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JP7488149B2 - Vacuum processing apparatus and vacuum processing method - Google Patents
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JP7488149B2 - Vacuum processing apparatus and vacuum processing method - Google Patents

Vacuum processing apparatus and vacuum processing method Download PDF

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JP7488149B2
JP7488149B2 JP2020131960A JP2020131960A JP7488149B2 JP 7488149 B2 JP7488149 B2 JP 7488149B2 JP 2020131960 A JP2020131960 A JP 2020131960A JP 2020131960 A JP2020131960 A JP 2020131960A JP 7488149 B2 JP7488149 B2 JP 7488149B2
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謙 前平
朋子 橘高
耕 不破
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Ulvac Inc
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Description

本発明は真空処理装置と真空処理方法の技術分野に係り、特に、残留電荷を減少させる真空処理装置と真空処理方法に関する。 The present invention relates to the technical field of vacuum processing equipment and vacuum processing methods, and in particular to a vacuum processing equipment and vacuum processing method that reduce residual charge.

従来より、下記特許文献1に示されたように、基板を離脱させた時に生じる誘導電流を測定し、その値から残留電荷を消去するための逆バイアスの電圧値と印加時間を算出して予め記憶しておき、真空雰囲気中で電極に電圧を印加して基板を吸着して真空処理を行った後、基板を離脱させる際に、算出した電圧値の逆バイアス電圧を、算出した印加時間印加して、基板に発生した残留吸着力を低滅する方法がある。 As shown in the following Patent Document 1, a conventional method is to measure the induced current generated when the substrate is released, calculate the reverse bias voltage value and application time for erasing the residual charge from the measured value, and store the calculated voltage value and application time in advance. After applying a voltage to the electrodes in a vacuum atmosphere to adsorb the substrate and perform vacuum processing, when the substrate is released, a reverse bias voltage of the calculated voltage value is applied for the calculated application time to reduce the residual adsorption force generated in the substrate.

しかしながら近年ではデバイスの種類が多様化し、連続して真空処理を行う基板が同一種類でなく複数種類が混在する場合や、基板の薄膜化により、基板の反り量が異なる場合など、基板に生じた残留電荷を消去するために、一定値の逆バイアス電圧を一定の印加時間印加するだけでは、残留吸着力を除去することができず、その結果、離脱の際に基板が破損したり、又は、離脱の際の跳ね上がりによって、基板の搬送ズレが生じる等の問題が発生した。この問題は、FPDや実装基板に代表されるような、基板と昇降ピンとの関係に於いて基板の剛性が低い(断面二次モーメントが小さくなる)運用が行われる(または、基板のたわみが許容される運用が行われる)、大型の基板において著しい。これは基板の大型化と薄膜化によって、従来は問題とされなかった同一の微小な厚さ変動であっても、誘電率としては大きく変動するために、結果として残留電荷を低減しきれない事も原因の一つであると考えられている。 However, in recent years, the types of devices have become more diverse, and in some cases, the substrates that are continuously vacuum-processed are not the same type but a mixture of several types, or the amount of warping of the substrate varies due to the thinning of the substrate. In order to erase the residual charge on the substrate, the residual adhesion force cannot be removed by simply applying a constant reverse bias voltage for a certain period of time. As a result, problems such as damage to the substrate during removal or misalignment of the substrate due to the substrate jumping up during removal have occurred. This problem is particularly noticeable in large substrates, such as FPDs and mounting substrates, where the substrate is operated with low rigidity (small moment of area) in the relationship between the substrate and the lift pins (or where substrate deflection is tolerated). This is thought to be due in part to the fact that the same minute thickness variation that was not previously a problem can cause a large variation in dielectric constant due to the larger and thinner substrates, resulting in inability to completely reduce the residual charge.

特許第3913355号公報Patent No. 3913355

本発明は上記従来技術の不都合を解決するために創作されたものであり、残留電荷を確実に消滅させる技術を提供する。 The present invention was created to solve the problems of the conventional technology described above, and provides a technology that reliably eliminates residual charges.

上記課題を解決するために、本発明は、真空槽と、前記真空槽内に配置され、装置本体に互いに離間された第一種類の電極と第二種類の電極とが設けられた吸着装置と、前記第一種類の電極と前記第二種類の電極との間に、前記吸着装置に配置された基板を吸着させる吸着電圧と、前記吸着電圧と逆極性であって残留電荷を減少させる第一の離間電圧とを印加する電源装置と、を有し、前記第一種類の電極と前記第二種類の電極との間に前記吸着電圧を印加し、前記吸着装置に吸着された製造基板を真空雰囲気中で処理し、前記第一種類の電極と前記第二種類の電極との間に前記第一の離間電圧を印加して、前記吸着装置と前記製造基板との間に蓄積された電荷を減少させて前記吸着装置と前記製造基板とを分離させる真空処理装置であって、前記装置本体には、前記第一種類の電極と前記第二種類の電極とから離間され、前記吸着装置に吸着された前記製造基板の縁付近の部分と対面する場所に主測定電極が設けられ、前記真空処理装置には、前記吸着装置に吸着された前記製造基板のうち前記主測定電極と対面する部分である主対面部分を前記吸着装置から離間させる部分離間装置と、前記主測定電極に流れる電流である主測定電流の大きさを測定する電流測定装置と、が設けられ、前記主測定電極の面積は、前記第一種類の電極の面積と前記第二種類の電極の面積とよりも小さくされ、前記製造基板を吸着する際には、前記主測定電極には前記第一種類の電極に印加される電圧と同じ極性で同じ大きさの電圧が印加される真空処理装置である。
また、本発明は、前記部分離間装置は、移動可能な測定ピンを有し、前記吸着装置に吸着された前記製造基板のうち、前記測定ピンが接触する接触部分は前記製造基板の縁と前記主対面部分との間に配置された真空処理装置である。
また、本発明は、前記吸着装置に吸着され、前記第一の離間電圧が印加された前記製造基板の残留電荷を減少させる第二の離間電圧の極性と大きさと印加時間とを、測定した前記主測定電流の向きと大きさとから求め、前記電源装置によって前記第二の離間電圧を前記第一、第二種類の電極間に印加させる制御装置を有する真空処理装置である。
また、本発明は、前記第二の離間電圧の極性と大きさと印加時間に対して前記主測定電流の向きと大きさとが対応付けられた電流電圧関係が記憶された記憶装置を有し、前記制御装置は、前記第二の離間電圧の極性と大きさと印加時間とを、前記主測定電流の向きと大きさとを前記電流電圧関係に照合して求める真空処理装置である。
また、本発明は、前記装置本体には、前記第一種類の電極と前記第二種類の電極と前記主測定電極とから離間され、前記主測定電極に隣接し、前記第一種類の電極と前記第二種類の電極とよりも小さくされた副測定電極が設けられ、前記副測定電極は、前記装置本体に配置された前記製造基板のうち前記副測定電極と対面する部分である副対面部分と前記主対面部分とが前記部分離間装置によって前記吸着装置から離間された後、前記吸着装置から離間される場所に配置され、前記副測定電極には前記製造基板を吸着する際には前記主測定電極と同じ極性で同じ大きさの電圧が印加され、前記電流測定装置により前記副測定電極に流れる電流である副測定電流の向きと大きさとが測定される真空処理装置である。
また、本発明は、前記吸着装置に吸着され、前記第一の離間電圧が印加された前記製造基板の残留電荷を減少させる第二の離間電圧の大きさと印加時間とを、測定した前記主測定電流の大きさと、測定した前記副測定電流の大きさとから求めて前記第一種類の電極と前記第二種類の電極との間に印加する制御装置を有する真空処理装置である。
また、本発明は、前記第二の離間電圧の極性と大きさと印加時間に対して前記主測定電流の向きと大きさとが対応付けられた電流電圧関係が記憶された記憶装置を有し、前記制御装置は、前記第二の離間電圧の極性と大きさと印加時間とを、前記主測定電流の向きと大きさと、前記副測定電流の向きと大きさとを前記電流電圧関係に照合して求める真空処理装置である。
また、本発明は、互いに離間された第一種類の電極と第二種類の電極とが装置本体に設けられた吸着装置の、前記第一種類の電極と前記第二種類の電極との間に吸着電圧を印加して前記吸着装置に製造基板を吸着させる吸着工程と、前記吸着装置に吸着された前記製造基板を真空雰囲気中で処理する処理工程と、前記第一種類の電極と前記第二種類の電極との間に前記吸着電圧と逆極性の第一の離間電圧を印加して残留電荷を減少させる第一の残留電荷減少工程と、前記製造基板を前記吸着装置から離間させる離間工程と、を有する真空処理方法であって、前記処理工程では、前記第一種類の電極と前記第二種類の電極とよりも小さく、前記吸着装置に吸着された前記製造基板の縁付近の部分と対面する場所に配置された主測定電極に前記第一種類の電極に印加される電圧と同じ極性で同じ大きさの電圧を印加し、第一の残留電荷減少工程後、前記離間工程を行う前に、前記吸着装置に吸着された前記製造基板のうちの前記主測定電極と対面する部分である主対面部分を前記吸着装置から離間させることで前記主測定電極に電流を流し、前記主測定電極に流れた電流である主測定電流の大きさを測定する電流測定工程が設けられた真空処理方法である。
また、本発明は、前記電流測定工程では、前記吸着装置に吸着された前記製造基板のうち、前記主対面部分と前記製造基板の縁との間の部分に前記主対面部分を前記吸着装置から離間させる力を印加する真空処理方法である。
また、本発明は、前記電流測定工程後、前記離間工程の前に、前記第一種類の電極と前記第二種類の電極との間に第二の離間電圧を印加する第二の残留電荷減少工程が設けられた真空処理方法であって、前記電流測定工程では、前記吸着装置に吸着され、前記第一の離間電圧が印加された前記製造基板の残留電荷を減少させる前記第二の離間電圧の極性と大きさと印加時間とを、測定した前記主測定電流の向きと大きさとから求める真空処理方法である。
また、本発明は、前記電流測定工程では、前記第二の離間電圧の極性と大きさと印加時間に対して前記主測定電流の向きと大きさとが対応付けられた電流電圧関係に、測定された前記主測定電流の向きと大きさとを照合して前記第二の離間電圧の極性と大きさと印加時間とを求める真空処理方法である。
また、本発明は、前記処理工程では、前記装置本体の前記主測定電極に隣接し、前記第一種類の電極と前記第二種類の電極と前記主測定電極とから絶縁された場所に設けられ、前記第一種類の電極と前記第二種類の電極とよりも小さくされた副測定電極に前記主測定電極と同じ極性で同じ大きさの電圧を印加し、前記電流測定工程では、前記吸着装置に吸着された前記製造基板のうち前記副測定電極と対面する部分である副対面部分を、前記主対面部分を離間させた後に前記吸着装置から離間させることで前記副測定電極に電流を流し、前記副測定電極に流れた電流である副測定電流の大きさを測定する真空処理方法である。
また、本発明は、前記電流測定工程後、前記離間工程の前に、前記第一種類の電極と前記第二種類の電極との間に第二の離間電圧を印加する第二の残留電荷減少工程が設けられた真空処理方法であって、前記電流測定工程後、前記第二の残留電荷減少工程の前に、前記吸着装置に吸着され、前記第一の離間電圧が印加された前記製造基板の残留電荷を減少させる前記第二の離間電圧の大きさと印加時間とを、測定した前記主測定電流の大きさと、測定された前記副測定電流の大きさとから求める求条件工程が設けられた真空処理方法である。
また、本発明は、前記第二の離間電圧の大きさと印加時間に対して前記主測定電流の大きさと前記副測定電流の大きさとが対応付けられた電流電圧関係に、測定された前記主測定電流の大きさと測定された前記副測定電流の大きさとを照合して前記第二の離間電圧の大きさと印加時間とを求める真空処理方法である。
また、本発明は、前記第二の離間電圧を印加する際には、前記主測定電極を前記第一種類の電極と前記第二種類の電極とから絶縁させる真空処理方法である。
また、本発明は、前記第二の離間電圧を印加する際には、前記主測定電極と前記副測定電極とを前記第一種類の電極と前記第二種類の電極とから絶縁させる真空処理方法である。
In order to solve the above problems, the present invention provides a vacuum processing apparatus including: a vacuum chamber; a suction device disposed in the vacuum chamber, the device body being provided with a first type of electrode and a second type of electrode spaced apart from each other; and a power supply device for applying, between the first type of electrode and the second type of electrode, a suction voltage for suctioning a substrate disposed on the suction device, and a first separation voltage having a polarity opposite to that of the suction voltage and for reducing residual charge, the suction voltage being applied between the first type of electrode and the second type of electrode, processing a manufactured substrate suctioned by the suction device in a vacuum atmosphere, and applying the first separation voltage between the first type of electrode and the second type of electrode to reduce charges accumulated between the suction device and the manufactured substrate, thereby separating the suction device and the manufactured substrate. a main measurement electrode is provided in the main body at a position spaced apart from the first type of electrode and the second type of electrode and facing a portion near the edge of the manufacturing substrate adsorbed to the suction device, and the vacuum processing apparatus is provided with a separation device that separates a main facing portion of the manufacturing substrate adsorbed to the suction device, which is a portion facing the main measurement electrode, from the suction device, and a current measuring device that measures the magnitude of a main measurement current that is a current flowing through the main measurement electrode, and the area of the main measurement electrode is made smaller than the area of the first type of electrode and the area of the second type of electrode, and when the manufacturing substrate is adsorbed, a voltage of the same polarity and magnitude as the voltage applied to the first type of electrode is applied to the main measurement electrode.
The present invention also relates to a vacuum processing apparatus, wherein the part separation device has a movable measurement pin, and the contact portion of the manufacturing substrate adsorbed to the suction device with which the measurement pin comes into contact is positioned between the edge of the manufacturing substrate and the main facing portion.
The present invention also provides a vacuum processing apparatus having a control device that determines the polarity, magnitude and application time of a second spacing voltage that reduces the residual charge of the production substrate that has been adsorbed by the suction device and to which the first spacing voltage has been applied, from the direction and magnitude of the measured main measurement current, and applies the second spacing voltage between the first and second types of electrodes using the power supply device.
The present invention also provides a vacuum processing apparatus having a memory device that stores a current-voltage relationship in which the polarity, magnitude, and application time of the second separation voltage are associated with the direction and magnitude of the main measurement current, and the control device determines the polarity, magnitude, and application time of the second separation voltage and the direction and magnitude of the main measurement current by comparing them with the current-voltage relationship.
The present invention also provides a vacuum processing apparatus in which the apparatus main body is provided with a secondary measurement electrode that is spaced apart from the first type of electrode, the second type of electrode, and the main measurement electrode, adjacent to the main measurement electrode, and smaller than the first type of electrode and the second type of electrode, and the secondary measurement electrode is arranged at a location that is separated from the suction device after the secondary facing portion, which is a portion of the manufacturing substrate arranged in the apparatus main body that faces the secondary measurement electrode, and the main facing portion are separated from the suction device by the part separation device, and a voltage of the same polarity and magnitude as the main measurement electrode is applied to the secondary measurement electrode when the manufacturing substrate is adsorbed, and the direction and magnitude of the secondary measurement current, which is a current flowing through the secondary measurement electrode, is measured by the current measuring device.
The present invention also provides a vacuum processing apparatus having a control device that determines the magnitude and application time of a second separation voltage that reduces residual charge on the production substrate that is adsorbed by the adsorption device and to which the first separation voltage has been applied, from the measured magnitude of the main measurement current and the measured magnitude of the secondary measurement current, and applies the second separation voltage between the first type of electrode and the second type of electrode.
The present invention also provides a vacuum processing apparatus having a memory device that stores a current-voltage relationship in which the polarity, magnitude, and application time of the second separation voltage are associated with the direction and magnitude of the main measurement current, and the control device determines the polarity, magnitude, and application time of the second separation voltage, the direction and magnitude of the main measurement current, and the direction and magnitude of the secondary measurement current by comparing them with the current-voltage relationship.
The present invention also provides a vacuum processing method including the steps of: an attraction step of applying an attraction voltage between a first type of electrode and a second type of electrode spaced apart from each other to an attraction device provided on an apparatus body, thereby causing the attraction device to attract a manufactured substrate; a processing step of processing the manufactured substrate attracted to the attraction device in a vacuum atmosphere; a first residual charge reduction step of applying a first separation voltage having a polarity opposite to that of the attraction voltage between the first type of electrode and the second type of electrode, thereby reducing residual charge; and a separation step of separating the manufactured substrate from the attraction device, wherein in the processing step: This vacuum processing method includes a current measurement process in which a voltage of the same polarity and magnitude as the voltage applied to the first type of electrode is applied to a main measurement electrode that is smaller than the first type of electrode and the second type of electrode and is arranged in a position facing a portion near the edge of the manufacturing substrate adsorbed to the suction device, and after a first residual charge reduction process and before performing the separation process, a main facing portion of the manufacturing substrate adsorbed to the suction device that faces the main measurement electrode is separated from the suction device to pass a current through the main measurement electrode, and the magnitude of the main measurement current that flows through the main measurement electrode is measured.
The present invention also provides a vacuum processing method in which, in the current measurement process, a force is applied to a portion of the manufacturing substrate between the main facing portion and an edge of the manufacturing substrate adsorbed to the suction device, causing the main facing portion to move away from the suction device.
The present invention also provides a vacuum processing method including a second residual charge reduction process, after the current measurement process and before the separation process, of applying a second separation voltage between the first type of electrode and the second type of electrode, wherein in the current measurement process, the polarity, magnitude and application time of the second separation voltage that reduces the residual charge of the production substrate that is adsorbed by the adsorption device and to which the first separation voltage has been applied are determined from the direction and magnitude of the measured main measurement current.
The present invention also provides a vacuum processing method in which, in the current measurement step, the polarity, magnitude and application time of the second separation voltage are determined by comparing the measured direction and magnitude of the main measurement current with a current-voltage relationship in which the polarity, magnitude and application time of the second separation voltage correspond to the direction and magnitude of the main measurement current.
The present invention also relates to a vacuum processing method in which, in the processing step, a voltage of the same polarity and magnitude as that of the main measurement electrode is applied to a secondary measurement electrode that is adjacent to the main measurement electrode of the apparatus main body, is located insulated from the first type electrode, the second type electrode, and the main measurement electrode, and is smaller than the first type electrode and the second type electrode, and in the current measurement step, a secondary facing portion, which is the portion of the manufacturing substrate adsorbed to the suction device that faces the secondary measurement electrode, is separated from the suction device after the main facing portion is separated, thereby passing a current through the secondary measurement electrode, and the magnitude of the secondary measurement current that flows through the secondary measurement electrode is measured.
The present invention is also a vacuum processing method which includes a second residual charge reduction step of applying a second separation voltage between the first type of electrode and the second type of electrode after the current measurement step and before the separation step, and which includes a condition determination step of determining, after the current measurement step and before the second residual charge reduction step, the magnitude and application time of the second separation voltage which reduces the residual charge of the production substrate which has been adsorbed by the chucking device and to which the first separation voltage has been applied, from the measured magnitude of the main measurement current and the measured magnitude of the secondary measurement current.
The present invention is also a vacuum processing method in which the magnitude and application time of the second separation voltage are determined by comparing the measured magnitude of the main measurement current with the measured magnitude of the secondary measurement current in a current-voltage relationship in which the magnitude of the main measurement current and the magnitude of the secondary measurement current correspond to the magnitude and application time of the second separation voltage.
The present invention also provides a vacuum processing method, wherein when the second separation voltage is applied, the main measurement electrode is insulated from the first type of electrodes and the second type of electrodes.
The present invention also provides a vacuum processing method, in which the main measurement electrode and the secondary measurement electrode are insulated from the first type of electrodes and the second type of electrodes when the second separation voltage is applied.

残留電荷を消滅させた後、製造基板を吸着装置から分離することができるので、基板の破損や搬送ズレが生じない。 After the residual charge is eliminated, the manufactured substrate can be separated from the suction device, preventing damage to the substrate or misalignment during transport.

実際に吸着装置から離間させようとする製造基板の主対面部分を吸着装置から離間させ、そのときに主測定電極に流れる主測定電流の極性と大きさを測定するので、実際に吸着装置から離間させようとする製造基板と吸着装置の残留電荷を測定することができる。 The main facing part of the manufacturing substrate that is to be actually separated from the suction device is separated from the suction device, and the polarity and magnitude of the main measurement current that flows through the main measurement electrode at that time is measured, so that the residual charge of the manufacturing substrate that is to be actually separated from the suction device and the suction device can be measured.

異なる大きさの主測定電流が測定された複数の製造基板について、残留電荷を減少させる第二の離間電圧の極性と大きさと印加時間とを求め、求めた第二の離間電圧の極性と大きさと印加時間に対して、主測定電流の極性と大きさとを関係づけた電流電圧関係を記憶装置に記憶しておくと、異なる種類や厚みが相違する製造基板であっても、測定した主測定電流の極性と大きさとを電流電圧関係に照合することで、残留電荷を減少させる第二の離間電圧の極性と大きさと印加時間とを求めることができる。 For multiple manufactured boards on which different magnitudes of main measurement current were measured, the polarity, magnitude, and application time of the second separation voltage that reduces the residual charge are determined, and a current-voltage relationship that correlates the polarity and magnitude of the main measurement current to the determined polarity, magnitude, and application time of the second separation voltage is stored in a storage device.By comparing the polarity and magnitude of the measured main measurement current with the current-voltage relationship, the polarity, magnitude, and application time of the second separation voltage that reduces the residual charge can be determined even for manufactured boards of different types or thicknesses.

主測定電極に流れる主測定電流の極性と大きさとに対して、残留電荷を減少させる第二の離間電圧の極性と大きさと印加時間の関係を電流電圧関係に加入させておくと、主測定電流と副測定電流とから第二の離間電圧の極性と大きさと印加時間とを求めることができるので、正確な第二の離間電圧が得られる。 By incorporating into the current-voltage relationship the relationship between the polarity and magnitude of the main measurement current flowing through the main measurement electrode and the polarity, magnitude, and application time of the second separation voltage that reduces the residual charge, the polarity, magnitude, and application time of the second separation voltage can be determined from the main measurement current and the secondary measurement current, and an accurate second separation voltage can be obtained.

本発明の真空処理装置の一例An example of the vacuum processing apparatus of the present invention 本発明に用いる吸着装置の平面図Plan view of an adsorption device used in the present invention 製造基板のうち主測定電極と対面する主対面部分が吸着装置から離間したときの状態を示す図FIG. 13 is a diagram showing a state in which a main facing portion of the manufacturing substrate that faces a main measurement electrode is separated from the suction device. 製造基板のうち副測定電極と対面する副対面部分が吸着装置から離間したときの状態を示す図FIG. 13 is a diagram showing a state in which a secondary facing portion of the manufacturing substrate that faces the secondary measurement electrode is separated from the suction device. 吸着装置の他の例Other examples of adsorption devices

図1の符号105は、本発明の真空処理装置を示している。
この真空処理装置105はスパッタリング装置であり、真空槽111と、真空槽111の内部に配置された吸着装置112と、吸着装置112上に配置されたスパッタリングターゲット141とを有している。
Reference numeral 105 in FIG. 1 denotes a vacuum processing apparatus of the present invention.
This vacuum processing apparatus 105 is a sputtering apparatus, and includes a vacuum chamber 111 , an adsorption device 112 disposed inside the vacuum chamber 111 , and a sputtering target 141 disposed on the adsorption device 112 .

吸着装置112は絶縁性材料から成る板状の装置本体129を有しており、装置本体129の内部には、それぞれ薄膜状又は薄板状の第一~第四の吸着電極121~124と主測定電極125と、主測定電極125とは離間された副測定電極126とが設けられている。 The suction device 112 has a plate-shaped device body 129 made of an insulating material, and inside the device body 129 are provided first to fourth suction electrodes 121 to 124, each of which has a thin film or thin plate shape, a main measurement electrode 125, and a secondary measurement electrode 126 that is spaced apart from the main measurement electrode 125.

第一~第四の吸着電極121~124と主測定電極125と副測定電極126との表面は、装置本体129の内部で同一平面に位置するように配置されている。 The surfaces of the first to fourth chucking electrodes 121 to 124, the main measurement electrode 125, and the secondary measurement electrode 126 are arranged so as to be located on the same plane inside the device body 129.

吸着装置112の表面は電極平面と平行にされており、従って、吸着装置112の表面と、第一~第四の吸着電極121~124と主測定電極125と副測定電極126との表面との間には装置本体129を構成する絶縁性材料が一定厚みで配置されている。絶縁性材料が一定厚みでない場合であっても、厚みに従った補正計算を施すことで対処することができる。 The surface of the suction device 112 is parallel to the electrode plane, and therefore an insulating material constituting the device body 129 is arranged at a constant thickness between the surface of the suction device 112 and the surfaces of the first to fourth suction electrodes 121 to 124, the main measurement electrode 125, and the secondary measurement electrode 126. Even if the insulating material is not of a constant thickness, this can be dealt with by performing a correction calculation according to the thickness.

第一~第四の吸着電極121~124と主測定電極125と副測定電極126との表面が位置する平面を電極平面とすると、図2は、電極平面上の部分の装置本体129を除去した状態の吸着装置112の平面図である。図1中の吸着装置112は、吸着装置112を、図2のA-A線に相当する截断線で截断したときの断面図である。 If the plane on which the surfaces of the first to fourth suction electrodes 121 to 124, the main measurement electrode 125, and the secondary measurement electrode 126 are located is defined as the electrode plane, FIG. 2 is a plan view of the suction device 112 with the device body 129 on the electrode plane removed. The suction device 112 in FIG. 1 is a cross-sectional view of the suction device 112 cut along a cut line corresponding to line A-A in FIG. 2.

第一~第三の吸着電極121~123は円形のリング形形状であり、第四の吸着電極124は円形形状である。装置本体129は円形形状であり、第一~第三の吸着電極121~123は、異なる直径で形成されており、第一~第四の吸着電極121~124は、吸着装置112の縁から内側に向けて、この順序で一定間隔を空けて配置されている。 The first to third suction electrodes 121 to 123 are circular ring-shaped, and the fourth suction electrode 124 is circular. The device body 129 is circular, the first to third suction electrodes 121 to 123 are formed with different diameters, and the first to fourth suction electrodes 121 to 124 are arranged in this order at regular intervals from the edge of the suction device 112 toward the inside.

主測定電極125と副測定電極126とは、第一~第四の吸着電極121~124のうち、いずれの吸着電極よりも小面積にされており、ここでは最外周に位置する第一の吸着電極121は、一部が除去されて、除去された部分に主測定電極125と副測定電極126とが配置されている。 The main measurement electrode 125 and the secondary measurement electrode 126 have a smaller area than any of the first to fourth chucking electrodes 121 to 124. Here, a portion of the first chucking electrode 121 located on the outermost periphery has been removed, and the main measurement electrode 125 and the secondary measurement electrode 126 are disposed in the removed portion.

真空槽111の外部には、主昇降装置137と測定用昇降装置138とが配置されている。 A main lifting device 137 and a measurement lifting device 138 are arranged outside the vacuum chamber 111.

真空槽111の底面には貫通孔が形成されており、真空槽111の外部には、縁が底面の貫通孔を取り囲むように、複数個の昇降用ベローズ146と少なくとも1個の測定用ベローズ131とが底面に設けられている。 A through hole is formed in the bottom surface of the vacuum chamber 111, and on the outside of the vacuum chamber 111, a plurality of lifting bellows 146 and at least one measurement bellows 131 are provided on the bottom surface so that their edges surround the through hole in the bottom surface.

図2に示すように、吸着装置112には複数個の昇降孔145と、一個の測定孔135が形成され、測定孔135は真空槽111の底面の貫通孔と同一直線上に位置しており、各昇降孔145と貫通孔と昇降用ベローズ146との内部には、一端が主昇降装置137に接続された棒状の昇降ピン148が配置され、測定孔135と貫通孔と測定用ベローズ131とには、一端が測定用昇降装置138に接続された棒状の測定ピン132が配置されている。 As shown in FIG. 2, the suction device 112 has a number of lifting holes 145 and one measurement hole 135, and the measurement hole 135 is positioned in the same straight line as the through hole in the bottom surface of the vacuum chamber 111. Inside each of the lifting holes 145, through holes, and lifting bellows 146, a rod-shaped lifting pin 148 is disposed, one end of which is connected to the main lifting device 137. Inside the measurement hole 135, through hole, and measurement bellows 131, a rod-shaped measurement pin 132 is disposed, one end of which is connected to the measurement lifting device 138.

なお図2に於いては測定孔135を形成した例を用いたが、以降一連の測定孔135に関わる機能について、昇降孔145の少なくとも一個について兼用出来る構成としても良い。兼用構成とした場合は昇降ピン148と測定ピン132について同一の昇降機構とする事が出来、またピンの総本数を削減出来た簡素化した構成とすることも可能であり、かつ最大で昇降孔145と同数の測定孔135を設ける事が出来る事から、測定点数の平均や分布状況の把握が可能となり、より高精度な測定が可能な構成とも出来る。 In FIG. 2, an example is shown in which a measurement hole 135 is formed, but the functions related to the series of measurement holes 135 described below may be configured so that at least one of the lift holes 145 can be shared. In the case of a shared configuration, the lift pins 148 and the measurement pins 132 can be made to have the same lift mechanism, and it is also possible to have a simplified configuration in which the total number of pins can be reduced. Furthermore, since it is possible to provide a maximum of the same number of measurement holes 135 as the lift holes 145, it becomes possible to grasp the average number of measurement points and the distribution situation, and a configuration that allows for more accurate measurements can be achieved.

主昇降装置137の動作と測定用昇降装置138の動作により、昇降ピン148と測定ピン132とは、昇降用ベローズ146と測定用ベローズ131との伸縮を伴って移動する。ここでは電極平面と吸着装置112の表面とは水平であり、昇降ピン148と測定ピン132とは立設されている。 By the operation of the main lifting device 137 and the measurement lifting device 138, the lifting pin 148 and the measurement pin 132 move with the expansion and contraction of the lifting bellows 146 and the measurement bellows 131. Here, the electrode plane and the surface of the suction device 112 are horizontal, and the lifting pin 148 and the measurement pin 132 are erected.

主昇降装置137と測定用昇降装置138とにより、昇降ピン148の上方の先端と測定ピン132の上方の先端とは、吸着装置112の表面上から突き出された位置と、吸着装置112の内部に収容される位置との間で移動する。 The main lifting device 137 and the measurement lifting device 138 move the upper end of the lifting pin 148 and the upper end of the measurement pin 132 between a position protruding from the surface of the suction device 112 and a position housed inside the suction device 112.

主昇降装置137と測定用昇降装置138とは、2点間(突出位置、収容位置)の移動に於いて同一の動特性を示す様に構成される。例としては、フィードバックを伴う位置制御、ソレノイドコイルや気体圧力およびシリンダを利用する力制御、電動機を利用した速度制御、によって2点間の移動が同一の動特性が担保される。典型的な同一の動特性の例としては、主昇降装置137と測定用昇降装置138が機械的に連結された構成と同様な動作を示す事を指す。 The main lifting device 137 and the measurement lifting device 138 are configured to exhibit identical dynamic characteristics when moving between two points (extended position, retracted position). For example, identical dynamic characteristics are ensured when moving between two points by position control with feedback, force control using a solenoid coil, gas pressure, or cylinder, or speed control using an electric motor. A typical example of identical dynamic characteristics is when the main lifting device 137 and the measurement lifting device 138 are mechanically linked and exhibit the same operation.

真空槽111の外部には、真空排気装置143とスパッタリングガス源144とスパッタ電源142とが配置されている。 A vacuum exhaust device 143, a sputtering gas source 144, and a sputtering power supply 142 are arranged outside the vacuum chamber 111.

この真空処理装置105によって製造基板の真空処理を行う際には真空排気装置143を動作させると、真空排気装置143は真空槽111の内部を真空排気して真空雰囲気を形成する。 When the vacuum processing device 105 is used to perform vacuum processing on a manufacturing substrate, the vacuum exhaust device 143 is operated, and the vacuum exhaust device 143 evacuates the inside of the vacuum chamber 111 to form a vacuum atmosphere.

昇降ピン148の先端と測定ピン132の先端とは、吸着装置112の内部に位置させた状態(収容位置)で、真空排気装置143によって真空槽111の内部を真空排気しながら真空槽111の内部に製造基板を搬入する。 The tip of the lift pin 148 and the tip of the measurement pin 132 are positioned inside the suction device 112 (storage position), and the manufacturing substrate is carried into the vacuum chamber 111 while the inside of the vacuum chamber 111 is evacuated by the vacuum exhaust device 143.

搬入した製造基板を吸着装置112の表面上に位置させた後、主移動装置137によって各昇降ピン148を上昇させ、突出位置にある昇降ピン148上に製造基板113を乗せた後、各昇降ピン148を降下させ、製造基板の裏面を吸着装置112の表面に接触させると製造基板は吸着装置112上に配置される。図1の符号113は吸着装置112上に配置された製造基板を示している。 After the transported manufacturing substrate is positioned on the surface of the suction device 112, the main moving device 137 raises each lift pin 148, and the manufacturing substrate 113 is placed on the lift pins 148 in the protruding position. The lift pins 148 are then lowered, and the back surface of the manufacturing substrate is brought into contact with the surface of the suction device 112, whereby the manufacturing substrate is placed on the suction device 112. The reference numeral 113 in FIG. 1 indicates the manufacturing substrate placed on the suction device 112.

真空装置111の外部には、制御装置118と電源装置116とが配置されている。 A control device 118 and a power supply device 116 are arranged outside the vacuum device 111.

電源装置116は、第一~第四の吸着電極121~124に電気的に接続されている。また、電源装置116は制御装置118に接続されている。電源装置116には制御装置118が出力する制御信号が入力され、電源装置116は制御装置118によって制御される。 The power supply device 116 is electrically connected to the first to fourth chucking electrodes 121 to 124. The power supply device 116 is also connected to the control device 118. A control signal output by the control device 118 is input to the power supply device 116, and the power supply device 116 is controlled by the control device 118.

製造基板113が吸着装置112上に吸着装置112に接触して配置されると、電源装置116は、第一の吸着電極121と第三の吸着電極123とに同極性で同じ大きさの電圧を印加し、第二の吸着電極122と第四の吸着電極124とに同極性で同じ大きさの電圧を印加する。 When the manufacturing substrate 113 is placed on the suction device 112 in contact with the suction device 112, the power supply device 116 applies voltages of the same polarity and magnitude to the first suction electrode 121 and the third suction electrode 123, and applies voltages of the same polarity and magnitude to the second suction electrode 122 and the fourth suction electrode 124.

真空槽111は接地電位に接続されており、ここでは、第一、第三の吸着電極121、123と第二、第四の吸着電極122、124との間には互いに逆極性の電圧が印加される。 The vacuum chamber 111 is connected to ground potential, and voltages of opposite polarity are applied between the first and third chucking electrodes 121, 123 and the second and fourth chucking electrodes 122, 124.

例えば、第一、第三の吸着電極121、123に正電圧が印加されるときには第二、第四の吸着電極122、124には負電圧が印加され、第一、第三の吸着電極121、123に負電圧が印加されるときには第二、第四の吸着電極122、124には正電圧が印加される。 For example, when a positive voltage is applied to the first and third chucking electrodes 121, 123, a negative voltage is applied to the second and fourth chucking electrodes 122, 124, and when a negative voltage is applied to the first and third chucking electrodes 121, 123, a positive voltage is applied to the second and fourth chucking electrodes 122, 124.

第一、第三の吸着電極121、123の組を第一種類の電極とし、第二、第四の吸着電極122、124の組を第二種類の電極とすると、第一種類の電極と第二種類の電極とは、一定距離だけ離間して配置され、第一、第二種類の電極は、主測定電極125と副測定電極126とから離間されている。符号108は第一種類の電極を示し、符号109は第二種類の電極を示している。 If the set of the first and third suction electrodes 121, 123 is a first type of electrode, and the set of the second and fourth suction electrodes 122, 124 is a second type of electrode, the first type of electrodes and the second type of electrodes are arranged at a fixed distance apart, and the first and second types of electrodes are separated from the main measurement electrode 125 and the secondary measurement electrode 126. Reference numeral 108 denotes the first type of electrode, and reference numeral 109 denotes the second type of electrode.

ここで、第一種類の電極108と第二種類の電極109とによって吸着すべき製造基板113には導電性薄膜が形成されているものとする。導電性薄膜は、吸着装置112上に配置された製造基板113に形成する場合も含まれる。 Here, it is assumed that a conductive thin film is formed on the manufacturing substrate 113 to be attracted by the first type of electrode 108 and the second type of electrode 109. This also includes the case where the conductive thin film is formed on the manufacturing substrate 113 placed on the attraction device 112.

第一種類の電極108と製造基板113の導電性薄膜との間と、第二種類の電極109と製造基板113の導電性薄膜との間と、主測定電極125と製造基板113の導電性薄膜との間と、副測定電極126と製造基板113の導電性薄膜との間とには、コンデンサが形成される。第一種類の電極108と導電性薄膜との間に形成されたコンデンサを第一コンデンサとし、第二種類の電極109と導電性薄膜との間に形成されたコンデンサを第二コンデンサとすると、第一種類の電極108と第二種類の電極109とは、第一コンデンサと第二コンデンサとの直列接続回路によって電気的に接続される。 Capacitors are formed between the first type of electrode 108 and the conductive thin film of the manufacturing substrate 113, between the second type of electrode 109 and the conductive thin film of the manufacturing substrate 113, between the main measurement electrode 125 and the conductive thin film of the manufacturing substrate 113, and between the secondary measurement electrode 126 and the conductive thin film of the manufacturing substrate 113. If the capacitor formed between the first type of electrode 108 and the conductive thin film is the first capacitor, and the capacitor formed between the second type of electrode 109 and the conductive thin film is the second capacitor, the first type of electrode 108 and the second type of electrode 109 are electrically connected by a series connection circuit of the first capacitor and the second capacitor.

主測定電極125と製造基板113の導電性薄膜との間に形成されるコンデンサを主測定コンデンサとし、副測定電極126と製造基板113の導電性薄膜との間に形成されるコンデンサを副測定コンデンサとすると、主測定電極125と第二種類の電極109との間は、主測定コンデンサと第二コンデンサの直列接続回路によって接続され、副測定電極126と第二種類の電極109との間は、副測定コンデンサと第二コンデンサの直列接続回路によって接続される。 If the capacitor formed between the main measurement electrode 125 and the conductive thin film of the manufacturing substrate 113 is the main measurement capacitor, and the capacitor formed between the secondary measurement electrode 126 and the conductive thin film of the manufacturing substrate 113 is the secondary measurement capacitor, the main measurement electrode 125 and the second type of electrode 109 are connected by a series connection circuit of the main measurement capacitor and the second capacitor, and the secondary measurement electrode 126 and the second type of electrode 109 are connected by a series connection circuit of the secondary measurement capacitor and the second capacitor.

電源装置116によって第一種類の電極108と第二種類の電極109とに電圧が印加される際には、主測定電極125と副測定電極126とには、第一種類の電極108と同極性で同じ大きさの電圧が印加される。 When the power supply unit 116 applies a voltage to the first type of electrode 108 and the second type of electrode 109, a voltage of the same polarity and magnitude as that of the first type of electrode 108 is applied to the main measurement electrode 125 and the secondary measurement electrode 126.

第一種類の電極108と第二種類の電極109との間の電圧を吸着電圧とすると、主測定電極125と第二種類の電極109との間と、副測定電極126と第二種類の電極109との間の電圧の大きさも吸着電圧の大きさと等しくなる。 If the voltage between the first type of electrode 108 and the second type of electrode 109 is the adsorption voltage, the magnitude of the voltage between the main measurement electrode 125 and the second type of electrode 109 and between the secondary measurement electrode 126 and the second type of electrode 109 will also be equal to the adsorption voltage.

その結果、第一種類の電極108と第二種類の電極109との間に吸着電圧が印加されると、第一コンデンサと第二コンデンサの直列接続回路と、主測定コンデンサと第二コンデンサの直列接続回路と、副測定コンデンサと第二コンデンサの直列接続回路とは、それぞれ吸着電圧によって充電される。 As a result, when an attraction voltage is applied between the first type of electrode 108 and the second type of electrode 109, the series connection circuit of the first capacitor and the second capacitor, the series connection circuit of the main measurement capacitor and the second capacitor, and the series connection circuit of the secondary measurement capacitor and the second capacitor are each charged by the attraction voltage.

制御装置118には記憶装置119が設けられており、記憶装置119には吸着電圧の極性と大きさとが記憶されており、第一種類の電極108と第二種類の電極109との間には、記憶装置119に記憶された極性と大きさの吸着電圧が印加され、第一、第二種類の電極108、109と製造基板113との間には静電気力又はグラディエント力が発生し、製造基板113は吸着装置112に吸着される。 The control device 118 is provided with a memory device 119, which stores the polarity and magnitude of the adsorption voltage. An adsorption voltage of the polarity and magnitude stored in the memory device 119 is applied between the first type of electrode 108 and the second type of electrode 109, and an electrostatic force or gradient force is generated between the first and second types of electrodes 108, 109 and the manufacturing substrate 113, and the manufacturing substrate 113 is adsorbed to the adsorption device 112.

製造基板113が吸着装置112に吸着された状態では、製造基板113と吸着装置112との間の熱抵抗は吸着前の状態よりも小さくなっており、吸着装置112の内部に配置されたヒータや冷却装置によって製造基板113の温度が制御しやすい状態になる。 When the manufacturing substrate 113 is adsorbed to the adsorption device 112, the thermal resistance between the manufacturing substrate 113 and the adsorption device 112 is smaller than the state before adsorption, and the temperature of the manufacturing substrate 113 can be easily controlled by the heater and cooling device arranged inside the adsorption device 112.

スパッタリングターゲット141は、カソード電極140に取り付けられ、カソード電極140はスパッタ電源142に接続されており、スパッタリングガス源144によって真空雰囲気中にスパッタリングガスを導入し、制御装置118が製造基板113の温度を制御しながら、スパッタ電源142を動作させてカソード電極140にスパッタ電圧を印加すると、スパッタリングターゲット141がスパッタリングされ、製造基板113の表面への薄膜形成の開始によって製造基板113の真空処理が開始される。 The sputtering target 141 is attached to the cathode electrode 140, which is connected to the sputtering power supply 142. A sputtering gas source 144 introduces a sputtering gas into the vacuum atmosphere. The control device 118 controls the temperature of the production substrate 113, and the sputtering power supply 142 is operated to apply a sputtering voltage to the cathode electrode 140. The sputtering target 141 is sputtered, and the vacuum processing of the production substrate 113 begins as a thin film is formed on the surface of the production substrate 113.

薄膜が所定膜厚に形成されるとスパッタ電圧の印加は終了され、真空処理が終了し、吸着電圧の印加は停止される。 When the thin film is formed to the specified thickness, the application of the sputtering voltage is terminated, the vacuum process is completed, and the application of the adsorption voltage is stopped.

この状態では、各電極108、109、125、126と製造基板113との間には残留電荷が発生している。 In this state, residual charges are generated between each electrode 108, 109, 125, 126 and the production substrate 113.

記憶装置119には、吸着電圧とは逆極性の第一の離間電圧の大きさと印加時間とが記憶されている。 The memory device 119 stores the magnitude and application time of the first separation voltage, which has the opposite polarity to the attraction voltage.

電源装置116は、主測定電極125と副測定電極126とを第一種類の電極108に短絡させた状態で、第一種類の電極108と第二種類の電極109との間に、記憶装置119に記憶された大きさの第一の離間電圧を、記憶装置119に記憶された印加時間の間印加すると、製造基板113と吸着装置112とに蓄積された残留電荷が減少する。 When the power supply device 116 applies a first separation voltage of a magnitude stored in the memory device 119 between the first type of electrode 108 and the second type of electrode 109 for an application time stored in the memory device 119 while the main measurement electrode 125 and the secondary measurement electrode 126 are shorted to the first type of electrode 108, the residual charge accumulated in the production substrate 113 and the suction device 112 is reduced.

測定用昇降装置138と測定用ベローズ131と測定ピン132とで、部分離間装置130が構成されているものとすると、部分離間装置130は制御装置118によって制御されている。 Assuming that the measurement lifting device 138, the measurement bellows 131, and the measurement pin 132 constitute the part separation device 130, the part separation device 130 is controlled by the control device 118.

制御装置118は、電源装置116によって、第一の離間電圧を印加した後第一種類の電極108と第二種類の電極109と主測定電極125と副測定電極126とを接地電位に接続し、次いで、部分離間装置130を動作させ、吸着装置112の内部(収容位置)に位置する測定ピン132を上昇させると、突出位置に到達する過程にて、測定ピン132の先端が製造基板113の裏面に接触する。 The control device 118 applies a first separation voltage using the power supply device 116, then connects the first type of electrode 108, the second type of electrode 109, the main measurement electrode 125, and the secondary measurement electrode 126 to ground potential, and then operates the partial separation device 130 to raise the measurement pin 132 located inside the suction device 112 (storage position). In the process of reaching the protruding position, the tip of the measurement pin 132 comes into contact with the rear surface of the manufacturing substrate 113.

吸着装置112に吸着された製造基板113のうち、主測定電極125と対面する部分を主対面部分とし、副測定電極126と対面する部分を副対面部分とすると、主測定電極125は、主対面部分が吸着装置112に吸着された製造基板113の縁付近に位置するように配置されている。 When the portion of the manufacturing substrate 113 adsorbed to the suction device 112 that faces the main measurement electrode 125 is defined as the main facing portion, and the portion that faces the secondary measurement electrode 126 is defined as the secondary facing portion, the main measurement electrode 125 is positioned so that the main facing portion is located near the edge of the manufacturing substrate 113 adsorbed to the suction device 112.

また、吸着装置112に吸着された製造基板113のうち、測定ピン132の先端が接触する部分を接触部分とすると、測定ピン132は、接触部分が、主対面部分よりも製造基板113の縁に近い位置であって、製造基板113の縁と主対面部分との間に位置する場所に配置されている。 In addition, if the portion of the manufacturing substrate 113 adsorbed to the adsorption device 112 that the tip of the measuring pin 132 comes into contact with is defined as the contact portion, the measuring pin 132 is positioned such that the contact portion is closer to the edge of the manufacturing substrate 113 than the main facing portion, and is located between the edge of the manufacturing substrate 113 and the main facing portion.

また、副測定電極126は、副対面部分が、吸着装置112に吸着された製造基板113の縁から主対面部分よりも遠くなる場所に配置されており、従って、副測定電極126は、装置本体129の縁から主測定電極125よりも遠い場所に位置している。 The secondary measurement electrode 126 is also positioned such that the secondary facing portion is farther from the edge of the manufacturing substrate 113 adsorbed to the adsorption device 112 than the primary facing portion, and therefore the secondary measurement electrode 126 is located farther from the edge of the device body 129 than the primary measurement electrode 125.

この例では、副測定電極126は、副対面部分が接触部分と主対面部分とを結んだ直線上に位置するように配置されており、特に、副測定電極126を、副対面部分が接触部分の中心と主対面部分の中心とを結ぶ直線上に位置するように配置するとよい。 In this example, the secondary measurement electrode 126 is positioned so that the secondary facing portion is located on a straight line connecting the contact portion and the main facing portion, and in particular, it is preferable to position the secondary measurement electrode 126 so that the secondary facing portion is located on a straight line connecting the center of the contact portion and the center of the main facing portion.

第一、第二種類の電極108、109の間に第一の離間電圧を印加した後も残留電荷は残っており、測定ピン132が接触部分に接触した後、更に測定ピン132の先端を吸着装置112から突き出る方向に移動させると、残留電荷による抗力が突出移動力に対して動特性に影響を与えるが、突出移動力は抗力に対して大きく設定される事から、製造基板113のうち、先ず、接触部分の近傍の部分が吸着装置112から離間する。つまり当該近傍部分の残留電荷に起因する抗力が動特性に影響を与える。 Even after the first separation voltage is applied between the first and second types of electrodes 108, 109, residual charge remains, and after the measuring pin 132 comes into contact with the contact portion, when the tip of the measuring pin 132 is further moved in a direction protruding from the suction device 112, the resistance due to the residual charge affects the dynamic characteristics with respect to the protruding movement force, but since the protruding movement force is set to be large relative to the resistance, the portion of the manufacturing substrate 113 near the contact portion first separates from the suction device 112. In other words, the resistance due to the residual charge in that nearby portion affects the dynamic characteristics.

そして、測定ピン132の先端の吸着装置112から突き出される量が大きくなると、製造基板113の吸着装置112から離間した部分の面積が拡大する。 When the tip of the measurement pin 132 protrudes from the suction device 112 by a larger amount, the area of the portion of the manufacturing substrate 113 that is separated from the suction device 112 increases.

つまり近傍部分から徐々に同心円状に離間した部分の残留電荷に起因する抗力(同心円状に離間した境界以降の接触領域にて生じる抗力)が製造基板113の曲げ剛性(断面二次モーメントおよび製造基盤のヤング率による)を介して測定ピン132の動特性(後述する基準となる動特性)に支配的な影響を与える。 In other words, the resistance caused by the residual charge in the area gradually separated from the nearby area in a concentric circle (the resistance generated in the contact area beyond the boundary of the concentric circle) exerts a dominant effect on the dynamic characteristics of the measurement pin 132 (the reference dynamic characteristics described later) through the bending rigidity of the manufacturing substrate 113 (due to the second moment of area and Young's modulus of the manufacturing substrate).

製造基板113のうち、吸着装置112から離間した部分と吸着装置112との間の接触が維持されている部分との間の境界は、当初は傘状に広がるが、測定ピン132の先端の吸着装置112から突き出される量を多くすると最終的には接触部分の近傍位置から製造基板113の中心方向に向けて移動する。 The boundary between the portion of the manufacturing substrate 113 that is separated from the suction device 112 and the portion that maintains contact with the suction device 112 initially expands like an umbrella, but as the amount that the tip of the measurement pin 132 protrudes from the suction device 112 increases, it eventually moves from a position near the contact portion toward the center of the manufacturing substrate 113.

そして境界が主測定電極125上を通過すると、製造基板113の導電性薄膜と主測定電極125との間の距離が増大し、図3に示すように主対面部分が吸着装置112から離間すると、主測定コンデンサの容量値がゼロに近い値に減少する。 When the boundary passes over the main measurement electrode 125, the distance between the conductive thin film of the manufacturing substrate 113 and the main measurement electrode 125 increases, and when the main facing portion moves away from the suction device 112 as shown in Figure 3, the capacitance value of the main measurement capacitor decreases to a value close to zero.

また、境界が主測定電極125上を通過した後、副測定電極126上も通過し、図4に示すように副対面部分が吸着装置112から離間すると、副測定コンデンサの容量値がゼロに近い値に減少する。 In addition, after the boundary passes over the primary measurement electrode 125, it also passes over the secondary measurement electrode 126, and when the secondary facing portion separates from the suction device 112 as shown in FIG. 4, the capacitance value of the secondary measurement capacitor decreases to a value close to zero.

他方、境界が主測定電極125上、及び副測定電極126上を通過する際には、製造基板113のうち、第二種類の電極109と対面する部分は吸着装置112との間の接触を維持しており、第二コンデンサの容量値に変化が無い。 On the other hand, when the boundary passes over the primary measurement electrode 125 and the secondary measurement electrode 126, the portion of the manufacturing substrate 113 that faces the second type of electrode 109 maintains contact with the suction device 112, and there is no change in the capacitance value of the second capacitor.

従って、境界が主測定電極125上を通過する間に、主測定コンデンサに蓄積された電荷による放電が発生し、放電によって主測定電極125を通る主測定電流が流れる。第二コンデンサにも、同じ大きさで同じ向きの電流が流れる。 Therefore, while the boundary passes over the main measurement electrode 125, a discharge occurs due to the charge stored in the main measurement capacitor, and the discharge causes a main measurement current to flow through the main measurement electrode 125. A current of the same magnitude and in the same direction also flows in the second capacitor.

また、境界が副測定電極126上を通過する間に、副測定コンデンサに蓄積された電荷による放電が発生し、放電によって副測定電極126を通る副測定電流が流れる。第二コンデンサにも、同じ大きさで同じ向きの電流が流れる。 In addition, while the boundary passes over the secondary measurement electrode 126, a discharge occurs due to the charge stored in the secondary measurement capacitor, and the discharge causes a secondary measurement current to flow through the secondary measurement electrode 126. A current of the same magnitude and in the same direction also flows in the second capacitor.

主測定電極125と副測定電極126とは、電流測定装置115を介して、電源装置116に接続されており、主測定電流の向きと値と流れた時間と、副測定電極126を流れる電流である副測定電流の向きと値と流れた時間とをそれぞれ測定できるようにされている。 The main measurement electrode 125 and the secondary measurement electrode 126 are connected to the power supply unit 116 via the current measuring device 115, and are capable of measuring the direction, value, and flow time of the main measurement current, and the direction, value, and flow time of the secondary measurement current, which is the current flowing through the secondary measurement electrode 126.

つまり主測定電流と副測定電流の向きと値と流れた時間、各値の相関関係について、基準となる相関関係から測定した現在の各値を比較し、基準からの逸脱状況を確認する事で、動特性の変化、すなわち残留電荷の状況が測定できる。 In other words, by comparing the current measured values with the standard correlation for the direction, value, and time of flow of the main measurement current and secondary measurement current, as well as the correlation between each value, and checking for deviations from the standard, the change in dynamic characteristics, i.e., the state of residual charge, can be measured.

電流測定装置115によって測定された主測定電流の向きと大きさと、副測定電流の向きと大きさは、測定結果として電流測定装置115から制御装置118に出力され、測定結果や相関関係の比較等は、制御装置118に接続された表示装置147に表示される。 The direction and magnitude of the main measurement current and the direction and magnitude of the secondary measurement current measured by the current measuring device 115 are output from the current measuring device 115 to the control device 118 as measurement results, and the measurement results, correlation comparisons, etc. are displayed on the display device 147 connected to the control device 118.

第一コンデンサと第二コンデンサと主測定コンデンサと副測定コンデンサとの容量値は予め測定され、記憶装置119に記憶されており、制御装置118は、主測定コンデンサに蓄積された電荷の大きさを算出し、その電荷の極性と大きさとから、製造基板113と吸着装置112とに蓄積された残留電荷の極性と大きさを算出して表示装置147に表示することもできる。 The capacitance values of the first capacitor, the second capacitor, the main measurement capacitor, and the secondary measurement capacitor are measured in advance and stored in the memory device 119. The control device 118 calculates the magnitude of the charge accumulated in the main measurement capacitor, and from the polarity and magnitude of that charge, it can also calculate the polarity and magnitude of the residual charge accumulated in the production substrate 113 and the suction device 112 and display them on the display device 147.

表示装置147に表示された測定結果に基づいて、残留電荷を減少させる電圧の極性と大きさと印加時間を決定し、測定ピン132を測定孔135の内部に収容すると共に、主測定電極125と副測定電極126とを第一種類の電極108と第二種類の電極109とから絶縁させた状態で、決定した極性と大きさの第二の離間電圧を決定した印加時間の間、第一、第二種類の電極108、109の間に印加し、残留電荷を減少させる。 Based on the measurement results displayed on the display device 147, the polarity, magnitude, and application time of the voltage to reduce the residual charge are determined, and the measurement pin 132 is housed inside the measurement hole 135, and with the main measurement electrode 125 and the secondary measurement electrode 126 insulated from the first type of electrode 108 and the second type of electrode 109, a second separation voltage of the determined polarity and magnitude is applied between the first and second types of electrodes 108, 109 for the determined application time, thereby reducing the residual charge.

なお測定結果に基づいた第二の離間電圧は、仮に測定結果が基準となる相関関係と同一となった場合、当然、電圧の極性と大きさと印加時間はゼロとなる。これは生産効率の面から見て理想的な結果である。なぜならば、第一の離間電圧によって十分に残留電荷が減少されている為、制御装置118により部分離間装置130を利用する測定工程および第二の離間電圧の印加工程を省略出来、工程短縮となるからである。 If the measurement results are identical to the reference correlation, the second separation voltage based on the measurement results will naturally have a voltage polarity, magnitude, and application time of zero. This is an ideal result in terms of production efficiency. This is because the residual charge has been sufficiently reduced by the first separation voltage, so the measurement process using the part separation device 130 and the application process of the second separation voltage can be omitted by the control device 118, thereby shortening the process.

つまり制御装置118は、次の製造基板113に印加する第一の離間電圧を、第二の離間電圧を加減算した電圧、あるいは第二の離間電圧に一定の係数を乗じた値を加減算した電圧(別手法として、予備測定にて第1と第2の離間電圧との関係をプロットしたグラフを用い、この各点について補間できる関数を導出し、この関数を用いても良い)へと変更するのが好ましい。 In other words, it is preferable for the control device 118 to change the first separation voltage to be applied to the next manufacturing substrate 113 to a voltage obtained by adding or subtracting the second separation voltage, or a voltage obtained by adding or subtracting a value obtained by multiplying the second separation voltage by a certain coefficient (as an alternative method, a graph is used in which the relationship between the first and second separation voltages is plotted in a preliminary measurement, and a function that can be used to interpolate between the points is derived and this function is used).

第二の離間電圧の印加により、製造基板113と吸着装置112とに蓄積された残留電荷は減少されており、昇降孔145の内部から昇降ピン148を上昇させ、昇降ピン148上に製造基板113を乗せて製造基板113を吸着装置112から離間させると、薄膜が形成された製造基板113を他の真空処理装置に移動させることができる。 By applying the second separation voltage, the residual charge accumulated on the production substrate 113 and the suction device 112 is reduced, and the lift pins 148 are raised from inside the lift hole 145, the production substrate 113 is placed on the lift pins 148, and the production substrate 113 is separated from the suction device 112, and the production substrate 113 on which the thin film has been formed can be moved to another vacuum processing device.

また別実施例として下記の手法を用い、工程短縮を行っても良い。 As another example, the following method can be used to shorten the process.

工程1. 上述したように製造基板113を吸着しながら真空処理を行い、第一、第二種類の電極108、109の間に第一の離間電圧を印加した後、測定ピン132の先端を吸着装置112から突き出る方向に移動させ、接触部分の近傍の部分の吸着装置112からの離間を開始させる。 Step 1. As described above, a vacuum process is performed while the manufacturing substrate 113 is being adsorbed, and a first separation voltage is applied between the first and second types of electrodes 108, 109. Then, the tip of the measurement pin 132 is moved in a direction protruding from the adsorption device 112, and the portion near the contact portion begins to separate from the adsorption device 112.

工程2. 吸着装置112から離間した部分と吸着装置112との間の接触が維持されている部分との間の境界が主測定電極125に到達する。到達および次工程(工程3)との区別は、予め定めた主測定電極125に接続された電流測定装置115に流れる電流値(トリガー電流値)とする。この電流値は、電流測定装置115が動作を開始する電流計動作開始トリガーとして機能する。この電流値を下回る場合は残留電荷が第一の離間電圧によって十分に減少されている事に相当する事を意味する(つまり第二の離間電圧を印加する必要がない)ので、第二の離間電圧を印加する動作開始は成されず、以降の工程は実施されない。なお、トリガー電流値を超えたという事は、第一の離間電圧を印加しても残留電荷が予め定めた値以上であるので、例えば製造基板113の厚みが、第一の離間電圧を設定した時点での想定とは異なる事を意味する。 Step 2. The boundary between the part separated from the suction device 112 and the part where contact between the suction device 112 is maintained reaches the main measurement electrode 125. The distinction between the arrival and the next step (step 3) is made by the current value (trigger current value) flowing through the current measurement device 115 connected to the predetermined main measurement electrode 125. This current value functions as an ammeter operation start trigger that starts the current measurement device 115. If the current value is below this value, it means that the residual charge has been sufficiently reduced by the first separation voltage (i.e., there is no need to apply the second separation voltage), so the operation of applying the second separation voltage is not started and the subsequent steps are not performed. Note that exceeding the trigger current value means that even if the first separation voltage is applied, the residual charge is equal to or greater than the predetermined value, so for example, the thickness of the manufacturing substrate 113 is different from the assumption at the time the first separation voltage was set.

工程3.主測定電極125上の境界の移動に応じた電流が、電流測定装置115にて検出される。(検出される電流は、電極の形状、境界の移動状況、製造基板113の断面二次モーメントを反映する。つまり信号/雑音の比の面から見た場合、接触面積の減少速度と同一とする電極形状、および製造基板113が測定ピン132により容易に変形する箇所に電極を設ける事が望ましい。この様にする事で、第二の離間電圧の必要性が、より正確に把握できる。後述する副測定電極126についても同様である。)
工程4. そして境界が主測定電極125上を通過して主測定電極125の外部に位置した事は、電流測定装置115に流れる電流の大きさがトリガー電流値以下である事で把握される。
Step 3. The current corresponding to the movement of the boundary on the primary measurement electrode 125 is detected by the current measuring device 115. (The detected current reflects the shape of the electrode, the movement of the boundary, and the second moment of area of the manufactured substrate 113. In other words, from the viewpoint of the signal/noise ratio, it is desirable to have an electrode shape that is the same as the speed of reduction of the contact area, and to provide the electrode at a location where the manufactured substrate 113 is easily deformed by the measurement pin 132. In this way, the necessity for the second separation voltage can be grasped more accurately. The same applies to the secondary measurement electrode 126 described later.)
Step 4. The fact that the boundary has passed over the main measurement electrode 125 and is located outside the main measurement electrode 125 is detected by the magnitude of the current flowing through the current measuring device 115 being equal to or less than the trigger current value.

工程5. 境界が移動する事で、上記工程2~4について同様の測定が各副測定電極126に対して行われる。 Step 5. As the boundary moves, similar measurements are performed on each secondary measurement electrode 126 in steps 2 to 4 above.

なお、境界は主測定電極125と副測定電極126上に同時に存在できない様に構成する事で、主測定電極125と副測定電極126それぞれから由来する信号の時間間隔を保つ事が出来、工程6における時間間隔を長く出来る事となるので、信号/雑音の比の面から見て好ましい。 In addition, by configuring the boundary so that it cannot exist simultaneously on the main measurement electrode 125 and the secondary measurement electrode 126, the time interval between the signals originating from the main measurement electrode 125 and the secondary measurement electrode 126 can be maintained, and the time interval in step 6 can be lengthened, which is preferable in terms of the signal/noise ratio.

境界の移動は動特性が同一であれば残留電荷と曲げ剛性に支配されて進むので、円形基盤であれば円周側が先行して離脱し中心側は離脱が遅れる傾向となる、よって境界が副測定電極126上を移動するときの電流測定の感度を上昇させるためには副測定電極126は円周側面積が中心側面積より多くなる形状(例えば扇形や三角形、ドーナッツカット形状)が好ましいと言える。(ただし測定ピンを中心とした傘状に境界が広がる微小領域内に主測定電極および副測定電極を設ける構成の場合は、測定ピン側の面積が多くなる形状を採用するのが好ましい。)
その意味で、副測定電極126は、製造基板が四角形状の場合は測定ピン132より角に近い場所に位置することが望ましく、円形基板の場合は測定ピン132より円周に近い場所に位置することが望ましい。
If the dynamic characteristics are the same, the movement of the boundary is governed by the residual charge and bending rigidity, so in the case of a circular base, the circumferential side tends to separate first and the central side tends to separate later, so in order to increase the sensitivity of the current measurement when the boundary moves on the secondary measurement electrode 126, it can be said that it is preferable for the secondary measurement electrode 126 to have a shape in which the area on the circumferential side is larger than the area on the central side (for example, a sector, triangle, or doughnut cut shape). (However, in a configuration in which the primary measurement electrode and secondary measurement electrode are provided in a minute region in which the boundary spreads out like an umbrella centered on the measurement pin, it is preferable to adopt a shape in which the area on the measurement pin side is larger.)
In this sense, it is desirable to position the secondary measurement electrode 126 closer to the corner than the measurement pin 132 if the manufactured substrate is rectangular, and it is desirable to position the secondary measurement electrode 126 closer to the circumference than the measurement pin 132 if the manufactured substrate is circular.

工程6. 後述する<予備測定>を行い、これを基準として、主測定電極125と副測定電極126について、
a)主測定電流の開始・終了時間間隔、副測定電流の開始・終了時間間隔
b)ピーク電流間隔(主測定電流と副測定電流のピークの時間間隔)
c)予め設定した電流値超過判定および判定時刻の間隔
等、単数あるいは複数について選択した測定値(以降、これらは評価値と呼ぶ)と比較する。
Step 6. A preliminary measurement is carried out as described below, and based on this, the main measurement electrode 125 and the sub-measurement electrode 126 are measured.
a) Start and end time interval of the main measurement current, and start and end time interval of the secondary measurement current
b) Peak current interval (time interval between the peaks of the primary and secondary measurement currents)
c) Compare with a selected measurement value (hereinafter, these are called evaluation values) for one or more preset current value excess judgments and judgment time intervals, etc.

工程7. 比較した結果として現在の残留電荷を得る。最も単純な比較は、後述する<予備測定>にて異なる2つの残留電荷に対しての基準を取得し、この2つの基準を用いて1次式による補間を行い、この関数を比較として用い、現在の残留電荷を算出する。当然、基準を複数取得し、多項式での補間を行った関数を用いて比較し、残留電荷を求めてもよく、当然複数の評価値を用いて多変数関数として求めても良い。 Step 7. The current residual charge is obtained as a result of the comparison. The simplest comparison involves obtaining standards for two different residual charges in the <preliminary measurement> described below, using these two standards to perform linear interpolation, and using this function for comparison to calculate the current residual charge. Naturally, multiple standards can be obtained and compared using a function that has been interpolated with a polynomial to obtain the residual charge, and naturally multiple evaluation values can be used to obtain the residual charge as a multivariate function.

工程8. 工程7の計算が、測定ピン132が突出位置に向けて動作を継続している条件下でかつ、工程5の副測定電極126上面から境界が離脱し、かつ第一、第二種類の電極108、109迄に境界が到達しない条件の時間内で計算が終了する、として構成されていたとすれば、境界が第一、第二種類の電極108、109に到達する前に第二の離間電圧の印加を行い、残留電荷を十分に減少させる事が可能となる。なお印加時間後に、境界が第一種類の電極108と第二種類の電極109とに到達する動特性とする。この様な動特性とすれば第一種類の電極108および第二種類の電極109に保持された残留電荷が減少した状態(ほぼ消滅した状態)で境界が通過するので、製造基板113を吸着装置112から分離する際に、基板の破損や搬送ズレが生じない。 Step 8. If the calculation in step 7 is configured so that the calculation is completed within the time period when the measurement pin 132 continues to move toward the protruding position, the boundary leaves the upper surface of the secondary measurement electrode 126 in step 5, and the boundary does not reach the first and second types of electrodes 108 and 109, the second separation voltage is applied before the boundary reaches the first and second types of electrodes 108 and 109, making it possible to sufficiently reduce the residual charge. Note that the dynamic characteristics are such that the boundary reaches the first type of electrode 108 and the second type of electrode 109 after the application time. With such dynamic characteristics, the boundary passes with the residual charge held by the first type of electrode 108 and the second type of electrode 109 reduced (almost disappeared), so that the substrate is not damaged or transported out of alignment when the manufacturing substrate 113 is separated from the suction device 112.

工程9. 工程8の終了段階で昇降ピン148が基板裏面に到達するように構成すれば、そのまま昇降ピン148を上昇させ、昇降ピン148上(および測定ピン132上)に製造基板113を乗せて製造基板113を吸着装置112から離間させると、薄膜が形成された製造基板113を他の真空処理装置に移動させることができ、測定工程および除電工程を、一連の基板移動工程に組み込む結果となり、工程増加による遅れ等も生じる事がない。 Step 9. If the lift pins 148 are configured to reach the back surface of the substrate at the end of step 8, the lift pins 148 can be raised and the manufactured substrate 113 placed on the lift pins 148 (and on the measurement pins 132) to separate the manufactured substrate 113 from the suction device 112, allowing the manufactured substrate 113 on which the thin film has been formed to be moved to another vacuum processing device. This results in the measurement step and the charge removal step being incorporated into a series of substrate movement steps, and no delays due to additional steps are incurred.

<予備測定>
ここで、製造基板113の真空処理を開始する前に、種類や構造が異なる試験基板(あるいは製造基板113と同一または厚みが異なる試験基板)を吸着装置112に配置し、主測定電極125と副測定電極126とを第一種類の電極108に電気的に接続した状態で、第一種類の電極108と第二種類の電極109との間に吸着電圧を所定時間印加して試験基板を吸着し、次いで、主測定電極125と副測定電極126とを第一種類の電極108に電気的に接続した状態で、第一種類の電極108と第二種類の電極109との間に、吸着電圧とは逆極性であって記憶装置119に記憶された大きさの第一の離間電圧を、記憶装置119に記憶された印加時間印加し、残留電荷を予備測定における目標値まで減少させる。
<Preliminary measurement>
Here, before starting vacuum processing of the production substrate 113, a test substrate of a different type or structure (or a test substrate that is the same as or has a different thickness as the production substrate 113) is placed in the suction device 112, and with the main measurement electrode 125 and the secondary measurement electrode 126 electrically connected to the first type of electrodes 108, an chucking voltage is applied between the first type of electrodes 108 and the second type of electrodes 109 for a predetermined time to chucking the test substrate, and then, with the main measurement electrode 125 and the secondary measurement electrode 126 electrically connected to the first type of electrodes 108, a first separation voltage of opposite polarity to the chucking voltage and of a magnitude stored in the memory device 119 is applied between the first type of electrodes 108 and the second type of electrodes 109 for the application time stored in the memory device 119, to reduce the residual charge to the target value in the preliminary measurement.

吸着装置112に配置された試験基板を、測定用昇降装置138にて測定ピン132の2点間(突出位置、収容位置)移動を行う事で、第一の離間電圧によって残留電荷が減少された試験基板の主測定電流と副測定電流との向きと大きさとを測定する(この測定の値は評価値に相当する)。この予備測定を行う事で、複数の試験基板に対し、各残留電荷と評価値との関数を導く事が出来る。当然、関数ではなく各値との対比をテーブルとし、これを関数に代えてテーブルに基づく数値処理としても良い。なお残留電荷は測定ピン132の上昇時に印加された力との比例関係があるとして、力(例えば単位をNとする値)を電荷にかえて評価値との対応を行っても良い。他の力の記録例としては空圧式制御であれば媒体の圧力、ソレノイドやモータを利用した制御であれば駆動電流、等を用いることも出来る。 The test board placed on the suction device 112 is moved between two points (projection position, storage position) of the measurement pin 132 by the measurement lifting device 138, and the direction and magnitude of the main measurement current and secondary measurement current of the test board in which the residual charge has been reduced by the first separation voltage are measured (the value of this measurement corresponds to the evaluation value). By performing this preliminary measurement, it is possible to derive a function of each residual charge and the evaluation value for multiple test boards. Naturally, a table can be used to compare each value instead of a function, and this can be replaced with a function and numerical processing based on the table. Note that the residual charge is proportional to the force applied when the measurement pin 132 is raised, and the force (for example, a value in units of N) can be replaced with a charge to correspond to the evaluation value. Other examples of force recording can be the pressure of the medium in the case of pneumatic control, or the drive current in the case of control using a solenoid or motor.

複数の試験基板に対してこのように残留電荷に応じた主測定電流と副測定電流との向きと大きさとを測定した後、再度試験基板を吸着し、前述した各残留電荷(予備測定での各目標値)が試験基板に存在する状態を作り出した上で、主測定電極125と副測定電極126とを第一種類の電極108と第二種類の電極109とから絶縁させた状態で、試験基板毎に異なる大きさ又は異なる印加時間の第二の離間電圧を、残留電荷を減少させる極性で、第一、第二種類の電極108、109の間に印加する。その後、昇降ピン148を上昇させ、昇降ピン148に印加された力を測定しながら、試験基板を吸着装置112から離間させる。当然ながら、第二の離間電圧は基板の破損や搬送ズレが生じない残留電荷量、すなわち主測定電極125に接続された電流測定装置115に流れる電流値が予め定めたトリガー電流値以下になる事が第二の離間電圧の目標となる。この昇降ピン148の上昇と同期して測定ピン132を上昇させても良い。前記した各残留電荷に対し、予め定めたトリガー電流値以下になる第二の離間電圧の相関について関数またはテーブルが確定できれば、測定ピン132の上昇にて残留電荷が特定出来、その後、第二の離間電圧を印加する事で、もしも第一の離間電圧によって十分に残留電荷を減少させる事が出来なかったとしても昇降ピン148の上昇前に第二の離間電圧が印加出来るので、基板の破損や搬送ズレが生じない。 After measuring the direction and magnitude of the main measurement current and the sub-measurement current corresponding to the residual charge for a plurality of test substrates in this manner, the test substrate is again adsorbed, and a state is created in which each of the residual charges described above (each target value in the preliminary measurement) exists on the test substrate. In a state in which the main measurement electrode 125 and the sub-measurement electrode 126 are insulated from the first type electrode 108 and the second type electrode 109, a second separation voltage of a different magnitude or application time for each test substrate is applied between the first and second types of electrodes 108 and 109 with a polarity that reduces the residual charge. Then, the lift pin 148 is raised, and the test substrate is separated from the adsorption device 112 while measuring the force applied to the lift pin 148. Naturally, the second separation voltage is set to a residual charge amount that does not cause damage to the substrate or a conveyance deviation, that is, the current value flowing through the current measuring device 115 connected to the main measurement electrode 125 is equal to or less than a predetermined trigger current value. The measurement pin 132 may be raised in synchronization with the rise of the lift pin 148. If a function or table can be established for the correlation between each of the residual charges described above and the second separation voltage that is equal to or less than a predetermined trigger current value, the residual charge can be identified by raising the measurement pin 132, and then the second separation voltage can be applied. Even if the first separation voltage is not enough to reduce the residual charge, the second separation voltage can be applied before the lift pin 148 rises, so that damage to the substrate or transport deviations do not occur.

ところで種類や構造や厚みが異なる試験基板について、各試験基板に対応する主測定電流等の評価値を取得し、各残留電荷との対応関係を関数またはテーブルとして作製、これを記憶装置119に記憶させておけば、製造基板113が試験基板と同一の種類や構造や厚みではなくとも、測定によって得られた評価値と残留電荷との対応関係を補完する事で、離間させるときの力が小さくなる第二の離間電圧の極性と大きさと印加時間とを求めることができる。 Now, for test substrates of different types, structures, and thicknesses, evaluation values such as the main measurement current corresponding to each test substrate are obtained, and the correspondence with each residual charge is created as a function or table, and this is stored in the memory device 119. Even if the manufactured substrate 113 is not of the same type, structure, or thickness as the test substrate, the correspondence between the evaluation value obtained by measurement and the residual charge can be complemented to determine the polarity, magnitude, and application time of the second separation voltage that reduces the force when separating.

従って、主測定電流の測定結果と電流電圧関係、又は、主測定電流と副測定電流の測定結果と電流電圧関係(つまり、評価値と各残留電荷の関係、および各残留電荷と第二の離間電圧の関係)とから第二の離間電圧の極性と大きさと印加時間を求め、主測定電極125と副測定電極126とを第一種類の電極108と第二種類の電極109とから絶縁させた状態で、第二の離間電圧を電流電圧関係から求めた印加時間の間、製造基板113に印加することで、第二の離間電圧を印加する前よりも、残留電荷を一層小さくすることができる。つまり製造基板113の厚みが第一の離間電圧を設定した時点での想定と異なっていた等の想定外の事象にて不都合な残留電荷が存在していたとしても、測定ピン132の上昇に伴う測定にて第二の離間電圧を印加できる構成であるので、残留電荷を一層小さくすることができ、基板の破損や搬送ズレが生じない。 Therefore, the polarity, magnitude, and application time of the second separation voltage are obtained from the measurement result of the main measurement current and the current-voltage relationship, or the measurement result of the main measurement current and the secondary measurement current and the current-voltage relationship (i.e., the relationship between the evaluation value and each residual charge, and the relationship between each residual charge and the second separation voltage), and the second separation voltage is applied to the manufacturing substrate 113 for the application time obtained from the current-voltage relationship while the main measurement electrode 125 and the secondary measurement electrode 126 are insulated from the first type of electrode 108 and the second type of electrode 109, thereby making it possible to further reduce the residual charge compared to before the second separation voltage was applied. In other words, even if there is an inconvenient residual charge due to an unexpected event such as the thickness of the manufacturing substrate 113 being different from that expected at the time the first separation voltage was set, the second separation voltage can be applied in the measurement accompanying the rise of the measurement pin 132, so that the residual charge can be further reduced and no damage or transport deviation of the substrate occurs.

例えば、主測定電流から求めた第二の離間電圧の極性と大きさと印加時間を用いても良いし、主測定電流から求めた大きさと印加時間と、副測定電流から求めた大きさと印加時間とを平均した第二の離間電圧を用いても良い。極性は主測定電流から求めても良いし副測定電流から求めても良い。 For example, the polarity, magnitude, and application time of the second separation voltage obtained from the main measurement current may be used, or the second separation voltage obtained by averaging the magnitude and application time obtained from the main measurement current and the magnitude and application time obtained from the secondary measurement current may be used. The polarity may be obtained from either the main measurement current or the secondary measurement current.

<他の吸着装置の例>
図5は、本発明に用いることができる他の吸着装置221の電極を説明するための図である。
<Other examples of adsorption devices>
FIG. 5 is a diagram for explaining electrodes of another adsorption device 221 that can be used in the present invention.

吸着装置221は、第一種類電極208と、第二種類電極209と、第三種類電極210とをそれぞれ複数個有している。 The adsorption device 221 has multiple first type electrodes 208, multiple second type electrodes 209, and multiple third type electrodes 210.

この吸着装置221では、第三種類電極210はそれぞれ櫛歯形形状の正電極236と負電極237とが二個噛み合った一組の電極であり、第一、第二種類電極208、209は四角リング形形状であるが、第一、第二種類電極208、209の形状は四角リング形形状に限定されるものではなく、多角形形状にしてもよい。 In this suction device 221, the third type electrode 210 is a set of electrodes each consisting of two interdigitated positive electrodes 236 and two interdigitated negative electrodes 237, and the first and second type electrodes 208 and 209 are rectangular ring shaped, but the shapes of the first and second type electrodes 208 and 209 are not limited to rectangular ring shapes and may be polygonal.

第一種類電極208と、第二種類電極209と、第三種類電極210とは、同一種類の電極が隣接しないように配置されている。 The first type electrodes 208, the second type electrodes 209, and the third type electrodes 210 are arranged such that electrodes of the same type are not adjacent to each other.

この吸着装置221は、水平にされた状態で製造基板が吸着装置221上に配置され、正電極236と負電極237との間に高電圧が印加され、発生したグラディエント力によって絶縁性の製造基板が吸着された後、吸着装置221と、吸着装置221に吸着された製造基板とは、回転されて略鉛直な状態にされる。 The manufacturing substrate is placed on the suction device 221 in a horizontal position, a high voltage is applied between the positive electrode 236 and the negative electrode 237, and the insulating manufacturing substrate is adsorbed by the generated gradient force. After that, the suction device 221 and the manufacturing substrate adsorbed to the suction device 221 are rotated to be in a substantially vertical position.

正電極236と負電極237とによって吸着装置221に吸着された状態で、製造基板の表面に導電性薄膜が形成されると、正負電極236、237の間に印加する高電圧を停止すると共に、第一、第二種類の電極208、209間に吸着電極の印加を開始し、製造基板を静電気力で吸着して真空処理を行う。 When a conductive thin film is formed on the surface of the manufacturing substrate while it is being attracted to the suction device 221 by the positive electrode 236 and the negative electrode 237, the high voltage applied between the positive and negative electrodes 236 and 237 is stopped, and the application of the suction voltage between the first and second types of electrodes 208 and 209 is started, and the manufacturing substrate is attracted by electrostatic force to perform vacuum processing.

真空処理後、吸着装置221と、吸着装置221に吸着された製造基板とを回転させて水平にする。 After the vacuum process, the suction device 221 and the manufacturing substrate adsorbed to the suction device 221 are rotated to make them horizontal.

ここで、吸着装置221は四角形形状であるが、四角形形状に限定されるものではなく、多角形形状や円形形状も含まれる。多角形形状の場合は、少なくとも一個の角には第一、第二種類電極208、209は形成されておらず、その角の部分には、主測定電極225と、第一の副測定電極226と、第二の副測定電極227とが配置されている。 Here, the suction device 221 has a rectangular shape, but is not limited to a rectangular shape and can also be a polygonal or circular shape. In the case of a polygonal shape, the first and second type electrodes 208, 209 are not formed at at least one corner, and the main measurement electrode 225, the first secondary measurement electrode 226, and the second secondary measurement electrode 227 are arranged at that corner.

また、その角の部分には、測定孔235が設けられ、測定孔235の内部には測定ピン232が配置されている。 In addition, a measurement hole 235 is provided at the corner, and a measurement pin 232 is placed inside the measurement hole 235.

吸着装置221に吸着された製造基板のうち、第一の副測定電極226と対面する部分を第一の副対面部分とし、第二の副測定電極227と対面する部分を第二の副対面部分とすると、主測定電極225が対面する主対面部分が、吸着装置221に吸着された製造基板の縁に近い場所に位置するように主測定電極225が配置され、主対面部分よりも縁から遠い場所に第一の副対面部分が配置され、第一の副対面部分よりも縁から遠い場所に第二の副対面部分が配置されるように、第一、第二の副測定電極226、227が配置されている。 If the portion of the manufacturing substrate adsorbed to the suction device 221 facing the first secondary measurement electrode 226 is defined as the first secondary facing portion, and the portion facing the second secondary measurement electrode 227 is defined as the second secondary facing portion, the main measurement electrode 225 is positioned so that the main facing portion facing the main measurement electrode 225 is located near the edge of the manufacturing substrate adsorbed to the suction device 221, the first secondary facing portion is positioned farther from the edge than the main facing portion, and the first and second secondary measurement electrodes 226, 227 are positioned so that the second secondary facing portion is positioned farther from the edge than the first secondary facing portion.

第一、第二種類の電極208、209間に第一の離間電圧を印加した後、部分分離装置によって測定ピン232を移動させ、主対面部分を吸着装置221から離間させて主測定電流の向きと大きさとを測定し、更に測定ピン232を移動させ、主対面部分を離間させた後、第一の副対面部分と吸着装置221との離間を開始させ、第一の副対面部分が吸着装置221と離間して第一の副測定電極226に流れる第一の副測定電流の向きと大きさとを測定し、第一の副対面部分を離間させた後、第二の副対面部分と吸着装置221との離間を開始させ、第二の副対面部分が吸着装置221と離間して第二の副測定電極227に流れる第二の副測定電流の向きと大きさとを測定する。 After applying a first separation voltage between the first and second types of electrodes 208, 209, the measuring pin 232 is moved by the partial separation device to separate the main facing portion from the suction device 221 and measure the direction and magnitude of the main measurement current, the measuring pin 232 is further moved to separate the main facing portion, and then the first sub facing portion starts to separate from the suction device 221, the first sub facing portion separates from the suction device 221 and the direction and magnitude of the first sub measurement current flowing to the first sub measurement electrode 226 is measured, and after the first sub facing portion is separated, the second sub facing portion starts to separate from the suction device 221, and the second sub facing portion separates from the suction device 221 and the direction and magnitude of the second sub measurement current flowing to the second sub measurement electrode 227 is measured.

記憶装置には、残留電荷を大きく減少させる第二の離間電圧の極性と大きさと印加時間が、主測定電流の向きと大きさと、第一の副測定電流の向きと大きさと、第二の副測定電流の向きと大きさとに対応付けられた電流電圧関係が記憶されており、例えば、測定した主測定電流の向きと大きさとを電流電圧関係に照合して対応付けから求められた大きさと印加時間と、測定した第一の副測定電流の向きと大きさとを電流電圧関係に照合して対応付けから求められた大きさと印加時間と、測定した第二の副測定電流の向きと大きさとを電流電圧関係に照合して求められた大きさと印加時間とを平均した第二の離間電圧を印加すると、一層正確に残留電荷を減少させることができる。第二の離間電圧の極性は、主測定電流の向きと第一の副測定電流の向きと、第二の副測定電流の向きのいずれの向きから求めてもよい。 The storage device stores a current-voltage relationship in which the polarity, magnitude, and application time of the second separation voltage that significantly reduces the residual charge are associated with the direction and magnitude of the main measurement current, the direction and magnitude of the first sub-measurement current, and the direction and magnitude of the second sub-measurement current. For example, the residual charge can be reduced more accurately by applying a second separation voltage that is an average of the magnitude and application time obtained by matching the direction and magnitude of the measured main measurement current to the current-voltage relationship, the magnitude and application time obtained by matching the direction and magnitude of the measured first sub-measurement current to the current-voltage relationship, and the magnitude and application time obtained by matching the direction and magnitude of the measured second sub-measurement current to the current-voltage relationship. The polarity of the second separation voltage may be obtained from either the direction of the main measurement current, the direction of the first sub-measurement current, or the direction of the second sub-measurement current.

第二の離間電圧の印加後、昇降孔245の内部に配置された昇降ピン248を上昇させ、真空処理を行った製造基板を吸着装置221から離間させ、他の真空処理装置に移動させる。 After the second separation voltage is applied, the lift pin 248 arranged inside the lift hole 245 is raised, and the manufacturing substrate that has been subjected to vacuum processing is separated from the suction device 221 and moved to another vacuum processing device.

なお、この吸着装置221では、吸着装置221の四隅に主測定電極225と、第一の副測定電極226と、第二の副測定電極227とが設けられており、複数の角の場所で主測定電流と第一の副測定電流と第二の副測定電流とが測定できるようにされており、それらの電流値から求めた大きさと印加時間を平均した第二の離間電圧を求めて印加するようにしてもよい。 In addition, in this suction device 221, a main measurement electrode 225, a first secondary measurement electrode 226, and a second secondary measurement electrode 227 are provided at the four corners of the suction device 221, so that the main measurement current, the first secondary measurement current, and the second secondary measurement current can be measured at multiple corner locations, and a second separation voltage can be calculated by averaging the magnitude and application time calculated from these current values and applied.

なお、以上はスパッタリングターゲット141をスパッタリングして薄膜を形成する真空処理方法と真空処理装置105とについて説明したが、本発明の真空処理方法と真空処理装置105とには、スパッタリング方法とスパッタリング装置とに限定されるものではなく、エッチング方法とエッチング装置、CVD方法とCVD装置等、真空雰囲気中で基板を処理する方法と、その方法に用いる真空処理装置が広く含まれる。 The above describes a vacuum processing method and vacuum processing apparatus 105 for forming a thin film by sputtering a sputtering target 141, but the vacuum processing method and vacuum processing apparatus 105 of the present invention are not limited to a sputtering method and sputtering apparatus, but broadly include methods for processing a substrate in a vacuum atmosphere and vacuum processing apparatuses used for such methods, such as an etching method and an etching apparatus, and a CVD method and a CVD apparatus.

なお、上記工程1~工程9では、測定に用いたピンと昇降に用いたピンとは別々のピンであったが、境界の動作が同一となるような電極形状または昇降ピン形状とすれば、同一のピンを測定と昇降に用いられる兼用ピンにすることができる。 In steps 1 to 9 above, the pins used for measurement and the pins used for lifting and lowering are separate pins, but if the electrode shape or lifting pin shape is such that the boundary operation is the same, the same pin can be used as a dual-purpose pin for both measurement and lifting and lowering.

その場合、兼用ピンは測定用ベローズの内部に配置され、測定の際と昇降の際には主昇降装置及び測定用昇降装置として動作する昇降装置によって昇降移動するようにしておけば、測定ピンと昇降ピンとに代わって兼用ピンによって上記工程1~工程9を行うことができる。 In this case, the dual-purpose pin is placed inside the measurement bellows, and during measurement and lifting, it is raised and lowered by a lifting device that operates as the main lifting device and the measurement lifting device. In this way, steps 1 to 9 above can be performed using the dual-purpose pin instead of the measurement pin and lifting pin.

さらに前記兼用ピン以外の昇降ピンを脱着可能としておけば、昇降装置は兼用ピンのみを持つ事となり、これはすなわち主昇降装置が測定ピンを昇降移動させる事と同一となるので測定用昇降装置と主昇降装置を合一させ、単一の昇降装置として簡略化した構成とする事も出来る。 Furthermore, if the lifting pins other than the dual-purpose pin are made detachable, the lifting device will only have dual-purpose pins, which is the same as the main lifting device lifting and lowering the measurement pins. Therefore, the measurement lifting device and the main lifting device can be combined into a single lifting device, simplifying the configuration.

上記は合一とした簡略構成の例を示したが、この様な手法にとどまらず、測定ピンを昇降移動させる工程については別途の装置で行い、前述した<予備測定>での工程で得た測定値(評価値)を、本発明の装置へ適用する構成とする事でも、測定用昇降装置や測定ピンなどの構成を省略することが出来る。 The above is an example of a simplified integrated configuration, but it is not limited to this method. The process of raising and lowering the measurement pin can be performed in a separate device, and the measurement value (evaluation value) obtained in the above-mentioned <preliminary measurement> process can be applied to the device of the present invention, thereby eliminating the need for a measurement lifting device and measurement pin.

105……真空処理装置
108、208……第一種類の電極
109、209……第二種類の電極
111……真空槽
112……吸着装置
113……製造基板
115……電流測定装置
116……電源装置
125、225……主測定電極
126……副測定電極
130……部分離間装置
226……第一の副測定電極
227……第二の副測定電極
105... vacuum processing apparatus 108, 208... first type of electrode 109, 209... second type of electrode 111... vacuum chamber 112... suction device 113... manufacturing substrate 115... current measuring device 116... power supply device 125, 225... main measurement electrode 126... secondary measurement electrode 130... partial separation device 226... first secondary measurement electrode 227... second secondary measurement electrode

Claims (16)

真空槽と、
前記真空槽内に配置され、装置本体に互いに離間された第一種類の電極と第二種類の電極とが設けられた吸着装置と、
前記第一種類の電極と前記第二種類の電極との間に、前記吸着装置に配置された基板を吸着させる吸着電圧と、前記吸着電圧と逆極性であって残留電荷を減少させる第一の離間電圧とを印加する電源装置と、
を有し、
前記第一種類の電極と前記第二種類の電極との間に前記吸着電圧を印加し、前記吸着装置に吸着された製造基板を真空雰囲気中で処理し、前記第一種類の電極と前記第二種類の電極との間に前記第一の離間電圧を印加して、前記吸着装置と前記製造基板との間に蓄積された電荷を減少させて前記吸着装置と前記製造基板とを分離させる真空処理装置であって、
前記装置本体には、前記第一種類の電極と前記第二種類の電極とから離間され、前記吸着装置に吸着された前記製造基板の縁付近の部分と対面する場所に主測定電極が設けられ、
前記真空処理装置には、
前記吸着装置に吸着された前記製造基板のうち前記主測定電極と対面する部分である主対面部分を前記吸着装置から離間させる部分離間装置と、
前記主測定電極に流れる電流である主測定電流の大きさを測定する電流測定装置と、
が設けられ、
前記主測定電極の面積は、前記第一種類の電極の面積と前記第二種類の電極の面積とよりも小さくされ、
前記製造基板を吸着する際には、前記主測定電極には前記第一種類の電極に印加される電圧と同じ極性で同じ大きさの電圧が印加される真空処理装置。
A vacuum chamber;
a suction device disposed in the vacuum chamber, the suction device having a first type of electrode and a second type of electrode spaced apart from each other on a main body of the device;
a power supply unit that applies, between the first type of electrode and the second type of electrode, an attraction voltage for attracting a substrate placed on the attraction device, and a first separation voltage that has a polarity opposite to that of the attraction voltage and reduces residual charges;
having
a vacuum processing apparatus that applies an attraction voltage between the first type of electrode and the second type of electrode, processes a manufacturing substrate attracted to the attraction device in a vacuum atmosphere, and applies a first separation voltage between the first type of electrode and the second type of electrode to reduce electric charges accumulated between the attraction device and the manufacturing substrate, thereby separating the attraction device and the manufacturing substrate,
a main measurement electrode is provided on the device body at a position spaced apart from the first type of electrodes and the second type of electrodes and facing a portion near an edge of the production substrate that is sucked by the suction device;
The vacuum processing apparatus includes:
a separation device for separating a main facing portion of the manufacturing substrate sucked by the suction device, the main facing portion being a portion facing the main measurement electrode, from the suction device;
a current measuring device for measuring the magnitude of a main measurement current which is a current flowing through the main measurement electrode;
was established,
The area of the main measurement electrodes is smaller than the area of the first type of electrodes and the area of the second type of electrodes,
In the vacuum processing apparatus, when the production substrate is attracted to the main measurement electrodes, a voltage having the same polarity and magnitude as a voltage applied to the first type of electrodes is applied to the main measurement electrodes.
前記部分離間装置は、移動可能な測定ピンを有し、
前記吸着装置に吸着された前記製造基板のうち、前記測定ピンが接触する接触部分は前記製造基板の縁と前記主対面部分との間に配置された請求項1記載の真空処理装置。
The part separation device has a movable measuring pin,
2. The vacuum processing apparatus according to claim 1, wherein a contact portion of the production substrate held by the suction device, with which the measurement pins come into contact, is disposed between an edge of the production substrate and the main facing portion.
前記吸着装置に吸着され、前記第一の離間電圧が印加された前記製造基板の残留電荷を減少させる第二の離間電圧の極性と大きさと印加時間とを、測定した前記主測定電流の向きと大きさとから求め、前記電源装置によって前記第二の離間電圧を前記第一、第二種類の電極間に印加させる制御装置を有する請求項1又は2のいずれか1項記載の真空処理装置。 A vacuum processing apparatus according to claim 1 or 2, further comprising a control device which determines the polarity, magnitude and application time of a second separation voltage, which reduces the residual charge of the manufacturing substrate that is attracted to the attraction device and to which the first separation voltage is applied, from the direction and magnitude of the measured main measurement current, and applies the second separation voltage between the first and second types of electrodes by the power supply device. 前記第二の離間電圧の極性と大きさと印加時間に対して前記主測定電流の向きと大きさとが対応付けられた電流電圧関係が記憶された記憶装置を有し、
前記制御装置は、前記第二の離間電圧の極性と大きさと印加時間とを、前記主測定電流の向きと大きさとを前記電流電圧関係に照合して求める請求項3記載の真空処理装置。
a storage device that stores a current-voltage relationship in which the direction and magnitude of the main measurement current are associated with the polarity, magnitude, and application time of the second separation voltage;
4. The vacuum processing apparatus according to claim 3, wherein the control device determines the polarity, magnitude and application time of the second separation voltage by checking the direction and magnitude of the main measurement current against the current-voltage relationship.
前記装置本体には、前記第一種類の電極と前記第二種類の電極と前記主測定電極とから離間され、前記主測定電極に隣接し、前記第一種類の電極と前記第二種類の電極とよりも小さくされた副測定電極が設けられ、
前記副測定電極は、前記装置本体に配置された前記製造基板のうち前記副測定電極と対面する部分である副対面部分と前記主対面部分とが前記部分離間装置によって前記吸着装置から離間される場所に配置され、
前記副測定電極には前記製造基板を吸着する際には前記主測定電極と同じ極性で同じ大きさの電圧が印加され、
前記電流測定装置により前記副測定電極に流れる電流である副測定電流の向きと大きさとが測定される請求項1又は2のいずれか1項記載の真空処理装置。
The device body is provided with a secondary measurement electrode that is spaced apart from the first type of electrodes, the second type of electrodes, and the main measurement electrode, adjacent to the main measurement electrode, and smaller than the first type of electrodes and the second type of electrodes;
the secondary measurement electrode is disposed at a location where a secondary facing portion, which is a portion of the production substrate disposed in the device body that faces the secondary measurement electrode, and the main facing portion are separated from the suction device by the part separation device,
a voltage having the same polarity and magnitude as that of the main measurement electrode is applied to the secondary measurement electrode when the production substrate is attracted;
3. The vacuum processing apparatus according to claim 1, wherein the current measuring device measures a direction and a magnitude of a secondary measurement current that flows through the secondary measurement electrode.
前記吸着装置に吸着され、前記第一の離間電圧が印加された前記製造基板の残留電荷を減少させる第二の離間電圧の大きさと印加時間とを、測定した前記主測定電流の大きさと、測定した前記副測定電流の大きさとから求めて前記第一種類の電極と前記第二種類の電極との間に印加する制御装置を有する請求項5記載の真空処理装置。 The vacuum processing apparatus according to claim 5, further comprising a control device that determines the magnitude and application time of a second separation voltage that reduces the residual charge of the manufacturing substrate that is attracted to the attraction device and to which the first separation voltage is applied, from the measured magnitude of the main measurement current and the measured magnitude of the secondary measurement current, and applies the second separation voltage between the first type of electrode and the second type of electrode. 前記第二の離間電圧の極性と大きさと印加時間に対して前記主測定電流の向きと大きさとが対応付けられた電流電圧関係が記憶された記憶装置を有し、
前記制御装置は、前記第二の離間電圧の極性と大きさと印加時間とを、前記主測定電流の向きと大きさと、前記副測定電流の向きと大きさとを前記電流電圧関係に照合して求める請求項6記載の真空処理装置。
a storage device that stores a current-voltage relationship in which the direction and magnitude of the main measurement current are associated with the polarity, magnitude, and application time of the second separation voltage;
7. The vacuum processing apparatus according to claim 6, wherein the control device determines the polarity, magnitude and application time of the second separation voltage by comparing the direction and magnitude of the main measurement current and the direction and magnitude of the secondary measurement current with the current-voltage relationship.
互いに離間された第一種類の電極と第二種類の電極とが装置本体に設けられた吸着装置の、前記第一種類の電極と前記第二種類の電極との間に吸着電圧を印加して前記吸着装置に製造基板を吸着させる吸着工程と、
前記吸着装置に吸着された前記製造基板を真空雰囲気中で処理する処理工程と、
前記第一種類の電極と前記第二種類の電極との間に前記吸着電圧と逆極性の第一の離間電圧を印加して残留電荷を減少させる第一の残留電荷減少工程と、
前記製造基板を前記吸着装置から離間させる離間工程と、
を有する真空処理方法であって、
前記処理工程では、前記第一種類の電極と前記第二種類の電極とよりも小さく、前記吸着装置に吸着された前記製造基板の縁付近の部分と対面する場所に配置された主測定電極に前記第一種類の電極に印加される電圧と同じ極性で同じ大きさの電圧を印加し、
第一の残留電荷減少工程後、前記離間工程を行う前に、前記吸着装置に吸着された前記製造基板のうちの前記主測定電極と対面する部分である主対面部分を前記吸着装置から離間させることで前記主測定電極に電流を流し、前記主測定電極に流れた電流である主測定電流の大きさを測定する電流測定工程が設けられた真空処理方法。
a suction step of applying a suction voltage between a first type of electrode and a second type of electrode spaced apart from each other, to a suction device provided on a device body, to cause the suction device to suction the manufacturing substrate;
a processing step of processing the manufacturing substrate held by the suction device in a vacuum atmosphere;
a first residual charge reduction step of reducing residual charges by applying a first separating voltage having a polarity opposite to that of the attracting voltage between the first type of electrode and the second type of electrode;
a separating step of separating the manufacturing substrate from the suction device;
A vacuum processing method comprising:
In the processing step, a voltage having the same polarity and magnitude as the voltage applied to the first type of electrode is applied to a main measurement electrode that is smaller than the first type of electrode and the second type of electrode and is disposed in a position facing a portion near an edge of the production substrate that is sucked to the suction device;
A vacuum processing method including a current measurement process for passing a current through the main measurement electrode by separating a main facing portion of the manufacturing substrate adsorbed to the suction device, which is a portion facing the main measurement electrode, from the suction device after a first residual charge reduction process and before performing the separation process, and measuring the magnitude of the main measurement current, which is the current flowing through the main measurement electrode.
前記電流測定工程では、前記吸着装置に吸着された前記製造基板のうち、前記主対面部分と前記製造基板の縁との間の部分に前記主対面部分を前記吸着装置から離間させる力を印加する請求項8 記載の真空処理方法。 The vacuum processing method according to claim 8, wherein in the current measurement process, a force is applied to the portion of the manufacturing substrate between the main facing portion and an edge of the manufacturing substrate that is held by the suction device, to separate the main facing portion from the suction device. 前記電流測定工程後、前記離間工程の前に、前記第一種類の電極と前記第二種類の電極との間に第二の離間電圧を印加する第二の残留電荷減少工程が設けられた請求項8又は9のいずれか1項記載の真空処理方法であって、
前記電流測定工程では、前記吸着装置に吸着され、前記第一の離間電圧が印加された前記製造基板の残留電荷を減少させる前記第二の離間電圧の極性と大きさと印加時間とを、測定した前記主測定電流の向きと大きさとから求める真空処理方法。
10. The vacuum processing method according to claim 8, further comprising a second residual charge reducing step of applying a second separation voltage between the first type of electrode and the second type of electrode after the current measuring step and before the separating step,
A vacuum processing method in which, in the current measurement process, the polarity, magnitude, and application time of the second spacing voltage that reduces the residual charge of the production substrate that is adsorbed by the adsorption device and to which the first spacing voltage is applied are determined from the direction and magnitude of the measured main measurement current.
前記電流測定工程では、前記第二の離間電圧の極性と大きさと印加時間に対して前記主測定電流の向きと大きさとが対応付けられた電流電圧関係に、測定された前記主測定電流の向きと大きさとを照合して前記第二の離間電圧の極性と大きさと印加時間とを求める請求項10記載の真空処理方法。 The vacuum processing method according to claim 10, wherein in the current measurement process, the polarity, magnitude, and application time of the second separation voltage are obtained by comparing the measured direction and magnitude of the main measurement current with a current-voltage relationship in which the polarity, magnitude, and application time of the second separation voltage correspond to the direction and magnitude of the main measurement current. 前記処理工程では、前記装置本体の前記主測定電極に隣接し、前記第一種類の電極と前記第二種類の電極と前記主測定電極とから絶縁された場所に設けられ、前記第一種類の電極と前記第二種類の電極とよりも小さくされた副測定電極に前記主測定電極と同じ極性で同じ大きさの電圧を印加し、
前記電流測定工程では、前記吸着装置に吸着された前記製造基板のうち前記副測定電極と対面する部分である副対面部分を、前記主対面部分を離間させた後に前記吸着装置から離間させることで前記副測定電極に電流を流し、前記副測定電極に流れた電流である副測定電流の大きさを測定する請求項9又は10のいずれか1項記載の真空処理方法。
In the processing step, a voltage of the same polarity and magnitude as that of the main measurement electrode is applied to a sub-measurement electrode that is adjacent to the main measurement electrode of the device body, is provided at a location insulated from the first type electrode, the second type electrode, and the main measurement electrode, and is smaller than the first type electrode and the second type electrode;
A vacuum processing method described in any one of claims 9 or 10, in the current measurement process, a secondary facing portion, which is a portion of the manufacturing substrate adsorbed to the suction device that faces the secondary measurement electrode, is separated from the suction device after the main facing portion is separated, thereby passing a current through the secondary measurement electrode, and the magnitude of the secondary measurement current, which is the current flowing through the secondary measurement electrode, is measured.
前記電流測定工程後、前記離間工程の前に、前記第一種類の電極と前記第二種類の電極との間に第二の離間電圧を印加する第二の残留電荷減少工程が設けられた請求項12に記載の真空処理方法であって、
前記電流測定工程後、前記第二の残留電荷減少工程の前に、前記吸着装置に吸着され、前記第一の離間電圧が印加された前記製造基板の残留電荷を減少させる前記第二の離間電圧の大きさと印加時間とを、測定した前記主測定電流の大きさと、測定された前記副測定電流の大きさとから求める求条件工程が設けられた真空処理方法。
13. The vacuum processing method according to claim 12, further comprising a second residual charge reducing step of applying a second separation voltage between the first type of electrode and the second type of electrode after the current measuring step and before the separating step,
A vacuum processing method including a condition determining step, which is performed after the current measuring step and before the second residual charge reducing step, of determining the magnitude and application time of the second separation voltage that reduces the residual charge of the production substrate that is adsorbed by the adsorption device and to which the first separation voltage has been applied, from the measured magnitude of the main measurement current and the measured magnitude of the secondary measurement current.
前記第二の離間電圧の大きさと印加時間に対して前記主測定電流の大きさと前記副測定電流の大きさとが対応付けられた電流電圧関係に、測定された前記主測定電流の大きさと測定された前記副測定電流の大きさとを照合して前記第二の離間電圧の大きさと印加時間とを求める請求項13記載の真空処理方法。 The vacuum processing method according to claim 13, wherein the magnitude and application time of the second separation voltage are obtained by comparing the measured magnitude of the main measurement current with the measured magnitude of the secondary measurement current in a current-voltage relationship in which the magnitude of the main measurement current and the magnitude of the secondary measurement current correspond to the magnitude and application time of the second separation voltage. 前記第二の離間電圧を印加する際には、前記主測定電極を前記第一種類の電極と前記第二種類の電極とから絶縁させる請求項10記載の真空処理方法。 11. The vacuum processing method according to claim 10 , wherein the main measurement electrode is insulated from the first type of electrodes and the second type of electrodes when the second separation voltage is applied. 前記第二の離間電圧を印加する際には、前記主測定電極と前記副測定電極とを前記第一種類の電極と前記第二種類の電極とから絶縁させる請求項13又は14のいずれか1項記載の真空処理方法。 The vacuum processing method according to claim 13 or 14, wherein when the second separation voltage is applied, the main measurement electrode and the secondary measurement electrode are insulated from the first type of electrode and the second type of electrode.
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