JP7510764B2 - Semiconductor device and method for manufacturing the same - Google Patents

Description

This disclosure relates to a semiconductor device and a method for manufacturing a semiconductor device.

One example of a semiconductor device is one in which a driving electrode of a semiconductor element is connected by a linear wire to a conductive member that is electrically connected to an external terminal disposed outside the semiconductor element. In order to supply a large current to the semiconductor device, a configuration has been proposed in which the driving electrode and the conductive member are connected by a band-shaped clip instead of a wire (see, for example, Patent Document 1).

JP 2000-68426 A

The clip is joined to the driving electrode of the semiconductor element by ultrasonic welding. In this case, a large force is applied to the semiconductor element when the clip is joined to the driving electrode, and there is a risk of the semiconductor element being damaged. Such damage to the semiconductor element leads to a decrease in the yield of the semiconductor device and an increase in costs.

The objective of this disclosure is to provide a semiconductor device and a method for manufacturing a semiconductor device that can reduce costs.

A semiconductor device that solves the above problem includes a semiconductor element having a main surface on which a drive electrode is formed, a drive conductor having a drive connection surface facing the same direction as the main surface, and a drive connection member that connects the drive electrode and the drive conductor, the drive connection member having a first connection portion that connects to the drive electrode and a second connection portion that connects to the drive conductor, the first connection portion having a first connection surface that contacts the drive electrode, and the first connection surface being composed of a solder layer.

According to this configuration, the solder layer of the first connection part of the drive connection member comes into contact with the drive electrode of the semiconductor element, and the first connection part is pressed against the semiconductor element and heated to melt the solder layer, thereby joining the first connection part and the drive electrode. In this way, ultrasonic bonding is not required to join the first connection part and the drive electrode, and damage to the semiconductor element due to the bonding between the semiconductor element and the drive connection member can be suppressed. This increases the yield of the semiconductor device, thereby reducing the manufacturing cost of the semiconductor device.

A method for manufacturing a semiconductor device that solves the above problem includes a semiconductor element having a main surface on which a driving electrode is formed, a driving conductor having a driving connection surface facing the same direction as the main surface of the element, and a driving connection member that connects the driving electrode and the driving conductor and has a first connection portion that connects to the driving electrode and a second connection portion that connects to the driving conductor, and the surface of the first connection portion that contacts the driving electrode and the surface of the second connection portion that contacts the driving conductor are each made of a solder layer, and the method includes an electrode joining process of melting the solder layer of the first connection portion to join the first connection portion to the driving electrode, and a conductor joining process of melting the solder layer of the second connection portion to join the second connection portion to the driving conductor.

According to this configuration, the solder layer of the first connection part of the drive connection member comes into contact with the drive electrode of the semiconductor element, and the first connection part is pressed against the semiconductor element and heated to melt the solder layer, thereby joining the first connection part and the drive electrode. In this way, ultrasonic bonding is not required to join the first connection part and the drive electrode, and damage to the semiconductor element due to the bonding between the semiconductor element and the drive connection member can be suppressed. This increases the yield of the semiconductor device, thereby reducing the manufacturing cost of the semiconductor device.

The above-mentioned semiconductor device and manufacturing method for the semiconductor device can reduce costs.

1 is a perspective view of a semiconductor device according to a first embodiment; FIG. 2 is a plan view of the semiconductor device in FIG. FIG. 2 is a side view of the semiconductor device of FIG. 4 is a side view of the semiconductor device of FIG. 1, seen from a direction different from that of FIG. 3; 5 is a side view of the semiconductor device of FIG. 1, seen from a direction different from that of FIG. 3 and FIG. 4; FIG. 2 is a bottom view of the semiconductor device of FIG. 1 . FIG. 2 is a plan view showing an internal structure of the semiconductor device shown in FIG. FIG. 2 is a circuit diagram showing a circuit configuration of the semiconductor device in FIG. Cross-sectional view taken along line 9-9 in Figure 7. FIG. 8 is an enlarged view of a portion of FIG. FIG. 8 is an enlarged view of a portion of FIG. FIG. 8 is an enlarged view of a portion of FIG. Cross-sectional view taken along line 13-13 in Figure 7. FIG. 14 is an enlarged view of a portion of FIG. 13 . FIG. 4 is a cross-sectional view of a portion of the first drive connecting member. FIG. 15 is an enlarged view of a portion of FIG. FIG. 15 is an enlarged view of a portion of FIG. FIG. 8 is an enlarged view of a portion of FIG. FIG. 14 is an enlarged view of a portion of FIG. 13 . 4 is an explanatory diagram showing an example of a process of the manufacturing method of the semiconductor device according to the first embodiment; FIG. 2 is an explanatory diagram showing an example of a process of a manufacturing method of a semiconductor device. FIG. 2 is an explanatory diagram showing an example of a process of a manufacturing method of a semiconductor device. FIG. 13 is a plan view showing an internal structure of a semiconductor device according to a second embodiment. FIG. 24 is an enlarged view of a portion of FIG. 23 . FIG. 24 is an enlarged view of a portion of FIG. 23 . Cross-sectional view of line 26-26 in Figure 23. FIG. 13 is a plan view showing an internal structure of a semiconductor device according to a third embodiment. FIG. 28 is an enlarged view of a portion of FIG. 27 . FIG. 28 is an enlarged view of a portion of FIG. 27 . Cross-sectional view of line 30-30 in Figure 27. FIG. 31 is an enlarged view of a portion of FIG. 30 . FIG. 32 is an enlarged view of a portion of FIG. 31 . FIG. 32 is an enlarged view of a portion of FIG. 31 . FIG. 32 is an enlarged view of a portion of FIG. 31 . FIG. 31 is an enlarged view of a portion of FIG. 30 . An enlarged view of a portion of Figure 35. An enlarged view of a portion of Figure 35. An enlarged view of a portion of Figure 35. FIG. 13 is a perspective view of a semiconductor device according to a fourth embodiment. FIG. 40 is a perspective view showing an internal structure of the semiconductor device of FIG. 39 . FIG. 40 is a plan view of the semiconductor device of FIG. 39 . FIG. 42 is a plan view of the semiconductor device of FIG. 41 . An enlarged view of a portion of Figure 42. FIG. 40 is a side view of the semiconductor device of FIG. 39 . FIG. 40 is a rear view of the semiconductor device of FIG. 39 . 45 is a side view of the semiconductor device of FIG. 39, seen from a direction different from that of FIG. 44. 47 is a side view of the semiconductor device of FIG. 39, seen from a direction different from that of FIGS. 44 and 46. Cross-sectional view of line 48-48 in Figure 42. An enlarged view of a portion of Figure 48. Cross-sectional view of line 50-50 in Figure 42. An enlarged view of a portion of Figure 50. FIG. 13 is a perspective view of a semiconductor device according to a fifth embodiment. FIG. 53 is a perspective view showing the internal structure of the semiconductor device of FIG. 52 . FIG. 54 is a plan view of the semiconductor device of FIG. 53. Cross-sectional view of line 55-55 in Figure 54. An enlarged view of a portion of Figure 54. An enlarged view of a portion of Figure 54. FIG. 13 is a perspective view showing an internal structure of a semiconductor device according to a sixth embodiment. FIG. 59 is a plan view of the semiconductor device of FIG. 58. Cross-sectional view of line 60-60 in Figure 59. FIG. 1 is a circuit diagram of a three-phase AC inverter to which the semiconductor device is applied. FIG. 1 is a circuit diagram of a three-phase AC inverter to which the semiconductor device is applied. FIG. 13 is a plan view showing an internal structure of a semiconductor device according to a modified example. FIG. 13 is a plan view showing an internal structure of a semiconductor device according to a modified example. Cross-sectional view of line 65-65 in Figure 64. FIG. 13 is a plan view showing an internal structure of a semiconductor device according to a modified example. Cross-sectional view of line 67-67 in Figure 66. FIG. 13 is a plan view showing an internal structure of a semiconductor device according to a modified example. Cross-sectional view of line 69-69 in Figure 68. FIG. 13 is a plan view showing an internal structure of a semiconductor device according to a modified example. FIG. 13 is a perspective view showing an internal structure of a semiconductor device according to a modified example. Cross-sectional view of line 72-72 in Figure 71. 13 is a cross-sectional view showing a connection structure between a first semiconductor element and a second mounting layer by a first driving connection member in a semiconductor device according to a modified example. 13 is a cross-sectional view showing a connection structure between a first semiconductor element and a second mounting layer by a first driving connection member in a semiconductor device according to a modified example. FIG. 11 is a cross-sectional view of a first driving connection member in a semiconductor device according to a modified example. 13 is a cross-sectional view showing a connection structure between a first semiconductor element and a second mounting layer by a first driving connection member in a semiconductor device according to a modified example. 13 is a cross-sectional view showing a connection structure between a first semiconductor element and a second mounting layer by a first driving connection member in a semiconductor device according to a modified example. 13 is a plan view showing a connection structure between a first driving connection member and a first semiconductor element in a semiconductor device according to a modified example. FIG.

The semiconductor device and the method for manufacturing the semiconductor device will be described below with reference to the drawings. Each embodiment shown below is an example of a configuration and method for realizing a technical idea, and the material, shape, structure, arrangement, dimensions, etc. of each component are not limited to those described below. Each embodiment can be modified in various ways.

[First embodiment]
A semiconductor device 1A according to a first embodiment will be described with reference to FIGS.
Figures 1 to 6 show the external appearance of the semiconductor device 1A. Figure 7 shows the internal structure of the semiconductor device 1A. For convenience, the sealing resin 60 is omitted in Figures 7 and 13. Also, for convenience, the case 80 and the terminals 50 are omitted in Figure 13.

As shown in Figures 1 to 7, the semiconductor device 1A mainly includes a substrate 10, a semiconductor element 30, a terminal 50, a sealing resin 60 (see Figure 9), a heat sink 70, and a case 80 that houses them. The semiconductor device 1A is configured to be able to supply a current of, for example, 300 A or more and 1000 A or less. As shown in Figures 1 to 7 and 9, the substrate 10, the semiconductor element 30, and the sealing resin 60 are respectively housed by the heat sink 70 and the case 80, and are not exposed to the outside. On the other hand, the terminal 50 is housed in the case 80 with a part of it exposed or protruding outside the case 80. As shown in Figures 1, 2, and 7, the shape of the semiconductor device 1A is rectangular when viewed from the thickness direction of the substrate 10 (hereinafter referred to as "planar view"). Here, for convenience of explanation, the direction along the thickness direction of the substrate 10 is referred to as the "thickness direction z", and two mutually orthogonal directions among the directions perpendicular to the thickness direction z are referred to as the "first direction x" and the "second direction y", respectively. In this embodiment, the long side direction of the semiconductor device 1A in a plan view is the first direction x, and the short side direction is the second direction y.

Next, a schematic configuration of the semiconductor device 1A will be described.
As shown in Fig. 7, a plurality of semiconductor elements 30 are mounted on the substrate 10. The plurality of semiconductor elements 30 include a plurality of first semiconductor elements 30A and a plurality of second semiconductor elements 30B. In this embodiment, the semiconductor device 1A includes ten first semiconductor elements 30A and ten second semiconductor elements 30B. The plurality of first semiconductor elements 30A are arranged spaced apart in the first direction x while aligned in the second direction y. The plurality of second semiconductor elements 30B are arranged spaced apart in the first direction x while aligned in the second direction y. The first semiconductor elements 30A and the second semiconductor elements 30B are spaced apart in the second direction y.

In this embodiment, the first semiconductor element 30A and the second semiconductor element 30B are semiconductor elements having the same configuration. The first semiconductor element 30A and the second semiconductor element 30B are each used as a switching element. For each of the semiconductor elements 30A and 30B, a transistor made of, for example, Si (silicon), SiC (silicon carbide), GaN (gallium nitride), GaAs (gallium arsenide), or Ga ₂ O ₃ (gallium oxide) is used. When each of the semiconductor elements 30A and 30B is made of SiC, it is suitable for high-speed switching. In this embodiment, each of the semiconductor elements 30A and 30B is an N-channel MOSFET made of SiC. Note that each of the semiconductor elements 30A and 30B is not limited to a MOSFET, and may be a transistor such as a field effect transistor including a MISFET (Metal-Insulator-Semiconductor FET) or a bipolar transistor including an IGBT. Each of the semiconductor elements 30A and 30B may be a P-channel MOSFET instead of an N-channel MOSFET.

The terminal 50 has a first input terminal 51A, a second input terminal 51B, a first output terminal 52A, a second output terminal 52B, a first control terminal 53, a first detection terminal 54, a second control terminal 55, a second detection terminal 56, a power supply current terminal 57, and a temperature detection terminal 58. Each of the input terminals 51A, 51B, each of the output terminals 52A, 52B, each of the control terminals 53, 55, each of the detection terminals 54, 56, the power supply current terminal 57, and the temperature detection terminal 58 is made of a metal rod made of, for example, Cu (copper). The surface of this metal rod is plated with Sn (tin). The input terminals 51A, 51B, the output terminals 52A, 52B, the control terminals 53, 55, the detection terminals 54, 56, the power supply current terminal 57, and the temperature detection terminal 58 are, for example, of the same shape as one another, and in one example, are formed in an L-shape having a first portion extending in the second direction y and a second portion extending from the first portion in the thickness direction z.

The first input terminal 51A, the second input terminal 51B, the first output terminal 52A, the second output terminal 52B, the first control terminal 53, the first detection terminal 54, the second control terminal 55, the second detection terminal 56, and the power supply current terminal 57 are electrically connected to each of the semiconductor elements 30A and 30B.

The circuit configuration of such a semiconductor device 1A is shown in FIG. 8. As shown in FIG. 8, the semiconductor element 30 includes a first semiconductor element group 30AT consisting of a plurality of first semiconductor elements 30A, and a second semiconductor element group 30BT consisting of a plurality of second semiconductor elements 30B. For convenience, FIG. 8 shows one first semiconductor element 30A as the first semiconductor element group 30AT, and one second semiconductor element 30B as the second semiconductor element group 30BT.

Each of the semiconductor elements 30A and 30B has a drain electrode 31, a source electrode 32, and a gate electrode 33, which is an example of a control electrode. The gate electrode 33 of the first semiconductor element 30A controls the voltage supplied to the first semiconductor element 30A. The gate electrode 33 of the second semiconductor element 30B controls the voltage supplied to the second semiconductor element 30B. Each of the semiconductor elements 30A and 30B also has a body diode 34. Although not shown in FIG. 8, the first semiconductor elements 30A of the first semiconductor element group 30AT are connected in parallel to each other. That is, the drain electrodes 31 of the first semiconductor elements 30A are connected to each other, and the source electrodes 32 of the first semiconductor elements 30A are connected to each other. Also, the second semiconductor elements 30B of the second semiconductor element group 30BT are connected in parallel to each other. That is, the drain electrodes 31 of the second semiconductor elements 30B are connected to each other, and the source electrodes 32 of the second semiconductor elements 30B are connected to each other.

The first semiconductor element group 30AT and the second semiconductor element group 30BT are connected in series with each other. More specifically, the source electrodes 32 of the first semiconductor elements 30A in the first semiconductor element group 30AT are electrically connected to the drain electrodes 31 of the second semiconductor elements 30B in the second semiconductor element group 30BT. In this manner, in this embodiment, the semiconductor device 1A forms a half-bridge switching circuit. The first semiconductor element group 30AT forms the upper arm of the switching circuit, and the second semiconductor element group 30BT forms the lower arm of the switching circuit.

The first input terminal 51A is electrically connected to the drain electrode 31 of the first semiconductor element group 30AT. That is, the first input terminal 51A is electrically connected to each of the drain electrodes 31 of the multiple first semiconductor elements 30A. The second input terminal 51B is electrically connected to the source electrode 32 of the second semiconductor element group 30BT. That is, the second input terminal 51B is electrically connected to each of the source electrodes 32 of the multiple second semiconductor elements 30B. The first output terminal 52A and the second output terminal 52B are electrically connected to a node N1 between the source electrode 32 of the first semiconductor element group 30AT and the drain electrode 31 of the second semiconductor element group 30BT. That is, each output terminal 52A, 52B is electrically connected to a node N1 between the source electrode 32 of the multiple first semiconductor elements 30A and the drain electrode 31 of the multiple second semiconductor elements 30B.

The first control terminal 53 is electrically connected to the gate electrode 33 of the first semiconductor element group 30AT. That is, the first control terminal 53 is electrically connected to each of the gate electrodes 33 of the multiple semiconductor elements 30A. The second control terminal 55 is electrically connected to the gate electrode 33 of the second semiconductor element group 30BT. That is, the second control terminal 55 is electrically connected to each of the gate electrodes 33 of the multiple semiconductor elements 30B.

The first detection terminal 54 is electrically connected to the source electrode 32 of the first semiconductor element group 30AT. That is, the first detection terminal 54 is electrically connected to each of the source electrodes 32 of the multiple first semiconductor elements 30A. In this way, the first detection terminal 54 is a terminal that draws out the source electrodes 32 of the multiple first semiconductor elements 30A to the outside of the semiconductor device 1A. The second detection terminal 56 is electrically connected to the source electrode 32 of the second semiconductor element group 30BT. That is, the second detection terminal 56 is electrically connected to each of the source electrodes 32 of the multiple semiconductor elements 30B. In this way, the second detection terminal 56 is a terminal that draws out the source electrodes 32 of the multiple second semiconductor elements 30B to the outside of the semiconductor device 1A.

The power supply current terminal 57 is electrically connected to a node N2 between the drain electrode 31 of the first semiconductor element group 30AT and the first input terminal 51A. That is, the power supply current terminal 57 is electrically connected to a node N2 between each of the drain electrodes 31 of the first semiconductor elements 30A and the first input terminal 51A. In this way, the power supply current terminal 57 pulls out the drain electrodes 31 of the first semiconductor elements 30A to the outside of the semiconductor device 1A, and is a terminal for detecting the current supplied to the first semiconductor element group 30AT.

Each of the control terminals 53, 55, each of the detection terminals 54, 56, and the power supply current terminal 57 are electrically connected to a control circuit (not shown) provided outside the semiconductor device 1A. The control circuit supplies a gate voltage between the gate electrode 33 and the source electrode 32 of each of the first semiconductor elements 30A via the first control terminal 53 and the first detection terminal 54. The control circuit also supplies a gate voltage between the gate electrode 33 and the source electrode 32 of each of the second semiconductor elements 30B via the second control terminal 55 and the second detection terminal 56.

As shown in Figures 1 and 2, the input terminals 51A and 51B, the output terminals 52A and 52B, the control terminals 53 and 55, the detection terminals 54 and 56, the power supply current terminal 57, and the temperature detection terminal 58 are each provided in the case 80.

As shown in Figures 1, 2, and 7, the case 80 is formed in a frame shape surrounding the substrate 10 and the semiconductor element 30 in a plan view. The case 80 is made of a synthetic resin having electrical insulation properties and excellent heat resistance, such as PPS (polyphenylene sulfide). The case 80 includes a pair of side walls 81A, 81B, a pair of terminal seats 82A, 82B, a plurality of mounting portions 83, a power terminal block 84, and an output terminal block 85. In this embodiment, the pair of side walls 81A, 81B, the pair of terminal seats 82A, 82B, the plurality of mounting portions 83, the power terminal block 84, and the output terminal block 85 are integrally formed.

2, 6, and 7, in a plan view, the pair of side walls 81A, 81B are spaced apart from each other in the second direction y and extend along the first direction x. As shown in FIGS. 3 and 5, in a side view from the second direction y, the pair of side walls 81A, 81B each extend in the thickness direction z.

2 and 7, the side wall 81A is provided with a first control terminal 53, a first detection terminal 54, a power supply current terminal 57, and a pair of temperature detection terminals 58 spaced apart from each other in the first direction x. A portion of each of the first control terminal 53, the first detection terminal 54, the power supply current terminal 57, and the pair of temperature detection terminals 58 is disposed inside the side wall 81A. The first control terminal 53, the first detection terminal 54, the power supply current terminal 57, and the pair of temperature detection terminals 58 are each supported by the side wall 81A. As shown in FIGS. 1 and 3, the first control terminal 53, the first detection terminal 54, the power supply current terminal 57, and the pair of temperature detection terminals 58 each protrude from the side wall 81A in the thickness direction z.

As shown in Figs. 2 and 7, the second control terminal 55 and the second detection terminal 56 are provided on the side wall 81B and are spaced apart from each other in the first direction x. A portion of each of the second control terminal 55 and the second detection terminal 56 is disposed inside the side wall 81B. The second control terminal 55 and the second detection terminal 56 are each supported by the side wall 81B. As shown in Figs. 1 and 3, the second control terminal 55 and the second detection terminal 56 each protrude from the side wall 81B in the thickness direction z.

As shown in FIG. 7, a pair of terminal seats 82A, 82B are connected to both ends of each of the pair of side walls 81A, 81B in the first direction x. The pair of side walls 81A, 81B and the pair of terminal seats 82A, 82B form a frame that surrounds the substrate 10 and the semiconductor element 30. The pair of terminal seats 82A, 82B are spaced apart from each other in the first direction x and extend in the second direction y. A power terminal block 84 that protrudes outward from the terminal seat 82A in the first direction x is connected to the terminal seat 82A. An output terminal block 85 that protrudes outward from the terminal seat 82B in the first direction x is connected to the terminal seat 82B.

2, 4, and 7, the power terminal block 84 has a first terminal block 84A and a second terminal block 84B. The first terminal block 84A and the second terminal block 84B are aligned in the first direction x and arranged in the second direction y. The first terminal block 84A is provided with a part of the first input terminal 51A. The first terminal block 84A supports a part of the first input terminal 51A. The second terminal block 84B is provided with a part of the second input terminal 51B. The second terminal block 84B supports a part of the second input terminal 51B. As shown in FIGS. 7 and 9, a nut 84N is provided on a part of the first terminal block 84A. As shown in FIG. 7, a nut 84N is also provided inside the second terminal block 84B, similar to the first terminal block 84A.

7, the first input terminal 51A and the second input terminal 51B are symmetrical in plan view. In a side view of the first input terminal 51A seen from the second direction y, the first input terminal 51A is formed in a generally stepped shape. In a side view of the second input terminal 51B seen from the second direction y, the second input terminal 51B is formed in a stepped shape similar to the first input terminal 51A. Each input terminal 51A, 51B has an exposed portion 51a exposed to the outside of the semiconductor device 1A, a connecting portion 51b for electrically connecting to each semiconductor element 30A, 30B, and a connecting portion 51c connecting the exposed portion 51a and the connecting portion 51b. In this embodiment, each input terminal 51A, 51B is configured as a single component in which the exposed portion 51a, the connecting portion 51b, and the connecting portion 51c are integrally formed. The exposed portion 51a is provided with a through hole 51d penetrating the exposed portion 51a in the thickness direction z. The exposed portion 51a of the first input terminal 51A is supported by the first terminal block 84A. The exposed portion 51a of the second input terminal 51B is supported by the second terminal block 84B. As shown in FIG. 7, the through hole 51d of the exposed portion 51a of the first input terminal 51A is provided to correspond to the nut 84N of the first terminal block 84A. The through hole 51d of the exposed portion 51a of the second input terminal 51B is provided to correspond to the nut 84N of the second terminal block 84B. A plurality of connection portions 51b are provided and are arranged at a distance in the second direction y. The first input terminal 51A and the second input terminal 51B are not limited to the shapes shown in FIG. 7 and FIG. 9. For example, the first input terminal 51A may be formed so that the connecting portion 51c is adjacent to the second input terminal 51B in the second direction y. The second input terminal 51B may be formed so that the connecting portion 51c is adjacent to the first input terminal 51A in the second direction y.

2, 5, and 7, the output terminal block 85 has a first terminal block 85A and a second terminal block 85B. The first terminal block 85A and the second terminal block 85B are aligned in the first direction x and arranged in the second direction y. The first terminal block 85A is provided with a part of the first output terminal 52A. The first terminal block 85A supports a part of the first output terminal 52A. The second terminal block 85B is provided with a part of the second output terminal 52B. The second terminal block 85B supports a part of the second output terminal 52B. As shown in FIGS. 7 and 9, a nut 85N is provided inside the first terminal block 85A. As shown in FIG. 7, a nut 85N is also provided inside the second terminal block 85B, similar to the first terminal block 85A.

7, in a plan view, the first output terminal 52A and the second output terminal 52B have a symmetrical shape. In this embodiment, the first output terminal 52A has the same shape as the first input terminal 51A, and the second output terminal 52B has the same shape as the second input terminal 51B. In a side view of the first output terminal 52A seen from the second direction y, the first output terminal 52A is formed in a stepped shape. In a side view of the second output terminal 52B seen from the second direction y, the second output terminal 52B is formed in a stepped shape similar to the first output terminal 52A. Each output terminal 52A, 52B has an exposed portion 52a exposed to the outside of the semiconductor device 1A, a connecting portion 52b for electrically connecting to each semiconductor element 30A, 30B, and a connecting portion 52c connecting the exposed portion 52a and the connecting portion 52b. In this embodiment, each output terminal 52A, 52B is configured as a single component in which the exposed portion 52a, the connecting portion 52b, and the linking portion 52c are integrally formed. The exposed portion 52a is provided with a through hole 52d penetrating the exposed portion 52a in the thickness direction z. The exposed portion 52a of the first output terminal 52A is supported by the first terminal block 85A. The exposed portion 52a of the second output terminal 52B is supported by the second terminal block 85B. As shown in FIG. 7, the through hole 52d of the exposed portion 52a of the first output terminal 52A is provided corresponding to the nut 85N of the first terminal block 85A. The through hole 52d of the exposed portion 52a of the second output terminal 52B is provided corresponding to the nut 85N of the second terminal block 85B. A plurality of connecting portions 52b are provided and arranged at a distance from each other in the second direction y. The first output terminal 52A and the second output terminal 52B are not limited to the shapes shown in Figures 7 and 9. For example, the first output terminal 52A may be formed so that the connecting portion 52c is adjacent to the second output terminal 52B in the second direction y. The second output terminal 52B may be formed so that the connecting portion 52c is adjacent to the first output terminal 52A in the second direction y.

As shown in Figs. 2 and 7, the multiple mounting portions 83 are provided at the four corners of the case 80 in a plan view. Each mounting portion 83 has a mounting hole 83a that penetrates the mounting portion 83 in the thickness direction z.

3 and 6, the case 80 is attached with a heat sink 70 so as to close one end of the opening that opens in the thickness direction z of the case 80. In this embodiment, the heat sink 70 is attached to a pair of side walls 81A, 81B and a pair of terminal seats 82A, 82B of the case 80. The heat sink 70 is attached to a pair of side walls 81A, 81B and a pair of terminal seats 82A, 82B on the side where the multiple mounting parts 83 are provided in the thickness direction z. The heat sink 70 is made of, for example, Cu or a Cu alloy. In this case, nickel plating may be applied to the surface of the metal plate. As shown in FIG. 9, the heat sink 70 has a heat sink main surface 70s and a heat sink back surface 70r that face opposite sides in the thickness direction z. The heat sink back surface 70r is exposed to the outside of the semiconductor device 1A. As shown in FIG. 6, in a plan view, support holes 71 that penetrate the heat sink 70 in the thickness direction z are provided at the four corners of the heat sink 70. The support holes 71 correspond to multiple mounting holes 83a (see FIG. 2) in the case 80. The heat sink 70 is supported by the case 80 by fitting fastening members such as pins into the multiple mounting holes 83a and the support holes 71.

As shown in Figures 1 and 2, the case 80 has a top plate 86. The top plate 86 covers the opening of the case 80 on the opposite side to the heat sink 70 in the thickness direction z. The top plate 86 covers the internal area of the semiconductor device 1A formed by the heat sink 70, the pair of side walls 81A, 81B, and the pair of terminal seats 82A, 82B. The top plate 86 is supported by the pair of side walls 81A, 81B in a state spaced apart from the heat sink 70 and the substrate 10 in the thickness direction z.

Next, a detailed configuration of the internal region of the semiconductor device 1A will be described with reference to FIG. 7 and FIGS.
7 and 9, the internal region of the semiconductor device 1A is an opening region surrounded by a pair of side walls 81A, 81B and a pair of terminal seats 82A, 82B of the case 80, and one end of the opening region in the thickness direction z is closed by the heat sink 70. The substrate 10, the semiconductor element 30, and the sealing resin 60 (see FIG. 9) are accommodated in this internal region.

As shown in FIG. 9, the sealing resin 60 is made of an electrically insulating resin material and fills the internal area enclosed by the heat sink 70 and the top plate 86. The sealing resin 60 seals the substrate 10 and the semiconductor element 30.

The substrate 10 is bonded to the heat dissipation main surface 70s of the heat sink 70 by a bonding material such as Ag (silver) paste or solder. The bonding material is not limited to conductive bonding materials such as Ag paste or solder, and an electrically insulating bonding material may be used. As shown in FIG. 7, the substrate 10 has a first substrate 11 and a second substrate 12. The first substrate 11 and the second substrate 12 are arranged in a state aligned in the second direction y and spaced apart in the first direction x. The first substrate 11 is disposed on the side of the input terminals 51A and 51B in the internal region in the first direction x, and the second substrate 12 is disposed on the side of the output terminals 52A and 52B in the internal region in the first direction x. As shown in FIG. 9, the first substrate 11 has a substrate main surface 11s and a substrate back surface 11r that face opposite each other in the thickness direction z. The second substrate 12 has a substrate main surface 12s and a substrate back surface 12r that face opposite each other in the thickness direction z.

Each of the substrates 11 and 12 is an electrically insulating member in which a conductive mounting layer for mounting the semiconductor element 30 and a conductive conductive layer for electrically connecting to the semiconductor element 30 are arranged on the substrate main surfaces 11s and 12s of the substrates 11 and 12. In this embodiment, the constituent material of each of the substrates 11 and 12 is ceramics with excellent thermal conductivity. An example of such ceramics is AlN (aluminum nitride). Each of the substrates 11 and 12 can be a DBC (Direct Bonding Copper) substrate in which Cu foil is bonded to the substrate main surfaces 11s and 12s and the substrate back surfaces 11r and 12r. If a DBC substrate is used, the mounting layer and conductive layer can be easily formed by patterning the Cu foil bonded to the substrate main surfaces 11s and 12s. In addition, the Cu foil bonded to the substrate back surfaces 11r and 12r can be used as a heat transfer layer.

As shown in FIG. 7 and FIG. 10, the shape of the first substrate 11 in plan view is a substantially rectangular shape with the long side direction being the first direction x and the short side direction being the second direction y. As shown in FIG. 10, the first substrate 11 mainly has four substrate side surfaces 11a to 11d. The substrate side surfaces 11a to 11d are provided between the substrate main surface 11s and the substrate back surface 11r in the thickness direction z, and extend in a direction intersecting the substrate main surface 11s and the substrate back surface 11r ( extending in a direction perpendicular to the substrate main surface 11s and the substrate back surface 11r in this embodiment). The substrate side surface 11a is a side surface of the first substrate 11 on the side wall 81A side, and the substrate side surface 11b is a side surface of the first substrate 11 on the side wall 81B side. The substrate side surface 11a and the substrate side surface 11b are surfaces facing opposite each other in the second direction y, and extend along the first direction x in plan view. The board side surface 11c is a side surface of the first board 11 facing the terminal seat 82A, and the board side surface 11d is a side surface of the first board 11 facing the terminal seat 82B (see FIG. 7 ). The board side surface 11c and the board side surface 11d are surfaces facing opposite each other in the first direction x, and extend along the first direction x in a plan view.

As shown in FIG. 10, the first mounting layer 13A, the second mounting layer 14A, the conductive layer 15A, the first control layer 16A, the first detection layer 17A, the second control layer 18A, the second detection layer 19A, and the thermistor mounting layer 20 are arranged on the substrate main surface 11s of the first substrate 11. In this embodiment, the second mounting layer 14A and the conductive layer 15A are each an example of a driving conductor.

The first mounting layer 13A, the second mounting layer 14A, and the conductive layer 15A are arranged spaced apart from each other in the second direction y. The first mounting layer 13A is arranged closer to the substrate side surface 11a than the second mounting layer 14A and the conductive layer 15A in the second direction y. The conductive layer 15A is arranged closer to the substrate side surface 11b than the first mounting layer 13A and the second mounting layer 14A in the second direction y. The second mounting layer 14A is arranged between the first mounting layer 13A and the conductive layer 15A in the second direction y.

The first mounting layer 13A has a strip-shaped main mounting portion 13a extending in the first direction x, and a terminal side connection portion 13b formed at the end of the main mounting portion 13a on the substrate side surface 11c side in the first direction x. In this embodiment, the first mounting layer 13A is configured as a single member in which the main mounting portion 13a and the terminal side connection portion 13b are integrally formed. The terminal side connection portion 13b extends toward the second direction y and protrudes from both sides of the main mounting portion 13a in the second direction y. The terminal side connection portion 13b is arranged so as to be adjacent to the terminal base 82A (see FIG. 7) in the first direction x, that is, so as to be adjacent to the first input terminal 51A in the first direction x. The terminal side connection portion 13b is connected to a plurality of connection portions 51b of the first input terminal 51A.

The conductive layer 15A has a strip-shaped main conductive portion 15a extending in the first direction x, and a terminal side connection portion 15b formed at the end of the main conductive portion 15a on the substrate side surface 11c side in the first direction x. In this embodiment, the conductive layer 15A is configured as a single component in which the main conductive portion 15a and the terminal side connection portion 15b are integrally formed. The terminal side connection portion 15b extends toward the second direction y and protrudes from both sides of the main conductive portion 15a in the second direction y. The terminal side connection portion 15b is arranged so as to be adjacent to the terminal base 82B (see FIG. 7) in the first direction x, that is, so as to be adjacent to the second input terminal 51B in the first direction x. The terminal side connection portion 15b is connected to a plurality of connection portions 51b of the second input terminal 51B. The terminal side connection portion 15b is arranged so as to be adjacent to the terminal side connection portion 13b of the first mounting layer 13A in the second direction y. 10, the conductive layer 15A is symmetrical to the first mounting layer 13A in a plan view. Therefore, the width dimension of the main conductive portion 15a (the dimension of the main conductive portion 15a in the second direction y) is equal to the width dimension of the main mounting portion 13a (the dimension of the main mounting portion 13a in the second direction y).

The conductive layer 15A also has a conductive main surface 15s and a conductive back surface 15r (see FIG. 13) that face opposite sides in the thickness direction z. The conductive main surface 15s is an example of a drive connection surface. The conductive main surface 15s faces the same side as the substrate main surface 11s of the first substrate 11, and the conductive back surface 15r faces the same side as the substrate back surface 11r of the first substrate 11.

The second mounting layer 14A is a strip-shaped metal layer extending in the first direction x. The second mounting layer 14A is disposed closer to the substrate side surface 11d than the terminal side connection portion 13b of the first mounting layer 13A and the terminal side connection portion 15b of the conductive layer 15A in the first direction x. The second mounting layer 14A is disposed between the main mounting portion 13a of the first mounting layer 13A and the main conductive portion 15a of the conductive layer 15A in the second direction y. In this embodiment, the second mounting layer 14A is disposed in the center of the first substrate 11 in the second direction y. In this embodiment, the edge of the second mounting layer 14A on the substrate side surface 11d side in the first direction x, the edge of the main mounting portion 13a of the first mounting layer 13A on the substrate side surface 11d side in the first direction x, and the edge of the main conductive portion 15a of the conductive layer 15A on the substrate side surface 11d side in the first direction x are aligned in the first direction x. The width dimension of the second mounting layer 14A (the dimension of the second mounting layer 14A in the second direction y) is larger than the width dimension of the main mounting portion 13a of the first mounting layer 13A (the dimension of the main mounting portion 13a in the second direction y) and the width dimension of the main conductive portion 15a of the conductive layer 15A (the dimension of the main conductive portion 15a in the second direction y).

The second mounting layer 14A also has a main mounting surface 14s and a back mounting surface 14r (see FIG. 13) that face opposite sides in the thickness direction z. The main mounting surface 14s is an example of a drive connection surface. The main mounting surface 14s faces the same side as the main substrate surface 11s of the first substrate 11, and the back mounting surface 14r faces the same side as the back substrate surface 11r of the first substrate 11.

The first control layer 16A and the first detection layer 17A are each arranged closer to the substrate side surface 11a than the main mounting portion 13a of the first mounting layer 13A in the second direction y. In other words, the first control layer 16A and the first detection layer 17A are each arranged between the main mounting portion 13a of the first mounting layer 13A and the substrate side surface 11a in the second direction y. Also, the first control layer 16A and the first detection layer 17A are each arranged closer to the substrate side surface 11d than the terminal side connection portion 13b of the first mounting layer 13A in the first direction x. The first control layer 16A and the first detection layer 17A are arranged apart in the second direction y. The first detection layer 17A is arranged closer to the main mounting portion 13a of the first mounting layer 13A than the first control layer 16A. In other words, the first control layer 16A is arranged closer to the substrate side surface 11a than the first detection layer 17A. The first control layer 16A and the first detection layer 17A are arranged apart in the second direction y with the edge of the first control layer 16A on the substrate side surface 11d side in the first direction x and the edge of the first detection layer 17A on the substrate side surface 11d side in the first direction x aligned in the first direction x. The arrangement of the first control layer 16A and the first detection layer 17A in the second direction y can be changed as desired, and for example, the first detection layer 17A may be arranged closer to the substrate side surface 11a than the first control layer 16A.

The first control layer 16A and the first detection layer 17A are each a strip-shaped metal layer extending in the first direction x. The length of the first control layer 16A in the first direction x is shorter than the length of the first detection layer 17A in the first direction x. The width dimension of the first control layer 16A (the dimension of the first control layer 16A in the second direction y) is equal to the width dimension of the first detection layer 17A (the dimension of the first detection layer 17A in the second direction y). The width dimension of the first control layer 16A and the width dimension of the first detection layer 17A are each smaller than the width dimension of the main mounting portion 13a of the first mounting layer 13A (the dimension of the main mounting portion 13a in the second direction y).

The second control layer 18A and the second detection layer 19A are each disposed closer to the substrate side surface 11b than the main conductive portion 15a of the conductive layer 15A in the second direction y. In other words, the second control layer 18A and the second detection layer 19A are each disposed between the main conductive portion 15a of the conductive layer 15A and the substrate side surface 11b in the second direction y. Also, the second control layer 18A and the second detection layer 19A are each disposed closer to the substrate side surface 11d than the terminal side connection portion 15b of the conductive layer 15A in the first direction x. The second control layer 18A and the second detection layer 19A are disposed apart in the second direction y. The second detection layer 19A is disposed closer to the main conductive portion 15a of the conductive layer 15A than the second control layer 18A. In other words, the second control layer 18A is disposed closer to the substrate side surface 11b than the second detection layer 19A. The second control layer 18A and the second detection layer 19A are aligned in the first direction x and spaced apart in the second direction y. The arrangement of the second control layer 18A and the second detection layer 19A in the second direction y can be changed as desired. For example, the second detection layer 19A may be disposed closer to the substrate side surface 11b than the second control layer 18A.

The second control layer 18A and the second detection layer 19A are each a strip-shaped metal layer extending in the first direction x. The length of the second control layer 18A in the first direction x is equal to the length of the second detection layer 19A in the first direction x. The lengths of the second control layer 18A and the second detection layer 19A in the first direction x are each longer than the length of the first detection layer 17A in the first direction x. The width dimension of the second control layer 18A (the dimension of the second control layer 18A in the second direction y) is equal to the width dimension of the second detection layer 19A (the dimension of the second detection layer 19A in the second direction y) and is equal to the width dimension of the first control layer 16A (the dimension of the first control layer 16A in the second direction y). In this way, the first mounting layer 13A, the second mounting layer 14A, and the conductive layer 15A are sandwiched in the second direction y by the first control layer 16A and the first detection layer 17A, and the second control layer 18A and the second detection layer 19A.

The thermistor mounting layer 20 is disposed closer to the substrate side surface 11a than the main mounting portion 13a of the first mounting layer 13A in the second direction y. The thermistor mounting layer 20 is also disposed so as to overlap the terminal side connection portion 13b, the first control layer 16A, and the first detection layer 17A of the first mounting layer 13A when viewed from the first direction x. In the first direction x, the thermistor mounting layer 20 is disposed between the first control layer 16A and the first detection layer 17A and the terminal side connection portion 13b of the first mounting layer 13A.

A temperature detection element can be mounted on the thermistor mounting layer 20. In this embodiment, a thermistor 21, which is an example of a temperature detection element, is mounted on the thermistor mounting layer 20. The thermistor mounting layer 20 has a pair of regions spaced apart from each other in the first direction x. The positive electrode of the thermistor 21 can be electrically connected to one region, and the negative electrode of the thermistor 21 can be electrically connected to the other region.

7 and 11, the shape of the second substrate 12 in plan view is a substantially rectangular shape with the long side direction being the first direction x and the short side direction being the second direction y. In this embodiment, the shape of the second substrate 12 is symmetrical with respect to the first substrate 11 about a center line along the second direction y, and the size of the second substrate 12 in the first direction x, the second direction y, and the thickness direction z is equal to the size of the first substrate 11 in the first direction x, the second direction y, and the thickness direction z. As shown in FIG. 11, the second substrate 12 mainly has four substrate side surfaces 12a to 12d. The substrate side surface 12a and the substrate side surface 12b are surfaces facing opposite each other in the second direction y, and extend along the first direction x in plan view. The substrate side surface 12a is the side surface of the second substrate 12 on the side wall 81A side, and the substrate side surface 12b is the side surface of the second substrate 12 on the side wall 81B side. Board side surface 12c and board side surface 12d are surfaces facing opposite each other in first direction x and extend along second direction y in plan view. Board side surface 12c is the side surface of second board 12 facing terminal seat 82A (see FIG. 7), and board side surface 12d is the side surface of second board 12 facing terminal seat 82B (see FIG. 7). Note that the shape of second board 12 does not have to be symmetrical to the shape of first board 11, and the size of second board 12 may be different from the size of first board 11.

As shown in FIG. 11, a first mounting layer 13B, a second mounting layer 14B, a conductive layer 15B, a first control layer 16B, a first detection layer 17B, a second control layer 18B, and a second detection layer 19B are arranged on the substrate main surface 12s of the second substrate 12. In this embodiment, the second mounting layer 14B and the conductive layer 15B are each an example of a driving conductor.

The first mounting layer 13B, the second mounting layer 14B, and the conductive layer 15B are arranged at a distance from each other in the second direction y. The first mounting layer 13B is arranged closer to the substrate side surface 12a than the second mounting layer 14B and the conductive layer 15B in the second direction y. The conductive layer 15B is arranged closer to the substrate side surface 12b than the first mounting layer 13B and the second mounting layer 14B in the second direction y. The second mounting layer 14B is arranged between the first mounting layer 13B and the conductive layer 15B in the second direction y.

The first mounting layer 13B has a strip-shaped main mounting portion 13c extending in the first direction x, and a terminal side connection portion 13d formed at the end of the main mounting portion 13c on the substrate side surface 12d side in the first direction x. In this embodiment, the first mounting layer 13B is configured as a single component in which the main mounting portion 13c and the terminal side connection portion 13d are integrally formed. The main mounting portion 13c is arranged apart from the main mounting portion 13a in the first direction x while being aligned with the main mounting portion 13a of the first mounting layer 13A in the second direction y (see FIG. 10 for both). The width dimension of the main mounting portion 13c (the dimension of the main mounting portion 13c in the second direction y) is equal to the width dimension of the main mounting portion 13a of the first mounting layer 13A (the dimension of the main mounting portion 13a in the second direction y). The terminal side connection portion 13d extends from the main mounting portion 13c toward the substrate side surface 12a in the second direction y. The width dimension of the terminal side connection part 13d (the dimension of the terminal side connection part 13d in the first direction x) is smaller than the width dimension of the main mounting part 13c (the dimension of the main mounting part 13c in the second direction y) and is larger than the width dimension of the first control layer 16B (the dimension of the first control layer 16B in the second direction y). The width dimension of the terminal side connection part 13d is also larger than the width dimension of the first detection layer 17B (the dimension of the first detection layer 17B in the second direction y).

The conductive layer 15B is a strip-shaped metal layer extending in the first direction x. The conductive layer 15B is aligned with the main conductive portion 15a of the conductive layer 15A in the second direction y (see FIG. 10 for both), and is spaced apart from the main conductive portion 15a in the first direction x. The width dimension of the conductive layer 15B (the dimension of the conductive layer 15B in the second direction y) is equal to the width dimension of the main conductive portion 15a of the conductive layer 15A (the dimension of the main conductive portion 15a in the second direction y).

Similarly to conductive layer 15A, conductive layer 15B has a conductive main surface 15s and a conductive back surface 15r (see FIG. 13) that face opposite sides in the thickness direction z. Conductive main surface 15s is an example of a drive connection surface. Conductive main surface 15s faces the same side as substrate main surface 12s of second substrate 12, and conductive back surface 15r faces the same side as substrate back surface 12r of second substrate 12.

The second mounting layer 14B has a strip-shaped main mounting portion 14a extending in the first direction x, and a terminal side connection portion 14b formed at the end of the main mounting portion 14a on the substrate side surface 12d side in the first direction x. In this embodiment, the second mounting layer 14B is configured as a single component in which the main mounting portion 14a and the terminal side connection portion 14b are integrally formed.

Similarly to the second mounting layer 14A, the second mounting layer 14B has a main mounting surface 14s and a back mounting surface 14r (see FIG. 13) that face opposite sides in the thickness direction z. The main mounting surface 14s is an example of a drive connection surface. The main mounting surface 14s faces the same side as the main substrate surface 12s of the second substrate 12, and the back mounting surface 14r faces the same side as the back substrate surface 12r of the second substrate 12.

The main mounting portion 14a is disposed between the main mounting portion 13c of the first mounting layer 13B and the conductive layer 15B in the second direction y. In this embodiment, the main mounting portion 14a is disposed in the center of the second substrate 12 in the second direction y. The main mounting portion 14a is disposed apart from the second mounting layer 14A in the first direction x while being aligned with the second mounting layer 14A (see FIG. 10) in the second direction y. The width dimension of the main mounting portion 14a (the dimension of the main mounting portion 14a in the second direction y) is larger than the width dimension of the main mounting portion 13c of the first mounting layer 13B (the dimension of the main mounting portion 13c in the second direction y) and the width dimension of the conductive layer 15B (the dimension of the conductive layer 15B in the second direction y), and is equal to the width dimension of the second mounting layer 14A (the dimension of the second mounting layer 14A in the second direction y). The edge of the main mounting portion 13c of the first mounting layer 13B on the substrate side surface 12c side in the first direction x, the edge of the main mounting portion 14a of the second mounting layer 14B on the substrate side surface 12c side in the first direction x, and the edge of the conductive layer 15B on the substrate side surface 12c side in the first direction x are aligned with each other in the first direction x. The terminal side connection portion 14b extends in the second direction y and protrudes from both sides of the main mounting portion 14a in the second direction y. Thus, the shape of the second mounting layer 14B in a plan view is T-shaped. In addition, the terminal side connection portion 14b is disposed closer to the substrate side surface 12d than the first mounting layer 13B and the second mounting layer 14B. The terminal side connection portion 14b is disposed so as to be adjacent to the terminal seat 82B in the first direction x, that is, so as to be adjacent to the first output terminal 52A and the second output terminal 52B. Multiple connection parts 52b of each output terminal 52A, 52B are connected to the terminal side connection part 14b.

The first control layer 16B and the first detection layer 17B are each arranged closer to the substrate side surface 12a than the main mounting portion 13c of the first mounting layer 13B in the second direction y. In other words, the first control layer 16B and the first detection layer 17B are each arranged between the main mounting portion 13c and the substrate side surface 12a in the second direction y. Also, the first control layer 16B and the first detection layer 17B are each arranged closer to the substrate side surface 12c than the terminal side connection portion 14b of the second mounting layer 14B in the first direction x. The first control layer 16B and the first detection layer 17B are arranged in a state where they are aligned in the first direction x and spaced apart from each other in the second direction y. The first detection layer 17B is arranged closer to the main mounting portion 13c of the first mounting layer 13B than the first control layer 16B in the second direction y. In other words, the first control layer 16B is disposed closer to the substrate side surface 12a than the first detection layer 17B in the second direction y. The first control layer 16B is disposed apart from the first control layer 16A in the first direction x while being aligned with the first control layer 16A (see FIG. 10) in the second direction y. The first detection layer 17B is disposed apart from the first detection layer 17A in the first direction x while being aligned with the first detection layer 17A (see FIG. 10) in the second direction y. The arrangement of the first control layer 16B and the first detection layer 17B in the second direction y can be changed arbitrarily, and for example, the first detection layer 17B may be disposed closer to the substrate side surface 12a than the first control layer 16B.

The first control layer 16B and the first detection layer 17B are each a strip-shaped metal layer extending in the first direction x. The length of the first control layer 16B in the first direction x is equal to the length of the first detection layer 17B in the first direction x. The lengths of the first control layer 16B and the first detection layer 17B in the first direction x are longer than the length of the first detection layer 17A in the first direction x. The width dimension of the first control layer 16B (the dimension of the first control layer 16B in the second direction y) is equal to the width dimension of the first detection layer 17B (the dimension of the first detection layer 17B in the second direction y). The width dimension of the first control layer 16B and the width dimension of the first detection layer 17B are each smaller than the width dimension of the main mounting portion 13c of the first mounting layer 13B (the dimension of the main mounting portion 13c in the second direction y).

The second control layer 18B and the second detection layer 19B are each arranged closer to the substrate side surface 12b than the conductive layer 15B in the second direction y. In other words, the second control layer 18B and the second detection layer 19B are each arranged between the conductive layer 15B and the substrate side surface 12b in the second direction y. Also, the second control layer 18B and the second detection layer 19B are each arranged closer to the substrate side surface 12c than the terminal side connection portion 14b of the second mounting layer 14B in the first direction x. The second control layer 18B and the second detection layer 19B are arranged in a spaced apart state in the second direction y while being aligned in the first direction x. The second detection layer 19B is arranged closer to the conductive layer 15B than the second control layer 18B in the second direction y. In other words, the second control layer 18B is arranged closer to the substrate side surface 12b than the second detection layer 19B in the second direction y. The second control layer 18B is aligned with the second control layer 18A (see FIG. 10) in the second direction y and spaced apart from the second control layer 18A in the first direction x. The second detection layer 19B is aligned with the second detection layer 19A (see FIG. 10) in the second direction y and spaced apart from the second detection layer 19A in the first direction x. The arrangement of the second control layer 18B and the second detection layer 19B in the second direction y can be changed as desired. For example, the second detection layer 19B may be arranged closer to the substrate side surface 12b than the second control layer 18B.

The second control layer 18B and the second detection layer 19B are each a strip-shaped metal layer extending in the first direction x. The length of the second control layer 18B in the first direction x is equal to the length of the second detection layer 19B in the first direction x. The length of the second control layer 18B and the second detection layer 19B in the first direction x is longer than the length of the first control layer 16B and the first detection layer 17B in the first direction x, and is equal to the length of the second control layer 18A and the second detection layer 19A in the first direction x. The width dimension of the second control layer 18B (the dimension of the second control layer 18B in the second direction y) is equal to the width dimension of the second detection layer 19B (the dimension of the second detection layer 19A in the second direction y). The width dimension of the second control layer 18B and the width dimension of the second detection layer 19B are each smaller than the width dimension of the conductive layer 15B (the dimension of the conductive layer 15B in the second direction y). In this way, the first mounting layer 13B, the second mounting layer 14B, and the conductive layer 15B are sandwiched in the second direction y by the first control layer 16B and the first detection layer 17B, and the second control layer 18B and the second detection layer 19B.

As shown in FIG. 12, the end of the main mounting portion 13a of the first mounting layer 13A on the side of the substrate side 11d in the first direction x and the end of the main mounting portion 13c of the first mounting layer 13B on the side of the substrate side 12c in the first direction x are connected by a substrate connection member 90A. The end of the second mounting layer 14A on the side of the substrate side 11d in the first direction x and the end of the main mounting portion 14a of the second mounting layer 14B on the side of the substrate side 12c in the first direction x are connected by a substrate connection member 90B. The end of the main conductive portion 15a of the conductive layer 15A on the side of the substrate side 11d in the first direction x and the end of the conductive layer 15B on the side of the substrate side 12c in the first direction x are connected by a substrate connection member 90C. Each of the substrate connection members 90A to 90C is formed in a plate shape and is made of, for example, Cu or a Cu alloy. The shapes and sizes of the substrate connection members 90A to 90C in a plan view are equal to each other. Each of the board connection members 90A to 90C has a pair of connecting portions 91 extending in the first direction x and a linking portion 92 linking the pair of connecting portions 91 in the second direction y. In this embodiment, each of the board connection members 90A to 90C is configured as a single part in which the pair of connecting portions 91 and the linking portion 92 are integrally formed. The pair of connecting portions 91 are arranged spaced apart from each other in the second direction y while being aligned in the first direction x, and each extends in the first direction x. The linking portion 92 is provided so as to link the central portions of the pair of connecting portions 91 in the first direction x. Therefore, each of the board connection members 90A to 90C has an H-shape in plan view. The shape of the board connection members 90A to 90C in plan view can be changed arbitrarily. In one example, the shape of the board connection members 90A to 90C in plan view may be an I-shape in which the linking portion 92 is omitted.

A pair of connection parts 91 of the substrate connection member 90A are connected to the end of the main mounting part 13a of the first mounting layer 13A facing the substrate side surface 11d in the first direction x, and the end of the main mounting part 13c of the first mounting layer 13B facing the substrate side surface 12c in the first direction x. The connecting part 92 of the substrate connection member 90A is located between the main mounting part 13a of the first mounting layer 13A and the main mounting part 13c of the first mounting layer 13B in the first direction x. In this way, the substrate connection member 90A electrically connects the first mounting layer 13A and the first mounting layer 13B.

A pair of connection parts 91 of the substrate connection member 90B are connected to an end part of the second mounting layer 14A on the substrate side surface 11d side in the first direction x and an end part of the main mounting part 14a of the second mounting layer 14B on the substrate side surface 12c side in the first direction x. The connecting part 92 of the substrate connection member 90B is located between the end part of the second mounting layer 14A on the substrate side surface 11d side in the first direction x and the end part of the main mounting part 14a of the second mounting layer 14B on the substrate side surface 12c side in the first direction x. In this way, the second mounting layer 14A and the second mounting layer 14B are electrically connected by the substrate connection member 90B.

The pair of connection parts 91 of the board connection member 90C are connected to the end of the main conductive part 15a of the conductive layer 15A facing the board side surface 12d in the first direction x and the end of the conductive layer 15B facing the board side surface 11d in the first direction x. The joint part 92 of the board connection member 90C is located between the end of the main conductive part 15a of the conductive layer 15A facing the board side surface 11d in the first direction x and the end of the conductive layer 15B facing the board side surface 12c in the first direction x. In this way, the conductive layer 15A and the conductive layer 15B are electrically connected by the board connection member 90C.

The first control layer 16A and the first control layer 16B are connected by a first control layer connecting member 93. The first detection layer 17A and the first detection layer 17B are connected by a first detection layer connecting member 94. Here, it is preferable that the arrangement of the first control layer 16A and the first detection layer 17A in the second direction y is the same as the arrangement of the first control layer 16B and the first detection layer 17B in the second direction y. This prevents the first control layer connecting member 93 and the first detection layer connecting member 94 from crossing.

The second control layer 18A and the second control layer 18B are connected by a second control layer connecting member 95. The second detection layer 19A and the second detection layer 19B are connected by a second detection layer connecting member 96. Here, it is preferable that the arrangement of the second control layer 18A and the second detection layer 19A in the second direction y is the same as the arrangement of the second control layer 18B and the second detection layer 19B in the second direction y. This prevents the second control layer connecting member 95 and the second detection layer connecting member 96 from crossing.

Each of the control layer connection members 93, 95 and each of the detection layer connection members 94, 96 is made of Cu, Au (gold), Al, or an alloy containing any of these, and is a wire formed by, for example, wire bonding.

The first control layer connection member 93 is composed of multiple wires, and connects the end of the first control layer 16A on the side of the substrate side 11d (the side of the first control layer 16B) in the first direction x to the end of the first control layer 16B on the side of the substrate side 12c (the side of the first control layer 16A) in the first direction x. In this way, the first control layer connection member 93 electrically connects the first control layer 16A and the first control layer 16B.

The first detection layer connection member 94 is composed of multiple wires. It connects the end of the first detection layer 17A on the substrate side surface 11d side (first detection layer 17B side) in the first direction x with the end of the first detection layer 17B on the substrate side surface 12c side (first detection layer 17A side) in the first direction x. In this way, the first detection layer connection member 94 electrically connects the first detection layer 17A and the first detection layer 17B.

The second control layer connection member 95 is composed of multiple wires, and connects the end of the second control layer 18A on the side of the substrate side 11d (the side of the second control layer 18B) in the first direction x to the end of the second control layer 18B on the side of the substrate side 12c (the side of the second control layer 18A) in the first direction x. In this way, the second control layer connection member 95 electrically connects the second control layer 18A and the second control layer 18B.

The second detection layer connection member 96 is composed of multiple wires. It connects the end of the second detection layer 19A on the side of the substrate side 11d (the side of the second detection layer 19B) in the first direction x to the end of the second detection layer 19B on the side of the substrate side 12c (the side of the second detection layer 19A) in the first direction x. In this way, the second detection layer 19A and the second detection layer 19B are electrically connected by the second detection layer connection member 96.

As shown in FIG. 7, the side wall 81A of the case 80 is arranged so as to be adjacent to the first control layers 16A, 16B and thermistor mounting layer 20 in the second direction y. Therefore, the first control terminal 53, the first detection terminal 54, the power supply current terminal 57, and the pair of temperature detection terminals 58 provided on the side wall 81A are each arranged so as to be adjacent to the first control layers 16A, 16B and thermistor mounting layer 20 in the second direction y.

More specifically, as shown in FIG. 12, the first control terminal 53 and the first detection terminal 54 are arranged closer to the second substrate 12 than the first control layer 16A, and are arranged adjacent to the first control layer 16B in the second direction y. The first control terminal 53 and the first detection terminal 54 are arranged adjacent to each other in the first direction x. The first control terminal 53 and the first detection terminal 54 are arranged closer to the substrate side surface 12c of the second substrate 12 in the first direction x. In the first direction x, the first detection terminal 54 is arranged closer to the terminal base 82B (see FIG. 7) than the first control terminal 53.

The first control terminal 53 and the first control layer 16A are connected by a first control terminal connection member 26A. The first control terminal connection member 26A is connected to a portion of the first control layer 16A on the side of the substrate side 11d in the first direction x. In this way, the first control layers 16A, 16B and the first control terminal 53 are electrically connected by the first control terminal connection member 26A and the first control layer connection member 93. The first detection terminal 54 and the first detection layer 17B are connected by a first detection terminal connection member 27A. The first detection terminal connection member 27A is connected to a portion of the first detection layer 17B on the side of the substrate side 12c in the first direction x. In this way, the first detection layers 17A, 17B and the first detection terminal 54 are electrically connected by the first detection terminal connection member 27A and the first detection layer connection member 94.

As shown in FIG. 7, the power supply current terminal 57 is disposed closer to the terminal base 82B than the first control terminal 53 and the first detection terminal 54 in the first direction x. As shown in FIG. 11, the power supply current terminal 57 is disposed adjacent to the terminal side connection portion 13d of the first mounting layer 13B in the second direction y.

The power supply current terminal 57 and the first mounting layer 13B are connected by a power supply current terminal connection member 28. The power supply current terminal connection member 28 is connected to the end of the terminal side connection portion 13d of the first mounting layer 13B on the substrate side surface 12a side in the second direction y. In this manner, the power supply current terminal connection member 28 electrically connects the first mounting layers 13A, 13B and the first input terminal 51A (see FIG. 7) to the power supply current terminal 57. Note that in this embodiment, there is one power supply current terminal connection member 28, but this is not limited to this and there may be multiple, and the number can be changed as desired.

As shown in FIG. 10, the pair of temperature detection terminals 58 are disposed closer to the substrate side surface 11c than the first control layer 16A. The pair of temperature detection terminals 58 are disposed adjacent to the thermistor mounting layer 20 in the second direction y.

The pair of temperature detection terminals 58 and the thermistor mounting layer 20 are connected by a thermistor connection member 29. The thermistor connection member 29 is composed of two wires, one of which connects one of the pair of regions of the thermistor mounting layer 20 to one terminal of the pair of temperature detection terminals 58, and the remaining wire connects the other of the pair of regions of the thermistor mounting layer 20 to the other terminal of the pair of temperature detection terminals 58. In this way, the thermistor 21 and the temperature detection terminal 58 are electrically connected by the thermistor connection member 29.

As shown in FIG. 7, the side wall 81B of the case 80 is arranged so as to be adjacent to the second control layers 18A and 18B in the second direction y. Therefore, the second control terminal 55 and the second detection terminal 56 provided on the side wall 81B are each arranged so as to be adjacent to the second control layers 18A and 18B in the second direction y.

More specifically, as shown in FIG. 12, the second control terminal 55 and the second detection terminal 56 are arranged closer to the first substrate 11 than the second control layer 18B, and are arranged adjacent to the second control layer 18A in the second direction y. The second control terminal 55 and the second detection terminal 56 are arranged adjacent to each other in the first direction x. The second control terminal 55 and the second detection terminal 56 are arranged closer to the substrate side surface 11c of the first substrate 11 in the first direction x. In the first direction x, the second detection terminal 56 is arranged closer to the terminal base 82A (see FIG. 7) than the second control terminal 55.

The second control terminal 55 and the second control layer 18B are connected by a second control terminal connection member 26B. The second control terminal connection member 26B is connected to a portion of the second control layer 18B on the side of the substrate side 12c in the first direction x. In this way, the second control layers 18A, 18B and the second control terminal 55 are electrically connected by the second control terminal connection member 26B and the second control layer connection member 95. The second detection terminal 56 and the second detection layer 19A are connected by a second detection terminal connection member 27B. The second detection terminal connection member 27B is connected to a portion of the second detection layer 19A on the side of the substrate side 11d in the first direction x. In this way, the second detection layers 19A, 19B and the second detection terminal 56 are electrically connected by the second detection terminal connection member 27B and the second detection layer connection member 96.

Each of the control terminal connection members 26A, 26B, each of the detection terminal connection members 27A, 27B, the power supply current terminal connection member 28, and the thermistor connection member 29 are made of, for example, Cu, Al, Au, or an alloy containing any of these, and are wires formed by wire bonding.

As shown in FIG. 10, a plurality of first semiconductor elements 30A (five in this embodiment) are arranged as semiconductor elements 30 on the main mounting portion 13a of the first mounting layer 13A. The first semiconductor elements 30A are aligned in the second direction y and spaced apart from each other in the first direction x. Each of the first semiconductor elements 30A is arranged at the end of the main mounting portion 13a on the second mounting layer 14A side (substrate side surface 11b side) in the second direction y.

9, the first semiconductor element 30A has an element main surface 30s and an element back surface 30r that face opposite each other in the thickness direction z. The element main surface 30s of the first semiconductor element 30A faces the same side as the substrate main surface 11s of the first substrate 11 and the substrate main surface 12s of the second substrate 12. Therefore, the element main surface 30s faces the same side as the mounting main surface 14s of the second mounting layer 14A, 14B and the conductive main surface 15s of the conductive layers 15A, 15B (both see FIG. 10). In other words, the mounting main surfaces 14s of the second mounting layers 14A, 14B and the conductive main surfaces 15s of the conductive layers 15A, 15B each face the same direction as the element main surface 30s. The first semiconductor element 30A is disposed on the first mounting layer 13A so that the element back surface 30r faces the main mounting portion 13a. The element back surface 30r is joined to the main mounting portion 13a by a conductive bonding material. Examples of conductive bonding materials are Ag paste and solder. A drain electrode 31 (see FIG. 8) is formed on the element back surface 30r. Therefore, the drain electrode 31 is electrically connected to the first mounting layer 13A. Since the first mounting layer 13A is electrically connected to the first input terminal 51A, the drain electrode 31 is electrically connected to the first input terminal 51A via the first mounting layer 13A.

As shown in Figures 10 and 18, a source electrode 32 and a gate electrode 33 are formed on the element main surface 30s. The source electrode 32 includes a main source electrode 32A, a first source electrode 32B, and a second source electrode 32C.

The main source electrode 32A is formed on the portion of the element principal surface 30s on the second mounting layer 14A side (substrate side surface 11b side) in the second direction y, and occupies more than half of the area of the element principal surface 30s. The shape of the main source electrode 32A in a plan view is rectangular with its long side extending in the first direction x and its short side extending in the second direction y.

The first source electrode 32B, the second source electrode 32C, and the gate electrode 33 are each arranged on the first detection layer 17A side (substrate side 11a side) in the second direction y of the element main surface 30s. The first source electrode 32B, the second source electrode 32C, and the gate electrode 33 are aligned in the second direction y and arranged at a distance in the first direction x. The gate electrode 33 is arranged between the first source electrode 32B and the second source electrode 32C in the first direction x. The first source electrode 32B is arranged on the substrate side 11d side with respect to the gate electrode 33, and the second source electrode 32C is arranged on the substrate side 11c side with respect to the gate electrode 33. The shape of the gate electrode 33 in a plan view is rectangular. The shapes of the first source electrode 32B and the second source electrode 32C in a plan view are the same as each other, and are rectangular with the long side direction being the first direction x and the short side direction being the second direction y.

A first driving connection member 40A is connected to the main source electrode 32A of each first semiconductor element 30A mounted on the first mounting layer 13A. In a plan view, the first driving connection member 40A extends in the second direction y. Therefore, in a plan view, the multiple first driving connection members 40A are arranged at a distance from each other in the first direction x, which is the same direction as the arrangement direction of the multiple first semiconductor elements 30A. The first driving connection member 40A is made of a metal sheet whose plan view shape is a belt extending toward the second direction y. In addition, the first driving connection member 40A is connected to the second mounting layer 14A. More specifically, the first driving connection member 40A is connected to the end of the second mounting layer 14A on the first mounting layer 13A side (substrate side surface 11a side) in the second direction y. In this way, the first drive connection member 40A electrically connects the source electrode 32 of the first semiconductor element 30A to the second mounting layer 14A.

The first detection connection member 23A is connected to the first source electrode 32B of the first semiconductor element 30A. The first detection connection member 23A is connected to the first detection layer 17A. In this way, the first detection connection member 23A electrically connects the source electrode 32 of the first semiconductor element 30A and the first detection layer 17A.

The first control connection member 22A is connected to the gate electrode 33 of the first semiconductor element 30A. The first control connection member 22A is connected to the first control layer 16A. In this manner, the gate electrode 33 of the first semiconductor element 30A and the first control layer 16A are electrically connected by the first control connection member 22A. In one example, the first detection connection member 23A and the first control connection member 22A are each made of, for example, Cu, Au, Al, or an alloy containing any of these, and are wires formed by wire bonding.

A plurality of second semiconductor elements 30B (five in this embodiment) are arranged as the semiconductor elements 30 on the main mounting portion 14a of the second mounting layer 14A. The second semiconductor elements 30B are aligned in the second direction y and spaced apart from each other in the first direction x. Each of the second semiconductor elements 30B is arranged on the conductive layer 15A side (substrate side surface 11b side) of the main mounting portion 14a in the second direction y. In this embodiment, as shown in FIG. 10, the second semiconductor elements 30B are aligned with the first semiconductor elements 30A in the first direction x and spaced apart from the first semiconductor elements 30A in the second direction y.

Since the configuration of the second semiconductor element 30B is the same as that of the first semiconductor element 30A, the same reference numerals are used for the common components, and the description thereof is omitted. The arrangement direction of the second semiconductor element 30B is the same as that of the first semiconductor element 30A. Specifically, the second semiconductor element 30B is arranged so that its first source electrode 32B, second source electrode 32C, and gate electrode 33 are on the first mounting layer 13A side (substrate side 11a side) with respect to the main source electrode 32A. The joint structure between the second semiconductor element 30B and the main mounting portion 14a of the second mounting layer 14A is the same as the joint structure between the first semiconductor element 30A and the main mounting portion 13a of the first mounting layer 13A. Therefore, the drain electrode 31 (see FIG. 8) of the second semiconductor element 30B is electrically connected to the second mounting layer 14A. Since the second mounting layer 14A is connected to each output terminal 52A, 52B via the substrate connection member 90B and the second mounting layer 14B, the drain electrode 31 of the second semiconductor element 30B mounted on the second mounting layer 14A is electrically connected to each output terminal 52A, 52B via the second mounting layer 14A, 14B and the substrate connection member 90B. Also, since the drain electrode 31 of the second semiconductor element 30B is electrically connected to the second mounting layer 14A, the drain electrode 31 of the second semiconductor element 30B mounted on the second mounting layer 14A is electrically connected to the source electrode 32 of the first semiconductor element 30A.

A second driving connection member 40B is connected to the main source electrode 32A of each second semiconductor element 30B mounted on the second mounting layer 14A. In a plan view, the second driving connection member 40B extends in the second direction y. Therefore, in a plan view, the multiple second driving connection members 40B are arranged at a distance from each other in the first direction x, which is the same direction as the arrangement direction of the multiple second semiconductor elements 30B. The second driving connection member 40B is made of a metal sheet whose shape in a plan view is a belt extending toward the second direction y. In addition, the second driving connection member 40B is connected to the conductive layer 15A. More specifically, the second driving connection member 40B is connected to the end of the main conductive portion 15a of the conductive layer 15A on the second mounting layer 14A side (substrate side surface 11a side) in the second direction y. In this way, the source electrode 32 of the second semiconductor element 30B is electrically connected to the conductive layer 15A. Because the conductive layer 15A is electrically connected to the second input terminal 51B, the source electrode 32 of the second semiconductor element 30B is electrically connected to the second input terminal 51B.

As shown in FIG. 10, the second drive connection member 40B is aligned with the first drive connection member 40A in the first direction x, and is spaced apart from each other in the second direction y. In this embodiment, the length of the second drive connection member 40B is equal to the length of the first drive connection member 40A in a planar view. Here, if the difference between the length of the second drive connection member 40B and the length of the first drive connection member 40A in a planar view is, for example, within 5% of the length of the first drive connection member 40A in a planar view, it can be said that the length of the second drive connection member 40B is equal to the length of the first drive connection member 40A in a planar view.

The second detection connection member 25A is connected to the first source electrode 32B of the second semiconductor element 30B. The second detection connection member 25A is also connected to the second detection layer 19A. In this way, the second detection connection member 25A electrically connects the source electrode 32 of the second semiconductor element 30B and the second detection layer 19A.

The second control connection member 24A is connected to the gate electrode 33 of the second semiconductor element 30B. The second control connection member 24A is connected to the second control layer 18A. In this manner, the gate electrode 33 of the second semiconductor element 30B and the second control layer 18A are electrically connected by the second control connection member 24A. In one example, the second detection connection member 25A and the second control connection member 24A are each made of, for example, Cu, Au, Al, or an alloy containing any of these, and are wires formed by wire bonding.

As shown in FIG. 11, a plurality of first semiconductor elements 30A (five in this embodiment) are arranged as semiconductor elements 30 on the main mounting portion 13c of the first mounting layer 13B. The plurality of first semiconductor elements 30A are arranged spaced apart from each other in the first direction x while being aligned with each other in the second direction y. Each of the plurality of first semiconductor elements 30A is arranged at the end of the main mounting portion 13c on the second mounting layer 14B side (substrate side surface 12b side) in the second direction y. As shown in FIG. 7, the plurality of first semiconductor elements 30A mounted on the first mounting layer 13B are arranged spaced apart from the plurality of first semiconductor elements 30A in the first direction x while being aligned with the plurality of first semiconductor elements 30A mounted on the first mounting layer 13A in the second direction y. In addition, the arrangement direction of the plurality of first semiconductor elements 30A mounted on the first mounting layer 13B is the same as the arrangement direction of the plurality of first semiconductor elements 30A mounted on the first mounting layer 13A.

The drain electrode 31 of the first semiconductor element 30A mounted on the first mounting layer 13B is electrically connected to the first mounting layer 13B. Since the first mounting layer 13B is electrically connected to the first input terminal 51A via the substrate connection member 90A and the first mounting layer 13A, the drain electrode 31 of the first semiconductor element 30A mounted on the first mounting layer 13B is electrically connected to the first input terminal 51A via the first mounting layer 13B, the substrate connection member 90A, and the first mounting layer 13A.

A first driving connection member 40A is connected to the main source electrode 32A of each first semiconductor element 30A mounted on the first mounting layer 13B. In a plan view, the first driving connection member 40A extends in the second direction y. Therefore, in a plan view, the multiple first driving connection members 40A are arranged at a distance from each other in the first direction x, which is the same direction as the arrangement direction of the multiple first semiconductor elements 30A. In addition, the first driving connection member 40A is connected to the second mounting layer 14B. More specifically, the first driving connection member 40A is connected to the end of the main mounting portion 14a of the second mounting layer 14B on the first mounting layer 13B side (substrate side surface 12a side) in the second direction y. In this way, the first driving connection member 40A electrically connects the source electrode 32 of the first semiconductor element 30A to the second mounting layer 14B.

The first detection connection member 23B is connected to the second source electrode 32C of the first semiconductor element 30A mounted on the first mounting layer 13B. The first detection connection member 23B is connected to the first detection layer 17B. In this way, the first detection connection member 23B electrically connects the source electrode 32 of the first semiconductor element 30A and the first detection layer 17B.

The first control connection member 22B is connected to the gate electrode 33 of the first semiconductor element 30A mounted on the first mounting layer 13B. The first control connection member 22B is connected to the first control layer 16B. In this manner, the first control connection member 22B electrically connects the gate electrode 33 of the first semiconductor element 30A to the first control layer 16B. In one example, the first detection connection member 23B and the first control connection member 22B are each made of Cu, Au, Al, or an alloy containing any of these, and are wires formed by wire bonding.

As shown in Figures 10 and 11, the arrangement of the first detection connection member 23A and the first control connection member 22A in the first direction x is different from the arrangement of the first detection connection member 23B and the first control connection member 22B in the first direction x.

A plurality of second semiconductor elements 30B (five in this embodiment) are arranged as semiconductor elements 30 on the main mounting portion 14a of the second mounting layer 14B. The second semiconductor elements 30B are aligned with each other in the second direction y and spaced apart from each other in the first direction x. Each of the second semiconductor elements 30B is arranged at the end of the main mounting portion 13a on the conductive layer 15B side (substrate side surface 12b side) in the second direction y. In this embodiment, as shown in FIG. 11, the second semiconductor element 30B is aligned with the first semiconductor element 30A in the first direction x and spaced apart from the first semiconductor element 30A in the second direction y.

As shown in FIG. 7, the multiple second semiconductor elements 30B mounted on the second mounting layer 14B are aligned in the second direction y with the multiple second semiconductor elements 30B mounted on the second mounting layer 14A, and are spaced apart from the multiple second semiconductor elements 30B in the first direction x. Also, as shown in FIG. 11, the orientation of the multiple second semiconductor elements 30B mounted on the second mounting layer 14B is the same as the orientation of the multiple second semiconductor elements 30B mounted on the second mounting layer 14A.

The drain electrode 31 of the second semiconductor element 30B mounted on the second mounting layer 14B is electrically connected to the second mounting layer 14B. Since the second mounting layer 14B is electrically connected to each output terminal 52A, 52B, the drain electrode 31 of the second semiconductor element 30B mounted on the second mounting layer 14B is electrically connected to each output terminal 52A, 52B via the second mounting layer 14B.

A second driving connection member 40B is connected to the main source electrode 32A of each second semiconductor element 30B mounted on the second mounting layer 14B. In a plan view, the second driving connection member 40B extends in the second direction y. Therefore, in a plan view, the multiple second driving connection members 40B are arranged at a distance from each other in the first direction x, which is the same direction as the arrangement direction of the multiple second semiconductor elements 30B. In addition, the second driving connection member 40B is connected to the conductive layer 15B. More specifically, the second driving connection member 40B is connected to the end of the conductive layer 15B on the second mounting layer 14B side (substrate side surface 12a side) in the second direction y. In this way, the source electrode 32 of the second semiconductor element 30B and the conductive layer 15B are electrically connected by the second driving connection member 40B. Since the conductive layer 15B is electrically connected to the second input terminal 51B via the substrate connection member 90C and the conductive layer 15A, the source electrode 32 of each second semiconductor element 30B mounted on the second mounting layer 14B is electrically connected to the second input terminal 51B via the second drive connection member 40B, the conductive layer 15B, the substrate connection member 90C, and the conductive layer 15A.

As shown in FIG. 11, the second drive connection member 40B is aligned with the first drive connection member 40A in the first direction x, and is spaced apart from each other in the second direction y. In this embodiment, the length of the second drive connection member 40B is equal to the length of the first drive connection member 40A in a planar view. Here, if the difference between the length of the second drive connection member 40B and the length of the first drive connection member 40A in a planar view is, for example, within 5% of the length of the first drive connection member 40A in a planar view, it can be said that the length of the second drive connection member 40B is equal to the length of the first drive connection member 40A in a planar view.

A second detection connection member 25B is connected to the second source electrode 32C of the second semiconductor element 30B mounted on the second mounting layer 14B. The second detection connection member 25B is connected to the second detection layer 19B. The second detection connection member 25B is formed so as to straddle the second drive connection member 40B. In this way, the second detection connection member 25B electrically connects the source electrode 32 of the second semiconductor element 30B and the second detection layer 19B.

The second control connection member 24B is connected to the gate electrode 33 of the second semiconductor element 30B mounted on the second mounting layer 14B. The second control connection member 24B is connected to the second control layer 18B. As shown in FIG. 13, the second control connection member 24B is formed so as to straddle the second drive connection member 40B. In this way, the second control connection member 24B electrically connects the gate electrode 33 of the second semiconductor element 30B to the second control layer 18B. In one example, the second detection connection member 25B and the second control connection member 24B are each made of Cu, Au, Al, or an alloy containing any of these, and are wires formed by wire bonding.

As shown in Figures 10 and 11, the arrangement of the second detection connection member 25A and the second control connection member 24A in the first direction x is different from the arrangement of the second detection connection member 25B and the second control connection member 24B in the first direction x.

(Structure of driving connection member)
13 to 19, a detailed configuration of each of the drive connecting members 40A, 40B and a connection structure between each of the semiconductor elements 30A, 30B and each of the drive connecting members 40A, 40B will be described. Note that since the configuration of the first drive connecting member 40A and the configuration of the second drive connecting member 40B are common to each other, the same reference numerals are used for the common components, and descriptions thereof may be omitted.

As shown in Figures 13 and 14, the first drive connection member 40A has a first connection portion 41 connected to the main source electrode 32A of the first semiconductor element 30A, a second connection portion 42 connected to the second mounting layer 14A, and a linking portion 43 that links the first connection portion 41 and the second connection portion 42. In this embodiment, the first drive connection member 40A is configured as a single component in which the first connection portion 41, the second connection portion 42, and the linking portion 43 are integrally formed.

The first connection portion 41 has a connection surface 41a that contacts the main source electrode 32A. The connection surface 41a is formed as a plane perpendicular to the thickness direction z. The connection surface 41a is a portion of the surface of the first connection portion 41 that faces the main source electrode 32A in the thickness direction z and that contacts the main source electrode 32A. In this embodiment, the entire surface of the surface of the first connection portion 41 that faces the main source electrode 32A in the thickness direction z contacts the main source electrode 32A. Therefore, the surface of the first connection portion 41 that faces the main source electrode 32A constitutes the connection surface 41a.

The second connection portion 42 has a connection surface 42a that contacts the second mounting layer 14A. The connection surface 42a has a plane perpendicular to the thickness direction z. The connection surface 42a is the portion of the surface of the second connection portion 42 that faces the second mounting layer 14A in the thickness direction z and that contacts the main mounting surface 14s of the second mounting layer 14A.

As shown in FIG. 14 and FIG. 15, the first drive connection member 40A is composed of a sheet-shaped conductor portion 44 and a solder layer 45 covering the surface of the conductor portion 44. The conductor portion 44 is composed of, for example, Cu or a Cu alloy. As shown in FIG. 15, the conductor portion 44 has a conductor main surface 44s and a conductor back surface 44r facing opposite sides in the thickness direction z, and a conductor side surface 44a provided between the conductor main surface 44s and the conductor back surface 44r in the thickness direction z and extending in a direction intersecting the conductor main surface 44s and the conductor back surface 44r. In this embodiment, the conductor side surface 44a is a surface extending in a direction perpendicular to the conductor main surface 44s and the conductor back surface 44r. The conductor main surface 44s faces the same direction as the element main surface 30s of the first semiconductor element 30A (second semiconductor element 30B). The conductor back surface 44r faces the same direction as the element back surface 30r of the first semiconductor element 30A (second semiconductor element 30B). In other words, the conductor principal surface 44s can be said to be the principal surface of the conductor portion 44 facing the same direction as the element principal surface 30s. The conductor back surface 44r can be said to be the back surface of the conductor portion 44 facing the same direction as the element back surface 30r. The solder layer 45 has a principal surface side solder layer 45s covering the conductor principal surface 44s, a back surface side solder layer 45r covering the conductor back surface 44r, and a side surface side solder layer 45a covering the conductor side surface 44a. The principal surface side solder layer 45s and the back surface side solder layer 45r are connected to each other by the side surface side solder layer 45a. In this embodiment, the solder layer 45 contacts the surface (front surface) of the conductor portion 44. That is, the principal surface side solder layer 45s contacts the conductor principal surface 44s, the back surface side solder layer 45r contacts the conductor back surface 44r, and the side surface side solder layer 45a contacts the conductor side surface 44a.

As shown in FIG. 14, in a cross-sectional view of the first drive connection member 40A cut in a plane along the thickness direction z and the second direction y, the first drive connection member 40A has a three-layer structure in which the conductor portion 44 is sandwiched between the main surface side solder layer 45s and the back surface side solder layer 45r in the thickness direction z. The portion of the back surface side solder layer 45r that corresponds to the first connection portion 41 constitutes the connection surface 41a. In other words, the connection surface 41a is constituted by the back surface side solder layer 45r. Also, the portion of the back surface side solder layer 45r that corresponds to the second connection portion 42 constitutes the connection surface 42a. In other words, the connection surface 42a is constituted by the back surface side solder layer 45r.

In addition, the surfaces of the conductor parts 44 constituting the first connection part 41, the second connection part 42, and the coupling part 43 are covered with a solder layer. That is, the conductor main surface 44s of the conductor part 44 constituting the first connection part 41 is covered with the main surface side solder layer 45s, the conductor back surface 44r of the conductor part 44 constituting the first connection part 41 is covered with the back surface side solder layer 45r, and the conductor side surface 44a of the conductor part 44 constituting the first connection part 41 is covered with the side surface side solder layer 45a. In this embodiment, in a cross-sectional view of the first connection part 41, the main surface side solder layer 45s is in contact with the conductor main surface 44s, and the back surface side solder layer 45r is in contact with the conductor back surface 44r. In addition, the side surface side solder layer 45a is in contact with the conductor side surface 44a. The conductor principal surface 44s of the conductor portion 44 constituting the second connection portion 42 is covered by the principal surface side solder layer 45s, the conductor rear surface 44r of the conductor portion 44 constituting the second connection portion 42 is covered by the rear surface side solder layer 45r, and the conductor side surface 44a of the conductor portion 44 constituting the second connection portion 42 is covered by the side surface side solder layer 45a. In this embodiment, in a cross-sectional view of the second connection portion 42, the principal surface side solder layer 45s is in contact with the conductor principal surface 44s, and the rear surface side solder layer 45r is in contact with the conductor rear surface 44r. Also, the side surface side solder layer 45a is in contact with the conductor side surface 44a. The conductor principal surface 44s of the conductor portion 44 constituting the connecting portion 43 is covered by the principal surface side solder layer 45s, the conductor rear surface 44r of the conductor portion 44 constituting the connecting portion 43 is covered by the rear surface side solder layer 45r, and the conductor side surface 44a of the conductor portion 44 constituting the connecting portion 43 is covered by the side surface side solder layer 45a. In this embodiment, in a cross-sectional view of the connecting portion 43, the principal surface side solder layer 45s is in contact with the conductor principal surface 44s, and the rear surface side solder layer 45r is in contact with the conductor rear surface 44r. Also, the side surface side solder layer 45a is in contact with the conductor side surface 44a.

As shown in FIG. 16, the first connection portion 41 of the first drive connection member 40A has a recess 46 in which a portion of the first connection portion 41 opposite the main source electrode 32A in the thickness direction z is recessed toward the main source electrode 32A. As shown in FIG. 18, the shape of the recess 46 in plan view is, for example, rectangular with the first direction x as the long side direction and the second direction y as the short side direction. Note that the shape of the recess 46 in plan view can be changed as desired. In one example, the shape of the recess 46 in plan view may be a square, a circle, or an ellipse.

As shown in FIG. 16, the first end surface 44b of the conductor portion 44 that corresponds to the first connection portion 41 is not covered with a solder layer. In other words, the first end surface 44b of the conductor portion 44 is exposed to the outside.

As shown in FIG. 17, the second connection portion 42 of the first drive connection member 40A has a recess 47 in which a portion of the second connection portion 42 opposite the second mounting layer 14A in the thickness direction z is recessed toward the second mounting layer 14A. As shown in FIG. 18, the shape of the recess 47 in plan view is the same as the shape of the recess 46 in plan view, and is, for example, a rectangular shape with the first direction x as the long side direction and the second direction y as the short side direction. Note that the shape of the recess 47 in plan view can be changed arbitrarily. For example, the shape of the recess 47 in plan view may be different from the shape of the recess 46 in plan view. The shape of the recess 47 in plan view may also be a square, a circle, or an ellipse.

In addition, in this embodiment, the size of recess 47 is smaller than the size of recess 46 in a plan view, but this is not limited to this and can be changed as desired. In one example, the size of recess 47 is equal to the size of recess 46 in a plan view.

As shown in FIG. 17, the tip of the second connection portion 42 is provided with an extension portion 48 that moves away from the second mounting layer 14A in the thickness direction z toward the tip. In this embodiment, the conductor main surface 44s of the conductor portion 44 constituting the extension portion 48 is covered with a main surface side solder layer 45s, the conductor back surface 44r of the conductor portion 44 constituting the extension portion 48 is covered with a back surface side solder layer 45r, and the conductor side surface 44a of the conductor portion 44 constituting the extension portion 48 is covered with a side surface side solder layer 45a. On the other hand, the second end surface 44c of the conductor portion 44 constituting the extension portion 48 is not covered with a solder layer. In other words, the second end surface 44c of the conductor portion 44 is exposed to the outside.

The connecting portion 43 is formed so as to have a convex curved shape that protrudes in a direction away from the first substrate 11 in the thickness direction z when viewed from the first direction x. In this embodiment, the connecting portion 43 has a first bent portion 43a, a second bent portion 43b, and a third bent portion 43c. The first bent portion 43a is provided at the end of the connecting portion 43 on the first connection portion 41 side, and is bent in a curved shape so as to move away from the element main surface 30s of the first semiconductor element 30A in the thickness direction z as it moves away from the first connection portion 41. The second bent portion 43b is a portion that extends from the first bent portion 43a in the thickness direction z so as to move away from the element main surface 30s, and then bends to extend toward the second mounting layer 14A, forming a convex curved shape. The third bent portion 43c is provided at the end of the coupling portion 43 on the second connection portion 42 side, and is bent in a curved shape so as to move away from the second mounting layer 14A in the thickness direction z as it moves away from the second connection portion 42.

As shown in FIG. 13 and FIG. 19, the second drive connection member 40B has a first connection portion 41, a second connection portion 42, and a coupling portion 43, similar to the first drive connection member 40A. The first connection portion 41 of the second drive connection member 40B is connected to the main source electrode 32A of the second semiconductor element 30B. The second connection portion 42 of the second drive connection member 40B is connected to the conductive layer 15A. The relationship between the conductor portion 44 of the second drive connection member 40B and the main surface side solder layer 45s, the back surface side solder layer 45r, and the side surface side solder layer 45a is the same as the relationship between the conductor portion 44 of the first drive connection member 40A and the main surface side solder layer 45s, the back surface side solder layer 45r, and the side surface side solder layer 45a.

The first connection portion 41 of the second drive connection member 40B is provided with a recess 46 similar to the recess 46 of the first connection portion 41 of the first drive connection member 40A. The second connection portion 42 of the second drive connection member 40B is provided with a recess 47 and an extension portion 48 similar to the recess 47 and extension portion 48 of the second connection portion 42 of the first drive connection member 40A.

(Production method)
20 to 22, a method for manufacturing the semiconductor device 1A of this embodiment, in particular a method for connecting the first driving connection member 40A to the first semiconductor element 30A and the second mounting layer 14A, will be described. Note that in the following description of the manufacturing method, the reference numerals given to the components of the semiconductor device 1A refer to the components of the semiconductor device 1A shown in FIGS. 1 to 19.

The manufacturing method of semiconductor device 1A mainly includes a heat sink attachment process, a substrate attachment process, an element mounting process, a first connection process, a second connection process, a third connection process, a fourth connection process, a sealing process, and a top plate attachment process. In this embodiment, semiconductor device 1A is manufactured in the order of a heat sink attachment process, a substrate attachment process, an element mounting process, a first connection process, a second connection process, a third connection process, a fourth connection process, a sealing process, and a top plate attachment process. Note that the order of the first connection process, the second connection process, and the third connection process can be changed as desired.

In the heat sink mounting step, the heat sink 70 is mounted to the case 80 with which the terminals 50 are integrally formed by, for example, insert molding.
In the substrate attachment process, first, the first substrate 11 and the second substrate 12 on which the mounting layers 13A, 13B, 14A, and 14B, the conductive layers 15A and 15B, the control layers 16A, 16B, 18A, and 18B, and the detection layers 17A, 17B, 19A, and 19B are formed are prepared. Then, the first substrate 11 and the second substrate 12 are joined to the main heat dissipation surface 70s of the heat sink 70.

In the element mounting process, multiple first semiconductor elements 30A are mounted on the first mounting layer 13A of the first substrate 11 and the first mounting layer 13B of the second substrate 12, and multiple second semiconductor elements 30B are mounted on the second mounting layer 14A of the first substrate 11 and the second mounting layer 14B of the second substrate 12. Note that FIG. 20 shows the state in which the first semiconductor elements 30A are mounted on the first mounting layer 13A.

In the first connection step, a wire bonding device equipped with wires made of, for example, Cu, Au, Al, or an alloy containing any of these, is used to form the first control terminal connection member 26A, the second control terminal connection member 26B, the first detection terminal connection member 27A, the second detection terminal connection member 27B, the first control layer connection member 93, the first detection layer connection member 94, the second control layer connection member 95, and the second detection layer connection member 96.

In the second connection step, the substrate connection member 90A is bonded to the first mounting layers 13A and 13B, the substrate connection member 90B is bonded to the second mounting layers 14A and 14B, and the substrate connection member 90C is bonded to the conductive layers 15A and 15B. The substrate connection members 90A to 90C are bonded, for example, by ultrasonic bonding.

In the third connection step, the first drive connection member 40A and the second drive connection member 40B are formed using a bonding device 800 (see FIG. 21) that is different from the wire bonding device used in the first connection step and the second connection step.

In the fourth connection step, a wire bonding device equipped with wires made of, for example, Cu, Au, Al, or an alloy containing any of these, is used to form the first control connection members 22A, 22B, the first detection connection members 23A, 23B, the second control connection members 24A, 24B, and the second detection connection members 25A, 25B.

Next, the third connecting step will be described in detail.
21, the bonding device 800 discharges a metallic and flexible sheet 840 constituting the first driving connection member 40A and the second driving connection member 40B from a sheet winding section 810 around which the sheet 840 is wound, via a nozzle 801. The sheet 840 is made of a conductor portion and a solder layer covering the surface of the conductor portion. The conductor portion is made of, for example, Cu or a Cu alloy. The sheet 840 is formed by immersing the conductor portion in a tank that stores solder.

The bonding device 800 places the sheet 840 on the main source electrode 32A of the first semiconductor element 30A. Then, with the sheet 840 placed on the main source electrode 32A, the sheet 840 is pressed against the main source electrode 32A using a heated joining jig 820 to join the sheet 840 to the main source electrode 32A. Specifically, the heated joining jig 820 presses the sheet 840 against the main source electrode 32A. This melts the solder layer 45 to join the main source electrode 32A and the back side solder layer 45r (or the conductor portion 44). As a result, the first connection portion 41 of the first drive connection member 40A is formed, and a recess 46 is formed in the first connection portion 41. The shape of the recess 46 in a plan view corresponds to the shape of the portion of the joining jig 820 that presses the sheet 840. In this way, the step shown in FIG. 21 of the third connection step is an example of an electrode joining step. The joining jig 820 is also an example of a tool.

22, the bonding device 800 moves the nozzle 801 in a mountain shape to form the sheet 840 into a mountain shape, thereby forming the connection portion 43, and then places the sheet 840 on the second mounting layer 14A. Then, with the sheet 840 placed on the second mounting layer 14A, the sheet 840 is pressed against the second mounting layer 14A using a heated joining tool 820 to join the sheet 840. This joining method is the same as the joining method between the sheet 840 and the main source electrode 32A. As a result, the second connection portion 42 of the first drive connection member 40A is formed, and a recess 47 is formed in the second connection portion 42. In this way, the step shown in FIG. 22 of the third connection step is an example of a conductor joining step.

Next, the bonding device 800 moves the nozzle 801 from the second connection portion 42 toward the conductive layer 15A while moving it away from the second mounting layer 14A, and then cuts the sheet 840 with the cutting tool 830. In this embodiment, the sheet 840 is cut by moving the cutting tool 830 along the thickness direction z. This forms an extension portion 48 in the second connection portion 42. In this way, the process of cutting the sheet 840 in the third connection process is an example of a cutting process.

The bonding device 800 forms the second driving connection member 40B in the same manner as the first driving connection member 40A. In this fourth bonding process, the first driving connection member 40A connects each first semiconductor element 30A mounted on the first mounting layer 13A to the second mounting layer 14A, and the first driving connection member 40A connects each first semiconductor element 30A mounted on the first mounting layer 13B to the second mounting layer 14B. The second driving connection member 40B connects each second semiconductor element 30B mounted on the second mounting layer 14A to the conductive layer 15A, and the second driving connection member 40B connects each second semiconductor element 30B mounted on the second mounting layer 14B to the conductive layer 15B.

In the sealing process, the internal region formed by the case 80 and the heat sink 70 is filled with sealing resin 60. For example, Si is used as a constituent material of the sealing resin 60. This seals the semiconductor elements 30A, 30B, the drive connection members 40A, 40B, the control connection members 22A, 22B, 24A, 24B, the detection connection members 23A, 23B, 25A, 25B, the control terminal connection members 26A, 26B, the detection terminal connection members 27A, 27B, the board connection members 90A to 90C, the control layer connection members 93, 95, and the detection layer connection members 94, 96.

In the top plate attachment process, the top plate 86 is attached to the pair of side walls 81A, 81B of the case 80. This seals the internal area formed by the case 80 and the heat sink 70. Through the above processes, the semiconductor device 1A is manufactured.

(Action)
Next, the operation of the semiconductor device 1A of this embodiment will be described.
In a semiconductor device capable of handling large currents, in a configuration in which a conductor portion for connecting a source electrode of a semiconductor element to an external terminal and the source electrode of the semiconductor element are connected by, for example, multiple wires, there is a risk that the wires will break due to repeated switching of the semiconductor element.

To solve these problems, a configuration has been proposed in which a strip-shaped metal clip is used to connect the source electrode of the semiconductor element to the conductor portion instead of multiple wires. This metal clip is expensive because it is formed, for example, by molding using a mold. In addition, the metal clip is joined to the semiconductor element by, for example, ultrasonic bonding, so there is a risk that the semiconductor element may be damaged when the metal clip is joined to the semiconductor element.

In view of this, in this embodiment, the source electrode 32 of the first semiconductor element 30A and the second mounting layers 14A and 14B are connected by a sheet-like first driving connection member 40A, and the source electrode 32 of the second semiconductor element 30B and the conductive layers 15A and 15B are connected by a sheet-like second driving connection member 40B. As shown in FIG. 21 and FIG. 22, each of these driving connection members 40A and 40B is placed on the source electrode 32 of each of the semiconductor elements 30A and 30B by discharging a rolled flexible sheet 840 from a nozzle 801 and then bonded. In other words, each of the driving connection members 40A and 40B is not molded in advance by a mold or the like. Therefore, the cost of each of the driving connection members 40A and 40B can be reduced compared to a metal clip.

The sheet 840 is made of a conductor portion and a solder layer covering the conductor portion, and when placed on the source electrode 32 of each semiconductor element 30A, 30B, the sheet 840 is pressed against the source electrode 32 by a heated joining jig 820, causing the solder layer of the sheet 840 to melt and be joined to the source electrode 32. Therefore, compared to when a metal clip is ultrasonically joined to a semiconductor element, the force applied to each semiconductor element 30A, 30B is smaller, reducing the risk of damage to each semiconductor element 30A, 30B.

(effect)
According to the semiconductor device 1A of this embodiment, the following effects can be obtained.
(1-1) The connection surface of the first connection portion 41 of the first drive connection member 40A that connects the source electrode 32 of the first semiconductor element 30A to the second mounting layer 14A and comes into contact with the source electrode 32 is formed of a solder layer 45. According to this configuration, the source electrode 32 of the first semiconductor element 30A and the first connection portion 41 are pressed against each other by a heated joining jig 820, melting the solder layer 45 and joining them. Therefore, the source electrode 32 of the first semiconductor element 30A and the first connection portion 41 can be joined without using ultrasonic welding. In the joining using the joining jig 820, the force applied to the first semiconductor element 30A is smaller than that in the case of ultrasonic welding, so that the risk of the first semiconductor element 30A being damaged can be reduced.

The second drive connection member 40B that connects the source electrode 32 of the second semiconductor element 30B and the second mounting layer 14B has the same configuration as the first drive connection member 40A, and therefore has the same effect as the first drive connection member 40A. That is, even if the first connection portion 41 of the second drive connection member 40B is joined to the source electrode 32 of the second semiconductor element 30B, the risk of damage to the second semiconductor element 30B can be reduced. Therefore, the yield of the semiconductor device 1A is increased, and the manufacturing cost of the semiconductor device 1A can be reduced.

(1-2) The first drive connection member 40A is made of a metal sheet that is strip-shaped when viewed from the thickness direction z. With this configuration, compared to a configuration in which the source electrode 32 of the first semiconductor element 30A and the second mounting layers 14A, 14B are connected by multiple wires, even if the first semiconductor element 30A is repeatedly switched, it is possible to suppress a decrease in the reliability of the electrical connection between the source electrode 32 and the second mounting layers 14A, 14B. Note that the second drive connection member 40B has the same configuration as the first drive connection member 40A, and therefore has the same effect as the first drive connection member 40A. In other words, even if the second semiconductor element 30B is repeatedly switched, it is possible to suppress a decrease in the reliability of the electrical connection between the source electrode 32 and the conductive layers 15A, 15B.

(1-3) The first connection portion 41 of the first drive connection member 40A has a main surface side solder layer 45s, a back surface side solder layer 45r connected to the source electrode 32 of the first semiconductor element 30A, and a side surface side solder layer 45a connecting the main surface side solder layer 45s and the back surface side solder layer 45r in the thickness direction z. With this configuration, when the heated joining jig 820 is pressed against the main surface side solder layer 45s, the heat of the joining jig 820 is transferred to the back surface side solder layer 45r via the side surface side solder layer 45a. Therefore, the back surface side solder layer 45r is easily melted, and the first connection portion 41 and the source electrode 32 can be reliably joined. Note that the second drive connection member 40B has the same configuration as the first drive connection member 40A, and therefore has the same effect as the first drive connection member 40A. That is, the first connection portion 41 of the second drive connection member 40B and the source electrode 32 of the second semiconductor element 30B can be reliably joined.

(1-4) A recess 46 is formed in the first connection portion 41 of the first drive connection member 40A. With this configuration, the sealing resin 60 enters the recess 46 of the first connection portion 41, so the contact area between the first connection portion 41 and the sealing resin 60 is increased. Therefore, peeling between the first connection portion 41 and the sealing resin 60 can be suppressed. Note that the first connection portion 41 of the second drive connection member 40B has a recess 46, just like the first drive connection member 40A, so the second drive connection member 40B can also suppress peeling between the first connection portion 41 and the sealing resin 60, just like the first drive connection member 40A.

(1-5) The connection surface of the second connection portion 42 of the first drive connection member 40A that comes into contact with the second mounting layers 14A, 14B is formed of a solder layer 45. With this configuration, the second mounting layers 14A, 14B and the second connection portion 42 are pressed against each other by a heated joining jig 820, melting the solder layer 45 and joining them. In this way, the second mounting layers 14A, 14B and the second connection portion 42 can be joined by the same joining method as the joining method of the first connection portion 41 and the source electrode 32, without using ultrasonic welding. Therefore, the joining process (fourth joining process) of the first drive connection member 40A can be performed by the same joining device (bonding device 800), thereby reducing the manufacturing cost of the semiconductor device 1A.

The second drive connection member 40B that connects the source electrode 32 of the second semiconductor element 30B and the second mounting layer 14B has the same configuration as the first drive connection member 40A, and therefore has the same effect as the first drive connection member 40A. In other words, the bonding process (fourth bonding process) of the second drive connection member 40B can be performed by the same bonding device (bonding device 800), so the manufacturing cost of the semiconductor device 1A can be reduced.

(1-6) The second connection portion 42 of the first drive connection member 40A has a main surface side solder layer 45s, a back surface side solder layer 45r connected to the source electrode 32 of the first semiconductor element 30A, and a side surface side solder layer 45a connecting the main surface side solder layer 45s and the back surface side solder layer 45r in the thickness direction z. With this configuration, when the heated joining jig 820 is pressed against the main surface side solder layer 45s, the heat of the joining jig 820 is transferred to the back surface side solder layer 45r via the side surface side solder layer 45a. Therefore, the back surface side solder layer 45r is easily melted, and the second connection portion 42 and the second mounting layers 14A and 14B can be reliably joined. Since the second drive connection member 40B has the same configuration as the first drive connection member 40A, the same effect as the first drive connection member 40A can be obtained. In other words, the second connection portion 42 of the second drive connection member 40B can be reliably joined to the conductive layers 15A and 15B.

(1-7) A recess 47 is formed in the second connection portion 42 of the first drive connection member 40A. With this configuration, the sealing resin 60 enters the recess 47 of the second connection portion 42, so the contact area between the second connection portion 42 and the sealing resin 60 is increased. Therefore, peeling between the second connection portion 42 and the sealing resin 60 can be suppressed. Note that the second connection portion 42 of the second drive connection member 40B has a recess 47, just like the first drive connection member 40A, so the second drive connection member 40B can also suppress peeling between the second connection portion 42 and the sealing resin 60, just like the first drive connection member 40A.

(1-8) The second connection portion 42 of the first drive connection member 40A has an extension portion 48 that extends away from the surface (drive connection surface) of the second mounting layer 14A, 14B as it moves away from the first connection portion 41 in the second direction y. With this configuration, the sealing resin 60 comes into contact with both the main surface side and the back surface side of the extension portion 48, so the contact area between the second connection portion 42 and the sealing resin 60 is increased. Therefore, peeling between the second connection portion 42 and the sealing resin 60 can be suppressed. Note that the second connection portion 42 of the second drive connection member 40B has an extension portion 48 similar to the first drive connection member 40A, so that the second drive connection member 40B can also suppress peeling between the second connection portion 42 and the sealing resin 60 similar to the first drive connection member 40A.

(1-9) The conductor portion 44 of the first drive connection member 40A is made of Cu. With this configuration, the bond between the conductor portion 44 and the solder layer 45 can be improved compared to when the conductor portion 44 is made of, for example, Al.

(1-10) In each of the drive connection members 40A and 40B, the solder layer 45 is formed by immersing the conductor portion 44 in a tank that contains solder. With this configuration, the solder layer 45 can be easily formed around the conductor portion 44.

(1-11) Each of the drive connection members 40A, 40B is formed from a flexible sheet 840. With this configuration, each of the drive connection members 40A, 40B can be formed in the same way as a wire by the bonding device 800, so the degree of freedom in the shape of each of the drive connection members 40A, 40B can be increased compared to pre-formed clips.

(1-12) The semiconductor device 1A is configured as a half-bridge switching circuit in which a plurality of first semiconductor elements 30A are connected in parallel to one another, a plurality of second semiconductor elements 30B are connected in parallel to one another, and the first semiconductor elements 30A and the second semiconductor elements 30B are connected in series. With this configuration, a large current can be supplied to the semiconductor device 1A.

(1-13) Each first semiconductor element 30A mounted on the first mounting layers 13A, 13B is disposed at the end of the first mounting layers 13A, 13B facing the second mounting layers 14A, 14B in the second direction y. The second connection portion 42 of the first driving connection member 40A is joined to the end of the second mounting layers 14A, 14B facing the first mounting layers 13A, 13B in the second direction y. With this configuration, the length of the first driving connection member 40A can be shortened. Therefore, the inductance caused by the first driving connection member 40A can be reduced.

(1-14) Each second semiconductor element 30B mounted on the second mounting layers 14A, 14B is disposed at the end of the second mounting layers 14A, 14B facing the conductive layers 15A, 15B in the second direction y. The second connection portion 42 of the second driving connection member 40B is joined to the end of the conductive layers 15A, 15B facing the second mounting layers 14A, 14B in the second direction y. With this configuration, the length of the second driving connection member 40B can be shortened. Therefore, the inductance caused by the second driving connection member 40B can be reduced.

(1-15) The first mounting layers 13A, 13B and the second mounting layers 14A, 14B are arranged adjacent to each other in the second direction y. This configuration allows the length of the first drive connection member 40A to be shortened.

(1-16) The second mounting layers 14A, 14B and the conductive layers 15A, 15B are arranged adjacent to each other in the second direction y. This configuration allows the length of the second drive connection member 40B to be shortened.

(1-17) The first mounting layer 13A and the first mounting layer 13B are connected by a flat board connection member 90A, the second mounting layer 14A and the second mounting layer 14B are connected by a flat board connection member 90B, and the conductive layer 15A and the conductive layer 15B are connected by a flat board connection member 90C. With this configuration, even if the board on which the mounting layers 13A, 13B, 14A, and 14B and the conductive layers 15A and 15B are formed is divided into the first board 11 and the second board 12, the first semiconductor elements 30A can be connected in parallel and the second semiconductor elements 30B can be connected in parallel through the board connection members 90A to 90C. In this way, by dividing the board into the first board 11 and the second board 12, it is possible to suppress a decrease in the strength of the board.

[Second embodiment]
A semiconductor device 1B of the second embodiment will be described with reference to Figures 23 to 26. The semiconductor device 1B of the present embodiment differs from the semiconductor device 1A of the first embodiment mainly in the shapes and positions of the second mounting layers 14A, 14B and the conductive layers 15A, 15B. In the following description, components common to the semiconductor device 1A of the first embodiment are given the same reference numerals, and descriptions thereof may be omitted.

As shown in FIG. 23, the semiconductor device 1B has three second mounting layers 14C, 14D, and 14E instead of the second mounting layers 14A and 14B. Also, as shown in FIG. 23, the first mounting layers 13A and 13B, the first control layers 16A and 16B, the first detection layers 17A and 17B, the second control layers 18A and 18B, and the second detection layers 19A and 19B of the semiconductor device 1B are the same as the first mounting layers 13A and 13B, the first control layers 16A and 16B, the first detection layers 17A and 17B, the second control layers 18A and 18B, and the second detection layers 19A and 19B of the semiconductor device 1A.

24, two second mounting layers 14C and 14D are formed on the first substrate 11. The second mounting layer 14C is an example of a driving conductor.
The second mounting layer 14C is a conductor for electrically connecting the source electrodes 32 of the first semiconductor elements 30A mounted on the first mounting layer 13A to the output terminals 52A, 52B (see FIG. 23). The second mounting layer 14C is arranged so as to be adjacent to the main mounting portion 13a of the first mounting layer 13A in the second direction y. The second mounting layer 14C is arranged on the opposite side of the first detection layer 17A with respect to the main mounting portion 13a of the first mounting layer 13A in the second direction y. In other words, the main mounting portion 13a is arranged between the first detection layer 17A and the second mounting layer 14C in the second direction y. The second mounting layer 14C is arranged closer to the substrate side surface 11d than the terminal side connection portion 13b of the first mounting layer 13A in the first direction x.

When viewed from the thickness direction z, the shape of the second mounting layer 14C is a rectangle whose long side is in the first direction x and whose short side is in the second direction y. When viewed from the second direction y, the second mounting layer 14C extends in the first direction x so as to overlap with all of the multiple first semiconductor elements 30A mounted on the first mounting layer 13A. The length in the first direction x of the second mounting layer 14C is approximately equal to the length in the first direction x of the main mounting portion 13a of the first mounting layer 13A.

Similarly to the second mounting layer 14A of the first embodiment, the second mounting layer 14C has a main mounting surface 14s and a back mounting surface 14r (see FIG. 26) that face opposite sides in the thickness direction z. The main mounting surface 14s is an example of a drive connection surface. The main mounting surface 14s faces the same side as the main substrate surface 11s of the first substrate 11, and the back mounting surface 14r faces the same side as the back substrate surface 11r of the first substrate 11.

The second mounting layer 14C is a conductor for electrically connecting the drain electrode 31 (see FIG. 26) of each second semiconductor element 30B mounted on the second mounting layer 14C to each output terminal 52A, 52B. The second mounting layer 14D is arranged between the main conductive portion 15a of the conductive layer 15A and the second detection layer 19A in the second direction y. In this embodiment, the second mounting layer 14D is arranged so as to be adjacent to the main conductive portion 15a of the conductive layer 15A and the second detection layer 19A in the second direction y. The second mounting layer 14D is arranged on the opposite side of the second detection layer 19A from the second control layer 18A in the second direction y. The main conductive portion 15a of the conductive layer 15A is arranged on the opposite side of the second detection layer 19A from the second mounting layer 14D in the second direction y. This main conductive portion 15a is arranged so as to be adjacent to the second mounting layer 14C in the second direction y. In other words, the main conductive portion 15a is disposed on the opposite side of the second mounting layer 14C from the main mounting portion 13a of the first mounting layer 13A in the second direction y.

The shape of the second mounting layer 14D as viewed from the thickness direction z is the same as the shape of the second mounting layer 14C as viewed from the thickness direction z. Furthermore, the dimensions of the second mounting layer 14D in the first direction x and the second direction y are the same as the dimensions of the second mounting layer 14C in the first direction x and the second direction y. Furthermore, the second mounting layers 14D are aligned in the first direction x and spaced apart in the second direction y.

The conductive layer 15A has a different shape from the conductive layer 15A of the first embodiment when viewed from the thickness direction z. In this embodiment, the conductive layer 15A has an L-shape when viewed from the thickness direction z. The terminal side connection portion 15b of the conductive layer 15A extends in the second direction y from the main conductive portion 15a toward the substrate side surface 11b. The terminal side connection portion 15b is located closer to the substrate side surface 11c than the second mounting layer 14D in the first direction x. In other words, the second mounting layer 14D is disposed closer to the substrate side surface 11d than the terminal side connection portion 15b.

A plurality of first semiconductor elements 30A are mounted on the first mounting layer 13A. In this embodiment, the positions in the second direction y of the plurality of first semiconductor elements 30A mounted on the main mounting portion 13a of the first mounting layer 13A are different from the positions in the second direction y of the plurality of first semiconductor elements 30A mounted on the main mounting portion 13a of the first embodiment. That is, in this embodiment, the plurality of first semiconductor elements 30A are arranged at the end of the main mounting portion 13a of the first mounting layer 13A on the first detection layer 17A side (substrate side surface 11a side) in the second direction y. The first semiconductor element 30A mounted on the first mounting layer 13A is arranged in such an orientation that the main source electrode 32A is on the second mounting layer 14C side, and the first source electrode 32B, the second source electrode 32C, and the gate electrode 33 are on the first detection layer 17A side.

The first source electrode 32B of the first semiconductor element 30A mounted on the first mounting layer 13A is connected to the first detection layer 17A by the first detection connection member 23A. The gate electrode 33 of the first semiconductor element 30A mounted on the first mounting layer 13A is connected to the first control layer 16A by the first control connection member 22A. The first semiconductor element 30A arranged closest to the substrate side surface 11c among the multiple first semiconductor elements 30A mounted on the first mounting layer 13A is arranged closer to the substrate side surface 11c than the first control layer 16A and the first detection layer 17A, so that the first detection connection member 23A and the first control connection member 22A connected to that first semiconductor element 30A extend obliquely toward the substrate side surface 11d as they approach the substrate side surface 11a. The first detection connection member 23A and the first control connection member 22A connected to the remaining four first semiconductor elements 30A each extend along the second direction y.

The main source electrode 32A of the first semiconductor element 30A and the second mounting layer 14C are connected by a first driving connection member 40A. The first driving connection member 40A is connected to the end of the second mounting layer 14C on the main mounting portion 13a side of the first mounting layer 13A in the second direction y. The configuration of the first driving connection member 40A of this embodiment is the same as the configuration of the first driving connection member 40A of the first embodiment. In addition, the bonding method of the first driving connection member 40A of this embodiment to the main source electrode 32A and the second mounting layer 14C is the same as the bonding method of the first driving connection member 40A of the first embodiment to the main source electrode 32A and the second mounting layer 14A. As shown in FIG. 26, the first driving connection member 40A is formed so that the joint portion 43 is mountain-shaped, similar to the first driving connection member 40A of the first embodiment.

A plurality of second semiconductor elements 30B are mounted on the second mounting layer 14D. The second semiconductor elements 30B are aligned in the second direction y and spaced apart in the first direction x. Each of the second semiconductor elements 30B is disposed at an end of the second mounting layer 14D on the second detection layer 19A side in the second direction y. The second semiconductor elements 30B mounted on the second mounting layer 14D are oriented such that the main source electrode 32A faces the main conductive portion 15a of the conductive layer 15A, and the first source electrode 32B, the second source electrode 32C, and the gate electrode 33 face the second detection layer 19B side.

The second source electrode 32C of the second semiconductor element 30B mounted on the second mounting layer 14D is connected to the second detection layer 19A by a second detection connection member 25A. The gate electrode 33 of the second semiconductor element 30B mounted on the second mounting layer 14D is connected to the second control layer 18B by a second control connection member 24A. The second detection connection member 25A and the second control connection member 24A each extend along the second direction y.

As shown in FIG. 24, in this embodiment, the arrangement of the first control connection member 22A and the first detection connection member 23A in the first direction x is different from the arrangement of the second control connection member 24A and the second detection connection member 25A in the first direction x.

The main source electrode 32A of the second semiconductor element 30B and the main conductive portion 15a of the conductive layer 15A are connected by a second drive connection member 40B. The second drive connection member 40B is connected to the end of the main conductive portion 15a on the second mounting layer 14D side in the second direction y. The configuration of the second drive connection member 40B of this embodiment is the same as the configuration of the second drive connection member 40B of the first embodiment. In addition, the method of joining the second drive connection member 40B of this embodiment to the main source electrode 32A and the conductive layer 15A is the same as the method of joining the second drive connection member 40B of the first embodiment to the main source electrode 32A and the conductive layer 15A of the second drive connection member 40B. As shown in FIG. 26, the second drive connection member 40B is formed so that the coupling portion 43 is mountain-shaped, similar to the second drive connection member 40B of the first embodiment.

In this embodiment, as shown in FIG. 24, the positional relationship between the first connection portion 41 and the second connection portion 42 of the first drive connection member 40A in the second direction y is reversed to the positional relationship between the first connection portion 41 and the second connection portion 42 of the second drive connection member 40B in the second direction y.

25, a second mounting layer 14E is formed on the second substrate 12. The second mounting layer 14E is an example of a driving conductor.
The second mounting layer 14E is a conductor for electrically connecting the source electrodes 32 of the first semiconductor elements 30A mounted on the first mounting layer 13B to the output terminals 52A, 52B (see FIG. 23) and for electrically connecting the drain electrodes 31 of the second semiconductor elements 30B mounted on the second mounting layer 14E to the output terminals 52A, 52B (see FIG. 26). The second mounting layer 14E has a first main mounting portion 14c, a second main mounting portion 14d, and a terminal side connecting portion 14e. In this embodiment, the second mounting layer 14E is configured as a single component in which the first main mounting portion 14c, the second main mounting portion 14d, and the terminal side connecting portion 14e are integrally formed.

The first main mounting portion 14c is a conductor for electrically connecting the source electrode 32 of each first semiconductor element 30A mounted on the first mounting layer 13B to each output terminal 52A, 52B. The first main mounting portion 14c is arranged so as to be adjacent to the main mounting portion 13c of the first mounting layer 13B in the second direction y. The first main mounting portion 14c is arranged on the opposite side of the first detection layer 17B with respect to the main mounting portion 13c in the second direction y. The first main mounting portion 14c is arranged apart from the second mounting layer 14C in the first direction x while being aligned with the second mounting layer 14C (see FIG. 24) in the second direction y. The shape of the first main mounting portion 14c in a plan view is a rectangle with the long side direction being the first direction x and the short side direction being the second direction y. The dimension of the first main mounting portion 14c in the second direction y is equal to the dimension of the second mounting layer 14C in the second direction y.

The second main mounting portion 14d is a conductor for electrically connecting the drain electrode 31 of each second semiconductor element 30B mounted on the second mounting layer 14E to each output terminal 52A, 52B. The second main mounting portion 14d is disposed between the conductive layer 15B and the second detection layer 19B in the second direction y. In this embodiment, the second main mounting portion 14d is disposed adjacent to the conductive layer 15B and the second detection layer 19B. The second main mounting portion 14d is disposed on the opposite side of the second detection layer 19B from the second control layer 18B in the second direction y. The second main mounting portion 14d is disposed apart from the second mounting layer 14D in the first direction x while being aligned with the second mounting layer 14D (see FIG. 24) in the second direction y. The conductive layer 15B is disposed on the opposite side of the second detection layer 19B from the second main mounting portion 14d. The conductive layer 15B is disposed adjacent to the main mounting portion 13c of the first mounting layer 13B in the second direction y. In other words, the conductive layer 15B is disposed on the opposite side of the main mounting portion 13c of the first mounting layer 13B with respect to the second main mounting portion 14d in the second direction y.

The shape of the second main mounting portion 14d in a plan view is the same as the shape of the first main mounting portion 14c in a plan view. The dimensions of the second main mounting portion 14d in the first direction x and the second direction y are the same as the dimensions of the first main mounting portion 14c in the first direction x and the second direction y. The second main mounting portion 14d is aligned with the second mounting layer 14C in the first direction x and spaced apart from the second mounting layer 14C in the second direction y.

The terminal side connection portion 14e extends in the second direction y and connects the first main mounting portion 14c and the second main mounting portion 14d. The terminal side connection portion 14e extends further toward the board side surface 11a than the first main mounting portion 14c and extends further toward the board side surface 11b than the second main mounting portion 14d. When viewed from the second direction y, the terminal side connection portion 14e overlaps with the first control layer 16B and the first detection layer 17B, and overlaps with the second control layer 18B and the second detection layer 19B. The terminal side connection portion 14e is connected to multiple connection portions 52b of each output terminal 52A, 52B.

Similarly to the second mounting layer 14C, the second mounting layer 14E has a main mounting surface 14s and a back mounting surface 14r (see FIG. 26) that face opposite sides in the thickness direction z. The main mounting surface 14s is an example of a drive connection surface. The main mounting surface 14s faces the same side as the main substrate surface 12s of the second substrate 12, and the back mounting surface 14r faces the same side as the back substrate surface 12r of the second substrate 12.

The conductive layer 15B is disposed between the first main mounting portion 14c and the second main mounting portion 14d in the second direction y. The conductive layer 15B is aligned with the main conductive portion 15a (see FIG. 24) of the conductive layer 15A in the second direction y and arranged at a distance from the main conductive portion 15a in the first direction x. The shape of the conductive layer 15B as viewed from the thickness direction z is a rectangle whose long side direction is the first direction x and whose short side direction is the second direction y. The length of the conductive layer 15B in the first direction x is equal to the length of the main mounting portion 13c of the first mounting layer 13B in the first direction x.

A plurality of first semiconductor elements 30A are mounted on the first mounting layer 13B. In this embodiment, the positions in the second direction y of the plurality of first semiconductor elements 30A mounted on the main mounting portion 13c of the first mounting layer 13B are different from the positions in the second direction y of the plurality of first semiconductor elements 30A mounted on the main mounting portion 13a of the first embodiment. That is, in this embodiment, the plurality of first semiconductor elements 30A are arranged at the end of the main mounting portion 13c of the first mounting layer 13B on the first detection layer 17B side (substrate side surface 11a side) in the second direction y. The first semiconductor element 30A mounted on the first mounting layer 13B is arranged in such an orientation that the main source electrode 32A is on the first main mounting portion 14c side of the second mounting layer 14E, and the first source electrode 32B, the second source electrode 32C, and the gate electrode 33 are on the first detection layer 17B side.

The first source electrode 32B of the first semiconductor element 30A mounted on the first mounting layer 13B is connected to the first detection layer 17B by the first detection connection member 23B. The gate electrode 33 of the first semiconductor element 30A mounted on the first mounting layer 13B is connected to the first control layer 16B by the first control connection member 22B. The first semiconductor element 30A arranged closest to the substrate side surface 11d among the multiple first semiconductor elements 30A mounted on the first mounting layer 13B is arranged closer to the substrate side surface 11d than the first control layer 16B and the first detection layer 17B, so that the first detection connection member 23B and the first control connection member 22B connected to that first semiconductor element 30A extend obliquely toward the substrate side surface 11c as they approach the substrate side surface 11a. The first detection connection member 23B and the first control connection member 22B connected to the remaining four first semiconductor elements 30A each extend along the second direction y.

The main source electrode 32A of the first semiconductor element 30A and the first main mounting portion 14c of the second mounting layer 14E are connected by a first driving connection member 40A. The first driving connection member 40A is connected to the end of the first main mounting portion 14c on the main mounting portion 13a side of the first mounting layer 13A in the second direction y. The configuration of the first driving connection member 40A of this embodiment is the same as the configuration of the first driving connection member 40A of the first embodiment. In addition, the bonding method of the main source electrode 32A and the second mounting layer 14E of the first driving connection member 40A is the same as the bonding method of the main source electrode 32A and the second mounting layer 14B of the first driving connection member 40A of the first embodiment. Although not shown, the first driving connection member 40A is formed so that the connecting portion 43 is mountain-shaped, similar to the first driving connection member 40A of the first embodiment.

A plurality of second semiconductor elements 30B are mounted on the second main mounting portion 14d of the second mounting layer 14E. The plurality of second semiconductor elements 30B are aligned in the second direction y and spaced apart from each other in the first direction x. Each of the plurality of second semiconductor elements 30B is disposed at the end of the second main mounting portion 14d on the second detection layer 19B side in the second direction y. The second semiconductor element 30B mounted on the second main mounting portion 14d is oriented such that the main source electrode 32A faces the conductive layer 15B, and the first source electrode 32B, the second source electrode 32C, and the gate electrode 33 face the second detection layer 19B.

The second source electrode 32C of the second semiconductor element 30B mounted on the second mounting layer 14D is connected to the second detection layer 19B by a second detection connection member 25B. The gate electrode 33 of the second semiconductor element 30B mounted on the second mounting layer 14D is connected to the second control layer 18B by a second control connection member 24B. The second detection connection member 25B and the second control connection member 24B each extend along the second direction y.

The main source electrode 32A and the conductive layer 15B of the second semiconductor element 30B are connected by a second drive connection member 40B. The second drive connection member 40B is connected to the end of the conductive layer 15B on the second main mounting portion 14d side of the second mounting layer 14E in the second direction y. The configuration of the second drive connection member 40B of this embodiment is the same as the configuration of the second drive connection member 40B of the first embodiment. In addition, the bonding method of the main source electrode 32A and the conductive layer 15B of the second drive connection member 40B of this embodiment is the same as the bonding method of the main source electrode 32A and the conductive layer 15B of the second drive connection member 40B of the first embodiment. Although not shown, the second drive connection member 40B is formed so that the connecting portion 43 is mountain-shaped, similar to the second drive connection member 40B of the first embodiment.

In this embodiment, as shown in FIG. 25, the positional relationship between the first connection portion 41 and the second connection portion 42 of the first drive connection member 40A in the second direction y is reversed to the positional relationship between the first connection portion 41 and the second connection portion 42 of the second drive connection member 40B in the second direction y.

As shown in Figures 24 and 25, the main mounting portion 13a of the first mounting layer 13A and the main mounting portion 13c of the first mounting layer 13B are connected by a substrate connection member 90A. This electrically connects the first mounting layer 13A and the first mounting layer 13B, so that the drain electrodes 31 of the multiple first semiconductor elements 30A mounted on the first mounting layer 13A are electrically connected to the drain electrodes 31 of the multiple first semiconductor elements 30A mounted on the first mounting layer 13B. Since the first mounting layer 13A is electrically connected to the first input terminal 51A, the drain electrodes 31 of the first semiconductor elements 30A mounted on the first mounting layers 13A and 13B are electrically connected to the first input terminal 51A.

The second mounting layer 14C and the first main mounting portion 14c of the second mounting layer 14E are connected by a substrate connection member 90D. The substrate connection member 90D has the same configuration as the substrate connection member 90A. Since the second mounting layer 14C and the second mounting layer 14E are electrically connected by the substrate connection member 90D, the first driving connection member 40A connected to the second mounting layer 14C and the first driving connection member 40A connected to the second mounting layer 14E are electrically connected. Since the first driving connection member 40A is connected to the main source electrode 32A of the first semiconductor element 30A, the source electrode 32 of the first semiconductor element 30A mounted on the first mounting layer 13A and the source electrode 32 of the first semiconductor element 30A mounted on the first mounting layer 13B are electrically connected. The second mounting layer 14E is electrically connected to the first output terminal 52A and the second output terminal 52B, so that the source electrode 32 of the first semiconductor element 30A mounted on the first mounting layers 13A and 13B is electrically connected to each output terminal 52A and 52B.

The second mounting layer 14D and the second main mounting portion 14d of the second mounting layer 14E are connected by a substrate connection member 90B. The substrate connection member 90B has the same configuration as the substrate connection member 90A. Since the second mounting layer 14D and the second mounting layer 14E are electrically connected by the substrate connection member 90B, the drain electrodes 31 of the multiple second semiconductor elements 30B mounted on the second mounting layer 14D are electrically connected to the drain electrodes 31 of the multiple second semiconductor elements 30B mounted on the second main mounting portion 14d of the second mounting layer 14E. Since the second mounting layer 14E is electrically connected to each output terminal 52A, 52B, the drain electrodes 31 of the second semiconductor elements 30B mounted on the second mounting layers 14D, 14E are electrically connected to each output terminal 52A, 52B.

The main conductive portion 15a of the conductive layer 15A and the conductive layer 15B are connected by a substrate connection member 90C. The substrate connection member 90C has the same configuration as the substrate connection member 90A. Since the substrate connection member 90C electrically connects the conductive layer 15A and the conductive layer 15B, the second drive connection member 40B connected to the conductive layer 15A and the second drive connection member 40B connected to the conductive layer 15B are electrically connected. Since the second drive connection member 40B is connected to the main source electrode 32A of the second semiconductor element 30B, the source electrode 32 of the second semiconductor element 30B mounted on the second mounting layer 14D and the source electrode 32 of the second semiconductor element 30B mounted on the second mounting layer 14E are electrically connected. Since the second mounting layer 14D is electrically connected to the second input terminal 51B, the source electrode 32 of the second semiconductor element 30B mounted on the second mounting layers 14D and 14E is electrically connected to the second input terminal 51B.

According to the semiconductor device 1B of the present embodiment, in addition to the effects (1-1) to (1-12) of the semiconductor device 1A of the first embodiment, the following effects can be obtained.
(2-1) Each of the first semiconductor elements 30A mounted on the first mounting layers 13A, 13B is disposed at an end of the first mounting layers 13A, 13B on the first detection layer 17A, 17B side in the second direction y. With this configuration, the length of the first control connecting members 22A, 22B can be shortened, and the length of the first detection connecting members 23A, 23B can be shortened. Therefore, the inductance caused by the length of the first control connecting members 22A, 22B can be reduced, and the inductance caused by the length of the first detection connecting members 23A, 23B can be reduced.

(2-2) Each second semiconductor element 30B mounted on the second mounting layer 14C, 14E is disposed at the end of the second mounting layer 14C, 14E on the second detection layer 19A, 19B side in the second direction y. With this configuration, the length of the second control connection members 24A, 24B can be shortened, and the length of the second detection connection members 25A, 25B can be shortened. Therefore, the inductance caused by the length of the second control connection members 24A, 24B can be reduced, and the inductance caused by the length of the second detection connection members 25A, 25B can be reduced.

(2-3) The second mounting layers 14C, 14E are arranged adjacent to the second detection layers 19A, 19B in the second direction y. With this configuration, the length of the second control connection members 24A, 24B can be shortened, and the length of the second detection connection members 25A, 25B can be shortened.

(2-4) The second mounting layers 14C, 14E are arranged adjacent to the conductive layers 15A, 15B in the second direction y. With this configuration, the length of the second drive connection member 40B can be shortened. Therefore, the inductance caused by the length of the second drive connection member 40B can be reduced.

(2-5) The second mounting layer 14D and the first main mounting portion 14c of the second mounting layer 14E are connected by a flat board connection member 90B, and the second mounting layer 14C and the second main mounting portion 14d of the second mounting layer 14E are connected by a flat board connection member 90D. With this configuration, even if the board on which the mounting layers 13A, 13B, 14C, 14D, and 14E and the conductive layers 15A and 15B are formed is divided into the first board 11 and the second board 12, the first semiconductor elements 30A can be connected in parallel and the second semiconductor elements 30B can be connected in parallel through the board connection members 90A to 90D. In this way, by dividing the board into the first board 11 and the second board 12, it is possible to suppress a decrease in the strength of the board.

[Third embodiment]
A semiconductor device 1C of the third embodiment will be described with reference to Figures 27 to 38. The semiconductor device 1C of this embodiment differs from the semiconductor device 1A of the first embodiment mainly in that it includes the electrode configuration of each semiconductor element 30A, 30B and diodes 100A, 100B. In the following description, components common to the semiconductor device 1A of the first embodiment are given the same reference numerals, and description thereof may be omitted.

28, the first semiconductor element 30A has a first source electrode 32E, a second source electrode 32F, and a gate electrode 33 on its element main surface 30s. The gate electrode 33 is disposed in a recess 32y formed by the first source electrode 32E and the second source electrode 32F. In this embodiment, the first semiconductor element 30A is disposed in such a direction that the gate electrode 33 faces the substrate side surface 11d of the element main surface 30s. The first source electrode 32E and the second source electrode 32F are aligned with each other in the first direction x and spaced apart from each other in the second direction y. The electrode configuration of the second semiconductor element 30B is the same as that of the first semiconductor element 30A. The orientation of the second semiconductor element 30B is the same as that of the first semiconductor element 30A.

As shown in FIG. 27, the diodes 100A are provided according to the number of first semiconductor elements 30A. In this embodiment, since there are 10 first semiconductor elements 30A, there are 10 diodes 100A. Also, the diodes 100B are provided according to the number of second semiconductor elements 30B. In this embodiment, since there are 10 second semiconductor elements 30B, there are 10 diodes 100B. Note that the diodes 100A correspond to a second element that is different from the first element, with the first semiconductor element 30A as the first element. The diodes 100B correspond to a second element that is different from the first element, with the second semiconductor element 30B as the first element.

The first semiconductor element 30A and the diode 100A are mounted on the main mounting portion 13a of the first mounting layer 13A and the main mounting portion 13c of the first mounting layer 13B. In this embodiment, five first semiconductor elements 30A and five diodes 100A are mounted on the main mounting portion 13a of the first mounting layer 13A, and five first semiconductor elements 30A and five diodes 100A are mounted on the main mounting portion 13c of the first mounting layer 13B.

The relative positioning of the first semiconductor element 30A and the diode 100A mounted on the main mounting portion 13a of the first mounting layer 13A will be described with reference to FIG. 28. The relative positioning of the first semiconductor element 30A and the diode 100A mounted on the main mounting portion 13c of the first mounting layer 13B is similar to the relative positioning of the first semiconductor element 30A and the diode 100A mounted on the main mounting portion 13a of the first mounting layer 13A, so the description thereof will be omitted.

As shown in FIG. 28, the first semiconductor element 30A and the diode 100A are aligned in the first direction x and spaced apart from each other in the second direction y. The first semiconductor element 30A is disposed closer to the first detection layer 17A side (substrate side 11a side) than the diode 100A. In other words, the diode 100A is disposed closer to the second mounting layer 14A side (substrate side 11b side) than the first semiconductor element 30A. The first semiconductor element 30A is disposed at the end of the main mounting portion 13a of the first mounting layer 13A on the first detection layer 17A side in the second direction y, and the diode 100A is disposed at the end of the main mounting portion 13a on the second mounting layer 14A side in the second direction y. In addition, the multiple diodes 100A mounted on the first mounting layer 13A are aligned in the second direction y and spaced apart from each other in the first direction x.

As shown in FIG. 27, the second semiconductor element 30B and the diode 100B are mounted on the second mounting layer 14A and the main mounting portion 14a of the second mounting layer 14B. In this embodiment, five second semiconductor elements 30B and five diodes 100B are mounted on the second mounting layer 14A, and five second semiconductor elements 30B and five diodes 100B are mounted on the main mounting portion 14a of the second mounting layer 14B.

The positional relationship between the second semiconductor element 30B and the diode 100B mounted on the second mounting layer 14A will be described with reference to FIG. 29. The positional relationship between the second semiconductor element 30B and the diode 100B mounted on the main mounting portion 14a of the second mounting layer 14B is similar to the positional relationship between the second semiconductor element 30B and the diode 100B mounted on the second mounting layer 14A, so the description will be omitted.

As shown in FIG. 29, the second semiconductor element 30B and the diode 100B are aligned in the first direction x and spaced apart from each other in the second direction y. The second semiconductor element 30B is disposed closer to the conductive layer 15A side (substrate side 11b side) than the diode 100B. In other words, the diode 100B is disposed closer to the main mounting portion 13a side (substrate side 11a side) of the first mounting layer 13A than the second semiconductor element 30B. The second semiconductor element 30B is disposed at the end of the second mounting layer 14A on the conductive layer 15A side in the second direction y, and the diode 100B is disposed at the part of the second mounting layer 14A on the main mounting portion 13a side of the first mounting layer 13A in the second direction y. In addition, the multiple diodes 100B mounted on the second mounting layer 14A are aligned in the second direction y and spaced apart from each other in the first direction x.

As shown in FIG. 27, the diodes 100A and 100B have the same structure. In a plan view, the diodes 100A and 100B each have a rectangular shape with the long side in the first direction x and the short side in the second direction y. As shown in FIG. 30, the diodes 100A and 100B each have a diode main surface 100s and a diode back surface 100r that face opposite each other in the thickness direction z. The diode main surface 100s faces the same side as the element main surfaces 30s of the semiconductor elements 30A and 30B in the thickness direction z, and the diode back surface 100r faces the same side as the element back surfaces 30r of the semiconductor elements 30A and 30B in the thickness direction z.

A cathode electrode 101 is formed on the diode back surface 100r of each of the diodes 100A and 100B. The cathode electrode 101 is formed, for example, over the entire diode back surface 100r. An anode electrode 102 is formed on the diode main surface 100s of each of the diodes 100A and 100B. The anode electrode 102 is formed, for example, over most of the diode main surface 100s.

The cathode electrode 101 of the diode 100A corresponding to the first semiconductor element 30A mounted on the first mounting layer 13A is bonded to the main mounting portion 13a of the first mounting layer 13A via a conductive bonding material. As a result, the cathode electrode 101 of the diode 100A is electrically connected to the drain electrode 31 of the first semiconductor element 30A via the first mounting layer 13A. The cathode electrode 101 of the diode 100A corresponding to the first semiconductor element 30A mounted on the first mounting layer 13B is bonded to the main mounting portion 13c of the first mounting layer 13B via a conductive bonding material. As a result, the cathode electrode 101 of the diode 100A is electrically connected to the drain electrode 31 of the first semiconductor element 30A via the first mounting layer 13B.

The cathode electrode 101 of the diode 100B corresponding to the second semiconductor element 30B mounted on the second mounting layer 14A is bonded to the second mounting layer 14A via a conductive bonding material. As a result, the cathode electrode 101 of the diode 100B is electrically connected to the drain electrode 31 of the second semiconductor element 30B via the second mounting layer 14A. The cathode electrode 101 of the diode 100B corresponding to the second semiconductor element 30B mounted on the second mounting layer 14B is bonded to the main mounting portion 14a of the second mounting layer 14B via a conductive bonding material. As a result, the cathode electrode 101 of the diode 100B is electrically connected to the drain electrode 31 of the second semiconductor element 30B via the second mounting layer 14B.

The source electrode 32 of the first semiconductor element 30A, the anode electrode 102 of the diode 100A, and the second mounting layer 14A are connected by the first drive connection member 40A. That is, the source electrode 32 of the first semiconductor element 30A and the anode electrode 102 of the diode 100A are electrically connected. As described above, the drain electrode 31 of the first semiconductor element 30A and the cathode electrode 101 of the diode 100A are electrically connected, so the diode 100A is connected in inverse parallel to the first semiconductor element 30A. Therefore, the diode 100A can be said to be a first diode connected in inverse parallel to the first semiconductor element 30A. In addition, the first drive connection members 40A are provided according to the number of the first semiconductor elements 30A and the diodes 100A. In this embodiment, since there are ten first semiconductor elements 30A and ten diodes 100A, ten first drive connection members 40A are provided. The configuration of the conductor portion 44 and the solder layer 45 of the first drive connection member 40A is the same as the configuration of the conductor portion 44 and the solder layer 45 of the first drive connection member 40A in the first embodiment.

As shown in FIG. 31, the first drive connection member 40A has a first connection portion 41, a second connection portion 42, a third connection portion 49, a first coupling portion 43A, and a second coupling portion 43B. In this embodiment, the first drive connection member 40A is configured as a single component in which the first connection portion 41, the second connection portion 42, the third connection portion 49, the first coupling portion 43A, and the second coupling portion 43B are integrally formed.

In the first driving connection member 40A, the first connection portion 41 is a portion connected to each source electrode 32E, 32F of the first semiconductor element 30A, the second connection portion 42 is a portion connected to the second mounting layer 14A, and the third connection portion 49 is a portion connected to the anode electrode 102 of the diode 100A. In the first driving connection member 40A, the first coupling portion 43A is a portion connecting the first connection portion 41 and the third connection portion 49, and the second coupling portion 43B is a portion connecting the third connection portion 49 and the second connection portion 42. The first coupling portion 43A and the second coupling portion 43B are each formed in a mountain shape when viewed from the first direction x, similar to the coupling portion 43 of the first embodiment. In this embodiment, in the second direction y, the first connection portion 41 is located closer to the substrate side surface 11a (see FIG. 28) than the third connection portion 49, and the second connection portion 42 is located closer to the substrate side surface 11b (see FIG. 28) than the third connection portion 49. In other words, the third connection portion 49 is located between the first connection portion 41 and the second connection portion 42 in the second direction y. In the second direction y, the first linking portion 43A is located closer to the substrate side surface 11a than the second linking portion 43B.

As shown in FIG. 32, the first connection portion 41 is connected to both the first source electrode 32E and the second source electrode 32F of the first semiconductor element 30A. The first connection portion 41 is provided with a recess 46, as in the first embodiment. Also, as shown in FIG. 32, the first connection portion 41 is configured such that the conductor portion 44 is sandwiched between the main surface side solder layer 45s and the back surface side solder layer 45r in the thickness direction z. Therefore, the back surface side solder layer 45r is joined to both the first source electrode 32E and the second source electrode 32F. The conductor portion 44 constituting the first connection portion 41 includes a first end surface 44b. This first end surface 44b is not covered by the solder layer. That is, the first end surface 44b of the conductor portion 44 is exposed to the outside. Similarly to the first connection portion 41, the first coupling portion 43A has a configuration in which the conductor portion 44 is sandwiched between the main surface side solder layer 45s and the back surface side solder layer 45r in the thickness direction z.

As shown in FIG. 33, the third connection portion 49 is connected to the anode electrode 102 of the diode 100A over almost the entirety in the second direction y. The third connection portion 49 is provided with a recess 49A. The shape of the recess 49A in plan view is rectangular with the long side direction being the first direction x and the short side direction being the second direction y, similar to the recess 47. The shape of the recess 49A in plan view can be changed arbitrarily. For example, the shape of the recess 49A in plan view may be an oval shape, an ellipse shape, a circle, or the like. Also, as shown in FIG. 33, the third connection portion 49 is configured such that the conductor portion 44 is sandwiched between the main surface side solder layer 45s and the back surface side solder layer 45r in the thickness direction z, similar to the first connection portion 41. Therefore, the back surface side solder layer 45r is joined to the anode electrode 102 of the diode 100A. Similarly to the first connection portion 41, the second connection portion 43B has a configuration in which the conductor portion 44 is sandwiched between the main surface side solder layer 45s and the back surface side solder layer 45r in the thickness direction z.

The third connection portion 49 has a connection surface 49a that contacts the anode electrode 102. The connection surface 49a is formed as a plane perpendicular to the thickness direction z. The connection surface 49a is a portion of the surface of the third connection portion 49 that faces the anode electrode 102 in the thickness direction z and that contacts the anode electrode 102. In this embodiment, the entire surface of the surface of the third connection portion 49 that faces the anode electrode 102 in the thickness direction z contacts the anode electrode 102. Therefore, the surface of the third connection portion 49 that faces the anode electrode 102 forms the connection surface 49a.

As shown in FIG. 34, the second connection portion 42 has a configuration in which the conductor portion 44 is sandwiched between the main surface side solder layer 45s and the back surface side solder layer 45r in the thickness direction z, similar to the first connection portion 41. The second connection portion 42 has a recess 47 and an extension portion 48, similar to the first embodiment. In this embodiment, similar to the first embodiment, the conductor main surface 44s of the conductor portion 44 constituting the extension portion 48 is covered by the main surface side solder layer 45s, the conductor back surface 44r of the conductor portion 44 constituting the extension portion 48 is covered by the back surface side solder layer 45r, and the conductor side surface 44a of the conductor portion 44 constituting the extension portion 48 is covered by the side surface side solder layer 45a. On the other hand, the second end surface 44c of the conductor portion 44 constituting the extension portion 48 is not covered by the solder layer. That is, the second end surface 44c of the conductor portion 44 is exposed to the outside.

The source electrode 32 of the second semiconductor element 30B, the anode electrode 102 of the diode 100B, and the main conductive portion 15a of the conductive layer 15A are connected by the second drive connection member 40B. That is, the source electrode 32 of the second semiconductor element 30B and the anode electrode 102 of the diode 100B are electrically connected. As described above, the drain electrode 31 of the second semiconductor element 30B and the cathode electrode 101 of the diode 100B are electrically connected, so the diode 100B is connected in inverse parallel to the second semiconductor element 30B. Therefore, the diode 100B can be said to be a second diode connected in inverse parallel to the second semiconductor element 30B. The second drive connection member 40B is provided according to the number of the second semiconductor elements 30B and the diodes 100B. In this embodiment, since there are ten second semiconductor elements 30B and ten diodes 100B, ten second drive connection members 40B are provided. The configuration of the conductor portion 44 and the solder layer 45 of the second drive connection member 40B is the same as the configuration of the conductor portion 44 and the solder layer 45 of the second drive connection member 40B in the first embodiment.

As shown in FIG. 35, the second drive connection member 40B has a first connection portion 41, a second connection portion 42, a third connection portion 49, a first coupling portion 43A, and a second coupling portion 43B, similar to the first drive connection member 40A. In this embodiment, the second drive connection member 40B is configured as a single component in which the first connection portion 41, the second connection portion 42, the third connection portion 49, the first coupling portion 43A, and the second coupling portion 43B are integrally formed, similar to the first drive connection member 40A.

In the second drive connection member 40B, the first connection portion 41 is a portion connected to each source electrode 32E, 32F of the second semiconductor element 30B, the second connection portion 42 is a portion connected to the main conductive portion 15a of the conductive layer 15A, and the third connection portion 49 is a portion connected to the anode electrode 102 of the diode 100B. In the second drive connection member 40B, the first coupling portion 43A is a portion connecting the first connection portion 41 and the third connection portion 49, and the second coupling portion 43B is a portion connecting the first connection portion 41 and the second connection portion 42. In this embodiment, in the second direction y, the third connection portion 49 is located closer to the substrate side surface 11a (see FIG. 28) than the first connection portion 41, and the second connection portion 42 is located closer to the substrate side surface 11b (see FIG. 28) than the first connection portion 41. In other words, the first connection portion 41 is located between the third connection portion 49 and the second connection portion 42 in the second direction y. In the second direction y, the first linking portion 43A is located closer to the substrate side surface 11a than the second linking portion 43B. The first linking portion 43A and the second linking portion 43B are each formed in a mountain shape when viewed from the first direction x, similar to the linking portion 43 in the first embodiment.

As shown in FIG. 36, the third connection portion 49 is connected to the entire anode electrode 102 of the diode 100B in the second direction y. The third connection portion 49 is provided with a recess 49A. The shape of the recess 49A as viewed from the thickness direction z is a rectangle with the long side direction being the first direction x and the short side direction being the second direction y, similar to the recess 47. The shape of the recess 49A as viewed from the thickness direction z can be changed arbitrarily. For example, the shape of the recess 49A as viewed from the thickness direction z may be an oval shape, an ellipse shape, a circle shape, or the like. Also, as shown in FIG. 36, the third connection portion 49 is configured such that the conductor portion 44 is sandwiched between the main surface side solder layer 45s and the back surface side solder layer 45r in the thickness direction z, similar to the first connection portion 41 of the first embodiment. Therefore, the back surface side solder layer 45r is joined to the anode electrode 102 of the diode 100B. The conductor portion 44 constituting the third connection portion 49 includes a first end surface 44b. This first end surface 44b is not covered by a solder layer. In other words, the first end surface 44b of the conductor portion 44 of the third connection portion 49 is exposed to the outside. Also, like the third connection portion 49, the first coupling portion 43A has a configuration in which the conductor portion 44 is sandwiched between the main surface side solder layer 45s and the back surface side solder layer 45r in the thickness direction z.

37, the first connection portion 41 is connected to both the first source electrode 32E and the second source electrode 32F of the second semiconductor element 30B. The first connection portion 41 is provided with a recess 46, as in the first embodiment. Also, as shown in FIG. 37, the first connection portion 41 is configured in such a way that the conductor portion 44 is sandwiched between the main surface side solder layer 45s and the back surface side solder layer 45r in the thickness direction z, as in the third connection portion 49. Therefore, the back surface side solder layer 45r is joined to both the first source electrode 32E and the second source electrode 32F. Also, the second linking portion 43B is configured in such a way that the conductor portion 44 is sandwiched between the main surface side solder layer 45s and the back surface side solder layer 45r in the thickness direction z, as in the first connection portion 41.

As shown in FIG. 38, the second connection portion 42, like the third connection portion 49, has a configuration in which the conductor portion 44 is sandwiched between the main surface side solder layer 45s and the back surface side solder layer 45r in the thickness direction z. The second connection portion 42 has a recess 47 and an extension portion 48, like the first embodiment. In this embodiment, like the first embodiment, the conductor main surface 44s of the conductor portion 44 constituting the extension portion 48 is covered by the main surface side solder layer 45s, the conductor back surface 44r of the conductor portion 44 constituting the extension portion 48 is covered by the back surface side solder layer 45r, and the conductor side surface 44a of the conductor portion 44 constituting the extension portion 48 is covered by the side surface side solder layer 45a. On the other hand, the second end surface 44c of the conductor portion 44 constituting the extension portion 48 is not covered by the solder layer. That is, the second end surface 44c of the conductor portion 44 is exposed to the outside.

In this manner, the diode 100A is connected in anti-parallel to the first semiconductor element 30A, and the diode 100B is connected in anti-parallel to the second semiconductor element 30B.
The method for joining the first driving connection member 40A to the first semiconductor element 30A, the diode 100A, and the second mounting layers 14A, 14B is the same as the method for joining the first driving connection member 40A to the first semiconductor element 30A and the second mounting layers 14A, 14B in the first embodiment. The method for joining the second driving connection member 40B to the second semiconductor element 30B, the diode 100B, and the conductive layers 15A, 15B is the same as the method for joining the second driving connection member 40B to the second semiconductor element 30B and the conductive layers 15A, 15B in the first embodiment.

According to the semiconductor device 1C of the present embodiment, in addition to the same effects as those of the semiconductor device 1A of the first embodiment, the following effects can be obtained.
(3-1) The semiconductor device 1C includes diodes 100A and 100B. In other words, the diodes 100A and 100B are built into the semiconductor device 1C. With this configuration, the length of the wiring connecting the diode 100A and the first semiconductor element 30A and the length of the wiring connecting the diode 100B and the second semiconductor element 30B can be shortened, compared to a configuration in which the diodes 100A and 100B are disposed outside the semiconductor device 1C. Therefore, the inductance caused by the length of these wirings can be reduced.

(3-2) A recess 49A is formed in the third connection portion 49 of the first drive connection member 40A. With this configuration, the sealing resin 60 enters the recess 49A of the third connection portion 49, so the contact area between the third connection portion 49 and the sealing resin 60 becomes large. Therefore, peeling between the third connection portion 49 and the sealing resin 60 can be suppressed. Note that the third connection portion 49 of the second drive connection member 40B has a recess 49A similar to the first drive connection member 40A, so the second drive connection member 40B can also suppress peeling between the third connection portion 49 and the sealing resin 60 similar to the first drive connection member 40A.

[Fourth embodiment]
A semiconductor device 1D of the fourth embodiment will be described with reference to Fig. 39 to Fig. 51. For ease of explanation, the sealing resin 210 is omitted from the semiconductor device 1D in Fig. 40, and the sealing resin 210 is indicated by a two-dot chain line in Fig. 42 and Fig. 43.

39 and 40, the semiconductor device 1D includes a sealing resin 210 that serves as a housing, a plurality of leads 220 having portions protruding from the sealing resin 210, a plurality of semiconductor elements 230 electrically connected to the plurality of leads 220, and a support substrate 240 that supports the plurality of leads 220 and the plurality of semiconductor elements 230. The semiconductor device 1D of this embodiment has a half-bridge type switching circuit, similar to the semiconductor device 1A of the first embodiment. In the description of this embodiment, for the sake of convenience, the direction in which the input leads 221 and 222 and the output lead 223 described later are arranged in the semiconductor device 1D is defined as a first direction x, and the direction perpendicular to the first direction x and the thickness direction z is defined as a second direction y.

As shown in FIG. 39, the sealing resin 210 is formed in a substantially flat plate shape. As shown in FIG. 41, the shape of the sealing resin 210 in plan view is rectangular. In this embodiment, the shape of the sealing resin 210 in plan view is rectangular with the first direction x being the long side direction and the second direction y being the short side direction. Note that the shape of the sealing resin 210 in plan view can be changed arbitrarily. For example, the shape of the sealing resin 210 in plan view may be square. In addition, a thermosetting resin is used as the material of the sealing resin 210. In this embodiment, a black epoxy resin is used as the material of the sealing resin 210.

As shown in FIG. 39, the sealing resin 210 has a resin top surface 215 and a resin back surface 216 facing opposite directions in the thickness direction z, and resin side surfaces 211 to 214 that are provided between the resin top surface 215 and the resin back surface 216 in the thickness direction z and extend in a direction intersecting the resin top surface 215 and the resin back surface 216. The resin side surface 211 and the resin side surface 212 are disposed apart from each other in the first direction x. The resin side surface 211 and the resin side surface 212 are surfaces facing opposite directions in the first direction x and extend along the second direction y. The resin side surface 213 and the resin side surface 214 are disposed apart from each other in the second direction y. The resin side surface 213 and the resin side surface 214 are surfaces facing opposite directions in the second direction y and extend along the first direction x.

44 and 45, grooves 217 and 218 recessed from the resin back surface 216 in the thickness direction z are formed in the portion of the sealing resin 210 on the resin back surface 216 side. The groove 217 is provided at the end of the sealing resin 210 on the resin side surface 211 side in the first direction x. Three grooves 217 are provided at intervals from each other in the first direction x. The groove 218 is provided at the end of the sealing resin 210 on the resin side surface 212 side in the first direction x. Three grooves 218 are provided at intervals from each other in the first direction x. The grooves 217 and 218 each extend along the second direction y. In one example, the grooves 217 and 218 are formed from the resin side surface 213 to the resin side surface 214 of the sealing resin 210. The number of grooves 217 and the number of grooves 218 can be changed arbitrarily. In addition, at least one of the grooves 217 and 218 may be omitted from the sealing resin 210.

39 and 40, the multiple leads 220 include two input leads 221, 222, an output lead 223, a pair of control leads 224A, 224B, a pair of detection leads 225A, 225B, multiple dummy leads 226, and a pair of side leads 227A, 227B. As shown in Figs. 39 and 44, the input leads 221, 222 each protrude from the resin side surface 211 of the sealing resin 210. As shown in Fig. 47, the side lead 227A is exposed from the resin side surface 211. As shown in Figs. 44 and 45, the output lead 223 protrudes from the resin side surface 212 of the sealing resin 210. As shown in Fig. 46, the side lead 227B is exposed from the resin side surface 212. As shown in Figures 39 and 41, a pair of control leads 224A, 224B, a pair of detection leads 225A, 225B, and a number of dummy leads 226 each protrude from the resin side surface 213 of the sealing resin 210.

The positions at which the pair of control leads 224A, 224B, the pair of detection leads 225A, 225B, and the multiple dummy leads 226 protrude from the resin side surface of the sealing resin 210 can be changed as desired. For example, a portion of the pair of control leads 224A, 224B, the pair of detection leads 225A, 225B, and the multiple dummy leads 226 may protrude from the resin side surface 213, and the remainder may protrude from the resin side surface 214.

As shown in FIG. 42, the multiple semiconductor elements 230 are sealed with sealing resin 210. Each semiconductor element 230 is made of a semiconductor material mainly made of SiC. Each semiconductor element 230 is made of a semiconductor material mainly made of SiC. The semiconductor material is not limited to SiC, and may be Si, GaAs, GaN, or the like. Each semiconductor element 230 in this embodiment is an n-channel MOSFET. Each semiconductor element 230 is not limited to a MOSFET, and may be a field effect transistor including a MISFET, a bipolar transistor such as an IGBT, or an IC chip such as an LSI.

In this embodiment, the multiple semiconductor elements 230 can be divided into four first semiconductor elements 230U that form the upper arm of the switching circuit and four second semiconductor elements 230L that form the lower arm of the switching circuit. The four first semiconductor elements 230U are connected in parallel to each other, and the four second semiconductor elements 230L are connected in parallel to each other. The four first semiconductor elements 230U and the four second semiconductor elements 230L are connected in series to each other. The number of semiconductor elements 230 (the number of first semiconductor elements 230U and second semiconductor elements 230L) can be changed as desired depending on the performance required of the semiconductor device 1D.

The detailed configuration of the multiple semiconductor elements 230 will be described below. Note that since the multiple semiconductor elements 230 have the same configuration, the configuration of a specific semiconductor element 230 will be described, and for the remaining semiconductor elements 230, the same components will be given the same reference numerals and their description will be omitted.

As shown in FIG. 40, the semiconductor element 230 is formed in a flat plate shape. As shown in FIG. 43, the shape of the semiconductor element 230 in a planar view is a square. The shape of the semiconductor element 230 in a planar view can be changed as desired. For example, the shape of the semiconductor element 230 in a planar view may be a rectangle whose long side direction is one of the first direction x and the second direction y, and whose short side direction is the other of the first direction x and the second direction y.

As shown in FIG. 49, the semiconductor element 230 has an element main surface 231 and an element back surface 232 that face opposite each other in the thickness direction z. As shown in FIGS. 43 and 49, a source electrode 233, which is an example of a drive electrode, and a gate electrode 234, which is an example of a control electrode, are provided on the element main surface 231, and a drain electrode 235 is provided on the element back surface 232. A gate voltage for driving the semiconductor element 230 is applied to the gate electrode 234. When the gate voltage applied to the gate electrode 234 becomes equal to or greater than a threshold value, a drain current flows through the drain electrode 235 and a source current flows through the source electrode 233 of the semiconductor element 230.

As shown in FIG. 43, the source electrode 233 is formed over most of the element's main surface 231. The gate electrode 234 is disposed in a recess 233a formed in the source electrode 233. As shown in FIG. 49, the drain electrode 235 is formed over the entire element's back surface 232.

43, an insulating film 236 is provided on the element main surface 231. The insulating film 236 has electrical insulation properties. In a plan view, the insulating film 236 surrounds the source electrode 233 and the gate electrode 234. The insulating film 236 is formed by laminating, for example, a SiO ₂ (silicon dioxide) layer, a SiN ₄ (silicon nitride) layer, and a polybenzoxazole layer in this order from the element main surface 231. Note that the insulating film 236 may be a polyimide layer instead of the polybenzoxazole layer.

42, each semiconductor element 230 is electrically connected to a pair of input leads 221, 222, an output lead 223, a pair of control leads 224A, 224B, and a pair of detection leads 225A, 225B. In this embodiment, each semiconductor element 230 is not electrically connected to a plurality of dummy leads 226. The input lead 221 is electrically connected to the drain electrode 235 (see FIG. 51) of each first semiconductor element 230U, and the input lead 222 is electrically connected to the source electrode 233 (see FIG. 49) of each second semiconductor element 230L. The output lead 223 is electrically connected to the source electrode 233 (see FIG. 51) of each first semiconductor element 230U and the drain electrode 235 (see FIG. 49) of each second semiconductor element 230L. As shown in FIG. 43, the control lead 224A is electrically connected to the gate electrode 234 of each first semiconductor element 230U, and the control lead 224B is electrically connected to the gate electrode 234 of each second semiconductor element 230L. The detection lead 225A is electrically connected to the source electrode 233 of each first semiconductor element 230U, and the detection lead 225B is electrically connected to the source electrode 233 of each second semiconductor element 230L. The arrangement of each semiconductor element 230 and the lead 220, and the detailed configuration of each lead 220 will be described below.

As shown in FIG. 42, the pair of input leads 221, 222, the output lead 223, and the pair of side leads 227A, 227B are each mounted on the support substrate 240. The pair of control leads 224A, 224B, the pair of detection leads 225A, 225B, and the multiple dummy leads 226 are not mounted on the support substrate 240. The pair of control leads 224A, 224B, the pair of detection leads 225A, 225B, and the multiple dummy leads 226 are located next to the support substrate 240 in the second direction y.

The support substrate 240 includes an insulating substrate 241, a pair of conductive members 242A, 242B, a pair of insulating layers 243A, 243B, a pair of control layers 244A, 244B, and a pair of detection layers 245A, 245B. The support substrate 240 is configured by stacking the insulating substrate 241, the pair of conductive members 242A, 242B, and the pair of insulating layers 243A, 243B in this order. The control layer 244A and the detection layer 245A are stacked on the insulating layer 243A, and the control layer 244B and the detection layer 245B are stacked on the insulating layer 243B.

The insulating substrate 241 has electrical insulation. The insulating substrate 241 is, for example, a ceramic with excellent thermal conductivity. Examples of such ceramics include AlN, SiN (silicon nitride), and Al ₂ O ₃ (aluminum oxide). In this embodiment, the shape of the insulating substrate 241 in a plan view is a rectangle with the second direction y being the long side direction and the first direction x being the short side direction. As shown in FIG. 48, the insulating substrate 241 has a substrate main surface 241a and a substrate back surface 241b facing opposite sides to each other in the thickness direction z. A pair of conductive members 242A and 242B are arranged on the substrate main surface 241a. The substrate main surface 241a is sealed by the sealing resin 210 together with the pair of conductive members 242A and 242B, the pair of insulating layers 243A and 243B, the pair of control layers 244A and 244B, and the pair of detection layers 245A and 245B. As shown in FIG. 45, the substrate back surface 241b is exposed from the sealing resin 210. For example, a heat sink (not shown) is connected to the substrate back surface 241b. The substrate back surface 241b is disposed between the grooves 217 and 218 of the sealing resin 210 in the first direction x. According to this configuration, the groove 217 lengthens the creeping distance between the input leads 221 and 222 and the substrate back surface 241b, and the groove 218 lengthens the creeping distance between the output lead 223 and the substrate back surface 241b. Therefore, the dielectric strength of the semiconductor device 1D is improved. Note that the configuration of the insulating substrate 241 is not limited to the above-mentioned configuration and can be changed as desired. In one example, the insulating substrate 241 is divided into two pieces according to the conductive members 242A and 242B.

Each of the pair of conductive members 242A, 242B is a metal plate. The material of the metal plate is Cu or a Cu alloy. The pair of conductive members 242A, 242B, together with the plurality of leads 220, constitute a conductive path with the plurality of semiconductor elements 230. The pair of conductive members 242A, 242B are arranged on the substrate main surface 241a of the insulating substrate 241 at a distance in the second direction y. The pair of conductive members 242A, 242B are joined to the substrate main surface 241a by a bonding material such as Ag paste or solder. The bonding material may be a conductive material such as Ag paste or solder, or may be an insulating material. In this embodiment, the thickness of the pair of conductive members 242A, 242B (the dimension of the conductive members 242A, 242B in the thickness direction z) is thicker than the thickness of the insulating substrate 241 (the dimension of the insulating substrate 241 in the thickness direction z). The thickness of the pair of conductive members 242A, 242B is thicker than the thickness of each of the input leads 221, 222 and the output lead 223 (the dimension of each of the input leads 221, 222 and the output lead 223 in the thickness direction z). The thickness of the pair of conductive members 242A, 242B is, for example, 0.4 mm or more and 3.0 mm or less. The surfaces of the pair of conductive members 242A, 242B may be covered with silver plating. In this embodiment, the pair of conductive members 242A, 242B have the same shape. The shape of each of the pair of conductive members 242A, 242B in a plan view is a rectangle whose long side is in the second direction y and whose short side is in the first direction x.

42 and 48, the conductive member 242A is disposed closer to the resin side surface 211 of the sealing resin 210 than the conductive member 242B in the first direction x. The conductive member 242A is electrically connected to the four first semiconductor elements 230U, the input lead 221, and the lateral lead 227A. The conductive member 242A has a main surface 242sa and a back surface 242ra that face opposite each other in the thickness direction z. The main surface 242sa faces in the same direction as the substrate main surface 241a of the insulating substrate 241 in the thickness direction z. The main surface 242sa also faces in the same direction as the element main surfaces 231 of the four first semiconductor elements 230U in the thickness direction z. The four first semiconductor elements 230U and the input lead 221 are disposed on the main surface 242sa. The back surface 242ra faces the same direction as the back surface 241b of the insulating substrate 241 in the thickness direction z. The back surface 242ra faces the same direction as the element back surface 232 of the first semiconductor element 230U in the thickness direction z. The back surface 242ra is connected to the substrate main surface 241a of the insulating substrate 241 via a bonding material. The four first semiconductor elements 230U are aligned with each other in the first direction x and spaced apart from each other in the second direction y. The four first semiconductor elements 230U are each disposed in a portion of the conductive member 242A on the conductive member 242B side in the first direction x. The input lead 221 is disposed at an end of the conductive member 242A on the resin side surface 211 side of the sealing resin 210 in the first direction x, and at the center of the conductive member 242A in the second direction y. The lateral lead 227A is disposed at the end of the conductive member 242A on the resin side surface 211 side in the first direction x, and at the end on the resin side surface 213 side of the sealing resin 210 in the second direction y.

The conductive member 242B is disposed closer to the resin side surface 212 of the sealing resin 210 than the conductive member 242A in the first direction x. The conductive member 242B is electrically connected to the four second semiconductor elements 230L, the output lead 223, and the lateral lead 227B. The conductive member 242B has a main surface 242sb and a back surface 242rb that face opposite each other in the thickness direction z. The main surface 242sb faces in the same direction as the substrate main surface 241a of the insulating substrate 241 in the thickness direction z. The main surface 242sb also faces in the same direction as the element main surface 231 of the semiconductor element 230. The main surface 242sb is an example of a drive connection surface. The back surface 242rb faces in the same direction as the substrate back surface 241b of the insulating substrate 241 in the thickness direction z. Four second semiconductor elements 230L and output leads 223 are arranged on the main surface 242sb. The back surface 242rb is connected to the substrate main surface 241a of the insulating substrate 241 via a bonding material. The four second semiconductor elements 230L are arranged in a state where they are aligned with each other in the first direction x and spaced apart in the second direction y. The four second semiconductor elements 230L are arranged in a portion of the conductive member 242B on the conductive member 242A side in the first direction x. When viewed from the first direction x, the four second semiconductor elements 230L are arranged so as not to overlap with the four first semiconductor elements 230U. As shown in FIG. 42, the four second semiconductor elements 230L and the four first semiconductor elements 230U are arranged alternately in the second direction y. The output lead 223 is disposed at the end of the conductive member 242B on the resin side surface 212 side of the sealing resin 210 in the first direction x, and at the center of the conductive member 242B in the second direction y. The side lead 227B is disposed at the end of the conductive member 242B on the resin side surface 212 side in the first direction x, and at the end on the resin side surface 213 side of the sealing resin 210 in the second direction y.

The pair of insulating layers 243A, 243B have electrical insulation properties. The material of the pair of insulating layers 243A, 243B is, for example, glass epoxy resin. The pair of insulating layers 243A, 243B are arranged spaced apart in the first direction x. In a plan view, the shape of the pair of insulating layers 243A, 243B is a strip extending in the second direction y.

The insulating layer 243A is bonded to the main surface 242sa of the conductive member 242A. The insulating layer 243A is arranged so as to overlap the four first semiconductor elements 230U, the input lead 221, and the lateral lead 227A when viewed from the first direction x. The insulating layer 243A is arranged closer to the resin side surface 211 of the sealing resin 210 than the four first semiconductor elements 230U in the first direction x. More specifically, the insulating layer 243A is arranged closer to the resin side surface 211 than the four first semiconductor elements 230U in the first direction x and adjacent to each of the first semiconductor elements 230U. The insulating layer 243A is also arranged closer to the four first semiconductor elements 230U than the input lead 221 in the first direction x.

The insulating layer 243B is bonded to the main surface 242sb of the conductive member 242B. The insulating layer 243B is arranged so as to overlap the four second semiconductor elements 230L, the output lead 223, and the side lead 227B when viewed from the first direction x. The insulating layer 243B is arranged closer to the resin side surface 212 of the sealing resin 210 than the four second semiconductor elements 230L in the first direction x. More specifically, the insulating layer 243B is arranged so as to be adjacent to each second semiconductor element 230L on the resin side surface 212 side than the four second semiconductor elements 230L in the first direction x. The insulating layer 243B is also arranged closer to the four second semiconductor elements 230L than the output lead 223 in the first direction x.

The pair of control layers 244A, 244B are conductive. The material of the pair of control layers 244A, 244B is, for example, Cu. In a plan view, each of the pair of control layers 244A, 244B has a strip shape extending in the second direction y, for example.

The control layer 244A is disposed on the insulating layer 243A. The control layer 244A is disposed on the portion of the insulating layer 243A on the resin side surface 211 side in the first direction x. The control layer 244A is electrically connected to the gate electrode 234 (see FIG. 43) of each first semiconductor element 230U via a first control wire 251 described later. The control layer 244A is also electrically connected to the control lead 224A via a first connection wire 253 described later.

The control layer 244B is disposed on the insulating layer 243B. The control layer 244B is disposed on the portion of the insulating layer 243B on the resin side surface 212 side in the first direction x. The control layer 244B is electrically connected to the gate electrode 234 of each second semiconductor element 230L via a second control wire 252 described later. The control layer 244B is also electrically connected to the control lead 224B via a second connection wire 257 described later.

The pair of detection layers 245A, 245B are conductive. The material of the pair of detection layers 245A, 245B is, for example, Cu. In plan view, the shape of the pair of detection layers 245A, 245B is, for example, a strip extending in the second direction y. In this embodiment, the width dimension of the pair of detection layers 245A, 245B (the dimension of the pair of detection layers 245A, 245B in the first direction x) is equal to the width dimension of the pair of control layers 244A, 244B (the dimension of the pair of control layers 244A, 244B in the first direction x), and the length of the pair of detection layers 245A, 245B in the second direction y is equal to the length of the pair of control layers 244A, 244B in the second direction y.

The detection layer 245A is disposed on the insulating layer 243A together with the control layer 244A. The detection layer 245A is disposed so as to be spaced apart from the control layer 244A in the first direction x and adjacent to the control layer 244A. In this embodiment, the detection layer 245A is disposed so as to be closer to the four first semiconductor elements 230U than the control layer 244A in the first direction x. The positional relationship between the detection layer 245A and the control layer 244A in the first direction x can be changed arbitrarily. For example, the detection layer 245A may be closer to the resin side surface 211 than the control layer 244A in the first direction x. The detection layer 245A is electrically connected to the source electrode 233 of each first semiconductor element 230U via a first detection wire 255 described later. The detection layer 245A is also electrically connected to the detection lead 225A via a first connection wire 254 described later.

The detection layer 245B is disposed on the insulating layer 243B together with the control layer 244B. The detection layer 245B is disposed so as to be spaced apart from the control layer 244B in the first direction x and adjacent to the control layer 244B. In this embodiment, the detection layer 245B is disposed so as to be closer to the four second semiconductor elements 230L than the control layer 244B in the first direction x. The positional relationship between the detection layer 245B and the control layer 244B in the first direction x can be changed arbitrarily. For example, the detection layer 245B may be closer to the resin side surface 212 than the control layer 244B in the first direction x. The detection layer 245B is electrically connected to the source electrode 233 of each second semiconductor element 230L via a second detection wire 256 described later. The detection layer 245B is also electrically connected to the detection lead 225B via a second connection wire 258 described later.

As shown in FIG. 47 and FIG. 48, each of the input leads 221 and 222 is made of a metal plate. The metal plate is made of, for example, Cu or a Cu alloy. For example, a power supply voltage is applied to each of the input leads 221 and 222. In this embodiment, a first power supply voltage is applied to the input lead 221, and a second power supply voltage lower than the first power supply voltage is applied to the input lead 222. In this manner, the input lead 221 is a positive electrode (P terminal), and the input lead 222 is a negative electrode (N terminal). In this embodiment, the thickness of the input leads 221 and 222 (the dimension of the input leads 221 and 222 in the thickness direction z) is 0.8 mm, but is not limited to this. The input leads 221 and 222 are arranged so as to overlap each other when viewed from the thickness direction z while being spaced apart from each other in the thickness direction z.

As shown in FIG. 42, the input lead 221 indicated by the dashed line is formed in a flat plate shape extending in the first direction x. The input lead 221 has a pad portion 221a and a terminal portion 221b. In this embodiment, the input lead 221 is configured as a single component in which the pad portion 221a and the terminal portion 221b are integrally formed.

The pad portion 221a is a portion of the input lead 221 that is covered by the sealing resin 210. A plurality of comb teeth 221c are provided at the end of the pad portion 221a on the resin side surface 212 side of the sealing resin 210. Each comb tooth 221c is conductively joined to the main surface 242sa of the conductive member 242A. The joining method may be laser welding using laser light, ultrasonic joining, or joining using a conductive joining material. In this embodiment, each comb tooth 221c is disposed at the end of the main surface 242sa of the conductive member 242A on the resin side surface 211 side of the sealing resin 210, and in the center in the second direction y. A plurality of through holes (not shown) that penetrate the pad portion 221a in the thickness direction z are provided in the portion of the pad portion 221a on the resin side surface 211 side. A portion of the sealing resin 210 enters each through hole. This makes it difficult for the sealing resin 210 and the input lead 221 to be separated.

The input lead 222 has a pad portion 222a and a terminal portion 222b. In this embodiment, the input lead 222 is configured as a single component in which the pad portion 222a and the terminal portion 222b are integrally formed.

The pad portion 222a is a portion of the input lead 222 that is covered by the sealing resin 210. The pad portion 222a can be divided into a plurality of extension portions 222c (four in this embodiment), a connecting portion 222d that connects the plurality of extension portions 222c, and an intermediate portion 222e that is the portion between the connecting portion 222d and the terminal portion 222b. The plurality of extension portions 222c and the connecting portion 222d are arranged so as to be closer to the resin side surface 214 of the sealing resin 210 in the second direction y.

42 and 48, the multiple extensions 222c are provided according to the number of the second semiconductor elements 230L. The multiple extensions 222c are arranged at a distance from each other in the second direction y. The shape of the extensions 222c in a plan view is a strip extending toward the first direction x. Each extension 222c has a main surface 222cs that faces the same direction as the element main surface 231 of the semiconductor element 230 in the thickness direction z, and a back surface 222cr that faces the same direction as the element back surface 232 of the semiconductor element 230 in the thickness direction z. The main surface 222cs is an example of a drive connection surface. The tip of each extension 222c is supported by a support base 229. In this embodiment, the support base 229 is provided according to the number of extensions 222c. The multiple support bases 229 are arranged at the end of the conductive member 242A on the conductive member 242B side in the first direction x. The multiple support bases 229 are aligned in the first direction x and spaced apart from each other in the second direction y. Each support base 229 has, for example, electrical insulation. The material of each support base 229 is, for example, ceramics. Each support base 229 is bonded to the main surface 242sa of the conductive member 242A. The thickness of each support base 229 (the dimension of each support base 229 in the thickness direction z) is approximately equal to the total thickness of the input lead 221 (the dimension of the input lead 221 in the thickness direction z) and the thickness of the insulating member 228 (the dimension of the insulating member 228 in the thickness direction z) described later. The tip of the extension portion 222c is bonded to each support base 229. As a result, each support base 229 stabilizes the posture of the input lead 222.

In a plan view, the multiple extensions 222c are arranged to be aligned with the multiple second semiconductor elements 230L in the second direction y. In other words, when viewed from the first direction x, the multiple extensions 222c are arranged to overlap with the multiple second semiconductor elements 230L. Furthermore, the multiple extensions 222c are arranged closer to the resin side surface 211 of the sealing resin 210 than the multiple second semiconductor elements 230L. Therefore, the tip edges of the multiple extensions 222c are spaced apart from the second semiconductor elements 230L in the first direction x.

The connecting portion 222d is connected to the end of the plurality of extension portions 222c on the resin side surface 211 side in the first direction x. The shape of the connecting portion 222d in a plan view is a rectangle whose long side direction is the second direction y and whose short side direction is the first direction x. The middle portion 222e is continuous with the end of the connecting portion 222d on the resin side surface 211 side in the first direction x and with the center of the connecting portion 222d in the second direction y. The shape of the middle portion 222e in a plan view is a rectangle whose long side direction is the first direction x and whose short side direction is the second direction y. The middle portion 222e has a plurality of through holes 222f penetrating the middle portion 222e in the thickness direction z. A part of the sealing resin 210 enters each through hole 222f. This makes it difficult for the sealing resin 210 and the input lead 222 to be separated.

The terminal portion 222b is a portion of the input lead 222 that protrudes from the resin side surface 211. The shape of the terminal portion 222b in a plan view is a rectangle whose long side direction is the first direction x and whose short side direction is the second direction y. The size of the terminal portion 222b in a plan view is the same as the size of the terminal portion 221b of the input lead 221 in a plan view.

Between the input leads 221 and 222 in the thickness direction z, there is an insulating member 228 that electrically insulates the input leads 221 and 222. The input leads 221 and 222 are joined to the insulating member 228 by, for example, a bonding material. The bonding material may be a conductive bonding material or an insulating bonding material. The material constituting the insulating member 228 is, for example, insulating paper. The shape of the insulating member 228 in a plan view is a rectangle whose long side direction is the first direction x and whose short side direction is the second direction y. In the thickness direction z, the insulating member 228 overlaps with the pad portion 221a and the terminal portion 221b of the input lead 221. In the thickness direction z, the insulating member 228 overlaps with the connecting portion 222d, the intermediate portion 222e, and the terminal portion 222b of the input lead 222. In this way, a part of the insulating member 228 is covered with the sealing resin 210. The size of the insulating member 228 in the second direction y is larger than the size of the terminal portions 221b, 222b of the input leads 221, 222 in the second direction y. As shown in Figures 42 and 45, in a plan view, the insulating member 228 protrudes from both sides of the terminal portions 221b, 222b in the second direction y. Also, the insulating member 228 protrudes beyond the tips of the terminal portions 221b, 222b in the first direction x.

As shown in FIG. 42, the output lead 223 is a metal plate. The constituent material of the metal plate is, for example, Cu or a Cu alloy. The output lead 223 is disposed near the resin side surface 212 of the sealing resin 210. The AC power (voltage) converted by the multiple semiconductor elements 230 is output from the output lead 223.

The output lead 223 is formed in a flat plate shape extending in the first direction x. The output lead 223 has the same shape as the input lead 221. The output lead 223 has a pad portion 223a and a terminal portion 223b. In this embodiment, the output lead 223 is configured as a single component in which the pad portion 223a and the terminal portion 223b are integrally formed.

The pad portion 223a is a portion of the output lead 223 that is covered by the sealing resin 210. A plurality of comb teeth 223c are provided at the end of the pad portion 223a on the resin side surface 211 side of the sealing resin 210. Each comb tooth 223c is conductively bonded to the main surface 242sb of the conductive member 242B. The bonding method may be laser welding using a laser beam, ultrasonic bonding, or bonding using a conductive bonding material. A plurality of through holes 223d that penetrate the pad portion 223a in the thickness direction z are provided at the portion of the pad portion 223a on the resin side surface 212 side of the sealing resin 210. A portion of the sealing resin 210 enters each through hole 223d. This makes it difficult for the sealing resin 210 and the output lead 223 to be separated.

The terminal portion 223b is a portion of the output lead 223 that protrudes from the resin side surface 212 of the sealing resin 210. In a plan view, the shape of the terminal portion 223b is a rectangle whose long side direction is the first direction x and whose short side direction is the second direction y. The terminal portion 223b extends toward the opposite side to the terminal portion 223b of the input lead 221.

As shown in FIG. 43, in a plan view, the pair of control leads 224A, 224B, the pair of detection leads 225A, 225B, and the multiple dummy leads 226 are arranged along the first direction x. More specifically, in a plan view, the control lead 224A, the detection lead 225A, and the three dummy leads 226 are located next to the conductive member 242A in the second direction y. In a plan view, the control lead 224B, the detection lead 225B, and the three dummy leads 226 are located next to the conductive member 242B in the second direction y. In this embodiment, the pair of control leads 224A, 224B, the pair of detection leads 225A, 225B, and the multiple dummy leads 226 are made of the same lead frame.

In plan view, the control lead 224A is arranged to be closer to the first semiconductor element 230U than the control layer 244A and the detection layer 245A in the first direction x. The control lead 224A is arranged to overlap with the multiple first semiconductor elements 230U when viewed from the second direction y. A gate voltage for driving the multiple first semiconductor elements 230U is applied to the control lead 224A. The control lead 224B is arranged to be closer to the second semiconductor element 230L than the control layer 244B and the detection layer 245B in the first direction x. The control lead 224B is arranged to overlap with the multiple second semiconductor elements 230L when viewed from the second direction y. A gate voltage for driving the multiple second semiconductor elements 230L is applied to the control lead 224B.

The pair of control leads 224A, 224B each have a pad portion 224a and a terminal portion 224b. The shape of the pair of control leads 224A, 224B is the same as that of the other. In this embodiment, the pair of control leads 224A, 224B each are configured as a single component in which the pad portion 224a and the terminal portion 224b are integrally formed.

The pad portion 224a is a portion of the pair of control leads 224A, 224B that is covered with the sealing resin 210. As a result, the pair of control leads 224A, 224B are each supported by the sealing resin 210. The surface of the pad portion 224a may be, for example, silver plated. The pad portion 224a is provided with a through hole 224c. The through hole 224c penetrates the pad portion 224a in the thickness direction z. A part of the sealing resin 210 enters the through hole 224c. As a result, the sealing resin 210 and the pair of control leads 224A, 224B are difficult to separate from each other. The terminal portion 224b is a portion of the pair of control leads 224A, 224B that protrudes from the sealing resin 210. The terminal portion 224b is L-shaped when viewed from the first direction x (see Figures 39 and 40).

The control lead 224A and the control layer 244A are connected by a first connection wire 253. More specifically, the end of the first connection wire 253 that is connected to the control layer 244A is connected to the end of the control layer 244A on the control lead 224A side in the second direction y. The end of the first connection wire 253 that is connected to the control lead 224A is connected to the pad portion 224a of the control lead 224A.

The control lead 224B and the control layer 244B are connected by a second connection wire 257. More specifically, the end of the second connection wire 257 that is connected to the control layer 244B is connected to the end of the control layer 244B on the control lead 224B side in the second direction y. The end of the second connection wire 257 that is connected to the control lead 224B is connected to the pad portion 224a of the control lead 224B.

The detection lead 225A is located next to the control lead 224A in the first direction x. In a plan view, the detection lead 225A is arranged so as to overlap the part of the first semiconductor element 230U on the insulating layer 243A side in the first direction x from the detection layer 245A in the first direction x and the part of the first semiconductor element 230U on the insulating layer 243A side in the first direction x from the second direction y. A voltage (a voltage corresponding to a source current) applied to the source electrodes 233 of the multiple first semiconductor elements 230U is detected via the detection lead 225A. The detection lead 225B is located next to the control lead 224B in the first direction x. The detection lead 225B is arranged so as to overlap the part of the second semiconductor element 230L on the insulating layer 243B side in the first direction x from the detection layer 245B in the first direction x and the part of the second semiconductor element 230L on the insulating layer 243B side in the first direction x from the second direction y. The voltage (voltage corresponding to the source current) applied to the source electrodes 233 of the second semiconductor elements 230L is detected via the detection lead 225B.

The pair of detection leads 225A, 225B each have a pad portion 225a and a terminal portion 225b. The shape of the pair of detection leads 225A, 225B is the same as that of the pair of control leads 224A, 224B. In this embodiment, the pair of detection leads 225A, 225B each are configured as a single component in which the pad portion 225a and the terminal portion 225b are integrally formed.

The pad portion 225a is a portion of the pair of detection leads 225A, 225B that is covered with the sealing resin 210. As a result, the pair of detection leads 225A, 225B are each supported by the sealing resin 210. The surface of the pad portion 225a may be, for example, silver plated. The pad portion 225a is provided with a through hole 225c. The through hole 225c penetrates the pad portion 225a in the thickness direction z. A part of the sealing resin 210 enters the through hole 225c. As a result, the sealing resin 210 and the pair of detection leads 225A, 225B are difficult to separate from each other. The terminal portion 225b is a portion of the pair of detection leads 225A, 225B that protrudes from the sealing resin 210. Like the terminal portion 225b, it is L-shaped when viewed from the first direction x (see Figures 39 and 40).

The detection lead 225A and the detection layer 245A are connected by a first connection wire 254. More specifically, the end of the first connection wire 254 that is connected to the detection layer 245A is connected to the end of the detection layer 245A on the detection lead 225A side in the second direction y. The end of the first connection wire 254 that is connected to the detection lead 225A is connected to the pad portion 225a of the detection lead 225A.

The detection lead 225B and the detection layer 245B are connected by a second connection wire 258. More specifically, the end of the second connection wire 258 that is connected to the detection layer 245B is connected to the end of the detection layer 245B on the detection lead 225B side in the second direction y. The end of the second connection wire 258 that is connected to the detection lead 225B is connected to the pad portion 225a of the detection lead 225B.

As shown in FIG. 43, the three dummy leads 226 are located adjacent to the control lead 224A on the opposite side to the detection lead 225A in the first direction x. The three dummy leads 226 are arranged spaced apart from each other in the first direction x. Of the three dummy leads 226, the two dummy leads 226 on the control lead 224A side are arranged so as to overlap the insulating layer 243A when viewed from the second direction y. The remaining dummy lead 226 is arranged so as to be closer to the resin side surface 211 (see FIG. 42) of the sealing resin 210 than the insulating layer 243A in the first direction.

The other three dummy leads 226 are located adjacent to the control lead 224B on the opposite side to the detection lead 225B in the first direction x. The other three dummy leads 226 are arranged spaced apart from each other in the first direction x. Of the other three dummy leads 226, the two dummy leads 226 on the control lead 224B side are arranged so as to overlap the insulating layer 243B when viewed from the second direction y. The remaining dummy lead 226 is arranged so as to be closer to the resin side surface 212 (see Figure 42) of the sealing resin 210 than the insulating layer 243B in the first direction x.

Each of the multiple dummy leads 226 has a pad portion 226a and a terminal portion 226b. The shapes of the multiple dummy leads 226 are the same as each other and are the same as the shapes of the pair of control leads 224A, 224B. In this embodiment, each of the multiple dummy leads 226 is configured as a single member in which the pad portion 226a and the terminal portion 226b are integrally formed.

The pad portion 226a is a portion of the multiple dummy leads 226 that is covered with the sealing resin 210. As a result, the multiple dummy leads 226 are supported by the sealing resin 210. The surface of the pad portion 226a may be, for example, silver plated. The pad portion 226a is provided with a through hole 226c. The through hole 226c penetrates the pad portion 226a in the thickness direction z. A part of the sealing resin 210 enters the through hole 226c. As a result, the sealing resin 210 and the multiple dummy leads 226 are difficult to separate. The terminal portion 226b is a portion of the multiple dummy leads 226 that protrudes from the sealing resin 210. The terminal portion 226b is L-shaped when viewed from the first direction x, similar to the terminal portion 224b (see Figures 39 and 40). In this embodiment, the six dummy leads 226 are not connected to the conductive members 242A and 242B, the control layers 244A and 244B, and the detection layers 245A and 245B by connecting members such as wires. At least one of the six dummy leads 226 may be omitted.

As shown in Figures 40 and 42, the semiconductor device 1D includes a plurality of first driving connection members 260 that connect the plurality of first semiconductor elements 230U and the conductive member 242B, and a plurality of second driving connection members 270 that connect the plurality of second semiconductor elements 230L and the input lead 222. Therefore, the conductive member 242B and the input lead 222 are an example of a driving conductor.

The multiple first drive connection members 260 are provided according to the number of first semiconductor elements 230U. In this embodiment, since there are four first semiconductor elements 230U, the semiconductor device 1D has four first drive connection members 260. The multiple second drive connection members 270 are provided according to the number of second semiconductor elements 230L. In this embodiment, since there are four second semiconductor elements 230L, the semiconductor device 1D has four second drive connection members 270. The multiple first drive connection members 260 and the multiple second drive connection members 270 are each sealed with sealing resin 210.

As shown in FIG. 43, the first drive connection member 260 is joined to the source electrode 233 of the first semiconductor element 230U and the end of the main surface 242sb of the conductive member 242B on the conductive member 242A side in the first direction x.

The shape of the first drive connection member 260 in a plan view is a band extending in the first direction x. The configuration of the first drive connection member 260 is the same as that of the first drive connection member 40A of the first embodiment. That is, as shown in FIG. 49, the first drive connection member 260 is configured to include a sheet-shaped conductor portion 264 and a solder layer 265 covering the surface of the conductor portion 264, and has a first connection portion 261, a second connection portion 262, and a coupling portion 263.

The first connection portion 261 is a portion that is joined to the source electrode 233 of the first semiconductor element 230U. The conductor principal surface 264s of the conductor portion 264 that constitutes the first connection portion 261 is covered by the principal surface side solder layer 265s, the conductor rear surface 264r of the conductor portion 264 that constitutes the first connection portion 261 is covered by the rear surface side solder layer 265r, and the conductor side surface (not shown) of the conductor portion 264 that constitutes the first connection portion 261 is covered by the side surface side solder layer (not shown). In this embodiment, in a cross-sectional view of the first connection portion 261, the principal surface side solder layer 265s is in contact with the conductor principal surface 264s, and the rear surface side solder layer 265r is in contact with the conductor rear surface 264r. In addition, the side surface side solder layer is in contact with the conductor side surface of the conductor portion 264. That is, the connection surface 261a of the first connection portion 261 that contacts the source electrode 233 of the first semiconductor element 230U is made of the solder layer 265 (back side solder layer 265r). The end face of the first connection portion 261 is a surface where the end face 264a of the conductor portion 264 is not covered by the solder layer 265, that is, the end face 264a is exposed.

The second connection portion 262 is a portion joined to the main surface 242sb of the conductive member 242B. The conductor main surface 264s of the conductor portion 264 constituting the second connection portion 262 is covered by the main surface side solder layer 265s, the conductor back surface 264r of the conductor portion 264 constituting the second connection portion 262 is covered by the back surface side solder layer 265r, and the conductor side surface (not shown) of the conductor portion 264 constituting the second connection portion 262 is covered by the side surface side solder layer (not shown). In this embodiment, in a cross-sectional view of the second connection portion 262, the main surface side solder layer 265s is in contact with the conductor main surface 264s, and the back surface side solder layer 265r is in contact with the conductor back surface 264r. In addition, the side surface side solder layer is in contact with the conductor side surface of the conductor portion 264. In other words, the connection surface 262a in the second connection portion 262 that comes into contact with the main surface 222cs of the input lead extension portion 222c is made of a solder layer 265 (rear surface solder layer 265r).

The connecting portion 263 is a portion that connects the first connecting portion 261 and the second connecting portion 262. When viewed from the second direction y, the connecting portion 263 is formed in a mountain shape, similar to the connecting portion 43 of the first embodiment. The conductor main surface 264s of the conductor portion 264 that constitutes the connecting portion 263 is covered by the main surface side solder layer 265s, the conductor back surface 264r of the conductor portion 264 that constitutes the connecting portion 263 is covered by the back surface side solder layer 265r, and the conductor side surface (not shown) of the conductor portion 264 that constitutes the connecting portion 263 is covered by the side surface side solder layer (not shown). In this embodiment, in a cross-sectional view of the connecting portion 263, the main surface side solder layer 265s is in contact with the conductor main surface 264s, and the back surface side solder layer 265r is in contact with the conductor back surface 264r. In addition, the side surface side solder layer is in contact with the conductor side surface of the conductor portion 264.

In this embodiment, the first drive connection member 260 is configured as a single component in which the first connection portion 261, the second connection portion 262, and the coupling portion 263 are integrally formed. In this embodiment, the first connection portion 261 is provided with a recess 266 by bonding the first connection portion 261 to the source electrode 233 of the first semiconductor element 230U. The second connection portion 262 is provided with a recess 267 by bonding the second connection portion 262 to the main surface 242sb of the conductive member 242B. The second connection portion 262 is also provided with an extension portion 268. The recess 266 has the same configuration as the recess 46 in the first embodiment, the recess 267 has the same configuration as the recess 47 in the first embodiment, and the extension portion 268 has the same configuration as the extension portion 48 in the first embodiment. The end face of the extension 268 is the surface where the end face 264b of the conductor 264 is not covered by the solder layer 265, i.e., the end face 264b is exposed.

The method of joining the first drive connection member 260 to the source electrode 233 of the second semiconductor element 230L and the main surface 222cs of the extension 222c of the input lead 222 is the same as the method of joining the first drive connection member 40A to the source electrode 32 of the first semiconductor element 30A and the second mounting layer 14A in the first embodiment.

As shown in FIG. 43, the second driving connection member 270 is joined to the source electrode 233 of the second semiconductor element 230L and the extension portion 222c of the input lead 222.
The second drive connecting member 270 has a band-like shape extending in the first direction x in a plan view. The configuration of the second drive connecting member 270 is the same as that of the drive connecting member 40 of the first embodiment. That is, as shown in Fig. 51, the second drive connecting member 270 is configured to include a sheet-like conductor portion 274 and a solder layer 275 covering the surface of the conductor portion 274, and has a first connection portion 271, a second connection portion 272, and a coupling portion 273.

The first connection portion 271 is a portion that is joined to the source electrode 233 of the second semiconductor element 230L. The conductor principal surface 274s of the conductor portion 274 that constitutes the first connection portion 271 is covered by the principal surface side solder layer 275s, the conductor rear surface 274r of the conductor portion 274 that constitutes the first connection portion 271 is covered by the rear surface side solder layer 275r, and the conductor side surface (not shown) of the conductor portion 274 that constitutes the first connection portion 271 is covered by the side surface side solder layer (not shown). In this embodiment, in a cross-sectional view of the first connection portion 271, the principal surface side solder layer 275s is in contact with the conductor principal surface 274s, and the rear surface side solder layer 275r is in contact with the conductor rear surface 274r. In addition, the side surface side solder layer is in contact with the conductor side surface of the conductor portion 274. That is, the connection surface 271a of the first connection portion 271 that contacts the source electrode 233 of the second semiconductor element 230L is made of the solder layer 275 (rear surface solder layer 275r). The end face of the first connection portion 271 is a surface where the end face 274a of the conductor portion 274 is not covered by the solder layer 275, that is, the end face 274a is exposed.

The second connection portion 272 is a portion joined to the main surface 242sb of the conductive member 242B. The conductor main surface 274s of the conductor portion 274 constituting the second connection portion 272 is covered by the main surface side solder layer 275s, the conductor back surface 274r of the conductor portion 274 constituting the second connection portion 272 is covered by the back surface side solder layer 275r, and the conductor side surface (not shown) of the conductor portion 274 constituting the second connection portion 272 is covered by the side surface side solder layer (not shown). In this embodiment, in a cross-sectional view of the second connection portion 272, the main surface side solder layer 275s is in contact with the conductor main surface 274s, and the back surface side solder layer 275r is in contact with the conductor back surface 274r. In addition, the side surface side solder layer is in contact with the conductor side surface of the conductor portion 274. In other words, the connection surface 272a of the second connection portion 272 that contacts the main surface 242sb of the conductive member 242B is made of a solder layer 275 (rear surface solder layer 275r).

The connecting portion 273 is a portion that connects the first connecting portion 271 and the second connecting portion 272. When viewed from the second direction y, the connecting portion 273 is formed in a mountain shape, similar to the connecting portion 43 of the first embodiment. The conductor main surface 274s of the conductor portion 274 that constitutes the connecting portion 273 is covered by the main surface side solder layer 275s, the conductor back surface 274r of the conductor portion 274 that constitutes the connecting portion 273 is covered by the back surface side solder layer 275r, and the conductor side surface (not shown) of the conductor portion 274 that constitutes the connecting portion 273 is covered by the side surface side solder layer (not shown). In this embodiment, in a cross-sectional view of the connecting portion 273, the main surface side solder layer 275s is in contact with the conductor main surface 274s, and the back surface side solder layer 275r is in contact with the conductor back surface 274r. In addition, the side surface side solder layer is in contact with the conductor side surface of the conductor portion 274.

In this embodiment, the second drive connection member 270 is configured as a single component in which the first connection portion 271, the second connection portion 272, and the linking portion 273 are integrally formed. In this embodiment, the first connection portion 271 is provided with a recess 276 by bonding the first connection portion 271 to the source electrode 233 of the second semiconductor element 230L. The second connection portion 272 is provided with a recess 277 by bonding the second connection portion 272 to the input lead 222. The second connection portion 272 is also provided with an extension portion 278. The recess 276 has the same configuration as the recess 46 in the first embodiment, the recess 277 has the same configuration as the recess 47 in the first embodiment, and the extension portion 278 has the same configuration as the extension portion 48 in the first embodiment. The end face of the extension portion 278 is a surface where the end face 274b of the conductor portion 274 is not covered by the solder layer 275, that is, the end face 274b is exposed.

The method of joining the second drive connection member 270 to the source electrode 233 of the first semiconductor element 230U and the main surface 242sb of the conductive member 242A is the same as the method of joining the second drive connection member 40B to the source electrode 32 of the second semiconductor element 30B and the conductive layer 15A in the first embodiment.

According to the semiconductor device 1D of the present embodiment, in addition to the effects (1-1) to (1-12) of the semiconductor device 1A of the first embodiment, the following effects can be obtained.
(4-1) The input leads 221 and 222 overlap each other as viewed in the thickness direction z. With this configuration, the semiconductor device 1D can be made smaller in size in the second direction y than in a configuration in which the input leads 221 and 222 are spaced apart from each other in the second direction y as viewed in the thickness direction z.

(4-2) When viewed from the thickness direction z, the input lead 222 is arranged to straddle the detection layer 245A and the control layer 244A. With this configuration, the input lead 222 does not need to be arranged to bypass the detection layer 245A and the control layer 244A in the second direction y, so the semiconductor device 1D can be made smaller in size in the second direction y.

(4-3) The shape of the first drive connection member 260 and the shape of the second drive connection member 270 are different from each other. Here, if each drive connection member 260, 270 is formed as a clip, a mold for forming the first drive connection member 260 and a mold for forming the second drive connection member 270 are separately required, which increases costs. In this respect, in this embodiment, each drive connection member 260, 270 is formed by the sheet 840 of the bonding device 800, so that even if the shape of the first drive connection member 260 and the shape of the second drive connection member 270 are different from each other, it is possible to suppress an increase in costs.

(4-4) When viewed from the thickness direction z, the multiple extensions 222c of the input lead 222 are aligned with the multiple second semiconductor elements 230L in the second direction y and spaced apart from the multiple second semiconductor elements 230L in the first direction x. With this configuration, when viewed from the thickness direction z, the first drive connection member 260 can be formed to extend along the first direction x. Therefore, when viewed from the thickness direction z, it is easier to bond the second connection portion 262 of the first drive connection member 260 to the extensions 222c, compared to when the first drive connection member 260 is formed at an angle with respect to the first direction x.

(4-5) When viewed from the thickness direction z, the extension 222c of the input lead 222 is arranged so that its tip is adjacent to the second semiconductor element 230L in the first direction x. With this configuration, the length of the first drive connection member 260 can be shortened. Therefore, the inductance caused by the length of the first drive connection member 260 can be reduced.

(4-6) The control layers 244A, 244B each extend in the second direction y. In the second direction y, the ends of the control layers 244A, 244B on the resin side surface 213 side are located near the control leads 224A, 224B. With this configuration, the length of the first connection wire 253 and the length of the second connection wire 257 can each be shortened. Therefore, the inductance caused by the length of the first connection wire 253 and the inductance caused by the length of the second connection wire 257 can each be reduced.

(4-7) The detection layers 245A, 245B each extend in the second direction y. In the second direction y, the ends of the detection layers 245A, 245B on the resin side surface 213 side are located near the detection leads 225A, 225B. With this configuration, the length of the first connection wire 254 and the length of the second connection wire 258 can each be shortened. Therefore, the inductance caused by the length of the first connection wire 254 and the inductance caused by the length of the second connection wire 258 can each be reduced.

(4-8) When viewed from the thickness direction z, the multiple first semiconductor elements 230U and the multiple second semiconductor elements 230L are arranged alternately in the second direction y. With this configuration, when viewed from the second direction y, the first driving connection member 260 can be arranged to overlap the first semiconductor element 230U, and the second driving connection member 270 can be arranged to overlap the second semiconductor element 230L. Therefore, the semiconductor device 1D can be made smaller in size in the first direction x.

[Fifth embodiment]
A semiconductor device 1E according to a fifth embodiment will be described with reference to FIGS.
As shown in Figures 52 and 53, the semiconductor device 1E includes a plurality of first semiconductor elements 30A, a plurality of second semiconductor elements 30B, a conductive substrate 300, an insulating substrate 340, a first power terminal 351A, a second power terminal 351B (see Figure 55), an output terminal 352, a pair of control terminals 353A, 353B, a pair of detection terminals 354A, 354B, a plurality of dummy terminals 355, a plurality of connection members 356A to 356H, and a sealing resin 360. The semiconductor device 1E also includes a plurality of metal members 321, 322, a plurality of insertion members 323, 324, and a plurality of through electrodes 325A to 325D. Each of the semiconductor elements 30A, 30B is the same as each of the semiconductor elements 30A, 30B of the third embodiment.

In this embodiment, the semiconductor device 1E constitutes a half-bridge type switching circuit, with the multiple first semiconductor elements 30A constituting an upper arm circuit in the switching circuit, and the multiple second semiconductor elements 30B constituting a lower arm circuit in the switching circuit.

52 and 53, the sealing resin 360 seals the first semiconductor elements 30A, the second semiconductor elements 30B, the conductive substrate 300, a portion of the insulating substrate 340, a portion of the first power terminal 351A, a portion of the second power terminal 351B, a portion of the output terminal 352, a portion of the pair of control terminals 353A and 353B, a portion of the pair of detection terminals 354A and 354B, a portion of the dummy terminals 355, and the connection members 356A to 356H. The sealing resin 360 is made of an electrically insulating material. In this embodiment, the sealing resin 360 is made of black epoxy resin. As shown in FIG. 52, the sealing resin 360 in this embodiment is formed in a rectangular plate shape. In the following description, the long side direction of the sealing resin 360 is the second direction y and the short side direction is the first direction x when viewed from the thickness direction z.

As shown in FIG. 54 and FIG. 55, the sealing resin 360 has a resin top surface 365 and a resin back surface 366 that face opposite each other in the thickness direction z, and four resin side surfaces 361 to 364 that are provided between the resin top surface 365 and the resin back surface 366 in the thickness direction z and intersect with the resin top surface 365 and the resin back surface 366. In this embodiment, the resin side surface 361 and the resin side surface 362 are arranged at a distance from each other in the first direction x and face opposite each other in the first direction x. The resin side surface 363 and the resin side surface 364 are arranged at a distance from each other in the second direction y and face opposite each other in the second direction y. When viewed from the thickness direction z, the resin side surface 361 and the resin side surface 362 extend along the first direction x, and the resin side surface 363 and the resin side surface 364 extend along the second direction y.

As shown in Figures 52 and 55, a plurality of grooves 367 that open toward the resin back surface 366 are formed on the resin back surface 366 side of the sealing resin 360. In this embodiment, three grooves 367 are formed at the end of the sealing resin 360 on the resin side surface 361 side in the first direction x, and three grooves 367 are formed at the end on the resin side surface 362 side. Each groove 367 extends along the second direction y. In this embodiment, each groove 367 is formed from the resin side surface 363 to the resin side surface 364 in the second direction y.

As shown in Figures 53 and 54, the insulating substrate 340 is a single substrate that supports the metal members 321, the metal members 322, the insertion members 323, the insertion members 324, the through electrodes 325A to 325D, and the conductive substrate 300. The material of the insulating substrate 340 is, for example, ceramics with excellent thermal conductivity. An example of such ceramics is AlN. In this embodiment, the shape of the insulating substrate 340 as viewed from the thickness direction z is a rectangle whose long side direction is the second direction y and whose short side direction is the first direction x. Note that the configuration of the insulating substrate 340 is not limited to the example shown in Figures 53 and 54, and the shape, size, number, etc. can be appropriately changed according to the product specifications of the semiconductor device 1E.

As shown in FIG. 55, the insulating substrate 340 is disposed between the three grooves 367 on the resin side surface 361 side and the three grooves 367 on the resin side surface 362 side in the first direction x. The insulating substrate 340 has a substrate main surface 340s and a substrate back surface 340r that face opposite each other in the thickness direction z. The substrate main surface 340s and the substrate back surface 340r are spaced apart in the thickness direction z. The substrate back surface 340r is exposed from the sealing resin 360. A cooler such as a heat sink (not shown) may be connected to the substrate back surface 340r.

The conductive substrate 300 is a laminated substrate in which a plurality of wiring layers and a plurality of insulating layers are alternately laminated in the thickness direction z. In this embodiment, the conductive substrate 300 has three wiring layers 301, 302, and 303, and two insulating layers 304 and 305. The number of wiring layers and the number of insulating layers are not limited to those described above, and can be changed as appropriate according to the product specifications of the semiconductor device 1E. The conductive substrate 300 is laminated in the order of the wiring layer 301, the insulating layer 304, the wiring layer 302, the insulating layer 305, and the wiring layer 303 in the direction from the substrate main surface 340s of the insulating substrate 340 toward the substrate back surface 340r in the thickness direction z. That is, the insulating layer 304 insulates the wiring layer 301 from the wiring layer 302, and the insulating layer 305 insulates the wiring layer 302 from the wiring layer 303. The wiring layer 303 is disposed on the substrate main surface 340s of the insulating substrate 340.

As shown in FIG. 54, the wiring layer 301 has a plurality of conductor portions 331A-331L and an insulating portion 331X. When viewed from the thickness direction z, the plurality of conductor portions 331A-331L are spaced apart from one another and are insulated from one another by the insulating portion 331X. Note that the insulating portion 331X may be omitted from the wiring layer 301. However, in order to prevent unintended short circuits of the plurality of conductor portions 331A-331L, it is preferable to provide the insulating portion 331X.

As shown in FIG. 55, the wiring layer 302 has a plurality of conductor portions 332 and insulating portions 332X. The plurality of conductor portions 332 are spaced apart from one another and are insulated from one another by the insulating portions 332X. The insulating portions 332X may be omitted from the wiring layer 302. However, in order to prevent unintended short circuits of the plurality of conductor portions 332, it is preferable to provide the insulating portions 332X.

The wiring layer 303 has a plurality of conductor portions 333 and insulating portions 333X. The plurality of conductor portions 333 are spaced apart from one another and are insulated from one another by the insulating portions 333X. The insulating portions 333X may be omitted from the wiring layer 303. However, in order to prevent unintended short circuits of the plurality of conductor portions 333, it is preferable to provide the insulating portions 333X.

As shown in Figures 53 to 55, each of the multiple conductor parts 331A to 331L, 332, and 333 is a plate-like member (thick copper plate) made of a metal containing Cu, for example. Each of the insulating parts 331X, 332X, and 333X is made of prepreg, for example. The dimension in the thickness direction z of each of the multiple conductor parts 331A to 331L, the dimension in the thickness direction z of each of the multiple conductor parts 332, and the dimension in the thickness direction z of each of the multiple conductor parts 333 are equal to each other. The dimension in the thickness direction z of each of the multiple conductor parts 331A to 331L, the dimension in the thickness direction z of each of the multiple conductor parts 332, and the dimension in the thickness direction z of each of the multiple conductor parts 333 are greater than, for example, 125 μm (the thickness of a wiring pattern in a typical printed circuit board (Cu thickness)). Preferably, the dimensions in the thickness direction z of each of the conductors 331A to 331L, the dimensions in the thickness direction z of each of the conductors 332, and the dimensions in the thickness direction z of each of the conductors 333 are larger than the dimensions in the thickness direction z of each of the semiconductor elements 30A and 30B, and are larger than the dimensions in the thickness direction z of each of the insulating layers 304 and 305. In other words, the dimensions in the thickness direction z of each of the wiring layers 301, 302, and 303 are larger than the dimensions in the thickness direction z of each of the semiconductor elements 30A and 30B, and are larger than the dimensions in the thickness direction z of each of the insulating layers 304 and 305. Note that the dimensions in the thickness direction z of each of the conductors 331A to 331L, the dimensions in the thickness direction z of each of the conductors 332, and the dimensions in the thickness direction z of each of the conductors 333 may be smaller than the dimensions in the thickness direction z of each of the insulating layers 304 and 305.

The configuration of the conductive substrate 300 is not limited to the examples shown in Figures 53 to 55, and the shape, size, arrangement, etc. of the multiple conductor portions 331A to 331L, 332, and 333 can be changed as appropriate depending on the specifications of the semiconductor device 1E.

As shown in FIG. 54, the conductive substrate 300 has a first input lead 381, a second input lead 382 (see FIG. 55), and an output lead 383. The first input lead 381 and the output lead 383 are provided in the wiring layer 301. That is, one of the multiple conductor parts 331A to 331L constitutes the first input lead 381, and another constitutes the output lead 383. More specifically, the conductor part 331A constitutes the first input lead 381, and the conductor part 331B constitutes the output lead 383. The part of the conductor part 331A protruding from the resin side surface 362 of the sealing resin 360 constitutes the first power terminal 351A, and the part of the conductor part 331B protruding from the resin side surface 361 of the sealing resin 360 constitutes the output terminal 352. As shown in FIG. 55, the conductor portion 331A (first input lead 381) and the conductor portion 332 constituting the second input lead 382 overlap each other when viewed in the thickness direction z.

The second input lead 382 is provided on the wiring layer 302. That is, one of the multiple conductor portions 332 of the wiring layer 302 constitutes the second input lead 382. The portion of the conductor portion 332 constituting the second input lead 382 that protrudes from the resin side surface 362 of the sealing resin 360 constitutes the second power terminal 351B.

In the thickness direction z, an insulating layer 304 is interposed between the conductor portion 331A (first input lead 381) and the conductor portion 332 (second input lead 382). The surface of the conductor portion 331A on the side opposite to the insulating layer 304 of the surface of the portion constituting the first power terminal 351A in the thickness direction z, and the surface of the portion constituting the second power terminal 351B in the conductor portion 332 constituting the second input lead 382 on the side opposite to the insulating layer 304 are exposed to the outside of the semiconductor device 1E. On the other hand, the surface of the conductor portion 331A on the insulating layer 304 side of the surface of the conductor portion 332 on the side of the insulating layer 304 of the surface of the conductor portion 331A on the thickness direction z of the portion constituting the first power terminal 351A, and the surface of the conductor portion 332 on the insulating layer 304 side of the second input lead 382 are in contact with the insulating layer 304. That is, the first input lead 381 and the second input lead 382 are insulated by the insulating layer 304. Therefore, the first power terminal 351A and the second power terminal 351B are insulated by the insulating layer 304.

As shown in FIG. 54, the conductor portion 331A and the conductor portion 331B are arranged on opposite sides to each other in the first direction x. More specifically, the conductor portion 331A is arranged at the end of the conductive substrate 300 on the resin side surface 362 side of the sealing resin 360. The conductor portion 331B is arranged at the end of the conductive substrate 300 on the resin side surface 361 side. In the first direction x, the conductor portion 331C and the conductor portion 331D are arranged between the conductor portion 331A and the conductor portion 331B.

As shown in FIG. 54, in this embodiment, the shape of the conductor 331A as viewed from the thickness direction z is substantially T-shaped. As shown in FIG. 56, the conductor 331A has a base 331a extending in the second direction y and a protruding portion 331b extending from the base 331a toward the first direction x. The protruding portion 331b extends from the base 331a toward the resin side surface 362 in the first direction x. In this embodiment, the conductor 331A is configured as a single component in which the base 331a and the protruding portion 331b are integrally formed. The tip of the protruding portion 331b protrudes from the resin side surface 362 (see FIG. 54) of the sealing resin 360 in the first direction x. The portion (tip) of the protruding portion 331b protruding from the resin side surface 362 constitutes the first power terminal 351A (see FIG. 54).

A plurality of openings 331c (three in this embodiment) are formed in the base 331a. The plurality of openings 331c are provided at the end of the base 331a on the resin side surface 362 side (see FIG. 54) in the first direction x. The plurality of openings 331c are formed spaced apart from each other in the second direction y. Conductor portions 331E and 331F are arranged in each of the plurality of openings 331c. The conductor portions 331E and 331F in each opening 331c are arranged spaced apart in the second direction y. In this embodiment, the conductor portion 331E is arranged in each opening 331c so that it is closer to the resin side surface 364 (see FIG. 54) than the conductor portion 331F in the second direction y. The shape of the conductor portion 331E as viewed from the thickness direction z is a rectangle whose long side is in the second direction y and whose short side is in the first direction x. When viewed from the thickness direction z, the shape of the conductor portion 331F is rectangular, with the long side direction being the first direction x and the short side direction being the second direction y.

As shown in Figures 54 and 56, the conductor portion 331C is arranged adjacent to the base portion 331a of the conductor portion 331A in the first direction x. The conductor portion 331C extends in the second direction y. When viewed from the thickness direction z, the shape of the conductor portion 331C is rectangular with the second direction y being the long side direction and the first direction x being the short side direction.

As shown in FIG. 54, in this embodiment, the shape of the conductor portion 331B as viewed from the thickness direction z is approximately T-shaped. As shown in FIG. 57, the conductor portion 331B has a base portion 331d extending in the second direction y and a protrusion portion 331e extending from the base portion 331d in the first direction x. The protrusion portion 331e extends from the base portion 331d toward the resin side surface 361 in the first direction x. In this embodiment, the conductor portion 331B is configured as a single component in which the base portion 331d and the protrusion portion 331e are integrally formed. The base portion 331d is provided in the sealing resin 360. The tip portion of the protrusion portion 331e protrudes in the first direction x from the resin side surface 361 (see FIG. 54) of the sealing resin 360. The portion (tip) of the protrusion 331e that protrudes from the resin side surface 361 constitutes the second power terminal 351B (see FIG. 54).

A plurality of openings 331f (three in this embodiment) are formed in the base 331d. Each of the plurality of openings 331f is provided at an end of the base 331d on the resin side surface 361 side (see FIG. 54) in the first direction x. The plurality of openings 331f are formed spaced apart from one another in the second direction y. A conductor portion 331G and a conductor portion 331H are disposed in each of the plurality of openings 331f.

As shown in FIG. 57, the conductor portion 331D is arranged so as to be adjacent to the base portion 331d of the conductor portion 331B in the first direction x. As shown in FIG. 54, the conductor portion 331D is arranged between the conductor portion 331B and the conductor portion 331C in the first direction x. In other words, the conductor portion 331C is arranged between the conductor portion 331D and the conductor portion 331A. The conductor portion 331D extends in the second direction y. The shape of the conductor portion 331D seen from the thickness direction z is a rectangle whose long side direction is the second direction y and whose short side direction is the first direction x. In this embodiment, the length of the conductor portion 331D in the second direction y is longer than the length of the conductor portion 331C in the second direction y. The width dimension of the conductor portion 331D (the dimension of the conductor portion 331D in the first direction x) is equal to the width dimension of the conductor portion 331C (the dimension of the conductor portion 331C in the first direction x).

As shown in Figures 56 to 58, a plurality of through holes 310A to 310L are formed in the conductive substrate 300. Each of the through holes 310A to 310L penetrates the conductive substrate 300 in the thickness direction z. In other words, each of the through holes 310A to 310L penetrates the wiring layers 301 to 303 and the insulating layers 304 and 305 in the thickness direction z.

As shown in FIG. 56, the multiple (three in this embodiment) through holes 310A are provided in the conductive substrate 300 in a portion where the base 331a of the conductor portion 331A is formed. The multiple through holes 310A are aligned with each other in the first direction x and spaced apart from each other in the second direction y. The shape of each through hole 310A as viewed from the thickness direction z is, for example, approximately circular. Multiple recesses are formed on the inner surface of each through hole 310A. The number of recesses can be changed as desired.

A plurality of metal members 321 are inserted into each of the plurality of through holes 310A. Each of the plurality of metal members 321 is a columnar conductive member. In this embodiment, each metal member 321 has a substantially circular cross-sectional shape perpendicular to the thickness direction z. That is, each metal member 321 is cylindrical. When viewed from the thickness direction z, a plurality of recesses are formed on the periphery of each metal member 321. The number of recesses is not particularly limited. In addition, the cross section is not limited to a substantially circular shape, and may be a substantially elliptical shape or a substantially polygonal shape. The material of each metal member 321 is, for example, Cu or a Cu alloy. Each metal member 321 is in contact with the insulating substrate 340 (see FIG. 55).

In this embodiment, the diameter of the circular portion of each through hole 310A, excluding the recesses, is approximately the same as or larger than the diameter of each metal member 321. In this embodiment, each metal member 321 is inserted (fitted) into each through hole 310A by, for example, press fitting.

As shown in FIG. 56, when each metal member 321 is inserted into each through hole 310A, a plurality of non-contact spaces G1 are formed by a plurality of recesses formed on the inner surface of each through hole 310A and a plurality of recesses formed on the side surface of each metal member 321. Each non-contact space G1 is circular when viewed from the thickness direction z, and is a space that penetrates the conductive substrate 300 in the thickness direction z. Each non-contact space G1 is filled with, for example, solder. By providing the non-contact space G1 in this way and filling the non-contact space G1 with solder, the bonding strength between the conductive substrate 300 and each metal member 321 is increased, and the conduction between each metal member 321 and the wiring layers 301 to 303 is achieved. In addition, in terms of design, if the diameters of each metal member 321 and each through hole 310A are the same when viewed from the thickness direction z, no gaps are generated in the parts other than the above-mentioned recesses, but in reality, minute gaps may be formed due to manufacturing errors. In addition, even if the diameter of the through hole 310A is made larger than the diameter of the metal member 321 in order to facilitate the insertion of the metal member 321, a minute gap may be formed. This minute gap is the cause of a decrease in the bonding strength and poor conduction. However, by providing a non-contact space G1 and filling the non-contact space G1 with solder, the solder also flows into the gap when filling the non-contact space G1 with solder. As a result, the solder fills the gap, and the decrease in the bonding strength between each metal member 321 and the conductive board 300 and the poor conduction between each metal member 321 and the wiring layers 301 and 302 can be suppressed. Note that each metal member 321 and the wiring layer 303 are not electrically connected. That is, a non-contact space G1 is formed between each metal member 321 and the insulating portion 333X (see FIG. 55) of the wiring layer 303, and the metal member 321 is not in contact with the conductor portion 333.

As shown in FIG. 57, the multiple (three in this embodiment) through holes 310B are provided in the conductive substrate 300 in a portion where the base 331d of the conductor portion 331B is formed. The multiple through holes 310B are aligned with each other in the first direction x and spaced apart from each other in the second direction y. In the first direction x, the multiple through holes 310B are arranged at positions different from the multiple through holes 310A. The shape of each through hole 310B as viewed from the thickness direction z is, for example, approximately circular. Multiple recesses are formed on the inner surface of each through hole 310B. The number of recesses can be changed as desired.

A plurality of metal members 322 are inserted into each of the plurality of through holes 310B. Each of the plurality of metal members 322 is a columnar conductive member. In this embodiment, each of the metal members 322 has a substantially circular cross-sectional shape perpendicular to the thickness direction z. That is, each of the metal members 322 is cylindrical. When viewed from the thickness direction z, a plurality of recesses are formed on the periphery of each of the metal members 322. The number of recesses is not particularly limited. The cross section is not limited to a substantially circular shape, and may be a substantially elliptical shape or a substantially polygonal shape. The material of each of the metal members 322 is, for example, Cu or a Cu alloy. Each of the metal members 322 is in contact with the insulating substrate 340 (see FIG. 55).

In this embodiment, the diameter of the circular portion of each through hole 310B, excluding the recesses, is approximately the same as or larger than the diameter of each metal member 322. In this embodiment, each metal member 322 is inserted (fitted) into each through hole 310B by, for example, press fitting.

When each metal member 322 is inserted into each through hole 310B, multiple recesses formed on the inner surface of each through hole 310B and multiple recesses formed on the side surface of each metal member 322 form multiple non-contact spaces G2. When viewed from the thickness direction z, the non-contact spaces G2 are circular and are spaces that penetrate the conductive substrate 300 in the thickness direction z. Each non-contact space G2 is filled with, for example, solder. By providing the non-contact spaces G2 in this way and filling the non-contact spaces G2 with solder, the bonding strength between the conductive substrate 300 and each metal member 322 is increased, and electrical continuity is achieved between each metal member 322 and the wiring layers 301 to 303.

As shown in FIG. 56, the multiple (three in this embodiment) through holes 310C are provided in the portion of the conductive substrate 300 where the conductor portion 331C is formed. The multiple through holes 310C are aligned with each other in the first direction x and spaced apart from each other in the second direction y. Furthermore, each through hole 310C is aligned with each through hole 310B (see FIG. 54) in the second direction y and spaced apart from each through hole 310B in the first direction x. In other words, each through hole 310C is located at a different position from each through hole 310A in the second direction y.

The shape of each through hole 310C as viewed from the thickness direction z is, for example, approximately circular. A plurality of recesses are formed on the inner surface of each through hole 310C. The number of recesses can be changed as desired. The area of each through hole 310C as viewed from the thickness direction z is smaller than the area of each through hole 310A, 310B as viewed from the thickness direction z.

A plurality of insertion members 323 are inserted into each of the plurality of through holes 310C. Each of the plurality of insertion members 323 is a columnar conductive member. In this embodiment, each of the insertion members 323 has a substantially circular cross-sectional shape perpendicular to the thickness direction z. That is, each of the insertion members 323 is cylindrical. When viewed from the thickness direction z, a plurality of recesses are formed on the periphery of each of the insertion members 323. The number of recesses is not particularly limited. The cross section is not limited to a substantially circular shape, and may be a substantially elliptical shape or a substantially polygonal shape. The material of each of the insertion members 323 is, for example, Cu or a Cu alloy. Each of the insertion members 323 is in contact with the insulating substrate 340 (see FIG. 55).

In this embodiment, the diameter of the circular portion of each through hole 310C, excluding the recesses, is approximately the same as or larger than the diameter of each insertion member 323. In this embodiment, each insertion member 323 is inserted (fitted) into each through hole 310C by, for example, press fitting.

When each insertion member 323 is inserted into each through hole 310C, multiple recesses formed on the inner surface of each through hole 310C and multiple recesses formed on the side surface of each insertion member 323 form multiple non-contact spaces G3. Each non-contact space G3 is circular when viewed from the thickness direction z, and is a space that penetrates the conductive substrate 300 in the thickness direction z. Each non-contact space G3 is filled with, for example, solder. By providing the non-contact space G3 in this way and filling the non-contact space G3 with solder, the bonding strength between the conductive substrate 300 and each insertion member 323 is increased, and the insertion members 323 and the wiring layers 301 and 303 are electrically connected. Note that each insertion member 323 and the wiring layer 302 are not electrically connected. That is, a non-contact space G3 is formed between each insertion member 323 and the insulating portion 332X (see FIG. 55) of the wiring layer 302, and each insertion member 323 is not in contact with the conductor portion 332 (see FIG. 55).

As shown in FIG. 57, the multiple (three in this embodiment) through holes 310D are provided in the portion of the conductive substrate 300 where the conductor portion 331D is formed. The multiple through holes 310D are aligned with each other in the first direction x and spaced apart from each other in the second direction y. Furthermore, each through hole 310D is aligned with each through hole 310A (see FIG. 54) in the second direction y and spaced apart from each through hole 310A in the first direction x. In other words, each through hole 310D is located at a different position from each through hole 310B in the second direction y.

The shape of each through hole 310D as viewed from the thickness direction z is, for example, approximately circular. A plurality of recesses are formed on the inner surface of each through hole 310D. The number of recesses can be changed as desired. The area of each through hole 310D as viewed from the thickness direction z is smaller than the area of each through hole 310A, 310B in a plan view. The area of each through hole 310D as viewed from the thickness direction z is equal to the area of each through hole 310C as viewed from the thickness direction z.

A plurality of insertion members 324 are inserted into each of the plurality of through holes 310D. Each of the plurality of insertion members 324 is a columnar conductive member. In this embodiment, each of the insertion members 324 has a substantially circular cross-sectional shape perpendicular to the thickness direction z. That is, each of the insertion members 324 is cylindrical. When viewed from the thickness direction z, a plurality of recesses are formed on the periphery of each of the insertion members 324. The number of recesses is not particularly limited. In addition, the cross section is not limited to a substantially circular shape, and may be a substantially elliptical shape or a substantially polygonal shape. The material of each of the insertion members 324 is, for example, Cu or a Cu alloy. Each of the insertion members 324 is in contact with the insulating substrate 340 (see FIG. 55).

In this embodiment, the diameter of the circular portion of each through hole 310D, excluding the recesses, is approximately the same as or larger than the diameter of each insertion member 324. In this embodiment, each insertion member 324 is inserted (fitted) into each through hole 310D by, for example, press fitting.

When each insertion member 324 is inserted into each through hole 310D, multiple recesses formed on the inner surface of each through hole 310D and multiple recesses formed on the side surface of each insertion member 324 form multiple non-contact spaces G4. Each non-contact space G4 is circular when viewed from the thickness direction z, and is a space that penetrates the conductive substrate 300 in the thickness direction z. Each non-contact space G4 is filled with, for example, solder. By providing the non-contact space G4 in this way and filling the non-contact space G4 with solder, the bonding strength between the conductive substrate 300 and each insertion member 324 is increased, and the conductive connection between each insertion member 324 and the wiring layers 301 and 302 is achieved. Note that the conductive connection between each insertion member 324 and the wiring layer 303 is not established. That is, a non-contact space G4 is formed between each insertion member 324 and the insulating portion 333X (see FIG. 55) of the wiring layer 303, and each insertion member 324 is not in contact with the conductor portion 333 (see FIG. 55).

As shown in FIG. 56, the multiple (three in this embodiment) through holes 310E are provided in the portion of the conductive substrate 300 where the conductor portion 331E is formed. The multiple (three in this embodiment) through holes 310F are provided in the portion of the conductive substrate 300 where the conductor portion 331F is formed. In the first direction x, the through holes 310F are disposed at a different position from the through holes 310E.

As shown in FIG. 57, the multiple (three in this embodiment) through holes 310G are provided in the portion of the conductive substrate 300 where the conductor portion 331G is formed. The multiple (three in this embodiment) through holes 310H are provided in the portion of the conductive substrate 300 where the conductor portion 331H is formed. In the first direction x, the through holes 310H are disposed at different positions from the through holes 310G.

As shown in Figures 56 and 57, each of the multiple through electrodes 325A to 325D is made of a conductive material, for example, Cu or a Cu alloy. The shape of each of the multiple through electrodes 325A to 325D as viewed from the thickness direction z is circular. The area of the multiple through electrodes 325A to 325D as viewed from the thickness direction z is smaller than the area of the multiple insertion members 323, 324 as viewed from the thickness direction z.

As shown in FIG. 56, the multiple through electrodes 325A are filled into each of the multiple through holes 310E. Each through electrode 325A may be a cylindrical electrode that covers the inner surface of each through hole 310E, rather than being filled into each through hole 310E.

The multiple through electrodes 325B are filled into each of the multiple through holes 310F. Each through electrode 325B may be a cylindrical electrode that covers the inner surface of each through hole 310F, rather than being filled into each through hole 310F.

As shown in FIG. 57, the multiple through electrodes 325C are filled in each of the multiple through holes 310G. Each through electrode 325C may be a cylindrical electrode that covers the inner surface of each through hole 310G, rather than being filled in each through hole 310G.

The multiple through electrodes 325D are filled into each of the multiple through holes 310H. Each through electrode 325D may be a cylindrical electrode that covers the inner surface of each through hole 310H, rather than being filled into each through hole 310H.

As shown in Figures 56 and 57, each of the through electrodes 325A to 325D electrically connects the wiring layers 301 and 303 (see Figure 55). In other words, each of the through electrodes 325A to 325D is not electrically connected to the wiring layer 302. Although not shown, in the wiring layer 303, the multiple conductors 331E are electrically connected to each other through the multiple through electrodes 325A, and the multiple conductors 331F are electrically connected to each other through the multiple through electrodes 325B. In addition, in the wiring layer 303, the multiple conductors 331G are electrically connected to each other through the multiple through electrodes 325C, and the multiple conductors 331H are electrically connected to each other through the multiple through electrodes 325D.

As shown in FIG. 56, the first semiconductor element 30A is disposed on the end surface of each metal member 321 on the side opposite the insulating substrate 340 in the thickness direction z. More specifically, as shown in FIG. 55, the first semiconductor element 30A is disposed on the end surface of the metal member 321 such that the element back surface 30r faces the end surface of the metal member 321. The first semiconductor element 30A is bonded to the end surface of the metal member 321 by a conductive bonding material such as Ag paste or solder. In this way, the drain electrode 31 formed on the element back surface 30r of the first semiconductor element 30A is electrically connected to the metal member 321.

As shown in FIG. 56, the source electrode 32 of each first semiconductor element 30A is electrically connected to each conductor portion 331F. That is, the source electrode 32 of a specific first semiconductor element 30A is electrically connected to the conductor portion 331F corresponding to the specific first semiconductor element 30A. The conductor portion 331F corresponding to the specific first semiconductor element 30A is the conductor portion 331F closest to the specific first semiconductor element 30A. In this embodiment, the conductor portion 331F corresponding to the specific first semiconductor element 30A is arranged so as to overlap the specific first semiconductor element 30A when viewed from the first direction x. The source electrode 32 of the first semiconductor element 30A and the conductor portion 331F are connected by a connection member 356B. The connection member 356B is, for example, a wire made of Cu, Au, Al, or an alloy containing any of these, and formed by wire bonding.

The gate electrode 33 of each first semiconductor element 30A is electrically connected to the conductor portion 331E. That is, the gate electrode 33 of a specific first semiconductor element 30A is electrically connected to the conductor portion 331E corresponding to the specific first semiconductor element 30A. The conductor portion 331E corresponding to the specific first semiconductor element 30A is the conductor portion 331E closest to the specific first semiconductor element 30A. In this embodiment, the conductor portion 331E corresponding to the specific first semiconductor element 30A is arranged so as to overlap the specific first semiconductor element 30A when viewed from the first direction x. A connection member 356A is connected to the gate electrode 33 of the first semiconductor element 30A and the conductor portion 331E. The connection member 356A is, for example, a wire made of Cu, Au, Al, or an alloy containing any of these, and formed by wire bonding.

Also, the source electrode 32 of each first semiconductor element 30A is electrically connected to the conductor portion 331C. More specifically, the source electrode 32 of the first semiconductor element 30A and the conductor portion 331C are connected by the first drive connection member 40A. When viewed from the thickness direction z, the first drive connection member 40A extends toward the first direction x. The configuration of the first drive connection member 40A of this embodiment is the same as the configuration of the first drive connection member 40A of the first embodiment. That is, the first drive connection member 40A has a first connection portion 41, a second connection portion 42, and a coupling portion 43, and is configured as a single component in which the first connection portion 41, the second connection portion 42, and the coupling portion 43 are integrally formed. Also, the first drive connection member 40A has a conductor portion 44 and a solder layer 45, similar to the first drive connection member 40A of the first embodiment.

The first connection portion 41 is a portion that is connected to the source electrode 32 of the first semiconductor element 30A. As in the first embodiment, the first connection surface of the first connection portion 41 that contacts the source electrode 32 of the first semiconductor element 30A is formed by the back side solder layer 45r.

The second connection portion 42 is a portion that is electrically connected to the conductor portion 331C. The second connection surface of the second connection portion 42 that contacts the conductor portion 331C is formed by the rear surface side solder layer 45r, as in the first embodiment. The second connection portion 42 is formed with an extension portion 48 (reference number omitted in FIG. 55), as in the first embodiment. The linking portion 43 is a portion that links the first connection portion 41 and the second connection portion 42. The linking portion 43 is formed so as to have a smooth mountain shape when viewed from the second direction y.

As shown in FIG. 57, each second semiconductor element 30B is disposed on the end surface of each metal member 322 on the side opposite to the insulating substrate 340 in the thickness direction z. More specifically, as shown in FIG. 55, the second semiconductor element 30B is disposed on the end surface of the metal member 322 such that the element back surface 30r faces the end surface of the metal member 322. The second semiconductor element 30B is bonded to the end surface of the metal member 322 by a conductive bonding material such as Ag paste or solder. In this way, the drain electrode 31 formed on the element back surface 30r of the second semiconductor element 30B is electrically connected to the metal member 322.

As shown in FIG. 58, the source electrode 32 of each second semiconductor element 30B is electrically connected to each conductor portion 331H. That is, the source electrode 32 of a specific second semiconductor element 30B is electrically connected to the conductor portion 331H corresponding to the specific second semiconductor element 30B. The conductor portion 331H corresponding to the specific second semiconductor element 30B is the conductor portion 331H closest to the specific second semiconductor element 30B. In this embodiment, the conductor portion 331H corresponding to the specific second semiconductor element 30B is arranged so as to overlap the specific second semiconductor element 30B when viewed from the first direction x. The source electrode 32 of the second semiconductor element 30B and the conductor portion 331H are connected by a connection member 356D. The connection member 356D is, for example, a wire made of Cu, Au, Al, or an alloy containing any of these, and formed by wire bonding.

The gate electrode 33 of each second semiconductor element 30B is electrically connected to the conductor portion 331G. That is, the gate electrode 33 of a specific second semiconductor element 30B is electrically connected to the conductor portion 331G corresponding to the specific second semiconductor element 30B. The conductor portion 331G corresponding to the specific second semiconductor element 30B is the conductor portion 331G closest to the specific second semiconductor element 30B. In this embodiment, the conductor portion 331G corresponding to the specific second semiconductor element 30B is arranged so as to overlap with the specific second semiconductor element 30B when viewed from the first direction x. The gate electrode 33 of the second semiconductor element 30B and the conductor portion 331G are connected by a connection member 356C. The connection member 356C is, for example, a wire made of Cu, Au, Al, or an alloy containing any of these, and formed by wire bonding.

As shown in FIG. 58, the source electrode 32 of each second semiconductor element 30B is electrically connected to the conductor portion 331D. More specifically, the source electrode 32 of the second semiconductor element 30B and the conductor portion 331D are connected by the second drive connection member 40B. The configuration of the second drive connection member 40B of this embodiment is the same as the configuration of the second drive connection member 40B of the first embodiment. That is, the second drive connection member 40B has a first connection portion 41, a second connection portion 42, and a coupling portion 43, and is configured as a single component in which the first connection portion 41, the second connection portion 42, and the coupling portion 43 are integrally formed. In addition, the second drive connection member 40B has a conductor portion 44 and a solder layer 45, similar to the second drive connection member 40B of the first embodiment.

The first connection portion 41 is a portion that is connected to the source electrode 32 of the second semiconductor element 30B. As in the first embodiment, the first connection surface of the first connection portion 41 that contacts the source electrode 32 of the second semiconductor element 30B is formed by the back side solder layer 45r.

The second connection portion 42 is a portion that is electrically connected to the conductor portion 331D. The second connection surface of the second connection portion 42 that contacts the conductor portion 331D is formed by the rear surface side solder layer 45r, as in the first embodiment. The second connection portion 42 is formed with an extension portion 48 (reference number omitted in FIG. 55), as in the first embodiment. The linking portion 43 is a portion that links the first connection portion 41 and the second connection portion 42. The linking portion 43 is formed so as to have a smooth mountain shape when viewed from the second direction y.

The pair of control terminals 353A, 353B are located next to the conductive substrate 300 in the second direction y. A drive signal for driving the multiple first semiconductor elements 30A is input to the control terminal 353A. A drive signal for driving the multiple second semiconductor elements 30B is input to the control terminal 353B.

The pair of detection terminals 354A, 354B are located next to the pair of control terminals 353A, 353B in the first direction x. The detection terminal 354A detects the voltage (voltage corresponding to the source current) applied to the source electrodes 32 of the multiple first semiconductor elements 30A. The detection terminal 354B detects the voltage (voltage corresponding to the source current) applied to the source electrodes 32 of the multiple second semiconductor elements 30B.

The multiple dummy terminals 355 are arranged in line with the pair of control terminals 353A, 353B and the pair of detection terminals 354A, 354B in the first direction x. In this embodiment, the number of dummy terminals 355 is six. The six dummy terminals 355 are arranged between the control terminal 353A and the detection terminal 354A and the control terminal 353B and the detection terminal 354B in the first direction x. Three of the dummy terminals 355 are located closer to the resin side surface 364 than the center of the sealing resin 360 in the first direction x. The remaining three dummy terminals 355 are located closer to the resin side surface 363 than the center of the sealing resin 360 in the first direction x. The number and arrangement of the dummy terminals 355 are not limited to this and can be changed arbitrarily. The dummy terminals 355 may also be omitted.

In this embodiment, the four conductors 331I, 331J, 331K, and 331L are disposed closer to the resin side surface 364 than the semiconductor elements 30A and 30B in the second direction y. The conductors 331I, 331J, 331K, and 331L are provided with four through electrodes 325E, 325F, 325G, and 325H.

The conductor portion 331I is a conductor for electrically connecting the control terminal 353A and the conductor portion 331E. The conductor portion 331J is a conductor for electrically connecting the detection terminal 354A and the conductor portion 331F. The conductor portions 331I and 331J are arranged at the end of the conductive substrate 300 on the resin side surface 363 side and the end on the resin side surface 362 side. The conductor portions 331I and 331J are arranged spaced apart from each other in the first direction x while being aligned with each other in the second direction y. The conductor portion 331J is arranged closer to the resin side surface 362 than the conductor portion 331I and is arranged closer to the resin side surface 362 than the detection terminal 354A. The shapes of the conductor portions 331I and 331J as viewed from the thickness direction z are rectangular with the long side direction being the first direction x and the short side direction being the second direction y.

The conductor portion 331K is a conductor for electrically connecting the control terminal 353B and the conductor portion 331G. The conductor portion 331L is a conductor for electrically connecting the detection terminal 354B and the conductor portion 331H. The conductor portions 331K and 331L are each arranged at an end portion of the conductive substrate 300 on the resin side surface 363 side and on the resin side surface 361 side. The conductor portions 331K and 331L are arranged spaced apart from each other in the first direction x while being aligned with each other in the second direction y. In this embodiment, the conductor portions 331K and 331L are aligned with the conductor portions 331I and 331J in the second direction y. The conductor portion 331K is arranged closer to the resin side surface 361 than the conductor portion 331L.

As shown in Figures 56 and 57, through hole 310I is provided in a portion of conductive substrate 300 where conductor portion 331I is formed. Through hole 310J is provided in a portion of conductive substrate 300 where conductor portion 331J is formed. Through hole 310K is provided in a portion of conductive substrate 300 where conductor portion 331K is formed. Through hole 310L is provided in a portion of conductive substrate 300 where conductor portion 331L is formed. In this embodiment, through holes 310I, 310J, 310K, and 310L are aligned in the second direction y.

As shown in Figures 56 and 57, the through electrodes 325E to 325H are each made of a conductive material, for example, Cu or a Cu alloy. The shape of each of the through electrodes 325E to 325H as viewed from the thickness direction z is circular. In this embodiment, the area of the through electrodes 325E to 325H as viewed from the thickness direction z is smaller than the area of the multiple insertion members 323, 324 as viewed from the thickness direction z, and is equal to the area of the through electrodes 325A to 325D as viewed from the thickness direction z.

Through electrode 325E fills through hole 310I, through electrode 325F fills through hole 310J, through electrode 325G fills through hole 310K, and through electrode 325H fills through hole 310L. Note that each of through electrodes 325E-325H may be a cylindrical member that covers the inner surface of each of through holes 310I-310L, rather than filling each of through holes 310I-310L.

The through electrode 325E is electrically connected to the through electrode 325A provided in the conductor portion 331E via the first wiring portion (conductor portion 333) of the wiring layer 303 of the conductive substrate 300. This electrically connects the conductor portion 331E and the conductor portion 331I.

The through electrode 325F is electrically connected to the through electrode 325B provided in the conductor portion 331F via the second wiring portion (conductor portion 333) of the wiring layer 303 of the conductive substrate 300. This electrically connects the conductor portion 331F and the conductor portion 331J. The second wiring portion (conductor portion 333) is electrically insulated from the first wiring portion (conductor portion 333) via the insulating portion 333X.

The through electrode 325G is electrically connected to the through electrode 325C provided in the conductor portion 331G via the third wiring portion (conductor portion 333) of the wiring layer 303 of the conductive substrate 300. This electrically connects the conductor portion 331G and the conductor portion 331K. The third wiring portion (conductor portion 333) is electrically insulated from the first wiring portion and the second wiring portion (both conductor portions 333) via the insulating portion 333X.

The through electrode 325H is electrically connected to the through electrode 325D provided in the conductor portion 331H via the fourth wiring portion (conductor portion 333) of the wiring layer 303 of the conductive substrate 300. This electrically connects the conductor portion 331H and the conductor portion 331L. The fourth wiring portion (conductor portion 333) is electrically insulated from the first to third wiring portions (all conductor portions 333) via the insulating portion 333X.

Each of the multiple connection members 356E-356H provides electrical continuity between two spaced apart components. Each of the connection members 356E-356H is made of, for example, Cu, Au, Al, or an alloy containing any of these, and is a wire formed by wire bonding.

As shown in FIG. 54, the connection member 356E is connected to the control terminal 353A and the conductor portion 331I, and provides electrical continuity between them. The connection member 356F is connected to the detection terminal 354A and the conductor portion 331J, and provides electrical continuity between them. The connection member 356G is connected to the control terminal 353B and the conductor portion 331K, and provides electrical continuity between them. The connection member 356H is connected to the detection terminal 354B and the conductor portion 331L, and provides electrical continuity between them.

The drain electrode 31, source electrode 32, and gate electrode 33 of each semiconductor element 30A, 30B are electrically connected to the external terminals of the semiconductor device 1E, that is, the first power terminal 351A, the second power terminal 351B, the output terminal 352, the pair of control terminals 353A, 353B, and the pair of detection terminals 354A, 354B, as follows.

The first power terminal 351A is electrically connected to the drain electrode 31 of each first semiconductor element 30A via the conductor portion 331A and each metal member 321. The second power terminal 351B is electrically connected to the source electrode 32 of each second semiconductor element 30B via each insertion member 324, each conductor portion 331D, and multiple second drive connection members 40B. The output terminal 352 is electrically connected to the source electrode 32 of each first semiconductor element 30A via the conductor portion 331B, each metal member 322, each insertion member 323, the conductor portion 331C, and multiple first drive connection members 40A, and is electrically connected to the drain electrode 31 of each second semiconductor element 30B via the conductor portion 331B and each metal member 322.

The control terminal 353A is electrically connected to the gate electrode 33 of each first semiconductor element 30A via the connection member 356E, the conductor portion 331I, each through electrode 325A, each conductor portion 331E, and each connection member 356A. The detection terminal 354A is electrically connected to the source electrode 32 of each first semiconductor element 30A via the connection member 356F, the conductor portion 331J, each through electrode 325B, each conductor portion 331F, and each connection member 356B. The control terminal 353B is electrically connected to the gate electrode 33 of each second semiconductor element 30B via the connection member 356G, the conductor portion 331K, each through electrode 325C, each conductor portion 331G, and each connection member 356C. The detection terminal 354B is electrically connected to the source electrode 32 of each second semiconductor element 30B via the connection member 356H, the conductor portion 331L, each through electrode 325D, each conductor portion 331H, and each connection member 356D.

In the semiconductor device 1E having such a configuration, for example, a DC power supply is connected between the first power terminal 351A and the second power terminal 351B, and a power supply voltage (DC voltage) is applied from this DC power supply. The first power terminal 351A is a P terminal connected to the positive terminal of the DC power supply, and the second power terminal 351B is an N terminal connected to the negative terminal of the DC power supply. The DC voltage input from each power terminal 351A, 351B is converted to an AC voltage by the switching operation of each semiconductor element 30A, 30B. This AC voltage is applied to the output terminal 352. The output terminal 352 is a terminal (OUT terminal) that outputs the converted AC voltage.

According to the semiconductor device 1E of this embodiment, in addition to the effects (1-1) to (1-12) of the first embodiment, the following effects can be obtained.
(5-1) The semiconductor device 1E includes a conductive substrate 300 in which a wiring layer 301, a wiring layer 302, and an insulating layer 304 are laminated. The wiring layer 301 includes a first power terminal 351A, and the wiring layer 302 includes a second power terminal 351B. When viewed from the thickness direction z, the first power terminal 351A, the second power terminal 351B, and the insulating layer 304 overlap each other. With this configuration, the first power terminal 351A and the second power terminal 351B to which a power supply voltage is applied can be made into laminate wiring, so that the length between the first power terminal 351A and the second power terminal 351B can be shortened, and the inductance between the first power terminal 351A and the second power terminal 351B can be reduced.

(5-2) The conductive substrate 300 is a multi-layer conductive substrate. In this embodiment, the conductive substrate 300 is configured by stacking wiring layers 301 to 303 and insulating layers 304 and 305. With this configuration, the wiring sections for electrically connecting each semiconductor element 30A, 30B to each terminal 351A, 351B, 352, 353A, 353B, 354A, 354B, 355 can be wired in multiple layers, so that the conductive substrate 300 can be made smaller in the first direction x and the second direction y than a single-layer conductive substrate. Therefore, the semiconductor device 1E can be made smaller in the first direction x and the second direction y.

(5-3) The semiconductor device 1E includes a metal member 321 that penetrates the conductive substrate 300 in the thickness direction z. The first semiconductor element 30A is mounted on the metal member 321. With this configuration, the heat from the first semiconductor element 30A that is generated when the semiconductor device 1E is energized can be efficiently released through the metal member 321. Therefore, the semiconductor device 1E can suppress the rise in the junction temperature of the first semiconductor element 30A, and therefore the thermal destruction of the semiconductor device 1E can be suppressed. The semiconductor device 1E also includes a metal member 322 that penetrates the conductive substrate 300 in the thickness direction z. The second semiconductor element 30B is mounted on the metal member 322. With this configuration, the heat from the second semiconductor element 30B that is generated when the semiconductor device 1E is energized can be efficiently released through the metal member 322. Therefore, the semiconductor device 1E can suppress the rise in the junction temperature of the second semiconductor element 30B, and therefore the thermal destruction of the semiconductor device 1E can be suppressed.

(5-4) The area of each of the insertion members 323, 324 as viewed from the thickness direction z is larger than the area of each of the through electrodes 325A to 325H as viewed from the thickness direction z. With this configuration, the parasitic resistance and parasitic inductance of each of the insertion members 323, 324 can be made smaller than the parasitic resistance and parasitic inductance of each of the through electrodes 325A to 325H. Each of the insertion members 323, 324 is part of the current path in the power conversion of the semiconductor device 1E, and each of the through electrodes 325A to 325H is part of the signal path in the power conversion of the semiconductor device 1E. In other words, the conduction loss of each of the insertion members 323, 324 can be reduced by making the parasitic resistance and parasitic inductance of each of the insertion members 323, 324 through which a relatively large current flows smaller than the parasitic resistance and parasitic inductance of each of the through electrodes 325A to 325H through which a relatively small current flows. In addition, a current of, for example, 400 A or more and 600 A or less may flow through the above current path.

(5-5) The area of each of the metal members 321, 322 as viewed from the thickness direction z is larger than the area of each of the insertion members 323, 324 as viewed from the thickness direction z. With this configuration, the thermal conductivity of each of the metal members 321, 322 is higher than the thermal conductivity of each of the insertion members 323, 324. Therefore, the semiconductor device 1E can increase thermal conductivity while ensuring appropriate electrical conductivity through each of the metal members 321, 322.

Sixth Embodiment
A semiconductor device 1F of the sixth embodiment will be described with reference to Figures 58 to 60. The semiconductor device 1F of this embodiment is different from the semiconductor device 1E of the fifth embodiment in that it includes metal members 391, 392 instead of the multiple metal members 321, 322, and in that the configuration of the conductive substrate 300 is different. In the following description, components common to the semiconductor device 1E of the fifth embodiment are denoted by the same reference numerals, and description thereof may be omitted.

As shown in Figures 58 and 59, the two metal members 391 and 392 are each a rectangular parallelepiped conductive member. The two metal members 391 and 392 are spaced apart in the first direction x and arranged so as to overlap when viewed from the second direction y. The constituent material of each of the metal members 391 and 392 is, for example, Cu or a Cu alloy.

The metal member 391 has multiple first semiconductor elements 30A mounted thereon and is electrically connected to the drain electrodes 31 of each of the first semiconductor elements 30A. The metal member 391, together with the conductive substrate 300, constitutes an internal circuit in the semiconductor device 1F.

The metal member 392 has multiple second semiconductor elements 30B mounted thereon and is electrically connected to the drain electrodes 31 of each of the second semiconductor elements 30B. The metal member 392, together with the conductive substrate 300, constitutes an internal circuit in the semiconductor device 1F.

The semiconductor device 1F includes two insulating substrates 341, 342 spaced apart from each other in the first direction x. The constituent materials of the insulating substrates 341, 342 are, for example, ceramics with excellent thermal conductivity. An example of such ceramics is AlN. In this embodiment, the shape of the insulating substrates 341, 342 as viewed from the thickness direction z is a rectangle whose long side direction is the second direction y and whose short side direction is the first direction x. In this embodiment, as viewed from the thickness direction z, the length of the insulating substrate 341 in the second direction y is equal to the length of the insulating substrate 342 in the second direction y, and the length of the insulating substrate 341 in the first direction x is shorter than the length of the insulating substrate 342 in the first direction x.

As shown in FIG. 60, the insulating substrates 341 and 342 are each disposed between the three grooves 367 on the resin side surface 361 side and the three grooves 367 on the resin side surface 362 side in the first direction x. The insulating substrates 341 and 342 are disposed apart from each other in the first direction x. In this embodiment, the insulating substrate 341 is disposed closer to the resin side surface 362 than the insulating substrate 342 in the first direction x. The insulating substrate 341 has a substrate main surface 341s and a substrate back surface 341r that face in opposite directions in the thickness direction z. The substrate main surface 341s and the substrate back surface 341r are spaced apart in the thickness direction z. The substrate back surface 341r is exposed from the sealing resin 360. A cooler such as a heat sink (not shown) may be connected to the substrate back surface 341r. The insulating substrate 342 has a substrate main surface 342s and a substrate back surface 342r that face in opposite directions in the thickness direction z. The substrate main surface 342s and the substrate back surface 342r are spaced apart in the thickness direction z. The substrate back surface 342r is exposed from the sealing resin 360. A cooler such as a heat sink (not shown) may be connected to the substrate back surface 342r.

A metal member 391 is disposed on the substrate main surface 341s of the insulating substrate 341, and a metal member 392 is disposed on the substrate main surface 342s of the insulating substrate 342. Therefore, the insulating substrate 341 can be said to be a support substrate that supports the metal member 391, and the insulating substrate 342 can be said to be a support substrate that supports the metal member 392.

The configuration of the insulating substrates 341, 342 is not limited to the examples shown in Figures 58 to 60, and the shape, size, number, etc. can be changed as appropriate depending on the product specifications of the semiconductor device 1F. In one example, the number of insulating substrates is not limited to two. For example, the semiconductor device 1F may include one insulating substrate, and two metal members 391, 392 may be arranged on this one insulating substrate.

The conductive substrate 300 is disposed so as to span the gap between the two metal members 391, 392 in the first direction x, and is conductively joined to each of the metal members 391, 392 by a conductive bonding material. Therefore, it can be said that the conductive substrate 300 is supported conductively by each of the metal members 391, 392. When viewed from the thickness direction z, the conductive substrate 300 surrounds each of the first semiconductor elements 30A and each of the second semiconductor elements 30B. When viewed from the first direction x and the second direction y, the conductive substrate 300 overlaps with each of the first semiconductor elements 30A and each of the second semiconductor elements 30B. On the other hand, when viewed from the first direction x and the second direction y, the conductive substrate 300 does not overlap with each of the metal members 391, 392.

The conductive substrate 300 is a laminated substrate in which three wiring layers 301, 302, and 303 and two insulating layers 304 and 305 are laminated in the thickness direction z. The stacking order of the three wiring layers 301 to 303 and the two insulating layers 304 and 305 is the same as that of the conductive substrate 300 of the fifth embodiment.

The wiring layer 301 has a plurality of conductors 331A-331F and an insulating portion 331X. The plurality of conductors 331A-331F are spaced apart from one another and are insulated from one another by the insulating portion 331X. The wiring layer 302 has a conductor 332 and an insulating portion 332X. The wiring layer 303 has two conductors 333A and 333B and an insulating portion 333X. The two conductors 333 are spaced apart from one another and are insulated from one another by the insulating portion 333X. The conductor 333A is electrically connected to the metal member 391, and the conductor 333B is electrically connected to the metal member 392.

As shown in FIG. 59, the conductor portion 331A of the wiring layer 301 is a conductor portion provided to suppress warping of the conductive substrate 300. In this embodiment, the conductor portion 331A is a comb-like shape extending toward the resin side surface 361 in the first direction x and toward the resin side surface 362 in the first direction x, centered on the conductor wiring extending in the second direction y. The conductor portion 331B is a conductor portion provided to suppress warping of the conductive substrate 300. In this embodiment, three conductor portions 331B are provided. The three conductor portions 331B are electrically insulated from each other by the insulating portion 331X.

The conductor portion 331C is a conductor for electrically connecting the gate electrode 33 of the semiconductor element 30A to the control terminal 353A. The conductor portion 331D is a conductor for electrically connecting the source electrode 32 of the semiconductor element 30A to the detection terminal 354A. The conductor portions 331C and 331D are each disposed closer to the resin side surface 362 than the semiconductor element 30A in the first direction x. The conductor portions 331C and 331D are disposed spaced apart from each other in the first direction x. When viewed from the thickness direction z, the conductor portions 331C and 331D are each shaped like a narrow strip whose long side is in the second direction y and whose short side is in the first direction x.

The conductor portion 331E is a conductor for electrically connecting the gate electrode 33 of the semiconductor element 30B to the control terminal 353B. The conductor portion 331F is a conductor for electrically connecting the source electrode 32 of the semiconductor element 30B to the detection terminal 354B. The conductor portions 331E and 331F are each disposed closer to the resin side surface 361 than the semiconductor element 30B in the first direction x. The conductor portions 331E and 331F are disposed spaced apart from each other in the first direction x. When viewed from the thickness direction z, the conductor portions 331E and 331F are each shaped like a narrow strip whose long side is in the second direction y and whose short side is in the first direction x.

The first power terminal 351A is part of the conductor portion 333A. The second power terminal 351B is part of the conductor portion 332. The output terminal 352 is part of the conductor portion 333B. In the semiconductor device 1F, as in the semiconductor device 1E, the first power terminal 351A and the second power terminal 351B overlap when viewed in the thickness direction z. On the other hand, in the semiconductor device 1F, the positional relationship in the thickness direction z of the first power terminal 351A and the second power terminal 351B is different from that of the semiconductor device 1E. Specifically, the first power terminal 351A is arranged closer to the resin back surface 366 than the second power terminal 351B in the thickness direction z.

In the thickness direction z, an insulating layer 304 is interposed between the first power terminal 351A and the second power terminal 351B. The surface of the first power terminal 351A opposite the insulating layer 304 in the thickness direction z is exposed to the outside of the semiconductor device 1F, and the surface of the first power terminal 351A facing the insulating layer 304 is in contact with the insulating layer 304. The surface of the second power terminal 351B opposite the insulating layer 304 in the thickness direction z is exposed to the outside of the semiconductor device 1F, and the surface of the second power terminal 351B facing the insulating layer 304 is in contact with the insulating layer 304.

The conductive substrate 300 is provided with a plurality of through holes 306A, 306B and a plurality of recesses 307A, 307B.
The plurality of through holes 306A, 306B each penetrate the conductive substrate 300 in the thickness direction z. That is, the through holes 306A, 306B penetrate the wiring layers 301 to 303 and the insulating layers 304, 305 in the thickness direction z. Therefore, the plurality of through holes 306A, 306B can be said to be a plurality of openings penetrating the conductive substrate 300 in the thickness direction z. A metal member 391 is exposed from each through hole 306A, and a metal member 392 is exposed from each through hole 306B. Each through hole 306A accommodates a first semiconductor element 30A, and each through hole 306B accommodates a second semiconductor element 30B. In other words, the first semiconductor element 30A is disposed in the through hole 306A so as to be conductive with the metal member 391, and the second semiconductor element 30B is disposed in the through hole 306B so as to be conductive with the metal member 392. Therefore, the through hole 306A can be said to be a first opening, and the through hole 306B can be said to be a second opening. The area of each through hole 306A as viewed from the thickness direction z is larger than the area of each first semiconductor element 30A as viewed from the thickness direction z. Also, as viewed from the thickness direction z, each through hole 306A overlaps with the entire first semiconductor element 30A. The area of each through hole 306B as viewed from the thickness direction z is larger than the area of each second semiconductor element 30B as viewed from the thickness direction z. Also, as viewed from the thickness direction z, each through hole 306B overlaps with the entire second semiconductor element 30B.

Each of the recesses 307A and 307B is a portion recessed in the thickness direction z from the surface of the conductive substrate 300 on the wiring layer 301 side. Each of the recesses 307A and 307B penetrates the wiring layer 301 and the insulating layer 304 in the thickness direction z, and does not penetrate the wiring layers 302, 303, and the insulating layer 305 in the thickness direction z. A conductor portion 332 is exposed from each recess 307A. In this embodiment, each recess 307A is connected to each through hole 306A in the wiring layer 301 and the insulating layer 304, but these do not have to be connected. Each of the recesses 307B penetrates the wiring layer 301, the insulating layer 304, the wiring layer 302, and the insulating layer 305 in the thickness direction z, and does not penetrate the wiring layer 303 in the thickness direction z. A conductor portion 333A is exposed from each recess 307B.

The source electrode 32 of each first semiconductor element 30A and the conductor portion 333A are connected by a first drive connection member 40A. Each first drive connection member 40A passes through the inside of each recess 307B and is joined to an exposed portion of the conductor portion 333A of the wiring layer 303.

The first drive connection member 40A is formed so as to straddle the portion between the through hole 306A and the recess 307A of the conductive substrate 300 in the first direction x. When viewed from the thickness direction z, the first drive connection member 40A extends toward the first direction x. The configuration of the first drive connection member 40A of this embodiment is the same as the configuration of the first drive connection member 40A of the first embodiment. That is, the first drive connection member 40A has a first connection portion 41, a second connection portion 42, and a coupling portion 43, and is configured as a single component in which the first connection portion 41, the second connection portion 42, and the coupling portion 43 are integrally formed. In addition, the first drive connection member 40A has a conductor portion 44 and a solder layer 45, similar to the first drive connection member 40A of the first embodiment.

The first connection portion 41 is a portion that is connected to the source electrode 32 of the first semiconductor element 30A. As in the first embodiment, the first connection surface of the first connection portion 41 that contacts the source electrode 32 of the first semiconductor element 30A is formed by the back side solder layer 45r.

The second connection portion 42 is a portion that is electrically connected to the conductor portion 333A. The second connection surface of the second connection portion 42 that contacts the conductor portion 333A is formed by the rear surface side solder layer 45r, as in the first embodiment. The second connection portion 42 is formed with an extension portion 48 (reference number omitted in FIG. 55), as in the first embodiment. The linking portion 43 is a portion that links the first connection portion 41 and the second connection portion 42. The linking portion 43 is formed so as to have a smooth mountain shape when viewed from the second direction y.

The source electrode 32 and the conductor portion 332 of each second semiconductor element 30B are connected by a second drive connection member 40B. Each second drive connection member 40B passes through the inside of each recess 307A and is joined to an exposed portion of the conductor portion 332 of the wiring layer 302.

The second drive connection member 40B is disposed in the space formed by the through hole 306B and the recess 307B in the first direction x. When viewed from the thickness direction z, the second drive connection member 40B extends toward the first direction x. The configuration of the second drive connection member 40B of this embodiment is the same as the configuration of the second drive connection member 40B of the first embodiment. That is, the second drive connection member 40B has a first connection portion 41, a second connection portion 42, and a coupling portion 43, and is configured as a single component in which the first connection portion 41, the second connection portion 42, and the coupling portion 43 are integrally formed. In addition, the second drive connection member 40B has a conductor portion 44 and a solder layer 45, similar to the second drive connection member 40B of the first embodiment.

The first connection portion 41 is a portion that is connected to the source electrode 32 of the second semiconductor element 30B. As in the first embodiment, the first connection surface of the first connection portion 41 that contacts the source electrode 32 of the second semiconductor element 30B is formed by the back side solder layer 45r.

The second connection portion 42 is a portion that is electrically connected to the conductor portion 332. The second connection surface of the second connection portion 42 that contacts the conductor portion 332 is formed by the rear surface side solder layer 45r, as in the first embodiment. The second connection portion 42 is formed with an extension portion 48 (reference number omitted in FIG. 60), as in the first embodiment. The linking portion 43 is a portion that links the first connection portion 41 and the second connection portion 42. The linking portion 43 is formed so as to have a smooth mountain shape when viewed from the second direction y.

The multiple connection members 356A are connected to the gate electrode 33 and conductor portion 331C of each first semiconductor element 30A, and provide electrical continuity between them. The multiple connection members 356C are connected to the gate electrode 33 and conductor portion 331E of each first semiconductor element 30A, and provide electrical continuity between them. The multiple connection members 356C are connected to the source electrode 32 and conductor portion 331D of each first semiconductor element 30A, and provide electrical continuity between them. The multiple connection members 356D are connected to the source electrode 32 and conductor portion 331F of each second semiconductor element 30B, and provide electrical continuity between them.

The connection member 356E is connected to the control terminal 353A and the conductor portion 331C, and provides electrical continuity between them. The connection member 356F is connected to the detection terminal 354A and the conductor portion 331D, and provides electrical continuity between them. The connection member 356G is connected to the control terminal 353B and the conductor portion 331E, and provides electrical continuity between them. The connection member 356H is connected to the detection terminal 354B and the conductor portion 331F, and provides electrical continuity between them.

The drain electrode 31, source electrode 32, and gate electrode 33 of each of the first semiconductor elements 30A and second semiconductor elements 30B are electrically connected to the first power terminal 351A, the second power terminal 351B, the output terminal 352, the pair of control terminals 353A, 353B, and the pair of detection terminals 354A, 354B, which are external terminals of the semiconductor device 1F, as follows.

The first power terminal 351A is electrically connected to the drain electrode 31 of each first semiconductor element 30A via the metal member 391. The second power terminal 351B is electrically connected to each second semiconductor element 30B via the conductor portion 332 and each second drive connection member 40B. The output terminal 352 is electrically connected to the drain electrode 31 of each second semiconductor element 30B via the conductor portion 333A and each first drive connection member 40A.

The control terminal 353A is electrically connected to the gate electrode 33 of each first semiconductor element 30A via the connection member 356E, the conductor portion 331C, and each connection member 356A. The detection terminal 354A is electrically connected to the source electrode 32 of each first semiconductor element 30A via the connection member 356F, the conductor portion 331D, and each connection member 356B. The control terminal 353B is electrically connected to the gate electrode 33 of each second semiconductor element 30B via the connection member 356G, the conductor portion 331E, and each connection member 356C. The detection terminal 354B is electrically connected to the source electrode 32 of each second semiconductor element 30B via the connection member 356H, the conductor portion 331F, and each connection member 356D.

According to the semiconductor device 1F of this embodiment, in addition to the effects (1-1) to (1-12) of the first embodiment and (5-1) and (5-2) of the fifth embodiment, the following effects can be obtained.
(6-1) The semiconductor device 1F includes a metal member 391 on which the first semiconductor element 30A is mounted, and a metal member 392 on which the second semiconductor element 30B is mounted. With this configuration, the heat from the semiconductor elements 30A and 30B generated when the semiconductor device 1F is energized can be efficiently released through the metal members 391 and 392. Therefore, the semiconductor device 1F can suppress an increase in the junction temperature of the semiconductor elements 30A and 30B, and therefore can suppress thermal destruction of the semiconductor device 1F. In particular, the metal members 391 and 392 have a larger volume than the metal members 321 and 322 of the semiconductor device 1E of the fifth embodiment, and therefore the semiconductor device 1F can more efficiently release heat from the semiconductor elements 30A and 30B than the semiconductor device 1E.

[Application examples of semiconductor device]
An example of a circuit configuration formed using the semiconductor devices 1A to 1F will be described. Note that, for the sake of convenience, the body diode 34 is omitted in FIGS.

As a first example of the circuit configuration, FIG. 61 shows a three-phase AC inverter 500 configured using semiconductor devices 1A to 1F. In the three-phase AC inverter 500, for example, a semiconductor device 1A configuring a U-phase inverter, a semiconductor device 1A configuring a V-phase inverter, and a semiconductor device 1A configuring a W-phase inverter are connected in parallel to each other. The U-phase inverter, the V-phase inverter, and the W-phase inverter may be configured using any of the semiconductor devices 1B to 1D instead of the semiconductor device 1A. The three-phase AC inverter 500 is configured to use a SiCMOSFET as the semiconductor element 30 and to connect a snubber capacitor C between the power supply terminal PL and the ground terminal NL. It is also possible to realize a three-phase AC inverter (not shown) in which an IGBT is used as the semiconductor element 30 and a snubber capacitor C is connected between the power supply terminal PL and the ground terminal NL. In this case, the three-phase AC inverter 500 further includes a diode connected inversely parallel to the IGBT.

61, when any of the semiconductor devices 1A to 1F is connected to a power source E and a switching operation is performed, the switching speed of the SiCMOSFET is fast, and a large surge voltage Ldi/dt is generated due to the inductance L of the connection line. For example, if the current change di=300 A and the time change dt associated with switching=100 nsec, then di/dt=3×10 ⁹ (A/s).

The value of the surge voltage Ldi/dt changes depending on the value of inductance L, but this surge voltage Ldi/dt is superimposed on the power supply E. This surge voltage Ldi/dt can be absorbed by the snubber capacitor C connected between the power supply terminal PL and the ground terminal NL.

As a second example of the above circuit configuration, FIG. 62 shows a three-phase AC inverter 510 configured using semiconductor devices 1A to 1F.
The three-phase AC inverter 510 includes a power module unit 512 connected to a gate driver 511, a power source or storage battery 513, and a converter 514, and controls the driving of a three-phase AC motor unit 515. The power module unit 512 is connected to a U-phase inverter, a V-phase inverter, and a W-phase inverter corresponding to the U-phase, V-phase, and W-phase of the three-phase AC motor unit 515.

The gate driver 511 is connected to the gate electrodes 33 of the first semiconductor element group 30AT and the second semiconductor element group 30BT of the semiconductor device 1A constituting the U-phase inverter, the gate electrodes 33 of the first semiconductor element group 30AT and the second semiconductor element group 30BT of the semiconductor device 1A constituting the V-phase inverter, and the gate electrodes 33 of the first semiconductor element group 30AT and the second semiconductor element group 30BT of the semiconductor device 1A constituting the W-phase inverter. The gate driver 511 is also connected to the source electrodes 32 of the first semiconductor element group 30AT and the second semiconductor element group 30BT of the semiconductor device 1A constituting the U-phase inverter, the source electrodes 32 of the first semiconductor element group 30AT and the second semiconductor element group 30BT of the semiconductor device 1A constituting the V-phase inverter, and the source electrodes 32 of the first semiconductor element group 30AT and the second semiconductor element group 30BT of the semiconductor device 1A constituting the W-phase inverter.

The power module section 512 is connected between the positive terminal (+) P and the negative terminal (-) N of the converter 514 to which the power source or storage battery 513 is connected, and includes the semiconductor element groups 30AT and 30BT of the semiconductor device 1A constituting the U-phase inverter, the semiconductor element groups 30AT and 30BT of the semiconductor device 1A constituting the V-phase inverter, and the semiconductor element groups 30AT and 30BT of the semiconductor device 1A constituting the W-phase inverter.

A freewheel diode 516 is connected in anti-parallel between the source electrode 32 and the drain electrode 31 of each of the semiconductor element groups 30AT, 30BT of each phase inverter. In the three-phase AC inverter 510 of FIG. 62, each phase inverter of the power module section 512 may be composed of any of the semiconductor devices 1B to 1F instead of the semiconductor device 1A. When each phase inverter is composed of the semiconductor device 1C, the freewheel diode 516 is composed of the diodes 100A, 100B.

[Example of change]
The above-mentioned embodiments are examples of possible forms of the semiconductor device and the manufacturing method of the semiconductor device according to the present disclosure, and are not intended to limit the forms. The semiconductor device and the manufacturing method of the semiconductor device according to the present disclosure may take forms different from those exemplified in the above-mentioned embodiments. One example is a form in which a part of the configuration of each of the above-mentioned embodiments is replaced, changed, or omitted, or a form in which a new configuration is added to each of the above-mentioned embodiments. The following modified examples can be combined with each other as long as no technical contradiction occurs. In the following modified examples, the parts common to each of the above-mentioned embodiments are given the same reference numerals as each of the above-mentioned embodiments, and the description thereof may be omitted.

- In the first to third embodiments, the first mounting layers 13A, 13B, the second mounting layers 14A, 14B, the second mounting layers 14C, 14D, 14E, and the conductive layers 15A, 15B may be connected by the first driving connection member 40A (second driving connection member 40B) instead of the substrate connection members 90A to 90D.

In the first to third embodiments, the power supply current terminal 57 may be omitted. In this case, the power supply current terminal connecting member 28 is also omitted.
In the first to third embodiments, the thermistor 21 may be omitted. In addition, the thermistor mounting layer 20, the pair of temperature detection terminals 58, and the pair of thermistor connecting members 29 may be omitted.

In the first to third embodiments, either the first substrate 11 or the second substrate 12 may be omitted from the substrate 10. If the second substrate 12 is omitted, then the first mounting layer 13B, the second mounting layers 14B and 14E, the conductive layer 15B, the first control layer 16B, the first detection layer 17B, the second control layer 18B, the second detection layer 19B, the first semiconductor element 30A mounted on the first mounting layer 13B, and the second semiconductor element 30B mounted on the second mounting layers 14B and 14E are primarily omitted. When the first substrate 11 is omitted, the first mounting layer 13A, the second mounting layers 14A, 14C, and 14D, the conductive layer 15A, the first control layer 16A, the first detection layer 17A, the second control layer 18A, the second detection layer 19A, the first semiconductor element 30A mounted on the first mounting layer 13A, and the second semiconductor element 30B mounted on the second mounting layers 14A and 14D are mainly omitted.

- In each embodiment, the number of first semiconductor elements 30A and second semiconductor elements 30B can be changed arbitrarily. Also, in the third embodiment, the number of diodes 100A, 100B can be changed arbitrarily. In one example, as shown in FIG. 63, three first semiconductor elements 30A and three diodes 100A are mounted on the main mounting portion 13a of the first mounting layer 13A, and three first semiconductor elements 30A and three diodes 100A are mounted on the main mounting portion 13c of the first mounting layer 13B. Also, three second semiconductor elements 30B and three diodes 100B are mounted on the second mounting layer 14A, and three second semiconductor elements 30B and three diodes 100B are mounted on the main mounting portion 14a of the second mounting layer 14B.

As shown in FIG. 54, of the three first semiconductor elements 30A mounted on the main mounting portion 13a of the first mounting layer 13A, the first semiconductor element 30A closest to the substrate side surface 11c is arranged at the end of the main mounting portion 13a on the substrate side surface 11c side in the first direction x, the first semiconductor element 30A closest to the substrate side surface 11d is arranged at the end of the main mounting portion 13a on the substrate side surface 11d side in the first direction x, and the remaining first semiconductor elements 30A are arranged in the center of the main mounting portion 13a in the first direction x. The three first semiconductor elements 30A mounted on the main mounting portion 13c of the first mounting layer 13B are arranged in a similar manner.

Of the three second semiconductor elements 30B mounted on the second mounting layer 14A, the second semiconductor element 30B closest to the substrate side surface 11c is arranged at the end of the second mounting layer 14A on the substrate side surface 11c side in the first direction x, the second semiconductor element 30B closest to the substrate side surface 11d is arranged at the end of the second mounting layer 14A on the substrate side surface 11d side in the first direction x, and the remaining second semiconductor elements 30B are arranged in the center of the second mounting layer 14A in the first direction x. The three second semiconductor elements 30B mounted on the main mounting portion 14a of the second mounting layer 14B are arranged in a similar manner.

In the first embodiment, the positions of the control layers 16A, 16B, 18A, 18B and the detection layers 17A, 17B, 19A, 19B can be changed arbitrarily. In one example, as shown in FIG. 64, in the second direction y, the second control layer 18A and the second detection layer 19A may be arranged between the second mounting layer 14A and the main conductive portion 15a of the conductive layer 15A, and the second control layer 18B and the second detection layer 19B may be arranged between the main mounting portion 14a of the second mounting layer 14B and the conductive layer 15B. In this case, as shown in FIG. 64 and FIG. 65, the second driving connection member 40B connected to the second semiconductor element 30B mounted on the second mounting layer 14A is connected to the main conductive portion 15a of the conductive layer 15A across the second control layer 18A and the second detection layer 19A in the second direction y. In addition, the second drive connection member 40B connected to the second semiconductor element 30B mounted on the main mounting portion 14a of the second mounting layer 14B is connected to the conductive layer 15B across the second control layer 18B and the second detection layer 19B in the second direction y.

In the third embodiment, the positions of the control layers 16A, 16B, 18A, 18B and the detection layers 17A, 17B, 19A, 19B can be changed arbitrarily. In one example, as shown in FIG. 66, similar to FIG. 64, in the second direction y, the second control layer 18A and the second detection layer 19A may be arranged between the second mounting layer 14A and the main conductive portion 15a of the conductive layer 15A, and the second control layer 18B and the second detection layer 19B may be arranged between the main mounting portion 14a of the second mounting layer 14B and the conductive layer 15B. In this case, as shown in FIG. 66 and FIG. 67, the second driving connection member 40B connected to the second semiconductor element 30B mounted on the second mounting layer 14A is connected to the main conductive portion 15a of the conductive layer 15A across the second control layer 18A and the second detection layer 19A in the second direction y. In addition, the second drive connection member 40B connected to the second semiconductor element 30B mounted on the main mounting portion 14a of the second mounting layer 14B is connected to the conductive layer 15B across the second control layer 18B and the second detection layer 19B in the second direction y.

- Although the semiconductor devices 1A to 1D of the above embodiments constitute a half-bridge type inverter, this is not limited thereto. For example, as shown in FIG. 68, a semiconductor element 30 and a diode 100 may be connected in inverse parallel. More specifically, the diode 100 is mounted on the first mounting layers 13A and 13B. The diode 100 has the same configuration as the diode 100A, and the cathode electrode 101 (see FIG. 69 for both) formed on the diode back surface 100r is electrically connected to the first mounting layers 13A and 13B. The anode electrode 102 of the diode 100 mounted on the first mounting layer 13A and the second mounting layer 14A are connected by the third drive connection member 40C. That is, the anode electrode 102 of the diode 100 mounted on the first mounting layer 13A and the second mounting layer 14A are electrically connected. The anode electrode 102 of the diode 100 mounted on the first mounting layer 13B and the main mounting portion 14a of the second mounting layer 14B are connected by the third drive connection member 40C. That is, the anode electrode 102 of the diode 100 mounted on the first mounting layer 13B and the second mounting layer 14B are electrically connected. The configuration of the conductor portion 44 and the solder layer 45 of the third drive connection member 40C is the same as the configuration of the conductor portion 44 and the solder layer 45 of the first drive connection member 40A.

The anode electrode 102 of the diode 100 and the first detection layers 17A and 17B are connected by the first detection connection members 23A and 23B. That is, the anode electrode 102 of the diode 100 and the first detection layers 17A and 17B (first detection terminal 54) are electrically connected.

As shown in FIG. 69, the third drive connection member 40C has the first connection portion 41, the second connection portion 42, and the coupling portion 43, similar to the first drive connection member 40A of the first embodiment. Although not shown in FIG. 68 and FIG. 69, the third drive connection member 40C has the surfaces of the conductor portions 44 constituting the first connection portion 41, the second connection portion 42, and the coupling portion 43 covered with a solder layer, similar to the first drive connection member 40A of the first embodiment. That is, the conductor main surface 44s of the conductor portion 44 constituting the first connection portion 41 is covered with the main surface side solder layer 45s, the conductor back surface 44r of the conductor portion 44 constituting the first connection portion 41 is covered with the back surface side solder layer 45r, and the conductor side surface 44a of the conductor portion 44 constituting the first connection portion 41 is covered with the side surface side solder layer 45a. In this embodiment, in a cross-sectional view of the first connection portion 41, the main surface side solder layer 45s is in contact with the conductor main surface 44s, and the back surface side solder layer 45r is in contact with the conductor back surface 44r. Also, the side surface side solder layer 45a is in contact with the conductor side surface 44a. The conductor main surface 44s of the conductor portion 44 constituting the second connection portion 42 is covered by the main surface side solder layer 45s, the conductor back surface 44r of the conductor portion 44 constituting the second connection portion 42 is covered by the back surface side solder layer 45r, and the conductor side surface 44a of the conductor portion 44 constituting the second connection portion 42 is covered by the side surface side solder layer 45a. In this embodiment, in a cross-sectional view of the second connection portion 42, the main surface side solder layer 45s is in contact with the conductor main surface 44s, and the back surface side solder layer 45r is in contact with the conductor back surface 44r. Also, the side surface side solder layer 45a is in contact with the conductor side surface 44a. The conductor main surface 44s of the conductor portion 44 constituting the connecting portion 43 is covered by the main surface side solder layer 45s, the conductor back surface 44r of the conductor portion 44 constituting the connecting portion 43 is covered by the back surface side solder layer 45r, and the conductor side surface 44a of the conductor portion 44 constituting the connecting portion 43 is covered by the side surface side solder layer 45a. In this embodiment, in a cross-sectional view of the connecting portion 43, the main surface side solder layer 45s is in contact with the conductor main surface 44s, and the back surface side solder layer 45r is in contact with the conductor back surface 44r. In addition, the side surface side solder layer 45a is in contact with the conductor side surface 44a. The third drive connecting member 40C shown in Figures 68 and 69 is configured as a single component in which the first connecting portion 41, the second connecting portion 42, and the connecting portion 43 are integrally formed. The first connecting portion 41 is a portion connected to the anode electrode 102 of the diode 100. The second connection portion 42 is a portion that is connected to the second mounting layer 14A. The linking portion 43 is a portion that links the first connection portion 41 and the second connection portion 42.

As shown in FIG. 68, a semiconductor element 30 is mounted on each of the main mounting portions 14a of the second mounting layer 14A and the second mounting layer 14B. The drain electrode 31 of the semiconductor element 30 mounted on the second mounting layer 14A is electrically connected to the second mounting layer 14A. The source electrode 32 of the semiconductor element 30 mounted on the second mounting layer 14A and the conductive layer 15A are connected by the first driving connection member 40A. That is, the source electrode 32 of the semiconductor element 30 mounted on the second mounting layer 14A and the conductive layer 15A are electrically connected. The source electrode 32 of the semiconductor element 30 mounted on the second mounting layer 14B and the conductive layer 15B are connected by the first driving connection member 40A. That is, the source electrode 32 of the semiconductor element 30 mounted on the second mounting layer 14A and the conductive layer 15B are electrically connected. In this manner, the cathode electrode 101 of the diode 100 mounted on the first mounting layers 13A and 13B is electrically connected to the first input terminal 51A, and the anode electrode 102 is electrically connected to the first output terminal 52A and the second output terminal 52B. The drain electrode 31 of the semiconductor element 30 mounted on the second mounting layers 14A and 14B is electrically connected to the anode electrode 102 of the diode 100 and each of the output terminals 52A and 52B, and the source electrode 32 is electrically connected to the second input terminal 51B.

As shown in FIG. 69, the first drive connection member 40A has a first connection portion 41, a second connection portion 42, and a linking portion 43, similar to the first drive connection member 40A of the first embodiment. The first drive connection member 40A shown in FIG. 68 and FIG. 69 is configured as a single component in which the first connection portion 41, the second connection portion 42, and the linking portion 43 are integrally formed. The first connection portion 41 is a portion that is connected to the source electrode 32 of the semiconductor element 30. The second connection portion 42 is a portion that is connected to the conductive layer 15A. The linking portion 43 is a portion that links the first connection portion 41 and the second connection portion 42.

- In the modified examples shown in Figures 68 and 69, the number of diodes 100 and the number of semiconductor elements 30 can each be changed as desired. The number of diodes 100 and the number of semiconductor elements 30 may be different from each other. In one example, as shown in Figure 70, the number of semiconductor elements 30 may be less than the number of diodes 100. In Figure 70, there are 10 diodes 100 and 6 semiconductor elements 30.

- Although the semiconductor devices 1A to 1D in the above embodiments include multiple semiconductor elements 30, the present invention is not limited to this and may include a single semiconductor element 30. In other words, the semiconductor devices 1A to 1D may be discrete semiconductors. Figures 71 and 72 show an example of a semiconductor device 1E that is a discrete semiconductor. Note that the drive connection member 440 shown in Figure 72 is shown to be thicker than the drive connection member 440 in Figure 71 in order to clearly show its configuration.

The semiconductor device 1E in Figures 71 and 72 has a sealing resin 450 that is approximately rectangular when viewed from the thickness direction z. In the following description of the semiconductor device 1E, the direction of the long side of the sealing resin 450 when viewed from the thickness direction z is defined as the first direction x, and the direction of the short side of the sealing resin 450 is defined as the second direction y.

The sealing resin 450 is made of an electrically insulating material, for example, black epoxy resin. The sealing resin 450 has resin side surfaces 451, 452 spaced apart from each other in the first direction x and facing opposite sides in the first direction x, and resin side surfaces 453, 454 spaced apart from each other in the second direction y and facing opposite sides in the second direction y. The sealing resin 450 also has a resin top surface 455 and a resin back surface 456 facing opposite sides in the thickness direction z.

As shown in FIG. 71, the semiconductor device 1E has a so-called lead frame structure that includes a lead frame 400. The lead frame 400 is integrated with the sealing resin 450. The lead frame 400 is provided so as to be exposed from the side opposite the resin top surface 455 (the resin back surface 456 side) in the thickness direction z relative to the sealing resin 450. The constituent material of the lead frame 400 is not particularly limited, but is, for example, Cu or a Cu alloy. The lead frame 400 has a die pad portion 410 and a plurality of terminal portions 420.

71 and 72, the die pad portion 410 is a portion on which the semiconductor element 30 is mounted. In the semiconductor device 1E shown in FIG. 71 and FIG. 72, one semiconductor element 30 is mounted on the die pad portion 410. The semiconductor element 30 is bonded to the die pad portion 410 by a conductive bonding material such as Ag paste. The shape of the semiconductor element 30 seen from the thickness direction z is a rectangle whose long side direction is the first direction x and whose short side direction is the second direction y. The drain electrode 31 formed on the element back surface 30r of the semiconductor element 30 is conductive with the die pad portion 410. The semiconductor element 30 shown in FIG. 71 and FIG. 72 has a source electrode 32, a gate electrode 33, and a detection electrode 35 formed on the element main surface 30s. The source electrode 32 is formed over most of the element main surface 30s. The shape of the source electrode 32 seen from the thickness direction z is a concave shape with one side open in the first direction x. The gate electrode 33 and the detection electrode 35 are disposed in a recess in the source electrode 32. The detection electrode 35 is disposed in a region surrounded by the gate electrode 33 and the source electrode 32.

The multiple terminals 420 include a drive terminal 420A, a control terminal 420B, and a detection terminal 420C. The drive terminal 420A is a terminal through which the source current of the semiconductor element 30 flows. The control terminal 420B is a terminal for applying a gate voltage to the gate electrode 33 of the semiconductor element 30. The detection terminal 420C is a terminal for detecting information related to the semiconductor element 30. An example of the information related to the semiconductor element 30 is the temperature of the semiconductor element 30.

The driving terminal section 420A has a pad section 421 and a plurality of terminal sections 422. For example, the driving terminal section 420A is configured as a single component in which the pad section 421 and the plurality of terminal sections 422 are integrally formed. The shape of the pad section 421 as viewed from the thickness direction z is a substantially rectangular shape with the long side direction being the first direction x and the short side direction being the second direction y. In the thickness direction z, the pad section 421 is arranged so as to be closer to the resin top surface 455 of the sealing resin 450 than the die pad section 410. The pad section 421 is also arranged so as to be closer to the resin top surface 455 than the source electrode 32 of the semiconductor element 30. The plurality of terminal sections 422 are arranged at equal pitches in the first direction x.

The control terminal section 420B has a pad section 423 and a terminal section 424. For example, the control terminal section 420B is configured as a single component in which the pad section 423 and the terminal section 424 are integrally formed. The pad section 423 is aligned with the pad section 421 of the drive terminal section 420A in the thickness direction z and is spaced apart from the pad section 421 in the first direction x. The control terminal section 420B and the gate electrode 33 are connected by a control wire 431. The control wire 431 is bonded to each of the pad section 423 of the control terminal section 420B and the gate electrode 33 by, for example, wire bonding.

The detection terminal portion 420C has a pad portion 425 and a terminal portion 426. For example, the detection terminal portion 420C is configured as a single component in which the pad portion 425 and the terminal portion 426 are integrally formed. The pad portion 425 is arranged apart from the pad portion 423 in the first direction x while being aligned with the pad portion 423 of the control terminal portion 420B in the thickness direction z. In Figs. 71 and 72, the shape of the detection terminal portion 420C is the same as that of the control terminal portion 420B. The detection terminal portion 420C and the detection electrode 35 are connected by a detection wire 432. The detection wire 432 is bonded to the detection terminal portion 420C and the detection electrode 35, for example, by wire bonding. The shapes of the detection terminal portion 420C and the control terminal portion 420B can be changed arbitrarily. For example, the shape of the detection terminal portion 420C and the shape of the control terminal portion 420B may be different from each other.

The sealing resin 450 seals a part of the die pad portion 410, the semiconductor element 30, a part of each terminal portion 420, the control wire 431, and the detection wire 432. As shown in FIG. 72, the back surface 411 of the die pad portion 410 is exposed from the sealing resin 450. A part of the die pad portion 410 protrudes from the resin side surface 453 of the sealing resin 450 in the second direction y. The terminal portion 422 of the drive terminal portion 420A, the terminal portion 424 of the control terminal portion 420B, and the terminal portion 426 of the detection terminal portion 420C each protrude from the resin side surface 454 of the sealing resin 450 in the second direction y.

As shown in Figures 71 and 72, the semiconductor device 1E includes a drive connection member 440. The drive connection member 440 connects the drive terminal portion 420A and the source electrode 32. In other words, the drive terminal portion 420A and the source electrode 32 are electrically connected by the drive connection member 440. The drive connection member 440 is sealed with a sealing resin 450.

As shown in FIG. 72, the drive connection member 440 includes a sheet-like conductor portion 444 and a solder layer 445 that covers the surface of the conductor portion 444, and has a first connection portion 441, a second connection portion 442, and a coupling portion 443.

The first connection portion 441 is a portion that is joined to the source electrode 32 of the semiconductor element 30. The conductor principal surface 444s of the conductor portion 444 that constitutes the first connection portion 441 is covered by the principal surface side solder layer 445s, the conductor back surface 444r of the conductor portion 444 that constitutes the first connection portion 441 is covered by the back surface side solder layer 445r, and the conductor side surface (not shown) of the conductor portion 444 that constitutes the first connection portion 441 is covered by the side surface side solder layer (not shown). In this embodiment, in a cross-sectional view of the first connection portion 441, the principal surface side solder layer 445s is in contact with the conductor principal surface 444s, and the back surface side solder layer 445r is in contact with the conductor back surface 444r. In addition, the side surface side solder layer is in contact with the conductor side surface of the conductor portion 444. That is, the connection surface 441a of the first connection portion 441 that contacts the source electrode 32 of the semiconductor element 30 is made of the solder layer 445 (rear side solder layer 445r). The end face of the first connection portion 441 is a surface where the end face 444a of the conductor portion 444 is not covered by the solder layer 445, that is, the end face 444a is exposed.

The second connection portion 442 is a portion joined to the main surface 422s of the terminal portion 422 of the drive terminal portion 420A. Therefore, the terminal portion 422 corresponds to the driving conductor, and the main surface 422s corresponds to the driving connection surface. The conductor main surface 444s of the conductor portion 444 constituting the second connection portion 442 is covered by the main surface side solder layer 445s, the conductor back surface 444r of the conductor portion 444 constituting the second connection portion 442 is covered by the back surface side solder layer 445r, and the conductor side surface (not shown) of the conductor portion 444 constituting the second connection portion 442 is covered by the side surface side solder layer (not shown). In this embodiment, in a cross-sectional view of the second connection portion 442, the main surface side solder layer 445s is in contact with the conductor main surface 444s, and the back surface side solder layer 445r is in contact with the conductor back surface 444r. In addition, the side solder layer is in contact with the conductor side surface of the conductor portion 444. In other words, the connection surface 442a in the second connection portion 442 that contacts the main surface 422s of the terminal portion 422 is made of the solder layer 445 (rear surface solder layer 445r).

The connecting portion 443 is a portion that connects the first connecting portion 441 and the second connecting portion 442. When viewed from the second direction y, the connecting portion 443 is formed in a mountain shape, similar to the connecting portion 43 of the first embodiment. The conductor main surface 444s of the conductor portion 444 that constitutes the connecting portion 443 is covered by the main surface side solder layer 445s, the conductor back surface 444r of the conductor portion 444 that constitutes the connecting portion 443 is covered by the back surface side solder layer 445r, and the conductor side surface (not shown) of the conductor portion 444 that constitutes the connecting portion 443 is covered by the side surface side solder layer (not shown). In this embodiment, in a cross-sectional view of the connecting portion 443, the main surface side solder layer 445s is in contact with the conductor main surface 444s, and the back surface side solder layer 445r is in contact with the conductor back surface 444r. In addition, the side surface side solder layer is in contact with the conductor side surface of the conductor portion 444.

The drive connection member 440 is configured as a single part in which the first connection portion 441, the second connection portion 442, and the coupling portion 443 are integrally formed, for example. The first connection portion 441 is provided with a recess 446. The recess 446 corresponds to the recess 46 of the first embodiment. The second connection portion 442 is provided with a recess 447 and an extension portion 448. The recess 447 and the extension portion 448 correspond to the recess 47 and the extension portion 48 of the first embodiment. The end face of the extension portion 448 is a surface where the end face 444b of the conductor portion 444 is not covered by the solder layer 445, i.e., the end face 444b is exposed.

The rear side solder layer 445r in the first connection portion 441 is bonded to the source electrode 32, and the rear side solder layer 445r in the second connection portion 442 is bonded to the pad portion 421. The bonding method between the drive connection member 440 and the source electrode 32 and the pad portion 421 is the same as the bonding method between the first drive connection member 40A and the source electrode 32 and the second mounting layer 14A in the first embodiment.

- In the first to third embodiments, the shape of each of the drive connection members 40A, 40B as viewed from a direction perpendicular to the thickness direction z can be changed as desired. In one example, as shown in FIG. 73, the joint portion 43 of the first drive connection member 40A may be formed horizontally instead of in a mountain shape. In FIG. 73, a pedestal 600 for aligning the height of the source electrode 32 of the first semiconductor element 30A in the thickness direction z is provided, for example, on the second mounting layer 14A. The pedestal 600 is made of a metal such as Cu or a Cu alloy, and is joined to the second mounting layer 14A by a conductive bonding material. The second drive connection member 40B can also be changed to the first drive connection member 40A in FIG. 73.

- In each embodiment, the drive connection members 40A, 40B, 260, 270 have the extensions 48, 268, 278 formed on the second connection parts 42, 262, 272, but are not limited to this. For example, as shown in FIG. 74, the first drive connection member 40A may have the extensions 48 formed on the first connection part 41. In this case, the bonding device 800 bonds the sheet 840 to the second mounting layer 14A and the source electrode 32 of the first semiconductor element 30A in this order, and then cuts the sheet 840. Note that the drive connection members 40B, 260, 270 can also be modified to the first drive connection member 40A in FIG. 74. In addition, in the third embodiment, the drive connection members 40A, 40B may have the extensions 48 formed on the third connection part 49.

In each embodiment, the configuration of the conductor portion 44, 264, 274 and the solder layer 45, 265, 275 of each drive connection member 40A, 40B, 260, 270 can be changed arbitrarily. In the conductor portion 44, 264, 274, the solder layer 45, 265, 275 may be provided on the surface facing the target component to be joined, such as a semiconductor element or a mounting layer (conductive layer). In one example, as shown in FIG. 75, the first drive connection member 40A has a back side solder layer 45r provided on the conductor back surface 44r of the conductor portion 44 as the solder layer 45, and the main surface side solder layer 45s and the side surface side solder layer 45a are not provided on the conductor main surface 44s and the conductor side surface 44a, respectively. That is, the conductor main surface 44s and the conductor side surface 44a of the conductor portion 44 are exposed. In addition, each drive connection member 40B, 260, 270 can be modified in the same way as the first drive connection member 40A in FIG. 75.

In one example, as shown in FIG. 76, the first drive connection member 40A has a backside solder layer 45r provided only on the portion of the conductor backside 44r of the conductor portion 44 that is bonded to the source electrode 32 of the first semiconductor element 30A and the portion that is bonded to the second mounting layer 14A. Note that each drive connection member 40B, 260, 270 can also be modified in the same way as each drive connection member 40A in FIG. 76.

- In each embodiment, the number of recesses 46, 266, 267 provided in the first connection portion 41, 261, 271 of each drive connection member 40A, 40B, 260, 270 can be changed as desired. In one example, as shown in FIG. 77, multiple recesses 46 are provided in the first connection portion 41 of the first drive connection member 40A. The multiple recesses 46 are provided spaced apart from each other in the second direction y. Note that the first connection portions 41, 261, 271 of each drive connection member 40A can also be changed in the same way as the first drive connection member 40A in FIG. 77.

In addition, in FIG. 77, the multiple recesses 46 are spaced apart from one another in the second direction y, but this is not limited thereto, and the multiple recesses 46 may be spaced apart from one another in the first direction x, or may be spaced apart from one another in both the first direction x and the second direction y. When the multiple recesses 46 are spaced apart from one another in both the first direction x and the second direction y, the multiple recesses 46 are arranged in a lattice pattern when viewed from the thickness direction z.

The number of recesses 47, 267, 277 provided in the second connection portion 42, 262, 272 of each drive connection member 40A, 40B, 260, 270 can be changed arbitrarily, similar to the recesses 46, 266, 276 of the first connection portion 41, 261, 271. In the third embodiment, the number of recesses 49A provided in the third connection portion 49 of each drive connection member 40A, 40B can be changed arbitrarily, similar to the recesses 46, 266, 276 of the first connection portion 41, 261, 271. A plurality of recesses 46, 266, 276 may be provided in the first connection portion 41, 261, 271, and a plurality of recesses 47, 267, 277 may be provided in the second connection portion 42, 262, 272.

In each embodiment, the bonding method of each of the drive connection members 40A, 40B, 260, and 270 can be changed arbitrarily. In one example, as shown in FIG. 78, the first connection portion 41 of the first drive connection member 40A is bonded to the source electrode 32 of the first semiconductor element 30A by laser processing (laser welding). The first connection portion 41 has a laser bonded portion 41X formed therein. The number of the laser bonded portions 41X can be changed arbitrarily. In FIG. 78, three laser bonded portions 41X are formed in the first connection portion 41. In FIG. 78, the first connection portion 41 is shown, but the second connection portion 42 of the first drive connection member 40A may also be bonded to the second mounting layer 14A by laser welding in the same manner as the first connection portion 41 in FIG. 78. In addition, the third connection portion 49 of the first drive connection member 40A of the third embodiment may also be bonded to the anode electrode 102 of the diode 100A by laser welding in the same manner as the first connection portion 41 in FIG. 78. The drive connecting members 40B, 260, 270 can also be modified in the same manner as the first drive connecting member 40A in FIG.
<Additional Notes>
[Appendix 1]
a semiconductor element having a main surface on which a driving electrode is formed;
a driving conductor having a driving connection surface facing in the same direction as the main surface of the element;
a drive connection member that connects the drive electrode and the drive conductor;
the drive connection member has a first connection portion connected to the drive electrode and a second connection portion connected to the drive conductor,
the first connection portion has a first connection surface in contact with the drive electrode;
The first connection surface is constituted by a solder layer.
Semiconductor device.
[Appendix 2]
The drive connection member is made of a metal sheet that is strip-shaped when viewed in a direction perpendicular to the main surface of the element.
2. The semiconductor device according to claim 1.
[Appendix 3]
If the direction perpendicular to the main surface of the element is defined as the thickness direction,
In a cross-sectional view of the first connection portion taken along a plane along an extension direction and a thickness direction of the first connection portion, the first connection portion has a sheet-like conductor portion and the solder layer in contact with at least a surface of the conductor portion facing the drive electrode.
3. The semiconductor device according to claim 1 or 2.
[Appendix 4]
In the cross-sectional view of the first connection portion, the solder layer includes a main surface side solder layer in contact with a main surface of the conductor portion facing the same direction as the element main surface, and a back surface side solder layer in contact with a back surface of the conductor portion facing the drive electrode.
4. The semiconductor device according to claim 3.
[Appendix 5]
the solder layer includes a side surface side solder layer in contact with a side surface of the conductor portion,
The side surface solder layer connects the main surface solder layer and the back surface solder layer in the thickness direction.
5. The semiconductor device according to claim 4.
[Appendix 6]
The conductor portion is made of Cu.
6. The semiconductor device according to claim 3,
[Appendix 7]
The conductor portion is exposed to the outside of the drive connection member at an end face of the first connection portion in the extending direction of the first connection portion.
7. The semiconductor device according to claim 3,
[Appendix 8]
If the direction perpendicular to the main surface of the element is defined as the thickness direction,
A portion of the first connection portion opposite to the element main surface side in the thickness direction has a recess recessed toward the first connection surface.
8. The semiconductor device according to claim 1,
[Appendix 9]
The first connection portion has a plurality of recesses spaced apart from each other in at least one of a direction in which the first connection portion extends and a direction perpendicular to the direction in which the first connection portion extends as viewed from a direction perpendicular to the element main surface.
9. The semiconductor device according to claim 8.
[Appendix 10]
the second connection portion has a second connection surface in contact with the drive connection surface;
The second connection surface is constituted by a solder layer.
10. The semiconductor device according to claim 1,
[Appendix 11]
If the direction perpendicular to the main surface of the element is defined as the thickness direction,
In a cross-sectional view of the second connection portion taken along a plane along an extension direction and a thickness direction of the second connection portion, the second connection portion has a sheet-like conductor portion and the solder layer in contact with at least a surface of the conductor portion facing the driving conductor.
11. The semiconductor device according to claim 10.
[Appendix 12]
In the cross-sectional view of the second connection portion, the solder layer includes a main surface side solder layer in contact with a main surface of the conductor portion facing the same direction as the element main surface, and a back surface side solder layer in contact with a back surface of the conductor portion facing the driving conductor.
12. The semiconductor device according to claim 11.
[Appendix 13]
the solder layer includes a side surface side solder layer in contact with a side surface of the conductor portion,
The side surface solder layer connects the main surface solder layer and the back surface solder layer in the thickness direction.
13. The semiconductor device according to claim 12.
[Appendix 14]
The conductor portion is exposed to the outside of the drive connection member at an end face of the second connection portion in the extending direction of the second connection portion.
14. The semiconductor device according to any one of claims 11 to 13.
[Appendix 15]
If the direction perpendicular to the main surface of the element is defined as the thickness direction,
A portion of the second connection portion opposite to the driving connection surface in the thickness direction has a recess that is recessed toward the driving connection surface.
15. The semiconductor device according to any one of claims 10 to 14.
[Appendix 16]
The second connection portion has a plurality of recesses spaced apart from each other in at least one of a direction in which the second connection portion extends and a direction perpendicular to the direction in which the second connection portion extends as viewed from a direction perpendicular to the element main surface.
16. The semiconductor device according to claim 15.
[Appendix 17]
If the direction perpendicular to the main surface of the element is defined as the thickness direction,
The second connection portion has an extension portion that extends away from the driving connection surface in the thickness direction as it moves away from the first connection portion in the extending direction of the second connection portion.
17. The semiconductor device according to any one of claims 10 to 16.
[Appendix 18]
The driving connection member has a connecting portion that connects the first connecting portion and the second connecting portion.
18. The semiconductor device according to any one of claims 1 to 17.
[Appendix 19]
The drive connection member is configured as a single component in which the first connection portion, the second connection portion, and the coupling portion are integrally formed.
19. The semiconductor device of claim 18.
[Appendix 20]
The driving connection member has a surface formed of the solder layer other than an end face of the driving connection member in an extending direction of the driving connection member.
20. The semiconductor device according to any one of claims 1 to 19.
[Appendix 21]
the semiconductor device includes a second element different from the semiconductor element as a first element,
the second element has a main surface on which a driving electrode is formed, the main surface facing in the same direction as the main surface of the semiconductor element;
The drive connection member has a third connection portion that is connected to a drive electrode of the second element.
18. The semiconductor device according to any one of claims 1 to 17.
[Appendix 22]
the third connection portion has a third connection surface in contact with a drive electrode of the second element;
The third connection surface is constituted by a solder layer.
22. The semiconductor device of claim 21.
[Appendix 23]
If the direction perpendicular to the main surface of the second element is defined as the thickness direction,
In a cross-sectional view of the third connection portion taken along a plane along an extension direction and a thickness direction of the third connection portion, the third connection portion has a sheet-like conductor portion and the solder layer in contact with at least a surface of the conductor portion facing a driving electrode of the second element.
23. The semiconductor device of claim 22.
[Appendix 24]
In the cross-sectional view of the third connection portion, the solder layer includes a main surface side solder layer in contact with a main surface of the conductor portion facing the same direction as the main surface of the element, and a back surface side solder layer in contact with a back surface of the conductor portion facing a drive electrode of the second element.
24. The semiconductor device of claim 23.
[Appendix 25]
the solder layer includes a side surface side solder layer in contact with a side surface of the conductor portion,
The side surface solder layer connects the main surface solder layer and the back surface solder layer in the thickness direction.
25. The semiconductor device of claim 24.
[Appendix 26]
The conductor portion is exposed to the outside of the drive connection member at an end face of the third connection portion in the extending direction of the third connection portion.
26. The semiconductor device according to any one of appendixes 23 to 25.
[Appendix 27]
If the direction perpendicular to the main surface of the second element is defined as the thickness direction,
A portion of the third connection portion opposite to the third connection surface side in the thickness direction has a recess recessed toward the third connection surface.
27. The semiconductor device according to any one of appendices 23 to 26.
[Appendix 28]
The third connection portion has a plurality of recesses spaced apart from each other in at least one of a direction in which the third connection portion extends and a direction orthogonal to the direction in which the third connection portion extends as viewed from a direction perpendicular to a main surface of the second element.
28. The semiconductor device of claim 27.
[Appendix 29]
The drive connection member has a first coupling portion that couples the first connection portion and the third connection portion, and a second coupling portion that couples the first connection portion and the second connection portion.
29. The semiconductor device according to any one of claims 21 to 28.
[Appendix 30]
The drive connection member is configured as a single component in which the first connection portion, the second connection portion, the third connection portion, the first coupling portion, and the second coupling portion are integrally formed.
30. The semiconductor device of claim 29.
[Appendix 31]
The driving connection member has a surface formed of the solder layer other than an end face of the driving connection member in an extending direction of the driving connection member.
31. The semiconductor device according to any one of claims 21 to 30.
[Appendix 32]
the semiconductor element is a transistor,
The second element is a diode connected in anti-parallel to the transistor.
32. The semiconductor device according to any one of claims 21 to 31.
[Appendix 33]
The semiconductor device includes a first semiconductor device and a second semiconductor device connected in series with each other,
The drive connection members include a first drive connection member connected to a drive electrode of the first semiconductor element, and a second drive connection member connected to a drive electrode of the second semiconductor element.
33. The semiconductor device according to any one of appendixes 1 to 32.
[Appendix 34]
the first semiconductor element is made up of a plurality of first semiconductor elements connected in parallel to each other,
the second semiconductor element is composed of a plurality of second semiconductor elements connected in parallel to each other,
a plurality of the first drive connection members are provided so as to be connected to the drive electrodes of the plurality of first semiconductor elements, respectively;
The second drive connection members are provided in plurality so as to be connected to the drive electrodes of the second semiconductor elements, respectively.
34. The semiconductor device of claim 33.
[Appendix 35]
The semiconductor device includes:
a conductive first mounting layer on which the first semiconductor element is mounted;
a conductive second mounting layer disposed adjacent to the first mounting layer and on which the second semiconductor element is mounted;
a conductive layer disposed adjacent to the second mounting layer;
the first drive connection member connects a drive electrode of the first semiconductor element and the second mounting layer,
The second drive connection member connects a drive electrode of the second semiconductor element and the conductive layer.
35. The semiconductor device according to claim 33 or 34.
[Appendix 36]
each of the first semiconductor element and the second semiconductor element is a transistor;
The semiconductor device includes:
a first diode connected in anti-parallel to the first semiconductor element;
a second diode connected in anti-parallel to the second semiconductor element,
the first diode and the second diode each face the same side as the element principal surfaces of the first semiconductor element and the second semiconductor element, and each have an element principal surface on which a driving electrode is formed;
the first drive connection member connects a drive electrode of the first semiconductor element, a drive electrode of the first diode, and the second mounting layer;
The second drive connection member connects a drive electrode of the second semiconductor element, a drive electrode of the second diode, and the conductive layer.
36. The semiconductor device of claim 35.
[Appendix 37]
The semiconductor device includes:
a conductive substrate including a first wiring layer, a second wiring layer, and an insulating layer, the first wiring layer and the second wiring layer being stacked with the insulating layer sandwiched therebetween;
a first metal member that is inserted into a through hole provided in the conductive substrate and on which the first semiconductor element is mounted;
a second metal member that is inserted into a through hole provided in the conductive substrate and is disposed apart from the first metal member, and on which the second semiconductor element is mounted;
Equipped
35. The semiconductor device according to claim 33 or 34.
[Appendix 38]
The semiconductor device includes:
a conductive substrate including a first wiring layer, a second wiring layer, and an insulating layer, the first wiring layer and the second wiring layer being stacked with the insulating layer sandwiched therebetween;
a first metal member and a second metal member supporting the conductive substrate;
Equipped with
the first metal member and the second metal member are disposed apart from each other and are electrically insulated from each other;
the conductive substrate is provided with a first opening and a second opening penetrating the conductive substrate in a thickness direction of the conductive substrate,
the first semiconductor element is disposed in the first opening so as to be electrically connected to the first metal member;
The second semiconductor element is disposed in the second opening so as to be electrically connected to the second metal member.
35. The semiconductor device according to claim 33 or 34.
[Appendix 39]
the first wiring layer includes a first power terminal and an output terminal;
the second wiring layer includes a second power terminal;
the first drive connection member electrically connects a drive electrode of the first semiconductor element and the output terminal;
The second drive connection member electrically connects a drive electrode of the second semiconductor element and the second power terminal.
39. The semiconductor device according to claim 37 or 38.
[Appendix 40]
The semiconductor device is a SiC MOSFET.
40. The semiconductor device according to any one of claims 1 to 39.
[Appendix 41]
The drive connection member is connected to a source electrode serving as the drive electrode of the semiconductor element.
41. The semiconductor device of claim 40.
[Appendix 42]
A sealing resin is provided to seal the semiconductor element.
42. The semiconductor device according to any one of claims 1 to 41.
[Appendix 43]
a semiconductor element having a main surface on which a driving electrode is formed;
a driving conductor having a driving connection surface facing in the same direction as the main surface of the element;
a driving connection member that connects the driving electrode and the driving conductor, the driving connection member having a first connection portion that connects to the driving electrode and a second connection portion that connects to the driving conductor,
a surface of the first connection portion that contacts the driving electrode and a surface of the second connection portion that contacts the driving conductor are each made of a solder layer;
an electrode joining step of melting the solder layer of the first connection portion to join the first connection portion and the drive electrode;
a conductor joining step of melting the solder layer of the second connection portion to join the second connection portion and the driving conductor.
A method for manufacturing a semiconductor device.
[Appendix 44]
The drive connection member is formed of a flexible sheet having a surface in contact with the drive electrode and a surface in contact with the drive connection surface, the surface being made of at least a solder layer.
44. A method for manufacturing a semiconductor device according to claim 43.
[Appendix 45]
a cutting step of cutting the driving connection member drawn out on a side opposite to the second connection part with respect to the first connection part, or the driving connection member drawn out on a side opposite to the first connection part with respect to the second connection part.
45. A method for manufacturing a semiconductor device according to claim 43 or 44.
[Appendix 46]
The drive connection member is composed of a sheet-like conductor portion and a solder layer in contact with the surface of the conductor portion, and is formed by immersing the conductor portion in a tank containing solder.
46. A method for manufacturing a semiconductor device according to any one of appendices 43 to 45.
[Appendix 47]
In the electrode bonding step, the first connection portion is pressed against the driving electrode using a heated tool, thereby bonding the first connection portion and the driving electrode.
47. A method for manufacturing a semiconductor device according to any one of claims 43 to 46.
[Appendix 48]
In the electrode bonding step, the first connection portion and the driving electrode are bonded by laser processing.
47. A method for manufacturing a semiconductor device according to any one of claims 43 to 46.
[Appendix 49]
In the conductor joining step, the second connection portion is pressed against the driving conductor using a heated tool, thereby joining the second connection portion and the driving conductor.
A method for manufacturing a semiconductor device according to any one of appendices 43 to 48.
[Appendix 50]
In the conductor joining step, the second connection portion and the driving conductor are joined by laser processing.
A method for manufacturing a semiconductor device according to any one of appendices 43 to 48.

1A to 1F: Semiconductor device 13A, 13B: First mounting layer 14A, 14B, 14C, 14D, 14E: Second mounting layer 14s: Main mounting surface (drive connection surface)
15A, 15B...conductive layers 15s...conductive main surface (drive connection surface)
30...Semiconductor element (first element)
30A: First semiconductor element (semiconductor element)
30B: Second semiconductor element (semiconductor element)
30s: element main surface 32: source electrode (drive electrode)
32A...Main source electrode (drive electrode)
40A: First drive connection member (drive connection member)
40B: Second drive connection member (drive connection member)
40C...Third drive connecting member (drive connecting member)
41...First connection portion 41a...Connection surface (first connection surface)
42... Second connection portion 42a... Connection surface (second connection surface)
43: Connection portion 43A: First connection portion 43B: Second connection portion 44: Conductor portion 44a: Conductor side surface (side surface of conductor portion)
44s: Conductor main surface (main surface of the conductor portion)
44r: Back surface of conductor (back surface of conductor part)
45: solder layer 45s: main surface side solder layer 45r: rear surface side solder layer 45a: side surface side solder layer 46: recess 47: recess 48: extension portion 49: third connection portion 49A: recess 49a: connection surface (third connection surface)
52A, 52B... output terminals 60, 210, 360, 450... sealing resin 100A... diode (first diode, second element)
100B...Diode (second diode, second element)
100s...Diode main surface (main surface of the second element)
102...anode electrode (driving electrode for the second element)
222...input lead (driving conductor)
222cs...Main surface (drive connection surface)
230: Semiconductor element 230U: First semiconductor element 230L: Second semiconductor element 231: Element main surface 233: Source electrode (drive electrode)
242B: Conductive member 242sb: Main surface (drive connection surface)
260: First drive connection member 261: First connection portion 262: Second connection portion 263: Coupling portion 264: Conductor portion 264s: Conductor main surface (main surface of the conductor portion)
264r: Back surface of conductor (back surface of conductor part)
265: Solder layer 265s: Main surface side solder layer 265r: Back surface side solder layer 266, 267: Recess 268: Extension 270: Second drive connection member 271: First connection 272: Second connection 273: Coupling 274: Conductor 274s: Conductor main surface (main surface of conductor portion)
274r: Back surface of conductor (back surface of conductor part)
275: solder layer; 275s: main surface solder layer; 275r: rear surface solder layer; 276, 277: recess; 278: extension; 300: conductive substrate; 301: wiring layer (first wiring layer);
302...wiring layer (second wiring layer)
304...insulating layer 306A...through hole (multiple openings, first opening)
306B...through holes (multiple openings, second openings)
310A, 310B... through holes 321... metal member (first metal member)
322...metal member (second metal member)
351A: First power terminal 351B: Second power terminal 352: Output terminal 391: Metal member (first metal member)
392...metal member (second metal member)
440: Driving connection member 441: First connection portion 442: Second connection portion 443: Coupling portion 444: Conductor portion 444s: Conductor main surface (main surface of the conductor portion)
444r: Back surface of conductor (back surface of conductor part)
445: solder layer 445s: main surface side solder layer 445r: rear surface side solder layer 446, 447: recess 448: extension 840: sheet 844: conductor 845: solder layer z: thickness direction (direction perpendicular to the element main surface)

Claims (49)

a semiconductor element having a main surface on which a driving electrode is formed;
a driving conductor having a driving connection surface facing in the same direction as the main surface of the element;
a driving connection member that connects the driving electrode and the driving conductor;
Equipped with
the drive connection member has a first connection portion connected to the drive electrode and a second connection portion connected to the drive conductor,
the first connection portion has a first connection surface in contact with the drive electrode ;
The driving connection member has a surface formed of the solder layer other than an end face of the driving connection member in an extending direction of the driving connection member.
Semiconductor device. the semiconductor device includes a second element different from the semiconductor element as a first element,
the second element has a main surface on which a driving electrode is formed, the main surface facing in the same direction as the main surface of the semiconductor element;
The semiconductor device according to claim 1 , wherein the drive connection member has a third connection portion that is connected to a drive electrode of the second element. a semiconductor element having a main surface on which a driving electrode is formed;
a driving conductor having a driving connection surface facing in the same direction as the main surface of the element;
a driving connection member that connects the driving electrode and the driving conductor;
Equipped with
the drive connection member has a first connection portion connected to the drive electrode and a second connection portion connected to the drive conductor,
the first connection portion has a first connection surface in contact with the drive electrode;
the first connection surface is constituted by a solder layer ;
the second connection portion has a second connection surface in contact with the drive connection surface;
the second connection surface is constituted by a solder layer;
If the direction perpendicular to the main surface of the element is defined as the thickness direction,
The second connection portion has an extension portion that extends away from the driving connection surface in the thickness direction as it moves away from the first connection portion in the extending direction of the second connection portion.
Semiconductor device. The semiconductor device includes a first semiconductor device and a second semiconductor device connected in series with each other,
The semiconductor device according to claim 3 , wherein the drive connection member includes a first drive connection member connected to a drive electrode of the first semiconductor element, and a second drive connection member connected to a drive electrode of the second semiconductor element. the first semiconductor element is made up of a plurality of first semiconductor elements connected in parallel to each other,
the second semiconductor element is composed of a plurality of second semiconductor elements connected in parallel to each other,
a plurality of the first drive connection members are provided so as to be connected to the drive electrodes of the plurality of first semiconductor elements, respectively;
The semiconductor device according to claim 4 , wherein the second drive connection members are provided in a plurality so as to be connected to the drive electrodes of the second semiconductor elements, respectively. The semiconductor device includes:
a conductive first mounting layer on which the first semiconductor element is mounted;
a conductive second mounting layer disposed adjacent to the first mounting layer and on which the second semiconductor element is mounted;
a conductive layer disposed adjacent to the second mounting layer;
Equipped with
the first drive connection member connects a drive electrode of the first semiconductor element and the second mounting layer,
The semiconductor device according to claim 4 , wherein the second drive connection member connects a drive electrode of the second semiconductor element and the conductive layer. each of the first semiconductor element and the second semiconductor element is a transistor;
The semiconductor device includes:
a first diode connected in anti-parallel to the first semiconductor element;
a second diode connected in anti-parallel to the second semiconductor element;
Equipped with
the first diode and the second diode each face the same side as the element principal surfaces of the first semiconductor element and the second semiconductor element, and each have an element principal surface on which a driving electrode is formed;
the first drive connection member connects a drive electrode of the first semiconductor element, a drive electrode of the first diode, and the second mounting layer;
The semiconductor device according to claim 6 , wherein the second drive connection member connects a drive electrode of the second semiconductor element, a drive electrode of the second diode, and the conductive layer. a semiconductor element having a main surface on which a driving electrode is formed;
a driving conductor having a driving connection surface facing in the same direction as the main surface of the element;
a driving connection member that connects the driving electrode and the driving conductor;
A semiconductor device comprising:
the drive connection member has a first connection portion connected to the drive electrode and a second connection portion connected to the drive conductor,
the first connection portion has a first connection surface in contact with the drive electrode;
the first connection surface is constituted by a solder layer ;
The semiconductor device includes a first semiconductor device and a second semiconductor device connected in series with each other,
the drive connection member includes a first drive connection member connected to a drive electrode of the first semiconductor element and a second drive connection member connected to a drive electrode of the second semiconductor element,
The semiconductor device includes:
a conductive substrate including a first wiring layer, a second wiring layer, and an insulating layer, the first wiring layer and the second wiring layer being stacked with the insulating layer sandwiched therebetween;
a first metal member that is inserted into a through hole provided in the conductive substrate and on which the first semiconductor element is mounted;
a second metal member that is inserted into a through hole provided in the conductive substrate and is disposed apart from the first metal member, and on which the second semiconductor element is mounted.
Semiconductor device. a semiconductor element having a main surface on which a driving electrode is formed;
a driving conductor having a driving connection surface facing in the same direction as the main surface of the element;
a driving connection member that connects the driving electrode and the driving conductor;
A semiconductor device comprising:
the drive connection member has a first connection portion connected to the drive electrode and a second connection portion connected to the drive conductor,
the first connection portion has a first connection surface in contact with the drive electrode;
the first connection surface is constituted by a solder layer ;
The semiconductor device includes a first semiconductor device and a second semiconductor device connected in series with each other,
the drive connection member includes a first drive connection member connected to a drive electrode of the first semiconductor element and a second drive connection member connected to a drive electrode of the second semiconductor element,
The semiconductor device includes:
a conductive substrate including a first wiring layer, a second wiring layer, and an insulating layer, the first wiring layer and the second wiring layer being stacked with the insulating layer sandwiched therebetween;
a first metal member and a second metal member supporting the conductive substrate;
Equipped with
the first metal member and the second metal member are disposed apart from each other and are electrically insulated from each other,
the conductive substrate is provided with a first opening and a second opening penetrating the conductive substrate in a thickness direction of the conductive substrate,
the first semiconductor element is disposed in the first opening so as to be electrically connected to the first metal member;
The second semiconductor element is disposed in the second opening so as to be electrically connected to the second metal member.
Semiconductor device. the second connection portion has a second connection surface in contact with the drive connection surface;
The semiconductor device according to claim 8 , wherein the second connection surface is formed of a solder layer. the first wiring layer includes a first power terminal and an output terminal;
the second wiring layer includes a second power terminal;
the first drive connection member electrically connects a drive electrode of the first semiconductor element and the output terminal;
The semiconductor device according to claim 8 , wherein the second drive connection member electrically connects a drive electrode of the second semiconductor element and the second power terminal. If the direction perpendicular to the main surface of the element is defined as the thickness direction,
The semiconductor device according to any one of claims 3 to 11, wherein in a cross-sectional view of the first connection portion cut by a plane along the extension direction and the thickness direction of the first connection portion, the first connection portion has a sheet-like conductor portion and the solder layer in contact with at least a surface of the conductor portion that faces the drive electrode. 13. The semiconductor device according to claim 12, wherein, in the cross-sectional view of the first connection portion, the solder layer includes a main surface side solder layer in contact with a main surface of the conductor portion facing the same direction as the element main surface, and a back surface side solder layer in contact with a back surface of the conductor portion facing the drive electrode. the solder layer includes a side surface side solder layer in contact with a side surface of the conductor portion,
The semiconductor device according to claim 13 , wherein the side surface solder layer connects the main surface solder layer and the back surface solder layer in the thickness direction. The semiconductor device according to claim 12 , wherein the conductor portion is exposed to the outside of the drive connection member at an end face of the first connection portion in a direction in which the first connection portion extends. If the direction perpendicular to the main surface of the element is defined as the thickness direction,
The semiconductor device according to any one of claims 3 to 15, wherein in a cross-sectional view of the second connection portion cut by a plane along the extension direction and the thickness direction of the second connection portion, the second connection portion has a sheet-like conductor portion and the solder layer in contact with at least a surface of the conductor portion that faces the driving conductor. 17. The semiconductor device according to claim 16, wherein, in the cross-sectional view of the second connection portion, the solder layer includes a main surface side solder layer in contact with a main surface of the conductor portion facing the same direction as the element main surface, and a back surface side solder layer in contact with a back surface of the conductor portion facing the driving conductor. the solder layer includes a side surface side solder layer in contact with a side surface of the conductor portion,
The semiconductor device according to claim 17 , wherein the side surface solder layer connects the main surface solder layer and the back surface solder layer in the thickness direction. The semiconductor device according to claim 16 , wherein the conductor portion is exposed to the outside of the drive connection member at an end face of the second connection portion in a direction in which the second connection portion extends. The semiconductor device according to claim 3 , wherein the driving connection member has a coupling portion that couples the first coupling portion and the second coupling portion together. The semiconductor device according to claim 20 , wherein the drive connection member is configured as a single component in which the first connection portion, the second connection portion, and the coupling portion are integrally formed. 22. The semiconductor device according to claim 3 , wherein the surface of the drive connection member other than the end faces of the drive connection member in the extending direction of the drive connection member is constituted by the solder layer. the semiconductor device includes a second element different from the semiconductor element as a first element,
the second element has a main surface on which a driving electrode is formed, the main surface facing in the same direction as the main surface of the semiconductor element;
The semiconductor device according to claim 3 , wherein the drive connection member has a third connection portion that is connected to a drive electrode of the second element. the third connection portion has a third connection surface in contact with a drive electrode of the second element;
24. The semiconductor device according to claim 23 , wherein the third connection surface is constituted by a solder layer. If the direction perpendicular to the main surface of the second element is defined as the thickness direction,
25. The semiconductor device according to claim 24, wherein in a cross-sectional view of the third connection portion cut by a plane along the extension direction and the thickness direction of the third connection portion, the third connection portion has a sheet-shaped conductor portion and the solder layer in contact with at least a surface of the conductor portion that faces the driving electrode of the second element. 26. The semiconductor device according to claim 25, wherein, in the cross-sectional view of the third connection portion, the solder layer includes a main surface side solder layer in contact with a main surface of the conductor portion facing the same direction as the main surface of the element, and a back surface side solder layer in contact with a back surface of the conductor portion that faces a drive electrode of the second element. the solder layer includes a side surface side solder layer in contact with a side surface of the conductor portion,
The semiconductor device according to claim 26 , wherein the side surface solder layer connects the main surface solder layer and the back surface solder layer in the thickness direction. 28. The semiconductor device according to claim 25 , wherein the conductor portion is exposed to the outside of the drive connection member at an end face of the third connection portion in a direction in which the third connection portion extends. If the direction perpendicular to the main surface of the second element is defined as the thickness direction,
The semiconductor device according to claim 25 , wherein a portion of the third connection portion opposite the third connection surface in the thickness direction has a recess that is recessed toward the third connection surface. 30. The semiconductor device according to claim 29, wherein the third connection portion has a plurality of recesses spaced apart from each other in at least one of a direction in which the third connection portion extends and a direction perpendicular to the direction in which the third connection portion extends when viewed from a direction perpendicular to a main surface of the second element. The semiconductor device according to any one of claims 23 to 30, wherein the drive connection member has a first connecting portion that connects the first connection portion and the third connection portion, and a second connecting portion that connects the first connection portion and the second connection portion. The semiconductor device according to claim 31 , wherein the drive connection member is configured as a single component in which the first connection portion, the second connection portion, the third connection portion, the first coupling portion, and the second coupling portion are integrally formed. 33. The semiconductor device according to claim 23, wherein the surface of the drive connection member other than the end faces of the drive connection member in the extending direction of the drive connection member is constituted by the solder layer. the semiconductor element is a transistor,
The semiconductor device according to claim 23 , wherein the second element is a diode connected in anti-parallel to the transistor. The semiconductor device according to any one of claims 1 to 34 , wherein the drive connection member is made of a metal sheet that is in a band shape when viewed in a direction perpendicular to the main surface of the element. If the direction perpendicular to the main surface of the element is defined as the thickness direction,
The semiconductor device according to claim 1 , wherein a portion of the first connection portion opposite the element main surface side in the thickness direction has a recess that is recessed toward the first connection surface. 37. The semiconductor device according to claim 36, wherein the first connection portion has a plurality of recesses spaced apart from each other in at least one of a direction in which the first connection portion extends and a direction perpendicular to the direction in which the first connection portion extends as viewed from a direction perpendicular to the element main surface. If the direction perpendicular to the main surface of the element is defined as the thickness direction,
The semiconductor device according to claim 1 , wherein a portion of the second connection portion opposite the driving connection surface in the thickness direction has a recess that is recessed toward the driving connection surface. 39. The semiconductor device according to claim 38, wherein the second connection portion has a plurality of recesses spaced apart from each other in at least one of a direction in which the second connection portion extends and a direction perpendicular to the direction in which the second connection portion extends as viewed from a direction perpendicular to the element main surface. The semiconductor device according to any one of claims 1 to 39, wherein the semiconductor element is a SiC MOSFET. The semiconductor device according to claim 40 , wherein the drive connection member is connected to a source electrode serving as the drive electrode of the semiconductor element. The semiconductor device according to any one of claims 1 to 41, further comprising a sealing resin that seals the semiconductor element. a semiconductor element having a main surface on which a driving electrode is formed;
a driving conductor having a driving connection surface facing in the same direction as the main surface of the element;
a driving connection member that connects the driving electrode and the driving conductor, the driving connection member having a first connection portion that connects to the driving electrode and a second connection portion that connects to the driving conductor,
a surface of the first connection portion that contacts the driving electrode and a surface of the second connection portion that contacts the driving conductor are each made of a solder layer;
an electrode joining step of melting the solder layer of the first connection portion to join the first connection portion and the drive electrode;
a conductor joining step of melting the solder layer of the second connection portion to join the second connection portion and the driving conductor;
a cutting step of cutting the driving connection member that is drawn out to the side opposite the second connection portion with respect to the first connection portion, or the driving connection member that is drawn out to the side opposite the first connection portion with respect to the second connection portion . 44. The method for manufacturing a semiconductor device according to claim 43, wherein the drive connection member is formed of a flexible sheet having a surface in contact with the drive electrode and a surface in contact with the drive connection surface, the surface being made of at least a solder layer. 45. The method for manufacturing a semiconductor device according to claim 43 or 44, wherein the drive connection member comprises a sheet-like conductor portion and a solder layer in contact with a surface of the conductor portion, and is formed by immersing the conductor portion in a tank containing solder. The method for manufacturing a semiconductor device according to any one of claims 43 to 45, wherein in the electrode bonding step, the first connection portion and the driving electrode are bonded by pressing the first connection portion against the driving electrode using a heated tool. The method for manufacturing a semiconductor device according to any one of claims 43 to 45 , wherein in the electrode bonding step, the first connection portion and the drive electrode are bonded by laser processing. The method for manufacturing a semiconductor device according to any one of claims 43 to 47, wherein in the conductor joining process, the second connection portion and the driving conductor are joined by pressing the second connection portion against the driving conductor using a heated tool. The method for manufacturing a semiconductor device according to any one of claims 43 to 47 , wherein in the conductor joining step, the second connection portion and the driving conductor are joined by laser processing.