JP7355709B2 - Bonding jig and semiconductor device manufacturing method - Google Patents

Description

The present invention relates to a bonding jig and a method for manufacturing a semiconductor device, and for example, to a bonding jig used for sinter bonding and a method for manufacturing a semiconductor device using the bonding jig.

Semiconductor elements such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) using silicon carbide (SiC) substrates have been developed. SiC-MOSFETs have lower element resistance than conventional Si-MOSFETs, are capable of high-speed switching, and can greatly contribute to lower losses in electric railways, electric vehicles, and the like. Furthermore, SiC-MOSFETs can operate in higher temperature environments than Si-MOSFETs.

On the other hand, when mounting a semiconductor chip on a wiring board or the like, solder bonding has conventionally been used to join the semiconductor chip and the wiring board. However, solder joints may not be able to support operation in high-temperature environments required of SiC-MOSFETs. Therefore, the application of sintered bonding is being promoted so that it can cope with high-temperature environments.

In sintered bonding, pressure may be required during bonding, and this pressure causes the sintered material to be spread out at the bonding surface. However, there is a problem in that the sintered material does not spread sufficiently over the joint surface, resulting in reduced heat dissipation. On the other hand, there is a problem in that the sintered material spreads too much and protrudes to the outside of the semiconductor chip, causing a short circuit between the semiconductor chip and the wiring board.

For example, Patent Document 1 discloses a bonding jig that has an opening into which a semiconductor chip can be loosely inserted, and a bonding material escape portion having a larger cross-sectional area than the opening.

Japanese Patent Application Publication No. 2011-216772

In the pressurizing step of sinter joining, defects related to the spreading of the sintered material include a decrease in heat dissipation due to insufficient spreading of the sintered material, and short circuits due to the protrusion of the sintered material.

There are two main types of short circuits caused by the protrusion of the sintered material. The first type is a short circuit caused by the protruding sintered material creeping up to the top surface of the semiconductor chip. The second form is a short circuit due to insufficient pressure being applied to the protruding sintered material, resulting in a decrease in sintered density and the sintered material falling off.

Although the bonding jig in Patent Document 1 described above can prevent short circuits caused by the protruding sintered material falling off, a gap is created around the semiconductor chip. Therefore, there is a risk that the sintered material may creep up onto the upper surface of the semiconductor chip through the gap.

Therefore, in a semiconductor device including a wiring board and a semiconductor chip, it is required to suppress the above-mentioned short circuit when mounting the semiconductor chip on the wiring board by sinter bonding. In other words, there is a need for a technology that improves the reliability of semiconductor devices, and there is a need to develop a bonding jig that can achieve this.

Other objects and novel features will become apparent from the description herein and the accompanying drawings.

A brief overview of typical embodiments disclosed in this application will be as follows.

A joining jig in one embodiment includes a top plate, a pressure member whose upper end is attached to the top plate, and a pressure member whose upper end is attached to the top plate so as to surround the pressure member in a plan view. A first thin plate, a second thin plate, a third thin plate, and a fourth thin plate attached, a cylindrical first support member whose side surface is attached to the lower end of the first thin plate, and a side surface of which is attached to the second thin plate. a cylindrical second support member attached to the lower end of the third thin plate; a cylindrical third support member whose side surface is attached to the lower end of the third thin plate; and a third cylindrical support member whose side surface is attached to the lower end of the fourth thin plate. and a cylindrical fourth support member attached thereto.

Moreover, the joining jig in one embodiment includes a top plate, a pressure member whose upper end portion is attached to the top plate, and a support member surrounding the pressure member in plan view. Here, when the semiconductor chips are sintered and bonded, the upper surface of the semiconductor chip can be pressed by the pressure member while the four side surfaces of the semiconductor chip are in close contact with the support member.

Further, a method for manufacturing a semiconductor device according to an embodiment includes a top plate, a pressure member whose upper end portion is attached to the top plate, and a pressure member whose upper end portion is attached to the top plate so as to surround the pressure member in a plan view. a first thin plate, a second thin plate, a third thin plate and a fourth thin plate attached to the top plate; a cylindrical first support member whose side surface is attached to the lower end of the first thin plate; and a columnar first support member whose side surface is attached to the lower end of the first thin plate; a cylindrical second support member attached to the lower end of the second thin plate; a cylindrical third support member whose side surface is attached to the lower end of the third thin plate; and a cylindrical third support member whose side surface is attached to the fourth thin plate. This is performed using a joining jig including a cylindrical fourth support member attached to the lower end of the joining jig. The method for manufacturing a semiconductor device further includes: (a) an upper surface, a lower surface opposite to the upper surface, a first side surface and a second side surface facing each other in a first direction in a plan view, and a first side surface and a second side surface facing each other in a first direction in a plan view; (b) providing a sintered material on a wiring board; (c) the bottom surface of the semiconductor chip is (d) mounting the semiconductor chip on the sintered material so as to make contact with the sintered material; (d) after the step (c), the pressing member overlaps the semiconductor chip in plan view; arranging the bonding jig above the semiconductor chip; (e) after the step (d), moving the bonding jig close to the semiconductor chip, thereby positioning the first support member on the first side surface and the the second support member is brought into close contact with the second side surface and the wiring board; the third support member is brought into close contact with the third side surface and the wiring board; and the fourth support member is brought into close contact with the third side surface and the wiring board. (f) After the step (e), the bonding jig is brought closer to the semiconductor chip, and while pressing the upper surface of the semiconductor chip with the pressure member, The method includes a step of heating a sintered material to form a sintered layer between at least the lower surface of the semiconductor chip and the wiring board.

According to one embodiment, reliability of a semiconductor device can be improved. Furthermore, it is possible to provide a joining jig that can achieve this.

1 is a cross-sectional view showing a bonding jig and a method for manufacturing a semiconductor device in Embodiment 1. FIG. 1 is a plan view showing a joining jig in Embodiment 1. FIG. FIG. 2 is a cross-sectional view showing a method for manufacturing a semiconductor device following FIG. 1; 1 is a plan view showing a method for manufacturing a semiconductor device in Embodiment 1. FIG. FIG. 5 is a plan view showing a method for manufacturing a semiconductor device following FIG. 4; FIG. 7 is a plan view of main parts showing a joining jig in Embodiment 2. FIG. 7 is a cross-sectional view showing a bonding jig and a method for manufacturing a semiconductor device in Embodiment 3. FIG. 8 is a cross-sectional view showing a method for manufacturing a semiconductor device following FIG. 7. FIG. FIG. 7 is a cross-sectional view showing a bonding jig and a method for manufacturing a semiconductor device in a modification of the third embodiment. 7 is a cross-sectional view showing a bonding jig and a method for manufacturing a semiconductor device in Embodiment 4. FIG. 11 is a cross-sectional view showing a method for manufacturing a semiconductor device following FIG. 10. FIG.

Hereinafter, embodiments will be described in detail based on the drawings. In addition, in all the drawings for explaining the embodiment, members having the same function are given the same reference numerals, and repeated explanation thereof will be omitted. Furthermore, in the following embodiments, descriptions of the same or similar parts will not be repeated in principle unless particularly necessary.

In addition, in the drawings explaining the embodiments, hatching may be added even in plan views, and hatching may be omitted even in cross-sectional views, in order to make the configuration easier to understand. be.

Furthermore, the X direction, Y direction, and Z direction described in the embodiments intersect (orthogonal to) each other. In this application, the Z direction is described as the vertical direction, height direction, or thickness direction of a certain structure. Further, the plane formed by the X direction and the Y direction forms a plane, and is a plane perpendicular to the Z direction. For example, in the present application, when the expression "planar view" is used, it means that a plane constituted by the X direction and the Y direction is viewed from the Z direction.

(Embodiment 1)
<Configuration of joining jig 100>
The joining jig 100 in Embodiment 1 will be described using FIGS. 1 and 2. The joining jig 100 is mainly used to suppress short circuits caused by the protruding sintered material (sintered layer) falling off or creeping up, as described above.

As shown in FIGS. 1 and 2, the joining jig 100 includes a top plate 1, a pressure member 2, thin plates 31-34, and support members 41-44.

The upper end of the pressure member 2 and the upper end of each of the thin plates 31 to 34 are attached to the top plate 1. In plan view, the thin plates 31 to 34 surround the top plate 1 and are provided on each side of the top plate 1.

Each of the support members 41 to 44 has a cylindrical shape, and the side surface of each of the support members 41 to 44 is attached to the lower end of each of the thin plates 31 to 34. Note that the cylindrical shape in this application includes the case of a perfect cylindrical shape and also the case of an elliptical cylindrical shape. That is, in a cross-sectional view perpendicular to the direction in which the support members 41 to 44 extend, the shape of each of the support members 41 to 44 may be a perfect circle or an ellipse.

Further, as shown in FIG. 1, in the first embodiment, the thin plates 31 to 34 are attached in a direction perpendicular to the top plate 1 (Z direction) when viewed in cross section. Furthermore, the support members 41 to 44 are each provided at a lower position than the pressure member 2. In other words, as shown by the broken line in FIG. 1, the distance from the top plate 1 to the center 4a of each of the support members 41 to 44 is greater than the distance from the top plate 1 to the lower end of the pressure member 2. Therefore, during sintering and bonding, the supporting members 41 to 44 can contact the semiconductor chip 5 before the pressing member 2 can.

As shown in FIG. 2, the thin plates 31 and 32 face each other in the X direction, and the thin plates 33 and 34 face each other in the Y direction. Support member 41 and support member 42 extend in the Y direction, and support member 43 and support member 44 extend in the X direction.

As will be described later, during sintering and bonding, the semiconductor chips are pressurized by the support members 41 to 44 by utilizing the deflection of the thin plates 31 to 34. Therefore, in the X direction, the width of each of the thin plates 31 and 32 is designed to be smaller than the width of each of the supporting members 41 and 42, and in the Y direction, the width of each of the thin plates 33 and 34 is designed to be smaller than the width of each of the thin plates 33 and 34. It is designed to be smaller than the width of each of the member 43 and the support member 44.

Further, the top plate 1 and the pressure member 2 are made of, for example, a metal material or carbon. The thin plates 31 to 34 are made of a metal material that is elastic and has high heat resistance. The support members 41 to 44 are made of a highly heat-resistant metal material or carbon. When the supporting members 41 to 44 are made of a metal material, the metal material is made of a material that does not easily react with the metal material contained in the sintered material 6a, which will be described later, and is made of a material that does not melt when heated during sintering and joining. , for example, a noble metal material such as platinum (Pt). This prevents the sintered material 6a and the supporting members 41 to 44 from reacting and being joined to each other during sintering and joining.

<Method for manufacturing semiconductor device 200>
A method for manufacturing the semiconductor device 200 according to the first embodiment will be described below with reference to FIGS. 1 and 3 to 5. The above-described bonding jig 100 is used in the method of manufacturing the semiconductor device 200. The semiconductor device 200 is, for example, a semiconductor module (power module) mounted on a railway vehicle or an automobile body.

As shown in FIG. 1, the semiconductor device 200 includes a semiconductor chip 5 mounted on a wiring board 7, and the wiring board 7 and the semiconductor chip 5 are formed by sintering a sintered material 6a. They are joined by a conjunctiva 6b. Further, the semiconductor chip 5 includes a semiconductor element such as a MOSFET or an IGBT using a SiC substrate, for example. Note that the semiconductor device 200 may further include other semiconductor chips, electronic devices, etc. mounted on the wiring board 7.

As shown in FIGS. 1, 4 and 5, the semiconductor chip 5 has a top surface TS, a bottom surface BS opposite to the top surface TS, a side surface SS1 and a side surface SS2 facing each other in the X direction, and facing each other in the Y direction. It has a side surface SS3 and a side surface SS4.

The sintered material 6a is a paste-like bonding material containing a metal material and a solvent. This metal material is a metal particle (metal powder) from a nanometer level to a micrometer level, and is, for example, copper (Cu) or silver (Ag). Note that during sintering and bonding, the solvent contained in the sintered material 6a is eliminated by heating, so after sintering and bonding, a sintered layer 6b made of the metal material is provided between the wiring board 7 and the semiconductor chip 5. is formed.

Each step included in the method for manufacturing the semiconductor device 200 will be described below.

First, as shown in FIG. 1, a semiconductor chip 5 is prepared, and a sintered material 6a is provided on a wiring board 7. Next, the semiconductor chip 5 is mounted on the sintered material 6a so that the lower surface BS of the semiconductor chip 5 contacts the sintered material 6a.

Next, the bonding jig 100 is placed above the semiconductor chip 5 so that the pressure member 2 overlaps the semiconductor chip 5 in plan view.

In the first embodiment, the support members 41 to 44 are positioned so as to overlap the side surfaces SS1 to SS4 of the semiconductor chip 5, respectively, in a plan view. In other words, half of the support members 41 to 44 (semi-cylindrical bodies) on the pressure member 2 side are located so as to overlap the side surfaces SS1 to SS4 of the semiconductor chip 5, respectively, in a plan view. In other words, in a cross-sectional view, among the side surfaces of each of the support members 41 to 44, the first quarter circle point 4b, which is the lowest end, and the second quarter circle point 4c, which is located on the pressure member 2 side. The curved surfaces included are located directly above the side surfaces SS1 to SS4, respectively.

Next, as shown in FIG. 3, by pressing down the bonding jig 100 and bringing the bonding jig 100 closer to the semiconductor chip 5, the supporting members 41 to 44 are attached to the side surfaces SS1 to SS4 of the semiconductor chip 5 and the wiring board, respectively. Place it in close contact with 7.

In the first embodiment, first, by bringing the bonding jig 100 close to the semiconductor chip 5, half of the support members 41 to 44 (semi-cylindrical bodies) on the pressure member 2 side are brought into contact with the semiconductor chip 5. That is, each curved surface of the supporting members 41 to 44 (the curved surface including the first quadrant point 4b and the second quadrant point 4c) is brought into contact with the semiconductor chip 5. Here, since the support members 41 to 44 are each provided at a lower position than the pressure member 2, the support members 41 to 44 contact the semiconductor chip 5 before the pressure member 2 does.

Next, by bringing the bonding jig 100 closer to the semiconductor chip 5, the supporting members 41 to 44 are brought into close contact with the side surfaces SS1 to SS4, respectively, while bending the thin plates 31 to 34. That is, when the bonding jig 100 is brought close to the semiconductor chip 5, a force is applied to the supporting members 41-44 to push the semiconductor chip 5 outward along the curved surfaces of the supporting members 41-44. Then, the thin plates 31 to 34 are bent and act like leaf springs, so that pressure is applied in the direction from the supporting members 41 to 44 toward the semiconductor chip 5.

Next, by bringing the bonding jig 100 closer to the semiconductor chip 5, the supporting members 41-44 are brought into close contact with the wiring board 7, respectively, while bending the thin plates 31-34. Here, the support members 41 to 44 are brought into close contact with the wiring board 7 while the pressure from the support members 41 to 44 due to the bending of the thin plates 31 to 34 is applied to the semiconductor chip 5.

Next, sinter bonding is performed. The bonding jig 100 is brought closer to the semiconductor chip 5, and the sintered material 6a is heated while pressing the upper surface TS of the semiconductor chip 5 with the pressure member 2. This heat treatment is performed, for example, at a temperature of 300°C or higher and 400°C or lower. As a result, a sintered layer 6b is formed at least between the lower surface BS of the semiconductor chip 5 and the wiring board 7. The sintered layer 6b is made of the metal material contained in the sintered material 6a.

As described above, according to the first embodiment, when the semiconductor chip 5 is sintered and bonded, the four side surfaces SS1 to SS4 of the semiconductor chip 5 are in close contact with the supporting members 41 to 44, and the pressure member 2 The upper surface TS of the semiconductor chip 5 can be pressurized. Thereby, the sintered layer 6b is formed over the entire lower surface BS of the semiconductor chip 5, so that it is possible to suppress a decrease in heat dissipation due to insufficient spread of the sintered material 6a.

Furthermore, the radius of each of the supporting members 41 to 44 in a cross-sectional view is larger than the thickness T1 of the sintered layer 6b and smaller than the sum of the thickness T1 of the sintered layer 6b and the thickness T2 of the semiconductor chip 5. Therefore, during sintering and bonding, the support members 41 to 44 are maintained in close contact with the side surfaces SS1 to SS4.

The sintered layer 6b protrudes from the lower surface BS of the semiconductor chip 5 and is also formed on part or all of the side surface SS1, side surface SS2, side surface SS3, or side surface SS4. That is, the sintered layer 6b is formed so as to creep up toward the upper surface TS side of the semiconductor chip 5, but since the supporting members 41 to 44 are in close contact with the side surfaces SS1 to SS4, the sintered layer 6b ~44 and does not reach the top surface TS.

Therefore, by using the bonding jig 100 in Embodiment 1, it is possible to suppress the short circuit between the wiring board 7 and the top surface TS of the semiconductor chip, and it is possible to improve the reliability of the semiconductor device 200.

Further, the cross section of the end portion of the sintered layer 6b has a shape along the side surfaces of the supporting members 41 to 44, and has a fillet shape. In other words, the cross section of the sintered layer 6b protruding from the lower surface BS has a tapered shape that widens at the bottom so that the thickness of the sintered layer 6b decreases as it moves away from the side surfaces SS1 to SS4.

For example, the wiring board 7 may warp during the formation of the sintered layer 6b. In that case, if the end of the sintered layer 6b is angular, sintering will occur at the angular end. There is a possibility that the stress from the layer 6b will be concentrated and the bonding strength of the sintered layer 6b will be reduced. As described above, since the end portion of the sintered layer 6b has a widening tapered shape, concentration of stress is alleviated, and such a fear can be suppressed.

The minute positional error when the semiconductor chip 5 is mounted on the sintered material 6a will be described below with reference to FIGS. 4 and 5.

Ideally, the semiconductor chip 5 would be mounted on the sintered material 6a without any positional error, but the position of the semiconductor chip 5 may shift slightly. For example, the position of the semiconductor chip 5 may be ± from the design value. There may be a deviation of about 1 mm.

However, if such positional error is within the range overlapping the curved surface of each of the supporting members 41 to 44 (the curved surface including the first quadrant point 4b and the second quadrant point 4c), the thin plates 31 to 44 overlap. The position of the semiconductor chip 5 can be corrected to the normal position by using the deflection of the semiconductor chip 34. That is, as shown in FIG. 4, when the position of the semiconductor chip 5 is shifted, only some of the supporting members 41 to 44 initially come into contact with the side surfaces SS1 to SS4 of the semiconductor chip 5, but eventually As shown by the black arrows in , pressure is applied from the supporting members 41 to 44 to the side surfaces SS1 to SS4, and the positions of the semiconductor chips 5 are corrected to their respective normal positions.

In this way, by using the bonding jig 100 in the first embodiment, the semiconductor chips 5 can be sintered and bonded regardless of the presence or absence of positional errors of the semiconductor chips 5.

Further, the supporting members 41 to 44 are made of a material that does not easily react with the metallic material contained in the sintered material 6a, and are made of a highly heat-resistant metallic material or carbon. It may be made of other materials. For example, the support members 41 to 44 may be made of an elastic body with high heat resistance. Such an elastic body has a higher melting point than the metal material contained in the sintered material 6a, and is, for example, rubber.

(Embodiment 2)
The joining jig 100 according to the second embodiment will be described below using FIG. 6. Note that, below, differences from Embodiment 1 will be mainly explained.

In the second embodiment, four supporting members (fifth to eighth supporting members) are provided in areas corresponding to the four corners of the semiconductor chip 5, and each of the four supporting members has a thin plate (fifth to eighth supporting members). 8th thin plate) is attached. FIG. 6 shows that the fifth thin plate 35 and the fifth support member 45 are provided in a region corresponding to one corner of the semiconductor chip 5.

That is, the joining jig 100 has a fifth thin plate 35 whose upper end is attached to the top plate 1 and a side surface attached to the lower end of the fifth thin plate 35 at a location where the thin plates 31 and 33 are close to each other. It further includes a fifth support member 45 having a cylindrical shape. Although not shown here, the fifth thin plate 35 is also located at locations where the thin plates 32 and 33 are close to each other, where the thin plates 33 and 34 are close to each other, and where the thin plates 31 and 34 are close to each other. Sixth to eighth thin plates such as the above and sixth to eighth support members such as the fifth support member 45 are provided.

The fifth support member 45 and the sixth to eighth support members are each L-shaped cylindrical bodies, and a first cylindrical body extending in the Y direction and a second cylindrical body extending in the X direction are combined. It is a connected cylindrical body. The first cylindrical body and the second cylindrical body are each diagonally cut cylindrical bodies, and the two diagonally cut cylindrical bodies are combined to form the fifth support member 45 and the sixth to eighth support members. .

The orientation of the fifth thin plate 35 is different from the orientation of the thin plate 31 and the thin plate 33, and is inclined at 45 degrees with respect to the orientation of the thin plate 31 and the thin plate 33. Similarly, the orientation of the sixth thin plate is different from the orientation of the thin plates 32 and 33, and is inclined at 45 degrees with respect to the directions of the thin plates 32 and 33. The orientation of the seventh thin plate is different from the orientations of the thin plates 33 and 34, and is inclined at 45 degrees with respect to the directions of the thin plates 33 and 34. The orientation of the eighth thin plate is different from the orientation of the thin plate 31 and the thin plate 34, and is inclined at 45 degrees with respect to the orientation of the thin plate 31 and the thin plate 34.

During sinter bonding, by bringing the bonding jig 100 close to the semiconductor chip 5, the fifth thin plate 35 and the sixth to eighth thin plates are bent, while the fifth supporting member 45 and the sixth to eighth supporting members are bent, respectively. Bring it into close contact with the sides SS1 to SS4. Then, by bringing the bonding jig 100 closer to the semiconductor chip 5, the fifth thin plate 35 and the sixth to eighth thin plates are bent, and the fifth supporting member 45 and the sixth to eighth supporting members are respectively attached to the wiring board 7. Closely contact. As indicated by the black arrows in FIG. 6, pressure is applied toward the semiconductor chip 5 from the fifth support member 45 and the sixth to eighth support members.

When only the supporting members 41 to 44 are provided as in the first embodiment, there is a possibility that the sintered material 6a protrudes from the corners of the semiconductor chip 5. In the second embodiment, the fifth support member 45 and the sixth to eighth support members, and the fifth thin plate 35 and the sixth to eighth thin plates are provided in the area corresponding to the corner of the semiconductor chip 5. . Thereby, it is possible to further suppress the possibility that the sintered material 6a creeps up at the corner of the semiconductor chip 5, causing a short circuit between the wiring board 7 and the upper surface TS of the semiconductor chip 5.

(Embodiment 3)
A method for manufacturing the bonding jig 100 and the semiconductor device 200 according to the third embodiment will be described below with reference to FIGS. 7 and 8. Note that, below, differences from Embodiment 1 will be mainly explained.

In the first embodiment, the thin plates 31 to 34 are attached in a direction perpendicular to the top plate 1 (Z direction) when viewed in cross section. In the third embodiment, as shown in FIG. 7, the thin plates 31 to 34 are inclined from a direction perpendicular to the top plate 1 in a cross-sectional view. That is, the lower ends of each of the thin plates 31 to 34 are located closer to the pressure member 2 than the upper ends of each of the thin plates 31 to 34.

During sinter bonding, the bonding jig 100 is placed above the semiconductor chip 5 so that the pressure member 2 overlaps the semiconductor chip 5 in plan view. Here, in the third embodiment, the supporting members 41 to 44 do not overlap the semiconductor chip 5 in plan view. In other words, the support members 41 to 44 are located away from directly above the side surfaces SS1 to SS4.

As shown in FIG. 8, by bringing the bonding jig 100 close to the semiconductor chip 5, the supporting members 41 to 44 first come into close contact with the wiring board 7, and the thin plates 31 to 34 are bent. Next, by bringing the bonding jig 100 closer to the semiconductor chip 5, the supporting members 41-44 are brought into close contact with the side surfaces SS1-SS4, respectively, while bending the thin plates 31-34. Then, pressure from the supporting members 41 to 44 is applied to the semiconductor chip 5 due to the bending of the thin plates 31 to .

In this manner, in the third embodiment, the supporting members 41 to 44 are approached from the outside of the semiconductor chip 5. Therefore, compared to the first embodiment, the bonding jig 100 of the third embodiment is not suitable for areas where a plurality of semiconductor chips 5 are crowded together. However, the bonding jig 100 of the third embodiment has the advantage that stronger pressure can be easily applied to the semiconductor chip 5 compared to the first embodiment. Therefore, when the distance between the plurality of semiconductor chips 5 is sufficiently wide, the reliability of the semiconductor device 200 can be further improved by applying the bonding jig 100 of the third embodiment.

Further, it is also possible to combine the technology disclosed in Embodiment 3 with the technology disclosed in Embodiment 2.

(Modified example)
FIG. 9 shows a joining jig 100 in a modification of the third embodiment.

In the third embodiment, the thin plates 31 to 34 are flat plates, but as in a modification shown in FIG. 9, the thin plates 31 to 34 may be curved plates that are bent in advance. In other words, the thin plates 31 to 34 may have a curved line when viewed in cross section.

The thin plates 31 to 34 in such a modified example can also be used in the same way as the thin plates 31 to 34 in the third embodiment.

(Embodiment 4)
The method for manufacturing the bonding jig 100 and the semiconductor device 200 according to the fourth embodiment will be described below with reference to FIGS. 10 and 11. Note that, below, differences from Embodiment 3 will be mainly explained.

In the fourth embodiment, as shown in FIG. 10, four elastic bodies are used instead of the four sets of thin plates 31-34 and support members 41-44. The elastic body 81 shown in FIG. 10 corresponds to the thin plate 31 and the support member 41, and the elastic body 82 corresponds to the thin plate 32 and the support member 42. Although not shown, the joining jig 100 in the fourth embodiment further includes an elastic body corresponding to the thin plate 33 and the support member 43, and an elastic body corresponding to the thin plate 34 and the support member 44. Such an elastic body has a higher melting point than the metal material contained in the sintered material 6a, and is, for example, rubber.

Note that the upper end portions of each of the four elastic bodies are attached to the top plate 1. The lower end portion of each of the four elastic bodies corresponds to the shape of the support members 41 to 44, and has a semi-cylindrical shape.

During sinter bonding, the bonding jig 100 is placed above the semiconductor chip 5 so that the pressure member 2 overlaps the semiconductor chip 5 in plan view. Here, in the fourth embodiment, the four elastic bodies do not overlap the semiconductor chip 5 in plan view. In other words, the four elastic bodies are located away from directly above the side surfaces SS1 to SS4.

As shown in FIG. 11, by bringing the bonding jig 100 close to the semiconductor chip 5, first, the four elastic bodies come into close contact with the wiring board 7, and the four elastic bodies become bent. Next, by bringing the bonding jig 100 closer to the semiconductor chip 5, the four elastic bodies are brought into close contact with the side surfaces SS1 to SS4, respectively, while being bent. Then, pressure from the four elastic bodies is applied to the semiconductor chip 5.

In the fourth embodiment, by using such an elastic body, the configuration of the joining jig 100 can be simplified. However, by using an elastic body, there is a risk that the reliability under a high temperature environment for a long period of time will be lower than that of the metal material that constitutes the support members 41 to 44, so in such a case, It is preferable to apply the technique of the third embodiment described above.

Although the present invention has been specifically described above based on the embodiments thereof, the present invention is not limited to the above embodiments, and various changes can be made without departing from the gist thereof.

In addition, some of the contents described in the above embodiments will be described below.

[Additional note 1]
The top plate and
a pressure member whose upper end is attached to the top plate;
a first elastic body, a second elastic body, a third elastic body, and a fourth elastic body whose upper end portions are attached to the top plate so as to surround the pressure member in a plan view;
A method for manufacturing a semiconductor device using a bonding jig comprising:
The lower end portions of each of the first elastic body, the second elastic body, the third elastic body, and the fourth elastic body are connected to the first elastic body, the second elastic body, the third elastic body, and the fourth elastic body. located closer to the pressure member than the upper end of each of the four elastic bodies,
(a) an upper surface, a lower surface opposite to the upper surface, a first side surface and a second side surface facing each other in a first direction in a plan view, and a first side surface and a second side surface facing each other in a second direction intersecting the first direction in a plan view; preparing a semiconductor chip having three side surfaces and a fourth side surface;
(b) a step of providing a sintered material on the wiring board;
(c) mounting the semiconductor chip on the sintered material so that the lower surface of the semiconductor chip contacts the sintered material;
(d) after the step (c), arranging the bonding jig above the semiconductor chip so that the pressure member overlaps the semiconductor chip in plan view;
(e) After the step (d), the first elastic body is brought into close contact with the first side surface and the wiring board by bringing the bonding jig close to the semiconductor chip, and the second elastic body is brought into close contact with the second elastic body. bringing the third elastic body into close contact with the third side surface and the wiring board; bringing the fourth elastic body into close contact with the fourth side surface and the wiring board;
(f) After the step (e), the bonding jig is brought closer to the semiconductor chip, and while the upper surface of the semiconductor chip is pressed by the pressure member, the sintered material is heated, thereby at least the forming a sintered layer between the lower surface of the semiconductor chip and the wiring board;
A method for manufacturing a semiconductor device, comprising:

[Additional note 2]
In the method for manufacturing a semiconductor device according to Supplementary Note 1,
In the step (f), the sintered layer protrudes from the lower surface and is also formed on part or all of the first side, the second side, the third side, or the fourth side,
The cross section of the sintered layer protruding from the lower surface is such that the thickness of the sintered layer decreases as it moves away from the first side, the second side, the third side, or the fourth side. A method for manufacturing semiconductor devices that form a tapered shape with a widening base.

[Additional note 3]
In the method for manufacturing a semiconductor device according to Supplementary Note 1,
The step (e) is
(e6) By bringing the bonding jig close to the semiconductor chip, the first elastic body is brought into close contact with the wiring board, the second elastic body is brought into close contact with the wiring board, and the third elastic body is brought into close contact with the wiring board. bringing the fourth elastic body into close contact with the wiring board;
(e7) After the step (e6), by bringing the bonding jig closer to the semiconductor chip, the first elastic body is brought into close contact with the first side surface while bending the first elastic body, and the second The second elastic body is brought into close contact with the second side surface while the elastic body is bent, the third elastic body is brought into close contact with the third side surface while the third elastic body is bent, and the fourth elastic body is bent. bringing the fourth elastic body into close contact with the fourth side surface while
A method for manufacturing a semiconductor device, including:

[Additional note 4]
In the method for manufacturing a semiconductor device according to Supplementary Note 1,
The first elastic body, the second elastic body, the third elastic body, and the fourth elastic body are each made of a material having a higher melting point than the metal material contained in the sintered material, a semiconductor. Method of manufacturing the device.

[Additional note 5]
The top plate and
a pressure member whose upper end is attached to the top plate;
a first elastic body, a second elastic body, a third elastic body, and a fourth elastic body whose upper end portions are attached to the top plate so as to surround the pressure member in a plan view;
Equipped with
The lower end portions of each of the first elastic body, the second elastic body, the third elastic body, and the fourth elastic body are connected to the first elastic body, the second elastic body, the third elastic body, and the fourth elastic body. The joining jig is located closer to the pressure member than the upper end of each of the four elastic bodies.

1 Top plate 2 Pressure member 4a Center 4b, 4c Quadrant point 5 Semiconductor chip 6a Sintered material 6b Sintered layer 7 Wiring board 31 to 35 Thin plate 41 to 45 Support members 81, 82 Elastic body 100 Bonding jig 200 Semiconductor device BS Bottom surface of semiconductor chip SS1 to SS4 Side surface of semiconductor chip TS Top surface of semiconductor chip

Claims (15)

The top plate and
a pressure member whose upper end is attached to the top plate;
a first thin plate, a second thin plate, a third thin plate, and a fourth thin plate whose upper end portions are attached to the top plate so as to surround the pressure member in a plan view;
a cylindrical first support member whose side surface is attached to the lower end of the first thin plate;
a cylindrical second support member whose side surface is attached to the lower end of the second thin plate;
a cylindrical third support member whose side surface is attached to the lower end of the third thin plate;
a cylindrical fourth support member whose side surface is attached to the lower end of the fourth thin plate;
A joining jig equipped with The joining jig according to claim 1,
the first thin plate and the second thin plate face each other in a first direction in plan view;
The third thin plate and the fourth thin plate face each other in a second direction intersecting the first direction in plan view,
the first support member and the second support member extend in the second direction;
The third support member and the fourth support member are a joining jig, wherein the third support member and the fourth support member extend in the first direction. The joining jig according to claim 2,
a fifth thin plate whose upper end is attached to the top plate at a location where the first thin plate and the third thin plate are close to each other;
a sixth thin plate whose upper end is attached to the top plate at a location where the second thin plate and the third thin plate are close to each other;
a seventh thin plate whose upper end portion is attached to the top plate at a location where the third thin plate and the fourth thin plate are close to each other;
an eighth thin plate whose upper end is attached to the top plate at a location where the first thin plate and the fourth thin plate are close to each other;
a cylindrical fifth support member whose side surface is attached to the lower end of the fifth thin plate;
a cylindrical sixth support member whose side surface is attached to the lower end of the sixth thin plate;
a cylindrical seventh support member whose side surface is attached to the lower end of the seventh thin plate;
a cylindrical eighth support member whose side surface is attached to the lower end of the eighth thin plate;
further comprising;
The orientation of the fifth thin plate is different from the orientation of the first thin plate and the third thin plate,
The orientation of the sixth thin plate is different from the orientation of the second thin plate and the third thin plate,
The orientation of the seventh thin plate is different from the orientation of the third thin plate and the fourth thin plate,
The joining jig, wherein the direction of the eighth thin plate is different from the direction of the first thin plate and the direction of the fourth thin plate. The joining jig according to claim 3,
The fifth support member, the sixth support member, the seventh support member, and the eighth support member each include a first cylindrical body extending in the first direction and a cylindrical body extending in the second direction. A joining jig, which is a joining cylindrical body in which two cylindrical bodies are joined. The joining jig according to claim 1,
The lower end portions of each of the first thin plate, the second thin plate, the third thin plate, and the fourth thin plate are connected to the lower end portions of each of the first thin plate, the second thin plate, the third thin plate, and the fourth thin plate. A joining jig located closer to the pressure member than the upper end. The joining jig according to claim 1,
In a cross-sectional view, the distance from the top plate to the center of the first support member, the center of the second support member, the center of the third support member, or the center of the fourth support member is the distance from the top plate to the center of the fourth support member. A joining jig that is larger than the distance to the bottom end of the pressure member. The top plate and
a pressure member whose upper end is attached to the top plate;
a support member surrounding the pressure member in plan view;
Equipped with
A bonding jig capable of pressurizing an upper surface of the semiconductor chip with the pressure member while keeping four side surfaces of the semiconductor chip in close contact with the support member during sinter bonding of the semiconductor chip. The top plate and
a pressure member whose upper end is attached to the top plate;
a first thin plate, a second thin plate, a third thin plate, and a fourth thin plate whose upper end portions are attached to the top plate so as to surround the pressure member in a plan view;
a cylindrical first support member whose side surface is attached to the lower end of the first thin plate;
a cylindrical second support member whose side surface is attached to the lower end of the second thin plate;
a cylindrical third support member whose side surface is attached to the lower end of the third thin plate;
a cylindrical fourth support member whose side surface is attached to the lower end of the fourth thin plate;
A method for manufacturing a semiconductor device using a bonding jig comprising:
(a) an upper surface, a lower surface opposite to the upper surface, a first side surface and a second side surface facing each other in a first direction in a plan view, and a first side surface and a second side surface facing each other in a second direction intersecting the first direction in a plan view; preparing a semiconductor chip having three side surfaces and a fourth side surface;
(b) a step of providing a sintered material on the wiring board;
(c) mounting the semiconductor chip on the sintered material so that the lower surface of the semiconductor chip contacts the sintered material;
(d) after the step (c), arranging the bonding jig above the semiconductor chip so that the pressure member overlaps the semiconductor chip in plan view;
(e) After the step (d), the first support member is brought into close contact with the first side surface and the wiring board by bringing the bonding jig closer to the semiconductor chip, and the second support member is brought into close contact with the second support member. bringing the third support member into close contact with the third side surface and the wiring board; bringing the fourth support member into close contact with the fourth side surface and the wiring board;
(f) After the step (e), the bonding jig is brought closer to the semiconductor chip, and while the upper surface of the semiconductor chip is pressed by the pressure member, the sintered material is heated, so that at least the forming a sintered layer between the lower surface of the semiconductor chip and the wiring board;
A method for manufacturing a semiconductor device, comprising: The method for manufacturing a semiconductor device according to claim 8,
In the step (f), the sintered layer protrudes from the lower surface and is also formed on part or all of the first side, the second side, the third side, or the fourth side,
The cross section of the sintered layer protruding from the lower surface is such that the thickness of the sintered layer decreases as it moves away from the first side, the second side, the third side, or the fourth side. A method for manufacturing semiconductor devices that form a tapered shape with a widening base. The method for manufacturing a semiconductor device according to claim 8,
In the step (d), a first quadrant point that is the lowest end of each side surface of the first support member, the second support member, the third support member, and the fourth support member; A semiconductor device, wherein curved surfaces including a second quarter circle point located on the pressure member side are located directly above the first side surface, the second side surface, the third side surface, and the fourth side surface, respectively. Production method. The method for manufacturing a semiconductor device according to claim 10,
The step (e) is
(e1) By bringing the bonding jig close to the semiconductor chip, the curved surfaces of each of the first support member, the second support member, the third support member, and the fourth support member are attached to the semiconductor chip. a step of bringing it into contact;
(e2) After the step (e1), the first support member is brought into close contact with the first side surface while the first thin plate is bent by bringing the bonding jig closer to the semiconductor chip, and the second thin plate is brought into close contact with the first side surface. The second support member is brought into close contact with the second side surface while bending the third thin plate, the third support member is brought into close contact with the third side surface while bending the third thin plate, and the second support member is brought into close contact with the third side face while bending the fourth thin plate. 4. Bringing the support member into close contact with the fourth side surface;
(e3) After the step (e2), by bringing the bonding jig closer to the semiconductor chip, the first support member is brought into close contact with the wiring board while bending the first thin plate, and the second thin plate is brought into close contact with the wiring board. The second support member is brought into close contact with the wiring board while being bent, the third support member is brought into close contact with the wiring board while the third thin plate is bent, and the fourth support member is brought into close contact with the wiring board while being bent. a step of closely contacting the wiring board with the wiring board;
A method for manufacturing a semiconductor device, including: The method for manufacturing a semiconductor device according to claim 8,
The lower end portions of each of the first thin plate, the second thin plate, the third thin plate, and the fourth thin plate are connected to the lower end portions of each of the first thin plate, the second thin plate, the third thin plate, and the fourth thin plate. located closer to the pressure member than the upper end;
In the step (d), the first support member, the second support member, the third support member, and the fourth support member include the first side surface, the second side surface, the third side surface, and the fourth side surface. A method for manufacturing semiconductor devices that are located away from directly above the sides. The method for manufacturing a semiconductor device according to claim 12,
The step (e) is
(e4) By bringing the bonding jig close to the semiconductor chip, the first support member is brought into close contact with the wiring board, the second support member is brought into close contact with the wiring board, and the third support member is brought into close contact with the wiring board. bringing the fourth support member into close contact with the wiring board;
(e5) After the step (e4), by bringing the bonding jig closer to the semiconductor chip, the first support member is brought into close contact with the first side surface while bending the first thin plate, and the second thin plate is brought into close contact with the first side surface. The second support member is brought into close contact with the second side surface while bending the third thin plate, the third support member is brought into close contact with the third side surface while bending the third thin plate, and the second support member is brought into close contact with the third side face while bending the fourth thin plate. 4. Bringing the support member into close contact with the fourth side surface;
A method for manufacturing a semiconductor device, including: The method for manufacturing a semiconductor device according to claim 8,
The radius in a cross-sectional view of each of the first support member, the second support member, the third support member, and the fourth support member is larger than the thickness of the sintered layer, and A method for manufacturing a semiconductor device, wherein the thickness is smaller than the total thickness of the semiconductor chips. The method for manufacturing a semiconductor device according to claim 8,
The first support member, the second support member, the third support member, and the fourth support member are each made of a material that does not melt due to heating of the sintered material in the step (f), a semiconductor. Method of manufacturing the device.

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