JP7417666B2 - Forming method, article manufacturing method, program, system, and lithographic apparatus - Google Patents

Description

The present invention relates to a forming method, an article manufacturing method, a program, a system, and a lithographic apparatus.

In recent years, the size of substrates has been increasing, especially in liquid crystal display devices, and there is a demand for efficient use of substrates. Therefore, a technique called MMG (Multi Model on Glass) has been proposed in which devices of different sizes are formed on one substrate using a plurality of devices (see Patent Document 1). In such MMG technology, the overall dimensions and positions of a plurality of patterns formed in one layer on a substrate by a plurality of devices can be used as an evaluation index of pattern formation accuracy.

Japanese Patent Application Publication No. 2005-092137

A plurality of devices used in MMG technology may have individual differences in pattern formation characteristics. In this case, the positional relationship of a plurality of patterns formed by a plurality of devices may deviate from a target value (design value), making it difficult to accurately form patterns on a substrate.

Therefore, an object of the present invention is to provide an advantageous technique for improving pattern formation accuracy.

In order to achieve the above object, a forming method according to one aspect of the present invention includes forming a latent image of a first pattern on a layer on a substrate with a first device, and forming a region where the latent image of the first pattern is formed. A forming method for forming a latent image of a second pattern using a second device in a region of the layer different from that of the layer, the first device measuring the position of a mark formed on the substrate; a first step of forming a latent image of a pattern on the substrate; and a second step of measuring the position of the mark in the second device and forming a latent image of the second pattern on the substrate. In the first step, a latent image of the first pattern is formed on the substrate without using the measurement result in the first step, and in the second step, a latent image of the mark is formed in the first step. forming a latent image of the second pattern at a position determined using information based on a first measurement result of measuring the position and information based on a second measurement result of measuring the position of the mark in the second step; It is characterized by

Further objects or other aspects of the invention will become apparent from the preferred embodiments described below with reference to the accompanying drawings.

According to the present invention, it is possible to provide an advantageous technique for improving pattern formation accuracy, for example.

FIG. 1 is a schematic diagram showing the overall configuration of a forming system. It is a figure showing an example of composition of a 1st exposure device. It is a figure which shows the 1st pattern P1, the 2nd pattern P2, and the mark AM formed on the board|substrate. FIG. 3 is a schematic diagram for explaining a decrease in pattern formation accuracy according to Conventional Example 1. FIG. 7 is a schematic diagram for explaining a decrease in pattern formation accuracy according to Conventional Example 2. FIG. 7 is a schematic diagram for explaining a decrease in pattern formation accuracy according to Conventional Example 3. 5 is a flowchart showing a process of forming a pattern on a substrate. FIG. 6 is a schematic diagram showing how a mark AM, a first pattern P1, and a second pattern P2 are formed on a substrate over time.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. In addition, in each figure, the same reference number is attached|subjected about the same member thru|or element, and the overlapping description is abbreviate|omitted.

<First embodiment>
A forming system 100 (forming apparatus) according to a first embodiment of the present invention will be described. The forming system 100 of the present embodiment executes a so-called MMG (Multi Model on Glass) technique in which patterns are formed at mutually different positions in one layer (same layer) on a substrate using a plurality of lithography apparatuses. It is a system. Examples of lithography equipment include exposure equipment that exposes a substrate to transfer a mask pattern onto the substrate, imprint equipment that uses a mold to form a pattern of imprint material on the substrate, and Examples include a drawing device that forms a pattern on the surface of the device.

Further, "one layer on a substrate" to which the MMG technology according to the present invention is applied may be, for example, a layer (so-called first layer) that is first formed on a bare substrate on which a pattern is not yet formed. However, it is not limited thereto, and may be the second layer or later. In this embodiment, an example will be described in which a pattern (latent pattern) is formed on one resist layer (photosensitive agent) on a substrate using a forming system 100 having a plurality of exposure apparatuses 10. Here, as the substrate W, for example, a glass plate or a semiconductor wafer can be applied, but in this embodiment, an example in which a glass plate is used as the substrate W will be described. Furthermore, hereinafter, "one layer on the substrate" may be simply referred to as "on the substrate."

FIG. 1 is a schematic diagram showing the overall configuration of a forming system 100 according to the first embodiment. The forming system 100 may include a first exposure device 10 (first device), a second exposure device 20 (second device), a transport section 30, and a main control section 40. The transport section 30 transports the substrate W to the first exposure apparatus 10 and the second exposure apparatus 20. The main control unit 40 is composed of, for example, a computer having a CPU and a memory, and controls the entire forming system 100 in an integrated manner, and also transfers data and information between the first exposure apparatus 10 and the second exposure apparatus 20. Transfer can be controlled.

The first exposure apparatus 10 may include, for example, a pattern forming section 11 (first forming section), a mark forming section 12, a mark measuring section 13 (first measuring section), and a control section 14. The pattern forming section 11 forms a first pattern P1 on the substrate by transferring the pattern of the mask M onto the substrate. For example, the pattern forming unit 11 forms the first pattern P1 in a first region on the substrate based on first information (for example, design data) indicating the target position coordinates where the first pattern P1 is to be formed. The mark forming unit 12 forms alignment marks on the substrate based on information (for example, design data) indicating target position coordinates where alignment marks are to be formed. The mark measuring section 13 measures the position of the alignment mark formed by the mark forming section 12. The control unit 14 is configured by a computer having, for example, a CPU and a memory, and controls the pattern forming unit 11, mark forming unit 12, and mark measuring unit 13 according to the apparatus coordinate system (that is, controls each process by the first exposure apparatus 10). Control). In this embodiment, the control unit 14 is provided separately from the main control unit 40, but may be provided as a component of the main control unit 40.

The second exposure apparatus 20 may include, for example, a pattern forming section 21 (second forming section), a mark measuring section 23 (second measuring section), and a control section 24. Although the second exposure apparatus 20 of this embodiment does not include a mark forming section, a mark forming section may be provided. The pattern forming unit 21 forms a second pattern P2 on the substrate by transferring the pattern of the mask M onto the substrate. For example, the pattern forming unit 21 determines, based on second information (for example, design data) indicating the target position coordinates where the second pattern P2 is to be formed, that the pattern forming unit 21 A second pattern P2 is formed in the second region. The mark measuring section 23 measures the position of the mark AM formed by the mark forming section 12 of the first exposure apparatus 10. The control section 24 is constituted by a computer having, for example, a CPU and a memory, and controls the pattern forming section 21 and the mark measuring section 23 according to the apparatus coordinate system (that is, controls each process performed by the second exposure apparatus 20). In this embodiment, the control unit 24 is provided separately from the main control unit 40, but may be provided as a component of the main control unit 40.

Next, a specific example of the configuration of the first exposure apparatus 10 will be described. FIG. 2 is a diagram showing an example of the configuration of the first exposure apparatus 10. Here, the second exposure apparatus 20 differs from the first exposure apparatus 10 in that the mark forming section 12 is not provided, but the other configurations may be the same. That is, the pattern forming section 21 and mark measuring section 13 of the second exposure apparatus 20 may be configured similarly to the pattern forming section 11 and mark forming section 23 of the first exposure apparatus 10, respectively.

The first exposure apparatus 10 may include, as the pattern forming section 11, an illumination optical system 11b, a mask stage 11c, a projection optical system 11d, and a substrate stage 11e. The illumination optical system 11b illuminates the mask M using light from the light source 11a. The mask stage 11c is configured to hold the mask M and to be movable. The projection optical system 11d projects the pattern formed on the mask M onto the substrate W. The substrate stage 11e is configured to hold the substrate W and be movable. In the first exposure apparatus 10 configured in this way, the mask M and the substrate W are respectively arranged at optically conjugate positions (object plane and image plane of the projection optical system 11d) via the projection optical system 11d, The pattern of the mask M is projected onto the substrate by the projection optical system 11d. Thereby, a latent pattern can be formed in the resist layer on the substrate.

Further, the first exposure apparatus 10 shown in FIG. 2 is provided with the above-described mark forming section 12 and mark measuring section 13. The mark forming unit 12, also called MF (Mark Former), forms alignment marks on the substrate by irradiating the substrate with energy such as a charged particle beam. Hereinafter, the alignment mark formed on the substrate by the mark forming section 12 may be referred to as "mark AM". The mark measuring section 13 measures the position of the mark AM by detecting the mark AM formed on the substrate by the mark forming section 12. For example, the mark measuring unit 13 includes a scope (off-axis scope) having an image sensor and an optical element, and based on the position of the substrate W (XY direction) and the position of the mark AM within the field of view of the scope, The position of mark AM can be measured.

[About pattern formation accuracy]
Next, the formation of the first pattern P1, the second pattern P2, and the mark AM on the substrate by the forming system 100 (first exposure device 10, second exposure device 20) will be described. FIG. 3 is a diagram showing a first pattern P1, a second pattern P2, and a mark AM formed on a substrate by the forming system 100.

The first pattern P1 may be formed in a first region on the substrate by the pattern forming unit 11 of the first exposure apparatus 10. The second pattern P2 may be formed by the pattern forming unit 21 of the second exposure apparatus 20 in a second region on the substrate that is different from the first region where the first pattern P1 is formed. In the example shown in FIG. 3, one first pattern P1 and one second pattern P2 are formed on the substrate with the same dimensions (size), but the pattern is not limited thereto, and they may have different dimensions and numbers.

Further, the marks AM are formed by the mark forming unit 12 of the first exposure device 10 at a plurality of locations in a region different from the region where the first pattern P1 and the second pattern P2 are formed (first region, second region). It can be done. In the example shown in FIG. 3, three marks AM1 to AM3 are formed near the corners of the substrate W so that they are not arranged on the same straight line. When the three marks AM1 to AM3 are formed on the substrate in this way, the X direction shift, Y direction shift, rotation, X direction magnification, and Y direction magnification are determined based on the measurement results of the positions of the three marks AM1 to AM3. can be found.

Here, the accuracy of pattern formation by the formation system 100 (MMG technology) can be evaluated based on the dimensions and position of the entire pattern formed on the substrate. The dimensions of the entire pattern formed on the substrate can be defined, for example, by a first index TP (Total Pitch) that represents the length of a diagonal line in the entire pattern formed on the substrate. In this embodiment, the lower right end point EP1 of the first pattern P1 formed on the substrate by the first exposure device 10 and the upper left end point EP2 of the second pattern P2 formed on the substrate by the second exposure device 20 are used. The length of the straight line connecting these can be determined as the first index TP. On the other hand, the position of the entire pattern formed on the substrate can be defined, for example, by a second index CS (Center Shift) that indicates the position of the center point of the entire pattern formed on the substrate. In this embodiment, the center point of the straight line connecting the end points EP1 and EP2 may be determined as the second index CS.

[Issues with conventional pattern formation]
In the forming system 100 having a plurality of devices (first exposure device 10, second exposure device 20), the substrate is It is required to form a pattern. In the conventional method, the position of the mark AM formed on the substrate is measured in each of the first exposure device 10 and the second exposure device 20, and patterns (first pattern P1, second pattern P2) was formed on the substrate. However, the accuracy in forming the mark AM by the mark forming section 12 is insufficient, and the mark AM may not be formed at the target position coordinates (designed position) on the substrate. Therefore, if a pattern is formed on the substrate based on the measurement result of the position of the mark AM, it is difficult to form the pattern on the substrate with high precision according to the formation accuracy of the mark AM, as shown in the conventional example below. It can become.

Conventional example 1
FIG. 4 is a schematic diagram for explaining the decrease in pattern formation accuracy according to Conventional Example 1. Conventional Example 1 shows an example in which three marks AM1 to AM3 are formed on the substrate shifted in one direction from the target position coordinate _TAM , as shown in FIG. 4(a). In this case, in the first exposure apparatus 10, the marks AM1 to AM3 and the first pattern P1 have a target positional relationship (for example, a positional relationship in the design data) based on the measurement results of the positions of the marks AM1 to AM3. The first pattern P1 is formed as shown in FIG. 4(b). In addition, the second exposure device 20 forms a second pattern P2 based on the measurement results of the positions of the marks AM1 to AM3 so that the marks AM1 to AM3 and the second pattern P2 have a target positional relationship (Fig. 4(c)). In this example, the first pattern P1 and the second pattern P2 are formed on the substrate shifted from the target position coordinates T P1 and T P2 depending on the shift of the marks _AM1 to _AM3 from the target position coordinate T _AM . It happens. That is, in this example, the first index TP as the dimension of the entire pattern can be kept within the allowable range, but the second index CS as the position of the entire pattern cannot be kept within the allowable range.

Conventional example 2
FIG. 5 is a schematic diagram for explaining the decrease in pattern formation accuracy according to Conventional Example 2. In conventional example 2, as shown in FIG. 5(a), marks AM1 to AM2 on the +Y direction side are formed on the substrate shifted from the target position coordinate _TAM in the +Y direction, and mark AM3 on the -Y direction side is formed on the substrate. is formed on the substrate shifted in the -Y direction from the target position coordinate _TAM . In this case, the first exposure apparatus 10 forms the first pattern P1 based on the measurement results of the positions of the marks AM1 to AM3 so that the marks AM1 to AM3 and the first pattern P1 have a target positional relationship ( Figure 5(b)). In addition, the second exposure device 20 forms a second pattern P2 based on the measurement results of the positions of the marks AM1 to AM3 so that the marks AM1 to AM3 and the second pattern P2 have a target positional relationship (Fig. 5(c)). In this example, depending on the shift of the marks AM1 to AM3 from the target position coordinate _TAM , the first pattern P1 and the second pattern P2 are formed on the substrate with their magnifications in the ±Y direction changed. becomes. That is, in this example, although the second index CS as the position of the entire pattern can be kept within the permissible range, it becomes impossible to keep the first index as the dimension of the entire pattern within the permissible range.

Conventional example 3
FIG. 6 is a schematic diagram for explaining the decrease in pattern formation accuracy according to Conventional Example 3. Conventional Example 3 shows an example in which three marks AM1 to AM3 are formed on the substrate shifted in one direction from the target position coordinate _TAM , as shown in FIG. 6(a). In this case, the first exposure apparatus 10 performs the first exposure based on information (design data) indicating the target position coordinates at which the first pattern P1 is to be formed, without using the measurement results of the positions of the marks AM1 to AM3. A first pattern P1 is formed under the coordinate system of the apparatus 10 (FIG. 6(b)). On the other hand, the second exposure device 20 forms a second pattern P2 based on the measurement results of the positions of the marks AM1 to AM3 so that the marks AM1 to AM3 and the second pattern P2 have a target positional relationship (Fig. 6(c)). In this example, the first pattern P1 is formed on the substrate without depending on the shifts of the marks AM1 to AM3, but the second pattern P2 depends on the shifts of the marks AM1 to AM3, and the target position coordinate T _P1 It will be formed on the substrate with a shift from . That is, in this example, the positional relationship between the first pattern P1 and the second pattern P2 deviates from the target positional relationship, and the first index TP as the dimension of the entire pattern and the second index CS as the position of the entire pattern cannot be kept within an acceptable range.

[Pattern formation process of this embodiment]
In this embodiment, in order to solve the above-mentioned problems in conventional pattern formation, both the first pattern P1 and the second pattern P2 are formed by each exposure device based on information (for example, design data) indicating the target position coordinates. is formed on the substrate under the coordinate system of Specifically, the first exposure apparatus 10 forms the first pattern P1 on the substrate at the target position coordinates in the coordinate system of the first exposure apparatus 10 based on information indicating the target position coordinates at which the first pattern P1 is to be formed. form. Similarly, the second exposure device 20 forms a second pattern P2 on the substrate at the target position coordinates in the coordinate system of the second exposure device 20 based on information indicating the target position coordinates at which the second pattern P2 is to be formed. do.

Incidentally, among the plurality of exposure apparatuses (first exposure apparatus 10, second exposure apparatus 20) used in the forming system 100, individual differences may occur in characteristics specific to each apparatus. The characteristic refers to an error unique to the apparatus, such as an error in the apparatus coordinate system or a placement error of a substrate transferred onto a substrate stage. As described above, if individual differences in characteristics occur between the first exposure device 10 and the second exposure device 20, the first pattern P1 formed by the first exposure device 10 and the second pattern P1 formed by the second exposure device 20 The positional relationship with the second pattern P2 deviates from the target positional relationship. As a result, the first indicator TP as the dimension of the entire pattern and the second indicator CS as the position of the entire pattern may become insufficient (in particular, the first indicator TP may become insufficient).

Therefore, in the forming system 100 of the present embodiment, the position of the mark AM measured by the mark measuring section 13 under the coordinate system of the first exposure apparatus 10 and the position of the mark AM measured under the coordinate system of the second exposure apparatus 20 are The difference between the position of the mark AM and the position of the mark AM measured by the measuring unit 23 is determined. Then, based on the difference, the position of the second pattern P2 formed on the substrate under the coordinate system of the second exposure apparatus 20 is determined (corrected). Specifically, the deviation in the positional relationship between the first pattern P1 and the second pattern P2 due to individual differences in pattern formation characteristics between the first exposure device 10 and the second exposure device 20 is corrected. , the position of the second pattern P2 formed on the substrate can be determined. Thereby, the first pattern and the second pattern can be formed on the substrate so that each of the first index TP and the second index CS falls within the permissible range.

The pattern forming process (MMG technology) on a substrate in the forming system 100 of this embodiment will be described below with reference to FIGS. 7 and 8. FIG. 7 is a flowchart showing the process of forming a pattern on a substrate according to this embodiment. Each step of the flowchart shown in FIG. 7 can be executed under the control of the main control unit 40. Moreover, FIG. 8 is a schematic diagram showing how the mark AM, the first pattern P1, and the second pattern P2 are formed on the substrate over time.

In S11, the substrate W is transported to the first exposure apparatus 10 by the transport section 30.
In S12, the mark forming unit 12 of the first exposure device 10 forms a pattern on the substrate under the coordinate system of the first exposure device 10 based on information (for example, design data) indicating the target position coordinates where the mark AM is to be formed. A mark AM is formed on (mark formation step). That is, the mark AM is formed at the target position coordinates in the coordinate system of the first exposure apparatus 10. Here, as described above, since the accuracy in forming the mark AM by the mark forming section 12 is insufficient, the mark AM may not be formed at the target position coordinates but may be formed at a position shifted from the target position coordinates. In this embodiment, three marks AM are formed on the substrate, and the three marks AM include a shift component in the X direction (an example of an arrangement misalignment component) and a magnification component in the Y direction (an example of a shape change component). ) is assumed to have occurred.

In S13, the position of the mark AM formed on the substrate in the step S12 is measured by the mark measurement unit 13 of the first exposure device 10 under the coordinate system of the first exposure device 10 (first measurement step ). Thereby, mark coordinate information C1 indicating the position coordinates of the mark AM in the coordinate system of the first exposure apparatus 10 can be obtained. Assuming that no measurement error occurs in the mark measuring section 13, this mark coordinate information C1 includes an error component CM1 uniquely occurring in the first exposure device 10 and a formation error component CMX of the mark AM by the mark forming section 12. have The error component CM1 includes, for example, an error in the apparatus coordinate system in the first exposure apparatus 10, an error in placing the substrate W on the substrate stage, and includes an X-direction shift, a Y-direction shift, rotation (θ direction), and an X-direction magnification. and Y-direction magnification. Further, the formation error component CMX of the mark AM can also be expressed by a plurality of elements like the error component CM1, but in this embodiment, it consists of an X direction shift and a Y direction magnification.

In S14, the pattern forming section of the first exposure apparatus 10 is moved under the coordinate system of the first exposure apparatus 10 based on first information (for example, design data) indicating the target position coordinates at which the first pattern P1 is to be formed. 11, a first pattern P1 is formed on the substrate (first formation step). That is, the first pattern P1 is formed at the target position coordinates in the coordinate system of the first exposure apparatus 10 without using the mark coordinate information C1 (measurement result by the mark measuring section 13) obtained in the step S13. According to this step, as shown in FIG. 8(a), although an error component CM1 inherent in the first exposure device 10 occurs with respect to the target position coordinates of the first information, the mark AM is formed by the mark forming section 12. The first pattern P1 can be formed on the substrate without depending on the error component CMX.

In S15, the substrate W is transported from the first exposure device 10 to the second exposure device 20 by the transport unit 30, and the mark coordinate information C1 obtained by the first exposure device 10 in the step S13 is transferred to the second exposure device 20. Transfer (notify). In this embodiment, the mark coordinate information C1 is transferred when the substrate W is transported to the second exposure apparatus 20, but the transfer is not limited thereto, and may be performed between S13 and S17.

In S16, under the coordinate system of the second exposure device 20, the mark measurement unit 23 of the second exposure device 20 measures the marks formed on the substrate by the mark forming unit 12 of the first exposure device 10 in the step S12. The position of AM is measured (second measurement step). Thereby, mark coordinate information C2 indicating the positional coordinates of the mark AM in the coordinate system of the second exposure device 20 can be obtained. Assuming that no measurement error occurs in the mark measuring section 23, this mark coordinate information C2 includes an error component CM2 uniquely occurring in the second exposure device 20 and a formation error component CMX of the mark AM by the mark forming section 12. have The error component CM2 includes, for example, an error in the apparatus coordinate system in the second exposure apparatus 20, an error in placing the substrate W on the substrate stage, and includes an X-direction shift, a Y-direction shift, rotation (θ direction), and an X-direction magnification. and Y-direction magnification.

In S17, a correction value CV to be used when forming the second pattern P2 on the substrate under the coordinate system of the second exposure device 20 is determined. The correction value CV calculates the individual difference in characteristics between the first exposure device 10 and the second exposure device 20, that is, the difference between the error uniquely occurring in the first exposure device 10 and the error uniquely occurring in the second exposure device 20. This is for correction (reduction) and can be obtained by the following equation (1). In equation (1), the difference between the mark coordinate information C1 obtained by the first exposure device 10 in the step S13 and the mark coordinate information C2 obtained by the second exposure device 20 in the step S16 is the correction value CV. can be obtained as Mark coordinate information C1 and mark coordinate information C2 commonly include a formation error component CMX of mark AM. Therefore, as a result, the correction value CV becomes the difference between the error component CM1 uniquely generated in the first exposure device 10 and the error component CM2 uniquely generated in the second exposure device 20.
CV=C2-C1
=(CM2+CMX)-(CM1+CMX)
=CM2-CM1...(1)

In S18, the pattern forming section of the second exposure apparatus 20 is moved under the coordinate system of the second exposure apparatus 20 based on second information (for example, design data) indicating the target position coordinates at which the second pattern P2 is to be formed. 21, a second pattern P2 is formed on the substrate (second formation step). At this time, the position of the second pattern P2 to be formed on the substrate based on the coordinate system of the second exposure device 20 is determined based on the correction value CV obtained in the step S17. Specifically, the target position coordinates of the second information are corrected using the correction value CV, and the second pattern P2 is formed on the substrate based on the obtained position coordinates. As shown in FIG. 8(b), the error in the second pattern P2 formed on the substrate in this way is only the error component CM1 obtained by subtracting the correction value CV from the error component CM2 inherent in the second exposure device 20. Become. That is, the first pattern P1 and the second pattern P2 have the same error component CM1, and the individual differences in characteristics between the first exposure apparatus 10 and the second exposure apparatus 20 can be corrected (reduced). As a result, the first index TP, which is the dimension of the entire pattern, and the second index CS, which is the position of the entire pattern, can be kept within allowable ranges. Further, in S19, the substrate W is transported out of the second exposure apparatus 20 by the transport section 30.

As described above, the forming system 100 of the present embodiment uses the second The position of the second pattern P2 formed on the substrate by the exposure device 20 is determined. Thereby, it is possible to correct (reduce) individual differences in characteristics between the first exposure apparatus 10 and the second exposure apparatus 20, and improve pattern formation accuracy using the MMG technique.

<Embodiment of article manufacturing method>
The article manufacturing method according to the embodiment of the present invention is suitable for manufacturing articles such as micro devices such as semiconductor devices and elements having fine structures. The method for manufacturing an article of the present embodiment includes a step of forming a latent image pattern on a photosensitive agent applied to a substrate using the above-mentioned exposure device (a step of exposing the substrate), and a step of forming a latent image pattern in this step. The method includes a step of developing (processing) the substrate. Additionally, such manufacturing methods include other well-known steps (oxidation, deposition, deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The method for manufacturing an article according to the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article compared to conventional methods.

<Other Examples>
The present invention provides a system or device with a program that implements one or more of the functions of the embodiments described above via a network or a storage medium, and one or more processors in the computer of the system or device reads and executes the program. This can also be achieved by processing. It can also be realized by a circuit (for example, ASIC) that realizes one or more functions.

Although preferred embodiments of the present invention have been described above, it goes without saying that the present invention is not limited to these embodiments, and various modifications and changes can be made within the scope of the gist thereof.

10: First exposure device, 11: Pattern forming section, 12: Mark forming section, 13: Mark measuring section, 20: Second exposure device, 21: Pattern forming section, 23: Mark measuring section, 30: Conveying section, 40 : Main control unit, 100: Forming system

Claims (9)

A first device forms a latent image of a first pattern on a layer on a substrate, and a second device forms a latent image of a second pattern in a region of the layer different from the region where the latent image of the first pattern is formed. A forming method for forming a
In the first device, a first step of measuring the position of a mark formed on the substrate and forming a latent image of the first pattern on the substrate;
a second step of measuring the position of the mark and forming a latent image of the second pattern on the substrate in the second device;
including;
In the first step, a latent image of the first pattern is formed on the substrate without using the measurement results in the first step,
In the second step, the position of the mark is determined using information based on a first measurement result obtained by measuring the position of the mark in the first step and information based on a second measurement result obtained by measuring the position of the mark in the second step. A forming method characterized in that a latent image of the second pattern is formed at a position where the second pattern is formed. In the second step, a shift in the positional relationship between the latent image of the first pattern and the latent image of the second pattern due to a difference in characteristics between the first device and the second device is corrected. , correcting the position of the latent image of the second pattern formed on the substrate in the second device using information based on the first measurement result and information based on the second measurement result. The forming method according to claim 1. In the second step, the mark is formed on the substrate in the second device based on the difference between the position of the mark measured in the first step and the position of the mark measured in the second step. 3. The forming method according to claim 1, further comprising determining a position of a latent image of the second pattern. In the second step, the second device forms the latent image of the second pattern on the substrate based on the position obtained by correcting the target position where the latent image of the second pattern is to be formed using the difference. 4. The forming method according to claim 3, wherein the forming method is formed as follows. The forming method according to any one of claims 1 to 4, further comprising the step of transferring the measurement results in the first step from the first device to the second device. A first device forms a latent image of a first pattern on a layer on a substrate, and a second device forms a latent image of a second pattern in a region of the layer different from the region where the latent image of the first pattern is formed. a first step of forming a latent image of the first pattern on the substrate by measuring the position of a mark formed on the substrate in the first device; and a first step of forming a latent image of the first pattern on the substrate; a second step of measuring the position of the mark and forming a latent image of the second pattern on the substrate, the first step not using the measurement results in the first step; , a latent image of the first pattern is formed on the substrate, and in the second step, information based on the first measurement result obtained by measuring the position of the mark in the first step and the position of the mark in the second step. a forming step of forming a latent image of the second pattern at a position determined using information based on a second measurement result of position measurement;
a developing step of developing the substrate on which the latent image of the pattern is formed;
A method for manufacturing an article, comprising manufacturing an article from the substrate developed in the developing step. A program for causing a computer to execute each step of the forming method according to any one of claims 1 to 5. A system for forming a latent image of a first pattern on a layer on a substrate, and forming a latent image of a second pattern in an area of the layer different from an area in which the latent image of the first pattern is formed, the system comprising:
a first device having a first measurement unit that measures the position of a mark formed on the substrate; and a first formation unit that forms a latent image of the first pattern on the substrate;
a second device having a second measurement unit that measures the position of the mark; and a second formation unit that forms a latent image of a second pattern on the substrate;
including;
The first forming unit forms a latent image of the first pattern on the substrate without using the measurement result at the first measuring unit,
The second forming part is determined based on information obtained by measuring the position of the mark with the first measuring part and information obtained by measuring the position of the mark with the second measuring part. forming a latent image of the second pattern at the position where the latent image is formed. A lithography apparatus for forming a latent image of a first pattern on a layer on a substrate, the lithography apparatus forming a latent image of a first pattern in a region of the layer different from the region in which the latent image of the first pattern is formed, by a lithography apparatus different from the lithography apparatus. A lithographic apparatus that forms a latent image of the first pattern before forming a latent image of the second pattern,
a measurement unit that measures the position of the mark formed on the substrate;
a forming section that forms a latent image of the first pattern;
a control unit that outputs information indicating the position of the mark obtained by the measurement unit to the another lithography apparatus;
including;
The lithography apparatus is characterized in that the forming section forms a latent image of the first pattern on the substrate without using the measurement result from the measuring section.

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