JP7489063B2 - Detection device - Google Patents

Description

An embodiment of the present invention relates to a detection device.

A detection device is provided that detects an object to be detected by attaching an object to which a magnetic substance such as a magnetic bead is fixed to a substrate. Such a detection device irradiates the substrate with electromagnetic waves and measures the intensity of the reflected waves from the substrate. The detection device detects the object to be detected based on the intensity.

Conventionally, if the strength of the irradiated electromagnetic waves changes due to a malfunction of the detection device or the influence of external disturbances, there is a risk of errors in detecting the object to be detected.

JP 2008-185552 A

To solve the above problem, we provide a detection device that can prevent detection errors.

According to an embodiment, a detection device for detecting an object having a magnetic body fixed thereto from a sample includes an installation unit, an irradiation unit, a detection unit, and a processor. The installation unit supports a substrate to which the sample is attached. The irradiation unit irradiates the substrate with an irradiation wave having a first frequency and an irradiation wave having a second frequency different from the first frequency. The detection unit detects the intensity of a reflected wave or a transmitted wave from the substrate. The processor calculates a sensitivity based on a first intensity of a reflected wave or a transmitted wave of the irradiation wave having the first frequency and a second intensity of a reflected wave or a transmitted wave of the irradiation wave having the second frequency, and outputs an error based on the sensitivity.

FIG. 1 is a diagram illustrating an example of the configuration of a detection device according to an embodiment. FIG. 2 is a diagram showing a control system of the detection device according to the embodiment. FIG. 3 is a top view that illustrates a schematic configuration example of a substrate according to an embodiment. FIG. 4 is a cross-sectional view that illustrates a schematic configuration example of a substrate according to an embodiment. FIG. 5 is a graph showing an example of the reflectance of a substrate according to the embodiment. FIG. 6 is a graph showing an example of the reflectance of a substrate according to the embodiment. FIG. 7 is a flowchart illustrating an example of the operation of the detection device according to the embodiment.

The following describes the embodiments with reference to the drawings. Note that each figure is a schematic diagram to facilitate understanding of the embodiments, and the shapes, dimensions, ratios, etc. may be modified as appropriate.

The detection device according to the embodiment detects organic matter (detection target) such as E. coli contained in a sample. The detection device attaches the sample to a substrate having a structure with a void. The detection device irradiates electromagnetic waves having a predetermined frequency onto the substrate to which the sample is attached and detects the reflected waves from the substrate. The detection device determines whether or not the detection target is present on the substrate based on the intensity of the reflected waves.

Figure 1 shows a schematic configuration example of the detection device 1. As shown in Figure 1, the detection device 1 includes an electromagnetic wave generating unit 12, an optical system 13, a beam diameter adjusting unit 14, a stage 16, an optical system 17, an electromagnetic wave receiving unit 18, and a substrate 20.

The electromagnetic wave generating unit 12 (irradiation unit) irradiates the substrate 20 with electromagnetic waves (irradiation waves) according to the control of the processor 111 described below. The electromagnetic wave generating unit 12 irradiates electromagnetic waves with a frequency corresponding to the applied voltage. For example, the electromagnetic wave generating unit 12 irradiates electromagnetic waves with a frequency of about several terahertz. For example, the electromagnetic wave generating unit 12 is composed of a resonant tunneling diode that oscillates at a predetermined frequency when a predetermined bias voltage is applied.

The optical system 13 is a lens that focuses the irradiated wave onto the substrate 20. For example, the optical system 13 is composed of multiple lenses.

The beam diameter adjustment unit 14 adjusts the diameter of the irradiation wave irradiated to the substrate 20. That is, the beam diameter adjustment unit 14 adjusts the area on the substrate 20 where the irradiation wave is focused. The beam diameter adjustment unit 14 may adjust the diameter of the irradiation wave to a predetermined size. The beam diameter adjustment unit 14 may also adjust the diameter of the irradiation wave according to control from the processor 111.

The stage 16 (mounting portion) is a member that supports the substrate 20. The stage 16 is fixed to a predetermined table. The stage 16 moves the substrate 20 according to control from the processor 111. For example, the stage 16 moves according to control from the processor 111. The stage 16 moves the substrate 20 in the X-axis direction (e.g., the left-right direction in FIG. 1), the Y-axis direction (e.g., the vertical direction relative to FIG. 1), and the Z-axis direction (e.g., the up-down direction in FIG. 1).

The stage 16 may also rotate the substrate 20 around a predetermined axis as a central axis under control of the processor 111.

The optical system 17 is a lens for focusing the electromagnetic waves (reflected waves) reflected by the substrate 20 onto the electromagnetic wave receiving unit 18. For example, the optical system 17 is composed of multiple lenses.

The electromagnetic wave receiving unit 18 (detection unit) detects the intensity of the reflected wave. The electromagnetic wave receiving unit 18 converts the reflected wave into a voltage according to its intensity. For example, the electromagnetic wave receiving unit 18 is composed of a Schottky barrier diode that has sensitivity up to the terahertz band when a predetermined bias voltage is applied. The electromagnetic wave receiving unit 18 may also include an amplifier that amplifies the voltage from the Schottky barrier diode.

Next, a control system of the detection device 1 will be described.
2 is a block diagram showing a control system of the detection device 1. The detection device 1 includes an electromagnetic wave generating unit 12, a stage 16, an electromagnetic wave receiving unit 18, a processor 111, a memory 112, an address decoder 113, a pattern generating unit 114, a first D/A converter 115, a second D/A converter 116, an A/D converter 117, a motor driver 118, a first bias T 119, a second bias T 120, and a stage motor 121.

The address decoder 113 is connected to the processor 111, the memory 112, the pattern generating unit 114, the first D/A converter 115, the second D/A converter 116, the A/D converter 117, and the motor driver 118. The first bias Tee 119 is connected to the electromagnetic wave generating unit 12, the pattern generating unit 114, and the first D/A converter 115. The second bias Tee 120 is connected to the electromagnetic wave receiving unit 18 and the second D/A converter 116. The A/D converter 117 is connected to the electromagnetic wave receiving unit 18 and the pattern generating unit 114. The motor driver 118 is connected to a stage motor 121. The stage motor 121 is connected to the stage 16.
The electromagnetic wave generating unit 12, the stage 16 and the electromagnetic wave receiving unit 18 are as described above.

The processor 111 controls the operation of the entire detection device 1. For example, the processor 111 controls the stage 16 to control the position of the substrate 20, etc. The processor 111 also causes the electromagnetic wave generating unit 12 to irradiate electromagnetic waves. The processor 111 also detects the object to be detected based on the intensity of the reflected wave detected by the electromagnetic wave receiving unit 18.

For example, the processor 111 is composed of a CPU or the like. The processor 111 may also be composed of an ASIC (Application Specific Integrated Circuit) or the like. The processor 111 may also be composed of an FPGA (Field Programmable Gate Array) or the like.

The memory 112 (storage unit) stores various data. For example, the memory 112 functions as a ROM, a RAM, and an NVM.
For example, the memory 112 stores a control program, control data, etc. The control program and control data are pre-installed according to the specifications of the detection device 1. For example, the control program is a program that supports functions realized by the detection device 1.

In addition, memory 112 temporarily stores data being processed by processor 111. Memory 112 may also store data required for the execution of application programs and the execution results of application programs.

The address decoder 113 supplies each component with a control signal from the processor 111 according to the address bus. For example, the address decoder 113 determines the target to which the control signal is to be supplied based on the address indicated by the control signal from the processor 111.

The pattern generating unit 114 generates a periodic modulation signal. The pattern generating unit 114 supplies the generated modulation signal to the A/D converter 117 and the first bias Tee 119. The pattern generating unit 114 operates based on settings from the processor 111. For example, the pattern generating unit 114 is composed of a counter, a timer, or the like.

The first D/A converter 115 converts the digital signal from the processor 111 into an analog signal. Here, the first D/A converter 115 converts the digital signal into an analog signal and supplies it to the first bias Tee 119.

The second D/A converter 116 converts the digital signal from the processor 111 into an analog signal. Here, the second D/A converter 116 converts the digital signal from the processor 111 into an analog signal and supplies it to the second bias Tee 120.

The A/D converter 117 converts the voltage from the electromagnetic wave receiving unit 18 into a sensor signal (digital signal) using the modulated signal from the pattern generating unit 114. Here, the A/D converter 117 converts the voltage from the electromagnetic wave receiving unit 18 into a digital signal and supplies it to the processor 111. The A/D converter 117 may also be connected to the electromagnetic wave receiving unit 18 via a diode.

The motor driver 118 drives the stage motor 121 according to control from the processor 111. For example, the motor driver 118 supplies a voltage or a pulse signal to the stage motor 121.

The stage motor 121 is a motor for moving the stage 16. The stage motor 121 is driven under control of the motor driver 118. The stage motor 121 may be composed of a motor for moving the stage 16 in the X direction, a motor for moving the stage 16 in the Y direction, and a motor for moving the stage 16 in the Z direction. The stage motor 121 may also be composed of a motor for rotating the stage 16.

The first bias Tee 119 superimposes the modulation signal from the pattern generating unit 114 on the bias voltage from the first D/A converter 115. The first bias Tee 119 supplies the bias voltage superimposed with the modulation signal to the electromagnetic wave generating unit 12.

The second bias Tee 120 supplies the bias voltage from the first D/A converter 115 to the electromagnetic wave receiving unit 18.

The detection device 1 may further include components as necessary in addition to the components shown in Figures 1 and 2, or certain components may be excluded from the detection device 1.

Next, the substrate 20 will be described. FIG. 3 is a top view of the substrate 20. FIG. 3 is a cross-sectional view of the substrate 20 taken along the line F4-F4 in FIG. 3.

As shown in Figures 3 and 4, the substrate 20 is composed of a base material 21 and a structure 22.

The substrate 21 is formed, for example, into a rectangle of a predetermined size. It is preferable that the substrate 21 is made of a material that does not change in response to the electromagnetic waves emitted by the electromagnetic wave generating unit 12. In other words, it is preferable that the substrate 21 is made of a material that is transparent in the frequency band of the electromagnetic waves irradiated by the electromagnetic wave generating unit 12. For example, the substrate 21 is made of a silicon wafer or the like. The substrate 21 may also be made of an organic material such as polyethylene.

For example, the thickness of the substrate is in the range of 100 to 800 μm. For example, the thickness of the substrate 21 is 525 μm.
The material and the outer dimensions of the base material 21 are not limited to a specific configuration.

The structure 22 is formed on a predetermined surface of the substrate 21. The structure 22 reflects the electromagnetic waves irradiated by the electromagnetic wave generating unit 12. The structure 22 has frequency characteristics in terms of reflectance. It is desirable that the structure 22 is a conductor that is reflective in the frequency band of the electromagnetic waves irradiated by the electromagnetic wave generating unit 12.

For example, the structure 22 is formed of a conductor such as gold or aluminum. The structure 22 may be a structure including multiple layers. For example, the structure 22 may include a layer of chromium or titanium as an adhesion layer to the substrate 21.
For example, the thickness of the structure 22 ranges from 0.1 μm to 50 μm. For example, the thickness of the structure 22 is 0.2 μm.

The structure 22 has a plurality of voids 23 (periodic structure). The structure 22 has voids 23 periodically arranged in the vertical and horizontal directions at predetermined intervals.

Structure 22 forms a complementary split ring resonator with gap 23. Structure 22 forms an LCR (coil, capacitor, resistor) circuit with gap 23. Structure 22 has a resonant characteristic at a predetermined resonant frequency due to the LCR circuit.

The void 23 has a ring structure. The void 23 has a structure in which a part of the ring is cut. In other words, the void 23 is formed in a C-shape. For example, the outer dimension of the void 23 is several tens of μm. Also, the width of the void 23 (the gap width) is several μm.

For example, the structure 22 has a peak or minimum in reflectance in the several terahertz band due to the voids 23 .
The size, shape, and number of the voids 23 in the structure 22 are not limited to a specific configuration.

Next, the functions realized by the detection device 1 will be described. The functions realized by the detection device 1 are realized by the processor 111 executing a program stored in the memory 112 or the like.

Here, it is assumed that a sample is attached onto the structure 22 of the substrate 20. The sample is a liquid that contains (may contain) the substance to be detected to which magnetic beads (magnetic material) are fixed. It is assumed that the attached sample is dried by a heating mechanism or the like.

First, the processor 111 has a function of measuring the intensity of the reflected wave from the substrate 20 using an electromagnetic wave having a first frequency (f1) and an electromagnetic wave having a second frequency (f2) different from the first frequency.

For example, the processor 111 uses the stage 16 to move the substrate 20 to a position where the irradiation wave from the electromagnetic wave generating unit 12 is irradiated. That is, the processor 111 drives the stage motor 121 via the motor driver 118. The stage 16 moves the substrate 20 by driving the stage motor 121.

Note that if the default position of the substrate 20 is a position where the irradiation wave from the electromagnetic wave generating unit 12 is irradiated, the processor 111 does not need to move the substrate 20.

When moved to the substrate 20, the processor 111 causes the electromagnetic wave generating unit 12 to irradiate an irradiation wave having a first frequency. For example, the processor 111 acquires a setting value of a bias voltage corresponding to the first frequency from the memory 112 or the like. Upon acquiring the setting value, the processor 111 sets the acquired setting value in the first D/A converter 115.

The first D/A converter 115 outputs a bias voltage corresponding to a set value from the processor 111 to the first bias Tee 119. When a signal from the pattern generating unit 114 is input, the first bias Tee 119 outputs the bias voltage from the first D/A converter 115 to the electromagnetic wave generating unit 12. The electromagnetic wave generating unit 12 irradiates an irradiation wave having a first frequency by the bias voltage from the first bias Tee 119.

When the electromagnetic wave generating unit 12 is caused to irradiate the substrate 20 with irradiation waves having a first frequency, the processor 111 obtains the intensity of the reflected wave from the substrate 20 using the electromagnetic wave receiving unit 18. For example, the electromagnetic wave receiving unit 18 outputs a voltage corresponding to the intensity of the reflected wave to the A/D converter 117. The A/D converter 117 generates a sensor signal indicating the intensity of the reflected wave according to the voltage from the electromagnetic wave receiving unit 18. The A/D converter 117 transmits the generated sensor signal to the processor 111. The processor 111 receives the sensor signal.

When the intensity of the reflected wave is acquired, the processor 111 acquires the intensity as the reflection intensity (first reflection intensity, first intensity) of an electromagnetic wave having a first frequency.

When the first reflection intensity is acquired, the processor 111 causes the electromagnetic wave generating unit 12 to irradiate an irradiation wave having a second frequency. For example, the processor 111 acquires a setting value of a bias voltage corresponding to the second frequency from the memory 112 or the like. When the setting value is acquired, the processor 111 sets the acquired setting value in the first D/A converter 115.

The first D/A converter 115 outputs a bias voltage corresponding to a set value from the processor 111 to the first bias Tee 119. When a signal from the pattern generating unit 114 is input, the first bias Tee 119 outputs the bias voltage from the first D/A converter 115 to the electromagnetic wave generating unit 12. The electromagnetic wave generating unit 12 irradiates an irradiation wave having a second frequency by the bias voltage from the first bias Tee 119.

When the electromagnetic wave generating unit 12 is caused to irradiate the substrate 20 with irradiation waves having a second frequency, the processor 111 obtains the intensity of the reflected wave from the substrate 20 using the electromagnetic wave receiving unit 18. For example, the electromagnetic wave receiving unit 18 outputs a voltage corresponding to the intensity of the reflected wave to the A/D converter 117. The A/D converter 117 generates a sensor signal indicating the intensity of the reflected wave according to the voltage from the electromagnetic wave receiving unit 18. The A/D converter 117 transmits the generated sensor signal to the processor 111. The processor 111 receives the sensor signal.

When the intensity of the reflected wave is acquired, the processor 111 acquires the intensity as the reflection intensity of the electromagnetic wave having the second frequency (second reflection intensity, second intensity).

The processor 111 also has a function of calculating sensitivity based on the first reflection intensity and the second reflection intensity.

Sensitivity is a parameter that indicates the change in reflection intensity with respect to a change in frequency. For example, sensitivity is the slope of a reflection intensity graph.

The processor 111 calculates the sensitivity X according to the following formula:

Sensitivity X=(S12-S22)/(f1-f2)
Here, S12 indicates the first reflection intensity, and S22 indicates the second reflection intensity.
That is, the processor 111 calculates the sensitivity by dividing the difference between the first reflection intensity and the second reflection intensity by the difference between the first frequency and the second frequency.

The processor 111 also has the function of outputting an error based on the calculated sensitivity.

Here, the memory 112 pre-stores the sensitivity (reference sensitivity) of the substrate 20 when a test object having magnetic beads fixed thereto is present on the substrate 20.

The reference sensitivity is calculated as follows:
5 is a graph showing the relationship between the frequency of the irradiated wave and the reflection intensity of the substrate, where the horizontal axis represents the frequency of the irradiated wave and the vertical axis represents the reflection intensity.

Graph 31 shows the reflection intensity (reference intensity) when no object to be detected, to which magnetic beads are fixed, is present on substrate 20. As graph 31 shows, when the frequency of the irradiation wave is f1, the reflection intensity (first reference intensity) is S1. When the frequency of the irradiation wave is f2, the reflection intensity (second reference intensity) is S2.

Graph 32 shows the reflection intensity when a test object with magnetic beads fixed thereto is present on substrate 20. As graph 32 shows, when the frequency of the irradiated wave is f1, the reflection intensity is S11. Also, when the frequency of the irradiated wave is f2, the reflection intensity is S21.

Graph 33 shows the reflection intensity of substrate 20 when an object to be detected, to which magnetic beads are fixed, is present on substrate 20, causing an abnormality in the intensity of the irradiation wave. As shown in graph 33, when the frequency of the irradiation wave is f1, the reflection intensity is S12. Also, when the frequency of the irradiation wave is f2, the reflection intensity is S22.

The reference sensitivity is the slope between f1 and f2 in graph 32.
That is, the processor 111 calculates the reference sensitivity R according to the following formula.

Reference sensitivity R=(S11−S21)/(f1−f2)
The processor 111 determines whether the calculated sensitivity and the reference sensitivity match (are consistent). For example, the processor 111 determines that the calculated sensitivity and the reference sensitivity match if the difference between them is equal to or less than a predetermined threshold. The processor 111 may also determine that the calculated sensitivity and the reference sensitivity match if the difference between them is equal to or less than a predetermined ratio of the calculated sensitivity or the reference sensitivity.

If the two do not match, the processor 111 determines that an abnormality, such as a failure or disturbance in the detection device, has occurred. If it is determined that an abnormality has occurred, the processor 111 outputs an error. For example, the processor 111 displays a message indicating that an abnormality has occurred on a display unit or the like. The processor 111 may also transmit a signal indicating that an abnormality has occurred to an external device or the like.

In addition, when the calculated sensitivity matches the reference sensitivity, the processor 111 has a function of determining whether an object to be detected having magnetic beads fixed thereto is present on the substrate 20 based on the first reflection intensity and the second reflection intensity, etc.

Here, the memory 112 prestores the reflection intensity of the substrate 20 when the object to be detected, to which magnetic beads are fixed, is not present on the substrate 20. That is, the memory 112 stores a first reference intensity (here, S1) and a second reference intensity (here, S2).

The processor 111 determines whether the first reflection intensity and the first reference intensity match (are consistent). For example, the processor 111 determines that the first reflection intensity and the first reference intensity match if the difference between them is equal to or less than a predetermined threshold. The processor 111 may also determine that the first reflection intensity and the first reference intensity match if the difference between them is equal to or less than a predetermined ratio of the first reflection intensity or the first reference intensity.

The processor 111 also determines whether the second reflection intensity matches (is consistent with) the second reference intensity.

If the first reflection intensity matches the first reference intensity and the second reflection intensity matches the second reference intensity, the processor 111 determines that an object to be detected having magnetic beads fixed thereto is not present on the substrate 20.

In addition, if the first reflection intensity does not match the first reference intensity, or if the second reflection intensity does not match the second reference intensity, the processor 111 determines that an object to be detected having magnetic beads fixed thereto is present on the substrate 20.

When it is determined whether or not an object to be detected having magnetic beads fixed thereto is present on the substrate 20, the processor 111 presents the determination result. For example, the processor 111 displays a message indicating the determination result on a display unit or the like. The processor 111 may also transmit a signal indicating the determination result to an external device.

The processor 111 may measure the reflection intensity at the third frequency f3, the fourth frequency f4, and so on up to the nth frequency fn.

Figure 6 is a graph showing the reflection intensity at fn. In Figure 6, the horizontal axis shows the frequency of the irradiated wave, and the vertical axis shows the reflection intensity.

As in FIG. 5, graph 31 shows the reflection intensity (reference intensity) when no object to be detected with magnetic beads fixed thereto is present on the substrate. As graph 31 shows, when the frequency of the irradiated wave is f1, f2, ... fn, the reflection intensity is S1, S2, ... Sn.

Also, like FIG. 5, graph 32 shows the reflection intensity when a detection object with magnetic beads fixed thereto is present on the substrate. As graph 32 shows, when the frequency of the irradiation wave is f1, f2, ... fn, the reflection intensity is S11, S21 ... Sn1.

In this case, memory 112 pre-stores S1, S2...Sn as reference intensities.

If all of the reflection intensities measured at each frequency match the reference intensity, the processor 111 determines that no object to be detected with magnetic beads fixed thereto is present on the substrate 20.

In addition, if any one of the reflection intensities measured at each frequency does not match the reference intensity, the processor 111 determines that an object to be detected having magnetic beads fixed thereto is present on the substrate 20.

Next, an example of the operation of the detection device 1 will be described.
It is assumed here that a substrate 20 with a sample attached thereto is set on the stage 16 .

First, the processor 111 moves the stage 16 to move the substrate 20 to a position where the irradiation wave is irradiated (ACT 11). After moving the substrate 20, the processor 111 sets a setting value corresponding to the bias voltage to be applied to the electromagnetic wave receiving unit 18 in the second D/A converter 116 (ACT 12).

After setting the setting value in the second D/A converter 116, the processor 111 obtains the setting value of the bias voltage corresponding to the specified frequency (fn) from the memory 112 (ACT 13).

When the set value is acquired from the memory 112, the processor 111 sets the acquired set value in the first D/A converter 115 (ACT 14). When the acquired set value is set in the first D/A converter 115, the processor 111 sets a predetermined set value in the pattern generating unit 114 (ACT 15).

When a predetermined setting value is set in the pattern generating unit 114, the processor 111 drives the pattern generating unit 114 to cause the electromagnetic wave generating unit 12 to irradiate irradiation waves having a predetermined frequency (ACT 16).

When the electromagnetic wave generating unit 12 is caused to irradiate an irradiation wave having a predetermined frequency, the processor 111 uses the electromagnetic wave receiving unit 18 to obtain the intensity of the reflected wave (reflection intensity) from the substrate 20 (ACT 17).

Once the reflection intensity is acquired, the processor 111 stores the acquired reflection intensity in the memory 112 (ACT 18).

When the acquired reflection intensity is stored in the memory 112, the processor 111 determines whether the electromagnetic wave generating unit 12 has been caused to irradiate irradiation waves having each frequency (ACT 19). That is, the processor 111 determines whether the electromagnetic wave generating unit 12 has been caused to irradiate irradiation waves having frequencies f1 and f2.

If it is determined that the electromagnetic wave generating unit 12 is not irradiating irradiation waves having each frequency (ACT 19, NO), the processor 111 returns to ACT 13.

When it is determined that the electromagnetic wave generating unit 12 has been irradiated with irradiation waves having each frequency (ACT 19, YES), the processor 111 calculates the sensitivity based on the acquired reflection intensity, etc. (ACT 20). After calculating the sensitivity, the processor 111 stores the calculated sensitivity in the memory 112 (ACT 21).

After storing the calculated sensitivity in memory 112, processor 111 determines whether an abnormality has occurred based on the calculated sensitivity (ACT 22).

When it is determined that no abnormality has occurred (ACT 22, NO), the processor 111 determines whether an object to be detected is present on the substrate 20 based on the acquired reflection intensity or the like (ACT 23).
When it is determined that no abnormality occurs (ACT 22, YES), the processor 111 outputs an error (ACT 24).

If it is determined that an object to be detected is present on the substrate 20 (ACT 23), or if an error is output (ACT 24), the processor 111 ends the operation.

The processor 111 may calculate the sensitivity based on the reflection intensities at three or more different frequencies. The processor 111 may also calculate the sensitivity composed of multiple parameters. In this case, the reference sensitivity may be composed of multiple parameters according to the sensitivity.

The processor 111 may also calculate the sensitivity based on the reflectance. That is, the sensitivity may be a parameter that indicates a change in reflectance relative to a change in frequency.
In addition, the electromagnetic wave receiving section 18 may acquire the intensity of a transmitted wave from the substrate 20 .

The detection device configured as described above acquires the intensities of the reflected waves from the substrate at multiple frequencies. The detection device calculates the sensitivity from the multiple intensities. The detection device determines whether there is an abnormality in the intensity of the irradiated waves, etc., based on the sensitivity. If there is an abnormality, the detection device displays an error without detecting the detected part. As a result, the detection device can prevent detection errors caused by the occurrence of an abnormality.

Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are included in the scope of the invention and its equivalents described in the claims.

1...detection device, 12...electromagnetic wave generating unit, 13...optical system, 14...beam diameter adjusting unit, 16...stage, 17...optical system, 18...electromagnetic wave receiving unit, 20...substrate, 21...base material, 22...structure, 23...gap, 31...graph, 32...graph, 33...graph, 111...processor, 112...memory, 113...address decoder, 114...pattern generating unit, 115...first D/A converter, 116...second D/A converter, 117...A/D converter, 118...motor driver, 119...first bias T, 120...second bias T, 121...stage motor.

Claims (5)

A detection device for detecting an object having a magnetic substance fixed thereto from a sample, comprising:
a mounting portion for supporting a substrate to which the sample is attached;
an irradiation unit that irradiates the substrate with an irradiation wave having a first frequency and an irradiation wave having a second frequency different from the first frequency;
A detection unit that detects the intensity of a reflected wave or a transmitted wave from the substrate;
Calculating sensitivity based on a first intensity of a reflected wave or a transmitted wave of the irradiation wave having the first frequency and a second intensity of a reflected wave or a transmitted wave of the irradiation wave having the second frequency;
outputting an error based on the sensitivity;
A processor;
A detection device comprising: A storage unit for storing a reference sensitivity is provided,
the processor outputs the error if the sensitivity and the reference sensitivity do not match.
The detection device according to claim 1 . The reference sensitivity is a sensitivity when the object to be detected is present on the substrate.
3. The detection device according to claim 2. The processor calculates the sensitivity by dividing a difference between the first intensity and the second intensity by a difference between the first frequency and the second frequency.
Detecting device according to any one of claims 1 to 3. The substance to be detected is an organic substance.
5. A detection device according to any one of the preceding claims.