JP7535932B2 - SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - Google Patents

Description

The disclosed embodiments relate to a substrate processing apparatus and a substrate processing method.

Conventionally, a technique is known in which multiple substrates are immersed in a processing liquid stored in a processing tank, thereby performing liquid processing on the multiple substrates at the same time (see Patent Document 1).

JP 2019-50349 A

This disclosure provides a technology that can stably eject gas into the treatment liquid stored in a treatment tank.

A substrate processing apparatus according to one aspect of the present disclosure includes a processing tank, a first gas nozzle group, a second gas nozzle group, and a control unit. The processing tank processes a plurality of arranged substrates by immersing them in a processing liquid. The first gas nozzle group is disposed below the plurality of substrates inside the processing tank and ejects gas into the processing liquid stored in the processing tank. The second gas nozzle group is disposed adjacent to the first gas nozzle group and ejects gas into the processing liquid stored in the processing tank. The control unit controls each unit. Moreover, the control unit ejects gas from one of the first gas nozzle group and the second gas nozzle group into the processing liquid when the plurality of substrates are immersed in the processing liquid and processed. Moreover, the control unit switches the ejection of gas from the one gas nozzle group to the other gas nozzle group when a given switching condition is detected.

According to the present disclosure, gas can be stably discharged into the treatment liquid stored in the treatment tank.

FIG. 1 is a schematic block diagram showing a configuration of a substrate processing system according to an embodiment of the present invention. FIG. 2 is a schematic block diagram showing the configuration of the etching processing apparatus according to the embodiment. FIG. 3 is a perspective view showing the configuration of the first gas nozzle group according to the embodiment. FIG. 4 is a perspective view showing the configuration of the second gas nozzle group according to the embodiment. FIG. 5 is a schematic block diagram showing the configuration of piping connected to a gas discharge portion according to the embodiment. FIG. 6 is a cross-sectional view showing an example of the arrangement of the first gas nozzle group and the second gas nozzle group according to the embodiment. FIG. 7 is a side view showing an example of the arrangement of the first gas nozzle group and the second gas nozzle group according to the embodiment. FIG. 8 is a diagram showing changes in the gas supply pressure of the inert gas in the first gas nozzle group and the second gas nozzle group according to the embodiment. FIG. 9 is a schematic block diagram showing a configuration of piping connected to a gas discharge portion according to the first modification of the embodiment. FIG. 10 is a cross-sectional view showing an example of an arrangement of the first gas nozzle group and the second gas nozzle group according to the second modification of the embodiment. FIG. 11 is a cross-sectional view showing an example of an arrangement of the first gas nozzle group and the second gas nozzle group according to the third modification of the embodiment. FIG. 12 is a side view showing an example of an arrangement of the first gas nozzle group and the second gas nozzle group according to the fourth modification of the embodiment. FIG. 13 is a diagram showing a transition of the gas supply pressure of the inert gas in the first gas nozzle group and the second gas nozzle group according to the fifth modification of the embodiment. FIG. 14 is a diagram showing transitions in the gas supply pressure of the inert gas in the first gas nozzle group and the second gas nozzle group according to the sixth modification of the embodiment. FIG. 15 is a diagram showing changes in the gas supply pressure of the inert gas in the first gas nozzle group and the second gas nozzle group according to the seventh modification of the embodiment. FIG. 16 is a diagram showing transitions in the gas supply pressure of the inert gas in the first gas nozzle group and the second gas nozzle group according to the eighth modification of the embodiment. FIG. 17 is a flowchart showing a procedure for substrate processing according to the embodiment. FIG. 18 is a flowchart showing the processing procedure of the nozzle switching process according to the embodiment. FIG. 19 is a flowchart showing a processing procedure of the nozzle switching process according to the fifth modified example of the embodiment. FIG. 20 is a flowchart showing a processing procedure for substrate processing according to the sixth modification of the embodiment. FIG. 21 is a flowchart showing a processing procedure for substrate processing according to the seventh modification of the embodiment. FIG. 22 is a flowchart showing a processing procedure for substrate processing according to the eighth modification of the embodiment.

Embodiments of the substrate processing apparatus and substrate processing method disclosed herein will be described in detail below with reference to the attached drawings. Note that the present disclosure is not limited to the embodiments described below. It should be noted that the drawings are schematic, and the dimensional relationships and ratios of each element may differ from reality. Furthermore, there may be parts in which the dimensional relationships and ratios differ between the drawings.

Conventionally, a technique is known in which multiple substrates are etched at the same time by immersing the substrates in a processing liquid stored in a processing tank. In addition, in such etching processes, in order to improve the temperature uniformity in the processing tank and the efficiency of replacing the chemical liquid, gas may be discharged from a gas nozzle located at the bottom of the processing tank into the processing liquid, forming an upward flow in the processing tank.

However, in the above-mentioned conventional technology, the etched components inside the gas nozzle could crystallize, causing the gas nozzle to become clogged. This could lead to a decrease in temperature uniformity in the processing tank and a decrease in the efficiency of replacing the chemical solution, as the gas could not be stably discharged into the processing solution.

Therefore, there is a need to develop a technology that can overcome the above-mentioned problems and stably eject gas into the processing liquid stored in the processing tank.

<Configuration of Substrate Processing System>
First, a configuration of a substrate processing system 1 according to an embodiment will be described with reference to Fig. 1. Fig. 1 is a schematic block diagram showing the configuration of the substrate processing system 1 according to an embodiment. The substrate processing system 1 is an example of a substrate processing apparatus.

As shown in FIG. 1, the substrate processing system 1 according to the embodiment includes a carrier loading/unloading section 2, a lot formation section 3, a lot placement section 4, a lot transport section 5, a lot processing section 6, and a control section 7.

The carrier loading/unloading section 2 includes a carrier stage 20, a carrier transport mechanism 21, carrier stocks 22 and 23, and a carrier placement table 24.

The carrier stage 20 holds multiple carriers 9 transported from outside. The carrier 9 is a container that holds multiple (e.g., 25) wafers W arranged vertically in a horizontal position. The carrier transport mechanism 21 transports the carriers 9 between the carrier stage 20, the carrier stocks 22 and 23, and the carrier mounting table 24.

From the carrier 9 placed on the carrier mounting table 24, a plurality of unprocessed wafers W are transferred to the lot processing section 6 by the substrate transfer mechanism 30 described below. In addition, a plurality of processed wafers W are transferred from the lot processing section 6 to the carrier 9 placed on the carrier mounting table 24 by the substrate transfer mechanism 30.

The lot formation section 3 has a substrate transport mechanism 30 and forms lots. A lot is made up of multiple (e.g., 50) wafers W that are combined and processed simultaneously from wafers W housed in one or more carriers 9. The multiple wafers W that form one lot are arranged at regular intervals with their plate surfaces facing each other.

The substrate transfer mechanism 30 transfers multiple wafers W between the carrier 9 placed on the carrier placement table 24 and the lot placement section 4.

The lot placement unit 4 has a lot transport table 40 on which lots transported between the lot formation unit 3 and the lot processing unit 6 by the lot transport unit 5 are temporarily placed (on standby). The lot transport table 40 has an entrance side placement table 41 on which lots formed in the lot formation unit 3 are placed before being processed, and an exit side placement table 42 on which lots processed in the lot processing unit 6 are placed. On the entrance side placement table 41 and the exit side placement table 42, multiple wafers W for one lot are placed in an upright position, lined up front to back.

The lot transport section 5 has a lot transport mechanism 50, and transports lots between the lot placement section 4 and the lot processing section 6 and inside the lot processing section 6. The lot transport mechanism 50 has a rail 51, a moving body 52, and a substrate holder 53.

The rails 51 are arranged along the X-axis direction across the lot placement section 4 and the lot processing section 6. The moving body 52 is configured to be able to move along the rails 51 while holding multiple wafers W. The substrate holder 53 is arranged on the moving body 52 and holds multiple wafers W lined up in front of and behind each other in an upright position.

The lot processing section 6 performs processes such as etching, cleaning, and drying on one lot of multiple wafers W. The lot processing section 6 includes two etching processing devices 60, a cleaning processing device 70, a cleaning processing device 80, and a drying processing device 90, which are arranged side by side along a rail 51.

The etching processing device 60 performs etching processing on one lot of multiple wafers W in a batch. The cleaning processing device 70 performs cleaning processing on one lot of multiple wafers W in a batch. The cleaning processing device 80 performs cleaning processing on the substrate holder 53. The drying processing device 90 performs drying processing on one lot of multiple wafers W in a batch. Note that the numbers of the etching processing devices 60, cleaning processing devices 70, cleaning processing devices 80, and drying processing devices 90 are not limited to the example in FIG. 1.

The etching processing device 60 includes an etching processing tank 61 for the etching processing, a rinsing processing tank 62 for the rinsing processing, and substrate lifting mechanisms 63 and 64.

The etching tank 61 can accommodate one lot of wafers W arranged in an upright position, and stores a chemical liquid for etching (hereinafter also referred to as "etchant"). Details of the etching tank 61 will be described later.

The rinse processing tank 62 stores a processing liquid (deionized water, etc.) for the rinse processing. The substrate lifting mechanisms 63 and 64 hold multiple wafers W that form a lot in an upright position, lined up front and back.

The etching processing device 60 holds the lot transported by the lot transport unit 5 with the substrate lifting mechanism 63 and immerses it in the etching solution in the etching processing tank 61 to perform the etching process.

The lot that has been etched in the etching tank 61 is transported to the rinsing tank 62 by the lot transport unit 5. The etching processing device 60 then holds the transported lot with the substrate lifting mechanism 64 and immerses it in the rinsing liquid in the rinsing tank 62 to perform a rinsing process. The lot that has been rinsed in the rinsing tank 62 is transported by the lot transport unit 5 to the cleaning tank 71 of the cleaning processing device 70.

The cleaning processing device 70 includes a cleaning processing tank 71 for cleaning, a rinsing processing tank 72 for rinsing, and substrate lifting mechanisms 73 and 74. A cleaning chemical (hereinafter also referred to as "cleaning chemical") is stored in the cleaning processing tank 71 for cleaning. The cleaning chemical is, for example, SC-1 (a mixture of ammonia, hydrogen peroxide, and water).

A rinse processing liquid (deionized water, etc.) for the rinse processing is stored in the rinse processing tank 72. The substrate lifting mechanisms 73 and 74 hold multiple wafers W for one lot in an upright position lined up in front of and behind each other.

The cleaning processing device 70 holds the lot transported by the lot transport unit 5 with the substrate lifting mechanism 73 and performs cleaning processing by immersing the lot in the cleaning solution in the cleaning processing tank 71.

The lot that has been cleaned in the cleaning tank 71 is transported to the rinsing tank 72 by the lot transport unit 5. The cleaning device 70 then holds the transported lot with the substrate lifting mechanism 74 and immerses it in the rinsing liquid in the rinsing tank 72 to perform a rinsing process. The lot that has been rinsed in the rinsing tank 72 is transported by the lot transport unit 5 to the drying tank 91 of the drying device 90.

The drying processing device 90 has a drying processing tank 91 and a substrate lifting mechanism 92. A processing gas for the drying processing is supplied to the drying processing tank 91. The substrate lifting mechanism 92 holds a number of wafers W for one lot in an upright position, lined up front and back.

The drying processing device 90 holds the lot transported by the lot transport unit 5 with a substrate lifting mechanism 92 and performs a drying process using a processing gas for the drying process supplied into the drying processing tank 91. The lot that has been dried in the drying processing tank 91 is transported to the lot mounting unit 4 by the lot transport unit 5.

The cleaning processing device 80 performs a cleaning process on the substrate holder 53 of the lot transport mechanism 50 by supplying a cleaning processing liquid and then supplying a dry gas to the substrate holder 53.

The control unit 7 controls the operation of each part of the substrate processing system 1 (the carrier loading/unloading unit 2, the lot formation unit 3, the lot placement unit 4, the lot transport unit 5, the lot processing unit 6, etc.). The control unit 7 controls the operation of each part of the substrate processing system 1 based on signals from switches, various sensors, etc.

The control unit 7 includes a microcomputer having a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input/output ports, and various other circuits. The control unit 7 controls the operation of the substrate processing system 1 by reading and executing a program stored in a storage unit (not shown).

The control unit 7 has a computer-readable storage medium 8. The storage medium 8 stores the above-mentioned programs that control the various processes executed in the substrate processing system 1. The programs may be stored in the computer-readable storage medium 8, or may be installed in the storage medium 8 of the control unit 7 from another storage medium.

Examples of computer-readable storage media 8 include hard disks (HD), flexible disks (FD), compact disks (CD), magnetic optical disks (MO), and memory cards.

<Configuration of Etching Treatment Apparatus>
Next, a configuration of an etching processing apparatus 60 for performing an etching process on a wafer W will be described with reference to Fig. 2. Fig. 2 is a schematic block diagram showing a configuration of an etching processing apparatus 60 according to an embodiment.

The etching processing apparatus 60 includes an etching liquid supply unit 100 and a substrate processing unit 110. The etching liquid supply unit 100 supplies an etching liquid L to the substrate processing unit 110. The etching liquid L is an example of a processing liquid. The etching liquid L according to the embodiment is, for example, SC-1.

The etching solution supply unit 100 has an etching solution supply source 101, an etching solution supply path 102, and a flow rate regulator 103.

The etching liquid supply path 102 connects the etching liquid supply source 101 to the outer tank 112 of the etching treatment tank 61, and supplies the etching liquid L from the etching liquid supply source 101 to the outer tank 112.

The flow rate regulator 103 is disposed in the etching liquid supply path 102 and regulates the flow rate of the etching liquid L supplied to the outer tank 112. The flow rate regulator 103 includes an on-off valve, a flow rate control valve, a flow meter, etc.

The substrate processing unit 110 immerses the wafer W in the etching liquid L supplied from the etching liquid supply unit 100 and performs an etching process on the wafer W. The wafer W is an example of a substrate. The substrate processing unit 110, for example, etches a polysilicon film formed on the wafer W.

The substrate processing unit 110 includes an etching processing tank 61, a substrate lifting mechanism 63, a circulation path 120, and a gas discharge unit 130. The etching processing tank 61 includes a processing tank 111 and an outer tank 112.

The processing tank 111 is a tank for immersing the wafer W in the etching liquid L, and contains the etching liquid L for immersion. The processing tank 111 has an opening at the top, and the etching liquid L is stored up to the vicinity of the opening where the etching liquid L is poured.

In the processing tank 111, multiple wafers W are immersed in the etching solution L using a substrate lifting mechanism 63, and the wafers W are subjected to an etching process. The substrate lifting mechanism 63 is configured to be capable of raising and lowering, and holds multiple wafers W aligned in a vertical position, front to back (Y-axis direction).

The outer tank 112 is disposed outside the treatment tank 111 so as to surround the treatment tank 111, and receives the etching solution L flowing out from the opening of the treatment tank 111. As shown in FIG. 2, the liquid level in the outer tank 112 is maintained lower than the liquid level in the treatment tank 111.

The outer tank 112 and the treatment tank 111 are connected by a circulation path 120. One end of the circulation path 120 is connected to the bottom of the outer tank 112, and the other end of the circulation path 120 is connected to a treatment liquid supply nozzle 124 located in the treatment tank 111.

In the circulation path 120, a pump 121, a heater 122, and a filter 123 are arranged in this order from the outer bath 112 side. The pump 121 forms a circulation flow of the etching solution L that is sent from the outer bath 112 to the treatment bath 111 via the circulation path 120.

The etching solution L also overflows from the opening of the processing tank 111 and flows back into the outer tank 112. In this way, a circulating flow of the etching solution L is formed within the substrate processing unit 110. That is, this circulating flow is formed in the outer tank 112, the circulation path 120, and the processing tank 111.

The heater 122 adjusts the temperature of the etching liquid L circulating through the circulation path 120. The filter 123 filters the etching liquid L circulating through the circulation path 120. The processing liquid supply nozzle 124 is disposed below the wafer W in the processing tank 111 and supplies the etching liquid L to the processing tank 111.

The gas discharge unit 130 discharges an inert gas (such as nitrogen gas or argon gas) into the etching solution L stored in the processing tank 111. The inert gas is one example of a gas. The gas discharge unit 130 discharges the inert gas into the processing tank 111, thereby generating an upward flow of the etching solution L inside the processing tank 111.

The gas discharge section 130 has a first gas nozzle group 140 and a second gas nozzle group 150. The first gas nozzle group 140 and the second gas nozzle group 150 are disposed below the wafer W and the processing liquid supply nozzle 124 in the processing tank 111, and discharge bubbles of inert gas into the etching liquid L stored in the processing tank 111.

<Configuration of Gas Discharge Section>
Next, a detailed configuration of the gas discharge unit 130 according to the embodiment will be described with reference to Fig. 3 to Fig. 7. Fig. 3 is a perspective view showing the configuration of a first gas nozzle group 140 according to the embodiment.

As shown in FIG. 3, the first gas nozzle group 140 has multiple (six in the figure) gas nozzles 140-1 to 140-6. These gas nozzles 140-1 to 140-6 extend along the arrangement direction (i.e., the Y-axis direction) of the multiple wafers W (see FIG. 2). Furthermore, the gas nozzles 140-1 to 140-6 are arranged side by side in this order along the X-axis direction.

That is, gas nozzles 140-2 and 140-5 are positioned radially inward of the wafer W relative to gas nozzles 140-1 and 140-6, and gas nozzles 140-3 and 140-4 are positioned radially inward of the wafer W relative to gas nozzles 140-2 and 140-5.

In addition, a gas supply path 141 is connected to the first gas nozzle group 140. The gas supply path 141 has a gas supply path 141a, a gas supply path 141b, and a gas supply path 141c.

The gas supply path 141a has a portion that extends vertically and connects the gas nozzles 140-1 and 140-6 to the inert gas supply source 160 (see FIG. 5). That is, the inert gas is supplied to the gas nozzles 140-1 and 140-6 using the common gas supply path 141a.

Gas supply path 141b has a portion that extends vertically and connects gas nozzles 140-2 and 140-5 to inert gas supply source 160. That is, inert gas is supplied to gas nozzles 140-2 and 140-5 using common gas supply path 141b.

The gas supply path 141c has a portion that extends vertically and connects the gas nozzles 140-3 and 140-4 to the inert gas supply source 160. That is, the inert gas is supplied to the gas nozzles 140-3 and 140-4 using the common gas supply path 141c.

Note that, although this disclosure shows an example in which six gas nozzles 140-1 to 140-6 are provided in the first gas nozzle group 140, the number of gas nozzles provided in the first gas nozzle group 140 is not limited to six and may be two, four, etc.

Figure 4 is a perspective view showing the configuration of the second gas nozzle group 150 according to the embodiment.

As shown in FIG. 4, the second gas nozzle group 150 has multiple (six in the figure) gas nozzles 150-1 to 150-6. The gas nozzles 150-1 to 150-6 extend along the arrangement direction (i.e., the Y-axis direction) of the multiple wafers W (see FIG. 2). The gas nozzles 150-1 to 150-6 are also arranged side by side in the X-axis direction in this order.

That is, gas nozzles 150-2 and 150-5 are positioned radially inward of the wafer W relative to gas nozzles 150-1 and 150-6, and gas nozzles 150-3 and 150-4 are positioned radially inward of the wafer W relative to gas nozzles 150-2 and 150-5.

The second gas nozzle group 150 is connected to a gas supply path 151. The gas supply path 151 has a gas supply path 151a, a gas supply path 151b, and a gas supply path 151c.

The gas supply path 151a has a portion that extends vertically and connects the gas nozzles 150-1 and 150-6 to the inert gas supply source 160 (see FIG. 5). That is, the inert gas is supplied to the gas nozzles 150-1 and 150-6 using the common gas supply path 151a.

Gas supply path 151b has a portion that extends vertically and connects gas nozzles 150-2 and 150-5 to inert gas supply source 160. That is, inert gas is supplied to gas nozzles 150-2 and 150-5 using common gas supply path 151b.

The gas supply path 151c has a portion extending in the vertical direction and connects the gas nozzles 150-3 and 150-4 to the inert gas supply source 160.
An inert gas is supplied to 150-4 through a common gas supply path 151c.

Note that, although this disclosure shows an example in which six gas nozzles 150-1 to 150-6 are provided in the second gas nozzle group 150, the number of gas nozzles provided in the second gas nozzle group 150 is not limited to six and may be two, four, etc.

Figure 5 is a schematic block diagram showing the configuration of the piping connected to the gas discharge unit 130 according to the embodiment. As shown in Figure 5, the inert gas supplied to the gas discharge unit 130 is supplied from an inert gas supply source 160.

A pressure gauge 162 is provided in the gas supply path 161 extending from the inert gas supply source 160. The pressure gauge 162 measures the pressure of the inert gas flowing through the gas supply path 161. In addition, the gas supply path 161 branches into the gas supply path 141 and the gas supply path 151 downstream of the pressure gauge 162.

A flow regulator 142 is provided in the gas supply path 141 branching off from the gas supply path 161. The flow regulator 142 adjusts the amount of inert gas supplied to the first gas nozzle group 140. The flow regulator 142 has an on-off valve, a flow control valve, a flow meter, etc.

An open passage 143 is connected downstream of the flow regulator 142 in the gas supply passage 141, and the open passage 143 is connected to the external atmosphere via a flow regulator 144.

Gas supply path 141 branches into gas supply path 141a, gas supply path 141b, and gas supply path 141c downstream of the connection with open path 143. Gas supply path 141a is connected to gas nozzles 140-1 and 140-6 (see FIG. 3), gas supply path 141b is connected to gas nozzles 140-2 and 140-5 (see FIG. 3), and gas supply path 141c is connected to gas nozzles 140-3 and 140-4 (see FIG. 3).

That is, in the embodiment, the flow rates of the inert gas supplied to all of the gas nozzles 140-1 to 140-6 of the first gas nozzle group 140 are collectively adjusted by a common flow rate regulator 142.

In addition, a flow regulator 152 is provided in the gas supply path 151 branched off from the gas supply path 161. The flow regulator 152 adjusts the amount of inert gas supplied to the second gas nozzle group 150. The flow regulator 152 has an on-off valve, a flow control valve, a flow meter, etc.

An open passage 153 is connected downstream of the flow regulator 152 in the gas supply passage 151, and the open passage 153 is connected to the external atmosphere via a flow regulator 154.

Gas supply path 151 branches into gas supply path 151a, gas supply path 151b, and gas supply path 151c downstream of the connection with open path 153. Gas supply path 151a is connected to gas nozzles 150-1 and 150-6 (see FIG. 4), gas supply path 151b is connected to gas nozzles 150-2 and 150-5 (see FIG. 4), and gas supply path 151c is connected to gas nozzles 150-3 and 150-4 (see FIG. 4).

That is, in the embodiment, the flow rates of the inert gas supplied to all the gas nozzles 150-1 to 150-6 of the second gas nozzle group 150 are collectively adjusted by a common flow rate regulator 152.

FIG. 6 is a cross-sectional view showing an example of the arrangement of the first gas nozzle group 140 and the second gas nozzle group 150 according to an embodiment, and FIG. 7 is a side view showing an example of the arrangement of the first gas nozzle group 140 and the second gas nozzle group 150 according to an embodiment.

As shown in Figures 6 and 7, the gas nozzles 140-1 to 140-6 of the first gas nozzle group 140 are provided with multiple discharge ports H along the extension direction of the gas nozzles 140-1 to 140-6, i.e., along the arrangement direction of the multiple wafers W.

Similarly, the gas nozzles 150-1 to 150-6 of the second gas nozzle group 150 are provided with multiple discharge ports H along the extension direction of the gas nozzles 150-1 to 150-6, i.e., along the arrangement direction of the multiple wafers W.

The multiple discharge ports H are arranged at positions between adjacent wafers W in the arrangement direction of the multiple wafers W so that the inert gas supplied from the inert gas supply source 160 (see FIG. 5) enters between the adjacent wafers W (see FIG. 2).

Furthermore, the multiple discharge ports H are arranged, for example, to correspond to all the gaps in the multiple wafers W. That is, for example, if one lot is made up of 50 wafers W, gas nozzles 140-1 to 140-6 and gas nozzles 150-1 to 150-6 are each provided with 49 discharge ports H.

As shown in FIG. 6, multiple discharge ports H are provided in the lower half of the cylindrical gas nozzles 140-1 to 140-6 and gas nozzles 150-1 to 150-6. This makes it possible to prevent the etching liquid L (see FIG. 2) from penetrating into the interiors of the gas nozzles 140-1 to 140-6 and gas nozzles 150-1 to 150-6.

The multiple outlets H are provided below the sides of the gas nozzles 140-1 to 140-6 and the gas nozzles 150-1 to 150-6 and above the lower parts of the gas nozzles 140-1 to 140-6 and the gas nozzles 150-1 to 150-6.

This allows the inert gas to be ejected in the same direction, compared to when the ejection port H is provided below the gas nozzles 140-1 to 140-6 and the gas nozzles 150-1 to 150-6.

In the embodiment, as shown in FIG. 6, the gas nozzles 150-1 to 150-6 of the second gas nozzle group 150 are arranged in line with the gas nozzles 140-1 to 140-6 of the first gas nozzle group 140 in the up-down direction. For example, the gas nozzles 150-1 to 150-6 are arranged so as to be in contact with the lower parts of the gas nozzles 140-1 to 140-6, respectively.

This allows the inert gas ejection positions of the first gas nozzle group 140 and the second gas nozzle group 150 to be aligned in the direction in which the gas nozzles are arranged side by side (the X-axis direction).

Gas nozzles 150-1 to 150-6 may be arranged so as not to come into contact with gas nozzles 140-1 to 140-6. Gas nozzles 150-1 to 150-6 may also be arranged so as to come into contact with the upper portions of gas nozzles 140-1 to 140-6, respectively.

In addition, in this disclosure, an example is shown in which the discharge port H is provided in the lower half of the gas nozzles 140-1 to 140-6 and 150-1 to 150-6, but the discharge port H may be provided in the upper half of the gas nozzles 140-1 to 140-6 and 150-1 to 150-6. In addition, the discharge port H may be provided on the side of the gas nozzles 140-1 to 140-6 and 150-1 to 150-6.

In addition, in the embodiment, as shown in FIG. 7, the multiple outlets H formed in the gas nozzles 150-1 to 150-6 are arranged at the same positions in a plan view as the multiple outlets H formed in the gas nozzles 140-1 to 140-6.

This allows the inert gas ejection positions of the first gas nozzle group 140 and the second gas nozzle group 150 to be aligned in the extension direction (Y-axis direction) of each gas nozzle.

<Inert gas discharge process>
Next, the details of the discharge process of the inert gas into the etching liquid L in the etching processing apparatus 60 described above will be described with reference to Fig. 8. Fig. 8 is a diagram showing the transition of the gas supply pressure of the inert gas in the first gas nozzle group 140 and the second gas nozzle group 150 according to the embodiment.

First, the control unit 7 (see FIG. 1) loads multiple wafers W (see FIG. 2) into the processing tank 111 (see FIG. 2) at time T1. The control unit 7 also opens the flow rate regulator 142 (see FIG. 5) at this time T1, thereby starting the ejection of inert gas from the first gas nozzle group 140 (see FIG. 5).

As a result, the gas supply pressure to the first gas nozzle group 140 measured by the pressure gauge 162 (see FIG. 5) reaches a given pressure value X at time T2, and is maintained at this pressure value X thereafter. Note that even after time T1, the flow rate regulator 152 (see FIG. 5) remains closed. As a result, no inert gas is ejected from the second gas nozzle group 150 (see FIG. 5).

On the other hand, during the inert gas ejection process that is performed from time T1, etching liquid L flows (backflows) into gas nozzles 140-1 to 140-6 (see FIG. 3) of the first gas nozzle group 140 from the ejection port H (see FIG. 6).

As a result, silica in the etching solution L is concentrated at the gas-liquid interface in the gas nozzles 140-1 to 140-6, and crystallization progresses as the solution dries. As crystallization progresses further, clogging occurs in the gas nozzles 140-1 to 140-6.

As a result, the gas supply pressure to the first gas nozzle group 140 gradually increases over time and becomes equal to or greater than the given first threshold value X1 at time T3.

Here, in the embodiment, the control unit 7 determines that a blockage has occurred in the first gas nozzle group 140 in which the gas supply pressure is equal to or greater than the first threshold value X1, and performs a process of switching the discharge nozzle from the first gas nozzle group 140 to the second gas nozzle group 150.

First, at time T3, the control unit 7 changes the flow rate regulator 142 from an open state to a closed state. Next, at time T4 when the gas supply pressure of the first gas nozzle group 140 becomes zero, the control unit 7 changes the flow rate regulator 152 from an open state to a closed state, thereby starting the ejection of inert gas from the second gas nozzle group 150.

As a result, the gas supply pressure to the second gas nozzle group 150 measured by the pressure gauge 162 becomes a given pressure value X at time T5, and is maintained at this pressure value X thereafter.

Next, at time T6, a given processing time after time T1, when the etching process of the multiple wafers W is completed, the control unit 7 changes the flow rate regulator 152 from the open state to the closed state. Then, at time T7, when the gas supply pressure of the second gas nozzle group 150 becomes zero, the control unit 7 unloads the multiple wafers W from the processing tank 111.

As described above, in the embodiment, in the process of discharging inert gas into the etching solution L, if the first gas nozzle group 140 becomes clogged, the discharge nozzles are switched from the first gas nozzle group 140 to the second gas nozzle group 150.

As a result, even if the first gas nozzle group 140 becomes clogged, the process of ejecting the inert gas into the etching solution L can be continued. Therefore, according to the embodiment, the inert gas can be stably ejected into the etching solution L stored in the processing tank 111.

In addition, in the embodiment, at time T3 when the discharge nozzles are switched from the first gas nozzle group 140 to the second gas nozzle group 150, the control unit 7 may open the first gas nozzle group 140 to the atmosphere by opening the flow rate regulator 144 (see FIG. 5).

This allows the etching solution L to be drawn into the inside of the gas nozzles 140-1 to 140-6, so that the crystals adhering to the inside of the gas nozzles 140-1 to 140-6 can be etched and cleaned with the drawn etching solution L.

That is, in the embodiment, the clogged first gas nozzle group 140 can be cleaned when it is not being used for the inert gas discharge process. As a result, even if the switched second gas nozzle group 150 becomes clogged, the discharge nozzles can be switched back to the cleaned first gas nozzle group 140.

Therefore, according to the embodiment, even if the second gas nozzle group 150 becomes clogged, the process of ejecting the inert gas into the etching solution L can be continued, so that the inert gas can be ejected more stably into the etching solution L stored in the processing tank 111.

In addition, in an embodiment, at time T1 when the etching process of the multiple wafers W is started, the control unit 7 may open the second gas nozzle group 150 to the atmosphere by maintaining the flow rate regulator 152 in a closed state and opening the flow rate regulator 154 (see FIG. 5).

This allows the etching solution L to be drawn into the inside of the gas nozzles 150-1 to 150-6, so that the crystals that have adhered to the inside of the gas nozzles 150-1 to 150-6 during previous use can be etched and cleaned with the etching solution L that has been drawn into them.

Therefore, according to the embodiment, the second gas nozzle group 150 can be prevented from being clogged with silicon crystals, and the inert gas can be more stably discharged into the etching solution L stored in the processing tank 111.

In this manner, in the embodiment, the etching solution L may be drawn into the gas nozzle group that is not being used for the inert gas ejection process, and the gas nozzle group may be cleaned. This makes it possible to prevent clogging when the ejection nozzle is switched to the gas nozzle group, and therefore makes it possible to eject the inert gas more stably into the etching solution L stored in the processing tank 111.

In addition, in the embodiment, as shown in FIG. 6, the piping diameter of the gas nozzles 140-1 to 140-6 of the first gas nozzle group 140 and the piping diameter of the gas nozzles 150-1 to 150-6 of the second gas nozzle group 150 may be approximately equal.

As a result, even when switching between the first gas nozzle group 140 and the second gas nozzle group 150, the inert gas can be ejected at approximately the same flow rate into the etching solution L. Therefore, according to the embodiment, even when switching between the first gas nozzle group 140 and the second gas nozzle group 150, a stable etching process can be performed.

Note that the present disclosure is not limited to the case where the piping diameter of the gas nozzles 140-1 to 140-6 of the first gas nozzle group 140 is approximately equal to the piping diameter of the gas nozzles 150-1 to 150-6 of the second gas nozzle group 150. For example, the piping diameter of the gas nozzles 150-1 to 150-6 of the second gas nozzle group 150 may be smaller than the piping diameter of the gas nozzles 140-1 to 140-6 of the first gas nozzle group 140.

<Modification 1>
Next, various modified examples of the substrate processing system 1 according to the embodiment will be described with reference to Fig. 9 to Fig. 16. Fig. 9 is a schematic block diagram showing the configuration of piping connected to a gas discharge unit 130 according to Modification 1 of the embodiment.

In the various modified examples below, the same parts as in the embodiment are designated by the same reference numerals, and redundant explanations will be omitted.

In variant 1, an inert gas is supplied individually to each of the multiple gas supply paths 141a to 141c, and an inert gas is supplied individually to each of the multiple gas supply paths 151a to 151c.

Specifically, as shown in FIG. 9, a gas supply path 161 extending from an inert gas supply source 160 branches into gas supply paths 161a, 161b, and 161c. A pressure gauge 162a is provided in the gas supply path 161a.

The pressure gauge 162a measures the pressure of the inert gas flowing through the gas supply line 161a. The gas supply line 161a branches into the gas supply line 141a and the gas supply line 151a downstream of the pressure gauge 162a.

A flow rate regulator 142a is provided in the gas supply path 141a branching off from the gas supply path 161a. The flow rate regulator 142a adjusts the amount of inert gas supplied to the gas nozzles 140-1 and 140-6 of the first gas nozzle group 140 (see FIG. 3).

An open passage 143a is connected to the downstream side of the flow regulator 142a in the gas supply passage 141a, and the open passage 143a is connected to the external atmosphere via a flow regulator 144a.

In addition, a flow rate regulator 152a is provided in the gas supply path 151a branching off from the gas supply path 161a. The flow rate regulator 152a regulates the amount of inert gas supplied to the gas nozzles 150-1 and 150-6 (see FIG. 4) of the second gas nozzle group 150.

An open passage 153a is connected to the downstream side of the flow regulator 152a in the gas supply passage 151a, and the open passage 153a is connected to the external atmosphere via a flow regulator 154a.

In addition, a pressure gauge 162b is provided in gas supply path 161b branching off from gas supply path 161. Such pressure gauge 162b measures the pressure of the inert gas flowing through gas supply path 161b. In addition, gas supply path 161b branches off into gas supply path 141b and gas supply path 151b downstream of pressure gauge 162b.

A flow rate regulator 142b is provided in the gas supply line 141b branching off from the gas supply line 161b. The flow rate regulator 142b adjusts the amount of inert gas supplied to the gas nozzles 140-2 and 140-5 (see FIG. 3) of the first gas nozzle group 140.

An open passage 143b is connected to the downstream side of the flow regulator 142b in the gas supply passage 141b, and the open passage 143b is connected to the external atmosphere via a flow regulator 144b.

In addition, a flow rate regulator 152b is provided in the gas supply line 151b branching off from the gas supply line 161b. The flow rate regulator 152b regulates the amount of inert gas supplied to the gas nozzles 150-2 and 150-5 (see FIG. 4) of the second gas nozzle group 150.

An open passage 153b is connected to the downstream side of the flow regulator 152b in the gas supply passage 151b, and the open passage 153b is connected to the external atmosphere via a flow regulator 154b.

In addition, a pressure gauge 162c is provided in gas supply path 161c branching off from gas supply path 161. Such pressure gauge 162c measures the pressure of the inert gas flowing through gas supply path 161c. In addition, gas supply path 161c branches off into gas supply path 141c and gas supply path 151c downstream of pressure gauge 162c.

A flow rate regulator 142c is provided in the gas supply line 141c branching off from the gas supply line 161c. The flow rate regulator 142c regulates the amount of inert gas supplied to the gas nozzles 140-3 and 140-4 of the first gas nozzle group 140 (see FIG. 3).

An open passage 143c is connected to the downstream side of the flow regulator 142c in the gas supply passage 141c, and the open passage 143c is connected to the external atmosphere via a flow regulator 144c.

In addition, a flow rate regulator 152c is provided in the gas supply line 151c branching off from the gas supply line 161c. The flow rate regulator 152c regulates the amount of inert gas supplied to the gas nozzles 150-3 and 150-4 (see FIG. 4) of the second gas nozzle group 150.

An open passage 153c is connected to the downstream side of the flow regulator 152c in the gas supply passage 151c, and the open passage 153c is connected to the external atmosphere via a flow regulator 154c.

In variant 1 having such a piping configuration, the control unit 7 (see FIG. 1) can switch the discharge nozzles between gas nozzles 140-1 and 140-6 of the first gas nozzle group 140 and gas nozzles 150-1 and 150-6 of the second gas nozzle group 150.

Specifically, in the same manner as in the above-described embodiment, in Modification 1, the control unit 7 opens the flow regulator 142a and ejects the inert gas from the gas nozzles 140-1 and 140-6 into the etching solution L. The gas supply pressure of this inert gas is measured using the pressure gauge 162a.

When gas nozzles 140-1 and 140-6 become clogged and the gas supply pressure becomes equal to or greater than the first threshold value X1, the control unit 7 closes the flow rate regulator 142a and opens the flow rate regulator 152a. This makes it possible to switch the discharge nozzle from gas nozzles 140-1 and 140-6 to gas nozzles 150-1 and 150-6.

Furthermore, the control unit 7 opens the gas nozzles 140-1 and 140-6 to the atmosphere by opening the flow rate regulator 144a. This allows the etching solution L to be drawn into the inside of the gas nozzles 140-1 and 140-6, so that the inside of the gas nozzles 140-1 and 140-6 can be cleaned.

Furthermore, in the first modification, similarly to the above, the control unit 7 can switch the discharge nozzles between the gas nozzles 140-2 and 140-5 of the first gas nozzle group 140 and the gas nozzles 150-2 and 150-5 of the second gas nozzle group 150.

Furthermore, in the first modification, similarly to the above, the control unit 7 can switch the discharge nozzles between the gas nozzles 140-3 and 140-4 of the first gas nozzle group 140 and the gas nozzles 150-3 and 150-4 of the second gas nozzle group 150.

As described above, the present disclosure is not limited to the case where all the gas nozzles of the first gas nozzle group 140 and the second gas nozzle group 150 are controlled collectively, but each individual gas nozzle can be controlled independently.

In addition, in the first modified example, six gas nozzles are divided into three groups and each group is controlled independently, but the present disclosure is not limited to such an example, and for example, all six gas nozzles may be controlled independently.

<Modifications 2 and 3>
10 and 11 are cross-sectional views showing examples of the arrangement of the first gas nozzle group 140 and the second gas nozzle group 150 according to Modifications 2 and 3 of the embodiment.

The second gas nozzle group 150 of the present disclosure is not limited to being arranged vertically next to the first gas nozzle group 140 as shown in FIG. 6, but may be arranged horizontally next to the first gas nozzle group 140 as shown in FIG. 10.

Also, as shown in FIG. 11, the second gas nozzle group 150 of the present disclosure may be arranged in a staggered manner (i.e., diagonally) relative to the first gas nozzle group 140.

<Modification 4>
12 is a side view showing an example of the arrangement of first gas nozzle group 140 and second gas nozzle group 150 according to Modification 4 of the embodiment. As shown in Fig. 12, the multiple outlets H formed in gas nozzles 150-1 to 150-6 may be arranged at different positions in a plan view with respect to the multiple outlets H formed in gas nozzles 140-1 to 140-6.

This makes it possible to prevent the ejected inert gas from entering the upper first gas nozzle group 140 when ejecting the inert gas from the lower second gas nozzle group 150.

<Modification 5>
FIG. 13 is a diagram showing transitions of the gas supply pressure of the inert gas in the first gas nozzle group 140 and the second gas nozzle group 150 according to the fifth modification of the embodiment.

In the fifth modification, the control unit 7 (see FIG. 1) first loads a plurality of wafers W (see FIG. 2) into the processing tank 111 (see FIG. 2) at time T11. The control unit 7 also opens the flow rate regulator 142 (see FIG. 5) at this time T11, thereby starting the ejection of the inert gas from the first gas nozzle group 140 (see FIG. 5).

As a result, the gas supply pressure to the first gas nozzle group 140 measured by the pressure gauge 162 (see FIG. 5) reaches a given pressure value X at time T12, and is maintained at this pressure value X thereafter. Note that even after time T11, the flow rate regulator 152 (see FIG. 5) remains closed. As a result, no inert gas is ejected from the second gas nozzle group 150 (see FIG. 5).

On the other hand, during the inert gas ejection process that is performed from time T11, clogging occurs in the gas nozzles 140-1 to 140-6. As a result, the gas supply pressure to the first gas nozzle group 140 gradually increases over time, and at time T13, it becomes equal to or greater than the given first threshold value X1.

Then, at time T13, the control unit 7 changes the flow rate regulator 142 from the open state to the closed state, and also changes the flow rate regulator 152 from the open state to the closed state. This stops the ejection of inert gas from the first gas nozzle group 140 and starts the ejection of inert gas from the second gas nozzle group 150.

As a result, the gas supply pressure to the second gas nozzle group 150 measured by the pressure gauge 162 becomes a given pressure value X at time T14, and is maintained at this pressure value X thereafter.

In addition, in the fifth modification, at time T13 when the discharge nozzles are switched from the first gas nozzle group 140 to the second gas nozzle group 150, the control unit 7 opens the first gas nozzle group 140 to the atmosphere by opening the flow rate regulator 144 (see FIG. 5).

This draws the etching solution L into the inside of the gas nozzles 140-1 to 140-6, and the crystals adhering to the inside of the gas nozzles 140-1 to 140-6 are etched and cleaned with the drawn etching solution L.

Next, when the etching process of the multiple wafers W is completed at time T15, a given processing time after time T11, the control unit 7 changes the flow rate regulator 152 from the open state to the closed state. Then, at time T16, when the gas supply pressure of the second gas nozzle group 150 becomes zero, the control unit 7 unloads the multiple wafers W from the processing tank 111.

As described above, in variant 5, when a blockage occurs in the first gas nozzle group 140, a process of stopping the ejection of inert gas from the first gas nozzle group 140 and a process of starting the ejection of inert gas from the second gas nozzle group 150 are carried out in parallel.

This makes it possible to suppress a temporary decrease in the amount of inert gas discharged from the gas discharge unit 130 during the nozzle switching process from the first gas nozzle group 140 to the second gas nozzle group 150. Therefore, according to the fifth modification, the inert gas can be discharged more stably into the etching solution L stored in the processing tank 111.

<Modification 6>
FIG. 14 is a diagram showing transitions of the gas supply pressure of the inert gas in the first gas nozzle group 140 and the second gas nozzle group 150 according to the sixth modification of the embodiment.

In the sixth modification, the control unit 7 (see FIG. 1) first loads a plurality of wafers W (see FIG. 2) into the processing tank 111 (see FIG. 2) at time T21. The control unit 7 also opens the flow rate regulator 142 (see FIG. 5) at this time T21, thereby starting the ejection of the inert gas from the first gas nozzle group 140 (see FIG. 5).

As a result, the gas supply pressure to the first gas nozzle group 140 measured by the pressure gauge 162 (see FIG. 5) reaches a given pressure value X at time T22, and is maintained at this pressure value X thereafter. Note that even after time T21, the flow rate regulator 152 (see FIG. 5) remains closed. As a result, no inert gas is ejected from the second gas nozzle group 150 (see FIG. 5).

On the other hand, if any malfunction occurs in gas nozzles 140-1 to 140-6 during the inert gas ejection process that is performed from time T21, the gas supply pressure to the first gas nozzle group 140 will rise rapidly and reach or exceed the given second threshold value X2 at time T23.

The second threshold value X2 is a value greater than the first threshold value X1, for example, X2 = X + 2 (X1 - X).

Then, at time T23, the control unit 7 changes the flow rate regulator 142 from the open state to the closed state. Next, at time T24 when the gas supply pressure of the first gas nozzle group 140 becomes zero, the control unit 7 changes the flow rate regulator 152 from the open state to the closed state, thereby starting the ejection of inert gas from the second gas nozzle group 150.

As a result, the gas supply pressure to the second gas nozzle group 150 measured by the pressure gauge 162 becomes a given pressure value X at time T25, and is maintained at this pressure value X thereafter.

In addition, in the sixth modification, at time T23 when the discharge nozzles are switched from the first gas nozzle group 140 to the second gas nozzle group 150, the control unit 7 opens the first gas nozzle group 140 to the atmosphere by opening the flow regulator 144 (see FIG. 5).

This draws the etching solution L into the inside of the gas nozzles 140-1 to 140-6, and the crystals adhering to the inside of the gas nozzles 140-1 to 140-6 are etched and cleaned with the drawn etching solution L.

Next, when the etching process of the multiple wafers W is completed at time T26, which is a given processing time after time T21, the control unit 7 changes the flow rate regulator 152 from the open state to the closed state. Then, at time T27, when the gas supply pressure of the second gas nozzle group 150 becomes zero, the control unit 7 unloads the multiple wafers W from the processing tank 111.

As described above, in variant 6, when some malfunction occurs in the first gas nozzle group 140, causing a sudden increase in gas supply pressure and the gas supply pressure reaches or exceeds the second threshold value X2, the discharge nozzles are switched from the first gas nozzle group 140 to the second gas nozzle group 150.

In this way, in variant 6, even if a malfunction occurs in one of the gas nozzle groups, the inert gas can be stably discharged into the etching solution L stored in the processing tank 111 by switching the discharge nozzle to the other gas nozzle group.

<Modification 7>
FIG. 15 is a diagram showing transitions of the gas supply pressure of the inert gas in the first gas nozzle group 140 and the second gas nozzle group 150 according to the seventh modification of the embodiment.

In the seventh modification, the control unit 7 (see FIG. 1) first loads a plurality of wafers W (see FIG. 2) into the processing tank 111 (see FIG. 2) at time T31. The control unit 7 also opens the flow rate regulator 142 (see FIG. 5) at the time T31, thereby starting the ejection of the inert gas from the first gas nozzle group 140 (see FIG. 5).

As a result, the gas supply pressure to the first gas nozzle group 140 measured by the pressure gauge 162 (see FIG. 5) becomes a given pressure value X at time T32.

However, if the gas supply pressure does not stabilize at pressure value X due to some malfunction and increases further, even if the gas supply pressure exceeds the first threshold value X1, if it is immediately after the inert gas ejection has started, the control unit 7 will continue ejection from the first gas nozzle group 140.

For example, the control unit 7 continues to eject inert gas from the first gas nozzle group 140 from time T31, when the ejection of inert gas begins, until time T33, when a given threshold value (e.g., 120 seconds) has elapsed, even if the gas supply pressure becomes equal to or greater than the first threshold value X1.

This makes it possible to prevent the nozzle switching process from being performed when the gas supply pressure is not stable immediately after the inert gas starts to be ejected and temporarily exceeds the first threshold value X1. Note that the process from time T33 onwards is the same as in the above embodiment, so a description thereof will be omitted.

<Modification 8>
FIG. 16 is a diagram showing transitions of the gas supply pressure of the inert gas in the first gas nozzle group 140 and the second gas nozzle group 150 according to the eighth modification of the embodiment.

In the eighth modification, the control unit 7 (see FIG. 1) first loads a plurality of wafers W (see FIG. 2) into the processing tank 111 (see FIG. 2) at time T41. The control unit 7 also opens the flow rate regulator 142 (see FIG. 5) at the time T41, thereby starting the ejection of the inert gas from the first gas nozzle group 140 (see FIG. 5).

As a result, the gas supply pressure to the first gas nozzle group 140 measured by the pressure gauge 162 (see FIG. 5) becomes a given pressure value X at time T42, and is maintained at this pressure value X thereafter. Note that even after time T41, the flow rate regulator 152 (see FIG. 5) remains closed. As a result, no inert gas is ejected from the second gas nozzle group 150 (see FIG. 5).

In the eighth modification, the control unit 7 performs the nozzle switching process even if the gas supply pressure is not equal to or greater than the first threshold value X1 at time T43. This time T43 is the time when a given threshold time (e.g., 3600 seconds) has elapsed since time T41, when the ejection of the inert gas started.

In this way, the control unit 7 changes the flow rate regulator 142 from an open state to a closed state at time T43. Next, at time T44 when the gas supply pressure of the first gas nozzle group 140 becomes zero, the control unit 7 changes the flow rate regulator 152 from an open state to a closed state, thereby starting the ejection of inert gas from the second gas nozzle group 150.

As a result, the gas supply pressure to the second gas nozzle group 150 measured by the pressure gauge 162 becomes a given pressure value X at time T45, and is maintained at this pressure value X thereafter.

In addition, in the eighth modified example, at time T43 when the discharge nozzles are switched from the first gas nozzle group 140 to the second gas nozzle group 150, the control unit 7 opens the first gas nozzle group 140 to the atmosphere by opening the flow rate regulator 144 (see FIG. 5).

This draws the etching solution L into the inside of the gas nozzles 140-1 to 140-6, and the crystals adhering to the inside of the gas nozzles 140-1 to 140-6 are etched and cleaned with the drawn etching solution L.

Next, at time T46, a given processing time after time T41, when the etching process of the multiple wafers W is completed, the control unit 7 changes the flow rate regulator 152 from the open state to the closed state. Then, at time T47, when the gas supply pressure of the second gas nozzle group 150 becomes zero, the control unit 7 unloads the multiple wafers W from the processing tank 111.

As described above, in variant 8, when the elapsed time during which inert gas is ejected from one gas nozzle group (here, the first gas nozzle group 140) reaches or exceeds a given threshold time, the ejection nozzles are switched to the other gas nozzle group (here, the second gas nozzle group 150).

This can prevent clogging from occurring in the first gas nozzle group 140 and the second gas nozzle group 150. Therefore, according to the eighth modification, the inert gas can be ejected more stably into the etching solution L stored in the processing tank 111.

In the embodiment and various modified examples described so far, an example has been shown in which the pressure gauge 162 is used to determine whether the gas nozzle group is clogged or not, but the process of determining whether the gas nozzle group is clogged or not is not limited to being performed using the pressure gauge 162.

For example, the presence or absence of clogging of the gas nozzle group may be determined using a hydrohead pressure gauge that measures the hydrohead pressure of the etching liquid L stored in the processing tank 111. For example, when the hydrohead pressure of the etching liquid L measured by such a hydrohead pressure gauge becomes equal to or greater than a given third threshold value, the control unit 7 may determine that clogging has occurred in the gas nozzle group that ejects the inert gas, and may perform a nozzle switching process.

As a result, even if one of the gas nozzle groups becomes clogged, the ejection nozzles can be switched to the other gas nozzle group, allowing the inert gas to be stably ejected into the etching solution L stored in the processing tank 111.

The substrate processing apparatus (substrate processing system 1) according to the embodiment includes a processing tank 111, a first gas nozzle group 140, a second gas nozzle group 150, and a control unit 7. The processing tank 111 processes a plurality of arranged substrates (wafers W) by immersing them in a processing liquid (etching liquid L). The first gas nozzle group 140 is disposed below the plurality of substrates (wafers W) inside the processing tank 111 and ejects gas into the processing liquid (etching liquid L) stored in the processing tank 111. The second gas nozzle group 150 is disposed adjacent to the first gas nozzle group 140 and ejects gas into the processing liquid (etching liquid L) stored in the processing tank 111. The control unit 7 controls each part. In addition, when a plurality of substrates (wafers W) are immersed in the processing liquid (etching liquid L) and processed, the control unit 7 ejects gas from one of the first gas nozzle group 140 and the second gas nozzle group 150 into the processing liquid (etching liquid L). Furthermore, when the control unit 7 detects a given switching condition, it switches the gas discharge from one gas nozzle group to the other gas nozzle group. This allows the inert gas to be stably discharged into the etching solution L stored in the processing tank 111.

In addition, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the switching condition is information on clogging of the gas nozzles included in one of the gas nozzle groups. This makes it possible to continue the process of ejecting the inert gas into the etching solution L even if a clog occurs in one of the gas nozzle groups.

In addition, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the gas nozzle clogging information is detected when the gas supply pressure of the gas nozzle becomes equal to or greater than a given first threshold value X1. This makes it possible to accurately detect that a clogging has occurred in one of the gas nozzle groups.

In addition, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the switching condition is detected when the gas supply pressure of the gas nozzles becomes equal to or greater than a given second threshold value X2 that is greater than the first threshold value X1. This allows the inert gas to be stably discharged into the etching solution L stored in the processing tank 111 even if a malfunction occurs in one of the gas nozzle groups.

In addition, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the gas nozzle clogging information is detected when the head pressure of the processing liquid (etchant L) stored in the processing tank 111 becomes equal to or greater than a given third threshold value. This makes it possible to accurately detect that a clogging has occurred in one of the gas nozzle groups.

In addition, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the switching condition is detected when the elapsed time during which gas is discharged from one of the gas nozzle groups is equal to or longer than a given threshold time. This makes it possible to prevent clogging from occurring in the first gas nozzle group 140 and the second gas nozzle group 150.

In addition, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the control unit 7 switches the gas discharge from one gas nozzle group to the other gas nozzle group, and then opens one gas nozzle group to the atmosphere. This allows the clogged gas nozzle group to be cleaned when it is not being used for the inert gas discharge process.

In addition, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the second gas nozzle group 150 is arranged vertically next to the first gas nozzle group 140. This allows the inert gas ejection positions of the first gas nozzle group 140 and the second gas nozzle group 150 to be aligned in the direction in which the gas nozzles are arranged side by side.

In addition, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the multiple discharge ports H formed in the second gas nozzle group 150 are arranged at the same positions in a plan view as the multiple discharge ports H formed in the first gas nozzle group 140. This allows the discharge positions of the inert gas in the first gas nozzle group 140 and the second gas nozzle group 150 to be aligned in the extension direction of each gas nozzle.

In addition, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the gas nozzles 150-1 to 150-6 included in the second gas nozzle group 150 have piping diameters that are approximately equal to those of the gas nozzles 140-1 to 140-6 included in the first gas nozzle group 140. As a result, even when switching between the first gas nozzle group 140 and the second gas nozzle group 150, the inert gas can be ejected at approximately the same flow rate.

<Substrate processing details>
Next, the substrate processing performed by the substrate processing system 1 according to the embodiment and various modifications will be described in detail with reference to Fig. 17 to Fig. 22. Fig. 17 is a flowchart showing a processing procedure for the substrate processing according to the embodiment.

First, the control unit 7 loads multiple wafers W into the processing tank 111 (step S101). Then, the control unit 7 ejects an inert gas from the first gas nozzle group 140 (step S102).

Next, the control unit 7 determines whether the gas supply pressure to the first gas nozzle group 140 is equal to or greater than the first threshold value X1 (step S103). If the gas supply pressure to the first gas nozzle group 140 is not equal to or greater than the first threshold value X1 (step S103, No), the control unit 7 determines whether a given processing time has elapsed since the start of the etching process of the multiple wafers W (step S104).

If the given processing time has elapsed (step S104, Yes), the control unit 7 stops the ejection of the inert gas (step S105), removes the multiple wafers W from the processing tank 111 (step S106), and ends the series of substrate processing operations.

On the other hand, if the given processing time has not elapsed (step S104, No), the control unit 7 returns to the processing of step S103.

In addition, in the process of step S103, if the gas supply pressure to the first gas nozzle group 140 is equal to or greater than the first threshold value X1 (step S103, Yes), the control unit 7 performs a nozzle switching process (step S107). This nozzle switching process is a process of switching the discharge nozzle from the first gas nozzle group 140 to the second gas nozzle group 150, and will be described in detail later.

Following this nozzle switching process, the control unit 7 determines whether the gas supply pressure to the second gas nozzle group 150 is equal to or greater than the first threshold value X1 (step S108). If the gas supply pressure to the second gas nozzle group 150 is not equal to or greater than the first threshold value X1 (step S108, No), the control unit 7 determines whether a given processing time has elapsed since the start of the etching process of the multiple wafers W (step S109).

If the given processing time has elapsed (step S109, Yes), the control unit 7 proceeds to the processing of step S105. On the other hand, if the given processing time has not elapsed (step S109, No), the control unit 7 returns to the processing of step S108.

In addition, in the process of step S108, if the gas supply pressure to the second gas nozzle group 150 is equal to or greater than the first threshold value X1 (step S108, Yes), the control unit 7 performs a nozzle switching process (step S110) and proceeds to the process of step S103.

Figure 18 is a flowchart showing the process steps of the nozzle switching process according to the embodiment. In the nozzle switching process, the control unit 7 first stops the ejection of inert gas from one of the gas nozzle groups that has been ejecting inert gas (step S121).

Next, the control unit 7 ejects the inert gas from the other gas nozzle group (step S122). The control unit 7 then draws the etching solution L into one of the gas nozzle groups to clean the other gas nozzle group (step S123), and ends the series of nozzle switching processes.

Figure 19 is a flowchart showing the processing procedure of the nozzle switching process according to the fifth modified example of the embodiment. In the nozzle switching process of the fifth modified example, the control unit 7 first stops the ejection of the inert gas from one of the gas nozzle groups that has been ejecting the inert gas (step S131).

In parallel with the process of step S131, the control unit 7 ejects the inert gas from the other gas nozzle group (step S132). Then, the control unit 7 draws the etching liquid L into the one gas nozzle group to clean the one gas nozzle group (step S133), and ends the series of nozzle switching processes.

Figure 20 is a flow chart showing the processing procedure for substrate processing according to the sixth modified embodiment. First, the control unit 7 loads a plurality of wafers W into the processing tank 111 (step S201). Then, the control unit 7 ejects an inert gas from the first gas nozzle group 140 (step S202).

Next, the control unit 7 determines whether the gas supply pressure to the first gas nozzle group 140 is equal to or greater than the second threshold value X2 (step S203). If the gas supply pressure to the first gas nozzle group 140 is not equal to or greater than the second threshold value X2 (step S203, No), the control unit 7 determines whether the gas supply pressure to the first gas nozzle group 140 is equal to or greater than the first threshold value X1 (step S204).

If the gas supply pressure to the first gas nozzle group 140 is not equal to or greater than the first threshold value X1 (step S204, No), the control unit 7 determines whether a given processing time has elapsed since the start of the etching process of the multiple wafers W (step S205).

If the given processing time has elapsed (step S205, Yes), the control unit 7 stops the ejection of the inert gas (step S206), removes the multiple wafers W from the processing tank 111 (step S207), and ends the series of substrate processing operations.

On the other hand, if the given processing time has not elapsed (step S205, No), the control unit 7 returns to the processing of step S203.

In addition, in the processing of step S203, if the gas supply pressure to the first gas nozzle group 140 is equal to or greater than the second threshold value X2 (step S203, Yes), the control unit 7 performs a nozzle switching process (step S208).

In addition, in the processing of step S204, if the gas supply pressure to the first gas nozzle group 140 is equal to or greater than the first threshold value X1 (step S204, Yes), the control unit 7 performs a nozzle switching process (step S208).

Following this nozzle switching process, the control unit 7 determines whether the gas supply pressure to the second gas nozzle group 150 is equal to or greater than the second threshold value X2 (step S209). If the gas supply pressure to the second gas nozzle group 150 is not equal to or greater than the second threshold value X2 (step S209, No), the control unit 7 determines whether the gas supply pressure to the second gas nozzle group 150 is equal to or greater than the first threshold value X1 (step S210).

If the gas supply pressure to the second gas nozzle group 150 is not equal to or greater than the first threshold value X1 (step S210, No), the control unit 7 determines whether a given processing time has elapsed since the start of the etching process of the multiple wafers W (step S211).

If the given processing time has elapsed (step S211, Yes), the control unit 7 proceeds to the processing of step S206. On the other hand, if the given processing time has not elapsed (step S211, No), the control unit 7 returns to the processing of step S209.

In addition, in the process of step S209, if the gas supply pressure to the second gas nozzle group 150 is equal to or greater than the second threshold value X2 (step S209, Yes), the control unit 7 performs a nozzle switching process (step S212) and proceeds to the process of step S203.

In addition, in the process of step S210, if the gas supply pressure to the second gas nozzle group 150 is equal to or greater than the first threshold value X1 (step S210, Yes), the control unit 7 performs a nozzle switching process (step S212) and proceeds to the process of step S203.

Figure 21 is a flow chart showing the processing procedure for substrate processing according to the seventh modified example of the embodiment. First, the control unit 7 loads a plurality of wafers W into the processing tank 111 (step S301). Then, the control unit 7 ejects an inert gas from the first gas nozzle group 140 (step S302).

Next, the control unit 7 determines whether the gas supply pressure to the first gas nozzle group 140 is equal to or greater than the first threshold value X1 (step S303). If the gas supply pressure to the first gas nozzle group 140 is not equal to or greater than the first threshold value X1 (step S303, No), the control unit 7 determines whether a given processing time has elapsed since the start of the etching process of the multiple wafers W (step S304).

If the given processing time has elapsed (step S304, Yes), the control unit 7 stops the ejection of the inert gas (step S305), removes the multiple wafers W from the processing tank 111 (step S306), and ends the series of substrate processing operations.

On the other hand, if the given processing time has not elapsed (step S304, No), the control unit 7 returns to the processing of step S303.

In addition, in the processing of step S303, if the gas supply pressure to the first gas nozzle group 140 is equal to or greater than the first threshold value X1 (step S303, Yes), the control unit 7 determines whether the first gas nozzle group 140 has just started ejection (step S307).

In the process of step S307, the control unit 7 determines whether a given threshold value (e.g., 120 seconds) has elapsed since the first gas nozzle group 140 started ejecting the inert gas.

If the first gas nozzle group 140 has just started discharging (step S307, Yes), the control unit 7 returns to the process of step S303. On the other hand, if the first gas nozzle group 140 has not just started discharging (step S307, No), the control unit 7 performs a nozzle switching process (step S308).

Next, the control unit 7 determines whether the gas supply pressure to the second gas nozzle group 150 is equal to or greater than the first threshold value X1 (step S309). If the gas supply pressure to the second gas nozzle group 150 is not equal to or greater than the first threshold value X1 (step S309, No), the control unit 7 determines whether a given processing time has elapsed since the start of the etching process of the multiple wafers W (step S310).

If the given processing time has elapsed (step S310, Yes), the control unit 7 proceeds to the processing of step S305. On the other hand, if the given processing time has not elapsed (step S310, No), the control unit 7 returns to the processing of step S309.

In addition, in the processing of step S309, if the gas supply pressure to the second gas nozzle group 150 is equal to or greater than the first threshold value X1 (step S309, Yes), the control unit 7 determines whether the second gas nozzle group 150 has just started ejection (step S311).

In the process of step S311, the control unit 7 determines whether a given threshold value (e.g., 120 seconds) has elapsed since the second gas nozzle group 150 started ejecting the inert gas.

If the second gas nozzle group 150 has just started ejection (step S311, Yes), the control unit 7 returns to the process of step S309. On the other hand, if the second gas nozzle group 150 has not just started ejection (step S311, No), the control unit 7 performs a nozzle switching process (step S312) and proceeds to the process of step S303.

Figure 22 is a flow chart showing the processing procedure for substrate processing according to the eighth modified example of the embodiment. First, the control unit 7 loads a plurality of wafers W into the processing tank 111 (step S401). Then, the control unit 7 ejects an inert gas from the first gas nozzle group 140 (step S402).

Next, the control unit 7 determines whether the gas supply pressure to the first gas nozzle group 140 is equal to or greater than the first threshold value X1 (step S403). If the gas supply pressure to the first gas nozzle group 140 is not equal to or greater than the first threshold value X1 (step S403, No), the control unit 7 determines whether a given discharge time has elapsed in the first gas nozzle group 140 (step S404).

In the process of step S404, the control unit 7 determines whether a given threshold time (e.g., 3600 seconds) has elapsed since the first gas nozzle group 140 started to eject the inert gas.

If the given discharge time has not elapsed for the first gas nozzle group 140 (step S404, No), the control unit 7 determines whether the given processing time has elapsed since the start of the etching process for the multiple wafers W (step S405).

If the given processing time has elapsed (step S405, Yes), the control unit 7 stops the ejection of the inert gas (step S406), removes the multiple wafers W from the processing tank 111 (step S407), and ends the series of substrate processing operations.

On the other hand, if the given processing time has not elapsed (step S405, No), the control unit 7 returns to the processing of step S403.

In addition, in the processing of step S403, if the gas supply pressure to the first gas nozzle group 140 is equal to or greater than the first threshold value X1 (step S403, Yes), the control unit 7 performs a nozzle switching process (step S408).

In addition, in the processing of step S404, if a given discharge time has elapsed for the first gas nozzle group 140 (step S404, Yes), the control unit 7 performs a nozzle switching process (step S408).

Following this nozzle switching process, the control unit 7 determines whether the gas supply pressure to the second gas nozzle group 150 is equal to or greater than the first threshold value X1 (step S409). If the gas supply pressure to the second gas nozzle group 150 is not equal to or greater than the first threshold value X1 (step S409, No), the control unit 7 determines whether a given discharge time has elapsed in the second gas nozzle group 150 (step S410).

In the process of step S410, the control unit 7 determines whether a given threshold time (e.g., 3600 seconds) has elapsed since the second gas nozzle group 150 started to eject the inert gas.

If the given discharge time has not elapsed for the second gas nozzle group 150 (step S410, No), the control unit 7 determines whether the given processing time has elapsed since the start of the etching process for the multiple wafers W (step S411).

If the given processing time has elapsed (step S411, Yes), the control unit 7 proceeds to the processing of step S406. On the other hand, if the given processing time has not elapsed (step S411, No), the control unit 7 returns to the processing of step S409.

In addition, in the process of step S409, if the gas supply pressure to the second gas nozzle group 150 is equal to or greater than the first threshold value X1 (step S409, Yes), the control unit 7 performs a nozzle switching process (step S412) and proceeds to the process of step S403.

In addition, in the process of step S410, if a given discharge time has elapsed for the second gas nozzle group 150 (step S410, Yes), the control unit 7 performs a nozzle switching process (step S412) and proceeds to the process of step S403.

The substrate processing method according to the embodiment includes a process of discharging gas (steps S102, S202, S302, S402) and a process of switching the discharge of gas (steps S107, S208, S308, S408) in the above-mentioned substrate processing apparatus (substrate processing system 1). In the process of discharging gas, when a plurality of substrates (wafers W) are immersed in the processing liquid (etching liquid L) and being processed, gas is discharged from one of the first gas nozzle group 140 and the second gas nozzle group 150 into the processing liquid (etching liquid L). In the process of switching the discharge of gas, when a given switching condition is detected, the discharge of gas is switched from one of the gas nozzle groups to the gas nozzle group. This allows the inert gas to be stably discharged into the etching liquid L stored in the processing tank 111.

Although the embodiments of the present disclosure have been described above, the present disclosure is not limited to the above embodiments, and various modifications are possible without departing from the spirit of the present disclosure. For example, the above embodiment shows a case where a polysilicon film formed on a wafer W is etched with SC-1, but the liquid processing performed on the wafer W is not limited to this example.

For example, the technology disclosed herein may be applied when an aluminum film formed on a wafer W is etched with a mixed acid treatment solution (such as a mixed acid of phosphoric acid, acetic acid, and nitric acid). The technology disclosed herein may also be applied when a seed layer formed on a wafer W is removed with SPM (a mixed solution of sulfuric acid and hydrogen peroxide).

As described above, when performing liquid processing on a wafer W, the technology disclosed herein can be applied to liquid processing in which there is a risk of clogging of the gas nozzle of the gas discharge section.

The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

1. Substrate processing system (an example of a substrate processing apparatus)
7 Control unit 61 Etching processing tank 111 Processing tank 130 Gas discharge unit 140 First gas nozzle group 140-1 to 140-6 Gas nozzles 150 Second gas nozzle group 150-1 to 150-6 Gas nozzles X1 First threshold value X2 Second threshold value W Wafer (an example of a substrate)
L Etching solution (an example of a treatment solution)
H outlet

Claims (10)

a processing tank for immersing the arranged substrates in a processing solution;
a first gas nozzle group disposed below the plurality of substrates within the processing tank and configured to eject gas into the processing liquid stored in the processing tank;
a second gas nozzle group disposed adjacent to the first gas nozzle group and configured to eject gas into the processing liquid stored in the processing tank;
A control unit for controlling each unit;
Equipped with
The control unit is
While the plurality of substrates are immersed in the processing liquid and processed, a gas is discharged from one of the first gas nozzle group and the second gas nozzle group into the processing liquid;
switching the discharge of gas from one of the gas nozzle groups to the other of the gas nozzle groups when a given switching condition is detected ;
The switching condition is information on clogging of a gas nozzle included in one of the gas nozzle groups.
Substrate processing equipment. The substrate processing apparatus according to claim 1 , wherein the information on the clogging of the gas nozzle is detected when a gas supply pressure of the gas nozzle becomes equal to or higher than a given first threshold value. The substrate processing apparatus according to claim 2 , wherein the switching condition is detected when a gas supply pressure of the gas nozzle becomes equal to or higher than a given second threshold value that is higher than the first threshold value. The substrate processing apparatus according to claim 2 , wherein the information on the clogging of the gas nozzle is detected when a head pressure of the processing liquid stored in the processing tank becomes equal to or higher than a third threshold value. 5. The substrate processing apparatus according to claim 1 , wherein the switching condition is detected when an elapsed time during which gas is discharged from one of the gas nozzle groups becomes equal to or longer than a given threshold time. 6. The substrate processing apparatus according to claim 1, wherein the control unit opens the one gas nozzle group to the atmosphere after switching the gas discharge from the one gas nozzle group to the other gas nozzle group. 7. The substrate processing apparatus of claim 1 , wherein the second gas nozzle group is arranged vertically next to the first gas nozzle group. The substrate processing apparatus according to claim 7 , wherein a plurality of outlets formed in the second gas nozzle group are arranged at the same positions as a plurality of outlets formed in the first gas nozzle group in a plan view. 9. The substrate processing apparatus according to claim 1 , wherein the gas nozzles included in the second gas nozzle group have a piping diameter substantially equal to that of the gas nozzles included in the first gas nozzle group. A substrate processing apparatus comprising: a processing tank for processing a plurality of arranged substrates by immersing them in a processing liquid; a first gas nozzle group disposed below the plurality of substrates inside the processing tank and for injecting a gas into the processing liquid stored in the processing tank; and a second gas nozzle group disposed adjacent to the first gas nozzle group and for injecting a gas into the processing liquid stored in the processing tank,
discharging a gas from one of the first gas nozzle group and the second gas nozzle group into the processing liquid while the plurality of substrates are immersed in the processing liquid and being processed;
switching the gas discharge from one gas nozzle group to the other gas nozzle group when a given switching condition is detected;
Including,
The switching condition is information on clogging of a gas nozzle included in one of the gas nozzle groups.
A method for processing a substrate.

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