JP7530364B2 - Control module and semiconductor device - Google Patents

Description

The present disclosure relates to a control module and a semiconductor device including the control module.

Power modules are known that include multiple switching elements such as MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors). These switching elements are switched between on (conducting state) and off (blocking state) when a control signal is input from a control module to the control signal terminal (gate terminal in the case of a MOSFET). For example, Patent Document 1 discloses a power device that includes a power module and a control module. In this power device, the power module includes a power semiconductor element (switching element) and a case that houses the power semiconductor element. The control module is mounted on the power module and controls the switching operation of the power semiconductor element.

JP 2018-33200 A

One objective of the present disclosure is to provide a control module that is more suitable for controlling a power module. Another objective of the present disclosure is to provide a semiconductor device that includes such a control module.

The control module provided by the first aspect of the present disclosure includes a plurality of electronic components for controlling a power module having a main body and a power supply terminal, a circuit board arranged on the power module in a first direction and on which the plurality of electronic components are mounted, and a connection terminal formed on the circuit board and conducting to the power supply terminal. A power supply voltage is applied to the power supply terminal from an external power supply, the circuit board includes a protruding portion protruding beyond the main body when viewed in the first direction, and the connection terminal is arranged on the protruding portion.

The semiconductor device provided by the second aspect of the present disclosure comprises a control module provided by the first aspect and the power module.

According to the present disclosure, a control module that is more preferable for controlling a power module can be provided. In addition, a semiconductor device including such a control module can be provided.

FIG. 1 is a schematic diagram illustrating a circuit configuration of a semiconductor device. FIG. 4 is a circuit diagram of an upper arm drive circuit. FIG. 4 is a circuit diagram of a lower arm drive circuit. FIG. 4 is a circuit diagram of a common circuit. FIG. 2 is a plan view showing a device structure of the power module. FIG. 2 is a front view showing the device structure of the power module. FIG. 2 is a side view showing a device structure of the power module. FIG. 2 is a plan view showing a device structure of a control module. 2 is a plan view showing one (first layer) of a plurality of wiring layers of the circuit board. FIG. 2 is a plan view showing one (a second layer) of a plurality of wiring layers of the circuit board; FIG. 2 is a plan view showing one (third layer) of the wiring layers of the circuit board; FIG. 11 is a plan view showing one (fourth layer) of the wiring layers of the circuit board. FIG. 2 is a plan view showing one (a fifth layer) of the wiring layers of the circuit board. FIG. 1 is a plan view showing one (sixth layer) of the wiring layers of the circuit board. FIG. FIG. 2 is a layout diagram of components on a circuit board. FIG. 2 is a diagram showing a wiring layout on a circuit board. FIG. 2 is a plan view showing a device structure of the semiconductor device A1. FIG. 1 is a circuit diagram showing an example of use of a power module. FIG. 1 is a circuit diagram showing an example of use of a power module. FIG. 1 is a circuit diagram showing an example of use of a power module. FIG. 1 is a circuit diagram showing an example of use of a power module.

Preferred embodiments of the control module and semiconductor device of the present disclosure are described below with reference to the drawings. The control module of the present disclosure controls a power module used in a power converter such as an inverter or converter. In the following description, a semiconductor device including a power module and a control module is used as an example.

The terms "first," "second," "third," etc., used in this disclosure are used merely as labels and are not necessarily intended to assign any ordering to their objects.

The semiconductor device A1 of the present disclosure will be described with reference to Figures 1 to 17.

First, the circuit configuration of semiconductor device A1 will be explained with reference to Figures 1 to 4.

Figure 1 is a schematic diagram showing the circuit configuration of the semiconductor device A1. As shown in Figure 1, the semiconductor device A1 includes a power module PM and a control module CM1.

The power module PM is controlled by the control module CM1 and converts an input voltage into a predetermined output voltage. In the semiconductor device A1, the power module PM receives a DC voltage from a DC power source, converts the DC voltage into an AC voltage, and outputs the AC voltage. As shown in FIG. 1, the power module PM includes a switching circuit SW in its circuit configuration. The circuit configuration of the power module PM shown in FIG. 1 is an example, and the present disclosure is not limited thereto.

As shown in FIG. 1, the switching circuit SW includes two switching elements Q1 and Q2. Diodes (not shown) are connected in antiparallel to each of the switching elements Q1 and Q2. In other examples, these diodes may be omitted.

As shown in FIG. 1, the switching elements Q1 and Q2 are, for example, MOSFETs. Each switching element Q1 and Q2 is not limited to a MOSFET, and may be other transistors such as an IGBT or a bipolar transistor. The main constituent material of each switching element Q1 and Q2 is, for example, SiC (silicon carbide). The constituent material is not limited to SiC, and may be Si (silicon), GaN (gallium nitride), or GaAs (gallium arsenide), etc.

Each of the switching elements Q1 and Q2 includes a drain terminal, a source terminal, and a gate terminal. When each of the switching elements Q1 and Q2 is an IGBT, it includes a collector terminal instead of a drain terminal and an emitter terminal instead of a source terminal. In the example shown in FIG. 1, each of the switching elements Q1 and Q2 further includes a current sense terminal, but the present disclosure is not limited thereto.

The drain terminal of the switching element Q1 is connected to the terminal P. The terminal P is connected to the high-potential side connection line of an external DC power supply (not shown). The source terminal of the switching element Q1 is connected to the drain terminal of the switching element Q2. The connection point between the source terminal of the switching element Q1 and the drain terminal of the switching element Q2 is connected to two terminals O1 and O2. As another example, instead of the two terminals O1 and O2, only one terminal may be provided, or three or more terminals may be provided. The source terminal of the switching element Q2 is connected to the terminal N. The terminal N is connected to the low-potential side connection line of the external DC power supply. In the switching circuit SW, the two switching elements Q1 and Q2 are connected in series, with the switching element Q1 as the upper arm and the switching element Q2 as the lower arm. The gate terminals of the switching elements Q1 and Q2 are connected to the control module CM1.

The control module CM1 controls the driving of the power module PM (particularly the switching elements Q1, Q2). The control module CM1 operates with power supplied from the DC power source DC shown in FIG. 1. The power module PM controlled by the control module CM1 converts the input voltage (power source voltage) from the external DC power source connected to the two terminals P, N to a predetermined voltage, and outputs the converted voltage from the two terminals O1, O2. As shown in FIG. 1, the control module CM1 includes an upper arm drive circuit 10A, a lower arm drive circuit 20A, and a common circuit 30A.

The upper arm drive circuit 10A controls the drive of the upper arm switching element Q1. The upper arm drive circuit 10A switches the switching element Q1 between on (conducting state) and off (cutting state) by inputting a drive signal to the gate terminal of the switching element Q1.

The lower arm drive circuit 20A controls the drive of the lower arm switching element Q2. The lower arm drive circuit 20A switches the switching element Q2 between on (conducting state) and off (cutting state) by inputting a drive signal to the gate terminal of the switching element Q2.

Figure 2 shows a detailed circuit configuration of the upper arm drive circuit 10A. As shown in the figure, the upper arm drive circuit 10A includes an insulating power supply unit 11, a gate driver unit 12, a pre-driver unit 13, a surge protection unit 14, a short-circuit protection unit 15, a secondary power supply unit 16, and a voltage protection unit 17. Figure 3 shows a detailed circuit configuration of the lower arm drive circuit 20A. As shown in the figure, the lower arm drive circuit 20A includes an insulating power supply unit 21, a gate driver unit 22, a pre-driver unit 23, a surge protection unit 24, a short-circuit protection unit 25, a secondary power supply unit 26, and a voltage protection unit 27.

The isolated power supply units 11 and 21 generate drive power for the upper arm drive circuit 10A and the lower arm drive circuit 20A, respectively. The isolated power supply unit 11 includes an isolation transformer 111 and a power supply IC 112, and the isolated power supply unit 21 includes an isolation transformer 211 and a power supply IC 212. The isolation transformers 111 and 211 perform voltage transformation and insulate the input side from the output side. The power supply ICs 112 and 212 are arranged on the input side (left side in Figures 2 and 3) of the isolation transformers 111 and 211, respectively, and control the voltage input to the isolation transformers 111 and 211 in the isolated power supply units 11 and 21.

The gate driver units 12 and 22 each generate a control signal for controlling the driving of the upper arm switching element Q1 and the lower arm switching element Q2. The gate driver unit 12 includes a control IC 121, and the gate driver unit 22 includes a control IC 221. The control ICs 121 and 221 are dedicated ICs for controlling the driving of the switching elements Q1 and Q2. The control ICs 121 and 221 are, for example, insulated gate driver ICs, and are insulated from within. The control ICs 121 and 221 each have a built-in Miller clamp circuit. Alternatively, a Miller clamp circuit may be provided outside the control ICs 121 and 221.

The pre-driver units 13 and 23 convert the control signals generated by the gate driver units 12 and 22 into signals (drive signals) suitable for input to the gate terminals of the switching elements Q1 and Q2, respectively. Then, the converted signals (drive signals) are output to the switching elements Q1 and Q2. The pre-driver unit 13 includes a current limiting circuit 131, transistors 132 and 133, and multiple bias capacitors 134 and 135, and the pre-driver unit 23 includes a current limiting circuit 231, transistors 232 and 233, and multiple bias capacitors 234 and 235.

The current limiting circuits 131 and 231 are connected to the gate terminals of the switching elements Q1 and Q2. As shown in FIG. 2 and FIG. 3, the current limiting circuits 131 and 231 are both configured by combining a plurality of diodes and a plurality of resistors. The current limiting circuits 131 and 231 adjust the switching speed of the switching elements Q1 and Q2 by adjusting the resistance values of the plurality of resistors. In this embodiment, as shown in FIG. 2 and FIG. 3, the current limiting circuits 131 and 231 are configured to be able to individually adjust the switching speeds of the switching elements Q1 and Q2 when they are on and off by using diodes. The current limiting circuits 131 and 231 are not limited to a configuration in which a plurality of diodes and a plurality of resistors are combined, and may be configured by only a plurality of resistors or only a single resistor.

Transistors 132 and 133 are elements for switching switching element Q1 on and off. The switching of transistors 132 and 133 is controlled by control IC 121. Transistors 132 and 133 are, for example, bipolar transistors as shown in FIG. 2, but may be other transistors. When transistor 132 is on and transistor 133 is off, the potential of the gate terminal of switching element Q1 is increased to increase the gate voltage. This turns switching element Q1 on. On the other hand, when transistor 132 is off and transistor 133 is on, the potential of the gate terminal of switching element Q1 is decreased to decrease the gate voltage. This turns switching element Q1 off.

The transistors 232 and 233 are elements for switching the switching element Q2 on and off. The switching of the transistors 232 and 233 is controlled by the control IC 221. The transistors 232 and 233 are, for example, bipolar transistors as shown in FIG. 3, but are not limited to this and may be other transistors. When the transistor 232 is on and the transistor 233 is off, the potential of the gate terminal of the switching element Q2 is increased to increase the gate voltage. This turns the switching element Q2 on. On the other hand, when the transistor 232 is off and the transistor 233 is on, the potential of the gate terminal of the switching element Q2 is decreased to decrease the gate voltage. This turns the switching element Q2 off.

The bias capacitors 134 and 234 each supply a current on the positive bias side. The bias capacitors 135 and 235 each supply a current on the negative bias side. Resistors may be used instead of the bias capacitors 135 and 235.

In the pre-driver section 13, when the switching element Q1 is on, the transistor 132 is on and the transistor 133 is off. At this time, a current flows from the source terminal of the switching element Q1 through the bias capacitor 134, the transistor 132, and the current limiting circuit 131 (the diode and multiple resistors on the upper side of FIG. 2) to the gate terminal of the switching element Q1. On the other hand, when the switching element Q1 is off, the transistor 132 is off and the transistor 133 is on. At this time, a current flows from the gate terminal of the switching element Q1 through the current limiting circuit 131 (the diode and multiple resistors on the lower side of FIG. 2), the transistor 133, and the bias capacitor 135 to the source terminal of the switching element Q1. The same is true in the pre-driver section 23.

The surge protection units 14 and 24 are intended to protect the gate terminals of switching elements Q1 and Q2, respectively, from surge voltages.

The short circuit protection units 15 and 25 are for short circuit protection in the switching elements Q1 and Q2, respectively. The short circuit protection unit 15 includes two diodes 151 as shown in FIG. 2, and the short circuit protection unit 25 includes two diodes 251 as shown in FIG. 3. In each of the short circuit protection units 15 and 25, the number of diodes 151 and 251 is not limited to two, and may be one or three or more. The terminal voltages on the anode sides of the two diodes 151 are divided by two resistors R1, and the divided voltages are input to the SCPIN terminals of the control IC 121. Similarly, the terminal voltages on the anode sides of the two diodes 251 are divided by two resistors R2, and the divided voltages are input to the SCPIN terminals of the control IC 221. Each of the control ICs 121 and 221 detects a short circuit by the voltage input to the SCPIN terminal. For example, when a short circuit occurs in the switching elements Q1 and Q2, a large current flows through the switching elements Q1 and Q2. At this time, the terminal voltage on the anode side of the short circuit protection units 15 and 25 rises. Therefore, the control ICs 121 and 221 can detect an overcurrent, i.e., a short circuit, in the switching elements Q1 and Q2 by monitoring the value of the voltage input to the SCPIN terminal.

The secondary power supply units 16 and 26 are provided after the insulated power supply units 11 and 21 (on the right side in Figs. 2 and 3), respectively. The secondary power supply units 16 and 26 convert the outputs of the insulated power supply units 11 and 21 to appropriate voltages, respectively. The secondary power supply unit 16 includes an LDO 161 as shown in Fig. 2, and the secondary power supply unit 26 includes an LDO 261 as shown in Fig. 3. The LDOs 161 and 261 are each a low-dropout linear regulator.

The voltage protection units 17 and 27 each monitor overvoltage, undervoltage, and the like to protect the power supply. When an overvoltage or undervoltage occurs, the voltage protection units 17 and 27 forcibly shut down the control ICs 121 and 221. As shown in FIG. 2, the voltage protection unit 17 includes multiple comparators 171, and as shown in FIG. 3, the voltage protection unit 27 includes multiple comparators 271.

The common circuit 30A is a circuit portion in the control module CM1 that is used in common by the upper arm drive circuit 10A and the lower arm drive circuit 20A. Figure 4 shows the detailed circuit configuration of the common circuit 30A. As shown in Figure 4, the common circuit 30A includes an input filter section 31, a primary side power supply section 32, and a logic circuit section 33.

The input filter section 31 stabilizes the DC voltage VCC supplied from the DC power supply DC.

The primary power supply unit 32 is disposed after the input filter unit 31 (on the right side in FIG. 4). The primary power supply unit 32 converts the output of the input filter unit 31 to an appropriate voltage. As shown in FIG. 4, the primary power supply unit 32 includes an LDO 321. The LDO 321 is a low dropout linear regulator. The primary power supply unit 32 functions as a power supply for the logic circuit unit 33 and the like.

The logic circuit unit 33 receives an enable signal, a fault signal from the upper arm drive circuit 10A, a fault signal from the lower arm drive circuit 20A, and the like. Based on the input signals, the logic circuit unit 33 stops the lower arm drive circuit 20A, for example, when the upper arm drive circuit 10A goes into an abnormal state. The same is true in reverse.

2 to 4, the multiple terminals CP are external terminals for inputting operating power and input signals to the control module CM1. The multiple terminals CP are part of the connector CNT1 described later.

Next, the device structure of semiconductor device A1 will be described with reference to Figures 5 to 17.

For convenience, in Figures 5 to 17, the description will be given with reference to three mutually perpendicular directions (x direction, y direction, and z direction). Where necessary, one of the x directions will be designated as the x1 direction, and the other x direction will be designated as the x2 direction. The same applies to the y direction and z direction. The z direction corresponds to the thickness direction of the semiconductor device A1. The view in the z direction is also referred to as a planar view.

The semiconductor device A1 has a device structure including a power module PM and a control module CM1, similar to the circuit configuration shown in Figure 1. In the following description, the device structures of the power module PM and the control module CM1 will be described first, followed by the device structure of the semiconductor device A1.

Figures 5 to 7 show the device structure of the power module PM. Figure 5 is a plan view showing the power module PM. Figure 6 is a front view showing the power module PM. Figure 7 is a side view (right side view) showing the power module PM. As shown in Figures 5 to 7, the power module PM has a number of power terminals 511 to 514, a number of signal terminals 52, a case 53 and a top plate 54. The power module PM has built-in switching elements Q1 and Q2.

The two power terminals 511 and 512 are power terminals to which, for example, a power supply voltage is input. In this embodiment, an external power supply (not shown) is connected to the two power terminals 511 and 512, and a power supply voltage from the external power supply is applied between the power terminals 511 and 512. The power terminal 511 is connected to a high-potential side connection terminal of the external power supply, and the power terminal 512 is connected to a low-potential side connection terminal of the external power supply. The power terminal 511 is connected to a drain terminal of the switching element Q1 inside the power module PM, and the power terminal 512 is connected to a source terminal of the switching element Q2 inside the power module PM. The power terminal 511 is the positive pole (P terminal) of the power module PM, and the power terminal 512 is the negative pole (N terminal) of the power module PM. The power terminal 511 corresponds to the terminal P in the circuit configuration shown in FIG. 1, and the power terminal 512 corresponds to the terminal N in the circuit configuration shown in FIG. 1.

The two power terminals 511, 512 are supported by the case 53. The material of each of the power terminals 511, 512 is, for example, a thin metal plate made of copper. The surface of this thin metal plate may be nickel-plated.

As shown in FIG. 5, the two power terminals 511, 512 are spaced apart from each other in the y direction and are aligned in the y direction (aligned with each other along the y direction). Each power terminal 511, 512 has the same shape (or approximately the same shape; the same applies below). Each power terminal 511, 512 is exposed to the outside and has a connection hole that penetrates in the z direction. A fastening member such as a bolt is inserted into the connection hole.

The two power terminals 513 and 514 are output terminals from which a predetermined voltage is output, for example. In this embodiment, the two power terminals 513 and 514 are connected to a load (such as a motor) external to the semiconductor device A1. The two power terminals 513 and 514 output a power supply voltage (output voltage) converted by the switching elements Q1 and Q2. The two power terminals 513 and 514 are each electrically connected to a connection point between the source terminal of the switching element Q1 and the drain terminal of the switching element Q2. The power terminal 513 corresponds to the terminal O1 in the circuit configuration shown in FIG. 1, and the power terminal 514 corresponds to the terminal O2 in the circuit configuration shown in FIG. 1.

The two power terminals 513, 514 are supported by the case 53. The constituent material of each of the power terminals 513, 514 is the same thin metal plate as that of the power terminals 511, 512. The surface of this thin metal plate may be nickel plated.

As shown in FIG. 5, the two power terminals 513, 514 are located on the opposite side of the power terminals 511, 512 in the x direction with the auxiliary line AL1 as a reference. The two power terminals 513, 514 are spaced apart from each other in the y direction and lined up in the y direction. The two power terminals 513, 514 have the same shape. Each power terminal 513, 514 is exposed to the outside and has a connection hole that penetrates in the z direction. A fastening member such as a bolt is inserted into the connection hole. In the example shown in FIG. 5, the power module PM has two power terminals 513, 514, but only one power terminal may be provided to correspond to them.

The signal terminals 52 are input terminals or output terminals for various signals to control the switching elements Q1 and Q2 of the power module PM. The signal terminals 52 include a pair of gate signal terminals 521A and 521B, a pair of source sense signal terminals 522A and 522B, and a pair of current sense signal terminals 523A and 523B.

The pair of gate signal terminals 521A, 521B are elements of the external connection terminals of the power module PM. The pair of gate signal terminals 521A, 521B are connected to the control module CM1. The pair of gate signal terminals 521A, 521B are supported by the case 53. As shown in FIG. 6 and FIG. 7, each of the pair of gate signal terminals 521A, 521B is partially exposed to the outside of the power module PM, and the exposed portion protrudes from the top plate 54 in the z2 direction. The pair of gate signal terminals 521A, 521B is, for example, a metal rod made of copper. The surface of this metal rod is tin-plated. Nickel plating may be applied between the surface of this metal rod and the tin plating. The gate signal terminal 521A is conductive to the gate terminal of the switching element Q1, and the gate signal terminal 521B is conductive to the gate terminal of the switching element Q2. The gate signal terminal 521A corresponds to the terminal G1 in the circuit configuration shown in FIG. 1, and the gate signal terminal 521B corresponds to the terminal G2 in the circuit configuration shown in FIG.

The pair of source sense signal terminals 522A, 522B are elements of the external connection terminals of the power module PM. The pair of source sense signal terminals 522A, 522B are connected to the control module CM1. The pair of source sense signal terminals 522A, 522B are supported by the case 53. As shown in Figures 6 and 7, the pair of source sense signal terminals 522A, 522B protrude in the z direction in the same manner as the pair of gate signal terminals 521A, 521B. Both of the pair of source sense signal terminals 522A, 522B are made of metal rods based on the same constituent material as the pair of gate signal terminals 521A, 521B. The shape of both of the pair of source sense signal terminals 522A, 522B is the same as the shape of the pair of gate signal terminals 521A, 521B. The source sense signal terminal 522A is conductive to the source terminal of the switching element Q1, and the source sense signal terminal 522B is conductive to the source terminal of the switching element Q2. The source sense signal terminal 522A corresponds to the terminal SS1 in the circuit configuration shown in FIG. 1, and the source sense signal terminal 522B corresponds to the terminal SS2 in the circuit configuration shown in FIG.

The pair of current sense signal terminals 523A, 523B are elements of the external connection terminals of the power module PM. The pair of current sense signal terminals 523A, 523B are connected to the control module CM1. The pair of current sense signal terminals 523A, 523B are supported by the case 53. As shown in Figures 6 and 7, the pair of current sense signal terminals 523A, 523B protrude in the z direction in the same manner as the pair of gate signal terminals 521A, 521B. Both of the pair of current sense signal terminals 523A, 523B are made of metal rods based on the same constituent material as the pair of gate signal terminals 521A, 521B. The shape of both of the pair of current sense signal terminals 523A, 523B is the same as the shape of the pair of gate signal terminals 521A, 521B. The current sense signal terminal 523A is connected to the current sense terminal of the switching element Q1, and the current sense signal terminal 523B is connected to the current sense terminal of the switching element Q2. The current sense signal terminal 523A corresponds to the terminal S1 in the circuit configuration shown in Fig. 1, and the current sense signal terminal 523B corresponds to the terminal S2 in the circuit configuration shown in Fig. 1. If the switching elements Q1 and Q2 do not have current sense terminals, the current sense signal terminals 523A and 523B become non-connection terminals (NC terminals) that are not connected to the switching elements Q1 and Q2. Alternatively, if the switching element Q1 does not have a current sense terminal, the current sense signal terminals 523A and 523B do not need to be provided.

As shown in Fig. 6 (and Fig. 5), the gate signal terminal 521A, the source sense signal terminal 522A, and the current sense signal terminal 523A are spaced apart from each other in the x direction and extend parallel to each other. In a plan view (see Fig. 5), the gate signal terminal 521A, the source sense signal terminal 522A, and the current sense signal terminal 523A are disposed near the edge of the power module PM on the y2 direction side. They are located on the x2 direction side of the center of the case 53 in the x direction (see auxiliary line AL1 in Fig. 5).

As shown in Fig. 6 (and Fig. 5), the gate signal terminal 521B, the source sense signal terminal 522B, and the current sense signal terminal 523B are spaced apart from each other in the x direction and extend parallel to each other. In a plan view (see Fig. 5), the gate signal terminal 521B, the source sense signal terminal 522B, and the current sense signal terminal 523B are disposed near the edge of the power module PM on the y2 direction side. They are located on the x1 direction side of the center of the case 53 in the x direction (see auxiliary line AL1 in Fig. 5).

A pair of gate signal terminals 521A, 521B, a pair of source sense signal terminals 522A, 522B and a pair of current sense signal terminals 523A, 523B overlap each other when viewed in the x-direction.

The case 53 is an electrically insulating member, and is made of a synthetic resin having electrical insulation properties and excellent heat resistance, such as PPS (polyphenylene sulfide). The case 53 includes a main body 531 and a plurality of terminal blocks 532.

The main body 531 is a container that encloses the switching elements Q1 and Q2. The main body 531 is rectangular in plan view. The main body 531 supports multiple signal terminals 52.

The terminal blocks 532 support the power terminals 511 to 514. Each power terminal 51 is placed on the terminal block 532. As shown in FIG. 5, the terminal block 532 supporting the power terminal 511 and the terminal block 532 supporting the power terminal 512 extend in the x2 direction from the edge of the main body 531 on the x2 direction side. As shown in FIG. 5, the terminal block 532 supporting the power terminal 513 and the terminal block 532 supporting the power terminal 514 extend in the x1 direction from the edge of the main body 531 on the x1 direction side. As shown in FIG. 6, for example, a nut NT is disposed inside each terminal block 532. The screw hole of each nut NT is connected to a connection hole formed in each power terminal 51. The fastening member inserted into the connection hole of each power terminal 511 to 514 is fixed by being fitted into each nut NT.

As shown in FIG. 5, the case 53 has a plurality of mounting holes 533 and a plurality of mounting holes 534. The plurality of mounting holes 533 are used when attaching the control module CM1 to the power module PM. As shown in FIG. 5, the plurality of mounting holes 533 are formed at each of the four corners of the main body 531. The plurality of mounting holes 534 are used when attaching the power module PM to a support member or a heat dissipation member. As shown in FIG. 5, the plurality of mounting holes 534 are formed between the terminal block 532 supporting the power terminal 511 and the terminal block 532 supporting the power terminal 512, and between the terminal block 532 supporting the power terminal 513 and the terminal block 532 supporting the power terminal 514, one each.

The top plate 54 closes the internal area of the power module PM formed by the case 53. The top plate 54, like the case 53, is made of electrically insulating synthetic resin. The control module CM1 is mounted on the top plate 54.

Figures 8 to 16 show the device structure of the control module CM1. Figure 8 is a plan view showing the device structure of the control module CM1. As shown in Figure 8, in its device structure, the control module CM1 comprises a connection terminal TM, a circuit board 60, and a number of electronic components. In Figure 8, the wiring formed on the circuit board 60 (wiring patterns 61 to 63, described below) is shown mixed, with some shown solid in black and others shown by outline lines.

The connection terminal TM is formed on the circuit board 60. A power line such as a wire harness is connected to the connection terminal TM, and the connection terminal TM is electrically connected to the power terminal 511 of the power module PM via the power line. The connection terminal TM is, for example, a screw terminal formed (placed) on the circuit board 60. As shown in FIG. 8, the connection terminal TM is located on the x2 direction side and the y2 direction side of the circuit board 60. The connection terminal TM is not limited to a screw terminal, and may be a through hole penetrating the circuit board 60, or an electrode pad (made of solder, for example) on the circuit board 60.

As shown in FIG. 8, the circuit board 60 is rectangular in plan view. In plan view, the circuit board 60 has a pair of first edges 60a each extending in the x direction and a pair of second edges 60b each extending in the y direction. Each of the first edges 60a is longer than each of the second edges 60b. In plan view, the circuit board 60 includes recesses 60c recessed inward from each of the second edges 60b. In the example shown in FIG. 8, each recess 60c is a recess defined by an arc-shaped edge in plan view.

The circuit board 60 is a multi-layer board. The number of layers of the circuit board 60 is not particularly limited, but in this example, there are six layers. The circuit board 60 includes multiple wiring layers Ly1 to Ly6 that are stacked with insulating layers between them. Each of the wiring layers Ly1 to Ly6 includes multiple wiring patterns 61 to 63 that are spaced apart from each other in a plan view.

Figures 9 to 14 show plan views of the wiring layers Ly1 to Ly6. Wiring layer Ly1 is the top layer of the circuit board 60. In the plan view shown in Figure 8, wiring layer Ly1 is shown. Wiring layer Ly6 is the bottom layer of the circuit board 60. Wiring layers Ly2, Ly3, Ly4, and Ly5 are middle layers of the circuit board 60. Wiring layers Ly2, Ly3, Ly4, and Ly5 are stacked in this order from wiring layer Ly1 toward wiring layer Ly6. Each of the wiring layers Ly1 to Ly6 includes a plurality of wiring patterns 61 to 63, as shown in Figures 9 to 14, respectively. In Figures 9 to 14, each of the wiring patterns 61 to 63 is shown filled in black. 9, similarly to FIG. 8, the wiring patterns 61 to 63 are divided into those shown filled in black and those shown by outlines.

The multiple wiring patterns 61 to 63 are conductive paths for multiple electronic components. The multiple wiring patterns 61 to 63 are arranged at a distance from each other. As shown in Figures 9 to 14, each wiring pattern 61 to 63 is formed across multiple wiring layers Ly1 to Ly6. Each wiring pattern 61 to 63 formed on each of the multiple wiring layers Ly1 to Ly6 is conductive, for example, by a via electrode that penetrates the insulating layer. In some of the multiple wiring layers Ly1 to Ly6 (for example, wiring layers Ly3, Ly5, Ly6), each wiring pattern 61 to 63 is a solid pattern. The solid pattern can be connected to ground, for example, to function as an electromagnetic shield.

As shown in Figures 9 to 14, wiring patterns 61 and 62 are aligned in the x direction in a plan view. Wiring pattern 61 is located on the x2 direction side of wiring pattern 62. Wiring pattern 63 is aligned in the y direction with wiring patterns 61 and 62 in a plan view. Wiring patterns 61 and 62 are located on the y2 direction side of wiring pattern 63. Wiring pattern 63 is connected in the y direction from one to the other of the pair of second edges 60b in a plan view. Wiring pattern 63 is rectangular in shape that is long in the y direction in a plan view.

The wiring patterns 61 to 63 formed on each of the multiple wiring layers Ly1 to Ly6 are formed in approximately the same region for each wiring pattern in a planar view. Specifically, the wiring patterns 61 (six wiring patterns 61) formed on each of the wiring layers Ly1 to Ly6 are formed in approximately the same region ("first pattern region F1") in a planar view. Similarly, the six wiring patterns 62 are formed in another approximately the same region ("second pattern region F2") in a planar view, and the six wiring patterns 63 are formed in yet another approximately the same region ("third pattern region F3") in a planar view. In Figures 9 to 14, the first pattern region F1, the second pattern region F2, and the third pattern region F3 are each indicated by a thick dashed line.

9 to 14, the circuit board 60 includes, in plan view, a number of insulating regions 65 to 68. The insulating regions 65 to 68 are regions formed by separating the wiring patterns 61 to 63 from one another.

As shown in Figures 9 to 14, the insulating region 65 is arranged between the wiring patterns 61 and 62. The insulating region 66 is arranged between the wiring patterns 61 and 63. The insulating region 67 is arranged between the wiring patterns 62 and 63. The insulating region 68 is arranged around the connection terminal TM in a planar view. The insulating region 68 is formed in a range of at least a radius of about 9 mm from the center of the connection terminal TM in a planar view. Each of the insulating regions 65 to 68 is formed in each of the wiring layers Ly1 to Ly6. The insulating regions 65 to 68 in the multiple wiring layers Ly1 to Ly6 overlap each other in a planar view.

Insulating region 65, insulating region 66, and insulating region 67 are connected to each other. The composite region formed by insulating region 66 and insulating region 67 is connected in the x direction from one of the pair of second edges 60b of the circuit board 60 to the other. Insulating region 65 is connected in the y direction from the first edge 60a on the x2 direction side of the circuit board 60 to the composite region. In a plan view, insulating region 65 extends in the y direction. A portion of insulating region 65 is bent.

As shown in Figures 8 to 14, the circuit board 60 has a plurality of terminal connection parts 70 formed thereon. Each of the plurality of terminal connection parts 70 includes a through hole penetrating the circuit board 60 in the z direction. Each signal terminal 52 of the power module PM is inserted into this through hole. The plurality of terminal connection parts 70 include a pair of gate connection parts 71A, 71B, a pair of source sense connection parts 72A, 72B, and a pair of current sense connection parts 73A, 73B. The gate connection part 71A, the source sense connection part 72A, and the current sense connection part 73A are collectively referred to as the upper arm terminal connection part 70A, and the gate connection part 71B, the source sense connection part 72B, and the current sense connection part 73B are collectively referred to as the lower arm terminal connection part 70B. As shown in Figures 9 to 14, the insulating region 65 is bent in the region of the circuit board 60 on the y2 direction side of the upper arm terminal connection part 70A and the lower arm terminal connection part 70B.

The gate connection portion 71A has the gate signal terminal 521A inserted therethrough and is electrically connected to the gate terminal of the switching element Q1. The gate connection portion 71A is electrically connected to the wiring pattern 61. The gate connection portion 71B has the gate signal terminal 521B inserted therethrough and is electrically connected to the gate terminal of the switching element Q2. The gate connection portion 71B is electrically connected to the wiring pattern 62.

The source sense connection part 72A has the source sense signal terminal 522A inserted therethrough and is electrically connected to the source terminal of the switching element Q1. The source sense connection part 72A is electrically connected to the wiring pattern 61. The source sense connection part 72B has the source sense signal terminal 522B inserted therethrough and is electrically connected to the source terminal of the switching element Q2. The source sense connection part 72B is electrically connected to the wiring pattern 62.

The current sense connection part 73A has the current sense signal terminal 523A inserted therethrough and is conductive to the current sense terminal of the switching element Q1. The current sense connection part 73A is conductive to the wiring pattern 61. The current sense connection part 73B has the current sense signal terminal 523B inserted therethrough and is conductive to the current sense terminal of the switching element Q2. The current sense connection part 73B is conductive to the wiring pattern 62.

The gate connection portion 71A, the source sense connection portion 72A, and the current sense connection portion 73A are aligned in the x direction. The gate connection portion 71A and the current sense connection portion 73A are located on opposite sides of the source sense connection portion 72A. The gate connection portion 71A is located on the x2 side of the source sense connection portion 72A, and the current sense connection portion 73A is located on the x1 side of the source sense connection portion 72A.

The gate connection portion 71B, the source sense connection portion 72B, and the current sense connection portion 73B are aligned in the x direction. The gate connection portion 71B and the current sense connection portion 73B are located on opposite sides of the source sense connection portion 72B. The gate connection portion 71B is located on the x1 side of the source sense connection portion 72B, and the current sense connection portion 73B is located on the x2 side of the source sense connection portion 72B.

The upper arm terminal connection portion 70A is located on the x2 side of the center in the x direction of the circuit board 60 (see auxiliary line AL2 in FIG. 8). The lower arm terminal connection portion 70B is located on the x1 side of the center in the x direction of the circuit board 60 (see auxiliary line AL2 in FIG. 8). The upper arm terminal connection portion 70A and the lower arm terminal connection portion 70B are located on the y2 side of the center in the y direction of the circuit board 60 (see auxiliary line AL3 in FIG. 8).

Multiple electronic components are mounted on a circuit board 60. Figure 15 shows the component layout on the circuit board 60. In Figure 15, the wiring patterns 61 to 63 are omitted. Figure 16 shows the relationship between the component layout and the wiring layout. In Figure 16, multiple electronic components are shown with imaginary lines (dashed lines).

The multiple electronic components include a connector CNT1, a first component group, a second component group, and a third component group.

Connector CNT1 is a hardware interface for inputting the power and input signals required for the operation of each electronic component to control module CM1. Connector CNT1 is mounted on the z2 direction side of circuit board 60. Connector CNT1 is a rectangular parallelepiped, and has a rectangular shape extending in the x direction in a plan view. As shown in Figures 15 and 16, connector CNT1 is positioned so that its long side direction is the same as the long side direction of circuit board 60. The insertion port of connector CNT1 faces, for example, upward (z2 direction).

The connector CNT1 is disposed on the third pattern region F3 and is joined to the wiring pattern 63. In a plan view, as shown in FIG. 16, the connector CNT1 and the insulating region 65 are aligned in the y direction.

The first component group is a collection of multiple electronic components that constitute the upper arm drive circuit 10A shown in Figure 2. Some of the electronic components in the first component group are arranged in the first pattern area F1 and are conductive to the wiring pattern 61, as shown in Figures 15 and 16.

The second component group is a collection of multiple electronic components that constitute the lower arm drive circuit 20A shown in Figure 3. A portion of the second component group is arranged in the second pattern area F2 and is conductive to the wiring pattern 62, as shown in Figures 15 and 16.

The third component group is a collection of multiple electronic components that constitute the common circuit 30A shown in Figure 4. The third component group is arranged in the third pattern area F3 together with a portion of the first component group and a portion of the second component group, as shown in Figures 15 and 16, and is conductive to the wiring pattern 63.

As shown in Figure 15, the surge protection unit 14 is disposed near the upper arm terminal connection part 70A. Also, as shown in Figure 15, the surge protection unit 24 is disposed near the lower arm terminal connection part 70B.

As shown in Fig. 15, the pre-driver unit 13 is disposed closer to the upper arm terminal connection part 70A than the gate driver unit 12. Also, as shown in Fig. 15, the pre-driver unit 23 is disposed closer to the lower arm terminal connection part 70B than the gate driver unit 22.

16, the isolation transformer 111 and the control IC 121 overlap the wiring pattern 61, the wiring pattern 63, and the insulating region 66 in plan view. The isolation transformer 111 and the control IC 121 are each connected to the wiring pattern 61 on one side and to the wiring pattern 63 on the other side, with an insulated portion of their interiors in between. The isolation transformer 211 and the control IC 221 overlap the wiring pattern 62, the wiring pattern 63, and the insulating region 67 in plan view, as shown in FIG. 16, the isolation transformer 211 and the control IC 221 are each connected to the wiring pattern 62 on one side and to the wiring pattern 63 on the other side, with an insulated portion of their interiors in between.

The multiple resistors of the current limiting circuit 131 are, for example, chip resistors. The multiple resistors of the current limiting circuit 231 are, for example, chip resistors.

Each transistor 132, 133 and each transistor 232, 233 are arranged in different orientations. For example, as shown in FIG. 17, each transistor 132, 133 is arranged sideways (inclined by approximately 90°) with respect to each transistor 232, 233. Specifically, the direction in which multiple lead terminals protrude from the sealing resin in each transistor 132, 133 and the direction in which multiple lead terminals protrude from the sealing resin in each transistor 232, 233 are shifted by approximately 90°. This makes it possible to reduce the planar area of the circuit board 60.

As shown in Figure 16, each diode 151 is arranged in an insulating region 68. As shown in Figure 16, each diode 251 is arranged in an insulating region 65. In a plan view, each diode 251 is arranged on the y2 direction side of the lower arm terminal connection portion 70B. In the example shown in Figure 16, in particular, each diode 251 and the lower arm terminal connection portion 70B are aligned in the y direction.

Figure 17 shows the device structure of semiconductor device A1. Figure 17 is a plan view showing the device structure of semiconductor device A1. As shown in Figure 17, in semiconductor device A1, the control module CM1 is mounted on the power module PM. Figure 17 is a plan view showing the state in which the control module CM1 is mounted on the power module PM.

In the semiconductor device A1, as shown in Fig. 17, the control module CM1 protrudes in the y2 direction beyond the main body portion 531 of the power module PM. The control module CM1 hardly protrudes in the y1 direction beyond the main body portion 531 of the power module PM. In a plan view, the edge of the control module CM1 on the y1 direction approximately coincides with the edge of the main body portion 531 of the power module PM on the y1 direction.

17, the circuit board 60 includes a protruding portion 69 that protrudes in the y2 direction beyond the main body portion 531. The dimension of the protruding portion 69 in the y direction is, for example, about 10 mm. A connection terminal TM is arranged on the protruding portion 69. A plurality of diodes 151 are arranged in an insulating region 68 located in the protruding portion 69, and a plurality of diodes 251 are arranged in an insulating region 65 located in the protruding portion 69.

In the semiconductor device A1, the power terminals 511, 512 of the power module PM protrude in the x2 direction beyond the circuit board 60 of the control module CM1 as shown in Fig. 17. The power terminals 513, 514 of the power module PM protrude in the x1 direction beyond the circuit board 60 of the control module CM1 as shown in Fig. 17. Each terminal block 532 protrudes in the x direction beyond the circuit board 60 of the control module CM1.

As shown in FIG. 17, the connection terminal TM of the control module CM1 and the power terminal 511 of the power module PM are connected, for example, by a wire harness WH. As a result, the connection terminal TM is electrically connected to the power terminal 511. The electrical connection between the connection terminal TM and the power terminal 511 is not limited to the wire harness WH. Since the connection terminal TM is connected to the power terminal 511, as shown in FIG. 17, it is disposed closer to the power terminals 511 and 512 in the x direction than the power terminals 513 and 514. As described above, the power terminal 511 is electrically connected to the drain terminal of the switching element Q1. When the switching element Q1 is on, the current on the circuit board 60 side flows to the power module PM (the drain terminal of the switching element Q1) through the diodes 151 and the connection terminal TM. On the other hand, when the switching element Q1 is off, no current flows to the circuit board 60 side due to the presence of the diodes 151. However, a high voltage is applied to each diode 151.

The effects of the control module CM1 and semiconductor device A1 disclosed herein are as follows:

The control module CM1 has a connection terminal TM that is electrically connected to the power terminal 511. The power terminal 511 is connected to, for example, an external DC power source, and a power supply voltage is applied from the external DC power source. With this configuration, even if the power module PM does not have a dedicated terminal for detecting the power supply current, a power supply current signal (drain sense signal) can be input to the control module CM1 via the connection terminal TM. Therefore, the control module CM1 can be configured in a manner that is favorable for controlling the power module PM.

In the control module CM1, the connection terminal TM is arranged on the protruding portion 69. In a plan view, the protruding portion 69 protrudes further than the main body portion 531 of the power module PM. As described above, the connection terminal TM is conductive to the power terminal 511. Therefore, a relatively large voltage is applied to the connection terminal TM in the semiconductor device A1, and the influence of this large voltage (for example, electromagnetic noise) is also relatively large. Therefore, by arranging the connection terminal TM on the protruding portion 69, the power module PM is not arranged below the connection terminal TM. This makes it possible to suppress the adverse influence of the voltage applied to the connection terminal TM on the power module PM. Therefore, the control module CM1 can be configured in a manner that is favorable for controlling the power module PM.

The control module CM1 includes each diode 151 for the short circuit protection detection circuit of the switching element Q1. Each diode 151 is arranged in an insulating region 68 arranged around the connection terminal TM. That is, each diode 151 is arranged in the insulating region 68 provided for the connection terminal TM. When the switching element Q1 is off, a high voltage is applied to each diode 151. Therefore, in order to prevent adverse effects on other wiring (each wiring pattern 61 to 63), it is preferable to make the area around each diode 151 an insulating region without forming the wiring patterns 61 to 63. Since the control module CM1 arranges each diode 151 in the insulating region 68, there is no need to provide a separate insulating region for each diode 151, and it is possible to arrange components by effectively utilizing the insulating region 68.

The control module CM1 includes diodes 251 for the short circuit protection detection circuit of the switching element Q2. Each diode 251 is arranged in an insulating region 65 that insulates the wiring pattern 61 from the wiring pattern 62. In other words, each diode 251 is arranged in the insulating region 65 for insulating the wiring pattern 61 from the wiring pattern 62. When the switching element Q2 is off, a high voltage is applied to each diode 251. Therefore, in order to prevent adverse effects on other wiring (each wiring pattern 61 to 63), it is preferable to make the surroundings of each diode 251 an insulating region without forming the wiring patterns 61 to 63. Since the control module CM1 arranges each diode 251 in the insulating region 65, there is no need to provide a separate insulating region for each diode 251, and it is possible to arrange components by effectively utilizing the insulating region 65.

In the control module CM1, the pre-driver section 13 is arranged near the upper arm terminal connection section 70A. This allows the current path through the pre-driver section 13 when the switching element Q1 is on and the current path through the pre-driver section 13 when the switching element Q1 is off to be shortened. Therefore, in the upper arm drive circuit 10A, the delay in the switching operation of the switching element Q1 can be suppressed. In particular, when a SiC MOSFET is used as the switching element Q1, the response of the switching operation is high. Therefore, if the above current path is long, the high response of the switching element Q1 cannot be effectively utilized. Therefore, the control module CM1 has a preferable component arrangement when configuring the switching element Q1 with a SiC MOSFET.

In the control module CM1, the pre-driver section 23 is disposed near the lower arm terminal connection section 70B. This allows the current path through the pre-driver section 23 when the switching element Q2 is on and the current path through the pre-driver section 23 when the switching element Q2 is off to be shortened. Therefore, in the lower arm drive circuit 20A, the delay in the switching operation of the switching element Q2 can be suppressed. In particular, when a SiC MOSFET is used as the switching element Q2, the response of the switching operation is high. Therefore, if the above current path is long, the high response of the switching element Q2 cannot be effectively utilized. Therefore, the control module CM1 has a preferable component arrangement when configuring the switching element Q2 with a SiC MOSFET.

In the control module CM1, the surge protection unit 14 is disposed near the upper arm terminal connection portion 70A. This configuration makes it possible to shorten the wiring distance between the surge protection unit 14 and the upper arm terminal connection portion 70A. For surge voltage protection by the surge protection unit 14, it is preferable to shorten the wiring distance between the surge protection unit 14 and the switching element Q1. Therefore, the control module CM1 makes it possible to achieve a component arrangement that is favorable for protecting the switching element Q1 from surge voltages.

In the control module CM1, the surge protection unit 24 is disposed near the lower arm terminal connection portion 70B. This configuration makes it possible to shorten the wiring distance between the surge protection unit 24 and the lower arm terminal connection portion 70B. For surge voltage protection by the surge protection unit 24, it is preferable to shorten the wiring distance between the surge protection unit 24 and the switching element Q2. Therefore, the control module CM1 makes it possible to achieve a component arrangement that is favorable for protecting the switching element Q2 from surge voltages.

In the control module CM1, the connector CNT1 and the insulating region 65 are aligned in the y direction. The insulating region 65 is located between the wiring pattern 61 and the wiring pattern 62. With this configuration, it is possible to reduce the difference in distance between the wiring distance from the upper arm drive circuit 10A to the upper arm terminal connection portion 70A and the wiring distance from the lower arm drive circuit 20A to the lower arm terminal connection portion 70B. Therefore, it is possible to suppress the bias in the wiring impedance between the upper arm drive circuit 10A and the lower arm drive circuit 20A. Therefore, it is possible to configure the control module CM1 in a manner that is favorable for controlling the power module PM.

In the control module CM1, a portion of the insulating region 65 is bent. Unlike the control module of the present disclosure, if the insulating region 65 is not bent, the difference between the planar area of the wiring pattern 61 and the planar area of the wiring pattern 62 may become large. This is because the insulating region 68 is formed. On the other hand, in the control module CM1, by bending a portion of the insulating region 65, the difference between the planar area of the wiring pattern 61 and the planar area of the wiring pattern 62 can be reduced. Therefore, the control module CM1 can be configured in a manner that is favorable for controlling the power module PM.

The semiconductor device A1 is equipped with a control module CM1. Therefore, the semiconductor device A1 can provide favorable control for the power module PM.

In this embodiment, the power module PM of the semiconductor device A1 includes two switching elements Q1 and Q2, but a diode (for example, a SiC Schottky barrier diode) may be provided instead of the switching element Q1. The anode of the diode is connected to the drain terminal of the switching element Q2, and the cathode is connected to the terminal P. In this case, a cathode signal terminal is provided instead of the source sense signal terminal 522A. Also, since the gate signal terminal 521A is unnecessary, it is not necessary to provide the gate signal terminal 521A, and an anode signal terminal may be provided instead of the gate signal terminal 521A.

In this embodiment, the power terminals 511 and 512 are power supply terminals, and the power terminals 513 and 514 are output terminals. However, the present invention is not limited to this, and the power terminals 513 and 514 may be power supply terminals and the power terminals 511 and 512 may be output terminals. Figures 18 to 21 show examples of use of the power module PM (semiconductor device A1). The examples shown in Figures 18 to 21 are merely examples, and the present invention is not limited to these. Figure 18 is a circuit diagram showing a case where the power module PM is used in a DC/AC inverter. Figure 19 is a circuit diagram showing a case where the power module PM is used in an AC/DC converter (rectifier circuit). Figure 20 is a circuit diagram showing a case where the power module PM is used in a step-down DC/DC converter. Figure 21 is a circuit diagram showing a case where the power module PM is used in a step-up DC/DC converter. Figures 18 and 19 show a full-bridge type using two power modules PM, but a half-bridge type using one power module PM may also be used.

18 and 20, the power terminals 511 and 512 are connected to an external power source PS as power terminals, and the power terminals 513 and 514 are connected to a load LO as output terminals. On the other hand, in the examples of FIG. 19 and FIG. 21, the power terminals 513 and 514 are connected to an external power source PS as power terminals, and the power terminals 511 and 512 are connected to a load LO as output terminals. In the example of FIG. 19, the external power source PS is an AC power source, and in the examples of FIG. 18, 20, and 21, the external power source PS is a DC power source. As described above, in the semiconductor device A1, the power terminals 511 and 512 may be power source terminals and the power terminals 513 and 514 may be output terminals, or the power terminals 513 and 514 may be power source terminals and the power terminals 511 and 512 may be output terminals. In addition, the external power source connected to the power terminals may be a DC power source or an AC power source.

The control module and semiconductor device according to the present disclosure are not limited to the above-described embodiments. The specific configurations of the components of the control module and semiconductor device according to the present disclosure can be freely designed in various ways.

The control module and semiconductor device according to the present disclosure include embodiments relating to the following supplementary notes.
Appendix 1.
a plurality of electronic components for controlling a power module having a main body and a power terminal;
a circuit board disposed on the power module in the first direction and on which the plurality of electronic components are mounted;
a connection terminal formed on the circuit board and electrically connected to the power supply terminal;
Equipped with
The power supply terminal is applied with a power supply voltage from an external power supply,
the circuit board includes a protruding portion that protrudes beyond the main body portion when viewed in the first direction,
The connection terminal is disposed on the protrusion.
Appendix 2.
the power supply terminal is disposed on a second direction side of the main body that is perpendicular to the first direction, and protrudes in the second direction beyond the circuit board when viewed in the first direction,
2. The control module of claim 1, wherein the protrusion protrudes in a third direction perpendicular to the first direction and the second direction.
Appendix 3.
the power supply terminal includes a first terminal portion connected to a high potential terminal of the external power supply and a second terminal portion connected to a low potential terminal of the external power supply,
3. The control module of claim 2, wherein the connection terminal is connected to the first terminal portion.
Appendix 4.
The first terminal portion and the second terminal portion are aligned in the third direction,
4. The control module of claim 3, wherein the protrusion protrudes in the third direction in a direction in which the first terminal portion is located relative to the second terminal portion.
Appendix 5.
the power module includes an upper arm switching element and a lower arm switching element,
5. The control module according to claim 2, wherein the electronic components control switching operations of the upper arm switching elements and the lower arm switching elements.
Appendix 6.
the power module further includes an output terminal for outputting a voltage converted from the power supply voltage by each of the switching operations,
6. The control module of claim 5, wherein the output terminal protrudes from the circuit board in a direction opposite to the direction in which the power terminal protrudes in the second direction.
Appendix 7.
7. The control module of claim 6, wherein the connection terminal is closer to the power supply terminal than the output terminal in the second direction.
Appendix 8.
the circuit board includes a first wiring pattern, a second wiring pattern, and a third wiring pattern that are spaced apart from each other when viewed in the first direction,
8. The control module according to claim 5, wherein each of the plurality of electronic components is connected to any one of the first wiring pattern, the second wiring pattern, and the third wiring pattern.
Appendix 9.
the power module includes a first signal terminal electrically connected to the upper arm switching element and a second signal terminal electrically connected to the lower arm switching element,
the first wiring pattern is electrically connected to the first signal terminal;
9. The control module of claim 8, wherein the second wiring pattern is electrically connected to the second signal terminal.
Appendix 10.
the first signal terminal and the second signal terminal have a rod shape extending in the first direction,
the circuit board includes a first terminal connection portion and a second terminal connection portion each penetrating the circuit board in the first direction;
the first terminal connection portion has the first signal terminal inserted therethrough,
the second terminal connection portion has the second signal terminal inserted therethrough;
10. The control module of claim 9, wherein the first terminal connection portion and the second terminal connection portion are aligned in the second direction.
Appendix 11.
11. The control module described in claim 10, wherein the first terminal connection portion and the second terminal connection portion overlap the power module when viewed in the first direction, and are arranged on a side where the protrusion is located rather than a center of the circuit board in the third direction.
Appendix 12.
the first wiring pattern and the second wiring pattern are aligned in the second direction,
12. The control module according to claim 8, wherein the third wiring pattern is aligned with each of the first wiring pattern and the second wiring pattern in the third direction.
Appendix 13.
13. The control module of any one of Appendix 8 to Appendix 12, wherein the circuit board further includes a first insulating region disposed between the first wiring pattern and the second wiring pattern, a second insulating region disposed between the first wiring pattern and the third wiring pattern, and a third insulating region disposed between the second wiring pattern and the third wiring pattern.
Appendix 14.
14. The control module of claim 13, wherein the plurality of electronic components include a connector to which a signal for controlling each of the switching operations is input, the connector being joined to the third wiring pattern.
Appendix 15.
15. The control module of claim 14, wherein when viewed in the first direction, the connector and the first insulating region are aligned in the third direction.
Appendix 16.
the plurality of electronic components include electronic components belonging to a first component group that controls a switching operation of the switching elements of the upper arm, and electronic components belonging to a second component group that controls a switching operation of the switching elements of the lower arm,
16. The control module of claim 13, wherein at least one electronic component belonging to the first component group is connected to the first wiring pattern, and at least one electronic component belonging to the second component group is connected to the second wiring pattern.
Appendix 17.
the first component group includes a first diode for a short-circuit protection detection circuit for the upper arm switching element,
the circuit board further includes a fourth insulating region disposed around the connection terminal when viewed in the first direction,
17. The control module of claim 16, wherein the first diode is disposed in the fourth isolation region.
Appendix 18.
the second component group includes a second diode for a short-circuit protection detection circuit for the lower arm switching element,
18. The control module of claim 16 or 17, wherein the second diode is disposed in the first isolation region.
Appendix 19.
the first component group includes a first transistor that outputs a drive signal to the upper arm switching element,
the second component group includes a second transistor that outputs a drive signal to the switching element of the lower arm,
19. The control module of any one of claims 16 to 18, wherein, when viewed in the first direction, an orientation of the first transistor and an orientation of the second transistor are different.
Appendix 20.
the circuit board has a plurality of insulating layers and a plurality of wiring layers stacked on top of each other and spaced apart from each other via the insulating layers;
the first insulating region, the second insulating region, and the third insulating region are formed in each of the plurality of wiring layers;
the first insulating regions formed in each of the plurality of wiring layers overlap each other when viewed in the first direction,
the second insulating regions formed in each of the plurality of wiring layers overlap each other when viewed in the first direction,
20. The control module of claim 13, wherein the third insulating regions formed in each of the plurality of wiring layers overlap each other when viewed in the first direction.
Appendix 21.
21. The control module of any one of claims 1 to 20, wherein the connection terminals are screw terminals.
Appendix 22.
22. A control module according to any one of claims 1 to 21,
A semiconductor device comprising the power module.
Appendix 23.
23. The semiconductor device according to claim 22, further comprising a wire harness connecting the connection terminal and the power supply terminal.

A1: semiconductor device CM1: control module 10A: upper arm drive circuit 20A: lower arm drive circuit 11, 21: insulated power supply unit 111, 211: insulated transformer 112, 212: power supply IC
12, 22: Gate driver unit 121, 221: Control IC
13, 23: Pre-driver section 131, 231: Current limiting circuit 132, 133, 232, 233: Transistors 134, 135, 234, 235: Bias capacitor 14, 24: Surge protection section 15, 25: Short circuit protection section 151, 251: Diode 16, 26: Secondary power supply section 17, 27: Voltage protection section 171, 271: Comparator R1, R2: Resistor 30A: Common circuit 31: Input filter section 32: Primary power supply section 33: Logic circuit section 60: Circuit board 60a: First edge 60b: Second edge 60c: Recesses Ly1 to Ly6: Wiring layer F1: First pattern area F2: Second pattern area F3: Third pattern area 61, 62, 63: Wiring patterns 65 to 68: Insulation area 69 : Protrusion 70 : Terminal connection portion 70A : Upper arm terminal connection portion 70B : Lower arm terminal connection portion 71A, 71B : Gate connection portion 72A, 72B : Source sense connection portion 73A, 73B : Current sense connection portion TM : Connection terminal CNT1 : Connector PM : Power module SW : Switching circuits Q1, Q2 : Switching element NT : Nuts 511-514 : Power terminal 52 : Signal terminals 521A, 521B : Gate signal terminals 522A, 522B : Source sense signal terminals 523A, 523B : Current sense signal terminal 53 : Case 531 : Main body portion 532 : Terminal blocks 533, 534 : Mounting holes 54 : Top plate WH : Wire harness

Claims (23)

a plurality of electronic components for controlling a power module having a main body and a power terminal;
a circuit board disposed on the power module in the first direction and on which the plurality of electronic components are mounted;
a connection terminal formed on the circuit board and electrically connected to the power supply terminal;
Equipped with
The power supply terminal is applied with a power supply voltage from an external power supply,
the circuit board includes a protruding portion that protrudes beyond the main body portion when viewed in the first direction,
The connection terminal is disposed on the protrusion. the power supply terminal is disposed on a second direction side of the main body that is perpendicular to the first direction, and protrudes in the second direction beyond the circuit board when viewed in the first direction,
The control module of claim 1 , wherein the protrusion protrudes in a third direction perpendicular to the first direction and the second direction. the power supply terminal includes a first terminal portion connected to a high potential terminal of the external power supply and a second terminal portion connected to a low potential terminal of the external power supply,
The control module according to claim 2 , wherein the connection terminal is connected to the first terminal portion. The first terminal portion and the second terminal portion are aligned in the third direction,
The control module according to claim 3 , wherein the protrusion protrudes in the third direction in a direction in which the first terminal portion is located relative to the second terminal portion. the power module includes an upper arm switching element and a lower arm switching element,
5. The control module according to claim 2, wherein the plurality of electronic components control switching operations of the upper arm switching elements and the lower arm switching elements. the power module further includes an output terminal for outputting a voltage converted from the power supply voltage by each of the switching operations,
The control module according to claim 5 , wherein the output terminal protrudes from the circuit board in a direction opposite to a direction in which the power supply terminal protrudes in the second direction. The control module of claim 6, wherein the connection terminal is closer to the power supply terminal in the second direction than the output terminal. the circuit board includes a first wiring pattern, a second wiring pattern, and a third wiring pattern that are spaced apart from each other when viewed in the first direction,
8. The control module according to claim 5, wherein each of the plurality of electronic components is connected to any one of the first wiring pattern, the second wiring pattern, and the third wiring pattern. the power module includes a first signal terminal electrically connected to the upper arm switching element and a second signal terminal electrically connected to the lower arm switching element,
the first wiring pattern is electrically connected to the first signal terminal;
The control module according to claim 8 , wherein the second wiring pattern is electrically connected to the second signal terminal. the first signal terminal and the second signal terminal have a rod shape extending in the first direction,
the circuit board includes a first terminal connection portion and a second terminal connection portion each penetrating the circuit board in the first direction;
the first terminal connection portion has the first signal terminal inserted therethrough,
the second terminal connection portion has the second signal terminal inserted therethrough,
The control module according to claim 9 , wherein the first terminal connection portion and the second terminal connection portion are aligned in the second direction. The control module according to claim 10, wherein the first terminal connection portion and the second terminal connection portion overlap the power module when viewed in the first direction, and are disposed, in the third direction, on the side where the protrusion is located, relative to the center of the circuit board. the first wiring pattern and the second wiring pattern are aligned in the second direction,
12. The control module according to claim 8, wherein the third wiring pattern is aligned with each of the first wiring pattern and the second wiring pattern in the third direction. A control module as described in any one of claims 8 to 12, wherein the circuit board further includes a first insulating region arranged between the first wiring pattern and the second wiring pattern, a second insulating region arranged between the first wiring pattern and the third wiring pattern, and a third insulating region arranged between the second wiring pattern and the third wiring pattern. The control module of claim 13, wherein the plurality of electronic components include a connector to which a signal for controlling each of the switching operations is input, the connector being joined to the third wiring pattern. The control module described in claim 14, wherein, when viewed in the first direction, the connector and the first insulating region are aligned in the third direction. the plurality of electronic components include electronic components belonging to a first component group that controls a switching operation of the switching elements of the upper arm, and electronic components belonging to a second component group that controls a switching operation of the switching elements of the lower arm,
16. The control module according to claim 13, wherein at least one electronic component belonging to the first component group is connected to the first wiring pattern, and at least one electronic component belonging to the second component group is connected to the second wiring pattern. the first component group includes a first diode for a short-circuit protection detection circuit for the upper arm switching element,
the circuit board further includes a fourth insulating region disposed around the connection terminal when viewed in the first direction,
17. The control module of claim 16, wherein the first diode is disposed in the fourth isolation region. the second component group includes a second diode for a short-circuit protection detection circuit for the lower arm switching element,
18. The control module of claim 16 or 17, wherein the second diode is disposed in the first insulating region. the first component group includes a first transistor that outputs a drive signal to the upper arm switching element,
the second component group includes a second transistor that outputs a drive signal to the switching element of the lower arm,
19. The control module according to claim 16, wherein an orientation of the first transistor and an orientation of the second transistor are different when viewed in the first direction. the circuit board has a plurality of insulating layers and a plurality of wiring layers stacked on top of each other and spaced apart from each other via the insulating layers;
the first insulating region, the second insulating region, and the third insulating region are formed in each of the plurality of wiring layers;
the first insulating regions formed in each of the plurality of wiring layers overlap each other when viewed in the first direction,
the second insulating regions formed in each of the plurality of wiring layers overlap each other when viewed in the first direction,
20. The control module according to claim 13, wherein the third insulating regions formed in each of the plurality of wiring layers overlap each other when viewed in the first direction. A control module as described in any one of claims 1 to 20, wherein the connection terminals are screw terminals. A control module according to any one of claims 1 to 21;
A semiconductor device comprising the power module. The semiconductor device of claim 22, further comprising a wire harness connecting the connection terminal and the power supply terminal.

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