtained from a host computer according to the read ID are used for inspection of the sample to be inspected.

As described above, in the conventional method, a rotation operation and a horizontal movement operation of the measurement stage are performed in order to sequentially move the measurement point directly below the measurement probe according to the content shown in the recipe data.

The angle control of the rotating mechanism is often performed by a servo motor, and the angle control accuracy is generally about ±0.05° with respect to the command. The angle deviation of ±0.05° shown in the angle control accuracy above causes a deviation in the stop position on the circumference relative to the radius, and the amount of deviation in the stop position is the length of the arc obtained from the distance and angle in the radial direction. . Even if the angle control accuracy of the rotation mechanism is constant, the length of the arc, that is, the amount of deviation of the stop position increases depending on the distance in the radial direction. Normally, silicon single crystal wafers show the same measured resistivity even if there is a slight angular deviation as long as the distance in the radial direction is the same. If eccentricity occurs during cylindrical grinding of a single crystal ingot, the resistivity may differ depending on the angle even if the distance in the radial direction is the same. Although we would like to measure wafer resistivity more accurately even for wafers that have eccentricity during cylindrical grinding, the variation in the stop position caused by the stage rotation as described above may affect measurement position accuracy and wafer resistivity measurement accuracy. There was a problem that the system was not stable.

Japanese Patent Application Publication No. 2003-59994 Japanese Patent Application Publication No. 2000-114327

As mentioned above, even if the rotation angle control accuracy of the stage rotation operation performed to control the resistivity measurement position of the wafer is constant, the distance in the radial direction of the measurement point from the center at that time is There was a problem in that the error in the actual stopping position changed due to r.

For example, the error in the stop position is equal to the arc length determined by the distance r in the radial direction of the measurement point from the center and the rotation angle error θ', and can be expressed as 2πr×θ'/360.

Further, the angle control of the rotation mechanism is usually performed by a servo motor, and the angle control accuracy of the servo motor is generally about ±0.05° with respect to a command. For example, if an error of +0.05° occurs in the rotation angle, the error in the actual stopping position that occurs at that time will be 0.09 mm when the distance in the radial direction is 100 mm, and 0.09 mm when the distance in the radial direction is 150 mm. It will be 13mm. In this way, even if the angle control error θ' of the rotating mechanism is constant, the stop position deviation amount increases depending on the distance r in the radius of the measurement point.

As mentioned earlier, the resistivity of silicon single crystal wafers usually changes concentrically from the center, and as long as the distance in the radial direction is the same, even if there is some angular deviation, the measured resistivity will change. indicate the same value. However, if eccentricity occurs during cylindrical grinding of a silicon single crystal ingot during the process of processing the single crystal into a wafer, the resistivity may differ depending on the angle even if the distance in the radial direction is the same.

Silicon single-crystal wafers obtained by slicing ingots that have been eccentric during the cylindrical grinding are susceptible to stoppage due to stage rotation angle errors, especially at locations on the wafer periphery where the distance r in the radial direction of the measurement point is large. The positional error has a large influence on the measured value, and is a factor in reducing the accuracy of resistivity measurement, resulting in the problem that the accuracy of wafer resistivity measurement is unstable.

The present invention has been made to solve the above problems, and can reduce variations in measurement positions in silicon single crystal wafer resistivity measurement, and can further stabilize the measurement accuracy of silicon single crystal wafer resistivity. The object of the present invention is to provide a method for measuring the resistivity of silicon single crystal wafers.

In order to solve the above problems, the present invention provides a resistivity measurement method for measuring the resistivity of a silicon single crystal wafer by a four-probe method, comprising:
The method includes the steps of creating a measurement recipe, and measuring the resistivity of the silicon single crystal wafer at a plurality of measurement points according to the measurement recipe,
The step of creating the measurement recipe includes:
a substep of acquiring positional information of the plurality of measurement points on the silicon single crystal wafer;
Based on the positional information, a measurement recipe regarding the measurement order of the plurality of measurement points is created so that the movement of rotating the silicon single crystal wafer is minimized when measuring resistivity at the plurality of measurement points. A method for measuring the resistivity of a silicon single crystal wafer is provided, the method comprising the steps of:

By doing this, it is possible to minimize the rotational movement of the silicon single crystal wafer that occurs for each measurement at each measurement point, thereby reducing measurement position deviation due to rotational errors and stabilizing measurement accuracy. can be done. That is, the method for measuring resistivity of silicon single crystal wafers of the present invention can reduce variations in measurement positions in silicon single crystal wafer resistivity measurements, and can further stabilize the measurement accuracy of silicon single crystal wafer resistivity. .

In the substep of creating the measurement recipe, based on the position information, select the measurement order that minimizes the operation of rotating the silicon single crystal wafer when measuring resistivity at the plurality of measurement points. Preferably, the measurement recipe is created by extracting a measurement order that minimizes the movement distance of the silicon single crystal wafer.

By doing this, it is possible to minimize the horizontal movement of the silicon single crystal wafer that occurs each time a measurement is made at each measurement point, thereby reducing measurement position deviations due to horizontal movement errors and improving measurement accuracy. Further stability can be achieved and measurement time can also be shortened.

As described above, the method for measuring resistivity of silicon single crystal wafers of the present invention can reduce variations in measurement positions in silicon single crystal wafer resistivity measurements, and further stabilize the measurement accuracy of silicon single crystal wafer resistivity. be able to. Therefore, by using the method for measuring the resistivity of silicon single crystal wafers of the present invention, it is possible to meet the demands for finer size and higher yield in the manufacture of semiconductor devices, for example.

1 is a schematic diagram showing an example of a resistivity measuring device that can be used in the method for measuring resistivity of a silicon single crystal wafer of the present invention. FIG. 3 is a flow diagram of a method for measuring resistivity of a silicon single crystal wafer according to the present invention. FIG. 2 is a schematic diagram showing a part of an example of a step of measuring resistivity in a method for measuring resistivity of a silicon single crystal wafer according to the present invention. It is a schematic diagram showing another part of an example of the step of measuring resistivity in the resistivity measuring method of a silicon single crystal wafer of the present invention. It is a schematic diagram showing still another part of an example of the step of measuring resistivity in the resistivity measuring method of a silicon single crystal wafer of the present invention.

As mentioned above, it is necessary to develop a method for measuring the resistivity of silicon single crystal wafers that can reduce the variation in the measurement position of silicon single crystal wafer resistivity measurements and stabilize the measurement accuracy of silicon single crystal wafer resistivity. It was wanted.

As a result of intensive study on the above-mentioned problem, the present inventors obtained positional information of multiple measurement points of a silicon single crystal wafer in advance, and based on this positional information, the operation of rotating the silicon single crystal wafer was performed. By determining the measurement order of the measurement points so that the minimum The present invention has been completed based on the discovery that variations can be reduced and, in turn, the measurement accuracy of silicon single crystal wafer resistivity can be stabilized.

That is, the present invention is a resistivity measuring method for measuring the resistivity of a silicon single crystal wafer by a four-probe method,
The method includes the steps of creating a measurement recipe, and measuring the resistivity of the silicon single crystal wafer at a plurality of measurement points according to the measurement recipe,
The step of creating the measurement recipe includes:
a substep of acquiring positional information of the plurality of measurement points on the silicon single crystal wafer;
Based on the positional information, a measurement recipe regarding the measurement order of the plurality of measurement points is created so that the movement of rotating the silicon single crystal wafer is minimized when measuring resistivity at the plurality of measurement points. 1 is a method for measuring resistivity of a silicon single crystal wafer, characterized in that it includes substeps.

Note that Patent Document 2 discloses that a wafer eccentricity detection sensor measures the distance of the periphery of the semiconductor wafer from the center of the measurement stage over one circumference to detect a positional error of the semiconductor wafer with respect to the measurement reference position of the measurement stage. A semiconductor wafer resistivity measuring device is disclosed that measures resistivity by bringing a four-point probe into contact with a position that takes into account a correction value calculated from a positional error. However, Patent Document 2 does not focus on the rotation angle accuracy of the wafer resistivity measuring device, and in order to reduce this influence, the measurement recipe may be optimized to a measurement order that minimizes the rotational movement of the wafer. Not disclosed.

Hereinafter, the present invention will be explained in detail with reference to the drawings, but the present invention is not limited thereto.

First, with reference to FIG. 1, an example of a resistivity measuring device that can be used in the method for measuring resistivity of a silicon single crystal wafer of the present invention will be described. However, the method for measuring the resistivity of a silicon single crystal wafer according to the present invention can also be carried out in an apparatus different from the apparatus shown in FIG.

The wafer resistivity measurement apparatus 10 shown in FIG. , and a measurement recipe output section 9.

The measurement stage 2 is configured so that the silicon single crystal wafer 1 to be measured is placed thereon. The stage drive mechanism section 3 is configured to control the drive 4 of the measurement stage 2. More specifically, the stage drive mechanism section 3 includes a stage rotation mechanism section 31 and a stage horizontal movement mechanism section 32. The stage rotation mechanism section 31 is configured to rotate the measurement stage 2 along an arrow 41 about the center of the stage. The stage horizontal movement mechanism section 32 is configured to move the measurement stage 2 in a horizontal direction 42. That is, the drive 4 of the measurement stage 2 includes rotation 41 and horizontal movement 42 .

The measurement probe 5 is configured to come into contact with each measurement point on the silicon single crystal wafer 1 and measure the resistivity at that measurement point. The probe elevating mechanism section 6 is configured to lower the measurement probe 5 to bring it into contact with the silicon single crystal wafer 1 during measurement, and to raise the measurement probe 5 to separate it from the silicon single crystal wafer 1 after measurement. There is. The resistivity measuring section 8 is configured to supply a current for measuring resistivity to the measurement probe 5 via a wiring 85 and to detect the resistivity by receiving a voltage from the silicon single crystal wafer 1. There is. Further, the resistivity measuring section 8 is also configured to control the raising and lowering 51 of the measurement probe 5 by the probe raising and lowering mechanism section 6 via the wiring 86.

The stage drive mechanism control unit 7 is configured to control the rotation 41 of the measurement stage 2 by the stage rotation mechanism 31 and the horizontal movement 42 of the measurement stage 2 by the stage horizontal movement mechanism 32 via wiring 71 and 72. has been done. The measurement recipe output unit 9 is configured to input the measurement recipe created in the method for measuring resistivity of a silicon single crystal wafer of the present invention to the stage drive mechanism control unit 7 and control the drive 4 .

The wafer resistivity measurement apparatus 10 shown in FIG. 1 may further include each component included in the sample inspection apparatus described in Patent Document 1, for example. For example, the wafer resistivity measuring device 10 may further include a loader and an unloader in order to sequentially measure the resistivity of a plurality of silicon single crystal wafers 1. The wafer resistivity measuring device 10 shown in FIG. 1 also includes a device for printing IDs on a plurality of silicon single crystal wafers 1, a device for reading the IDs, and a host configured to manage the IDs and reflect them in the measurement recipe. A computer can also be included.

Next, the method for measuring the resistivity of a silicon single crystal wafer according to the present invention will be specifically explained with reference to FIG.

The resistivity measuring method of a silicon single crystal wafer of the present invention is shown in FIG. 2, and includes a step S1 of creating a measurement recipe, and a step S2 of measuring the resistivity of a silicon single crystal wafer at a plurality of measurement points according to the created measurement recipe. including.

Furthermore, step S1 of creating a measurement recipe includes a substep S1-1 of acquiring position information of a plurality of measurement points on a silicon single crystal wafer, and a step S1 of acquiring position information of a plurality of measurement points on a silicon single crystal wafer. The method includes a substep S1-2 of creating a measurement recipe regarding the measurement order of a plurality of measurement points so that the operation of rotating the silicon single crystal wafer when measuring resistivity at the measurement points is minimized.

In sub-step S1-2 of creating a measurement recipe, based on the position information acquired in sub-step S1-1, the operation of rotating the silicon single crystal wafer is minimized when measuring resistivity at multiple measurement points. It is preferable to extract the measurement order in which the movement distance of the silicon single crystal wafer is the minimum from among the measurement orders and create a measurement recipe.

In the present invention, as disclosed in Patent Document 1, for example, an ID is printed on a silicon single crystal wafer that is a sample to be inspected, the ID is read and checked by a host computer, and the host computer writes a measurement recipe based on the ID. Depending on the management, automatic continuous measurement of a plurality of silicon single crystal wafers may be performed.

Next, a specific example will be described in which the method of measuring the resistivity of a silicon single crystal wafer according to the present invention is carried out using the wafer resistivity measuring apparatus 10 shown in FIG.

First, step S1 of creating a measurement recipe is performed. Details of this step S1 will be described later.

Next, step S2 is performed in which the resistivity of the silicon single crystal wafer is measured at a plurality of measurement points according to the created measurement recipe. Hereinafter, an embodiment of step S2 will be described with reference to FIGS. 3 to 5.

First, according to the measurement recipe created in step S1, as shown in FIG. 3, the position of the measurement point 11 on the silicon single crystal wafer 1 is specified.

As a method for specifying the position of the measurement point 11, a distance value in the radial direction when the center of the measurement stage 2 is set to 0 mm: r [mm], and a reference line 21 passing through the center of the stage on the measurement stage 2 are determined. A method is used in which the position of the measurement point 11 is specified using two values: θ [°]: the angle formed by the reference line 21 and the straight line 13 connecting the center of the stage and the measurement point 11. The measurement stage 2 is normally set on the assumption that the silicon single crystal wafer 1 is placed at the center of the measurement stage 2, and the center position of the measurement stage 2 is synonymous with the position of the center 12 of the silicon single crystal wafer 1. becomes. Further, the reference line 21 can be set in any direction passing through the center position, but is preferably located on the notch 14 of the silicon single crystal wafer 1. By setting the two values of distance r and angle θ according to the measurement recipe created in step S1 of the method of the present invention, the position of any measurement point 11 on silicon single crystal wafer 1 can be specified.

Next, as shown in FIG. 4, the measurement stage 2 is rotated 41 by the angle θ°. As a result, the reference line 21 is rotated by θ°, and the position of the measurement point 11 is moved from the original position 11' to the measurement probe 5 on a stroke that horizontally moves 42 the measurement stage 2.

Next, as shown in FIG. 5, the measurement stage 2 is horizontally moved 42 by a distance r [mm] so that the measurement point 11 is located directly below the probe needle 52 of the measurement probe 5.

Next, the measurement probe 5 is lowered by the probe elevating mechanism section 6, and the probe needle 52 is brought into contact with the measurement point 11 of the silicon single crystal wafer 1. In this state, the resistivity at the measurement point 11 of the silicon single crystal wafer 1 is measured using the four-point probe method. After the measurement, the measurement probe 5 is raised by the probe lifting/lowering mechanism section 6.

Next, the measurement at another measurement point 11 is started. At this time, the next measurement point 11 is specified based on the measurement order of the measurement recipe created in step S1.

Next, step S1 of creating a measurement recipe will be explained in detail.

First, as shown in FIG. 2, substep S1-1 is performed to acquire positional information of a plurality of measurement points 11 on silicon single crystal wafer 1. The number of the plurality of measurement points 11 is not particularly limited, but is determined based on specifications and the like.

Next, as shown in FIG. 2, sub-step S1-2 is performed to create a measurement recipe regarding the measurement order of the plurality of measurement points 11.

In sub-step S1-2 for creating a measurement recipe, in detail, the silicon single crystal wafer 1 is rotated when measuring resistivity at a plurality of measurement points 11 based on the position information acquired in sub-step S1-1. A measurement recipe regarding the measurement order of the plurality of measurement points 11 is created so that the number of operations to be performed is minimized. More specifically, in sub-step S1-2, the measurement recipe is created in multiple ways so that the operation of rotating the silicon single crystal wafer 1 (rotation 41 of the measurement stage 2), as described with reference to FIG. 4, is minimized. The measurement order of the measurement points 11 is determined and created.

Furthermore, in sub-step S1-2 for creating a measurement recipe, in the measurement order in which the operation of rotating the silicon single crystal wafer 1 (rotation 41 of the measurement stage 2) is minimized, as described with reference to FIG. A measurement recipe regarding the measurement order of the plurality of measurement points 11 can be created so that the distance of movement of the silicon single crystal wafer 1 (horizontal movement 42 of the measurement stage 2) as described with reference to FIG. 5 is minimized. desirable.

Here, a specific example of step S1 for creating a measurement recipe will be described.

First, as sub-step S1-1, position information of a plurality of measurement points 11 on the silicon single crystal wafer 1 is acquired as shown in Table 1 below. In Table 1, as an example, the center 12 of the silicon single crystal wafer 1 shown in FIG. The positional information of a total of eight measuring points, four at every 90 degrees at positions 100 mm from No. 12 in the radial direction, is sequentially described.

Next, based on the acquired position information shown in Table 1, the measurement order of the plurality of measurement points 11 is determined so that the movement of rotating the silicon single crystal wafer 1 41 is minimized.

For example, based on the positional information of the plurality of measurement points shown in Table 1, the measurement order of the measurement points listed in Table 1 is optimized so that the movement of the rotation 41 of the measurement stage 2 is the minimum necessary, that is, A process for rearranging the measurement order in Table 1 is provided.

To give an example of the sorting method, first, a plurality of measurement points are classified into measurement positions of measurement angles that are on the same straight line. In the case of the measurement points shown in Table 1, there are measurement points where the angle θ shown in Table 2 is set to 0° or 180° (class A: measurement points on the reference line 21), and measurement points where the angle θ shown in Table 3 is set to 0° or 180°. The measurement points can be classified into measurement points whose setting is 90° or 270° (class B: measurement points located on the straight line 22 orthogonal to the reference line 21).

At this time, in each classification, it is preferable to further rearrange the measurement order so that the direction of horizontal movement 42 of measurement stage 2 is constant and the distance of horizontal movement 42 to the next measurement point 11 is the shortest. In other words, based on the acquired position information, the movement distance of the silicon single crystal wafer is minimized in the measurement order that minimizes the movement of rotating the silicon single crystal wafer when measuring resistivity at multiple measurement points. It is desirable to extract the measurement order and create a measurement recipe. For example, as shown in Class A in Table 2 below, it is better to arrange the measurement in the order in which measurements are performed sequentially from the outermost measurement point where the angle θ is 0° to the outermost measurement point where the angle θ is 180°. Desirable from this point of view. Classification B in Table 3 below is also rearranged in the same way.

Next, classification A and classification B are combined so that the minimum value of the angle θ within each classification is in ascending order. In the case of the measurement points in Table 1, as shown in Table 4 below, after classification A where the angle θ is set to 0° or 180°, classification B where the angle θ is set to 90° or 270°. join to. As a result, a measurement recipe with the measurement order shown in Table 4 below is created.

When measuring the resistivity in the order shown in Table 1, the rotation 41 of the measurement stage 2 is required each time it moves to each measurement point 11. Specifically, seven rotations 41 are required.

On the other hand, when performing step S2 of measuring the resistivity of the silicon single crystal wafer 1 at a plurality of measurement points 11 according to the measurement recipe shown in Table 4, θ=180° from the measurement point where θ=0°. Movement to the measurement point does not require rotation and only requires horizontal movement 42 relative to the measurement probe 5, and the same goes for movement from the measurement point where θ=90° to the measurement point where θ=270°. The rotation 41 of the measurement stage 2 is performed once.

In this way, by applying the measurement recipe, which is the optimized recipe data, to resistivity measurement, the operation of rotation 41 of the measurement stage 2, which affects the measurement position accuracy, that is, the operation of rotating the silicon single crystal wafer 1, can be reduced. It is possible to reduce the influence of the rotation 41 of the measurement stage 2 on the measurement position accuracy and ultimately on the resistivity measurement accuracy.

Hereinafter, the present invention will be specifically explained using Examples and Comparative Examples, but the present invention is not limited thereto.

(Example)
The resistivity of a silicon single crystal wafer was measured using the following procedure.

First, a silicon single crystal wafer having a diameter of 300 mm, an n-type conductivity, and a resistivity of about 30 mΩ was prepared as a measurement object. In order to measure this silicon single crystal wafer, there is one point at the center of the silicon single crystal wafer, four points every 90 degrees at 100 mm radially from the center of the silicon single crystal wafer, and 90 degrees at 140 mm radially from the center of the wafer. Recipe data for measuring 9 locations, 4 locations for each degree, was acquired as position information of multiple measurement points. The acquired position information (recipe data) is shown in Table 5 below.

Next, the acquired position information is classified into measurement points where the angle θ is set to 0° or 180° (classification A) and measurement points where the angle θ is set to 90° or 270° (classification B). did. Next, in classification A, the measurement order was rearranged so that the movement distance of the silicon single crystal wafer was minimized. Similarly, in classification B, the measurement order was rearranged so that the movement distance of the silicon single crystal wafer was minimized.

Next, category B was combined after category A so that the minimum value of the angle θ within each category was in ascending order. As a result, a measurement recipe with the measurement order shown in Table 6 below was created.

Next, the resistivity of the silicon single crystal wafer was measured at nine measurement points according to the created measurement recipe. A measurement cycle at nine measurement points was defined as one measurement cycle, and the measurement cycle was repeated five times to confirm the standard deviation of the resistivity measurement results at each measurement point. Data summarizing the resistivity measurements at each measurement position and the standard deviations of the resistivity measurements are shown in Table 7 below.

(Comparative example)
In the comparative example, the resistivity of a silicon single crystal wafer was measured in the same manner as in the example except that the resistivity was measured in the measurement order shown in Table 5. As in the example, one measurement cycle was defined as one round of measurement at nine measurement points, and the measurement cycle was repeated five times to confirm the standard deviation of the resistivity measurement results at each measurement point. Table 8 shows data summarizing the resistivity measurements at each measurement position and the standard deviations of the resistivity measurements.

As is clear from Table 7, the standard deviation value in the example was about 0.05 mΩ at each measurement point, and resistivity measurement could be performed with stable accuracy. In the example, since the resistivity was measured at multiple measurement points according to the measurement recipe created according to the present invention, the silicon single crystal wafer could be rotated only once per measurement cycle. As a result, it is believed that the deviation of the measurement position due to rotation error could be reduced, and that the accuracy of resistivity measurement could be improved.

On the other hand, as is clear from Table 8, in the comparative example, a measurement value variation of about 0.1 to 0.2 mΩ occurred. In the comparative example, the resistivity was measured in the measurement order shown in Table 5 without measuring the resistivity according to the recipe created according to the present invention, so the silicon single crystal wafer was measured seven times per measurement cycle. It is thought that this required rotation, and as a result, a deviation in the measurement position occurred due to a rotation error.

As described above, before resistivity measurement, the position information of multiple measurement points is obtained in advance, and the measurement order is rearranged so that the rotational movement required to move to each measurement point is minimized. By providing this, it was possible to reduce the measurement position shift due to angular error of the silicon single crystal wafer and stabilize the measurement accuracy.

Note that the present invention is not limited to the above embodiments. The above-mentioned embodiments are illustrative, and any embodiment that has substantially the same configuration as the technical idea stated in the claims of the present invention and has similar effects is the present invention. covered within the technical scope of.

DESCRIPTION OF SYMBOLS 1... Silicon single crystal wafer, 2... Measurement stage, 3... Stage drive mechanism section, 4... Drive of measurement stage, 5... Measurement probe, 6... Probe lifting mechanism section, 7... Stage drive mechanism control section, 8... Resistivity Measurement unit, 9... Measurement recipe output unit, 10... Wafer resistivity measuring device, 11... Measurement point, 12... Center of wafer, 13... Straight line connecting the center of wafer and measurement point, 14... Notch, 21... Reference line , 22... Line perpendicular to the reference line, 31... Stage rotation mechanism section, 32... Stage horizontal movement mechanism section, 41... Arrow (rotation), 42... Horizontal direction (horizontal movement), 51... Lifting and lowering of measurement probe, 52... Probe needles, 71, 72, 85 and 86...wiring.

Claims (1)

A resistivity measurement method for measuring the resistivity of a silicon single crystal wafer using a four-point probe method,
The method includes the steps of creating a measurement recipe, and measuring the resistivity of the silicon single crystal wafer at a plurality of measurement points according to the measurement recipe,
The step of creating the measurement recipe includes:
a substep of acquiring positional information of the plurality of measurement points on the silicon single crystal wafer;
Based on the positional information, a measurement recipe regarding the measurement order of the plurality of measurement points is created so that the movement of rotating the silicon single crystal wafer is minimized when measuring resistivity at the plurality of measurement points. and substeps ;
In the substep of creating the measurement recipe, based on the position information, select the measurement order that minimizes the operation of rotating the silicon single crystal wafer when measuring resistivity at the plurality of measurement points. A method for measuring the resistivity of a silicon single crystal wafer, characterized in that the measurement recipe is created by extracting a measurement order in which the movement distance of the silicon single crystal wafer is minimized.

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