JP7476589B2 - Method for manufacturing semiconductor device - Google Patents

Description

The present invention relates to a semiconductor device and a manufacturing method thereof.

Technology related to resin materials used in LASER DIRECT STRUCTURE (LDS) is described in Patent Document 1 (JP Patent Publication 2015-134903 A). This document describes a fiber-reinforced resin material made by impregnating continuous fibers with a thermoplastic resin composition containing an LDS additive, and uses a polyamide resin as the thermoplastic resin.

JP 2015-134903 A

The present inventors have investigated the use of microfabrication by LDS in the manufacture of semiconductor devices such as molded interconnect devices (MIDs).
The present invention provides a technique for manufacturing a semiconductor device having excellent adhesion between a sealing material and an adjacent member.

According to the present invention,
A semiconductor element;
a first sealing material that seals the semiconductor element and a conductor portion provided on the semiconductor element;
a first wiring layer provided on the first sealing material and electrically connected to the conductor portion;
a second sealing material provided on the first sealing material and sealing the first sealing material and the first wiring layer;
a second wiring layer provided on the second sealing material and electrically connected to the first wiring layer;
Including,
The first and second encapsulants each include:
A thermosetting resin;
An inorganic filler;
a non-conductive metal compound which forms a metal nucleus when irradiated with active energy rays;
The present invention provides a semiconductor device comprising a cured product of first and second thermosetting resin compositions for LDS (LASER DIRECT STRUCTURE).

According to the present invention,
preparing a structure having a semiconductor element and a first encapsulant that encapsulates the semiconductor element;
irradiating a specific portion of a surface of the first sealing material with active energy rays;
a step of selectively forming a metal layer in the region of the surface of the first sealing material that has been irradiated with the active energy rays, thereby forming a first wiring layer that is electrically connected to a conductor portion provided on the semiconductor element;
forming a second sealing material on the first sealing material to seal the first sealing material and the first wiring layer;
irradiating a specific portion of a surface of the second sealing material with active energy rays;
forming a second wiring layer electrically connected to the first wiring layer by selectively forming a metal layer in the region of the surface of the second sealing material irradiated with the active energy rays;
Including,
The first and second encapsulants each include:
A thermosetting resin;
An inorganic filler;
a non-conductive metal compound which forms a metal nucleus when irradiated with active energy rays;
The present invention provides a method for manufacturing a semiconductor device, the semiconductor device being configured with a cured product of first and second thermosetting resin compositions for LDS (LASER DIRECT STRUCTURE).

Any combination of these configurations and conversion of the present invention between methods, devices, etc. are also valid aspects of the present invention.
For example, according to the present invention, it is also possible to obtain a thermosetting resin composition for LDS used in the first or second sealing material of the semiconductor device of the present invention, and a cured product thereof.

The present invention makes it possible to obtain a semiconductor device that has excellent adhesion between the sealing material and its adjacent members.

1 is a cross-sectional view showing a configuration example of a semiconductor device according to an embodiment; 5A to 5C are cross-sectional views showing an example of a manufacturing process of the semiconductor device according to the embodiment. 5A to 5C are cross-sectional views showing an example of a manufacturing process of the semiconductor device according to the embodiment.

The following describes an embodiment of the present invention with reference to the drawings. In all drawings, similar components are given the same reference numerals and descriptions are omitted as appropriate. The drawings are schematic and do not necessarily correspond to the actual dimensional ratios. Numerical ranges "A to B" mean "A or more and B or less" unless otherwise specified. The composition may contain each component alone or in combination of two or more types.

(Semiconductor device)
Fig. 1 is a cross-sectional view showing an example of the configuration of a semiconductor device according to the present embodiment. The semiconductor device 100 shown in Fig. 1 includes a semiconductor element 103, a first sealing material (first sealing layer 107) that seals the semiconductor element 103 and a conductor portion 105 provided on the semiconductor element 103, a first wiring layer (first wiring layer 109) that is provided on the first sealing layer 107 and electrically connected to the conductor portion 105, a second sealing material (second sealing layer 111) that is provided on the first sealing layer 107 and seals the first sealing layer 107 and the first wiring layer 109, and a second wiring layer (second wiring layer 113) that is provided on the second sealing layer 111 and electrically connected to the first wiring layer 109.
First sealing layer 107 and second sealing layer 111 are respectively made of cured products of first and second thermosetting resin compositions for LDS (LASER DIRECT STRUCTUREING), each of which contains a thermosetting resin, an inorganic filler, and a non-conductive metal compound that forms a metal nucleus by irradiation with active energy rays. The composition of the thermosetting resin composition for LDS will be described later.

Specific examples of the semiconductor device 100 include molded circuit components and various semiconductor packages.
Specific examples of molded circuit components include those used in portable electronic devices such as mobile phones, sensor parts for automobiles, medical devices, power management parts, and the like.
Specific examples of semiconductor packages include semiconductor packages such as MAP (Mold Array Package), QFP (Quad Flat Package), SOP (Small Outline Package), CSP (Chip Size Package), QFN (Quad Flat Non-leaded Package), SON (Small Outline Non-leaded Package), BGA (Ball Grid Array), LF-BGA (Lead Flame BGA), FCBGA (Flip Chip BGA), MAPBGA (Molded Array Process BGA), eWLB (Embedded Wafer-Level BGA), Fan-In type eWLB, Fan-Out type eWLB, and SIP (System In package).

The semiconductor device 100 is, for example, a three-dimensional molded circuit component (Molded Interconnect Device: MID). The MID has three elements: a three-dimensional shape, the above-mentioned resin molded product, and a three-dimensional circuit. For example, it is a component in which a circuit is formed with a metal film on the surface of a resin molded product with a three-dimensional structure. Specifically, the MID can include a resin molded product with a three-dimensional structure and a three-dimensional circuit formed on the surface of this resin molded product. By using such an MID, it is possible to effectively utilize space and reduce the number of parts and make the device lighter, thinner, shorter, and smaller.

In the semiconductor device 100, the semiconductor element 103 is mounted on the substrate 101. The semiconductor element 103 is electrically connected to the substrate 101 by, for example, wire bonding or flip chip connection.
The semiconductor element 103 may be provided on the substrate 101 in the form of a semiconductor chip or a semiconductor package.
The substrate 101 is, for example, a wiring substrate such as an interposer, or a lead frame.

The conductor portion 105 is provided on the semiconductor element 103, and more specifically, is a conductive member exposed on the surface of the semiconductor element 103. Specific examples of the conductor portion 105 include wiring and electrodes. The conductor portion 105 is electrically connected to the first wiring layer 109 and the second wiring layer 113.

The conductor portion 105 is specifically made of a conductive material, and more specifically, made of a metal material. From the viewpoint of improving connection reliability, the material of the conductor portion 105 preferably contains copper (Cu) as a constituent element, is more preferably copper or a copper alloy, and is even more preferably copper.

The second sealing layer 111 only needs to cover at least a portion of the first sealing layer 107, and in the example of FIG. 1, it covers the entire upper surface of the first sealing layer 107. Alternatively, the second sealing layer 111 may be configured to cover the entire surface of the first sealing layer 107.

From the viewpoint of stably sealing semiconductor element 103, first sealing layer 107 has a thickness of preferably 100 μm or more, more preferably 150 μm or more, and further preferably 200 μm or more.
From the viewpoint of reducing the thickness of the entire device, the thickness of first sealing layer 107 is preferably 600 μm or less, more preferably 500 μm or less, and further preferably 400 μm or less.

From the viewpoint of stably sealing first sealing layer 107, the thickness of second sealing layer 111 may be, for example, approximately the same as that of first sealing layer 107. Moreover, from the viewpoint of improving processing stability by LDS, the thickness of second sealing layer 111 is preferably 10 μm or more, more preferably 30 μm or more, and even more preferably 50 μm or more.
From the viewpoint of reducing the thickness of the entire device, the thickness of second sealing layer 111 is preferably 300 μm or less, more preferably 200 μm or less, and further preferably 150 μm or less.

Next, a description will be given of a method for manufacturing the semiconductor device 100. Figures 2(a) to 2(d), 3(a) and 3(b) are cross-sectional views showing an example of a manufacturing process for the semiconductor device 100.
The method for manufacturing the semiconductor device 100 includes, for example, the following steps 1 to 6.
(Step 1) A step of preparing a structure having a semiconductor element 103 and a first sealing layer 107 that seals the semiconductor element 103; (Step 2) A step of irradiating a specific portion of the surface of the first sealing layer 107 with active energy rays; (Step 3) A step of selectively forming a metal layer in the area (recess 115) on the surface of the first sealing layer 107 that has been irradiated with active energy rays to form a first wiring layer 109 that is electrically connected to the conductor portion 105 provided on the semiconductor element 103; (Step 4) A step of forming a second sealing layer 111 on the first sealing layer 107 that seals the first sealing layer 107 and the first wiring layer 109; (Step 5) A step of irradiating a specific portion of the surface of the second sealing layer 111 with active energy rays;
(Step 6) A step of forming a second wiring layer 113 electrically connected to the first wiring layer 109 by selectively forming a metal layer in the region (recess 117) on the surface of the second sealing layer 111 irradiated with active energy rays.

Moreover, the method for manufacturing the semiconductor device 100 preferably includes steps 1 to 6 and further includes the following step 7.
(Step 7) After step 3 of forming the first wiring layer 109 and before step 4 of forming the second sealing layer 111, a step of performing Ar plasma treatment on the surface of the first sealing layer 107 on which the first wiring layer 109 is provided. Each step will be described in more detail below.

In step 1, for example, a semiconductor element 103 is mounted on a substrate 101 in a conventional manner (FIG. 2(a)), and a first sealing layer 107 is formed (FIG. 2(b)). Compression molding or transfer molding is preferably used to form the first sealing layer 107 from the viewpoint of improving production stability and increasing the stability of sealing semiconductor elements such as chips and wires.

In step 2, active energy rays such as a laser are selectively irradiated to specific portions of the surface of first sealing layer 107. By the laser irradiation, for example, recesses 115 can be formed in the laser irradiated portions of first sealing layer 107 ( FIG. 2( c )). Recesses 115 have, for example, a region penetrating first sealing layer 107 in its thickness direction and a region extending in the in-plane direction of first sealing layer 107.
The laser can be appropriately selected from known lasers such as YAG laser, excimer laser, electromagnetic rays, etc., and YGA laser is preferred. The wavelength of the laser is not specified, but is, for example, 200 nm or more and 2000 nm or less, and from the viewpoint of thinning, is preferably 240 nm or more and 1100 nm or less. Among these, preferred examples of the laser include 248 nm, 308 nm, 355 nm, 515 nm, 532 nm, 1064 nm, and 1060 nm.
In addition, a surface cleaning step may be added after step 2 and before step 3.

In step 3, a metal film is selectively formed in a predetermined region of the first sealing layer 107 by LDS. Specifically, in LDS, active energy rays are irradiated onto the surface of the first sealing layer 107 containing an LDS additive to generate metal nuclei, and the metal nuclei are used as seeds to form a plating pattern in the energy ray irradiated region by plating treatment such as electroless plating. Based on this plating pattern, conductive members such as wiring and circuits can be formed. This will be explained in more detail below.

In step 3, a first wiring layer 109 is selectively formed in the laser irradiated portion of the surface of the first sealing layer 107, specifically in the recess 115 (FIG. 2(d)).
2( d ) shows an example in which, in step 3, first wiring layer 109 is formed on the inner wall of recess 115, over the entire thickness direction of first sealing layer 107, and over the surface of first sealing layer 107. First wiring layer 109 may be provided so as to be connected to conductor portion 105, and for example, first wiring layer 109 may be embedded in part or the entire recess 115.
Specifically, the first wiring layer 109 is made of a plating film.
Step 3 specifically includes the steps of applying a metal to the recess 115 and growing a plating layer of the metal in the recess 115 .

Either electrolytic plating or electroless plating may be used for the plating process. By plating the area irradiated with the laser in step 2, a circuit (plating layer) can be formed. There is no specific plating solution, and any known plating solution can be widely used. A plating solution containing a mixture of copper, nickel, gold, silver, and palladium as metal components may also be used.

When step 7 is performed after step 3 and before step 4, the components that are present on the first wiring layer 109 and that inhibit adhesion can be removed by step 7, and therefore the adhesion between the first sealing layer 107 and the second sealing layer 111 can be further improved. A specific example of a component that inhibits adhesion is a wax component that is contained in the thermosetting resin composition when the first sealing layer 107 is formed by transfer molding.

In step 7, specifically, the structure with the first wiring layer 109 is placed in an Ar (argon) plasma generator, Ar gas is supplied into the chamber at a flow rate of about 20 to 500 sccm, the pressure in the chamber is set to about 50 to 1000 Pa, and microwaves (for example, power of about 100 to 1000 W, frequency of about 1 to 20 MHz) are applied to generate Ar plasma, thereby performing plasma processing.

Next, in step 4, second sealing layer 111 is formed to cover the upper surfaces of first wiring layer 109 and first sealing layer 107 ( FIG. 3( a )). In order to improve production stability and to enhance the stability of sealing semiconductor elements such as chips and wires, second sealing layer 111 is preferably formed by vacuum lamination, compression molding, or transfer molding.
The thermosetting resin composition used to form second sealing layer 111 may be in a solid (eg, granular), sheet or liquid form.
More specifically, in the case of compression molding, a solid or sheet-shaped thermosetting resin composition is preferably used from the viewpoint of improving the resin thickness controllability of the second sealing layer. In addition, in the case of transfer molding, a solid thermosetting resin composition is preferably used from the viewpoint of improving material handling. In the case of vacuum lamination, a sheet-shaped thermosetting resin composition is used from the viewpoint of improving material handling.

In step 5, specific portions of the surface of second sealing layer 111 are selectively irradiated with active energy rays such as a laser, for example, using the method described above in step 2. By irradiating with the laser, for example, recesses 117 can be formed in the laser irradiated portions of second sealing layer 111 (FIG. 3(b)). Recesses 117 have, for example, a region that penetrates second sealing layer 111 in its thickness direction and a region that extends in the in-plane direction of second sealing layer 111.

In step 6, the second wiring layer 113 is selectively formed in the recess 117 by using, for example, the method described above in step 3. The second wiring layer 113 is specifically formed of a plating film.
3(b) and 1 show an example in which, in step 6, second wiring layer 113 is formed on the inner wall of recess 117, over the entire thickness direction of second sealing layer 111, and over the surface of second sealing layer 111. Second wiring layer 113 only needs to be provided so as to be connected to first wiring layer 109, and for example, second wiring layer 113 may be embedded in part or the entire recess 117.
Through the above steps, the semiconductor device 100 shown in FIG. 1 is obtained.

In this embodiment, by using a resin composition for LDS for forming first sealing layer 107 and second sealing layer 111, semiconductor device 100 having excellent adhesion between first sealing layer 107 or second sealing layer 111 and adjacent members can be easily and stably obtained. More specifically, it is also possible to improve the adhesion between first sealing layer 107 and first wiring layer 109 or second sealing layer 111, or the adhesion between second sealing layer 111 and first wiring layer 109 or second wiring layer 113.
Furthermore, in this embodiment, by processing the first wiring layer 109 and the second wiring layer 113 by LDS, the manufacturing stability of these wiring layers can be improved even when the first wiring layer 109 and the second wiring layer 113 are made finer and more complex.

Although FIG. 1 illustrates an example in which the sealing material is configured as a laminate of two sealing layers, the sealing material may have three or more sealing layers.
For example, a third sealing layer may be provided on the second sealing layer 111 of the semiconductor device 100, and a third wiring layer connected to the second wiring layer 113 may be provided, and these can be formed in accordance with the formation methods of the second sealing layer 111 and the second wiring layer 113, respectively.

Next, we will explain the thermosetting resin composition used in the first sealing layer 107 or the second sealing layer 111.

(Thermosetting resin composition)
In this embodiment, the thermosetting resin composition is a thermosetting resin composition for laser direct structuring (LDS). LDS is one of the methods for producing MID. Specifically, in LDS, the surface of a resin molded product containing an LDS additive is irradiated with active energy rays to generate metal nuclei, and the metal nuclei are used as seeds to form a plating pattern in the energy ray irradiated area by plating treatment such as electroless plating. Based on this plating pattern, conductive members such as wiring and circuits can be formed.

In this embodiment, the thermosetting resin composition for LDS (hereinafter also simply referred to as "thermosetting resin composition") contains a thermosetting resin, an inorganic filler, and a non-conductive metal compound that forms a metal nucleus when irradiated with active energy rays.
The components and the blending ratio of the thermosetting resin composition can be selected depending on the molding method of first sealing layer 107 and second sealing layer 111, respectively.

The shape of the thermosetting resin composition can also be selected depending on the molding method for first sealing layer 107 and second sealing layer 111, for example.
When first sealing layer 107 is formed by compression molding or transfer molding, for example, a granular or sheet-like thermosetting resin composition can be used.
When second sealing layer 111 is formed by compression molding, a thermosetting resin composition in a solid form, such as a sheet or granules, or in a liquid form can be used.
When second sealing layer 111 is formed by transfer molding, a solid thermosetting resin composition in a sheet form, for example, can be used.

(Thermosetting resin)
From the viewpoint of improving plating adhesion characteristics during microfabrication by LDS and from the viewpoint of reducing the wiring width and wiring spacing when forming a circuit, the thermosetting resin preferably contains one or more types selected from the group consisting of epoxy resins and bismaleimide resins.
From the viewpoint of improving curability, storage stability, heat resistance, moisture resistance, and chemical resistance, the thermosetting resin preferably contains an epoxy resin, and is more preferably an epoxy resin.
On the other hand, from the viewpoint of obtaining better heat resistance, the thermosetting resin preferably contains a bismaleimide resin, and more preferably is a bismaleimide resin.

As the epoxy resin, any monomer, oligomer or polymer having two or more epoxy groups in one molecule can be used, and the molecular weight and molecular structure thereof are not limited.
Examples of the epoxy resin include biphenyl type epoxy resins; bisphenol type epoxy resins such as bisphenol A type epoxy resins, bisphenol F type epoxy resins, and tetramethylbisphenol F type epoxy resins; stilbene type epoxy resins; novolac type epoxy resins such as phenol novolac type epoxy resins and cresol novolac type epoxy resins; polyfunctional epoxy resins such as trisphenol type epoxy resins exemplified by triphenol methane type epoxy resins and alkyl-modified triphenol methane type epoxy resins; phenol aralkyl type epoxy resins having a phenylene skeleton, naphthol aralkyl type epoxy resins having a phenylene skeleton, and the like. the epoxy resins include one or more selected from the group consisting of phenol aralkyl type epoxy resins such as phenol aralkyl type epoxy resins having a biphenylene skeleton, and naphthol aralkyl type epoxy resins having a biphenylene skeleton; naphthol type epoxy resins such as dihydroxynaphthalene type epoxy resins and epoxy resins obtained by glycidyl etherifying a dimer of dihydroxynaphthalene; triazine nucleus-containing epoxy resins such as triglycidyl isocyanurate and monoallyl diglycidyl isocyanurate; and bridged cyclic hydrocarbon compound-modified phenol type epoxy resins such as dicyclopentadiene-modified phenol type epoxy resins.
Of these, novolac epoxy resins, polyfunctional epoxy resins, and phenol aralkyl epoxy resins can be preferably used from the viewpoint of suppressing warping of a molded article obtained by curing the thermosetting resin composition and improving the balance of various properties such as filling property, heat resistance, and moisture resistance. From the same viewpoint, the epoxy resin preferably contains one or more selected from the group consisting of orthocresol novolac epoxy resins, phenol aralkyl epoxy resins having a biphenylene skeleton, and triphenylmethane epoxy resins, and more preferably contains one or more selected from the group consisting of orthocresol novolac epoxy resins and phenol aralkyl epoxy resins having a biphenylene skeleton.

Moreover, a bismaleimide resin is a (co)polymer of a compound having two or more maleimide groups.
The compound having two or more maleimide groups includes, for example, at least one of a compound represented by the following general formula (1) and a compound represented by the following general formula (2), which can increase the glass transition temperature of the cured product of the thermosetting resin composition and more effectively improve the heat resistance of the cured product.

In the above general formula (1), R ¹ is a divalent organic group having 1 to 30 carbon atoms, and may contain at least one of an oxygen atom and a nitrogen atom. From the viewpoint of improving the heat resistance of the cured product, it is more preferable that R ¹ is an organic group containing an aromatic ring. In this embodiment, examples of R ¹ include structures such as those of the following general formula (1a) or (1b).

In the above general formula (1a), ^R31 is a divalent organic group having 1 to 18 carbon atoms which may contain at least one of an oxygen atom and a nitrogen atom. In addition, each of the multiple ^R32s is independently a hydrogen atom or a substituted or unsubstituted hydrocarbon group having 1 to 4 carbon atoms.

In the above general formula (1b), the multiple R's exist independently, and R's represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a phenyl group, and are preferably hydrogen atoms. Furthermore, m is an average value and is a number between 1 and 5, preferably between 1 and 5, more preferably between 1 and 3, and even more preferably between 1 and 2.

Examples of the compound represented by the above general formula (1) that can be used in this embodiment include the compounds represented by the following formulae (1-1) to (1-3).

In the above general formula (2), the multiple ^R2s are each independently a hydrogen atom or a substituted or unsubstituted hydrocarbon group having 1 to 4 carbon atoms. n is an average value and is a number from 0 to 10, preferably from 0 to 5.

The thermosetting resin may further include other thermosetting resins. Examples of such thermosetting resins include one or more selected from the group consisting of benzoxazine resin, phenolic resin, urea resin, melamine resin, unsaturated polyester resin, polyurethane resin, diallyl phthalate resin, silicone resin, cyanate resin, polyimide resin, polyamideimide resin, and benzocyclobutene resin.

From the viewpoint of improving fluidity during molding and improving filling property and molding stability, the content of the thermosetting resin in the thermosetting resin composition is preferably 1 mass % or more, more preferably 2 mass % or more, and even more preferably 2.5 mass % or more, based on the total amount of the thermosetting resin composition.
On the other hand, from the viewpoint of improving the moisture resistance reliability and the reflow resistance, and from the viewpoint of suppressing warping of the molded body, the content of the thermosetting resin is preferably 15 mass % or less, more preferably 14 mass % or less, and further preferably 13 mass % or less, based on the entire thermosetting resin composition.
In this embodiment, the content relative to the entire thermosetting resin composition refers to the content relative to the entire solid content of the thermosetting resin composition excluding the solvent when the thermosetting resin composition contains a solvent. The solid content of the thermosetting resin composition refers to the non-volatile content in the thermosetting resin composition, and refers to the remainder excluding volatile components such as water and solvent.

(Hardening agent)
The thermosetting resin composition may contain a curing agent. The curing agent can be roughly divided into three types: polyaddition type curing agents, catalyst type curing agents, and condensation type curing agents. These may be used alone or in combination of two or more.

Examples of polyaddition type curing agents include aliphatic polyamines such as diethylenetriamine (DETA), triethylenetetramine (TETA), and metaxylylenediamine (MXDA), aromatic polyamines such as diaminodiphenylmethane (DDM), m-phenylenediamine (MPDA), and diaminodiphenylsulfone (DDS), as well as polyamine compounds including dicyandiamide (DICY) and organic acid dihydrazides; alicyclic acid anhydrides such as hexahydrophthalic anhydride (HHPA) and methyltetrahydrophthalic anhydride (MTHPA), trimellitic anhydride (TMA), and anhydrous anhydrides. The compound contains one or more selected from the group consisting of acid anhydrides including aromatic acid anhydrides such as pyromellitic acid (PMDA) and benzophenonetetracarboxylic acid (BTDA); phenolic resin curing agents such as novolac-type phenolic resins, polyvinylphenols, aralkyl-type phenolic resins, and biphenylene skeleton-containing phenol aralkyl-type resins; polymercaptan compounds such as polysulfides, thioesters, and thioethers; isocyanate compounds such as isocyanate prepolymers and blocked isocyanates; and organic acids such as carboxylic acid-containing polyester resins.

The catalyst type curing agent includes, for example, one or more selected from the group consisting of imidazole compounds such as 2-methylimidazole and 2-ethyl-4-methylimidazole (EMI24); and Lewis acids such as BF ₃ complexes.

The condensation type curing agent includes, for example, one or more selected from the group consisting of urea resins such as methylol group-containing urea resins; and melamine resins such as methylol group-containing melamine resins.

Among these, from the viewpoint of improving heat resistance, the thermosetting resin composition preferably contains one or more curing agents selected from phenolic resins, and more preferably contains a biphenylene skeleton-containing phenol aralkyl type resin.

From the viewpoint of realizing excellent fluidity during molding and improving filling property and moldability, the content of the curing agent in the thermosetting resin composition is preferably 0.5 mass % or more, more preferably 1 mass % or more, even more preferably 2 mass % or more, and still more preferably 3 mass % or more, based on the entire thermosetting resin composition.
On the other hand, from the viewpoint of improving the moisture resistance reliability and reflow resistance of the electronic component, and from the viewpoint of suppressing warping of the obtained molded body, the content of the curing agent is preferably 9 mass % or less, more preferably 8 mass % or less, and even more preferably 7 mass % or less, based on the entire thermosetting resin composition.

(Inorganic filler)
The inorganic filler includes, for example, one or more materials selected from the group consisting of fused silica such as fused crushed silica and fused spherical silica, silica (silicon dioxide) such as crystalline silica and amorphous silica, alumina, aluminum hydroxide, silicon nitride, and aluminum nitride. From the viewpoint of making the mechanical properties or thermal properties of the cured product of the thermosetting resin composition favorable, the inorganic filler preferably includes silica such as fused crushed silica, fused spherical silica, and crystalline silica, and more preferably is silica.

From the viewpoint of improving moldability, the _d50 particle size of the inorganic filler is preferably 1.0 μm or more, and more preferably 2.0 μm or more.
On the other hand, from the viewpoint of reducing the width of the plated wiring after laser processing, the d ₅₀ particle size of the inorganic filler is preferably 20 μm or less, more preferably 15 μm or less, and further preferably 10 μm or less.

Here, the particle size distribution of the inorganic filler can be measured on a volume basis using a commercially available laser diffraction particle size distribution measuring device (e.g., SALD-7000, manufactured by Shimadzu Corporation).

From the viewpoint of improving the heat resistance and moisture resistance of the cured product, the content of the inorganic filler in the thermosetting resin composition is preferably 65 mass % or more, more preferably 70 mass % or more, and even more preferably 75 mass % or more, based on the total mass of the thermosetting resin composition.
On the other hand, from the viewpoint of more effectively improving the fluidity and filling property during molding of the thermosetting resin composition, the content of the inorganic filler is preferably 95 mass % or less, more preferably 90 mass % or less, and further preferably 85 mass % or less, based on the entire thermosetting resin composition.

(Non-conductive metal compound that forms metal nuclei upon irradiation with active energy rays)
A non-conductive metal compound that forms a metal nucleus by irradiation with active energy rays (hereinafter, also simply referred to as a "non-conductive metal compound") is a non-conductive metal compound that forms a metal nucleus by irradiation with active energy rays. Such a compound acts as an LDS additive. The non-conductive metal compound is not limited as long as it can form a metal nucleus by irradiation with active energy rays. Although the detailed mechanism is unclear, it is thought that when such a non-conductive metal compound is irradiated with active energy rays such as a YAG laser having an absorbable wavelength range, the metal nucleus is activated (for example, reduced) to generate a metal nucleus that can be plated with metal. Then, when the surface of the cured product of the thermosetting resin composition in which the non-conductive metal compound is dispersed is irradiated with active energy rays, a seed region having a metal nucleus that can be plated with metal is formed on the irradiated surface. By using the obtained seed region, it is possible to form a plating pattern such as a circuit on the surface of the cured product of the thermosetting resin composition.

The non-conductive metal compound includes, for example, one or more selected from the group consisting of (i) spinel-type metal oxides, (ii) metal oxides selected from Groups 3 to 12 of the periodic table, and having two or more adjacent transition metal elements in said groups, and (iii) tin-containing oxides.

In the above (i), the spinel structure is one of the typical crystal structure types seen in _AB2O4 type compounds (A and B are metal elements) in _double oxides. The spinel structure may be either a normal spinel structure or an inverse spinel structure (B(AB) _O4 ) (where A and B are partially interchanged), but the normal spinel structure is more preferably used. In this case, A in the normal spinel structure may be copper.

Metal atoms constituting the spinel-type metal oxide can be, for example, copper or chromium. In other words, the non-conductive metal compound can contain a spinel-type metal oxide containing copper or chromium. For example, copper can be used as the metal atom from the viewpoint of improving adhesion with a copper-plated pattern.

In addition to copper and chromium, metal atoms such as antimony, tin, lead, indium, iron, cobalt, nickel, zinc, cadmium, silver, bismuth, arsenic, manganese, magnesium, and calcium may be contained in trace amounts. These trace metal atoms may be present as oxides. The content of the trace metal atoms may be 0.001 mass% or less of the total metal atoms in the metal oxide.

Spinel-type metal oxides have high thermal stability and can be durable in acidic or alkaline aqueous metallization baths. For example, by appropriately controlling the dispersibility of the thermosetting resin composition, the spinel-type metal oxide can be present in a highly oxidized state in unirradiated areas on the surface of the cured product of the thermosetting resin composition. An example of such a spinel-type metal oxide is that described in JP-T-2004-534408.

The metal oxide containing the transition metal element (ii) above is a metal oxide containing two or more transition metal elements selected from Groups 3 to 12 of the periodic table, and adjacent to the group. Here, the metal belonging to the transition metal element can be expressed as containing a metal of Group n and a metal of Group n+1 of the periodic table. The metal oxide containing the transition metal element may be a single oxide of these metals or a combination of two or more of them.

Metals belonging to group n of the periodic table include, for example, group 3 (scandium, yttrium), group 4 (titanium, zirconium, etc.), group 5 (vanadium, niobium, etc.), group 6 (chromium, molybdenum, etc.), group 7 (manganese, etc.), group 8 (iron, ruthenium, etc.), group 9 (cobalt, rhodium, iridium, etc.), group 10 (nickel, palladium, platinum), group 11 (copper, silver, gold, etc.), group 12 (zinc, cadmium, etc.), and group 13 (aluminum, gallium, indium, etc.).

Examples of metals in Group n+1 of the periodic table include Group 4 (titanium, zirconium, etc.), Group 5 (vanadium, niobium, etc.), Group 6 (chromium, molybdenum, etc.), Group 7 (manganese, etc.), Group 8 (iron, ruthenium, etc.), Group 9 (cobalt, rhodium, iridium, etc.), Group 10 (nickel, palladium, platinum), Group 11 (copper, silver, gold, etc.), Group 12 (zinc, cadmium, etc.), and Group 13 (aluminum, gallium, indium, etc.).
An example of the metal oxide containing such a transition metal element is described in JP-A-2004-534408.

The tin-containing oxide (iii) is a metal oxide containing at least tin. The metal atoms constituting the tin-containing oxide may contain antimony in addition to tin. Such a tin-containing oxide may contain tin oxide and antimony oxide. More specifically, the metal components contained in the tin-containing oxide may be 90% by mass or more of tin and 5% by mass or more of antimony. This tin-containing oxide may further contain lead and/or copper as the metal component. Specifically, the metal components contained in the tin-containing oxide may be, for example, 90% by mass or more of tin, 5 to 9% by mass of antimony, 0.01 to 0.1% by mass of lead, and 0.001 to 0.01% by mass of copper. Such a tin-containing oxide may contain, for example, tin oxide and antimony oxide, and one or more of lead oxide and copper oxide. The tin-containing oxide may contain trace metal atoms exemplified as spinel-type metal oxides.
The tin-containing oxide may be used in combination with the spinel-type metal oxide of (i) above or the metal oxide having a transition metal element of (ii) above.

The content of the non-conductive metal compound in the thermosetting resin composition is, for example, 2% by mass or more, preferably 4% by mass or more, and more preferably 8% by mass or more, based on the entire thermosetting resin composition, from the viewpoint of improving plating characteristics in the cured product of the thermosetting resin composition. Also, from the viewpoint of suppressing a decrease in insulation and an increase in dielectric tangent in the cured product of the thermosetting resin composition, and from the viewpoint of improving the fluidity of the thermosetting resin composition when the shape of the non-conductive metal compound is non-spherical, the content of the non-conductive metal compound is, for example, 20% by mass or less, preferably 18% by mass or less, and more preferably 15% by mass or less, based on the entire thermosetting resin composition.

In addition, the total content of the inorganic filler and the non-conductive metal compound in the thermosetting resin composition is preferably 70 mass % or more, more preferably 75 mass % or more, and even more preferably 80 mass % or more, based on the entire thermosetting resin composition, from the viewpoint of improving the resin mechanical properties and resin strength.
On the other hand, from the viewpoint of improving moldability, the total content of the inorganic filler and the non-conductive metal compound is preferably 98 mass % or less, more preferably 95 mass % or less, and even more preferably 90 mass % or less, based on the entire thermosetting resin composition.

(Other ingredients)
In this embodiment, the thermosetting resin composition may contain components other than the above-mentioned components.
For example, the thermosetting resin composition may further contain one or more agents selected from the group consisting of a coupling agent, an adhesion aid, and a curing accelerator.

(Coupling Agent)
From the viewpoint of improving the moldability of first sealing layer 107 or second sealing layer 111, the thermosetting resin composition preferably further contains a coupling agent.
From the same viewpoint, the coupling agent preferably contains one or more selected from the group consisting of mercaptosilane, aminosilane, and epoxysilane. From the viewpoint of continuous moldability, mercaptosilane is preferred, from the viewpoint of fluidity, secondary aminosilane is preferred, and from the viewpoint of adhesion, epoxysilane is preferred.

Among these, examples of epoxy silanes include γ-glycidoxypropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, etc., with γ-glycidoxypropyltrimethoxysilane being preferred.

Examples of aminosilanes include phenylaminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, N-β(aminoethyl)γ-aminopropyltrimethoxysilane, N-β(aminoethyl)γ-aminopropylmethyldimethoxysilane, N-phenyl-γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, N-β(aminoethyl)γ-aminopropyltriethoxysilane, N-(6-aminohexyl)3-aminopropyltrimethoxysilane, and N-(3-(trimethoxysilylpropyl)-1,3-benzenedimethanane, with N-phenyl-γ-aminopropyltrimethoxysilane being preferred. A latent aminosilane coupling agent in which the primary amino site of the aminosilane is protected by reacting it with a ketone or aldehyde may be used. The aminosilane may also have a secondary amino group.

Examples of mercaptosilanes include γ-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, and silane coupling agents that exhibit the same function as mercaptosilane coupling agents through thermal decomposition, such as bis(3-triethoxysilylpropyl)tetrasulfide and bis(3-triethoxysilylpropyl)disulfide, with γ-mercaptopropyltrimethoxysilane being preferred.

These silane coupling agents may be blended after being hydrolyzed in advance. These silane coupling agents may be used alone or in combination of two or more.

From the viewpoint of improving moldability by increasing the flow length of the thermosetting resin composition, the content of the coupling agent in the thermosetting resin composition is preferably 0.01 mass % or more, more preferably 0.05 mass % or more, and even more preferably 0.1 mass % or more, based on the total amount of the thermosetting resin composition.
On the other hand, from the viewpoint of suppressing an increase in water absorption of the cured product of the thermosetting resin composition and obtaining good rust prevention properties, the content of the coupling agent is preferably 1 mass % or less, more preferably 0.8 mass % or less, even more preferably 0.6 mass % or less, and even more preferably 0.4 mass % or less, based on the entire thermosetting resin composition.

(Cure Accelerator)
The curing accelerator may be any accelerator that accelerates the crosslinking reaction between the thermosetting resin and the curing agent, and any accelerator that is generally used in thermosetting resin compositions may be used.

The curing accelerator may contain one or more of the following: phosphorus-containing compounds such as organic phosphines, tetra-substituted phosphonium compounds, phosphobetaine compounds, adducts of phosphine compounds and quinone compounds, and adducts of phosphonium compounds and silane compounds; tertiary amines such as amidines, exemplified by 1,8-diazabicyclo[5.4.0]undecene-7 and benzyldimethylamine (BDMA), 2,4,6-trisdimethylaminomethylphenol (DMP-30), and nitrogen-containing compounds such as quaternary salts of the above amidines and amines. Among these, it is more preferable to contain a phosphorus-containing compound from the viewpoint of improving the curing properties. In addition, from the viewpoint of improving the balance between moldability and curing properties, it is more preferable to contain a compound having latency, such as a tetra-substituted phosphonium compound, a phosphobetaine compound, an adduct of a phosphine compound and a quinone compound, or an adduct of a phosphonium compound and a silane compound. From a similar perspective, the curing accelerator preferably includes one or more selected from triphenylphosphine, tetraphenylphosphonium bis(naphthalene-2,3-dioxy)phenylsilicate, and tetraphenylphosphonium-4,4'-sulfonyldiphenolate.

When the thermosetting resin composition contains a curing accelerator, the content of the curing accelerator is preferably 0.1 mass % or more, more preferably 0.15 mass % or more, and even more preferably 0.25 mass % or more, based on the total amount of the thermosetting resin composition, from the viewpoint of effectively improving the curability during molding.
On the other hand, from the viewpoint of improving fluidity during molding, the content of the curing accelerator is preferably 1 mass % or less, more preferably 0.8 mass % or less, and even more preferably 0.5 mass % or less, based on the total amount of the thermosetting resin composition.

The thermosetting resin composition may contain, in addition to the non-conductive metal compound, at least one type of organic, heat-stable metal chelate complex salt.
The thermosetting resin composition may contain additives such as surfactants, silicones, release agents, flame retardants, ion scavengers, colorants, low stress materials, and antioxidants, as necessary. These may be used alone or in combination of two or more.
The amount of each of these components in the thermosetting resin composition can be about 0.01 to 10% by mass based on the entire thermosetting resin composition.

In the present embodiment, the method for producing the thermosetting resin composition can be selected according to the shape and ingredients of the thermosetting resin composition. Specific examples of the shape of the thermosetting resin composition include solid shapes such as a sheet shape and a granular shape (e.g., a granular shape or a tablet shape); and liquid shapes.
For example, examples of a method for producing a liquid thermosetting resin composition include a method in which each component, additive, etc. are dispersed and kneaded using an apparatus such as a planetary mixer, a three-roll mill, a two-roll mill, or a mortar and pestle mixer, and then the mixture is degassed under vacuum.
In addition, as a method for producing a granular or sheet-like thermosetting resin composition, for example, a method of obtaining a mixture by mixing each component of the thermosetting resin composition by a known means, and melt-kneading the mixture to obtain a kneaded product can be mentioned. As a kneading method, for example, an extrusion kneader such as a single-screw kneading extruder or a twin-screw kneading extruder, or a roll-type kneader such as a mixing roll can be used, but it is preferable to use a twin-screw kneading extruder. After cooling, the kneaded product can be formed into a predetermined shape.

Although the embodiments of the present invention have been described above, these are merely examples of the present invention, and various configurations other than those described above can also be adopted.
Below, examples of reference forms are given.
1. A semiconductor element;
a first sealing material that seals the semiconductor element and a conductor portion provided on the semiconductor element;
a first wiring layer provided on the first sealing material and electrically connected to the conductor portion;
a second sealing material provided on the first sealing material and sealing the first sealing material and the first wiring layer;
a second wiring layer provided on the second sealing material and electrically connected to the first wiring layer;
Including,
The first and second encapsulants each include:
A thermosetting resin;
An inorganic filler;
a non-conductive metal compound which forms a metal nucleus when irradiated with active energy rays;
A semiconductor device comprising a cured product of first and second thermosetting resin compositions for LDS (LASER DIRECT STRUCTURE).
2. The semiconductor device according to 1., wherein the first and second thermosetting resin compositions for LDS further contain a coupling agent.
3. A step of preparing a structure having a semiconductor element and a first encapsulant that encapsulates the semiconductor element;
irradiating a specific portion of a surface of the first sealing material with active energy rays;
a step of selectively forming a metal layer in the region of the surface of the first sealing material irradiated with the active energy rays, thereby forming a first wiring layer electrically connected to a conductor portion provided on the semiconductor element;
forming a second sealing material on the first sealing material to seal the first sealing material and the first wiring layer;
irradiating a specific portion of a surface of the second sealing material with active energy rays;
forming a second wiring layer electrically connected to the first wiring layer by selectively forming a metal layer in the region of the surface of the second sealing material irradiated with the active energy rays;
Including,
The first and second encapsulants each include:
A thermosetting resin;
An inorganic filler;
a non-conductive metal compound which forms a metal nucleus when irradiated with active energy rays;
13. A method for manufacturing a semiconductor device, comprising: forming a semiconductor device using a cured product of a first and a second thermosetting resin composition for LDS (LASER DIRECT STRUCTURE), the first and second thermosetting resin compositions comprising:
4. The method for manufacturing a semiconductor device according to 3., further comprising, after the step of forming a first wiring layer and before the step of forming a second sealing material, a step of performing an Ar plasma treatment on the surface of the first sealing material on which the first wiring layer is provided.
5. The method for manufacturing a semiconductor device according to 3. or 4., wherein the second thermosetting resin composition for LDS is in a sheet form or a liquid form.

Example 1
A thermosetting resin composition for LDS was prepared and evaluated according to the formulation shown in Table 1. The components used in the thermosetting resin composition for LDS are as follows.

(Inorganic filler)
Inorganic filler 1: silicon dioxide, SC-2500-SQ, manufactured by Admatechs Co., Ltd., average particle size 0.6 μm
Inorganic filler 2: silicon dioxide, SC-5500-SQ, manufactured by Admatechs Co., Ltd., average particle size 1.6 μm
Inorganic filler 3: silicon dioxide, TS-6026, manufactured by Micron Company, average particle size 9.0 μm
(Coupling Agent)
Coupling agent 1: 3-glycidoxypropyltrimethoxysilane, S510, manufactured by Chisso Corporation Coupling agent 2: N-phenyl-γ-aminopropyltrimethoxysilane, CF-4083, manufactured by Dow Corning Toray Co., Ltd. (thermosetting resin)
Epoxy resin 1: phenol aralkyl type epoxy resin containing a biphenylene skeleton, NC3000, manufactured by Nippon Kayaku Co., Ltd. (hardener)
Curing agent 1: Biphenylene skeleton-containing phenol aralkyl resin, MEH-7851SS, manufactured by Meiwa Kasei Co., Ltd. (curing accelerator)
Curing accelerator 1: Tetraphenylphosphonium bis(naphthalene-2,3-dioxy)phenyl silicate Curing accelerator 2: Tetraphenylphosphonium-4,4'-sulfonyldiphenolate (mold release agent)
Release agent 1: Glycerol trimontanic acid ester, Lycorb-WE-4, Clariant Japan (additive: non-conductive metal compound)
Additive 1: Inorganic complex oxide, Black 3702, manufactured by Asahi Chemical Industries, Ltd. (silicone)
Silicone 1: Polyoxyalkylene epoxy modified dimethylpolysiloxane, FZ-3730, manufactured by Dow Corning Toray Co., Ltd.

(Preparation of Thermosetting Resin Composition)
The raw materials in the amounts shown in Table 1 were mixed at room temperature using a mixer, and then roll-kneaded at 70 to 100° C. The resulting kneaded mixture was then cooled and pulverized to obtain a granular thermosetting resin composition. The mixture was then tableted under high pressure to obtain a tablet-shaped thermosetting resin composition.

(Measurement of size of inorganic filler)
The d ₅₀ of the entire inorganic filler in the composition was measured using a laser diffraction particle size distribution measuring device (Shimadzu Corporation, SALD-7000).

(Moldability)
The resin composition obtained in each example was molded into a molded product having a size of 70 mm x 240 mm x 0.6 μm in thickness using a compression molding machine at 175° C. Samples of the obtained molded products were observed and evaluated according to the following criteria.
◎: No internal or external voids △: External voids observed ×: Unfilled

(Platability)
The resin composition obtained in each example was molded and cured at 175° C. to obtain a cured product. The surface of the obtained cured product was irradiated with a YAG laser (wavelength 1064 nm) to perform electroless copper plating, and the plating adhesion in the laser irradiated area was evaluated according to the following criteria.
◎: No unevenness on the plated surface ○: Some unevenness is visible on the plated surface, but there are no unplated areas △: Unevenness is visible on the plated surface, but there are no unplated areas ×: Severe unevenness is visible on the plated surface, and there are unplated areas

(Multi-stage structure)
The resin composition obtained in each example was subjected to a compression molding machine at 175 ° C. to obtain a molded product of 70 mm × 100 mm × thickness 0.3 μm. The surface of the molded product was irradiated with a YAG laser (wavelength 1064 nm) and electroless copper plating was performed to form a first layer. The sample molded as the first layer was used as a substrate to perform plasma treatment (under Ar gas atmosphere, power 200 W, treatment time 2 minutes), and then the resin composition obtained in each example was subjected to a compression molding machine at 175 ° C. to obtain a molded product of 70 mm × 100 mm × thickness 0.3 μm. As with the first layer, the surface of the molded product was irradiated with a YAG laser (wavelength 1064 nm) and electroless copper plating was performed to form a second layer. In the same manner as the formation procedure of the second layer, a third layer was further molded to produce a molded product with a multi-stage structure, and the resin molded product was evaluated.
The evaluation criteria for the resin compositions are shown below.
◎: Molded product is obtained. ×: Molded product is not obtained.

(Adhesion)
As an index of adhesion, the above multilayered product was subjected to an MSL (moisture sensitivity level: moisture absorption and heat resistance) test by the following method. The multilayered product described above in the section on multi-stage structure evaluation was treated under a specified moisture absorption condition ("L1" in Table 1, 85°C/85%, 168h) in accordance with IPC/JEDEC J-STD-033D, and then treated three times with 260°C reflow. The presence or absence of peeling at any of the interfaces between the first layer, the second layer, and the third layer was evaluated using an ultrasonic imaging device (Scanning Acoustic Tomograph: SAT, manufactured by Hitachi Power Solutions Co., Ltd.). The evaluation criteria are shown below.
Pass: No peeling in SAT observation ×: Peeling in SAT observation

As can be seen from Table 1, in Example 1, the moldability and plating properties of the sealing material were excellent, and the lamination properties of the multi-stage sealing material, as well as the adhesion between the molded products and with the copper plating, were excellent.

REFERENCE SIGNS LIST 100 Semiconductor device 101 Substrate 103 Semiconductor element 105 Conductor portion 107 First sealing layer 109 First wiring layer 111 Second sealing layer 113 Second wiring layer 115 Recess 117 Recess

Claims (5)

preparing a structure having a semiconductor element and a first encapsulant that encapsulates the semiconductor element;
irradiating a specific portion of a surface of the first sealing material with active energy rays;
a step of selectively forming a metal layer in the region of the surface of the first sealing material that has been irradiated with the active energy rays, thereby forming a first wiring layer that is electrically connected to a conductor portion provided on the semiconductor element;
forming a second sealing material on the first sealing material by compression molding , the second sealing material sealing the first sealing material and the first wiring layer;
a step of performing an Ar plasma treatment on a surface of the first sealing material on which the first wiring layer is provided, after the step of forming a first wiring layer and before the step of forming a second sealing material;
irradiating a specific portion of a surface of the second sealing material with active energy rays;
forming a second wiring layer electrically connected to the first wiring layer by selectively forming a metal layer in the region of the surface of the second sealing material irradiated with the active energy rays;
Including,
the step of preparing a structure includes a step of forming the first sealing material by compression molding;
The first and second encapsulants each include:
A thermosetting resin;
An inorganic filler;
a non-conductive metal compound which forms a metal nucleus when irradiated with active energy rays;
The semiconductor device is formed from a cured product of first and second thermosetting resin compositions for LDS (LASER DIRECT STRUCTURE), comprising: The method for manufacturing a semiconductor device according to claim 1 , wherein the first and second thermosetting resin compositions for LDS further contain a coupling agent. 3. The method for manufacturing a semiconductor device according to claim 1 , wherein the second thermosetting resin composition for LDS is in a sheet form or a liquid form. The first and second thermosetting resin compositions for LDS further comprise a curing agent;
The method for manufacturing a semiconductor device according to claim 1 , wherein the thermosetting resin includes an epoxy resin. The inorganic filler d ₅₀ 5. The method for manufacturing a semiconductor device according to claim 1, wherein the grain size is 1.0 [mu]m or more and 20 [mu]m or less.

Images