JP7367673B2 - Manufacturing method of zero-plane anchoring film and liquid crystal display element - Google Patents
Manufacturing method of zero-plane anchoring film and liquid crystal display element Download PDFInfo
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- JP7367673B2 JP7367673B2 JP2020525715A JP2020525715A JP7367673B2 JP 7367673 B2 JP7367673 B2 JP 7367673B2 JP 2020525715 A JP2020525715 A JP 2020525715A JP 2020525715 A JP2020525715 A JP 2020525715A JP 7367673 B2 JP7367673 B2 JP 7367673B2
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- liquid crystal
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- PWSKHLMYTZNYKO-UHFFFAOYSA-N heptane-1,7-diamine Chemical compound NCCCCCCCN PWSKHLMYTZNYKO-UHFFFAOYSA-N 0.000 description 1
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
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- NFLOWLFQCMNSRE-UHFFFAOYSA-N methyl 2-tert-butylperoxycarbonyl-4-(3-tert-butylperoxycarbonyl-4-methoxycarbonylbenzoyl)benzoate Chemical compound C1=C(C(=O)OOC(C)(C)C)C(C(=O)OC)=CC=C1C(=O)C1=CC=C(C(=O)OC)C(C(=O)OOC(C)(C)C)=C1 NFLOWLFQCMNSRE-UHFFFAOYSA-N 0.000 description 1
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- HBJPJUGOYJOSLR-UHFFFAOYSA-N naphthalene-2,7-diamine Chemical compound C1=CC(N)=CC2=CC(N)=CC=C21 HBJPJUGOYJOSLR-UHFFFAOYSA-N 0.000 description 1
- WPUMVKJOWWJPRK-UHFFFAOYSA-N naphthalene-2,7-dicarboxylic acid Chemical compound C1=CC(C(O)=O)=CC2=CC(C(=O)O)=CC=C21 WPUMVKJOWWJPRK-UHFFFAOYSA-N 0.000 description 1
- SXJVFQLYZSNZBT-UHFFFAOYSA-N nonane-1,9-diamine Chemical compound NCCCCCCCCCN SXJVFQLYZSNZBT-UHFFFAOYSA-N 0.000 description 1
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- FZUGPQWGEGAKET-UHFFFAOYSA-N parbenate Chemical compound CCOC(=O)C1=CC=C(N(C)C)C=C1 FZUGPQWGEGAKET-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- FVDOBFPYBSDRKH-UHFFFAOYSA-N perylene-3,4,9,10-tetracarboxylic acid Chemical compound C=12C3=CC=C(C(O)=O)C2=C(C(O)=O)C=CC=1C1=CC=C(C(O)=O)C2=C1C3=CC=C2C(=O)O FVDOBFPYBSDRKH-UHFFFAOYSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000000710 polymer precipitation Methods 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
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- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- CEXXQKSPCPPORI-UHFFFAOYSA-N propan-2-yl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OC(C)C CEXXQKSPCPPORI-UHFFFAOYSA-N 0.000 description 1
- 229960005335 propanol Drugs 0.000 description 1
- ILVGAIQLOCKNQA-UHFFFAOYSA-N propyl 2-hydroxypropanoate Chemical compound CCCOC(=O)C(C)O ILVGAIQLOCKNQA-UHFFFAOYSA-N 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 229940032159 propylene carbonate Drugs 0.000 description 1
- 229940116423 propylene glycol diacetate Drugs 0.000 description 1
- JREWFSHZWRKNBM-UHFFFAOYSA-N pyridine-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C1=CN=C(C(O)=O)C(C(O)=O)=C1C(O)=O JREWFSHZWRKNBM-UHFFFAOYSA-N 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- JQZAKMJZYGPUFD-UHFFFAOYSA-N spiro[3.3]heptane-2,6-dicarboxylic acid Chemical compound C1C(C(=O)O)CC21CC(C(O)=O)C2 JQZAKMJZYGPUFD-UHFFFAOYSA-N 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- DPPBKURCPGWRJU-UHFFFAOYSA-N tert-butyl 4-(4-tert-butylperoxycarbonylbenzoyl)benzenecarboperoxoate Chemical compound C1=CC(C(=O)OOC(C)(C)C)=CC=C1C(=O)C1=CC=C(C(=O)OOC(C)(C)C)C=C1 DPPBKURCPGWRJU-UHFFFAOYSA-N 0.000 description 1
- UXUDDWYULYBTAU-UHFFFAOYSA-N tert-butyl N-[2-(4-aminophenyl)ethyl]-N-[(4-aminophenyl)methyl]carbamate Chemical compound C(C)(C)(C)OC(=O)N(CC1=CC=C(C=C1)N)CCC1=CC=C(C=C1)N UXUDDWYULYBTAU-UHFFFAOYSA-N 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- 125000003866 trichloromethyl group Chemical group ClC(Cl)(Cl)* 0.000 description 1
- ILWRPSCZWQJDMK-UHFFFAOYSA-N triethylazanium;chloride Chemical compound Cl.CCN(CC)CC ILWRPSCZWQJDMK-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- QWFRRFLKWRIKSZ-UHFFFAOYSA-N truxillic acid Chemical compound OC(=O)C1C(C=2C=CC=CC=2)C(C(O)=O)C1C1=CC=CC=C1 QWFRRFLKWRIKSZ-UHFFFAOYSA-N 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- KYWIYKKSMDLRDC-UHFFFAOYSA-N undecan-2-one Chemical compound CCCCCCCCCC(C)=O KYWIYKKSMDLRDC-UHFFFAOYSA-N 0.000 description 1
- KLNPWTHGTVSSEU-UHFFFAOYSA-N undecane-1,11-diamine Chemical compound NCCCCCCCCCCCN KLNPWTHGTVSSEU-UHFFFAOYSA-N 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 239000011345 viscous material Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 230000002087 whitening effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F299/00—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
- C08F299/02—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/30—Low-molecular-weight compounds
- C08G18/32—Polyhydroxy compounds; Polyamines; Hydroxyamines
- C08G18/3225—Polyamines
- C08G18/3237—Polyamines aromatic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
- C08G69/02—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
- C08G69/26—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Liquid Crystal (AREA)
- Polymerisation Methods In General (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Description
本発明は、安価かつ複雑な工程を含まない手法にて、ゼロ面アンカリング膜を製造することが可能なポリマー安定化技術を応用した製造方法、及び、当該製造方法を用いる、更なる低電圧駆動を実現するための液晶表示素子およびその製造方法に関するものである。 The present invention provides a manufacturing method that applies polymer stabilization technology that allows the production of zero-plane anchoring films at low cost and without complicated processes, and a further low-voltage method using the manufacturing method. The present invention relates to a liquid crystal display element for realizing driving and a manufacturing method thereof.
近年、携帯電話 、コンピュータ及びテレビのディスプレイなどには液晶表示素子が広く用いられている。液晶表示素子は薄型、軽量、低消費電力などの特性を有しており、今後はVRや超高精細のディスプレイ等、更なるコンテンツへの応用が期待されている。液晶ディスプレイの表示方式には、TN(Twisted Nematic)、IPS(In-Plane Switching)、VA(Vertical Alignment)など様々な表示モードが提案されているが、すべてのモードには液晶を所望の配向状態に誘導する膜(液晶配向膜)が使用されている。 In recent years, liquid crystal display elements have been widely used in displays for mobile phones, computers, televisions, and the like. Liquid crystal display elements have characteristics such as being thin, lightweight, and low power consumption, and are expected to be applied to further content such as VR and ultra-high-definition displays in the future. Various display modes have been proposed for liquid crystal displays, such as TN (Twisted Nematic), IPS (In-Plane Switching), and VA (Vertical Alignment), but all modes require the liquid crystal to be aligned in a desired state. A film (liquid crystal alignment film) that induces this is used.
特にタブレットPCやスマートフォン、スマートTV等のタッチパネルを具備した製品には、タッチしても表示が乱れにくいIPSモードが好まれており、近年ではコントラスト向上や視野角特性の向上の点でFFS(Frindge Field Switching)を用いた液晶表示素子や、光配向を用いた非接触技術を用いた技術が用いられるようになってきた。 In particular, IPS mode is preferred for products equipped with touch panels such as tablet PCs, smartphones, and smart TVs, where the display is less distorted even when touched. Liquid crystal display elements using field switching (field switching) and non-contact technology using optical alignment have come into use.
しかしながら、FFSはIPSに比べ基板の製造コストが大きく、Vcomシフトと呼ばれるFFSモード特有の表示不良が発生する課題がある。また光配向に関しては、ラビング法に比べ、製造できる素子の大きさを大きくできる点や表示特性を大きく向上できるというメリットがあるが、光配向の原理上の課題(分解型であれば分解物由来の表示不良、異性化型であれば配向力不足による焼き付き等)が挙げられる。それらの課題を解決するために液晶表示素子メーカーや液晶配向膜メーカーは種々工夫を行っているのが現状である。 However, FFS has a higher substrate manufacturing cost than IPS, and there is a problem in that a display defect unique to FFS mode called Vcom shift occurs. Regarding photoalignment, compared to the rubbing method, it has the advantage of increasing the size of the device that can be manufactured and greatly improving display characteristics, but there are problems with the principle of photoalignment (if it is a decomposition type, the For example, if the isomerization type is used, there may be display defects due to insufficient orientation force, etc.). In order to solve these problems, liquid crystal display element manufacturers and liquid crystal alignment film manufacturers are currently making various efforts.
一方で、近年ゼロ面アンカリングというものを利用したIPSモードが提案されており、この手法を用いることで従来のIPSモードに比べてコントラスト向上や大幅な低電圧駆動が可能になるという報告がされている(特許文献1参照)。 On the other hand, in recent years, an IPS mode that uses something called zero-plane anchoring has been proposed, and it has been reported that using this method improves contrast and enables significantly lower voltage driving than the conventional IPS mode. (See Patent Document 1).
具体的には、片側の基板には強いアンカリングエネルギーを有する液晶配向膜を用い、一方の横電界を発生させる方の電極を具備した基板側には一切液晶の配向規制力を有さなくなるような処理を施し、それらを用いてIPSモードの液晶表示素子を作る方法である。 Specifically, a liquid crystal alignment film with strong anchoring energy is used on one side of the substrate, while the other side of the substrate, which has the electrode that generates the transverse electric field, has no liquid crystal alignment regulating force at all. This is a method of fabricating an IPS mode liquid crystal display element by subjecting it to various treatments and using them.
近年では、濃厚ポリマーブラシ等を用いてゼロ面状態を作り出し、ゼロ面アンカリングIPSモードの技術提案がなされている(特許文献2)。この技術によりコントラスト比の大幅な向上や駆動電圧の大幅な低下を実現している。 In recent years, a technology has been proposed for a zero- plane anchoring IPS mode in which a zero-plane state is created using a thick polymer brush or the like ( Patent Document 2). This technology has achieved a significant improvement in contrast ratio and a significant reduction in drive voltage.
一方でこの技術には原理的に発生する課題があり、第1はポリマーブラシを基板上に安定的に発生させるためには非常に繊細な条件で行う必要があり、量産を考えると現実的ではないことが挙げられる。第2は、配向膜は焼き付き抑制などの重要な働きを担っているが、ポリマーブラシ等を用いる場合は必要となる電気物性などの制御が困難であることが挙げられる。第3は駆動原理上電圧Offにした際の応答速度が非常に遅くなることが挙げられる。配向規制力をゼロにすることで液晶にかかる駆動時の抵抗を無くすことで閾値電圧の大幅な低下と、駆動時の配向不良領域が減少することによる輝度向上が期待されるが、液晶の戻りに関しては、液晶の戻る際の動力は液晶の弾性力に依存するため、配向膜があるときに比べて大きく速度が低下することが考えられる。
このような技術的課題を解決できればパネルメーカーとしても大きなコストメリットとなり、バッテリーの消費抑制や画質の向上等にもメリットとなることが考えられる。
本発明は、上記のような課題を解決するためになされたものであり、ゼロ面アンカリング膜を製造することが可能なポリマー安定化技術を応用した製造方法、及び、常温において、簡便且つ安価な方法で非接触配向と低駆動電圧化とOff時の応答速度も速くすることが同時に実現できる、横電界液晶表示素子およびその製造方法を提供することを目的とする。
On the other hand, there are issues with this technology that arise in principle.The first is that in order to stably generate polymer brushes on the substrate, it must be performed under extremely delicate conditions, which is impractical when considering mass production. One example is that there is no such thing. Second, although the alignment film plays an important role such as suppressing image sticking, when using a polymer brush or the like, it is difficult to control the necessary electrical properties. Thirdly, due to the driving principle, the response speed when the voltage is turned off is extremely slow. By reducing the alignment regulating force to zero, it is expected that the resistance applied to the liquid crystal during driving will be eliminated, resulting in a significant reduction in the threshold voltage and an improvement in brightness due to the reduction of areas with poor alignment during driving. Regarding this, since the power when the liquid crystal returns depends on the elastic force of the liquid crystal, it is thought that the speed will be significantly lower than when there is an alignment film.
If these technical issues can be resolved, it will be a huge cost advantage for panel manufacturers, and it is also conceivable that it will have benefits such as reducing battery consumption and improving image quality.
The present invention has been made to solve the above-mentioned problems, and provides a manufacturing method that applies polymer stabilization technology that can manufacture a zero-plane anchoring film, and a manufacturing method that is simple and inexpensive at room temperature. An object of the present invention is to provide a transverse electric field liquid crystal display element and a method for manufacturing the same, which can simultaneously achieve non-contact alignment, lower driving voltage, and faster response speed when off.
本発明者らは、上記の課題を解決する為、鋭意検討を行った結果、上記の課題を解決出来ることを見出し、以下の要旨を有する本発明を完成させた。 In order to solve the above-mentioned problems, the present inventors conducted intensive studies and found that the above-mentioned problems could be solved, and completed the present invention having the following gist.
すなわち、本発明は以下を包含する。
[1] 液晶及び下記式(1)で表される構造を有するラジカル重合性化合物を含有する液晶組成物を、ラジカル発生膜に接触させた状態で、前記ラジカル重合性化合物を重合反応させるのに十分なエネルギーを与えるステップを含む、ゼロ面アンカリング膜の製造方法。
式(1)中、RaおよびRbはそれぞれ独立に炭素数2~8の直鎖アルキル基を表し、Eは単結合、-O-、-NRc-、-S-、エステル結合、アミド結合から選ばれる結合基を表し、Rcは水素原子、炭素数1~4のアルキル基を示す。
[2] 第一基板の有する前記ラジカル発生膜が一軸配向処理されたラジカル発生膜である[1]に記載の方法。
[3] エネルギーを与えるステップを無電界で行う、[1]又は[2]に記載の方法。
[4] 前記ラジカル発生膜が、ラジカル重合を誘発する有機基が固定化されて成る膜であることを特徴とする[1]~[3]のいずれか一項に記載の方法。
[5] 前記ラジカル発生膜が、ラジカルを発生する基を有する化合物と重合体との組成物を塗布、硬化して膜を形成することにより膜中に固定化させて得られることを特徴とする[1]~[3]のいずれか一項に記載の方法。
[6] 前記ラジカル発生膜が、ラジカル重合を誘発する有機基を含有する重合体から成ることを特徴とする[1]~[3]のいずれか一項に記載の方法。
[7] 前記ラジカル重合を誘発する有機基を含有する重合体が、ラジカル重合を誘発する有機基を含有するジアミンを含むジアミン成分を用いて得られるポリイミド前駆体、ポリイミド、ポリウレアおよびポリアミドから選ばれる少なくとも一種の重合体であることを特徴とする[6]記載の方法。
[8] 前記ラジカル重合を誘発する有機基が下記構造[X-1]~[X-18]、[W]、[Y]、[Z]で表される有機基である[4]、[6]及び[7]のいずれか一項に記載の方法。
(式[X-1]~[X18]中、*は化合物分子の重合性不飽和結合以外の部分との結合部位を示し、S1、S2はそれぞれ独立して-O-、-NR-、-S-を表し、Rは水素原子又は炭素原子数1~4のアルキル基を表し、R1,R2はそれぞれ独立して水素原子、ハロゲン原子、炭素数1~4のアルキル基を表す。
(式[W]、[Y]、[Z]中、*は化合物分子の重合性不飽和結合以外の部分との結合部位を示し、Arは有機基及び/又はハロゲン原子を置換基として有しても良いフェニレン、ナフチレン、及びビフェニレンからなる群より選ばれる芳香族炭化水素基を示し、R9及びR10は、それぞれ独立に、炭素数1~10のアルキル基又は炭素数1~10のアルコキシ基を表し、R9とR10がアルキル基の場合、末端で互いに結合し環構造を形成していても良い。Qは下記のいずれかの構造を表す。
(式中、R11は-CH2-、-NR-、-O-、又は-S-を表し、Rは水素原子又は炭素原子数1~4のアルキル基を表し、*は化合物分子のQ以外の部分との結合部位を示す。)
R12は水素原子、ハロゲン原子、炭素数1~10のアルキル基又は炭素数1~10のアルコキシ基を表す。)
[9] 前記ラジカル重合を誘発する有機基を含有するジアミンが下記一般式(6)又は下記一般式(7)で表される構造を有するジアミンであることを特徴とする[7]記載の方法。
(式(6)中、R6は単結合、-CH2-、-O-、-COO-、-OCO-、-NHCO-、-CONH-、-NH-、-CH2O-、-N(CH3)-、-CON(CH3)-、又は-N(CH3)CO-を表し、
R7は単結合、又は非置換もしくはフッ素原子によって置換されている炭素数1~20のアルキレン基を表し、当該アルキレン基の任意の-CH2-又は-CF2-の1以上は、それぞれ独立に-CH=CH-、二価の炭素環、および二価の複素環から選ばれる基で置き換えられていてもよく、さらに、次に挙げるいずれかの基、すなわち、-O-、-COO-、-OCO-、-NHCO-、-CONH-、又は-NH-が互いに隣り合わないことを条件に、これらの基で置き換えられていてもよい;
R8は、下記式:
(式[X-1]~[X-18]中、*は化合物分子のラジカル重合反応性基以外の部分との結合部位を示し、S1、S2はそれぞれ独立して-O-、-NR-、-S-を表し、Rは水素原子又は炭素原子数1~4のアルキル基を表し、R1,R2はそれぞれ独立して水素原子、ハロゲン原子、炭素数1~4のアルキル基を表す))
(式(7)中、T1及びT2は、それぞれ独立に、単結合、-O-、-S-、-COO-、-OCO-、-NHCO-、-CONH-、-NH-、-CH2O-、-N(CH3)-、-CON(CH3)-、又は-N(CH3)CO-であり、
Sは単結合、又は非置換もしくはフッ素原子によって置換されている炭素数1~20のアルキレン基を表し、当該アルキレン基の任意の-CH2-又は-CF2-の1以上は、それぞれ独立に-CH=CH-、二価の炭素環、および二価の複素環から選ばれる基で置き換えられていてもよく、さらに、次に挙げるいずれかの基、すなわち、-O-、-COO-、-OCO-、-NHCO-、-CONH-、又は-NH-が互いに隣り合わないことを条件に、これらの基で置き換えられていてもよく、
Jは下記式で表される有機基であり、
(式[W]、[Y]、[Z]中、*はT2との結合箇所を表し、Arは有機基及び/又はハロゲン原子を置換基として有しても良いフェニレン、ナフチレン、及びビフェニレンからなる群より選ばれる芳香族炭化水素基を示し、R9及びR10は、それぞれ独立に、炭素数1~10のアルキル基又は炭素数1~10のアルコキシ基を表し、Qは下記のいずれかの構造を表す。
(式中、R11は-CH2-、-NR-、-O-、又は-S-を表し、Rは水素原子又は炭素原子数1~4のアルキル基を表し、*は化合物分子のQ以外の部分との結合部位を示す。)
R12は水素原子、ハロゲン原子、炭素数1~10のアルキル基又は炭素数1~10のアルコキシ基を表す。))
[10] 前記式(1)中のEがエステル結合である[1]~[9]のいずれか一項に記載の方法。
[11] ラジカル発生膜を有する第一基板と、ラジカル発生膜を有していてもよい第二基板とを用意するステップ、
第一基板上のラジカル発生膜が第二基板に対向するようにセルを作成するステップ、および、
第一基板と第二基板との間に、液晶及びラジカル重合性化合物を含有する液晶組成物を充填するステップを含み、
[1]~[10]のいずれか一項に記載の方法を用いる液晶セルの製造方法。
[12] 前記第二基板がラジカル発生膜を有さない第二基板である[11]に記載の液晶セルの製造方法。
[13] 前記第二基板が、一軸配向性を有する液晶配向膜がコーティングされた基板であることを特徴とする[12]に記載の液晶セルの製造方法。
[14] 前記一軸配向性を有する液晶配向膜が水平配向用の液晶配向膜であることを特徴とする[13]に記載の液晶セルの製造方法。
[15] 前記ラジカル発生膜を有する第一基板が櫛歯電極を有する基板である[11]~[14]のいずれか一項に記載の液晶セルの製造方法。
[16] 液晶及び下記式(1)で表される構造を有するラジカル重合性化合物を含有する液晶組成物。
式(1)中、RaおよびRbはそれぞれ独立に炭素数2~8の直鎖アルキル基を表し、Eは単結合、-O-、-NRc-、-S-、エステル結合、アミド結合から選ばれる結合基を表し、Rcは水素原子、炭素数1~4のアルキル基を示す。
[17] 前記式(1)中のEがエステル結合である[16]に記載の液晶組成物。
[18] [1]~[15]のいずれか一項に記載の方法を用いて得られたゼロ面アンカリング状態を作り出す膜を用いる液晶表示素子の製造方法。
[19] [18]記載の方法を用いて得られた液晶表示素子。
[20] 第一基板又は第二基板が電極を有する、[19]に記載の液晶表示素子。
[21] 低電圧駆動横電界液晶表示素子である、[19]又は[20]に記載の液晶表示素子。
That is, the present invention includes the following.
[1] A liquid crystal composition containing a liquid crystal and a radically polymerizable compound having a structure represented by the following formula (1) is brought into contact with a radical generating film, and the radically polymerizable compound is subjected to a polymerization reaction. A method for producing a zero-plane anchoring membrane comprising the step of providing sufficient energy.
In formula (1), R a and R b each independently represent a straight chain alkyl group having 2 to 8 carbon atoms, and E is a single bond, -O-, -NR c -, -S-, an ester bond, an amide It represents a bonding group selected from bonds, and R c represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.
[2] The method according to [1], wherein the radical generating film of the first substrate is a radical generating film subjected to uniaxial alignment treatment.
[3] The method according to [1] or [2], wherein the step of applying energy is performed without an electric field.
[4] The method according to any one of [1] to [3], wherein the radical generating film is a film on which an organic group that induces radical polymerization is immobilized.
[5] The radical-generating film is obtained by applying and curing a composition of a compound having a radical-generating group and a polymer to form a film, thereby fixing the composition in the film. The method according to any one of [1] to [3].
[6] The method according to any one of [1] to [3], wherein the radical generating film is made of a polymer containing an organic group that induces radical polymerization.
[7] The polymer containing an organic group that induces radical polymerization is selected from polyimide precursors, polyimides, polyureas, and polyamides obtained using a diamine component containing a diamine containing an organic group that induces radical polymerization. The method according to [6], wherein the method is at least one kind of polymer.
[8] The organic group that induces radical polymerization is an organic group represented by the following structures [X-1] to [X-18], [W], [Y], [Z] [4], [ 6] and [7].
(In formulas [X-1] to [X18], * indicates a bonding site with a portion other than the polymerizable unsaturated bond of the compound molecule, and S 1 and S 2 are each independently -O-, -NR- , -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R 1 and R 2 each independently represent a hydrogen atom, a halogen atom, or an alkyl group having 1 to 4 carbon atoms. .
(In the formulas [W], [Y], and [Z], * indicates a bonding site with a part other than a polymerizable unsaturated bond in the compound molecule, and Ar has an organic group and/or a halogen atom as a substituent. R 9 and R 10 each independently represent an alkyl group having 1 to 10 carbon atoms or an alkoxy group having 1 to 10 carbon atoms. When R 9 and R 10 are alkyl groups, they may be bonded to each other at the ends to form a ring structure. Q represents any of the following structures.
(In the formula, R 11 represents -CH 2 -, -NR-, -O-, or -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and * represents the Q of the compound molecule. (Indicates the binding site with other parts.)
R 12 represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, or an alkoxy group having 1 to 10 carbon atoms. )
[9] The method according to [7], wherein the diamine containing an organic group that induces radical polymerization is a diamine having a structure represented by the following general formula (6) or the following general formula (7). .
(In formula (6), R 6 is a single bond, -CH 2 -, -O-, -COO-, -OCO-, -NHCO-, -CONH-, -NH-, -CH 2 O-, -N (CH 3 )-, -CON(CH 3 )-, or -N(CH 3 )CO-,
R 7 represents a single bond or an alkylene group having 1 to 20 carbon atoms that is unsubstituted or substituted with a fluorine atom, and one or more of arbitrary -CH 2 - or -CF 2 - of the alkylene group are each independently may be substituted with a group selected from -CH=CH-, divalent carbocycle, and divalent heterocycle, and further, any of the following groups, namely -O-, -COO- , -OCO-, -NHCO-, -CONH-, or -NH- may be substituted with these groups, provided that they are not adjacent to each other;
R8 is the following formula:
(In formulas [X-1] to [X-18], * indicates a bonding site with a moiety other than the radical polymerization reactive group of the compound molecule, and S 1 and S 2 are each independently -O-, - NR-, -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R 1 and R 2 each independently represent a hydrogen atom, a halogen atom, or an alkyl group having 1 to 4 carbon atoms. ))
(In formula (7), T 1 and T 2 are each independently a single bond, -O-, -S-, -COO-, -OCO-, -NHCO-, -CONH-, -NH-, - CH 2 O-, -N(CH 3 )-, -CON(CH 3 )-, or -N(CH 3 )CO-,
S represents a single bond or an unsubstituted or fluorine-substituted alkylene group having 1 to 20 carbon atoms, and one or more of -CH 2 - or -CF 2 - in the alkylene group are each independently It may be substituted with a group selected from -CH=CH-, a divalent carbocycle, and a divalent heterocycle, and further, any of the following groups, namely -O-, -COO-, -OCO-, -NHCO-, -CONH-, or -NH- may be substituted with these groups, provided that they are not adjacent to each other,
J is an organic group represented by the following formula,
(In the formulas [W], [Y], and [Z], * represents the bonding site with T2 , and Ar represents phenylene, naphthylene, and biphenylene which may have an organic group and/or a halogen atom as a substituent. R 9 and R 10 each independently represent an alkyl group having 1 to 10 carbon atoms or an alkoxy group having 1 to 10 carbon atoms, and Q is any of the following. represents the structure of
(In the formula, R 11 represents -CH 2 -, -NR-, -O-, or -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and * represents the Q of the compound molecule. (Indicates the binding site with other parts.)
R 12 represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, or an alkoxy group having 1 to 10 carbon atoms. ))
[10] The method according to any one of [1] to [9], wherein E in the formula (1) is an ester bond.
[11] A step of preparing a first substrate having a radical generating film and a second substrate optionally having a radical generating film,
creating a cell such that the radical generating film on the first substrate faces the second substrate, and
A step of filling a liquid crystal composition containing a liquid crystal and a radically polymerizable compound between the first substrate and the second substrate,
A method for manufacturing a liquid crystal cell using the method according to any one of [1] to [10].
[12] The method for manufacturing a liquid crystal cell according to [11], wherein the second substrate does not have a radical generating film.
[13] The method for manufacturing a liquid crystal cell according to [12], wherein the second substrate is a substrate coated with a liquid crystal alignment film having uniaxial alignment.
[14] The method for manufacturing a liquid crystal cell according to [13], wherein the liquid crystal alignment film having uniaxial alignment is a liquid crystal alignment film for horizontal alignment.
[15] The method for manufacturing a liquid crystal cell according to any one of [11] to [14], wherein the first substrate having the radical generating film is a substrate having comb-teeth electrodes.
[16] A liquid crystal composition containing a liquid crystal and a radically polymerizable compound having a structure represented by the following formula (1).
In formula (1), R a and R b each independently represent a straight chain alkyl group having 2 to 8 carbon atoms, and E is a single bond, -O-, -NR c -, -S-, an ester bond, an amide It represents a bonding group selected from bonds, and R c represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.
[17] The liquid crystal composition according to [16], wherein E in the formula (1) is an ester bond.
[18] A method for manufacturing a liquid crystal display element using a film that creates a zero-plane anchoring state obtained using the method according to any one of [1] to [15].
[19] A liquid crystal display element obtained using the method described in [18].
[20] The liquid crystal display element according to [19], wherein the first substrate or the second substrate has an electrode.
[21] The liquid crystal display element according to [19] or [20], which is a low voltage driven lateral electric field liquid crystal display element.
本発明によれば、ゼロ面アンカリング膜を工業的に、歩留まりよく作り出すことができる。本発明の方法を用いて、安価な原料や既存の製造法で特許文献1、2記載のゼロ面アンカリングIPSモード液晶表示素子に類似した液晶表示素子を簡便に製造することができる。また、本発明の製造方法で得られた液晶表示素子は、従来技術よりもOff時の液晶の応答速度が速く、且つ低駆動電圧、輝点なし、IPSモードではVcomシフトの抑制ができ、FFSモードでは更なる高精細化が可能、といった優れた特性を有する液晶表示素子を提供することができる。 According to the present invention, a zero-plane anchoring film can be industrially produced with a high yield. Using the method of the present invention, a liquid crystal display element similar to the zero-plane anchoring IPS mode liquid crystal display element described in Patent Documents 1 and 2 can be easily manufactured using inexpensive raw materials and existing manufacturing methods. In addition, the liquid crystal display element obtained by the manufacturing method of the present invention has a faster liquid crystal response speed when turned off than the conventional technology, has a low driving voltage, has no bright spots, can suppress Vcom shift in IPS mode, and has FFS In this mode, it is possible to provide a liquid crystal display element having excellent characteristics such that even higher definition is possible.
本発明は、ラジカル発生膜に特定の重合性化合物を含有する液晶を接触させた状態でUVまたは熱により重合性化合物を重合させることを特徴とするゼロ面アンカリング膜の製造方法である。より具体的には、液晶及びラジカル重合性化合物を含有する液晶組成物を、ラジカル発生膜を有する第一基板とラジカル発生膜を有していてもよい第二基板との間に有するセルを用意するステップ、及び前記セルに、前記ラジカル重合性化合物を重合反応させるのに十分なエネルギーを与えるステップを含む、ゼロ面アンカリング膜の製造方法である。好ましくは、ラジカル発生膜を有する第一基板と、ラジカル発生膜を有さない第二基板とを用意するステップ、ラジカル発生膜が第二基板に対向するようにセルを作成するステップ、および、第一基板と第二基板との間に、液晶及びラジカル重合性化合物を含有する液晶組成物を充填するステップを含む液晶セルの製造方法である。例えば、第二基板がラジカル発生膜を有さないとともに、一軸配向処理された液晶配向膜を有する基板であり、第一基板が櫛歯電極を有する基板である、低電圧駆動IPS液晶表示素子の作成方法である。 The present invention is a method for producing a zero-plane anchoring film, which comprises polymerizing a polymerizable compound by UV or heat while bringing a liquid crystal containing a specific polymerizable compound into contact with a radical-generating film. More specifically, a cell is prepared that has a liquid crystal composition containing a liquid crystal and a radically polymerizable compound between a first substrate having a radical generating film and a second substrate optionally having a radical generating film. and applying sufficient energy to the cell to polymerize the radically polymerizable compound. Preferably, the steps include: preparing a first substrate having a radical generating film and a second substrate not having a radical generating film; creating a cell so that the radical generating film faces the second substrate; The method for manufacturing a liquid crystal cell includes the step of filling a liquid crystal composition containing a liquid crystal and a radically polymerizable compound between one substrate and a second substrate. For example, a low voltage drive IPS liquid crystal display element in which the second substrate does not have a radical generating film and has a liquid crystal alignment film subjected to uniaxial alignment treatment, and the first substrate has a comb-teeth electrode. This is the creation method.
本発明において「ゼロ面アンカリング膜」とは、面内方向における液晶分子の配向規制力が全く無いか、あったとしても液晶同士の分子間力よりも弱く、この膜のみでは液晶分子をいずれの方向にも一軸配向させない膜をいう。また、このゼロ面アンカリング膜は、固体膜に限定されず、固体表面を覆う液体膜も含まれる。通常、液晶表示素子には液晶分子の配向を規制する膜、すなわち液晶配向膜を対で用いて液晶を配向させるが、このゼロ面アンカリング膜と液晶配向膜を対で用いた場合も液晶を配向させることが出来る。これは、液晶配向膜の配向規制力が液晶分子同士の分子間力によって液晶層の厚み方向にも伝達し、結果としてゼロ面アンカリング膜に近接する液晶分子も配向するからである。よって液晶配向膜に水平配向用の液晶配向膜を用いた場合においては液晶セル内全体で水平配向状態を作り出すことが出来る。水平配向とは液晶分子の長軸が液晶配向膜面に対してほぼ平行に配列している状態をいい、数度程度の傾斜配向も水平配向の範疇に含まれる。 In the present invention, a "zero-plane anchoring film" means that there is no alignment regulating force for liquid crystal molecules in the in-plane direction, or even if there is, it is weaker than the intermolecular force between liquid crystal molecules, and this film alone will not control the liquid crystal molecules. Refers to a film that is not uniaxially aligned in the direction of . Furthermore, this zero-plane anchoring film is not limited to a solid film, but also includes a liquid film that covers a solid surface. Normally, in a liquid crystal display element, a film that regulates the alignment of liquid crystal molecules, that is, a liquid crystal alignment film, is used as a pair to align the liquid crystal. It can be oriented. This is because the alignment regulating force of the liquid crystal alignment film is also transmitted in the thickness direction of the liquid crystal layer due to the intermolecular force between liquid crystal molecules, and as a result, liquid crystal molecules close to the zero-plane anchoring film are also aligned. Therefore, when a liquid crystal alignment film for horizontal alignment is used as the liquid crystal alignment film, a horizontal alignment state can be created throughout the liquid crystal cell. Horizontal alignment refers to a state in which the long axes of liquid crystal molecules are aligned substantially parallel to the surface of the liquid crystal alignment film, and tilted alignment of several degrees is also included in the category of horizontal alignment.
[ラジカル発生膜形成組成物]
本発明に用いるラジカル発生膜を形成するためのラジカル発生膜形成組成物は、成分として、重合体を含有し、ラジカルを発生しうる基を含有する。その際、当該組成物は、ラジカルを発生しうる基が結合した重合体を含有するものであってもよいし、ラジカルを発生しうる基を有する化合物と、ベース樹脂となる重合体との組成物であってもよい。このような組成物を塗布、硬化して膜を形成することにより、ラジカルを発生しうる基が膜中に固定化されたラジカル発生膜を得ることができる。ラジカルを発生しうる基は、ラジカル重合を誘発する有機基であることが好ましい。
[Radical-generating film-forming composition]
The radical-generating film-forming composition for forming the radical-generating film used in the present invention contains a polymer and a group capable of generating radicals as components. In this case, the composition may contain a polymer to which a radical-generating group is bonded, or the composition may be a composition of a compound having a radical-generating group and a polymer serving as the base resin. It may be a thing. By coating and curing such a composition to form a film, a radical-generating film in which radical-generating groups are immobilized can be obtained. The radical-generating group is preferably an organic group that induces radical polymerization.
そのような、ラジカル重合を誘発する有機基としては下記構造で表される[X-1]~[X-18]、[W]、[Y]、[Z]で表される有機基が挙げられる。
(式[X-1]~[X-18]中、*は化合物分子の重合性不飽和結合以外の部分との結合部位を示し、S1、S2はそれぞれ独立して-O-、-NR-、-S-を表し、Rは水素原子又は炭素原子数1~4のアルキル基を表し、R1,R2はそれぞれ独立して水素原子、ハロゲン原子、炭素数1~4のアルキル基を表す)
(式[W]、[Y]、[Z]中、*は化合物分子の重合性不飽和結合以外の部分との結合部位を示し、Arは有機基及び/又はハロゲン原子を置換基として有しても良いフェニレン、ナフチレン、及びビフェニレンからなる群より選ばれる芳香族炭化水素基を示し、R9及びR10は、それぞれ独立に、炭素数1~10のアルキル基又は炭素数1~10のアルコキシ基を表し、R9とR10がアルキル基の場合、末端で互いに結合し環構造を形成していても良い。Qは下記のいずれかの構造を表す。
(式中、R11は-CH2-、-NR-、-O-、又は-S-を表し、Rは水素原子又は炭素原子数1~4のアルキル基を表し、*は化合物分子のQ以外の部分との結合部位を示す。)
R12は水素原子、ハロゲン原子、炭素数1~10のアルキル基又は炭素数1~10のアルコキシ基を表す。)
Examples of such organic groups that induce radical polymerization include organic groups represented by [X-1] to [X-18], [W], [Y], and [Z] shown in the following structure. It will be done.
(In formulas [X-1] to [X-18], * indicates a bonding site with a portion other than the polymerizable unsaturated bond of the compound molecule, and S 1 and S 2 are each independently -O-, - NR-, -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R 1 and R 2 each independently represent a hydrogen atom, a halogen atom, or an alkyl group having 1 to 4 carbon atoms. )
(In the formulas [W], [Y], and [Z], * indicates a bonding site with a part other than a polymerizable unsaturated bond in the compound molecule, and Ar has an organic group and/or a halogen atom as a substituent. R 9 and R 10 each independently represent an alkyl group having 1 to 10 carbon atoms or an alkoxy group having 1 to 10 carbon atoms. When R 9 and R 10 are alkyl groups, they may be bonded to each other at the ends to form a ring structure. Q represents any of the following structures.
(In the formula, R 11 represents -CH 2 -, -NR-, -O-, or -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and * represents the Q of the compound molecule. (Indicates the binding site with other parts.)
R 12 represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, or an alkoxy group having 1 to 10 carbon atoms. )
重合体としては、例えばポリイミド前駆体、及びポリイミド、ポリウレア、ポリアミド、ポリアクリレート、ポリメタクリレートなどからなる群から選ばれる少なくとも1種の重合体が好ましい。 As the polymer, for example, a polyimide precursor and at least one polymer selected from the group consisting of polyimide, polyurea, polyamide, polyacrylate, polymethacrylate, etc. are preferable.
本発明に用いるラジカル発生膜を得るために、前記ラジカル重合を誘発する有機基を有する重合体を用いる場合、ラジカルを発生しうる基を有する重合体を得るには、モノマー成分として、メタクリル基、アクリル基、ビニル基、アリル基、クマリン基、スチリル基及びシンナモイル基から選択される少なくとも一種を含む光反応性の側鎖を有するモノマーや、紫外線照射により分解し、ラジカルを発生する部位を側鎖に有するモノマーを用いて製造することが好ましい。一方で、ラジカルを発生するモノマーはそれ自体が自発的に重合をしてしまうなどの問題点が考えられ、不安定化合物となってしまうため、合成のしやすさの点ではラジカル発生部位を有するジアミンから誘導される重合体が好ましく、より好ましくはポリアミック酸やポリアミック酸エステル等のポリイミド前駆体、ポリイミド、ポリウレア、ポリアミドなどが好ましい。 In order to obtain the radical-generating film used in the present invention, when using a polymer having an organic group that induces radical polymerization, in order to obtain a polymer having a group capable of generating radicals, as a monomer component, a methacrylic group, A monomer with a photoreactive side chain containing at least one selected from an acrylic group, a vinyl group, an allyl group, a coumarin group, a styryl group, and a cinnamoyl group, or a side chain with a moiety that decomposes and generates radicals when exposed to ultraviolet irradiation. It is preferable to manufacture using a monomer having the following. On the other hand, monomers that generate radicals may have problems such as spontaneous polymerization, resulting in unstable compounds. Polymers derived from diamines are preferred, and polyimide precursors such as polyamic acids and polyamic acid esters, polyimides, polyureas, polyamides, and the like are more preferred.
そのようなラジカル発生部位含有ジアミンは、具体的には、例えば、ラジカルを発生し重合可能な側鎖を有するジアミンであり、下記の一般式(6)で表されるジアミンを挙げることができるが、これに限定されるものではない。
(式(6)中、R6は単結合、-CH2-、-O-、-COO-、-OCO-、-NHCO-、-CONH-、-NH-、-CH2O-、-N(CH3)-、-CON(CH3)-、又は-N(CH3)CO-を表し、
R7は単結合、又は非置換もしくはフッ素原子によって置換されている炭素数1~20のアルキレン基を表し、当該アルキレン基の任意の-CH2-又は-CF2-の1以上は、それぞれ独立に-CH=CH-、二価の炭素環、および二価の複素環から選ばれる基で置き換えられていてもよく、さらに、次に挙げるいずれかの基、すなわち、-O-、-COO-、-OCO-、-NHCO-、-CONH-、又は-NH-が互いに隣り合わないことを条件に、これらの基で置き換えられていてもよい;
R8は、下記式:
(式[X-1]~[X-18]中、*は化合物分子のラジカル重合反応性基以外の部分との結合部位を示し、S1、S2はそれぞれ独立して-O-、-NR-、-S-を表し、Rは水素原子又は炭素原子数1~4のアルキル基を表し、R12は水素原子、ハロゲン原子、炭素数1~10のアルキル基又は炭素数1~10のアルコキシ基を表し、R1,R2はそれぞれ独立して水素原子、ハロゲン原子、炭素数1~4のアルキル基を表す)
Specifically, such a diamine containing a radical generating site is, for example, a diamine having a side chain that generates a radical and can be polymerized, such as a diamine represented by the following general formula (6). , but is not limited to this.
(In formula (6), R 6 is a single bond, -CH 2 -, -O-, -COO-, -OCO-, -NHCO-, -CONH-, -NH-, -CH 2 O-, -N (CH 3 )-, -CON(CH 3 )-, or -N(CH 3 )CO-,
R 7 represents a single bond or an alkylene group having 1 to 20 carbon atoms that is unsubstituted or substituted with a fluorine atom, and one or more of arbitrary -CH 2 - or -CF 2 - of the alkylene group are each independently may be substituted with a group selected from -CH=CH-, divalent carbocycle, and divalent heterocycle, and further, any of the following groups, namely -O-, -COO- , -OCO-, -NHCO-, -CONH-, or -NH- may be substituted with these groups, provided that they are not adjacent to each other;
R8 is the following formula:
(In formulas [X-1] to [X-18], * indicates a bonding site with a moiety other than the radical polymerization reactive group of the compound molecule, and S 1 and S 2 are each independently -O-, - NR-, -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R 12 represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, or an alkyl group having 1 to 10 carbon atoms. represents an alkoxy group, and R 1 and R 2 each independently represent a hydrogen atom, a halogen atom, or an alkyl group having 1 to 4 carbon atoms)
式(6)における二つのアミノ基(-NH2)の結合位置は限定されない。具体的には、側鎖の結合基に対して、ベンゼン環上の2,3の位置、2,4の位置、2,5の位置、2,6の位置、3,4の位置、3,5の位置が挙げられる。なかでも、ポリアミック酸を合成する際の反応性の観点から、2,4の位置、2,5の位置、又は3,5の位置が好ましい。ジアミンを合成する際の容易性も加味すると、2,4の位置、又は3,5の位置がより好ましい。 The bonding positions of the two amino groups (-NH 2 ) in formula (6) are not limited. Specifically, with respect to the bonding group of the side chain, the 2,3 position, the 2,4 position, the 2,5 position, the 2,6 position, the 3,4 position, the 3, 5 positions are mentioned. Among these, the 2,4 position, the 2,5 position, or the 3,5 position are preferred from the viewpoint of reactivity when synthesizing polyamic acid. Considering the ease of synthesizing the diamine, positions 2 and 4 or positions 3 and 5 are more preferable.
メタクリル基、アクリル基、ビニル基、アリル基、クマリン基、スチリル基及びシンナモイル基からなる群から選ばれる少なくとも1種を含む光反応性基を有するジアミンとしては、具体的には、以下のような化合物が挙げられるが、これらに限定されるものではない。
(式中、J1は単結合、-O-、-COO-、-NHCO-、又は-NH-より選ばれる結合基であり、J2は単結合、又は非置換もしくはフッ素原子によって置換されている炭素数1~20のアルキレン基を表す。)
Specifically, diamines having a photoreactive group containing at least one selected from the group consisting of methacrylic group, acrylic group, vinyl group, allyl group, coumarin group, styryl group, and cinnamoyl group include the following: Examples include, but are not limited to, compounds.
(In the formula, J 1 is a single bond, -O-, -COO-, -NHCO-, or -NH-, and J 2 is a single bond, or unsubstituted or substituted with a fluorine atom. represents an alkylene group having 1 to 20 carbon atoms.)
紫外線照射により分解し、ラジカルが発生する部位を側鎖として有するジアミンは、下記の一般式(7)で表されるジアミンを挙げることができるが、これに限定されるものではない。
(式(7)中、T1及びT2は、それぞれ独立に、単結合、-O-、-S-、-COO-、-OCO-、-NHCO-、-CONH-、-NH-、-CH2O-、-N(CH3)-、-CON(CH3)-、又は-N(CH3)CO-であり、
Sは単結合、又は非置換もしくはフッ素原子によって置換されている炭素数1~20のアルキレン基を表し、当該アルキレン基の任意の-CH2-又は-CF2-の1以上は、それぞれ独立に-CH=CH-、二価の炭素環、および二価の複素環から選ばれる基で置き換えられていてもよく、さらに、次に挙げるいずれかの基、すなわち、-O-、-COO-、-OCO-、-NHCO-、-CONH-、又は-NH-が互いに隣り合わないことを条件に、これらの基で置き換えられていてもよく、
Jは下記式で表される有機基であり、
(式[W]、[Y]、[Z]中、*はT2との結合箇所を表し、Arは有機基及び/又はハロゲン原子を置換基として有しても良いフェニレン、ナフチレン、及びビフェニレンからなる群より選ばれる芳香族炭化水素基を示し、R9及びR10は、それぞれ独立に、炭素数1~10のアルキル基又は炭素数1~10のアルコキシ基を表し、Qは下記のいずれかの構造を表す。
(式中、R11は-CH2-、-NR-、-O-、又は-S-を表し、Rは水素原子又は炭素原子数1~4のアルキル基を表し、*は化合物分子のQ以外の部分との結合部位を示す。)
R12は水素原子、ハロゲン原子、炭素数1~10のアルキル基又は炭素数1~10のアルコキシ基を表す。))
Examples of the diamine having a side chain that is decomposed by ultraviolet irradiation to generate radicals include diamines represented by the following general formula (7), but are not limited thereto.
(In formula (7), T 1 and T 2 are each independently a single bond, -O-, -S-, -COO-, -OCO-, -NHCO-, -CONH-, -NH-, - CH 2 O-, -N(CH 3 )-, -CON(CH 3 )-, or -N(CH 3 )CO-,
S represents a single bond or an unsubstituted or fluorine-substituted alkylene group having 1 to 20 carbon atoms, and one or more of -CH 2 - or -CF 2 - in the alkylene group are each independently It may be substituted with a group selected from -CH=CH-, a divalent carbocycle, and a divalent heterocycle, and further, any of the following groups, namely -O-, -COO-, -OCO-, -NHCO-, -CONH-, or -NH- may be substituted with these groups, provided that they are not adjacent to each other,
J is an organic group represented by the following formula,
(In the formulas [W], [Y], and [Z], * represents the bonding site with T2 , and Ar represents phenylene, naphthylene, and biphenylene which may have an organic group and/or a halogen atom as a substituent. R 9 and R 10 each independently represent an alkyl group having 1 to 10 carbon atoms or an alkoxy group having 1 to 10 carbon atoms, and Q is any of the following. represents the structure of
(In the formula, R 11 represents -CH 2 -, -NR-, -O-, or -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and * represents the Q of the compound molecule. (Indicates the binding site with other parts.)
R 12 represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, or an alkoxy group having 1 to 10 carbon atoms. ))
上記式(7)における二つのアミノ基(-NH2)の結合位置は限定されない。具体的には、側鎖の結合基に対して、ベンゼン環上の2,3の位置、2,4の位置、2,5の位置、2,6の位置、3,4の位置、3,5の位置が挙げられる。なかでも、ポリアミック酸を合成する際の反応性の観点から、2,4の位置、2,5の位置、又は3,5の位置が好ましい。ジアミンを合成する際の容易性も加味すると、2,4の位置、又は3,5の位置がより好ましい。 The bonding positions of the two amino groups (-NH 2 ) in the above formula (7) are not limited. Specifically, with respect to the bonding group of the side chain, the 2,3 position, the 2,4 position, the 2,5 position, the 2,6 position, the 3,4 position, the 3, 5 positions are mentioned. Among these, the 2,4 position, the 2,5 position, or the 3,5 position are preferred from the viewpoint of reactivity when synthesizing polyamic acid. Considering the ease of synthesizing the diamine, positions 2 and 4 or positions 3 and 5 are more preferable.
特に合成の容易さ、汎用性の高さ、特性などの点を鑑みて、下記式で表される構造が最も好ましいが、これらに限定されない。
(式中、nは2~8の整数である。)
In particular, in view of ease of synthesis, high versatility, properties, etc., the structure represented by the following formula is most preferable, but the structure is not limited thereto.
(In the formula, n is an integer from 2 to 8.)
上記のジアミンは、ラジカル発生膜とした際の液晶配向性、重合反応における感度、電圧保持特性、蓄積電荷などの特性に応じて、1種類又は2種類以上を混合して使用することもできる。 The above-mentioned diamines can be used alone or in combination of two or more, depending on the properties such as liquid crystal orientation, sensitivity in polymerization reaction, voltage holding characteristics, and accumulated charge when forming a radical generating film.
このようなラジカル重合が発生する部位を有するジアミンは、ラジカル発生膜形成組成物に含有させる重合体の合成に用いるジアミン成分全体の5~50モル%となる量を用いることが好ましく、より好ましくは10~40モル%であり、特に好ましくは15~30モル%である。 It is preferable to use the diamine having a site where radical polymerization occurs in an amount of 5 to 50 mol% of the total diamine component used in the synthesis of the polymer to be included in the radical-generating film-forming composition, and more preferably. It is 10 to 40 mol%, particularly preferably 15 to 30 mol%.
なお、本発明のラジカル発生膜に用いる重合体をジアミンから得る場合、本発明の効果を損わない限りにおいて、上記ラジカルが発生する部位を有するジアミン以外の、その他のジアミンをジアミン成分として併用することができる。具体的には、例えば、p-フェニレンジアミン、2,3,5,6-テトラメチル-p-フェニレンジアミン、2,5-ジメチル-p-フェニレンジアミン、m-フェニレンジアミン、2,4-ジメチル-m-フェニレンジアミン、2,5-ジアミノトルエン、2,6-ジアミノトルエン、2,5-ジアミノフェノール、2,4-ジアミノフェノール、3,5-ジアミノフェノール、3,5-ジアミノベンジルアルコール、2,4-ジアミノベンジルアルコール、4,6-ジアミノレゾルシノール、4,4’-ジアミノビフェニル、3,3’-ジメチル-4,4’-ジアミノビフェニル、3,3’-ジメトキシ-4,4’-ジアミノビフェニル、3,3’-ジヒドロキシ-4,4’-ジアミノビフェニル、3,3’-ジカルボキシ-4,4’-ジアミノビフェニル、3,3’-ジフルオロ-4,4’-ビフェニル、3,3’-トリフルオロメチル-4,4’-ジアミノビフェニル、3,4’-ジアミノビフェニル、3,3’-ジアミノビフェニル、2,2’-ジアミノビフェニル、2,3’-ジアミノビフェニル、4,4’-ジアミノジフェニルメタン、3,3’-ジアミノジフェニルメタン、3,4’-ジアミノジフェニルメタン、2,2’-ジアミノジフェニルメタン、2,3’-ジアミノジフェニルメタン、4,4’-ジアミノジフェニルエーテル、3,3’-ジアミノジフェニルエーテル、3,4’-ジアミノジフェニルエーテル、2,2’-ジアミノジフェニルエーテル、2,3’-ジアミノジフェニルエーテル、4,4’-スルホニルジアニリン、3,3’-スルホニルジアニリン、ビス(4-アミノフェニル)シラン、ビス(3-アミノフェニル)シラン、ジメチル-ビス(4-アミノフェニル)シラン、ジメチル-ビス(3-アミノフェニル)シラン、4,4’-チオジアニリン、3,3’-チオジアニリン、4,4’-ジアミノジフェニルアミン、3,3’-ジアミノジフェニルアミン、3,4’-ジアミノジフェニルアミン、2,2’-ジアミノジフェニルアミン、2,3’-ジアミノジフェニルアミン、N-メチル(4,4’-ジアミノジフェニル)アミン、N-メチル(3,3’-ジアミノジフェニル)アミン、N-メチル(3,4’-ジアミノジフェニル)アミン、N-メチル(2,2’-ジアミノジフェニル)アミン、N-メチル(2,3’-ジアミノジフェニル)アミン、4,4’-ジアミノベンゾフェノン、3,3’-ジアミノベンゾフェノン、3,4’-ジアミノベンゾフェノン、1,4-ジアミノナフタレン、2,2’-ジアミノベンゾフェノン、2,3’-ジアミノベンゾフェノン、1,5-ジアミノナフタレン、1,6-ジアミノナフタレン、1,7-ジアミノナフタレン、1,8-ジアミノナフタレン、2,5-ジアミノナフタレン、2,6-ジアミノナフタレン、2,7-ジアミノナフタレン、2,8-ジアミノナフタレン、1,2-ビス(4-アミノフェニル)エタン、1,2-ビス(3-アミノフェニル)エタン、1,3-ビス(4-アミノフェニル)プロパン、1,3-ビス(3-アミノフェニル)プロパン、1,4-ビス(4-アミノフェニル)ブタン、1,4-ビス(3-アミノフェニル)ブタン、ビス(3,5-ジエチル-4-アミノフェニル)メタン、1,4-ビス(4-アミノフェノキシ)ベンゼン、1,3-ビス(4-アミノフェノキシ)ベンゼン、1,4-ビス(4-アミノフェニル)ベンゼン、1,3-ビス(4-アミノフェニル)ベンゼン、1,4-ビス(4-アミノベンジル)ベンゼン、1,3-ビス(4-アミノフェノキシ)ベンゼン、4,4’-[1,4-フェニレンビス(メチレン)]ジアニリン、4,4’-[1,3-フェニレンビス(メチレン)]ジアニリン、3,4’-[1,4-フェニレンビス(メチレン)]ジアニリン、3,4’-[1,3-フェニレンビス(メチレン)]ジアニリン、3,3’-[1,4-フェニレンビス(メチレン)]ジアニリン、3,3’-[1,3-フェニレンビス(メチレン)]ジアニリン、1,4-フェニレンビス[(4-アミノフェニル)メタノン]、1,4-フェニレンビス[(3-アミノフェニル)メタノン]、1,3-フェニレンビス[(4-アミノフェニル)メタノン]、1,3-フェニレンビス[(3-アミノフェニル)メタノン]、1,4-フェニレンビス(4-アミノベンゾエート)、1,4-フェニレンビス(3-アミノベンゾエート)、1,3-フェニレンビス(4-アミノベンゾエート)、1,3-フェニレンビス(3-アミノベンゾエート)、ビス(4-アミノフェニル)テレフタレート、ビス(3-アミノフェニル)テレフタレート、ビス(4-アミノフェニル)イソフタレート、ビス(3-アミノフェニル)イソフタレート、N,N’-(1,4-フェニレン)ビス(4-アミノベンズアミド)、N,N’-(1,3-フェニレン)ビス(4-アミノベンズアミド)、N,N’-(1,4-フェニレン)ビス(3-アミノベンズアミド)、N,N’-(1,3-フェニレン)ビス(3-アミノベンズアミド)、N,N’-ビス(4-アミノフェニル)テレフタルアミド、N,N’-ビス(3-アミノフェニル)テレフタルアミド、N,N’-ビス(4-アミノフェニル)イソフタルアミド、N,N’-ビス(3-アミノフェニル)イソフタルアミド、9,10-ビス(4-アミノフェニル)アントラセン、4,4’-ビス(4-アミノフェノキシ)ジフェニルスルホン、2,2’-ビス[4-(4-アミノフェノキシ)フェニル]プロパン、2,2’-ビス[4-(4-アミノフェノキシ)フェニル]ヘキサフルオロプロパン、2,2’-ビス(4-アミノフェニル)ヘキサフルオロプロパン、2,2’-ビス(3-アミノフェニル)ヘキサフルオロプロパン、2,2’-ビス(3-アミノ-4-メチルフェニル)ヘキサフルオロプロパン、2,2’-ビス(4-アミノフェニル)プロパン、2,2’-ビス(3-アミノフェニル)プロパン、2,2’-ビス(3-アミノ-4-メチルフェニル)プロパン、トランス-1,4-ビス(4-アミノフェニル)シクロヘキサン、3,5-ジアミノ安息香酸、2,5-ジアミノ安息香酸、ビス(4-アミノフェノキシ)メタン、1,2-ビス(4-アミノフェノキシ)エタン、1,3-ビス(4-アミノフェノキシ)プロパン、1,3-ビス(3-アミノフェノキシ)プロパン、1,4-ビス(4-アミノフェノキシ)ブタン、1,4-ビス(3-アミノフェノキシ)ブタン、1,5-ビス(4-アミノフェノキシ)ペンタン、1,5-ビス(3-アミノフェノキシ)ペンタン、1,6-ビス(4-アミノフェノキシ)へキサン、1,6-ビス(3-アミノフェノキシ)へキサン、1,7-ビス(4-アミノフェノキシ)ヘプタン、1,7-ビス(3-アミノフェノキシ)ヘプタン、1,8-ビス(4-アミノフェノキシ)オクタン、1,8-ビス(3-アミノフェノキシ)オクタン、1,9-ビス(4-アミノフェノキシ)ノナン、1,9-ビス(3-アミノフェノキシ)ノナン、1,10-ビス(4-アミノフェノキシ)デカン、1,10-ビス(3-アミノフェノキシ)デカン、1,11-ビス(4-アミノフェノキシ)ウンデカン、1,11-ビス(3-アミノフェノキシ)ウンデカン、1,12-ビス(4-アミノフェノキシ)ドデカン、1,12-ビス(3-アミノフェノキシ)ドデカンなどの芳香族ジアミン;ビス(4-アミノシクロヘキシル)メタン、ビス(4-アミノ-3-メチルシクロヘキシル)メタンなどの脂環式ジアミン;1,3-ジアミノプロパン、1,4-ジアミノブタン、1,5-ジアミノペンタン、1,6-ジアミノへキサン、1,7-ジアミノヘプタン、1,8-ジアミノオクタン、1,9-ジアミノノナン、1,10-ジアミノデカン、1,11-ジアミノウンデカン、1,12-ジアミノドデカンなどの脂肪族ジアミン;1,3-ビス[2-(p-アミノフェニル)エチル]ウレア、1,3-ビス[2-(p-アミノフェニル)エチル]-1-ターシャリーブチルオキシカルボニルウレア等のウレア構造を有するジアミン;N-p-アミノフェニル-4-p-アミノフェニル(ターシャリーブチルオキシカルボニル)アミノメチルピペリジン等の含窒素不飽和複素環構造を有するジアミン;N-ターシャリーブトキシカルボニル-N-(2-(4-アミノフェニル)エチル)-N-(4-アミノベンジル)アミン等のN-Boc基を有するジアミン等が挙げられる。 In addition, when the polymer used in the radical-generating membrane of the present invention is obtained from a diamine, other diamines other than the diamine having the above-mentioned radical-generating site may be used in combination as a diamine component, as long as the effects of the present invention are not impaired. be able to. Specifically, for example, p-phenylenediamine, 2,3,5,6-tetramethyl-p-phenylenediamine, 2,5-dimethyl-p-phenylenediamine, m-phenylenediamine, 2,4-dimethyl- m-phenylenediamine, 2,5-diaminotoluene, 2,6-diaminotoluene, 2,5-diaminophenol, 2,4-diaminophenol, 3,5-diaminophenol, 3,5-diaminobenzyl alcohol, 2, 4-Diaminobenzyl alcohol, 4,6-diaminoresorcinol, 4,4'-diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminobiphenyl, 3,3'-dimethoxy-4,4'-diaminobiphenyl , 3,3'-dihydroxy-4,4'-diaminobiphenyl, 3,3'-dicarboxy-4,4'-diaminobiphenyl, 3,3'-difluoro-4,4'-biphenyl, 3,3' -Trifluoromethyl-4,4'-diaminobiphenyl, 3,4'-diaminobiphenyl, 3,3'-diaminobiphenyl, 2,2'-diaminobiphenyl, 2,3'-diaminobiphenyl, 4,4'- Diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 2,2'-diaminodiphenylmethane, 2,3'-diaminodiphenylmethane, 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether , 3,4'-diaminodiphenyl ether, 2,2'-diaminodiphenyl ether, 2,3'-diaminodiphenyl ether, 4,4'-sulfonyldianiline, 3,3'-sulfonyldianiline, bis(4-aminophenyl) Silane, bis(3-aminophenyl)silane, dimethyl-bis(4-aminophenyl)silane, dimethyl-bis(3-aminophenyl)silane, 4,4'-thiodianiline, 3,3'-thiodianiline, 4,4 '-Diaminodiphenylamine, 3,3'-diaminodiphenylamine, 3,4'-diaminodiphenylamine, 2,2'-diaminodiphenylamine, 2,3'-diaminodiphenylamine, N-methyl(4,4'-diaminodiphenyl)amine , N-methyl(3,3'-diaminodiphenyl)amine, N-methyl(3,4'-diaminodiphenyl)amine, N-methyl(2,2'-diaminodiphenyl)amine, N-methyl(2,3 '-Diaminodiphenyl)amine, 4,4'-diaminobenzophenone, 3,3'-diaminobenzophenone, 3,4'-diaminobenzophenone, 1,4-diaminonaphthalene, 2,2'-diaminobenzophenone, 2,3' -Diaminobenzophenone, 1,5-diaminonaphthalene, 1,6-diaminonaphthalene, 1,7-diaminonaphthalene, 1,8-diaminonaphthalene, 2,5-diaminonaphthalene, 2,6-diaminonaphthalene, 2,7- Diaminonaphthalene, 2,8-diaminonaphthalene, 1,2-bis(4-aminophenyl)ethane, 1,2-bis(3-aminophenyl)ethane, 1,3-bis(4-aminophenyl)propane, 1 , 3-bis(3-aminophenyl)propane, 1,4-bis(4-aminophenyl)butane, 1,4-bis(3-aminophenyl)butane, bis(3,5-diethyl-4-aminophenyl) ) Methane, 1,4-bis(4-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,4-bis(4-aminophenyl)benzene, 1,3-bis(4- aminophenyl)benzene, 1,4-bis(4-aminobenzyl)benzene, 1,3-bis(4-aminophenoxy)benzene, 4,4'-[1,4-phenylenebis(methylene)]dianiline, 4 , 4'-[1,3-phenylenebis(methylene)]dianiline, 3,4'-[1,4-phenylenebis(methylene)]dianiline, 3,4'-[1,3-phenylenebis(methylene)] ] Dianiline, 3,3'-[1,4-phenylenebis(methylene)]dianiline, 3,3'-[1,3-phenylenebis(methylene)]dianiline, 1,4-phenylenebis[(4-amino phenyl)methanone], 1,4-phenylenebis[(3-aminophenyl)methanone], 1,3-phenylenebis[(4-aminophenyl)methanone], 1,3-phenylenebis[(3-aminophenyl) Methanone], 1,4-phenylenebis(4-aminobenzoate), 1,4-phenylenebis(3-aminobenzoate), 1,3-phenylenebis(4-aminobenzoate), 1,3-phenylenebis(3-aminobenzoate) -aminobenzoate), bis(4-aminophenyl) terephthalate, bis(3-aminophenyl) terephthalate, bis(4-aminophenyl) isophthalate, bis(3-aminophenyl) isophthalate, N,N'-(1 ,4-phenylene)bis(4-aminobenzamide), N,N'-(1,3-phenylene)bis(4-aminobenzamide), N,N'-(1,4-phenylene)bis(3-amino benzamide), N,N'-(1,3-phenylene)bis(3-aminobenzamide), N,N'-bis(4-aminophenyl)terephthalamide, N,N'-bis(3-aminophenyl) Terephthalamide, N,N'-bis(4-aminophenyl)isophthalamide, N,N'-bis(3-aminophenyl)isophthalamide, 9,10-bis(4-aminophenyl)anthracene, 4,4' -bis(4-aminophenoxy)diphenylsulfone, 2,2'-bis[4-(4-aminophenoxy)phenyl]propane, 2,2'-bis[4-(4-aminophenoxy)phenyl]hexafluoropropane , 2,2'-bis(4-aminophenyl)hexafluoropropane, 2,2'-bis(3-aminophenyl)hexafluoropropane, 2,2'-bis(3-amino-4-methylphenyl)hexa Fluoropropane, 2,2'-bis(4-aminophenyl)propane, 2,2'-bis(3-aminophenyl)propane, 2,2'-bis(3-amino-4-methylphenyl)propane, trans -1,4-bis(4-aminophenyl)cyclohexane, 3,5-diaminobenzoic acid, 2,5-diaminobenzoic acid, bis(4-aminophenoxy)methane, 1,2-bis(4-aminophenoxy) Ethane, 1,3-bis(4-aminophenoxy)propane, 1,3-bis(3-aminophenoxy)propane, 1,4-bis(4-aminophenoxy)butane, 1,4-bis(3-amino phenoxy)butane, 1,5-bis(4-aminophenoxy)pentane, 1,5-bis(3-aminophenoxy)pentane, 1,6-bis(4-aminophenoxy)hexane, 1,6-bis( 3-aminophenoxy)hexane, 1,7-bis(4-aminophenoxy)heptane, 1,7-bis(3-aminophenoxy)heptane, 1,8-bis(4-aminophenoxy)octane, 1,8 -Bis(3-aminophenoxy)octane, 1,9-bis(4-aminophenoxy)nonane, 1,9-bis(3-aminophenoxy)nonane, 1,10-bis(4-aminophenoxy)decane, 1 , 10-bis(3-aminophenoxy)decane, 1,11-bis(4-aminophenoxy)undecane, 1,11-bis(3-aminophenoxy)undecane, 1,12-bis(4-aminophenoxy)dodecane , 1,12-bis(3-aminophenoxy)dodecane; alicyclic diamines such as bis(4-aminocyclohexyl)methane, bis(4-amino-3-methylcyclohexyl)methane; 1,3 -Diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1,10- Aliphatic diamines such as diaminodecane, 1,11-diaminoundecane, 1,12-diaminododecane; 1,3-bis[2-(p-aminophenyl)ethyl]urea, 1,3-bis[2-(p Diamines having a urea structure such as -aminophenyl)ethyl]-1-tert-butyloxycarbonyl urea; nitrogen-containing diamines such as N-p-aminophenyl-4-p-aminophenyl (tert-butyloxycarbonyl) aminomethylpiperidine Diamines having an unsaturated heterocyclic structure; diamines having an N-Boc group such as N-tert-butoxycarbonyl-N-(2-(4-aminophenyl)ethyl)-N-(4-aminobenzyl)amine, etc. Can be mentioned.
上記その他のジアミンは、ラジカル発生膜とした際の液晶配向性、重合反応における感度、電圧保持特性、蓄積電荷などの特性に応じて、1種類又は2種類以上を混合して使用することもできる。 The other diamines mentioned above can be used alone or in combination of two or more, depending on the properties such as liquid crystal alignment, sensitivity in polymerization reaction, voltage holding characteristics, and accumulated charge when used as a radical generating film. .
重合体がポリアミック酸である場合の合成で、上記のジアミン成分と反応させるテトラカルボン酸二無水物は特に限定されない。具体的には、ピロメリット酸、2,3,6,7-ナフタレンテトラカルボン酸、1,2,5,6-ナフタレンテトラカルボン酸、1,4,5,8-ナフタレンテトラカルボン酸、2,3,6,7-アントラセンテトラカルボン酸、1,2,5,6-アントラセンテトラカルボン酸、3,3’,4,4’-ビフェニルテトラカルボン酸、2,3,3’,4’-ビフェニルテトラカルボン酸、ビス(3,4-ジカルボキシフェニル)エーテル、3,3’,4,4’-ベンゾフェノンテトラカルボン酸、ビス(3,4-ジカルボキシフェニル)スルホン、ビス(3,4-ジカルボキシフェニル)メタン、2,2-ビス(3,4-ジカルボキシフェニル)プロパン、1,1,1,3,3,3-ヘキサフルオロ-2,2-ビス(3,4-ジカルボキシフェニル)プロパン、ビス(3,4-ジカルボキシフェニル)ジメチルシラン、ビス(3,4-ジカルボキシフェニル)ジフェニルシラン、2,3,4,5-ピリジンテトラカルボン酸、2,6-ビス(3,4-ジカルボキシフェニル)ピリジン、3,3’,4,4’-ジフェニルスルホンテトラカルボン酸、3,4,9,10-ペリレンテトラカルボン酸、1,3-ジフェニル-1,2,3,4-シクロブタンテトラカルボン酸、オキシジフタルテトラカルボン酸、1,2,3,4-シクロブタンテトラカルボン酸、1,2,3,4-シクロペンタンテトラカルボン酸、1,2,4,5-シクロヘキサンテトラカルボン酸、1,2,3,4-テトラメチル-1,2,3,4-シクロブタンテトラカルボン酸、1,2-ジメチル-1,2,3,4-シクロブタンテトラカルボン酸、1,3-ジメチル-1,2,3,4-シクロブタンテトラカルボン酸、1,2,3,4-シクロヘプタンテトラカルボン酸、2,3,4,5-テトラヒドロフランテトラカルボン酸、3,4-ジカルボキシ-1-シクロへキシルコハク酸、2,3,5-トリカルボキシシクロペンチル酢酸、3,4-ジカルボキシ-1,2,3,4-テトラヒドロ-1-ナフタレンコハク酸、ビシクロ[3,3,0]オクタン-2,4,6,8-テトラカルボン酸、ビシクロ[4,3,0]ノナン-2,4,7,9-テトラカルボン酸、ビシクロ[4,4,0]デカン-2,4,7,9-テトラカルボン酸、ビシクロ[4,4,0]デカン-2,4,8,10-テトラカルボン酸、トリシクロ[6.3.0.0<2,6>]ウンデカン-3,5,9,11-テトラカルボン酸、1,2,3,4-ブタンテトラカルボン酸、4-(2,5-ジオキソテトラヒドロフラン-3-イル)-1,2,3,4-テトラヒドロナフタレン-1,2-ジカルボン酸、ビシクロ[2,2,2]オクト-7-エン-2,3,5,6-テトラカルボン酸、5-(2,5-ジオキソテトラヒドロフリル)-3-メチル-3-シクロへキサン-1,2-ジカルボン酸、テトラシクロ[6,2,1,1,0<2,7>]ドデカ-4,5,9,10-テトラカルボン酸、3,5,6-トリカルボキシノルボルナン-2:3,5:6ジカルボン酸、1,2,4,5-シクロヘキサンテトラカルボン酸等のテトラカルボン酸の二無水物が挙げられる。 When the polymer is a polyamic acid, the tetracarboxylic dianhydride to be reacted with the diamine component is not particularly limited. Specifically, pyromellitic acid, 2,3,6,7-naphthalenetetracarboxylic acid, 1,2,5,6-naphthalenetetracarboxylic acid, 1,4,5,8-naphthalenetetracarboxylic acid, 2, 3,6,7-anthracenetetracarboxylic acid, 1,2,5,6-anthracenetetracarboxylic acid, 3,3',4,4'-biphenyltetracarboxylic acid, 2,3,3',4'-biphenyl Tetracarboxylic acid, bis(3,4-dicarboxyphenyl) ether, 3,3',4,4'-benzophenone tetracarboxylic acid, bis(3,4-dicarboxyphenyl) sulfone, bis(3,4-dicarboxyphenyl) ether, carboxyphenyl)methane, 2,2-bis(3,4-dicarboxyphenyl)propane, 1,1,1,3,3,3-hexafluoro-2,2-bis(3,4-dicarboxyphenyl) Propane, bis(3,4-dicarboxyphenyl)dimethylsilane, bis(3,4-dicarboxyphenyl)diphenylsilane, 2,3,4,5-pyridinetetracarboxylic acid, 2,6-bis(3,4 -dicarboxyphenyl)pyridine, 3,3',4,4'-diphenylsulfonetetracarboxylic acid, 3,4,9,10-perylenetetracarboxylic acid, 1,3-diphenyl-1,2,3,4- Cyclobutanetetracarboxylic acid, oxydiphthaletetracarboxylic acid, 1,2,3,4-cyclobutanetetracarboxylic acid, 1,2,3,4-cyclopentanetetracarboxylic acid, 1,2,4,5-cyclohexanetetracarboxylic acid acid, 1,2,3,4-tetramethyl-1,2,3,4-cyclobutanetetracarboxylic acid, 1,2-dimethyl-1,2,3,4-cyclobutanetetracarboxylic acid, 1,3-dimethyl -1,2,3,4-cyclobutanetetracarboxylic acid, 1,2,3,4-cycloheptanetetracarboxylic acid, 2,3,4,5-tetrahydrofurantetracarboxylic acid, 3,4-dicarboxy-1- Cyclohexylsuccinic acid, 2,3,5-tricarboxycyclopentyl acetic acid, 3,4-dicarboxy-1,2,3,4-tetrahydro-1-naphthalenesuccinic acid, bicyclo[3,3,0]octane-2 , 4,6,8-tetracarboxylic acid, bicyclo[4,3,0]nonane-2,4,7,9-tetracarboxylic acid, bicyclo[4,4,0]decane-2,4,7,9 -tetracarboxylic acid, bicyclo[4,4,0]decane-2,4,8,10-tetracarboxylic acid, tricyclo[6.3.0.0<2,6>]undecane-3,5,9, 11-tetracarboxylic acid, 1,2,3,4-butanetetracarboxylic acid, 4-(2,5-dioxotetrahydrofuran-3-yl)-1,2,3,4- tetrahydronaphthalene -1,2 -dicarboxylic acid, bicyclo[2,2,2]oct-7-ene-2,3,5,6-tetracarboxylic acid, 5-(2,5-dioxotetrahydrofuryl)-3-methyl-3-cyclo Hexane-1,2-dicarboxylic acid, tetracyclo[6,2,1,1,0<2,7>]dodeca-4,5,9,10-tetracarboxylic acid, 3,5,6-tricarboxynorbornane Examples include dianhydrides of tetracarboxylic acids such as -2:3,5:6 dicarboxylic acid and 1,2,4,5-cyclohexanetetracarboxylic acid.
勿論、テトラカルボン酸二無水物も、ラジカル発生膜とした際の液晶配向性、重合反応における感度、電圧保持特性、蓄積電荷などの特性に応じて、1種類又は2種類以上併用してもよい。 Of course, one type or two or more types of tetracarboxylic dianhydride may be used in combination depending on the characteristics such as liquid crystal orientation, sensitivity in polymerization reaction, voltage holding characteristics, and accumulated charge when forming a radical generating film. .
重合体がポリアミド酸エステルである場合の合成で、上記のジアミン成分と反応させるテトラカルボン酸ジアルキルエステルの構造は特に限定されないが、その具体例を以下に挙げる。
脂肪族テトラカルボン酸ジエステルの具体的な例としては1,2,3,4-シクロブタンテトラカルボン酸ジアルキルエステル、1,2-ジメチル-1,2,3,4-シクロブタンテトラカルボン酸ジアルキルエステル、1,3-ジメチル-1,2,3,4-シクロブタンテトラカルボン酸ジアルキルエステル、1,2,3,4-テトラメチル-1,2,3,4-シクロブタンテトラカルボン酸ジアルキルエステル、1,2,3,4-シクロペンタンテトラカルボン酸ジアルキルエステル、2,3,4,5-テトラヒドロフランテトラカルボン酸ジアルキルエステル、1,2,4,5-シクロヘキサンテトラカルボン酸ジアルキルエステル、3,4-ジカルボキシ-1-シクロヘキシルコハク酸ジアルキルエステル、3,4-ジカルボキシ-1,2,3,4-テトラヒドロ-1-ナフタレンコハク酸ジアルキルエステル、1,2,3,4-ブタンテトラカルボン酸ジアルキルエステル、ビシクロ[3,3,0]オクタン-2,4,6,8-テトラカルボン酸ジアルキルエステル、3,3’,4,4’-ジシクロヘキシルテトラカルボン酸ジアルキルエステル、2,3,5-トリカルボキシシクロペンチル酢酸ジアルキルエステル、シス-3,7-ジブチルシクロオクタ-1,5-ジエン-1,2,5,6-テトラカルボン酸ジアルキルエステル、トリシクロ[4.2.1.0<2,5>]ノナン-3,4,7,8-テトラカルボン酸-3,4:7,8-ジアルキルエステル、ヘキサシクロ[6.6.0.1<2,7>.0<3,6>.1<9,14>.0<10,13>]ヘキサデカン-4,5,11,12-テトラカルボン酸-4,5:11,12-ジアルキルエステル、4-(2,5-ジオキソテトラヒドロフラン-3-イル)-1,2,3,4-テトラヒドロナフタレン-1,2-ジカルボン酸ジアルキルエステルなどが挙げられる。
In the synthesis when the polymer is a polyamic acid ester, the structure of the tetracarboxylic acid dialkyl ester to be reacted with the above-mentioned diamine component is not particularly limited, but specific examples thereof are listed below.
Specific examples of aliphatic tetracarboxylic acid diesters include 1,2,3,4-cyclobutanetetracarboxylic acid dialkyl ester, 1,2-dimethyl-1,2,3,4-cyclobutanetetracarboxylic acid dialkyl ester, 1 , 3-dimethyl-1,2,3,4-cyclobutanetetracarboxylic acid dialkyl ester, 1,2,3,4-tetramethyl-1,2,3,4-cyclobutanetetracarboxylic acid dialkyl ester, 1,2, 3,4-cyclopentanetetracarboxylic acid dialkyl ester, 2,3,4,5-tetrahydrofurantetracarboxylic acid dialkyl ester, 1,2,4,5-cyclohexanetetracarboxylic acid dialkyl ester, 3,4-dicarboxy-1 -Cyclohexylsuccinic acid dialkyl ester, 3,4-dicarboxy-1,2,3,4-tetrahydro-1-naphthalenesuccinic acid dialkyl ester, 1,2,3,4-butanetetracarboxylic acid dialkyl ester, bicyclo[3 ,3,0]octane-2,4,6,8-tetracarboxylic acid dialkyl ester, 3,3',4,4'-dicyclohexyltetracarboxylic acid dialkyl ester, 2,3,5-tricarboxycyclopentyl acetic acid dialkyl ester , cis-3,7-dibutylcycloocta-1,5-diene-1,2,5,6-tetracarboxylic acid dialkyl ester, tricyclo[4.2.1.0<2,5>]nonane-3, 4,7,8-tetracarboxylic acid-3,4:7,8-dialkyl ester, hexacyclo[6.6.0.1<2,7>. 0<3,6>. 1<9,14>. 0<10,13>] hexadecane-4,5,11,12-tetracarboxylic acid-4,5:11,12-dialkyl ester, 4-(2,5-dioxotetrahydrofuran-3-yl)-1, Examples include 2,3,4-tetrahydronaphthalene - 1,2-dicarboxylic acid dialkyl ester.
芳香族テトラカルボン酸ジアルキルエステルとしては、ピロメリット酸ジアルキルエステル、3,3’,4,4’-ビフェニルテトラカルボン酸ジアルキルエステル、2,2’,3,3’-ビフェニルテトラカルボン酸ジアルキルエステル、2,3,3’,4-ビフェニルテトラカルボン酸ジアルキルエステル、3,3’,4,4’-ベンゾフェノンテトラカルボン酸ジアルキルエステル、2,3,3’,4’-ベンゾフェノンテトラカルボン酸ジアルキルエステル、ビス(3,4-ジカルボキシフェニル)エーテルジアルキルエステル、ビス(3,4-ジカルボキシフェニル)スルホンジアルキルエステル、1,2,5,6-ナフタレンテトラカルボン酸ジアルキルエステル、2,3,6,7-ナフタレンテトラカルボン酸ジアルキルエステルなどが挙げられる。 Examples of the aromatic tetracarboxylic acid dialkyl ester include pyromellitic acid dialkyl ester, 3,3',4,4'-biphenyltetracarboxylic acid dialkyl ester, 2,2',3,3'-biphenyltetracarboxylic acid dialkyl ester, 2,3,3',4-biphenyltetracarboxylic acid dialkyl ester, 3,3',4,4'-benzophenonetetracarboxylic acid dialkyl ester, 2,3,3',4'-benzophenonetetracarboxylic acid dialkyl ester, Bis(3,4-dicarboxyphenyl)ether dialkyl ester, bis(3,4-dicarboxyphenyl)sulfone dialkyl ester, 1,2,5,6-naphthalenetetracarboxylic acid dialkyl ester, 2,3,6,7 -Naphthalenetetracarboxylic acid dialkyl ester, etc.
重合体がポリウレアである場合の合成で、上記のジアミン成分と反応させるジイソシアネートに関しては、特に限定はせず、入手性等に応じて使用することができる。ジイソシアネートの具体的構造を以下に示す。
式中R2、R3は炭素数1~10の脂肪族炭化水素を表す。
In the synthesis when the polymer is polyurea, the diisocyanate to be reacted with the above-mentioned diamine component is not particularly limited, and can be used depending on availability and the like. The specific structure of the diisocyanate is shown below.
In the formula, R 2 and R 3 represent an aliphatic hydrocarbon having 1 to 10 carbon atoms.
K-1~K-5に示す脂肪族ジイソシアネートは、反応性は劣るが溶媒溶解性を向上させるメリットがあり、K-6~K-7の示すような芳香族ジイソシアネートは反応性に富み耐熱性を向上させる効果があるが、溶媒溶解性を低下させる欠点が挙げられる。汎用性や特性面において特に好ましくはK-1、K-7、K-8、K-9、K-10が好ましく、電気特性の加点ではK-12、液晶配向性の観点ではK-13が特に好ましい。ジイソシアネートは1種以上を併用して使用することもでき、得たい特性に応じて種々適用するのが好ましい。
また、一部のジイソシアネートを上記で説明したテトラカルボン酸二無水物に置き換えることもでき、ポリアミック酸とポリウレアの共重合体のような形で使用しても良く、化学イミド化によってポリイミドとポリウレアの共重合体のような形で使用しても良い。
The aliphatic diisocyanates shown in K-1 to K-5 are inferior in reactivity but have the advantage of improving solvent solubility, while the aromatic diisocyanates shown in K-6 to K-7 are highly reactive and heat resistant. However, it has the disadvantage of decreasing solvent solubility. Particularly preferred are K-1, K-7, K-8, K-9, and K-10 in terms of versatility and properties, K-12 is preferred in terms of electrical properties, and K-13 is preferred in terms of liquid crystal orientation. Particularly preferred. One or more diisocyanates can be used in combination, and it is preferable to use various diisocyanates depending on the desired properties.
In addition, some diisocyanates can be replaced with the above-mentioned tetracarboxylic dianhydride, and they can also be used in the form of a copolymer of polyamic acid and polyurea, and chemical imidization can be used to create a copolymer of polyimide and polyurea. It may also be used in the form of a copolymer.
重合体がポリアミドである場合の合成で、反応させるジカルボン酸の構造は特に限定されないが、あえて具体例を以下に挙げれば以下のとおりである。脂肪族ジカルボン酸の具体例として、マロン酸、蓚酸、ジメチルマロン酸、コハク酸、フマル酸、グルタル酸、アジピン酸、ムコン酸、2-メチルアジピン酸、トリメチルアジピン酸、ピメリン酸、2,2-ジメチルグルタル酸、3,3-ジエチルコハク酸、アゼライン酸、セバシン酸およびスベリン酸等のジカルボン酸を挙げることができる。 In the synthesis when the polymer is polyamide, the structure of the dicarboxylic acid to be reacted is not particularly limited, but specific examples are as follows. Specific examples of aliphatic dicarboxylic acids include malonic acid, oxalic acid, dimethylmalonic acid, succinic acid, fumaric acid, glutaric acid, adipic acid, muconic acid, 2-methyladipic acid, trimethyladipic acid, pimelic acid, 2,2- Mention may be made of dicarboxylic acids such as dimethylglutaric acid, 3,3-diethylsuccinic acid, azelaic acid, sebacic acid and suberic acid.
脂環式系のジカルボン酸としては、1,1-シクロプロパンジカルボン酸、1,2-シクロプロパンジカルボン酸、1,1-シクロブタンジカルボン酸、1,2-シクロブタンジカルボン酸、1,3-シクロブタンジカルボン酸、3,4-ジフェニル-1,2-シクロブタンジカルボン酸、2,4-ジフェニル-1,3-シクロブタンジカルボン酸、1-シクロブテン-1,2-ジカルボン酸、1-シクロブテン-3,4-ジカルボン酸、1,1-シクロペンタンジカルボン酸、1,2-シクロペンタンジカルボン酸、1,3-シクロペンタンジカルボン酸、1,1-シクロヘキサンジカルボン酸、1,2-シクロヘキサンジカルボン酸、1,3-シクロヘキサンジカルボン酸、1,4-シクロヘキサンジカルボン酸、1,4-(2-ノルボルネン)ジカルボン酸、ノルボルネン-2,3-ジカルボン酸、ビシクロ[2.2.2]オクタン-1,4-ジカルボン酸、ビシクロ[2.2.2]オクタン-2,3-ジカルボン酸、2,5-ジオキソ-1,4-ビシクロ[2.2.2]オクタンジカルボン酸、1,3-アダマンタンジカルボン酸、4,8-ジオキソ-1,3-アダマンタンジカルボン酸、2,6-スピロ[3.3]ヘプタンジカルボン酸、1,3-アダマンタン二酢酸、カンファー酸等を挙げることができる。 Examples of alicyclic dicarboxylic acids include 1,1-cyclopropanedicarboxylic acid, 1,2-cyclopropanedicarboxylic acid, 1,1-cyclobutanedicarboxylic acid, 1,2-cyclobutanedicarboxylic acid, and 1,3-cyclobutanedicarboxylic acid. acid, 3,4-diphenyl-1,2-cyclobutanedicarboxylic acid, 2,4-diphenyl-1,3-cyclobutanedicarboxylic acid, 1-cyclobutene-1,2-dicarboxylic acid, 1-cyclobutene-3,4-dicarboxylic acid Acid, 1,1-cyclopentanedicarboxylic acid, 1,2-cyclopentanedicarboxylic acid, 1,3-cyclopentanedicarboxylic acid, 1,1-cyclohexanedicarboxylic acid, 1,2-cyclohexanedicarboxylic acid, 1,3-cyclohexane Dicarboxylic acid, 1,4-cyclohexanedicarboxylic acid, 1,4-(2-norbornene)dicarboxylic acid, norbornene-2,3-dicarboxylic acid, bicyclo[2.2.2]octane-1,4-dicarboxylic acid, bicyclo [2.2.2] Octane-2,3-dicarboxylic acid, 2,5-dioxo-1,4-bicyclo[2.2.2]octanedicarboxylic acid, 1,3-adamantanedicarboxylic acid, 4,8- Examples include dioxo-1,3-adamantane dicarboxylic acid, 2,6-spiro[3.3]heptane dicarboxylic acid, 1,3-adamantane diacetic acid, and camphoric acid.
芳香族ジカルボン酸としては、o-フタル酸、イソフタル酸、テレフタル酸、5-メチルイソフタル酸、5-tert-ブチルイソフタル酸、5-アミノイソフタル酸、5-ヒドロキシイソフタル酸、2,5-ジメチルテレフタル酸、テトラメチルテレフタル酸、1,4-ナフタレンジカルボン酸、2,5-ナフタレンジカルボン酸、2,6-ナフタレンジカルボン酸、2,7-ナフタレンジカルボン酸、1,4-アントラセンジカルボン酸、1,4-アントラキノンジカルボン酸、2,5-ビフェニルジカルボン酸、4,4’-ビフェニルジカルボン酸、1,5-ビフェニレンジカルボン酸、4,4”-ターフェニルジカルボン酸、4,4’-ジフェニルメタンジカルボン酸、4,4’-ジフェニルエタンジカルボン酸、4,4’-ジフェニルプロパンジカルボン酸、4,4’-ジフェニルヘキサフルオロプロパンジカルボン酸、4,4’-ジフェニルエーテルジカルボン酸、4,4’-ビベンジルジカルボン酸、4,4’-スチルベンジカルボン酸、4,4’-トランジカルボン酸、4,4’-カルボニル二安息香酸、4,4’-スルホニル二安息香酸、4,4’-ジチオ二安息香酸、p-フェニレン二酢酸、3,3’-p-フェニレンジプロピオン酸、4-カルボキシ桂皮酸、p-フェニレンジアクリル酸、3,3’-[4,4’-(メチレンジ-p-フェニレン)]ジプロピオン酸、4,4’-[4,4’-(オキシジ-p-フェニレン)]ジプロピオン酸、4,4’-[4,4’-(オキシジ-p-フェニレン)]二酪酸、(イソプロピリデンジ-p-フェニレンジオキシ)二酪酸、ビス(p-カルボキシフェニル)ジメチルシラン等のジカルボン酸を挙げることができる。 Aromatic dicarboxylic acids include o-phthalic acid, isophthalic acid, terephthalic acid, 5-methylisophthalic acid, 5-tert-butyl isophthalic acid, 5-aminoisophthalic acid, 5-hydroxyisophthalic acid, 2,5-dimethylterephthalic acid. Acid, tetramethyl terephthalic acid, 1,4-naphthalene dicarboxylic acid, 2,5-naphthalene dicarboxylic acid, 2,6-naphthalene dicarboxylic acid, 2,7-naphthalene dicarboxylic acid, 1,4-anthracene dicarboxylic acid, 1,4 -Anthraquinonedicarboxylic acid, 2,5-biphenyldicarboxylic acid, 4,4'-biphenyldicarboxylic acid, 1,5-biphenylenedicarboxylic acid, 4,4''-terphenyldicarboxylic acid, 4,4'-diphenylmethanedicarboxylic acid, 4 , 4'-diphenyletherdicarboxylic acid, 4,4'-diphenylpropanedicarboxylic acid, 4,4'-diphenylhexafluoropropanedicarboxylic acid, 4,4'-diphenyletherdicarboxylic acid, 4,4'-bibenzyldicarboxylic acid, 4,4'-Stilbendicarboxylic acid, 4,4'-trandicarboxylic acid, 4,4'-carbonyl dibenzoic acid, 4,4'-sulfonyl dibenzoic acid, 4,4'-dithiodibenzoic acid, p- Phenylene diacetic acid, 3,3'-p-phenylene dipropionic acid, 4-carboxycinnamic acid, p-phenylene diacrylic acid, 3,3'-[4,4'-(methylenedi-p-phenylene)]dipropion acid, 4,4'-[4,4'-(oxydi-p-phenylene)]dipropionic acid, 4,4'-[4,4'-(oxydi-p-phenylene)]dibutyric acid, (isopropylene) Examples include dicarboxylic acids such as di-p-phenylenedioxy) dibutyric acid and bis(p-carboxyphenyl)dimethylsilane.
複素環を含むジカルボン酸としては、1,5-(9-オキソフルオレン)ジカルボン酸、3,4-フランジカルボン酸、4,5-チアゾールジカルボン酸、2-フェニル-4,5-チアゾールジカルボン酸、1,2,5-チアジアゾール-3,4-ジカルボン酸、1,2,5-オキサジアゾール-3,4-ジカルボン酸、2,3-ピリジンジカルボン酸、2,4-ピリジンジカルボン酸、2,5-ピリジンジカルボン酸、2,6-ピリジンジカルボン酸、3,4-ピリジンジカルボン酸、3,5-ピリジンジカルボン酸等を挙げることができる。 Examples of dicarboxylic acids containing heterocycles include 1,5-(9-oxofluorene)dicarboxylic acid, 3,4-furandicarboxylic acid, 4,5-thiazoledicarboxylic acid, 2-phenyl-4,5-thiazoledicarboxylic acid, 1,2,5-thiadiazole-3,4-dicarboxylic acid, 1,2,5-oxadiazole-3,4-dicarboxylic acid, 2,3-pyridinedicarboxylic acid, 2,4-pyridinedicarboxylic acid, 2, Examples include 5-pyridinedicarboxylic acid, 2,6-pyridinedicarboxylic acid, 3,4-pyridinedicarboxylic acid, and 3,5-pyridinedicarboxylic acid.
上記の各種ジカルボン酸は酸ジハライドあるいは無水の構造のものであってもよい。これらのジカルボン酸類は、特に直線的な構造のポリアミドを与えることが可能なジカルボン酸類であることが液晶分子の配向性を保つ上から好ましい。これらの中でも、テレフタル酸、イソフタル酸、1,4-シクロヘキサンジカルボン酸、4,4’-ビフェニルジカルボン酸、4,4’-ジフェニルメタンジカルボン酸、4,4’-ジフェニルエタンジカルボン酸、4,4’-ジフェニルプロパンジカルボン酸、4,4’-ジフェニルヘキサフルオロプロパンジカルボン酸、2,2-ビス(フェニル)プロパンジカルボン酸、4、4-ターフェニルジカルボン酸、2,6-ナフタレンジカルボン酸、2,5-ピリジンジカルボン酸またはこれらの酸ジハライド等が好ましく用いられる。これらの化合物には異性体が存在するものもあるが、それらを含む混合物であってもよい。また、2種以上の化合物を併用してもよい。なお、本発明に使用するジカルボン酸類は、上記の例示化合物に限定されるものではない。 The various dicarboxylic acids mentioned above may have an acid dihalide or anhydride structure. These dicarboxylic acids are particularly preferably dicarboxylic acids that can provide a polyamide with a linear structure in order to maintain the orientation of liquid crystal molecules. Among these, terephthalic acid, isophthalic acid, 1,4-cyclohexanedicarboxylic acid, 4,4'-biphenyldicarboxylic acid, 4,4'-diphenylmethanedicarboxylic acid, 4,4'-diphenylethanedicarboxylic acid, 4, 4'-diphenylpropanedicarboxylic acid, 4,4'-diphenylhexafluoropropanedicarboxylic acid, 2,2-bis(phenyl)propanedicarboxylic acid, 4,4-terphenyldicarboxylic acid, 2,6-naphthalenedicarboxylic acid, 2 , 5-pyridinedicarboxylic acid or their acid dihalides are preferably used. Although some of these compounds exist as isomers, a mixture containing them may be used. Further, two or more kinds of compounds may be used in combination. Note that the dicarboxylic acids used in the present invention are not limited to the above-mentioned exemplified compounds.
原料であるジアミン(「ジアミン成分」とも記載する)と原料であるテトラカルボン酸二無水物(「テトラカルボン酸二無水物成分」とも記載する)、テトラカルボン酸ジエステル、ジイソシアネート及びジカルボン酸から選ばれる成分との反応により、ポリアミック酸、ポリアミック酸エステル、ポリウレア、ポリアミドを得るにあたっては、公知の合成手法を用いることができる。一般的には、ジアミン成分とテトラカルボン酸二無水物成分、テトラカルボン酸ジエステル、ジイソシアネート及びジカルボン酸から選ばれる一種以上の成分とを、有機溶媒中で反応させる方法である。 Selected from raw material diamine (also described as "diamine component"), raw material tetracarboxylic dianhydride (also described as "tetracarboxylic dianhydride component"), tetracarboxylic acid diester, diisocyanate, and dicarboxylic acid. In order to obtain polyamic acid, polyamic acid ester, polyurea, and polyamide by reaction with the components, known synthesis techniques can be used. Generally, it is a method in which a diamine component and one or more components selected from a tetracarboxylic dianhydride component, a tetracarboxylic diester, a diisocyanate, and a dicarboxylic acid are reacted in an organic solvent.
ジアミン成分とテトラカルボン酸二無水物成分との反応は、有機溶媒中で比較的容易に進行し、かつ副生成物が発生しない点で有利である。 The reaction between the diamine component and the tetracarboxylic dianhydride component is advantageous in that it proceeds relatively easily in an organic solvent and does not generate any by-products.
上記反応に用いる有機溶媒としては、生成した重合体が溶解するものであれば特に限定されない。さらに、重合体が溶解しない有機溶媒であっても、生成した重合体が析出しない範囲で、上記溶媒に混合して使用してもよい。なお、有機溶媒中の水分は、重合反応を阻害し、さらには生成した重合体を加水分解させる原因となるので、有機溶媒は脱水乾燥させたものを用いることが好ましい。 The organic solvent used in the above reaction is not particularly limited as long as it dissolves the produced polymer. Furthermore, even an organic solvent in which the polymer does not dissolve may be mixed with the above solvent and used as long as the produced polymer does not precipitate. Note that since water in the organic solvent inhibits the polymerization reaction and further causes hydrolysis of the produced polymer, it is preferable to use an organic solvent that has been dehydrated and dried.
有機溶媒としては、例えば、N,N-ジメチルホルムアミド、N,N-ジメチルアセトアミド、N,N-ジエチルホルムアミド、N-メチルホルムアミド、N-メチル-2-ピロリドン、N-エチル-2-ピロリドン、2-ピロリドン、1,3-ジメチル-2-イミダゾリジノン、3-メトキシ-N,N-ジメチルプロパンアミド、N-メチルカプロラクタム、ジメチルスルホキシド、テトラメチル尿素、ピリジン、ジメチルスルホン、ヘキサメチルスルホキシド、γ-ブチロラクトン、イソプロピルアルコール、メトキシメチルペンタノール、ジペンテン、エチルアミルケトン、メチルノニルケトン、メチルエチルケトン、メチルイソアミルケトン、メチルイソプロピルケトン、メチルセロソルブ、エチルセロソルブ、メチルセロソルブアセテート、ブチルセロソルブアセテート、エチルセロソルブアセテート、ブチルカルビトール、エチルカルビトール、エチレングリコール、エチレングリコールモノアセテート、エチレングリコールモノイソプロピルエーテル、エチレングリコールモノブチルエーテル、プロピレングリコール、プロピレングリコールモノアセテート、プロピレングリコールモノメチルエーテル、プロピレングリコールモノブチルエーテル、プロピレングリコール-tert-ブチルエーテル、ジプロピレングリコールモノメチルエーテル、プロピレングリコールモノメチルエーテルアセテート、ジエチレングリコール、ジエチレングリコールモノアセテート、ジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル、ジプロピレングリコールモノアセテートモノメチルエーテル、ジプロピレングリコールモノメチルエーテル、ジプロピレングリコールモノエチルエーテル、ジプロピレングリコールモノアセテートモノエチルエーテル、ジプロピレングリコールモノプロピルエーテル、ジプロピレングリコールモノアセテートモノプロピルエーテル、3-メチル-3-メトキシブチルアセテート、トリプロピレングリコールメチルエーテル、3-メチル-3-メトキシブタノール、ジイソプロピルエーテル、エチルイソブチルエーテル、ジイソブチレン、アミルアセテート、ブチルブチレート、ブチルエーテル、ジイソブチルケトン、メチルシクロへキセン、プロピルエーテル、ジヘキシルエーテル、ジオキサン、n-へキサン、n-ペンタン、n-オクタン、ジエチルエーテル、シクロヘキサノン、エチレンカーボネート、プロピレンカーボネート、乳酸メチル、乳酸エチル、酢酸メチル、酢酸エチル、酢酸n-ブチル、酢酸プロピレングリコールモノエチルエーテル、ピルビン酸メチル、ピルビン酸エチル、3-メトキシプロピオン酸メチル、3-エトキシプロピオン酸メチルエチル、3-メトキシプロピオン酸エチル、3-エトキシプロピオン酸、3-メトキシプロピオン酸、3-メトキシプロピオン酸プロピル、3-メトキシプロピオン酸ブチル、ジグライム、4-ヒドロキシ-4-メチル-2-ペンタノン、2-エチル-1-ヘキサノール等が挙げられる。これらの有機溶媒は単独で使用しても、混合して使用してもよい。 Examples of the organic solvent include N,N-dimethylformamide, N,N-dimethylacetamide, N,N-diethylformamide, N-methylformamide, N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, 2 -Pyrrolidone, 1,3-dimethyl-2-imidazolidinone, 3-methoxy-N,N-dimethylpropanamide, N-methylcaprolactam, dimethylsulfoxide, tetramethylurea, pyridine, dimethylsulfone, hexamethylsulfoxide, γ- Butyrolactone, isopropyl alcohol, methoxymethylpentanol, dipentene, ethyl amyl ketone, methyl nonyl ketone, methyl ethyl ketone, methyl isoamyl ketone, methyl isopropyl ketone, methyl cellosolve, ethyl cellosolve , methyl cellosolve acetate, butyl cellosolve acetate, ethyl cellosolve acetate, butyl Carbitol, ethyl carbitol, ethylene glycol, ethylene glycol monoacetate, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, propylene glycol, propylene glycol monoacetate, propylene glycol monomethyl ether, propylene glycol monobutyl ether, propylene glycol-tert-butyl ether , dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol, diethylene glycol monoacetate, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, dipropylene glycol monoacetate monomethyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol Monoacetate monoethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monoacetate monopropyl ether, 3-methyl-3-methoxybutyl acetate, tripropylene glycol methyl ether, 3-methyl-3-methoxybutanol, diisopropyl ether, Ethyl isobutyl ether, diisobutylene, amyl acetate, butyl butyrate, butyl ether, diisobutyl ketone, methylcyclohexene, propyl ether, dihexyl ether, dioxane, n-hexane, n-pentane, n-octane, diethyl ether, cyclohexanone, ethylene Carbonate, propylene carbonate, methyl lactate, ethyl lactate, methyl acetate, ethyl acetate, n-butyl acetate, propylene glycol monoethyl acetate, methyl pyruvate, ethyl pyruvate, methyl 3-methoxypropionate, methyl 3-ethoxypropionate Ethyl, ethyl 3-methoxypropionate, 3-ethoxypropionic acid, 3-methoxypropionic acid, propyl 3-methoxypropionate, butyl 3-methoxypropionate, diglyme, 4-hydroxy-4-methyl-2-pentanone, 2 -ethyl-1-hexanol and the like. These organic solvents may be used alone or in combination.
ジアミン成分とテトラカルボン酸二無水物成分とを有機溶媒中で反応させる際には、ジアミン成分を有機溶媒に分散あるいは溶解させた溶液を攪拌し、テトラカルボン酸二無水物成分をそのまま、又は有機溶媒に分散あるいは溶解させて添加する方法、逆にテトラカルボン酸二無水物成分を有機溶媒に分散あるいは溶解させた溶液にジアミン成分を添加する方法、テトラカルボン酸二無水物成分とジアミン成分とを交互に添加する方法などが挙げられ、これらのいずれの方法を用いてもよい。また、ジアミン成分又はテトラカルボン酸二無水物成分が複数種の化合物からなる場合は、あらかじめ混合した状態で反応させてもよく、個別に順次反応させてもよく、さらに個別に反応させた低分子量体を混合反応させ高分子量体としてもよい。 When a diamine component and a tetracarboxylic dianhydride component are reacted in an organic solvent, a solution in which the diamine component is dispersed or dissolved in an organic solvent is stirred, and the tetracarboxylic dianhydride component is reacted as it is or in an organic solvent. A method in which the diamine component is added by dispersing or dissolving it in a solvent, a method in which the diamine component is added to a solution in which the tetracarboxylic dianhydride component is dispersed or dissolved in an organic solvent, and a method in which the diamine component is added by dispersing or dissolving the tetracarboxylic dianhydride component in an organic solvent. Examples include a method of adding them alternately, and any of these methods may be used. In addition, when the diamine component or the tetracarboxylic dianhydride component consists of multiple types of compounds, they may be reacted in a pre-mixed state, they may be reacted individually in sequence, or they may be reacted individually in a low molecular weight It is also possible to make a high molecular weight product by subjecting the polymers to a mixed reaction.
ジアミン成分とテトラカルボン酸二無水物成分とを反応させる際の温度は、任意の温度を選択することができ、例えば、-20~100℃、好ましくは-5~80℃の範囲である。また、反応は任意の濃度で行うことができ、例えば、反応液に対してジアミン成分とテトラカルボン酸二無水物成分との合計量が1~50質量%、好ましくは5~30質量%である。 Any temperature can be selected for the reaction of the diamine component and the tetracarboxylic dianhydride component, and is, for example, in the range of -20 to 100°C, preferably in the range of -5 to 80°C. Further, the reaction can be carried out at any concentration; for example, the total amount of the diamine component and the tetracarboxylic dianhydride component is 1 to 50% by mass, preferably 5 to 30% by mass, based on the reaction solution. .
上記の重合反応における、ジアミン成分の合計モル数に対するテトラカルボン酸二無水物成分の合計モル数の比率は、得ようとするポリアミック酸の分子量に応じて任意の値を選択することができる。通常の重縮合反応と同様に、このモル比が1.0に近いほど生成するポリアミック酸の分子量は大きくなる。好ましい範囲としては、0.8~1.2である。 In the above polymerization reaction, the ratio of the total number of moles of the tetracarboxylic dianhydride component to the total number of moles of the diamine component can be selected as an arbitrary value depending on the molecular weight of the polyamic acid to be obtained. Similar to normal polycondensation reactions, the closer this molar ratio is to 1.0, the larger the molecular weight of the polyamic acid produced becomes. The preferred range is 0.8 to 1.2.
本発明に用いられる重合体を合成する方法は、上記の手法に限定されず、ポリアミック酸を合成する場合は、一般的なポリアミック酸の合成方法と同様に、上記のテトラカルボン酸二無水物に代えて、対応する構造のテトラカルボン酸又はテトラカルボン酸ジハライドなどのテトラカルボン酸誘導体を用い、公知の方法で反応させることでも対応するポリアミック酸を得ることができる。また、ポリウレアを合成する場合は、ジアミンとジイソシアネートとを反応させればよい。ポリアミック酸エステルまたはポリアミドを製造する際には、ジアミンと、テトラカルボン酸ジエステル及びジカルボン酸から選ばれる成分を、公知の縮合剤の存在下で、又は、公知の方法で酸ハライドに誘導したのちに、ジアミンと反応させればよい。 The method for synthesizing the polymer used in the present invention is not limited to the above method, and when synthesizing polyamic acid, the above-mentioned tetracarboxylic dianhydride Alternatively, the corresponding polyamic acid can also be obtained by using a tetracarboxylic acid having a corresponding structure or a tetracarboxylic acid derivative such as a tetracarboxylic acid dihalide and reacting it by a known method. Moreover, when synthesizing polyurea, diamine and diisocyanate may be reacted. When producing polyamic acid esters or polyamides, components selected from diamines, tetracarboxylic diesters, and dicarboxylic acids are converted into acid halides in the presence of known condensing agents or by known methods. , may be reacted with diamine.
上記したポリアミック酸をイミド化させてポリイミドとする方法としては、ポリアミック酸の溶液をそのまま加熱する熱イミド化、ポリアミック酸の溶液に触媒を添加する触媒イミド化が挙げられる。なお、ポリアミック酸からポリイミドへのイミド化率は、電圧保持率を高くできることから、30%以上であることが好ましく、30~99%であることがより好ましい。一方、白化特性の、すなわち、ワニス中での重合体の析出を抑制する観点から、70%以下が好ましい。両方の特性を加味すると、40~80%がより好ましい。 Examples of methods for imidizing the above-mentioned polyamic acid to produce polyimide include thermal imidization in which a polyamic acid solution is directly heated, and catalytic imidization in which a catalyst is added to a polyamic acid solution. Note that the imidization rate from polyamic acid to polyimide is preferably 30% or more, more preferably 30 to 99%, since the voltage holding rate can be increased. On the other hand, from the viewpoint of whitening properties, that is, suppressing polymer precipitation in the varnish, it is preferably 70% or less. Considering both characteristics, 40 to 80% is more preferable.
ポリアミック酸を溶液中で熱イミド化させる場合の温度は、通常100~400℃、好ましくは120~250℃であり、イミド化反応により生成する水を系外に除きながら行うことが好ましい。 The temperature when polyamic acid is thermally imidized in a solution is usually 100 to 400°C, preferably 120 to 250°C, and it is preferable to carry out the process while removing water produced by the imidization reaction from the system.
ポリアミック酸の触媒イミド化は、ポリアミック酸の溶液に、塩基性触媒と酸無水物とを添加し、通常-20~250℃、好ましくは0~180℃で攪拌することにより行うことができる。塩基性触媒の量は、アミド酸基の通常0.5~30モル倍、好ましくは2~20モル倍であり、酸無水物の量は、アミド酸基の通常1~50モル倍、好ましくは3~30モル倍である。塩基性触媒としては、ピリジン、トリエチルアミン、トリメチルアミン、トリブチルアミン、トリオクチルアミンなどを挙げることができ、中でもピリジンは反応を進行させるのに適度な塩基性を持つので好ましい。酸無水物としては、無水酢酸、無水トリメリット酸、無水ピロメリット酸などを挙げることができるが、中でも無水酢酸を用いると反応終了後の精製が容易となるので好ましい。触媒イミド化によるイミド化率は、触媒量と反応温度、反応時間などを調節することにより制御することができる。 Catalytic imidization of polyamic acid can be carried out by adding a basic catalyst and an acid anhydride to a solution of polyamic acid, and stirring the mixture usually at -20 to 250°C, preferably at 0 to 180°C. The amount of the basic catalyst is usually 0.5 to 30 times the mole of the amic acid group, preferably 2 to 20 times the mole, and the amount of the acid anhydride is usually 1 to 50 times the mole of the amic acid group, preferably It is 3 to 30 times the mole. Examples of the basic catalyst include pyridine, triethylamine, trimethylamine, tributylamine, trioctylamine, etc. Among them, pyridine is preferred because it has an appropriate basicity to advance the reaction. Examples of the acid anhydride include acetic anhydride, trimellitic anhydride, pyromellitic anhydride, etc. Among them, acetic anhydride is preferably used because it facilitates purification after the reaction is completed. The imidization rate by catalytic imidization can be controlled by adjusting the amount of catalyst, reaction temperature, reaction time, etc.
重合体の反応溶液から、生成した重合体を回収する場合には、反応溶液を貧溶媒に投入して沈殿させればよい。沈殿生成に用いる貧溶媒としては、メタノール、アセトン、ヘキサン、ブチルセロソルブ、ヘプタン、メチルエチルケトン、メチルイソブチルケトン、エタノール、トルエン、ベンゼン、水などを挙げることができる。貧溶媒に投入して沈殿させたポリマーは、濾過して回収した後、常圧あるいは減圧下で、常温あるいは加熱して乾燥することができる。また、沈殿回収した重合体を、有機溶媒に再溶解させ、再沈殿回収する操作を2~10回繰り返すと、重合体中の不純物を少なくすることができる。この際の貧溶媒として、例えば、アルコール類、ケトン類、炭化水素などが挙げられ、これらの内から選ばれる3種類以上の貧溶媒を用いると、より一層精製の効率が上がるので好ましい。 When recovering a produced polymer from a polymer reaction solution, the reaction solution may be poured into a poor solvent to precipitate it. Examples of the poor solvent used for precipitation include methanol, acetone, hexane, butyl cellosolve, heptane, methyl ethyl ketone, methyl isobutyl ketone, ethanol, toluene, benzene, water, and the like. The polymer precipitated in a poor solvent can be collected by filtration and then dried under normal pressure or reduced pressure, at room temperature or by heating. Further, by repeating the operation of redissolving the precipitated and recovered polymer in an organic solvent and reprecipitating and recovering it 2 to 10 times, the amount of impurities in the polymer can be reduced. Examples of the poor solvent in this case include alcohols, ketones, hydrocarbons, etc. It is preferable to use three or more kinds of poor solvents selected from these, since the efficiency of purification will further increase.
また、前記ラジカル発生膜が、ラジカル重合を誘発する有機基を含有する重合体から成る場合、本発明に用いるラジカル発生膜形成組成物は、ラジカル重合を誘発する有機基を含有する重合体以外の他の重合体を含有していてもよい。その際、重合体全成分中における、他の重合体の含有量は5~95質量%が好ましく、より好ましくは30~70質量%である。 Further, when the radical generating film is made of a polymer containing an organic group that induces radical polymerization, the radical generating film forming composition used in the present invention is made of a polymer other than the polymer containing an organic group that induces radical polymerization. It may also contain other polymers. In this case, the content of other polymers in the total polymer components is preferably 5 to 95% by mass, more preferably 30 to 70% by mass.
ラジカル発生膜形成組成物が有する重合体の分子量は、ラジカル発生膜を塗布して得られるラジカル発生膜の強度、塗膜形成時の作業性、塗膜の均一性等を考慮した場合、GPC(Gel Permeation Chromatography)法で測定した重量平均分子量で、5,000~1,000,000が好ましく、より好ましくは、10,000~150,000である。 The molecular weight of the polymer contained in the radical-generating film-forming composition is determined by GPC ( The weight average molecular weight measured by Gel Permeation Chromatography method is preferably 5,000 to 1,000,000, more preferably 10,000 to 150,000.
本発明に用いるラジカル発生膜を、ラジカルを発生する基を有する化合物と重合体との組成物を塗布、硬化して膜を形成することにより膜中に固定化させて得る場合の重合体としては、上記の製造方法に準じて製造されるポリイミド前駆体、及びポリイミド、ポリウレア、ポリアミド、ポリアクリレート、ポリメタクリレートなどからなる群から選ばれる重合体であって、ラジカル重合が発生する部位を有するジアミンが、ラジカル発生膜形成組成物に含有させる重合体の合成に用いるジアミン成分全体の0モル%であるジアミン成分を用いて得られる少なくとも1種の重合体を用いてもよい。その際に添加するラジカルを発生する基を有する化合物としては、以下のものが挙げられる。 When the radical-generating film used in the present invention is obtained by fixing the composition in the film by applying and curing a composition of a compound having a radical-generating group and a polymer, the polymer is , a polyimide precursor produced according to the above production method, and a polymer selected from the group consisting of polyimide, polyurea, polyamide, polyacrylate, polymethacrylate, etc., and a diamine having a site where radical polymerization occurs. , at least one type of polymer obtained using a diamine component that is 0 mol % of the total diamine components used in the synthesis of the polymer to be included in the radical-generating film-forming composition may be used. Examples of the compound having a radical-generating group to be added at this time include the following.
熱でラジカルを発生する化合物としては、分解温度以上に加熱することにより、ラジカルを発生させる化合物である。このようなラジカル熱重合開始剤としては、例えば、ケトンパーオキサイド類(メチルエチルケトンパーオキサイド、シクロヘキサノンパーオキサイド等)、ジアシルパーオキサイド類(アセチルパーオキサイド、ベンゾイルパーオキサイド等)、ハイドロパーオキサイド類(過酸化水素、tert-ブチルハイドロパーオキサイド、クメンハイドロパーオキサイド等)、ジアルキルパーオキサイド類 (ジ-tert-ブチルパーオキサイド、ジクミルパーオキサイド、ジラウロイルパーオキサイド等)、パーオキシケタール類(ジブチルパーオキシシクロヘキサン等)、アルキルパーエステル類(パーオキシネオデカン酸-tert-ブチルエステル、パーオキシピバリン酸-tert-ブチルエステル、パーオキシ2-エチルシクロヘキサン酸-tert-アミルエステル等)、過硫酸塩類(過硫酸カリウム、過硫酸ナトリウム、過硫酸アンモニウム等)、アゾ系化合物(アゾビスイソブチロニトリル、および2,2’-ジ(2-ヒドロキシエチル)アゾビスイソブチロニトリル等)が挙げられる。このようなラジカル熱重合開始剤は、1種を単独で使用することもできるし、あるいは2種以上を組み合わせて使用することもできる。 A compound that generates radicals when heated is a compound that generates radicals when heated above the decomposition temperature. Such radical thermal polymerization initiators include, for example, ketone peroxides (methyl ethyl ketone peroxide, cyclohexanone peroxide, etc.), diacyl peroxides (acetyl peroxide, benzoyl peroxide, etc.), hydroperoxides (peroxide Hydrogen, tert-butyl hydroperoxide, cumene hydroperoxide, etc.), dialkyl peroxides (di-tert-butyl peroxide, dicumyl peroxide, dilauroyl peroxide, etc.), peroxyketals (dibutyl peroxycyclohexane) ), alkyl peresters (peroxyneodecanoic acid tert-butyl ester, peroxypivalic acid tert-butyl ester, peroxy 2-ethylcyclohexanoic acid tert-amyl ester, etc.), persulfates (potassium persulfate, (sodium persulfate, ammonium persulfate, etc.), and azo compounds (azobisisobutyronitrile, 2,2'-di(2-hydroxyethyl)azobisisobutyronitrile, etc.). Such radical thermal polymerization initiators can be used alone or in combination of two or more.
光でラジカルを発生する化合物としては、ラジカル重合を光照射によって開始する化合物であれば特に限定されない。このようなラジカル光重合開始剤としては、ベンゾフェノン、ミヒラーズケトン、4,4’-ビス(ジエチルアミノ)ベンゾフェノン、キサントン、チオキサントン、イソプロピルキサントン、2,4-ジエチルチオキサントン、2-エチルアントラキノン、アセトフェノン、2-ヒドロキシ-2-メチルプロピオフェノン、2-ヒドロキシ-2-メチル-4’-イソプロピルプロピオフェノン、1-ヒドロキシシクロヘキシルフェニルケトン、イソプロピルベンゾインエーテル、イソブチルベンゾインエーテル、2,2-ジエトキシアセトフェノン、2,2-ジメトキシ-2-フェニルアセトフェノン、カンファーキノン、ベンズアントロン、2-メチル-1-[4-(メチルチオ)フェニル]-2-モルホリノプロパン-1-オン、2-ベンジル-2-ジメチルアミノ-1-(4-モルホリノフェニル)-ブタノン-1、4-ジメチルアミノ安息香酸エチル、4-ジメチルアミノ安息香酸イソアミル、4,4’-ジ(t-ブチルペルオキシカルボニル)ベンゾフェノン、3,4,4’-トリ(t-ブチルペルオキシカルボニル)ベンゾフェノン、2,4,6-トリメチルベンゾイルジフェニルフォスフィンオキサイド、2-(4’-メトキシスチリル)-4,6-ビス(トリクロロメチル)-s-トリアジン、2-(3’,4’-ジメトキシスチリル)-4,6-ビス(トリクロロメチル)-s-トリアジン、2-(2’,4’-ジメトキシスチリル)-4,6-ビス(トリクロロメチル)-s-トリアジン、2-(2’-メトキシスチリル)-4,6-ビス(トリクロロメチル)-s-トリアジン、2-(4’-ペンチルオキシスチリル)-4,6-ビス(トリクロロメチル)-s-トリアジン、4-[p-N,N-ジ(エトキシカルボニルメチル)]-2,6-ジ(トリクロロメチル)-s-トリアジン、1,3-ビス(トリクロロメチル)-5-(2’-クロロフェニル)-s-トリアジン、1,3-ビス(トリクロロメチル)-5-(4’-メトキシフェニル)-s-トリアジン、2-(p-ジメチルアミノスチリル)ベンズオキサゾール、2-(p-ジメチルアミノスチリル)ベンズチアゾール、2-メルカプトベンゾチアゾール、3,3’-カルボニルビス(7-ジエチルアミノクマリン)、2-(o-クロロフェニル)-4,4’,5,5’-テトラフェニル-1,2’-ビイミダゾール、2,2’-ビス(2-クロロフェニル)-4,4’,5,5’-テトラキス(4-エトキシカルボニルフェニル)-1,2’-ビイミダゾール、2,2’-ビス(2,4-ジクロロフェニル)-4,4’,5,5’-テトラフェニル-1,2’-ビイミダゾール、2,2’ビス(2,4-ジブロモフェニル)-4,4’,5,5’-テトラフェニル-1,2’-ビイミダゾール、2,2’-ビス(2,4,6-トリクロロフェニル)-4,4’,5,5’-テトラフェニル-1,2’-ビイミダゾール、3-(2-メチル-2-ジメチルアミノプロピオニル)カルバゾール、3,6-ビス(2-メチル-2-モルホリノプロピオニル)-9-n-ドデシルカルバゾール、1-ヒドロキシシクロヘキシルフェニルケトン、ビス(5-2,4-シクロペンタジエン-1-イル)-ビス(2,6-ジフルオロ-3-(1H-ピロール-1-イル)-フェニル)チタニウム、3,3’,4,4’-テトラ(t-ブチルペルオキシカルボニル)ベンゾフェノン、3,3’,4,4’-テトラ(t-ヘキシルペルオキシカルボニル)ベンゾフェノン、3,3’-ジ(メトキシカルボニル)-4,4’-ジ(t-ブチルペルオキシカルボニル)ベンゾフェノン、3,4’-ジ(メトキシカルボニル)-4,3’-ジ(t-ブチルペルオキシカルボニル)ベンゾフェノン、4,4’-ジ(メトキシカルボニル)-3,3’-ジ(t-ブチルペルオキシカルボニル)ベンゾフェノン、2-(3-メチル-3H-ベンゾチアゾール-2-イリデン)-1-ナフタレン-2-イル-エタノン、又は2-(3-メチル-1,3-ベンゾチアゾール-2(3H)-イリデン)-1-(2-ベンゾイル)エタノン等を挙げることができる。これらの化合物は単独で使用してもよく、2つ以上を混合して使用することもできる。 The compound that generates radicals when exposed to light is not particularly limited as long as it is a compound that initiates radical polymerization upon irradiation with light. Such radical photopolymerization initiators include benzophenone, Michler's ketone, 4,4'-bis(diethylamino)benzophenone, xanthone, thioxanthone, isopropylxanthone, 2,4-diethylthioxanthone, 2-ethylanthraquinone, acetophenone, 2-hydroxy -2-Methylpropiophenone, 2-hydroxy-2-methyl-4'-isopropylpropiophenone, 1-hydroxycyclohexylphenyl ketone, isopropylbenzoin ether, isobutylbenzoin ether, 2,2-diethoxyacetophenone, 2,2 -dimethoxy-2-phenylacetophenone, camphorquinone, benzanthrone, 2-methyl-1-[4-(methylthio)phenyl]-2-morpholinopropan-1-one, 2-benzyl-2-dimethylamino-1-( 4-morpholinophenyl)-butanone-1, ethyl 4-dimethylaminobenzoate, isoamyl 4-dimethylaminobenzoate, 4,4'-di(t-butylperoxycarbonyl)benzophenone, 3,4,4'-tri( t-Butylperoxycarbonyl)benzophenone, 2,4,6-trimethylbenzoyldiphenylphosphine oxide, 2-(4'-methoxystyryl)-4,6-bis(trichloromethyl)-s-triazine, 2-(3' , 4'-dimethoxystyryl)-4,6-bis(trichloromethyl)-s-triazine, 2-(2',4'-dimethoxystyryl)-4,6-bis(trichloromethyl)-s-triazine, 2 -(2'-methoxystyryl)-4,6-bis(trichloromethyl)-s-triazine, 2-(4'-pentyloxystyryl)-4,6-bis(trichloromethyl)-s-triazine, 4- [p-N,N-di(ethoxycarbonylmethyl)]-2,6-di(trichloromethyl)-s-triazine, 1,3-bis(trichloromethyl)-5-(2'-chlorophenyl)-s- Triazine, 1,3-bis(trichloromethyl)-5-(4'-methoxyphenyl)-s-triazine, 2-(p-dimethylaminostyryl)benzoxazole, 2-(p-dimethylaminostyryl)benzthiazole, 2-mercaptobenzothiazole, 3,3'-carbonylbis(7-diethylaminocoumarin), 2-(o-chlorophenyl)-4,4',5,5'-tetraphenyl-1,2'-biimidazole, 2 , 2'-bis(2-chlorophenyl)-4,4',5,5'-tetrakis(4-ethoxycarbonylphenyl)-1,2'-biimidazole, 2,2'-bis(2,4-dichlorophenyl) )-4,4',5,5'-tetraphenyl-1,2'-biimidazole, 2,2'bis(2,4-dibromophenyl)-4,4',5,5'-tetraphenyl- 1,2'-biimidazole, 2,2'-bis(2,4,6-trichlorophenyl)-4,4',5,5'-tetraphenyl-1,2'-biimidazole, 3-(2 -Methyl-2-dimethylaminopropionyl)carbazole, 3,6-bis(2-methyl-2-morpholinopropionyl)-9-n-dodecylcarbazole, 1-hydroxycyclohexyl phenylketone, bis(5-2,4-cyclo Pentadien-1-yl)-bis(2,6-difluoro-3-(1H-pyrrol-1-yl)-phenyl)titanium, 3,3',4,4'-tetra(t-butylperoxycarbonyl)benzophenone , 3,3',4,4'-tetra(t-hexylperoxycarbonyl)benzophenone, 3,3'-di(methoxycarbonyl)-4,4'-di(t-butylperoxycarbonyl)benzophenone, 3,4 '-di(methoxycarbonyl)-4,3'-di(t-butylperoxycarbonyl)benzophenone, 4,4'-di(methoxycarbonyl)-3,3'-di(t-butylperoxycarbonyl)benzophenone, 2 -(3-methyl-3H-benzothiazol-2-ylidene)-1-naphthalen-2-yl-ethanone, or 2-(3-methyl-1,3-benzothiazol-2(3H)-ylidene)-1 -(2-benzoyl)ethanone and the like. These compounds may be used alone or in combination of two or more.
なお、前記ラジカル発生膜が、ラジカル重合を誘発する有機基を含有する重合体から成る場合であっても、エネルギーを与えた際にラジカル重合を促進する目的で、上記のラジカルを発生する基を有する化合物を含有させてもよい。 Note that even if the radical-generating film is made of a polymer containing an organic group that induces radical polymerization, the above-mentioned radical-generating group may be added for the purpose of promoting radical polymerization when energy is applied. You may contain a compound having.
ラジカル発生膜形成組成物は、重合体成分、必要に応じてラジカル発生剤その他の含有成分を溶解又は分散する有機溶媒を含有することができる。そのような有機溶媒に特に限定はなく、例えば、上記のポリアミック酸の合成で例示したような有機溶媒を挙げることができる。中でも、N-メチル-2-ピロリドン、γ-ブチロラクトン、N-エチル-2-ピロリドン、1,3-ジメチル-2-イミダゾリジノン、3-メトキシ-N,N-ジメチルプロパンアミド等は、溶解性の観点から好ましい。特に、N-メチル-2-ピロリドン又はN-エチル-2-ピロリドンが好ましいが、2種類以上の混合溶媒を用いてもよい。 The radical-generating film-forming composition can contain an organic solvent for dissolving or dispersing the polymer component and, if necessary, the radical generator and other components. There are no particular limitations on such organic solvents, and examples thereof include organic solvents such as those exemplified in the synthesis of polyamic acid described above. Among them, N-methyl-2-pyrrolidone, γ-butyrolactone, N-ethyl-2-pyrrolidone, 1,3-dimethyl-2-imidazolidinone, 3-methoxy-N,N-dimethylpropanamide, etc. preferred from the viewpoint of In particular, N-methyl-2-pyrrolidone or N-ethyl-2-pyrrolidone is preferred, but a mixed solvent of two or more types may be used.
また、塗膜の均一性や平滑性を向上させる溶媒を、ラジカル発生膜形成組成物の含有成分の溶解性が高い有機溶媒に混合して使用すると好ましい。 Further, it is preferable to use a solvent that improves the uniformity and smoothness of the coating film by mixing it with an organic solvent in which the components contained in the radical-generating film-forming composition have high solubility.
塗膜の均一性や平滑性を向上させる溶媒としては、例えば、イソプロピルアルコール、メトキシメチルペンタノール、メチルセロソルブ、エチルセロソルブ、ブチルセロソルブ、メチルセロソルブアセテート、ブチルセロソルブアセテート、エチルセロソルブアセテート、ブチルカルビトール、エチルカルビトール、エチルカルビトールアセテート、エチレングリコール、エチレングリコールモノアセテート、エチレングリコールモノイソプロピルエーテル、エチレングリコールモノブチルエーテル、プロピレングリコール、プロピレングリコールモノアセテート、プロピレングリコールモノメチルエーテル、プロピレングリコールモノブチルエーテル、プロピレングリコール-tert-ブチルエーテル、ジプロピレングリコールモノメチルエーテル、ジエチレングリコール、ジエチレングリコールモノアセテート、ジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル、ジプロピレングリコールモノアセテートモノメチルエーテル、ジプロピレングリコールモノメチルエーテル、プロピレングリコールモノメチルエーテルアセテート、ジプロピレングリコールモノエチルエーテル、ジプロピレングリコールモノアセテートモノエチルエーテル、ジプロピレングリコールモノプロピルエーテル、ジプロピレングリコールモノアセテートモノプロピルエーテル、3-メチル-3-メトキシブチルアセテート、トリプロピレングリコールメチルエーテル、3-メチル-3-メトキシブタノール、ジイソプロピルエーテル、エチルイソブチルエーテル、ジイソブチレン、アミルアセテート、ブチルブチレート、ブチルエーテル、ジイソブチルケトン、メチルシクロへキセン、プロピルエーテル、ジヘキシルエーテル、n-へキサン、n-ペンタン、n-オクタン、ジエチルエーテル、乳酸メチル、乳酸エチル、酢酸メチル、酢酸エチル、酢酸n-ブチル、酢酸プロピレングリコールモノエチルエーテル、ピルビン酸メチル、ピルビン酸エチル、3-メトキシプロピオン酸メチル、3-エトキシプロピオン酸メチルエチル、3-メトキシプロピオン酸エチル、3-エトキシプロピオン酸、3-メトキシプロピオン酸、3-メトキシプロピオン酸プロピル、3-メトキシプロピオン酸ブチル、1-メトキシ-2-プロパノール、1-エトキシ-2-プロパノール、1-ブトキシ-2-プロパノール、1-フェノキシ-2-プロパノール、プロピレングリコールモノアセテート、プロピレングリコールジアセテート、プロピレングリコール-1-モノメチルエーテル-2-アセテート、プロピレングリコール-1-モノエチルエーテル-2-アセテート、ジプロピレングリコール、2-(2-エトキシプロポキシ)プロパノール、乳酸メチルエステル、乳酸エチルエステル、乳酸n-プロピルエステル、乳酸n-ブチルエステル、乳酸イソアミルエステル、2-エチル-1-ヘキサノールなどが挙げられる。これらの溶媒は複数種類を混合してもよい。これらの溶媒を用いる場合は、液晶配向剤に含まれる溶媒全体の5~80質量%であることが好ましく、より好ましくは20~60質量%である。 Examples of solvents that improve the uniformity and smoothness of the coating include isopropyl alcohol, methoxymethylpentanol, methyl cellosolve, ethyl cellosolve, butyl cellosolve, methyl cellosolve acetate, butyl cellosolve acetate, ethyl cellosolve acetate, butyl carbitol, and ethyl carbitol. Tall, ethyl carbitol acetate, ethylene glycol, ethylene glycol monoacetate, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, propylene glycol, propylene glycol monoacetate, propylene glycol monomethyl ether, propylene glycol monobutyl ether, propylene glycol-tert-butyl ether , dipropylene glycol monomethyl ether, diethylene glycol, diethylene glycol monoacetate, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, dipropylene glycol monoacetate monomethyl ether, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether, dipropylene glycol Monoacetate monoethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monoacetate monopropyl ether, 3-methyl-3-methoxybutyl acetate, tripropylene glycol methyl ether, 3-methyl-3-methoxybutanol, diisopropyl ether, Ethyl isobutyl ether, diisobutylene, amyl acetate, butyl butyrate, butyl ether, diisobutyl ketone, methylcyclohexene, propyl ether, dihexyl ether, n-hexane, n-pentane, n-octane, diethyl ether, methyl lactate, ethyl lactate , methyl acetate, ethyl acetate, n-butyl acetate, propylene glycol monoethyl acetate, methyl pyruvate, ethyl pyruvate, methyl 3-methoxypropionate, methylethyl 3-ethoxypropionate, ethyl 3-methoxypropionate, 3 -Ethoxypropionic acid, 3-methoxypropionic acid, propyl 3-methoxypropionate, butyl 3-methoxypropionate, 1-methoxy-2-propanol, 1-ethoxy-2-propanol, 1-butoxy-2-propanol, 1 -Phenoxy-2-propanol, propylene glycol monoacetate, propylene glycol diacetate, propylene glycol-1-monomethyl ether-2-acetate, propylene glycol-1-monoethyl ether-2-acetate, dipropylene glycol, 2-(2) -ethoxypropoxy)propanol, methyl lactate, ethyl lactate, n-propyl lactate, n-butyl lactate, isoamyl lactate, 2-ethyl-1-hexanol, and the like. A plurality of types of these solvents may be mixed. When using these solvents, it is preferably 5 to 80% by mass, more preferably 20 to 60% by mass of the total solvent contained in the liquid crystal aligning agent.
ラジカル発生膜形成組成物には、上記以外の成分を含有させてもよい。その例としては、ラジカル発生膜形成組成物を塗布した際の膜厚均一性や表面平滑性を向上させる化合物、ラジカル発生膜形成組成物と基板との密着性を向上させる化合物、ラジカル発生膜形成組成物の膜強度をさらに向上させる化合物などが挙げられる。 The radical-generating film-forming composition may contain components other than those mentioned above. Examples include compounds that improve film thickness uniformity and surface smoothness when applying the radical-generating film-forming composition, compounds that improve the adhesion between the radical-generating film-forming composition and the substrate, and compounds that improve the adhesion between the radical-generating film-forming composition and the substrate. Examples include compounds that further improve the film strength of the composition.
膜厚の均一性や表面平滑性を向上させる化合物としては、フッ素系界面活性剤、シリコーン系界面活性剤、ノ二オン系界面活性剤などが挙げられる。より具体的には、例えば、エフトップEF301、EF303、EF352(トーケムプロダクツ社製))、メガファックF171、F173、R-30(大日本インキ社製)、フロラードFC430、FC431(住友スリーエム社製)、アサヒガードAG710、サーフロンS-382、SC101、SC102、SC103、SC104、SC105、SC106(旭硝子社製)などが挙げられる。これらの界面活性剤を使用する場合、その使用割合は、ラジカル発生膜形成組成物に含有される重合体の総量100質量部に対して、好ましくは0.01~2質量部、より好ましくは0.01~1質量部である。 Examples of compounds that improve film thickness uniformity and surface smoothness include fluorosurfactants, silicone surfactants, and nonionic surfactants. More specifically, for example, FTOP EF301, EF303, EF352 (manufactured by Tochem Products), Megafac F171, F173, R-30 (manufactured by Dainippon Ink), Florado FC430, FC431 (manufactured by Sumitomo 3M) ), Asahi Guard AG710, Surflon S-382, SC101, SC102, SC103, SC104, SC105, SC106 (manufactured by Asahi Glass Co., Ltd.). When these surfactants are used, the proportion used is preferably 0.01 to 2 parts by mass, more preferably 0. .01 to 1 part by mass.
ラジカル発生膜形成組成物と基板との密着性を向上させる化合物の具体例としては、官能性シラン含有化合物やエポキシ基含有化合物などが挙げられる。例えば、3-アミノプロピルトリメトキシシラン、3-アミノプロピルトリエトキシシラン、2-アミノプロピルトリメトキシシラン、2-アミノプロピルトリエトキシシラン、N-(2-アミノエチル)-3-アミノプロピルトリメトキシシラン、N-(2-アミノエチル)-3-アミノプロピルメチルジメトキシシラン、3-ウレイドプロピルトリメトキシシラン、3-ウレイドプロピルトリエトキシシラン、N-エトキシカルボニル-3-アミノプロピルトリメトキシシラン、N-エトキシカルボニル-3-アミノプロピルトリエトキシシラン、N-トリエトキシシリルプロピルトリエチレントリアミン、N-トリメトキシシリルプロピルトリエチレントリアミン、10-トリメトキシシリル-1,4,7-トリアザデカン、10-トリエトキシシリル-1,4,7-トリアザデカン、9-トリメトキシシリル-3,6-ジアザノニルアセテート、9-トリエトキシシリル-3,6-ジアザノニルアセテート、N-ベンジル-3-アミノプロピルトリメトキシシラン、N-ベンジル-3-アミノプロピルトリエトキシシラン、N-フェニル-3-アミノプロピルトリメトキシシラン、N-フェニル-3-アミノプロピルトリエトキシシラン、N-ビス(オキシエチレン)-3-アミノプロピルトリメトキシシラン、N-ビス(オキシエチレン)-3-アミノプロピルトリエトキシシラン、エチレングリコールジグリシジルエーテル、ポリエチレングリコールジグリシジルエーテル、プロピレングリコールジグリシジルエーテル、トリプロピレングリコールジグリシジルエーテル、ポリプロピレングリコールジグリシジルエーテル、ネオペンチルグリコールジグリシジルエーテル、1,6-ヘキサンジオールジグリシジルエーテル、グリセリンジグリシジルエーテル、2,2-ジブロモネオペンチルグリコールジグリシジルエーテル、1,3,5,6-テトラグリシジル-2,4-ヘキサンジオール、N,N,N’,N’-テトラグリシジル-m-キシレンジアミン、1,3-ビス(N,N-ジグリシジルアミノメチル)シクロヘキサン、N,N,N’,N’-テトラグリシジル-4、4’-ジアミノジフェニルメタン、3-(N-アリル-N-グリシジル)アミノプロピルトリメトキシシラン、3-(N,N-ジグリシジル)アミノプロピルトリメトキシシランなどが挙げられる。 Specific examples of compounds that improve the adhesion between the radical-generating film-forming composition and the substrate include functional silane-containing compounds and epoxy group-containing compounds. For example, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 2-aminopropyltrimethoxysilane, 2-aminopropyltriethoxysilane, N-(2-aminoethyl)-3-aminopropyltrimethoxysilane , N-(2-aminoethyl)-3-aminopropylmethyldimethoxysilane, 3-ureidopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, N-ethoxycarbonyl-3-aminopropyltrimethoxysilane, N-ethoxy Carbonyl-3-aminopropyltriethoxysilane, N-triethoxysilylpropyltriethylenetriamine, N-trimethoxysilylpropyltriethylenetriamine, 10-trimethoxysilyl-1,4,7-triazadecane, 10-triethoxysilyl- 1,4,7-triazadecane, 9-trimethoxysilyl-3,6-diazanonyl acetate, 9-triethoxysilyl-3,6-diazanonyl acetate, N-benzyl-3-aminopropyltrimethoxysilane, N-benzyl-3-aminopropyltriethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, N-phenyl-3-aminopropyltriethoxysilane, N-bis(oxyethylene)-3-aminopropyltrimethoxy Silane, N-bis(oxyethylene)-3-aminopropyltriethoxysilane, ethylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, tripropylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, neo Pentyl glycol diglycidyl ether, 1,6-hexanediol diglycidyl ether, glycerin diglycidyl ether, 2,2-dibromoneopentyl glycol diglycidyl ether, 1,3,5,6-tetraglycidyl-2,4-hexanediol , N,N,N',N'-tetraglycidyl-m-xylene diamine, 1,3-bis(N,N-diglycidylaminomethyl)cyclohexane, N,N,N',N'-tetraglycidyl-4 , 4'-diaminodiphenylmethane, 3-(N-allyl-N-glycidyl)aminopropyltrimethoxysilane, 3-(N,N-diglycidyl)aminopropyltrimethoxysilane, and the like.
また、ラジカル発生膜の膜強度をさらに上げるためには、2,2’-ビス(4-ヒドロキシ-3,5-ジヒドロキシメチルフェニル)プロパン、テトラ(メトキシメチル)ビスフェノール等のフェノール化合物を添加してもよい。これらの化合物を使用する場合は、ラジカル発生膜形成組成物に含有される重合体の総量100質量部に対して0.1~30質量部であることが好ましく、より好ましくは1~20質量部である。 In addition, in order to further increase the film strength of the radical generating film, phenolic compounds such as 2,2'-bis(4-hydroxy-3,5-dihydroxymethylphenyl)propane and tetra(methoxymethyl)bisphenol are added. Good too. When these compounds are used, they are preferably used in an amount of 0.1 to 30 parts by weight, more preferably 1 to 20 parts by weight, based on 100 parts by weight of the total amount of polymers contained in the radical-generating film-forming composition. It is.
さらに、ラジカル発生膜形成組成物には、上記の他、本発明の効果が損なわれない範囲であれば、ラジカル発生膜の誘電率や導電性などの電気特性を変化させる目的の誘電体や導電物質を添加してもよい。 Furthermore, in addition to the above, the radical-generating film-forming composition may include dielectrics and conductive materials for the purpose of changing the electrical properties such as permittivity and conductivity of the radical-generating film, as long as the effects of the present invention are not impaired. Substances may also be added.
[ラジカル発生膜]
本発明のラジカル発生膜は、上記ラジカル発生膜形成組成物を用いて得られる。例えば、本発明に用いるラジカル発生膜形成組成物を、基板に塗布した後、乾燥・焼成を行うことで得られる硬化膜を、そのままラジカル発生膜として用いることもできる。また、この硬化膜をラビングしたり、偏光又は特定の波長の光等を照射したり、イオンビーム等の処理をしたり、PSA用配向膜として液晶充填後の液晶表示素子にUVを照射することも可能である。
[Radical generation film]
The radical-generating film of the present invention is obtained using the above-mentioned radical-generating film-forming composition. For example, a cured film obtained by applying the radical-generating film-forming composition used in the present invention to a substrate, followed by drying and baking, can also be used as it is as the radical-generating film. In addition, this cured film may be rubbed, irradiated with polarized light or light of a specific wavelength, treated with an ion beam, etc., or irradiated with UV to the liquid crystal display element after liquid crystal filling as an alignment film for PSA. is also possible.
ラジカル発生膜形成組成物を塗布する基板としては、透明性の高い基板であれば特に限定されないが、基板上に液晶を駆動するための透明電極が形成された基板が好ましい。
具体例を挙げると、ガラス板、ポリカーボネート、ポリ(メタ)アクリレート、ポリエーテルサルホン、ポリアリレート、ポリウレタン、ポリサルホン、ポリエーテル、ポリエーテルケトン、トリメチルペンテン、ポリオレフィン、ポリエチレンテレフタレート、(メタ)アクリロニトリル、トリアセチルセルロース、ジアセチルセルロース、アセテートブチレートセルロースなどのプラスチック板などに透明電極が形成された基板を挙げることができる。
The substrate on which the radical-generating film-forming composition is applied is not particularly limited as long as it is a highly transparent substrate, but a substrate on which a transparent electrode for driving a liquid crystal is formed is preferable.
Specific examples include glass plates, polycarbonates, poly(meth)acrylates, polyethersulfones, polyarylates, polyurethanes, polysulfones, polyethers, polyetherketones, trimethylpentene, polyolefins, polyethylene terephthalate, (meth)acrylonitrile, and Examples include substrates in which transparent electrodes are formed on plastic plates such as cellulose acetate, cellulose diacetate, and cellulose acetate butyrate.
IPS方式の液晶表示素子に使用できる基板には、標準的なIPS櫛歯電極やPSAフィッシュボーン電極といった電極パターンやMVAのような突起パターンでも使用できる。
また、TFT型の素子のような高機能素子においては、液晶駆動のための電極と基板の間にトランジスタの如き素子が形成されたものが用いられる。
透過型の液晶表示素子を意図している場合は、上記の如き基板を用いることが一般的であるが、反射型の液晶表示素子を意図している場合では、片側の基板のみにならばシリコンウエハー等の不透明な基板も用いることが可能である。その際、基板に形成された電極には、光を反射するアルミニウムの如き材料を用いることもできる。
Substrates that can be used in IPS type liquid crystal display elements include standard electrode patterns such as IPS comb-shaped electrodes and PSA fishbone electrodes, and protrusion patterns such as MVA.
Furthermore, in a high-performance element such as a TFT type element, an element such as a transistor is formed between an electrode for driving a liquid crystal and a substrate.
When a transmissive type liquid crystal display element is intended, it is common to use a substrate like the one described above, but when a reflective type liquid crystal display element is intended, silicon is used for only one side of the substrate. Opaque substrates such as wafers can also be used. In this case, a material such as aluminum that reflects light can also be used for the electrodes formed on the substrate.
ラジカル発生膜形成組成物の塗布方法としては、スピンコート法、印刷法、インクジェット法、スプレー法、ロールコート法などが挙げられるが、生産性の面から工業的には転写印刷法が広く用いられており、本発明でも好適に用いられる。 Methods for applying the radical-generating film-forming composition include spin coating, printing, inkjet, spraying, and roll coating, but transfer printing is widely used industrially from the viewpoint of productivity. Therefore, it is suitably used in the present invention.
ラジカル発生膜形成組成物を塗布した後の乾燥の工程は、必ずしも必要とされないが、塗布後から焼成までの時間が基板ごとに一定していない場合、又は塗布後ただちに焼成されない場合には、乾燥工程を含める方が好ましい。この乾燥は、基板の搬送等により塗膜形状が変形しない程度に溶媒が除去されていればよく、その乾燥手段については特に限定されない。例えば、温度40℃~150℃、好ましくは60℃~100℃のホットプレート上で、0.5~30分、好ましくは1~5分乾燥させる方法が挙げられる。 The drying step after applying the radical-generating film-forming composition is not necessarily required, but if the time from application to baking is not constant for each substrate, or if baking is not performed immediately after application, drying may be necessary. It is preferable to include a process. This drying may be performed as long as the solvent is removed to such an extent that the shape of the coating film is not deformed due to transportation of the substrate, etc., and the drying means is not particularly limited. For example, a method of drying on a hot plate at a temperature of 40° C. to 150° C., preferably 60° C. to 100° C. for 0.5 to 30 minutes, preferably 1 to 5 minutes can be mentioned.
上記の方法でラジカル発生膜形成組成物を塗布して形成される塗膜は、焼成して硬化膜とすることができる。その際、焼成温度は、通常100℃~350℃の任意の温度で行うことができるが、好ましくは140℃~300℃であり、より好ましくは150℃~230℃、更に好ましくは160℃~220℃である。焼成時間は通常5分~240分の任意の時間で焼成を行うことができる。好ましくは10~90分であり、より好ましくは20~90分である。加熱は、通常公知の方法、例えば、ホットプレート、熱風循環オーブン、IRオーブン、ベルト炉などを用いることができる。 The coating film formed by applying the radical-generating film-forming composition by the above method can be baked to form a cured film. At that time, the firing temperature can be generally any temperature from 100°C to 350°C, preferably from 140°C to 300°C, more preferably from 150°C to 230°C, even more preferably from 160°C to 220°C. It is ℃. Firing can be carried out for any desired time, usually from 5 minutes to 240 minutes. Preferably it is 10 to 90 minutes, more preferably 20 to 90 minutes. Heating can be performed using a commonly known method such as a hot plate, hot air circulation oven, IR oven, belt furnace, etc.
この硬化膜の厚みは必要に応じて選択することができるが、好ましくは5nm以上、より好ましくは10nm以上の場合、液晶表示素子の信頼性が得られ易いので好適である。また、硬化膜の厚みが好ましくは300nm以下、より好ましくは150nm以下の場合は、液晶表示素子の消費電力が極端に大きくならないので好適である。 The thickness of this cured film can be selected as required, but it is preferably 5 nm or more, more preferably 10 nm or more, since reliability of the liquid crystal display element can be easily obtained. Further, it is preferable that the thickness of the cured film is preferably 300 nm or less, more preferably 150 nm or less, since the power consumption of the liquid crystal display element does not become extremely large.
以上のようにしてラジカル発生膜を有する第一基板を得ることができるが、当該ラジカル発生膜に一軸配向処理を施すことができる。一軸配向処理を行う方法としては、光配向法、斜方蒸着法、ラビング、磁場による一軸配向処理等が挙げられる。 Although the first substrate having the radical-generating film can be obtained as described above, the radical-generating film can be subjected to a uniaxial alignment treatment. Examples of methods for performing the uniaxial alignment treatment include a photoalignment method, an oblique evaporation method, rubbing, and a uniaxial alignment treatment using a magnetic field.
一方向にラビング処理することによる配向処理を行う場合には、例えば、ラビング布が巻きつけられたラビングローラーを回転させながら、ラビング布と膜とが接触するように基板を移動させる。櫛歯電極が形成されている本発明の第一基板の場合、液晶の電気的物性によって方向が選択されるが、正の誘電異方性を有する液晶を用いる場合においてはラビング方向は櫛歯電極の延びている方向とほぼ同一の方向とすることが好ましい。 When performing orientation treatment by rubbing in one direction, for example, while rotating a rubbing roller around which a rubbing cloth is wound, the substrate is moved so that the rubbing cloth and the film come into contact with each other. In the case of the first substrate of the present invention on which comb-teeth electrodes are formed, the rubbing direction is selected depending on the electrical properties of the liquid crystal, but when using a liquid crystal with positive dielectric anisotropy, the rubbing direction is determined by the comb-teeth electrodes. It is preferable that the direction is substantially the same as the extending direction of.
本発明の第二基板は、ラジカル発生膜を有さないほかは、上記第一基板と同様である。従来から知られている液晶配向膜を有する基板とすることが好ましい。 The second substrate of the present invention is the same as the first substrate except that it does not have a radical generating film. It is preferable to use a substrate having a conventionally known liquid crystal alignment film.
<液晶セル>
本発明の液晶セルは、上記の方法により、基板にラジカル発生膜を形成した後、当該ラジカル発生膜を有する基板(第一基板)と、公知の液晶配向膜を有する基板(第二基板)とを、ラジカル発生膜と液晶配向膜とが向かい合うように配置し、スペーサーを挟んで、シール剤で固定し、液晶及びラジカル重合性化合物を含有する液晶組成物を注入して封止することにより得られる。その際、用いるスペーサーの大きさは通常1~30μmであるが、好ましくは2~10μmである。また、第一基板のラビング方向と、第二基板のラビング方向とを平行にすることにより、IPSモードやFFSモードに使用することができ、ラビング方向が直交するように配置すれば、ツイストネマチックモードに使用することができる。
液晶及びラジカル重合性化合物を含有する液晶組成物を注入する方法は特に制限されず、作製した液晶セル内を減圧にした後、液晶と重合性化合物を含む混合物を注入する真空法、液晶と重合性化合物とを含む混合物を滴下した後に封止を行う滴下法などを挙げることができる。
<Liquid crystal cell>
In the liquid crystal cell of the present invention, after forming a radical generating film on a substrate by the above method, a substrate having the radical generating film (first substrate) and a substrate having a known liquid crystal alignment film (second substrate) are combined. is obtained by arranging the radical generating film and the liquid crystal alignment film so as to face each other, sandwiching a spacer, fixing with a sealant, and sealing by injecting a liquid crystal composition containing a liquid crystal and a radically polymerizable compound. It will be done. At this time, the size of the spacer used is usually 1 to 30 μm, preferably 2 to 10 μm. Also, by making the rubbing direction of the first substrate parallel to the rubbing direction of the second substrate, it can be used in IPS mode and FFS mode, and if the rubbing directions are arranged perpendicularly, twisted nematic mode can be used. It can be used for.
The method of injecting a liquid crystal composition containing a liquid crystal and a radically polymerizable compound is not particularly limited, and may include a vacuum method in which a mixture containing a liquid crystal and a polymerizable compound is injected after reducing the pressure in the prepared liquid crystal cell, and a method of injecting a mixture containing a liquid crystal and a polymerizable compound. Examples include a dropping method in which sealing is performed after dropping a mixture containing a sexual compound.
<液晶及びラジカル重合性化合物を含有する液晶組成物>
本発明の液晶表示素子の作成において、液晶とともに用いる重合性化合物は、下記式(1)で表される化合物である。
式(1)中、RaおよびRbはそれぞれ独立に炭素数2~8の直鎖アルキル基を表し、Eは単結合、-O-、-NRc-、-S-、エステル結合、アミド結合から選ばれる結合基を表し、Rcは水素原子、炭素数1~4のアルキル基を示す。
<Liquid crystal composition containing liquid crystal and radically polymerizable compound>
In producing the liquid crystal display element of the present invention, the polymerizable compound used together with the liquid crystal is a compound represented by the following formula (1).
In formula (1), R a and R b each independently represent a straight chain alkyl group having 2 to 8 carbon atoms, and E is a single bond, -O-, -NR c -, -S-, an ester bond, an amide It represents a bonding group selected from bonds, and R c represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.
前記ラジカル重合性化合物のうち少なくとも一種は、液晶と相溶性を有する、一分子中に一個の重合性不飽和結合を有する化合物、すなわち、単官能のラジカル重合性基を有する化合物であることが好ましい。 At least one of the radically polymerizable compounds is preferably a compound having one polymerizable unsaturated bond in one molecule, which is compatible with liquid crystals, that is, a compound having a monofunctional radically polymerizable group. .
そして、前記式(1)で表されるラジカル重合性化合物としては式中Eがエステル結合(-C(=O)-O-または-O-C(=O)-であらわされる結合)のものが合成のしやすさや液晶への相溶性、重合反応性の観点で好ましく、具体的には以下のような構造を有する化合物が好ましいが、特に限定はしない。
式(1-1)及び(1-2)中、RaおよびRbはそれぞれ独立に炭素数2~8の直鎖アルキル基を表す。
The radically polymerizable compound represented by the above formula (1) is one in which E is an ester bond (a bond represented by -C(=O)-O- or -O-C(=O)-). is preferable from the viewpoint of ease of synthesis, compatibility with liquid crystals, and polymerization reactivity, and specifically, compounds having the following structures are preferable, but are not particularly limited.
In formulas (1-1) and (1-2), Ra and Rb each independently represent a straight-chain alkyl group having 2 to 8 carbon atoms.
また、前記液晶及びラジカル重合性化合物を含有する液晶組成物において、前記ラジカル重合性化合物を重合させて得られるポリマーのTgが100℃以下のものになるラジカル重合性化合物を含有することが好ましい。 In addition, in the liquid crystal composition containing the liquid crystal and a radically polymerizable compound, it is preferable to contain a radically polymerizable compound whose Tg of the polymer obtained by polymerizing the radically polymerizable compound is 100 ° C. or less.
これらの各種ラジカル重合性モノマーは、単独で使用しても、2種以上を併用してもよい。また、これらは、液晶と相溶性を有することが好ましい。 These various radically polymerizable monomers may be used alone or in combination of two or more. Moreover, it is preferable that these have compatibility with liquid crystal.
液晶組成物中のラジカル重合性化合物の含有量は、液晶とラジカル重合性化合物との合計質量に対して、好ましくは3質量%以上、より好ましくは5質量%以上であり、好ましくは50質量%以下、より好ましくは20質量%以下である。 The content of the radically polymerizable compound in the liquid crystal composition is preferably 3% by mass or more, more preferably 5% by mass or more, and preferably 50% by mass, based on the total mass of the liquid crystal and the radically polymerizable compound. The content is more preferably 20% by mass or less.
前記ラジカル重合性化合物を重合させて得られるポリマーは、そのTgを100℃以下とすることが好ましい。 The polymer obtained by polymerizing the radically polymerizable compound preferably has a Tg of 100°C or less.
なお、液晶とは一般に固体と液体の両方の性質を示す状態にある物質をいい、代表的な液晶相としてネマティック液晶とスメクティック液晶があるが、本発明において使用できる液晶は特に限定されない。一例を挙げれば4-ペンチル-4’-シアノビフェニルである。 Note that liquid crystal generally refers to a substance that exhibits both solid and liquid properties, and representative liquid crystal phases include nematic liquid crystal and smectic liquid crystal, but the liquid crystal that can be used in the present invention is not particularly limited. One example is 4-pentyl-4'-cyanobiphenyl.
次に、この液晶とラジカル重合性化合物とを含む混合物(液晶組成物)が導入された液晶セルに当該ラジカル重合性化合物を重合反応させるのに十分なエネルギーを与える。これは、例えば、熱を加えるか、UV照射することにより実施することができ、当該ラジカル重合性化合物がその場で重合されることで、所望の特性が発現する。中でもUVの使用は配向性のパターニングが可能となり、更に短時間で重合反応させられる点で、UV照射が好ましい。なお、ツイストネマチックモードに使用する際は、上記液晶組成物に加えて、必要に応じてカイラルドーパントを液晶セルに導入すればよい。 Next, sufficient energy is applied to the liquid crystal cell into which the mixture (liquid crystal composition) containing this liquid crystal and a radically polymerizable compound has been introduced to cause the radically polymerizable compound to undergo a polymerization reaction. This can be carried out, for example, by applying heat or UV irradiation, and the radically polymerizable compound is polymerized on the spot, thereby developing the desired properties. Among these, UV irradiation is preferable because it enables oriented patterning and allows polymerization reaction to occur in a short time. When used in the twisted nematic mode, in addition to the above liquid crystal composition, a chiral dopant may be introduced into the liquid crystal cell as necessary.
またUV照射の際、加熱を行ってもよい。UV照射を行う際の加熱温度は、導入された液晶が液晶性を発現する温度範囲が好ましく、通常40℃以上であり、液晶の等方相に変わる温度未満での加熱が好ましい。 Further, heating may be performed during UV irradiation. The heating temperature during UV irradiation is preferably within a temperature range at which the introduced liquid crystal exhibits liquid crystallinity, usually 40° C. or higher, and preferably below the temperature at which the liquid crystal changes to an isotropic phase.
ここで、UV照射する場合におけるUV照射波長は、反応する重合性化合物の反応量子収率の最も良い波長を選択することが好ましく、UVの照射量は、通常0.01~30Jであるが、好ましくは、10J以下であり、UV照射量が少ないほうが、液晶ディスプレイを構成する部材の破壊からなる信頼性低下を抑制でき、かつUV照射時間を減らせることで製造上のタクトが向上するので好適である。 Here, in the case of UV irradiation, it is preferable to select the wavelength of UV irradiation that gives the best reaction quantum yield of the polymerizable compound to be reacted, and the amount of UV irradiation is usually 0.01 to 30 J. Preferably, the amount is 10 J or less, and a smaller amount of UV irradiation is preferable because it is possible to suppress a decrease in reliability due to destruction of the components constituting the liquid crystal display, and to improve the manufacturing takt time by reducing the UV irradiation time. It is.
また、UV照射ではなく、加熱のみで重合させる場合の加熱は、重合性化合物の反応する温度であって、液晶の分解温度未満となる温度範囲で行うことが好ましい。具体的には、例えば、100℃以上150℃以下である。 Further, when polymerizing by heating alone instead of UV irradiation, heating is preferably carried out at a temperature at which the polymerizable compound reacts and which is lower than the decomposition temperature of the liquid crystal. Specifically, the temperature is, for example, 100°C or more and 150°C or less.
ラジカル重合性化合物を重合反応させるのに十分なエネルギーを与えるとき、電圧を印加しない、無電界状態であることが好ましい。 When applying sufficient energy to cause the radically polymerizable compound to undergo a polymerization reaction, it is preferable that no voltage is applied and that no electric field is applied.
<液晶表示素子>
このようにして得られた液晶セルを用いて液晶表示素子を作製することができる。
例えば、この液晶セルに必要に応じて反射電極、透明電極、λ/4板、偏光膜、カラーフィルター層等を常法に従って設けることにより反射型液晶表示素子とすることができる。
また、この液晶セルに必要に応じてバックライト、偏光板、λ/4板、透明電極、偏光膜、カラーフィルター層等を常法に従って設けることにより透過型液晶表示素子とすることができる。
<Liquid crystal display element>
A liquid crystal display element can be manufactured using the liquid crystal cell obtained in this manner.
For example, a reflective liquid crystal display element can be obtained by providing a reflective electrode, a transparent electrode, a λ/4 plate, a polarizing film, a color filter layer, etc. in accordance with a conventional method to this liquid crystal cell as necessary.
Further, by providing this liquid crystal cell with a backlight, a polarizing plate, a λ/4 plate, a transparent electrode, a polarizing film, a color filter layer, etc. according to a conventional method as required, a transmissive liquid crystal display element can be obtained.
本発明を実施例により具体的に説明するが、本発明はこれらの実施例に限定されない。ポリマーの重合および膜形成組成物の調製で使用した化合物の略号、及び特性評価の方法は以下のとおりである。 EXAMPLES The present invention will be specifically explained with reference to Examples, but the present invention is not limited to these Examples. The abbreviations of the compounds used in the polymerization of the polymer and the preparation of the film-forming composition and the methods of characterizing them are as follows.
NMP:N-メチル-2-ピロリドン、
GBL:γ―ブチロラクトン、
BCS:ブチルセロソルブ
NMP: N-methyl-2-pyrrolidone,
GBL: γ- butyrolactone ,
BCS: Butyl cellosolve
<粘度測定>
ポリアミド酸溶液について、E型粘度計TVE-22H(東機産業社製)を用い、サンプル量1.1mL、コーンロータTE-1(1°34’、R24)にて25℃の粘度を測定した。
<Viscosity measurement>
The viscosity of the polyamic acid solution at 25°C was measured using an E-type viscometer TVE-22H (manufactured by Toki Sangyo Co., Ltd.) with a sample volume of 1.1 mL and a cone rotor TE-1 (1° 34', R24). .
<イミド化率の測定>
ポリイミド粉末20mgをNMRサンプル管(草野科学社製 NMRサンプリングチューブスタンダード φ5)に入れ、重水素化ジメチルスルホキシド(DMSO-d6、0.05質量%TMS(テトラメチルシラン)混合品)0.53mlを添加し、超音波をかけて完全に溶解させた。この溶液の500MHzのプロトンNMRを、測定装置(日本電子データム社製、JNW-ECA500)にて測定した。
イミド化率は、イミド化前後で変化しない構造に由来するプロトンを基準プロトンとして決め、このプロトンのピーク積算値と、9.5~10.0ppm付近に現れるアミド基のNHに由来するプロトンピーク積算値とを用い以下の式によって求めた。
イミド化率(%)=(1-α・x/y)×100
式中、xはアミド基のNH由来のプロトンピーク積算値、yは基準プロトンのピーク積算値、αはポリアミド酸(イミド化率が0%)の場合におけるアミド基のNHプロトン1個に対する基準プロトンの個数割合である。
<Measurement of imidization rate>
Put 20 mg of polyimide powder into an NMR sample tube (Kusano Scientific Co., Ltd. NMR sampling tube standard φ5), and add 0.53 ml of deuterated dimethyl sulfoxide (DMSO-d6, 0.05 mass% TMS (tetramethylsilane) mixture). Then, it was completely dissolved by applying ultrasound. Proton NMR of this solution at 500 MHz was measured using a measuring device (manufactured by JEOL Datum Co., Ltd., JNW-ECA500).
The imidization rate is determined by determining a proton derived from a structure that does not change before and after imidization as a reference proton, and calculating the peak integrated value of this proton and the proton peak derived from the NH of the amide group that appears around 9.5 to 10.0 ppm. The value was calculated using the following formula.
Imidization rate (%) = (1-α・x/y)×100
In the formula, x is the integrated value of the NH-derived proton peak of the amide group, y is the integrated peak value of the reference proton, and α is the reference proton for one NH proton of the amide group in the case of polyamic acid (imidization rate is 0%). This is the number ratio of
<ポリマーの重合およびラジカル発生膜形成組成物の調製>
合成例1
TC-1、TC-2(50)/DA-1(50)、DA-2(50) ポリイミドの重合
窒素導入管、空冷管、メカニカルスターラーを備えた100mlの4口フラスコに、DA-1を1.62g(15.00mmol)、DA-2を3.96g(15.00mmol)測り取り、NMP48.2gを加え、窒素雰囲気下で撹拌し、完全に溶解させた。溶解を確認した後、TC-2を3.75g(15.00mmol)加え、窒素雰囲気下60℃で3時間反応させ。再び室温に戻し、TC-1を2.71g(13.80mmol)を加え、窒素雰囲気下40℃で12時間反応させた。重合粘度を確認し、重合粘度が1000mPa・sになるように更にTC-1を添加し、ポリアミック酸濃度が20質量%の重合液を得た。
マグネティックスターラーを備えた200mlの三角フラスコに、上記で得られたポリアミック酸溶液60gを測り取り、NMPを111.4g加え、7質量%の溶液を調製し、撹拌しながら無水酢酸を9.10g(88.52mmol)、ピリジンを3.76g(47.53mmol)加え、室温で30分撹拌後、55℃で3時間撹拌し反応させた。反応終了後、溶液を室温に戻し、500mlのメタノール中に撹拌しながらこの反応溶液を注ぎ、固体を析出させた。固体をろ過により回収し、更に300mlのメタノール中に固体を投入し30分間撹拌洗浄を計2回行い、固体をろ過により回収し、風乾を行った後、真空オーブン60℃にて乾燥を行うことで数平均分子量は11300、重量平均分子量は32900、イミド化率が53%のポリイミド(PI-1)を得た。
<Polymerization of polymer and preparation of radical-generating film-forming composition>
Synthesis example 1
TC-1, TC-2 (50) / DA-1 (50), DA-2 (50) Polymerization of polyimide DA-1 was added to a 100 ml four-necked flask equipped with a nitrogen introduction tube, an air cooling tube, and a mechanical stirrer. 1.62 g (15.00 mmol) and 3.96 g (15.00 mmol) of DA-2 were weighed out, 48.2 g of NMP was added thereto, and the mixture was stirred under a nitrogen atmosphere to completely dissolve. After confirming dissolution, 3.75 g (15.00 mmol) of TC-2 was added and reacted at 60° C. for 3 hours under a nitrogen atmosphere. The temperature was returned to room temperature again, 2.71 g (13.80 mmol) of TC-1 was added, and the mixture was reacted at 40° C. for 12 hours under a nitrogen atmosphere. The polymerization viscosity was confirmed, and TC-1 was further added so that the polymerization viscosity was 1000 mPa·s to obtain a polymerization solution having a polyamic acid concentration of 20% by mass.
Weigh out 60 g of the polyamic acid solution obtained above into a 200 ml Erlenmeyer flask equipped with a magnetic stirrer, add 111.4 g of NMP to prepare a 7% by mass solution, and add 9.10 g of acetic anhydride ( 88.52 mmol) and 3.76 g (47.53 mmol) of pyridine were added, and the mixture was stirred at room temperature for 30 minutes and then stirred at 55° C. for 3 hours to react. After the reaction was completed, the solution was returned to room temperature, and the reaction solution was poured into 500 ml of methanol with stirring to precipitate a solid. Collect the solid by filtration, then add the solid to 300 ml of methanol and wash with stirring for 30 minutes twice in total. Collect the solid by filtration, air dry, and then dry in a vacuum oven at 60°C. As a result, a polyimide (PI-1) having a number average molecular weight of 11,300, a weight average molecular weight of 32,900, and an imidization rate of 53% was obtained.
ラジカル発生膜形成組成物:AL1の調製
マグネティックスターラーを備えた50ml三角フラスコに、合成例1で得られたポリイミド粉末(PI-1)を2.0g測り取り、NMPを18.0g加え、50℃で撹拌し、完全に溶解させた。更にNMPを6.7g、BCSを6.7g加え、更に3時間撹拌することで本発明に係るラジカル発生膜形成組成物:AL1(固形分:6.0質量%、NMP:66質量%、BCS:30質量%)を得た。
Preparation of radical-generating film-forming composition: AL1 Weighed 2.0 g of the polyimide powder (PI-1) obtained in Synthesis Example 1 into a 50 ml Erlenmeyer flask equipped with a magnetic stirrer, added 18.0 g of NMP, and heated at 50°C. Stir to completely dissolve. Further, 6.7 g of NMP and 6.7 g of BCS were added, and the mixture was further stirred for 3 hours to form a radical-generating film-forming composition according to the present invention: AL1 (solid content: 6.0% by mass, NMP: 66% by mass, BCS :30% by mass).
重合性化合物合成例1
2-(ヘプタノイルオキシメチル)アクリル酸エチルエステルの合成
第1工程:2-ヒドロキシメチルアクリル酸エチルエステルの合成
窒素導入管を取り付けた500mlの四口フラスコに、4-メトキシフェノール10mg、DABCO(1,4-ジアザビシクロ[2.2.2]オクタン)21.88g(195.1mmol)を量り取り、純水を50ml加え、窒素雰囲気下で10℃以下で攪拌しながらパラホルムアルデヒド11.52g(390.1mmol)を加え、1時間攪拌した。スラリー状態から溶液状態に変化したのを確認し、アセトニトリルを300ml加え、アクリル酸エチル19.53g(195.1mmol)を滴下しながら加え、50℃で5時間反応させた。反応終了後、分液ロートに反応溶液を移し、n-ヘキサン50mlを加えた。3層に分かれたのを確認し、下の2層を回収し、この操作を3回行った。更にpHが4~5になるように塩酸を加え、酢酸エチルを用いて抽出を行った。抽出した溶液に無水硫酸マグネシウムを加え攪拌し乾燥させた後、濾過・濃縮を行い、無色透明のオイル状液体22.9g(175.6mmol、収率90%)を得た。構造は核磁気共鳴スペクトル(1H-NMRスペクトル)にて目的物であることを確認した。測定データを以下に示す。
1H NMR (400 MHz,CDCl3)δ:6.81(1H)、5.80(1H)、4.31(2H)、4.17(1H)、1.98(1H)、0.93(3H)
Polymerizable compound synthesis example 1
Synthesis of 2-(heptanoyloxymethyl)acrylic acid ethyl ester
1st step: Synthesis of 2-hydroxymethylacrylic acid ethyl ester In a 500 ml four-necked flask equipped with a nitrogen inlet tube, 10 mg of 4-methoxyphenol and 21 g of DABCO (1,4-diazabicyclo[2.2.2]octane) were added. .88 g (195.1 mmol) was weighed out, 50 ml of pure water was added thereto, 11.52 g (390.1 mmol) of paraformaldehyde was added while stirring at 10° C. or lower under a nitrogen atmosphere, and the mixture was stirred for 1 hour. After confirming that the slurry state had changed to a solution state, 300 ml of acetonitrile was added, 19.53 g (195.1 mmol) of ethyl acrylate was added dropwise, and the mixture was reacted at 50° C. for 5 hours. After the reaction was completed, the reaction solution was transferred to a separating funnel, and 50 ml of n-hexane was added. After confirming that the mixture had separated into three layers, the bottom two layers were collected and this operation was repeated three times. Furthermore, hydrochloric acid was added to adjust the pH to 4 to 5, and extraction was performed using ethyl acetate. Anhydrous magnesium sulfate was added to the extracted solution, and the mixture was stirred and dried, followed by filtration and concentration to obtain 22.9 g (175.6 mmol, yield 90%) of a colorless and transparent oily liquid. The structure was confirmed to be the desired product by nuclear magnetic resonance spectrum ( 1 H-NMR spectrum). The measurement data is shown below.
1H NMR (400 MHz, CDCl3 ) δ: 6.81 (1H), 5.80 (1H), 4.31 (2H), 4.17 (1H), 1.98 (1H), 0.93 (3H)
第2工程:2-(ヘプタノイルオキシメチル)アクリル酸エチルエステルの合成
窒素導入管を取り付けた500mlの4口フラスコに、上記方法にて得られた2-ヒドロキシメチルアクリル酸エチルエステルを19.9g(152.9mmol)測りとり、THF300ml、トリエチルアミン23.2g(229.3mmol)を加え、窒素雰囲気下10℃以下に保ちながらヘプタノイルクロリド25.0g(168.2mmol)を滴下しながら加え、6時間反応させた。反応終了後、析出したトリエチルアミン塩酸塩を濾過にて除去し、反応溶液を濃縮させ、酢酸エチル300mlにて再溶解させ、10%炭酸カリウム水溶液100mlにて3回洗浄し、純水50mlにて3回洗浄し、無水硫酸マグネシウムにて乾燥させた後、濾過・濃縮を行い薄黄色の粘体を得た。更にフラッシュカラムクロマトグラフィー(展開溶媒:酢酸エチル:n-ヘキサン=20:80)にて精製し、溶媒除去・真空乾燥を行うことで無色透明のオイル状液体32.2g(133.0mmol:収率87%)を得た。構造は核磁気共鳴スペクトル(1H-NMRスペクトル)にて目的物であることを確認した。測定データを以下に示す。
1H NMR (400 MHz,CDCl3)δ:6.37(1H)、5.80(1H)、3.80(2H)、4.23-4.21(2H)、2.39-2.37(2H)、1.64-1.58(2H)、1.30-1.27(9H)、0.86(3H)
2nd step: Synthesis of 2-(heptanoyloxymethyl)acrylic acid ethyl ester 19.9 g of 2-hydroxymethylacrylic acid ethyl ester obtained by the above method was placed in a 500 ml four-necked flask equipped with a nitrogen introduction tube. (152.9 mmol) was weighed out, 300 ml of THF and 23.2 g (229.3 mmol) of triethylamine were added, and 25.0 g (168.2 mmol) of heptanoyl chloride was added dropwise while keeping the temperature below 10°C under a nitrogen atmosphere for 6 hours. Made it react. After the reaction, precipitated triethylamine hydrochloride was removed by filtration, the reaction solution was concentrated, redissolved in 300 ml of ethyl acetate, washed 3 times with 100 ml of 10% potassium carbonate aqueous solution, and washed 3 times with 50 ml of pure water. After washing twice and drying over anhydrous magnesium sulfate, the mixture was filtered and concentrated to obtain a pale yellow viscous substance. Further purification was performed by flash column chromatography (developing solvent: ethyl acetate: n-hexane = 20:80), followed by solvent removal and vacuum drying to obtain 32.2 g (133.0 mmol) of a colorless and transparent oily liquid. 87%). The structure was confirmed to be the desired product by nuclear magnetic resonance spectrum ( 1 H-NMR spectrum). The measurement data is shown below.
1 H NMR (400 MHz, CDCl 3 ) δ: 6.37 (1H), 5.80 (1H), 3.80 (2H), 4.23-4.21 (2H), 2.39-2. 37 (2H), 1.64-1.58 (2H), 1.30-1.27 (9H), 0.86 (3H)
重合性化合物合成例2
2-(ヘプタノイルオキシメチル)アクリル酸ブチルエステルの合成
第1工程:2-ヒドロキシメチルアクリル酸ブチルエステルの合成
前記第1工程と同様の操作にて、エチルアクリレートをブチルアクリレートに変更し合成を行い、無色透明のオイル24.3gを得た(26.2g:収率85%)。構造は核磁気共鳴スペクトル(1H-NMRスペクトル)にて目的物であることを確認した。測定データを以下に示す。
1H NMR (400 MHz,CDCl3)δ:6.81(1H)、5.80(1H)、4.31(2H)、4.17(1H)、1.98(1H)、1.67-1.64(2H)、1.42-1.38(2H)、0.93(3H)
Polymerizable compound synthesis example 2
Synthesis of 2-(heptanoyloxymethyl)acrylic acid butyl ester
1st step: Synthesis of butyl 2-hydroxymethylacrylate Ethyl acrylate was changed to butyl acrylate and synthesis was carried out in the same manner as in the above-mentioned 1st step to obtain 24.3 g of a colorless and transparent oil (26. 2g: yield 85%). The structure was confirmed to be the desired product by nuclear magnetic resonance spectrum ( 1 H-NMR spectrum). The measurement data is shown below.
1H NMR (400 MHz, CDCl3 ) δ: 6.81 (1H), 5.80 (1H), 4.31 (2H), 4.17 (1H), 1.98 (1H), 1.67 -1.64 (2H), 1.42-1.38 (2H), 0.93 (3H)
第2工程:2-(ヘプタノイルオキシメチル)アクリル酸ブチルエステルの合成
前記第2工程の2-ヒドロキシメチルアクリル酸エチルエステルを上記方法にて得られた2-ヒドロキシメチルアクリル酸ブチルエステルに変えて、同様の操作にて合成を行い、無色透明のオイル状液体34.2g(126.7:収率82.8%)を得た。構造は核磁気共鳴スペクトル(1H-NMRスペクトル)にて目的物であることを確認した。測定データを以下に示す。
1H NMR (400 MHz,CDCl3)δ:6.36(1H)、5.81(1H)、4.80(2H)、4.19-4.16(2H)、2.35-2.31(2H)、1.64-1.58(4H)、1.40-1.25(8H)、0.96-0.83(6H)
Second step: Synthesis of 2-(heptanoyloxymethyl)butyl acrylate ethyl 2- hydroxymethylacrylate in the second step was replaced with butyl 2- hydroxymethylacrylate obtained by the above method. , Synthesis was carried out in the same manner as above to obtain 34.2 g (126.7 g, yield: 82.8%) of a colorless and transparent oily liquid. The structure was confirmed to be the desired product by nuclear magnetic resonance spectrum ( 1 H-NMR spectrum). The measurement data is shown below.
1 H NMR (400 MHz, CDCl 3 ) δ: 6.36 (1H), 5.81 (1H), 4.80 (2H), 4.19-4.16 (2H), 2.35-2. 31 (2H), 1.64-1.58 (4H), 1.40-1.25 (8H), 0.96-0.83 (6H)
重合性化合物合成例3
イタコン酸ジヘキシルの合成
ディーンスターク管を取り付けた4口フラスコに、イタコン酸23.8g(182.9mmol)、1-ヘキサノール35.5g(347.5mmol)を測りとり、シクロヘキサン500ml、濃硫酸0.9g(9.1mmol)、ジブチルヒドロキシトルエン(BHT)0.04g(1.82mmol)を加え、窒素雰囲気にし、110℃にて24時間脱水縮合反応させた。反応終了後、反応溶液にn-ヘキサンを100ml加え、10%炭酸ナトリウム水溶液100gで3回、純水100mlにて3回洗浄し、無水硫酸マグネシウムで乾燥させた。濾過・濃縮後真空乾燥させることで無色透明のオイル状液体48.6g(162.8mmol:収率89%)を得た。構造は核磁気共鳴スペクトル(1H-NMRスペクトル)にて目的物であることを確認した。測定データを以下に示す。
1H NMR (400 MHz,CDCl3)δ:6.30(1H)、5.65(1H)、4.20―4.00(4H)、3.32(2H)、1.64-1.58(4H)、1.40-1.25(12H)、0.96-0.83(6H)
Polymerizable compound synthesis example 3
Synthesis of dihexyl itaconate
Weigh out 23.8 g (182.9 mmol) of itaconic acid and 35.5 g (347.5 mmol) of 1-hexanol into a 4-necked flask equipped with a Dean-Stark tube, and add 500 ml of cyclohexane and 0.9 g (9.1 mmol) of concentrated sulfuric acid. , 0.04 g (1.82 mmol) of dibutylhydroxytoluene (BHT) was added, a nitrogen atmosphere was created, and a dehydration condensation reaction was carried out at 110° C. for 24 hours. After the reaction was completed, 100 ml of n-hexane was added to the reaction solution, washed three times with 100 g of 10% aqueous sodium carbonate solution and three times with 100 ml of pure water, and dried over anhydrous magnesium sulfate. After filtration and concentration, 48.6 g (162.8 mmol: yield 89%) of a colorless and transparent oily liquid was obtained by vacuum drying. The structure was confirmed to be the desired product by nuclear magnetic resonance spectrum ( 1 H-NMR spectrum). The measurement data is shown below.
1 H NMR (400 MHz, CDCl 3 ) δ: 6.30 (1H), 5.65 (1H), 4.20-4.00 (4H), 3.32 (2H), 1.64-1. 58 (4H), 1.40-1.25 (12H), 0.96-0.83 (6H)
(第一基板)
第一基板(以後IPS基板ともいう)は、30mm×35mmの大きさで、厚さが0.7mmの無アルカリガラス基板である。基板上には電極幅が10μm、電極と電極の間隔が10μmの櫛歯型パターンを備えたITO(Indium-Tin-Oxide)電極が形成され、画素を形成している。各画素のサイズは、縦10mmで横約5mmである。
AL1およびSE-6414は、1.0μmのフィルターで濾過した後、上記IPS基板の電極形成面にスピンコート法にて塗布し、80℃のホットプレート上で1分間乾燥させた後220℃で20分間焼成して、それぞれ膜厚100nmの塗膜とした。
ラビング処理「有り」では、ラビング方向が櫛歯電極と平行になるようにラビングした。ラビングは吉川化工製のレーヨン布:YA-20Rを用い、ロール径120mm、回転数300rpm、移動速度50mm/sec、押し込み量0.4mmの条件にて行った。ただし、SE-6414を塗布した膜のみ上記の回転数を1000rpmにした。ラビング処理後は、純水中にて1分間超音波照射を行い、80℃で10分間乾燥した。
(first board)
The first substrate (hereinafter also referred to as an IPS substrate) is an alkali-free glass substrate measuring 30 mm x 35 mm and having a thickness of 0.7 mm. An ITO (Indium-Tin-Oxide) electrode having a comb-shaped pattern with an electrode width of 10 μm and an electrode-to-electrode spacing of 10 μm is formed on the substrate to form a pixel. The size of each pixel is 10 mm in height and approximately 5 mm in width.
AL1 and SE-6414 were filtered through a 1.0 μm filter, applied to the electrode formation surface of the IPS substrate using a spin coating method, dried on a hot plate at 80°C for 1 minute, and then heated at 220°C for 20 minutes. It was baked for a minute to form a coating film with a thickness of 100 nm.
In the case of “with” rubbing treatment, rubbing was performed so that the rubbing direction was parallel to the comb-teeth electrode. The rubbing was performed using YA-20R rayon cloth manufactured by Yoshikawa Kako Co., Ltd. under the conditions of a roll diameter of 120 mm, rotation speed of 300 rpm, moving speed of 50 mm/sec, and pushing amount of 0.4 mm. However, only the membrane coated with SE-6414 was rotated at 1000 rpm. After the rubbing treatment, ultrasonic irradiation was performed in pure water for 1 minute, followed by drying at 80° C. for 10 minutes.
(第二基板)
第二基板(裏面ITO基板ともいう)は、30mm×35mmの大きさで、厚さが0.7mmの無アルカリガラス基板であり、裏面(セルの外側を向く面)にITO膜が成膜されている。また、表面(セルの内側を向く面)には高さ4μmの柱状のスペーサーが形成されている。
SE-6414は、1.0μmのフィルターで濾過した後、スピンコート法にて塗布し、80℃のホットプレート上で1分間乾燥させた。次いで、20分間焼成し、それぞれ膜厚100nmの塗膜とした後、ラビング処理を行った。ラビング処理は、吉川化工製のレーヨン布:YA-20Rを用い、ロール径120mm、回転数1000rpm、移動速度50mm/sec、押し込み量0.4mmの条件にてラビングを行った。ラビング処理後は、純水中にて1分間超音波照射を行い、80℃で10分間乾燥した。
(Second board)
The second substrate (also referred to as the back ITO substrate) is an alkali-free glass substrate with dimensions of 30 mm x 35 mm and a thickness of 0.7 mm, and an ITO film is formed on the back surface (the surface facing the outside of the cell). ing. Moreover, columnar spacers with a height of 4 μm are formed on the surface (the surface facing inside the cell).
SE-6414 was filtered through a 1.0 μm filter, applied by spin coating, and dried on a hot plate at 80° C. for 1 minute. Next, each coating was baked for 20 minutes to form a coating film with a thickness of 100 nm, and then rubbed. The rubbing treatment was performed using YA-20R rayon cloth manufactured by Yoshikawa Kako under the conditions of a roll diameter of 120 mm, rotation speed of 1000 rpm, movement speed of 50 mm/sec, and pushing amount of 0.4 mm. After the rubbing treatment, ultrasonic irradiation was performed in pure water for 1 minute, followed by drying at 80° C. for 10 minutes.
(液晶セルの作製)
上記液晶配向膜付きの2種類の基板(第一基板及び第二基板)を用い、液晶注入口を残して周囲をシールし、セルギャップが約4μmの空セルを作製した。この際、第一基板がラビング処理していない場合は、第一基板の櫛歯電極の向きと第二基板のラビング方向が平行になるように組み合わせ、第一基板をラビング処理した場合は、第一基板と第二基板のラビング方向が逆平行になるように組み合わせた。
この空セルに、液晶組成物LC-1~LC-4(メルク社製MLC-3019に上記重合性化合物をそれぞれの最適量にて添加したもの)を、室温下で約300Paほどの真空度にて真空注入を行ったものと、1Paほどの真空度で1時間脱気を行った後真空注入したものを作成し、注入口を封止して液晶セルとした。得られた液晶セルは、IPSモード液晶表示素子を構成する。その後、得られた液晶セルを120℃で10分加熱処理を行った。
UV処理ありでは、高圧水銀ランプを用い、波長313nmのバンドパスフィルターを介して露光量が3000mJとなるよう液晶セルに紫外線を照射した。
(Preparation of liquid crystal cell)
Using the two types of substrates (first substrate and second substrate) with the liquid crystal alignment film described above, the periphery was sealed leaving a liquid crystal injection port, and an empty cell with a cell gap of about 4 μm was prepared. At this time, if the first substrate has not been subjected to rubbing treatment, the direction of the comb-teeth electrode of the first substrate and the rubbing direction of the second substrate are parallel to each other. The first substrate and the second substrate were combined so that the rubbing directions were antiparallel.
Liquid crystal compositions LC-1 to LC-4 (merck MLC-3019 with each of the above polymerizable compounds added in the optimum amount) were placed in this empty cell at room temperature under a vacuum of about 300 Pa. A liquid crystal cell was prepared by vacuum injection and another by vacuum injection after degassing at a vacuum level of about 1 Pa for 1 hour, and the injection port was sealed to obtain a liquid crystal cell. The obtained liquid crystal cell constitutes an IPS mode liquid crystal display element. Thereafter, the obtained liquid crystal cell was heat-treated at 120° C. for 10 minutes.
In the case of UV treatment, the liquid crystal cell was irradiated with ultraviolet rays using a high-pressure mercury lamp through a bandpass filter with a wavelength of 313 nm so that the exposure amount was 3000 mJ.
<液晶配向性の評価>
クロスニコルにセットした偏光板を用いて液晶セルの配向性を確認した。欠陥無く配向しているものは○、軽微な配向欠陥のあるものは△、配向していないものは×とした。
<Evaluation of liquid crystal orientation>
The orientation of the liquid crystal cell was confirmed using a polarizing plate set in crossed Nicols. Those that were oriented without defects were rated as ○, those with slight orientation defects were rated as △, and those that were not oriented were rated as ×.
<V-Tカーブの測定と駆動閾値電圧、輝度最大電圧評価>
光軸が合うように白色LEDバックライトと輝度計をセットし、その間に、輝度が最も小さくなるように偏光板を取り付けた液晶セル(液晶表示素子)をセットし、1V間隔で8Vまで電圧を印加し、電圧における輝度を測定することでV-Tカーブの測定を行った。得られたV-Tカーブから駆動閾値電圧と輝度が最大になる電圧の値を見積もった。
<Measurement of VT curve and evaluation of drive threshold voltage and maximum brightness voltage>
Set the white LED backlight and brightness meter so that the optical axes are aligned, set the liquid crystal cell (liquid crystal display element) with a polarizing plate attached so that the brightness is the lowest, and apply a voltage up to 8V at 1V intervals. The VT curve was measured by applying the voltage and measuring the brightness at the voltage. From the obtained VT curve, the drive threshold voltage and the voltage value at which the brightness is maximized were estimated.
なお、液晶組成物LC-1~LC-4は、MLC-3019に、下記の表に記載の重合性化合物を、下記の導入量で添加したものである。
<配向性の結果>
IDBuとIDHexを導入した液晶(LC-1、LC-2)およびC2C6とC4C6を導入した液晶は比較的高い真空度で行った場合においても非常に良好な配向性を示した。 The liquid crystals (LC-1, LC-2) into which IDBu and IDHex were introduced and the liquid crystals into which C2C6 and C4C6 were introduced showed very good alignment even when the process was performed at a relatively high degree of vacuum.
<電気-光学特性の結果>
次に、前記でゼロアンカリング配向した液晶を用いたセルのうち、ラジカル発生膜をラビングしていないものとしたものの駆動閾値電圧、最大輝度、応答速度をまとめたものを以下に示す。
Next, a summary of the driving threshold voltage, maximum brightness, and response speed of the cells using the zero-anchoring aligned liquid crystal described above, in which the radical generating film was not rubbed, is shown below.
本発明の重合性化合物を用いた場合ラビング処理の有無に関わらず駆動電圧の低下が確認され、ラビング処理を行うことで応答速度も向上する傾向が見られた。
よって、本発明の重合性化合物は高真空下でのゼロアンカリング化とラビングによる応答速度向上の効果が同時に得られることが分かった。
When the polymerizable compound of the present invention was used, it was confirmed that the driving voltage decreased regardless of the presence or absence of the rubbing treatment, and there was a tendency for the response speed to improve by performing the rubbing treatment.
Therefore, it was found that the polymerizable compound of the present invention can simultaneously achieve the effects of zero anchoring under high vacuum and improvement of response speed by rubbing.
本発明によれば、ゼロ面アンカリング膜を安価な原料から、工業的に、歩留まりよく作り出すことができる。また、本発明の方法で得られる液晶表示素子は、PSA型液晶ディスプレイやSC-PVA型液晶ディスプレイ等の垂直配向方式の液晶表示素子として有用である。 According to the present invention, a zero-plane anchoring film can be industrially produced with high yield from inexpensive raw materials. Further, the liquid crystal display element obtained by the method of the present invention is useful as a vertical alignment type liquid crystal display element such as a PSA type liquid crystal display or an SC-PVA type liquid crystal display.
Claims (18)
式(1)中、RaおよびRbはそれぞれ独立に炭素数2~8の直鎖アルキル基を表し、Eは単結合、-O-、-NRc-、-S-、エステル結合、アミド結合から選ばれる結合基を表し、Rcは水素原子、炭素数1~4のアルキル基を示す。 A liquid crystal composition containing a liquid crystal and a radically polymerizable compound having a structure represented by the following formula (1) is brought into contact with a radical generating film, and energy sufficient to cause the radically polymerizable compound to undergo a polymerization reaction. A method for producing a zero-plane anchoring film, characterized in that the radical-generating film is a film on which an organic group that induces radical polymerization is immobilized.
In formula (1), R a and R b each independently represent a straight chain alkyl group having 2 to 8 carbon atoms, and E is a single bond, -O-, -NR c -, -S-, an ester bond, an amide It represents a bonding group selected from bonds, and R c represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.
式(1)中、RIn formula (1), R aa およびRand R bb はそれぞれ独立に炭素数2~8の直鎖アルキル基を表し、Eは単結合、-O-、-NReach independently represents a straight-chain alkyl group having 2 to 8 carbon atoms, E is a single bond, -O-, -NR cc. -、-S-、エステル結合、アミド結合から選ばれる結合基を表し、R-, -S-, an ester bond, and an amide bond, and R cc. は水素原子、炭素数1~4のアルキル基を示す。represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.
式(1)中、RIn formula (1), R aa およびRand R bb はそれぞれ独立に炭素数2~8の直鎖アルキル基を表し、Eは単結合、-O-、-NReach independently represents a straight-chain alkyl group having 2 to 8 carbon atoms, E is a single bond, -O-, -NR cc. -、-S-、エステル結合、アミド結合から選ばれる結合基を表し、R-, -S-, an ester bond, and an amide bond, and R cc. は水素原子、炭素数1~4のアルキル基を示す。represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.
(式[X-1]~[X-18]中、*は化合物分子の重合性不飽和結合以外の部分との結合部位を示し、S(In formulas [X-1] to [X-18], * indicates a bonding site with a portion other than the polymerizable unsaturated bond of the compound molecule, and S 11 、S, S 22 はそれぞれ独立して-O-、-NR-、-S-を表し、Rは水素原子又は炭素原子数1~4のアルキル基を表し、Reach independently represents -O-, -NR-, -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R 11 ,R,R 22 はそれぞれ独立して水素原子、ハロゲン原子、炭素数1~4のアルキル基を表す。)each independently represents a hydrogen atom, a halogen atom, or an alkyl group having 1 to 4 carbon atoms. )
(式[W]、[Y]、[Z]中、*は化合物分子の重合性不飽和結合以外の部分との結合部位を示し、Arは有機基及び/又はハロゲン原子を置換基として有しても良いフェニレン、ナフチレン、及びビフェニレンからなる群より選ばれる芳香族炭化水素基を示し、R(In the formulas [W], [Y], and [Z], * indicates a bonding site with a part other than a polymerizable unsaturated bond in the compound molecule, and Ar has an organic group and/or a halogen atom as a substituent. R represents an aromatic hydrocarbon group selected from the group consisting of phenylene, naphthylene, and biphenylene, which may be 99 及びRand R 1010 は、それぞれ独立に、炭素数1~10のアルキル基又は炭素数1~10のアルコキシ基を表し、Reach independently represents an alkyl group having 1 to 10 carbon atoms or an alkoxy group having 1 to 10 carbon atoms, and R 99 とRand R 1010 がアルキル基の場合、末端で互いに結合し環構造を形成していても良い。Qは下記のいずれかの構造を表す。When is an alkyl group, they may be bonded to each other at the ends to form a ring structure. Q represents any of the following structures.
(式中、R(In the formula, R 1111 は-CHHa-CH 22 -、-NR-、-O-、又は-S-を表し、Rは水素原子又は炭素原子数1~4のアルキル基を表し、*は化合物分子のQ以外の部分との結合部位を示す。)-, -NR-, -O-, or -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and * represents a bonding site with a portion of the compound molecule other than Q. )
RR 1212 は水素原子、ハロゲン原子、炭素数1~10のアルキル基又は炭素数1~10のアルコキシ基を表す。)represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, or an alkoxy group having 1 to 10 carbon atoms. )
(式(6)中、R(In formula (6), R 66 は単結合、-CHis a single bond, -CH 22 -、-O-、-COO-、-OCO-、-NHCO-、-CONH-、-NH-、-CH-, -O-, -COO-, -OCO-, -NHCO-, -CONH-, -NH-, -CH 22 O-、-N(CHO-, -N(CH 33 )-、-CON(CH)-,-CON(CH 33 )-、又は-N(CH)- or -N(CH 33 )CO-を表し、) represents CO-,
RR 77 は単結合、又は非置換もしくはフッ素原子によって置換されている炭素数1~20のアルキレン基を表し、当該アルキレン基の任意の-CHrepresents a single bond, or an alkylene group having 1 to 20 carbon atoms that is unsubstituted or substituted with a fluorine atom, and any -CH of the alkylene group 22 -又は-CF-or-CF 22 -の1以上は、それぞれ独立に-CH=CH-、二価の炭素環、および二価の複素環から選ばれる基で置き換えられていてもよく、さらに、次に挙げるいずれかの基、すなわち、-O-、-COO-、-OCO-、-NHCO-、-CONH-、又は-NH-が互いに隣り合わないことを条件に、これらの基で置き換えられていてもよい;One or more of - may be each independently replaced with a group selected from -CH=CH-, divalent carbocycle, and divalent heterocycle, and further, any of the following groups, namely , -O-, -COO-, -OCO-, -NHCO-, -CONH-, or -NH- may be substituted with these groups, provided that they are not adjacent to each other;
RR 88 は、下記式:is the following formula:
から選択されるラジカル重合反応性基を表す。Represents a radical polymerization reactive group selected from.
(式[X-1]~[X-18]中、*は化合物分子のラジカル重合反応性基以外の部分との結合部位を示し、S(In formulas [X-1] to [X-18], * indicates a bonding site with a portion other than the radical polymerization reactive group of the compound molecule, and S 11 、S, S 22 はそれぞれ独立して-O-、-NR-、-S-を表し、Rは水素原子又は炭素原子数1~4のアルキル基を表し、Reach independently represents -O-, -NR-, -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R 11 ,R,R 22 はそれぞれ独立して水素原子、ハロゲン原子、炭素数1~4のアルキル基を表す))each independently represents a hydrogen atom, a halogen atom, or an alkyl group having 1 to 4 carbon atoms))
(式(7)中、T(In formula (7), T 11 及びTand T 22 は、それぞれ独立に、単結合、-O-、-S-、-COO-、-OCO-、-NHCO-、-CONH-、-NH-、-CHeach independently represents a single bond, -O-, -S-, -COO-, -OCO-, -NHCO-, -CONH-, -NH-, -CH 22 O-、-N(CHO-, -N(CH 33 )-、-CON(CH)-,-CON(CH 33 )-、又は-N(CH)- or -N(CH 33 )CO-であり、) CO-,
Sは単結合、又は非置換もしくはフッ素原子によって置換されている炭素数1~20のアルキレン基を表し、当該アルキレン基の任意の-CHS represents a single bond, or an alkylene group having 1 to 20 carbon atoms that is unsubstituted or substituted with a fluorine atom, and any -CH of the alkylene group 22 -又は-CF-or-CF 22 -の1以上は、それぞれ独立に-CH=CH-、二価の炭素環、および二価の複素環から選ばれる基で置き換えられていてもよく、さらに、次に挙げるいずれかの基、すなわち、-O-、-COO-、-OCO-、-NHCO-、-CONH-、又は-NH-が互いに隣り合わないことを条件に、これらの基で置き換えられていてもよく、One or more of - may be each independently replaced with a group selected from -CH=CH-, divalent carbocycle, and divalent heterocycle, and further, any of the following groups, namely , -O-, -COO-, -OCO-, -NHCO-, -CONH-, or -NH- may be substituted with these groups, provided that they are not adjacent to each other,
Jは下記式で表される有機基であり、J is an organic group represented by the following formula,
(式[W]、[Y]、[Z]中、*はT(In the formulas [W], [Y], [Z], * is T 22 との結合箇所を表し、Arは有機基及び/又はハロゲン原子を置換基として有しても良いフェニレン、ナフチレン、及びビフェニレンからなる群より選ばれる芳香族炭化水素基を示し、R, Ar represents an aromatic hydrocarbon group selected from the group consisting of phenylene, naphthylene, and biphenylene, which may have an organic group and/or a halogen atom as a substituent, and R 99 及びRand R 1010 は、それぞれ独立に、炭素数1~10のアルキル基又は炭素数1~10のアルコキシ基を表し、Qは下記のいずれかの構造を表す。each independently represents an alkyl group having 1 to 10 carbon atoms or an alkoxy group having 1 to 10 carbon atoms, and Q represents any of the following structures.
(式中、R(In the formula, R 1111 は-CHHa-CH 22 -、-NR-、-O-、又は-S-を表し、Rは水素原子又は炭素原子数1~4のアルキル基を表し、*は化合物分子のQ以外の部分との結合部位を示す。)-, -NR-, -O-, or -S-, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and * represents a bonding site with a portion of the compound molecule other than Q. )
RR 1212 は水素原子、ハロゲン原子、炭素数1~10のアルキル基又は炭素数1~10のアルコキシ基を表す。))represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, or an alkoxy group having 1 to 10 carbon atoms. ))
第一基板上のラジカル発生膜が第二基板に対向するようにセルを作成するステップ、および、 creating a cell such that the radical generating film on the first substrate faces the second substrate, and
第一基板と第二基板との間に、液晶及びラジカル重合性化合物を含有する液晶組成物を充填するステップを含み、 A step of filling a liquid crystal composition containing a liquid crystal and a radically polymerizable compound between the first substrate and the second substrate,
請求項1~9のいずれか一項に記載の方法を用いる液晶セルの製造方法。 A method for manufacturing a liquid crystal cell using the method according to any one of claims 1 to 9.
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| PCT/JP2019/023835 WO2019244820A1 (en) | 2018-06-18 | 2019-06-17 | Production method for zero azimuthal anchoring film, and liquid crystal display element |
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| JPWO2019244820A1 JPWO2019244820A1 (en) | 2021-07-08 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2000290654A (en) | 1999-04-06 | 2000-10-17 | Nof Corp | Liquid crystal composite display device and manufacturing method |
| WO2015033921A1 (en) | 2013-09-03 | 2015-03-12 | 日産化学工業株式会社 | Liquid crystal aligning agent, liquid crystal alignment film, and liquid crystal display element |
| WO2016140288A1 (en) | 2015-03-04 | 2016-09-09 | 日産化学工業株式会社 | Liquid crystal aligning agent, liquid crystal alignment film and liquid crystal display element |
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| JP2013231757A (en) | 2012-04-27 | 2013-11-14 | Lg Display Co Ltd | Method of aligning liquid crystal having no anchoring in plane and non-contact liquid crystal aligning method using the same, and liquid crystal display device |
| JP2016181652A (en) * | 2015-03-25 | 2016-10-13 | 日本電気硝子株式会社 | Wavelength conversion member, manufacturing method of the same, and light-emitting device |
| JP2017214474A (en) * | 2016-05-31 | 2017-12-07 | 大阪有機化学工業株式会社 | Film forming material |
| KR20180047422A (en) * | 2016-10-31 | 2018-05-10 | 엘지디스플레이 주식회사 | Liquid Crystal Display Device And Method Of Fabricating The Same |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000290654A (en) | 1999-04-06 | 2000-10-17 | Nof Corp | Liquid crystal composite display device and manufacturing method |
| WO2015033921A1 (en) | 2013-09-03 | 2015-03-12 | 日産化学工業株式会社 | Liquid crystal aligning agent, liquid crystal alignment film, and liquid crystal display element |
| WO2016140288A1 (en) | 2015-03-04 | 2016-09-09 | 日産化学工業株式会社 | Liquid crystal aligning agent, liquid crystal alignment film and liquid crystal display element |
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| KR102779507B1 (en) | 2025-03-12 |
| JPWO2019244820A1 (en) | 2021-07-08 |
| TW202004296A (en) | 2020-01-16 |
| TWI834677B (en) | 2024-03-11 |
| CN112313571B (en) | 2024-11-19 |
| WO2019244820A1 (en) | 2019-12-26 |
| KR20210020126A (en) | 2021-02-23 |
| CN112313571A (en) | 2021-02-02 |
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