JP7392015B2 - Calcium lithium niobate dielectric composition without dielectric dispersion and method for producing the same - Google Patents
Calcium lithium niobate dielectric composition without dielectric dispersion and method for producing the same Download PDFInfo
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- 239000000203 mixture Substances 0.000 title claims description 117
- USOPFYZPGZGBEB-UHFFFAOYSA-N calcium lithium Chemical compound [Li].[Ca] USOPFYZPGZGBEB-UHFFFAOYSA-N 0.000 title claims description 60
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000006185 dispersion Substances 0.000 title description 4
- 239000000126 substance Substances 0.000 claims description 63
- 239000002135 nanosheet Substances 0.000 claims description 48
- 239000010955 niobium Substances 0.000 claims description 36
- 239000010409 thin film Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 25
- 239000011575 calcium Substances 0.000 claims description 24
- 150000002500 ions Chemical class 0.000 claims description 22
- 239000002243 precursor Substances 0.000 claims description 20
- 239000000243 solution Substances 0.000 claims description 20
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 20
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 12
- 229910001414 potassium ion Inorganic materials 0.000 claims description 11
- 238000001354 calcination Methods 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 6
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 6
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 6
- 239000003929 acidic solution Substances 0.000 claims description 6
- 229910052791 calcium Inorganic materials 0.000 claims description 6
- 229910052744 lithium Inorganic materials 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- 229910052700 potassium Inorganic materials 0.000 claims description 6
- 239000011591 potassium Substances 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 6
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 6
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 6
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 6
- 238000001962 electrophoresis Methods 0.000 claims description 5
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 5
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 22
- 239000003989 dielectric material Substances 0.000 description 21
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 239000002253 acid Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 6
- 238000000498 ball milling Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 239000003985 ceramic capacitor Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000004626 scanning electron microscopy Methods 0.000 description 3
- 229910019738 Nb4O Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- -1 BaTiO 3 Chemical class 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 229940043430 calcium compound Drugs 0.000 description 1
- 150000001674 calcium compounds Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002642 lithium compounds Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 150000003112 potassium compounds Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
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- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Inorganic Insulating Materials (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
特許法第30条第2項適用 2021年3月8日 ウェブサイト https://doi.org/10.1016/j.ceramint.2021.03.046にて公開Application of Article 30, Paragraph 2 of the Patent Act March 8, 2021 Website https://doi. org/10.1016/j. ceramint. Published on 2021.03.046
本明細書は、広い周波数領域で高誘電率と低誘電損失特性を有するニオブ酸カルシウムリチウム誘電体組成物及びその製造方法に関する。 The present specification relates to a calcium lithium niobate dielectric composition having high dielectric constant and low dielectric loss characteristics over a wide frequency range, and a method for manufacturing the same.
近年、コードレス電話機や移動通信端末のデュプレクサ(Duplexer)、バンドパスフィルタ(Band Pass Filter)、多層回路基板、マイクロ波帯の共振器やフィルタ、コンピュータ用薄膜トランジスタ(Thin Film Transistor)といった電子部品及び積層セラミックコンデンサ(MLCC、multilayer ceramic capacitor)の集積化、超小型化に伴い、それらの中に用いられる誘電体材料もまた小型化、高性能化及び安定化が求められている。さらには、集積化や柔軟化、超軽量化の傾向に合わせて微細且つ安定した特性を示し得る新規な物質を見出すための研究が進んでいる。 In recent years, electronic components such as duplexers for cordless telephones and mobile communication terminals, band pass filters, multilayer circuit boards, microwave band resonators and filters, and thin film transistors for computers, and multilayer ceramics. As capacitors (MLCCs, multilayer ceramic capacitors) become more integrated and ultra-miniaturized, the dielectric materials used therein are also required to be more compact, have higher performance, and be more stable. Furthermore, research is progressing to find new materials that can exhibit fine and stable properties in line with the trends toward integration, flexibility, and ultra-light weight reduction.
最近、酸化物ナノシートは、多様な組成及び構造にて容易に製造でき且つ電子装置に適合した有用な特性を示すため注目を集めている。特に、ニオブ酸八面体を有するペロブスカイトナノシートを用いて作製した誘電体薄膜も試みられている。層状構造ナノシートは、母組成の化合物から示される種々の特性を更に優れた特性に変換させてナノシートならではの特性を発現する。次世代デバイスに適合したナノシート材料の母組成としては、KCaNbO、KTiNbO、KLaNbO、KCaNaNbOなどの種々のペロブスカイト物質が報告されている。 Recently, oxide nanosheets have attracted attention because they can be easily manufactured in various compositions and structures and exhibit useful properties suitable for electronic devices. In particular, attempts have been made to fabricate dielectric thin films using perovskite nanosheets having niobic acid octahedrons. The layered nanosheet exhibits properties unique to nanosheets by converting the various properties exhibited by the compounds of the parent composition into even better properties. Various perovskite materials such as KCaNbO, KTiNbO, KLaNbO, and KCaNaNbO have been reported as parent compositions of nanosheet materials suitable for next-generation devices.
また、MLCCなどを具現するためには、誘電体の容量を決める内部電極の面積を広げ且つ電極と誘電体の厚さを低減させるべきことは必須であるが、従来技術によれば、誘電体の厚さを低減するには大きな限界がある。MLCCの誘電体材料としては、高い誘電定数を持つBaTiO3、SrTiO3、CaTiO3、あるいはこれらを組み合わせた組成などのチタン酸化物が主に用いられている。しかし、このようなチタン酸化物誘電体物質の場合、球形の粒子で合成されるため、既存の誘電体膜を成膜する技術によれば、薄膜の作製後の熱処理工程の際に、基板界面の劣化、組成のずれ、多くの粒界面を有するという問題によって非線形的な誘電特性(non-linear electric property、ΔC/C0)を引き起こし高い誘電損失を示す。さらに、誘電体層が1~3μm程度まで薄層化すると、絶縁性や高温負荷時の耐久性が悪化して信頼性低下をもたらすようになるため、これらの材料の場合には、高容量化を目標とするナノ厚さレベルのMLCCに適用され難い。 Furthermore, in order to realize MLCC etc., it is essential to increase the area of the internal electrodes that determine the capacitance of the dielectric and to reduce the thickness of the electrodes and the dielectric. There is a big limit to reducing the thickness of. As a dielectric material for MLCCs, titanium oxides such as BaTiO 3 , SrTiO 3 , CaTiO 3 , or combinations thereof, which have a high dielectric constant, are mainly used. However, in the case of such a titanium oxide dielectric material, since it is synthesized with spherical particles, according to the existing technology for forming a dielectric film, the substrate interface is The problems of deterioration of the composition, deviation of the composition, and having many grain boundaries cause non-linear electric property (ΔC/C 0 ) and high dielectric loss. Furthermore, when the dielectric layer is thinned to about 1 to 3 μm, the insulation properties and durability under high-temperature loads deteriorate, leading to a decrease in reliability. It is difficult to apply this method to nano-thickness level MLCC, which aims at
また、既存の誘電体材料を合成してMLCC構成単位を作製するスクリーン印刷方式(シートに電極ペーストを印刷して多層に積層し切断した後に高温焼結を行う工程)によって薄膜化及び高積層化、小型化を具現するには限界がある。したがって、次世代デバイスへの適用が可能なMLCCの具現のためには、ナノ厚さレベルの薄膜でも安定した特性を有する誘電体ナノシートだけではなく多様な特性を有するナノシートのために広い周波数領域で安定した誘電特性を示し且つ多様な組成を有するペロブスカイト層状構造の母材料の研究開発の必要性が台頭してきている。 In addition, thinner films and higher laminations can be achieved through the screen printing method (a process in which electrode paste is printed on a sheet, laminated in multiple layers, cut, and then sintered at high temperature), which synthesizes existing dielectric materials to create MLCC structural units. However, there are limits to achieving miniaturization. Therefore, in order to realize MLCCs that can be applied to next-generation devices, we need not only dielectric nanosheets that have stable properties even in nano-thickness level thin films, but also nanosheets that have various properties that can be used in a wide frequency range. There is an emerging need for research and development of host materials for perovskite layered structures that exhibit stable dielectric properties and have diverse compositions.
本発明の具現例は、このような問題点を解決するために高誘電率と低誘電損失の誘電特性を有する誘電体組成物を提供することをその目的とする。 In order to solve these problems, embodiments of the present invention provide a dielectric composition having dielectric properties of high dielectric constant and low dielectric loss.
また、層状出発粒子を球形ではないシート状に作製する場合に粒界面を極力低減できるのみならず、結晶質のシートを用いる場合に熱処理工程が不要となって基板と誘電物質間の劣化問題を解決することをその目的とする。 In addition, when producing layered starting particles in a non-spherical sheet form, not only can grain boundaries be reduced as much as possible, but also when using a crystalline sheet, a heat treatment process is no longer necessary, which reduces the problem of deterioration between the substrate and dielectric material. Its purpose is to solve the problem.
さらに、これによって積層セラミックキャパシタ、チューニング可能な素子、及びトランジスタ用ゲートなどの多様な種類の電子機器に用いることができ、従来の材料に代え得る新規な材料を提供することをその目的とする。 Furthermore, it is an object of the present invention to provide a novel material that can be used in various types of electronic devices such as multilayer ceramic capacitors, tunable elements, and gates for transistors, and can replace conventional materials.
前述した目的を達成するために、本発明に係る一具現例においては、化学式1で表される組成を有するニオブ酸カルシウムリチウム誘電体を含む、ニオブ酸カルシウムリチウム誘電体組成物を提供する。 In order to achieve the above object, an embodiment of the present invention provides a calcium lithium niobate dielectric composition including a calcium lithium niobate dielectric having a composition represented by Formula 1.
[化学式1]
KCaxLiyNb4O13
(前記式中、xは1.80≦x≦2.20、yは0.80≦y≦1.20、x+y=3)
また、前述したニオブ酸カルシウムリチウム誘電体組成物のK+イオンがH+イオンでカチオン置換された、化学式2で表される組成を有するニオブ酸カルシウムリチウム誘電体;を含む、ニオブ酸カルシウムリチウム誘電体組成物を提供する。
[Chemical formula 1]
KCa x Li y Nb 4 O 13
(In the above formula, x is 1.80≦x≦2.20, y is 0.80≦y≦1.20, x+y=3)
Further, a calcium lithium niobate dielectric comprising: a calcium lithium niobate dielectric having a composition represented by chemical formula 2, in which the K + ions of the calcium lithium niobate dielectric composition described above are cationically substituted with H + ions; Provides body composition.
[化学式2]
HCaxLiyNb4O13
(前記式中、xは1.80≦x≦2.20、yは0.80≦y≦1.20、x+y=3)
一具現例において、前記化学式2で表される組成を有するニオブ酸カルシウムリチウム誘電体は、板状の粒子が積層された層状構造を有してよい。
[Chemical formula 2]
HCa x Li y Nb 4 O 13
(In the above formula, x is 1.80≦x≦2.20, y is 0.80≦y≦1.20, x+y=3)
In one embodiment, the calcium lithium niobate dielectric having the composition represented by Formula 2 may have a layered structure in which plate-shaped particles are stacked.
また、前述したニオブ酸カルシウムリチウム誘電体組成物のH+イオンが脱落した、化学式3で表される組成を有するニオブ酸カルシウムリチウム誘電体;を含む、ニオブ酸カルシウムリチウム誘電体組成物を提供する。 Further, there is provided a calcium lithium niobate dielectric composition comprising: a calcium lithium niobate dielectric having a composition represented by chemical formula 3, from which the H + ions of the above-described calcium lithium niobate dielectric composition have been removed. .
[化学式3]
CaxLiyNb4O13
(前記式中、xは1.80≦x≦2.20、yは0.80≦y≦1.20、x+y=3)
一具現例において、前記化学式3で表される組成を有するニオブ酸カルシウムリチウム誘電体は、ナノシート状を有してよい。
[Chemical formula 3]
Ca x Li y Nb 4 O 13
(In the above formula, x is 1.80≦x≦2.20, y is 0.80≦y≦1.20, x+y=3)
In one embodiment, the calcium lithium niobate dielectric having the composition represented by Formula 3 may have a nanosheet shape.
一具現例において、前記ナノシートは、50nm~50μmの平均直径及び10nm以下の厚さを有してよい。 In one embodiment, the nanosheets may have an average diameter of 50 nm to 50 μm and a thickness of 10 nm or less.
一具現例において、前記ニオブ酸カルシウムリチウム誘電体組成物は、10~104Hzの周波数範囲で、100以下の誘電定数及び0.25以下の誘電損失を有してよい。 In one embodiment, the calcium lithium niobate dielectric composition may have a dielectric constant of 100 or less and a dielectric loss of 0.25 or less in the frequency range of 10-10 4 Hz.
一具現例において、前記ニオブ酸カルシウムリチウム誘電体組成物は、104~108の周波数範囲で、90以下の誘電定数及び0.02以下の誘電損失を有してよい。 In one embodiment, the calcium lithium niobate dielectric composition may have a dielectric constant of 90 or less and a dielectric loss of 0.02 or less in a frequency range of 10 4 to 10 8 .
本発明に係る一具現例において、前述した化学式3で表される組成を有するニオブ酸カルシウムリチウム誘電体が積層された、ナノシート薄膜を提供する。 In one embodiment of the present invention, a nanosheet thin film is provided in which a calcium lithium niobate dielectric having a composition represented by the above-mentioned chemical formula 3 is laminated.
また、前述したナノシート薄膜を含む、キャパシタ、チューニング可能な素子、及びトランジスタ用ゲートを提供する。 The present invention also provides a capacitor, a tunable element, and a gate for a transistor, including the nanosheet thin film described above.
本発明に係る他の具現例において、カリウム前駆体、カルシウム前駆体、リチウム前駆体、及びニオビオム酸化物を混合及び仮焼して化学式1で表される組成を有する誘電体を形成する段階;を含む、ニオブ酸カルシウムリチウム誘電体組成物の製造方法を提供する。 In another embodiment of the present invention, mixing and calcining a potassium precursor, a calcium precursor, a lithium precursor, and a niobium oxide to form a dielectric having a composition represented by Formula 1; A method of manufacturing a calcium lithium niobate dielectric composition is provided.
[化学式1]
KCaxLiyNb4O13
(前記式中、xは1.80≦x≦2.20、yは0.80≦y≦1.20 x+y=3)
一具現例において、前記化学式1で表される誘電体を酸性溶液で撹拌してK+イオンをH+イオンでカチオン置換させて、化学式2で表される組成を有する誘電体を形成する段階;を更に含んでよい。
[Chemical formula 1]
KCa x Li y Nb 4 O 13
(In the above formula, x is 1.80≦x≦2.20, y is 0.80≦y≦1.20 x+y=3)
In one embodiment, stirring the dielectric represented by Formula 1 with an acidic solution to cationically replace K + ions with H + ions to form a dielectric having a composition represented by Formula 2; may further include.
[化学式2]
HCaxLiyNb4O13
(前記式中、xは1.80≦x≦2.20、yは0.80≦y≦1.20 x+y=3)
一具現例において、前記化学式2で表される誘電体を水酸化物溶液で撹拌して、化学式3で表される組成を有する誘電体を形成する段階を更に含んでよい。
[Chemical formula 2]
HCa x Li y Nb 4 O 13
(In the above formula, x is 1.80≦x≦2.20, y is 0.80≦y≦1.20 x+y=3)
In one embodiment, the method may further include stirring the dielectric material represented by Chemical Formula 2 with a hydroxide solution to form a dielectric material having a composition represented by Chemical Formula 3.
[化学式3]
CaxLiyNb4O13
(前記式中、xは1.80≦x≦2.20、yは0.80≦y≦1.20 x+y=3)
一具現例において、前記化学式3で表される組成を有する誘電体は、化学式2で表される組成を有するバルク誘電体が剥離されたナノシート状を有してよい。
[Chemical formula 3]
Ca x Li y Nb 4 O 13
(In the above formula, x is 1.80≦x≦2.20, y is 0.80≦y≦1.20 x+y=3)
In one embodiment, the dielectric having the composition represented by Chemical Formula 3 may have a nanosheet shape from which a bulk dielectric having the composition represented by Chemical Formula 2 has been peeled off.
一具現例において、前記仮焼は、800~~1200℃の温度範囲で行われてよい。 In one embodiment, the calcination may be performed at a temperature range of 800 to 1200°C.
一具現例において、形成された化学式1で表される組成を有する誘電体を1100~1150℃の空気雰囲気下で焼結してよい。 In one embodiment, the formed dielectric having the composition represented by Formula 1 may be sintered at 1100-1150° C. in an air atmosphere.
一具現例において、前記水酸化物溶液は、テトラブチルアンモニウム水酸化物(TBAOH)、テトラプロピルアンモニウム水酸化物(TPAOH)、テトラエチルアンモニウム水酸化物(TEAOH)、及びテトラメチルアンモニウム水酸化物(TMAOH)から構成される群より選択される一種以上の溶液であってよい。 In one embodiment, the hydroxide solution includes tetrabutylammonium hydroxide (TBAOH), tetrapropylammonium hydroxide (TPAOH), tetraethylammonium hydroxide (TEAOH), and tetramethylammonium hydroxide (TMAOH). ) may be one or more solutions selected from the group consisting of:
本発明に係る他の具現例において、化学式3で表される組成を有するナノシート状の誘電体を電気泳動法又はラングミュア・ブロジェット法でナノシート薄膜を形成する、ナノシート薄膜の製造方法が提供される。 In another embodiment of the present invention, there is provided a method for manufacturing a nanosheet thin film, which comprises forming a nanosheet thin film using an electrophoresis method or a Langmuir-Blodgett method using a nanosheet-like dielectric material having a composition represented by chemical formula 3. .
[化学式3]
CaxLiyNb4O13
(前記式中、xは1.80≦x≦2.20、yは0.80≦y≦1.20 x+y=3)
[Chemical formula 3]
Ca x Li y Nb 4 O 13
(In the above formula, x is 1.80≦x≦2.20, y is 0.80≦y≦1.20 x+y=3)
本発明に係るニオブ酸カルシウムリチウム誘電体組成物は、誘電率が大きく誘電損失は低い特性を有すると共に、ナノレベルの厚さでも線形的且つ優れた誘電率を有し絶縁特性を実現することができる、低温素子の作製に応用可能なナノシート状の誘電物質を提供することができる。また、出発粒子を球形ではないシート状に作製することで粒界面を極力低減できるのみならず、結晶質のシートを用いる場合に熱処理工程を不要とする長所を有する。 The calcium lithium niobate dielectric composition according to the present invention has the characteristics of a high dielectric constant and low dielectric loss, and also has a linear and excellent dielectric constant even at nano-level thickness, and can realize insulation properties. It is possible to provide a nanosheet-like dielectric material that can be applied to the production of low-temperature devices. Further, by producing the starting particles in a non-spherical sheet shape, not only can grain boundaries be reduced as much as possible, but also there is an advantage that a heat treatment step is not required when using a crystalline sheet.
また、従来の誘電体素子の製造工程で求められていた真空装置や高価の蒸着装備を不要とするため、低コスト及び早期作製時間を充足する素子の製造工程の設計を可能にした。 Furthermore, since the vacuum equipment and expensive vapor deposition equipment required in the conventional dielectric element manufacturing process are not required, it is possible to design an element manufacturing process that satisfies low cost and early manufacturing time.
さらに、ニオブ酸カルシウムリチウム誘電体の合成条件に応じてナノシートの大きさが調節でき、用途に適合した大きさのナノシートを合成可能な技術を提供し、素子に適用する場合により均一な薄膜を作製できる方法を提供する。 Furthermore, the size of the nanosheets can be adjusted according to the synthesis conditions of the calcium lithium niobate dielectric, providing a technology that can synthesize nanosheets with a size that suits the application, and creating more uniform thin films when applied to devices. Provide a way to do so.
したがって、従来の素子製造工程で生じていた基板と誘電物質間の劣化問題が解決でき且つ誘電体バルク共振器、積層セラミックキャパシタ、チューニング可能な素子、トランジスタ用ゲート、及びランダムアクセスメモリ素子などといった電子情報機器の広範な分野に適用され得る。 Therefore, it is possible to solve the problem of deterioration between the substrate and the dielectric material that occurred in the conventional device manufacturing process, and to solve the problem of deterioration between the substrate and the dielectric material that occurred in the conventional device manufacturing process. It can be applied to a wide range of fields of information equipment.
[発明を実施するための具体的な内容]
以下、本発明の実施例をより詳しく説明することにする。
[Specific details for carrying out the invention]
Hereinafter, embodiments of the present invention will be described in more detail.
本文に開示されている本発明の実施例は、単に説明のための目的から例示されたものであるに過ぎず、本発明の実施例は種々の形態で実施されてよく、本文に説明された実施例に限定されると解釈されてはいけない。 The embodiments of the invention disclosed herein are merely illustrative for purposes of illustration, and embodiments of the invention may be implemented in a variety of forms and may be implemented in a variety of forms. It should not be construed as being limited to the examples.
本発明は、種々の変更を加えることができ且つ種々の形態を有し得るところ、実施例は本発明を特定の開示形態に限定するためのものではなく、本発明の思想や技術範囲に含まれるすべての変更、均等物乃至代替物を含むものと理解されるべきである。 The present invention may be subject to various changes and may take various forms; however, the examples are not intended to limit the present invention to a specific disclosed form, but rather include various modifications within the spirit and technical scope of the present invention. It should be understood that it includes all modifications, equivalents and substitutions.
単数の表現は、文脈上明らかに異なる意味となっていない限り、複数の表現を含む。本出願において、「含む」又は「有する」などの用語は明細書上に記載された特徴、数字、段階、動作、構成要素、部品又はこれらを組み合わせてなるものが存在することを指定するために用いたものであって、一つ又はそれ以上の他の特徴や数字、段階、動作、構成要素、部品又はこれらを組み合わせてなるものなどの存在又は付加可能性を予め排除するために用いたものではない理解されるべきである。 A singular expression includes a plural expression unless the context clearly dictates otherwise. In this application, terms such as "comprising" or "having" are used to specify the presence of a feature, number, step, act, component, part, or combination thereof described in the specification. Items used to exclude in advance the existence or possibility of addition of one or more other features, numbers, steps, operations, components, parts, or combinations of these. It should be understood that this is not the case.
本発明の具現例では、ニオブ酸層を含むペロブスカイト構造層が増えるほど高い誘電性を呈し且つナノレベルの薄膜でも誘電体ナノ材料としての応用が可能である点を基にして、二重層状ペロブスカイト構造を有するKCa2Nb3O10セラミック組成物と単一のペロブスカイト構造を有するLiNbO3を合成して一般式KCa2LiNb4O13(KCLNO)で表される誘電特性を有する物質を効率的に製造することに関して多様な検討を行って合成した。 In the embodiment of the present invention, a double-layer perovskite is fabricated based on the fact that as the number of perovskite structure layers including a niobic acid layer increases, the dielectric property becomes higher and even a nano-level thin film can be applied as a dielectric nanomaterial. A material with dielectric properties represented by the general formula KCa 2 LiNb 4 O 13 (KCLNO) can be efficiently produced by synthesizing a KCa 2 Nb 3 O 10 ceramic composition with a single perovskite structure and LiNbO 3 with a single perovskite structure. The compound was synthesized after conducting various studies regarding its production.
ニオブ酸カルシウムリチウム誘電体組成物
前述した目的を達成するために、本発明に係る一具現例において、化学式1で表される組成(KCLNO)を有するニオブ酸カルシウムリチウム誘電体;を含む、ニオブ酸カルシウムリチウム誘電体組成物を提供する。
Calcium Lithium Niobate Dielectric Composition To achieve the above-mentioned objects, in one embodiment of the present invention, a calcium lithium niobate dielectric composition having a composition represented by Formula 1 (KCLNO); A calcium lithium dielectric composition is provided.
[化学式1]
KCaxLiyNb4O13
(前記式中、xは1.80≦x≦2.20、yは0.80≦y≦1.20 x+y=3)
また、前述したニオブ酸カルシウムリチウム誘電体組成物のK+イオンがH+イオンでカチオン置換された、化学式2で表される組成(HCLNO)を有するニオブ酸カルシウムリチウム誘電体;を含む、ニオブ酸カルシウムリチウム誘電体組成物を提供する。
[Chemical formula 1]
KCa x Li y Nb 4 O 13
(In the above formula, x is 1.80≦x≦2.20, y is 0.80≦y≦1.20 x+y=3)
Further, a calcium lithium niobate dielectric having a composition represented by chemical formula 2 (HCLNO) in which the K + ions of the calcium lithium niobate dielectric composition described above are cationically substituted with H + ions; A calcium lithium dielectric composition is provided.
[化学式2]
HCaxLiyNb4O13
(前記式中、xは1.80≦x≦2.20、yは0.80≦y≦1.20 x+y=3)
一具現例において、前記化学式2で表される組成を有するニオブ酸カルシウムリチウム誘電体は、板状の粒子が積層された層状構造を有してよい。例えば、層あたり4層の単位格子を有する積層された層状構造を有してよい。具体的に、前記ニオブ酸カルシウムリチウム誘電体は、Li挿入による追加合成によって集合層を4層に変更させたものであってよい。一方、Liを挿入していないニオブ酸誘電体、例えば、KCa2Nb3O10の場合、ペロブスカイト構造の八面体単位格子の集合層が3層に過ぎず、他の層状構造を有し得る。かかる層状構造の違いによって誘電定数が増加し誘電損失は低減し、且つ周波数に応じた誘電率の分散が少ないという特徴を有し得る。
[Chemical formula 2]
HCa x Li y Nb 4 O 13
(In the above formula, x is 1.80≦x≦2.20, y is 0.80≦y≦1.20 x+y=3)
In one embodiment, the calcium lithium niobate dielectric having the composition represented by Formula 2 may have a layered structure in which plate-shaped particles are stacked. For example, it may have a stacked layered structure with four unit cells per layer. Specifically, the calcium lithium niobate dielectric may have four aggregate layers formed by additional synthesis using Li insertion. On the other hand, in the case of a niobic acid dielectric without Li inserted therein, for example, KCa 2 Nb 3 O 10 , there are only three assembled layers of octahedral unit cells in a perovskite structure, and it may have other layered structures. Due to the difference in the layered structure, the dielectric constant increases, the dielectric loss decreases, and the dispersion of the dielectric constant depending on the frequency is small.
また、前述したニオブ酸カルシウムリチウム誘電体組成物のH+イオンが脱落した、化学式3で表される組成(CLNO)を有するニオブ酸カルシウムリチウム誘電体;を含む、ニオブ酸カルシウムリチウム誘電体組成物を提供する。 Further, a calcium lithium niobate dielectric composition comprising: a calcium lithium niobate dielectric having a composition represented by chemical formula 3 (CLNO) from which the H + ions of the above-described calcium lithium niobate dielectric composition have been removed; I will provide a.
[化学式3]
CaxLiyNb4O13
(前記式中、xは1.80≦x≦2.20、yは0.80≦y≦1.20、x+y=3)
一具現例において、前記化学式3で表される組成を有するニオブ酸カルシウムリチウム誘電体はナノシート状を有してよい。
[Chemical formula 3]
Ca x Li y Nb 4 O 13
(In the above formula, x is 1.80≦x≦2.20, y is 0.80≦y≦1.20, x+y=3)
In one embodiment, the calcium lithium niobate dielectric having the composition represented by Formula 3 may have a nanosheet shape.
一具現例において、前記ナノシートは、50nm~50μmの平均直径及び10nm以下の厚さを有してよい。前記ナノシートが前述した平均直径と厚さ範囲を有する場合、高い誘電特性及び周波数変化に応じた優れた安定性を有し得る。 In one embodiment, the nanosheets may have an average diameter of 50 nm to 50 μm and a thickness of 10 nm or less. When the nanosheet has the above average diameter and thickness range, it may have high dielectric properties and excellent stability in response to frequency changes.
一具現例において、前記ニオブ酸カルシウムリチウム誘電体組成物は、10~108Hzの周波数範囲で、100以下の誘電定数及び0.25以下の誘電損失を有してよい。例えば、104~108Hzの周波数範囲で、90以下の誘電定数及び0.02以下の誘電損失を有してよい。一方、前記ニオブ酸カルシウムリチウム誘電体は、周波数変化に応じた誘電定数と誘電損失の変化を有し得る。すなわち、周波数に応じたこれらの値の分散(dispersion)が少ない特徴を有し得る。例えば、前記103~108Hzの周波数範囲で、60~70の誘電定数と0.02以下の誘電損失を有し得る。よって、広い周波数領域で高誘電率と低誘電損失特性を有し得る。 In one embodiment, the calcium lithium niobate dielectric composition may have a dielectric constant of 100 or less and a dielectric loss of 0.25 or less in the frequency range of 10-10 8 Hz. For example, it may have a dielectric constant of 90 or less and a dielectric loss of 0.02 or less in the frequency range of 10 4 to 10 8 Hz. Meanwhile, the calcium lithium niobate dielectric may have a dielectric constant and a dielectric loss that change according to a change in frequency. That is, it may have a characteristic that the dispersion of these values depending on the frequency is small. For example, in the frequency range of 10 3 to 10 8 Hz, it may have a dielectric constant of 60 to 70 and a dielectric loss of 0.02 or less. Therefore, it can have high dielectric constant and low dielectric loss characteristics over a wide frequency range.
本発明に係る一具現例において、前述した化学式3で表される組成を有するニオブ酸カルシウムリチウム誘電体が積層された、ナノシート薄膜を提供する。 In one embodiment of the present invention, a nanosheet thin film is provided in which a calcium lithium niobate dielectric having a composition represented by the above-mentioned chemical formula 3 is laminated.
また、前述したナノシート薄膜を含む、キャパシタ、チューニング可能な素子、及びトランジスタ用ゲートを提供する。このように前述したKCLNO誘電体物質は、広い範囲で誘電特性を示すことからナノシートセラミックキャパシタ、チューニング可能な素子、及び次世代TFTの誘電膜などに用いられ得る。 The present invention also provides a capacitor, a tunable element, and a gate for a transistor, including the nanosheet thin film described above. As described above, the KCLNO dielectric material exhibits dielectric properties over a wide range and can be used for nanosheet ceramic capacitors, tunable devices, and dielectric films of next-generation TFTs.
したがって、本発明の具現例は、一般式KCa2LiNb4O13(KCLNO)で表される組成物を提供し、K+イオンをH+イオンで置換してから仮焼して、一般式HCa2LiNb4O13(HCLNO)で表される誘電体組成物を提供する。また、ナノレベルの誘電体膜への応用のためにH+イオンをTBA+イオンで置換してから剥離して、一般式Ca2LiNb4O13(CLNO)で表されるニオブ酸系誘電体ナノシートを提供する。 Therefore, embodiments of the present invention provide a composition represented by the general formula KCa 2 LiNb 4 O 13 (KCLNO), replace K + ions with H + ions, and then calcined to form the composition represented by the general formula HCa A dielectric composition represented by 2LiNb4O13 ( HCLNO) is provided. In addition, for application to nano-level dielectric films, H + ions are replaced with TBA + ions and then peeled off to form a niobic acid-based dielectric represented by the general formula Ca 2 LiNb 4 O 13 (CLNO). Provide nanosheets.
ニオブ酸カルシウムリチウム誘電体組成物の製造方法
本発明に係る他の具現例において、カリウム前駆体、カルシウム前駆体、リチウム前駆体、及びニオビオム酸化物を混合及び仮焼して、化学式1で表される組成を有する誘電体を形成する段階;を含む、ニオブ酸カルシウムリチウム誘電体組成物の製造方法を提供する。
Method for Producing Calcium Lithium Niobate Dielectric Composition In another embodiment of the present invention, a potassium precursor, a calcium precursor, a lithium precursor, and a niobium oxide are mixed and calcined to form a dielectric composition represented by Formula 1. forming a dielectric having a composition of:
[化学式1]
KCaxLiyNb4O13
(前記式中、xは1.80≦x≦2.20、yは0.80≦y≦1.20)
先ず、カリウム前駆体、カルシウム前駆体、リチウム前駆体、及びニオビオム酸化物を混合してから仮焼してよい。
[Chemical formula 1]
KCa x Li y Nb 4 O 13
(In the above formula, x is 1.80≦x≦2.20, and y is 0.80≦y≦1.20)
First, a potassium precursor, a calcium precursor, a lithium precursor, and a niobium oxide may be mixed and then calcined.
前記カリウム前駆体、カルシウム前駆体、リチウム前駆体は、それぞれカリウム化合物、カルシウム化合物、リチウム化合物であれば、それらの種類は限定されるものではない。具体的に、それぞれK2CO3、CaCO3、及びLiNbO3であってよいが、これらに限定されるものではない。前記カリウム前駆体、カルシウム前駆体、リチウム前駆体、及びニオビオム酸化物は、純度99%以上のものが好ましい。 The types of the potassium precursor, calcium precursor, and lithium precursor are not limited as long as they are potassium compounds, calcium compounds, and lithium compounds, respectively. Specifically, they may be K 2 CO 3 , CaCO 3 , and LiNbO 3 , respectively, but are not limited thereto. The potassium precursor, calcium precursor, lithium precursor, and niobium oxide preferably have a purity of 99% or more.
例えば、K2CO3、CaCO3、LiNbO3、及びNb2O5を用いて、一般式KCaxLiyNb4O13(1.80≦x≦2.20、0.80≦y≦1.20)を満たす組成比にて秤量した後、エタノールを溶媒にしてジルコニアボールとともにボールミル工程にて湿式混合後、100℃のオーブンで乾燥してから、1100℃で仮焼して収得してよい。 For example, using K 2 CO 3 , CaCO 3 , LiNbO 3 , and Nb 2 O 5 , the general formula KCa x Li y Nb 4 O 13 (1.80≦x≦2.20, 0.80≦y≦1 After weighing at a composition ratio that satisfies .20), wet mixing with zirconia balls using ethanol as a solvent in a ball milling process, drying in an oven at 100°C, and then calcining at 1100°C. .
具体的に、純度99%以上のK2CO3、CaCO3、及びNb2O5を用いて、一般式KCa2Nb3O10を満たす組成比にて秤量した後、エタノールを溶媒にしてジルコニアボールとともにボールミル工程にて湿式混合後、100℃のオーブンで乾燥し、1200℃で仮焼してKCNOを得た後、該組成物に他の合成物であるLiNbO3を一般式KCa2LiNb4O13の組成比に合わせて秤量してジルコニアボールとともにボールミル工程にて湿式混合後、100℃のオーブンで乾燥し、800~1200℃で仮焼してKCLNOを得たものであってよい。 Specifically, K 2 CO 3 , CaCO 3 , and Nb 2 O 5 with a purity of 99% or more are weighed at a composition ratio that satisfies the general formula KCa 2 Nb 3 O 10 , and then zirconia is prepared using ethanol as a solvent. After wet mixing with balls in a ball mill process, drying in an oven at 100°C and calcining at 1200°C to obtain KCNO, another compound LiNbO 3 was added to the composition with the general formula KCa 2 LiNb 4 It may be weighed according to the composition ratio of O 13 , wet mixed with zirconia balls in a ball milling process, dried in an oven at 100°C, and calcined at 800 to 1200°C to obtain KCLNO.
次に、前記化学式1で表される誘電体を酸性溶液で撹拌してK+イオンをH+イオンでカチオン置換させて、化学式2で表される組成を有する誘電体を形成してよい。 Next, the dielectric material represented by Chemical Formula 1 may be stirred with an acidic solution to cationically replace K + ions with H + ions, thereby forming a dielectric material having a composition represented by Chemical Formula 2.
[化学式2]
HCaxLiyNb4O13
(前記式中、xは1.80≦x2.20、yは0.80≦y≦1.20、x+y=3)
前記化学式2で表されるHCaxLiyNb4O13ニオブ酸誘電体組成物は、前記化学式1で表される誘電体組成物を酸性溶液で撹拌してCaxLiyNb4O13層の間に一層ずつ挿入されているK+イオンをH+イオンでカチオン置換させて製造してよい。前記化学式1で表される誘電体組成物を酸性溶液で撹拌すると、K+イオンがH+イオンで置換されて前記化学式2で表される誘電体組成物を収得することができる。
[Chemical formula 2]
HCa x Li y Nb 4 O 13
(In the above formula, x is 1.80≦x2.20, y is 0.80≦y≦1.20, x+y=3)
The HCa x Li y Nb 4 O 13 niobic acid dielectric composition represented by the chemical formula 2 is prepared by stirring the dielectric composition represented by the chemical formula 1 with an acidic solution to form a layer between the Ca x Li y Nb 4 O 13 layers. It may be produced by cationically replacing K + ions inserted in each layer with H + ions. When the dielectric composition represented by Chemical Formula 1 is stirred in an acidic solution, K + ions are replaced with H + ions, and a dielectric composition represented by Chemical Formula 2 can be obtained.
例えば、合成されたKCLNO合成物は、1M~7MのHNO3、HCl、H2SO4などの酸溶液で5日間撹拌してCLNO層の間に挿入されているK+イオンをH+イオンで置換したものであってよい。置換済みの溶液を遠心分離機を用いてDI Waterで数回洗浄した後、65℃で24時間乾燥してHCLNOを得てよい。合成されたKCLNO組成物は、100kgf/cm2の圧力で直径12mm、高さ0.5~1mmのペレットに成形した後、電気炉を用いて1100~1200℃の空気雰囲気下で焼結(sintering)してよい。 For example, the synthesized KCLNO compound can be stirred in a 1M to 7M acid solution such as HNO 3 , HCl, H 2 SO 4 for 5 days to replace the K + ions intercalated between the CLNO layers with H + ions. It may be replaced. The replaced solution may be washed several times with DI Water using a centrifuge and then dried at 65° C. for 24 hours to obtain HCLNO. The synthesized KCLNO composition was formed into pellets with a diameter of 12 mm and a height of 0.5 to 1 mm at a pressure of 100 kgf/ cm2 , and then sintered in an air atmosphere at 1100 to 1200°C using an electric furnace. ) may be done.
前記酸性溶液は特に限定されるものではなくて、例えば、HNO3、HCl、H2SO4などを用いてよい。 The acidic solution is not particularly limited, and for example, HNO3 , HCl, H2SO4 , etc. may be used.
例えば、前記化学式1で表される一具現例として、KCa2LiNb4O13の非線形的な誘電特性を解決するためにH+イオンで置換してよい、これにより、合成された前記化学式2のHCaxLiyNb4O13で表されるニオブ酸誘電体組成物は、高誘電率、低誘電損失だけでなく、広い周波数領域において線形的誘電特性を有し得る。すなわち、本発明に係る化学式2のHCaxLiyNb4O13で表されるニオブ酸誘電体組成物は、多様な範囲の周波数領域でもキャパシタンスの変化がほとんどなく高誘電率を保ちつつも誘電損失が極めて低い特性を有することを特徴とする。 For example, as an embodiment of the chemical formula 1, KCa 2 LiNb 4 O13 may be replaced with H + ions in order to solve the nonlinear dielectric properties, so that the synthesized HCa of the chemical formula 2 The niobic acid dielectric composition represented by x Li y Nb4O 13 can have not only a high dielectric constant and low dielectric loss, but also linear dielectric properties in a wide frequency range. That is, the niobic acid dielectric composition represented by HCa x Li y Nb4O 13 of chemical formula 2 according to the present invention shows almost no change in capacitance even in a wide range of frequency ranges, maintains a high dielectric constant, and has low dielectric loss. It is characterized by having extremely low properties.
したがって、前記化学式2のHCaxLiyNb4O13で表される誘電体物質は、広い範囲で優れた誘電特性を示すことから積層セラミックキャパシタ、マイクロ波誘電体、次世代TFTの誘電膜などに用いられ得る。また、剥離以前のバルク状態でも優れた誘電率を有する特徴があるので、バルク材料としてマイクロ波誘電体などに適用可能である。 Therefore, the dielectric material represented by HCa x Li y Nb 4 O 13 in the chemical formula 2 exhibits excellent dielectric properties over a wide range, and is therefore used in multilayer ceramic capacitors, microwave dielectrics, dielectric films for next-generation TFTs, etc. It can be used for Furthermore, since it has an excellent dielectric constant even in the bulk state before peeling, it can be applied as a bulk material to microwave dielectrics and the like.
例示的な具現例において、前記前駆体混合物は、湿式混合して形成してよく、具体的に、ジルコニアボールとともにボールミル工程にて湿式混合して前駆体混合物を形成してよい。 In an exemplary embodiment, the precursor mixture may be formed by wet mixing, and specifically, the precursor mixture may be formed by wet mixing with zirconia balls in a ball milling process.
次に、前記化学式2で表される誘電体を水酸化物溶液で撹拌して化学式3で表される組成を有する誘電体を形成してよい。 Next, the dielectric material represented by Chemical Formula 2 may be stirred in a hydroxide solution to form a dielectric material having a composition represented by Chemical Formula 3.
[化学式3]
CaxLiyNb4O13
(前記式中、xは1.80≦x≦2.20、yは0.80≦y≦1.20、x+y=3)
前記化学式3で表されるニオブ酸誘電体組成物は、前記化学式2で表される誘電体組成物を水酸化物溶液で撹拌して製造してよい。
[Chemical formula 3]
Ca x Li y Nb 4 O 13
(In the above formula, x is 1.80≦x≦2.20, y is 0.80≦y≦1.20, x+y=3)
The niobic acid dielectric composition represented by Formula 3 may be prepared by stirring the dielectric composition represented by Formula 2 with a hydroxide solution.
一具現例において、前記製造されたナノシート状誘電体組成物から単結晶シートを剥離してよい。例えば、前記化学式2で表される誘電体組成物をテトラブチルアンモニウム水酸化物(TBAOH)溶液で撹拌して、化学式2のH+イオンがTBA+イオンに剥離してナノシート薄膜を製造してよい。 In one embodiment, a single crystal sheet may be peeled off from the prepared nanosheet-like dielectric composition. For example, the dielectric composition represented by the chemical formula 2 may be stirred in a tetrabutylammonium hydroxide (TBAOH) solution, and the H + ions of the chemical formula 2 may be separated into TBA + ions to produce a nanosheet thin film. .
一具現例において、前記化学式3で表される組成を有する誘電体は、化学式2で表される組成を有するバルク誘電体が剥離されたナノシート状を有してよい。 In one embodiment, the dielectric having the composition represented by Chemical Formula 3 may have a nanosheet shape from which a bulk dielectric having the composition represented by Chemical Formula 2 has been peeled off.
具体的に、H+イオンがCaxLiyNb4O13層の間に挿入されて層状構造を有している本発明のHCaxLiyNb4O13試片をテトラブチルアムモニウム(TBAOH)溶液で数日間撹拌すると、CaxLiyNb4O13層の間に存在しているH+イオンを、例えばTBA+イオンが安定化させ、バルク試片がコロイド化し、HCaxLiyNb4O13単結晶シートとして1枚ずつ剥離されるようになる。 Specifically, the HCa x Li y Nb 4 O 13 specimen of the present invention, which has a layered structure in which H + ions are inserted between the Ca x Li y Nb 4 O 13 layers, was mixed with tetrabutylammonium (TBAOH). ) When the solution is stirred for several days, the H + ions present between the Ca x Li y Nb 4 O 13 layers are stabilized by, for example, TBA + ions, and the bulk specimen becomes a colloid, forming HCa x Li y Nb 4 O 13 single crystal sheets are peeled off one by one.
前記化学式3で表される誘電体組成物は、ナノシート状誘電体組成物であって、ナノ厚さレベルのシート状に剥離することができ、このようなナノ厚さレベルでも高誘電率及び低誘電損失を示す。また、前記化学式3で表される誘電体組成物は線形的誘電特性を有する。 The dielectric composition represented by the chemical formula 3 is a nanosheet-like dielectric composition that can be peeled off into a nano-thickness sheet, and even at such a nano-thickness level, it has a high dielectric constant and a low dielectric constant. Indicates dielectric loss. Further, the dielectric composition represented by Formula 3 has linear dielectric characteristics.
一具現例において、前記仮焼は800~1200℃の温度範囲で行われてよい。好ましくは、900~1100℃で行われてよく、より好ましくは、1000~1100℃で行われてよい。前記仮焼温度が800℃未満であると、ペロブスカイト素材に合成されないことがあり、また1200℃を超える場合は、溶ける部分が生じることがある。 In one embodiment, the calcination may be performed at a temperature range of 800-1200°C. Preferably, the temperature may be 900 to 1100°C, more preferably 1000 to 1100°C. If the calcination temperature is less than 800°C, it may not be synthesized into a perovskite material, and if it exceeds 1200°C, melted portions may occur.
一具現例において、形成された化学式1で表される組成を有する誘電体を1100~1150℃の空気雰囲気下で焼結してよい。前記焼結温度が1100℃未満であると、誘電体素材の粒子の大きさが小さ過ぎることがあり、また1150℃を超える場合は、溶ける部分が生じることがある。 In one embodiment, the formed dielectric having the composition represented by Formula 1 may be sintered at 1100-1150° C. in an air atmosphere. If the sintering temperature is less than 1100°C, the size of the particles of the dielectric material may be too small, and if it exceeds 1150°C, melted portions may occur.
一具現例において、前記水酸化物溶液は特に限定されるものではないが、テトラブチルアンモニウム水酸化物(TBAOH)、テトラプロピルアンモニウム水酸化物(TPAOH)、テトラエチルアンモニウム水酸化物(TEAOH)、及びテトラメチルアンモニウム水酸化物(TMAOH)から構成される群より選択される一種以上の溶液であってよい。 In one embodiment, the hydroxide solution includes, but is not limited to, tetrabutylammonium hydroxide (TBAOH), tetrapropylammonium hydroxide (TPAOH), tetraethylammonium hydroxide (TEAOH), and The solution may be one or more types selected from the group consisting of tetramethylammonium hydroxide (TMAOH).
本発明に係る他の具現例において、化学式3で表される組成を有するナノシート状の誘電体を電気泳動法又はラングミュア・ブロジェット法にてナノシート薄膜を形成する、ナノシート薄膜の製造方法が提供される。 In another embodiment of the present invention, there is provided a method for producing a nanosheet thin film, which comprises forming a nanosheet thin film using an electrophoresis method or a Langmuir-Blodgett method using a nanosheet-like dielectric material having a composition represented by chemical formula 3. Ru.
[化学式3]
CaxLiyNb4O13
(前記式中、xは1.80≦x≦2.20、yは0.80≦y≦1.20 x+y=3)
具体的に、化学式3で表されるナノシート状の誘電体を有し、電気泳動法又はラングミュア・ブロジェット法(Langmuir-Blodgett、以下、LB法)にてナノ単層薄膜又はナノシートが積層された多層薄膜を形成してよい。ナノシート薄膜を形成するための方法は、例えば、LBトラフ(Langmuir-Blodgett trough)の水面上に剥離されたナノシートを分散して規則的なナノ構造の単層膜を形成するようにバリアを用いて圧縮し、Au、Pt、ITO、SROなどの金属又は酸化物電極が蒸着された適宜な基板を水平又は垂直下降させて単層膜を転移させる過程を含んでよい。
[Chemical formula 3]
Ca x Li y Nb 4 O 13
(In the above formula, x is 1.80≦x≦2.20, y is 0.80≦y≦1.20 x+y=3)
Specifically, it has a nanosheet-like dielectric represented by chemical formula 3, and nano single-layer thin films or nanosheets are stacked by electrophoresis or Langmuir-Blodgett (hereinafter referred to as LB method). Multilayer thin films may be formed. A method for forming a thin film of nanosheets includes, for example, using a barrier to disperse exfoliated nanosheets on the water surface of a Langmuir-Blodgett trough to form a monolayer film with a regular nanostructure. The method may include a process of compressing and horizontally or vertically lowering a suitable substrate on which a metal or oxide electrode such as Au, Pt, ITO, or SRO is deposited to transfer a single layer film.
一方、電気泳動法及びLB法をにて単層膜或いは多層膜も作製することができる。このように作製されたCLNOナノシート膜はナノレベルで今後の次世代デバイスに適用することができる。 On the other hand, a single layer film or a multilayer film can also be produced by the electrophoresis method and the LB method. The CLNO nanosheet film produced in this way can be applied to future next generation devices at the nano level.
実施例
以下、実施例を挙げて本発明の構成及び効果をより具体的に説明する。なお、これらの実施例は本発明に関する理解を助けるために例示の目的で提供されるだけのものであり、本発明の範疇及び範囲が下記の実施例によって制限されるものではない。
Examples Hereinafter, the structure and effects of the present invention will be explained in more detail with reference to Examples. It should be noted that these Examples are merely provided for illustrative purposes to aid understanding of the present invention, and the scope and scope of the present invention are not limited by the following Examples.
実施例1:KCa2LiNb4O13物質の合成
KCa2LiNb4O13で表される主な成分の組成物を満たす誘電体セラミック物質を合成するために、純度99%以上のK2CO3、CaCO3、Nb2O5、及びLiNbO3を用意する。
Example 1: Synthesis of KCa 2 LiNb 4 O 13 material In order to synthesize a dielectric ceramic material satisfying the composition of the main components expressed as KCa 2 LiNb 4 O 13 , K 2 CO 3 with a purity of 99% or more was used. , CaCO 3 , Nb 2 O 5 , and LiNbO 3 are prepared.
次に、一般式KCa2Nb3O10を満たす組成比にて各物質を秤量した後、エタノールを溶媒にしてジルコニアボールとともにボールミル工程にて24時間湿式混合する。その後、100℃のオーブンでエタノールを全て乾燥してから乾式粉砕し、粉砕された物質を1200℃で10時間仮焼してKCa2Nb3O10を得る。 Next, each substance is weighed at a composition ratio that satisfies the general formula KCa 2 Nb 3 O 10 , and then wet mixed with zirconia balls in a ball mill process for 24 hours using ethanol as a solvent. Thereafter, all the ethanol was dried in an oven at 100°C, and then dry pulverization was performed, and the pulverized material was calcined at 1200°C for 10 hours to obtain KCa 2 Nb 3 O 10 .
得られたKCa2Nb3O10とLiNbO3を一般式KCa2LiNb4O13を満たす組成比にて秤量し、エタノールを溶媒にしてジルコニアボールとともにボールミル工程にて24時間湿式混合する。800~1200℃の温度で仮焼する。 The obtained KCa 2 Nb 3 O 10 and LiNbO 3 are weighed at a composition ratio that satisfies the general formula KCa 2 LiNb 4 O 13 , and are wet mixed together with zirconia balls in a ball milling process for 24 hours using ethanol as a solvent. Calcinate at a temperature of 800-1200°C.
得られたKCa2LiNb4O13誘電体組成物を100kgf/cm2の圧力で直径12mm、高さ0.5~1mmのペレットに成形し、1100~1150℃の空気雰囲気下で焼結(sintering)した。焼結されたペレット状のセラミック誘電体を測定するために、両端面に導電性ペーストを塗布し、600℃で熱処理を施した。 The obtained KCa 2 LiNb 4 O 13 dielectric composition was formed into pellets with a diameter of 12 mm and a height of 0.5 to 1 mm under a pressure of 100 kgf/cm 2 and sintered in an air atmosphere at 1100 to 1150°C. )did. In order to measure the sintered pellet-shaped ceramic dielectric, a conductive paste was applied to both end faces and heat treated at 600°C.
試験例1:KCa2LiNb4O13誘電体特性
実施例1で用意されたニオブ酸カルシウムリチウム誘電体試片を、Agilent Technologies社のインピーダンス・アナライザ(Impedance Analyzer)で測定してその特性を確認し、その結果を図1~図4に示した。
Test Example 1: KCa 2 LiNb 4 O 13 dielectric properties The calcium lithium niobate dielectric specimen prepared in Example 1 was measured with an Impedance Analyzer from Agilent Technologies to confirm its properties. The results are shown in Figures 1 to 4.
図1は、実施例1に係るKCa2LiNb4O13のX線回折分析特性を示したものであって、横軸は2シータ(theta)、縦軸は回折ピークの強度を示している。これより仮焼温度の変化にも相の変化が大きくないことが分かる。しかし、900℃と1200℃の仮焼X線回折分析ピークは、八面体4層の構造と異なる層の物質が混在されていることが分かる。 FIG. 1 shows the X-ray diffraction analysis characteristics of KCa 2 LiNb 4 O 13 according to Example 1, where the horizontal axis shows 2 theta (theta) and the vertical axis shows the intensity of the diffraction peak. It can be seen from this that the phase change does not change significantly even when the calcination temperature changes. However, the calcined X-ray diffraction analysis peaks at 900° C. and 1200° C. indicate that the four-layer octahedral structure and materials in different layers are mixed together.
図2は、実施例1に係るKCa2LiNb4O13焼結体の走査電子顕微鏡写真を示している。図2から誘電体セラミック物質が層状構造を有していることを確認することができ、板状の粒子を形成したことが示されている。このような走査電子顕微鏡による測定結果は、先のX線回折分析ともよく符合する。 FIG. 2 shows a scanning electron micrograph of the KCa 2 LiNb 4 O 13 sintered body according to Example 1. It can be confirmed from FIG. 2 that the dielectric ceramic material has a layered structure, indicating that plate-shaped particles were formed. The measurement results obtained by such a scanning electron microscope agree well with the above-mentioned X-ray diffraction analysis.
図3は、実施例1に係るKCa2LiNb4O13焼結体の透過電子顕微鏡写真を示しており、これより焼結体が層あたり4層の単位格子を有していることを確認することができる。 FIG. 3 shows a transmission electron micrograph of the KCa 2 LiNb 4 O 13 sintered body according to Example 1, which confirms that the sintered body has a unit cell of 4 layers per layer. be able to.
次に、図4aと4bは、実施例1に係るKCa2LiNb4O13誘電特性を測定した結果を示している。仮焼は1000℃で、焼結は1100~1150℃で施して誘電率及び誘電損失を測定した結果である。誘電率及び誘電損失を測定した結果、周波数の変化に応じた安定した値を示していることが分かる。 Next, FIGS. 4a and 4b show the results of measuring the dielectric properties of KCa 2 LiNb 4 O 13 according to Example 1. Calcination was performed at 1000°C and sintering was performed at 1100 to 1150°C, and the dielectric constant and dielectric loss were measured. As a result of measuring the dielectric constant and dielectric loss, it can be seen that they exhibit stable values in response to changes in frequency.
また、図5aと5bは、Li挿入によるKCa2LiNb4O13(KCLNO)の誘電特性及び周波数の変化に応じた安定性を比べた結果を示している。図5aでは誘電定数を、図5bでは誘電損失値をそれぞれ示しており、Liを挿入して集合層が4層であるペロブスカイト層を有する場合(KCLNO)が、3層ペロブスカイト層を有する場合(KCa2Nb3O10、KCNO)やLiの代わりにNaを挿入する場合(KCa2NaNb4O13、KCNNO)に比べて、高い誘電特性及び周波数の変化に応じた優れた安定性を示すことを確認することができる。 Moreover, FIGS. 5a and 5b show the results of comparing the dielectric properties of KCa 2 LiNb 4 O 13 (KCLNO) with Li insertion and the stability according to changes in frequency. Figure 5a shows the dielectric constant, and Figure 5b shows the dielectric loss value. The case where the perovskite layer with Li inserted and four assembled layers is present (KCLNO) and the case where the perovskite layer is composed of three layers (KCa) are shown. 2 Nb 3 O 10 , KCNO) and the case where Na is inserted instead of Li (KCa 2 NaNb 4 O 13 , KCNNO), it has been shown to exhibit high dielectric properties and excellent stability in response to changes in frequency. It can be confirmed.
実施例2:HCa2LiNb4O13物質の合成
実施例1で合成されたKCa2LiNb4O13粉末を4MのHCl溶液で7日間マグネチック撹拌機を用いて撹拌してK+イオンをH+イオンで置換させる。置換済みの溶液は遠心分離機を用いてDI Waterで数回洗浄する。洗浄する間にPHメータを用いて溶液のPH濃度が中性に近づいたかを確認する。その後、65℃で24時間乾燥すると、HCa2LiNb4O13を得ることができる。
Example 2: Synthesis of HCa 2 LiNb 4 O 13 substance The KCa 2 LiNb 4 O 13 powder synthesized in Example 1 was stirred with a 4M HCl solution using a magnetic stirrer for 7 days to convert K + ions into H Replace with + ions. The replaced solution is washed several times with DI Water using a centrifuge. During washing, use a PH meter to check whether the PH concentration of the solution approaches neutrality. Then, by drying at 65° C. for 24 hours, HCa 2 LiNb 4 O 13 can be obtained.
実施例3:Ca2LiNb4O13物質の合成及び薄膜LBを用いた薄膜の蒸着
次に、実施例2で得られたHCa2LiNb4O13セラミック物質を用いてH+:TBA+=1:1の比でテトラブチルアムモニウム水酸化物を添加し、室温で7~14日間撹拌反応させて、組成式Ca2LiNb4O13で表されるペロブスカイトナノシートが分散された不透明のコロイド溶液を作製し、得られたコロイドのAFM写真を図6に示した。
Example 3: Synthesis of Ca 2 LiNb 4 O 13 material and deposition of thin film using thin film LB Next, using the HCa 2 LiNb 4 O 13 ceramic material obtained in Example 2, H + :TBA + =1 Tetrabutylammonium hydroxide was added at a ratio of :1, and the reaction was stirred at room temperature for 7 to 14 days to form an opaque colloidal solution in which perovskite nanosheets represented by the composition formula Ca 2 LiNb 4 O 13 were dispersed. An AFM photograph of the produced colloid is shown in FIG.
次いで、得られたナノシートコロイド溶液をLBトラフに満たされた超純水に分散させた。該分散溶液を展開後、水面の安定及び下層液の温度が一定になることを目的に30分間の安定化時間をもたせた後、Au、Pt、ITO、SRO、Nb-STOなどの用意した基板を利用して垂直又は水平下降させ、バリアは両側から表面圧力を維持させるだけの1mm/minの速度で圧縮して基板の表面に単層膜を転移させた。このような方法を数回繰り返して所望の層数を有するペロブスカイトナノシート薄膜を作製し、作製された薄膜はUV処理を施して有機ポリマーを除去した。 Next, the obtained nanosheet colloid solution was dispersed in ultrapure water filled in the LB trough. After developing the dispersion solution, a stabilization time of 30 minutes was allowed for the purpose of stabilizing the water surface and keeping the temperature of the lower liquid constant, and then a prepared substrate such as Au, Pt, ITO, SRO, Nb-STO, etc. The barrier was compressed from both sides at a speed of 1 mm/min to maintain surface pressure, thereby transferring a monolayer film onto the surface of the substrate. This method was repeated several times to produce a perovskite nanosheet thin film having a desired number of layers, and the produced thin film was subjected to UV treatment to remove the organic polymer.
図6a及び6bは、製造されたCa2LiNb4O13ナノシートのAFM写真を示し、図5から4層の単分子層を有するナノシートの姿を見ることができ、単分子層として存在することを確認することができる。 Figures 6a and 6b show AFM photographs of the produced Ca 2 LiNb 4 O 13 nanosheets, and from Figure 5 it can be seen that the nanosheets have four monolayers, indicating that they exist as a monolayer. It can be confirmed.
前述した本発明の実施例は本発明の技術的思想を限定すると解釈されてはいけない。本発明の保護範囲は請求の範囲に記載された事項によって制限され、本発明の技術分野における通常の知識を有する者であれば、本発明の技術的思想を種々の形態に改良変更することが可能である。したがって、このような改良及び変更が通常の知識を有する者にとって自明なことである限り、本発明の保護範囲に属するといえる。 The embodiments of the present invention described above should not be construed as limiting the technical idea of the present invention. The protection scope of the present invention is limited by the matters stated in the claims, and a person having ordinary knowledge in the technical field of the present invention can improve and change the technical idea of the present invention into various forms. It is possible. Therefore, it can be said that such improvements and changes fall within the protection scope of the present invention as long as they are obvious to a person with ordinary knowledge.
Claims (20)
[化学式1]
KCaxLiyNb4O13
(前記式中、xは1.80≦x≦2.20、yは0.80≦y≦1.20、x+y=3) A calcium lithium niobate dielectric composition comprising a calcium lithium niobate dielectric having a composition represented by Chemical Formula 1.
[Chemical formula 1]
KCa x Li y Nb 4 O 13
(In the above formula, x is 1.80≦x≦2.20, y is 0.80≦y≦1.20, x+y=3)
[化学式2]
HCaxLiyNb4O13
(前記式中、xは1.80≦x≦2.20、yは0.80≦y≦1.20、x+y=3) A calcium lithium niobate dielectric comprising a calcium lithium niobate dielectric having a composition represented by chemical formula 2, in which the K + ions of the calcium lithium niobate dielectric composition according to claim 1 are cationically substituted with H + ions. Dielectric composition.
[Chemical formula 2]
HCa x Li y Nb 4 O 13
(In the above formula, x is 1.80≦x≦2.20, y is 0.80≦y≦1.20, x+y=3)
[化学式3]
CaxLiyNb4O13
(前記式中、xは1.80≦x≦2.20、yは0.80≦y≦1.20、x+y=3) A calcium lithium niobate dielectric composition comprising a calcium lithium niobate dielectric having a composition represented by chemical formula 3, from which the H + ions of the calcium lithium niobate dielectric composition according to claim 2 have been removed.
[Chemical formula 3]
Ca x Li y Nb 4 O 13
(In the above formula, x is 1.80≦x≦2.20, y is 0.80≦y≦1.20, x+y=3)
[化学式1]
KCaxLiyNb4O13
(前記式中、xは1.80≦x≦2.20、yは0.80≦y≦1.20、x+y=3) A calcium lithium niobate dielectric composition comprising mixing and calcining a potassium precursor, a calcium precursor, a lithium precursor, and a niobium oxide to form a dielectric having a composition represented by Formula 1. How things are manufactured.
[Chemical formula 1]
KCa x Li y Nb 4 O 13
(In the above formula, x is 1.80≦x≦2.20, y is 0.80≦y≦1.20, x+y=3)
[化学式2]
HCaxLiyNb4O13
(前記式中、xは1.80≦x≦2.20、yは0.80≦y≦1.20、x+y=3) The method further comprises the step of stirring the dielectric represented by Formula 1 with an acidic solution to cationically replace K + ions with H + ions to form a dielectric having a composition represented by Formula 2. Item 14. A method for producing a calcium lithium niobate dielectric composition according to item 13.
[Chemical formula 2]
HCa x Li y Nb 4 O 13
(In the above formula, x is 1.80≦x≦2.20, y is 0.80≦y≦1.20, x+y=3)
[化学式3]
CaxLiyNb4O13
(前記式中、xは1.80≦x≦2.20、yは0.80≦y≦1.20、x+y=3) The calcium lithium niobate dielectric of claim 14, further comprising stirring the dielectric represented by Formula 2 with a hydroxide solution to form a dielectric having a composition represented by Formula 3. Method for producing body composition.
[Chemical formula 3]
Ca x Li y Nb 4 O 13
(In the above formula, x is 1.80≦x≦2.20, y is 0.80≦y≦1.20, x+y=3)
[化学式3]
CaxLiyNb4O13
(前記式中、xは1.80≦x≦2.20、yは0.80≦y≦1.20、x+y=3)
A method for producing a nanosheet thin film, which comprises forming a nanosheet thin film from a nanosheet dielectric having a composition represented by chemical formula 3 by an electrophoresis method or a Langmuir-Blodgett method.
[Chemical formula 3]
Ca x Li y Nb 4 O 13
(In the above formula, x is 1.80≦x≦2.20, y is 0.80≦y≦1.20, x+y=3)
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| JP2021063003A (en) | 2019-10-10 | 2021-04-22 | 三星電子株式会社Samsung Electronics Co.,Ltd. | Dielectric monolayer thin film, capacitor and semiconductor device including the same, and method of forming the dielectric monolayer thin film |
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| JP2012240884A (en) | 2011-05-19 | 2012-12-10 | National Institute For Materials Science | High dielectric nanosheet laminate, high dielectric element, and method for manufacturing high dielectric thin film element |
| JP2021063003A (en) | 2019-10-10 | 2021-04-22 | 三星電子株式会社Samsung Electronics Co.,Ltd. | Dielectric monolayer thin film, capacitor and semiconductor device including the same, and method of forming the dielectric monolayer thin film |
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| So Yeon Yoo,Design of dispersion-free dielectrics as engineering perovskite unit cells of KCa2Li(n-3)NbnO3n+1 ceramics,Ceramics International,2021年03月08日,vol.47,p.17331-17336 |
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