JP7456181B2 - Semiconductor device and its manufacturing method, film adhesive, and dicing/die bonding integrated film - Google Patents

Description

The present disclosure relates to a semiconductor device, a method for manufacturing the same, a film adhesive, and a dicing/die bonding integrated film.

2. Description of the Related Art Electronic devices such as mobile phones, PCs, and microwave ovens are equipped with a large number of semiconductor devices, which are electronic components, inside the electronic devices. Electromagnetic noise may be generated from some circuits inside these electronic devices. 2. Description of the Related Art Semiconductor devices may suffer from inconveniences due to electromagnetic noise, and therefore semiconductor devices installed in electronic devices require measures to eliminate or reduce electromagnetic noise. Semiconductor devices are generally manufactured by mounting a semiconductor chip on a substrate. Patent Document 1 describes that in such a semiconductor device, a conductive shielding film (electromagnetic shielding film) is provided on the top surface of the semiconductor chip (the surface opposite to the substrate of the semiconductor chip) and the side surface to reduce electromagnetic noise. It has been disclosed that the function of shielding is provided.

International Publication No. 2013/035819

By the way, in the above semiconductor device, electromagnetic noise may be generated from the wiring of the substrate on which the semiconductor chip is mounted. When such electromagnetic wave noise occurs, an electromotive force is generated in a sensor circuit or the like of a semiconductor chip mounted on a substrate, which may cause a problem different from the original performance. In order to prevent such inconveniences, semiconductor devices are required to have a function for eliminating or reducing electromagnetic noise even on the lower surface of the semiconductor chip (the surface on the substrate side of the semiconductor chip).

A main object of the present disclosure is to provide a semiconductor device including a semiconductor chip and a substrate on which the semiconductor chip is mounted, in which the influence of electromagnetic noise generated from the substrate on the semiconductor chip is sufficiently reduced. shall be.

When the present inventor conducted studies to solve the above-mentioned problems, he discovered that the above-mentioned problems could be solved by purposely providing a metal layer in the bonded portion where insulation is required, and the present invention was completed.

One aspect of the present disclosure relates to a semiconductor device. The semiconductor device includes a semiconductor chip, a substrate on which the semiconductor chip is mounted, and an adhesive section that is provided between the semiconductor chip and the substrate and adheres the semiconductor chip and the substrate. The adhesive portion includes (at least) a cured adhesive layer and a metal layer provided on the cured adhesive layer, and the cured adhesive layer is provided on the substrate. According to such a semiconductor device, the influence of electromagnetic wave noise generated from the substrate on the semiconductor chip can be sufficiently reduced mainly due to the metal layer in the adhesive portion.

The cured adhesive layer may be a layer made of a cured thermosetting resin composition containing a thermosetting resin, a curing agent, and a polymer component.

The metal constituting the metal layer may be a metal exhibiting an electrical conductivity of 40×10 ⁶ S/m or more at 0° C., and may be at least one metal selected from the group consisting of gold, silver, and copper. It's okay.

Another aspect of the present disclosure relates to a method for manufacturing the above semiconductor device.

One aspect (first aspect) of the method for manufacturing the semiconductor device includes a step of preparing a film adhesive having (at least) an adhesive layer and a metal layer provided on the adhesive layer, and a step of preparing a semiconductor chip and a substrate. A film adhesive is interposed between the semiconductor chip and the substrate so that the adhesive layer is on the substrate side, and the semiconductor chip and the substrate are bonded to each other.

Another aspect (second aspect) of the method for manufacturing the semiconductor device includes a dicing tape having a base material layer and an adhesive layer provided on the base material layer, an adhesive layer and a dicing tape provided on the adhesive layer. A step of preparing a dicing/die bonding integrated film comprising a film-like adhesive having (at least) a metal layer, and a base material layer, an adhesive layer, an adhesive layer, and a metal layer are arranged in this order. , a step of attaching a film adhesive of a dicing/die bonding integrated film to the semiconductor wafer, and a step of dividing the semiconductor wafer and the film adhesive into pieces to produce semiconductor chips having adhesive layer pieces and metal layer pieces. a step of picking up the semiconductor chip having the adhesive layer piece and the metal layer piece from the adhesive layer; and a step of picking up the semiconductor chip having the adhesive layer piece and the metal layer piece from the adhesive layer piece; and a step of bonding the semiconductor chip and the substrate via.

Another aspect of the present disclosure relates to a film adhesive for bonding a semiconductor chip and a substrate. The film adhesive includes an adhesive layer and a metal layer provided on the adhesive layer. Such a film adhesive can be suitably used in the method for manufacturing a semiconductor device according to the first aspect described above. According to such a film adhesive, it is possible to sufficiently reduce the influence of electromagnetic wave noise generated from the substrate on the semiconductor chip. The film adhesive can be suitably used as an electromagnetic shielding film. Further, such a film adhesive can have excellent reflow properties. Therefore, it can also be suitably used in a method for manufacturing a semiconductor device that includes a step of heating and melting using a reflow oven. Furthermore, the film adhesive can have excellent moisture absorption reflow resistance (reliability test).

The adhesive layer may be a layer made of a thermosetting resin composition containing a thermosetting resin, a curing agent, and a polymer component.

The metal constituting the metal layer may be a metal exhibiting an electrical conductivity of 40×10 ⁶ S/m or more at 0° C., and may be at least one metal selected from the group consisting of gold, silver, and copper. It's okay.

Another aspect of the present disclosure relates to a dicing/die bonding integrated film. The dicing/die bonding integrated film includes a dicing tape having a base material layer and an adhesive layer provided on the base material layer, and the above film adhesive. The base material layer, adhesive layer, adhesive layer, and metal layer are arranged in this order. Such a dicing/die bonding integrated film can be suitably used in the method for manufacturing a semiconductor device according to the second embodiment.

According to the present disclosure, there is provided a semiconductor device including a semiconductor chip and a substrate on which the semiconductor chip is mounted, in which the influence of electromagnetic noise generated from the substrate on the semiconductor chip is sufficiently reduced, and a method for manufacturing the same. be done. Further, according to the present disclosure, a film adhesive and a dicing/die bonding integrated film used in such a method of manufacturing a semiconductor device are provided. The film adhesive can sufficiently reduce the influence of electromagnetic noise generated from the substrate on the semiconductor chip.

FIG. 1(a) is a schematic cross-sectional view showing one embodiment of a semiconductor device, and FIG. 1(b) is a schematic cross-sectional view showing another embodiment of the semiconductor device. Ru. FIG. 2 is a schematic cross-sectional view showing one embodiment of a film adhesive. FIG. 3 is a schematic sectional view for explaining one embodiment of a method for manufacturing a semiconductor device, and FIGS. 3(a), (b), (c), (d), (e), and (f) FIG. 2 is a schematic cross-sectional view showing each step.

Embodiments of the present disclosure will be described in detail below with reference to the drawings. However, the present invention is not limited to the following embodiments. In this specification, "(meth)acrylic acid" means acrylic acid or methacrylic acid, and "(meth)acrylate" means acrylate or a methacrylate corresponding thereto. "A or B" may include either A or B, or may include both.

In this specification, the term "layer" includes not only a structure formed on the entire surface but also a structure formed on a part of the layer when observed in a plan view. In addition, in this specification, the term "process" does not only refer to an independent process, but also refers to a process that cannot be clearly distinguished from other processes, as long as the intended effect of the process is achieved. included. Furthermore, a numerical range indicated using "~" indicates a range that includes the numerical values written before and after "~" as the minimum and maximum values, respectively.

In this specification, when there are multiple substances corresponding to each component in the composition, unless otherwise specified, the content of each component in the composition refers to the total amount of the multiple substances present in the composition. means. Further, unless otherwise specified, the exemplified materials may be used alone or in combination of two or more. Furthermore, in the numerical ranges described stepwise in this specification, the upper limit or lower limit of the numerical range of one step may be replaced with the upper limit or lower limit of the numerical range of another step. Further, in the numerical ranges described in this specification, the upper limit or lower limit of the numerical range may be replaced with the value shown in the Examples.

[Semiconductor device]
FIG. 1(a) is a schematic cross-sectional view showing one embodiment of a semiconductor device. A semiconductor device 100 shown in FIG. 1A includes a semiconductor chip Wa, a substrate 2 on which the semiconductor chip Wa is mounted, and an adhesive provided between the semiconductor chip Wa and the substrate 2 to bond the semiconductor chip Wa and the substrate 2. 8. That is, the semiconductor chip Wa is bonded via the adhesive portion 8 to the substrate 2 on which the semiconductor chip Wa is mounted. In the semiconductor device, for example, the semiconductor chip Wa and the substrate 2 may be electrically connected by wire bonding, or the semiconductor chip Wa may be resin-sealed using a resin sealant. The semiconductor device may have a structure in which a plurality of semiconductor chips are stacked, for example. According to such a semiconductor device, the influence of electromagnetic wave noise generated from the substrate on the semiconductor chip can be sufficiently reduced mainly due to the metal layer in the adhesive portion.

Examples of the semiconductor chip Wa include semiconductor chips made of elemental semiconductors made of the same type of elements such as silicon and germanium, and semiconductor chips made of compound semiconductors such as gallium arsenide and indium phosphide. These semiconductor chips may include integrated circuits such as IC, LSI, VLSI, etc. The thickness of the semiconductor chip Wa may be, for example, 10 to 800 μm.

The substrate 2 is not particularly limited as long as it is used to mount the semiconductor chip Wa, and examples include various substrates such as ceramic substrates, organic substrates, and metal substrates, semiconductor chips, and semiconductor wafers. The thickness of the substrate 2 may be, for example, 10 to 3000 μm.

The adhesive part 8 has at least a cured adhesive layer 4c and a metal layer 6 provided on the cured adhesive layer 4c, and the cured adhesive layer 4c is formed on the substrate 2 (the surface 2A of the substrate 2). (The cured adhesive layer 4c is provided in contact with the substrate 2 (surface 2A of the substrate 2).) Since the adhesive portion 8 mainly includes the metal layer 6, it is possible to sufficiently reduce the influence of electromagnetic wave noise generated from the substrate on the semiconductor chip. Note that the adhesive part 8 is not limited to a two-layer structure consisting of the cured adhesive layer 4c and the metal layer 6, and in contrast to the two-layer structure of the cured adhesive layer 4c and the metal layer 6, It may be a three-layer structure in which a cured adhesive layer 4c is further laminated on the cured adhesive layer 4c and the cured adhesive layer 4c and the metal layer 6. The structure may include four or more layers stacked alternately. The adhesive portion 8 may have, for example, a structure of ten layers or less. As the number of metal layers 6 increases, the adhesive portion 8 tends to be able to more sufficiently reduce the influence of electromagnetic noise generated from the substrate on the semiconductor chip. Note that the semiconductor chip Wa can be placed either on the cured adhesive layer 4c or on the metal layer 6.

The thickness of the adhesive part 8 may be, for example, 20 μm or more, 30 μm or more, or 50 μm or more, and 3250 μm or less, 2000 μm or less, or 1500 μm or less.

FIG. 1(b) is a schematic cross-sectional view showing another embodiment of the semiconductor device. The semiconductor device 110 shown in FIG. 1(b) is different from the semiconductor device 100 shown in FIG. 1(a) in that the adhesive portion 8 further includes a cured adhesive layer 4c on the metal layer 6. It is a point. That is, the adhesive part 8 has a three-layer structure including a cured adhesive layer 4c, a metal layer 6, and a cured adhesive layer 4c in this order.

In one embodiment, the cured adhesive layer 4c is a layer made of a cured thermosetting resin composition. The thickness of the cured adhesive layer 4c may be, for example, 5 μm or more, 10 μm or more, or 15 μm or more, and 150 μm or less, 100 μm or less, or 50 μm or less. When a plurality of cured adhesive layers 4c are present in the adhesive portion 8, the types of components constituting the cured adhesive layers 4c, the thicknesses of the cured adhesive layers 4c, etc. may be the same or different. It's okay.

The metal layer 6 is a layer made of metal, and is mainly used to block electromagnetic noise. The metal constituting the metal layer 6 is not particularly limited as long as it can block electromagnetic noise, but generally speaking, the higher the electrical conductivity, the higher the electromagnetic shielding property. The metal constituting the metal layer 6 may be, for example, a metal that exhibits an electrical conductivity at 0° C. of 40×10 ⁶ S/m or more. The electrical conductivity of the metal constituting the metal layer 6 at 0° C. may be 45×10 ⁶ S/m or more or 50×10 ⁶ S/m or more. Further, specific examples of the metal constituting the metal layer 6 include metals such as gold, silver, copper, and aluminum, and alloys of these metals. The metal constituting the metal layer 6 may be, for example, at least one metal selected from the group consisting of gold, silver, and copper. The thickness of the metal layer 6 may be, for example, 5 μm or more, 10 μm or more, or 15 μm or more, and 250 μm or less, 200 μm or less, or 150 μm or less. When a plurality of metal layers 6 are present in the adhesive portion 8, the type of metal constituting the metal layer 6, the thickness of the metal layer 6, etc. may be the same or different.

[Method for manufacturing semiconductor device]
(First aspect)
A first aspect of the method for manufacturing a semiconductor device includes a step of preparing a film adhesive having an adhesive layer and a metal layer provided on the adhesive layer (hereinafter sometimes referred to as (X1) step). , a step of bonding the semiconductor chip and the substrate by interposing a film adhesive between the semiconductor chip and the substrate so that the adhesive layer is on the substrate side (hereinafter sometimes referred to as the (X2) step). Equipped with.

<(X1) process>
In this step, a film adhesive is prepared. FIG. 2 is a schematic cross-sectional view showing one embodiment of a film adhesive. The film adhesive 10 shown in FIG. 2 has at least an adhesive layer 4 and a metal layer 6 provided on the adhesive layer 4. The film adhesive 10 may be provided on the support film so that the adhesive layer 4 and the support film are in contact with each other. The film-like adhesive is not limited to a two-layer structure consisting of the adhesive layer 4 and the metal layer 6, but may be further bonded on the metal layer 6 with respect to the two-layer structure of the adhesive layer 4 and the metal layer 6. It may have a three-layer structure in which the adhesive layer 4 is laminated, or it may have a four-layer structure or more in which the adhesive layer 4 and the metal layer 6 are further alternately laminated. It's okay. As the number of metal layers 6 increases, the adhesive portion 8 tends to be able to more sufficiently reduce the influence of electromagnetic noise generated from the substrate on the semiconductor chip. Below, a mode of manufacturing the semiconductor device shown in FIG. 1(a) mainly using the film adhesive 10 shown in FIG. 2 will be explained in detail. For example, the film adhesive 10 having a two-layer structure consisting of the adhesive layer 4 and the metal layer 6 can be produced using a method comprising the steps of producing the adhesive layer 4 and producing the metal layer 6 on the adhesive layer 4. It can be manufactured by

The adhesive layer 4 is a layer made of a thermosetting resin composition, and is a layer that can go through a semi-cured (B stage) state and become a fully cured adhesive layer 4c (C stage) state after curing treatment. It is. One embodiment of the thermosetting resin composition includes a thermosetting resin (hereinafter sometimes referred to as component (A)), a curing agent (hereinafter sometimes referred to as component (B)), and a polymer component. (hereinafter sometimes referred to as component (C)).

Component (A): Thermosetting resin Component (A) is a component that has the property of forming three-dimensional bonds between molecules and curing by heating or the like, and is a component that exhibits adhesive action after curing. Examples of the component (A) include epoxy resins and acrylic resins. The weight average molecular weight (Mw) or molecular weight of component (A) may be less than 10,000.

The epoxy resin is not particularly limited as long as it has one or more epoxy groups in the molecule, but examples thereof include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolac type epoxy resin, bisphenol F novolac type epoxy resin, stilbene type epoxy resin, triazine skeleton-containing epoxy resin, fluorene skeleton-containing epoxy resin, triphenol methane type epoxy resin, biphenyl type epoxy resin, xylylene type epoxy resin, biphenyl aralkyl type epoxy resin, naphthalene type epoxy resin, dicyclopentadiene type epoxy resin, polyfunctional phenols, diglycidyl ether compounds of polycyclic aromatics such as anthracene, etc. These may be used alone or in combination of two or more.

The acrylic resin is not particularly limited as long as it has one or more (meth)acryloyl groups in the molecule, but examples include bisphenol A, bisphenol F, naphthalene, phenol novolac, cresol novolac, phenol aralkyl, biphenyl, and triphenol. Examples include (meth)acrylates having a skeleton derived from a compound selected from phenylmethane, dicyclopentadiene, fluorene, adamantane, and isocyanuric acid and a (meth)acryloyloxy group, various polyfunctional (meth)acrylic compounds, and the like. These may be used alone or in combination of two or more. The number of (meth)acryloyl groups (number of functional groups) in the acrylic resin may be 3 or less. When the number of functional groups is 3 or less, the thermosetting resin composition can be sufficiently cured in a short time, so that a decrease in the curing reaction rate can be further suppressed. If the curing reaction rate is low, unreacted groups may remain.

The weight average molecular weight (Mw) or molecular weight of component (A) may be less than 10,000, may be 8,000 or less, 7,000 or less, 6,000 or less, or 5,000 or less, or may be 100 or more, or 300 or more. . The weight average molecular weight (Mw) is a value measured by gel permeation chromatography (GPC) and converted using a standard polystyrene calibration curve.

The content of component (A) may be 10 to 50% by mass, based on the total amount of the thermosetting resin composition, and may be 15% by mass or more, 20% by mass or more, or 25% by mass or more. , 45% by mass or less, or 40% by mass or less. When the content of component (A) is 10% by mass or more based on the total amount of the thermosetting resin composition, it tends to be possible to sufficiently control the flow of the resin after curing. When the content of component (A) is 50% by mass or less based on the total amount of the thermosetting resin composition, it tends to be possible to prevent the cured product from becoming too hard and causing large warpage of the substrate. .

Component (B): Curing agent Component (B) is a component that acts as a curing agent for component (A). Examples of the curing agent include phenolic curing agents, acid anhydride curing agents, amine curing agents, imidazole curing agents, phosphine curing agents, azo compounds, and organic peroxides. When component (A) is an epoxy resin, the curing agent may be a combination of a phenolic curing agent and an imidazole curing agent, or an acid anhydride curing agent and an imidazole curing agent, from the viewpoints of handling, storage stability, and curability. It may be a combination with a curing agent, an amine curing agent and an imidazole curing agent, or an imidazole curing agent alone. When component (A) is an acrylic resin, the curing agent may be an azo compound alone or an organic peroxide alone from the viewpoints of handleability and storage stability.

Examples of the phenolic curing agent include bisphenol A, bisphenol F, bisphenol S, 4,4'-biphenylphenol, tetramethylbisphenol A, dimethylbisphenol A, tetramethylbisphenol F, dimethylbisphenol F, tetramethylbisphenol S, and dimethyl. Bisphenol S, tetramethyl-4,4'-biphenol, dimethyl-4,4'-biphenylphenol, 1-(4-hydroxyphenyl)-2-[4-(1,1-bis-(4-hydroxyphenyl)) ethyl)phenyl]propane, 2,2'-methylene-bis(4-methyl-6-tert-butylphenol), 4,4'-butylidene-bis(3-methyl-6-tert-butylphenol), trishydroxyphenylmethane , resorcinol, hydroquinone, pyrogallol, phenolic compounds having a diisopropylidene skeleton; phenolic compounds having a fluorene skeleton such as 1,1-di-4-hydroxyphenylfluorene; cresol compounds; ethylphenol compounds; butylphenol compounds; octylphenol compounds; bisphenols A, novolak resins made from various phenols such as bisphenol F, bisphenol S, and naphthol compounds, phenol novolak resins containing xylylene skeletons, phenol novolak resins containing dicyclopentadiene skeletons, phenol novolak resins containing biphenyl skeletons, and phenol novolak resins containing fluorene skeletons. , various novolak resins such as furan skeleton-containing phenol novolak resins. These may be used alone or in combination of two or more.

When component (A) is an epoxy resin, the equivalent ratio of the hydroxyl groups of the phenolic resin curing agent to the epoxy groups of component (A) (hydroxyl group equivalent of phenolic resin curing agent/epoxy group equivalent of component (A)) is: From the viewpoint of curability, adhesiveness, and storage stability, it may be 0.3 to 1.5, 0.4 to 1.0, or 0.5 to 1.0. When the equivalence ratio is 0.3 or more, the curability tends to improve and the adhesive strength is further improved, and when the equivalence ratio is 1.5 or less, unreacted phenolic hydroxyl groups may remain in excess. This tends to result in lower water absorption and improved reliability.

Examples of acid anhydride curing agents include phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic anhydride, ethylene glycol trimellitic anhydride, biphenyltetracarboxylic anhydride, etc. Aromatic carboxylic acid anhydrides; anhydrides of aliphatic carboxylic acids such as azelaic acid, sebacic acid, dodecanedioic acid, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, nadic acid anhydride, het acid anhydride, Examples include alicyclic carboxylic acid anhydrides such as Himic acid anhydride. These may be used alone or in combination of two or more.

When component (A) is an epoxy resin, the equivalent ratio of the acid anhydride group of the acid anhydride curing agent to the epoxy group of the component (A) (acid anhydride group equivalent of the acid anhydride curing agent/(A) The epoxy group equivalent of the component may be 0.3 to 1.5, 0.4 to 1.0, or 0.5 to 1.0 from the viewpoint of curability, adhesiveness, and storage stability. . When the equivalent ratio is 0.3 or more, the curability tends to improve and the adhesive strength is further improved, and when the equivalent ratio is 1.5 or less, unreacted acid anhydride groups remain in excess. This tends to reduce water absorption and improve reliability.

Examples of the amine curing agent include aromatic curing agents such as diaminodiphenylmethane, diaminodiphenylsulfone, diaminodiphenyl ether, p-phenylenediamine, m-phenylenediamine, o-phenylenediamine, 1,5-diaminonaphthalene, and m-xylylenediamine. Aliphatic amines such as amines, ethylenediamine, diethylenediamine, hexamethylenediamine, isophoronediamine, bis(4-amino-3-methyldicyclohexyl)methane, polyetherdiamine; guanidines such as dicyandiamide, 1-(o-tolyl) biguanide, etc. Examples include compounds. These may be used alone or in combination of two or more.

When component (A) is an epoxy resin, the equivalent ratio of the amino group of the amine curing agent to the epoxy group of the component (A) (amino group equivalent of the amine curing agent/epoxy group equivalent of the component (A)) is: From the viewpoint of curability, adhesiveness, and storage stability, it may be 0.3 to 1.5, 0.4 to 1.0, or 0.5 to 1.0. When the equivalent ratio is 0.3 or more, the curability tends to improve and the adhesive strength is further improved, and when the equivalent ratio is 1.5 or less, unreacted amino groups may remain in excess. There is a tendency for reliability to improve.

Examples of imidazole curing agents include 2-methylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 2-phenyl-4-methylimidazole, 1 -Benzyl-2-phenylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole, 2,3-dihydro -1H-pyrrolo-[1,2-a]benzimidazole, 2,4-diamino-6(2'-methylimidazole(1'))ethyl-s-triazine, 2,4-diamino-6(2'- undecylimidazole (1')) ethyl-s-triazine, 2,4-diamino-6 (2'-ethyl-4-methylimidazole (1')) ethyl-s-triazine, 2,4-diamino-6 ( 2'-Methylimidazole (1') ethyl-s-triazine isocyanuric acid adduct, 2-methylimidazole isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-3,5-dihydroxymethylimidazole, Examples include 2-phenyl-4-methyl-5-hydroxymethylimidazole and 1-cyanoethyl-2-phenyl-3,5-dicyanoethoxymethylimidazole. These may be used alone or in combination of two or more. Moreover, these may be microencapsulated and used as a latent curing agent.

The content of the imidazole-based curing agent may be 0.1 to 20 parts by mass or 0.1 to 10 parts by mass per 100 parts by mass of the epoxy resin. If the content of the imidazole-based curing agent is 0.1 parts by mass or more per 100 parts by mass of the epoxy resin, the curing property tends to be further improved, and if it is 20 parts by mass or less, storage stability tends to be maintained.

Examples of the phosphine curing agent include triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphoniumtetra(4-methylphenyl)borate, and tetraphenylphosphonium(4-fluorophenyl)borate. These may be used alone or in combination of two or more.

The content of the phosphine curing agent may be 0.1 to 10 parts by weight or 0.1 to 5 parts by weight based on 100 parts by weight of the epoxy resin. When the content of the phosphine curing agent is 0.1 parts by mass or more based on 100 parts by mass of the epoxy resin, the curability tends to be further improved, and when the content is 10 parts by mass or less, the storage stability is improved. It tends to be maintainable.

The phenolic curing agent, the acid anhydride curing agent, and the amine curing agent may each be used alone, or two or more of these may be used in combination as a mixture. The imidazole curing agent and the phosphine curing agent may be used alone, but they are preferably used in combination with any one of a phenol curing agent, an acid anhydride curing agent, or an amine curing agent.

Examples of the azo compound include dimethylaminoazobenzene, dimethylaminoazobenzene-carboxylic acid, diethylaminoazobenzene, diethylaminoazobenzene-carboxylic acid, and the like. These may be used alone or in combination of two or more.

The content of the azo compound may be 0.5 to 10 parts by weight or 1 to 5 parts by weight based on 100 parts by weight of the acrylic resin. When the content of the azo compound is 0.5 parts by mass or more based on 100 parts by mass of the acrylic resin, the curability tends to be further improved, and when the content is 10 parts by mass or less, the curing progresses rapidly. Since the number of reactive points decreases without any reaction, the molecular chain becomes sufficiently long and unreacted groups tend to be less likely to remain.

Examples of organic peroxides include ketone peroxides, peroxyketals, hydroperoxides, dialkyl peroxides, diacyl peroxides, peroxydicarbonates, peroxy esters, etc. These may be used alone or in combination of two or more. From the viewpoint of storage stability, the organic peroxide may be a hydroperoxide, a dialkyl peroxide, or a peroxy ester, and from the viewpoint of heat resistance, it may be a hydroperoxide or a dialkyl peroxide.

The content of the organic peroxide may be 0.5 to 10 parts by weight or 1 to 5 parts by weight based on 100 parts by weight of the acrylic resin. When the content of the organic peroxide is 0.5 parts by mass or more based on 100 parts by mass of the acrylic resin, the curability tends to be further improved, and when the content is 10 parts by mass or less, the curing tends to be rapid. Since the reaction does not proceed and the number of reaction points decreases, the molecular chain becomes sufficiently long and unreacted groups tend to be less likely to remain.

Component (C): Polymer component The weight average molecular weight (Mw) or molecular weight of component (C) may be 10,000 or more. The weight average molecular weight or molecular weight of components other than component (C), such as component (A) and component (B), may generally be less than 10,000. Component (C) includes, for example, epoxy resin, phenoxy resin, polyimide resin, polyamide resin, polycarbodiimide resin, cyanate ester resin, acrylic resin, polyester resin, polyethylene resin, polyether sulfone resin, polyetherimide resin, polyvinyl acetal. Examples include resin, urethane resin, acrylic rubber, and the like. These may be used alone or in combination of two or more. Component (C) may be an epoxy resin, a phenoxy resin, a polyimide resin, an acrylic resin, an acrylic rubber, a cyanate ester resin, or a polycarbodiimide resin from the viewpoint of heat resistance and film forming properties; It may be polyimide resin, acrylic resin, or acrylic rubber.

When component (A) is an epoxy resin, the content of the epoxy resin is 0.01 to 5 parts by mass, 0.05 to 4 parts by mass, or 0.1 to 4 parts by mass, per 1 part by mass of component (C). It may be 3 parts by mass. When the content of the epoxy resin is 0.01 parts by mass or more per 1 part by mass of component (C), the curability tends to improve and the adhesive strength is further improved, and when the content is 5 parts by mass or less. , the thermosetting resin composition tends to have better film-forming properties and film-forming properties.

When component (A) is an acrylic resin, the content of the acrylic resin is 0.01 to 10 parts by mass, 0.05 to 5 parts by mass, or 0.1 to 5 parts by mass per 1 part by mass of component (C). It may be 5 parts by mass. When the content of the acrylic resin is 0.01 parts by mass or more per 1 part by mass of component (C), the curability tends to improve and the adhesive strength is further improved, and when the content is 10 parts by mass or less. , the thermosetting resin composition tends to have better film-forming properties and film-forming properties.

The glass transition temperature (Tg) of component (C) may be 160° C. or lower or 140° C. or lower from the viewpoint of adhesion of the thermosetting resin composition to substrates and chips. The Tg of component (C) may be -50°C or higher or 0°C or higher. When the Tg of the polymer component is 160° C. or less, it can be mounted by pressure bonding with a bonder or lamination with a laminator without forming voids on unevenness of electrodes, wiring, patterns, etc. formed on a substrate or chip. In this specification, Tg is determined by differential scanning calorimetry using a DSC (Model DSC-7 manufactured by PerkinElmer) with a sample amount of 10 mg, a heating rate of 10°C/min, and a measurement atmosphere of air. means value.

The weight average molecular weight (Mw) of component (C) may be 30,000 or more, 40,000 or more, or 50,000 or more, and may be 1,200,000 or less, 900,000 or less, or 600,000 or less. The weight average molecular weight (Mw) is a value measured by gel permeation chromatography (GPC) and converted using a standard polystyrene calibration curve.

The thermosetting resin composition may further contain a filler (hereinafter sometimes referred to as component (D)) in addition to component (A), component (B), and component (C).

(D) Component: Filler Examples of the (D) component include inorganic fillers, resin fillers, and the like. Examples of the inorganic filler include insulating inorganic fillers such as glass, silica, alumina, titanium oxide, carbon black, mica, and boron nitride. Examples of the resin filler include polyurethane, polyimide, methyl methacrylate resin, methyl methacrylate-butadiene-styrene copolymer resin (MBS), and the like. These may be used alone or in combination of two or more, and may be used in combination with an inorganic filler and a resin filler. The shape and particle size of component (D) are not particularly limited.

The physical properties of the filler may be appropriately adjusted by surface treatment. The filler may be a surface-treated filler from the viewpoint of improving dispersibility and adhesive strength. Examples of the surface treatment agent include glycidyl-based (epoxy-based), amine-based, phenyl-based, phenylamino-based, (meth)acrylic-based, and vinyl-based compounds.

The surface treatment is preferably silane treatment using a silane compound such as an epoxysilane, aminosilane, or acrylic silane for ease of surface treatment. The surface treatment agent may be a compound selected from glycidyl-based, phenylamino-based, acrylic-based, and methacrylic-based compounds from the viewpoint of excellent dispersibility, fluidity, and adhesive strength. From the viewpoint of storage stability, the surface treatment agent may be a compound selected from phenyl, acrylic, and methacrylic compounds.

Since resin fillers can provide flexibility at high temperatures such as 260° C. compared to inorganic fillers, reflow resistance can be improved by using resin fillers. Furthermore, since the resin filler can impart flexibility, it also contributes to improving the film-forming properties of the thermosetting resin composition.

The content of component (D) may be 10 to 90% by mass or 20 to 80% by mass based on the total amount of the thermosetting resin composition. When the content of component (D) is 10% by mass or more based on the total amount of the thermosetting resin composition, the moisture absorption rate tends to be further reduced, and when it is 90% by mass or less, the viscosity There is a tendency for the fluidity of the thermosetting resin composition to improve while suppressing the

Other components The thermosetting resin composition further contains an ion scavenger, an antioxidant, a silane coupling agent, a titanium coupling agent, an antioxidant, a rheology control agent, a leveling agent, etc. as other components. It's okay. The content of these components may be 0.01 to 3% by mass based on the total amount of the thermosetting resin composition.

The adhesive layer 4 is made of, for example, a thermosetting resin composition containing the above-mentioned components (A) to (C) and, if necessary, component (D) and other components, in the form of a film. It can be produced by molding into. The adhesive layer 4 can also be formed, for example, by applying a thermosetting resin composition to the support film. In this case, it may be formed using a varnish of a thermosetting resin composition obtained by diluting the thermosetting resin composition with a solvent. When using a varnish of a thermosetting resin composition, the film-like adhesive layer 4 can be formed by applying the varnish to a support film and removing the solvent by heating and drying.

Examples of the solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene and p-cymene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; tetrahydrofuran and 1,4-dioxane. Cyclic ethers; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, γ-butyrolactone; Examples include carbonic acid esters such as ethylene carbonate and propylene carbonate; amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. These may be used alone or in combination of two or more. Among these, the solvent may be toluene, xylene, methyl ethyl ketone, methyl isobutyl ketone, or cyclohexanone from the viewpoint of solubility and boiling point. The concentration of solid components in the varnish may be 10 to 80% by weight based on the total weight of the varnish of the thermosetting resin composition.

The varnish of the thermosetting resin composition can be prepared by mixing and kneading the above-mentioned components (A) to (C), and if necessary, component (D) and other components. Note that the order of mixing and kneading each component is not particularly limited and can be set as appropriate. Mixing and kneading can be carried out using an appropriate combination of dispersing machines such as a conventional stirrer, a sieve machine, a three-roll mill, a ball mill, and a bead mill. After preparing the varnish of the thermosetting resin composition, air bubbles in the varnish may be removed by vacuum degassing or the like.

Examples of the support film include films of polytetrafluoroethylene, polyethylene, polypropylene, polymethylpentene, polyethylene terephthalate, polyimide, and the like. The thickness of the support film may be, for example, 10-200 μm or 20-170 μm.

As a method for applying the varnish of the thermosetting resin composition to the support film, known methods can be used, such as knife coating method, roll coating method, spray coating method, gravure coating method, bar coating method, curtain coating method, etc. Examples include the coating method. The heating drying conditions are not particularly limited as long as the solvent used is sufficiently volatilized, but may be, for example, at 50 to 200° C. for 0.1 to 90 minutes.

The thickness of the adhesive layer 4 can be adjusted as appropriate depending on the application, and may be, for example, 5 μm or more, 10 μm or more, or 15 μm or more, and 150 μm or less, 100 μm or less, or 50 μm or less. .

As a method for producing the metal layer 6 on the adhesive layer 4, for example, a metal foil of a predetermined thickness of the metal constituting the metal layer 6 is prepared, and the metal foil and the adhesive layer 4 are bonded together using a roll laminator. and a method of forming the metal layer 6 of a predetermined thickness on the adhesive layer 4 by sputtering, plating, etc. using the metal constituting the metal layer 6. Conditions for sputtering, plating, etc. can be appropriately set to obtain a predetermined thickness.

In this way, a two-layer film-like adhesive 10 consisting of an adhesive layer 4 and a metal layer 6 can be produced. A three-layer film-like adhesive and a four-layer or more film-like adhesive can be produced by repeating the steps performed when producing a two-layer film-like adhesive on the metal layer 6 of the two-layer film-like adhesive 10. The thickness of the film-like adhesive (two-layer, three-layer, or four-layer or more) may be, for example, 20 μm or more, 30 μm or more, or 50 μm or more, and may be 3250 μm or less, 2000 μm or less, or 1500 μm or less.

In a film adhesive, when a plurality of adhesive layers 4 are present, the types of components constituting the adhesive layer 4, the thicknesses of the adhesive layers 4, etc. may be the same or different. In the film adhesive, when a plurality of metal layers 6 are present, the type of metal constituting the metal layer 6, the thickness of the metal layer 6, etc. may be the same or different.

<(X2) process>
This step is a step of bonding a semiconductor chip and a substrate using the film adhesive obtained in step (X1). In the semiconductor device shown in FIG. 1A, for example, a film adhesive 10 is interposed between the semiconductor chip Wa and the substrate 2 so that the adhesive layer 4 is on the substrate 2 side, and these are bonded under heat and pressure. , can be obtained by bonding the semiconductor chip Wa and the substrate 2. The heating temperature in thermocompression bonding is usually 20 to 250°C, the load is usually 0.1 to 200N, and the heating time is usually 0.1 to 300 seconds. Note that by such heat-pressing, the adhesive layer 4 can become a cured adhesive layer 4c.

As a method for interposing the film adhesive 10 between the semiconductor chip Wa and the substrate 2, for example, the film adhesive 10 is cut out to match the size of the semiconductor chip Wa, and this is pasted on the semiconductor chip Wa. , a method of producing a semiconductor chip with a film adhesive and attaching it to the substrate 2 via the film adhesive. After producing a semiconductor chip (described later) having an adhesive layer piece and a metal layer piece in advance, A method of pasting it on the substrate 2 can be mentioned.

(Second Aspect)
3 is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing a semiconductor device, and FIGS. 3(a), (b), (c), (d), (e), and (f) are schematic cross-sectional views showing each step. A second aspect of the method for manufacturing a semiconductor device includes a step of preparing a dicing/die-bonding integrated film (hereinafter sometimes referred to as step (Y1)) that includes a dicing tape having a base layer and a pressure-sensitive adhesive layer provided on the base layer, and a film-like adhesive having an adhesive layer and a metal layer provided on the adhesive layer, and in which the base layer, the pressure-sensitive adhesive layer, the adhesive layer, and the metal layer are arranged in this order, and a step of attaching the film-like adhesive of the dicing/die-bonding integrated film to a semiconductor wafer (hereinafter sometimes referred to as step (Y2)). See FIGS. 3(a) and (b). . ), a step of producing a semiconductor chip having an adhesive layer piece and a metal layer piece by dividing the semiconductor wafer and the film-like adhesive (hereinafter, sometimes referred to as the (Y3) step. See FIG. 3(c)), a step of picking up the semiconductor chip having the adhesive layer piece and the metal layer piece from the adhesive layer (hereinafter, sometimes referred to as the (Y4) step. See FIG. 3(e)), and a step of bonding the semiconductor chip and the substrate via the adhesive layer piece and the metal layer piece using the semiconductor chip having the adhesive layer piece and the metal layer piece (hereinafter, sometimes referred to as the (Y5) step. See FIG. 3(f)). In the following, an embodiment of manufacturing the semiconductor device shown in FIG. 1(a) using the film-like adhesive 10 shown in FIG. 2 as the film-like adhesive will be described in detail.

<(Y1) process>
In this process, a dicing/die bonding integrated film is prepared. As shown in FIG. 3(a), the dicing/die bonding integrated film 20 includes a dicing tape 16 having a base layer 12 and an adhesive layer 14 provided on the base layer 12, an adhesive layer 4, and an adhesive layer 14. A film adhesive 10 having a metal layer 6 provided on an adhesive layer 4 is provided, and a base material layer 12, an adhesive layer 14, an adhesive layer 4, and a metal layer 6 are arranged in this order. In the dicing/die bonding integrated film 20, the film adhesive 10 may be provided with a support film.

Examples of the base layer 12 in the dicing tape 16 include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. Further, the base material layer 12 may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, etching treatment, etc., as necessary.

The adhesive layer 14 in the dicing tape 16 may be a layer made of an adhesive used in the field of dicing tapes. The adhesive may be either a pressure sensitive adhesive or a UV curable adhesive. When the adhesive is an ultraviolet curable adhesive, the adhesive layer 14 may have a property that its adhesiveness decreases when irradiated with ultraviolet rays.

The dicing/die bonding integrated film 20 is produced by preparing the dicing tape 16 and the film adhesive 10 and pasting the adhesive layer 4 of the film adhesive 10 onto the adhesive layer 14 of the dicing tape 16. I can do it.

<(Y2) process>
In this step, first, the dicing/die bonding integrated film 20 is placed in a predetermined device. Subsequently, the metal layer 6 (surface 6A of the metal layer 6) of the film adhesive 10 of the dicing/die bonding integrated film 20 is attached to the surface Ws of the semiconductor wafer W (see FIGS. 3(a) and 3(b)). ). Examples of the semiconductor wafer W include semiconductor wafers made of elemental semiconductors made of the same type of elements such as silicon and germanium, and semiconductor wafers made of compound semiconductors such as gallium arsenide and indium phosphide. It is preferable that the circuit surface of the semiconductor wafer W is provided on the surface opposite to the front surface Ws.

<(Y3) process>
In this step, at least the semiconductor wafer W and the film adhesive 10 are diced (see FIG. 3(c)). Thereby, it is possible to cut the semiconductor wafer into a predetermined size and produce semiconductor chips having a plurality of individualized adhesive layer pieces and metal layer pieces. Examples of the dicing method include a cutting method called full cut in which cuts are made to the dicing tape, a method in which half cuts are made in the semiconductor wafer and the semiconductor wafer is divided by cooling and pulling, and a cutting method using a laser. The dicing device is not particularly limited, and any conventionally known device can be used.

When the adhesive forming the adhesive layer 14 is an ultraviolet curable adhesive, the method for manufacturing a semiconductor device of this embodiment may be applied to the adhesive layer 14 (via the base layer 12) as necessary. The method may further include a step of irradiating ultraviolet rays (see FIG. 3(d)). By irradiating the adhesive layer 14 with ultraviolet rays, the UV-curable adhesive in the adhesive layer 14 is cured, and the adhesive force between the adhesive layer 14 and the adhesive layer 4 of the film adhesive 10 is increased. can be lowered. This facilitates peeling off the semiconductor chip having the adhesive layer piece and the metal layer piece. In the ultraviolet irradiation, it is preferable to use ultraviolet rays with a wavelength of 200 to 400 nm. As for the ultraviolet irradiation conditions, it is preferable to adjust the illumination intensity and irradiation amount to a range of 30 to 240 mW/cm ² and a range of 50 to 500 mJ/cm ² , respectively.

<(Y4) process>
In this step, the semiconductor chip 30 having an adhesive layer piece and a metal layer piece is picked up from the adhesive layer 14 or the adhesive layer piece 14a in which the adhesive layer 14 has been diced into pieces. An example of the pickup will be described below. First, by expanding the base material layer 12, the semiconductor chips 30 having diced adhesive layer pieces and metal layer pieces are separated from each other, and the adhesive layer pieces are pushed up from the base material layer 12 side with a needle 32. The semiconductor chip 30 having the metal layer piece is sucked by the suction collet 34 and picked up from the adhesive layer 14 (adhesive layer piece 14a) (see FIG. 3(e)). Note that the semiconductor chip 30 having an adhesive layer piece and a metal layer piece may be composed of an adhesive layer piece 4a, a metal layer piece 6a, and a semiconductor chip Wa. The adhesive layer pieces 4a are obtained by cutting the adhesive layer 4 into pieces by dicing, the metal layer pieces 6a are obtained by cutting the metal layer 6 into pieces by dicing, and the semiconductor chips Wa are obtained by cutting the semiconductor wafer W into pieces. It was separated into individual pieces by dicing. The adhesive layer 14 or the adhesive layer piece 14a may remain on the base material layer 12 when the semiconductor chip 30 having the adhesive layer piece and the metal layer piece is picked up. In the pick-up process, it is not necessarily necessary to expand the base material layer 12, but by expanding the base material layer 12, the pick-up performance can be further improved.

<(Y5) process>
In this step, using the semiconductor chip 30 having an adhesive layer piece and a metal layer piece, the adhesive layer piece 4a is attached to the surface 2A of the substrate 2, and the semiconductor chip Wa and the substrate 2 are bonded by heat and pressure. . The conditions for hot press bonding may be the same as the hot press conditions for the first aspect. In addition, by such heat compression bonding, the adhesive layer piece 4a can become an adhesive cured product layer piece 4ac. In this way, the semiconductor device 120 can be manufactured.

The manufacturing method of the semiconductor device includes a step of electrically connecting the semiconductor chip Wa and the substrate 2 by wire bonding, as necessary, and a step of attaching the semiconductor chip Wa to the resin sealing material using a resin sealing material on the surface 2A of the substrate 2. It may further include a step of sealing, a step of heating and melting using a reflow oven, and the like.

The present disclosure will be explained below with reference to Examples, but the present invention is not limited to these Examples.

[Preparation of film adhesive]
(Example 1)
<Preparation of varnish of thermosetting resin composition>
The composition ratios (unit: parts by mass) of each component are shown in Table 1, and the solvent is cyclohexanone was added thereto, and a mixture was obtained by stirring and mixing. Component (C) (polymer component) was added to the mixture and stirred until each component became uniform, thereby preparing a varnish of a thermosetting resin composition.

Details of each component are as follows.
(A) Component: Thermosetting resin (A-1) Multifunctional solid epoxy resin containing triphenolmethane skeleton (product name: EP1032H60, manufactured by Japan Epoxy Resin Co., Ltd., weight average molecular weight: 800-2000)
(A-2) Bisphenol F type liquid epoxy resin (product name: YL983U, manufactured by Japan Epoxy Resin Co., Ltd., molecular weight: approximately 336)
(A-3) Flexible semi-solid epoxy resin (product name: YL7175-1000, manufactured by Japan Epoxy Resin Co., Ltd., weight average molecular weight: 1000-5000)
(B) Component: Curing agent (B-1) 2,4-diamino-6 (2'-methylimidazole (1')) ethyl-s-triazine isocyanuric acid adduct (product name: 2MAOK-PW, Shikoku Kasei Co., Ltd. company)
(C) Component: Polymer component (C-1) Phenoxy resin (product name: ZX1356-2, manufactured by Toto Kasei Co., Ltd., Tg: about 71°C, Mw: about 63000)
(D) Component: Filler (D-1) Inorganic filler (D-1-1) Silica (product name: SE2050, manufactured by Admatex Co., Ltd., average particle size: 0.5 μm)
(D-1-2) Phenyl surface-treated nanosilica (product name: YA050C-SP, manufactured by Admatex Co., Ltd., average particle size: approximately 50 nm)
(D-2) Resin filler (D-2-1) Core-shell type organic fine particles (product name: EXL-2655, manufactured by Rohm and Haas Japan Co., Ltd.)

<Preparation of adhesive layer>
The prepared thermosetting resin composition varnish was filtered through a 100 mesh filter and degassed under vacuum. A polyethylene terephthalate (PET) film having a thickness of 38 μm and subjected to a mold release treatment was prepared as a support film, and a varnish of a thermosetting resin composition after vacuum defoaming was applied onto the PET film. The applied varnish of the thermosetting resin composition was heated and dried in two stages: at 90° C. for 5 minutes and then at 130° C. for 5 minutes to obtain an adhesive layer in a B-stage state. The thickness of the adhesive layer was adjusted to 20 μm depending on the amount of varnish of the thermosetting resin composition applied.

<Preparation of film adhesive>
As a metal layer, a 35 μm thick copper foil (VLP copper foil, manufactured by Furukawa Electric Co., Ltd.) was prepared. The adhesive layer and metal layer obtained above were bonded together at 100° C. using a roll laminator (product name: Laminator Hot Dog, manufactured by Lamy Corporation). Subsequently, by bonding an adhesive layer on the metal layer in the same manner, the film adhesive of Example 1 having a three-layer structure of adhesive layer/metal layer/adhesive layer (thickness: 75 μm) was obtained. ) was obtained.

(Example 2)
The film adhesive of Example 2 has a four-layer structure of adhesive layer/metal layer/adhesive layer/metal layer by further providing a metal layer on one adhesive layer of the film adhesive of Example 1. (Thickness: 110 μm) was obtained.

(Example 3)
An adhesive layer and a metal layer were further provided on the metal layer of the film adhesive of Example 2 to obtain a six-layer configuration of adhesive layer/metal layer/adhesive layer/metal layer/adhesive layer/metal layer. A film adhesive (thickness: 165 μm) of Example 3 was obtained.

(Comparative example 1)
The adhesive layer obtained above was used as it was as a film adhesive in Comparative Example 1. The film-like adhesive of Comparative Example 1 has a single-layer structure including only an adhesive layer and does not have a metal layer.

[Evaluation of film adhesive]
<Evaluation of electromagnetic wave shielding performance>
Film adhesives of Examples 1 to 3 and Comparative Example 1 measuring 150 mm x 150 mm were prepared as samples. Measurement was performed using these samples by the KEC method. The measurement was performed using an electric field and a magnetic field, and the electric field shield value (unit: dB) and magnetic field shield value (unit: dB) at a frequency of 100 kHz were determined. In the measurement, a spectrum analyzer (product name: N9010A, manufactured by Agilent Technologies, Inc.) and a signal generator (product name: N5183A, manufactured by Agilent Technologies, Inc.) were used. It can be said that the higher the numerical value, the better the electromagnetic wave shielding property. The results are shown in Table 2.

From Table 2, the film adhesives of Examples 1 to 3 had better electromagnetic wave shielding properties than the film adhesive of Comparative Example 1. Therefore, it is presumed that in the semiconductor devices using the film adhesives of Examples 1 to 3, the influence of electromagnetic wave noise generated from the substrate on the semiconductor chip is sufficiently reduced.

2... Substrate, 4... Adhesive layer, 4a... Adhesive layer piece, 4c... Adhesive cured material layer, 4ac... Adhesive cured material layer piece, 6... Metal layer, 6a... Metal layer piece, 8... Adhesive part, DESCRIPTION OF SYMBOLS 10... Film adhesive, 12... Base material layer, 14... Adhesive layer, 14... Adhesive layer, 14a... Adhesive layer piece, 16... Dicing tape, 20... Dicing/die bonding integrated film, 30... Adhesion Semiconductor chip having agent layer piece and metal layer piece, 32... Needle, 34... Suction collet, 100, 110, 120... Semiconductor device.

Claims (11)

semiconductor chip,
a substrate on which the semiconductor chip is mounted;
an adhesive part provided between the semiconductor chip and the substrate and adhesively bonding the semiconductor chip and the substrate;
Equipped with
The adhesive portion includes a first cured adhesive layer and a first metal layer provided on the first cured adhesive layer, and the first cured adhesive layer includes a first cured adhesive layer and a first metal layer provided on the first cured adhesive layer. Provided on the substrate, a cured adhesive layer and a metal layer are further alternately laminated on the two layers of the first cured adhesive layer and the first metal layer, and the layer has four or more layers. A semiconductor device having a structure of layers or less . Claim: The first cured adhesive layer and the cured adhesive layer are layers made of a cured thermosetting resin composition containing a thermosetting resin, a curing agent, and a polymer component. 1. The semiconductor device according to 1. 3. The semiconductor device according to claim 1 , wherein the metal constituting the first metal layer and the metal layer is a metal exhibiting an electrical conductivity at 0° C. of 40×10 ⁶ S/m or more. 3. The semiconductor device according to claim 1 , wherein the metal constituting the first metal layer and the metal layer is at least one metal selected from the group consisting of gold, silver, and copper. A method for manufacturing a semiconductor device according to any one of claims 1 to 4, comprising:
a first adhesive layer and a first metal layer provided on the first adhesive layer; A step of preparing a film-like adhesive having a structure of four or more layers and ten or less layers, in which adhesive layers and metal layers are further laminated alternately;
interposing the film adhesive between the semiconductor chip and the substrate so that the first adhesive layer is on the substrate side, and bonding the semiconductor chip and the substrate;
A method for manufacturing a semiconductor device, comprising: A method for manufacturing a semiconductor device according to any one of claims 1 to 4, comprising:
a dicing tape having a base material layer and an adhesive layer provided on the base material layer; a first adhesive layer and a metal layer provided on the first adhesive layer; and a film-like adhesive, in which an adhesive layer and a metal layer are further alternately laminated on the two layers of the adhesive layer and the first metal layer, and has a structure of four or more layers and ten or less layers , A dicing method in which the base material layer, the adhesive layer, the first adhesive layer , the first metal layer , and a layer in which the adhesive layer and the metal layer are further laminated alternately are arranged in this order. a step of preparing a die bonding integrated film;
a step of attaching the film adhesive of the dicing/die bonding integrated film to a semiconductor wafer;
A step of dividing the semiconductor wafer and the film adhesive into pieces to produce a semiconductor chip having a first adhesive layer piece , a first metal layer piece , an adhesive layer piece, and a metal layer piece ;
picking up a semiconductor chip having the first adhesive layer piece , the first metal layer piece , the adhesive layer piece, and the metal layer piece from the adhesive layer;
Using a semiconductor chip having the first adhesive layer piece , the first metal layer piece , the adhesive layer piece, and the metal layer piece, the first adhesive layer piece , the first metal layer piece , bonding the semiconductor chip and the substrate via the adhesive layer piece and the metal layer piece ;
A method for manufacturing a semiconductor device, comprising: A film adhesive for bonding a semiconductor chip and a substrate,
a first adhesive layer; and a first metal layer provided on the first adhesive layer; , a film adhesive having a structure of four or more layers and ten or less layers, in which adhesive layers and metal layers are further laminated alternately . The film-like adhesive according to claim 7 , wherein the first adhesive layer and the adhesive layer are layers made of a thermosetting resin composition containing a thermosetting resin, a curing agent, and a polymer component. agent. The film-like adhesive according to claim 7 or 8, wherein the metal constituting the first metal layer and the metal layer is a metal exhibiting an electrical conductivity at 0° C. of 40×10 ⁶ S/m or more. 9. The film-like adhesive according to claim 7 or 8, wherein the metal constituting the first metal layer and the metal layer is at least one metal selected from the group consisting of gold, silver, and copper. A dicing tape having a base layer and an adhesive layer provided on the base layer;
The film adhesive according to any one of claims 7 to 10,
Equipped with
Dicing, wherein the base material layer, the adhesive layer, the first adhesive layer , the first metal layer, and a layer in which the adhesive layer and the metal layer are further alternately laminated are arranged in this order.・Die bonding integrated film.

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