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JP7440715B2 - Charge measuring method, charging method, charge measuring device and charging device - Google Patents
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JP7440715B2 - Charge measuring method, charging method, charge measuring device and charging device - Google Patents

Charge measuring method, charging method, charge measuring device and charging device Download PDF

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JP7440715B2
JP7440715B2 JP2020049591A JP2020049591A JP7440715B2 JP 7440715 B2 JP7440715 B2 JP 7440715B2 JP 2020049591 A JP2020049591 A JP 2020049591A JP 2020049591 A JP2020049591 A JP 2020049591A JP 7440715 B2 JP7440715 B2 JP 7440715B2
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charge
scanning
raw material
charging
material surface
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JP2021147674A (en
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芙美子 田中
健大 山本
伸平 末松
利也 北川
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Nippon Steel Corp
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Priority to PCT/JP2021/009103 priority patent/WO2021187209A1/en
Priority to KR1020227031753A priority patent/KR20220140817A/en
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    • CCHEMISTRY; METALLURGY
    • C21METALLURGY OF IRON
    • C21BMANUFACTURE OF IRON OR STEEL
    • C21B7/00Blast furnaces
    • C21B7/24Test rods or other checking devices
    • CCHEMISTRY; METALLURGY
    • C21METALLURGY OF IRON
    • C21BMANUFACTURE OF IRON OR STEEL
    • C21B5/00Making pig-iron in the blast furnace
    • CCHEMISTRY; METALLURGY
    • C21METALLURGY OF IRON
    • C21BMANUFACTURE OF IRON OR STEEL
    • C21B5/00Making pig-iron in the blast furnace
    • C21B5/001Injecting additional fuel or reducing agents
    • CCHEMISTRY; METALLURGY
    • C21METALLURGY OF IRON
    • C21BMANUFACTURE OF IRON OR STEEL
    • C21B5/00Making pig-iron in the blast furnace
    • C21B5/008Composition or distribution of the charge
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D21/00Arrangement of monitoring devices; Arrangement of safety devices
    • F27D21/0028Devices for monitoring the level of the melt

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  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacture Of Iron (AREA)
  • Blast Furnaces (AREA)
  • Waste-Gas Treatment And Other Accessory Devices For Furnaces (AREA)

Description

本発明は、装入物測定方法、装入方法、装入物測定装置および装入装置に関する。 The present invention relates to a charge measuring method, a charging method, a charge measuring device, and a charging device.

高炉においては、炉頂から原料となる鉄鉱石や還元材などの装入物を散布し、炉内に充填している。装入には、炉頂に設けた旋回式のシュートが用いられている。
旋回式のシュートは、炉頂中心から外周側へ下向きに傾斜して配置され、傾斜角度は調整機構により調整可能である。シュートは、旋回機構により炉頂中心を通る垂直な軸廻りに旋回駆動される。シュートから散布される装入物は、シュートの傾斜および旋回速度に応じた軌跡を描いて落下し、原料面(炉内に充填された装入物の表面)に所定半径の円環状の領域に堆積する。従って、シュートの傾斜角度および旋回速度を適切に制御することで、原料面における装入物の落下位置つまり到達半径を調整することができ、原料面の高さを調整し、凹凸を均す等により、原料面を所望の形状とすることができる。通常、原料面は外周側が高く、中心部が低い円錐形状とされる。
In a blast furnace, charges such as raw material iron ore and reducing agent are spread from the top of the furnace and filled into the furnace. For charging, a rotating chute installed at the top of the furnace is used.
The rotating chute is arranged to be inclined downward from the center of the furnace top to the outer circumferential side, and the angle of inclination can be adjusted by an adjustment mechanism. The chute is driven to rotate around a vertical axis passing through the center of the furnace top by a rotating mechanism. The charge scattered from the chute falls in a trajectory according to the inclination and rotation speed of the chute, and is spread over a circular area of a predetermined radius on the raw material surface (the surface of the charge filled in the furnace). accumulate. Therefore, by appropriately controlling the tilt angle and rotation speed of the chute, it is possible to adjust the falling position of the charge on the raw material surface, that is, the radius of arrival, and adjust the height of the raw material surface, smoothing out unevenness, etc. This allows the raw material surface to have a desired shape. Usually, the raw material surface has a conical shape, with the outer circumference being higher and the center being lower.

従来、シュート式の装入装置で装入物を散布する際には、装入物の落下位置が適切な位置となるように、装入物の落下状態を測定し、シュートの制御に反映させている。
例えば、炉内にマイクロ波ないしミリ波のビームを形成し、ビームを通過する装入物を検出して落下軌跡を検出し、落下位置を推定することが行われている(特許文献1,2参照)。
さらに、炉内に三次元スキャナを導入し、原料面をスキャンすることで、原料面に落下した装入物の分布や堆積状態を測定することも行われている(特許文献3参照)。
Conventionally, when dispersing the charge with a chute-type charging device, the falling state of the charge is measured and reflected in chute control so that the charge falls at an appropriate position. ing.
For example, a microwave or millimeter wave beam is formed in a furnace, the charge passing through the beam is detected, the falling trajectory is detected, and the falling position is estimated (Patent Documents 1 and 2). reference).
Furthermore, a three-dimensional scanner is introduced into the furnace and the raw material surface is scanned to measure the distribution and accumulation state of the charges falling on the raw material surface (see Patent Document 3).

特開平3-111504公報Japanese Patent Application Publication No. 3-111504 特開2015-120964号公報Japanese Patent Application Publication No. 2015-120964 特開2019-151886号公報Japanese Patent Application Publication No. 2019-151886

前述した特許文献1,2の測定方法では、原料面における装入物の落下位置が推定できるものの、原料面に落下したのちの装入物の挙動までは検出できない。また、落下する装入物の流れの厚み(シュートの旋回軸に対して径方向の流れ寸法)は、ビームとの交差の検出では測定することができない。
一方、前述した特許文献3の測定方法によれば、原料を撒き終わった後の原料面を測定することで、装入物の落下位置や原料面の状態に関する多様な情報を得ることができる。しかし、特許文献3の方法では、落下前の装入物の落下挙動を測定することができない。
また、特許文献3の方法では、原料面形成に影響が大きな落下後の堆積挙動も測定できない。すなわち、原料面に落下した装入物は、堆積した状態から傾斜方向下向きに崩れることがある。しかし、特許文献3の方法では、結果としての原料面が測定されるだけであり、動的な堆積挙動は把握することができない。そして、上記のような理由によって、当初計画した装入物分布と異なる分布が形成された場合に、原因が明確にならないため、計画通りの装入物分布に戻すための修正方法が明確でなく、トライ&エラーの繰り返しが避けられなかった。
In the measurement methods of Patent Documents 1 and 2 mentioned above, although the falling position of the charge on the raw material surface can be estimated, the behavior of the charge after falling on the raw material surface cannot be detected. Furthermore, the thickness of the falling charge flow (the flow dimension in the radial direction with respect to the pivot axis of the chute) cannot be measured by detecting the intersection with the beam.
On the other hand, according to the measurement method of Patent Document 3 mentioned above, by measuring the raw material surface after the raw material has been spread, various information regarding the falling position of the charge and the state of the raw material surface can be obtained. However, with the method of Patent Document 3, it is not possible to measure the falling behavior of the charge before it falls.
Further, the method of Patent Document 3 cannot measure the deposition behavior after falling, which has a large effect on the formation of the raw material surface. That is, the charges that have fallen onto the raw material surface may collapse downward in the direction of inclination from the piled up state. However, in the method of Patent Document 3, only the resulting raw material surface is measured, and the dynamic deposition behavior cannot be grasped. For the reasons mentioned above, when a distribution of burden material differs from the originally planned one, the cause is not clear and it is not clear how to correct it to return to the distribution of charge as planned. , repeated trial and error was inevitable.

本発明の目的は、装入物の落下挙動および原料面での堆積挙動をともに測定できる装入物測定方法、装入方法、装入物測定装置および装入装置を提供することにある。 An object of the present invention is to provide a charge measuring method, a charging method, a charge measuring device, and a charging device that can measure both the falling behavior of the charge and the deposition behavior on the raw material surface.

本発明の装入物測定方法は、高炉内に充填された装入物の原料面に、マイクロ波ないしミリ波の走査ビームを照射し、前記走査ビームが照射された前記装入物の位置を検出することで、落下中の前記装入物の落下挙動、前記原料面の形状、および前記原料面での前記装入物の堆積挙動の少なくともいずれかを測定することを特徴とする。 The charge measuring method of the present invention irradiates a microwave or millimeter wave scanning beam onto the raw material surface of the charge filled in a blast furnace, and determines the position of the charge irradiated with the scanning beam. By detecting, at least one of the falling behavior of the charging material during falling, the shape of the raw material surface, and the accumulation behavior of the charging material on the raw material surface is measured.

このような本発明では、装入物の装入動作中に並行して測定動作を行う。走査ビームは二次元平面状に拡がりをもつため、原料面には線状の照射領域が形成される。照射領域では原料面の表面に堆積している装入物の位置が検出され、これにより照射領域に沿った原料面の表面プロフィールが測定できる。原料面の表面プロフィールは、原料面の形状を示すとともに、連続して測定することで、その経時的な変化、つまり原料面に装入物が堆積してゆく状況や、堆積した装入物が崩落する状況など、原料面での装入物の堆積挙動を測定することができる。さらに、装入物の装入動作と並行して測定するため、走査ビームにより原料面に向けて落下中の装入物を検出し、これにより装入物の落下挙動を測定することができる。とくに、走査ビームが二次元平面状に拡がりをもつことで、同平面において装入物の落下軌跡として検出することができる。
このように、本発明により、装入物の落下挙動および原料面での堆積挙動をともに測定することができる。
なお、本発明の走査ビームは、1本の光ビームを振って線状の照射領域を形成するもののほか、線状の照射領域を形成可能な所定幅の光束であってもよい。ビームを振る場合、装入物からの反射光の検出タイミングにより装入物の位置を検出できる。幅のある光束の場合、受光部にラインセンサを用いて装入物による影を検出することで、装入物の位置を検出できる。
In the present invention, the measuring operation is performed in parallel during the charging operation of the charge. Since the scanning beam spreads in a two-dimensional plane, a linear irradiation area is formed on the raw material surface. In the irradiation region, the position of the charge deposited on the surface of the material surface is detected, which allows the surface profile of the material surface along the irradiation region to be measured. The surface profile of the raw material surface indicates the shape of the raw material surface, and by continuously measuring it, it can be used to determine changes over time, that is, how the charge is deposited on the raw material surface, and how the accumulated charge is It is possible to measure the deposition behavior of the charge on the raw material surface, such as the situation of collapse. Furthermore, since the measurement is performed in parallel with the charging operation of the charge, the charge falling toward the raw material surface is detected by the scanning beam, thereby making it possible to measure the falling behavior of the charge. In particular, since the scanning beam spreads in a two-dimensional plane, it is possible to detect the trajectory of the charge falling on the same plane.
Thus, according to the present invention, both the falling behavior of the charge and the deposition behavior on the raw material surface can be measured.
Note that the scanning beam of the present invention may be a beam of light having a predetermined width that can form a linear irradiation area, instead of one in which a linear irradiation area is formed by swinging a single light beam. When the beam is swung, the position of the charge can be detected by the detection timing of the reflected light from the charge. In the case of a wide beam of light, the position of the charge can be detected by using a line sensor in the light receiving section to detect the shadow caused by the charge.

本発明の装入物測定方法において、前記走査ビームで前記原料面を半径方向に走査する径方向走査を連続的に行うことが好ましい。
このような本発明では、原料面の中心部から外周縁に至る半径方向の照射領域で原料面の表面プロフィールを測定することができる。原料面に散布される装入物は、一般に点対称つまり周方向に一様であるため、任意の方向の表面プロフィールから原料面の形状が測定でき、装入物の落下軌跡についても測定できる。また、原料面における装入物の崩落も一般に径方向に生じるため、半径方向の表面プロフィールを連続測定することで、原料面での堆積挙動を測定できる。
このように、本発明では、限定的な範囲の走査ビームにより、装入物の落下挙動および原料面での堆積挙動を、全面の走査に比べて効率的に測定することができる。
なお、本発明の走査ビームは、崩落の検出に好適な半径方向だけでなく、直径方向およびこれに平行な線に沿って走査するとしてもよい。
In the method for measuring a charge according to the present invention, it is preferable that radial scanning in which the scanning beam scans the raw material surface in a radial direction is performed continuously.
According to the present invention, the surface profile of the raw material surface can be measured in the radial irradiation region from the center of the raw material surface to the outer periphery. Since the charge sprinkled on the raw material surface is generally point-symmetric, that is, uniform in the circumferential direction, the shape of the raw material surface can be measured from the surface profile in any direction, and the falling trajectory of the charge can also be measured. Furthermore, since the collapse of the charge on the raw material surface generally occurs in the radial direction, the deposition behavior on the raw material surface can be measured by continuously measuring the surface profile in the radial direction.
Thus, in the present invention, the limited area of the scanning beam allows the falling behavior of the charge and the deposition behavior on the raw material surface to be measured more efficiently than scanning the entire surface.
Note that the scanning beam of the present invention may scan not only in the radial direction, which is suitable for detecting a collapse, but also in the diametrical direction and along a line parallel thereto.

本発明の装入物測定方法において、前記走査ビームを走査方向と交差方向へ変位させつつ前記原料面を走査する全面走査を間欠的に行うことが好ましい。
このような本発明では、前述した半径方向の照射領域への限定的な走査ビームに対し、これを交差方向へ変位させることで、原料面のより広い範囲に走査ビームを照射することができ、原料面の略全面をカバーすることもできる。従って、通常は半径方向の照射領域に対する連続的な径方向走査により効率よく測定を行うとともに、所定間隔あるいは任意時点で全面走査を行って径方向走査の範囲外についても測定を行うことで、確実な測定結果を得ることができる。
In the charge measurement method of the present invention, it is preferable to intermittently perform full-surface scanning in which the raw material surface is scanned while the scanning beam is displaced in a direction intersecting the scanning direction.
In the present invention, by displacing the scanning beam in the cross direction, which is limited to the radial irradiation area described above, it is possible to irradiate a wider range of the raw material surface with the scanning beam, It is also possible to cover almost the entire surface of the raw material. Therefore, measurements are usually carried out efficiently by continuous radial scanning of the irradiated area in the radial direction, and also by performing full-scale scanning at predetermined intervals or at arbitrary times to measure areas outside the radial scanning range. It is possible to obtain accurate measurement results.

本発明の装入方法は、前述した本発明の装入物測定方法による測定結果に基づいて、前記装入物を装入する装入装置を制御することを特徴とする。
このような本発明の装入方法では、前述した本発明の装入物測定方法で説明した測定結果が装入動作中に得られるため、その測定結果に基づいて装入動作中に調整を行うことができ、常に適切な装入動作を行うことができる。
The charging method of the present invention is characterized in that a charging device for charging the charge is controlled based on the measurement result by the charge measuring method of the present invention described above.
In such a charging method of the present invention, the measurement results described in the above-mentioned charge measurement method of the present invention are obtained during the charging operation, and therefore adjustments are made during the charging operation based on the measurement results. Therefore, proper charging operation can be performed at all times.

本発明の装入方法において、前記装入装置は旋回式のシュートを有し、前記測定結果に基づいて前記シュートの傾斜角度および前記シュートの旋回状態の少なくともいずれかを制御することが好ましい。
このような本発明では、前述した本発明の装入物測定方法による測定結果に基づいて、装入動作中のシュートを制御することができ、常に適切な装入動作を行うことができる。
In the charging method of the present invention, it is preferable that the charging device has a rotating chute, and at least one of the inclination angle of the chute and the rotating state of the chute is controlled based on the measurement results.
According to the present invention, it is possible to control the chute during the charging operation based on the measurement results obtained by the above-described charge measurement method of the present invention, and it is possible to always perform the appropriate charging operation.

本発明の装入物測定装置は、高炉内に充填された装入物の原料面に、マイクロ波ないしミリ波の走査ビームを照射するビーム照射部と、前記走査ビームが照射された前記装入物の位置を検出する装入物検出部と、落下中の前記装入物の落下挙動、前記原料面の形状、および前記原料面での前記装入物の堆積挙動の少なくともいずれかを測定する挙動測定部と、を有することを特徴とする。
このような本発明の装入物測定装置では、前述した本発明の装入物測定方法で説明した通りの効果を得ることができる。
The charge measuring device of the present invention includes a beam irradiation unit that irradiates a scanning beam of microwave or millimeter waves onto the raw material surface of the charge filled in a blast furnace, and a beam irradiation unit that irradiates a scanning beam of microwave or millimeter waves to the raw material surface of the charge filled in a blast furnace; A charge detection unit that detects the position of an object, and measures at least one of the falling behavior of the charge during falling, the shape of the raw material surface, and the accumulation behavior of the charge on the raw material surface. A behavior measuring section.
With such a charge measuring device of the present invention, it is possible to obtain the effects as explained in the charge measuring method of the present invention described above.

本発明の装入装置は、前述した本発明の装入物測定装置と、前記装入物測定装置で測定された落下中の前記装入物の落下挙動前記原料面の形状、および前記原料面での前記装入物の堆積挙動の少なくともいずれかに基づいて前記装入物の装入状態を制御する装入制御装置と、を有することを特徴とする。
このような本発明の装入装置では、前述した本発明の装入方法で説明した通りの効果を得ることができる。
The charging device of the present invention includes the above-described charge measuring device of the present invention, the falling behavior of the charge during falling measured by the charge measuring device , the shape of the raw material surface, and the raw material. The present invention is characterized by comprising a charging control device that controls the charging state of the charge based on at least one of the deposition behavior of the charge on the surface.
With such a charging device of the present invention, the same effects as described in the charging method of the present invention described above can be obtained.

本発明によれば、装入物の落下挙動および原料面での堆積挙動をともに測定できる装入物測定方法、装入方法、装入物測定装置および装入装置を提供できる。 According to the present invention, it is possible to provide a charge measurement method, a charging method, a charge measurement device, and a charging device that can measure both the falling behavior of the charge and the deposition behavior on the raw material surface.

本発明の一実施形態の装入装置を示すブロック図。FIG. 1 is a block diagram showing a charging device according to an embodiment of the present invention. 前記実施形態における径方向走査を示す平面図。FIG. 3 is a plan view showing radial scanning in the embodiment. 前記実施形態における原料面での装入物の崩落を示す模式図。FIG. 3 is a schematic diagram showing the collapse of the charge on the raw material surface in the embodiment. 前記実施形態における原料面の堆積挙動の測定を示す模式図。FIG. 3 is a schematic diagram showing measurement of deposition behavior on a raw material surface in the embodiment. 前記実施形態における装入物の落下挙動の測定を示す模式図。FIG. 3 is a schematic diagram showing measurement of the falling behavior of the charge in the embodiment. 前記実施形態における全面走査を示す平面図。FIG. 3 is a plan view showing full-plane scanning in the embodiment. 前記実施形態における測定動作を示すタイムチャート。5 is a time chart showing measurement operations in the embodiment.

以下に本発明の一実施形態を図面に基づいて説明する。
図1において、高炉10には装入装置20が設置されている。
装入装置20は、炉頂11に設置された旋回式のシュート21を有するとともに、シュート21を旋回させる旋回駆動機構22、シュート21の傾きを調整する傾斜調整機構23、およびシュート21に装入物31を供給する装入物供給装置24を備えている。
An embodiment of the present invention will be described below based on the drawings.
In FIG. 1, a charging device 20 is installed in a blast furnace 10.
The charging device 20 includes a rotating chute 21 installed on the furnace top 11, a rotating drive mechanism 22 for rotating the chute 21, an inclination adjustment mechanism 23 for adjusting the inclination of the chute 21, and a rotating chute 21 for charging the chute 21. A charge supply device 24 for supplying material 31 is provided.

装入装置20において、装入物供給装置24から供給された装入物31は、旋回するシュート21から円形に散布され、高炉10の内部には装入物33が充填される。この際、旋回するシュート21の傾きを小さくすると装入物32は原料面34の中心部に落下し、シュート21の傾きを大きくすると装入物32は原料面34の外周部に落下する。すなわち、装入物32が着地する原料面34の半径領域は、傾斜調整機構23でシュート21の傾きを制御することで調整可能である。 In the charging device 20, the charge 31 supplied from the charge supply device 24 is spread in a circular manner from the rotating chute 21, and the inside of the blast furnace 10 is filled with the charge 33. At this time, when the tilt of the rotating chute 21 is decreased, the charge 32 falls to the center of the raw material surface 34, and when the tilt of the chute 21 is increased, the charge 32 falls to the outer periphery of the raw material surface 34. That is, the radial area of the raw material surface 34 on which the charge 32 lands can be adjusted by controlling the inclination of the chute 21 with the inclination adjustment mechanism 23.

装入装置20は、前述したシュート21による装入物32の装入動作を制御するために、装入制御装置40を備えている。
装入制御装置40は、旋回駆動機構22によるシュート21の旋回速度および装入物供給装置24からの装入物31の供給量を制御する装入制御部41と、傾斜調整機構23によるシュート21の傾き角度を制御する傾斜制御部42と、を備えている。
The charging device 20 includes a charging control device 40 in order to control the charging operation of the charge 32 by the chute 21 described above.
The charging control device 40 includes a charging control section 41 that controls the rotation speed of the chute 21 by the rotation drive mechanism 22 and the amount of charge 31 supplied from the charge supply device 24, and a charge control section 41 that controls the rotation speed of the chute 21 by the rotation drive mechanism 22 and the amount of charge 31 supplied from the charge supply device 24, and and an inclination control section 42 that controls the inclination angle of.

装入制御装置40は、高炉10を制御するネットワークおよびコンピュータシステムからなる制御システム12の一部として構成されている。
さらに、装入制御装置40には、シュート21の傾き制御にあたって、炉内の装入物32の落下挙動および原料面34での堆積挙動を測定するための装入物測定装置50が接続されている。
The charging control device 40 is configured as part of a control system 12 consisting of a network and a computer system that controls the blast furnace 10.
Furthermore, a charge measuring device 50 is connected to the charging control device 40 for measuring the falling behavior of the charge 32 in the furnace and the deposition behavior on the raw material surface 34 in controlling the inclination of the chute 21. There is.

装入物測定装置50は、高炉10に設置されたビーム照射部51を有するとともに、制御システム12に構成された走査制御部52、装入物検出部53、および挙動測定部54を有する。 The charge measurement device 50 has a beam irradiation unit 51 installed in the blast furnace 10, and also includes a scan control unit 52, a charge detection unit 53, and a behavior measurement unit 54 configured in the control system 12.

ビーム照射部51は、高炉10の鉄皮を貫通するように設置された円筒状のケース511を有し、その炉内側の先端にはミラー512が設置されている。
ミラー512は、ケース511に形成された下向きの開口から炉内に向けて露出されている。ケース511の下方には、マイクロ波ないしミリ波のビームを射出および検出可能なプローブ513が設置されている。プローブ513からのビームは、ミラー512で反射されて原料面34に対して照射可能である。
ビーム照射部51は、照射したマイクロ波ないしミリ波のビームが原料面34で反射されて戻ってきた際に、これを検出する受光部の機能を兼ねている。
The beam irradiation unit 51 has a cylindrical case 511 installed so as to penetrate the steel shell of the blast furnace 10, and a mirror 512 is installed at the tip inside the furnace.
The mirror 512 is exposed into the furnace through a downward opening formed in the case 511. A probe 513 capable of emitting and detecting a microwave or millimeter wave beam is installed below the case 511. The beam from the probe 513 is reflected by the mirror 512 and can be irradiated onto the raw material surface 34 .
The beam irradiation unit 51 also has the function of a light receiving unit that detects when the irradiated microwave or millimeter wave beam is reflected by the raw material surface 34 and returns.

ミラー512は、ケース511の内部を通るロッド514の先端に回動自在に支持されている。ケース511の炉外側端には走査機構515が設置されている。ミラー512は、ロッド514を介して走査機構515に接続され、走査機構515により回動図面交差方向の回動軸まわりに所定の走査角度範囲R1にわたって回動可能である。
ミラー512の回動により、ミラー512で反射されたマイクロ波ないしミリ波のビームが放射状に拡げられ、走査ビーム60が形成される。走査ビーム60が原料面34に照射されることで、原料面34には半径方向を走査方向Dsとする所定長さの線状の照射領域61(図2参照)が形成される。
The mirror 512 is rotatably supported at the tip of a rod 514 passing through the inside of the case 511. A scanning mechanism 515 is installed at the outer end of the case 511. The mirror 512 is connected to a scanning mechanism 515 via a rod 514, and is rotatable by the scanning mechanism 515 over a predetermined scanning angle range R1 around a rotation axis in a direction crossing the rotation plane.
As the mirror 512 rotates, the microwave or millimeter wave beam reflected by the mirror 512 is spread radially to form a scanning beam 60. By irradiating the raw material surface 34 with the scanning beam 60, a linear irradiation area 61 (see FIG. 2) of a predetermined length is formed on the raw material surface 34, with the radial direction being the scanning direction Ds.

ロッド514には、ケース511に対してロッド514を回転させる走査方向調整機構516が接続され、走査方向調整機構516によりロッド514を回動させることでミラー512もロッド514の軸線廻りに所定のトラバース角度範囲R2にわたって回動可能である。
ミラー512のロッド514の軸線廻りの回動により、原料面34に形成される走査ビーム60の照射領域61(図2参照)を交差方向に変位させることが可能であり、原料面34の一側から他側へと平行な照射領域611~615(図6参照)を形成可能である。
A scanning direction adjustment mechanism 516 that rotates the rod 514 with respect to the case 511 is connected to the rod 514, and by rotating the rod 514 with the scanning direction adjustment mechanism 516, the mirror 512 is also moved to a predetermined traverse around the axis of the rod 514. It is rotatable over an angular range R2.
By rotating the rod 514 of the mirror 512 around the axis, it is possible to displace the irradiation area 61 (see FIG. 2) of the scanning beam 60 formed on the raw material surface 34 in the cross direction, so that one side of the raw material surface 34 It is possible to form parallel irradiation areas 611 to 615 (see FIG. 6) from one side to the other side.

走査制御部52は、走査機構515および走査方向調整機構516を制御することで、原料面34に半径方向の照射領域61(図2参照)を形成する径方向走査と、照射領域611~615(図6参照)により原料面34の略全面を走査する全面走査と、を実行可能である。 The scan control unit 52 controls the scanning mechanism 515 and the scanning direction adjustment mechanism 516 to perform radial scanning to form a radial irradiation area 61 (see FIG. 2) on the raw material surface 34 and irradiation areas 611 to 615 ( (see FIG. 6), it is possible to perform an entire surface scan in which substantially the entire surface of the raw material surface 34 is scanned.

装入物検出部53は、反射されてビーム照射部51に戻ってきたビームを検査することで、走査ビーム60を反射した原料面34または落下中の装入物32の位置を検出する。すなわち、走査ビーム60が原料面34で反射されて戻った際には、原料面34の表面プロフィールが測定され、落下中の装入物32が走査ビーム60を遮って反射された場合には、落下中の装入物32の落下位置が測定される。 The charge detection section 53 detects the position of the raw material surface 34 that reflected the scanning beam 60 or the falling charge 32 by inspecting the beam that has been reflected and returned to the beam irradiation section 51 . That is, when the scanning beam 60 is reflected back from the feed surface 34, the surface profile of the feed surface 34 is measured, and when the falling charge 32 intercepts the scanning beam 60 and is reflected, The falling position of the falling charge 32 is measured.

挙動測定部54は、装入物検出部53で検出された原料面34の表面プロフィールの経時的な変化から、原料面34における装入物32の堆積挙動を測定可能である。また、装入物検出部53で検出された落下中の装入物32の落下位置の経時的な変化から、装入物32の落下挙動を測定可能である。 The behavior measurement unit 54 can measure the deposition behavior of the charge 32 on the raw material surface 34 from the change over time in the surface profile of the raw material surface 34 detected by the charge detection unit 53. Further, the falling behavior of the charge 32 can be measured from the change over time in the falling position of the falling charge 32 detected by the charge detection unit 53.

装入物測定装置50により測定された原料面34における装入物32の堆積挙動、および装入物32の落下挙動は、装入制御装置40に送られ、旋回駆動機構22によるシュート21の旋回速度および装入物供給装置24からの装入物31の供給量の制御、および傾斜調整機構23によるシュート21の傾き角度の制御に利用される。 The deposition behavior of the charge 32 on the raw material surface 34 and the falling behavior of the charge 32 measured by the charge measuring device 50 are sent to the charging control device 40, and the swing drive mechanism 22 rotates the chute 21. It is used to control the speed and the amount of charge 31 supplied from the charge supply device 24, and to control the inclination angle of the chute 21 by the inclination adjustment mechanism 23.

このような本実施形態においては、通常は径方向走査を連続的に行う。
図2に示すように、径方向走査においては、走査ビーム60の照射領域61は、原料面34の半径方向に設定され、照射領域61の範囲で走査ビーム60による原料面34の位置検出が行われることで、原料面34の表面プロフィール341が測定される。表面プロフィール341は、原料面34の径方向位置Rと表面高さHとの関係で表される。
シュート21から散布される装入物32は、原料面34の所定半径領域に堆積し、周方向に一様と見なすことができる。従って、径方向走査の測定結果により、原料面34の全面の表面形状を把握することができる。
In this embodiment, radial scanning is normally performed continuously.
As shown in FIG. 2, in radial scanning, the irradiation area 61 of the scanning beam 60 is set in the radial direction of the raw material surface 34, and the position of the raw material surface 34 is detected by the scanning beam 60 within the range of the irradiation area 61. As a result, the surface profile 341 of the raw material surface 34 is measured. The surface profile 341 is expressed by the relationship between the radial position R and the surface height H of the raw material surface 34.
The charge 32 spread from the chute 21 is deposited in a predetermined radius area of the raw material surface 34 and can be considered uniform in the circumferential direction. Therefore, the entire surface shape of the raw material surface 34 can be grasped from the measurement results of the radial scan.

図3において、原料面34に装入物32が散布された際に(図3(A)参照)、装入物32が大きく盛り上がった塊35を形成し(図3(B)参照)、所定時間経過後に崩落して平坦な塊36に変化することがある(図3(C)参照)。
このような場合、装入物検出部53による1回の表面プロフィール341の測定では塊35から塊36への変化を測定することはむつかしい。
これに対し、本実施形態では、挙動測定部54は、装入物検出部53による表面プロフィール341の経時的な変化から、原料面34の堆積挙動を測定することができる。
In FIG. 3, when the charge 32 is spread on the raw material surface 34 (see FIG. 3(A)), the charge 32 forms a large lump 35 (see FIG. 3(B)), and After a period of time, it may collapse and turn into a flat mass 36 (see FIG. 3(C)).
In such a case, it is difficult to measure the change from lump 35 to lump 36 by measuring the surface profile 341 once by the charge detection unit 53.
On the other hand, in the present embodiment, the behavior measurement unit 54 can measure the deposition behavior of the raw material surface 34 based on the change over time of the surface profile 341 detected by the charge detection unit 53.

図4において、装入物32を散布しつつ走査ビーム60による径方向走査を連続的に行っている際に(図4(A)参照)、装入物32による塊35を形成し(図3(B)参照)、その表面プロフィール341が測定される。この塊35が崩落して平坦な塊36に変化した場合、先に測定した表面プロフィール341と整合しない状態となる。しかし、径方向走査が連続的に行われているため、その後の走査により塊36を含む表面プロフィール341が測定される(図3(C)参照)。
その結果、現状を反映した正確な表面プロフィール341が得られるとともに、経時的な変化から原料面34における堆積挙動を測定することができる。
In FIG. 4, when the charging material 32 is continuously scanned in the radial direction by the scanning beam 60 while dispersing the charging material 32 (see FIG. 4(A)), a lump 35 is formed by the charging material 32 (see FIG. 4(A)). (B)), its surface profile 341 is measured. If this mass 35 collapses into a flat mass 36, it will not match the previously measured surface profile 341. However, since the radial scans are performed continuously, subsequent scans measure the surface profile 341 including the mass 36 (see FIG. 3C).
As a result, an accurate surface profile 341 reflecting the current state can be obtained, and the deposition behavior on the raw material surface 34 can be measured from changes over time.

図5において、装入物測定装置50では、走査ビーム60により落下中の装入物32の落下軌跡を測定可能である。走査ビーム60は、前述のように通常は原料面34で反射されるが、シュート21の向きによっては装入物32が走査ビーム60を通過する。従って、走査ビーム60で落下中の装入物32の位置ないし落下軌跡を測定することができる。
とくに、シュート21の機構部分に摩耗やガタ等が生じ、測定された装入物32の落下軌跡が、走査制御部52における軌跡に対してずれている場合(図5(A)参照)、ずれに相当する角度θ分の補正を傾斜調整機構23で補正する等により、正しい散布状態(図5(B)参照)を回復することができる。
In FIG. 5, a charge measuring device 50 is capable of measuring the falling locus of a falling charge 32 using a scanning beam 60. The scanning beam 60 is normally reflected from the feed surface 34 as described above, but depending on the orientation of the chute 21 the charge 32 passes through the scanning beam 60. Therefore, the position or falling trajectory of the falling charge 32 can be measured using the scanning beam 60.
In particular, if there is wear or play in the mechanical part of the chute 21 and the measured falling trajectory of the charge 32 deviates from the trajectory in the scanning control unit 52 (see FIG. 5(A)), the deviation may occur. By using the inclination adjustment mechanism 23 to correct the angle θ corresponding to the angle θ, the correct dispersion state (see FIG. 5(B)) can be restored.

本実施形態においては、通常は径方向走査を連続的に行うとともに、間欠的に全面走査を行う。
図6に示すように、全面走査においては、径方向走査の照射領域61を交差方向に変位させて原料面34の略全面を走査する。具体的には、原料面34の一方の端部において短い照射領域611を形成し、これを交差方向に変位させて照射領域612のように原料面34の幅に応じて長さを長くしてゆく。そして、照射領域613において原料面34の中心を通過したら、照射領域614のように長さを縮めつつさらに変位させ、反対側の端部の照射領域615まで走査を行う。
これにより、原料面34の略全面を実際に走査することができ、径方向走査では検出できなかった原料面34の周方向の偏り等も測定することができる。
In this embodiment, radial scanning is normally performed continuously, and full-surface scanning is performed intermittently.
As shown in FIG. 6, in the entire surface scan, substantially the entire surface of the raw material surface 34 is scanned by displacing the irradiation area 61 for radial scanning in the cross direction. Specifically, a short irradiation area 611 is formed at one end of the raw material surface 34, and this is displaced in the cross direction to increase the length according to the width of the raw material surface 34, like the irradiation region 612. go. When the beam passes through the center of the raw material surface 34 in the irradiation area 613, it is further displaced while shortening the length like the irradiation area 614, and scans to the irradiation area 615 at the opposite end.
Thereby, substantially the entire surface of the raw material surface 34 can be actually scanned, and deviations in the circumferential direction of the raw material surface 34, which could not be detected by radial scanning, can also be measured.

本実施形態においては、高炉10の稼働状態に応じて連続的な径方向走査および間欠的に全面走査を行うことができる。
図7において、高炉10が稼働中は、装入装置20において装入動作C1が継続される。この期間、装入物測定装置50では、径方向走査S11を連続的に行うとともに、所定の期間ごとに全面走査S12,S13を実施する。
径方向走査S11または全面走査S12,S13において調整が必要な事項があった場合には、高炉休止時の本調整P2に先立って、装入動作C1と並行して予備調整P1を実施しておく。これにより、本調整P2の期間を短縮し、高炉休止期間の延長などを回避することができる。
In this embodiment, continuous radial scanning and intermittently full-surface scanning can be performed depending on the operating state of the blast furnace 10.
In FIG. 7, while the blast furnace 10 is in operation, the charging operation C1 is continued in the charging device 20. During this period, the charge measuring device 50 continuously performs the radial scan S11, and also performs the entire surface scans S12 and S13 at predetermined intervals.
If there are any matters that require adjustment in the radial direction scan S11 or the full surface scans S12 and S13, carry out preliminary adjustment P1 in parallel with the charging operation C1, prior to the main adjustment P2 when the blast furnace is shut down. . Thereby, the period of the main adjustment P2 can be shortened, and an extension of the blast furnace suspension period can be avoided.

例えば、旋回式のシュート21においては、摩耗やガタ等の影響により、傾動角の値に基準と差異が生じることがある。従来は、高炉10の予定休風の際に、シュート21のライナー摩耗量や傾動角のずれを測定し、これを基準値に調整していた。このような調整を含め、様々な調整を行う必要があるため、休風期間の延長が必要になることもあった。
これに対し、本実施形態では、装入物測定装置50により、操業中の装入物32の落下位置を測定することで、ライナー摩耗量や傾動角のずれが閾値以上になっていないかどうか把握することができ、図7の予備調整P1で対応することができる。また、予定休風のタイミングを早める等の対処をすることで、より早い段階で装入装置20の調整を実施することができる。
For example, in the rotating chute 21, the value of the tilting angle may differ from the standard due to the influence of wear, play, etc. Conventionally, when the blast furnace 10 was scheduled to be shut down, the liner wear amount and tilt angle deviation of the chute 21 were measured and adjusted to reference values. Because of the need to make various adjustments, including these adjustments, it was sometimes necessary to extend the wind break period.
In contrast, in this embodiment, by measuring the falling position of the charge 32 during operation using the charge measurement device 50, it is possible to check whether the amount of liner wear or the deviation of the tilt angle exceeds a threshold value. This can be understood and dealt with by preliminary adjustment P1 in FIG. Further, by taking measures such as advancing the timing of the scheduled wind break, it is possible to adjust the charging device 20 at an earlier stage.

高炉休止期間ののち、高炉10が再び稼働状態になると、装入装置20では装入動作C2が実行され、装入物測定装置50では、連続的な径方向走査S21および間欠的な全面走査S22,S23が実行される。 When the blast furnace 10 is put into operation again after the blast furnace suspension period, the charging device 20 performs the charging operation C2, and the charge measuring device 50 performs continuous radial scanning S21 and intermittent full-surface scanning S22. , S23 are executed.

以上説明した本実施形態によれば、以下のような効果が得られる。
本実施形態では、シュート21から装入物32の装入動作(図7の装入動作C1,C2)中に、並行して測定動作(図7の径方向走査S11,S21)を行う。走査ビーム60は二次元平面状に拡がりをもつため、原料面34には線状の照射領域61(図2参照)が形成される。
照射領域61では、原料面34の表面に堆積している装入物33の位置が検出され、これにより照射領域61に沿った原料面34の表面プロフィール341(図2参照)が測定できる。原料面34の表面プロフィール341は、原料面34の形状を示すとともに、連続して測定することで、その経時的な変化、つまり原料面34に装入物32が堆積してゆく状況や、堆積した装入物(塊35、図3参照)が崩落する状況など、原料面34での装入物32の堆積挙動を測定することができる。
さらに、装入物32の装入動作(C1,C2)と並行して測定(径方向走査S11,S21)するため、走査ビーム60により、原料面34に向けて落下中の装入物32を検出し、これにより装入物32の落下挙動を測定することができる。とくに、走査ビーム60が二次元平面状に拡がりをもつことで、同平面において装入物の落下軌跡として検出することができる(図5参照)。
このように、本実施形態により、装入物32の落下挙動および原料面34での堆積挙動をともに測定することができる。
According to this embodiment described above, the following effects can be obtained.
In this embodiment, during the charging operation of the charge 32 from the chute 21 (charging operations C1 and C2 in FIG. 7), a measuring operation (radial direction scans S11 and S21 in FIG. 7) is performed in parallel. Since the scanning beam 60 has a two-dimensional spread, a linear irradiation area 61 (see FIG. 2) is formed on the raw material surface 34.
In the irradiation region 61, the position of the charge 33 deposited on the surface of the raw material surface 34 is detected, and thereby the surface profile 341 (see FIG. 2) of the material surface 34 along the irradiation region 61 can be measured. The surface profile 341 of the raw material surface 34 shows the shape of the raw material surface 34, and by continuously measuring it, it can be measured over time, that is, the situation in which the charge 32 is deposited on the raw material surface 34, and the accumulation The deposition behavior of the charge 32 on the raw material surface 34 can be measured, such as the situation in which the charged charge (lump 35, see FIG. 3) collapses.
Furthermore, in order to measure (radial direction scanning S11, S21) in parallel with the charging operation (C1, C2) of the charge 32, the charge 32 falling toward the raw material surface 34 is detected by the scanning beam 60. This allows the falling behavior of the charge 32 to be measured. In particular, since the scanning beam 60 spreads in a two-dimensional plane, it is possible to detect the trajectory of the charge falling on the same plane (see FIG. 5).
In this way, according to this embodiment, both the falling behavior of the charge 32 and the deposition behavior on the raw material surface 34 can be measured.

本実施形態では、装入物32の装入動作C1,C2(図7参照)と並行して、原料面34を半径方向に走査する径方向走査S11,S21を連続的に行う。これにより、原料面34の中心部から外周縁に至る半径方向の照射領域61(図2参照)で、原料面34の表面プロフィール341を測定するとともに、装入物32の落下軌跡、および装入物32の原料面34での堆積挙動を測定することができる。
原料面34に散布される装入物32は、一般に点対称つまり周方向に一様であるため、任意の方向についての装入物32の落下挙動および原料面34での堆積挙動が測定できれば、他の方向についても同様と推定することができる。
このように、本実施形態では、限定的な範囲の走査ビーム60により、装入物32の落下挙動および原料面34での堆積挙動を、全面の走査に比べて効率的に測定することができる。
In this embodiment, radial scans S11 and S21 for scanning the raw material surface 34 in the radial direction are continuously performed in parallel with the charging operations C1 and C2 (see FIG. 7) of the charge 32. As a result, the surface profile 341 of the raw material surface 34 is measured in the radial irradiation area 61 (see FIG. 2) from the center of the raw material surface 34 to the outer periphery, and the falling trajectory of the charge 32 and the charging The deposition behavior of the material 32 on the raw material surface 34 can be measured.
Since the charge 32 scattered on the raw material surface 34 is generally point-symmetric, that is, uniform in the circumferential direction, if the falling behavior of the charge 32 in any direction and the deposition behavior on the raw material surface 34 can be measured, It can be estimated that the same applies to other directions.
Thus, in this embodiment, the scanning beam 60 with a limited range allows the falling behavior of the charge 32 and the deposition behavior on the raw material surface 34 to be measured more efficiently than when scanning the entire surface. .

本実施形態では、径方向走査S11,S21を連続的に行う間に、走査ビーム60を走査方向Dsと交差方向へ変位させつつ原料面34を走査する全面走査S12,S13,S22,S23を間欠的に行う。これにより、前述した原料面34の半径方向を走査方向Dsとする照射領域61への限定的な走査ビーム60に対し、これを交差方向へ変位させて照射領域611~615の走査を行うことで、原料面34のより広い範囲に走査ビーム60を照射することができ、原料面34の略全面をカバーすることもできる。
従って、通常は半径方向の照射領域61に対する連続的な径方向走査S11,S21により効率よく測定を行うとともに、所定間隔あるいは任意時点で全面走査S12,S13,S22,S23を行って径方向走査S11,S21の範囲外についても測定を行うことで、確実な測定結果を得ることができる。
In this embodiment, while the radial scans S11 and S21 are continuously performed, the entire surface scans S12, S13, S22, and S23 are performed intermittently to scan the raw material surface 34 while displacing the scanning beam 60 in a direction intersecting the scanning direction Ds. Do it on purpose. As a result, by displacing the limited scanning beam 60 to the irradiation area 61 whose scanning direction Ds is the radial direction of the raw material surface 34 described above, by displacing it in the cross direction and scanning the irradiation areas 611 to 615. , the scanning beam 60 can be irradiated over a wider range of the raw material surface 34, and substantially the entire surface of the raw material surface 34 can be covered.
Therefore, normally, measurements are carried out efficiently by continuous radial scans S11 and S21 on the radial irradiation area 61, and full-surface scans S12, S13, S22, and S23 are performed at predetermined intervals or at arbitrary times to perform radial scans S11 and S21. , S21, reliable measurement results can be obtained.

本実施形態では、装入物測定装置50で得られた測定結果に基づいて、装入制御装置40が装入装置20における装入動作を制御することができる。
とくに、装入物測定装置50による測定結果が、装入動作中(装入動作C1,C2、図7参照)に得られるため、その測定結果に基づいて装入動作中に調整を行うことができ、常に適切な装入動作を行うことができる。
In this embodiment, the charging control device 40 can control the charging operation in the charging device 20 based on the measurement results obtained by the charging material measuring device 50.
In particular, since the measurement results by the charge measuring device 50 are obtained during the charging operation (charging operations C1 and C2, see FIG. 7), it is possible to make adjustments during the charging operation based on the measurement results. This allows for proper charging operation at all times.

本実施形態では、装入制御装置40が、装入物測定装置50で得られた測定結果に基づいて、傾斜調整機構23によるシュート21の傾きを制御しつつ、旋回駆動機構22によるシュート21の旋回動作を制御することができ、常に適切な装入動作を行うことができる。 In this embodiment, the charging control device 40 controls the tilt of the chute 21 by the tilt adjustment mechanism 23 based on the measurement results obtained by the charge measuring device 50, and controls the tilt of the chute 21 by the swing drive mechanism 22. It is possible to control the turning operation and always perform an appropriate charging operation.

なお、本発明は前述した実施形態に限定されるものではなく、本発明の目的を達成できる範囲での変形などは本発明に含まれる。
前記実施形態では、径方向走査S11,S21を連続的に行う間に、走査ビーム60を走査方向Dsと交差方向へ変位させ、原料面34を略全面にわたって走査する全面走査S12,S13,S22,S23を間欠的に行うとしたが、全面走査S12等の頻度、タイミングなどは適宜選択してよい。
Note that the present invention is not limited to the embodiments described above, and the present invention includes modifications within the scope that can achieve the purpose of the present invention.
In the embodiment, while the radial scans S11 and S21 are continuously performed, the scanning beam 60 is displaced in a direction intersecting the scanning direction Ds, and the entire surface scans S12, S13, S22, which scan substantially the entire surface of the raw material surface 34 are performed. Although S23 is performed intermittently, the frequency, timing, etc. of the entire surface scan S12, etc. may be selected as appropriate.

全面走査S12,S13,S22,S23は、図6に示す照射領域611~615を経て原料面34の略全面を連続して二次元的に測定するものに限らず、照射領域611~615の5箇所においてそれぞれ走査方向Dsに沿った走査を行うようにしてもよい。この場合、照射領域611~615の間隔領域では原料面34を直接測定することができないが、間隔を狭めることで連続的な測定に準じる精度を確保でき、かつ作業効率を高めることもできる。 The entire surface scans S12, S13, S22, and S23 are not limited to continuous two-dimensional measurement of substantially the entire surface of the raw material surface 34 via the irradiation regions 611 to 615 shown in FIG. Scanning along the scanning direction Ds may be performed at each location. In this case, it is not possible to directly measure the raw material surface 34 in the interval between the irradiation areas 611 to 615, but by narrowing the interval, accuracy equivalent to continuous measurement can be ensured, and work efficiency can also be improved.

前記実施形態では、走査ビーム60を形成するためにビーム照射部51を用いたが、マイクロ波ないしミリ波を照射して原料面34に照射領域61が形成できれば、その具体的構成は適宜変更してよい。
なお、ミリ波とは、波長が1~10mm、周波数30~300GHzの電磁波である。マイクロ波については明確な定義がないが、例えば通信分野では波長が1~10cm、周波数3~30GHzの電磁波であり、サブミリ波(波長0.1~1mm)、ミリ波(波長1~10mm)を除けば、電波の中で最も短い波長域である。
In the embodiment described above, the beam irradiation unit 51 was used to form the scanning beam 60, but the specific configuration may be changed as appropriate if the irradiation region 61 can be formed on the raw material surface 34 by irradiating microwaves or millimeter waves. It's fine.
Note that millimeter waves are electromagnetic waves with a wavelength of 1 to 10 mm and a frequency of 30 to 300 GHz. There is no clear definition of microwaves, but in the communications field, for example, they are electromagnetic waves with wavelengths of 1 to 10 cm and frequencies of 3 to 30 GHz, and submillimeter waves (wavelengths of 0.1 to 1 mm) and millimeter waves (wavelengths of 1 to 10 mm). This is the shortest wavelength range of radio waves.

本発明は、装入物測定方法、装入方法、装入物測定装置および装入装置に利用できる。 INDUSTRIAL APPLICATION This invention can be utilized for a charge measuring method, a charging method, a charge measuring device, and a charging device.

10…高炉、11…炉頂、12…制御システム、20…装入装置、21…シュート、22…旋回駆動機構、23…傾斜調整機構、24…装入物供給装置、31,32,33…装入物、34…原料面、341…表面プロフィール、35…塊、36…塊、40…装入制御装置、41…装入制御部、42…傾斜制御部、50…装入物測定装置、51…ビーム照射部、511…ケース、512…ミラー、513…プローブ、514…ロッド、515…走査機構、516…走査方向調整機構、52…走査制御部、53…装入物検出部、54…挙動測定部、60…走査ビーム、61,611,612,613,614,615…照射領域、C1,C2…装入動作、Ds…走査方向、P1…予備調整、P2…本調整、R…径方向位置、R1…走査角度範囲、R2…トラバース角度範囲、S11,S21…径方向走査、S12,S13,S22,S23…全面走査。 DESCRIPTION OF SYMBOLS 10... Blast furnace, 11... Furnace top, 12... Control system, 20... Charging device, 21... Chute, 22... Turning drive mechanism, 23... Inclination adjustment mechanism, 24... Charge supply device, 31, 32, 33... Charge, 34... Raw material surface, 341... Surface profile, 35... Lump, 36... Lump, 40... Charge control device, 41... Charge control section, 42... Inclination control section, 50... Charge measuring device, 51... Beam irradiation section, 511... Case, 512... Mirror, 513... Probe, 514... Rod, 515... Scanning mechanism, 516... Scanning direction adjustment mechanism, 52... Scanning control section, 53... Charge detection section, 54... Behavior measurement unit, 60...Scanning beam, 61,611,612,613,614,615...Irradiation area, C1, C2...Charging operation, Ds...Scanning direction, P1...Preliminary adjustment, P2...Main adjustment, R...Diameter Direction position, R1...Scanning angle range, R2...Traverse angle range, S11, S21...Radial direction scanning, S12, S13, S22, S23...Full surface scanning.

Claims (7)

高炉内に充填された装入物の原料面に、マイクロ波ないしミリ波の走査ビームを照射し、前記走査ビームが照射された前記装入物の位置を検出することで、落下中の前記装入物の落下挙動、前記原料面の形状、および前記原料面での前記装入物の堆積挙動の少なくともいずれかを測定するとともに、
通常は前記走査ビームで前記原料面を半径方向に走査する径方向走査を連続的に行い、間欠的に前記走査ビームを走査方向と交差方向へ変位させつつ前記原料面を走査する全面走査を行うことを特徴とする装入物測定方法。
By irradiating the raw material surface of the charge filled in the blast furnace with a microwave or millimeter wave scanning beam and detecting the position of the charge irradiated with the scanning beam, the falling load can be detected. Measuring at least one of the falling behavior of the charge, the shape of the raw material surface, and the deposition behavior of the charge on the raw material surface,
Usually, radial scanning in which the scanning beam scans the raw material surface in the radial direction is performed continuously, and full-scale scanning is performed in which the raw material surface is scanned while intermittently displacing the scanning beam in a direction crossing the scanning direction. A charge measuring method characterized by:
請求項1に記載した装入物測定方法による測定結果に基づいて、前記装入物を装入する装入装置を制御することを特徴とする装入方法。 A charging method comprising controlling a charging device for charging the charge based on a measurement result obtained by the method for measuring the charge according to claim 1. 請求項に記載した装入方法において、
前記装入装置は旋回式のシュートを有し、
前記測定結果に基づいて前記シュートの傾斜角度および前記シュートの旋回状態の少なくともいずれかを制御することを特徴とする装入方法。
In the charging method according to claim 2 ,
The charging device has a rotating chute,
A charging method comprising controlling at least one of the inclination angle of the chute and the turning state of the chute based on the measurement results.
請求項2または請求項3に記載した装入方法において、
装入動作中に連続的な前記径方向走査および間欠的な前記全面走査を行い、
前記径方向走査または前記全面走査により調整が必要な事項があった場合には、前記装入動作と並行して予備調整を実施しておき、
高炉休止時に前記調整が必要な事項についての本調整を行うことを特徴とする装入方法。
In the charging method according to claim 2 or 3,
performing the continuous radial scanning and the intermittent full-surface scanning during a charging operation;
If there is an item that requires adjustment due to the radial direction scanning or the entire surface scanning, preliminary adjustment is performed in parallel with the charging operation,
A charging method characterized in that the main adjustment of the items requiring adjustment is performed when the blast furnace is shut down.
高炉内に充填された装入物の原料面に、マイクロ波ないしミリ波の走査ビームを照射するビーム照射部と、
前記走査ビームが照射された前記装入物の位置を検出する装入物検出部と、
落下中の前記装入物の落下挙動、前記原料面の形状、および前記原料面での前記装入物の堆積挙動の少なくともいずれかを測定する挙動測定部と、を有し、
前記ビーム照射部は、通常は前記走査ビームで前記原料面を半径方向に走査する径方向走査を連続的に行い、間欠的に前記走査ビームを走査方向と交差方向へ変位させつつ前記原料面を走査する全面走査を行うことを特徴とする装入物測定装置。
a beam irradiation unit that irradiates a microwave or millimeter wave scanning beam onto the raw material surface of the charge filled in the blast furnace;
a charge detection unit that detects the position of the charge irradiated with the scanning beam;
a behavior measurement unit that measures at least any of the falling behavior of the charge during falling, the shape of the raw material surface, and the deposition behavior of the charge on the raw material surface;
The beam irradiation unit normally performs continuous radial scanning in which the scanning beam scans the raw material surface in a radial direction, and intermittently displaces the scanning beam in a direction crossing the scanning direction while scanning the raw material surface. A charge measuring device characterized by scanning the entire surface.
請求項5に記載した装入物測定装置と、
前記装入物測定装置で測定された落下中の前記装入物の落下挙動、前記原料面の形状、および前記原料面での前記装入物の堆積挙動の少なくともいずれかに基づいて前記装入物の装入状態を制御する装入制御装置と、を有することを特徴とする装入装置。
A charge measuring device according to claim 5,
The charging is performed based on at least one of the falling behavior of the charge during falling measured by the charge measurement device, the shape of the raw material surface, and the accumulation behavior of the charge on the raw material surface. A charging device comprising: a charging control device that controls the charging state of objects.
請求項6に記載した装入装置において、
前記装入制御装置は、
装入動作中に連続的な前記径方向走査および間欠的な前記全面走査を行い、
前記径方向走査または前記全面走査により調整が必要な事項があった場合には、前記装入動作と並行して予備調整を実施しておき、
高炉休止時に前記調整が必要な事項についての本調整を行うことを特徴とする装入装置。
In the charging device according to claim 6,
The charging control device includes:
performing the continuous radial scanning and the intermittent full-surface scanning during a charging operation;
If there is an item that requires adjustment due to the radial direction scanning or the entire surface scanning, preliminary adjustment is performed in parallel with the charging operation,
A charging device characterized in that the main adjustment of the items requiring adjustment is performed when the blast furnace is shut down.
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