JP7372079B2 - Heating member cleaning method and substrate processing equipment - Google Patents

Description

The present invention relates to a heating member cleaning method and a substrate processing apparatus.

2. Description of the Related Art Substrate processing apparatuses that process substrates are known. For example, substrate processing apparatuses are used to manufacture semiconductor substrates or glass substrates. 2. Description of the Related Art In recent years, semiconductors have become highly integrated and miniaturized, but this has caused a problem in that patterns formed on substrates collapse.

Therefore, in order to prevent the pattern within the substrate from collapsing, consideration has been given to replacing the pure water used in processing the substrate with isopropyl alcohol (IPA) for drying. When drying IPA, a heating member is used to dry IPA from the substrate (for example, see Patent Document 1). In the substrate processing apparatus of Patent Document 1, drying of IPA from the substrate is promoted by arranging an irradiation section equipped with a lamp near the substrate.

Japanese Patent Application Publication No. 2015-29041

However, when the irradiation section is placed near the substrate, the processing liquid used to treat the substrate may adhere to the irradiation section. The deposits adhering to the irradiation section deteriorate the atmosphere around the substrate, and there is a risk that the deposits may re-adhere to the substrate and deteriorate the characteristics of the substrate.

The present invention has been made in view of the above problems, and an object thereof is to provide a heating member cleaning method and a substrate processing apparatus that can efficiently clean the heating member of a substrate processing apparatus.

According to one aspect of the present invention, a method for cleaning a heating member of a substrate processing apparatus includes the steps of: supplying a rinsing liquid to an upper surface of the heating member; The method includes a step of selectively supplying a chemical solution to an outer peripheral portion of the upper surface of the heating member, and a step of discharging the chemical solution from the upper surface of the heating member.

In one embodiment, the heating member cleaning method further includes the step of supplying gas to the upper surface of the heating member after supplying the rinsing liquid and before selectively supplying the chemical solution.

In one embodiment, in the step of supplying the gas, the gas is supplied to the center of the upper surface of the heating member.

In an embodiment, the heating member cleaning method according to claim 2 or 3, wherein the step of supplying the gas includes a step of forming the rinsing liquid in a ring shape at the outer peripheral portion of the upper surface of the heating member. .

In one embodiment, the step of selectively supplying the chemical solution includes the step of forming the chemical solution into a ring shape on the outer periphery of the upper surface of the heating member.

In one embodiment, the step of discharging the chemical liquid includes the step of moving the chemical liquid to an end of the upper surface of the heating member and discharging the chemical liquid from the end of the upper surface of the heating member.

In one embodiment, the step of discharging the chemical solution includes the step of supplying gas to the center of the upper surface of the heating member.

In one embodiment, the step of discharging the chemical solution includes the step of rotating the heating member.

According to another aspect of the present invention, a substrate processing apparatus includes a substrate holding section, a heating member, a rinsing liquid supply section, a chemical solution supply section, and a control section. The substrate holder is used to hold a substrate. The heating member faces the back surface of the substrate held by the substrate holder. The control section controls the heating member, the chemical solution supply section, and the rinse liquid supply section. After supplying a rinsing liquid to the upper surface of the heating member, the control unit selectively supplies a chemical liquid to an outer peripheral portion of the upper surface of the heating member so that the chemical liquid is mixed with the rinsing liquid on the upper surface of the heating member. The rinsing liquid supply section and the chemical solution supply section are controlled so that they are mixed.

In one embodiment, the substrate processing apparatus further includes a gas supply unit, and the control unit controls the heating member before selectively supplying the chemical to the outer peripheral portion of the upper surface of the heating member. After supplying the rinsing liquid to the upper surface of the heating member, the gas supply section is controlled to supply gas to the upper surface of the heating member.

In one embodiment, the control unit controls the gas supply unit to form the rinsing liquid in a ring shape by supplying the gas to the upper surface of the heating member.

In one embodiment, the control unit controls the gas supply unit to supply the gas to the center of the heating member after selectively supplying the chemical to the outer peripheral portion of the upper surface of the heating member. do.

In one embodiment, the heating member is configured to be rotatable, and the control unit rotates the heating member after selectively supplying the chemical solution to the outer peripheral portion of the upper surface of the heating member. The heating member is controlled as follows.

According to the present invention, the heating member of the substrate processing apparatus can be efficiently cleaned.

FIG. 1 is a schematic diagram of a substrate processing apparatus of this embodiment. FIG. 1 is a schematic diagram of a substrate processing apparatus of this embodiment. FIG. 1 is a block diagram of a substrate processing apparatus according to the present embodiment. (a) to (f) are schematic diagrams for explaining the heating member cleaning method of the present embodiment. (a) to (e) are schematic diagrams for explaining the heating member cleaning method of the present embodiment. FIG. 3 is a flow diagram for explaining a substrate processing method using the substrate processing apparatus of the present embodiment. FIG. 1 is a schematic diagram of a substrate processing apparatus of this embodiment. FIG. 1 is a schematic diagram of a substrate processing apparatus of this embodiment. FIG. 2 is a flow diagram for explaining a heating member cleaning method according to the present embodiment. FIG. 1 is a schematic diagram of a substrate processing apparatus of this embodiment. FIG. 1 is a schematic diagram of a substrate processing apparatus of this embodiment. FIG. 1 is a schematic diagram of a substrate processing apparatus of this embodiment. 3 is a flowchart for explaining a substrate processing method using the substrate processing apparatus of the present embodiment. FIG. 1 is a schematic diagram of a substrate processing apparatus of this embodiment. FIG. 1 is a schematic diagram of a substrate processing apparatus of this embodiment.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of a substrate processing apparatus and a heating member cleaning method according to the present invention will be described with reference to the drawings. In addition, in the drawings, the same or corresponding parts are given the same reference numerals and the description will not be repeated. Note that in this specification, in order to facilitate understanding of the invention, an X-axis, a Y-axis, and a Z-axis that are perpendicular to each other may be described. Typically, the X and Y axes are parallel to the horizontal direction, and the Z axis is parallel to the vertical direction.

First, with reference to FIG. 1, an embodiment of a substrate processing apparatus 100 according to the present invention will be described. FIG. 1 is a schematic plan view of a substrate processing apparatus 100 of this embodiment.

The substrate processing apparatus 100 processes a substrate W. The substrate processing apparatus 100 processes the substrate W to perform at least one of etching, surface treatment, imparting properties, forming a treated film, removing at least a portion of the film, and cleaning.

The substrate W is, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (FED), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, or a photomask. including solar cell substrates, ceramic substrates, and solar cell substrates. For example, the substrate W has a substantially disk shape. Here, the substrate processing apparatus 100 processes the substrates W one by one.

As shown in FIG. 1, the substrate processing apparatus 100 includes a plurality of chambers 110, a fluid cabinet 100A, a fluid box 100B, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a control device 101. Equipped with. The control device 101 controls the load port LP, indexer robot IR, and center robot CR. Control device 101 includes a control section 102 and a storage section 104.

Each of the load ports LP accommodates a plurality of stacked substrates W. The indexer robot IR transports the substrate W between the load port LP and the center robot CR. The center robot CR transports the substrate W between the indexer robot IR and the chamber 110. Each of the chambers 110 discharges a processing liquid onto the substrate W to process the substrate W. The processing liquid includes a chemical solution, a rinsing liquid, and/or an organic solvent. Fluid cabinet 100A contains processing liquid and gas.

Specifically, the plurality of chambers 110 form a plurality of towers TW (four towers TW in FIG. 1) arranged so as to surround the center robot CR in plan view. Each tower TW includes a plurality of chambers 110 (three chambers 110 in FIG. 1) stacked one above the other. Each fluid box 100B corresponds to a plurality of towers TW. The processing liquid in the fluid cabinet 100A is supplied to all the chambers 110 included in the tower TW corresponding to the fluid box 100B via one of the fluid boxes 100B. Further, the gas in the fluid cabinet 100A is supplied to all the chambers 110 included in the tower TW corresponding to the fluid box 100B via any one of the fluid boxes 100B.

The substrate processing apparatus 100 further includes a control device 101. The control device 101 controls various operations of the substrate processing apparatus 100.

Control device 101 includes a control section 102 and a storage section 104. Control unit 102 has a processor. The control unit 102 includes, for example, a central processing unit (CPU). Alternatively, the control unit 102 may include a general-purpose computing machine.

Storage unit 104 stores data and computer programs. The data includes recipe data. The recipe data includes information indicating multiple recipes. Each of the plurality of recipes defines processing contents and processing procedures for the substrate W.

Storage unit 104 includes a main storage device and an auxiliary storage device. The main storage device is, for example, a semiconductor memory. The auxiliary storage device is, for example, a semiconductor memory and/or a hard disk drive. Storage unit 104 may include removable media. The control unit 102 executes a computer program stored in the storage unit 104 to perform a substrate processing operation.

Next, with reference to FIG. 2, the substrate processing apparatus 100 of this embodiment will be described. FIG. 2 is a schematic diagram of the substrate processing apparatus 100.

The substrate processing apparatus 100 includes a chamber 110 , a substrate holding section 120 , a chemical solution supply section 132 , a rinsing liquid supply section 134 , an organic solvent supply section 136 , a gas supply section 140 , and a heating member 150 . Chamber 110 accommodates substrate W. The substrate holding section 120 holds the substrate W. The rinse liquid supply unit 134 supplies a rinse liquid to the substrate W. The organic solvent supply unit 136 supplies the substrate W with an organic solvent. Note that in this specification, the chemical solution supply section 132, the rinsing liquid supply section 134, and the organic solvent supply section 136 may be collectively referred to as the processing liquid supply section 130. The gas supply unit 140 supplies gas to the substrate W. The heating member 150 heats the substrate W.

The chamber 110 is approximately box-shaped with an internal space. Chamber 110 accommodates substrate W. Here, the substrate processing apparatus 100 is a single-wafer type that processes substrates W one by one, and the chamber 110 accommodates one substrate W at a time. The substrate W is accommodated within the chamber 110 and processed within the chamber 110. The chamber 110 accommodates at least a portion of each of the substrate holding section 120 , the chemical solution supply section 132 , the rinsing liquid supply section 134 , the organic solvent supply section 136 , and the heating member 150 .

The substrate holding section 120 holds the substrate W. The substrate holding unit 120 holds the substrate W horizontally so that the upper surface (front surface) Wa of the substrate W faces upward and the back surface (lower surface) Wb of the substrate W faces vertically downward. Further, the substrate holding unit 120 rotates the substrate W while holding the substrate W.

For example, the substrate holder 120 may be a clamping type that clamps an end of the substrate W. Alternatively, the substrate holding section 120 may have any mechanism for holding the substrate W from the back surface Wb. For example, the substrate holding section 120 may be of a vacuum type. In this case, the substrate holding unit 120 holds the substrate W horizontally by adsorbing the center portion of the back surface Wb of the substrate W, which is a non-device forming surface, to the upper surface. Alternatively, the substrate holder 120 may combine a clamping type in which a plurality of chuck pins are brought into contact with the peripheral end surface of the substrate W and a vacuum type.

For example, the substrate holder 120 includes a spin base 121, a chuck member 122, a shaft 123, an electric motor 124, and a housing 125. The chuck member 122 is provided on the spin base 121. The chuck member 122 chucks the substrate W. Typically, the spin base 121 is provided with a plurality of chuck members 122.

Shaft 123 is a hollow shaft. The shaft 123 extends vertically along the rotation axis Ax. A spin base 121 is coupled to the upper end of the shaft 123. The substrate W is placed above the spin base 121.

The spin base 121 has a disk shape and supports the substrate W horizontally. The shaft 123 extends downward from the center of the spin base 121. Electric motor 124 provides rotational force to shaft 123. The electric motor 124 rotates the substrate W and the spin base 121 about the rotation axis Ax by rotating the shaft 123 in the rotational direction. Housing 125 surrounds shaft 123 and electric motor 124.

The chemical liquid supply unit 132 supplies a chemical liquid to the upper surface Wa of the substrate W. The upper surface Wa of the substrate W can be treated by chemical treatment using a chemical solution. By chemical treatment, it is possible to perform any one of etching, surface treatment, imparting properties, forming a treated film, and removing at least a portion of the film on the substrate W. Typically, the chemical solution is an etching solution used for etching the substrate W.

The chemical solution contains hydrofluoric acid. For example, hydrofluoric acid may be heated to 40°C or more and 70°C or less, or may be heated to 50°C or more and 60°C or less. However, hydrofluoric acid does not need to be heated. Note that the chemical solution may further contain hydrogen peroxide solution. Further, the chemical solution may include SC1 (ammonia hydrogen peroxide solution mixture), SC2 (hydrochloric acid hydrogen peroxide solution mixture), or aqua regia (mixture of concentrated hydrochloric acid and concentrated nitric acid).

The chemical supply unit 132 includes a pipe 132a, a valve 132b, and a nozzle 132n. The nozzle 132n discharges a chemical onto the upper surface Wa of the substrate W. The nozzle 132n is connected to the pipe 132a. A chemical solution is supplied to the pipe 132a from a supply source. The valve 132b opens and closes the flow path within the pipe 132a. It is preferable that the nozzle 132n is configured to be movable with respect to the substrate W.

The rinsing liquid supply unit 134 supplies a rinsing liquid to the upper surface Wa of the substrate W. By the rinsing process using the rinsing liquid, the chemical solution, impurities, etc. attached to the upper surface Wa of the substrate W can be washed away. The rinsing liquid supplied from the rinsing liquid supply unit 134 includes deionized water (DIW), carbonated water, electrolyzed ionized water, ozone water, ammonia water, hydrochloric acid water with a diluted concentration (for example, about 10 ppm to 100 ppm), Alternatively, it may contain either reduced water (hydrogen water).

The rinse liquid supply section 134 includes a pipe 134a, a valve 134b, and a nozzle 134n. The nozzle 134n discharges a rinse liquid onto the upper surface Wa of the substrate W. Nozzle 134n is connected to piping 134a. A rinsing liquid is supplied to the pipe 134a from a supply source. The valve 134b opens and closes the flow path within the pipe 134a.

The organic solvent supply unit 136 supplies an organic solvent to the upper surface Wa of the substrate W. By the organic solvent treatment using an organic solvent, the rinsing liquid on the upper surface Wa of the substrate W can be replaced with the organic solvent. Typically, the volatility of the organic solvent is higher than that of the rinse solution.

The organic solvent supplied from the organic solvent supply unit 136 may include isopropyl alcohol (IPA). Alternatively, the organic solvent may be methanol, ethanol, acetone, hydrofluoro ether (HFE), propylene glycol ethyl ether (PGEE), or propylene glycol monomethyl ether acetate (propylene glycol monomethyl ether acetate). Monomethyl ether acetate: PGMEA ) may also be included.

The organic solvent supply section 136 includes a pipe 136a, a valve 136b, and a nozzle 136n. The nozzle 136n discharges an organic solvent onto the upper surface Wa of the substrate W. Nozzle 136n is connected to piping 136a. An organic solvent is supplied to the pipe 136a from a supply source. The valve 136b opens and closes the flow path within the pipe 136a.

The gas supply unit 140 supplies gas to the substrate W. For example, the gas supply unit 140 supplies gas to the upper surface Wa of the substrate W. The gas supplied from the gas supply unit 140 is, for example, an inert gas. In one example, the gas includes nitrogen gas.

The gas supply section 140 includes a pipe 140a, a valve 140b, and a nozzle 140n. Valve 140b is arranged in piping 140a. Piping 140a guides gas into chamber 110. The valve 140b opens and closes the flow path within the pipe 140a.

The heating member 150 heats the substrate W held by the substrate holding section 120. The heating member 150 has a thin disc shape. Heating member 150 is also called a hot plate. The heating member 150 is arranged between the substrate W and the substrate holding section 120. Specifically, the heating member 150 is arranged above the spin base 121.

The heating member 150 may or may not be in contact with the substrate W. Further, the heating member 150 may be movable relative to the substrate W held by the substrate holding section 120. When the heating member 150 is movable, it is preferable that the heating member 150 starts heating the substrate W while being moved so that the distance between the substrate W and the heating member 150 is shortened.

Heating member 150 has a top surface 150a, a back surface 150b, and a side surface 150c. Side surface 150c connects top surface 150a and back surface 150b. The upper surface 150a of the heating member 150 faces the back surface Wb of the substrate W. Further, the back surface 150b of the heating member 150 faces the spin base 121. Further, a side surface 150c of the heating member 150 faces the chuck member 122. Although the heating member 150 does not rotate here, the heating member 150 may be configured to rotate.

Heating member 150 includes a main body portion 152, a heater 154, a support portion 155, and a current supply unit 156. For example, main body portion 152 is formed using ceramic or silicon carbide (SiC). The surface of the main body portion 152 may be made hydrophobic. The heater 154 is built into the main body 152. Heater 154 may be a resistor.

The main body portion 152 has a disk shape extending in the horizontal direction. The main body portion 152 is attached to a support portion 155 extending in the vertical direction. The support portion 155 supports the main body portion 152. The support portion 155 is arranged in the inner hole of the shaft 123.

The energizing unit 156 is electrically connected to the heater 154 via a power supply line 154L. The power supply line 154L communicates between the heater 154 and the current supply unit 156 via the inner hole of the shaft 123. The support portion 155 may have a hollow cylindrical shape, and the power supply line 154L may pass through the inner hole of the support portion 155. Alternatively, the support portion 155 may have a column shape, and the power supply line 154L may be buried in the support portion 155.

The current supply unit 156 supplies current to the heater 154 . When heater 154 is a resistor, heater 154 heats by thermal resistance. When the energizing unit 156 energizes the heater 154, the temperature of the upper surface 150a of the heating member 150 rises above room temperature. For example, the temperature of the upper surface 150a of the heating member 150 is uniform within the surface. In this way, the heating member 150 heats the substrate W.

The substrate processing apparatus 100 further includes a cup 180 and a lifting unit 182. The cup 180 collects liquid scattered from the substrate W. The lifting unit 182 lifts and lowers the cup 180. The cup 180 is lifted vertically upward to the side of the substrate W by the lifting unit 182. In this case, the cup 180 collects the processing liquid scattered from the substrate W due to the rotation of the substrate W. Further, the cup 180 is lowered vertically downward from the side of the substrate W by the lifting unit 182.

As described above, the control device 101 includes the control section 102 and the storage section 104. The control unit 102 controls the substrate holding unit 120, the chemical supply unit 132, the rinsing liquid supply unit 134, the organic solvent supply unit 136, the heating member 150, and/or the cup 180. In one example, the control unit 102 controls the electric motor 124, the valves 132b, 134b, 136b, 140b, the energization unit 156, and/or the lifting unit 182.

The substrate processing apparatus 100 of this embodiment is suitably used for processing a semiconductor substrate provided with a semiconductor. Typically, a semiconductor substrate has a conductive layer and an insulating layer laminated on a base material. The substrate processing apparatus 100 is suitably used for cleaning and/or processing (for example, etching, changing characteristics, etc.) a conductive layer and/or an insulating layer during the manufacture of a semiconductor substrate.

The substrate processing apparatus 100 of this embodiment is suitably used when wet etching a substrate W. When the substrate W is wet-etched, the material of the substrate W is partially dissolved, so that the dissolved components may adhere to the inside of the substrate processing apparatus 100. In this case, if the deposits adhere to the substrate W, the characteristics of the substrate W will deteriorate. However, according to the present embodiment, the heating member 150 of the substrate processing apparatus 100 can be suitably cleaned, and adverse effects on the substrate W processed by the substrate processing apparatus 100 can be suppressed.

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to FIGS. 1 to 3. FIG. 3 is a block diagram of the substrate processing apparatus 100.

As shown in FIG. 3, the control device 101 controls various operations of the substrate processing apparatus 100. The control device 101 controls the indexer robot IR, the center robot CR, the substrate holding section 120, the processing liquid supply section 130, the gas supply section 140, the energization unit 156, and the lifting unit 182. Specifically, the control device 101 transmits control signals to the indexer robot IR, center robot CR, substrate holding section 120, processing liquid supply section 130, gas supply section 140, energization unit 156, and lifting unit 182. This controls the indexer robot IR, center robot CR, substrate holding section 120, processing liquid supply section 130, gas supply section 140, and lifting unit 182.

Specifically, the control unit 102 controls the indexer robot IR, and transfers the substrate W by the indexer robot IR.

The control unit 102 controls the center robot CR and delivers the substrate W by the center robot CR. For example, the central robot CR receives an unprocessed substrate W and carries the substrate W into one of the plurality of chambers 110. Moreover, the center robot CR receives the processed substrate W from the chamber 110 and carries out the substrate W.

The control unit 102 can separately control the valves 132b, 134b, and 136b of the processing liquid supply unit 130 to switch the states of the valves 132b, 134b, and 136b between an open state and a closed state. Specifically, the control unit 102 controls the valves 132b, 134b, and 136b of the processing liquid supply unit 130 to open the valves 132b, 134b, and 136b, thereby directing the flow toward the nozzles 132n, 134n, and 136n. A chemical solution, a rinsing liquid, and an organic solvent can be passed through the pipes 132a, 134a, and 136a. Further, the control unit 102 controls the valves 132b, 134b, and 136b of the processing liquid supply unit 130 to close the valves 132b, 134b, and 136b, so that the pipes 132a, The supply of the chemical solution, the rinsing solution, and the organic solvent flowing through the interiors of 134a and 136a can be stopped.

The control unit 102 can control the valve 140b of the gas supply unit 140 to switch the state of the valve 140b between an open state and a closed state. Specifically, the control unit 102 controls the valve 140b of the gas supply unit 140 to open the valve 140b, thereby allowing the gas flowing in the pipe 140a toward the nozzle 140n to pass. Further, the control unit 102 can stop the supply of gas flowing in the pipe 140a toward the nozzle 140n by controlling the valve 140b of the gas supply unit 140 and closing the valve 140b.

The control unit 102 can control the heating of the heating member 150 by controlling the energization unit 156. Specifically, the control unit 102 can start heating the heating member 150 by controlling the current supply unit 156 to supply current to the heater 154 of the heating member 150. On the other hand, the control unit 102 can stop heating the heating member 150 by controlling the current supply unit 156 to stop supplying current to the heater 154 of the heating member 150.

The control unit 102 can move the cup 180 by controlling the lifting unit 182. Specifically, the control unit 102 can move the position of the cup 180 to the side of the substrate holding unit 120 by controlling the lifting unit 182 to raise the cup 180 in the vertical direction. On the other hand, the control unit 102 can move the cup 180 to the retracted position by controlling the lifting unit 182 to lower the cup 180 in the vertical direction.

Next, a cleaning process for the heating member 150 according to this embodiment will be described with reference to FIGS. 1 to 4. FIGS. 4(a) to 4(f) are schematic diagrams for explaining the cleaning process of the heating member 150. FIG. Note that the heating member 150 may be cleaned before the substrate W is processed. Alternatively, the heating member 150 may be cleaned after the substrate W is processed.

As shown in FIG. 4A, the substrate W is not placed above the heating member 150. The heating member 150 is used to heat the substrate W when processing the substrate W. Therefore, although the substrate W can be placed above the heating member 150, the substrate W is not placed above the heating member 150 here.

As shown in FIG. 4B, the rinsing liquid supply section 134 supplies the rinsing liquid R to the upper surface 150a of the heating member 150. For example, the rinsing liquid supply unit 134 supplies the rinsing liquid R to the vicinity of the center 150d of the upper surface 150a of the heating member 150. In one example, the nozzle 134n of the rinsing liquid supply unit 134 moves relative to the heating member 150 so as to straddle the center 150d of the upper surface 150a of the heating member 150 while discharging the rinsing liquid R. Alternatively, the rinsing liquid supply section 134 supplies the rinsing liquid R to the outer circumference of the upper surface 150a of the heating member 150. Note that the rinsing liquid supply section 134 is used for processing the substrate W, but here it is used for cleaning the heating member 150.

As shown in FIG. 4(c), the chemical liquid supply unit 132 selectively supplies the chemical liquid Cs to the outer circumference of the upper surface 150a of the heating member 150. For example, the chemical liquid supply unit 132 selectively supplies the chemical liquid Cs to a position on the upper surface 150a of the heating member 150 outside an intermediate position between the center 150d and the end. As a result, the chemical solution Cs mixes with the rinsing liquid R on the upper surface 150a of the heating member 150 and diffuses within the rinsing liquid R. Note that the chemical solution supply section 132 is used for processing the substrate W, but here it is used for cleaning the heating member 150. Note that the chemical solution Cs is discharged from the nozzle 132n of the chemical solution supply section 132 toward a position away from the center of the upper surface 150a of the heating member 150.

Note that, before the chemical solution Cs is supplied, the rinsing liquid R is located on the outside of the intermediate position between the center 150d and the end of the upper surface 150a of the heating member 150. For example, the rinse liquid R is located on the outer periphery of the upper surface 150a of the heating member 150. The rinsing liquid R may be moved on the upper surface 150a of the heating member 150 by being supplied with the gas from the gas supply unit 140, and may be located on the outer periphery of the upper surface 150a of the heating member 150. Alternatively, the nozzle 134n of the rinsing liquid supply section 134 may be moved so as to discharge the rinsing liquid R onto the outer periphery of the upper surface 150a of the heating member 150.

The rinsing liquid R is formed into a ring shape on the outer periphery of the upper surface 150a of the heating member 150. Note that in FIG. 4(c), before supplying the chemical solution Cs, the rinsing liquid R does not cover the center 150d of the upper surface 150a of the heating member 150; May be covered.

As shown in FIG. 4(d), the chemical solution Cs is formed in a ring shape on the outer periphery of the upper surface 150a of the heating member 150. The chemical solution Cs is arranged in a ring shape in a region between the center 150d of the heating member 150 and the end of the upper surface 150a without covering the center 150d of the upper surface 150a of the heating member 150.

As shown in FIG. 4(e), on the upper surface 150a of the heating member 150, the chemical solution Cs is moved toward the end of the upper surface 150a. In this case, the chemical solution Cs moves so that the ring of the chemical solution Cs spreads on the upper surface 150a of the heating member 150. As the chemical solution Cs moves, the upper surface 150a of the heating member 150 is cleaned. For example, the chemical solution Cs may be moved by gas. Alternatively, the chemical solution Cs may be moved by centrifugal force caused by the rotation of the heating member 150.

Thereafter, as shown in FIG. 4(f), the chemical solution Cs is discharged to the outside from the upper surface 150a of the heating member 150. As described above, the upper surface 150a of the heating member 150 can be cleaned using the chemical solution Cs.

For example, when processing the substrate W, any of the chemical solution, rinsing liquid, and organic solvent used to process the substrate W may drip from the substrate W and adhere to the heating member. When these treatment liquids adhere to the heating member, impurities adhere to the outer periphery of the upper surface of the heating member. In particular, when using an etching solution for etching the substrate W as a chemical solution, components removed from the substrate W by the etching process adhere to the outer circumference of the upper surface of the heating member, forming deposits on the outer circumference of the upper surface of the heating member. easy to be Furthermore, since the heating member is subject to temperature changes, deposits may solidify. Thereafter, during processing of the substrate W, if components of the deposits on the heating member adhere to the substrate W from the heating member, the characteristics of the substrate W will change. For example, the deposit may include metal. As an example, the metal includes any one of titanium (Ti), cobalt (Co), tungsten (W), and gallium (Ga).

According to the substrate processing apparatus 100 of this embodiment, the outer periphery of the upper surface 150a of the heating member 150 can be efficiently cleaned by the chemical liquid selectively supplied to the outer periphery of the upper surface 150a of the heating member 150. Therefore, it is possible to suppress the components of the deposits of the heating member 150 from adhering to the substrate W and deteriorating the characteristics of the substrate W.

Note that it is preferable to use different chemical solutions depending on the type of metal contained in the deposit. When the deposit includes titanium (Ti), typically the deposit includes titanium oxide and/or titanium nitride. In this case, it is preferable to use hydrofluoric acid as the chemical solution. Alternatively, it is preferable to use hydrofluoric acid and hydrogen peroxide solution as the chemical solution. In particular, it is preferable to alternately use hydrofluoric acid and hydrogen peroxide solution as the chemical solution. The hydrogen peroxide solution can oxidize the metal deposits. Further, oxides can be removed using hydrofluoric acid.

When the deposit contains cobalt (Co), it is preferable to use SC2 (a mixture of hydrochloric acid and hydrogen peroxide) as the chemical solution. Further, when the deposit contains tungsten (W), it is preferable to use SC1 (ammonia hydrogen peroxide solution mixture) as the chemical solution. Alternatively, even if the deposit contains tungsten (W), SC2 may be used as the chemical. Further, when the deposit contains gallium (Ga), aqua regia (a mixture of concentrated hydrochloric acid and concentrated nitric acid) may be used as the chemical solution.

Note that the deposit does not need to contain metal. For example, the deposit may be etching residue. Alternatively, the deposit may be silicon residue. Alternatively, the deposit may be a residue of the polymer after dry etching.

The chemical solution supply section 132 may be movable only in one direction. For example, the nozzle 132n of the chemical liquid supply unit 132 may be movable along the X direction, and the chemical liquid supply unit 132 may be movable on a straight line passing through the center 150d of the substrate W. Further, the chemical liquid may be formed into a ring shape on the upper surface 150a of the heating member 150 using the rinsing liquid and the gas.

Next, a cleaning process for the heating member 150 according to this embodiment will be described with reference to FIGS. 1 to 5. 5(a) to 5(e) are schematic diagrams for explaining the cleaning process of the heating member 150. FIG.

As shown in FIG. 5(a), the rinsing liquid R is supplied to the heating member 150. Specifically, the rinsing liquid supply unit 134 supplies the rinsing liquid R to the center of the upper surface 150a of the heating member 150. The rinsing liquid R covers the center 150d of the upper surface 150a of the heating member 150. Note that the rinsing liquid supply section 134 is used for processing the substrate W, but here it is used for cleaning the heating member 150.

As shown in FIG. 5(b), the gas supply unit 140 supplies the gas G to the vicinity of the center of the upper surface 150a of the heating member 150. The gas G from the gas supply section 140 causes the rinsing liquid R to spread from the center to the periphery of the upper surface 150a of the heating member 150. Here, the rinsing liquid R is formed into a ring shape without covering the center 150d of the upper surface 150a of the heating member 150.

As shown in FIG. 5(c), the chemical solution Cs is selectively supplied to the outer peripheral portion of the upper surface 150a of the heating member 150. Specifically, the chemical solution supply unit 132 supplies the chemical solution Cs toward the rinsing liquid R on the upper surface 150a of the heating member 150. Here, the chemical liquid supply unit 132 discharges the chemical liquid Cs to the first position on the upper surface 150a of the heating member 150. The chemical solution Cs mixes with the rinsing liquid R and moves together with the rinsing liquid R so as to spread along the ring shape. Note that since the rinsing liquid R has been previously discharged onto the upper surface 150a of the heating member 150, the chemical liquid Cs diffuses into the rinsing liquid R on the upper surface 150a of the heating member 150 to form a mixed liquid, while the chemical liquid Cs , the rinsing liquid R hardly diffuses into the region of the upper surface 150a of the heating member 150 where the rinsing liquid R is not present.

As shown in FIG. 5(d), the chemical solution Cs is selectively supplied to the outer periphery of the upper surface 150a of the heating member 150. Specifically, the chemical solution supply unit 132 supplies the chemical solution Cs toward a position on the upper surface 150a of the heating member 150 where the rinsing liquid R is located. Here, the nozzle 132n of the chemical liquid supply unit 132 discharges the chemical liquid Cs after moving from the first position to the second position along the X direction. The chemical liquid Cs moves so as to spread along the ring-shaped mixture of the rinsing liquid R and the chemical liquid Cs.

As shown in FIG. 5E, the gas supply unit 140 supplies gas G to the upper surface 150a of the heating member 150. The gas supply unit 140 supplies gas G to the vicinity of the center of the upper surface 150a of the heating member 150. Due to the gas G supplied from the gas supply unit 140, the mixed liquid of the rinsing liquid R and the chemical liquid Cs moves to the end of the upper surface 150a of the heating member 150 and is discharged from the end of the upper surface 150a of the heating member 150 to the outside. Ru. As described above, the upper surface 150a of the heating member 150 can be cleaned using the chemical solution Cs.

In addition, in the above description, in FIG. 5(b), the gas G was supplied to form the rinsing liquid R in a ring shape, but the present embodiment is not limited to this. In FIG. 5(b), the rinsing liquid R does not have to be formed into a ring shape. Further, in the above description, in FIG. 5C, the mixed liquid of the rinse liquid R and the chemical liquid Cs was formed in a ring shape by discharging the chemical liquid Cs, but the present embodiment is not limited to this. In FIG. 5(c), the mixed liquid of the rinse liquid R and the chemical liquid Cs does not have to be formed into a ring shape. However, as shown in FIG. 5(d), it is preferable that the mixed liquid of the rinsing liquid R and the chemical liquid Cs be formed into a ring shape before the gas G for discharge is supplied. Thereby, the chemical solution Cs can efficiently clean the outer peripheral portion of the upper surface 150a of the heating member 150.

In the above description with reference to FIG. 5, the chemical solution supply section 132 moved relative to the substrate W along the X direction, but the chemical solution supply section 132 moved relative to the substrate W along the X direction and the Y direction. It may also be movable. In this case, the chemical liquid supply unit 132 may supply the chemical liquid along the ring-shaped rinse liquid R.

Further, in the above description with reference to FIG. 5, the chemical solution supply unit 132 supplies the chemical solution Cs to two positions on the upper surface 150a of the heating member 150, but the present embodiment is not limited thereto. The chemical liquid supply unit 132 may supply the chemical liquid Cs to one position on the upper surface 150a of the heating member 150. Alternatively, the chemical solution supply unit 132 may supply the chemical solution Cs to three or more positions with respect to the rinse liquid R.

As described above, when processing the substrate W, deposits may adhere to the heating member 150. For this reason, the heating member 150 may be cleaned after processing the substrate W.

Next, a substrate processing method using the substrate processing apparatus of this embodiment will be described with reference to FIGS. 1 to 6. FIG. 6 is a flow diagram for explaining a substrate processing method using the substrate processing apparatus of this embodiment.

As shown in step Sa1, the substrate W is carried into the chamber 110. For example, the central robot CR carries an unprocessed substrate W into the chamber 110. The substrate holding unit 120 holds the loaded substrate W. Typically, the substrate W has a fine pattern formed on the surface of a silicon wafer. Next, the process proceeds to step Sa2.

As shown in step Sa2, the substrate W is treated with a chemical solution. The chemical liquid supply unit 132 supplies a chemical liquid to the substrate W. The chemical liquid supply unit 132 opens the valve 132b and discharges the chemical liquid from the nozzle 132n. At this time, the substrate holder 120 rotates the substrate W. The chemical solution supplied near the center of the upper surface Wa of the substrate W receives centrifugal force due to the rotation of the substrate W and flows over the upper surface Wa of the substrate W toward the peripheral edge of the substrate W. As a result, the chemical solution spreads over the entire upper surface Wa of the substrate W, and the upper surface Wa of the substrate W is treated with the chemical solution.

In this case, the cup 180 has been raised until it is located on the side of the substrate W, and collects the chemical liquid scattered from the substrate W. After that, the chemical liquid supply unit 132 stops supplying the chemical liquid. Next, the process proceeds to step Sa3.

As shown in step Sa3, the substrate W is rinsed with a rinsing liquid. The rinse liquid supply unit 134 supplies a rinse liquid to the substrate W. The rinsing liquid supply unit 134 opens the valve 134b and discharges the rinsing liquid from the nozzle 134n. At this time, the substrate holder 120 holds the substrate W and rotates. The rinsing liquid supplied near the center of the upper surface Wa of the substrate W receives centrifugal force due to the rotation of the substrate W, and flows over the upper surface Wa of the substrate W toward the peripheral edge of the substrate W. As a result, the rinsing liquid spreads over the entire upper surface Wa of the substrate W, and the upper surface Wa of the substrate W is rinsed with the rinsing liquid. After that, the rinse liquid supply unit 134 stops supplying the rinse liquid. Next, the process proceeds to step Sa4.

As shown in step Sa4, the substrate W is treated with an organic solvent. The organic solvent supply unit 136 supplies the substrate W with an organic solvent. The organic solvent supply unit 136 opens the valve 136b and discharges the organic solvent from the nozzle 136n. At this time, the substrate holder 120 holds the substrate W and rotates. The organic solvent supplied near the center of the upper surface Wa of the substrate W receives centrifugal force due to the rotation of the substrate W and flows over the upper surface Wa of the substrate W toward the peripheral edge of the substrate W. As a result, the organic solvent spreads over the entire upper surface Wa of the substrate W, and the rinsing liquid on the upper surface Wa of the substrate W is replaced with the organic solvent. After that, the organic solvent supply unit 136 stops supplying the organic solvent. Next, the process proceeds to step Sa5.

As shown in step Sa5, the heating member 150 heats the substrate W. The back surface Wb of the substrate W is heated by thermal radiation from the heating member 150 or by fluid thermal conduction in the space between the back surface Wb of the substrate W and the upper surface 150a of the heating member 150. The heating member 150 is arranged so that the upper surface 150a of the heating member 150 and the back surface Wb of the substrate W are parallel to each other. Therefore, the amount of heat per unit area given to the substrate W from the heating member 150 is substantially uniform over the entire area of the substrate W. At this time, the rotation of the substrate W is stopped or the substrate W is rotated at a low speed.

By heating the back surface Wb of the substrate W by the heating member 150, the temperature of the entire upper surface Wa of the substrate W increases to a predetermined upper surface temperature during heating. The upper surface temperature during heating is a predetermined temperature in the range of 10 to 50° C. higher than the boiling point of the organic solvent. The amount of heat per unit area of the heating member 150 and the distance between the back surface Wb of the substrate W and the upper surface 150a of the heating member 150 are set to a predetermined size so that the entire surface of the upper surface Wa of the substrate W rises to the upper surface temperature during this heating. is set to .

As shown in step Sa6, the organic solvent is removed. First, when the temperature of the upper surface Wa of the substrate W reaches the upper surface temperature during heating and a predetermined period of time has elapsed, a part of the organic solvent on the upper surface Wa of the substrate W evaporates and vaporizes into the space above the upper surface Wa of the substrate W. A vapor film is formed. As a result, the organic solvent floats up from the upper surface Wa of the substrate W.

Thereafter, the substrate W is rotated at a low speed, and gas is supplied to the upper surface Wa of the substrate W. For example, the substrate holding section 120 rotates the substrate W at a rotation speed of 10 rpm to 500 rpm, and the valve 140b of the gas supply section 140 is opened. As a result, the organic solvent at the center of the upper surface Wa of the substrate W is pushed out and partially removed, forming a small-diameter circular dry region.

The organic solvent is separated from the upper surface Wa of the substrate W via the vapor film, and is in a state where it is easy to move along the upper surface Wa of the substrate W. Therefore, as the substrate W rotates and gas is supplied, the drying area expands outward from the center of the upper surface Wa of the substrate W. By spreading the dry region over the entire upper surface Wa of the substrate W, the organic solvent can be removed from the upper surface Wa of the substrate W while maintaining its liquid mass state. Next, the process proceeds to step Sa7.

As shown in step Sa7, the substrate W is dried. For example, the substrate holder 120 rotates the substrate W at high speed. For example, the rotation speed of the substrate W is increased to 2500 rpm. Thereby, the organic solvent is shaken off from the upper surface Wa of the substrate W, and the substrate W can be dried. Next, the process proceeds to step Sa8.

As shown in step Sa8, the substrate W is carried out from the chamber 110. For example, the central robot CR carries out the processed substrate W in the chamber 110. As described above, the substrate W can be processed through steps Sa1 to Sa8. In FIG. 6, the substrate processing step Sa includes steps Sa1 to Sa8. Here, after the substrate processing step Sa, the process proceeds to step S12.

As shown in step S12, a rinsing liquid is supplied to the heating member 150. For example, the rinsing liquid supply unit 134 supplies a rinsing liquid to the upper surface 150a of the heating member 150. Typically, the rinsing liquid supply section 134 supplies the rinsing liquid to the center of the upper surface 150a of the heating member 150. Next, the process proceeds to step S14.

As shown in step S14, the gas supply unit 140 supplies gas to the heating member 150. For example, the gas supply unit 140 supplies gas to the center of the upper surface 150a of the heating member 150. The gas is, for example, an inert gas. In one example, the gas includes nitrogen gas. By supplying the gas, the rinsing liquid spreads in a ring shape on the upper surface 150a of the heating member 150. At this time, it is preferable that the cup 180 be placed at a position covering the sides of the heating member 150. Next, the process proceeds to step S16.

As shown in step S16, a chemical solution is supplied to the heating member 150. For example, the chemical liquid supply unit 132 supplies a chemical liquid toward the rinsing liquid on the upper surface 150a of the heating member 150. Thereby, the chemical solution mixes with the rinsing liquid on the upper surface 150a of the heating member 150 and diffuses within the ring-shaped rinsing liquid. Next, the process proceeds to step S18.

As shown in step S18, the gas supply unit 140 supplies gas to the heating member 150. For example, the gas supply unit 140 supplies gas to the center of the upper surface 150a of the heating member 150. As a result, the rinsing liquid and the chemical liquid on the upper surface 150a of the heating member 150 are discharged. It is preferable that the cup 180 is placed in a position to cover the sides of the heating member 150.

The heating member 150 is cleaned in steps S12 to S18. In FIG. 6, the cleaning process Sp includes steps S12 to S18. As described above, the heating member 150 can be cleaned while processing the substrate W. According to this embodiment, even if deposits adhere to the heating member 150 in the substrate processing step Sa, the heating member 150 can be quickly cleaned in the cleaning step Sp.

Note that in the above description with reference to FIG. 6, the cleaning treatment of the upper surface 150a of the heating member 150 was performed after processing one substrate W, but the present embodiment is not limited to this. After the processing of a predetermined number of substrates W is completed, the heating member 150 may be cleaned. For example, the cleaning process for the heating member 150 may be performed every time 10 substrates W are processed. Alternatively, the cleaning process for the heating member 150 may be performed after the processed substrate W is discharged after a predetermined period of time has elapsed since the processing of the substrate W was started. For example, the cleaning process for the heating member 150 may be started after the processed substrate W is discharged after 5 hours have elapsed from the start of processing the substrate W.

Alternatively, if a predetermined period of time has elapsed during which the drive of the substrate processing apparatus 100 was stopped, the heating member 150 may be cleaned when starting the drive of the substrate processing apparatus 100 next. Alternatively, immediately before driving of the substrate processing apparatus 100 is stopped, the heating member 150 may be cleaned after the substrate W is unloaded.

Note that in the above description with reference to FIG. 6, the heating member 150 performs the cleaning process after processing the substrate W, but the present embodiment is not limited to this. The heating member 150 may be cleaned before processing the substrate W. In particular, if the substrate processing apparatus 100 is not driven for a predetermined period of time, the heating member 150 is preferably cleaned before processing the substrate W.

Further, in the above description with reference to FIGS. 1 to 6, the nozzles 132n, 134n, 136n, and 140n are provided separately, but the present embodiment is not limited thereto. At least some of the nozzles 132n, 134n, 136n, and 140n may be integrated. Further, in the above description with reference to FIGS. 1 to 6, the liquid and gas were supplied only to the upper surface Wa of the substrate W, but the present embodiment is not limited to this. At least one of a liquid and a gas may be supplied to the back surface Wb of the substrate W.

Next, with reference to FIG. 7, the substrate processing apparatus 100 of this embodiment will be described. FIG. 7 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. In the substrate processing apparatus 100 shown in FIG. 7, the nozzle 132n and the nozzle 134n are movable together, the nozzle 136n and the nozzle 140n are integrated, and the heating member 150 is movable up and down with respect to the substrate W. It has the same configuration as the substrate processing apparatus 100 described above with reference to FIG. 1, except for certain points and the point that gas is supplied to the back surface Wb of the substrate W, and is duplicated to avoid redundancy. Description is omitted.

The substrate processing apparatus 100 of this embodiment further includes an arm member A1 to which a nozzle 132n of the chemical solution supply section 132 and a nozzle 134n of the rinse liquid supply section 134 are attached. A moving unit Ta is attached to the arm member A1. The moving unit Ta moves the arm member A1.

The moving unit Ta moves the arm member A1 between the discharge position and the retreat position. When the arm member A1 is in the discharge position, the arm member A1 is located above the substrate W. When the arm member A1 is in the discharge position, the arm member A1 discharges the chemical solution and the rinsing liquid toward the upper surface Wa of the substrate W. When the arm member A1 is in the retracted position, the arm member A1 is located on the outer side of the substrate W in the radial direction than the substrate W.

The substrate processing apparatus 100 further includes a nozzle N1 in which a nozzle 136n of the organic solvent supply section 136 and a nozzle 140n of the gas supply section 140 are integrated. A moving unit Tn is attached to the nozzle N1. The moving unit Tn moves the nozzle N1.

The moving unit Tn moves the nozzle N1 between the ejection position and the retreat position. When the nozzle N1 is in the discharge position, the nozzle N1 is located above the substrate W. When the nozzle N1 is in the discharge position, the nozzle N1 discharges the organic solvent and gas toward the upper surface Wa of the substrate W. When the nozzle N1 is in the retracted position, the nozzle N1 is located on the outer side of the substrate W in the radial direction of the substrate W.

Further, the substrate processing apparatus 100 shown in FIG. 7 further includes a gas supply section 140A. The gas supply unit 140A supplies gas to the substrate W. For example, the gas supply unit 140A supplies gas to the back surface Wb of the substrate W. The gas supplied from the gas supply section 140A is, for example, an inert gas. In one example, the gas includes nitrogen gas.

The gas supply section 140A includes a pipe 140c, a valve 140d, and a nozzle 140m. Valve 140d is arranged in piping 140c. Piping 140c guides gas into chamber 110. The valve 140d opens and closes the pipe 140c.

Piping 140c passes through the inner hole of shaft 123 and heating member 150. For example, the pipe 140c may pass through an inner hole of the support portion 155. Typically, the pipe 140c passes through the center of the upper surface 150a of the heating member 150. Therefore, the nozzle 140m is located at the center of the upper surface 150a of the heating member 150. Gas is supplied from the center of the upper surface 150a of the heating member 150 toward the back surface Wb of the substrate W.

Further, the substrate processing apparatus 100 further includes a lifting unit 158 that lifts and lowers the heating member 150. The elevating unit 158 moves the heating member 150 vertically relative to the substrate holder 120. When the heating member 150 heats the substrate W, the elevating unit 158 raises the heating member 150 so that the heating member 150 approaches the substrate W.

For example, the lifting unit 158 can raise the heating member 150 to a position where the heating member 150 is close to the substrate W (near position). Furthermore, the elevating unit 158 can lower the heating member 150 to a position where the heating member 150 is farther from the substrate W than the raised position (separated position).

When the heating member 150 rises to the close position, the upper surface 150a of the heating member 150 approaches the back surface Wb of the substrate W by a specific distance (typically 0.5 to 3 mm). When the heating member 150 reaches the close position, the back surface Wb of the substrate W is heated by thermal radiation from the heating member 150 or fluid heat conduction in the space between the back surface Wb of the substrate W and the upper surface 150a of the heating member 150. be done. It is preferable that the heating member 150 is arranged so that the upper surface 150a of the heating member 150 and the back surface Wb of the substrate W are parallel to each other at a close position.

Note that here, although the heating member 150 is raised to a position where the heating member 150 is close to the substrate W, the heating member 150 may be raised to a position where the heating member 150 contacts the substrate W.

In the substrate processing apparatus 100 of this embodiment, the nozzle 132n and the nozzle 134n are attached to the arm member A1. Since the chemical solution and the rinsing solution are often used continuously, the time required to move the nozzle can be shortened. Further, the substrate processing apparatus 100 is provided with a nozzle N1 in which a nozzle 136n and a nozzle 140n are integrated. Since the organic solvent and gas are often used continuously, the time required to move the nozzle can be shortened.

In the substrate processing apparatus 100 of this embodiment, gas can be supplied to the back surface Wb of the substrate W by the gas supply section 140A. Therefore, it is possible to suppress deposits from adhering to the back surface Wb of the substrate W and/or the heating member 150.

Furthermore, in the substrate processing apparatus 100 of this embodiment, the lifting unit 158 can shorten the distance between the heating member 150 and the substrate W. Therefore, the heating member 150 can efficiently heat the substrate W with less electric power.

Note that in the above description with reference to FIGS. 1 to 7, the chemical liquid supply section 132 supplies one type of chemical liquid, but the present embodiment is not limited thereto. The chemical liquid supply unit 132 may separately supply a plurality of chemical liquids.

Next, with reference to FIG. 8, the substrate processing apparatus 100 of this embodiment will be described. FIG. 8 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 shown in FIG. 8 is similar to the substrate processing apparatus 100 described above with reference to FIG. 1, except that the chemical supply section 132 includes a first chemical supply section 132A and a second chemical supply section 132B. It has the following structure, and duplicate descriptions will be omitted to avoid redundancy.

In the substrate processing apparatus 100 of this embodiment, the chemical liquid supply section 132 includes a first chemical liquid supply section 132A and a second chemical liquid supply section 132B. The first chemical liquid supply section 132A supplies the first chemical liquid. The second chemical liquid supply unit 132B supplies a second chemical liquid different from the first chemical liquid.

The first chemical liquid supply section 132A includes a pipe 132c, a valve 132d, and a nozzle 132p. The nozzle 132p discharges a chemical onto the upper surface Wa of the substrate W. Nozzle 132p is connected to piping 132c. The first chemical solution is supplied to the pipe 132c from a supply source. The valve 132d opens and closes the flow path within the pipe 132c.

The second chemical liquid supply section 132B includes a pipe 132e, a valve 132f, and a nozzle 132q. The nozzle 132q discharges a chemical onto the upper surface Wa of the substrate W. Nozzle 132q is connected to piping 132e. The second chemical solution is supplied to the pipe 132e from a supply source. The valve 132f opens and closes the flow path within the pipe 132e.

Here, the nozzle 132p and the nozzle 132q are attached to the arm member A1 together with the nozzle 134n. Arm member A1 is movable by moving unit Ta.

The first chemical liquid supply section 132A and the second chemical liquid supply section 132B are suitably used for cleaning the heating member 150. For example, one of the first chemical liquid and the second chemical liquid is a liquid that changes the composition of the deposit, and the other of the first chemical liquid and the second chemical liquid is a liquid that removes the deposit whose composition has changed. For example, when the deposit contains titanium (Ti), hydrogen peroxide may be used as the first chemical solution, and hydrofluoric acid may be used as the second chemical solution. In this case, the first chemical liquid and the second chemical liquid may not be ejected at the same time, but may be ejected at different timings.

However, the first chemical liquid and the second chemical liquid may be discharged at the same time. For example, when the deposit contains cobalt (Co), hydrogen peroxide may be used as the first chemical solution, and hydrochloric acid may be used as the second chemical solution. Furthermore, even when the deposit contains tungsten (W), hydrogen peroxide may be used as the first chemical solution, and hydrochloric acid may be used as the second chemical solution. Alternatively, when the deposit contains tungsten (W), hydrogen peroxide solution may be used as the first chemical solution, and ammonia water may be used as the second chemical solution. Furthermore, if the deposit contains gallium (Ga), concentrated hydrochloric acid may be used as the first chemical solution, and concentrated nitric acid may be used as the second chemical solution.

In addition, when each of the first chemical liquid and the second chemical liquid individually has different effects on the deposit, it is preferable that the first chemical liquid and the second chemical liquid are supplied at different timings.

Next, a method for cleaning the heating member 150 of this embodiment will be described with reference to FIGS. 8 and 9. FIG. 9 is a flow diagram for explaining a method of cleaning the heating member 150.

As shown in step S42, a rinsing liquid is supplied to the heating member 150. For example, the rinsing liquid supply unit 134 supplies a rinsing liquid to the upper surface 150a of the heating member 150. Typically, the rinsing liquid supply section 134 supplies the rinsing liquid to the center of the upper surface 150a of the heating member 150. Next, the process proceeds to step S44.

As shown in step S44, the gas supply section 140 supplies gas to the heating member 150. For example, the gas supply unit 140 supplies gas to the center of the upper surface 150a of the heating member 150. By supplying the gas, the rinsing liquid spreads in a ring shape on the upper surface 150a of the heating member 150. At this time, it is preferable that the cup 180 be placed at a position covering the sides of the heating member 150. Next, the process proceeds to step S46.

As shown in step S46, the first chemical solution is supplied to the first position of the heating member 150. The first chemical solution contains hydrogen peroxide. For example, the first chemical liquid supply unit 132A supplies the first chemical liquid toward the rinsing liquid on the upper surface 150a of the heating member 150. Thereby, the first chemical solution mixes with the rinsing liquid on the upper surface 150a of the heating member 150 and diffuses within the ring-shaped rinsing liquid. Next, the process proceeds to step S48.

As shown in step S48, the first chemical solution is supplied to the second position of the heating member 150. For example, the first chemical liquid supply unit 132A supplies the first chemical liquid toward the rinsing liquid on the upper surface 150a of the heating member 150. Thereby, the first chemical solution mixes with the rinsing liquid on the upper surface 150a of the heating member 150 and diffuses within the ring-shaped rinsing liquid. Next, the process proceeds to step S50.

As shown in step S50, the gas supply section 140 supplies gas to the heating member 150. For example, the gas supply unit 140 supplies gas to the center of the upper surface 150a of the heating member 150. As a result, the rinsing liquid and the first chemical liquid on the upper surface 150a of the heating member 150 are discharged. Next, the process proceeds to step S52.

As shown in step S52, a rinsing liquid is supplied to the heating member 150. For example, the rinsing liquid supply unit 134 supplies a rinsing liquid to the upper surface 150a of the heating member 150. Typically, the rinsing liquid supply section 134 supplies the rinsing liquid to the center of the upper surface 150a of the heating member 150. Next, the process proceeds to step S54.

As shown in step S54, the gas supply unit 140 supplies gas to the heating member 150. For example, the gas supply unit 140 supplies gas to the center of the upper surface 150a of the heating member 150. By supplying the gas, the rinsing liquid spreads in a ring shape on the upper surface 150a of the heating member 150. At this time, it is preferable that the cup 180 be placed at a position covering the sides of the heating member 150. Next, the process proceeds to step S56.

As shown in step S56, the second chemical solution is supplied to the first position of the heating member 150. The second chemical solution contains hydrofluoric acid. For example, the second chemical liquid supply unit 132B supplies the second chemical liquid toward the rinsing liquid on the upper surface 150a of the heating member 150. Thereby, the second chemical solution mixes with the rinsing liquid on the upper surface 150a of the heating member 150 and diffuses within the ring-shaped rinsing liquid. Next, the process proceeds to step S58.

As shown in step S58, the second chemical solution is supplied to the second position of the heating member 150. For example, the second chemical liquid supply unit 132B supplies the second chemical liquid toward the rinsing liquid on the upper surface 150a of the heating member 150. Thereby, the second chemical solution mixes with the rinsing liquid on the upper surface 150a of the heating member 150 and diffuses within the ring-shaped rinsing liquid. Next, the process proceeds to step S60.

As shown in step S60, the gas supply unit 140 supplies gas to the heating member 150. For example, the gas supply unit 140 supplies gas to the center of the upper surface 150a of the heating member 150. As a result, the rinsing liquid and the second chemical liquid on the upper surface 150a of the heating member 150 are discharged. With the above, the upper surface of the heating member 150 can be cleaned.

Note that in the explanation with reference to FIG. 9, the second chemical solution containing hydrofluoric acid was used after the first chemical solution containing hydrogen peroxide solution was used, but the present embodiment is not limited to this. The second chemical solution containing hydrofluoric acid may be used first, and then the first chemical solution containing hydrogen peroxide solution may be used. For example, if metal is exposed on the surface of the impurity, it is preferable to use the second chemical solution containing hydrofluoric acid after using the first chemical solution containing hydrogen peroxide solution. On the other hand, when the metal oxide is exposed on the surface of the impurity, it is preferable to use the first chemical solution containing hydrogen peroxide solution after using the second chemical solution containing hydrofluoric acid.

Next, with reference to FIG. 10, the substrate processing apparatus 100 of this embodiment will be described. FIG. 10 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 shown in FIG. 10 is similar to the substrate processing apparatus 100 described above with reference to FIG. structure, and duplicate descriptions will be omitted to avoid redundancy.

In the substrate processing apparatus 100 of this embodiment, the substrate holder 120 further includes a support shaft 126 and a lift pin 127 connected to the support shaft 126. The support shaft 126 has a cylindrical shape extending in the vertical direction, and the support shaft 126 is arranged in the inner hole of the shaft 123. A support portion 155 is arranged in the inner hole of the support shaft 126 . At least three lift pins 127 extend from the support shaft 126. The lift pin 127 extends radially outward above the support shaft 126, and extends vertically upward at its tip.

The heating member 150 is provided with at least three through holes 150h. The through hole 150h connects the upper surface 150a and the back surface 150b of the heating member 150. The position, size, and number of the through holes 150h correspond to the positions, sizes, and numbers of the lift pins 127, and the through holes 150h are configured to allow the lift pins 127 to pass through.

The substrate processing apparatus 100 of this embodiment further includes a lifting unit 158A that can lift and lower the support shaft 126. When the lifting unit 158A moves the support shaft 126, the lift pin 127 penetrates the heating member 150. When the lifting unit 158A moves down the support shaft 126, the lift pin 127 does not protrude from the upper surface 150a of the heating member 150. On the other hand, when the lifting unit 158A moves up the support shaft 126, the lift pin 127 protrudes from the upper surface 150a of the heating member 150. In this case, the upper end of the lift pin 127 is located vertically above the upper end of the chuck member 122.

The upper end of the lift pin 127 can be located vertically above the upper end of the chuck member 122. Therefore, when the central robot CR carries the substrate W into and/or out of the chamber 110, the central robot CR can transfer the substrate W so that it is supported by the lift pins 127.

The chuck member 122 has a main body portion 122a and a plurality of rotating portions 122b. The main body portion 122a extends vertically upward relative to the spin base 121. The rotating portion 122b is provided at the vertically upper tip of the main body portion 122a. The rotating portion 122b is rotatable in the circumferential direction of the substrate W with respect to the main body portion 122a. Therefore, when the plurality of rotating parts 122b face inward, the substrate W is supported by the rotating parts 122b. Further, when the plurality of rotating parts 122b face outward, the substrate W is not supported by the rotating parts 122b. Therefore, when the lifting unit 158A lowers the lift pins 127 holding the substrate W with the plurality of rotation parts 122b facing outward, the substrate W can be placed on the upper surface 150a of the heating member 150. Thereby, the heat of the heating member 150 can be sufficiently transferred to the substrate W.

Note that in the above description with reference to FIGS. 3 to 10, the heater 154 of the heating member 150 is a resistor, but the present embodiment is not limited to this. The heating member 150 may be irradiated with light during heating.

Next, with reference to FIG. 11, the substrate processing apparatus 100 of this embodiment will be described. FIG. 12 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 shown in FIG. 11 has the same configuration as the substrate processing apparatus 100 described above with reference to FIG. 1, except that the heating member 150 irradiates light during heating. Omit duplicate descriptions to avoid redundancy.

As shown in FIG. 11, the heating member 150 is arranged below the substrate W held by the substrate holding part 120. The heating member 150 has a plurality of lamps 150L, and is provided above the substrate holder 120. When each lamp 150L is turned on, the back surface Wb of the substrate W held by the substrate holder 120 is irradiated with light from the lamp 150L.

Here, the heating member 150 may be, for example, one in which a plurality of straight tube type lamps 150L are provided in parallel. Alternatively, the heating member 150 may include a plurality of light bulb type lamps 150L arranged in an array. Further, as the lamp 150L, for example, a halogen lamp or a xenon flash lamp can be used.

As the heating member 150, it is possible to use various irradiation members that irradiate electromagnetic waves to the substrate W on the substrate holder 120. For example, in addition to the lamp 150L that irradiates light, a far-infrared heater that irradiates far-infrared rays or a microwave heater that irradiates microwaves to the substrate W on the substrate holder 120 may be used.

Note that the substrate processing apparatus 100 may start cleaning processing of the heating member 150 depending on deposits on the upper surface 150a of the heating member 150. For example, the substrate processing apparatus 100 may take an image of the upper surface 150a of the heating member 150 and start the cleaning process for the upper surface 150a of the heating member 150.

Next, with reference to FIG. 12, the substrate processing apparatus 100 of this embodiment will be described. FIG. 12 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 shown in FIG. 12 has the same configuration as the substrate processing apparatus 100 described above with reference to FIG. Omit the description.

The imaging unit 190 is arranged within the chamber 110. The imaging unit 190 images the upper surface 150a of the heating member 150 and generates image data. The control device 101 starts cleaning processing of the heating member 150 according to the imaging result of the imaging unit 190. For example, the control device 101 determines whether or not a deposit is attached to the upper surface 150a of the heating member 150 from the image data generated by the imaging unit 190, and determines whether the deposit is attached to the upper surface 150a of the heating member 150. If so, a cleaning process for the heating member 150 is started.

Next, a substrate processing method using the substrate processing apparatus of this embodiment will be described with reference to FIGS. 12 and 13. FIG. 13 is a flowchart for explaining a substrate processing method using the substrate processing apparatus of this embodiment.

In step Sb1, the imaging unit 190 images the upper surface 150a of the heating member 150. After that, the process proceeds to step Sb2.

In step Sb2, the control unit 102 determines whether to clean the heating member 150 based on the imaging result of the imaging unit 190. For example, the control unit 102 analyzes the image data generated by the imaging unit 190 and determines whether or not there is a deposit attached to the heating member 150. If the color of the upper surface 150a of the heating member 150 shown in the image data is different from the original color of the heating member 150, the control unit 102 determines that the heating member 150 has a deposit. Alternatively, if the shape of the heating member 150 shown in the image data is different from the original shape of the heating member 150, the control unit 102 determines that the heating member 150 has an attached substance.

If it is determined that the heating member 150 is to be cleaned (Yes in step Sb2), the process proceeds to step Sp1. If it is determined that the heating member 150 is not to be cleaned (No in step Sb2), the process proceeds to the substrate processing step Sa.

In step Sp1, the heating member 150 is cleaned. For example, the control unit 102 executes steps S12 to S18 in FIG. 6 to clean the heating member 150. After that, the process proceeds to a substrate processing step Sa.

In the substrate processing step Sa, the substrate W is processed. The control unit 102 executes steps Sa1 to Sa8 in FIG. 6 to process the substrate W. After that, the process proceeds to step Sb3.

In step Sb3, the imaging unit 190 images the upper surface 150a of the heating member 150. After that, the process proceeds to step Sb4.

In step Sb4, the control unit 102 determines whether to clean the heating member 150 based on the imaging result of the imaging unit 190. For example, the control unit 102 analyzes the image data generated by the imaging unit 190 and determines whether or not there is a deposit attached to the heating member 150. If it is determined that the heating member 150 is to be cleaned (Yes in step Sb4), the process proceeds to step Sp2. If it is determined that the heating member 150 is not to be cleaned (No in step Sb4), the process proceeds to step Sb5.

In step Sp2, the heating member 150 is cleaned. For example, the control unit 102 executes steps S12 to S18 in FIG. 6 to clean the heating member 150. After that, the process proceeds to step Sb5.

In step Sb5, the control unit 102 determines whether there is another substrate W to be processed. For example, if it is determined that there is a substrate W to be processed (Yes in step Sb5), the process returns to the substrate processing step Sa. If it is determined that there is no substrate W to be processed (No in step Sb5), the process ends. In the manner described above, substrate processing and heating member 150 cleaning processing can be performed. According to this embodiment, since it is determined whether or not to perform cleaning processing on the heating member 150 based on the result of imaging by the imaging unit 190, the heating member 150 can be cleaned according to necessity.

Note that in the above description with reference to FIGS. 1 to 13, the substrate W rotates while the heating member 150 does not rotate, but the present embodiment is not limited to this. Heating member 150 may rotate.

Next, with reference to FIG. 14, the substrate processing apparatus 100 of this embodiment will be described. FIG. 14 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 shown in FIG. 14 has the same configuration as the substrate processing apparatus 100 described above with reference to FIG. Omit the description.

The substrate processing apparatus 100 further includes an electric motor 159 for rotating the heating member 150. Electric motor 159 is connected to support portion 155 . Heating member 150 is rotated by electric motor 159 . The control unit 102 rotates the heating member 150 by controlling the electric motor 159.

In the substrate processing apparatus 100 of this embodiment, since the heating member 150 is rotatable by the electric motor 159, there is no need to supply gas to the upper surface 150a of the heating member 150 in the cleaning process of the heating member 150. Specifically, by rotating the heating member 150 after supplying the chemical liquid to the outer circumference of the upper surface 150a of the heating member 150, the upper surface 150a of the heating member 150 can be rotated without supplying gas to the upper surface 150a of the heating member 150. The chemical solution can be discharged from.

Note that in the above description with reference to FIGS. 1 to 14, the heating member 150 was cleaned with a chemical solution, but the present embodiment is not limited thereto. The heating member 150 may be cleaned by abrasion in addition to the chemical solution. When the heating member 150 is worn out, it is preferable that the heating member 150 is worn out while being rotated.

Next, with reference to FIG. 15, the substrate processing apparatus 100 of this embodiment will be described. The substrate processing apparatus 100 shown in FIG. 15 has the same configuration as the substrate processing apparatus 100 described above with reference to FIG. 16, except that it further includes a scrubbing member 192. Omit the description.

The substrate processing apparatus 100 further includes a scrubbing member 192. The scrubbing member 192 scrubs the upper surface 150a of the heating member 150 using a chemical solution in the cleaning process. The head of the scrubbing member 192 is made of a soft material such as sponge, nonwoven fabric, polyurethane foam, or abrasive tape. By bringing the scrubbing member 192 into contact with the upper surface 150a of the heating member 150, the scrubbing member 192 can remove deposits from the upper surface 150a of the heating member 150 using a chemical solution.

Preferably, the scrubbing member 192 moves relative to the heating member 150. For example, the scrubbing member 192 may move relative to the upper surface 150a of the heating member 150 along the X direction and/or the Y direction. Alternatively, heating member 150 may rotate while scrubbing member 192 is maintained in contact with upper surface 150a of heating member 150. Furthermore, the scrubbing member 192 may be used not only in the cleaning process of the heating member 150 but also in the processing process of the substrate W.

The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above-described embodiments, and can be implemented in various forms without departing from the spirit thereof. Moreover, various inventions can be formed by appropriately combining the plurality of components disclosed in the above embodiments. For example, some components may be deleted from all the components shown in the embodiments. Furthermore, components of different embodiments may be combined as appropriate. For ease of understanding, the drawing mainly shows each component schematically, and the thickness, length, number, spacing, etc. of each component shown in the diagram may differ from the actual one for convenience of drawing. may be different. Furthermore, the materials, shapes, dimensions, etc. of each component shown in the above embodiments are merely examples, and are not particularly limited, and various changes can be made without substantially departing from the effects of the present invention. be.

INDUSTRIAL APPLICATION This invention is suitably used for cleaning the heating member for heating a board|substrate.

100 Substrate processing apparatus 110 Chamber 120 Substrate holding section 132 Chemical solution supply section 134 Rinse liquid supply section 136 Organic solvent supply section 140 Gas supply section W Substrate

Claims (13)

A method for cleaning a heating member of a substrate processing apparatus, the method comprising:
supplying a rinsing liquid to the upper surface of the heating member;
selectively supplying a chemical solution to an outer peripheral portion of the upper surface of the heating member so as to mix with the rinsing liquid on the upper surface of the heating member;
A method for cleaning a heating member, the method comprising: discharging the chemical solution from the upper surface of the heating member. The heating member cleaning method according to claim 1, further comprising the step of supplying gas to the upper surface of the heating member after supplying the rinsing liquid and before selectively supplying the chemical solution. The heating member cleaning method according to claim 2, wherein in the step of supplying the gas, the gas is supplied to the center of the upper surface of the heating member. 4. The heating member cleaning method according to claim 2, wherein the step of supplying the gas includes a step of forming the rinsing liquid in a ring shape on the outer peripheral portion of the upper surface of the heating member. 5. The method of cleaning a heating member according to claim 1, wherein the step of selectively supplying the chemical solution includes a step of forming the chemical solution in a ring shape on the outer periphery of the upper surface of the heating member. Any one of claims 1 to 5, wherein the step of discharging the chemical liquid includes the step of moving the chemical liquid to an end of the upper surface of the heating member and discharging the chemical liquid from the end of the upper surface of the heating member. A method for cleaning a heating member as described in the above. 7. The heating member cleaning method according to claim 1, wherein the step of discharging the chemical solution includes a step of supplying gas to the center of the upper surface of the heating member. 7. The heating member cleaning method according to claim 1, wherein the step of discharging the chemical solution includes a step of rotating the heating member. a substrate holder for holding the substrate;
a heating member facing the back surface of the substrate held by the substrate holder;
a rinsing liquid supply section;
A chemical supply section;
comprising a control unit that controls the heating member, the chemical solution supply unit, and the rinsing liquid supply unit,
After supplying a rinsing liquid to the upper surface of the heating member, the control unit selectively supplies a chemical liquid to an outer peripheral portion of the upper surface of the heating member so that the chemical liquid is mixed with the rinsing liquid on the upper surface of the heating member. A substrate processing apparatus that controls the rinsing liquid supply section and the chemical solution supply section so that they are mixed. further comprising a gas supply section,
The control unit controls the upper surface of the heating member before selectively supplying the chemical solution to the outer peripheral portion of the upper surface of the heating member and after supplying the rinsing liquid to the upper surface of the heating member. 10. The substrate processing apparatus according to claim 9, wherein the gas supply section is controlled to supply gas to the substrate. The substrate processing apparatus according to claim 10, wherein the control unit controls the gas supply unit to form the rinsing liquid in a ring shape by supplying the gas to the upper surface of the heating member. 10. The control unit controls the gas supply unit to supply the gas to the center of the heating member after selectively supplying the chemical solution to the outer peripheral portion of the upper surface of the heating member. Or the substrate processing apparatus according to 11. The heating member is configured to be rotatable,
Any one of claims 9 to 12, wherein the control unit controls the heating member to rotate the heating member after selectively supplying the chemical solution to the outer peripheral portion of the upper surface of the heating member. The substrate processing apparatus described.

Images