JP7453494B2 - ウエハー縁欠陥検査装置及び検査方法 - Google Patents
ウエハー縁欠陥検査装置及び検査方法 Download PDFInfo
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- JP7453494B2 JP7453494B2 JP2022543093A JP2022543093A JP7453494B2 JP 7453494 B2 JP7453494 B2 JP 7453494B2 JP 2022543093 A JP2022543093 A JP 2022543093A JP 2022543093 A JP2022543093 A JP 2022543093A JP 7453494 B2 JP7453494 B2 JP 7453494B2
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- wafer
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/27—Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9503—Wafer edge inspection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
Description
(特許文献2)KR10-2016-0068228A(2016年06月15日)
(特許文献3)KR10-2010-0023861A(2010年03月04日)
(特許文献4)KR10-2013-0049359A(2013年05月14日)
111:平面 112:裏面
113:垂直面 114:第1境界面
115:第2境界面 200:ウエハー把持部
210:接触体 220:ホルダー締結体
230:ホルダーアクチュエータ 240:駆動モーター
250:ホルダー作動カム 300:エッジ検測部
310:ライト 320:カメラ
321:第1カメラ 322:第2カメラ
330:検測ハウジング 331:反射部
332:拡散板 341:第1移送装置
342:第1移動制御器 351:照度器
352:照度制御器 361:第2移送装置
362:位置測定センサー 363:移送制御器
410:制御部 420:焦点制御器
430:レンズ駆動装置 510:ケース
S100:移送段階 S200:把持段階
S300:検知段階 S310:部分離脱段階
S320:照明段階 S330:撮影段階
S340:焦点調節段階 S350:照度調節段階
S500:欠陥判断段階S 410:ウエハー回転段階
S420:ウエハー移動段階
Claims (4)
- 板材形状のウエハー(100);
前記ウエハー(100)を固定するウエハー把持部(200);
前記ウエハー縁(110)の欠陥を検測するエッジ検測部(300);を含み、
前記ウエハー把持部(200)は、複数で設けられ、前記ウエハー(100)の面及び/又は縁と接触する接触体(210);を含み、
さらに、駆動モータ(240)によって回転され、複数の接触体(210)を同時に回転させるホルダ締結体(220);
前記接触体(210)を前記ホルダ締結体(220)内で個別に選択的に回転させるホルダアクチュエータ(230):を含み、
前記ホルダアクチュエータ(230)は、
前記接触体(210)と接触し、エッジ検知部(300)の干渉で動作するホルダ作動カム(250);を含む、ウエハー縁欠陥検査装置。 - 前記エッジ検測部(300)は、一定の照度の光を前記縁に発光するライト310;
前記ウエハー縁(110)を撮影するカメラ(320);を含む、請求項1に記載のウエハー縁欠陥検査装置。 - 前記カメラ(320)の画像情報を受信し、ウエハー縁(110)の欠陥の有無を判別する制御部(410);を含む、請求項2に記載のウエハー縁欠陥検査装置。
- 内部空間を形成し、前記ウエハー把持部(200)及び前記エッジ検測部(300)を収容するケース(510);
前記ケース(510)の外部と結合し、複数のウエハー(100)を収容するウエハーカートリッジ(520);
前記ウエハーカートリッジ(520)及び前記ウエハー把持部(200)にウエハー(100)を移送する移送ロボット(530);を含む、請求項1に記載のウエハー縁欠陥検査装置。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2020-0005414 | 2020-01-15 | ||
| KR1020200005414A KR102453258B1 (ko) | 2020-01-15 | 2020-01-15 | 웨이퍼 모서리 결함 검사장치 및 검사방법 |
| PCT/KR2020/007577 WO2021145516A1 (ko) | 2020-01-15 | 2020-06-11 | 웨이퍼 모서리 결함 검사장치 및 검사방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023517166A JP2023517166A (ja) | 2023-04-24 |
| JP7453494B2 true JP7453494B2 (ja) | 2024-03-21 |
Family
ID=76863832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022543093A Active JP7453494B2 (ja) | 2020-01-15 | 2020-06-11 | ウエハー縁欠陥検査装置及び検査方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7453494B2 (ja) |
| KR (1) | KR102453258B1 (ja) |
| CN (1) | CN115088060B (ja) |
| WO (1) | WO2021145516A1 (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113884506B (zh) * | 2021-09-15 | 2024-08-02 | 杭州中欣晶圆半导体股份有限公司 | 一种硅片边缘及表面自动化视觉检测系统及检测方法 |
| CN114088724B (zh) * | 2021-11-20 | 2023-08-18 | 深圳市北科检测科技有限公司 | 一种显示屏边缘缺陷检测装置 |
| KR20240077236A (ko) | 2022-11-24 | 2024-05-31 | 삼성전자주식회사 | 반도체 공정 장치 및 반도체 공정 시스템 |
| CN118777311B (zh) * | 2024-07-19 | 2025-05-30 | 深圳市盛麦客精密模切有限公司 | 基于视觉检测的破膜刀质量检测方法、设备及介质 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012216754A (ja) | 2011-03-30 | 2012-11-08 | Dainippon Screen Mfg Co Ltd | 基板検査装置および基板検査方法 |
| JP2013527925A (ja) | 2010-05-06 | 2013-07-04 | アルタテック・セミコンダクター | 移動中半導体ウエハの検査装置およびその方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3629244B2 (ja) * | 2002-02-19 | 2005-03-16 | 本多エレクトロン株式会社 | ウエーハ用検査装置 |
| JP5002961B2 (ja) * | 2006-01-11 | 2012-08-15 | ソニー株式会社 | 欠陥検査装置及び欠陥検査方法 |
| JP4358889B1 (ja) | 2008-06-27 | 2009-11-04 | 日本エレクトロセンサリデバイス株式会社 | ウエーハ欠陥検査装置 |
| KR101001113B1 (ko) | 2008-11-12 | 2010-12-14 | 주식회사 코로 | 웨이퍼 결함의 검사장치 및 검사방법 |
| KR101207470B1 (ko) * | 2010-11-16 | 2012-12-03 | 한미반도체 주식회사 | 웨이퍼 검사장치 및 이를 구비한 웨이퍼 검사 시스템 |
| KR101297209B1 (ko) | 2011-11-04 | 2013-08-16 | (주)오로스 테크놀로지 | 반도체용 웨이퍼 결함 검사방법 |
| US9645097B2 (en) * | 2014-06-20 | 2017-05-09 | Kla-Tencor Corporation | In-line wafer edge inspection, wafer pre-alignment, and wafer cleaning |
| KR20160050112A (ko) * | 2014-10-28 | 2016-05-11 | 주식회사 트라이비스 | 라인 스캔 카메라를 이용한 솔라셀 웨이퍼 측면 검사 시스템 |
| KR102350549B1 (ko) | 2014-12-05 | 2022-01-14 | 세메스 주식회사 | 웨이퍼 결함 검사 장치 |
| JP6601119B2 (ja) * | 2015-10-05 | 2019-11-06 | 株式会社Sumco | エピタキシャルウェーハ裏面検査装置およびそれを用いたエピタキシャルウェーハ裏面検査方法 |
| KR102062120B1 (ko) * | 2018-02-09 | 2020-01-06 | 코리아테크노주식회사 | 웨이퍼 치핑 검사시스템과 웨이퍼 치핑 검사방법 |
-
2020
- 2020-01-15 KR KR1020200005414A patent/KR102453258B1/ko active Active
- 2020-06-11 CN CN202080096090.2A patent/CN115088060B/zh active Active
- 2020-06-11 JP JP2022543093A patent/JP7453494B2/ja active Active
- 2020-06-11 WO PCT/KR2020/007577 patent/WO2021145516A1/ko not_active Ceased
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013527925A (ja) | 2010-05-06 | 2013-07-04 | アルタテック・セミコンダクター | 移動中半導体ウエハの検査装置およびその方法 |
| JP2012216754A (ja) | 2011-03-30 | 2012-11-08 | Dainippon Screen Mfg Co Ltd | 基板検査装置および基板検査方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102453258B1 (ko) | 2022-10-11 |
| CN115088060B (zh) | 2025-09-05 |
| KR20210092001A (ko) | 2021-07-23 |
| JP2023517166A (ja) | 2023-04-24 |
| WO2021145516A1 (ko) | 2021-07-22 |
| CN115088060A (zh) | 2022-09-20 |
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