JP7530724B2 - Magnetron plasma deposition equipment - Google Patents

Description

The present invention relates to a magnetron plasma deposition device.

Conventionally, a magnetron sputtering deposition device that includes a deposition roll and a magnetron sputter unit facing the deposition roll is known as a magnetron plasma deposition device.

In this magnetron sputtering device, a magnetic field is generated by the magnetron sputtering unit, which retains the electrons emitted from the target for a longer period of time, improving the efficiency of sputtering.

For example, a magnetron sputtering deposition device has been proposed that includes a cylinder and, inside the cylinder, four magnets that are held by a yoke (see, for example, Patent Document 1 below). In Patent Document 1, each of the four magnets has a rectangular cross section in cross section, with a fixed side that is fixed to the yoke and an opposing side on the opposite side.

JP 2017-150082 A

However, in the configuration disclosed in Patent Document 1, a tunnel-shaped magnetic field is generated that corresponds to the adjacent outer and inner magnets.

In recent years, magnetron plasma deposition equipment is required to achieve high deposition speeds.

However, the configuration described in Patent Document 1 above has limitations in achieving high film formation speeds.

The present invention provides a magnetron plasma deposition device capable of depositing films at a high deposition rate.

The present invention (1) includes a magnetron plasma deposition device comprising a deposition roll and a magnetron plasma unit arranged opposite the deposition roll, the magnetron plasma unit comprising a rotary target whose axis extends in the same direction as the axis of the deposition roll and a magnet unit arranged radially inward of the rotary target, and the angle θ determined as follows is 30 degrees or less.

A tangential component of the magnetic flux density of the rotary target is measured on the outer peripheral surface of the rotary target in one circumferential direction of the rotary target.
The angle θ formed by the line segment connecting the point corresponding to the maximum tangential component of the magnetic flux density and the center of the rotary target and the line segment connecting the point corresponding to the minimum tangential component of the magnetic flux density and the center is determined.

In this magnetron plasma deposition device, the angle θ is narrow, at 30 degrees or less, so that on the outer peripheral surface of the rotary target, the plasma corresponding to the maximum tangential component of the magnetic flux density and the plasma corresponding to the minimum tangential component of the magnetic flux density are close in the circumferential direction, and therefore it is possible to concentrate an area with a high density of electrons emitted from the rotary target. As a result, deposition can be performed at a high deposition rate.

The present invention (2) includes the magnetron plasma deposition device described in (1), in which the magnet unit includes a first magnetic pole portion, a second magnetic pole portion, a third magnetic pole portion, and a fourth magnetic pole portion in sequence along the circumferential direction, the second magnetic pole portion and the third magnetic pole portion having one of an N pole and an S pole, and the first magnetic pole portion and the fourth magnetic pole portion having the other magnetic pole, and in a cross section perpendicular to the axis of the rotary target, a virtual line passing through the second magnetic pole portion and along its magnetization direction and a virtual line passing through the third magnetic pole portion and along its magnetization direction intersect to converge as they approach the center of the deposition roll.

This magnetron plasma deposition device can reliably narrow the angle θ to 30 degrees or less. This allows deposition to be performed at an even higher deposition rate.

The present invention (3) includes the magnetron plasma deposition device according to (1) or (2), in which the magnet unit includes a first magnetic pole portion, a second magnetic pole portion, a third magnetic pole portion, and a fourth magnetic pole portion in sequence along the circumferential direction, the second magnetic pole portion and the third magnetic pole portion having one of an N pole and an S pole, and the first magnetic pole portion and the fourth magnetic pole portion having the other magnetic pole, and in a cross section perpendicular to the axis of the rotary target, a virtual line passing through the first magnetic pole portion and along its magnetization direction and a virtual line passing through the fourth magnetic pole portion and along its magnetization direction intersect so as to converge while moving away from the deposition roll.

This magnetron plasma deposition device can reliably narrow the angle θ to 30 degrees or less. This allows deposition to be performed at an even higher deposition rate.

The present invention (4) includes the magnetron plasma deposition device according to any one of (1) to (3), in which the magnet unit includes a first magnetic pole portion, a second magnetic pole portion, a third magnetic pole portion, and a fourth magnetic pole portion in sequence along the circumferential direction, each of the first magnetic pole portion, the second magnetic pole portion, the third magnetic pole portion, and the fourth magnetic pole portion is fixed to a fixed member, and in a cross section perpendicular to the axis of the rotary target, the magnet unit has a substantially rectangular shape having a fixed side fixed to the fixed member and an opposite side located on the opposite side to the fixed side, and the ratio (D/L) of the distance D between the opposite side and the fixed side to the length L of the opposite side is 1.5 or more.

This magnetron plasma deposition device can increase the maximum magnetic flux density at two points and decrease the minimum. This allows the generation of plasma with a high electron density, resulting in excellent deposition efficiency.

The magnetron plasma deposition device of the present invention can deposit films at a high deposition rate.

FIG. 1 is a cross-sectional view of a magnetron sputtering film forming apparatus according to one embodiment of the present invention. FIG. 2 is an enlarged cross-sectional view of a magnetron plasma unit provided in the magnetron sputtering film forming apparatus of FIG. FIG. 3 is a cross-sectional view of the magnet unit shown in FIG. FIG. 4 is a graph showing the relationship between the tangential component of the magnetic flux density and the angle θ in the rotary targets of Example 1 and Comparative Example 1. Figures 5A and 5B show an example in which the first and fourth magnetic pole portions are north poles and the second and third magnetic pole portions are south poles, where Figure 5A is a cross-sectional view and Figure 5B is a graph showing the relationship between the tangential component of the magnetic flux density of the rotary target and the angle θ. FIG. 6 is a cross-sectional view of the magnet unit of the first comparative example.

A magnetron sputtering deposition apparatus, which is one embodiment of the magnetron plasma deposition apparatus of the present invention, will be described with reference to Figures 1 to 4.

In FIG. 3, the magnet unit 20 (described below) is drawn without hatching in order to clearly show the magnetization directions (arrows) of the first magnetic pole portion 31 to the fourth magnetic pole portion 34 (described below).

As shown in FIG. 1, the magnetron sputtering deposition apparatus 1 is a roll-to-roll deposition apparatus that forms (deposits) a film 42 on a substrate 41 while transporting the substrate 41. The magnetron sputtering deposition apparatus 1 includes a transport unit 2 and a deposition unit 3.

The conveying section 2 includes a conveying casing 11, a delivery roll 5, a take-up roll 6, a guide roll 27, and a vacuum pump 26.

The conveying casing 11 has a generally box-like shape extending along the conveying direction. The conveying casing 11 houses the delivery roll 5, the take-up roll 6, and the guide roll 27.

The delivery roll 5 and the take-up roll 6 are disposed at the upstream and downstream ends, respectively, of the conveying direction within the conveying casing 11.

Multiple guide rolls 27 are arranged between the delivery roll 5 and the winding roll 6. The multiple guide rolls 27 are arranged so as to wind the substrate 41 around the film-forming roll 14.

The vacuum pump 26 is provided in the conveying casing 11.

The film forming section 3 comprises a film forming casing 12, a film forming roll 14, and multiple magnetron plasma units 15.

The deposition casing 12 is continuous with the transport casing 11 and constitutes a vacuum chamber together with the transport casing 11. The deposition casing 12 has an approximately box shape. The deposition casing 12 has a plurality of partition walls 25. The plurality of partition walls 25 extend toward the deposition roll 14. The deposition casing 12 is provided with a sputtering gas supply device (not shown). The deposition casing 12 houses the deposition roll 14 and a plurality of magnetron plasma units 15.

The axis of the film-forming roll 14 runs along the width direction perpendicular to the transport direction and thickness direction of the substrate 41.

The magnetron plasma units 15 are arranged facing each other on the radially outer side of the film-forming roll 14. The magnetron plasma units 15 are arranged at intervals from each other along the circumferential direction of the film-forming roll 14.

The magnetron plasma units 15 adjacent to each other in the circumferential direction are separated by partition walls 25. The space separated by the partition walls 25 constitutes the film formation chamber 10. The film formation chamber 10 is separated into multiple chambers within the film formation casing 12 (vacuum chamber). One magnetron plasma unit 15 is provided in one film formation chamber 10. Each of the multiple magnetron plasma units 15 includes a plasma casing 23, a first unit 24, and a second unit 28.

As shown in FIG. 2, the plasma casing 23 has a generally box-like shape with one side open toward the film-forming roll 14. The plasma casing 23 extends along the axis of the film-forming roll 14. The plasma casing 23 houses a first unit 24 and a second unit 28. The first unit 24 and the second unit 28 are arranged adjacent to each other at a distance along the circumferential direction of the film-forming roll 14. The first unit 24 and the second unit 28 face the film-forming roll 14 through the opening of the plasma casing 23.

The first unit 24 and the second unit 28 have the same configuration except for the direction of rotation of the rotary target 16 (described below). Therefore, the first unit 24 will be explained in detail, and the second unit 28 will be explained briefly.

As shown in FIG. 3, the first unit 24 includes a rotary target 16 and a magnet unit 20.

The rotary target 16 has a cylindrical shape and has an axis AL (center in cross-sectional view) parallel to the axis of the film-forming roll 14. The rotary target 16 can rotate (can move around) in the opposite direction to the rotation direction of the film-forming roll 14, for example. The rotary target 16 is electrically connected to a cathode source (not shown), and can thereby act as a cathode. In addition, a target material is laminated on the outer peripheral surface of the rotary target 16, that is, the rotary target 16 has a material for forming the film 42 on the outer peripheral surface. Examples of the material include metal oxides containing at least one metal selected from the group consisting of In, Sn, Zn, Ga, Sb, Nb, Ti, Si, Zr, Mg, Al, Au, Ag, Cu, Pd, and W. Specifically, examples of the material include indium-containing oxides such as indium tin oxide (ITO), and antimony-containing oxides such as antimony tin oxide (ATO).

The magnet unit 20 is housed radially inside the rotary target 16. The magnet unit 20 includes a fixed member 19, two first magnets 21, and two second magnets 22.

The fixing member 19 has a narrow plate shape extending in the axial direction of the film-forming roll 14, and is called a yoke. The fixing member 19 includes one main surface (one side in the thickness direction) 17 and the other main surface 18 (the other side in the thickness direction). Both the one main surface 17 and the other main surface 18 are flat surfaces. The one main surface 17 faces the film-forming roll 14. The other main surface 18 is parallel to the one main surface 17. Examples of materials for the fixing member 19 include metals such as iron.

The two first magnets 21 and the two second magnets 22 each have a rectangular prism shape extending along the axial direction of the film-forming roll 14. The two first magnets 21 and the two second magnets 22 are fixed to one main surface 17 of the fixed member 19. The two first magnets 21 and the two second magnets 22 are arranged adjacent to each other in the width direction of the fixed member 19. Specifically, the two first magnets 21 and the two second magnets 22 are in contact with each other in the width direction.

The two first magnets 21 and the two second magnets 22 include a first magnetic pole portion 31, a second magnetic pole portion 32, a third magnetic pole portion 33, and a fourth magnetic pole portion 34 in a cross-sectional view along the width direction and thickness direction of the fixed member 19 (corresponding to the direction perpendicular to the axis of the rotary target 16).

The first magnetic pole portion 31, the second magnetic pole portion 32, the third magnetic pole portion 33, and the fourth magnetic pole portion 34 are arranged in sequence along one circumferential direction (the direction of rotation of the rotary target 16). The first magnetic pole portion 31, the second magnetic pole portion 32, the third magnetic pole portion 33, and the fourth magnetic pole portion 34 are arranged in sequence toward one width direction side of the fixed member 19 so as to be in contact with each other.

The second magnetic pole portion 32 and the third magnetic pole portion 33 are composed of two first magnets 21. The second magnetic pole portion 32 and the third magnetic pole portion 33 have, for example, a north pole. The first magnetic pole portion 31 and the fourth magnetic pole portion 34 are composed of, for example, the second magnet 22. The first magnetic pole portion 31 and the fourth magnetic pole portion 34 have a south pole.

In a cross-sectional view, the first magnetic pole portion 31, the second magnetic pole portion 32, the third magnetic pole portion 33, and the fourth magnetic pole portion 34 each have the same generally rectangular shape. In a cross-sectional view, the first magnetic pole portion 31, the second magnetic pole portion 32, the third magnetic pole portion 33, and the fourth magnetic pole portion 34 each have a generally rectangular shape having a fixed edge 37 fixed to one main surface 17 of the fixed member 19, an opposite edge 38 located on the opposite side to the fixed edge 37, and two side edges 39 connecting both end edges.

The fixed sides 37 of the first magnetic pole portion 31, the second magnetic pole portion 32, the third magnetic pole portion 33, and the fourth magnetic pole portion 34 are disposed on one of the main surfaces 17. The opposite sides 38 of the first magnetic pole portion 31, the second magnetic pole portion 32, the third magnetic pole portion 33, and the fourth magnetic pole portion 34 are parallel to one of the main surfaces 17 of the fixed member 19. The opposite sides 38 of the first magnetic pole portion 31, the second magnetic pole portion 32, the third magnetic pole portion 33, and the fourth magnetic pole portion 34 are continuous along the width direction, and specifically, are flush (form one flat surface).

The first magnetic pole portion 31, the second magnetic pole portion 32, the third magnetic pole portion 33, and the fourth magnetic pole portion 34 each have a size in which the thickness direction length is longer than the width direction length. That is, the ratio (D/L) of the distance D between the opposite side 38 and the fixed side 37 to the length L of the opposite side 38 is, for example, more than 1, preferably 1.4 or more, more preferably 1.5 or more, even more preferably 1.6 or more, and particularly preferably 1.7 or more. The above ratio (D/L) is also, for example, 6 or less. If the ratio (D/L) is equal to or greater than the above lower limit, the maximum magnetic flux density at the point MAX_P described later can be made larger, and the minimum magnetic flux density at the point MIN_P described later can be made smaller. This allows the film 42 to be formed at an even higher film formation speed.

In a cross-sectional view, the magnetization directions of the first magnetic pole portion 31, the second magnetic pole portion 32, the third magnetic pole portion 33, and the fourth magnetic pole portion 34 are inclined in the thickness direction of the fixed member 19 (corresponding to the normal direction of one main surface 17 of the fixed member 19) (corresponding to the opposing direction of the fixed side 37 and the opposite side 38), and are also inclined in the width direction of the fixed member 19.

For example, the magnetization directions of the second magnetic pole portion 32 and the third magnetic pole portion 33 incline toward the outside in the width direction of the fixed member 19 as they move away from the film-forming roll 14 in the normal direction of the fixed member 19. The magnetization directions of the first magnetic pole portion 31 and the fourth magnetic pole portion 34 incline toward the outside in the width direction of the fixed member 19 as they move closer to the center of the film-forming roll 14 in the normal direction of the fixed member 19.

More specifically, in a cross-sectional view, a virtual line IL2 that passes through the second magnetic pole portion 32 and runs along its magnetization direction, and a virtual line IL3 that passes through the third magnetic pole portion 33 and runs along its magnetization direction, intersect to converge as they approach the center of the film-forming roll 14. Therefore, the intersection of the virtual lines IL2 and IL3 allows the magnetic flux on the surface of the rotary target 16 to be concentrated. This brings the two tunnel-shaped magnetic fields closer to each other, and ensures that the angle θ, described below, is narrowed to 30 degrees or less. As a result, a film can be formed at an even higher film-forming speed.

The angle between the line segment from the intersection CP1 of the two virtual lines IL2 and IL3 to the second magnetic pole portion 32 and the line segment from the intersection CP1 to the third magnetic pole portion 33 is, for example, 135 degrees or less, preferably 90 degrees or less, more preferably 80 degrees or less, and is, for example, more than 20 degrees, preferably 30 degrees or more, more preferably 40 degrees or more.

On the other hand, in a cross-sectional view, a virtual line IL1 that passes through the first magnetic pole portion 31 and runs along its magnetization direction, and a virtual line IL4 that passes through the fourth magnetic pole portion 34 and runs along its magnetization direction, intersect so as to converge while moving away from the film-forming roll 14. Therefore, the intersection of the virtual lines IL1 and IL4 allows the magnetic flux on the surface of the rotary target 16 to be concentrated. This brings the two tunnel-shaped magnetic fields closer to each other, reliably narrowing the angle θ (described below) to 30 degrees or less, and allows film formation at an even higher film-forming speed.

The angle between the line segment from the intersection CP2 of the two virtual lines IL1 and IL4 to the first magnetic pole portion 31 and the line segment from the intersection CP2 to the fourth magnetic pole portion 34 is, for example, 135 degrees or less, preferably 90 degrees or less, more preferably 80 degrees or less, and is, for example, more than 20 degrees, preferably 30 degrees or more, more preferably 40 degrees or more.

Examples of materials for the first magnet 21 and the second magnet 22 include permanent magnets such as neodymium magnets.

As shown in FIG. 2, the second unit 28 includes a rotary target 16 that can rotate in the same direction as the rotation direction of the film-forming roll 14, and the magnet unit 20 described above.

In this embodiment, the angle θ calculated below is 30 degrees or less.

The tangential component of the magnetic flux density is measured on the outer peripheral surface of the rotary target 16 in one circumferential direction of the rotary target. The angle θ between the line segment LS1 connecting the point MAX_P corresponding to the maximum tangential component of the magnetic flux density and the center of the rotary target 16, and the line segment LS2 connecting the point MIN_P corresponding to the minimum tangential component of the magnetic flux density and the center, is determined. The angle θ can be determined, for example, by simulating the magnetic field using commercially available software.

Here, we explain the tangential component of the magnetic flux density obtained by the above simulation.

As shown in FIG. 3, in the first unit 24, a tunnel-shaped first magnetic field MF1 (drawn with multiple dots) is generated from the opposite side 38 of the second magnetic pole portion 32 having an N pole toward the opposite side 38 of the first magnetic pole portion 31 having an S pole. In this embodiment, since the second magnetic pole portion 32 is an N pole and the first magnetic pole portion 31 is an S pole, the minimum of the magnetic flux density (i.e., the strongest value of the magnetic field on the negative side) can be obtained by measuring the tangential component of the magnetic flux density in one direction from the first magnetic pole portion 31 toward the second magnetic pole portion 32 in the circumferential direction of the rotary target 16 (see MIN_P in FIG. 4).

A tunnel-shaped second magnetic field MF2 (drawn with multiple dots) is generated from the opposite side 38 of the third magnetic pole portion 33 having an N pole toward the opposite side 38 of the fourth magnetic pole portion 34 having an S pole. In this embodiment, since the third magnetic pole portion 33 is an N pole and the fourth magnetic pole portion 34 is an S pole, the maximum of the magnetic flux density (i.e., the strongest value of the magnetic field on the positive side) can be obtained by measuring the tangential component of the magnetic flux density in one direction, from the third magnetic pole portion 33 toward the fourth magnetic pole portion 34, which is the circumferential direction of the rotary target 16. (See MAX_P in FIG. 4).

Therefore, if the tangential component of the magnetic flux density is measured in one direction around the circumference of the rotary target 16, from the first magnetic pole portion 31 to the fourth magnetic pole portion 34, a minimum and a maximum are usually observed in that order, as shown in Figure 4.

The second unit 28 is similar to the first unit 24.

Note that the point MAX_P, which corresponds to the maximum tangential component of the magnetic flux density, and the point MIN_P, which corresponds to the minimum tangential component, are synonymous with the points that correspond to the two maxima in the absolute value of the tangential component of the magnetic flux density.

The angle θ is the angle formed by the two line segments LS1 and LS2 on the side of the film-forming roll 14.

However, when the angle θ exceeds 30 degrees, as shown by the dashed line in FIG. 4 and FIG. 6, the circumferential distance between the plasma corresponding to the maximum tangential component of the magnetic flux density and the plasma corresponding to the minimum tangential component of the magnetic flux density becomes large on the radial outside of the rotary target 16. As a result, the area with high density of electrons emitted from the rotary target 16 is dispersed. Therefore, there is a limit to the high film formation speed.

In contrast, in this embodiment, as shown in FIG. 3, the angle θ is narrow, at 30 degrees or less, so that the circumferential distance between the plasma corresponding to the maximum tangential component of the magnetic flux density and the plasma corresponding to the minimum tangential component of the magnetic flux density is close on the radial outside of the rotary target 16. This allows the area with the highest density of electrons emitted from the rotary target 16 to be concentrated. This allows the film to be formed at a high film formation speed.

The above-mentioned deposition rate is actually obtained by forming a film 42 on a substrate 41 using a magnetron sputtering deposition device 1, multiplying the thickness of the film 42 by the transport speed of the substrate 41, and dividing the result by the cathode voltage of the rotary target 16. The deposition rate is also called the dynamic rate. The unit of the deposition rate is, for example, [nm·m/sec/kW]. The deposition rate can also be obtained by simulating a dilute fluid using commercially available software.

The angle θ is preferably 27 degrees or less, more preferably 26 degrees or less, even more preferably 25 degrees or less, and particularly preferably 23 degrees or less. It is usually 10 degrees or more. If the angle θ is equal to or greater than the lower limit, the magnetic flux density is prevented from becoming excessively low, and plasma can be generated continuously.

Next, we will explain how to form a film 42 on a substrate 41 using this magnetron sputtering deposition device 1.

First, prepare the magnetron sputtering deposition device 1 shown in Figure 1.

Then, the long substrate 41 is set in the magnetron sputtering film forming apparatus 1. The substrate 41 is not particularly limited, and examples thereof include polymer films and glass films (thin film glass). Examples of polymer films include polyester films (polyethylene terephthalate (PET) films, polybutylene terephthalate films, polyethylene naphthalate films, etc.), polycarbonate films, olefin films (polyethylene films, polypropylene films, cycloolefin films, etc.), acrylic films, polyethersulfone films, polyarylate films, melamine films, polyamide films, polyimide films, cellulose films, and polystyrene films.

To set the substrate 41 in the magnetron sputtering deposition device 1, as shown in FIG. 1, the substrate 41 is wound around the delivery roll 5, and then one longitudinal end of the substrate 41 is guided by a plurality of guide rolls 27 while being wound around the deposition roll 14 and then wound around the take-up roll 6.

Then, the vacuum pump 26 is driven to evacuate the inside of the transport casing 11 and the deposition casing 12. At the same time, sputtering gas is supplied from a sputtering gas supply device (not shown) into the deposition casing 12. Examples of sputtering gas include an inert gas such as argon, and a reactive gas that further contains oxygen.

Next, while the substrate 41 is continuously transported from the delivery roll 5 to the take-up roll 6, a cathode voltage is applied to the rotary target 16. This causes electrons to be emitted from the rotary target 16.

The electrons are then held for a long time in both the first magnetic field MF1 and the second magnetic field MF2 in the first unit 24 and the second unit 28, respectively.

Then, atoms (specifically, argon atoms) derived from the sputtering gas collide efficiently with the rotary target 16, which causes particles of the material from the rotary target 16 to adhere to the substrate 41 on the outer circumferential surface of the deposition roll 14. As a result, a film 42 is formed on the substrate 41 by sputtering, as shown in FIG. 1.

In this magnetron sputtering deposition device 1, the angle θ is narrow, at 30 degrees or less, so that on the outside of the deposition roll 14, the circumferential distance between the plasma corresponding to the maximum tangential component of the magnetic flux density and the plasma corresponding to the minimum tangential component of the magnetic flux density is short, and therefore, an area with a high density of electrons emitted from the rotary target 16 can be concentrated. As a result, the film 42 can be formed (deposited) on the substrate 41 at a high deposition speed.

In addition, in the cross-sectional view of the magnetron sputtering deposition device 1, a virtual line IL2 that passes through the second magnetic pole portion 32 and runs along the magnetization direction, and a virtual line IL3 that passes through the third magnetic pole portion 33 and runs along the magnetization direction, intersect to converge as they approach the center of the deposition roll, so that the magnetic flux on the surface of the rotary target 16 can be concentrated. This allows the two tunnel-shaped magnetic fields to approach each other, and the above-mentioned angle θ can be reliably narrowed to 30 degrees or less. This allows the film 42 to be formed at an even higher deposition speed.

In addition, in a cross-sectional view of the magnetron sputtering deposition device 1, a virtual line IL1 that passes through the first magnetic pole portion 31 and runs along the magnetization direction, and a virtual line IL4 that passes through the fourth magnetic pole portion 34 and runs along the magnetization direction, intersect to converge away from the deposition roll rotary target 16, so that the magnetic flux on the surface of the rotary target 16 can be concentrated. This allows the two tunnel-shaped magnetic fields to approach each other, and ensures that the angle θ is narrowed to 30 degrees or less. This allows the film 42 to be formed at an even higher deposition speed.

In this magnetron sputtering deposition device 1, if the ratio (D/L) of the distance D between the fixed side 37 and the opposite side 38 to the length L of the fixed side 37 in the first magnetic pole portion 31 to the fourth magnetic pole portion 34 is 1.5 or more, the maximum tangential component of the magnetic flux density can be made larger and the minimum tangential component of the magnetic flux density can be made smaller, so that the film 42 can be efficiently formed on the substrate 41 at an even higher deposition speed.

In this embodiment, the magnetron plasma unit 15 is equipped with a rotatable cylindrical rotary target 16. Therefore, even if the angle θ is narrowed to 30 degrees or less, the rotary target 16 can rotate, and the rotary target 16 becomes uniformly thin in the circumferential direction. Therefore, the film 42 can be formed by homogeneous sputtering and at a high film formation rate.

In one embodiment, the magnetization direction of each of the first magnetic pole portion 31, the second magnetic pole portion 32, the third magnetic pole portion 33, and the fourth magnetic pole portion 34 is inclined with respect to the normal direction and width direction of the fixed member 19, so that the angle θ related to the magnetic flux density is 30 degrees or less, but the method of setting the angle θ to the above upper limit or less is not limited to the above.

<Modification>
In the following modifications, the same reference numerals are used for the same components and steps as those in the above-described embodiment, and detailed descriptions thereof will be omitted. In addition, each modification can achieve the same effects as those in the above-described embodiment, unless otherwise specified. Furthermore, the embodiment and its modifications can be appropriately combined.

In one embodiment, a magnetron sputtering film forming apparatus 1 is illustrated as an example of the magnetron plasma film forming apparatus of the present invention, but a plasma CVD film forming apparatus, for example, can also be illustrated.

In one embodiment, the second magnetic pole portion 32 and the third magnetic pole portion 33 have a north pole, and the first magnetic pole portion 31 and the fourth magnetic pole portion 34 have a south pole, but the reverse may also be true.

In other words, as shown in FIG. 5A, the first magnetic pole portion 31 and the fourth magnetic pole portion 34 are north poles, and the second magnetic pole portion 32 and the third magnetic pole portion 33 are south poles. Then, if the tangential component of the magnetic flux density is measured in the circumferential direction of the rotary target 16 from the first magnetic pole portion 31 toward the fourth magnetic pole portion 34, as shown in FIG. 5B, first, a maximum (MAX_P) is obtained in the first magnetic field MF1, then a minimum (MIN_P) is obtained in the second magnetic field MF2, and from these, the angle θ can be calculated. With this modified example, the same effect as in the first embodiment can be achieved.

The present invention will be explained in more detail below with examples, manufacturing examples, comparative examples, and comparative manufacturing examples. Note that the present invention is not limited to the examples, manufacturing examples, comparative examples, and comparative manufacturing examples. In addition, the specific numerical values of the compounding ratio (ratio), physical property values, parameters, etc. used in the following description can be replaced with the upper limit (a numerical value defined as "equal to or less than") or lower limit (a numerical value defined as "equal to or more than" or "exceeding") of the corresponding compounding ratio (ratio), physical property value, parameter, etc. described in the above "Form for carrying out the invention".

Example 1
The magnetron sputtering film forming apparatus 1 according to the embodiment was prepared.

The first magnetic pole portion 31 to the fourth magnetic pole portion 34 each have the cross-sectional size shown in Table 1, and the magnetization direction is as shown in Figure 3 and listed in Table 1.

Example 2
A magnetron sputtering film formation apparatus 1 was prepared in the same manner as in Example 1, except that the magnetic poles of the first magnetic pole portion 31 and the second magnetic pole portion 32 were swapped, and the magnetic poles of the third magnetic pole portion 33 and the fourth magnetic pole portion 34 were swapped.

Comparative Example 1
A magnetron sputtering film forming apparatus 1 was prepared in the same manner as in Example 1, except that the cross-sectional sizes of the first magnetic pole part 31 to the fourth magnetic pole part 34 were changed as shown in Table 1.

The first magnetic pole portion 31 to the fourth magnetic pole portion 34 each have the cross-sectional size shown in Table 1, and the magnetization direction is as shown in FIG. 6 and listed in Table 1.

Examples 3 to 7
A magnetron sputtering film formation apparatus 1 was prepared in the same manner as in Example 1, except that the magnetization directions (IL1 to IL4) and/or cross-sectional sizes of the first magnetic pole portion 31 to the fourth magnetic pole portion 34 were changed as shown in Table 1.

The magnetization directions of the first magnetic pole portion 31 to the fourth magnetic pole portion 34 in each of the above-mentioned examples and comparative examples are adjusted in advance to be the magnetization directions shown in Table 1.

Production Example 1
Using the magnetron sputtering film-forming apparatus 1 of Example 1, a film 42 was formed on a substrate 41 in accordance with the description in Table 2.

Comparative Production Example 1
Using the magnetron sputtering film-forming apparatus 1 of Comparative Example 1, a film 42 was formed on a substrate 41 in accordance with the description in Table 2.

<Evaluation>
The magnetron sputtering deposition apparatus 1 of each of Examples 1 and 2 and Comparative Example 1, and the film formation properties of each of Production Example 1 and Comparative Production Example 1 were evaluated for the following items. The results are shown in Tables 1 and 3.

(1) Angle θ
The angle θ was obtained by simulating the magnetic field by the finite element method using the following software. The relationship between the magnetic flux density and the measurement direction (circumferential direction) in the measurement of the angle θ is shown in Figure 4 (Example 1 and Comparative Example 1) and Figure 5B (Example 2).

Software name: JMAG (JSOL)
Calculation method: Finite element method (2) Film deposition rate A
The deposition rate was determined by a simulation of a dilute fluid using the following software. The deposition rates of Examples 1 to 7 were determined as ratios to the deposition rate of Comparative Example 1, which was set to 100.

Software name: DSMC-Neutrals (Wavefront)
Calculation method: Direct Simulation Monte Carlo (DSMC) method (3) Film formation rate B
The film formation speed (dynamic rate) was measured in Production Example 1 and Comparative Production Example 1. The film formation speed (dynamic rate) was calculated by multiplying the thickness of the film 42 by the transport speed of the substrate 41 and dividing the product by the cathode voltage of the rotary target 16. Compared to the film formation speed of Comparative Production Example 1, the film formation speed of Production Example 1 was 27% higher.

As can be seen from Tables 1 and 3, there is a slight difference in the deposition rates (and the degree of improvement) between the deposition rate A (calculated value) in Example 1 and Comparative Example 1 and the deposition rate B (actual value) in Production Example 1 and Comparative Production Example 1. This is due to the following reasons.

In other words, the simulation used to calculate the deposition rate A approximates the behavior of the particles emitted from the rotary target 16 in a cross section perpendicular to the axis of the rotary target 16 (a so-called two-dimensional cross section), meaning that the behavior of the particles emitted from the rotary target 16 in the axial direction is not taken into account. On the other hand, in the measurement (actual measurement) of the deposition rate B, the action of the rotary target 16 in the axial direction is included (taken into account) in the measurement value.

(4) Specific resistance The films 42 of Production Example 1 and Comparative Production Example 1 were annealed by heating. The surface resistance of the annealed films 42 was measured by a four-point probe method. Compared to the surface resistance of Comparative Production Example 1, the surface resistance of Production Example 1 was 15% lower. In other words, the electrical conductivity was excellent.

1 Magnetron sputtering deposition apparatus 14 Deposition roll 15 Magnetron plasma unit 16 Rotary target 19 Fixed member 20 Magnet unit 31 First magnetic pole portion 32 Second magnetic pole portion 33 Third magnetic pole portion 34 Fourth magnetic pole portion 37 Fixed side 38 Opposite side L Length of opposite side D Separation distance LS1 Line segment LS2 connecting the point corresponding to the maximum tangential component of the magnetic flux density and the center Line segment IL1 connecting the point corresponding to the minimum tangential component of the magnetic flux density and the center Line segment IL2 from the intersection point to the first magnetic pole portion Line segment IL3 from the intersection point to the second magnetic pole portion Line segment IL4 from the intersection point to the third magnetic pole portion Line segment IL5 from the intersection point to the fourth magnetic pole portion

Claims (3)

A film-forming roll;
a magnetron plasma unit disposed opposite the deposition roll,
The magnetron plasma unit includes:
a rotary target having an axis extending in the same direction as the axis of the film-forming roll;
a magnet unit disposed radially inside the rotary target,
the magnet unit includes a first magnetic pole portion, a second magnetic pole portion, a third magnetic pole portion, and a fourth magnetic pole portion arranged in this order along a circumferential direction;
The second magnetic pole portion and the third magnetic pole portion have one of an N pole and an S pole,
the first magnetic pole portion and the fourth magnetic pole portion have the other magnetic pole,
In a cross-sectional view perpendicular to the axis of the rotary target, a virtual line passing through the second magnetic pole portion and extending along the magnetization direction thereof and a virtual line passing through the third magnetic pole portion and extending along the magnetization direction thereof intersect to converge as they approach the center of the film-forming roll ,
A magnetron plasma film forming apparatus, characterized in that the angle θ obtained as follows is 30 degrees or less .
On the outer circumferential surface of the rotary target, the tangential component of the magnetic flux density of the rotary target is measured in one circumferential direction of the rotary target, and the angle θ formed by the line segment connecting the point corresponding to the maximum tangential component of the magnetic flux density and the center of the rotary target and the line segment connecting the point corresponding to the minimum tangential component of the magnetic flux density and the center is calculated. A film-forming roll;
a magnetron plasma unit disposed opposite the deposition roll,
The magnetron plasma unit includes:
a rotary target having an axis extending in the same direction as the axis of the film-forming roll;
a magnet unit disposed radially inside the rotary target,
the magnet unit includes a first magnetic pole portion, a second magnetic pole portion, a third magnetic pole portion, and a fourth magnetic pole portion arranged in this order along a circumferential direction;
The second magnetic pole portion and the third magnetic pole portion have one of an N pole and an S pole,
the first magnetic pole portion and the fourth magnetic pole portion have the other magnetic pole,
In a cross-sectional view perpendicular to the axis of the rotary target, a virtual line passing through the first magnetic pole portion and extending along the magnetization direction thereof and a virtual line passing through the fourth magnetic pole portion and extending along the magnetization direction thereof intersect so as to converge while moving away from the film-forming roll ,
A magnetron plasma film forming apparatus, characterized in that the angle θ obtained as follows is 30 degrees or less .
On the outer circumferential surface of the rotary target, the tangential component of the magnetic flux density of the rotary target is measured in one circumferential direction of the rotary target, and the angle θ formed by the line segment connecting the point corresponding to the maximum tangential component of the magnetic flux density and the center of the rotary target and the line segment connecting the point corresponding to the minimum tangential component of the magnetic flux density and the center is calculated. A film-forming roll;
a magnetron plasma unit disposed opposite the deposition roll,
The magnetron plasma unit includes:
a rotary target having an axis extending in the same direction as the axis of the film-forming roll;
a magnet unit disposed radially inside the rotary target,
the magnet unit includes a first magnetic pole portion, a second magnetic pole portion, a third magnetic pole portion, and a fourth magnetic pole portion arranged in this order along a circumferential direction;
each of the first magnetic pole portion, the second magnetic pole portion, the third magnetic pole portion, and the fourth magnetic pole portion is fixed to a fixed member, and in a cross-sectional view perpendicular to the axis of the rotary target, has a substantially rectangular shape having a fixed side fixed to the fixed member and an opposite side located on the opposite side to the fixed side;
A ratio (D/L) of a distance D between the opposite side and the fixed side to a length L of the opposite side is 1.5 or more;
A magnetron plasma film forming apparatus, characterized in that the angle θ obtained as follows is 30 degrees or less .
On the outer circumferential surface of the rotary target, the tangential component of the magnetic flux density of the rotary target is measured in one circumferential direction of the rotary target, and the angle θ formed by the line segment connecting the point corresponding to the maximum tangential component of the magnetic flux density and the center of the rotary target and the line segment connecting the point corresponding to the minimum tangential component of the magnetic flux density and the center is calculated.

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