JP7360906B2 - Manufacturing method of semiconductor device and semiconductor device - Google Patents

Description

The present invention relates to a method for manufacturing a semiconductor device and a semiconductor device in which the semiconductor element is a Hall element.

Semiconductor devices whose semiconductor elements are Hall elements are used in various electronic devices such as smartphones. For example, when controlling a camera module of a smartphone, by using the semiconductor device, it is possible to adjust the position of the lens and realize an autofocus function. Patent Document 1 discloses an example of a semiconductor device including a pellet of a semiconductor element, which is a Hall element.

International Publication No. 2014/091714

Incidentally, as electronic devices using semiconductor devices in which the semiconductor element is a Hall element become thinner, the semiconductor devices are also required to have a lower height.

The present invention has been proposed in view of the above-mentioned circumstances, and an object of the present invention is to provide a method for manufacturing a semiconductor device and a semiconductor device that can reduce the height of a semiconductor device including a semiconductor element of a Hall element. .

In order to solve the above-mentioned problems, a method for manufacturing a semiconductor device according to this application includes a step of providing an electroformed substrate in which an electrode is formed by electroforming on the main surface of a metal plate, and a step of providing a semiconductor device on the main surface of the metal plate. A step of mounting the element, a step of connecting the top surface of the electrode and the top surface of the mounted semiconductor element with a bonding wire, and a step of sealing the main surface of the metal plate with resin so as to cover the electrode, semiconductor element, and bonding wire. a step of peeling off the metal plate of the electroformed substrate from the sealing resin covering the electrodes, semiconductor elements, and bonding wires, and a step of dicing the sealing resin after peeling off the metal plate of the electroformed substrate. The process includes a step of separating the material into individual pieces.

In the step of connecting with the bonding wire, the connection may be performed in order from the top surface of the electrode to the top surface of the semiconductor element. In the step of mounting the semiconductor element on the electroformed substrate, the semiconductor element may be attached to the main surface of the electroformed substrate using an adhesive layer formed on the bottom surface of the semiconductor element. After the step of peeling off the electroformed substrate and before the step of dicing the sealing resin, the method may further include a step of grinding the sealing resin to reduce its height.

In the step of mounting the semiconductor element, the semiconductor element may be mounted so that the side surfaces of the semiconductor element face adjacent electrodes. In the step of mounting the semiconductor element, the semiconductor element may be mounted such that the ridge lines where the side surfaces of the semiconductor element intersect with adjacent electrodes face each other.

In the step of dicing the sealing resin, the electrode may be at a predetermined depth from the side surface of the sealing resin formed by dicing. In the step of dicing the sealing resin, the cross section of the electrode may be exposed from the side surface of the sealing resin formed by dicing.

The semiconductor element may be a Hall element. The metal plate of the electroformed substrate may be made of stainless steel.

The electrode may include gold, nickel, and silver layered in this order, with the nickel layer being thicker than the gold and silver layers. The electrode may include gold, nickel, copper, and silver layered in this order, with the nickel layer being thicker than the gold and silver layers.

A semiconductor device according to this application includes a semiconductor element, an electrode arranged to surround the semiconductor element, a bonding wire connecting the top surface of the semiconductor element and the top surface of the electrode, a bottom surface and side surfaces, and a bonding wire , a semiconductor element disposed along the bottom surface, and a sealing resin that covers and seals an electrode disposed along the side surface so that the electrode is exposed from the bottom surface, the electrode is placed on the bottom surface of the sealing resin. A plurality of metal layers are laminated from the exposed bottom surface to the top surface.

The electrode may include gold, nickel, and silver layered in this order, with the nickel layer being thicker than the gold and silver layers. The electrode may include gold, nickel, copper, and silver layered in this order, with the nickel layer being thicker than the gold and silver layers.

The sealing resin may cover the electrode so that the electrode is at a predetermined depth from the side surface of the sealing resin. The sealing resin may cover the electrode so that the electrode is exposed from the side surface of the sealing resin. The electrode may protrude from the top surface of the electrode by a predetermined thickness toward the inside of the sealing resin than the side surface of the electrode. The semiconductor element may be a Hall element.

According to this invention, it is possible to reduce the height of a semiconductor element including a Hall element semiconductor element.

FIG. 1 is a diagram showing a semiconductor device according to a first embodiment. FIG. 3 is a cross-sectional view showing steps in the method for manufacturing a semiconductor device according to the first embodiment. FIG. 3 is a cross-sectional view showing steps of the method for manufacturing the semiconductor device of the first embodiment following FIG. 2; FIG. 3 is a cross-sectional view showing steps in the method for manufacturing an electroformed substrate according to the first embodiment. FIG. 7 is a cross-sectional view showing an electroformed substrate according to a modification of the first embodiment. FIG. 3 is a cross-sectional view showing a process of forming a die attachment film on a Hall element. FIG. 7 is a diagram showing a semiconductor device according to a modification of the first embodiment. FIG. 7 is a diagram showing a semiconductor device according to a second embodiment. FIG. 7 is a cross-sectional view showing steps of a method for manufacturing a semiconductor device according to a second embodiment. FIG. 10 is a cross-sectional view showing steps of the method for manufacturing a semiconductor device according to the second embodiment following FIG. 9; FIG. 7 is a cross-sectional view showing steps of a method for manufacturing an electroformed substrate according to a second embodiment. FIG. 7 is a sectional view showing an electroformed substrate according to a modification of the second embodiment. FIG. 7 is a diagram showing a semiconductor device according to a modification of the second embodiment.

Hereinafter, a method for manufacturing a semiconductor device and a semiconductor device according to this embodiment will be described in detail with reference to the drawings. In this embodiment, a semiconductor device in which electrodes are arranged at a predetermined depth from the side surface of the sealing resin and the electrodes are not exposed from the side surface of the sealing resin is described in the first embodiment. The semiconductor device of the first embodiment and the semiconductor device of the second embodiment will be described in order, with a semiconductor device of the first embodiment and a second embodiment as the second embodiment.

(First embodiment)
FIG. 1 is a diagram showing a semiconductor device 1 according to a first embodiment. 1(a) is a perspective view of the semiconductor device 1, FIG. 1(b) is a plan view of the semiconductor device 1, and FIG. 1(c) is a semiconductor device taken along cutting line II in FIG. 1(b). 1 is a sectional view of FIG. 1(a) to FIG. 1(c) are drawn with the sealing resin 19 omitted in order to clarify the internal structure of the semiconductor device 1. In the semiconductor device 1 of the first embodiment, the electrode 11 is arranged at a predetermined depth from the side surface 19b of the sealing resin 19, is covered by the side surface 19b of the sealing resin 19, and is covered with the side surface 19b of the sealing resin 19. It is not exposed from.

The semiconductor device 1 of the first embodiment has a slightly flat, substantially rectangular parallelepiped shape, and includes a Hall element 13 having a substantially square shape in plan view as a semiconductor element. In the Hall element 13, a die attachment film 14 is formed on the bottom surface 13a, and four electrode pads 13e are formed on the top surface 13d. The Hall element 13 may have, for example, a side of 100 to 300 μm in a plan view, and a height of 30 to 100 μm. Further, the die attachment film 14 may have a thickness in the range of 1 to 20 μm.

The semiconductor device 1 has four electrodes 11 that are lower than the Hall element 13 and are arranged so as to surround the Hall element 13 from all sides. The electrode 11 is composed of a first layer 11a made of gold (Au), a second layer 11b made of nickel (Ni), and a third layer 11c made of silver (Ag), which are laminated in this order. and thicker than the third layer 11c. Further, the electrode 11 has a mushroom-like shape, with a portion having a predetermined thickness protruding from the top surface 11f over a predetermined length from the side surface 11e in the width direction. The protruding portion is composed of a second layer 11b and a third layer 11c, and the third layer 11c covers the second layer 11b.

The electrode 11 may have a diameter in the range of 80 to 200 μm and a height in the range of 30 to 80 μm. The first layer 11a of the electrode 11 may have a thickness in the range of 0.01 to 0.2 μm, the second layer 11b may have a thickness in the range of 28 to 76 μm, and the third layer 11c may have a thickness in the range of 28 to 76 μm. The thickness may be in the range of 1 to 5 μm. The portion that protrudes from the top surface 11f of the electrode 11 in the width direction may have a thickness in a range of 5 to 40 μm, and a protruding length in a range of 5 to 40 μm.

The electrode 11 and the Hall element 13 are connected by a bonding wire 15. The bonding wire 15 has a predetermined diameter and is made of gold. The bonding wire 15 is connected to the top surface 11f of the electrode 11 via a metal ball by ball bonding so as to stand up, and the side surface of the bonding wire 15 is in contact with the electrode pad 13e on the top surface 13d of the Hall element 13 adjacent to the electrode 11. It's connected like that. The maximum height H12 of the bonding wire 15 from the top surface 11f of the electrode 11 may be in the range of 42 to 60 μm.

The electrode 11 and the Hall element 13 connected by the bonding wire 15 are sealed with a sealing resin 19. The sealing resin 19 may be made of electrically insulating resin, such as epoxy resin or polyimide resin. The sealing resin 19 forms a slightly flat, substantially rectangular parallelepiped-shaped package having a substantially rectangular shape in plan view, seals the Hall element 13 approximately in the center of the package, and encapsulates the die formed on the bottom surface 13a of the Hall element 13. The attachment film 14 is exposed from the bottom surface 19a of the sealing resin 19.

The package formed by the sealing resin 19 may have a long side in a range of 600 to 1000 μm, a short side in a range of 300 to 600 μm, and a height H1 in a range of 80 to 150 μm in plan view. It may be in Further, the height H11 from the bottom surface 19a of the package to the top surface 11f of the electrode 11 corresponds to the height of the electrode 11, and may be in the range of 30 to 80 μm as described above. The height H13 from the highest part of the bonding wire 15 to the top surface 19c of the package may be in the range of 10 to 40 μm.

Two electrodes 11 are arranged along opposite long sides so that the electrodes 11 are located approximately symmetrically to the perpendicular bisectors of the long and short sides of the sealing resin package, which has a substantially rectangular shape in plan view. It is located. The electrode 11 is arranged at a predetermined depth from the side surface 19b of the sealing resin 19, is covered by the side surface 19b of the sealing resin 19, and is not exposed from the side surface 19b of the sealing resin 19. The bottom surface 11d of the electrode 11 is exposed from the bottom surface 19a of the package of the sealing resin 19. The bottom surface 11d of the electrode 11 exposed from the bottom surface 19a of the sealing resin 19 may be covered with a metal film. This metal film may be tin (Sn).

The Hall element 13, which has a substantially square shape in plan view, is arranged so that the side surface 13b faces the adjacent electrode 11. In other words, the ridgeline 13c formed by the intersection of the side surfaces 13b of the Hall element 13 is arranged so as to be far from the adjacent electrode 11.

In the semiconductor device 1 of the first embodiment, the electrode 11 is not exposed on the side surface 19b of the package of the sealing resin 19. Therefore, when the semiconductor device 1 is attached to a substrate, there is no possibility of short-circuiting with other components in the lateral direction through the side surface 19b of the sealing resin 19, and stable operation of the semiconductor device 1 can be ensured. can.

In the semiconductor device 1, the bottom surface 13a of the Hall element 13 is covered with the die attachment film 14 exposed on the bottom surface 19a of the sealing resin 19. Since the die attachment film 14 can be formed thinly, the height of the semiconductor device 1 can be reduced.

Further, the bonding wire 15 connecting the Hall element 13 and the electrode 11 is connected to the top surface 11f of the electrode 11 lower than the top surface 13d of the Hall element 13 by ball bonding, but the bonding wire 15 connecting the Hall element 13 and the electrode 11 is connected to the top surface 11f of the electrode 11 lower than the top surface 13d of the Hall element 13, but the The side surface of the bonding wire 15 is connected to the top surface 13d of the element 13. Therefore, the height secured for the bonding wires 15 is suppressed, and the height of the semiconductor device 1 is reduced.

In the semiconductor device 1, the Hall element 13 is arranged so that the side surface 13b faces the adjacent electrode 11. Since the Hall element 13 can be arranged so that the ridgeline 13c where the side surfaces 13b intersect is accommodated in the gap between the adjacent electrodes 11, the semiconductor device 1 can be made smaller.

FIG. 2 is a cross-sectional view showing the steps of the method for manufacturing the semiconductor device 1 of the first embodiment. In the following method of manufacturing a semiconductor, components common to those of the semiconductor device 1 shown in FIG. 1 are given the same reference numerals to clarify the correspondence.

In the step shown in FIG. 2A, an electroformed substrate 20 is provided, in which an electrode 11 is formed on the main surface 21a of a metal plate 21 by electroforming. In the first embodiment, the electrodes 11 constituting the semiconductor device 1 are individually formed on the electroformed substrate 20 from the beginning. The metal plate 21 is made of stainless steel, and the electrode 11 is arranged at a predetermined position on the main surface 21a of the metal plate 21. The electrode 11 has a predetermined diameter and a predetermined height, and is configured by laminating a first layer 11a made of Au, a second layer 11b made of Ni, and a third layer 11c made of Ag. A portion of the electrode 11 having a predetermined thickness from the top surface 11f protrudes from the side surface 11e over a predetermined length in the width direction. The protruding portion is composed of a second layer 11b and a third layer 11c, and the third layer 11c covers the second layer 11b.

In the step shown in FIG. 2(b), the Hall element 13 is mounted on the electroformed substrate 20 provided in the step of FIG. 2(a). The Hall element 13, which has a slightly flat, substantially rectangular parallelepiped shape and is substantially square in plan view, is installed such that each side surface 13b faces each of the four adjacent electrodes 11. An adhesive layer of an adhesive die attachment film 14 having a predetermined thickness is formed in advance on the bottom surface 13a of the Hall element 13, and the Hall element 13 is attached to the main surface 21a of the metal plate 21 by the die attachment film 14. The die attachment film 14 is heated and hardened before the next step of connecting the bonding wires 15 shown in FIG. 2(c).

In the step shown in FIG. 2(c), the Hall element 13 mounted on the electroformed substrate 20 and the electrode 11 in the step shown in FIG. 2(b) are connected with the bonding wire 15. The bonding wire 15 is connected to the top surface 11f of the electrode lower than the top surface 13d of the Hall element 13 by ball bonding so as to stand up through a metal ball, and then bonded to the electrode pad 13e of the Hall element 13 adjacent to the electrode 11. The wires 15 are connected so that their sides are in contact with each other.

FIG. 3 is a cross-sectional view showing the manufacturing process of the semiconductor device 1 of the first embodiment following FIG. 2. As shown in FIG. In the step shown in FIG. 3(a), the metal plate of the electroformed substrate 20 is placed so as to cover the Hall element 13 and the electrode 11, and the bonding wire 15 that connected the Hall element 13 and the electrode 11 in the step of FIG. 2(c). A sealing resin 19 is formed up to a predetermined height from the main surface 21a of 21. After the process of peeling off the metal plate 21 of the electroformed substrate 20 from the sealing resin 19 shown in FIG. The process may include a step of grinding the sealing resin 19 so that the sealing resin 19 is ground.

In the step shown in FIG. 3(b), the metal plate 21 of the electroformed substrate 20 is peeled off from the sealing resin 19 formed on the main surface 21a of the metal plate 21 of the electroformed substrate 20. For this purpose, a tape (not shown) is attached to the upper surface 19c of the sealing resin 19, and the sealing resin 19 and the attached tape are peeled off from the metal plate 21 of the electroformed substrate 20. The peeling exposes the bottom surface 19a of the sealing resin 19. The bottom surface 11d of the electrode 11 is exposed on the bottom surface 19a of the sealing resin 19.

In the step shown in FIG. 3C, the sealing resin 19 is diced into individual pieces. Regarding the sealing resin 19 from which the metal plate 21 of the electroformed substrate 20 is peeled off in the step of FIG. A blade is used to separate a predetermined position between the Hall elements 13 and between adjacent electrodes 11 so that the electrodes 11 are not damaged. The sealing resin 19 is cut into pieces to obtain the semiconductor device 1. The dicing process is performed with a tape attached to the upper surface 19c of the sealing resin 19, and the tape is peeled off after the dicing is completed. Therefore, the semiconductor device 1 cut into individual pieces by dicing does not fall apart. After dicing, the method may further include a step of forming a metal film on the bottom surface 11d of the electrode 11 exposed from the bottom surface 19a of the sealing resin 19. This metal film may be Sn.

In the method for manufacturing the semiconductor device 1 according to the first embodiment, in the step of dicing the sealing resin 19, the Hall element 13 and the electrode 11 are separated so that the electrode 11 is at a predetermined depth from the cross section of the sealing resin 19. The sealing resin 19 between the two is separated. Dicing is easy because it is sufficient to cut off the sealing resin 19 and there is no need to cut off the electrode 11 made of metal.

Further, in the method for manufacturing the semiconductor device 1, the electrode 11 is formed on the main surface 21a of the metal plate 21 of the electroformed substrate 20 by electroforming. Therefore, the electrode 11 can be formed with a desired height and configuration.

In the semiconductor device 1, the Hall element 13 sealed with the sealing resin 19 is attached to the main surface 21a of the metal plate 21 of the electroformed substrate 20 by the die attachment film 14 formed on the bottom surface 13a. When the metal plate 21 of the electroformed substrate 20 is peeled off after the Hall element 13 is sealed with the sealing resin 19, the Hall element 13 is covered with the die attachment film 14 exposed on the bottom surface 19a of the sealing resin 19. Since the die attachment film 14 can be formed thinly, the height of the semiconductor device 1 can be reduced.

The bonding wire 15 connecting the Hall element 13 and the electrode 11 is first connected to the top surface 11f of the electrode 11 lower than the top surface 13d of the Hall element 13 by ball bonding, and then connected to the hole higher than the top surface 11f of the electrode 11 by ball bonding. It is connected to the top surface 13d of the element 13. Since the side surface of the bonding wire 15 is connected to the top surface of the higher Hall element 13, the height secured for the bonding wire 15 is suppressed, and the height of the semiconductor device 1 is reduced.

A portion of the electrode 11 having a predetermined thickness from the top surface 11f protrudes from the side surface 11e of the electrode 11. Therefore, when the metal plate 21 of the electroformed substrate 20 is peeled off from the sealing resin 19, the protruding portion of the electrode 11 supports the electrode 11 against the sealing resin 19, and the electrode 11 is removed together with the sealing resin 19. This guarantees that it will not peel off from the metal plate 21.

FIG. 4 is a cross-sectional view showing steps in a method for manufacturing the electroformed substrate 20. As shown in FIG. The electroformed substrate 20 is provided for manufacturing the semiconductor device 1 in the process shown in FIG. 2(a). In the step shown in FIG. 4(a), a stainless steel plate with a predetermined thickness is prepared as the metal plate 21 of the electroformed substrate 20, and the stainless steel plate with a predetermined thickness is prepared so that only a predetermined range of the main surface 21a forming the electrode 11 is exposed. The metal plate 21 is covered with a resist 25, and a first layer 11a of Au is formed to a predetermined thickness by electroforming on the portion of the metal plate 21 exposed from the resist 25.

In the step shown in FIG. 4(b), a second layer 11b of Ni is formed to a predetermined thickness by electroforming on the first layer 11a formed in the step of FIG. 4(a). The second layer 11b is thicker than the first layer 11a and is formed beyond the opening on the upper surface of the resist 25, and the outer periphery of the second layer 11b protrudes outward beyond the outer periphery of the opening of the resist 25.

In the step shown in FIG. 4(c), a third layer 11c of Ag is formed to a predetermined thickness by electroforming on the second layer 11b formed in the step of FIG. 4(b). The third layer 11c is thinner than the second layer 11b. Since the second layer 11b is formed to exceed the height of the opening in the resist 25, the third layer 11c is also formed to exceed the height of the opening in the resist 25, and the outer periphery of the third layer 11c is the height of the opening in the resist 25. Exceed and protrude outward.

Finally, the electroformed substrate 20 is obtained by removing the resist 25 from the metal plate 21 on which the third layer 11c has been formed in the step of FIG. 4(c). In the steps of FIGS. 4(b) and 4(c), the second layer 11b made of Ni and the third layer 11c made of Ag were formed so as to protrude outward beyond the outer periphery of the opening of the resist 25, so that the electrode 11 is formed so that a portion having a predetermined thickness from the top surface 11f consisting of the second layer 11b and the third layer 11c protrudes from the side surface 11e over a predetermined length in the width direction. Thereafter, the electroformed substrate 20 may be cut to a desired size.

FIG. 5 is a diagram showing an electroformed substrate according to a modification of the first embodiment. The electrode 12 of the modified example is composed of a first layer 12a of Au, a second layer 12b of Ni, a third layer 12c of copper (Cu), and a fourth layer 12d of Ag. is thicker than the first layer 12a, the second layer 12b, and the fourth layer 12d. The electroformed substrate of the modified example has the same configuration as the electroformed substrate 20 of the first embodiment, except that the electrode 12 is composed of the first layer 12a to the fourth layer 12d. For this reason, the components of the electroformed substrate 20 other than the electrode 12 will be indicated by the same reference numerals as those of the electroformed substrate 20 of the first embodiment to indicate the corresponding relationship.

The electrode 12 has a mushroom-like shape, with a portion having a predetermined thickness protruding from the top surface 12g over a predetermined length from the side surface 12f in the width direction. The protruding portion is composed of a third layer 12c and a fourth layer 12d, and the fourth layer 12d covers the third layer 12c.

In the electrode 12, the first layer 12a may have a thickness in the range of 0.01 to 0.2 μm, the second layer 12b may have a thickness in the range of 2 to 15 μm, and the third layer 12c may have a thickness in the range of 2 to 15 μm. The thickness of the fourth layer 12d may be in the range of 20 to 60 μm, and the thickness of the fourth layer 12d may be in the range of 1 to 5 μm. The portion that protrudes in the width direction from the top surface 12g of the electrode 12 may have a thickness in the range of 5 to 40 μm, and a protruding length in the range of 5 to 40 μm.

In the electrode 12 of the modified example, the third layer 12c, which is thicker than the first layer 12a, the second layer 12b, and the fourth layer 12d, is made of diamagnetic Cu. Since the semiconductor device 1 includes the Hall element 13 that detects a magnetic field, it may be affected by the surrounding magnetic field. In the electrode 12 of the modified example, the thick third layer 12c is made of diamagnetic Cu, and the influence of the electrode 12 on the Hall element 13 is reduced. The electrode 12 of the modification can also be used in the semiconductor device 1 in place of the electrode 11 of the first embodiment.

FIG. 6 is a cross-sectional view showing the process of forming the die attachment film 14 on the Hall element 13. The process of forming this die attachment film 14 is applied to the second embodiment as well as the first embodiment.

In the step shown in FIG. 6A, the Hall element 13 whose top surface 13d is attached to the first tape 31 is provided. A liquid die attachment film 35 is sprayed onto the bottom surface 13a of the Hall element 13, and the thickness of the liquid die attachment film 35 is made constant by spin coating. Since the Hall element 13 is turned upside down and attached to the first tape 31, the bottom surface 13a of the Hall element 13 is upward in the figure.

In the step shown in FIG. 6(b), the liquid die attachment film 35 of a predetermined thickness formed on the bottom surface 13a of the Hall element 13 in the step of FIG. 6(a) is irradiated with ultraviolet rays. is solidified to form an adhesive die attachment film 14.

In the step shown in FIG. 6(c), the Hall element 13 on which the die attachment film 14 was formed on the bottom surface 13a in the step of FIG. 6(b) is peeled off from the first tape 31, and the direction of the Hall element 13 that was turned is returned to its original state and mounted on the second tape 32 via the die attachment film 14 formed on the bottom surface 13a. The Hall element 13 mounted on the second tape 32 is peeled off from the second tape 32 and mounted on the main surface 21a of the metal plate 21 of the electroformed substrate 20 in the step shown in FIG. 2(b).

FIG. 7 is a diagram showing a semiconductor device 2 as a modification of the first embodiment. 7(a) is a plan view of the semiconductor device 2, and FIG. 7(c) is a cross-sectional view of the semiconductor device 2 taken along cutting line VII-VII in FIG. 7(b). 7(a) and 7(b) are drawn with the sealing resin 19 omitted in order to clarify the internal structure of the semiconductor device 2.

The semiconductor device 2 of the modification has the same configuration as the semiconductor device 1 of the first embodiment except for the arrangement of the Hall element 13. Therefore, the same reference numerals as in the semiconductor device 1 of the first embodiment will be used to indicate the correspondence.

The semiconductor device 2 of the modified example has a slightly flat substantially rectangular parallelepiped shape, and includes a Hall element 13 having a substantially square shape in plan view as a semiconductor element. In the Hall element 13, a die attachment film 14 is formed on the bottom surface 13a, and four electrode pads 13e are formed on the top surface 13d.

The semiconductor device 2 has four electrodes 11 that are lower than the top surface 13d of the Hall element 13 and are arranged so as to surround the Hall element 13 from all sides. The electrode 11 is constructed by sequentially laminating a first layer 11a made of Au, a second layer 11b made of Ni, and a third layer 11c made of Ag, and the second layer 11b is thicker than the first layer 11a and the third layer 11c. Further, the electrode 11 has a mushroom-like shape, with a portion having a predetermined thickness protruding from the top surface 11f over a predetermined length from the side surface 11e in the width direction. The protruding portion is composed of a second layer 11b and a third layer 11c, and the third layer 11c covers the second layer 11b. The electrode 11 may have a height in the range of 30-80 μm.

The electrode 11 and the Hall element 13 are connected by a bonding wire 15. The bonding wire 15 has a predetermined diameter and is made of gold. The bonding wire 15 is connected to the top surface 11f of the electrode 11 via a metal ball by ball bonding so as to stand up, and the side surface of the bonding wire 15 is in contact with the electrode pad 13e on the top surface 13d of the Hall element 13 adjacent to the electrode 11. are connected like this. The maximum height H22 of the bonding wire 15 from the top surface 11f of the electrode 11 may be in the range of 30 to 60 μm.

The electrode 11 and the Hall element 13 connected by the bonding wire 15 are sealed with a sealing resin 19. The sealing resin 19 may be made of electrically insulating resin, such as epoxy resin or polyimide resin. The sealing resin 19 forms a slightly flat, substantially rectangular parallelepiped-shaped package having a substantially rectangular shape in plan view, seals the Hall element 13 approximately in the center of the package, and encapsulates the die formed on the bottom surface 13a of the Hall element 13. The attachment film 14 is exposed from the bottom surface 19a of the sealing resin 19. The package formed by the sealing resin 19 may have a height H2 in a range of 30 to 150 μm. Further, the height H23 from the highest part of the bonding wire 15 to the top surface 19c of the package may be in the range of 10 to 40 μm.

The electrodes 11 are arranged at two electrodes along opposite long sides so as to be approximately symmetrical to the perpendicular bisectors of the long and short sides of the sealing resin package, which has a substantially rectangular shape in plan view. Electrodes 11 are arranged. The electrode 11 is arranged at a predetermined depth from the side surface 19b of the sealing resin 19, is covered by the side surface 19b of the sealing resin 19, and is not exposed from the side surface 19b of the sealing resin 19. The bottom surface 11d of the electrode 11 is exposed on the bottom surface 19a of the package. The bottom surface 11d of the electrode 11 exposed from the bottom surface 19a of the sealing resin 19 may be covered with a metal film. This metal film may be Sn.

The Hall element 13, which has a substantially square shape in plan view, is arranged so that the ridgeline 13c formed by the intersection of the side surfaces 13b with the adjacent electrodes 11 faces each other. In other words, the side surface 13b of the Hall element 13 is arranged far from the adjacent electrode 11.

In the semiconductor device 2, the bottom surface 13a of the Hall element 13 is covered with a die attachment film 14 exposed on the bottom surface 19a of the sealing resin 19. Since the die attachment film 14 can be formed thinly, the height of the semiconductor device 2 can be reduced.

Further, the bonding wire 15 connecting the Hall element 13 and the electrode 11 is connected to the top surface 11f of the electrode 11 lower than the top surface 13d of the Hall element 13 by ball bonding, but the bonding wire 15 connecting the Hall element 13 and the electrode 11 is connected to the top surface 11f of the electrode 11 lower than the top surface 13d of the Hall element 13, but the The side surface of the bonding wire 15 is connected to the top surface 13d of the element 13. Therefore, the height secured for the bonding wires 15 is suppressed, and the height of the semiconductor device 2 is reduced.

In the semiconductor device 2, the Hall element 13 is arranged so that the ridge line 13c formed by the intersection of the side surface 13b and the adjacent electrode 11 faces each other. Therefore, by arranging the electrode pad 13e on the top surface 13d of the Hall element 13 near the ridgeline 13c, the wiring of the bonding wire 15 can be shortened.

(Second embodiment)
FIG. 8 is a diagram showing a semiconductor device 3 according to the second embodiment. 8(a) is a perspective view of the semiconductor device 3, FIG. 8(b) is a plan view of the semiconductor device 3, and FIG. 8(c) is a semiconductor device along cutting line VIII-VIII in FIG. 8(b). 3 is a sectional view of FIG. 8(a) to FIG. 8(c) are drawn with the sealing resin 19 omitted in order to clarify the internal structure of the semiconductor device 3.

In the semiconductor device 3 of the second embodiment, the cross section 11g of the electrode 11 is exposed from the side surface 19b of the sealing resin 19, whereas the cross section 11g of the electrode 11 is exposed from the side surface 19b of the sealing resin 19. This is different from the semiconductor device 1 of the first embodiment. Regarding other configurations, the semiconductor device 3 of the second embodiment is the same as the semiconductor device 1 of the first embodiment, so the same reference numerals as those of the semiconductor device 1 of the first embodiment are used to correspond. Let's show the relationship.

The semiconductor device 3 of the second embodiment has a slightly flat, substantially rectangular parallelepiped shape, and includes a Hall element 13 having a substantially square shape in plan view as a semiconductor element. In the Hall element 13, a die attachment film 14 is formed on the bottom surface 13a, and four electrode pads 13e are formed on the top surface 13d. The Hall element 13 may have, for example, a side of 100 to 300 μm in a plan view, and a height of 30 to 100 μm. Further, the die attachment film 14 may have a thickness in the range of 1 to 20 μm.

The semiconductor device 3 has four electrodes 11 that are lower than the Hall element 13 and are arranged so as to surround the Hall element 13 from all sides. The electrode 11 is constructed by sequentially laminating a first layer 11a made of Au, a second layer 11b made of Ni, and a third layer 11c made of Ag, and the second layer 11b is thicker than the first layer 11a and the third layer 11c. Further, the electrode 11 has a mushroom-like shape, with a portion having a predetermined thickness protruding from the top surface 11f over a predetermined length from the side surface 11e in the width direction. The protruding portion is composed of a second layer 11b and a third layer 11c, and the third layer 11c covers the second layer 11b.

The electrode 11 may have a diameter in the range of 80 to 200 μm and a height in the range of 30 to 80 μm. The first layer 11a of the electrode 11 may have a thickness in the range of 0.01 to 0.2 μm, the second layer 11b may have a thickness in the range of 28 to 76 μm, and the third layer 11c may have a thickness in the range of 28 to 76 μm. The thickness may be in the range of 1 to 5 μm. The portion that protrudes from the top surface 11f of the electrode 11 in the width direction may have a thickness in a range of 5 to 40 μm, and a protruding length in a range of 5 to 40 μm.

The electrode 11 and the Hall element 13 are connected by a bonding wire 15. The bonding wire 15 has a predetermined diameter and is made of gold. The bonding wire 15 is connected to the top surface 11f of the electrode 11 via a metal ball by ball bonding so as to stand up, and the side surface of the bonding wire 15 is in contact with the electrode pad 13e on the top surface 13d of the Hall element 13 adjacent to the electrode 11. It's connected like that. The maximum height H32 of the bonding wire 15 from the top surface 11f of the electrode 11 may be in the range of 42 to 60 μm.

The electrode 11 and the Hall element 13 connected by the bonding wire 15 are sealed with a sealing resin 19. The sealing resin 19 may be made of electrically insulating resin, such as epoxy resin or polyimide resin. The sealing resin 19 forms a slightly flat, substantially rectangular parallelepiped-shaped package having a substantially rectangular shape in plan view, seals the Hall element 13 approximately in the center of the package, and encapsulates the die formed on the bottom surface 13a of the Hall element 13. The attachment film 14 is exposed from the bottom surface 19a of the sealing resin 19.

The package formed by the sealing resin 19 may have a long side in a range of 600 to 1000 μm, a short side in a range of 300 to 600 μm, and a height H3 in a range of 80 to 150 μm in plan view. It may be in Further, the height H31 from the bottom surface 19a of the package to the top surface 11f of the electrode 11 corresponds to the height of the electrode 11, and may be in the range of 30 to 80 μm as described above. The height H33 from the highest part of the bonding wire 15 to the top surface 19c of the package may be in the range of 10 to 40 μm.

Two electrodes 11 are arranged along opposite long sides so that the electrodes 11 are located approximately symmetrically to the perpendicular bisectors of the long and short sides of the sealing resin package, which has a substantially rectangular shape in plan view. It is located. The electrode 11 is formed with a cross section 11g so as to be exposed within the side surface 19b of the sealing resin 19. Further, the bottom surface 11d of the electrode 11 is exposed from the bottom surface 19a of the package of the sealing resin 19. The cross section 11g of the electrode exposed from the side surface 19b of the sealing resin 19 and the bottom surface 11d of the electrode 11 exposed from the bottom surface 19a may be covered with a metal film. This metal film may be Sn.

The Hall element 13, which has a substantially square shape in plan view, is arranged so that the side surface 13b faces the adjacent electrode 11. In other words, the ridgeline 13c formed by the intersection of the side surfaces 13b of the Hall element 13 is arranged so as to be far from the adjacent electrode 11.

In the semiconductor device 3 of the second embodiment, the cross section 11g of the electrode 11 is exposed on the side surface 19b of the package of the sealing resin 19. Therefore, when attaching the semiconductor device 1 to the substrate, the cross section 11g of the electrode 11 exposed on the side surface 19b of the sealing resin 19 of the semiconductor device 3 can also be used to securely fix it with solder. Further, it is possible to visually check from above the semiconductor device 3 whether the cross section 11g of the electrode 11 exposed on the side surface 19b of the sealing resin 19 of the semiconductor device 3 is fixed with solder.

In the semiconductor device 3, the bottom surface 13a of the Hall element 13 is covered with a die attachment film 14 exposed on the bottom surface 19a of the sealing resin 19. Since the die attachment film 14 can be formed thinly, the height of the semiconductor device 3 can be reduced.

Further, the bonding wire 15 connecting the Hall element 13 and the electrode 11 is connected to the top surface 11f of the electrode 11 lower than the top surface 13d of the Hall element 13 by ball bonding, but the bonding wire 15 connecting the Hall element 13 and the electrode 11 is connected to the top surface 11f of the electrode 11 lower than the top surface 13d of the Hall element 13, but the The side surface of the bonding wire 15 is connected to the top surface 13d of the element 13. Therefore, the height secured for the bonding wires 15 is suppressed, and the height of the semiconductor device 3 is reduced.

In the semiconductor device 3, the Hall element 13 is arranged so that the side surface 13b faces the adjacent electrode 11. Since the Hall element 13 can be arranged so that the ridgeline 13c where the side surfaces 13b intersect is accommodated in the gap between the adjacent electrodes 11, the semiconductor device 3 can be made smaller.

FIG. 9 is a cross-sectional view showing the steps of the method for manufacturing the semiconductor device 3 according to the second embodiment. In the following method for manufacturing a semiconductor, components common to those of the semiconductor device 3 shown in FIG. 8 will be given the same reference numerals to clarify the correspondence.

In the step shown in FIG. 9A, an electroformed substrate 20 is provided, in which the electrode 11 is formed on the main surface 21a of the metal plate 21 by electroforming. In the second embodiment, two adjacent electrodes 11 belonging to adjacent semiconductor devices 3 are integrally formed on an electroformed substrate 20. These two integrally formed electrodes 11 are separated in a subsequent dicing process. The electrode 11 has a predetermined diameter and a predetermined height, and is configured by laminating a first layer 11a made of Au, a second layer 11b made of Ni, and a third layer 11c made of Ag. A portion of the electrode 11 having a predetermined thickness from the top surface 11f protrudes from the side surface 11e over a predetermined length in the width direction. The protruding portion is composed of a second layer 11b and a third layer 11c, and the third layer 11c covers the second layer 11b.

In the step shown in FIG. 9(b), the Hall element 13 is mounted on the electroformed substrate 20 provided in the step of FIG. 9(a). The Hall element 13, which has a slightly flat, substantially rectangular parallelepiped shape and is substantially square in plan view, is installed such that each side surface 13b faces each of the four adjacent electrodes 11. An adhesive layer of an adhesive die attachment film 14 having a predetermined thickness is formed in advance on the bottom surface 13a of the Hall element 13, and the Hall element 13 is attached to the main surface 21a of the metal plate 21 by the die attachment film 14. The die attachment film 14 is heated and hardened before the next step of connecting the bonding wires 15 shown in FIG. 9(c).

In the step shown in FIG. 9(c), the Hall element 13 mounted on the electroformed substrate 20 and the electrode 11 in the step shown in FIG. 9(b) are connected with the bonding wire 15. The bonding wire 15 is connected to the top surface 11f of the electrode lower than the top surface 13d of the Hall element 13 by ball bonding so as to stand up through a metal ball, and then bonded to the electrode pad 13e of the Hall element 13 adjacent to the electrode 11. The wires 15 are connected so that their sides are in contact with each other.

FIG. 10 is a cross-sectional view showing the manufacturing process of the semiconductor device 3 of the second embodiment following FIG. 9. In the step shown in FIG. 10(a), the metal plate of the electroformed substrate 20 is placed so as to cover the Hall element 13 and the electrode 11, and the bonding wire 15 that connected the Hall element 13 and the electrode 11 in the step of FIG. 9(c). A sealing resin 19 is formed up to a predetermined height from the main surface 21a of 21. After the process of peeling off the metal plate 21 of the electroformed substrate 20 from the sealing resin 19 shown in FIG. The process may include a step of grinding the sealing resin 19 so that the sealing resin 19 is ground.

In the step shown in FIG. 10(b), the metal plate 21 of the electroformed substrate 20 is peeled off from the sealing resin 19 formed on the main surface 21a of the metal plate 21 of the electroformed substrate 20. For this purpose, a tape (not shown) is attached to the upper surface 19c of the sealing resin 19, and the sealing resin 19 and the attached tape are peeled off from the metal plate 21 of the electroformed substrate 20. The peeling exposes the bottom surface 19a of the sealing resin 19. The bottom surface 11d of the electrode 11 is exposed on the bottom surface 19a of the sealing resin 19.

In the step shown in FIG. 10(c), the sealing resin 19 is diced into individual pieces. The sealing resin 19 from which the metal plate 21 of the electroformed substrate 20 has been peeled off in the process of FIG. so that it is exposed from By dicing, the sealing resin 19 is separated into pieces to obtain the semiconductor device 3. The dicing process is performed with a tape attached to the upper surface 19c of the sealing resin 19, and the tape is peeled off after the dicing is completed. Therefore, the semiconductor device 3 cut into pieces by dicing does not fall apart. After dicing, the method may further include a step of forming a metal film on the cross section 11g of the electrode 11 exposed from the side surface 19b of the sealing resin 19 and the bottom surface 11d of the electrode 11 exposed from the bottom surface 19a of the sealing resin 19. . This metal film may be Sn.

In the method for manufacturing the semiconductor device 3 of the second embodiment, the electrode 11 is formed on the main surface 21a of the metal plate 21 of the electroformed substrate 20 by electroforming. Therefore, the electrode 11 can be formed with a desired height and configuration.

In the semiconductor device 3, the Hall element 13 sealed with the sealing resin 19 is attached to the main surface 21a of the metal plate 21 of the electroformed substrate 20 by the die attachment film 14 formed on the bottom surface 13a. When the metal plate 21 of the electroformed substrate 20 is peeled off after the Hall element 13 is sealed with the sealing resin 19, the Hall element 13 is covered with the die attachment film 14 exposed on the bottom surface 19a of the sealing resin 19. Since the die attachment film 14 can be formed thinly, the height of the semiconductor device 3 can be reduced.

The bonding wire 15 connecting the Hall element 13 and the electrode 11 is first connected to the top surface 11f of the electrode 11 lower than the top surface 13d of the Hall element 13 by ball bonding, and then connected to the hole higher than the top surface 11f of the electrode 11 by ball bonding. It is connected to the top surface 13d of the element 13. Since the side surface of the bonding wire 15 is connected to the top surface of the higher Hall element 13, the height secured for the bonding wire 15 is suppressed, and the height of the semiconductor device 3 is reduced.

A portion of the electrode 11 having a predetermined thickness from the top surface 11f protrudes from the side surface 11e of the electrode 11. Therefore, when the metal plate 21 of the electroformed substrate 20 is peeled off from the sealing resin 19, the protruding portion of the electrode 11 supports the electrode 11 against the sealing resin 19, and the electrode 11 is removed together with the sealing resin 19. This guarantees that it will not peel off from the metal plate 21.

FIG. 11 is a cross-sectional view showing the steps of the method for manufacturing the electroformed substrate 20. As shown in FIG. The electroformed substrate 20 is provided for manufacturing the semiconductor device 3 in the process shown in FIG. 9(a). In the step shown in FIG. 11(a), a stainless steel plate with a predetermined thickness is prepared as the metal plate 21 of the electroformed substrate 20, and the stainless steel plate with a predetermined thickness is prepared so that only a predetermined range of the main surface 21a forming the electrode 11 is exposed. The metal plate 21 is covered with a resist 25, and a first layer 11a of Au is formed to a predetermined thickness by electroforming on the portion of the metal plate 21 exposed from the resist 25.

In the step shown in FIG. 11(b), a second layer 11b of Ni is formed to a predetermined thickness by electroforming on the first layer 11a formed in the step of FIG. 11(a). The second layer 11b is thicker than the first layer 11a and is formed beyond the opening on the upper surface of the resist 25, and the outer periphery of the second layer 11b protrudes outward beyond the outer periphery of the opening of the resist 25.

In the step shown in FIG. 11(c), a third layer 11c of Ag is formed to a predetermined thickness by electroforming on the second layer 11b formed in the step of FIG. 11(b). The third layer 11c is thinner than the second layer 11b. Since the second layer 11b is formed to exceed the height of the opening in the resist 25, the third layer 11c is also formed to exceed the height of the opening in the resist 25, and the outer periphery of the third layer 11c is the height of the opening in the resist 25. Exceed and protrude outward.

Finally, the electroformed substrate 20 is obtained by removing the resist 25 from the metal plate 21 on which the third layer 11c has been formed in the step of FIG. 11(c). In the steps of FIGS. 11(b) and 11(c), the second layer 11b made of Ni and the third layer 11c made of Ag were formed so as to protrude outward beyond the outer periphery of the opening of the resist 25, so that the electrode 11 is formed so that a portion having a predetermined thickness from the top surface 11f consisting of the second layer 11b and the third layer 11c protrudes from the side surface 11e over a predetermined length in the width direction. Thereafter, the electroformed substrate 20 may be cut to a desired size.

FIG. 12 is a diagram showing an electroformed substrate according to a modification of the second embodiment. The electrode 12 of the modified example is composed of a first layer 12a of Au, a second layer 12b of Ni, a third layer 12c of copper (Cu), and a fourth layer 12d of Ag. is thicker than the first layer 12a, the second layer 12b, and the fourth layer 12d. The electroformed substrate of the modified example has the same configuration as the electroformed substrate 20 of the second embodiment, except that the electrode 12 is composed of the first layer 12a to the fourth layer 12d. For this reason, the components of the electroformed substrate 20 other than the electrode 12 will be indicated by the same reference numerals as those of the electroformed substrate 20 of the second embodiment to indicate the corresponding relationship.

The electrode 12 has a mushroom-like shape, with a portion having a predetermined thickness protruding from the top surface 12g over a predetermined length from the side surface 12f in the width direction. The protruding portion is composed of a third layer 12c and a fourth layer 12d, and the fourth layer 12d covers the third layer 12c.

In the electrode 12, the first layer 12a may have a thickness in the range of 0.01 to 0.2 μm, the second layer 12b may have a thickness in the range of 2 to 15 μm, and the third layer 12c may have a thickness in the range of 2 to 15 μm. The thickness of the fourth layer 12d may be in the range of 20 to 60 μm, and the thickness of the fourth layer 12d may be in the range of 1 to 5 μm. The portion that protrudes in the width direction from the top surface 12g of the electrode 12 may have a thickness in the range of 5 to 40 μm, and a protruding length in the range of 5 to 40 μm.

In the electrode 12 of the modified example, the third layer 12c, which is thicker than the first layer 12a, the second layer 12b, and the fourth layer 12d, is made of diamagnetic Cu. Since the semiconductor device 3 includes the Hall element 13 that detects a magnetic field, it may be affected by the surrounding magnetic field. In the electrode 12 of the modified example, the thick third layer 12c is made of diamagnetic Cu, and the influence of the electrode 12 on the Hall element 13 is reduced. The electrode 12 of the modification can also be used in the semiconductor device 1 in place of the electrode 11 of the second embodiment.

FIG. 13 is a diagram showing a semiconductor device 4 as a modification of the second embodiment. 13(a) is a plan view of the semiconductor device 4, and FIG. 13(c) is a sectional view of the semiconductor device 4 taken along cutting line XIII-XIII in FIG. 13(b). 13(a) and 13(b) are drawn with the sealing resin 19 omitted in order to clarify the internal structure of the semiconductor device 4.

The semiconductor device 4 of the modification has the same configuration as the semiconductor device 3 of the second embodiment except for the arrangement of the Hall element 13. Therefore, the same reference numerals as those of the semiconductor device 3 of the second embodiment will be used to indicate the correspondence.

The semiconductor device 4 of the modified example has a slightly flat substantially rectangular parallelepiped shape, and includes a Hall element 13 having a substantially square shape in plan view as a semiconductor element. In the Hall element 13, a die attachment film 14 is formed on the bottom surface 13a, and four electrode pads 13e are formed on the top surface 13d.

The semiconductor device 4 has four electrodes 11 that are lower than the top surface 13d of the Hall element 13 and are arranged so as to surround the Hall element 13 from all sides. The electrode 11 is constructed by sequentially laminating a first layer 11a made of Au, a second layer 11b made of Ni, and a third layer 11c made of Ag, and the second layer 11b is thicker than the first layer 11a and the third layer 11c. Further, the electrode 11 has a mushroom-like shape, with a portion having a predetermined thickness protruding from the top surface 11f over a predetermined length from the side surface 11e in the width direction. The protruding portion is composed of a second layer 11b and a third layer 11c, and the third layer 11c covers the second layer 11b. The electrode 11 may have a height in the range of 30-80 μm.

The electrode 11 and the Hall element 13 are connected by a bonding wire 15. The bonding wire 15 has a predetermined diameter and is made of gold. The bonding wire 15 is connected to the top surface 11f of the electrode 11 via a metal ball by ball bonding so as to stand up, and the side surface of the bonding wire 15 is in contact with the electrode pad 13e on the top surface 13d of the Hall element 13 adjacent to the electrode 11. are connected like this. The maximum height H42 of the bonding wire 15 from the top surface 11f of the electrode 11 may be in the range of 30 to 60 μm.

The electrode 11 and the Hall element 13 connected by the bonding wire 15 are sealed with a sealing resin 19. The sealing resin 19 may be made of electrically insulating resin, such as epoxy resin or polyimide resin. The sealing resin 19 forms a slightly flat, substantially rectangular parallelepiped-shaped package having a substantially rectangular shape in plan view, seals the Hall element 13 approximately in the center of the package, and encapsulates the die formed on the bottom surface 13a of the Hall element 13. The attachment film 14 is exposed from the bottom surface 19a of the sealing resin 19. The height H4 of the package formed by the sealing resin 19 may be in the range of 30 to 150 μm. Further, the height H43 from the highest part of the bonding wire 15 to the top surface 19c of the package may be in the range of 10 to 40 μm.

The electrodes 11 are arranged at two electrodes along opposite long sides so as to be approximately symmetrical to the perpendicular bisectors of the long and short sides of the sealing resin package, which has a substantially rectangular shape in plan view. Electrodes 11 are arranged. The electrode 11 is formed with a cross section 11g so as to be exposed within the side surface 19b of the sealing resin 19. Further, the bottom surface 11d of the electrode 11 is exposed on the bottom surface 19a of the package. The cross section g of the electrode exposed from the side surface 19b of the sealing resin 19 and the bottom surface 11d of the electrode 11 exposed from the bottom surface 19a may be covered with a metal film. This metal film may be Sn.

The Hall element 13, which has a substantially square shape in plan view, is arranged so that the ridgeline 13c formed by the intersection of the side surfaces 13b with the adjacent electrodes 11 faces each other. In other words, the side surface 13b of the Hall element 13 is arranged far from the adjacent electrode 11.

In the semiconductor device 4, the bottom surface 13a of the Hall element 13 is covered with a die attachment film 14 exposed on the bottom surface 19a of the sealing resin 19. Since the die attachment film 14 can be formed thinly, the height of the semiconductor device 4 can be reduced.

Further, the bonding wire 15 connecting the Hall element 13 and the electrode 11 is connected to the top surface 11f of the electrode 11 lower than the top surface 13d of the Hall element 13 by ball bonding, but the bonding wire 15 connecting the Hall element 13 and the electrode 11 is connected to the top surface 11f of the electrode 11 lower than the top surface 13d of the Hall element 13, but the The side surface of the bonding wire 15 is connected to the top surface 13d of the element 13. Therefore, the height secured for the bonding wires 15 is suppressed, and the height of the semiconductor device 4 is reduced.

In the semiconductor device 4, the Hall element 13 is arranged so that the ridge line 13c formed by the intersection of the side surface 13b and the adjacent electrode 11 faces each other. Therefore, by arranging the electrode pad 13e on the top surface 13d of the Hall element 13 near the ridgeline 13c, the wiring of the bonding wire 15 can be shortened.

INDUSTRIAL APPLICATION This invention can be utilized for the manufacture of a smartphone, for example, for the manufacture of a camera module for a smartphone.

1, 2, 3, 4 semiconductor device 11 electrode 13 Hall element 14 die attachment film 15 bonding wire 19 sealing resin

Claims (13)

A method for manufacturing a semiconductor device, the method comprising:
A step of forming an electrode on the main surface of the metal plate by electroforming,
a step of mounting a semiconductor element on the main surface of the metal plate on which the electrode is formed;
connecting the top surface of the electrode and the top surface of the mounted semiconductor element with a bonding wire;
sealing the main surface of the metal plate with a sealing resin so as to cover the electrode, the semiconductor element, and the bonding wire;
Peeling the metal plate from the sealing resin covering the electrode, the semiconductor element, and the bonding wire;
After peeling off the metal plate, dicing the sealing resin into pieces;
The semiconductor element is a Hall element, and the step of forming the electrode includes laminating gold, nickel, copper, and silver in order by electroforming, and manufacturing a semiconductor device in which the copper layer is thicker than the gold, nickel, and silver layers. Method. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the step of connecting with the bonding wire connects in order from the top surface of the electrode to the top surface of the semiconductor element. 3. The semiconductor device according to claim 1, wherein the step of mounting the semiconductor element on the main surface of the metal plate attaches the semiconductor element to the main surface of the metal plate using an adhesive layer formed on the bottom surface of the semiconductor element. manufacturing method. Any one of claims 1 to 3, further comprising the step of grinding the sealing resin to reduce its height after the step of peeling off the metal plate and before the step of dicing the sealing resin. A method for manufacturing a semiconductor device according to . 5. The method of manufacturing a semiconductor device according to claim 1, wherein in the step of mounting the semiconductor element, the semiconductor element is mounted such that side surfaces of the semiconductor element face the adjacent electrodes. 5. The method of manufacturing a semiconductor device according to claim 1, wherein in the step of mounting the semiconductor element, the semiconductor element is mounted such that a ridge line where side surfaces of the semiconductor element intersect with adjacent electrodes is opposed to each other. 7. The method for manufacturing a semiconductor device according to claim 1, wherein the step of dicing the encapsulating resin is such that the electrode is at a predetermined depth from a side surface of the encapsulating resin formed by dicing. . 7. The method of manufacturing a semiconductor device according to claim 1, wherein in the step of dicing the sealing resin, a cross section of the electrode is exposed from a side surface of the sealing resin formed by dicing. 9. The method of manufacturing a semiconductor device according to claim 1, wherein the metal plate is made of stainless steel. A semiconductor device,
a semiconductor element;
an electrode arranged to surround the semiconductor element;
a bonding wire connecting the top surface of the semiconductor element and the top surface of the electrode;
The bonding wire, the semiconductor element disposed along the bottom surface, and the electrode disposed along the side surface are covered and sealed, including a bottom surface and a side surface, such that the electrode is exposed from the bottom surface. and a sealing resin, the semiconductor element is a Hall element, and the electrode includes gold, nickel, copper, and silver laminated in order from the bottom surface exposed from the bottom surface of the sealing resin to the top surface thereof, and the electrode is made of copper. A semiconductor device in which the layer is thicker than the gold, nickel, and silver layers. 11. The semiconductor device according to claim 10, wherein the sealing resin covers the electrode so that the electrode is at a predetermined depth from a side surface of the sealing resin. 12. The semiconductor device according to claim 10, wherein the sealing resin covers the electrode so that the electrode is exposed from a side surface of the sealing resin. 13. The semiconductor device according to claim 10, wherein the electrode protrudes from the top surface of the electrode by a predetermined thickness toward the inside of the sealing resin than the side surface of the electrode.

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