JP7369645B2 - Processing method and processing equipment - Google Patents

Description

The present disclosure relates to a processing method and a processing apparatus.

Patent Document 1 discloses a chuck table that holds a workpiece, a support section that supports the chuck table, a temperature rise measurement means that measures a temperature rise value of the support section, and a processing means for the workpiece. A processing apparatus is disclosed. In the processing apparatus described in Patent Document 1, the support part is driven in the vertical direction based on the temperature rise value of the support part measured during processing and the height position change amount data stored in advance, and the chuck is The aim is to keep the table and processing means parallel to each other at all times.

Further, Patent Document 2 discloses a holding means for holding a wafer, a grinding means for grinding the wafer, a tilting means capable of tilting the holding means with respect to the grinding means by an elevating means, and a temperature measuring means for measuring the temperature of the elevating means. A wafer grinding apparatus is disclosed, which includes a temperature measuring means. In the grinding device described in Patent Document 2, the amount of thermal deformation of the elevating means is calculated according to the measured temperature of the elevating means before and after grinding, and the amount of expansion and contraction of the elevating means is corrected to cancel the amount of thermal deformation. I am trying to do that.

Japanese Patent Application Publication No. 2011-136398 JP 2017-104952 Publication

The technology according to the present disclosure improves the flatness of a substrate processed in a processing apparatus whose internal temperature deviates from a desired processing temperature.

One aspect of the present disclosure is a method for processing a substrate in a processing device whose internal temperature deviates from a desired processing temperature, the method comprising: measuring the internal temperature of the processing device; and processing the substrate based on the measured internal temperature. adjusting the relative inclination of a holding part that holds the substrate and a grinding part that grinds the substrate, and grinding the substrate while holding the substrate at the adjusted inclination, is determined based on the correlation between the internal temperature of the processing apparatus and the finished thickness distribution of the substrate, which is obtained in advance.

According to the present disclosure, it is possible to improve the flatness of a substrate processed in a processing apparatus whose internal temperature deviates from a desired processing temperature.

FIG. 2 is a plan view schematically showing an example of the configuration of a processing device. It is a side view showing an example of composition of each grinding unit and a chuck. It is a graph showing the correlation between the internal temperature of the processing device and the finished shape of the wafer. FIG. 3 is a flow diagram showing an example of a grinding process during temperature adjustment.

In recent years, in the manufacturing process of semiconductor devices, semiconductor wafers (hereinafter referred to as "wafers") on which multiple devices such as electronic circuits are formed are thinned by grinding the back surface of the wafer. things are being done.

Grinding of the back surface of the wafer is performed by rotating the holding section while holding the front surface of the wafer by the holding section, and bringing a grinding wheel into contact with the back surface of the wafer in this state.

As a result of intensive study by the inventors, we found that if the internal temperature of the processing device (grinding device) that grinds the wafer deviates from the desired processing temperature and is not stable (for example, during warm-up of the processing device), It was discovered that the finished shape of the wafer changes depending on the change in the internal temperature of the processing equipment. More specifically, when the internal temperature changes due to warming up of the processing equipment, for example, the relative inclination (parallelism) between the grinding wheel and the holding part changes due to thermal deformation of the processing equipment, etc. They found that this changes the finished shape of the wafer. In other words, if the internal temperature of the processing equipment is not stable, even if the relative inclination between the grinding wheel and the holding part is controlled to be constant, the wafer can be kept in the desired shape and flatness (TTV: Total Thickness Variation).

In the following explanation, "warming up the processing equipment" means, for example, immediately after the processing equipment is turned off and turned on, when the internal temperature of the processing equipment changes from a low state to the desired processing temperature (during normal processing). This refers to the period during which the temperature rises to a stable state. For example, even when the power is on, the internal temperature of the processing equipment drops due to it being in a standby state, and the period from when the internal temperature drops to the desired processing temperature is similarly " "When warming up the processing equipment." In other words, "during warm-up of the processing device" refers to a case where, when the internal temperature of the processing device deviates from the desired processing temperature, the internal temperature is raised to the desired processing temperature.

On the other hand, if the internal temperature of the processing equipment is stable, the finished shape of the wafer will hardly change. In other words, when the temperature of the apparatus is stable, the wafer can be given a desired finished shape and flatness by controlling the relative inclination of the grinding wheel and the holding part to be constant.

The devices described in Patent Document 1 and Patent Document 2 adjust the grinding wheel and the grinding wheel according to the temperature change of the "inclination adjustment section" when the temperature change of the device is relatively small due to processing heat, frictional heat, etc. during processing. This is to adjust the relative inclination of the holding part, and if the temperature of the device changes significantly during warm-up or the like, there is a possibility that the relative inclination of the grinding wheel and the holding part cannot be adjusted appropriately. Therefore, there is room for improvement in the processing method using conventional processing equipment.

The technology according to the present disclosure appropriately improves the flatness of a substrate after a grinding process, particularly the flatness of a substrate processed during temperature adjustment of a processing device. The processing apparatus and processing method according to this embodiment will be described below with reference to the drawings. Note that in this specification and the drawings, elements having substantially the same functional configuration are designated by the same reference numerals and redundant explanation will be omitted.

In a processing apparatus 1 according to this embodiment, which will be described later, a wafer W serving as a substrate is thinned. The wafer W is, for example, a semiconductor wafer such as a silicon wafer or a compound semiconductor wafer. Devices are formed on the surface of the wafer W (hereinafter referred to as "surface Wa"). Then, processing such as grinding is performed on the back surface of the wafer W (hereinafter referred to as "back surface Wb"), and the wafer W is thinned.

As shown in FIG. 1, the processing apparatus 1 has a structure in which a loading/unloading station 2 and a processing station 3 are integrally connected. At the loading/unloading station 2, for example, a cassette C capable of accommodating a plurality of wafers W is loaded/unloaded to/from the outside. The processing station 3 is covered with a cover (not shown), and is equipped with various processing devices for performing desired processing on the wafer W inside the cover.

The loading/unloading station 2 is provided with a cassette mounting table 10. In the illustrated example, a plurality of cassettes C, for example, four cassettes C, can be placed on the cassette mounting table 10 in a line in the X-axis direction. Note that the number of cassettes C placed on the cassette mounting table 10 is not limited to this embodiment, and can be arbitrarily determined.

The loading/unloading station 2 is provided with a wafer transfer area 20 adjacent to the cassette mounting table 10 on the Y-axis positive direction side of the cassette mounting table 10 . The wafer transfer area 20 is provided with a wafer transfer device 22 configured to be movable on a transfer path 21 extending in the X-axis direction.

The wafer transport device 22 has a transport fork 23 that holds and transports the wafer W before and after the grinding process. The transport fork 23 has two branched ends and holds the wafer W by suction. Further, the transport fork 23 is configured to be movable in the horizontal direction, vertical direction, around the horizontal axis, and around the vertical axis. Note that the configuration of the wafer transfer device 22 is not limited to this embodiment, and may have any configuration. The wafer transport device 22 is configured to be able to transport the wafer W to the cassette C of the cassette mounting table 10, the alignment unit 50, and the first cleaning unit 60.

At the processing station 3, processing such as grinding and cleaning is performed on the wafer W. The processing station 3 includes a transport unit 30 that transports the wafer W, a grinding unit 40 that performs a grinding process on the wafer W, an alignment unit 50 that adjusts the horizontal orientation of the wafer W before the grinding process, and a wafer W after the grinding process. The wafer W has a first cleaning unit 60 that spin-cleans the back surface Wb of the wafer W, and a second cleaning unit 70 that cleans the front surface Wa of the wafer W after the grinding process.

The transport unit 30 is an articulated robot having a plurality of arms 31, for example, three arms. Each of the three arms 31 is configured to be rotatable. A transfer pad 32 for sucking and holding the wafer W is attached to the arm 31 at the tip. Further, the arm 31 at the base end is attached to a lifting mechanism 33 that raises and lowers the arm 31 in the vertical direction. Note that the configuration of the transport unit 30 is not limited to this embodiment, and may have any configuration. The transport unit 30 is configured to be able to transport the wafer W to a delivery position A0 of the grinding unit 40, an alignment unit 50, a first cleaning unit 60, and a second cleaning unit 70, which will be described later.

The grinding unit 40 is provided with a rotary table 41. Four chucks 42 are provided on the rotary table 41 and serve as holding sections for holding the wafer W by suction. The four chucks 42 are movable to the delivery position A0 and the processing positions A1 to A3 as the rotary table 41 rotates. Further, each of the four chucks 42 is configured to be rotatable around a vertical axis by a rotation mechanism 44, which will be described later.

At the transfer position A0, the transfer unit 30 transfers the wafer W. A rough grinding unit 80 is arranged at the processing position A1, and roughly grinds the wafer W. A medium grinding unit 90 is arranged at the processing position A2, and medium grinds the wafer W. A finish grinding unit 100 is arranged at the processing position A3, and performs finish grinding of the wafer W.

For example, a porous chuck is used as the chuck 42, and holds the surface Wa of the wafer W by suction. The surface of the chuck 42, that is, the holding surface of the wafer W, has a convex shape in which the center portion is more protruding than the end portions when viewed from the side. Note that since the protrusion of this central portion is minute, the convex shape of the chuck 42 is omitted in the illustration.

As shown in FIG. 2, the chuck 42 is held on a chuck base 43. The chuck base 43 is provided with a rotation mechanism 44 that rotates the chuck 42 and the chuck base 43, and a tilt adjustment mechanism 45 that adjusts the tilt of the chuck 42 and the chuck base 43 from the horizontal direction.

The rotation mechanism 44 includes a rotation shaft 110 that rotates the chuck 42, a drive section 120 that provides rotational drive when rotating the chuck 42, and a drive transmission section 130 that transmits the rotational drive of the drive section 120 to the rotation shaft 110. have. The rotating shaft 110 is fixedly provided at the center of the lower surface of the chuck base 43. Further, the rotating shaft 110 is rotatably supported by a support base 111. The chuck 42 rotates around this rotating shaft 110.

The drive unit 120 is provided independently of the rotating shaft 110. The drive unit 120 includes a drive shaft 121 and a motor 122 that rotates the drive shaft 121.

The drive transmission unit 130 includes a driven pulley 131 provided on the rotating shaft 110, a driving pulley 132 provided on the driving shaft 121, and a belt 133 wound around the driven pulley 131 and the driving pulley 132. . The rotational drive by the drive unit 120 is transmitted to the rotating shaft 110 via a drive pulley 132, a belt 133, and a driven pulley 131.

Note that the configuration of the rotation mechanism 44 is not limited to this, and can be arbitrarily selected as long as the chuck 42 can be rotated.

The tilt adjustment mechanism 45 as a tilt adjustment section has one fixed shaft 140 provided on the lower surface of the chuck base 43 and a plurality of, for example, two lifting shafts 141, 141. Each lifting shaft 141 is configured to be extendable and retractable by a motor 122, and raises and lowers the chuck base 43. This inclination adjustment mechanism 45 allows the chuck base 43 to be raised and lowered in the vertical direction by the lifting shaft 141 from one end (position corresponding to the fixed shaft 140) of the outer periphery of the chuck base 43 as a base point. 43 can be tilted. This adjusts the relative inclination of the chuck 42 and the various grinding units at the processing positions A1 to A3, that is, the inclination of the chuck 42 (and the back surface Wb of the held wafer W) with respect to the grinding wheel provided in the various grinding units. can do.

Note that the configuration of the inclination adjustment mechanism 45 is not limited to this, and can be arbitrarily selected as long as the relative angle (parallelism) of the wafer W with respect to the grinding wheel can be adjusted.

The rough grinding unit 80 includes a rough grinding wheel 81 equipped with an annular rough grinding wheel on the lower surface, a mount 82 that supports the rough grinding wheel 81, a spindle 83 that rotates the rough grinding wheel 81 via the mount 82, and, for example, It has a drive section 84 containing a motor (not shown). Further, the rough grinding unit 80 is configured to be movable in the vertical and horizontal directions along a support 85 shown in FIG. In the rough grinding unit 80, the chuck 42 and the rough grinding wheel 81 are rotated, respectively, with the back surface Wb of the wafer W held by the chuck 42 and a part of the circular arc of the annular rough grinding wheel being in contact with each other. The back surface Wb of the wafer W is roughly ground.

The intermediate grinding unit 90 has the same configuration as the rough grinding unit 80. That is, the medium grinding unit 90 includes a medium grinding wheel 91 including an annular medium grinding wheel, a mount 92, a spindle 93, a drive section 94, and a support 95. Note that the grain size of the abrasive grains of the medium grinding wheel is smaller than the grain size of the abrasive grains of the coarse grinding wheel.

The finish grinding unit 100 has the same configuration as the rough grinding unit 80 and the intermediate grinding unit 90. That is, the finish grinding unit 100 includes a finish grinding wheel 101 including an annular finish grinding wheel, a mount 102, a spindle 103, a drive unit 104, and a support 105. Note that the grain size of the abrasive grains of the finish grinding wheel is smaller than the grain size of the abrasive grains of the intermediate grinding wheel.

In addition, in this embodiment, the rough grinding unit 80, the intermediate grinding unit 90, and the finish grinding unit 100 constitute the grinding part in this indication.

As shown in FIG. 1, the processing station 3 is provided with a thickness measuring mechanism 150 as a thickness distribution measuring section that measures the thickness of the wafer W after the grinding process by the finish grinding unit 100. The thickness measuring mechanism 150 is provided, for example, at the processing position A3 or the delivery position A0. The thickness measuring mechanism 150 includes, for example, a non-contact type sensor (not shown) and a calculation section (not shown). Then, the thickness measuring mechanism 150 obtains the thickness distribution of the wafer W from the measurement results (the thickness of the wafer W) at a plurality of points by the sensor, and calculates the TTV data of the wafer W.

In addition, as shown in FIG. 1, the processing apparatus 1 records the internal temperature of the processing apparatus 1 during processing of the wafer W, specifically, the internal temperature of the processing station 3 covered by a cover body (not shown) as described above. A temperature measuring mechanism 160 is provided as a temperature measuring section for measuring. The temperature measurement mechanism 160 can have any configuration and arrangement as long as it can measure the internal temperature of the processing device 1 (processing station 3). It is desirable to measure.

The processing apparatus 1 described above is provided with a control section 170. The control unit 170 is, for example, a computer equipped with a CPU, a memory, etc., and has a program storage unit (not shown). The program storage section stores a program for controlling the processing of the wafer W in the processing apparatus 1. Note that the above program may be one that has been recorded on a computer-readable storage medium H, and may have been installed in the control unit 170 from the storage medium H.

Next, a processing method performed using the processing apparatus 1 configured as described above will be explained.

First, a cassette C containing a plurality of wafers W is placed on the cassette mounting table 10 of the loading/unloading station 2 . Next, the wafer W is taken out from the cassette C by the transport fork 23 of the wafer transport device 22 and transported to the alignment unit 50 of the processing station 3. In the alignment unit 50, the horizontal direction of the wafer W is adjusted by adjusting the position of a notch portion (not shown) formed in the wafer W.

The wafer W whose horizontal orientation has been adjusted is then transported from the alignment unit 50 by the transport unit 30 and delivered to the chuck 42 at the delivery position A0. Subsequently, the rotary table 41 is rotated to sequentially move the wafer W held by the chuck 42 to processing positions A1 to A3.

At the processing position A1, the back surface Wb of the wafer W is roughly ground by the rough grinding unit 80. At the processing position A2, the back surface Wb of the wafer W is subjected to medium grinding by the medium grinding unit 90. Further, at the processing position A3, the finish grinding unit 100 performs finish grinding on the back surface Wb of the wafer W.

Next, the rotary table 41 is rotated to move the chuck 42 to the delivery position A0. Subsequently, the wafer W is transported from the transfer position A0 to the second cleaning unit 70 by the transport unit 30, and the front surface Wa of the wafer W is cleaned and dried while being held on the transport pad 32.

Next, the wafer W is transported from the second cleaning unit 70 to the first cleaning unit 60 by the transport unit 30, and the back surface Wb of the wafer W is cleaned using a cleaning liquid nozzle (not shown).

Thereafter, the wafer W that has been subjected to all the processes is transported to the cassette C of the cassette mounting table 10 by the transport fork 23 of the wafer transport device 22. In this way, a series of machining processes in the machining device 1 are completed.

Next, a warm-up method for the processing apparatus 1 will be described as an example of a method for adjusting the temperature of the processing apparatus 1. Warm-up is a process of raising and stabilizing the internal temperature of the processing apparatus 1 to a desired processing temperature, for example, when the processing apparatus 1 is started up or returned from a standby state. Note that the internal temperature of the processing apparatus 1 during warm-up is determined by various factors, such as processing heat and frictional heat generated during processing of the wafer W, and drive heat generated during the operation of the chuck 42 and various grinding units. Increases depending on factors.

Here, as described above, if the internal temperature of the processing apparatus 1 is not stable during warm-up, the finished shape of the wafer W changes with the change in the internal temperature of the processing apparatus 1, and the desired finished shape is obtained. and flatness cannot be obtained. On the other hand, when the processing apparatus 1 has finished warming up and the internal temperature of the processing apparatus 1 is stable, the finished shape of the wafer W remains almost unchanged, and a desired finished shape and flatness can be obtained.

The inventors of the present invention conducted extensive studies and found that there is a correlation between the internal temperature of the processing apparatus 1 and the finished shape of the wafer W when the processing apparatus 1 is warmed up. That is, by controlling the relative inclination between the chuck 42 as a holding part and the grinding wheels provided in various grinding units based on the correlation, the wafer W can be kept in the desired finished shape even when the processing apparatus 1 is warmed up. It has been found that the flatness can be improved by processing the same.

Specifically, the present inventors used the processing apparatus 1 to grind a plurality of dummy wafers under the same grinding conditions as the actual grinding conditions of the wafers W (internal temperature at the start of grinding, amount of wafers W to be ground, number of processed wafers, etc.). The processing was performed, and the finished shape of the dummy wafer and the internal temperature of the processing apparatus 1 were plotted. That is, the grinding unit 40 sequentially performs rough grinding, medium grinding, and finish grinding of the dummy wafer, and the thickness measuring mechanism 150 measures the in-plane thickness distribution as the finished shape of the dummy wafer after the finish grinding process. The internal temperature of the device 1 was measured by the temperature measuring mechanism 160. Note that during the grinding process of the plurality of dummy wafers, the relative inclinations of the chuck 42 and the various grinding units are not changed.

FIG. 3 is a graph showing the correlation between the internal temperature of the processing apparatus 1 obtained by grinding a plurality of dummy wafers and the finished shape of the dummy wafers. In FIG. 3, the horizontal axis shows the number of dummy wafers to be processed (the number of processed wafers), the first vertical axis shows the TTV of the finished shape of the dummy wafer, and the second vertical axis shows the internal temperature of the processing apparatus 1. Note that TTV shown on the first vertical axis in FIG. 3 represents the variation in thickness specified at multiple points within the surface of the finished shape of the dummy wafer Wd. That is, the smaller the measured TTV, the more uniform the thickness of the finished shape of the dummy wafer is within the surface.

Referring to FIG. 3, it can be seen that there is a correlation between the internal temperature of the processing apparatus 1 and the finished shape of the dummy wafer Wd, as described above. Specifically, during warm-up, as the dummy wafer Wd is repeatedly processed, the internal temperature rises. It can be seen that the TTV of the finished shape changes.

Here, the correlation between the internal temperature and the finished shape was obtained by grinding the dummy wafer Wd under the same grinding conditions as the actual grinding conditions of the wafer W, as described above. In other words, even in actual grinding of the wafer W, the correlation between the internal temperature of the processing apparatus 1 and the finished shape of the wafer W is considered to be appropriately reproduced.

Therefore, in the grinding process during warm-up of the processing apparatus 1 according to the present embodiment, based on the correlation between the internal temperature and the finished shape shown in FIG. Adjust the relative inclination with the whetstone.

Specifically, when grinding the wafer W in the processing apparatus 1 during warm-up, first, the internal temperature of the processing apparatus 1 is measured (step S1 in FIG. 4).

Next, based on the measured internal temperature, the V component of the finished shape of the wafer W is predicted from the correlation shown in FIG. 3 (step S2 in FIG. 4).

Next, the in-plane thickness of the wafer W is increased so that the predicted TTV becomes smaller, that is, by increasing the amount of grinding at the position where the finished thickness is judged to be large and decreasing the amount of grinding at the position where the finished thickness is judged to be small. The relative inclination of the chuck 42 and the grinding wheel is adjusted so that the grinding wheel becomes uniform (step S3 in FIG. 4). That is, the relative inclination of the chuck 42 and the various grinding units is adjusted based on the correlation, thereby adjusting the amount of grinding of the wafer W in the grinding unit 40.

Then, various grinding processes are performed while holding the wafer W at the adjusted inclination (step S4 in FIG. 4).

According to the above embodiment, when grinding the wafer W in the processing apparatus 1, the chuck 42 that holds the wafer W Since the relative inclination between the wafer W and the grinding unit that grinds the wafer W is adjusted, the flatness of the wafer W can be appropriately improved.

Furthermore, here, the correlation between the internal temperature of the processing apparatus 1 and the finished shape of the dummy wafer Wd is obtained by grinding the dummy wafer Wd under the same grinding conditions as the actual grinding conditions of the wafer W. Even in actual grinding, the correlation between internal temperature and finished shape is properly reproduced. That is, the flatness of the wafer W can be improved more appropriately.

Here, in conventional processing equipment, if the internal temperature of the processing equipment was not stable, the wafer W could not be processed into the desired finished shape and flatness. There are cases where the grinding process of the wafer W is started later. That is, since the processing of the wafer W was not performed during the warm-up of the processing equipment, there was a risk that the downtime of the processing equipment would be prolonged if the warm-up time was taken, and the throughput of the processing of the wafers W would be reduced. .

On the other hand, according to the present embodiment, the relative inclination between the chuck 42 and the grinding unit is adjusted based on the internal temperature of the processing apparatus 1, so that the wafer W can be properly handled even when the processing apparatus 1 is warmed up. It can be processed into the desired finished shape and flatness. In other words, even if the internal temperature of the processing apparatus 1 is unstable, the processing of the wafer W can be performed appropriately, that is, there is no need to perform warm-up processing, so that the throughput of processing can be improved. Can be done.

According to the above embodiment, when grinding the wafer W, the relative inclination between the chuck 42 and the grinding unit is adjusted based on the correlation obtained by grinding the dummy wafer Wd in advance. However, the correlation may be further corrected based on the grinding process of the wafer W. That is, the finished thickness distribution of the wafer W after the grinding process may be measured by the thickness measuring mechanism 150, and the correlation may be successively corrected based on the measured TTV data. By correcting the correlation based on the TTV data of the wafer W in this way, the flatness can be further appropriately improved in the subsequent grinding process of the wafer W.

Note that the adjustment of the relative inclination between the chuck 42 and the grinding unit based on the internal temperature of the processing device 1 in the above embodiment is performed after the temperature adjustment of the processing device 1 is completed and the internal temperature of the processing device 1 is stabilized. It does not have to be done in . In such a case, by feeding back the grinding process results (TTV data) of other wafers W that have been processed before the one wafer W being processed to the grinding process of the one wafer W, the one wafer The flatness of W can be improved.

In addition, in the above embodiment, the temperature adjustment control of the processing apparatus 1 has been described using the case where the processing apparatus 1 is warmed up, but the technology according to the present disclosure is applicable to cases where the internal temperature of the processing apparatus 1 is not stable. Can be applied in any case.

In the above embodiment, the case where the wafer W is ground and thinned in the processing apparatus 1 has been described as an example, but the present invention is not limited to this. For example, in a stacked wafer in which a first wafer and a second wafer are bonded, the present embodiment can be applied to the case where the first wafer is ground and thinned.

The embodiments disclosed this time should be considered to be illustrative in all respects and not restrictive. The embodiments described above may be omitted, replaced, or modified in various forms without departing from the scope and spirit of the appended claims.

1 Processing equipment 42 Chuck 80 Rough grinding unit 90 Medium grinding unit 100 Finish grinding unit W Wafer

Claims (8)

A method of processing a substrate in a processing device in which the internal temperature deviates from a desired processing temperature, the method comprising:
Measuring the internal temperature of the processing device;
adjusting the relative inclination of the holding part that holds the substrate and the grinding part that grinds the substrate based on the measured internal temperature;
Grinding the substrate while holding the substrate at the adjusted tilt,
In the processing method, the slope is determined based on a correlation between an internal temperature of the processing apparatus and a finished thickness distribution of the substrate, which is obtained in advance. Measuring the finished thickness distribution of the substrate after grinding,
The processing method according to claim 1, comprising correcting the correlation based on the measured finished thickness distribution of the substrate. Adjusting the slope based on the correlation,
When the measured internal temperature is lower than the desired processing temperature at the start of processing of the substrate in the processing apparatus,
The processing method according to claim 1 or 2, wherein the processing is performed until the internal temperature of the processing device reaches the desired processing temperature. 4. The processing method according to claim 3, wherein the adjustment of the slope based on the correlation is not performed after the internal temperature of the processing device reaches the desired processing temperature. A substrate processing device,
a holding part that holds the board;
a grinding section that grinds the substrate held by the holding section;
a temperature measurement unit that measures the internal temperature of the processing device;
an inclination adjustment part that adjusts the relative inclination of the holding part and the grinding part;
A control unit that controls processing of the substrate,
The control section includes:
A correlation between the internal temperature of the processing device and the finished thickness distribution of the substrate is stored in advance,
In a case where the internal temperature of the processing device is out of the desired processing temperature,
Adjusting the relative inclination of the holding part and the grinding part based on the internal temperature measured by the temperature measuring part,
A processing device that controls operations of the tilt adjustment section and the grinding section so as to grind the substrate while holding the substrate at the adjusted tilt. Equipped with a thickness distribution measurement section that measures the finished thickness distribution of the board,
The control unit includes:
Measuring the finished thickness distribution of the substrate after grinding by the thickness distribution measuring section,
The processing apparatus according to claim 5, wherein the correlation is corrected based on the measured finished thickness distribution of the substrate. The control unit includes:
Adjusting the relative inclination of the holding part and the grinding part based on the correlation,
When the measured internal temperature is lower than the desired processing temperature at the start of grinding of the substrate by the grinding unit,
The processing apparatus according to claim 5 or 6, wherein the operation of the inclination adjusting section is controlled to be performed until the internal temperature of the processing apparatus reaches the desired processing temperature. The control unit includes:
The processing apparatus according to claim 7, wherein the operation of the inclination adjusting section is controlled so that the inclination is not adjusted based on the correlation after the internal temperature of the processing apparatus reaches the desired processing temperature. .

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