JP7364432B2 - Film forming apparatus, film forming method, and electronic device manufacturing method - Google Patents

Description

The present invention relates to a film forming apparatus, a film forming method, and an electronic device manufacturing method, and particularly relates to an arrangement structure of a film forming rate measuring means.

Recently, organic EL display devices (organic EL displays) have been in the spotlight as flat panel display devices. Organic EL display devices are self-luminous displays that are superior to liquid crystal panel displays in characteristics such as response speed, viewing angle, and thinness. Panel displays are rapidly being replaced. The field of application is also expanding to automotive displays, etc.

An organic light emitting device (organic EL device: OLED) that constitutes an organic EL display device has a basic structure in which an organic material layer that causes light emission is formed between two opposing electrodes (cathode electrode, anode electrode). The organic layer and metal electrode layer of an organic light-emitting device are formed by heating an evaporation source containing a film-forming material in a film-forming device, evaporating the film-forming material, and converting the evaporated particles of the film-forming material into a pixel pattern. It is manufactured by depositing on a substrate through a mask.

In particular, the vapor source 700 of a film forming apparatus for forming a metal electrode layer on a substrate has a plurality of crucibles 710 to 770 arranged on the circumference, as shown in FIG. The electrode material is evaporated from the crucible 710 in position and deposited on the substrate. When the film-forming material in the crucible 710 at the evaporation position is exhausted, the evaporation source 700 rotates and the crucible 760 from the preheating position moves to the evaporation position, thereby continuously forming a film (Patent Document 1) ).

The film forming apparatus uses a crystal oscillator monitor to measure and control the thickness and film forming rate of the film forming material formed on the substrate. In other words, in the film forming apparatus, the thickness of the film forming material deposited on the substrate is determined by utilizing the relationship between the resonant frequency of the crystal resonator and the thickness of the film forming material deposited on the electrodes of the crystal resonator. Calculate the thickness and film formation rate.
However, if the film-forming material is deposited on the electrodes of the crystal resonator to a thickness greater than a predetermined thickness, the resonant vibration of the crystal resonator becomes unstable, making it impossible to measure the film thickness from the resonant frequency of the crystal resonator. Become. If such a phenomenon occurs, it is determined that the life of the crystal resonator has come to an end, and the crystal resonator is switched.

Japanese Patent Application Publication No. 2006-249575

In a film forming apparatus for forming a metal electrode layer on a substrate, the evaporation position monitoring is performed to monitor the evaporation rate or film formation rate for each of the crucible 710 at the evaporation position and the crucible 760 at the preheating position. A crystal oscillator monitor for monitoring the preheating position and a quartz crystal oscillator monitor for monitoring the preheating position will be installed.

By the way, since the crystal oscillator monitor for monitoring the deposition position takes longer to monitor the film formation rate of the crucible of the evaporation source than the crystal oscillator monitor for monitoring the preheating position, The time required for the thickness of the deposited film-forming material to reach a predetermined thickness is shorter than in the case of a crystal resonator for preheating position monitoring. Therefore, the life of the crystal oscillator monitor for monitoring the deposition position will reach the end of its life earlier than the crystal oscillator monitor for monitoring the preheating position. As a result, there is a problem that the replacement period of the crystal resonator monitor for monitoring the deposition position becomes relatively short.

In view of the above-mentioned problems, the main object of the present invention is to provide a technique for suppressing the shortening of the replacement cycle of a film-forming rate measuring section for monitoring a deposition position.

The film forming apparatus according to the first aspect of the present invention includes:
A vacuum container, a substrate holding part provided in the vacuum container to hold a substrate, and a plurality of crucibles provided in the vacuum container and each containing a film-forming material to be deposited on the substrate. 1 evaporation source and a second evaporation source , a evaporation position where a film forming material is formed into a film on the substrate held by the substrate holding part using a plurality of crucibles of the first evaporation source , and preheating where the film forming material is preheated. a plurality of crucibles of the second evaporation source are moved to a plurality of positions including a evaporation position for depositing a film-forming material on the substrate; and a preheating position for pre-heating the film-forming material. a first film-forming rate measurement unit that includes a crystal oscillator and measures the rate of film-forming material evaporating from the crucible located at the vapor-deposition position in the first evaporation source ;
a second film-forming rate measurement unit that includes a crystal oscillator and measures the rate of film-forming material evaporating from the crucible located at the preheating position in the first evaporation source ;
a third film-forming rate measurement unit that includes a crystal oscillator and measures the rate of film-forming material evaporating from the crucible located at the vapor deposition position in the second evaporation source;
a fourth film-forming rate measurement unit that includes a crystal oscillator and measures the rate of film-forming material evaporated from the crucible located at the preheating position in the second evaporation source;
a path between the crucible located at the evaporation position in the first evaporation source and the first film-forming rate measurement unit; and a path between the crucible located at the evaporation position in the second evaporation source and the third film-forming rate measurement unit. is provided so that the route between the parts intersects with the route between the parts, and
The first distance between the crucible located at the evaporation position of the first evaporation source and the first film formation rate measuring section is such that the crucible located at the preheating position of the first evaporation source and the second film formation The second distance from the rate measurement unit is greater than the second distance between the second distance and the rate measurement unit.
The film forming method according to the second aspect of the present invention is characterized in that a film forming material is formed on a substrate using the film forming apparatus according to the first aspect of the present invention .
The electronic device manufacturing method according to the third aspect of the present invention is characterized in that the electronic device is manufactured using the film forming method according to the second aspect of the present invention.

According to the present invention, it is possible to provide a technique for suppressing shortening of the replacement cycle of a deposition rate measuring section for monitoring a deposition position.

FIG. 1 is a schematic diagram of a part of an electronic device manufacturing line according to an embodiment of the present invention. FIG. 2 is a schematic diagram of a film forming apparatus according to an embodiment of the present invention. FIG. 3 is a schematic diagram of an evaporation source of a film forming apparatus according to an embodiment of the present invention. FIG. 4 is a schematic diagram showing the structure of an anti-stick member according to an embodiment of the present invention. FIG. 5 is a schematic diagram showing the structure of a film forming rate measuring means according to an embodiment of the present invention. FIG. 6 is a schematic diagram showing the arrangement structure of a film forming rate measuring section and an evaporation source according to an embodiment of the present invention. FIG. 7 is a schematic diagram showing the structure of an organic EL display device. FIG. 8 is a schematic diagram showing an example of an evaporation source used in a film forming apparatus for a metal electrode layer.

Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples merely illustrate preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. Furthermore, in the following description, the scope of the present invention is limited to the hardware configuration, software configuration, processing flow, manufacturing conditions, dimensions, materials, shape, etc. of the device, unless otherwise specified. It's not the purpose.

The present invention can be applied to an apparatus that performs film formation by depositing various materials on the surface of a substrate, and can be desirably applied to an apparatus that forms a thin film (material layer) with a desired pattern by vacuum evaporation. Any material such as glass, polymer film, metal, etc. can be selected as the material of the substrate, and the substrate may be, for example, a substrate in which a film such as polyimide is laminated on a glass substrate. . Further, as the film forming material, any material such as an organic material or a metallic material (metal, metal oxide, etc.) may be selected. In addition to the vacuum deposition apparatus described in the following description, the present invention can also be applied to film forming apparatuses including sputtering apparatuses and CVD (Chemical Vapor Deposition) apparatuses. Specifically, the technology of the present invention is applicable to manufacturing equipment for organic electronic devices (eg, organic EL elements, thin film solar cells), optical members, and the like. Among these, an organic EL element manufacturing apparatus that forms an organic EL element by evaporating a film-forming material and depositing it on a substrate through a mask is one of the preferred application examples of the present invention.

<Electronic device manufacturing equipment>
FIG. 1 is a plan view schematically showing the configuration of a part of an electronic device manufacturing apparatus.
The manufacturing apparatus shown in FIG. 1 is used, for example, to manufacture a display panel of an organic EL display device for a smartphone. In the case of display panels for smartphones, for example, 4.5th generation substrates (about 700mm x about 900mm), 6th generation full size (about 1500mm x about 1850mm) or half-cut size (about 1500mm x about 925mm) substrates are used. After forming a film for forming an organic EL element, the substrate is cut out to produce a plurality of small-sized panels. An electronic device manufacturing apparatus generally includes a plurality of cluster apparatuses 1 and a relay apparatus that connects the cluster apparatuses.

The cluster apparatus 1 includes a plurality of film forming apparatuses 11 that perform processing (for example, film formation) on a substrate S, a plurality of mask stock apparatuses 12 that store masks M before and after use, and a transfer chamber 13 arranged in the center thereof. and. As shown in FIG. 1, the transfer chamber 13 is connected to each of the plurality of film forming apparatuses 11 and mask stock apparatuses 12.

A transport robot 14 that transports the substrate S and the mask M is arranged within the transport chamber 13 . The transport robot 14 transports the substrate S from the pass chamber 15 of the relay device arranged on the upstream side to the film forming apparatus 11. Further, the transport robot 14 transports the mask M between the film forming apparatus 11 and the mask stock apparatus 12. The transfer robot 14 is, for example, a robot having a structure in which a robot hand that holds the substrate S or the mask M is attached to a multi-joint arm. In the film forming apparatus 11 (also referred to as a vapor deposition apparatus), a film forming material stored in an evaporation source is heated and evaporated by a heater, and is formed into a film on a substrate through a mask. A series of film forming processes such as transferring the substrate S/mask M to and from the transport robot 14, adjusting the relative position of the substrate S and mask M (alignment), fixing the substrate S onto the mask M, and forming a film (vapor deposition) are performed. , is performed by the film forming apparatus 11.

In the mask stock device 12, a new mask used in the film forming process in the film forming device 11 and a used mask are stored separately in two cassettes. The transport robot 14 transports a used mask from the film forming apparatus 11 to a cassette of the mask stock apparatus 12, and transports a new mask stored in another cassette of the mask stock apparatus 12 to the film forming apparatus 11.

The cluster apparatus 1 includes a pass chamber 15 for transmitting the substrate S from the upstream side in the flow direction of the substrate S to the cluster apparatus 1, and a pass chamber 15 for transmitting the substrate S from the upstream side to the cluster apparatus 1, and a pass chamber 15 for transmitting the substrate S after the film formation process in the cluster apparatus 1 to the other downstream side. A buffer chamber 16 for transmitting to the cluster device is connected. The transport robot 14 in the transport chamber 13 receives the substrate S from the pass chamber 15 on the upstream side and transports it to one of the film forming apparatuses 11 (for example, the film forming apparatus 11a) in the cluster apparatus 1. The transfer robot 14 also receives the substrate S for which the film formation process has been completed in the cluster apparatus 1 from one of the plurality of film formation apparatuses 11 (for example, the film formation apparatus 11b), and receives the substrate S from a buffer connected to the downstream side. Transfer to chamber 16.

A turning chamber 17 for changing the direction of the substrate is installed between the buffer chamber 16 and the pass chamber 15. The rotation chamber 17 is provided with a transfer robot 18 that receives the substrate S from the buffer chamber 16, rotates the substrate S by 180 degrees, and transfers the substrate S to the pass chamber 15. This makes the orientation of the substrate S the same in the upstream cluster device and the downstream cluster device, making substrate processing easier.
The pass chamber 15, the buffer chamber 16, and the turning chamber 17 are so-called relay devices that connect cluster devices, and the relay devices installed upstream and/or downstream of the cluster device are the pass chamber, the buffer chamber, and the turning chamber 17. , a swirling chamber.

The film forming apparatus 11, the mask stock apparatus 12, the transfer chamber 13, the buffer chamber 16, the rotation chamber 17, and the like are maintained in a high vacuum state during the process of manufacturing an organic light emitting device. The pass chamber 15 is normally maintained in a low vacuum state, but may be maintained in a high vacuum state if necessary.

In this embodiment, the configuration of an electronic device manufacturing apparatus has been described with reference to FIG. 1, but the present invention is not limited to this, and may include other types of apparatus or chambers, or the arrangement between the chambers may be changed.
For example, in the present invention, the substrate S and the mask M are bonded together not in the film forming apparatus 11 but in another apparatus or chamber, and then placed on a carrier and transported through a plurality of film forming apparatuses arranged in a line. The present invention can also be applied to an in-line type manufacturing apparatus that performs the film forming process while the film is being deposited.

<Film forming equipment>
Hereinafter, a film forming apparatus according to an embodiment of the present invention will be described with reference to FIGS. 2 to 5.

FIG. 2 is a cross-sectional view schematically showing the configuration of a film forming apparatus, particularly a film forming apparatus 11 for a metallic film forming material used to form a metal electrode layer.
The film forming apparatus 11 includes a vacuum container 20, a substrate holding unit 21, a mask holding unit 22, and an evaporation source 23. The inside of the vacuum container 20 is maintained in a reduced pressure atmosphere such as a vacuum or an inert gas atmosphere such as nitrogen gas. The term "vacuum" here refers to a state that satisfies the degree of vacuum required for film formation, and the term "vacuum container" here also refers to a container that can maintain the atmosphere necessary for film formation inside the container. .

As shown in FIG. 2, a substrate holding unit 21 and a mask holding unit 22 are provided in the upper part of the inside of the vacuum container 20, and an evaporation source 23 is provided in the lower part or bottom surface of the inside of the vacuum container 20. .
The substrate holding unit 21 is means for holding the substrate S received from the transfer robot 14 in the transfer chamber 13, and is also called a substrate holder.
The mask holding unit 22 is a means for holding the mask M carried into the vacuum container 20, and is installed below the substrate holding unit 21. A mask M is placed on the mask holding unit 22. The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate S.

During film formation, for example, the substrate holding unit 21 is lowered relative to the mask holding unit 22, and the substrate S held by the substrate holding unit 21 is placed on the mask M. Further, the substrate holding unit 21 and the mask holding unit 22 are rotated together by the rotating shaft 24 introduced from the upper part (outside) of the vacuum container 20, so that the mask M and the substrate S placed on the mask M are rotated together. rotates. Thereby, the metallic film-forming material can be formed on the substrate S to a uniform thickness.

The evaporation source 23 includes a crucible 231 in which a film-forming material to be deposited on the substrate is stored, and a heater (not shown) for heating the crucible 231.
As shown in FIG. 3, a plurality of evaporation sources 23 of the film forming apparatus 11 for metallic film forming material are provided, and each evaporation source 23 includes a plurality of crucibles (accommodating portions) 231. The number of crucibles 231 included in one evaporation source 23 is usually five or seven, and each evaporation source 23 rotates (for example, rotates on its own axis) by a rotational drive mechanism (not shown) to rotate the crucible 231. It can be moved to a desired position. Therefore, the evaporation source 23 of the film forming apparatus 11 for metallic film forming material is also referred to as a revolver.

During film formation, the crucible 231 located at the evaporation position 232 (232a, 232b, film formation position) of each of the plurality of evaporation sources 23 (23a, 23b) is heated to a high temperature by a heater, and the crucible 231 is housed in the crucible 231. The film-forming material is evaporated to form a film on the substrate 10. After starting to heat the crucible 231 at the deposition position 232, at an appropriate time, start preheating the crucible 231 at the preheating position 237 (237a, 237b). The preheating position 237 is a position where the crucible 231, which is then moved to the vapor deposition position 232 and used for film formation, is preheated. The start point of preheating is determined by the evaporation rate from the crucible 231 at the preheating position 237 (or when the crucible 231 at the preheating position 237 moves to the deposition position 232) before the film forming material in the crucible 231 at the evaporation position 232 runs out. The film formation rate (the same applies hereinafter) of the film formed on the substrate S by the crucible is set so that it can reach a predetermined value. That is, the crucible at preheating position 237 is preheated during at least a portion of the period during which the crucible at deposition position 232 is used for film deposition.

When the film-forming material in the crucible 231 at the evaporation position 232 runs out, the evaporation source 23 is rotated (for example, rotated) to move the crucible 231 at the evaporation position 232 to the post-evaporation position 234, and then to the preheating position 237. The existing crucible 231 is rotated to the deposition position 232. The preheating position 237 is a position where the crucible that will be moved next to the evaporation position 232 is preheated. In this way, by preheating the crucible that will be moved next to the evaporation position 232, the crucible that will be moved next to the evaporation position 232 is preheated. The time required to heat the crucible after it has been moved can be reduced, and the overall deposition time can be shortened.

The vapor deposition position 232 and the preheating position 237 are set so that the crucibles at the positions are in a one-by-one relationship so that they do not thermally interfere with each other. In this way, film formation is performed while rotating each of the evaporation sources 23a and 23b until the film formation material in all the crucibles 231 in the evaporation source 23 is exhausted.

Since the temperature of not only the crucible at the evaporation position 232 but also the crucibles at the preheating position 237 and the post-evaporation position 234 is maintained relatively high, the film forming material evaporates from the crucibles at the preheating position 237 and the post-evaporation position 234 as well. However, in order to suppress the film-forming material evaporated from the crucible at these positions (237, 234) from scattering toward the substrate S or other parts in the vacuum container 20, an adhesion prevention member (cover means) 25 is installed. are provided on each evaporation source 23. For example, the deposition prevention member 25 according to this embodiment includes a first deposition prevention member 25a (first cover means) provided on the first evaporation source 23a, and a second deposition prevention member 25a (first cover means) provided on the second evaporation source 23b. and a mounting member 25b (second cover means). The first adhesion prevention member is arranged between the crucible and the substrate located at the first preheating position (described later), and the second adhesion prevention member is arranged between the crucible and the substrate located at the second preheating position (described later). It is located in

Further, the adhesion prevention member 25 is installed so as to be fixed to the vacuum container 20 of the film forming apparatus 11. The deposition prevention member 25 according to an embodiment of the present invention has a first opening 251 at a position corresponding to the evaporation position 232 of the evaporation source 23, as shown in FIG. Thereby, particles of the film-forming material evaporated from the crucible 231 that has arrived at the evaporation position 232 can fly toward the substrate.

Further, the adhesion prevention member 25 prevents the evaporated particles from the crucible 231 at the preheating position 237 from flying toward the substrate S, and also prevents the evaporation particles from the crucible 231 at the preheating position 237 from flying toward the substrate S. The evaporated particles from the crucible 231 are used as the film forming rate measuring means 27.
configured so that it can be reached. For example, the adhesion prevention member 25 includes a guide section 252 that guides evaporated particles scattering from the crucible at the preheating position 237 toward the film formation rate measurement section 27, and a guide section 252 that guides the evaporated particles toward the film formation rate measurement section 27 along the guide section 252. It has a second opening 253 through which the flying evaporated particles can pass. That is, the second opening 253 is installed on the path from the crucible 231 at the preheating position 237 to the film forming rate measuring means 27.

The deposition material evaporated from the crucibles at the preheating position 237 and the post-evaporation position 234 is deposited on the deposition prevention member 25 . The adhesion prevention member 25 according to this embodiment is provided at a preheating position in order to prevent the film forming material deposited on the adhesion prevention member 25 from being reflected or re-evaporated and contaminating other components inside the vacuum container 20. Protrusions 254 and 255 may be formed at positions corresponding to 237 and/or post-evaporation position 234.

In order to temporarily prevent the evaporated particles of the film-forming material evaporated from the crucible 231 at the evaporation position 232 from being deposited on the substrate S (for example, until the evaporation rate of the crucible 231 at the evaporation position 232 reaches a predetermined value), An evaporation source shutter (movable opening/closing means) 26 is rotatably installed above each evaporation source 23 . For example, the evaporation source shutter 26 according to this embodiment includes a first evaporation source shutter 26a (first movable opening/closing means) installed above the first evaporation source 23a, and a second evaporation source shutter 26a installed above the second evaporation source 23b. and a second evaporation source shutter 26b (second movable opening/closing means). The first movable opening/closing means is arranged between the crucible located at the first vapor deposition position (described later) and the substrate, and the second movable opening/closing means is disposed between the crucible located at the second vapor deposition position (described later) and the substrate. It is located in

At the time when film formation on the substrate S starts, the evaporation source shutter 26 rotates to open the upper part of the crucible 231 at the evaporation position 232, and the evaporated particles of the film forming material from the crucible 231 at the evaporation position 232 are released. Make it fly toward the substrate S. That is, the evaporation source shutter 26 has two positions: a closed position (solid line in FIG. 2) that prevents the evaporation particles from above the crucible 231 at the evaporation position 232, and a closed position (solid line in FIG. and the open position (dashed line in Figure 2).

Inside the vacuum chamber 20 of the film forming apparatus 11, there is a device for measuring the evaporation rate of the film forming material from the plurality of evaporation sources 23 or the film forming rate at which particles of the film forming material are formed on the substrate S. A plurality of film forming rate measuring means 27 are installed.
For example, the first film-forming rate measuring means 27a measures the evaporation rate and/or the film-forming rate of the first evaporation source 23a, and the second film-forming rate measuring means 27b measures the evaporation rate and/or the film-forming rate of the second evaporation source 23b. Or measure the film formation rate.

Each of the evaporation rate measuring means 27 (27a, 27b) according to an embodiment of the present invention is a film forming rate measuring unit for measuring the evaporation rate from the crucible at the vapor deposition position 232 and/or the film forming rate on the substrate. 271 (271a, 271b), and a film forming rate measuring section 272 (272a, 272b) for measuring the evaporation rate from the crucible at the preheating position 237.
For example, the first film forming rate measuring section 271a of the first film forming rate measuring means 27a measures the evaporation rate or film forming rate of the crucible 231 located at the vapor deposition position 232 in the first evaporation source 23a, and measures the first film forming rate. The second film forming rate measuring section 272a of the measuring means 27a measures the evaporation rate of the crucible 231 at the preheating position 237 in the first evaporation source 23a.

The film forming apparatus includes a control unit that controls the operation of each component of the apparatus and performs various calculations necessary for this purpose, such as calculation processing of film thickness and film forming rate based on information obtained from the crystal oscillator 30. Equipped with 800. A control section may be provided for each film forming apparatus, or a control section may be provided for each film forming cluster. As the control unit 800, an information processing device including calculation resources such as a processor and memory, or a dedicated processing circuit may be used.

The film forming rate measuring means 27 according to an embodiment of the present invention includes a crystal oscillator 30 as shown in FIG. 5(a). The control unit 800 controls the thickness and deposition rate of the film-forming material deposited on the substrate S based on the change in the resonance frequency of the crystal resonator 30 in accordance with the deposition of the film-forming material from the evaporation source 23. Calculate indirectly.

The crystal resonator 30 has a structure in which electrode films 32 and 33 are formed on the front and back surfaces of a crystal plate 31 cut in a certain crystal direction.
For the crystal plate 31 used in the crystal resonator 30, it is desirable to use an AT-cut crystal that has relatively excellent temperature characteristics. As shown in FIG. 5(a), it is better to make the back surface on the electrode film 33 side a curved surface and make the surface on the electrode film 32 side, on which the film forming material is deposited, a flat surface, to improve the stability of the vibration of the crystal resonator 30. can be increased.

The electrode films 32 and 33 of the crystal resonator 30 are preferably made of an alloy containing aluminum (Al) as a main component or gold (Au). This is because the aluminum alloy or gold electrode films 32 and 33 have good adhesion with the film forming material, and the film deposited on the electrode film 32 of the crystal resonator 30 follows the resonance vibration of the crystal resonator 30 well. This is because it can be done. In FIG. 5(a), it is shown that the film-forming material is deposited directly on the electrode film 32, but although the adhesion with the electrode material is better, the border with the film-forming material is on the electrode film 32. A third film (for example, an organic material different from the film-forming material) that changes continuously may be additionally formed.

ここで、Δｆは、共振周波数の変動値、Δｍは、水晶振動子の電極膜３２上に堆積された成膜材料の質量変動値、ｆは、水晶の基本周波数、μは、水晶のせん断係数（ｓｈｅａｒ ｍｏｄｕｌｕｓ）、ρＱは、水晶の密度、Ａは、電極面積である。すなわち、水晶振動子３０の電極３２上に成膜材料が堆積されて、その質量が増加するにつれて、水晶振動子３０の共振周波数は小さくなる。 When an AC voltage is applied to the electrode films 32 and 33 of the crystal resonator 30, the crystal resonator 30 vibrates due to the piezoelectric properties of the crystal, and if the thickness of the crystal plate satisfies a predetermined condition, it vibrates at the resonant frequency. become. The resonant frequency of such a crystal resonator 30 changes depending on the mass fluctuation of the film forming material deposited on the electrode film 32. The following relational expression (Sauerbrey equation) holds between the fluctuation value of the resonance frequency of the crystal resonator 30 and the fluctuation value of the mass of the film-forming material.

Here, Δf is the fluctuation value of the resonance frequency, Δm is the mass fluctuation value of the film forming material deposited on the electrode film 32 of the crystal resonator, f is the fundamental frequency of the crystal, and μ is the shear coefficient of the crystal. (shear modulus), ρQ is the crystal density, and A is the electrode area. That is, as the film forming material is deposited on the electrodes 32 of the crystal resonator 30 and its mass increases, the resonant frequency of the crystal resonator 30 becomes smaller.

Using such a relationship, it is possible to determine the fluctuation value of the mass of the film deposited on the electrode film 32, as well as the film thickness and film formation rate from the measured fluctuation value of the resonant frequency of the crystal resonator 30. .

Each film-forming rate measuring section of the film-forming rate measuring means 27 according to an embodiment of the present invention includes a plurality of (for example, ten) crystal oscillators 30, as shown in FIG. 5(b). Of the plurality of crystal resonators 30, only the crystal resonator 30 located at the position corresponding to the opening 34 is exposed to the evaporation source 23, and the film forming material scattered from the evaporation source 23 is deposited thereon. During this time, the remaining crystal oscillators 30 are maintained in a state where they are not exposed to the evaporation source 23, and when the crystal oscillator 30 that was exposed to the evaporation source 23 reaches the end of its life, another crystal oscillator 30 is replaced with the opening 34. For example, the film is rotated to a certain position, and the film thickness and film formation rate are similarly measured. In this manner, when all of the crystal resonators 30 included in the film-forming rate measuring section become unusable, the film-forming rate measuring section is replaced. This extends the overall lifespan of the deposition rate measurement unit and increases the overall throughput of the production line by reducing the amount of time the deposition process is stopped due to replacement of the deposition rate measurement unit. can be done.

As shown in FIG. 5(b), the film formation rate measurement unit according to an embodiment of the present invention uses a rotatable chopper 35 to deposit the film onto the crystal resonator 30 located at the position corresponding to the opening 34. The amount of deposition material used can be adjusted. That is, by rotating the chopper 35 having the opening 356 at a constant speed so that the crystal oscillator 30 located at a position corresponding to the opening 34 is periodically blocked from the evaporation source 23, the crystal oscillator 30 is The amount of deposition material deposited can be adjusted.

<Relative arrangement structure of film-forming rate measuring means and evaporation source>
Hereinafter, with reference to FIG. 6, the arrangement structure of the film forming rate measuring means 27 and the evaporation source 23 according to an embodiment of the present invention will be described.

FIG. 6 shows the first evaporation source 23a and second evaporation source 23b, which are surrounded by broken lines in FIG. A rate measuring means 27a and a second film forming rate measuring means 27b are shown.

In the film forming apparatus 11 according to the embodiment of the present invention, evaporation from the crucible 231 at the first evaporation position (first position, 232a) of any one of the plurality of evaporation sources 23, for example, the first evaporation source 23a In order to measure the rate/film formation rate, the first film formation rate measurement unit 271a of the first film formation rate measurement means 27a installed toward the first evaporation position 232a of the first evaporation source 23a and the first evaporation In order to measure the evaporation rate/film formation rate from the crucible 231 at the first preheating position (second position, 237a) of the source 23a, a first The second film-forming rate measuring section 272a of the film-forming rate measuring means 27a determines that the distance between the first film-forming rate measuring section 271a and the first vapor deposition position 232a or the crucible 231 at the first vapor deposition position 232a is the second film forming rate measuring section 272a. The distance between the film rate measuring unit 272a and the first preheating position 237a or the crucible 231 at the first preheating position 237a is different.

For example, the first film formation rate measurement section 271a and the second film formation rate measurement section 272a are determined by the distance between the first film formation rate measurement section 271a and the first vapor deposition position 232a or the crucible 231 at the first vapor deposition position 232a. A certain first distance A is set so as to be larger than a second distance B, which is a distance between the second film formation rate measurement unit 272a and the first preheating position 237a or the crucible 231 at the first preheating position 237a.

In this way, the first film forming rate measuring section 271a directed toward the crucible 231 at the first evaporation position 232a is connected to the first evaporation source by the second film forming rate measuring section 272a directed toward the crucible 231 at the first preheating position 237a. By installing the crucible at a position far from the crucible at the corresponding position 23a, the deposition rate of the deposition material that is evaporated from the crucible 231 at the first deposition position 232a and deposited on the first deposition rate measuring section 271a can be reduced. I can do it. This is because some of the particles of the film-forming material evaporated from the crucible cannot reach the film-forming rate measuring part due to collisions with other particles before reaching the film-forming rate measuring part. Some of the particles of the film-forming material evaporated from the crucible 231 at the first evaporation position 232a of the first evaporation source 23a also collide with other particles while flying toward the first film-forming rate measuring section 271a. As a result, the amount of particles actually reaching the first film-forming rate measuring section 271a is reduced.

Therefore, even if the first film-forming rate measuring section 271a is exposed to the crucible of the first evaporation source 23a for a relatively longer time than the second film-forming rate measuring section 272a, the first film-forming rate measuring section 271a Since the deposition rate of the deposition material deposited on the portion 271a is lower than the deposition rate of the deposition material deposited on the second deposition rate measurement portion 272a, the first deposition rate measurement portion 271a and the second deposition rate measurement portion 271a are The difference in film formation rates between the film rate measurement units 272a can be reduced. As a result, it is possible to reduce the problem that the first film-forming rate measuring section 271a reaches the end of its life before the second film-forming rate measuring section 272a and shortening the replacement cycle. Monitoring can be performed for a relatively long time compared to when the first evaporation source 23a is closer to the first evaporation position 232a.

On the other hand, the second film-forming rate measuring section 272a, which is exposed to the first evaporation source 23a for a relatively short time, is installed near the first preheating position 237a of the first evaporation source 23a, so that other film-forming Since there is little influence from material particles, the evaporation rate of the crucible 231 at the first preheating position 237a of the first evaporation source 23a can be monitored with high sensitivity.

In the embodiment of the present invention shown in FIG. 6, the third film-forming rate measuring section 271b and the fourth film-forming rate measuring section 272b of the second film-forming rate measuring means 27b are also It is arranged in the same way as the measuring section. That is, the third film forming rate measuring section 271b is directed toward the second evaporation position (third position, 232b) of the second evaporation source 23b, and the second preheating position (fourth position, 237b) of the second evaporation source 23b is directed. The distance between the third deposition rate measurement section 271b and the second evaporation position 232b or the crucible 231 at the second evaporation position 232b is such that the fourth deposition rate measurement section 272b is The second preheating position 237b or the distance between the second preheating position 237b and the crucible 231 is set to be greater than the distance between the second preheating position 237b and the crucible 231.

Furthermore, in one embodiment of the present invention, the first film formation rate measurement section 271a and the third film formation rate measurement section 271b measure the first distance between the first film formation rate measurement section 271a and the first vapor deposition position 232a. A is provided so that it is larger than the third distance C between the third film deposition rate measuring section 271b and the first vapor deposition position 232a. That is, when viewed from above, the first evaporation position 232a of the first evaporation source 23a is located between the first film formation rate measurement section 271a and the third film formation rate measurement section 271b, and the first deposition rate measurement section The path between the section 271a and the first evaporation position 232a of the first evaporation source 23a and the path between the third deposition rate measurement section 271b and the second evaporation position 232b of the second evaporation source 23b intersect with each other. I will do it.
Thereby, the size of the film forming apparatus 11 in the direction in which the first film forming rate measuring section 271a and the third film forming rate measuring section 271b are connected (for example, the short side direction of the substrate S carried into the film forming apparatus 11) can be determined. Can be made smaller.

Further, the second distance B, which is the distance between the second film deposition rate measurement section 272a and the first preheating position 237a, is the distance between the third deposition rate measurement section 271b and the first vapor deposition position 232a. The film-forming rate measuring unit and the like are installed so that the distance is shorter than the third distance C. Similarly, the corresponding A film deposition rate measuring section will be installed.

As a result, the film-forming rate measurement unit facing the evaporation position 232 of each evaporation source 23 is installed at a higher position in the vertical direction of the film-forming apparatus than the film-forming rate measurement unit facing the preheating position 237, and the evaporation source shutter The evaporation rate/film formation rate from the crucible 231 located at the evaporation position 232 of the evaporation source 23 can be measured with high accuracy without being disturbed by the evaporation source 26. Each film-forming rate measuring section can measure the evaporation rate/film-forming rate whether the corresponding evaporation source shutter 26 is in the open position or in the closed position.

For example, the first deposition rate measurement section 271a and the third deposition rate measurement section 271b perform the first evaporation process of the first evaporation source 23a without being disturbed by the first evaporation source shutter 26a or the second evaporation source shutter 26b. The evaporation rate/film formation rate from the crucible 231 at the position 232a or the second evaporation position 232b of the second evaporation source 23b can be measured with high accuracy.

Furthermore, in one embodiment of the present invention, the first distance A between the first deposition rate measuring section 271a and the first evaporation position 232a of the first evaporation source 23a is different from the first distance A between the first deposition rate measuring section 271a and the first evaporation position 232a of the first evaporation source 23a. The corresponding film-forming rate measuring unit is installed so that the distance D is smaller than the fourth distance D between the first evaporation source 23a and the first evaporation position 232a.

In one embodiment of the present invention, the first evaporation source shutter 26a has a distance between the first open position of the first evaporation source shutter 26a and the first evaporation position 232a of the first evaporation source 23a. The distance between the first open position and the first closed position is greater than the distance between the first closed position, which is the closed position of the first evaporation source shutter 26a, and the first evaporation position 232a of the first evaporation source 23a. It is possible to move between
Similarly, the second evaporation source shutter 26b has a distance between the second open position of the second evaporation source shutter 26b and the second evaporation position 232b of the second evaporation source 23b. 26b and the second vapor deposition position 232b of the second vapor source 23b. be.

In this embodiment, among the plurality of evaporation sources 23, a first evaporation source 23a and a second evaporation source 23b and a film formation rate measuring means for measuring the evaporation rate/film formation rate from these evaporation sources are used. Although the description has focused on the relative arrangement position with respect to the measurement unit, the present invention is not limited thereto, and among the plurality of evaporation sources 23, the third evaporation source 23c and the fourth evaporation source 23d, and these evaporation sources The position of the film forming rate measuring means for measuring the evaporation rate/film forming rate from the source relative to the measuring section can also be determined in the same manner.
Also, in the fifth evaporation source 23e among the plurality of evaporation sources 23, the film formation rate measurement unit directed toward the evaporation position of the fifth evaporation source 23e is directed toward the preheating position of the fifth evaporation source 23e for film formation rate measurement. It is preferable to install it at a position farther than the other parts.

<Method for manufacturing electronic devices>
Next, an example of a method for manufacturing an electronic device using the film forming apparatus of this embodiment will be described. The configuration and manufacturing method of an organic EL display device will be illustrated below as an example of an electronic device.
First, the organic EL display device to be manufactured will be explained. 7(a) is an overall view of the organic EL display device 60, and FIG. 7(b) shows a cross-sectional structure of one pixel.

As shown in FIG. 7A, in the display area 61 of the organic EL display device 60, a plurality of pixels 62 each including a plurality of light emitting elements are arranged in a matrix. Although details will be explained later, each light emitting element has a structure including an organic layer sandwiched between a pair of electrodes. Note that the pixel herein refers to the smallest unit that can display a desired color in the display area 61. In the case of the organic EL display device according to this embodiment, a pixel 62 is configured by a combination of a first light emitting element 62R, a second light emitting element 62G, and a third light emitting element 62B that emit light different from each other. The pixel 62 is often composed of a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but it may also be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element. There are no restrictions.

FIG. 7(b) is a schematic partial cross-sectional view taken along line AB in FIG. 7(a). The pixel 62 includes a first electrode (anode) 64, a hole transport layer 65, one of the light emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a second electrode (cathode) 68 on a substrate 63. It has an organic EL element comprising the following. Among these, the hole transport layer 65, the light emitting layers 66R, 66G, and 66B, and the electron transport layer 67 correspond to organic layers. Further, in this embodiment, the light emitting layer 66R is an organic EL layer that emits red, the light emitting layer 66G is an organic EL layer that emits green, and the light emitting layer 66B is an organic EL layer that emits blue. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue, respectively. Further, the first electrode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the second electrode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. Note that an insulating layer 69 is provided between the first electrodes 64 in order to prevent the first electrodes 64 and the second electrodes 68 from shorting due to foreign matter. Furthermore, since the organic EL layer is degraded by moisture and oxygen, a protective layer 70 is provided to protect the organic EL element from moisture and oxygen.

Although the hole transport layer 65 and the electron transport layer 67 are shown as one layer in FIG. may be formed. Further, between the first electrode 64 and the hole transport layer 65, there is an energy band structure that allows holes to be smoothly injected from the first electrode 64 to the hole transport layer 65. A hole injection layer can also be formed. Similarly, an electron injection layer may be formed between the second electrode 68 and the electron transport layer 67.

Next, an example of a method for manufacturing an organic EL display device will be specifically described.
First, a substrate 63 on which a circuit (not shown) for driving an organic EL display device and a first electrode 64 are formed is prepared.

Acrylic resin is formed by spin coating on the substrate 63 on which the first electrode 64 is formed, and the acrylic resin is patterned by lithography so that an opening is formed in the part where the first electrode 64 is formed, and an insulating layer is formed. Form 69. This opening corresponds to the light emitting region where the light emitting element actually emits light.

The substrate 63 on which the insulating layer 69 has been patterned is carried into a first organic material film forming apparatus, and the substrate is held by the substrate holding unit 21 and/or an electrostatic chuck (not shown), and the hole transport layer 65 is removed. , is formed as a common layer on the first electrode 64 in the display area. The hole transport layer 65 is formed by vacuum deposition. Actually, since the hole transport layer 65 is formed to have a larger size than the display area 61, a high-definition mask is not required.

Next, the substrate 63 on which up to the hole transport layer 65 has been formed is carried into a second organic material film forming apparatus and held by the substrate holding unit 21 and/or an electrostatic chuck. The substrate and the mask are aligned, the substrate is placed on the mask, and a light-emitting layer 66R that emits red light is formed on a portion of the substrate 63 where an element that emits red light is to be arranged.

Similar to the formation of the light-emitting layer 66R, a light-emitting layer 66G that emits green light is formed by a third organic material film-forming device, and a light-emitting layer 66B that emits blue light is further formed by a fourth organic material film-forming device. . After the film formation of the light emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed over the entire display area 61 using a fifth film forming apparatus. The electron transport layer 67 is formed as a layer common to the three color light emitting layers 66R, 66G, and 66B.

The substrate on which the electron transport layer 67 has been formed is moved to a film forming apparatus for a metallic film forming material, and a second electrode 68 is formed thereon.
According to an embodiment of the present invention, in a film forming apparatus for a metallic film material, the film forming rate measuring section directed toward the evaporation position of the evaporation source is replaced by the film forming rate measuring section directed toward the preheating position of the evaporation source. By installing it far away, it is possible to suppress shortening of the replacement cycle of the film-forming rate measuring section directed toward the evaporation position of the evaporation source.
Thereafter, the organic EL display device 60 is completed by moving to a plasma CVD device and forming a protective layer 70.

If the substrate 63 on which the insulating layer 69 has been patterned is exposed to an atmosphere containing moisture or oxygen from the time the substrate 63 on which the insulating layer 69 has been patterned is carried into the film forming apparatus until the film forming of the protective layer 70 is completed, the light emitting layer made of the organic EL material may There is a risk of deterioration due to moisture and oxygen. Therefore, in this example, the substrates are transferred into and out of the film forming apparatus under a vacuum atmosphere or an inert gas atmosphere.
The embodiment described above is an example of the present invention, and the present invention is not limited to the configuration of the embodiment described above, and may be appropriately modified within the scope of the technical idea.

11: Film forming apparatus 20: Vacuum container (container)
21: Substrate holding unit 23: Evaporation source 23a: First evaporation source 23b: Second evaporation source 25: Adhesion prevention member (cover means)
25a: First adhesion prevention member (cover means)
25b: Second adhesion prevention member (cover means)
26: Evaporation source shutter (movable opening/closing means)
26a: First evaporation source shutter (movable opening/closing means)
26b: Second evaporation source shutter (movable opening/closing means)
27: Film formation rate measuring means 231: Crucible (storage part)
232: Vapor deposition position 232a: First vapor deposition position (first position)
232b: Second vapor deposition position (third position)
237: Preheating position 237a: First preheating position (second position)
237b: Second preheating position (fourth position)
271, 272: Deposition rate measurement section 271a: First deposition rate measurement section 272a: Second deposition rate measurement section 271b: Third deposition rate measurement section 272b: Fourth deposition rate measurement section A: First distance B: Second distance

Claims (13)

a vacuum container,
a substrate holding part provided in the vacuum container and holding the substrate;
a first evaporation source and a second evaporation source that are installed in the vacuum container and each include a plurality of crucibles in which film-forming materials to be deposited on the substrate are stored;
moving the plurality of crucibles of the first evaporation source to a plurality of positions including a vapor deposition position where a film formation material is formed into a film on the substrate held by the substrate holder and a preheating position where the film formation material is preheated; moving means for moving the plurality of crucibles of the second evaporation source to a plurality of positions including a vapor deposition position for forming a film-forming material on the substrate and a preheating position for pre-heating the film-forming material;
a first film-forming rate measurement unit that includes a crystal oscillator and measures the rate of film-forming material evaporated from the crucible located at the vapor deposition position in the first evaporation source ;
a second film-forming rate measurement unit that includes a crystal oscillator and measures the rate of film-forming material evaporating from the crucible located at the preheating position in the first evaporation source ;
a third film-forming rate measurement unit that includes a crystal oscillator and measures the rate of film-forming material evaporating from the crucible located at the vapor deposition position in the second evaporation source;
a fourth film-forming rate measurement unit that includes a crystal oscillator and measures the rate of film-forming material evaporating from the crucible located at the preheating position in the second evaporation source;
including;
a path between the crucible located at the evaporation position in the first evaporation source and the first film-forming rate measurement unit; and a path between the crucible located at the evaporation position in the second evaporation source and the third film-forming rate measurement unit. is provided so that the route between the parts intersects with the route between the parts, and
The first distance between the crucible located at the evaporation position of the first evaporation source and the first film formation rate measuring section is such that the crucible located at the preheating position of the first evaporation source and the second film formation A film forming apparatus characterized in that the distance between the rate measuring unit and the second distance is greater than the second distance. The crucible located at the preheating position in the first evaporation source is preheated during at least part of the period during which the crucible located at the evaporation position in the first evaporation source is used for film formation. The film forming apparatus according to claim 1. The crucible located at the preheating position in the second evaporation source is preheated during at least part of the period during which the crucible located at the evaporation position in the second evaporation source is used for film formation. The film forming apparatus according to claim 2, characterized in that: The moving means moves the plurality of crucibles of the first evaporation source to a plurality of positions including the vapor deposition position and the preheating position by rotating the first evaporation source, and moves the plurality of crucibles of the first evaporation source to a plurality of positions including the vapor deposition position and the preheating position, and 4. The crucibles of the second evaporation source are moved to a plurality of positions including the vapor deposition position and the preheating position by rotating the crucibles of the second evaporation source. Film deposition equipment. further comprising a cover means for preventing film-forming material evaporated from a crucible other than the crucible located at the evaporation position in the first evaporation source from reaching the substrate;
The cover means has a first opening installed at a position corresponding to the crucible located at the vapor deposition position in the first evaporation source , and a first opening located at a position corresponding to the crucible located at the preheating position in the first evaporation source . 5. The film forming apparatus according to claim 1, further comprising a second opening provided on a path toward the film forming rate measuring section. a first closed position that is installed between the first evaporation source and the substrate and covers the evaporation position of the first evaporation source; and a first open position that opens the evaporation position of the first evaporation source. further comprising a first movable opening/closing means movable between the
The distance between the first movable opening and closing means located at the first open position and the crucible located at the vapor deposition position in the first evaporation source is such that the first movable opening and closing means is located at the first closed position. The film forming apparatus according to any one of claims 1 to 5, wherein the distance is greater than the distance between the means and the crucible located at the vapor deposition position in the first evaporation source . Any one of claims 1 to 6, wherein the first distance is larger than the third distance between the crucible located at the evaporation position in the first evaporation source and the third film-forming rate measuring section. The film forming apparatus according to item 1. 8. The film forming apparatus according to claim 7, wherein the second distance is smaller than the third distance. 9. The first distance is smaller than the fourth distance between the crucible located at the evaporation position in the first evaporation source and the fourth film-forming rate measuring section. Film deposition equipment. The moving means moves the plurality of crucibles of the second evaporation source to a plurality of positions including the vapor deposition position and the preheating position in the second evaporation source by rotating the second evaporation source. The film forming apparatus according to any one of claims 7 to 9 , characterized in that: a second closed position that is installed between the second evaporation source and the substrate and covers the evaporation position in the second evaporation source; and a second open position that opens the evaporation position in the second evaporation source. further comprising a second movable opening/closing means movable between the
The distance between the second movable opening/closing means located at the second open position and the crucible located at the vapor deposition position in the second evaporation source is such that the distance between the second movable opening/closing means located at the second open position and the crucible located at the vapor deposition position in the second evaporation source is 8. The film forming apparatus according to claim 7, wherein the distance is greater than the distance between the crucible and the crucible located at. A film forming method of forming a film forming material onto a substrate using the film forming apparatus according to any one of claims 1 to 11 . A method of manufacturing an electronic device using the film forming method according to claim 12 .

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