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JP7465703B2 - Resin molding for sealing optical semiconductors and method for producing same - Google Patents
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JP7465703B2 - Resin molding for sealing optical semiconductors and method for producing same - Google Patents

Resin molding for sealing optical semiconductors and method for producing same Download PDF

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JP7465703B2
JP7465703B2 JP2020060951A JP2020060951A JP7465703B2 JP 7465703 B2 JP7465703 B2 JP 7465703B2 JP 2020060951 A JP2020060951 A JP 2020060951A JP 2020060951 A JP2020060951 A JP 2020060951A JP 7465703 B2 JP7465703 B2 JP 7465703B2
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optical semiconductor
resin composition
melt viscosity
molding
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JP2021163782A (en
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龍介 内藤
実 山根
曉 松尾
拓人 萩原
真也 大田
直子 姫野
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Nitto Denko Corp
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Priority to KR1020210007851A priority patent/KR102925903B1/en
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
    • C08G59/4215Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof cycloaliphatic
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H10F19/804Materials of encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • H10H20/854Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0362Manufacture or treatment of packages of encapsulations
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Epoxy Resins (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
  • Led Device Packages (AREA)

Description

本発明は、光半導体封止用樹脂成形物およびその製造方法に関する。 The present invention relates to a resin molded product for sealing optical semiconductors and a method for producing the same.

光半導体素子は、セラミックパッケージまたはプラスチックパッケージによって封止され装置化されている。ここで、セラミックパッケージは、構成材料が比較的高価であること、量産性に劣ることから、プラスチックパッケージを用いることが主流となっている。なかでも、作業性、量産性、信頼性の点で、エポキン樹脂組成物を、予めタブレット状に打錠成形したものをトランスファーモールド成形する技術が主流となっている。 Optical semiconductor elements are sealed in ceramic or plastic packages and assembled into devices. However, ceramic packages are mainly used because the constituent materials are relatively expensive and are not suitable for mass production. Among these, the technology of transfer molding an epoxy resin composition that has been compressed into tablets in advance has become mainstream in terms of workability, mass production, and reliability.

ところで、プラスチックパッケージに使用する光半導体封止用のエポキシ樹脂組成物では、エポキシ樹脂、硬化剤、硬化促進剤の各成分は比較的分散しにくく、全体を均一に混合分散させることが容易でないため、硬化反応が不均一となって成形むらや成形ボイドが発生しやすいという問題がある。これらのムラやボイドに起因し、光学ムラを生じ、光半導体装置の信頼性を損なうという問題がある。 However, in epoxy resin compositions for sealing optical semiconductors used in plastic packages, the individual components of the epoxy resin, curing agent, and curing accelerator are relatively difficult to disperse, and it is not easy to mix and disperse them uniformly as a whole, which causes the problem that the curing reaction is non-uniform and molding irregularities and molding voids are likely to occur. These irregularities and voids cause optical irregularities, which impair the reliability of the optical semiconductor device.

これらの課題を解決するために、特許文献1では、エポキシ樹脂組成物を非常に細かく微粉砕したものを用いてタブレット化することにより、組成物の均一分散性を確保し、成形ムラや成形ボイドを低減して、光学ムラを無くす技術が開示されている。さらに、特許文献2では、エポキシ樹脂組成物を粒状に造粒してタブレット化する技術が開示されている。 To solve these problems, Patent Document 1 discloses a technique in which an epoxy resin composition is very finely ground and then tableted, thereby ensuring uniform dispersion of the composition, reducing molding irregularities and molding voids, and eliminating optical irregularities. Furthermore, Patent Document 2 discloses a technique in which an epoxy resin composition is granulated into granules and tableted.

特開平3-3258号公報Japanese Patent Application Laid-Open No. 3-3258 特開2011-9394号公報JP 2011-9394 A

本発明は、光半導体生産における生産マージンが広く、安定してトランスファー成形可能な光半導体封止用樹脂成形物と、その製造方法を提供することを目的とする。 The present invention aims to provide a resin molded product for sealing optical semiconductors that has a wide production margin and can be stably transferred molded in optical semiconductor production, as well as a manufacturing method thereof.

本発明は、重量平均分子量Mwと数平均分子量Mnの比である分子量分布Mw/Mnが2.7以下である樹脂を含む光半導体封止用樹脂成形物に関する。 The present invention relates to a resin molded product for sealing optical semiconductors, which contains a resin having a molecular weight distribution Mw/Mn, which is the ratio of weight average molecular weight Mw to number average molecular weight Mn, of 2.7 or less.

前記樹脂の重量平均分子量Mwが3000~7000であり、数平均分子量Mnが1500~2600であることが好ましい。 It is preferable that the weight average molecular weight Mw of the resin is 3000 to 7000, and the number average molecular weight Mn is 1500 to 2600.

また、本発明は、EMMI(Epoxy Molding Materials Institute)規格1-66に準じ、金型温度150℃、成形圧力970kgf/cm、硬化時間120s、射出速度2.0cm/sの条件で測定した最低溶融粘度が300dPa・s以下であり、指標粘度800dPa・sから最低溶融粘度を引いた値bと、最低溶融粘度を経て硬化過程で再び800dPa・sに到達するまでの時間aとの比b/aが20以上である光半導体封止用樹脂成形物に関する。 The present invention also relates to a resin molded product for encapsulating optical semiconductors, which has a minimum melt viscosity of 300 dPa·s or less, measured in accordance with EMMI (Epoxy Molding Materials Institute) standard 1-66 under conditions of a mold temperature of 150°C, a molding pressure of 970 kgf/ cm2 , a curing time of 120 s, and an injection speed of 2.0 cm/s, and has a ratio b/a of 20 or more, where b is the value obtained by subtracting the minimum melt viscosity from the index viscosity of 800 dPa·s, and a is the time a required for the melt viscosity to reach 800 dPa·s again during the curing process after passing through the minimum melt viscosity.

前記光半導体封止用樹脂タブレットは、熱硬化性樹脂と硬化剤の反応物、および、硬化促進剤を含むことが好ましい。 The resin tablet for sealing optical semiconductors preferably contains a reaction product of a thermosetting resin and a curing agent, and a curing accelerator.

また、本発明は、前記光半導体封止用樹脂成形物を成形して得られる光半導体封止材、および、
光半導体素子と、当該光半導体素子を封止する該光半導体封止材とを備える光半導体装置に関する。
The present invention also relates to an optical semiconductor encapsulant obtained by molding the optical semiconductor encapsulating resin molded product, and
The present invention relates to an optical semiconductor device including an optical semiconductor element and the optical semiconductor encapsulant that encapsulates the optical semiconductor element.

さらに、本発明は、熱硬化性樹脂、硬化剤および硬化促進を混練し、硬化性樹脂組成物を得る工程と、該硬化性樹脂組成物を熱処理する工程と、該硬化性樹脂組成物を造粒し、粒状硬化性樹脂組成物を得る工程と、該粒状硬化性樹脂組成物を成形する工程とを備えたことを特徴とする前記光半導体封止用樹脂成形物の製法に関する。 Furthermore, the present invention relates to a method for producing the resin molded product for sealing optical semiconductors, which comprises the steps of kneading a thermosetting resin, a curing agent, and a curing accelerator to obtain a curable resin composition, heat-treating the curable resin composition, granulating the curable resin composition to obtain a granular curable resin composition, and molding the granular curable resin composition.

本発明の光半導体封止用樹脂成形物は、成形物に含まれる樹脂の分子量分布が狭く、光半導体生産時に最低溶融粘度の到達後、硬化するまでの時間が短いため、光半導体生産における生産マージンが広く、安定してトランスファー成形することができる。 The resin molded product for sealing optical semiconductors of the present invention contains a resin with a narrow molecular weight distribution, and the time it takes to harden after reaching the minimum melt viscosity during optical semiconductor production is short, so the production margin in optical semiconductor production is wide and stable transfer molding can be performed.

本発明の光半導体封止用樹脂成形物は、重量平均分子量Mwと数平均分子量Mnの比である分子量分布Mw/Mnが2.7以下である樹脂を含むことを特徴とする。光半導体封止用樹脂成形物としては、タブレット、シート等が挙げられ、光半導体装置を構成する光半導体素子を覆うように形成され、当該素子を封止する部材である。 The resin molded product for sealing optical semiconductors of the present invention is characterized by containing a resin having a molecular weight distribution Mw/Mn, which is the ratio of weight average molecular weight Mw to number average molecular weight Mn, of 2.7 or less. Examples of the resin molded product for sealing optical semiconductors include tablets and sheets, and are members that are formed to cover the optical semiconductor element that constitutes the optical semiconductor device and seal the element.

分子量分布は、成形物に含まれる樹脂成分を有機溶媒に溶解させ、ゲルパーミエーションクロマトグラフィー(GPC)法により測定した重量平均分子量Mwと数平均分子量Mnから計算することができる。分子量分布Mw/Mnは2.7以下であるが、2.3以下が好ましく、2.0以下がより好ましい。2.7を超えると、安定してトランスファー成形できなくなることがある。 The molecular weight distribution can be calculated from the weight average molecular weight Mw and number average molecular weight Mn measured by dissolving the resin components contained in the molded product in an organic solvent and using gel permeation chromatography (GPC). The molecular weight distribution Mw/Mn is 2.7 or less, preferably 2.3 or less, and more preferably 2.0 or less. If it exceeds 2.7, stable transfer molding may not be possible.

重量平均分子量Mwは、3000~7000が好ましい。また、数平均分子量Mnは、1500~2600が好ましい。Mwが3000未満、または、Mnが1500未満では、成形時に樹脂の流動性が高すぎ、製品外へ漏れ出してバリが生じ、外観を損なう傾向があり、Mwが7000を超え、または、Mnが2600を超えると、成形時に樹脂の流動性が低く、製品の充填不良となる傾向がある。 The weight average molecular weight Mw is preferably 3000 to 7000. The number average molecular weight Mn is preferably 1500 to 2600. If Mw is less than 3000 or Mn is less than 1500, the resin will have too high fluidity during molding, and will tend to leak out of the product, causing burrs and impairing the appearance. If Mw exceeds 7000 or Mn exceeds 2600, the resin will have low fluidity during molding, and will tend to result in poor filling of the product.

光半導体封止用樹脂成形体がタブレットの場合、その体積は、特に限定されないが、1~100cmが好ましく、10~100cmがより好ましい。体積が小さすぎると、反応状態のばらつきの違いが見えにくくなる傾向がある。 When the optical semiconductor encapsulating resin molded article is a tablet, its volume is not particularly limited, but is preferably 1 to 100 cm3, and more preferably 10 to 100 cm3 . If the volume is too small, it tends to be difficult to see the difference in the variation in the reaction state.

また、本発明の光半導体封止用樹脂成形物は、EMMI(Epoxy Molding Materials Institute)規格1-66に準じ、金型温度150℃、成形圧力970kgf/cm、硬化時間120s、射出速度2.0cm/sの条件で測定した最低溶融粘度が300dPa・s以下であり、指標粘度800dPa・sから最低溶融粘度を引いた値bと、最低溶融粘度を経て硬化過程で再び800dPa・sに到達するまでの時間aとの比b/aが20以上であることを特徴とする。 The resin molded product for encapsulating optical semiconductors of the present invention is characterized in that it has a minimum melt viscosity of 300 dPa·s or less, measured in accordance with EMMI (Epoxy Molding Materials Institute) standard 1-66 under conditions of a mold temperature of 150°C, a molding pressure of 970 kgf/ cm2 , a curing time of 120 s, and an injection speed of 2.0 cm/s, and that the ratio b/a of the value b obtained by subtracting the minimum melt viscosity from the index viscosity of 800 dPa·s to the time a required for the melt viscosity to reach 800 dPa·s again during the curing process after the minimum melt viscosity is 20 or more.

最低溶融粘度は、300dPa・s以下であるが、200dPa・s以下が好ましい。300dPa・sを超えると、成形時の製品への充填不良となる傾向がある。下限は特に限定されないが、30dPa・s以上が好ましく、50dPa・s以上がより好ましく、80dPa・s以上がさらに好ましい。 The minimum melt viscosity is 300 dPa·s or less, preferably 200 dPa·s or less. If it exceeds 300 dPa·s, there is a tendency for poor filling into the product during molding. There is no particular lower limit, but 30 dPa·s or more is preferred, 50 dPa·s or more is more preferred, and 80 dPa·s or more is even more preferred.

指標粘度800dPa・sから最低溶融粘度を引いた値bは、特に限定されないが、500~770が好ましく、500~750がより好ましく、500~720がさらに好ましい。また、指標粘度800dPa・sから最低溶融粘度を引いた値bと、最低溶融粘度を経て硬化過程で再び800dPa・sに到達するまでの時間aは、特に限定されないが、5~32が好ましく、10~30がより好ましい。 The value b obtained by subtracting the minimum melt viscosity from the index viscosity of 800 dPa·s is not particularly limited, but is preferably 500 to 770, more preferably 500 to 750, and even more preferably 500 to 720. In addition, the value b obtained by subtracting the minimum melt viscosity from the index viscosity of 800 dPa·s and the time a required for the viscosity to reach 800 dPa·s again during the curing process after passing the minimum melt viscosity are not particularly limited, but are preferably 5 to 32, and more preferably 10 to 30.

最低溶融粘度を経て硬化過程で再び800dPa・sに到達するまでの時間aとの比b/aは20以上であるが、22以上が好ましく、25以上がより好ましい。20未満では、硬化するまでの時間がかかることになり、成形サイクルが長くなり、ハイサイクルが達成できなくなる。 The ratio b/a of the time it takes for the melt viscosity to reach 800 dPa·s again during the curing process after passing the minimum melt viscosity is 20 or more, preferably 22 or more, and more preferably 25 or more. If it is less than 20, it will take too long to cure, the molding cycle will be long, and a high cycle will not be achieved.

ここで、溶融粘度の測定に用いる測定装置は、試料が充填されるバレル、スパイラル形状のキャビティーを有する金型、試料を押し込む金型からなる。装置全体を測定温度に加熱し、バレルに樹脂組成物を投入して一定時間経過後にプランジャーを押し込んでプレスする。この装置により、溶融粘度等を測定することができる。該測定装置は、EMMI(Epoxy Molding Materials Institute)規格1-66に準ずるものである。 The measuring device used to measure melt viscosity here consists of a barrel in which the sample is filled, a mold with a spiral-shaped cavity, and a mold into which the sample is pressed. The entire device is heated to the measurement temperature, and the resin composition is poured into the barrel. After a certain period of time has passed, the plunger is pressed in to press. This device can be used to measure melt viscosity, etc. The measuring device conforms to EMMI (Epoxy Molding Materials Institute) standard 1-66.

分子量分布Mw/Mn、最低溶融粘度、指標粘度800dPa・sから最低溶融粘度を引いた値bと、最低溶融粘度を経て硬化過程で再び800dPa・sに到達するまでの時間aとの比b/aは、硬化成分と硬化剤の混錬時の反応を制御することにより調整することができる。反応の制御は、例えば、熱硬化性樹脂の種類と量、硬化剤の種類と量、硬化促進剤の種類と量、反応温度、反応時間、樹脂形状などを適宜調整することにより行うことができる。 The ratio b/a of the molecular weight distribution Mw/Mn, the minimum melt viscosity, the value b obtained by subtracting the minimum melt viscosity from the index viscosity of 800 dPa·s, and the time a required for the viscosity to reach 800 dPa·s again during the curing process after passing through the minimum melt viscosity can be adjusted by controlling the reaction during kneading of the curing components and the curing agent. The reaction can be controlled, for example, by appropriately adjusting the type and amount of the thermosetting resin, the type and amount of the curing agent, the type and amount of the curing accelerator, the reaction temperature, the reaction time, the resin shape, etc.

本発明の光半導体封止用樹脂成形物は、熱硬化性樹脂、硬化剤、硬化促進剤以外に、熱硬化性樹脂と硬化剤の反応物を含有することが好ましい。なお、シリカ粉末等の充填剤は光の透過を損なわない程度であれば配合することができる。 The resin molded product for sealing optical semiconductors of the present invention preferably contains a reaction product of a thermosetting resin and a curing agent in addition to a thermosetting resin, a curing agent, and a curing accelerator. Fillers such as silica powder can be added to the extent that they do not impair light transmission.

熱硬化性樹脂としては、エポキシ樹脂、シリコーン樹脂、エポキシ樹脂/シリコーン樹脂のハイブリッド樹脂などが挙げられる。なかでもエポキシ樹脂が好ましい。 Thermosetting resins include epoxy resins, silicone resins, and hybrid resins of epoxy resins/silicone resins. Of these, epoxy resins are preferred.

エポキシ樹脂としては、着色の少ないものが好ましく、例えば、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、脂環式エポキシ樹脂、トリグリシジルイソシアネート,ヒダントインエポキシ等の含複素環エポキシ樹脂、水添加ビスフェノールA型エポキシ樹脂、脂肪族系エポキシ樹脂、グリシジルエーテル型エポキシ樹脂等があげられる。これらは、単独でもしくは2種以上を併せて用いることができる。 As the epoxy resin, one with little coloring is preferred, and examples thereof include bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenol novolac type epoxy resin, alicyclic epoxy resin, heterocyclic epoxy resin such as triglycidyl isocyanate and hydantoin epoxy, water-added bisphenol A type epoxy resin, aliphatic epoxy resin, glycidyl ether type epoxy resin, etc. These can be used alone or in combination of two or more kinds.

硬化剤としては、硬化時または硬化後に樹脂組成物の硬化体に着色の少ない酸無水物が好適である。例えば、無水フタル酸、無水マレイン酸、無水トリメリット酸、無水ピロメリット酸、ヘキサヒドロ無水フタル酸、テトラヒドロ無水フタル酸、無水メチルナジック酸、無水ナジック酸、無水グルタル酸等があげられる。また、他の硬化剤としては、アミン系硬化剤であるメタフェニレンジアミン、ジメチルジフェニルメタン、ジアミノジフェニルスルホン、m-キシレンジアミン、テトラエチレンペンタミン、ジエチルアミン、プロピルアミン等や、フェノール樹脂系硬化剤等があげられる。これらも、単独で用いても2種以上を併用してもよい。 As a curing agent, an acid anhydride that causes little coloring in the cured product of the resin composition during or after curing is suitable. Examples include phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methylnadic anhydride, nadic anhydride, and glutaric anhydride. Other curing agents include amine-based curing agents such as metaphenylenediamine, dimethyldiphenylmethane, diaminodiphenylsulfone, m-xylylenediamine, tetraethylenepentamine, diethylamine, and propylamine, as well as phenolic resin-based curing agents. These may be used alone or in combination of two or more.

硬化剤の配合量は、特に限定されないが、エポキシ樹脂100質量部に対して20~80質量部が好ましく、40~60質量部がより好ましい。20質量部未満では、硬化の速度が遅くなり、80質量部を超えると硬化反応に対して過剰量が存在するため、諸物性の低下を引き起こす恐れがある。 The amount of hardener to be used is not particularly limited, but is preferably 20 to 80 parts by weight, more preferably 40 to 60 parts by weight, per 100 parts by weight of epoxy resin. If the amount is less than 20 parts by weight, the hardening speed will be slow, and if the amount is more than 80 parts by weight, there is an excess amount for the hardening reaction, which may cause a deterioration in various physical properties.

硬化促進剤としては、トリエタノールアミン等の三級アミンや、2-メチルイミダゾール等のイミダゾール類、テトラフェニルホスホニウム・テトラフェニルボーレートや、トリフェニルホスフィン等の有機リン化合物、1,8-ジアザビシクロ〔5,4,0〕ウンデセン-7や1,5-ジアザビシクロ〔4,3,0〕ノネン-5等のジアザビシクロアルケン系化合物等があげられる。これらも、単独で用いても2種以上を併用してもよい。 Examples of the curing accelerator include tertiary amines such as triethanolamine, imidazoles such as 2-methylimidazole, organic phosphorus compounds such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine, and diazabicycloalkene compounds such as 1,8-diazabicyclo[5,4,0]undecene-7 and 1,5-diazabicyclo[4,3,0]nonene-5. These may be used alone or in combination of two or more.

硬化促進剤の配合量は、特に限定されないが、エポキシ樹脂100質量部に対して例えば0.1~5質量部の範囲から適宜選択でき、0.5~3質量部が好ましく、1~2質量部がより好ましい。硬化促進剤の配合量が少なすぎると、硬化の速度が遅くなり、生産性が低下し、一方、硬化促進剤の配合量が多すぎると硬化反応の速度が速く、反応状態の制御が困難となり、反応のばらつきを生じさせる恐れがある The amount of the curing accelerator is not particularly limited, but can be appropriately selected from the range of, for example, 0.1 to 5 parts by mass per 100 parts by mass of epoxy resin, with 0.5 to 3 parts by mass being preferred, and 1 to 2 parts by mass being more preferred. If the amount of the curing accelerator is too small, the curing speed will be slow and productivity will decrease, while if the amount of the curing accelerator is too large, the curing reaction will be too fast, making it difficult to control the reaction state and causing reaction variation.

本発明の光半導体封止用樹脂組成物には、上記各成分以外に必要に応じて着色防止剤、滑沢剤、変性剤、劣化防止剤、離型剤等の添加剤が用いられる。 In addition to the above-mentioned components, additives such as color inhibitors, lubricants, modifiers, deterioration inhibitors, and mold release agents may be used as necessary in the optical semiconductor encapsulation resin composition of the present invention.

着色防止剤としては、フェノール系化合物、アミン系化合物、有機硫黄系化合物、ホスフィン系化合物等があげられる。 Examples of color inhibitors include phenolic compounds, amine compounds, organic sulfur compounds, and phosphine compounds.

滑沢剤としては、ステアリン酸、ステアリン酸マグネシウム、ステアリン酸カルシウム等のワックスやタルク等があげられる。なお、上記滑沢剤を配合する場合、その配合量は、打錠成形条件に応じて適宜設定されるが、例えば、樹脂組成物全体の0.1~0.4質量%に設定することが好適である。 Lubricants include waxes such as stearic acid, magnesium stearate, and calcium stearate, as well as talc. When the above lubricants are added, the amount of the lubricants added is appropriately set according to the tableting conditions, but it is preferable to set the amount to 0.1 to 0.4% by mass of the entire resin composition.

本発明の光半導体封止用樹脂成形物の製造方法は、熱硬化性樹脂、硬化剤および硬化促進を混練し、硬化性樹脂組成物を得る工程と、
該硬化性樹脂組成物を熱処理する工程と、
該硬化性樹脂組成物を造粒し、粒状硬化性樹脂組成物を得る工程と、
該粒状硬化性樹脂組成物を成形する工程
とを含むことを特徴とする。
The method for producing a resin molded article for encapsulating an optical semiconductor of the present invention includes the steps of kneading a thermosetting resin, a curing agent, and a curing accelerator to obtain a curable resin composition;
heat-treating the curable resin composition;
granulating the curable resin composition to obtain a granular curable resin composition;
and a step of molding the granular curable resin composition.

混練する方法は特に限定されないが、たとえば押出機を用いる方法などが挙げられる。混練温度も特に限定されず、熱硬化性樹脂の特性によって適宜変更することができ、混練時に反応を進行させるように温度を高く設定することも可能である。具体的には、80~150℃が好ましく、110~130℃がより好ましい。 The kneading method is not particularly limited, but examples include a method using an extruder. The kneading temperature is also not particularly limited and can be changed appropriately depending on the characteristics of the thermosetting resin. It is also possible to set the temperature high so as to promote the reaction during kneading. Specifically, 80 to 150°C is preferable, and 110 to 130°C is more preferable.

混練して得られた硬化性樹脂組成物の形状は特に限定されず、フィルム状、シート状、粒状、塊状などが挙げられる。 The shape of the curable resin composition obtained by kneading is not particularly limited, and examples include film, sheet, granules, and lumps.

混練して得られた硬化性樹脂組成物の厚さは特に限定されないが、1~30mmが好ましく、2~20mmがより好ましい。1mm未満では、厚さが薄く、吸湿の影響を受けやすく、30mmを超えると、冷却までに時間を要し、内部蓄熱から反応がばらつく傾向がある。 The thickness of the curable resin composition obtained by kneading is not particularly limited, but is preferably 1 to 30 mm, and more preferably 2 to 20 mm. If the thickness is less than 1 mm, the composition is thin and susceptible to moisture absorption, and if the thickness exceeds 30 mm, it takes time to cool and the reaction tends to vary due to internal heat accumulation.

混練して得られた硬化性樹脂組成物は、熱処理してBステージ状(半硬化状)の光半導体封止用樹脂組成物を得る。熱処理温度は特に限定されないが、25~100℃が好ましく、60~80℃がより好ましい。25℃未満では、硬化反応が遅く、生産性が低下する傾向があり、100℃を超えると、硬化反応が速く、所定の反応状態で終了させることが困難となる傾向がある。熱処理時間は特に限定されず、熱硬化性樹脂の特性によって適宜変更することができる。 The curable resin composition obtained by kneading is heat-treated to obtain a B-stage (semi-cured) resin composition for sealing optical semiconductors. The heat treatment temperature is not particularly limited, but is preferably 25 to 100°C, and more preferably 60 to 80°C. If the temperature is less than 25°C, the curing reaction tends to be slow and productivity tends to decrease, and if the temperature exceeds 100°C, the curing reaction tends to be fast and it tends to be difficult to terminate the reaction at the specified reaction state. The heat treatment time is not particularly limited, and can be changed as appropriate depending on the characteristics of the thermosetting resin.

熱処理した樹脂組成物は、造粒して、粒状樹脂組成物を得る。造粒前に、ボールミル、ターボミル等を用いて粉砕することもできる。造粒方法は特に限定されないが、乾式圧縮造粒機を用いる方法等が挙げられる。造粒して得られた粒状物の平均粒径は特に限定されないが、1~5000μmが好ましく、100~2000μmがより好ましい。5000μmを超えると、圧縮率が低下する傾向がある。 The heat-treated resin composition is granulated to obtain a granular resin composition. Before granulation, the resin composition can be pulverized using a ball mill, turbo mill, or the like. The granulation method is not particularly limited, but examples include a method using a dry compression granulator. The average particle size of the granules obtained by granulation is not particularly limited, but is preferably 1 to 5000 μm, and more preferably 100 to 2000 μm. If it exceeds 5000 μm, the compression ratio tends to decrease.

得られた粒状樹脂組成物は、成形して成形物を得る。成形物としてはタブレットやシートが挙げられ、成形方法としてはタブレットを得る打錠成形や、シートを得る押出成形などが挙げられる。得られた成形物は、欠けや割れ、重量バラツキだけでなく、前述したように、分子量分布Mw/Mn、最低溶融粘度が小さく、指標粘度800dPa・sから最低溶融粘度を引いた値bと、最低溶融粘度を経て硬化過程で再び800dPa・sに到達するまでの時間aとの比b/aが20以上と大きいため、安定してトランスファー成形可能な高品質の成形物となる。 The obtained granular resin composition is molded to obtain a molded product. Examples of molded products include tablets and sheets, and molding methods include tableting to obtain tablets and extrusion to obtain sheets. The obtained molded products are not only free of chipping, cracking, and weight variations, but also, as mentioned above, have a small molecular weight distribution Mw/Mn and minimum melt viscosity, and the ratio b/a of the value b obtained by subtracting the minimum melt viscosity from the index viscosity of 800 dPa·s to the time a until the melt viscosity reaches 800 dPa·s again during the curing process after the minimum melt viscosity is large at 20 or more, resulting in a high-quality molded product that can be stably transferred molded.

成形物がタブレットの場合、タブレットを打錠成形する際の条件は、粒状硬化性樹脂組成物の組成や平均粒径、粒度分布等に応じて適宜調整されるが、一般に、その打錠成形時の圧縮率は、90~96%に設定することが好適である。すなわち、圧縮率の値が90%より小さいと、タブレットの密度が低くなって割れやすくなるおそれがあり、逆に、圧縮率の値が96%より大きいと、打錠時にクラックが発生して離型時に欠けや折れが生じるおそれがあるからである。 When the molded product is a tablet, the conditions for tablet compression are adjusted as appropriate depending on the composition, average particle size, particle size distribution, etc. of the granular curable resin composition, but in general, it is preferable to set the compression ratio during tablet compression to 90-96%. That is, if the compression ratio value is less than 90%, the density of the tablet may be low and it may be prone to cracking, and conversely, if the compression ratio value is more than 96%, cracks may occur during tablet compression, causing chipping or breakage when released from the mold.

前記成形物は、トランスファーモールド成形により光半導体素子を封止して、光半導体装置を作製する。成形物に含まれる樹脂の分子量分布が狭く、光半導体生産時に最低溶融粘度の到達後、硬化するまでの時間が短いため、光学ムラ等がなく、信頼性の高い、高品質の光半導体素子となる。したがって、この光半導体装置を作動させて画像を得た場合には、光学ムラによる縞模様が生じることがなく、鮮明な画像が得られるという利点を有する。 The molded product is used to encapsulate the optical semiconductor element by transfer molding to produce an optical semiconductor device. The molecular weight distribution of the resin contained in the molded product is narrow, and the time it takes to harden after reaching the minimum melt viscosity during optical semiconductor production is short, resulting in a highly reliable, high-quality optical semiconductor element without optical unevenness. Therefore, when this optical semiconductor device is operated to obtain an image, there is no striped pattern caused by optical unevenness, and it has the advantage of providing a clear image.

また、本発明の光半導体封止用樹脂成形物は、受光素子等の光半導体素子の樹脂封止に用いられるため、光学的観点から透明のものが好ましい。この場合の「透明」とは、上記タブレットを構成する硬化性樹脂組成物の硬化物が400nmにおける透過率が98%以上のものをいう。 In addition, since the resin molded product for sealing optical semiconductors of the present invention is used for resin sealing of optical semiconductor elements such as light receiving elements, it is preferable that it is transparent from an optical viewpoint. In this case, "transparent" means that the cured product of the curable resin composition constituting the tablet has a transmittance of 98% or more at 400 nm.

つぎに、実施例について比較例と併せて説明する。ただし、本発明は、以下の実施例に限定されるものではない。 Next, examples will be described together with comparative examples. However, the present invention is not limited to the following examples.

使用した材料を以下に示す。
エポキシ樹脂1:ビスフェノール型エポキシ樹脂A(エポキシ当量650)
エポキシ樹脂2:トリグリシジルイソシアヌレート(エポキシ当量100)
硬化剤 :テトラヒドロ無水フタル酸(酸無水当量152)
硬化促進剤 :2-エチル-4-メチルイミダゾール
The materials used are shown below.
Epoxy resin 1: Bisphenol type epoxy resin A (epoxy equivalent 650)
Epoxy resin 2: Triglycidyl isocyanurate (epoxy equivalent: 100)
Hardener: Tetrahydrophthalic anhydride (acid anhydride equivalent: 152)
Curing accelerator: 2-ethyl-4-methylimidazole

実施例1~3および比較例1
各原料を表1に示す配合量で、表1に記載した温度に設定した押出機で加熱溶解し混合した後、押出機の吐出口から出てきた樹脂を2~10mm厚で成形し、60℃で60分間熱処理した。押出機中での滞留時間は約2分であった。得られたエポキシ樹脂組成物を、ロールグラニュレータ(日本グラニュレーター社製、テスト機:1531型)にて、造粒と整粒を行うことにより、光半導体封止用エポキシ樹脂組成物を得た。得られた光半導体封止用樹脂組成物を、20号ロータリー打錠機を用いて打錠成形することにより、表1に示す光半導体封止用樹脂タブレットを作製した。圧縮率は、90~93%であった。
Examples 1 to 3 and Comparative Example 1
The raw materials were mixed in the amounts shown in Table 1 by heating and dissolving them in an extruder set at the temperature shown in Table 1, and the resin coming out of the extruder outlet was molded into a thickness of 2 to 10 mm and heat-treated at 60°C for 60 minutes. The residence time in the extruder was about 2 minutes. The obtained epoxy resin composition was granulated and sized using a roll granulator (manufactured by Nippon Granulator Co., Ltd., test machine: Model 1531) to obtain an epoxy resin composition for sealing optical semiconductors. The obtained resin composition for sealing optical semiconductors was tableted using a No. 20 rotary tablet press to produce resin tablets for sealing optical semiconductors shown in Table 1. The compression ratio was 90 to 93%.

各実施例で作製したタブレットを用いて、分子量と粘度特性を、以下に示す方法で評価した。評価結果を表1に示す。 The tablets prepared in each example were used to evaluate the molecular weight and viscosity characteristics using the methods described below. The evaluation results are shown in Table 1.

<分子量>
得られたタブレットの一部をテトラヒドロフランに溶解させ、GPC装置(東ソー社製、HLC-8320GPC)を用いて以下の条件で測定し、ポリスチレン換算により数平均分子量Mn、重量平均分子量Mw求めた。
カラム:TSKgel Super HZMH/HZ4000/HZ3000/HZ2000
カラムサイズ:6.0mmI.D.×150mm
溶離液:THF
流量:0.6mL/min
検出器:RI
カラム温度:40℃
注入量:20μL
<Molecular weight>
A part of the obtained tablet was dissolved in tetrahydrofuran and measured under the following conditions using a GPC apparatus (HLC-8320GPC, manufactured by Tosoh Corporation) to determine the number average molecular weight Mn and weight average molecular weight Mw in terms of polystyrene.
Column: TSKgel Super HZMH/HZ4000/HZ3000/HZ2000
Column size: 6.0 mm I.D. x 150 mm
Eluent: THF
Flow rate: 0.6 mL/min
Detector: RI
Column temperature: 40°C
Injection volume: 20 μL

<粘度特性>
EMMI(Epoxy Molding Materials Institute)規格1-66に準じ、金型温度150℃、成形圧力970kgf/cm、硬化時間120s、射出速度2.0cm/sの条件で測定した。具体的には、流動性測定装置を用い、得られたタブレットを粗粉砕して開口径5mmのふるいを通ったパウダーを、150℃に維持したポッドに投入し、プランジャーを一定速度で押し込んでプレスした。測定したトルクから算出した溶融粘度を、時間に対してプロットし、指標粘度800dPa・sから最低溶融粘度を引いた値bと、最低溶融粘度を経て硬化過程で再び800dPa・sに到達するまでの時間aを求めた。
<Viscosity characteristics>
The measurement was performed according to EMMI (Epoxy Molding Materials Institute) standard 1-66, under the conditions of a mold temperature of 150°C, molding pressure of 970 kgf/cm 2 , curing time of 120 s, and injection speed of 2.0 cm/s. Specifically, using a flowability measuring device, the obtained tablet was coarsely crushed and the powder passed through a sieve with an opening diameter of 5 mm was placed in a pod maintained at 150°C, and pressed by pushing the plunger at a constant speed. The melt viscosity calculated from the measured torque was plotted against time, and the value b obtained by subtracting the minimum melt viscosity from the index viscosity of 800 dPa·s and the time a until the minimum melt viscosity was reached again in the curing process were obtained.

Figure 0007465703000001
Figure 0007465703000001

表1に示す実験結果から、実施例1~3の成形体では、樹脂の分子量分布Mw/Mnが小さく、最低溶融粘度が300dPa・s以下であり、指標粘度800dPa・sから最低溶融粘度を引いた値bと、最低溶融粘度を経て硬化過程で再び800dPa・sに到達するまでの時間aとの比b/aが20以上のタブレットが得られた。よって、光半導体生産における生産マージンが広く、安定してトランスファー成形が可能である。
一方、比較例1では、樹脂の分子量分布Mw/Mnが2.9もあり、b/aが18.8と小さいタブレットしか得られなかった。よって、光半導体生産における生産マージンが狭く、安定してトランスファー成形することが難しい。
From the experimental results shown in Table 1, the molded bodies of Examples 1 to 3 had small resin molecular weight distributions Mw/Mn, minimum melt viscosities of 300 dPa·s or less, and tablets were obtained in which the ratio b/a (value b obtained by subtracting the minimum melt viscosity from the index viscosity of 800 dPa·s, to the time a required for the viscosity to reach 800 dPa·s again during the curing process after the minimum melt viscosity) was 20 or more. Therefore, the production margin in optical semiconductor production is wide, and stable transfer molding is possible.
On the other hand, in Comparative Example 1, the molecular weight distribution Mw/Mn of the resin was as high as 2.9, and only tablets with a small b/a of 18.8 were obtained. Therefore, the production margin in the production of optical semiconductors is narrow, and it is difficult to perform stable transfer molding.

本発明は、光半導体素子の封止に用いられる光半導体封止用樹脂成形物と、その製造方法に関し、光半導体装置の製造に利用することができる。
The present invention relates to an optical semiconductor encapsulation resin molded product used for encapsulating an optical semiconductor element, and a manufacturing method thereof, and can be used in the manufacture of an optical semiconductor device.

Claims (5)

EMMI(Epoxy Molding Materials Institute)規格1-66に準じ、金型温度150℃、成形圧力970kgf/cm、硬化時間120s、射出速度2.0cm/sの条件で測定した最低溶融粘度が300dPa・s以下であり、
指標粘度800dPa・sから最低溶融粘度を引いた値bと、最低溶融粘度を経て硬化過程で再び800dPa・sに到達するまでの時間aとの比b/aが20以上である光半導体封止用樹脂成形物。
The minimum melt viscosity, measured according to EMMI (Epoxy Molding Materials Institute) standard 1-66 under conditions of a mold temperature of 150°C, a molding pressure of 970 kgf/cm 2 , a curing time of 120 seconds, and an injection speed of 2.0 cm/s, is 300 dPa·s or less;
A resin molded product for sealing optical semiconductors, in which the ratio b/a of the value b obtained by subtracting the minimum melt viscosity from the index viscosity of 800 dPa·s to the time a required for the melt viscosity to reach 800 dPa·s again during the curing process after passing through the minimum melt viscosity is 20 or more.
熱硬化性樹脂と硬化剤の反応物、および、硬化促進剤を含む請求項1載の光半導体封止用樹脂成形物。 2. The resin molding for sealing an optical semiconductor according to claim 1, further comprising a reaction product of a thermosetting resin and a curing agent, and a curing accelerator. 請求項1または2に記載の光半導体封止用樹脂成形物を成形して得られる光半導体封止材。 3. An optical semiconductor encapsulant obtained by molding the optical semiconductor encapsulating resin molded product according to claim 1 or 2 . 光半導体素子と、当該光半導体素子を封止する請求項に記載の光半導体封止材とを備える光半導体装置。 An optical semiconductor device comprising: an optical semiconductor element; and the optical semiconductor encapsulant according to claim 3 for encapsulating the optical semiconductor element. 熱硬化性樹脂、硬化剤および硬化促進を混練し、硬化性樹脂組成物を得る工程と、
該硬化性樹脂組成物を熱処理する工程と、
該硬化性樹脂組成物を造粒し、粒状硬化性樹脂組成物を得る工程と、
該粒状硬化性樹脂組成物を成形する工程
とを含むことを特徴とする請求項1または2に記載の光半導体封止用樹脂成形物の製造方法。
A step of kneading a thermosetting resin, a curing agent, and a curing accelerator to obtain a curable resin composition;
heat-treating the curable resin composition;
granulating the curable resin composition to obtain a granular curable resin composition;
3. The method for producing a molded resin product for encapsulating an optical semiconductor according to claim 1, further comprising the step of molding the granular curable resin composition.
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010285563A (en) 2009-06-12 2010-12-24 Shin-Etsu Chemical Co Ltd Resin composition for optical semiconductor element sealing
JP2011009394A (en) 2009-06-25 2011-01-13 Nitto Denko Corp Method of manufacturing resin tablet for sealing optical semiconductor, resin tablet for sealing optical semiconductor provided by the same, and optical semiconductor device using the same
JP2012019098A (en) 2010-07-08 2012-01-26 Fuji Electric Co Ltd Method of manufacturing semiconductor device
WO2012020730A1 (en) 2010-08-11 2012-02-16 昭和電工株式会社 Epoxy silicone condensate, curable composition comprising epoxy silicone condensate, and cured product thereof
JP2013145839A (en) 2012-01-16 2013-07-25 Nitto Denko Corp Hollow sealing resin sheet, manufacturing method of hollow sealing resin sheet, manufacturing method of hollow type electronic component apparatus, and hollow type electronic component apparatus
JP2014040544A (en) 2012-08-23 2014-03-06 Asahi Kasei E-Materials Corp Liquid sealing epoxy resin composition, cured product, and electronic component

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2656350B2 (en) * 1989-05-30 1997-09-24 日東電工株式会社 Optical semiconductor device, method for producing the same, and resin composition for encapsulating optical semiconductor used therein
JPH03293737A (en) * 1990-04-11 1991-12-25 Hitachi Chem Co Ltd Manufacture of resin-sealed semiconductor device
JP2862718B2 (en) * 1991-05-20 1999-03-03 日東電工株式会社 Semiconductor device
JPH06216281A (en) * 1992-11-30 1994-08-05 Nitto Denko Corp Semiconductor device
JPH06244229A (en) * 1992-12-26 1994-09-02 Hitachi Ltd Semiconductor device and package molding method thereof as well as molding device used for the same
JP2009188142A (en) * 2008-02-06 2009-08-20 Kyocera Chemical Corp Epoxy resin tablet for semiconductor sealing, and manufacturing method thereof
JP2015109337A (en) * 2013-12-04 2015-06-11 日東電工株式会社 Thermosetting resin composition for optical semiconductor device, lead frame for optical semiconductor device obtained using the same, and optical semiconductor device
JP6880567B2 (en) * 2016-04-26 2021-06-02 住友ベークライト株式会社 Manufacturing method of epoxy resin composition for semiconductor encapsulation and semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010285563A (en) 2009-06-12 2010-12-24 Shin-Etsu Chemical Co Ltd Resin composition for optical semiconductor element sealing
JP2011009394A (en) 2009-06-25 2011-01-13 Nitto Denko Corp Method of manufacturing resin tablet for sealing optical semiconductor, resin tablet for sealing optical semiconductor provided by the same, and optical semiconductor device using the same
JP2012019098A (en) 2010-07-08 2012-01-26 Fuji Electric Co Ltd Method of manufacturing semiconductor device
WO2012020730A1 (en) 2010-08-11 2012-02-16 昭和電工株式会社 Epoxy silicone condensate, curable composition comprising epoxy silicone condensate, and cured product thereof
JP2013145839A (en) 2012-01-16 2013-07-25 Nitto Denko Corp Hollow sealing resin sheet, manufacturing method of hollow sealing resin sheet, manufacturing method of hollow type electronic component apparatus, and hollow type electronic component apparatus
JP2014040544A (en) 2012-08-23 2014-03-06 Asahi Kasei E-Materials Corp Liquid sealing epoxy resin composition, cured product, and electronic component

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