JP7412945B2 - semiconductor laser equipment - Google Patents

Description

The present disclosure relates to a semiconductor laser device.

Semiconductor laser devices equipped with a semiconductor laser element as a light source have been widely proposed. Patent Document 1 discloses an example of a conventional semiconductor laser device. The semiconductor laser device disclosed in this document includes a semiconductor laser element, a substrate on which the semiconductor laser element is mounted, a case surrounding the semiconductor laser element, and a light-transmitting cover that covers the case.

Japanese Patent Application Publication No. 2015-122378

When the semiconductor laser device is mounted on an electronic device or the like, it is preferable that the semiconductor laser device be smaller.

The present disclosure was conceived under the above circumstances, and an object of the present disclosure is to provide a semiconductor laser device that can be miniaturized.

A semiconductor laser device provided by the present disclosure includes a semiconductor laser element including a first surface and a second surface facing opposite to the first surface in the thickness direction, and an electrical connection with the semiconductor laser element. Transmits light emitted from one or more connected leads and the semiconductor laser device, covers at least a portion of the first surface of the semiconductor laser device, covers at least a portion of the lead, and at least partially and a resin exposing the.

According to the semiconductor laser device of the present disclosure, miniaturization can be achieved.

Other features and advantages of the present disclosure will become more apparent from the detailed description given below with reference to the accompanying drawings.

FIG. 1 is a perspective view showing a semiconductor laser device according to a first embodiment of the present disclosure. FIG. 1 is a plan view showing a semiconductor laser device according to a first embodiment of the present disclosure. FIG. 1 is a front view showing a semiconductor laser device according to a first embodiment of the present disclosure. FIG. 1 is a side view showing a semiconductor laser device according to a first embodiment of the present disclosure. 3 is a sectional view taken along line VV in FIG. 2. FIG. 3 is a cross-sectional view taken along line VI-VI in FIG. 2. FIG. 3 is a cross-sectional view taken along line VII-VII in FIG. 2. FIG. 3 is a cross-sectional view taken along line VIII-VIII in FIG. 2. FIG. 1 is a plan view of a main part showing an example of a method for manufacturing a semiconductor laser device according to a first embodiment of the present disclosure; FIG. 10 is a sectional view of a main part taken along line XX in FIG. 9. FIG. 1 is a plan view of a main part showing an example of a method for manufacturing a semiconductor laser device according to a first embodiment of the present disclosure; FIG. FIG. 12 is a sectional view of a main part taken along line XII-XII in FIG. 11. FIG. 1 is an enlarged cross-sectional view of a main part showing an example of a method for manufacturing a semiconductor laser device according to a first embodiment of the present disclosure. 12 is a sectional view taken along the line XIV-XIV in FIG. 11. FIG. 1 is a cross-sectional view of a main part showing an example of a method for manufacturing a semiconductor laser device according to a first embodiment of the present disclosure; FIG. 1 is a cross-sectional view of a main part showing an example of a method for manufacturing a semiconductor laser device according to a first embodiment of the present disclosure; FIG. 1 is a plan view of a main part showing an example of a method for manufacturing a semiconductor laser device according to a first embodiment of the present disclosure; FIG. 1 is a plan view of a main part showing an example of a method for manufacturing a semiconductor laser device according to a first embodiment of the present disclosure; FIG. 19 is a cross-sectional view of a main part taken along line XIX-XIX in FIG. 18. FIG. FIG. 2 is a cross-sectional view showing a first modification of the semiconductor laser device according to the first embodiment of the present disclosure. FIG. 7 is a cross-sectional view showing a second modification of the semiconductor laser device according to the first embodiment of the present disclosure. FIG. 7 is a cross-sectional view showing a third modification of the semiconductor laser device according to the first embodiment of the present disclosure. FIG. 2 is a plan view showing a semiconductor laser device according to a second embodiment of the present disclosure. FIG. 7 is a front view showing a semiconductor laser device according to a second embodiment of the present disclosure. 24 is a sectional view taken along line XXV-XXV in FIG. 23. FIG. FIG. 2 is an enlarged cross-sectional view of a main part of a semiconductor laser device according to a second embodiment of the present disclosure. FIG. 2 is an enlarged cross-sectional view of a main part of a semiconductor laser device according to a second embodiment of the present disclosure. 24 is a cross-sectional view taken along line XXVIII-XXVIII in FIG. 23. FIG. FIG. 7 is a plan view of main parts showing an example of a method for manufacturing a semiconductor laser device according to a second embodiment of the present disclosure. FIG. 7 is a plan view of a main part showing another example of a method for manufacturing a semiconductor laser device according to a second embodiment of the present disclosure. FIG. 7 is a plan view showing a semiconductor laser device according to a third embodiment of the present disclosure. 32 is a sectional view taken along the line XXXII-XXXII in FIG. 31. FIG. 32 is a sectional view taken along the line XXXIII-XXXIII in FIG. 31. FIG. 32 is a cross-sectional view taken along line XXXIV-XXXIV in FIG. 31. FIG. FIG. 7 is a cross-sectional view showing a first modification of the semiconductor laser device according to the third embodiment of the present disclosure. FIG. 7 is a cross-sectional view showing a second modification of the semiconductor laser device according to the third embodiment of the present disclosure. FIG. 7 is a plan view showing a semiconductor laser device according to a fourth embodiment of the present disclosure. 38 is a sectional view taken along the line XXXVIII-XXXVIII in FIG. 37. FIG. 38 is a sectional view taken along line XXXIX-XXXIX in FIG. 37. FIG. FIG. 7 is a plan view showing a first modification of the semiconductor laser device according to the fourth embodiment of the present disclosure. FIG. 7 is a plan view showing a semiconductor laser device according to a fifth embodiment of the present disclosure. 42 is a cross-sectional view taken along line XLII-XLII in FIG. 41. FIG. FIG. 7 is a plan view showing a semiconductor laser device according to a sixth embodiment of the present disclosure. 44 is a cross-sectional view taken along line XLIV-XLIV in FIG. 43. FIG. FIG. 7 is a plan view showing a semiconductor laser device according to a seventh embodiment of the present disclosure. 46 is a cross-sectional view taken along the XLVI-XLVI line in FIG. 45. FIG. FIG. 7 is a plan view showing a semiconductor laser device according to an eighth embodiment of the present disclosure. 48 is a cross-sectional view taken along line XLVIII-XLVIII in FIG. 47. FIG. 48 is a cross-sectional view taken along line XLIX-XLIX in FIG. 47. FIG. FIG. 7 is a plan view showing a first modification of the semiconductor laser device according to the eighth embodiment of the present disclosure. FIG. 7 is a plan view showing a semiconductor laser device according to a ninth embodiment of the present disclosure. 52 is a cross-sectional view taken along line LII-LII in FIG. 51. FIG. FIG. 7 is a plan view showing a first modification of the semiconductor laser device according to the ninth embodiment of the present disclosure.

Hereinafter, preferred embodiments of the present disclosure will be specifically described with reference to the drawings.

Terms such as "first", "second", "third", etc. in this disclosure are used merely as labels and are not necessarily intended to attach a permutation to those objects.

<First embodiment>
1 to 9 show a semiconductor laser device according to a first embodiment of the present disclosure. The semiconductor laser device A1 of this embodiment includes a plurality of leads 1, a semiconductor laser element 2, a plurality of wires 3, a first insulating film 41, and a resin 6.

FIG. 1 is a perspective view showing a semiconductor laser device A1. FIG. 2 is a plan view showing the semiconductor laser device A1. FIG. 3 is a front view showing the semiconductor laser device A1. FIG. 4 is a side view showing the semiconductor laser device A1. FIG. 5 is a sectional view taken along line VV in FIG. 2. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. FIG. 9 is an enlarged sectional view of a main part showing the semiconductor laser element of the semiconductor laser device A1. Note that the x direction corresponds to the first direction of the present disclosure, the y direction corresponds to the second direction of the present disclosure, and the z direction corresponds to the thickness direction of the present disclosure. Moreover, the state when viewed from the z direction may be referred to as a planar view.

In this embodiment, the plurality of leads 1 include a first lead 1A and a second lead 1B. Note that the number of leads 1 in the present disclosure is not particularly limited, and may be one or more. The material of the first lead 1A and the second lead 1B is not particularly limited, and is made of metal such as Cu, Fe, Ni, etc., for example. Further, a plating layer may be provided on a part or the entire surface of the first lead 1A and the second lead 1B. Examples of the plating layer include single-layer or multi-layer plating layers made of metals such as Au, Ti, Ni, Ag, and Sn. The dimensions of the first lead 1A and the second lead 1B are not particularly limited, and in the illustrated example, the dimension in the z direction (thickness) is, for example, about 50 μm.

In this embodiment, the first lead 1A includes a first surface 11A, a second surface 12A, a first side 13A, a second side 14A, a third side 15A, a fourth side 16A, an extension part 111A, an extension part 112A and an extension portion 113A.

The first surface 11A is a surface facing one side in the z direction, and in the illustrated example, is a plane perpendicular to the z direction. The second surface 12A is a surface facing the other side in the z direction opposite to the first surface 11A, and in the illustrated example, is a plane perpendicular to the z direction. The shapes of the first surface 11A and the second surface 12A are not particularly limited, and in the illustrated example, they have a shape that extends long in the y direction.

The first side 13A, the second side 14A, the third side 15A, and the fourth side 16A face different directions in plan view. Specific portions that constitute the first side 13A, second side 14A, third side 15A, and fourth side 16A in plan view include, for example, the outer edge of the first surface 11A. In this embodiment, the first side 13A, the second side 14A, the third side 15A, and the fourth side 16A are configured by an outer edge of the first surface 11A and a surface connected to the outer edge and along the z direction. has been done. In the following description, the first side 13A, the second side 14A, the third side 15A, and the fourth side 16A also serve as explanations of the surfaces that constitute them. The same applies to other modifications and embodiments, unless otherwise specified.

The first side 13A extends in the x direction and is located on one side in the y direction. The second side 14A faces the other side opposite to the first side 13A in the y direction, and extends in the x direction. The third side 15A is located between the first side 13A and the second side 14A in the y direction, and extends in the y direction. The fourth side 16A is located between the first side 13A and the second side 14A in the y direction, faces opposite to the third side 15A in the x direction, and extends in the y direction.

The extending portion 111A is a portion extending from the first side 13A to one side in the y direction. The extending portion 111A has a part of the first surface 11A. Further, the extending portion 111A is located on one side in the z direction (the side toward which the first surface 11A faces) than the second surface 12A.

The extending portion 112A is a portion extending from the second side 14A to the other side in the y direction. The extending portion 112A has a part of the first surface 11A. Further, the extending portion 112A is located on one side in the z direction (the side toward which the first surface 11A faces) rather than the second surface 12A.

The extending portion 113A is a portion extending from the third side 15A to the other side in the x direction. The extending portion 113A has a part of the first surface 11A. Further, the extending portion 113A is located on one side in the z direction (the side toward which the first surface 11A faces) than the second surface 12A.

The second lead 1B is spaced apart from the first lead 1A on one side in the x direction. The second lead 1B overlaps the first lead 1A when viewed in the x direction. In this embodiment, the second lead 1B includes a first surface 11B, a second surface 12B, a first side 13B, a second side 14B, a third side 15B, a fourth side 16B, an extension part 111B, an extension part 112B and an extension portion 113B.

The first surface 11B is a surface facing one side in the z direction, and in the illustrated example, is a plane perpendicular to the z direction. The second surface 12B is a surface facing the other side in the z direction opposite to the first surface 11B, and in the illustrated example, is a plane perpendicular to the z direction. The shapes of the first surface 11B and the second surface 12B are not particularly limited, and in the illustrated example, they have a shape that extends long in the y direction.

The first side 13B, the second side 14B, the third side 15B, and the fourth side 16B face different directions in plan view. Specific portions that constitute the first side 13B, second side 14B, third side 15B, and fourth side 16B in plan view include, for example, the outer edge of the first surface 11B. In this embodiment, the first side 13B, the second side 14B, the third side 15B, and the fourth side 16B are configured by an outer edge of the first surface 11B and a surface connected to the outer edge and along the z direction. has been done. In the following description, the first side 13B, the second side 14B, the third side 15B, and the fourth side 16B also serve as explanations of the surfaces that constitute them. The same applies to other modifications and embodiments, unless otherwise specified.

The first side 13B extends in the x direction and is located on one side in the y direction. The second side 14B faces the other side opposite to the first side 13B in the y direction, and extends in the x direction. The third side 15B is located between the first side 13B and the second side 14B in the y direction, and extends in the y direction. The fourth side 16B is located between the first side 13B and the second side 14B in the y direction, faces opposite to the third side 15B in the x direction, and extends in the y direction.

The extending portion 111B is a portion extending from the first side 13B to one side in the y direction. The extending portion 111B has a part of the first surface 11B. Further, the extending portion 111B is located on one side in the z direction (the side toward which the first surface 11B faces) than the second surface 12B.

The extending portion 112B is a portion extending from the second side 14B to the other side in the y direction. The extending portion 112B has a part of the first surface 11B. Further, the extending portion 112B is located on one side in the z direction (the side toward which the first surface 11B faces) than the second surface 12B.

The extending portion 113B is a portion extending from the third side 15B to one side in the x direction. The extending portion 113B has a part of the first surface 11B. Further, the extending portion 113B is located on one side in the z direction (the side toward which the first surface 11B faces) than the second surface 12B.

The semiconductor laser element 2 is a light source of the semiconductor laser device A1, and in this embodiment is arranged between the first lead 1A and the second lead 1B in plan view. The semiconductor laser element 2 overlaps the first lead 1A and the second lead 1B when viewed in the x direction.

The specific configuration of the semiconductor laser device 2 is not particularly limited, and in this embodiment, the semiconductor laser device 2 includes a substrate 201, a semiconductor layer 202, a first surface 21, a second surface 22, a first side 23, a second It has a side 24, a third side 25, a fourth side 26, a first electrode 27, and a second electrode 28.

The substrate 201 is a member that serves as the base of the semiconductor laser device 2, and is made of, for example, n-GaAs. The thickness of the substrate 201 is not particularly limited, and is, for example, about 90 μm, which is thicker than the first lead 1A and the second lead 1B. When viewed in the x direction, the substrate 201 protrudes to one side in the z direction with respect to the first lead 1A and the second lead 1B.

The semiconductor layer 202 is formed on one side of the substrate 201 in the z direction, and is a stack of multiple semiconductor layers. Laser light L is emitted from the semiconductor layer 202 on one side in the y direction. The thickness of the semiconductor layer 202 is not particularly limited, and is, for example, about 10 μm. Further, in this embodiment, the semiconductor layer 202 is arranged on the other side of the substrate 201 in the x direction (the part on the first lead 1A side). The semiconductor layer 202 is located on one side of the first lead 1A and the second lead 1B in the z direction when viewed in the x direction.

The first surface 21 is a surface facing one side in the z direction. In the illustrated example, the first surface 21 includes a portion constituted by a substrate 201 and a semiconductor layer 202. The second surface 22 is a surface facing opposite to the first surface 21 in the z direction, and is constituted by the substrate 201 in the illustrated example.

The first side 23, the second side 24, the third side 25, and the fourth side 26 face different directions in plan view. Specific parts that constitute the first side 23, the second side 24, the third side 25, and the fourth side 26 in plan view include, for example, the outer edge of the first surface 21. In this embodiment, the first side 23, the second side 24, the third side 25, and the fourth side 26 are configured by an outer edge of the first surface 21 and a surface connected to the outer edge and along the z direction. has been done. In the following description, the first side 23, the second side 24, the third side 25, and the fourth side 26 also serve as explanations of the surfaces that constitute them. The same applies to other modifications and embodiments, unless otherwise specified.

The first side 23 extends in the x direction and is located on one side in the y direction. The second side 24 faces the other side opposite to the first side 23 in the y direction, and extends in the x direction. The third side 25 is located between the first side 23 and the second side 24 in the y direction and extends in the y direction. The fourth side 26 is located between the first side 23 and the second side 24 in the y direction, faces opposite to the third side 25 in the x direction, and extends in the y direction. In this embodiment, the laser beam L emitted from the first side 23 has the strongest luminous intensity.

The first electrode 27 is formed on the first surface 21. In the illustrated example, the first electrode 27 overlaps the cap layer 250 of the semiconductor layer 202 in plan view and is electrically connected to the cap layer 250.

The second electrode 28 is formed on the first surface 21. In the illustrated example, the second electrode 28 is disposed on the substrate 201.

In the illustrated example, the first electrode 27 and the second electrode 28 are spaced apart from each other in the x direction. The first electrode 27 and the second electrode 28 overlap when viewed in the x direction. Further, the first electrode 27 and the second electrode 28 overlap the extension portion 113A and the extension portion 113B when viewed in the x direction.

The electrical polarities of the first electrode 27 and the second electrode 28 are not particularly limited, and in the illustrated example, the first electrode 27 is an anode electrode, and the second electrode 28 is a cathode electrode.

The first wire 3A is connected to the first electrode 27 arranged on the first surface 21 and the first lead 1A. The configuration of the first wire 3A is not particularly limited, and in the illustrated example, it has a first bonding part 31A, a second bonding part 32A, and a bent part 33A.

The first bonding portion 31A is arranged on the first electrode 27. The second bonding portion 32A is arranged on the first surface 11A of the first lead 1A. The bent portion 33A is located on one side of the first bonding portion 31A in the z direction, and is a part where a part of the first wire 3A is bent. In the illustrated example, the first wire 3A extends in the x direction. Further, the first wire 3A overlaps with the extension portion 113A when viewed in the x direction.

The second wire 3B is connected to the second electrode 28 arranged on the first surface 21 and the second lead 1B. The configuration of the second wire 3B is not particularly limited, and in the illustrated example, it has a first bonding part 31B, a second bonding part 32B, and a bent part 33B.

The first bonding part 31B is arranged on the second electrode 28. The second bonding portion 32B is arranged on the first surface 11B of the second lead 1B. The bent portion 33B is located on one side of the first bonding portion 31B in the z direction, and is a portion where a portion of the second wire 3B is bent. In the illustrated example, the second wire 3B extends in the x direction. Moreover, the second wire 3B overlaps with the first wire 3A when viewed in the x direction. The second wire 3B overlaps the extension portion 113B when viewed in the x direction.

The materials of the first wire 3A and the second wire 3B are not particularly limited, and are made of, for example, Au, Cu, Al, Ag, or the like. In the illustrated example, the first wire 3A and the second wire 3B are made of Au. Further, the number of first wires 3A and second wires 3B is not limited to the number in the illustrated example, and may be, for example, plural.

The first insulating film 41 is arranged on the second surface 22 of the semiconductor laser element 2. The first insulating film 41 is made of an insulating material such as epoxy resin, silicone resin, polyimide resin, or the like. In the illustrated example, the first insulating film 41 is larger than the semiconductor laser element 2 in plan view and extends from the semiconductor laser element 2. The other surface of the first insulating film 41 in the z direction is flush with the second surface 12A of the first lead 1A and the second surface 12B of the second lead 1B.

The resin 6 allows the laser light L emitted from the semiconductor laser element 2 to pass therethrough. The material of the resin 6 is not particularly limited, and is made of, for example, transparent epoxy resin or silicone resin. The resin 6 covers at least a portion of the first surface 21 of the semiconductor laser element 2, covers at least a portion of each of the first lead 1A and the second lead 1B, and exposes at least a portion of each. In this embodiment, the resin 6 includes a first surface 21, a surface forming the first side 23, a surface forming the second side 24, a surface forming the third side 25, and a surface forming the fourth side 26. is covered.

The shape of the resin 6 is not particularly limited, and in this embodiment, the first surface 61, the second surface 62, the third surface 63, the fourth surface 64, the fifth surface 65, the sixth surface 66, and the first side 601. , a second side 602, a third side 603, and a fourth side 604. The resin 6 covers part of the first surface 11A of the first lead 1A, the surface forming the first side 13A, the surface forming the second side 14A, the surface forming the third side 15A, and the fourth side 16A. It covers the constituent surfaces, a part of the extension part 111A, a part of the extension part 112A, and a part of the extension part 113A. The resin 6 covers part of the first surface 11B of the second lead 1B, the surface forming the first side 13B, the surface forming the second side 14B, the surface forming the third side 15B, and the fourth side 16B. It covers the constituent surfaces, a part of the extension part 111B, a part of the extension part 112B, and a part of the extension part 113B. The resin 6 covers the first wire 3A and the second wire 3B.

The first surface 61 is a surface facing one side in the z direction. The second surface 62 is a surface facing opposite to the first surface 61 in the z direction, and is constituted by the substrate 201 in the illustrated example. In this embodiment, the first surface 61 is smaller than the second surface 62 in plan view. The second surface 62 extends from the first surface 61 to both sides in the y direction when viewed in the z direction.

The third surface 63 is connected to one end of the first surface 61 in the y direction, and is located on the other side of the first surface 61 in the z direction. As shown in FIG. 7, the third surface 63 is located on one side of the second surface 62 in the z direction. In the illustrated example, the third surface 63 is inclined at an angle α1 with respect to the z direction. In the illustrated example, the laser beam L emitted from the semiconductor laser element 2 is emitted from the third surface 63.

The fourth surface 64 is connected to the other end of the first surface 61 in the y direction, and is located on the other side of the first surface 61 in the z direction. As shown in FIG. 7, the fourth surface 64 is located on one side of the second surface 62 in the z direction. In the illustrated example, the fourth surface 64 is inclined at an angle α2 with respect to the z direction. Angle α2 is larger than angle α1.

The fifth surface 65 is connected to the other end of the third surface 63 in the z direction (lower end in the figure) and extends to one side in the y direction. In the illustrated example, the fifth surface 65 is a plane that is perpendicular to the z direction. In the illustrated example, a portion of the first surface 11A of the first lead 1A and the first surface 11B of the second lead 1B are exposed from the resin 6 while being flush with the fifth surface 65. .

The sixth surface 66 is connected to the other end of the fourth surface 64 in the z direction (lower end in the figure) and extends to the other side in the y direction. In the illustrated example, the sixth surface 66 is a plane that is perpendicular to the z direction. In the illustrated example, a portion of the first surface 11A of the first lead 1A and the first surface 11B of the second lead 1B are exposed from the resin 6 and are flush with the sixth surface 66. .

The first side 601, the second side 602, the third side 603, and the fourth side 604 face different directions in plan view. Specific parts that constitute the first side 601, the second side 602, the third side 603, and the fourth side 604 in plan view are, for example, the outer edges of the first surface 61, the fifth surface 65, and the sixth surface 66. can be mentioned. In this embodiment, the first side 601, the second side 602, the third side 603, and the fourth side 604 are the outer edges and the outer edges of the first surface 61, the fifth surface 65, and the sixth surface 66. It is constituted by a plane connected to and along the z direction. In the following description, the first side 601, the second side 602, the third side 603, and the fourth side 604 also serve as explanations of the surfaces that constitute them. The same applies to other modifications and embodiments, unless otherwise specified.

The first side 601 extends in the x direction and is located on one side in the y direction. The second side 602 faces the other side opposite to the first side 601 in the y direction, and extends in the x direction. The third side 603 is located between the first side 601 and the second side 602 in the y direction and extends in the y direction. The fourth side 604 is located between the first side 601 and the second side 602 in the y direction, faces opposite to the third side 603 in the x direction, and extends in the y direction.

The second surface 12A of the first lead 1A, the second surface 12B of the second lead 1B, and the other side surface of the first insulating film 41 in the z direction are exposed from the resin 6 so as to be flush with the second surface 62.

The end surfaces of each of the extending portions 111A and 111B are exposed from the resin 6 so as to be flush with the surface forming the first side 601.

The end surfaces of each of the extending portions 112A and 112B are exposed from the resin 6 so as to be flush with the surface forming the second side 602.

The distal end surface of the extending portion 113A is exposed from the resin 6 so as to be flush with the surface constituting the third side 603. The distal end surface of the extending portion 114A is exposed from the resin 6 so as to be flush with the surface forming the fourth side 604.

Next, an example of a method for manufacturing the semiconductor laser device A1 will be described below with reference to FIGS. 9 to 19.

First, as shown in FIGS. 9 and 10, a support member S1 is prepared. The support member S1 is a plate-like member having a flat surface. Also, a lead frame 10 is prepared. The lead frame 10 includes a frame 101 that supports a plurality of first leads 1A and a plurality of second leads 1B, which are capable of manufacturing a plurality of semiconductor laser devices A1. The frame 101 includes, for example, a plurality of strip portions 101x and a plurality of strip portions 101y. The plurality of strips 101x each extend in the x direction and are spaced apart from each other in the y direction. Each of the plurality of strips 101y extends in the y direction, and is spaced apart from each other when viewed in the x direction. The plurality of band-like parts 101x and the plurality of band-like parts 101y are connected at positions where they intersect with each other. The extension parts 111A, 112A, and 113A of the plurality of first leads 1A and the extension parts 111B, extension part 112B, and extension part 113B of the plurality of second leads 1B are connected to the frame 101. has been done.

Lead frame 10 is supported by support member S1. The lead frame 10 is supported appropriately by, for example, adhesion to the support member S1.

Next, as shown in FIGS. 11 to 14, the semiconductor laser element 2 is placed on the support member S1. The semiconductor laser element 2 is arranged between the first lead 1A and the second lead 1B. In this embodiment, the semiconductor laser element 2 is placed on the support member S1 with the first insulating film 41 interposed therebetween. As a result, the second surface 12A of the first lead 1A and the second surface 12B of the second lead 1B are flush with the lower surface of the first insulating film 41 in the z direction. Further, the first wire 3A is connected to the first electrode 27 and the first lead 1A, and the second wire 3B is connected to the second electrode 28 and the second lead 1B. For example, a capillary is used to connect the first wire 3A and the second wire 3B.

Next, as shown in FIG. 15, the support member S1, the lead frame 10, the plurality of semiconductor laser elements 2, etc. are sandwiched between the mold M1 and the mold M2. The mold M2 supports the support member S1 from the other side in the z direction, and has, for example, a flat surface. The mold M1 is arranged on one side in the z direction with respect to the support member S1, and has a plurality of cavities M11. The cavity M11 is, for example, a recess that extends long when viewed in the x direction, and defines a space that accommodates the plurality of semiconductor laser elements 2, the first wire 3A, and the second wire 3B. In the illustrated example, the cavity M11 has a first surface M111 and a second surface M112. The first surface M111 is a surface located on one side in the y direction with respect to the semiconductor laser element 2, and is inclined at an angle α1 with respect to the z direction. The second surface M112 is a surface located on the other side in the y direction with respect to the semiconductor laser element 2, and is inclined at an angle α2 with respect to the z direction. The lower surface of the mold M1 in the z direction contacts the first surface 11A of the first lead 1A and the first surface 11B of the second lead 1B.

Next, as shown in FIG. 16, a resin material is injected between the molds M1 and M2 and is cured. As a result, resin 60 shown in FIG. 17 is obtained. The resin 60 is an intermediate member containing a plurality of resins 6. In this example, the surface defined by the first surface M111 becomes the third surface 63, and the surface defined by the second surface M112 becomes the fourth surface 64. Further, the surfaces defined by the lower surface of the mold M1 in the z direction become the fifth surface 65 and the sixth surface 66.

Next, as shown in FIGS. 18 and 19, the lead frame 10 and the resin 60 are cut along the plurality of cutting lines CLx and the plurality of cutting lines CLy. This cutting may be performed by cutting the supporting member S1 together with the lead frame 10 and the resin 60, or by removing the supporting member S1 from the lead frame 10 and the resin 60 prior to cutting. good. Further, cutting along the two cutting lines CLx sandwiched between adjacent semiconductor laser elements 2 may be performed by cutting twice along each cutting line CLx, or cutting along the two cutting lines CLx sandwiched between the two cutting lines CLx may be performed. Alternatively, a cutting method may be used in which the removed area is removed all at once. Similarly, cutting along two cutting lines CLy sandwiched between adjacent semiconductor laser elements 2 may be performed by cutting twice along each cutting line CLy, or by cutting along two cutting lines CLy. Alternatively, a cutting method may be used in which the area sandwiched between the two areas is removed all at once.

Through the above steps, a plurality of semiconductor laser devices A1 can be obtained.

Next, the operation of the semiconductor laser device A1 will be explained.

According to the present embodiment, for example, a substrate having a base material supporting the semiconductor laser element 2 and a wiring pattern serving as a conduction path to the semiconductor laser element 2 is not provided. The volumes of the first lead 1A and the second lead 1B can be made smaller than the volume of the base material. Therefore, it is possible to downsize the semiconductor laser device A1.

The semiconductor laser element 2 overlaps the first lead 1A and the second lead 1B when viewed in the x direction. That is, the semiconductor laser element 2, the first lead 1A, and the second lead 1B are not separated in the z direction, but have a positional relationship in which the regions occupied in the z direction overlap with each other. Thereby, the dimension of the semiconductor laser device A1 in the z direction can be reduced.

The thickness of the substrate 201 is thicker than the thickness of the first lead 1A and the second lead 1B. Therefore, as shown in FIGS. 3 and 7, the semiconductor layer 202 is located on one side in the z direction (upper side in the figure) with respect to the first lead 1A and the second lead 1B. The third surface 63 of the resin 6 is located on one side in the z direction of the first surface 11A of the first lead 1A and the first surface 11B of the second lead 1B, and overlaps with the semiconductor layer 202 when viewed in the y direction. Thereby, the laser beam L from the semiconductor layer 202 can be emitted from the third surface 63. As shown in FIGS. 15 and 16, the third surface 63 is formed by the first surface M111 of the mold M1. Therefore, the third surface 63 can be finished as a relatively smooth surface with significantly low surface roughness. This is suitable for increasing the output efficiency of the laser beam L.

The angle α1 of the third surface 63 is smaller than the angle α2 of the fourth surface 64. Thereby, it is possible to suppress the laser beam L from the semiconductor laser element 2 from being unduly refracted by the third surface 63. Further, when weak light is emitted from the semiconductor laser element 2 to the other side in the y direction, since the fourth surface 64 is tilted, it can be suppressed from being reflected to one side in the y direction.

Since the first wire 3A and the second wire 3B have the bent portion 33A and the bent portion 33B, it is possible to reduce the z-direction dimension of the first wire 3A and the second wire 3B. This is advantageous for downsizing the semiconductor laser device A1 in the z direction.

20-53 illustrate variations and other embodiments of the present disclosure. In addition, in these figures, the same or similar elements as in the above embodiment are given the same reference numerals as in the above embodiment.

<First embodiment first modification>
FIG. 20 is a cross-sectional view showing a first modification of the semiconductor laser device A1. The semiconductor laser device A11 of this modification differs from the semiconductor laser device A1 described above in that it does not include the first insulating film 41. In the semiconductor laser device A11, the second surface 22 of the semiconductor laser element 2 is exposed from the resin 6 and is flush with the second surface 62 of the resin 6.

This modification also provides the same effects as the semiconductor laser device A1. Further, in the following embodiments, unless otherwise specified, either a configuration including the first insulating film 41 or a configuration not including the first insulating film 41 can be adopted as appropriate.

<First embodiment second modification>
FIG. 21 is a sectional view showing a second modification of the semiconductor laser device A1. In the semiconductor laser device A12 of this modification, the structure of the resin 6 is different from the above-described example.

In the semiconductor laser device A12, the angle α1 that is the angle that the third surface 63 makes with the z direction is larger than the angle α2 that is the angle that the fourth surface 64 makes with the z direction, for example, 45°. Such a third surface 63 can reflect the laser light L traveling from the semiconductor laser element 2, and can cause the laser light L to travel toward the other side in the z direction (lower side in the figure).

Note that the reflection of the laser beam L by the third surface 63 may be total reflection due to the difference in refractive index between the resin 6 and air. Alternatively, as in the illustrated example, a configuration may be adopted in which the laser beam L is reflected by providing a reflective film 631 on the third surface 63. The structure of the reflective film 631 is not particularly limited, and is, for example, a thin film made of Al formed by a vapor deposition method.

According to the semiconductor laser device A12, the laser beam L can be emitted to the other side in the z direction (lower side in the figure). For example, in a circuit board (not shown) on which the semiconductor laser device A12 is mounted, a through hole is provided at a position overlapping the third surface 63 in plan view. Laser light L can be emitted through this through hole.

<First embodiment third modification>
FIG. 22 is a sectional view showing a third modification of the semiconductor laser device A1. In the semiconductor laser device A13 of this modification, the first bonding part 31A of the first wire 3A is arranged on the first surface 11A of the first lead 1A, and the second bonding part 32A is arranged on the first surface 11A of the first lead 1A. 1 electrode 27. Further, the second wire 3B 31B is arranged on the first surface 11B of the second lead 1B, and the second bonding part 32B is arranged on the second electrode 28 of the semiconductor laser element 2.

According to this modification, it is possible to further reduce the dimensions of the first wire 3A and the second wire 3B in the z direction, which is advantageous for downsizing the semiconductor laser device A13 in the z direction.

<Second embodiment>
FIG. 23 is a plan view showing a semiconductor laser device according to a second embodiment of the present disclosure. FIG. 24 is a front view showing a semiconductor laser device according to a second embodiment of the present disclosure. FIG. 25 is a cross-sectional view taken along line XXV-XXV in FIG. 23. FIG. 26 is an enlarged sectional view of a main part of a semiconductor laser device according to a second embodiment of the present disclosure. FIG. 27 is an enlarged sectional view of a main part showing a semiconductor laser device according to a second embodiment of the present disclosure. FIG. 28 is a sectional view taken along line XXVIII-XXVIII in FIG. 23.

The semiconductor laser device A2 of this embodiment differs from the embodiments described above mainly in the structure of the resin 6. The resin 6 of this embodiment has a first surface 61, a second surface 62, a first side 601, a second side 602, a third side 603, and a fourth side 604, and has a rectangular parallelepiped shape as a whole.

The first side 601 is configured by a plane that connects the first surface 61 and the second surface 62 and extends in the z direction. The second side 602 is configured by a plane that connects the first surface 61 and the second surface 62 and extends in the z direction. The third side 603 is configured by a plane that connects the first surface 61 and the second surface 62 and extends in the z direction. The fourth side 604 is configured by a plane that connects the first surface 61 and the second surface 62 and extends in the z direction.

As shown in FIG. 24, the semiconductor layer 202 overlaps the third surface 63 when viewed in the y direction. As shown in FIG. 25, the laser beam L emitted from the semiconductor laser element 2 is emitted from the surface forming the first side 601.

As shown in FIGS. 26 and 27, the surface roughness of the surface forming the first side 601 is smaller than the surface roughness of the surface forming the second side 602. The surface roughness of the surface constituting the first side 601 is such that, for example, the laser beam L is allowed to pass therethrough without being unduly scattered. Further, the surface roughness of the surface constituting the second side 602 is such that relatively weak light traveling from the semiconductor layer 202 of the semiconductor laser element 2 to the other side in the y direction can be appropriately scattered. .

Also according to this embodiment, the semiconductor laser device A2 can be made smaller. Further, in the present disclosure, the resin 6 has a third surface 63, the fourth surface 64, the fifth surface 65, and the sixth surface 66 as in the semiconductor laser device A1, and the resin 6 as in the semiconductor laser device A2. However, a configuration in which the third surface 63, the fourth surface 64, the fifth surface 65, and the sixth surface 66 are not provided can be adopted as appropriate.

The semiconductor laser device A2 is advantageous in achieving miniaturization in the y direction. Furthermore, by scattering the weak light from the semiconductor laser element 2 by the fourth surface 64, this weak light may erroneously travel to one side in the y direction and become noise light with respect to the emission of the laser light L. can be suppressed.

FIG. 29 is a plan view of essential parts showing an example of a method for manufacturing the semiconductor laser device A2. In this example, the resin 60 is formed into a flat shape having a first surface 61 and a second surface 62 without any irregularities. The first surface 61 extends over the entire surface of the resin 60. Lead frame 10 and resin 60 are cut along cutting line CL1x, cutting line CL2x, and cutting line Cly.

The cutting line CL1x is located on one side of the semiconductor laser element 2 in the y direction (the side from which the laser beam L is emitted). The cutting line CL2x is located on the other side of the semiconductor laser element 2 in the y direction. For cutting along the cutting line CL1x, for example, the advancing speed of the dicing blade used for cutting is set relatively slow. On the other hand, when cutting along the cutting line CL2x, for example, the advancing speed of the dicing blade is set relatively high. Thereby, the surface roughness of the surface forming the first side 601 formed by cutting along the cutting line CL1x is the same as the surface roughness of the surface forming the second side 602 formed by cutting along the cutting line CL2x. It becomes smaller than it is.

FIG. 30 is a plan view of main parts showing another example of the method for manufacturing the semiconductor laser device A2. In this example, the arrangement of semiconductor laser elements 2 adjacent to each other in the y direction is different from the example described above. In this example, the first sides 23 of adjacent semiconductor laser elements 2 in the y direction are arranged so as to face each other. The two cutting lines CL1x are adjacent to each other in the y direction. In this example, in order to delete the hatched area sandwiched between the two cutting lines CL1x all at once, cutting is performed using, for example, a dicing blade whose thickness is approximately the same as the dimension in the y direction of the hatched area. . Thereby, it is possible to form two third surfaces 63 that are adjacent to each other and face each other in the y direction.

<Third embodiment>
FIG. 31 is a plan view showing a semiconductor laser device according to a third embodiment of the present disclosure. FIG. 32 is a sectional view taken along line XXXII-XXXII in FIG. 31. FIG. 33 is a sectional view taken along the line XXXIII-XXXIII in FIG. 31. FIG. 34 is a sectional view taken along line XXXIV-XXXIV in FIG. 31.

The semiconductor laser device A3 of this embodiment is different from the above-described embodiments in the configuration of the semiconductor laser element 2. In this embodiment, the semiconductor layer 202 is formed on one side of the substrate 201 in the y direction. The first electrode 27 and the second electrode 28 are spaced apart from each other in the y direction. The first wire 3A and the second wire 3B each extend in the x direction and are spaced apart in the y direction.

According to this embodiment, it is advantageous to reduce the x-direction dimension of the semiconductor laser device A3.

<Third Embodiment First Modification>
FIG. 35 is a cross-sectional view showing a first modification of the semiconductor laser device A3. In the semiconductor laser device A31 of this modification, the first bonding portion 31B of the second wire 3B is covered with a resin portion 39. The resin portion 39 is made of, for example, a black resin that does not easily reflect light from the semiconductor laser element 2. By providing the resin portion 39, even if weak light is emitted from the semiconductor laser element 2 to the other side in the y direction, this light is absorbed by the resin portion 39 and is suppressed from being significantly reflected. be able to.

<Third Embodiment Second Modification>
FIG. 36 is a cross-sectional view showing a second modification example of the semiconductor laser device A3. In the semiconductor laser device A32 of this modification, the first lead 1A and the second lead 1B are arranged on the other side in the x direction with respect to the semiconductor laser element 2. The first lead 1A and the second lead 1B are arranged spaced apart from each other in the y direction.

The first lead 1A has an extending portion 111A and an extending portion 113B. The second lead 1B has an extending portion 112B and an extending portion 113B. The tip of the extending portion 111A is exposed from the resin 6 so as to be flush with the first side 601. The tip of the extending portion 112B is exposed from the resin 6 so as to be flush with the second side 602. The tips of the extending portions 113A and 113B are exposed from the resin 6 so as to be flush with the third side 603.

The first wire 3A and the second wire 3B each extend in the x direction and are spaced apart from each other in the y direction. In this modification, the second bonding part 32A and the second bonding part 32B are arranged on the other side in the x direction with respect to the first bonding part 31A and the first bonding part 31B.

According to this modification, it is advantageous to reduce the x-direction dimension of the semiconductor laser device A32.

<Fourth embodiment>
FIG. 37 is a plan view showing a semiconductor laser device according to a fourth embodiment of the present disclosure. FIG. 38 is a cross-sectional view taken along the line XXXVIII-XXXVIII in FIG. 37. FIG. 39 is a cross-sectional view taken along the line XXXIX-XXXIX in FIG. 37.

The semiconductor laser device A4 of this embodiment is different from the above-described embodiments in the configuration of the semiconductor laser element 2. The semiconductor laser device 2 of this embodiment has two semiconductor layers 202 and 203. The two semiconductor layers 202 and 203 are spaced apart from each other in the x direction on the substrate 201. Further, the semiconductor laser element 2 has a first electrode 27, a second electrode 28, and a third electrode 29. The first electrode 27 is arranged on the semiconductor layer 202 on the other side in the x direction (the left side in FIG. 37). The third electrode 29 is arranged on the semiconductor layer 203 on one side in the x direction (right side in the figure). The second electrode 28 is arranged on the substrate 201 between the first electrode 27 and the third electrode 29.

The semiconductor laser device A4 has a first wire 3A, a second wire 3B, and a third wire 3C. The first wire 3A is connected to the first electrode 27 and the first surface 11A of the first lead 1A. The second wire 3B is connected to the second electrode 28 and the first surface 11B of the second lead 1B. The third wire 3C is connected to the third electrode 29 and the first surface 11A of the first lead 1A. The third wire 3C has a first bonding part 31C, a second bonding part 32C, and a bent part 33C. The first bonding portion 31C is arranged on the third electrode 29. The second bonding portion 32A is arranged on the first surface 11A of the first lead 1A. The bent portion 33C is located on one side of the first bonding portion 31C in the z direction, and is a portion where a portion of the third wire 3C is bent.

In the illustrated example in which the first wire 3A, the second wire 3B, and the third wire 3C each extend in the x direction, the first wire 3A and the second wire 3B overlap when viewed in the x direction. The third wire 3C is located on the other side in the y direction with respect to the first wire 3A and the second wire 3B. The third wire 3C overlaps the first wire 3A and the second wire 3B when viewed in the y direction.

According to this embodiment as well, it is possible to downsize the semiconductor laser device A4. Further, by emitting the laser light L1 and the laser light L2 from the two semiconductor layers 202 and 203, high brightness can be achieved.

<Fourth embodiment>
FIG. 40 is a plan view showing a first modification of the semiconductor laser device A4. The semiconductor laser device A41 of this modification has a first lead 1A, a second lead 1B, and a third lead 1C. The first lead 1A, the third lead 1C, and the second lead 1B are spaced apart from each other in the x direction with the semiconductor laser element 2 in between. The first lead 1A and the third lead 1C are spaced apart from each other in the y direction.

In the present embodiment, the third lead 1C includes a first surface 11C, a second surface 12C (not shown), a first side 13C, a second side 14C, a third side 15C, a fourth side 16C, and an extension 112C. and an extension portion 113C.

The first surface 11C is a surface facing one side in the z direction, and in the illustrated example, is a plane perpendicular to the z direction. The second surface 12C is a surface facing the other side in the z direction opposite to the first surface 11C, and in the illustrated example, is a plane perpendicular to the z direction.

The first side 13C, the second side 14C, the third side 15C, and the fourth side 16C face different directions in plan view. Specific portions forming the first side 13C, second side 14C, third side 15C, and fourth side 16C in plan view include, for example, the outer edge of the first surface 11C. In this embodiment, the first side 13C, the second side 14C, the third side 15C, and the fourth side 16C are configured by an outer edge of the first surface 11C and a surface connected to the outer edge and along the z direction. has been done. In the following description, the first side 13C, the second side 14C, the third side 15C, and the fourth side 16C also serve as explanations of the surfaces that constitute them. The same applies to other modifications and embodiments, unless otherwise specified.

The first side 13C extends in the x direction and is located on one side in the y direction. The second side 14C faces the other side opposite to the first side 13C in the y direction, and extends in the x direction. The third side 15C is located between the first side 13C and the second side 14C in the y direction, and extends in the y direction. The fourth side 16C is located between the first side 13C and the second side 14C in the y direction, faces opposite to the third side 15C in the x direction, and extends in the y direction.

The extending portion 112C is a portion extending from the second side 14C to the other side in the y direction. The extending portion 112C has a part of the first surface 11C. Further, the extending portion 112C is located on one side in the z direction (the side toward which the first surface 11C faces) than the second surface 12C.

The extending portion 113C is a portion extending from the third side 15C to the other side in the x direction. The extending portion 113C has a part of the first surface 11C. Further, the extending portion 113C is located on one side in the z direction (the side toward which the first surface 11C faces) than the second surface 12C.

The first wire 3A is connected to the first electrode 27 and the first surface 11A of the first lead 1A. The second wire 3B is connected to the first electrode 27 and the first surface 11B of the second lead 1B. The third wire 3C is connected to the third electrode 29 and the first surface 11C of the third lead 1C.

According to this embodiment, the first electrode 27 and the third electrode 29 are connected to the first lead 1A and the third lead 1C, respectively. Thereby, it is possible to cause the semiconductor layer 202 and the semiconductor layer 203 to emit light individually.

<Fifth embodiment>
FIG. 41 is a plan view showing a semiconductor laser device according to the fifth embodiment of the present disclosure. FIG. 42 is a cross-sectional view taken along line XLII-XLII in FIG. 41.

In the semiconductor laser device A5 of this embodiment, the semiconductor laser element 2 is arranged on the second lead 1B.

The second lead 1B is spaced apart from the first lead 1A on one side in the y direction. The second lead 1B has an extending portion 111B, an extending portion 113B, and an extending portion 114B. The extending portion 111B extends from the first side 13B to one side in the y direction. The extending portion 113B extends from the third side 15B to the other side in the x direction. The extending portion 114B extends from the fourth side 16B to one side in the x direction.

The first electrode 27 is arranged on the first surface 21 formed by the semiconductor layer 202. The second electrode 28 is arranged on the second surface 22. The second electrode 28 and the first surface 11B of the second lead 1B are electrically connected by the first conductive portion 291. The first conductive portion 291 is, for example, solidified solder or Ag paste.

The semiconductor laser device A4 includes a first wire 3A. The first wire 3A is connected to the first electrode 27 and the first surface 11A of the first lead 1A.

According to this embodiment, it is advantageous to reduce the x-direction dimension and the y-direction dimension of the semiconductor laser device A5.

<Sixth embodiment>
FIG. 43 is a plan view showing a semiconductor laser device according to the sixth embodiment of the present disclosure. FIG. 44 is a cross-sectional view taken along line XLIV-XLIV in FIG. 43.

The semiconductor laser device A6 of this embodiment has a semiconductor laser device 2 having the same configuration as the semiconductor laser device 2 of the semiconductor laser device A5. In this embodiment, the second electrode 28 of the semiconductor laser element 2 is exposed from the resin 6 flush with the second surface 62 . The first wire 3A is connected to the first electrode 27 and the first surface 11A of the first lead 1A, similarly to the semiconductor laser device A5.

According to this embodiment, the dimension in the z direction can be further reduced compared to, for example, the semiconductor laser device A5.

<Seventh embodiment>
FIG. 45 is a plan view showing a semiconductor laser device according to a seventh embodiment of the present disclosure. FIG. 46 is a cross-sectional view taken along the XLVI-XLVI line in FIG. 45.

In the semiconductor laser device A7 of this embodiment, the configuration of the semiconductor laser element 2 is different from the embodiment described above. In the semiconductor laser device 2 of this embodiment, the semiconductor layer 202 is arranged on one side of the substrate 201 in the y direction on the other side of the substrate 201 in the z direction. The first surface 21 is composed of a substrate 201, and the second surface 22 is composed of a substrate 201 and a semiconductor layer 202.

The first electrode 27 is placed on a portion of the second surface 22 that is made up of the semiconductor layer 202, and the second electrode 28 is placed on a portion of the second surface 22 that is made up of the substrate 201. .

The first lead 1A and the second lead 1B are spaced apart from each other in the y direction. The semiconductor laser element 2 overlaps the first lead 1A and the second lead 1B in a plan view, and is arranged so as to straddle the first lead 1A and the second lead 1B. The first electrode 27 faces the first surface 11A of the first lead 1A, and is electrically connected to the first lead 1A by the first conductive portion 291. The second electrode 28 faces the first surface 11B of the second lead 1B, and is electrically connected to the second lead 1B by a second conductive portion 292.

According to this embodiment, by not including the first wire 3A, the second wire 3B, etc., the dimension of the semiconductor laser device A7 in the z direction can be further reduced.

<Eighth embodiment>
FIG. 47 is a plan view showing a semiconductor laser device according to the eighth embodiment of the present disclosure. FIG. 48 is a cross-sectional view taken along line XLVIII-XLVIII in FIG. 47. FIG. 49 is a cross-sectional view taken along line XLIX-XLIX in FIG. 47.

In the semiconductor laser device A8 of this embodiment, the first lead 1A and the second lead 1B are spaced apart from each other on both sides of the semiconductor laser element 2 in the x direction, for example, similarly to the semiconductor laser device A2.

The first lead 1A of this embodiment has a first surface 11A, a second surface 12A, a first side 13A, a second side 14A, a third side 15A, a fourth side 16A, and a third surface 17A. The first surface 11A has a smaller dimension in the x direction than the second surface 12A in plan view. The other end of the first surface 11A in the x direction and the other end of the second surface 12A in the x direction substantially match in plan view. The first surface 11A is exposed from the resin 6 so as to be flush with the resin 61. The second surface 12A is exposed from the resin 6 so as to be flush with the second surface 62. The third side 15A is exposed from the resin 6.

The third surface 17A is located between the first surface 11A and the second surface 12A in the z direction. In the illustrated example, the third surface 17A is connected to the first surface 11A and the second surface 12A. Further, in the illustrated example, the third surface 17A is connected to a surface forming the first side 13A and a surface forming the second side 14A. As shown in FIG. 48, the third surface 17A has a curved shape when viewed in the y direction. A portion of the third surface 17A on the second surface 12A side is a convex curved surface, and a portion on the first surface 11A side is a concave curved surface. The first wire 3A is connected to, for example, a portion of the third surface 17A facing one side in the z direction.

The second lead 1B of this embodiment has a first surface 11B, a second surface 12B, a first side 13B, a second side 14B, a third side 15B, a fourth side 16B, and a third surface 17B. The first surface 11B has a smaller dimension in the x direction than the second surface 12B in plan view. One end of the first surface 11B in the x direction and one end of the second surface 12B in the x direction substantially match in plan view. The first surface 11B is exposed from the resin 6 so as to be flush with the resin 61. The second surface 12B is exposed from the resin 6 so as to be flush with the second surface 62. The third side 15B is exposed from the resin 6.

The third surface 17B is located between the first surface 11B and the second surface 12B in the z direction. In the illustrated example, the third surface 17B is connected to the first surface 11B and the second surface 12B. Further, in the illustrated example, the third surface 17B is connected to a surface forming the first side 13B and a surface forming the second side 14B. As shown in FIG. 48, the third surface 17B has a curved shape when viewed in the y direction. A portion of the third surface 17B on the second surface 12B side is a convex curved surface, and a portion on the first surface 11B side is a concave curved surface. The second wire 3B is connected to, for example, a portion of the third surface 17B facing one side in the z direction.

According to this embodiment as well, it is possible to reduce the size of the semiconductor laser device A8. Further, the first surface 11A and the first surface 11B, and the second surface 12A and the second surface 12B are exposed from the resin 6 on both sides in the z direction. As a result, the semiconductor laser device A8 can arbitrarily select two mounting postures, for example, one using the first surface 11A and the first surface 11B, and the other using the second surface 12A and the second surface 12B. It is possible to choose.

<Eighth embodiment first modification>
FIG. 50 is a plan view showing a first modification of the semiconductor laser device A8. In the semiconductor laser device A81 of this modification, the first lead 1A has a fourth surface 18A. The fourth surface 18A is connected to the surfaces forming the second surface 12A and the third side 15A, and has a concave curved surface when viewed in the y direction. The second lead 1B has a fourth surface 18B. The fourth surface 18B is connected to the second surface 12B and the third side 15A, and has a concave curved surface when viewed in the y direction.

According to this modification as well, it is possible to reduce the size of the semiconductor laser device A81. Further, unlike the illustrated example, the fourth surfaces 18A, 18B may be formed as mounting electrodes by providing a plating layer on the fourth surfaces 18A, 18B. In this case, the semiconductor laser device A81 can be mounted vertically. As understood from this modification, the specific shapes of the first lead 1A and the second lead 1B can be set as appropriate.

<Ninth embodiment>
FIG. 51 is a plan view showing a semiconductor laser device according to a ninth embodiment of the present disclosure. FIG. 52 is a cross-sectional view taken along line LII-LII in FIG. 51.

The semiconductor laser device A9 of this embodiment includes a first lead 1A, a plurality of fifth leads 1E, a semiconductor laser element 2, a first wire 3A, a second wire 3B, a plurality of fifth wires 3E, a control element 71, and a resin 6. Equipped with.

The first lead 1A has, for example, a rectangular shape in plan view. Each of the plurality of fifth leads 1E has a rectangular shape in plan view, for example, and is arranged in the y direction. The plurality of fifth leads 1E are arranged on the other side in the x direction with respect to the first lead 1A.

The semiconductor laser element 2 and the control element 71 are arranged on the first lead 1A. The semiconductor laser element 2 is arranged on one side of the control element 71 in the x direction. In the semiconductor laser element 2, a first electrode 27 and a second electrode 28 are arranged on the first surface 21.

The control element 71 is, for example, an integrated circuit element having a function of controlling light emission of the semiconductor laser element 2. Control element 71 has a plurality of pads 711, for example. The plurality of pads 711 are arranged in two rows along the y direction.

The first wire 3A is connected to the first electrode 27 and the pad 711. The second wire 3B is connected to the second electrode 28 and the pad 711. The plurality of fifth wires 3E are individually connected to the plurality of 711 and the plurality of fifth leads 1E.

The resin 6 is made of a material that transmits the laser beam L from the semiconductor laser element 2, and covers the semiconductor laser element 2, the control element 71, and a portion of each of the first lead 1A and the plurality of fifth leads 1E. .

Also according to this embodiment, it is possible to reduce the size of the semiconductor laser device A9. Furthermore, by providing a control element 71 that controls light emission of the semiconductor laser element 2, wiring for connecting the semiconductor laser element 2 and the control element 71 can be provided on a circuit board (not shown) on which the semiconductor laser device A9 is mounted. It is not necessary to provide a pattern. Thereby, the size of the circuit board can be reduced.

<Ninth embodiment first modification>
FIG. 53 is a plan view showing a first modification of the semiconductor laser device A9. The semiconductor laser device A91 of this modification has a so-called QFN (Quad Flat No-Leads) type package structure, including a first lead 1A, a second lead 1B, a plurality of third leads 1C, a plurality of fourth leads 1D, It includes a plurality of fifth leads 1E and a sixth lead 1F, a semiconductor laser element 2, a first wire 3A, a second wire 3B, a plurality of fourth wires 3D, and a resin 6.

The first lead 1A and the second lead 1B have, for example, a band shape extending generally along the x direction, and are arranged spaced apart from each other in the y direction. The plurality of third leads 1C are arranged spaced apart from each other in the y direction along with the first leads 1A and the second leads 1B.

The plurality of fourth leads 1D are arranged in two rows along the x direction, and the first leads 1A and the second leads 1B are arranged in the y direction on the opposite side in the x direction. include.

The plurality of fifth leads 1E are arranged at the four corners of the semiconductor laser device A91. The sixth lead 1F is arranged in a region surrounded by the plurality of fourth leads 1D. The sixth lead 1F and the plurality of fifth leads 1E are connected to each other.

The semiconductor laser element 2 is arranged across a first lead 1A, a second lead 1B, and a plurality of third leads 1C. A first electrode 27 and a second electrode 28 are arranged on the first surface 21 of the semiconductor laser element 2 . The first electrode 27 is connected to the first lead 1A by a first wire 3A. The second electrode 28 is connected to the second lead 1B by a second wire 3B.

The control element 71 is arranged on the sixth lead 1F. Control element 71 has a plurality of pads 711. The plurality of pads 711 are individually connected to the plurality of fourth leads 1D by the plurality of fourth wires 3D.

Also according to this embodiment, it is possible to reduce the size of the semiconductor laser device A91.

The semiconductor laser device according to the present disclosure is not limited to the embodiments described above. The specific configuration of each part of the semiconductor laser device according to the present disclosure can be changed in design in various ways.

[Appendix 1]
a semiconductor laser element comprising a first surface and a second surface facing opposite to the first surface in the thickness direction;
one or more leads electrically connected to the semiconductor laser element;
a resin that transmits light emitted from the semiconductor laser device, covers at least a portion of the first surface of the semiconductor laser device, covers at least a portion of the lead, and exposes at least a portion of the lead;
A semiconductor laser device comprising:
[Appendix 2]
The semiconductor laser element includes at least a first side, a second side, a third side, and a fourth side as four sides facing in different directions when viewed from above in the thickness direction of the semiconductor laser element,
The first side of the semiconductor laser element extends in a first direction that is perpendicular to the thickness direction,
the second side of the semiconductor laser element faces opposite to the first side of the semiconductor laser element in a second direction that is perpendicular to the thickness direction and the first direction;
The third side of the semiconductor laser element is located between the first side of the semiconductor laser element and the second side of the semiconductor laser element in the second direction, and extends in the second direction. ,
The fourth side of the semiconductor laser element is located between the first side of the semiconductor laser element and the second side of the semiconductor laser element in the second direction, and facing the side opposite to the third side of the element,
The resin includes at least a first side, a second side, a third side, and a fourth side as four sides facing in mutually different directions in the plan view,
The semiconductor laser device according to appendix 1, wherein the first side of the semiconductor laser element, which emits the strongest light, faces the first side of the resin in plan view.
[Appendix 3]
The semiconductor laser device according to appendix 2, wherein a first electrode and a second electrode are formed on the first surface of the semiconductor laser element.
[Appendix 4]
The semiconductor laser device according to appendix 3, wherein the semiconductor laser element overlaps the lead when viewed in the first direction.
[Appendix 5]
The semiconductor laser device according to appendix 4, wherein the one or more leads include a first lead that faces the third side of the semiconductor laser element in the plan view.
[Appendix 6]
The semiconductor laser device according to appendix 5, wherein the one or more leads include a second lead that faces the fourth side of the semiconductor laser element in the plan view.
[Appendix 7]
The semiconductor laser device according to appendix 5, wherein the first electrode of the semiconductor laser element is connected to the first lead by a first wire.
[Appendix 8]
The semiconductor laser device according to appendix 7, wherein the first wire extends in the first direction.
[Appendix 9]
6. The semiconductor laser device according to appendix 6, wherein the first electrode of the semiconductor laser element is connected to the first lead by a first wire.
[Appendix 10]
The semiconductor laser device according to appendix 9, wherein the first wire extends in the first direction.
[Appendix 11]
The semiconductor laser device according to appendix 10, wherein the second electrode of the semiconductor laser element is connected to the second lead by a second wire.
[Appendix 12]
The semiconductor laser device according to appendix 11, wherein the second wire extends in the first direction on a side opposite to the first wire.
[Appendix 13]
The semiconductor laser device according to any one of appendices 3 to 12, wherein the first electrode and the second electrode overlap when viewed in the first direction.
[Appendix 14]
The semiconductor laser device according to any one of appendices 3 to 12, wherein the first electrode and the second electrode overlap when viewed in the second direction.
[Appendix 15]
The semiconductor laser according to appendix 12, wherein the first electrode and the second electrode overlap when viewed in the first direction, and the first wire and the second wire overlap when viewed in the first direction. Device.
[Appendix 16]
A first insulating film is provided on the second surface side of the semiconductor laser element,
16. The semiconductor laser device according to any one of appendices 1 to 15, wherein the first insulating film is exposed from the resin.
[Appendix 17]
16. The semiconductor laser device according to any one of appendices 1 to 15, wherein the second surface of the semiconductor laser element is exposed from the resin.
[Appendix 18]
The one or more leads include a first lead and a second lead separated from the first lead,
The semiconductor laser device according to appendix 2, wherein the semiconductor laser element is arranged at least on the second lead.
[Appendix 19]
19. The semiconductor laser device according to appendix 18, wherein the second surface of the semiconductor laser element faces the second lead and is joined to the second lead by a first conductive portion.
[Appendix 20]
20. The semiconductor laser device according to appendix 18 or 19, wherein the first lead faces the second side in the plan view.
[Appendix 21]
A first electrode is formed on the first surface of the semiconductor laser element,
21. The semiconductor laser device according to any one of appendices 18 to 20, wherein the first electrode and the first lead are connected by a first wire.
[Appendix 22]
The semiconductor laser device according to attachment 21, wherein the first wire intersects the second side of the semiconductor laser element in the plan view.
[Appendix 23]
23. The semiconductor laser device according to any one of appendices 18 to 22, wherein a second electrode is formed on the second surface of the semiconductor laser element.
[Appendix 24]
19. The semiconductor laser device according to appendix 18, wherein the semiconductor laser element is disposed straddling the first lead and the second lead.
[Appendix 25]
A first electrode and a second electrode are formed on the second surface of the semiconductor laser element,
The first electrode faces the first lead and is connected to the first lead by a first conductive part,
25. The semiconductor laser device according to attachment 24, wherein the second electrode faces the second lead and is joined to the second lead by a second conductive portion.

A1, A11, A12, A13, A2, A3, A31, A32, A4, A41, A5, A6, A7, A8, A81, A9, A91: Semiconductor laser device 1: Lead 1A: First lead 1B: Second lead 1C: Third lead 1D: Fourth lead 1E: Fifth lead 1F: Sixth lead 2: Semiconductor laser element 3: Wire 3A: First wire 3B: Second wire 3C: Third wire 3D: Fourth wire 3E: Fifth wire 10: Lead frame 11A: First surface 11B: First surface 11C: First surface 12A: Second surface 12B: Second surface 12C: Second surface 13A: First side 13B: First side 13C: First side 1st side 14A: 2nd side 14B: 2nd side 14C: 2nd side 15A: 3rd side 15B: 3rd side 15C: 3rd side 16A: 4th side 16B: 4th side 16C: 4th side 17A: 1st side 3rd side 17B: 3rd side 18A: 4th side 18B: 4th side 21: 1st side 22: 2nd side 23: 1st side 24: 2nd side 25: 3rd side 26: 4th side 27: 1st side 1 electrode 28 : 2nd electrode 29 : 3rd electrode 31A, 31B, 31C: First bonding part 32A, 32B, 32C: Second bonding part 33A, 33B, 33C: Bent part 39 : Resin part 41 : First insulating film 61 : First surface 62 : Second surface 63 : Third surface 64 : Fourth surface 65 : Fifth surface 66 : Sixth surface 71 : Control element 101 : Frame 101x : Band-shaped part 101y : Band-shaped part 111A : Extension part 111B : Extension part 112A : Extension part 112B : Extension part 112C : Extension part 113A : Extension part 113B : Extension part 113C : Extension part 114A : Extension part 114B : Extension part 201 : Substrate 202, 203 : Semiconductor layer 210 : First layer 291 : First conductive part 292 : Second conductive part 601 : First side 602 : Second side 603 : Third side 604 : Fourth side 631 : Reflective film 711 : Pads CL1x, CL2x, CLx, CLy, Cly: Cutting line L, L1, L2: Laser beam M1: Mold M11: Cavity M111: First surface M112: Second surface M2: Mold S1: Support member α1, α2: Angle

Claims (21)

a semiconductor laser element comprising a first surface and a second surface facing opposite to the first surface in the thickness direction;
one or more leads electrically connected to the semiconductor laser element;
a resin that transmits light emitted from the semiconductor laser device, covers at least a portion of the first surface of the semiconductor laser device, covers at least a portion of the lead, and exposes at least a portion of the lead;
Equipped with
The second surface of the semiconductor laser element is exposed from the resin ,
The resin has a third surface, a fourth surface, a fifth surface, and a sixth surface,
The third surface and the fourth surface are located opposite to each other in a second direction that is perpendicular to the thickness direction,
The fifth surface is connected to the third surface on the side where the second surface is located in the thickness direction, and extends to one side in the first direction that is perpendicular to the thickness direction,
The sixth surface is connected to the fourth surface in the thickness direction on the side where the second surface is located, and extends in the other side in the first direction perpendicular to the thickness direction. Device. 2. The semiconductor laser device according to claim 1 , wherein the angle that the third surface makes with the thickness direction is smaller than the angle that the fourth surface makes with the thickness direction. The semiconductor laser element includes at least a first side, a second side, a third side, and a fourth side as four sides facing in different directions when viewed from above in the thickness direction of the semiconductor laser element,
The first side of the semiconductor laser element extends in a first direction that is perpendicular to the thickness direction,
the second side of the semiconductor laser element faces opposite to the first side of the semiconductor laser element in a second direction that is perpendicular to the thickness direction and the first direction;
The third side of the semiconductor laser element is located between the first side of the semiconductor laser element and the second side of the semiconductor laser element in the second direction, and extends in the second direction. ,
The fourth side of the semiconductor laser element is located between the first side of the semiconductor laser element and the second side of the semiconductor laser element in the second direction, and facing the side opposite to the third side of the element,
The resin includes at least a first side, a second side, a third side, and a fourth side as four sides facing in mutually different directions in the plan view,
3. The semiconductor laser device according to claim 1, wherein the first side of the semiconductor laser element, where the emitted light is strongest, faces the first side of the resin in plan view. 4. The semiconductor laser device according to claim 3, wherein a first electrode and a second electrode are formed on the first surface of the semiconductor laser element. 5. The semiconductor laser device according to claim 4, wherein the semiconductor laser element overlaps the lead when viewed in the first direction. 6. The semiconductor laser device according to claim 5, wherein the one or more leads include a first lead that faces the third side of the semiconductor laser element in the plan view. 7. The semiconductor laser device according to claim 6, wherein the one or more leads include a second lead facing the fourth side of the semiconductor laser element in the plan view. 7. The semiconductor laser device according to claim 6, wherein the first electrode of the semiconductor laser element is connected to the first lead by a first wire. The semiconductor laser device according to claim 8, wherein the first wire extends in the first direction. 8. The semiconductor laser device according to claim 7, wherein the first electrode of the semiconductor laser element is connected to the first lead by a first wire. The semiconductor laser device according to claim 10, wherein the first wire extends in the first direction. 12. The semiconductor laser device according to claim 11, wherein the second electrode of the semiconductor laser element is connected to the second lead by a second wire. 13. The semiconductor laser device according to claim 12, wherein the second wire extends in the first direction on a side opposite to the first wire. 14. The semiconductor laser device according to claim 4, wherein the first electrode and the second electrode overlap when viewed in the first direction. 14. The semiconductor laser device according to claim 4, wherein the first electrode and the second electrode overlap when viewed in the second direction. The semiconductor according to claim 13, wherein the first electrode and the second electrode overlap when viewed in the first direction, and the first wire and the second wire overlap when viewed in the first direction. laser equipment. A first insulating film is provided on the second surface side of the semiconductor laser element,
17. The semiconductor laser device according to claim 1, wherein the first insulating film is exposed from the resin. 14. The semiconductor laser device according to claim 6, wherein the first lead has a portion exposed from the fifth surface. 19. The semiconductor laser device according to claim 18, wherein the first lead has a portion exposed from the sixth surface. 8. The semiconductor laser device according to claim 7, wherein the second lead has a portion exposed from the fifth surface. 21. The semiconductor laser device according to claim 20, wherein the second lead has a portion exposed from the sixth surface.

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