JP7489358B2 - How to fix the pattern - Google Patents

Description

The present invention relates to a pattern correction method for correcting a pattern on a photomask on which a pattern has already been formed.

For example, there is a known technique for modifying the pattern of a photomask that has already been used and fabricated (i.e., a photomask on which a pattern has already been formed). By modifying the pattern of a photomask on which a pattern has already been formed, a desired photomask can be fabricated more cheaply than by fabricating a new photomask. As an example of such a technique, Patent Document 1 discloses a technique for modifying a photomask pattern using CVD (Chemical Vapor Deposition).

Japanese Patent Application Laid-Open No. 2-140744

However, the technology described in Patent Document 1 has the problem that the area that can be repaired at one time is small, at several tens of μm × several tens of μm, and therefore it takes a long time to repair a large-scale pattern.

One aspect of the present invention aims to realize a pattern repair method that can perform large-scale pattern repair at once.

In order to solve the above problem, a pattern correction method according to one aspect of the present invention is a pattern correction method for correcting a new pattern on a photomask on which a pattern has already been formed by a first pattern forming portion containing a first material on a transparent substrate, and includes a film formation process for forming a second pattern forming portion containing a second material different from the first material on the surface of the photomask on which the pattern has been formed, a photoresist film formation process for forming a photoresist film on the surface of the photomask so as to cover the entire surface of the second pattern forming portion, a pattern formation process for forming a photoresist pattern by drawing on the photoresist film with a drawing device, and a first removal process for removing a part of the second pattern forming portion using an etching solution that dissolves the second material but not the first material, using the photoresist pattern as a mask.

According to one aspect of the present invention, large-scale pattern modification can be performed at once.

1 is a plan view showing an example of a photomask whose pattern is to be repaired by the pattern repair method according to a first embodiment of the present invention; FIG. 2 is an enlarged view of a region D1 shown in FIG. 1 is a diagram showing a portion of a pattern to be corrected by the pattern correction method according to a first embodiment of the present invention; 4 is a flowchart showing an example of a pattern correction method according to the first embodiment of the present invention. 1A to 1C are diagrams for explaining a pattern repair method according to a first embodiment of the present invention. FIG. 2 is a diagram showing a pattern formation region A after being repaired by the pattern repair method according to the first embodiment of the present invention. FIG. 13 is an enlarged view of one pattern formation region on a photomask that is a target for pattern correction in this modified example of the first embodiment. 8 is a cross-sectional view taken along line AA in FIG. 7. 11 is a diagram showing a pattern formation region after the pattern has been repaired by the pattern repair method of the modified example. FIG. 10 is a cross-sectional view taken along line BB in FIG. 9. FIG. 11 is a diagram showing another example of a pattern formation region after a pattern has been repaired by the pattern repair method of the modified example. FIG. 11 is a diagram showing yet another example of a pattern formation region after a pattern has been repaired by the pattern repair method of the modified example. FIG. 13 is an enlarged view of one pattern formation region on a photomask that is a target for pattern correction in another modified example of the first embodiment. 14 is a cross-sectional view taken along the line CC shown in FIG. 13. 11 is a diagram showing a pattern formation region after the pattern has been repaired by the pattern repair method of the modified example. FIG. 16 is a cross-sectional view taken along line EE shown in FIG. 15. 13A to 13C are diagrams for explaining another pattern repair method of the above modified example. 13A to 13C are diagrams for explaining another pattern repair method of the above modified example. FIG. 13 is an enlarged view of one pattern formation region on a photomask that is a target for pattern correction in another modified example of the first embodiment. 20 is a cross-sectional view taken along the line FF in FIG. 19. 11 is a diagram showing a pattern formation region after the pattern has been repaired by the pattern repair method of the modified example. FIG. 22 is a cross-sectional view taken along line GG in FIG. 21. FIG. 13 is an enlarged view of one pattern formation region on a photomask that is a target for pattern correction in another modified example of the first embodiment. 10A to 10C are diagrams for explaining a pattern correction method in the above modified example. 10A to 10C are diagrams for explaining a pattern correction method in the above modified example. FIG. 11 is a plan view of the photomask after being repaired by the pattern repair method according to the modified example. 13A to 13C are diagrams for explaining a pattern repair method according to another modified example of the first embodiment. 10A to 10C are diagrams for explaining a pattern correction method in the modified example. 13A to 13C are diagrams for explaining a pattern repair method according to another modified example of the first embodiment. 10A to 10C are diagrams for explaining a pattern correction method in the above modified example. 13A to 13C are diagrams for explaining a pattern repair method according to another modified example of the first embodiment. 10A to 10C are diagrams for explaining a pattern correction method in the above modified example. FIG. 11 is a plan view showing an example of a photomask whose pattern is to be repaired by the pattern repair method according to the second embodiment of the present invention. FIG. 34 is an enlarged view of an area D4 shown in FIG. 33. 11A and 11B are diagrams showing a portion of a pattern to be corrected by a pattern correction method according to a second embodiment of the present invention; 10 is a flowchart showing an example of a pattern correction method according to a second embodiment of the present invention. 10A to 10C are diagrams for explaining a pattern repair method according to a second embodiment of the present invention.

One embodiment of the present invention will be described in detail below. In this embodiment, a pattern correction method for correcting a pattern of a photomask in which a pattern has already been formed on a transparent substrate by a light-shielding film will be described. In this specification, a "photomask in which a pattern has already been formed" refers to a photomask in which a pattern has been formed on a transparent substrate, and which has been manufactured as a finished product through a series of manufacturing processes, and may be, for example, a photomask that has already been used.

Figure 1 is a plan view showing the configuration of a photomask 10 as an example of a photomask whose pattern is to be corrected by the pattern correction method of this embodiment. Figure 2 is an enlarged view of region D1 shown in Figure 1, showing one pattern formation region A.

As shown in Fig. 1, the photomask 10 has a plurality of pattern formation regions A formed on a transparent substrate 2. The transparent substrate 2 is made of a substrate such as synthetic quartz glass. The transparent substrate 2 has a transmittance of 95% or more for a representative wavelength contained in the exposure light in the exposure step. The representative wavelength of the exposure light may be, for example, i-line, h-line, or g-line, or a mixture thereof, but is not limited to these.
2, in the pattern formation region A, a pattern (hereinafter also referred to as a first pattern) is formed on the transparent substrate 2 by a first light-shielding film 11 (first pattern formation portion) containing a material (hereinafter referred to as a first material) that does not transmit light (i.e., has light-shielding properties). The first light-shielding film 11 is suitable for having an optical density OD value of 2.7 or more, and may be, for example, a chromium film. In order to prevent the generation of stray light during exposure, anti-reflection films may be laminated and formed on both sides of the first light-shielding film 11.
In the pattern formation region A, a region where the first light-shielding film 11 is not formed is a light-transmitting portion 12 that transmits light. In this embodiment, an example will be described in which a circular first light-shielding film 11 is formed in one pattern formation region A. As shown in FIG. 1 , the photomask 10 has alignment marks 4 formed at the four corners of the transparent substrate 2 as a reference for positioning the photomask 10 when the first light-shielding film 11 is patterned on the photomask 10.

Figure 3 is a diagram showing a portion of a pattern to be corrected by the pattern correction method of this embodiment. In this embodiment, as shown in Figure 3, an example of correcting a pattern to form a new light-shielding portion in region D2 adjacent to the inside of the circle formed by the first light-shielding film 11, and in region D3 located in the center of the circle and not adjacent to the first light-shielding film 11 will be described. Note that, in this embodiment, one pattern formation region A will be described, but the patterns of the other pattern formation regions A will also be corrected as necessary.

Figure 4 is a flow chart showing an example of a pattern repair method in this embodiment. Figure 5 is a diagram for explaining the pattern repair method in this embodiment. Each diagram shown in Figure 5 is a cross-sectional view cut by a plane that passes through the center of the circle formed by the first light-shielding film 11 and is perpendicular to the surface of the transparent substrate 2. As shown in Figures 4 and 5, in the pattern repair method in this embodiment, first, a photomask 10 is prepared on the transparent substrate 2 on which a first pattern has already been formed by the first light-shielding film 11 (step S1).

Next, a second light-shielding film 21 (second pattern forming portion) containing a material different from the first material (hereinafter referred to as the second material) is formed on the entire surface of the photomask 10 on which the first pattern is formed (step S2, film forming step). In this specification, a member used when correcting a pattern in the pattern correction method of the present invention and used as a pattern of the photomask after correction is referred to as a "second pattern forming portion". The second light-shielding film 21 is formed by, for example, a sputtering method, a vapor deposition method, or the like.
Thereafter, a photoresist film 22 is formed on the entire surface of the photomask 10 including the second light-shielding film 21 (step S3, photoresist film forming process). In other words, the photoresist film 22 is formed on the surface of the photomask 10 so as to cover the entire surface of the second light-shielding film 21. The photoresist film 22 is formed, for example, by a coating method, a spray method, or the like. The second material is a material having a solubility in a predetermined etching solution different from that of the first material. In this specification, a material having a different solubility in a predetermined etching solution is referred to as a material having selective etching properties. For example, when the first light-shielding film 11 is made of a Cr film, a Ni film, a Ti film, a MoSi film, or the like having selective etching properties with respect to the Cr film can be used as the second light-shielding film 21.

Next, a photoresist pattern is formed by drawing on the photoresist film 22 using a drawing device and then developing (step S4, pattern formation process). Specifically, the photoresist pattern is formed so that only the second light-shielding film 21 in the areas corresponding to areas D2 and D3 shown in FIG. 3 is not removed in the first removal process described below. Development is performed by a paddle method, a dipping method, a spray method, a spin method, or the like.

In step S4 in this embodiment, the photomask 10 is positioned using the alignment mark 4, which is formed on the transparent substrate 2 of the photomask 10 at the same time as the first pattern is formed by the first light-shielding film 11, as a reference, and then drawing is performed by the drawing device. In other words, drawing is performed on the photoresist film 22 by the drawing device using the alignment mark 4 as a reference. This makes it possible to control the position of the newly added light-shielding portion with high precision. Note that if precision in the position of the additional light-shielding portion is not required, there is no need to position the photomask 10 using the alignment mark 4.

Next, using the photoresist pattern formed in step S4 as a mask, a portion of the second light-shielding film 21 is removed (step S5, first removal step). In step S5, an etching solution that dissolves the second material but not the first material is used. As a result, in areas where the photoresist mask does not exist, the first light-shielding film 11 is not removed, and only the second light-shielding film 21 is removed. As a result, additional patterning can be performed using the second light-shielding film 21 while leaving the first light-shielding film 11 originally formed on the photomask 10. The etching that removes a portion of the second light-shielding film 21 may be performed using dry etching.

Finally, the remaining photoresist film 22 is removed (step S6). This makes it possible to produce a photomask in which a new light-shielding portion is added by the second light-shielding film 21. The photoresist film 22 can be removed by, for example, a paddle method, an ashing method, or by immersion in a resist stripper.

Figure 6 is a diagram showing the pattern formation region A after it has been corrected by the pattern correction method of this embodiment. As shown in Figure 6, in the pattern formation region A after the pattern correction, the second light-shielding film 21 is formed in the region D2 and the region D3 shown in Figure 3. By forming the second light-shielding film 21 in the region D2, it is possible to increase the area of the light-shielding region formed by the first light-shielding film 11 before the pattern correction. In other words, it is possible to increase the width of the light-shielding region formed by the first light-shielding film 11 when the photomask 10 is viewed in a plan view. In addition, by forming the second light-shielding film 21 in the region D3, an additional light-shielding region can be formed.

As described above, in the pattern correction method of this embodiment, the second light-shielding film 21, which has a selective etching property different from that of the first light-shielding film 11, is formed on the entire surface of the existing photomask 10, and the second light-shielding film 21 is patterned by photolithography. With this configuration, the second light-shielding film 21 can be additionally patterned on the entire surface of the photomask 10. In other words, the pattern correction method of this embodiment can perform large-scale pattern correction at once. As a result, pattern correction can be performed in a short time on the pattern of a photomask on which a pattern has already been formed.

Furthermore, with the pattern correction method of this embodiment, there is no risk of film peeling occurring when using CVD such as the technology of Patent Document 1. Also, when using CVD, the laser is irradiated to areas other than the desired area, resulting in the formation of light-shielding portions in areas other than the desired area, and so it is necessary to remove the light-shielding portions while shaping them. In contrast, with the pattern correction method of this embodiment, a drawing device is used to pattern the second light-shielding film 21, so patterns can be added with high precision and there is no need to remove unnecessary light-shielding portions.

In the pattern correction method of this embodiment, in step S4 (pattern formation process), the photomask 10 is positioned using the alignment mark 4 as a reference, and then drawing is performed by the drawing device. However, there are cases where the alignment mark 4 is not formed on the photomask 10. In this case, the photomask 10 may be positioned as follows.

First, prior to step S3 (photoresist film formation process), an alignment mark is created on the second light-shielding film 21. Then, the positional relationship and inclination deviation between the created alignment mark and the target pattern originally formed on the unmodified photomask 10 are calculated, and the drawing position by the drawing device in step S4 is corrected based on the positional relationship and deviation. The target pattern is not particularly limited as long as it is a pattern whose position formed on the unmodified photomask 10 is known, and for example, an alignment mark for transfer exposure, a mark for measuring long dimensions, etc. can be used.

With this configuration, even if the alignment mark 4 is not formed on the photomask 10, the newly created alignment mark can be used to correct the position of the drawing by the drawing device, so that an additional pattern can be formed with high precision.

The photomask repaired by the pattern repair method of this embodiment is a photomask in which a new pattern has been added to a photomask in which a first pattern has already been formed on a transparent substrate 2 by a first light-shielding film 11, and has (1) the first pattern, (2) a pattern of a light-shielding region (second pattern) formed by a second light-shielding film 21 containing a second material different from the first material, which is a pattern formed so as to be adjacent to the first pattern when the photomask is viewed in a planar view on the transparent substrate 2, and (3) a pattern (second pattern) formed by a second light-shielding film 21 containing the second material, which is a pattern formed so as not to be adjacent to the first pattern when the photomask is viewed in a planar view.

<Modification 1>
In the first embodiment, a pattern correction method for forming a new light-shielding portion by the second light-shielding film 21 on a photomask on which a first pattern has already been formed by the first light-shielding film 11 has been described, but the present invention is not limited to this. In one aspect of the present invention, the method can be applied to a photomask on which a first pattern is formed by a film other than a light-shielding film. Details will be described with reference to FIGS. 7 to 10.

Figure 7 is an enlarged view of one pattern formation region A in the photomask 10 that is the subject of pattern correction in this modified example. Figure 8 is a cross-sectional view taken along line A-A in Figure 7. The photomask 10 that is the subject of correction in this modified example is a top-type photomask. Figure 9 is a view showing the pattern formation region A after the pattern has been corrected using the pattern correction method of this modified example. Figure 10 is a cross-sectional view taken along line B-B in Figure 9.

As shown in Figs. 7 and 8, the photomask 10 to be subjected to pattern correction in this modified example has a pattern (first pattern) formed in the pattern forming region A by the first light-shielding film 11 as the first pattern forming portion and the semi-transparent film 13 that transmits a part of the irradiated light. More specifically, as shown in Fig. 8, the first light-shielding film 11 is formed in a part of the pattern forming region A, and the semi-transparent film 13 is formed in the layer on the opposite side of the first light-shielding film 11 from the transparent substrate 2 side, and in a part of the region of the pattern forming region A where the first light-shielding film 11 is not formed. In other words, the semi-transparent film 13 is formed in a part of the pattern forming region A, and the first light-shielding film 11 is disposed in a part between the semi-transparent film 13 and the transparent substrate 2. With this configuration, the photomask 10 to be subjected to pattern correction is a half-tone mask in which the region where the semi-transparent film 13 and the first light-shielding film 11 overlap is a light-shielding region when the photomask 10 is viewed in a plane, and the region where only the semi-transparent film 13 is a semi-transparent region.

The first light-shielding film 11 and the semi-transparent film 13 are made of the same metal-based material. In other words, the first light-shielding film 11 and the semi-transparent film 13 are made of a material containing the same metal. For example, the first light-shielding film 11 is made of chromium, chromium oxide, etc., and the semi-transparent film 13 is made of chromium, chromium oxide, etc.

Next, a method for correcting a pattern on the photomask 10 having the above configuration will be described. First, a second light-shielding film 21 made of a material (second material) containing a metal different from the metal contained in both the materials constituting the first light-shielding film 11 and the semi-transparent film 13 is formed on the surface of the photomask 10 on which the first pattern is formed (film formation process).

Next, a photoresist film is formed on the entire surface of the photomask 10 including the second light-shielding film 21 (photoresist film formation process). In other words, a photoresist film is formed on the surface of the photomask 10 so as to cover the entire surface of the second light-shielding film 21.

Next, a photoresist pattern is formed by drawing on the photoresist film using a drawing device and then developing it (pattern formation process). Specifically, the photoresist pattern is formed so that only the second light-shielding film 21 in the area corresponding to the area where a new light-shielding area is to be added is not removed in the first removal process described below.

Next, using the formed photoresist pattern as a mask, a portion of the second light-shielding film 21 is removed (first removal process). In the first removal process, an etching solution is used that dissolves the second material without dissolving the materials that make up the first light-shielding film 11 and the semi-transparent film 13. This causes only the second light-shielding film 21 to be etched and removed. Finally, the remaining photoresist film is removed.

As a result, as shown in Figures 9 and 10, a photomask can be produced in which the first pattern originally formed on the photomask 10 by the first light-shielding film 11 and the semi-transparent film 13 remains, while a new light-shielding region is added by the second light-shielding film 21.

Figure 11 is a diagram showing another example of the pattern formation region A after the pattern has been corrected by the pattern correction method of this modified example. As shown in Figure 11, in one aspect of the present invention, the second light-shielding film 21 may be formed so that a portion of the second light-shielding film 21 overlaps a portion of the first pattern (more specifically, a portion of the region of the first pattern in which the first light-shielding film 11 is formed) when the photomask 10 is viewed in plan. This allows the shape of the light-shielding region in the photomask 10 to be changed.

Fig. 12 is a diagram showing yet another example of the pattern formation region A after the pattern has been corrected by the pattern correction method of this modified example. As shown in Fig. 12, in one aspect of the present invention, the second light-shielding film 21 may be formed so as to include the entire region of the first pattern formed by the first light-shielding film 11 and the semi-transparent film 13 when the photomask 10 is viewed in plan. This makes it possible to increase the area of the light-shielding region in the photomask 10. However, in this case, the semi-transparent effect of the photomask 10 before the correction is lost.
In this modified example, a method for modifying a pattern on a photomask in which a pattern (first pattern) is formed by a first light-shielding film 11 and a semi-transparent film 13 as a first pattern forming portion has been described. However, in one aspect of the present invention, pattern modification may also be performed in a similar manner on a photomask in which a phase shift film is used instead of the first light-shielding film 11.

<Modification 2>
The above-described pattern correction methods can also be applied to a photomask in which the first pattern is formed by a phase shift film. The phase shift film is a semi-transparent film with a transmittance of about 1 to 15% and an effect of inverting (or shifting) the phase, and the resolution is improved by the phase shift effect. However, as in the example shown in FIG. 12, if the second light-shielding film 21 is formed so as to include the entire area of the first pattern formed by the phase shift film when the photomask 10 is viewed in plan, the phase shift effect of the photomask 10 before correction disappears.

When making corrections to the photomask 10 in which the first pattern is formed by a phase shift film, the corrections may be made using a phase shift film instead of the second light-shielding film 21. This allows the shape of the area having the phase shift effect to be changed. However, as in the example shown in FIG. 12, if the phase shift film is formed so as to include the entire area of the first pattern formed by the phase shift film when the photomask 10 is viewed in a plane, the phase shift effect disappears in the area where the phase shift film overlaps when the photomask 10 is viewed in a plane, resulting in a photomask in which the phase shift effect is obtained only in the area where only the newly formed phase shift film exists (i.e., an edge-emphasizing photomask).

<Modification 3>
In the first modification, a method for correcting a pattern of a top-type half-tone mask has been described, but the present invention is not limited thereto. The pattern correction method according to one aspect of the present invention can also be applied to a bottom-type half-tone mask. Details will be described with reference to FIGS.

Figure 13 is an enlarged view of one pattern formation area A on the photomask 10 that is the subject of pattern correction in this modified example. Figure 14 is a cross-sectional view taken along line C-C in Figure 13. Figure 15 is a view showing the pattern formation area A after the pattern has been corrected by the pattern correction method of this modified example. Figure 16 is a cross-sectional view taken along line E-E in Figure 15.

As shown in Figs. 13 and 14, the photomask 10 to be subjected to pattern correction in this modified example has a pattern (first pattern) formed in the pattern forming area A by a first light-shielding film 11 as a first pattern forming part and a semi-transparent film 13 that transmits a part of the irradiated light. More specifically, as shown in Fig. 14, the semi-transparent film 13 is formed in a part of the pattern forming area A, and an etching stopper film 14 and a first light-shielding film 11 are laminated in this order on a part of the layer on the opposite side of the semi-transparent film 13 from the transparent substrate 2 side. Due to this configuration, the photomask 10 to be subjected to pattern correction in this modified example is a half-tone mask in which the area where the semi-transparent film 13 and the first light-shielding film 11 overlap is a light-shielding area when the photomask 10 is viewed in plan, and the area where only the semi-transparent film 13 is a semi-transparent area. The semi-transparent film 13 and the first light-shielding film 11 are made of the same metal-based material.

Next, a method for correcting a pattern on the photomask 10 having the above configuration will be described. First, a second light-shielding film 21 made of a material (second material) containing a metal different from the metal contained in both the materials constituting the first light-shielding film 11 and the semi-transparent film 13 is formed on the surface of the photomask 10 on which the first pattern is formed (film formation process).

Next, a photoresist film is formed on the entire surface of the photomask 10 including the second light-shielding film 21 (photoresist film formation process). In other words, a photoresist film is formed on the surface of the photomask 10 so as to cover the entire surface of the second light-shielding film 21.

Next, a photoresist pattern is formed by drawing on the photoresist film using a drawing device and then developing it (pattern formation process). Specifically, the photoresist pattern is formed so that only the second light-shielding film 21 in the area corresponding to the area where a new light-shielding area is to be added is not removed in the first removal process described below.

Next, a portion of the second light-shielding film 21 is removed using the formed photoresist pattern as a mask (first removal process). In the first removal process, an etching solution is used that dissolves the second material but not the materials constituting the first light-shielding film 11 and the semi-transparent film 13. This etches and removes only the second light-shielding film 21. Finally, the remaining photoresist film is removed. As a result, as shown in Figures 15 and 16, a photomask can be produced in which a new light-shielding region is added by the second light-shielding film 21 while leaving the first pattern originally formed on the photomask 10 by the first light-shielding film 11 and the semi-transparent film 13.

In this modification, a method for correcting a pattern on a photomask in which a pattern (first pattern) is formed by the first light-shielding film 11 and the semi-transmitting film 13 as the first pattern forming portion has been described, but in one aspect of the present invention, pattern correction may also be performed on a photomask using a phase shift film instead of the first light-shielding film 11. The phase shift film has a function of shifting the phase of the exposure light, and has a property that the phase of the exposure light is inverted by a single film (i.e., the phase shift angle is approximately 180°). However, "approximately 180°" here means 180°±20°, and refers to a phase difference of the exposure light at which the interference effect of the exposure light is sufficiently obtained.
In one embodiment of the present invention, when performing pattern correction on a photomask using a phase shift film instead of the first light-shielding film 11, a semi-transparent film that transmits a portion of the exposure light may be used instead of the second light-shielding film 21. In this case, it is preferable that the transmittance of the phase shift film is 3 to 15%. In one embodiment of the present invention, when performing pattern correction on a photomask using a semi-transparent film instead of the first light-shielding film 11, a phase shift film may be used instead of the second light-shielding film 21. In this case, it is preferable that the semi-transparent film has a transmittance of 10 to 70% for the exposure light and a phase shift angle of 0.1° to 20°.

Next, a pattern correction method for adding a new light-shielding region to the photomask 10, which is a bottom-type half-tone mask shown in Figs. 13 and 14, and correcting a part of the region that was originally a light-shielding region due to the first light-shielding film 11 to be a semi-transmitting region will be described with reference to Figs. 17 and 18. Figs. 17 and 18 are diagrams for explaining the pattern correction method. Each of the views shown in Figs. 17 and 18 corresponds to the cross-sectional view taken along the line D-D shown in Fig. 13.

In this pattern correction method, as shown in FIG. 17, a photomask 10 is prepared in which a pattern (first pattern) is formed on a transparent substrate 2 by a first light-shielding film 11, a semi-transparent film 13, and an etching stopper film 14 (step S11). Next, a second light-shielding film 21 (second pattern forming portion) containing the second material is formed on the surface of the photomask 10 on which the first pattern is formed (step S12, film formation process). After that, a photoresist film 22 is formed on the entire surface of the photomask 10 including the second light-shielding film 21 (step S13, photoresist film formation process). In other words, the photoresist film 22 is formed on the surface of the photomask 10 so as to cover the entire surface of the second light-shielding film 21.

Next, a photoresist pattern is formed by drawing on the photoresist film 22 using a drawing device and then developing it (step S14, pattern formation process). Specifically, the photoresist pattern is formed so that only the second light-shielding film 21 corresponding to the area to be changed to a new light-shielding area is not removed in the first removal process described below.

Next, using the photoresist pattern formed in step S14 as a mask, a portion of the second light-shielding film 21 is removed (step S15, first removal step). In step S15, an etching solution is used that dissolves the second material but not the materials that make up the first light-shielding film 11 and the semi-transparent film 13. This causes only the second light-shielding film 21 to be etched and removed.

Next, as shown in FIG. 18, a portion of the first light-shielding film 11 is removed using the photoresist pattern formed in step S14 as a mask (step S16). After that, a portion of the etching stopper film 14 is removed using the photoresist pattern formed in step S14 as a mask (step S17). Finally, the remaining photoresist film 22 is removed (step S19).

By using the above method, a new light-shielding area is added by the second light-shielding film 21, and part of the area that was originally a light-shielding area by the first light-shielding film 11 when the photomask is viewed in a plan view is changed to a semi-transparent area by exposing the semi-transparent film 13.

<Modification 4>
In the third modification, a method for correcting a pattern of a bottom-type halftone mask composed of a semi-transmitting film 13 and a first light-shielding film 11, which are composed of the same metal-based material, and an etching stopper film 14 disposed between the semi-transmitting film 13 and the first light-shielding film 11, has been described, but the present invention is not limited thereto. The pattern correction method according to one aspect of the present invention can also be applied to bottom-type halftone masks having other configurations. Details will be described with reference to FIGS. 19 to 22.

Figure 19 is an enlarged view of one pattern formation region A in the photomask 10 that is the subject of pattern correction in this modified example. Figure 20 is a cross-sectional view taken along line F-F in Figure 19. Figure 21 is a view showing the pattern formation region A after the pattern has been corrected by the pattern correction method of this modified example. Figure 22 is a cross-sectional view taken along line G-G in Figure 21.

As shown in Figs. 19 and 20, the photomask 10 to be subjected to pattern correction in this modified example has a pattern (first pattern) formed by a first light-shielding film 11 as a first pattern forming portion and a semi-transparent film 13 that transmits a part of the irradiated light. More specifically, as shown in Fig. 20, the semi-transparent film 13 is formed in a part of the pattern forming area A, and the first light-shielding film 11 is laminated on the layer on the opposite side of the semi-transparent film 13 from the transparent substrate 2 side. Due to this configuration, the photomask 10 to be subjected to pattern correction in this modified example is a half-tone mask in which the area where the semi-transparent film 13 and the first light-shielding film 11 overlap is a light-shielding area when the photomask 10 is viewed in plan, and the area where only the semi-transparent film 13 is a semi-transparent area. The first light-shielding film 11 and the semi-transparent film 13 are made of different metal-based materials. For example, the first light-shielding film 11 is made of a Cr-based material, and the semi-transparent film 13 is made of MoSi as a third material.

Next, a method for correcting the pattern of the photomask 10 having the above configuration will be described. First, on the surface of the photomask 10 on which the first pattern is formed, a second light-shielding film 21 (second pattern forming portion) made of a material containing a metal different from the metal contained in the material making up the first light-shielding film 11 and the semi-transparent film 13 is formed (film formation process). For example, the first light-shielding film 11 is made of a Cr-based material, the semi-transparent film 13 is made of MoSi, and the second light-shielding film 21 is made of Ni.

After that, a photoresist film is formed on the entire surface of the photomask 10 including the second light-shielding film 21 (photoresist film formation process). In other words, a photoresist film is formed on the surface of the photomask 10 so as to cover the entire surface of the second light-shielding film 21.

Next, a photoresist pattern is formed by drawing on the photoresist film using a drawing device and then developing it (pattern formation process). Specifically, the photoresist pattern is formed so that only the second light-shielding film 21 in the area corresponding to the area where a new light-shielding area is to be added is not removed in the first removal process described below.

Next, a portion of the second light-shielding film 21 is removed using the formed photoresist pattern as a mask (first removal process). In the first removal process, only the second light-shielding film 21 is etched and removed by using an etching solution that dissolves the second material but does not dissolve the materials that constitute the first light-shielding film 11 and the semi-transparent film 13. Finally, the remaining photoresist film is removed.

As a result, as shown in Figures 21 and 22, a photomask can be produced in which the first pattern originally formed on the photomask 10 by the first light-shielding film 11 and the semi-transparent film 13 remains, while a new light-shielding region is added by the second light-shielding film 21.

<Modification 5>
In this modification, a pattern correction method will be described in which the light-shielding region described in the first embodiment is added and the light-shielding region originally formed on the photomask is reduced in size. Fig. 23 is an enlarged view of one pattern formation region A on the photomask 10 that is the target of pattern correction in this modification. Figs. 24 and 25 are views for explaining the pattern correction method in this modification. Each of the views shown in Figs. 24 and 25 corresponds to the cross-sectional view taken along the line H-H shown in Fig. 23.

As shown in FIG. 23, in the pattern formation region A of the photomask 10 to be repaired in this modified example, a T-shaped first pattern is formed by the first light-shielding film 11.

In the pattern correction method of this modified example, as shown in FIG. 24, a photomask 10 is prepared in which a pattern (first pattern) is formed on a transparent substrate 2 by a first light-shielding film 11 (step S21). Next, a second light-shielding film 21 made of a material (second material) containing a metal different from the metal contained in the material constituting the first light-shielding film 11 is formed on the surface of the photomask 10 on which the first pattern is formed (step S22, film formation process). After that, a photoresist film 22 is formed on the entire surface of the photomask 10 including the second light-shielding film 21 (step S23, photoresist film formation process). In other words, the photoresist film 22 is formed on the surface of the photomask 10 so as to cover the entire surface of the second light-shielding film 21.

Next, a photoresist pattern is formed by drawing on the photoresist film 22 with a drawing device and then developing (step S24, pattern formation process). Specifically, the photoresist pattern is formed so that only the photoresist film 22 remains in the area where a new light-shielding area is to be added and in the area of the light-shielding area by the first light-shielding film 11 that is to remain as a light-shielding area even after the pattern correction. In this modified example, the photoresist film 22 is removed in the area that is originally a light-shielding area by the first light-shielding film 11 and is to be changed to a light-transmitting area. In other words, the photoresist pattern is formed so that, when the photomask 10 is viewed in plan, at least the first light-shielding film 11 and a part of the photoresist film 22 that overlaps with the second light-shielding film 21 formed in step S22 are removed.

Next, using the photoresist pattern formed in step S24 as a mask, a portion of the second light-shielding film 21 is removed (step S25, first removal step). In step S25, an etching solution that dissolves the second material but not the material that constitutes the first light-shielding film 11 is used, so that only the second light-shielding film 21 is etched and removed.

Next, as shown in FIG. 25, a portion of the first light-shielding film 11 is removed using the photoresist pattern formed in step S24 as a mask (step S26, second removal step). Finally, the remaining photoresist film 22 is removed (step S27).

Figure 26 is a plan view of the photomask after repair using the above method. In Figure 26, the first light-shielding film 11 before repair is indicated by a dashed line. As shown in Figure 26, by repairing using the above method, a new light-shielding region is added by the second light-shielding film 21, and the light-shielding region originally formed by the first light-shielding film 11 can be reduced when the photomask is viewed in plan.

The pattern correction method in this modified example can also be applied when the first pattern is composed of a phase shift film.

<Modification 6>
In this modification, a pattern correction method for correcting the top-type photomask described in modification 1 by adding a light-shielding region and correcting the first pattern originally formed on the photomask by reducing its size will be described with reference to Figures 27 and 28. Figures 27 and 28 are diagrams for explaining the pattern correction method in this modification.

In the pattern correction method of this modified example, as shown in FIG. 27, first, a photomask 10 is prepared in which a pattern (first pattern) is formed on a transparent substrate 2 by a first light-shielding film 11 and a semi-transparent film 13 (step S31). Next, a second light-shielding film 21 made of a material (second material) containing a metal different from the metal contained in both the materials constituting the first light-shielding film 11 and the semi-transparent film 13 is formed on the surface of the photomask 10 on which the first pattern is formed (step S32, film formation process). After that, a photoresist film 22 is formed on the entire surface of the photomask 10 including the second light-shielding film 21 (step S33, photoresist film formation process). In other words, the photoresist film 22 is formed on the surface of the photomask 10 so as to cover the entire surface of the second light-shielding film 21.

Next, a photoresist pattern is formed by drawing on the photoresist film 22 with a drawing device and then developing it (step S34, pattern formation process). Specifically, the photoresist pattern is formed so that only the photoresist film 22 corresponding to the area where a new light-shielding area is to be added, the area of the light-shielding area by the first light-shielding film 11 that is to remain as a light-shielding area even after the pattern correction, and the area that is a semi-transparent area by the semi-transparent film 13 and is to be changed to a light-shielding area remains. In this modified example, the photoresist film 22 is removed from the area that is originally a light-shielding area or a semi-transparent area by the first light-shielding film 11 or the semi-transparent film 13 and is to be changed to a transparent area. In other words, when the photomask 10 is viewed in plan, the photoresist pattern is formed so that at least the first light-shielding film 11, the semi-transparent film 13, and a part of the photoresist film 22 that overlaps with the second light-shielding film 21 formed in step S32 are removed.

Next, using the photoresist pattern formed in step S34 as a mask, a portion of the second light-shielding film 21 is removed (step S35, first removal step). In step S35, an etching solution is used that dissolves the second material but does not dissolve the materials that make up the first light-shielding film 11 and the semi-transparent film 13. This causes only the second light-shielding film 21 to be etched and removed.

28, using the photoresist pattern formed in step S34 as a mask, a portion of the semi-transparent film 13 and a portion of the first light-shielding film 11 are removed (step S36, second removal step, third removal step). Finally, the remaining photoresist film 22 is removed (step S37). Note that in this embodiment, a portion of the semi-transparent film 13 and a portion of the first light-shielding film 11 are removed in one step, but in one aspect of the present invention, the step of removing a portion of the semi-transparent film 13 (second removal step) and the step of removing the first light-shielding film 11 (third removal step) may be performed separately.

By using the above method, a new light-shielding area can be added by the second light-shielding film 21, the light-shielding area originally formed by the first light-shielding film 11 can be reduced when the photomask is viewed in plan, and part of the semi-transparent area formed by the semi-transparent film 13 can be changed to a light-shielding area. However, in this modified example, the semi-transparent effect of the photomask 10 before the modification is lost.

<Modification 7>
In this modified example, a pattern modification method is described with reference to Figures 29 and 30, in which a modification is made to add a light-shielding area to the bottom-type photomask described in modified example 3, and a modification is made to reduce the size of the first pattern originally formed on the photomask.

In the pattern correction method of this modified example, as shown in FIG. 29, first, a photomask 10 is prepared in which a pattern (first pattern) is formed on a transparent substrate 2 by a first light-shielding film 11, a semi-transparent film 13, and an etching stopper film 14 (step S41). Next, a second light-shielding film 21 made of a material (second material) containing a metal different from the metal contained in both the materials constituting the first light-shielding film 11 and the semi-transparent film 13 is formed on the surface of the photomask 10 on which the first pattern is formed (step S42, film formation process). After that, a photoresist film 22 is formed on the entire surface of the photomask 10 including the second light-shielding film 21 (step S43, photoresist film formation process). In other words, a photoresist film 22 is formed on the surface of the photomask 10 so as to cover the entire surface of the second light-shielding film 21.

Next, a photoresist pattern is formed by drawing on the photoresist film 22 with a drawing device and then developing (step S44, pattern formation process). Specifically, the photoresist pattern is formed so that only the photoresist film 22 corresponding to the area where a new light-shielding area is to be added, the area of the light-shielding area by the first light-shielding film 11 that is to remain as a light-shielding area even after the pattern correction, and the area that is a semi-transparent area by the semi-transparent film 13 and is to be changed to a light-shielding area remains. In this modified example, the photoresist film 22 is removed from the area that is originally a light-shielding area or a semi-transparent area by the first light-shielding film 11 or the semi-transparent film 13 and is to be changed to a transparent area. In other words, when the photomask 10 is viewed in plan, the photoresist pattern is formed so that at least the first light-shielding film 11, the semi-transparent film 13, and a part of the photoresist film 22 that overlaps with the second light-shielding film 21 formed in step S42 are removed.

Next, using the photoresist pattern formed in step S44 as a mask, a portion of the second light-shielding film 21 is removed (step S45, first removal step). In step S45, an etching solution is used that dissolves the second material but does not dissolve the materials that make up the first light-shielding film 11 and the semi-transparent film 13. This causes only the second light-shielding film 21 to be etched and removed.

Next, as shown in FIG. 30, a portion of the first light-shielding film 11 is removed using the photoresist pattern formed in step S44 as a mask (step S46, second removal step). Next, a portion of the etching stopper film 14 is removed using the photoresist pattern formed in step S44 as a mask (step S47, third removal step). Next, a portion of the semi-transparent film 13 is removed using the photoresist pattern formed in step S44 as a mask (step S48, fourth removal step). Finally, the remaining photoresist film 22 is removed (step S49).

By using the above method, a new light-shielding area can be added by the second light-shielding film 21, the light-shielding area originally formed by the first light-shielding film 11 can be reduced when the photomask is viewed in plan, and part of the semi-transparent area formed by the semi-transparent film 13 can be changed to a light-shielding area. However, in this modified example, the semi-transparent effect of the photomask 10 before the modification is lost.

<Modification 8>
In this modified example, a pattern modification method is described with reference to Figures 31 and 32, in which a modification is made to add a light-shielding area to the bottom-type photomask described in modified example 4, and a modification is made to reduce the size of the first pattern originally formed on the photomask.

In the pattern correction method of this modified example, as shown in FIG. 31, a photomask 10 is prepared in which a pattern (first pattern) is formed on a transparent substrate 2 by a first light-shielding film 11 and a semi-transparent film 13 (step S51). Next, a second light-shielding film 21 (second pattern forming portion) made of a material containing a metal different from the metal contained in the material constituting the first light-shielding film 11 and the semi-transparent film 13 is formed on the surface of the photomask 10 on which the first pattern is formed (step S52, film formation process). For example, the first light-shielding film 11 may be made of a Cr-based material, the semi-transparent film 13 may be made of MoSi, and the second light-shielding film 21 may be made of Ni. Then, a photoresist film 22 is formed on the entire surface of the photomask 10 including the second light-shielding film 21 (step S53, photoresist film formation process). In other words, a photoresist film 22 is formed on the surface of the photomask 10 so as to cover the entire surface of the second light-shielding film 21.

Next, a photoresist pattern is formed by drawing on the photoresist film 22 with a drawing device and then developing (step S54, pattern formation process). Specifically, the photoresist pattern is formed so that only the photoresist film 22 corresponding to the area where a new light-shielding area is to be added, the area of the light-shielding area by the first light-shielding film 11 that is to remain as a light-shielding area even after the pattern correction, and the area that is a semi-transparent area by the semi-transparent film 13 and is to be changed to a light-shielding area remains. In this modified example, the photoresist film 22 is removed from the area that is originally a light-shielding area or a semi-transparent area by the first light-shielding film 11 or the semi-transparent film 13 and is to be changed to a transparent area. In other words, when the photomask 10 is viewed in plan, the photoresist pattern is formed so that at least the first light-shielding film 11, the semi-transparent film 13, and a part of the photoresist film 22 that overlaps with the second light-shielding film 21 formed in step S52 are removed.

Next, using the photoresist pattern formed in step S54 as a mask, a portion of the second light-shielding film 21 is removed (step S55, first removal step). In step S55, an etching solution that dissolves the second material but does not dissolve the materials that make up the first light-shielding film 11 and the semi-transparent film 13 is used, so that only the second light-shielding film 21 is etched and removed.

Next, as shown in FIG. 32, a portion of the first light-shielding film 11 is removed using the photoresist pattern formed in step S54 as a mask (step S56, second removal step). Next, a portion of the semi-transparent film 13 is removed using the photoresist pattern formed in step S54 as a mask (step S57, third removal step). Finally, the remaining photoresist film 22 is removed (step S58).

By using the above method, a new light-shielding area can be added by the second light-shielding film 21, the light-shielding area originally formed by the first light-shielding film 11 can be reduced when the photomask is viewed in a plan view, and part of the semi-transparent area formed by the semi-transparent film 13 can be changed to a light-shielding area. However, in this modified example, the semi-transparent effect of the photomask 10 before the modification is lost.

[Embodiment 2]
Other embodiments of the present invention will be described below. For ease of explanation, the same reference numerals are given to members having the same functions as those described in the above embodiment, and the description thereof will not be repeated.

In the first embodiment, a pattern correction method was described in which a new light-shielding portion is formed by the second light-shielding film 21 on a photomask on which a pattern has already been formed by the first light-shielding film 11. In contrast, the pattern correction method of the present embodiment describes a method of forming a new transparent portion on a photomask on which a pattern has been formed by forming a transparent portion in the light-shielding film.

Figure 33 is a plan view showing the configuration of a photomask 30 as an example of a photomask whose pattern is to be corrected by the pattern correction method of this embodiment. Figure 34 is an enlarged view of region D4 shown in Figure 33, and is an enlarged view of one pattern formation region A.

As shown in FIG. 33, the photomask 30 has a plurality of pattern formation regions A formed on a transparent substrate 2. As shown in FIG. 34, in the pattern formation region A, a light-shielding film 41 is formed on the transparent substrate 2, and a light-transmitting portion 42 is patterned in the light-shielding film 41. In this embodiment, an example in which a circular light-transmitting portion 42 is formed in one pattern formation region A will be described.

Figure 35 is a diagram showing a portion of a pattern to be corrected using the pattern correction method of this embodiment. In this embodiment, an example is described in which a pattern is corrected to form a new light-transmitting portion in region D5 located at the center of a circle formed by light-transmitting portion 42, as shown in Figure 35.

Figure 36 is a flow chart showing an example of a pattern correction method in this embodiment. Figure 37 is a diagram for explaining the pattern correction method in this embodiment. As shown in Figures 36 and 37, in the pattern correction method in this embodiment, first, a photomask 30 is prepared in which a pattern has already been formed by patterning a light-transmitting portion 42 in a light-shielding film 41 (step S11).

Next, a photoresist film 51 is formed on the surface of the photomask 30 on which the pattern is formed (step S12). Next, a drawing device is used to draw on the photoresist film 51, and then the photoresist pattern is formed by developing the photoresist film 51 (step S13). Specifically, the photoresist pattern is formed so that only the light-shielding film 41 corresponding to the region D5 shown in FIG. 35 is removed in step S14, which will be described later.

In this embodiment, in step S13, the photomask 30 is positioned using the alignment marks 4 that have been formed in advance on the transparent substrate 2 of the photomask 30 as a reference, and then drawing is performed by the drawing device. This allows the position of the newly added transparent portion to be controlled with high precision. Note that if precision in the position of the additional transparent portion is not required, there is no need to position the photomask 30 using the alignment marks 4.

Next, using the photoresist pattern formed in step S13 as a mask, a portion of the light-shielding film 41 is removed (step S14). As a result, a new light-transmitting portion 45 can be formed.

Finally, the remaining photoresist film 51 is removed (step S15), thereby making it possible to fabricate a photomask on which a new light transmitting portion 45 is formed in addition to the previously formed light transmitting portion 42.
In the above-described embodiments, the pattern is corrected by using a positive photoresist film, but the present invention is not limited to this. In one aspect of the present invention, the pattern may be corrected by using a negative photoresist film.

The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope of the claims. The technical scope of the present invention also includes embodiments obtained by appropriately combining the technical means disclosed in different embodiments.

2 transparent substrate 4 alignment mark 10 photomask 11 first light-shielding film (first pattern forming portion)
13 Semi-transparent film (first pattern forming portion)
14 Etching stopper film 21 Second light shielding film (second pattern forming portion)
22 Photoresist film

Claims (14)

A pattern repair method for repairing a desired pattern on a photomask on which a pattern has already been formed by a first pattern forming unit containing a first material on a transparent substrate and which has been manufactured as a finished product through a series of manufacturing steps, and on which a transfer exposure alignment mark or a long dimension measurement mark having a known positional relationship with the pattern has been formed, comprising:
a film formation step of forming a second pattern formation portion including a second material different from the first material on the surface of the photomask on which the pattern is formed;
a photoresist film forming step of forming a photoresist film on a surface of the photomask so as to cover an entire surface of the second pattern forming portion;
a pattern forming step of forming a photoresist pattern on the photoresist film by using a drawing device;
a first removal process of removing a part of the second pattern forming portion by using an etching solution that dissolves the second material but not the first material, using the photoresist pattern as a mask;
In the pattern forming step,
The drawing device draws on the photoresist film using a drawing alignment mark that is formed on the transparent substrate at the same time as the pattern is formed by the first pattern forming unit, or
A pattern correction method in which drawing is performed by correcting the drawing position by the drawing device based on the deviation in positional relationship and inclination between a drawing alignment mark created between the film formation process and the photoresist film formation process and a mark different from the drawing alignment mark, which is a transfer exposure alignment mark or a long dimension measurement mark formed on the pattern before correction. changing a function of at least a part of a pattern formed by the first pattern forming unit to a function different from that of the pattern;
The pattern repair method according to claim 1 , wherein the change in the function of the at least a portion of the region includes at least a change from a light blocking function, a semi-transmitting function, a phase shifting function, or a light transmitting function to another function. 3. The pattern modification method according to claim 1, wherein the photoresist pattern is formed in the pattern forming step such that, when the photomask is viewed in a plane, a portion of the second pattern forming portion that was not removed in the first removal step is adjacent to the first pattern forming portion. 3. The pattern correction method according to claim 1, wherein the photoresist pattern is formed in the pattern forming step such that, when the photomask is viewed in a plan view, a portion of the second pattern forming portion that is not removed in the first removal step is not adjacent to the first pattern forming portion. the first pattern formation portion is a first light-shielding film having a light-shielding property,
5. The pattern repair method according to claim 1, wherein the second pattern forming portion is a second light-shielding film having a light-shielding property. In the pattern forming step, the photoresist pattern is formed so as to remove at least a portion of the photoresist film overlapping with the first light-shielding film when the photomask is viewed in a plan view;
6. The pattern repair method according to claim 5 , further comprising, after said first removing step, a second removing step of removing a part of said first light-shielding film by using said photoresist pattern as a mask. the first pattern formation portion includes a semi-transmitting film, and a first light-shielding film or a phase shift film having light-shielding properties, the first light-shielding film being disposed in a portion of an area between the semi-transmitting film and the transparent substrate;
5. The pattern repair method according to claim 1, wherein the second pattern forming portion is a second light-shielding film having a light-shielding property. In the pattern forming step, the photoresist pattern is formed so as to remove at least a portion of the photoresist film overlapping with the first light-shielding film or the phase shift film when the photomask is viewed in plan view;
After the first removal step,
a second removal step of removing a portion of the semi-transparent film using the photoresist pattern as a mask;
8. The pattern repair method according to claim 7 , further comprising a third removing step of removing a part of the first light-shielding film or the phase shift film by using the photoresist pattern as a mask. the first pattern formation portion includes a phase shift film,
5. The pattern repair method according to claim 1, wherein the second pattern formation portion includes a phase shift film or a second light-shielding film having a light-shielding property. In the pattern forming step, the photoresist pattern is formed so as to remove at least a portion of the photoresist film overlapping with the phase shift film when the photomask is viewed in plan view;
10. The pattern repair method according to claim 9 , further comprising, after said first removing step, a second removing step of removing a part of said phase shift film by using said photoresist pattern as a mask. the first pattern formation portion includes a semi-transmitting film or a phase shift film formed on a transparent substrate, and a first light-shielding film having a light-shielding property laminated via an etching stopper film on a partial region of a surface of the semi-transmitting film or the phase shift film opposite to the transparent substrate side,
5. The pattern repair method according to claim 1, wherein the second pattern formation portion includes a second light-shielding film having a light-shielding property. In the pattern forming step, the photoresist pattern is formed so as to remove at least a portion of the photoresist film overlapping with the first light-shielding film when the photomask is viewed in a plan view;
After the first removal step,
a second removal step of removing a portion of the first light-shielding film using the photoresist pattern as a mask;
a third removal step of removing a portion of the etching stopper film using the photoresist pattern as a mask;
12. The pattern repair method according to claim 11 , further comprising a fourth removing step of removing a part of the semi-transparent film or the phase shift film using the photoresist pattern as a mask. The first pattern forming unit is
a semi-transmitting film or a phase shift film formed on the transparent substrate, the third material being different from the first material and the second material;
a first light-shielding film having a light-shielding property, laminated on a partial region of a surface of the semi-transmitting film or the phase shift film opposite to the transparent substrate side;
5. The pattern repair method according to claim 1, wherein the second pattern forming portion is a second light-shielding film having a light-shielding property. In the pattern forming step, the photoresist pattern is formed so as to remove at least a portion of the photoresist film overlapping with the first light-shielding film when the photomask is viewed in a plan view;
After the first removal step,
a second removal step of removing a portion of the first light-shielding film using the photoresist pattern as a mask;
14. The pattern repair method according to claim 13 , further comprising a third removing step of removing a part of the semi-transparent film or the phase shift film using the photoresist pattern as a mask.

Images