JP7557656B2 - Probe unit, inspection device, inspection system, inspection method, and method for manufacturing semiconductor laser device - Google Patents

Description

The present disclosure relates to a probe unit, an inspection device, an inspection system, an inspection method, and a manufacturing method for a semiconductor laser device.

Conventionally, there is an inspection device that uses multiple probes to supply a current to an object to be inspected to inspect the characteristics of the object to be inspected (see, for example, Patent Document 1). In the inspection device described in Patent Document 1, the probe supported by the support has an elastic restoring force, so that when the support is moved toward the object to be inspected, the probe that comes into contact with the object to be inspected deforms, thereby preventing the probe from applying excessive force to the object to be inspected. Therefore, damage to the object to be inspected during inspection can be prevented.

JP 2015-4518 A

However, even with an inspection device such as that described in Patent Document 1, the object to be inspected may still be damaged.

The present disclosure is intended to solve such problems and aims to provide a probe unit and the like that can reduce damage to the test object during inspection.

In order to solve the above problem, one aspect of the probe unit according to the present disclosure is a probe unit including a part of a current circuit for supplying a current to a test object, the probe unit comprising: a first probe and a second probe included in the current circuit and having an elastic restoring force; a probe fixing member to which the first probe and the second probe are fixed; and a probe penetrating member disposed below the probe fixing member and spaced apart from the probe fixing member, the probe penetrating member having a first through hole and a second through hole through which the first probe and the second probe pass, respectively; the probe penetrating member has an opposing surface through which the first probe and the second probe pass and facing the test object; the portions of the first probe and the second probe that protrude downward from the opposing surface are movable in the vertical direction; and when the first probe and the second probe are not in contact with the test object, the lower end of the first probe is located below the lower end of the second probe.

In order to solve the above problem, one aspect of the inspection device disclosed herein comprises the probe unit, a stage having a mounting surface on which the test object is placed, and a height adjustment member arranged between the probe unit and the stage, the height adjustment member being arranged on the opposing surface of the probe unit.

In order to solve the above problems, one aspect of the inspection system disclosed herein comprises the inspection device and a transport device for transporting the inspection device, and transports the inspection device with the first probe and the second probe in contact with the object to be inspected.

In order to solve the above problem, one aspect of the inspection method disclosed herein is an inspection method for inspecting characteristics of an object to be inspected by supplying a current to the object to be inspected, the object to be inspected having a submount having an upper surface and an element having an element upper surface, arranged on the upper surface of the submount, and to which the current is supplied, the submount having a first electrode arranged on its upper surface, the element having a second electrode arranged on the element upper surface, the inspection method including a first contact step of bringing a first probe into contact with the first electrode, and a second contact step of bringing a second probe into contact with the second electrode after the first contact step, with the first probe in contact with the first electrode, the first probe and the second probe being included in a current circuit that supplies the current to the object to be inspected, and having an elastic restoring force.

In order to solve the above problem, another aspect of the inspection method according to the present disclosure is an inspection method for inspecting characteristics of an object to be inspected by supplying a current to the object to be inspected, the object to be inspected having a submount having an upper surface and an element having an element upper surface, arranged on the upper surface of the submount, and the element having a second electrode arranged on the element upper surface, the inspection method including a supply step of supplying the current to the object to be inspected while a first probe is in contact with the first electrode and a second probe is in contact with the second electrode, a second detachment step of separating the second probe from the second electrode after the supply step, and a first detachment step of separating the first probe from the first electrode after the second detachment step, the first probe and the second probe are included in a current circuit that supplies the current to the object to be inspected and have an elastic restoring force.

In order to solve the above problems, one aspect of the method for manufacturing a semiconductor laser device according to the present disclosure is a method for manufacturing a semiconductor laser device, comprising an assembly process for assembling the semiconductor laser device, and an inspection process for inspecting the semiconductor laser device as the inspection object using the inspection method, wherein the element is a semiconductor laser element.

The present disclosure makes it possible to provide a probe unit and the like that can reduce damage to the object being inspected.

1 is a schematic side view showing an overall configuration of an inspection device according to a first embodiment; FIG. 2 is a schematic top view showing a configuration of a probe unit according to the first embodiment. 1 is a first schematic cross-sectional view showing a configuration of a probe unit according to a first embodiment. FIG. 4 is a second schematic cross-sectional view showing the configuration of the probe unit according to the first embodiment. FIG. 4 is a schematic cross-sectional view showing the shape of a first probe in a state in which a lower end of the first probe according to the first embodiment is not receiving an upward force; FIG. 4 is a schematic cross-sectional view showing the shape of a first probe in a state in which an upward force is applied to a lower end of the first probe according to the first embodiment; FIG. 5A to 5C are schematic side views illustrating each step of the inspection method according to the first embodiment. 5A to 5C are schematic side views illustrating each step of the inspection method according to the first embodiment. 5A to 5C are schematic top views illustrating steps of a first position adjustment method for an inspection object in the inspection method according to the first embodiment. 5A to 5C are schematic top views illustrating steps of a first position adjustment method for an inspection object in the inspection method according to the first embodiment. 5A to 5C are schematic top views illustrating steps of a first position adjustment method for an inspection object in the inspection method according to the first embodiment. 5A to 5C are schematic top views illustrating steps of a first position adjustment method for an inspection object in the inspection method according to the first embodiment. 5A to 5C are schematic top views showing steps of a second position adjustment method of an inspection object in the inspection method according to the first embodiment. 5A to 5C are schematic top views showing steps of a second position adjustment method of an inspection object in the inspection method according to the first embodiment. 5A to 5C are schematic top views showing steps of a second position adjustment method of an inspection object in the inspection method according to the first embodiment. 5A to 5C are schematic top views showing steps of a second position adjustment method of an inspection object in the inspection method according to the first embodiment. 5A to 5C are schematic side views illustrating each step of the inspection method according to the first embodiment. 5A to 5C are schematic side views illustrating each step of the inspection method according to the first embodiment. 5A to 5C are schematic side views illustrating each step of the inspection method according to the first embodiment. 5A to 5C are schematic side views illustrating each step of the inspection method according to the first embodiment. 5A to 5C are schematic side views illustrating each step of the inspection method according to the first embodiment. 5A to 5C are schematic cross-sectional views for explaining the operation of the probe unit according to the first embodiment. 5A to 5C are schematic cross-sectional views for explaining the operation of the probe unit according to the first embodiment. 5A to 5C are schematic cross-sectional views for explaining the operation of the probe unit according to the first embodiment. 5A to 5C are schematic cross-sectional views for explaining the operation of the probe unit according to the first embodiment. 5A to 5C are schematic cross-sectional views for explaining the operation of the probe unit according to the first embodiment. 5A to 5C are schematic cross-sectional views for explaining the operation of the probe unit according to the first embodiment. 5A to 5C are schematic cross-sectional views for explaining the operation of the probe unit according to the first embodiment. 10 is a schematic diagram showing the positional relationship between a first probe and a first through hole in a case where the first probe according to the first embodiment does not exhibit a buckling phenomenon; FIG. 5A is a schematic diagram showing a positional relationship between a first probe and a first through hole in a case where the first probe according to the first embodiment shows a buckling phenomenon; FIG. 1 is a schematic top view showing an overall configuration of an inspection system according to a first embodiment; FIG. 13 is a schematic top view showing an overall configuration of an inspection system according to a modified example of the first embodiment. 4 is a flowchart showing a flow of a manufacturing method for the semiconductor laser device according to the first embodiment. 11 is a schematic cross-sectional view showing a part of a probe unit according to a first modified example. FIG. 11 is a schematic cross-sectional view showing a part of a probe unit according to a second modified example. FIG. 13 is a schematic cross-sectional view showing a part of a probe unit according to a third modified example. FIG. 13 is a schematic cross-sectional view showing a part of a probe unit according to a fourth modified example. FIG. 13 is a schematic top view showing a part of the probe-penetrating member of the probe unit according to Modification 5. FIG. 13 is a schematic top view showing a part of the probe-penetrating member of the probe unit according to Modification 6. FIG. FIG. 23 is a schematic cross-sectional view showing a part of a probe unit according to a seventh modified example. 23 is a schematic side view showing the configuration of each probe of a probe unit according to Modification 8. FIG. 23 is a schematic side view showing the configuration of each probe of a probe unit according to Modification 8. FIG. 23 is a schematic side view showing the configuration of each probe of a probe unit according to Modification 8. FIG. 13 is a schematic cross-sectional view showing a part of a probe unit according to a ninth modified example. FIG. 23 is a schematic cross-sectional view showing a part of a probe unit according to a modified example 10. FIG. 4 is a schematic perspective view showing a first example of a penetrating member inclined surface and a stage inclined surface according to the first embodiment; FIG. 4 is a schematic cross-sectional view showing a first example of a penetrating member inclined surface and a stage inclined surface according to the first embodiment. FIG. 11 is a schematic cross-sectional view showing a second example of the penetrating member inclined surface and the stage inclined surface according to the first embodiment. FIG. 13 is a schematic perspective view showing a third example of the penetrating member inclined surface and the stage inclined surface according to the first embodiment; FIG. 13 is a schematic cross-sectional view showing a fourth example of the inclined surface of the penetrating member according to the first embodiment; FIG. FIG. 11 is a schematic top view showing a configuration of a probe unit according to a second embodiment. 10 is a schematic cross-sectional view showing a configuration of a probe unit according to a second embodiment. FIG. 10 is a schematic cross-sectional view showing a state in which a height adjustment member disposed in a probe unit according to a second embodiment is in contact with a stage. FIG. 13 is a schematic cross-sectional view showing a configuration of a probe unit according to a third embodiment. FIG. 13 is a schematic cross-sectional view showing a state in which a unit contact surface of a height adjustment member arranged on a stage in accordance with embodiment 3 is brought into contact with a probe unit. FIG. 13 is a schematic cross-sectional view showing a configuration of a probe unit according to a fourth embodiment. FIG. 13 is a schematic cross-sectional view showing a state in which a height adjustment member disposed in a probe unit according to a fourth embodiment is in contact with a stage. FIG. FIG. 13 is a schematic top view showing the configuration of a probe unit according to a fifth embodiment. FIG. 13 is a first schematic cross-sectional view showing a configuration of a probe unit according to a fifth embodiment. FIG. 13 is a second schematic cross-sectional view showing the configuration of the probe unit according to the fifth embodiment. FIG. 13 is a schematic top view showing the configuration of a probe unit according to a sixth embodiment. FIG. 13 is a schematic first cross-sectional view showing a configuration of a probe unit according to a sixth embodiment. FIG. 23 is a second schematic cross-sectional view showing the configuration of the probe unit according to the sixth embodiment. FIG. 23 is a schematic top view showing the configuration of a probe unit according to embodiment 7. 13 is a schematic cross-sectional view showing a configuration of a probe unit according to a seventh embodiment. FIG. 13 is a schematic cross-sectional view showing a state in which a height adjustment member disposed in a probe unit according to a seventh embodiment is brought into contact with a stage. FIG.

Below, embodiments of the present disclosure will be described with reference to the drawings. Note that each of the embodiments described below shows a specific example of the present disclosure. Therefore, the numerical values, shapes, materials, components, and the arrangement and connection forms of the components shown in the following embodiments are merely examples and are not intended to limit the present disclosure.

In addition, each figure is a schematic diagram and is not necessarily an exact illustration. Therefore, the scale and the like are not necessarily the same in each figure. In addition, in each figure, the same reference numerals are used for substantially the same configuration, and duplicate explanations are omitted or simplified.

In addition, in this specification, terms indicating the relationship between elements, such as "equal," and terms indicating the shape of elements, such as "flat," "parallel," "vertical," "inverted," and numerical ranges are not expressions that only express a strict meaning, but are expressions that include a substantially equivalent range, for example, a difference of about a few percent.

In this specification, the terms "above" and "below" do not necessarily refer to vertically above and below in absolute spatial recognition, but are used as terms to define the relative positional relationship of components. Furthermore, the terms "above" and "below" are applied not only to cases where two components are arranged with a gap between them and another component exists between the two components, but also to cases where two components are arranged in contact with each other.

(Embodiment 1)
A probe unit, an inspection device, an inspection system, an inspection method, and a method for manufacturing a semiconductor laser device according to a first embodiment will be described.

[1-1. Overall configuration of the inspection device]
First, the overall configuration of the inspection device according to the present embodiment will be described with reference to FIG. 1. FIG. 1 is a schematic side view showing the overall configuration of the inspection device 10 according to the present embodiment. Each figure shows an X-axis, a Y-axis, and a Z-axis that are mutually orthogonal. The X-axis, the Y-axis, and the Z-axis are in a right-handed Cartesian coordinate system. FIG. 1 also shows a semiconductor laser device 80, which is an example of an object to be inspected by the inspection device 10. In each figure, in order to explain the relative position in the Z-axis direction, the term "upper" is used to indicate the positive side of the Z-axis direction from a certain position in the Z-axis direction, and the term "lower" is used to indicate the negative side of the Z-axis direction.

The inspection device 10 is a device that inspects the characteristics of an object to be inspected by supplying a current to the object to be inspected. As shown in FIG. 1, the inspection device 10 according to the present embodiment includes a probe unit 20, a stage 70, a height adjustment member 50, a base 11, a support 12, slide rails 13, 15, 17, a vertical movement member 14, a unit movement member 16, a connection spring 18, and a unit support member 19.

The base 11 is a platform on which the other components of the inspection device 10 are placed. The stage 70 and the support 12 are placed on the base 11.

The stage 70 is a member having a mounting surface 70a on which the test object is placed. In this embodiment, the mounting surface 70a includes a flat surface perpendicular to the up-down direction (the Z-axis direction in FIG. 1), and the test object is placed on this flat surface. Suction holes 72 are formed on the mounting surface 70a at the positions where the test object is to be placed. The suction holes 72 are used to suck the test object placed on the mounting surface 70a, allowing the test object to be temporarily fixed to the mounting surface 70a without being damaged.

The probe unit 20 is a unit that includes a part of a current circuit for supplying a current to a test subject, and includes a first probe 30. The detailed configuration of the probe unit 20 will be described later. The probe unit 20 is fixed to a unit support member 19.

The height adjustment member 50 is a member disposed between the probe unit 20 and the stage 70. The height adjustment member 50 is a member that can be treated as a substantially rigid body, and functions as a spacer that defines the minimum distance between the probe unit 20 and the stage 70. In this embodiment, the height adjustment member 50 is a plate-like member having a thickness corresponding to the minimum distance between the probe unit 20 and the stage 70, and is fixed to the probe unit 20. The height adjustment member 50 has a unit contact surface 50b that contacts the probe unit 20 and a stage contact surface 50a that contacts the stage 70. The stage contact surface 50a is a rough surface. In this embodiment, the stage contact surface 50a is a rough surface. This increases the frictional force between the stage contact surface 50a and the stage 70, so that the height adjustment member 50 can be pressed against the stage 70 (the mounting surface 70a) to suppress misalignment of the height adjustment member 50 and the probe unit 20 with respect to the stage 70. The rough surface may be defined as a surface having an arithmetic mean roughness Ra of 0.2 μm or more, for example. The arithmetic mean roughness Ra of the stage contact surface 50a and the unit contact surface 50b may be, for example, 0.8 μm or more and 1.6 μm or less. In this embodiment, the height adjustment member 50 is made of SUS440C, and the arithmetic mean roughness Ra of the stage contact surface 50a is 1.2 μm. The material for forming the height adjustment member 50 is not particularly limited as long as it can be treated as a substantially rigid body. The arithmetic mean roughness Ra of the mounting surface 70a of the stage 70 may be, for example, 0.1 μm or more and 2.0 μm or less. In this embodiment, the material for forming the stage 70 is a WC-Co alloy (a sintered body of tungsten carbide and cobalt), and the arithmetic mean roughness Ra of the mounting surface 70a is 0.15 μm. With this configuration, a sufficient frictional force can be obtained between the stage contact surface 50a and the placement surface 70a to suppress misalignment of the height adjustment member 50 with respect to the stage 70.

The support pillar 12 is a columnar member erected on the base 11. The support pillar 12 extends in the vertical direction.

The slide rail 13 is a rail-shaped member fixed to the support 12. The slide rail 13 has a fixed portion and a sliding portion, and the sliding portion is supported so as to be freely slidable in the vertical direction relative to the fixed portion. The fixed portion of the slide rail 13 is fixed to the support 12, and the sliding portion of the slide rail 13 is fixed to the vertical movement member 14.

The vertically movable member 14 is a member that moves in the vertical direction relative to the support 12. In this embodiment, the vertically movable member 14 is fixed to the slide rail 13 and moves in the vertical direction. More specifically, the vertically movable member 14 is fixed to the slide portion of the slide rail 13 and moves in the vertical direction together with the slide portion relative to the fixed portion of the slide rail 13. The vertically movable member 14 has a portion that extends in the vertical direction and a portion that extends in the horizontal direction. The vertically extending portion of the vertically movable member 14 is fixed to the slide portion of the slide rail 13. In the example shown in FIG. 1, the horizontally extending portion of the vertically movable member 14 extends in the Y-axis direction. The slide rail 15 is fixed to the horizontally extending portion of the vertically movable member 14.

The slide rail 15 is a rail-shaped member fixed to the vertical moving member 14. The slide rail 15 has a fixed portion and a sliding portion, and the sliding portion is supported so as to be freely slidable in the horizontal direction relative to the fixed portion. In this embodiment, the sliding portion is supported so as to be freely slidable in the Y-axis direction relative to the fixed portion of the slide rail 15. The fixed portion of the slide rail 15 is fixed to a portion of the vertical moving member 14 extending in the horizontal direction, and the sliding portion of the slide rail 15 is fixed to the unit moving member 16.

The unit moving member 16 is a member that moves the unit support member 19. In this embodiment, the unit moving member 16 moves horizontally relative to the vertical moving member 14. The unit moving member 16 is fixed to the slide rail 15 and moves in the Y-axis direction. More specifically, the unit moving member 16 is fixed to the slide portion of the slide rail 15 and moves in the Y-axis direction together with the slide portion relative to the fixed portion of the slide rail 15. The unit moving member 16 has a portion that extends horizontally and a portion that extends vertically. The horizontally extending portion of the unit moving member 16 is fixed to the slide portion of the slide rail 15. The slide rail 17 and one end of the connection spring 18 are fixed to the vertically extending portion of the unit moving member 16.

The slide rail 17 is a rail-shaped member fixed to the unit moving member 16. The slide rail 17 has a fixed portion and a sliding portion, and the sliding portion is supported so as to be freely slidable in the vertical direction relative to the fixed portion. The fixed portion of the slide rail 17 is fixed to a portion of the unit moving member 16 that extends in the vertical direction, and the sliding portion of the slide rail 17 is fixed to the unit support member 19. In other words, the slide rail 17 connects the unit support member 19 to the unit moving member 16 so as to be freely slidable in the vertical direction.

The connecting spring 18 is an elastic member that connects the unit moving member 16 and the unit support member 19. In this embodiment, one end of the connecting spring 18 is connected to the unit moving member 16, and the other end is fixed to the unit support member 19.

The unit support member 19 is a member that supports the probe unit 20. The unit support member 19 is fixed to the slide rail 17. In this embodiment, the unit support member 19 is fixed to the slide portion of the slide rail 17. The other end of the connection spring 18 is also fixed to the unit support member 19. In this manner, the unit support member 19 and the unit moving member 16 are connected using the connection spring 18 and the slide rail 17, thereby regulating the relative positions of the unit support member 19 and the unit moving member 16 in the vertical direction.

In this embodiment, the unit support member 19 supports the probe unit 20 to which the height adjustment member 50 is fixed. In other words, the unit support member 19 is integrated with the probe unit 20 and the height adjustment member 50.

Here, a case will be described in which a force is applied to the unit moving member 16 in a direction to move the unit moving member 16 further downward with the height adjustment member 50 in contact with the stage 70. In this case, since the height adjustment member 50 integrated with the unit support member 19 is in contact with the stage 70, the unit support member 19 cannot move downward. When the force moving the unit moving member 16 downward becomes greater than the elastic force of the connection spring 18, the connection spring 18 stretches, and the unit moving member 16 moves downward relative to the unit support member 19. In this way, since the unit support member 19 is connected to the unit moving member 16 via the connection spring 18 and the slide rail 17, the height adjustment member 50 can be pressed against the stage 70 with a force corresponding to the spring constant of the connection spring 18 while preventing excessive force from being applied to the probe unit 20 and height adjustment member 50 supported by the unit support member 19. In other words, the above configuration makes it possible to easily maintain the force for fixing the probe unit 20 to the stage 70 while maintaining the positional relationship between the probe unit 20 and the stage 70 .

In this embodiment, the distance between the lower end of the support 12, which is connected to the base 11 and does not substantially vibrate relative to the base 11, and the height adjustment member 50 is long. In addition, multiple members are interposed between the support 12 and the height adjustment member 50. For this reason, vibration is likely to occur in the height adjustment member 50. In particular, as shown in the example of FIG. 1, the shape formed by the multiple members interposed between the support 12 and the height adjustment member 50 is not linear but C-shaped, so vibration is more likely to occur. However, in this embodiment, the spring constant of the connection spring 18 is appropriately set and the height adjustment member 50 is pressed against the stage 70 to suppress vibration, so that the relative position of the height adjustment member 50 to the stage 70 can be suppressed from shifting. For example, even when the entire inspection device 10 is moved with the height adjustment member 50 pressed against the stage 70, the relative position of the height adjustment member 50 to the stage 70 can be suppressed from shifting. That is, it is possible to prevent the first probe 30 of the probe unit 20 and the like from being displaced relative to the semiconductor laser device 80, and to reduce damage to the semiconductor laser device 80 during inspection.

[1-2. Configuration of probe unit and stage]
The configurations of the probe unit 20 and the stage 70 according to this embodiment will be described with reference to Figs. 2 to 4. Figs. 2, 3, and 4 are a schematic top view, a first cross-sectional view, and a second cross-sectional view, respectively, showing the configuration of the probe unit 20 according to this embodiment. Fig. 3 shows a cross-section taken along line III-III in Fig. 2. Fig. 3 shows a cross-section taken along line IV-IV in Fig. 2. Figs. 3 and 4 also show the height adjustment member 50, the stage 70, and the semiconductor laser device 80 to be inspected. Figs. 2 and 4 also show a measuring device 90 that measures light from the light emitting point 82e of the semiconductor laser device 80. The measuring device 90 has a light receiving unit 92 that receives light, and measures, for example, the power of the received light.

As shown in Figures 2 and 3, the probe unit 20 comprises a first probe 30, a second probe 40, and a unit body 21.

The unit body 21 is the main body of the probe unit 20, and the first probe 30 and the second probe 40 are fixed to the unit body 21. The unit body 21 has a cavity 21v inside in a cross-sectional view. The unit body 21 has a probe fixing member 24 and a probe penetrating member 23.

The probe fixing member 24 is a member to which the first probe 30 and the second probe 40 are fixed. In this embodiment, the probe fixing member 24 is a plate-like member in which a first fixing hole 27a and a second fixing hole 27b are formed. The first probe 30 is fixed to the probe fixing member 24 by adhesive 28 while inserted into the first fixing hole 27a. The second probe 40 is fixed to the probe fixing member 24 by adhesive 28 while inserted into the second fixing hole 27b.

The probe penetrating member 23 is disposed below the probe fixing member 24 and spaced apart from the probe fixing member 24, and is a member in which a first through hole 26a and a second through hole 26b through which the first probe 30 and the second probe 40 respectively pass are formed. In this embodiment, the probe penetrating member 23 is a plate-like member in which the first through hole 26a and the second through hole 26b are formed. There is a cavity 21v between the probe fixing member 24 and the probe penetrating member 23. The first probe 30 and the second probe 40 are inserted into the first through hole 26a and the second through hole 26b, respectively, and are not fixed to the probe penetrating member 23. The probe penetrating member 23 has an opposing surface 21u through which the first probe 30 and the second probe 40 pass and which faces the test object. In this embodiment, the opposing surface 21u includes a flat portion perpendicular to the up-down direction. The first probe 30 and the second probe 40 have a portion that protrudes downward from the opposing surface 21u. The portions of the first probe 30 and the second probe 40 that protrude downward from the opposing surface 21u are movable in the vertical direction and are arranged so as to be perpendicular to the surface of the semiconductor laser device 80 with which the second probe 40 comes into contact.

The probe penetrating member 23 has a penetrating member inclined surface 21s that is inclined in the vertical direction on the opposing surface 21u. The penetrating member inclined surface 21s rises as it moves away from the first through hole 26a and the second through hole 26b. The penetrating member inclined surface 21s is located between a position above the test object on the opposing surface 21u and the outer edge of the opposing surface 21u. By having such an opposing surface 21u have the penetrating member inclined surface 21s, when the measuring device 90 is brought close to the probe unit 20, physical interference between the measuring device 90 and the probe unit 20 can be reduced. In addition, when a light-emitting element such as a semiconductor laser element is used as the test object, the penetrating member inclined surface 21s is arranged in a portion facing the light propagation path of the opposing surface 21u, thereby reducing the blocking of the light emitted from the test object by the opposing surface 21u.

In this embodiment, the penetrating member inclined surface 21s is a light reflection suppression surface. A light reflection suppression surface refers to a surface having a front reflectance of 3% or less at the wavelength of light emitted from the test object. This can prevent the light from the test object from being diffusely reflected at the penetrating member inclined surface 21s, which causes noise in the light measurement. For example, a matte black painted surface or a roughened surface can be used as the light reflection suppression surface.

The first probe 30 and the second probe 40 are included in a current circuit for supplying a current to the test object, and are conductive members having elastic restoring force. In this embodiment, each of the first probe 30 and the second probe 40 includes a metal wire having elastic restoring force. The first probe 30 extends in the vertical direction and has a lower end 31 and an upper end 32. The second probe 40 extends in the vertical direction and has a lower end 41 and an upper end 42. In this embodiment, the upper end 32 of the first probe and the upper end 42 of the second probe 40 are located above the probe fixing member 24. In addition, the lower end 31 of the first probe and the lower end 41 of the second probe 40 are located below the probe penetrating member 23. When the first probe 30 and the second probe 40 are not in contact with the test object, the lower end 31 of the first probe 30 is located below the lower end 41 of the second probe 40. In other words, as shown in FIG. 3, the length L1 from the opposing surface 21u to the lower end 31 of the first probe 30 (i.e., the length of the portion of the first probe 30 protruding from the opposing surface 21u) is longer than the length L2 from the opposing surface 21u to the lower end 41 of the second probe 40 (i.e., the length of the portion of the second probe 40 protruding from the opposing surface 21u).

The lower end 31 of the first probe 30 and the lower end 41 of the second probe 40 are pressed against the test object. As shown in FIG. 3, the semiconductor laser device 80 to be tested according to this embodiment has a submount 84 having an upper surface (not shown) and an element 82 arranged on the upper surface of the submount 84. The element 82 is an edge-emitting semiconductor laser element to which a current is supplied. Although not shown in FIG. 3, the submount 84 has a first electrode arranged on the upper surface of the submount 84, and the element 82 has an element upper surface and a second electrode arranged on the element upper surface. When supplying a current to test the semiconductor laser device 80, the lower end 31 of the first probe 30 is brought into contact with the first electrode of the submount 84, and the lower end 41 of the second probe 40 is brought into contact with the second electrode of the element 82. The following inequality holds for height d1 from the lower surface of submount 84 to the first electrode (i.e., the vertical dimension from the mounting surface 70a of stage 70 to the first electrode) and height d2 from the lower surface of submount 84 to the second electrode of element 82 (i.e., the vertical dimension from the mounting surface 70a of stage 70 to the second electrode), and the above-mentioned lengths L1 and L2.

L1-L2>d2-d1 (1)

Furthermore, the following inequality holds between height d1, height d2, length L1, and length L2 and height H (vertical dimension) of height adjustment member 50.

L1+d1>H (2)
L2+d2>H (3)

The effects of the above relationships will be discussed later.

The elastic restoring forces of the first probe 30 and the second probe 40 will be described with reference to Figures 5 and 6. Figure 5 is a schematic cross-sectional view showing the shape of the first probe 30 in a state in which the lower end 31 of the first probe 30 according to this embodiment is not receiving an upward force. Figure 6 is a schematic cross-sectional view showing the shape of the first probe 30 in a state in which the lower end 31 of the first probe 30 according to this embodiment is receiving an upward force.

As shown in FIG. 5, the first probe 30 in this embodiment extends linearly in the vertical direction when the lower end 31 is not receiving an upward force.

On the other hand, when the lower end 31 receives an upward force, the portion of the first probe 30 including the lower end 31 moves upward, and the portion of the first probe 30 located in the cavity 21v bends. In this way, the first probe 30 exhibits a buckling phenomenon. In other words, when the lower end 31 of the first probe 30 and the lower end 41 of the second probe 40 receive an upward force, the first probe 30 deforms in a direction intersecting the up-down direction.

Furthermore, when the upward force applied to the lower end 31 is released, the first probe 30 returns to its original shape as shown in Figure 5. In this manner, the first probe 30 has an elastic restoring force. Here, if the elastic restoring force of the first probe 30 is represented by F1, the spring constant of the first probe 30 is represented by k1, and the displacement of the lower end 31 of the first probe 30 is represented by Lx1, the following equation is established.

F1=k1・Lx1 (4)

In this embodiment, the second probe 40 also exhibits the buckling phenomenon similar to the first probe 30. Furthermore, if the elastic restoring force of the second probe 40 is represented by F2, the spring constant of the second probe 40 is represented by k2, and the displacement of the lower end 41 of the second probe 40 is represented by Lx2, the following equation is established.

F2=k2・Lx2 (5)

As described above, the first probe 30 and the second probe 40 have an elastic restoring force. Furthermore, since the above inequalities (2) and (3) hold, when the height adjustment member 50 and the probe unit 20 are lowered until the stage contact surface 50a of the height adjustment member 50 contacts the mounting surface 70a of the stage 70, the displacement amount Lx1 of the lower end 31 of the first probe 30 and the displacement amount Lx2 of the lower end 41 of the second probe 40 are expressed by the following equations.

Lx1=L1+d1-H>0 (6)
Lx2=L2+d2-H>0 (7)

In this way, the lower end 31 of the first probe 30 and the lower end 41 of the second probe 40 are displaced, so that the elastic restoring force represented by the above formulas (4) and (5) can be applied to the semiconductor laser device 80. In other words, the elastic restoring force represented by the above formulas (4) and (5) can press each probe vertically against the contact surface of each probe on the semiconductor laser device 80. As a result, no horizontal force is applied to the contact surface, so that horizontal positional deviation of each probe on the surface of the semiconductor laser device can be suppressed.

As described above, the stage 70 is a member having a mounting surface 70a on which the test object is placed. In this embodiment, the mounting surface 70a has a stage inclined surface 70s that is inclined with respect to the vertical direction as shown in FIG. 4. The stage inclined surface 70s descends as it approaches the end of the mounting surface 70a. By having the mounting surface 70a have the stage inclined surface 70s in this way, when the measuring device 90 is brought close to the probe unit 20, physical interference between the measuring device 90 and the stage 70 can be reduced. In addition, when a light-emitting device such as a semiconductor laser element is used as the test object, the stage inclined surface 70s can be arranged in a portion facing the light propagation path of the mounting surface 70a to reduce the light being blocked by the mounting surface 70a. In this embodiment, the stage inclined surface 70s may be a light reflection suppression surface. For example, a black surface, a rough surface, or the like can be used as the light reflection suppression surface, similar to the penetrating member inclined surface 21s.

[1-3. Inspection method]
The inspection method according to the present embodiment will be described with reference to Figs. 7 to 21. Figs. 7, 8, and 17 to 21 are schematic side views illustrating the steps of the inspection method according to the present embodiment. Figs. 9 to 12 are schematic top views illustrating the steps of a first position adjustment method of an inspection object in the inspection method according to the present embodiment. Figs. 13 to 16 are schematic top views illustrating the steps of a second position adjustment method of an inspection object in the inspection method according to the present embodiment.

The inspection method according to the present embodiment is a method for inspecting the characteristics of an object to be inspected by supplying a current to the object to be inspected. In this embodiment, the inspection is performed using an inspection device 10. An example of an object to be inspected, a semiconductor laser device 80, will be described below.

First, as shown in FIG. 7, the inspection object is inserted into the inspection device 10. Specifically, as shown in FIG. 8, the semiconductor laser device 80, which is the inspection object, is placed on the mounting surface 70a of the stage 70 provided in the inspection device 10. For example, a collet can be used to move the semiconductor laser device 80. The semiconductor laser device 80 is placed on the suction hole 72 of the mounting surface 70a. When the semiconductor laser device 80 is inserted into the inspection device 10, the probe unit 20 and the like are retracted to a retracted position other than above the stage 70 so as not to interfere with the insertion.

Next, the semiconductor laser device 80 is placed at a predetermined position by adjusting the position of the semiconductor laser device 80 placed on the mounting surface 70a as shown in Figure 8. The position adjustment method is not particularly limited, but below, a first position adjustment method and a second position adjustment method are described as examples of the position adjustment method.

The first position adjustment method will be described with reference to Figures 9 to 12. In the first position adjustment method, first, with the semiconductor laser device 80 adsorbed using the suction holes 72, the frame body Fm is placed on the mounting surface 70a of the stage 70 as shown in Figure 9. The frame body Fm is placed at a position corresponding to a predetermined position of the semiconductor laser device 80 (i.e., the target position for position adjustment). In this embodiment, the frame body Fm is placed on the mounting surface 70a of the stage 70 so that the semiconductor laser device 80 is located inside the rectangular ring-shaped frame body Fm.

A through hole is formed in the frame body Fm, and the semiconductor laser device 80 is pushed in the negative direction of the X-axis direction using a push rod Pm that passes through the through hole. At this time, the position of the frame body Fm is fixed so that the frame body Fm does not move relative to the mounting surface 70a. As a result, as shown in FIG. 10, the semiconductor laser device 80 is pressed against the inner wall of the frame body Fm on the negative side of the X-axis direction, and the position of the semiconductor laser device 80 in the X-axis direction is adjusted to a position defined by the inner wall of the frame body Fm. Note that in FIG. 10, the position of the semiconductor laser device 80 before movement is indicated by a dotted line.

Next, as shown in Fig. 11, the semiconductor laser device 80 is pushed in the positive direction in the Y-axis direction using a push rod Pm that passes through another through hole formed in the frame body Fm. At this time, the position of the frame body Fm is fixed so that the frame body Fm does not move relative to the mounting surface 70a. As a result, as shown in Fig. 12, the semiconductor laser device 80 is pressed against the inner wall of the frame body Fm on the positive side in the Y-axis direction, so that the position of the semiconductor laser device 80 in the Y-axis direction is adjusted to a position defined by the inner wall of the frame body Fm. Note that in Fig. 12, the position of the semiconductor laser device 80 before movement is indicated by a dotted line.

As described above, the position of the semiconductor laser device 80 can be adjusted by pressing the semiconductor laser device 80 against the inner wall of the frame body Fm while aligning the position of the inner wall of the frame body Fm with a predetermined position of the semiconductor laser device 80. To make these position adjustments smooth, it is preferable that the mounting surface 70a is a smooth surface.

Next, the second position adjustment method will be described with reference to Figs. 13 to 16. In the second position adjustment method, first, the frame body Fm is placed on the mounting surface 70a of the stage 70 as shown in Fig. 13 with the semiconductor laser device 80 adsorbed using the suction holes 72. The frame body Fm is placed on the mounting surface 70a of the stage 70 so that the semiconductor laser device 80 is located inside the rectangular ring-shaped frame body Fm. Note that in Fig. 13, a predetermined position of the semiconductor laser device 80 (i.e., a target position for position adjustment) is shown by a dotted line. Next, as shown by an arrow in Fig. 13, the frame body Fm is moved in the positive direction of the X-axis. At this time, the semiconductor laser device 80 is pushed in the positive direction of the X-axis by the inner wall of the frame body Fm, so that the semiconductor laser device 80 is moved in the positive direction of the X-axis as shown in Fig. 14. Note that in Fig. 14, the positions of the frame body Fm and the semiconductor laser device 80 before the movement are shown by dotted lines.

Next, the frame body Fm is moved in the positive Y-axis direction as shown by the arrow in Fig. 15. At this time, the inner wall of the frame body Fm pushes the semiconductor laser device 80 in the positive Y-axis direction, thereby moving the semiconductor laser device 80 in the positive Y-axis direction as shown in Fig. 16. Note that in Fig. 16, the positions of the frame body Fm and the semiconductor laser device 80 before movement are shown by dotted lines.

As described above, the position of the semiconductor laser device 80 can be adjusted by pressing the semiconductor laser device 80 with the inner wall of the frame body Fm. Furthermore, according to the second position adjustment method, when adjusting the position of the semiconductor laser device 80, continuous position adjustment can be performed in the X-axis direction and the Y-axis direction using only one jig, the frame body Fm. Therefore, the time required for position adjustment can be reduced.

When using this first position adjustment method, the stage 70 of the inspection device 10 has suction holes 72 that adsorb the inspection object. The inspection device 10 has a frame body Fm that surrounds the inspection object adsorbed to the stage 70. The inspection device 10 adjusts the position of the inspection object by moving the frame body Fm.

After completing the position adjustment of the semiconductor laser device 80, the probe unit 20 is moved from the retracted position to above the stage 70 as shown in Fig. 17. In this embodiment, the unit moving member 16 is moved in the negative Y-axis direction to move the probe unit 20 above the stage 70.

18, the probe unit 20 is lowered to bring the first probe 30 and the second probe 40 (not shown in FIG. 18) of the probe unit 20 into contact with the semiconductor laser device 80. In this embodiment, the vertical movement member 14 is lowered to press the stage contact surface 50a of the height adjustment member 50 against the mounting surface 70a of the stage 70. Accordingly, the first probe 30 and the second probe 40 of the probe unit 20 are pressed against the first electrode and the second electrode of the semiconductor laser device 80, respectively. Since the unit support member 19 of the inspection device 10 is connected to the unit movement member 16 by the slide rail 17 and the connection spring 18, as described above, the force for fixing the probe unit 20 to the stage 70 can be easily maintained while maintaining the positional relationship between the probe unit 20 and the stage 70. Details of the operation of the probe unit 20 in this process will be described later.

18, the characteristics of the semiconductor laser device 80 are inspected by supplying a current to the semiconductor laser device 80 via the first probe 30 and the second probe 40. In the inspection, for example, a measuring device that measures the power of light emitted from the semiconductor laser device 80 is used.

19, the probe unit 20 is raised to move the first probe 30 and the second probe 40 (not shown in FIG. 19) away from the semiconductor laser device 80. In this embodiment, the probe unit 20 and the height adjustment member 50 are raised by raising the vertical movement member 14. As a result, the first probe 30 and the second probe 40 of the probe unit 20 move away from the first electrode and the second electrode of the semiconductor laser device 80, respectively.

20, the probe unit 20 is moved from above the stage 70 to a retracted position. In this embodiment, the unit moving member 16 is moved in the positive Y-axis direction to retract the probe unit 20.

21, the semiconductor laser device 80 is removed from the inspection device 10. That is, the semiconductor laser device 80 is moved from the mounting surface 70a of the stage 70 of the inspection device 10 to the outside of the inspection device 10. To remove the semiconductor laser device 80, for example, a vacuum collet or the like can be used with suction by the suction holes stopped.

In this manner, the semiconductor laser device 80 to be inspected can be inspected.

[1-4. Operation of the probe unit]
The operation of the probe unit 20 in the inspection method according to the present embodiment will be described with reference to Figs. 22 to 28. Figs. 22 to 28 are schematic cross-sectional views for explaining the operation of the probe unit 20 according to the present embodiment. The states of the probe unit 20 in the steps shown in Figs. 17, 18, and 19 of the above-mentioned inspection method are shown in Figs. 22, 25, and 28, respectively. The states of the probe unit 20 from the step shown in Fig. 17 to the step shown in Fig. 18 are shown in Figs. 22 to 25. The states of the probe unit 20 from the step shown in Fig. 18 to the step shown in Fig. 19 are shown in Figs. 25 to 28.

17, as shown in Fig. 22, the probe unit 20 is positioned above the stage 70, and the first probe 30 and the second probe 40 are not in contact with the semiconductor laser device 80. In addition, the height adjustment member 50 is not in contact with the stage 70.

Next, the probe unit 20 is gradually lowered to bring the first probe 30 into contact with the first electrode (not shown in FIG. 23) arranged on the upper surface of the submount 84 of the semiconductor laser device 80 (first contact step), as shown in FIG. 23. In this state, the second probe 40 is not in contact with the second electrode arranged on the upper surface of the element 82 of the semiconductor laser device 80. In addition, the height adjustment member 50 is not in contact with the mounting surface 70a of the stage 70.

After the first contact step, the probe unit 20 is gradually lowered with the first probe 30 in contact with the first electrode, so that the second probe 40 comes into contact with the second electrode (not shown in FIG. 24) arranged on the upper surface of the element 82 of the semiconductor laser device 80, as shown in FIG. 24 (second contact step). At this time, the lower end 31 of the first probe 30 is displaced upward relative to the probe penetrating member 23. Accordingly, as shown in FIG. 24, the first probe 30 bends in the cavity 21v. In other words, the first probe 30 exhibits a buckling phenomenon. The lower end 31 of the first probe 30 presses the first electrode toward the stage 70 with the elastic restoring force expressed by the formula (4). Although the first probe 30 buckles, the portion of the first probe 30 protruding downward from the facing surface 21u continues to maintain a perpendicular state to the contact surface of the semiconductor laser.

Next, with the first probe 30 and the second probe 40 in contact with the first electrode and the second electrode, respectively, the probe unit 20 is further gradually lowered to press the stage contact surface 50a of the height adjustment member 50 against the mounting surface 70a of the stage 70. At this time, the lower end 31 of the first probe 30 is further displaced upward relative to the probe penetrating member 23, so that the elastic restoring force corresponding to the displacement of the lower end 31 becomes even larger. In other words, the force with which the lower end 31 of the first probe 30 presses the first electrode toward the stage 70 becomes even stronger. In addition, the lower end 41 of the second probe 40 is displaced upward relative to the probe penetrating member 23. Accordingly, as shown in FIG. 25, the second probe 40 bends in the cavity 21v. In other words, the second probe 40 exhibits a buckling phenomenon. The lower end 41 of the second probe 40 presses the second electrode toward the stage 70 with the elastic restoring force expressed by the formula (5). Although the second probe 40 undergoes a buckling phenomenon, the portion of the second probe 40 that protrudes downward from the facing surface 21u continues to maintain a perpendicular state to the contact surface of the semiconductor laser.

25, a current is supplied to the semiconductor laser device 80 under inspection while the first probe 30 is in contact with the first electrode and the second probe 40 is in contact with the second electrode (supply process). By supplying a current to the semiconductor laser device 80 via the first probe 30 and the second probe 40, the characteristics of the semiconductor laser device 80 are inspected.

After the supply process, the probe unit 20 is gradually raised to move the stage contact surface 50a of the height adjustment member 50 away from the mounting surface 70a of the stage 70, as shown in FIG. 26.

Next, the probe unit 20 is gradually raised to separate the second probe 40 from the second electrode, as shown in Fig. 27 (second detachment step). At this point, the second probe 40 has returned to its state before exhibiting the buckling phenomenon due to its elastic restoring force.

Next, the probe unit 20 is gradually raised to separate the first probe 30 from the first electrode, as shown in Fig. 28 (first detachment step). At this point, the first probe 30 has returned to its state before exhibiting the buckling phenomenon due to its elastic restoring force.

As described above, the probe unit 20 can be used to inspect the test subject.

[1-5. Effects, etc.]
The effects of the probe unit 20, the inspection device 10, and the inspection method according to the present embodiment will be described.

The probe unit 20 according to the present embodiment is a unit including a part of a current circuit for supplying a current to a test object. The probe unit 20 includes a first probe 30 and a second probe 40 included in the current circuit and having an elastic restoring force, a probe fixing member 24 to which the first probe 30 and the second probe 40 are fixed, and a probe penetrating member 23 disposed below the probe fixing member 24 and spaced apart from the probe fixing member 24, and having a first through hole 26a and a second through hole 26b through which the first probe 30 and the second probe 40 penetrate, respectively. The probe penetrating member 23 has an opposing surface 21u through which the first probe 30 and the second probe 40 penetrate and which faces the test object. The parts of the first probe 30 and the second probe 40 that protrude downward from the opposing surface are movable in the vertical direction. When the first probe 30 and the second probe 40 are not in contact with the test object, the lower end 31 of the first probe 30 is located below the lower end 41 of the second probe 40.

As a result, when using, for example, a semiconductor laser device 80 as an inspection object and bringing the probe unit 20 close to the semiconductor laser device 80, it is possible to first bring the lower end 31 of the first probe 30 into contact with the first electrode, which is lower in height than the second electrode, and press it against the mounting surface 70a.

In this embodiment, formula (1) holds. That is, the semiconductor laser device 80 has a first electrode with which the lower end 31 of the first probe 30 contacts, and a second electrode with which the lower end 41 of the second probe 40 contacts. The first electrode is located below the second electrode, and the difference in the vertical positions between the lower end 31 of the first probe 30 and the lower end 41 of the second probe 40 is greater than the difference in the vertical positions between the first electrode and the second electrode. Therefore, when the probe unit 20 is brought close to the semiconductor laser device 80, the first probe 30 can be reliably brought into contact with the first electrode before the second probe 40 contacts the second electrode. Here, the possibility of the semiconductor laser device 80 falling over (i.e., rolling) can be reduced in a case where the lower part (first electrode) of the semiconductor laser device 80 is pressed against the mounting surface 70a before the higher part (second electrode) is pressed against the mounting surface 70a, compared to a case where the higher part is pressed against the mounting surface 70a first. Therefore, damage to the semiconductor laser device 80 due to falling during inspection can be reduced.

In addition, when formula (1) is satisfied, in the supply process, the displacement of the lower end 41 of the second probe 40 relative to the probe-penetrating member 23 can be made smaller than the displacement of the lower end 31 of the first probe 30 relative to the probe-penetrating member 23. Therefore, the force pressing the second electrode by the lower end 41 of the second probe 40 is more likely to be reduced than the force pressing the first electrode by the lower end 31 of the first probe 30. Therefore, it is possible to suppress the formation of a probe mark (i.e., a dent) on the second electrode. In particular, Au, which is relatively soft, may be used as the second electrode of the element 82 of the semiconductor laser device 80. In this case, since the second electrode is prone to a probe mark, the probe unit 20 according to this embodiment is particularly effective.

In addition, when formula (1) is satisfied, as described above, after the supply process, the first probe 30 can be separated from the first electrode after the second probe 40 is separated from the second electrode. This reduces the lifting of the semiconductor laser device 80 together with the second probe 40 when the second probe 40 is separated from the second electrode, since the first probe 30 presses against the first electrode. Therefore, it is possible to reduce damage to the semiconductor laser device 80 caused by the semiconductor laser device 80 being dropped after being lifted. In particular, as described above, a relatively soft Au may be used as the second electrode, and in this case, the lower end 41 of the second probe 40 is likely to sink into the second electrode, and the second probe 40 and the second electrode are likely to stick together. Therefore, when the second probe 40 is separated from the second electrode, the semiconductor laser device 80 is likely to be lifted. Therefore, the probe unit 20 according to this embodiment is particularly effective.

The first probe 30 and the second probe 40 of the probe unit 20 in this embodiment may exhibit a buckling phenomenon.

The effects of such a first probe 30 and a second probe 40 will be described with reference to Figures 29 and 30. Figure 29 is a schematic diagram showing the positional relationship between the first probe 30 and the first through hole 26a when the first probe 30 according to this embodiment does not exhibit a buckling phenomenon. Figure 30 is a schematic diagram showing the positional relationship between the first probe 30 and the first through hole 26a when the first probe 30 according to this embodiment exhibits a buckling phenomenon. Figures 29 and 30 show a cross-sectional view (a) of the first through hole 26a and the first probe 30, and a top view (b) and a bottom view (c) of the first through hole 26a.

29, when the first probe 30 does not show the buckling phenomenon, the first probe 30 is not pressed against the inner wall surrounding the first through hole 26a, and can move freely within the first through hole 26a. That is, the first probe 30 near the through hole also vibrates with the vibration of the probe unit 20. On the other hand, as shown in FIG. 30, when the first probe 30 shows the buckling phenomenon, the first probe 30 is displaced in a direction perpendicular to the up-down direction, and the first probe 30 is pressed against the inner wall surrounding the first through hole 26a at the positions of the upper and lower surfaces of the probe penetrating member 23. In this case, the movement of the first probe 30 is restricted by the frictional force between the first probe 30 and the inner wall surrounding the first through hole 26a. Therefore, the vibration of the first probe 30 can be suppressed. For example, a case will be described in which the probe unit 20 and the stage 70 on which the test object is placed are moved while the first probe 30 and the second probe 40 are pressed against the test object. In this case, if the first probe 30 and the second probe 40 exhibit the buckling phenomenon, even if a vibration force is applied to the first probe 30 and the second probe 40 by moving the stage 70 on which the probe unit 20 and the test object are placed, the frictional force can suppress the vibration near the through holes of the first probe 30 and the second probe 40. Therefore, it is possible to suppress damage to the test object caused by the vibration of each probe.

In this embodiment, the opposing surface 21u of the probe unit 20 may have a penetrating member inclined surface 21s that is inclined with respect to the vertical direction. The penetrating member inclined surface 21s rises as it moves away from the first through hole 26a and the second through hole 26b.

In this way, by having the penetrating member inclined surface 21s on the facing surface 21u, it is possible to reduce physical interference between the measuring device 90 and the probe unit 20 when the measuring device 90 is brought close to the probe unit 20. Furthermore, when a light emitting element such as a semiconductor laser element is used as the inspection target, by arranging the penetrating member inclined surface 21s in a portion facing the light propagation path of the facing surface 21u, it is possible to reduce the light being blocked by the facing surface 21u.

The penetrating member inclined surface 21s in this embodiment may be a light reflection suppression surface.

This prevents light from the object to be inspected from being diffusely reflected at the inclined surface 21s of the penetrating member, which causes noise in the light measurement.

The inspection device 10 in this embodiment comprises a probe unit 20, a stage 70 having a mounting surface 70a on which the object to be inspected is placed, and a height adjustment member 50 arranged between the probe unit 20 and the stage 70.

In such an inspection device 10, the height adjustment member 50 can function as a spacer that defines the minimum distance between the probe unit 20 and the stage 70. Therefore, even if the position control accuracy of the mechanism that drives the probe unit 20 of the inspection device 10 is low, the distance between the probe unit 20 and the stage 70 can be precisely controlled by the height adjustment member 50. Therefore, it is possible to prevent the inspection object from being damaged due to excessive stress being applied to the inspection object caused by bringing the probe unit 20 and the stage 70 too close to each other.

In addition, by pressing the height adjustment member 50 against the mounting surface 70a of the stage 70, vibration of the probe unit 20 can be suppressed. Therefore, damage to the test object caused by each probe due to vibration of each probe can be suppressed.

The height adjustment member 50 according to this embodiment may be disposed on the opposing surface 21u of the probe unit 20. This allows the height adjustment member 50 to be retracted together with the probe unit 20. Therefore, when placing the test object on the mounting surface 70a of the stage 70, physical interference between the height adjustment member 50 and a collet or the like for moving the test object can be reduced.

The mounting surface 70a of the stage 70 in this embodiment may have a stage inclined surface 70s that is inclined with respect to the vertical direction. The stage inclined surface 70s descends as it approaches the end of the mounting surface 70a.

In this way, by having the stage inclined surface 70s on the mounting surface 70a, it is possible to reduce physical interference between the measuring device 90 and the stage 70 when the measuring device 90 is brought close to the probe unit 20. Furthermore, when a light-emitting element such as a semiconductor laser element is used as the inspection target, by arranging the stage inclined surface 70s in a portion facing the light propagation path of the mounting surface 70a, it is possible to reduce the light being blocked by the mounting surface 70a.

The stage inclined surface 70s in this embodiment may be a light reflection suppression surface.

This prevents light from the object to be inspected from being diffusely reflected on the stage inclined surface 70s, which causes noise in the light measurement.

In the inspection device 10 according to this embodiment, the stage 70 may have suction holes 72 for adsorbing the inspection object. The inspection device 10 may also include a frame body Fm that surrounds the inspection object adsorbed to the stage 70. The inspection device 10 adjusts the position of the inspection object by moving the frame body Fm.

As a result, when adjusting the position of the inspection object, it is possible to continuously adjust the position in the X-axis and Y-axis directions using only one jig, the frame body Fm. This reduces the time required for position adjustment.

The inspection method according to the present embodiment is an inspection method for inspecting the characteristics of an object to be inspected by supplying a current to the object to be inspected. A semiconductor laser device 80, which is an example of an object to be inspected, has a submount 84 having an upper surface, and an element 82 having an element upper surface, arranged on the upper surface of the submount 84, and to which a current is supplied. The submount 84 has a first electrode arranged on its upper surface, and the element 82 has a second electrode arranged on its element upper surface. The inspection method includes a first contact step of bringing the first probe 30 into contact with the first electrode, and a second contact step of bringing the second probe 40 into contact with the second electrode after the first contact step, with the first probe 30 in contact with the first electrode. The first probe 30 and the second probe 40 are included in a current circuit that supplies a current to the object to be inspected, and have an elastic restoring force.

This inspection method can reliably bring the first probe 30 into contact with the first electrode before the second probe 40 comes into contact with the second electrode. Here, the possibility of the inspection object falling over can be reduced by pressing the lower part of the inspection object (first electrode) against the mounting surface 70a before the higher part (second electrode) is pressed against the mounting surface 70a, compared to pressing the higher part against the mounting surface 70a first. This reduces damage to the inspection object caused by it falling over during inspection. The inspection method according to this embodiment can be realized, for example, by using the inspection device 10 described above.

Another inspection method according to the present embodiment is an inspection method for inspecting the characteristics of an inspection object by supplying a current to the inspection object. A semiconductor laser device 80, which is an example of an inspection object, has a submount 84 having an upper surface, and an element 82 having an element upper surface, arranged on the upper surface of the submount 84, and to which a current is supplied. The submount 84 has a first electrode arranged on its upper surface, and the element 82 has a second electrode arranged on its upper surface. The inspection method includes a supply step of supplying a current to the inspection object while the first probe 30 is in contact with the first electrode and the second probe 40 is in contact with the second electrode, a second detachment step of separating the second probe 40 from the second electrode after the supply step, and a first detachment step of separating the first probe 30 from the first electrode after the second detachment step. The first probe 30 and the second probe 40 are included in a current circuit that supplies a current to the inspection object, and have an elastic restoring force.

With this inspection method, when the second probe 40 is separated from the second electrode, the first probe 30 presses against the first electrode, so that the inspection object can be prevented from lifting up together with the second probe 40. Therefore, the inspection object can be prevented from being damaged by falling after being lifted up. In particular, as described above, relatively soft Au may be used as the second electrode, and in this case, the second probe 40 is likely to sink into the second electrode, and the second probe 40 and the second electrode are likely to stick together. Therefore, when the second probe 40 is separated from the second electrode, the inspection object is likely to lift up. Therefore, the inspection method according to this embodiment is particularly effective. The inspection method according to this embodiment can be realized, for example, by using the inspection device 10 described above.

[1-6. Inspection system]
An inspection system including an inspection device 10 according to the present embodiment will be described with reference to Figs. 31 and 32. Fig. 31 is a schematic top view showing the overall configuration of an inspection system 1 according to the present embodiment. Fig. 32 is a schematic top view showing the overall configuration of an inspection system 1a according to a modified example of the present embodiment. Figs. 31 and 32 also show a measuring device 90 used in the inspection and a semiconductor laser device 80 which is an example of an object to be inspected.

As shown in FIG. 31, the inspection system 1 of this embodiment comprises an inspection device 10 and a conveying device 5 that conveys the inspection device 10.

In the example shown in Figure 31, the conveying device 5 is a turntable having a circular shape and rotating around its center as an axis of rotation, and conveys the inspection device 10 arranged on the conveying device 5 in a circumferential direction.

The inspection system 1 includes multiple inspection devices 10. In the example shown in FIG. 31, in the inspection system 1, 12 inspection devices 10 are arranged in a circle along the edge of the circular shape of the conveying device 5. In this embodiment, the inspection devices 10 are arranged at intervals of a central angle of 30 degrees on a circumference with a radius of about 300 mm. The average movement speed of the inspection devices 10 is, for example, about 200 mm/sec, and the time required to move a central angle of 30 degrees is, for example, about 0.8 seconds.

The inspection device 10 executes each step of the inspection method described above according to the position of the destination transported by the transport device 5. That is, the inspection device 10 is first transported to the 5 o'clock position of the transport device 5 shown in FIG. 31, then stopped, and the inspection object is inserted. Next, the inspection device 10 is transported counterclockwise to the 4 o'clock position of the transport device 5, then stopped, and the position of the inspection object is adjusted. Next, the inspection device 10 is transported counterclockwise to the 3 o'clock position of the transport device 5, then stopped, and the probe unit 20 is moved. Here, the first probe 30 and the second probe 40 are brought into contact with the inspection object. Next, the inspection device 10 is transported counterclockwise to the 2 o'clock position of the transport device 5 with the first probe 30 and the second probe 40 in contact with the inspection object, and then stopped, and a predetermined current is supplied to the inspection object, the characteristics are measured (i.e., inspection is performed), and the supply of the current is stopped. Next, the inspection device 10, with the first probe 30 and the second probe 40 in contact with the inspection object, transports and stops counterclockwise from the 1 o'clock position to the 8 o'clock position of the transport device 5, and inspects the inspection object every time it stops. In the example shown in FIG. 31, seven inspections are performed. Each inspection may be a different inspection, or the same inspection may be performed multiple times. For example, the magnitude of the current and voltage supplied to the inspection object may be changed, or the waveform of the current may be changed, in each inspection. Although not shown in FIG. 31, a measuring device is placed at each of the multiple inspection positions to measure the inspection object.

Next, the inspection device 10, with the first probe 30 and the second probe 40 in contact with the test object, is transported counterclockwise to the 7 o'clock position of the transport device 5, then stopped, and the probe unit 20 is retracted. Next, the inspection device 10 is transported counterclockwise to the 6 o'clock position of the transport device 5, then stopped, and the test object is discharged.

By performing such testing in each of the 12 testing devices 10, seven test objects can be tested simultaneously, thereby reducing the time required to test a large number of test objects.

In addition, the inspection device 10 according to the present embodiment transports the inspection device 10 with the first probe 30 and the second probe 40 in contact with the inspection object. Therefore, when performing multiple inspections at different positions, it is not necessary to move and retract the probe unit 20 every time the inspection is performed. Among the various inspection steps, the movement and retraction of the probe unit 20 are particularly time-consuming steps. For example, the distance that the probe unit 20 moves in the horizontal direction is about 100 mm, and the movement takes about 0.8 seconds. In other words, the average movement speed is about 125 mm/sec. After the horizontal movement of the probe unit 20, the probe unit 20 may wait until the vibration of the probe unit 20 stops. By moving in the vertical direction after the vibration stops, the probe marks formed on the inspection object by the first probe 30 and the second probe 40 can be reduced. Furthermore, it takes about 0.8 seconds to move the probe unit 20 in the vertical direction. By reducing the number of movement and retraction steps of the probe unit 20, which take a relatively long time, the inspection time can be significantly reduced.

In addition, in this embodiment, the number of times the first probe 30 and the second probe 40 are brought into contact with and detached from the test object can be reduced, thereby reducing the number of probe marks formed on the test object.

The inspection device 10 according to this embodiment includes a height adjustment member 50 disposed between the probe unit 20 and the stage 70. This allows the height adjustment member 50 to be pressed against the mounting surface 70a of the stage 70 when the first probe 30 and the second probe 40 are brought into contact with the inspection object. Therefore, when the inspection device 10 is transported, the frictional force between the height adjustment member 50 and the mounting surface 70a can suppress vibration of the probe unit 20, the first probe 30, and the second probe 40. This prevents damage to the inspection object caused by vibration of the first probe 30 and the second probe 40.

In addition, in this embodiment, as described above, the stage contact surface 50a of the height adjustment member 50 is a rough surface, so that the frictional force between the stage contact surface 50a and the mounting surface 70a of the stage 70 can be increased. Therefore, it is possible to further suppress the vibration of the probe unit 20 relative to the stage 70 when transporting the inspection device 10, and it is possible to further suppress the vibration of the first probe 30 and the second probe 40 relative to the inspection object.

In addition, the multiple inspection devices 10 according to this embodiment can move the probe unit 20 in the radial direction of the transport device 5, as shown in FIG. 31. In other words, the inspection device 10 is equipped with a moving mechanism that moves the probe unit 20 in a direction perpendicular to the transport direction of the inspection device 10. The moving mechanism is realized by the unit moving member 16, etc., described above. Such a moving mechanism can reduce physical interference between a collet, etc. used to move the inspection object and the probe unit 20, etc., when the inspection object is introduced into the inspection device 10 from outside the transport device 5.

Next, an inspection system 1a according to a modified example of the present embodiment will be described with reference to Fig. 32. As shown in Fig. 32, the inspection system 1a according to this modified example includes an inspection device 10 and a transport device 5a that transports the inspection device 10. The inspection system 1a according to this modified example also includes multiple inspection devices 10, similar to the inspection system 1 described above.

The conveying device 5a according to this modified example differs from the conveying device 5 described above mainly in the shape of the conveying path. The conveying device 5a according to this modified example has an elliptical shape, and multiple inspection devices 10 are arranged in an elliptical shape along the periphery of the conveying device 5a. The multiple inspection devices 10 are conveyed along the elliptical conveying path. Therefore, the conveying device 5a has both a conveying path that conveys the inspection devices 10 in a straight line and a conveying path that conveys them in an arc shape. The average moving speed of the inspection devices 10 is, for example, about 190 mm/sec, and the conveying distance per conveying is, for example, 150 mm. The time required for one conveying is, for example, about 0.8 seconds.

In the inspection system 1a according to this modified example, the inspection device 10 is transported with the first probe 30 and the second probe 40 of the inspection device 10 in contact with the inspection object. As a result, the inspection system 1a according to this modified example also achieves the same effects as the inspection system 1 described above.

[1-7. Manufacturing method of semiconductor laser device]
A method for manufacturing the semiconductor laser device 80 according to this embodiment will be described with reference to Fig. 33. Fig. 33 is a flow chart showing the flow of the method for manufacturing the semiconductor laser device 80 according to this embodiment.

As shown in Figure 33, first, the semiconductor laser device 80 is assembled (S10). In this embodiment, the semiconductor laser device 80 includes a submount 84 and an element 82. The element 82 is a semiconductor laser element. The semiconductor laser device 80 is assembled, for example, by preparing the submount 84 and placing the element 82 on the upper surface of the submount 84.

Next, the semiconductor laser device 80 is inspected (S20). In the manufacturing method for the semiconductor laser device 80 according to the present embodiment, the semiconductor laser device 80 is inspected as the inspection object using the inspection method according to the present embodiment.

As described above, the semiconductor laser device 80 according to the present embodiment can be manufactured. According to the manufacturing method for the semiconductor laser device 80 according to the present embodiment, by using the inspection method according to the present embodiment, the same effect as the inspection method described above can be achieved, and damage to the semiconductor laser device 80 during inspection can be reduced.

[1-8. Modified examples of probe unit]
A probe unit according to a modified example of this embodiment will be described.

[1-8-1. Modification 1]
A probe unit according to a first modified example of the present embodiment will be described with reference to Fig. 34. Fig. 34 is a schematic cross-sectional view showing a part of the probe unit according to this modified example. Fig. 34 shows the configuration of the first through-hole 26a of the probe-penetrating member 23 and its surroundings.

34, the probe unit of this modified example differs from the above-described probe unit 20 in the configuration of the first probe 130. The first probe 130 of this modified example has a conductor 36 and an insulating film 38.

The conductor 36 is a conductive member having an elastic restoring force. The conductor 36 is, for example, a metal wire. The conductor 36 is fixed to the probe fixing member 24 and penetrates the probe penetrating member 23, similar to the first probe 30 described above.

The insulating film 38 is an electrically insulating film that covers a part of the conductor 36. In this modification, when the lower end 131 of the first probe 130 is not in contact with the test object, the insulating film 38 covers the part of the conductor 36 that is located above the probe penetrating member 23. When the lower end 131 of the first probe 130 is not in contact with the test object, the insulating film 38 may cover the part of the conductor 36 that is located in the cavity 21v. As shown in FIG. 34, the thickness of the first probe 130 at the part where the insulating film 38 covers the conductor 36 may be larger than the diameter of the first through hole 26a. This allows the insulating film 38 to suppress the first probe 130 from falling downward from the first through hole 26a.

In addition, the second probe may also have a conductor and an insulating film, similar to the first probe 130.

[1-8-2. Modification 2]
A probe unit according to a second modified example of the present embodiment will be described with reference to Fig. 35. Fig. 35 is a schematic cross-sectional view showing a part of the probe unit according to this modified example.

The probe unit of this modified example differs from the probe unit of modified example 1 in the configuration of the probe-penetrating member 123.

The probe penetrating member 123 according to this modification has a first through hole 126a. The probe penetrating member 123 has a plurality of guide members 123a, 123c, and 123e arranged at a distance from each other in the vertical direction. A first guide hole through which the first probe 130 penetrates is formed in each of the plurality of guide members 123a, 123c, and 123e. As shown in FIG. 35, the guide member 123a has a first guide hole 126aa. In addition, the guide member 123c arranged below the guide member 123a has a first guide hole 126ca. In addition, the guide member 123e arranged below the guide member 123c has a first guide hole 126ea. In this modification, each guide member is formed of an electrically insulating material. For each guide member, for example, aromatic polyester, nylon, Teflon (registered trademark), fluororesin such as polytetrafluoroethylene, or ceramics can be used. When an insulating film is formed on the portion of the first probe 130 that comes into contact with each guide member, a conductive member such as a metal can be used as each guide member.

In this modified example, a spacer is disposed between two adjacent guide members. Spacer 123b is disposed between guide member 123a and guide member 123c. Spacer 123d is disposed between guide member 123c and guide member 123e.

A first spacer hole 126ba is formed in spacer 123b, and a first spacer hole 126da is formed in spacer 123d.

The first through hole 126a of the probe-penetrating member 123 includes first guide holes 126aa, 126ca, 126ea and first spacer holes 126ba, 126da. That is, the first probe 130 penetrates the first guide holes 126aa, 126ca, 126ea and the first spacer holes 126ba, 126da. The centers of the first guide holes 126aa, 126ca, 126ea are at the same position in the horizontal direction (i.e., the same position in the XY plane), and the penetrating first probe 130 is perpendicular to the bottom surface of the probe-penetrating member 123.

The diameters of the first spacer holes 126ba and 126da are larger than the diameters of the first guide holes 126aa, 126ca, and 126ea. As a result, the first probe 130 is guided by the first guide holes 126aa, 126ca, and 126ea. Here, by making the thickness of each guide member smaller than the thickness of each spacer, the area of contact between the first probe 130 and the probe-penetrating member 123 in the first through hole 126a can be reduced, thereby reducing friction with the probe-penetrating member 123. To further reduce friction, the corners (edges) on the periphery of each first through hole of each guide member may be eliminated.

In addition, the inclination of the first probe 130 can be reduced by making the gap between the first probe 130 and each of the first guide holes formed in each guide member arranged in the vertical direction sufficiently small.

In addition, by setting the thickness of each spacer to be equal to or less than a predetermined thickness determined based on the spring constant of the first probe 130, buckling of the first probe 130 in each first spacer hole can be prevented.

Although not shown, the second through hole of the probe-penetrating member 123 can also be configured in the same manner as the first through hole 126a.

[1-8-3. Modification 3]
A probe unit according to a third modified example of the present embodiment will be described with reference to Fig. 36. Fig. 36 is a schematic cross-sectional view showing a part of the probe unit according to this modified example.

The probe unit of this modified example differs from the probe unit of modified example 2 in the configuration of the probe-penetrating member 223.

The probe penetrating member 223 has a plurality of guide members 223a, 223c that are spaced apart from each other in the vertical direction. A first guide hole through which the first probe 130 penetrates is formed in each of the plurality of guide members 223a, 223c. As shown in FIG. 36, a first guide hole 226aa is formed in the guide member 223a. In addition, a first guide hole 226ca is formed in the guide member 223c that is disposed below the guide member 223a.

In this modified example, a spacer 223b is disposed between two adjacent guide members 223a and 223c. A first spacer hole 226ba is formed in the spacer 223b.

The first through hole 226a of the probe-penetrating member 223 includes first guide holes 226aa, 226ca and a first spacer hole 226ba. That is, the first probe 130 penetrates the first guide holes 226aa, 226ca and the first spacer hole 226ba.

The diameter of the first spacer hole 226ba is larger than the diameters of the first guide holes 226aa and 226ca. As a result, the first probe 130 is guided by the first guide holes 226aa and 226ca. Also, as with the probe-penetrating member 123 according to the second modification, by making the thickness of each guide member smaller than the thickness of the spacer 223b, the area of contact between the first probe 130 and the probe-penetrating member 223 in the first through hole 226a can be reduced, thereby reducing friction with the probe-penetrating member 223.

In this modified example, the gap between the first guide hole 226aa of the guide member 223a that is closest to the probe fixing member (i.e., that is located at the top) among the multiple guide members, and the first probe 130 is larger than the gap between the first guide hole 226ca of the guide member 223c that is farthest from the probe fixing member (i.e., that is located at the bottom) among the multiple guide members, and the first probe 130. This allows the first guide hole 226ca of the guide member 223c to precisely regulate the position of the first probe 130 while reducing friction between the guide member 223a and the first probe 130.

In addition, in this modified example, the thickness of the guide member 223a that is closest to the probe fixing member among the multiple guide members is greater than the thickness of the guide member 223c that is farthest from the probe fixing member among the multiple guide members. Here, as described above, when each probe is pressed against the test object, it buckles in the cavity 21v. Therefore, the stress associated with the buckling of the first probe 130 is large in the part of the first probe 130 located in the first through hole 226a that is closest to the cavity 21v, i.e., located at the top. As in this modified example, by increasing the thickness of the guide member 223a that is located at the top of the multiple guide members, the inclination of the first probe 130 in the vertical direction within the first through hole 226a can be reduced.

Although not shown, the second through hole of the probe-penetrating member 223 can also be configured in the same manner as the first through hole 226a.

[1-8-4. Modification 4]
A probe unit according to a fourth modified example of the present embodiment will be described with reference to Fig. 37. Fig. 37 is a schematic cross-sectional view showing a part of the probe unit according to this modified example.

The probe unit of this modified example differs from the probe unit of modified example 3 in the configuration of the first probe 130a.

The first probe 130a has a conductor 36 and an insulating film 338. In the present modified example, the insulating film 338 is formed on the portion of the first probe 130a that contacts each probe-penetrating member 223. This makes it possible to prevent a short circuit from occurring between the first probe 130a and other conductive members via the probe-penetrating member 223. In addition, since a conductive member can be used in the probe-penetrating member 223, the degree of freedom in the material used in the probe-penetrating member 223 can be increased.

The second probe may also be configured in the same manner as the first probe 130a.

[1-8-5. Modification 5]
A probe unit according to a fifth modified example of the present embodiment will be described with reference to Fig. 38. Fig. 38 is a schematic top view showing a part of a probe-penetrating member 423 of the probe unit according to this modified example.

The probe unit of this modified example differs from the probe unit 20 described above in the configuration of the first through hole 426a of the probe-penetrating member 423.

The probe-penetrating member 423 according to this modified example has a first inner wall 426w surrounding the first through hole 426a. In a top view of the probe-penetrating member 423, the first inner wall 426w has one or more first convex portions 426P that smoothly protrude toward the first through hole. This reduces the contact area between the first inner wall 426w and the first probe 30. Therefore, friction between the probe-penetrating member 423 and the first probe 30 can be reduced. In addition, since the first convex portion 426P protrudes smoothly and does not have corners, wear between the first probe 30 and the first inner wall 426w can be reduced. In addition, dust generated by the first probe 30 being scraped by the first convex portion 426P and adhering to the test object and causing a change in characteristics after the test can be reduced.

[1-8-6. Modification 6]
A probe unit according to a sixth modified example of the present embodiment will be described with reference to Fig. 39. Fig. 39 is a schematic top view showing a part of the probe-penetrating member 23 of the probe unit according to this modified example.

The probe unit of this modified example differs from the probe unit 20 described above in the configuration of the first probe 430.

The first probe 430 according to this modified example has a rectangular cross-sectional shape. This can reduce the contact area between the probe-penetrating member 23 and the first probe 430 in the first through hole 26a. Therefore, the friction between the probe-penetrating member 23 and the first probe 430 can be reduced. The corners of the cross section of the first probe 430 may be formed to have a smooth curved shape. This can reduce wear of the first probe 430 and the probe-penetrating member 23. Since the first probe 430 has a rectangular cross-sectional shape, it can be easily created by etching or cutting from a flat plate. This can also be used in a probe unit such as the fourth embodiment described below.

[1-8-7. Modification 7]
A probe unit according to a seventh modified example of the present embodiment will be described with reference to Fig. 40. Fig. 40 is a schematic cross-sectional view showing a part of the probe unit according to this modified example. Fig. 40 also shows a semiconductor laser device 80 as an example of an object to be inspected.

The probe unit of this modified example differs from the probe unit of modified example 1 in the configuration of the unit body 521 and the second probe 140.

The second probe 140 according to this modification has a conductor 46 and an insulating film 48. The conductor 46 has the same configuration as the conductor 36 of the first probe 130, and the insulating film 48 has the same configuration as the insulating film 38 of the first probe 130. In other words, the first probe 130 and the second probe 140 have the same configuration.

The unit body 521 has a probe penetrating member 523 and a probe fixing member 524.

The probe penetrating member 523 has an opposing surface 521u facing the test object, and a first upper surface 523a and a second upper surface 523b on the back side of the opposing surface 521u. A first through hole 526a and a second through hole 526b are formed in the probe penetrating member 523. The first through hole 526a penetrates in the vertical direction from the first upper surface 523a to the opposing surface 521u. The second through hole 526b penetrates in the vertical direction from the second upper surface 523b to the opposing surface 521u. The diameter of the first through hole 526a is larger than the diameter of the conductor 36 of the first probe 130 and smaller than the diameter of the part of the first probe 130 on which the insulating film 38 is formed. The diameter of the second through hole 526b is larger than the diameter of the conductor 46 of the second probe 140 and smaller than the diameter of the part of the second probe 140 on which the insulating film 48 is formed. The lower end of the portion of the first probe 130 on which the insulating film 38 is formed is in contact with the upper surface (first upper surface 523a) of the first through hole 526a. The lower end of the portion of the second probe 140 on which the insulating film 48 is formed is in contact with the upper surface (second upper surface 523b) of the second through hole 526b. As shown in Fig. 40, the first upper surface 523a and the second upper surface 523b are located at different positions in the up-down direction, and the second upper surface 523b is located higher than the first upper surface 523a.

The probe fixing member 524 has a first lower surface 524a and a second lower surface 524b facing the probe penetrating member 523, and an upper surface 521t on the back side thereof. A first fixing hole 527a and a second fixing hole 527b are formed in the probe fixing member 524. The first fixing hole 527a penetrates in the vertical direction from the upper surface 521t to the first lower surface 524a. The second fixing hole 527b penetrates in the vertical direction from the upper surface 521t to the second lower surface 524b. The diameter of the first fixing hole 527a is larger than the diameter of the conductor 36 of the first probe 130 and smaller than the diameter of the part of the first probe 130 on which the insulating film 38 is formed. The diameter of the second fixing hole 527b is larger than the diameter of the conductor 46 of the second probe 140 and smaller than the diameter of the part of the second probe 140 on which the insulating film 48 is formed. The upper end of the portion of the first probe 130 on which the insulating film 38 is formed is in contact with the lower surface (first lower surface 524a) of the first fixing hole 527a. The upper end of the portion of the second probe 140 on which the insulating film 48 is formed is in contact with the lower surface (second lower surface 524b) of the second fixing hole 527b. As shown in Fig. 40, the first lower surface 524a and the second lower surface 524b are located at different positions in the up-down direction, and the second lower surface 524b is located higher than the first lower surface 524a.

In this modified example, since the first probe 130 and the second probe 140 have the same configuration, the length of the portion of the first probe 130 where the insulating film 38 is not formed on the lower end 131 side and the length of the portion of the second probe 140 where the insulating film 48 is not formed on the lower end 141 side are also equal. Therefore, the difference in height between the first upper surface 523a and the second upper surface 523b of the probe penetrating member 523 determines the difference in the vertical position of the lower end 131 of the first probe 130 and the vertical position of the lower end 141 of the second probe 140. As a result, by adjusting the difference in height between the first upper surface 523a and the second upper surface 523b, the difference in the vertical position of the lower end 131 of the first probe 130 and the vertical position of the lower end 141 of the second probe 140 can be adjusted.

The height difference between the first upper surface 523a and the second upper surface 523b of the probe penetrating member 523 may be equal to the height difference between the first lower surface 524a and the second lower surface 524b of the probe fixing member 524. In addition, the length from the first upper surface 523a of the probe penetrating member 523 to the first lower surface 524a of the probe fixing member 524 and the length from the second upper surface 523b of the probe penetrating member 523 to the second lower surface 524b of the probe fixing member 524 may be equal to the length of the part covered by the insulating film 38 of the first probe 130 (i.e., the length of the part covered by the insulating film 48 of the second probe 140). This allows the relative position of each probe to the probe fixing member 524 to be adjusted (i.e., positioned) by each insulating film.

[1-8-8. Modification 8]
A probe unit according to an eighth modified example of the present embodiment will be described with reference to Figs. 41 to 43. Figs. 41 to 43 are schematic side views showing the configuration of each probe of the probe unit according to this modified example. Figs. 41 to 43 also show a height adjustment member 50 and a semiconductor laser device 80, which is an example of an object to be inspected.

Various examples are envisaged for the relationship between the length L1 of the portion protruding from the opposing surface 21u of the first probe 30, the length L2 of the portion protruding from the opposing surface 21u of the second probe 40, the height H of the height adjustment member 50, the height d1 from the underside of the submount 84 of the semiconductor laser device 80 to the first electrode, and the height d2 from the underside of the submount 84 to the second electrode of the element 82.

For example, as shown in Figure 41, the following equation (8) may hold:

L1>L2>H (8)

Furthermore, as shown in FIG. 42, it is possible that the following equation (9) holds:

L1>H>L2 (9)

Furthermore, as shown in FIG. 43, it is possible that the following equation (10) holds:

H>L1>L2 (10)

In any of the above cases, if the following equation (11) is satisfied, the height adjustment member 50 can be brought into contact with the stage 70 without physical interference between the semiconductor laser device 80 and the opposing surface 21u.

H>d2>d1 (11)

41 to 43, the relative position of the semiconductor laser device 80 with respect to the height adjustment member 50 when the height adjustment member 50 is in contact with the stage 70 is shown by a dashed line. As shown in Fig. 41 to 43, the height adjustment member 50 can be brought into contact with the stage 70 without physical interference between the semiconductor laser device 80 and the opposing surface 21u.

[1-8-9. Modification 9]
A probe unit according to a ninth modified example of the present embodiment will be described with reference to Fig. 44. Fig. 44 is a schematic cross-sectional view showing a part of the probe unit according to this modified example. Fig. 44 also shows a detailed configuration of a semiconductor laser device 80 as an example of an object to be inspected.

The probe unit of this modified example differs from the above-mentioned probe unit 20 in the configuration of the first probe 230, the second probe 240, and the unit main body 621.

As shown in Fig. 44, the semiconductor laser device 80 has a submount 84 and an element 82. The submount 84 has a lower surface 84b and an upper surface 84a on the reverse side of the lower surface 84b. A first electrode 85 is disposed on the upper surface 84a of the submount 84.

The element 82 has an element lower surface 82b and an element upper surface 82a on the back side of the element lower surface 82b. The element 82 is disposed on the upper surface 84a of the submount 84. The element 82 has a second electrode 83 disposed on the element upper surface 82a.

In addition, each of the above-mentioned semiconductor laser devices 80 has a detailed configuration as shown in Figure 44.

In this modified example, the elastic modulus of the first probe 230 and the second probe 240 is the same. For example, the first probe 230 and the second probe 240 may be formed of the same material. The second probe 240 may be thinner than the first probe 230. This makes the spring constant of the second probe 240 smaller than the spring constant of the first probe 230, thereby reducing damage to the second electrode 83 with which the second probe 240 comes into contact.

The unit body 621 has a probe penetrating member 623 and a probe fixing member 624.

The probe-penetrating member 623 has an opposing surface 621u facing the test object, and a first upper surface 623a and a second upper surface 623b on the back side of the opposing surface 621u. A first through hole 626a and a second through hole 626b are formed in the probe-penetrating member 623. The first through hole 626a penetrates in the vertical direction from the first upper surface 623a to the opposing surface 621u. The second through hole 626b penetrates in the vertical direction from the second upper surface 623b to the opposing surface 621u. In this modified example, as shown in FIG. 44, the first upper surface 623a and the second upper surface 623b are at the same vertical position.

The probe fixing member 624 has a first lower surface 624a and a second lower surface 624b facing the probe penetrating member 623, and an upper surface 621t on the back side thereof. A first fixing hole 627a and a second fixing hole 627b are formed in the probe fixing member 624. The first fixing hole 627a penetrates in the vertical direction from the upper surface 621t to the first lower surface 624a. The second fixing hole 627b penetrates in the vertical direction from the upper surface 621t to the second lower surface 624b. As shown in FIG. 44, the first lower surface 624a and the second lower surface 624b are located at different vertical positions, and the second lower surface 624b is located above the first lower surface 624a.

Because the unit body 621 has the above-described configuration, the length from the probe fixing member 624 to the probe penetrating member 623 of the second probe 240 may be longer than the length from the probe fixing member 624 to the probe penetrating member 623 of the first probe 230. This makes the second probe 240 more likely to buckle than the first probe 230. In other words, the spring constant of the second probe 240 is smaller than the spring constant of the first probe 230. This makes it possible to reduce the elastic restoring force accompanying the buckling of the second probe 240, thereby reducing damage to the second electrode 83 with which the second probe 240 comes into contact.

44, the first upper surface 623a and the second upper surface 623b are at the same vertical position, but the second upper surface 623b may be disposed below the first upper surface 623a. This allows the length from the probe fixing member 624 of the second probe 240 to the probe penetrating member 623 to be further increased. Therefore, the elastic restoring force accompanying buckling of the second probe 240 can be further reduced.

[1-8-10. Modification 10]
A probe unit according to a tenth modification of the present embodiment will be described with reference to Fig. 45. Fig. 45 is a schematic cross-sectional view showing a part of the probe unit according to this modification. Fig. 45 also shows a detailed configuration of a semiconductor laser device 80 as an example of an object to be inspected.

The probe unit of this modified example differs from the probe unit of modified example 9 in the configuration of the first probe 330 and the second probe 340.

In this modified example, the radius of curvature of the lower end 341 of the second probe 340 is larger than the radius of curvature of the lower end 331 of the first probe 330.

This reduces the pressure with which the lower end 341 of the second probe 340 presses the second electrode 83 of the semiconductor laser device 80. Therefore, damage to the second electrode 83 can be reduced.

Furthermore, the second probe 340 may be thinner than the first probe 330. This makes the spring constant of the second probe 340 smaller than the spring constant of the first probe 330, thereby further reducing damage to the second electrode 83 with which the second probe 340 comes into contact.

[1-8-11. Example]
Examples of the penetrating member inclined surface 21s of the probe unit 20 and the stage inclined surface 70s of the stage 70 according to this embodiment will be described with reference to Figs. 46 to 50. Figs. 46 and 47 are schematic perspective and cross-sectional views showing a first example of the penetrating member inclined surface 21s and the stage inclined surface 70s according to this embodiment, respectively. Fig. 47 shows a cross section shown by the dashed line in Fig. 46. Fig. 48 is a schematic cross-sectional view showing a second example of the penetrating member inclined surface 21s and the stage inclined surface 70s according to this embodiment. Fig. 49 is a schematic perspective view showing a third example of the penetrating member inclined surface 21s and the stage inclined surface 70s according to this embodiment. Fig. 50 is a schematic cross-sectional view showing a fourth example of the penetrating member inclined surface 21s according to this embodiment.

46 and 47, in the first embodiment, a planar (i.e. flat) penetrating member inclined surface 21s is formed on the portion of the facing surface 21u that faces the laser light LB from the semiconductor laser device 80. Also, a planar stage inclined surface 70s is formed on the portion of the mounting surface 70a that faces the laser light LB from the semiconductor laser device 80.

47, the inclination angle β2 (with respect to a horizontal plane perpendicular to the vertical direction) of the penetrating member inclined surface 21s and the stage inclined surface 70s may be determined according to the divergence angle α of the laser light LB in the vertical direction. For example, when a GaN-based or AlGaInAsP-based semiconductor laser element having a divergence angle α of about 46 degrees is used as the element 82 of the semiconductor laser device 80, the inclination angle β2 may be set to about 23 degrees.

Note that the inclination angle β2 may be increased as in the second embodiment shown in Figure 48. This reduces physical interference between the measuring device 90 and the stage 70 and the probe unit 20. For example, the inclination angle β2 may be 45 degrees or more.

On the other hand, the inclination angle β2 may be 45 degrees or less. This maximizes the path of heat diffusion from the semiconductor laser device 80 to the stage 70. This improves the heat dissipation characteristics of the stage 70.

Also, as in the third embodiment shown in Fig. 49, the penetrating member inclined surface 21s and the stage inclined surface 70s may have a curved shape according to the vertical divergence angle α1 and the horizontal divergence angle α2 of the laser light LB. In the example shown in Fig. 49, the penetrating member inclined surface 21s and the stage inclined surface 70s have a side shape of an elliptical cone with the light emitting point of the semiconductor laser device 80 as the apex.

50, when the opposing surface 21u has a penetrating member inclined surface 21s, the first through hole 26a through which the first probe 30 passes may pass through the penetrating member inclined surface 21s. Similarly, the second through hole 26b through which the second probe 40 passes may pass through the penetrating member inclined surface 21s.

(Embodiment 2)
A probe unit according to embodiment 2 will be described. The probe unit according to this embodiment differs from the probe unit 20 according to embodiment 1 in the shape of each probe. The probe unit according to this embodiment will be described below with reference to Figures 51 to 53, focusing on the differences from the probe unit 20 according to embodiment 1.

Figures 51 and 52 are respectively a schematic top view and a cross-sectional view showing the configuration of a probe unit 720 according to this embodiment. Figure 52 shows a cross section taken along line XXXXXII-XXXXXII shown in Figure 51. Figure 53 is a schematic cross-sectional view showing the state in which a height adjustment member 50 arranged on a probe unit 720 according to this embodiment is in contact with a stage 70.

As shown in Figures 51 and 52, the probe unit 720 of this embodiment differs from the probe unit 20 of embodiment 1 in the shapes of the first probe 30 and the second probe 40.

The first probe 30 according to this embodiment has a first deviation portion 34 that is deviated in a first deviation direction from the lower end 31 of the first probe 30 in a top view. In this embodiment, the first deviation direction is the positive direction in the Y-axis direction. The first deviation portion 34 includes the upper end 32 of the first probe 30 and is inclined in the positive direction in the Y-axis direction with respect to the up-down direction.

The second probe 40 according to this embodiment has a second deflection portion 44 that is deflected in a second deflection direction from the lower end 41 of the second probe 40 in a top view. In this embodiment, the second deflection direction is the negative Y-axis direction. The second deflection portion 44 includes the upper end 42 of the second probe 40 and is inclined in the negative Y-axis direction with respect to the up-down direction.

To achieve this configuration, the first fixing hole 27a formed in the probe fixing member 24 of the probe unit 720 may be positioned at a position offset from directly above the first through hole 26a, or may extend in a direction inclined relative to the vertical direction. Similarly, the second fixing hole 27b may be positioned at a position offset from directly above the second through hole 26b, or may extend in a direction inclined relative to the vertical direction.

As described above, the first probe 30 and the second probe 40 are bent in advance without coming into contact with the test object. This makes it easier to buckle each probe, thereby improving the linearity of the elastic restoring force relative to the amount of displacement of the lower end of each probe. In other words, the dependency of the spring constant of each probe on the amount of displacement can be reduced. This makes it easier to control the magnitude of the elastic restoring force. Furthermore, because each probe is bent in advance, the direction of buckling of each probe can be controlled.

In addition, in this embodiment, the first and second deflection directions are non-parallel to the arrangement direction of the first probe 30 and the second probe 40. As shown in FIG. 53, the buckling direction of the first probe 30 is parallel to the first deflection direction, and the buckling direction of the second probe 40 is parallel to the second deflection direction, so that the first probe 30 and the second probe 40 can be prevented from deflecting in their arrangement direction due to buckling. Therefore, the first probe 30 and the second probe 40 can be prevented from contacting each other. In this embodiment, the first deflection direction is opposite to the second deflection direction. As a result, as shown in FIG. 53, the direction in which the first probe 30 is displaced by buckling (negative direction in the Y-axis direction) and the direction in which the second probe 40 is displaced by buckling (positive direction in the Y-axis direction) are opposite to each other, so that the first probe 30 and the second probe 40 can be prevented from contacting each other when they buckle.

In addition, since the first probe 30 can suppress vibrations in a direction parallel to the first deflection direction, and the second probe 40 can suppress vibrations in a direction parallel to the second deflection direction, when the probe unit 720 is transported, the first deflection direction and the second deflection direction may be parallel to the transport direction. This makes it possible to suppress vibrations of each probe accompanying the transport of the probe unit 720.

The first and second deflection directions may be parallel to the maximum acceleration direction during transportation of an inspection device equipped with the probe unit 720. For example, when an inspection device is transported along a circumference as in the above-described inspection system 1, each deflection direction may be parallel to a tangent direction of the circumference. This makes it possible to suppress vibration of each probe accompanying transportation of the probe unit 720.

The probe unit 720 having the above-described configuration can also suppress damage to the test subject, similar to the probe unit 20 of embodiment 1.

(Embodiment 3)
A probe unit according to embodiment 3 will be described. The probe unit according to this embodiment differs from the probe unit 720 according to embodiment 2 mainly in the deflection direction of each probe. The probe unit according to this embodiment will be described below with reference to Figures 54 and 55, focusing on the differences from the probe unit 720 according to embodiment 2.

Figure 54 is a schematic cross-sectional view showing the configuration of the probe unit 720a according to this embodiment. Figure 55 is a schematic cross-sectional view showing the state in which the unit contact surface 150b of the height adjustment member 150 arranged on the stage 70 according to this embodiment is in contact with the probe unit 720a.

In the probe unit 720a according to the present embodiment, the first deflection direction (negative X-axis direction) of the first probe 30 and the second deflection direction (negative X-axis direction) of the second probe 40 are the same direction and are parallel to the arrangement direction (X-axis direction) of the first probe 30 and the second probe 40. In this case, as shown in FIG. 55, the buckling directions of the first probe 30 and the second probe 40 are also the same direction. Therefore, even in such a configuration, contact between the first probe 30 and the second probe 40 can be suppressed. In addition, in this configuration, the distance Δz in the vertical direction between the first probe 30 and the second probe 40 may be increased. This configuration can be realized by making the pre-bending angle of the second probe 40 larger than the pre-bending angle of the first probe 30. This can further suppress contact between the first probe 30 and the second probe 40.

In this embodiment, the height adjustment member 150 is placed on the mounting surface 70a of the stage 70. The unit body 21 has an opposing surface 21u that faces the height adjustment member 150. At least one of the unit contact surface 150b and the opposing surface 21u is a rough surface. In this embodiment, the unit contact surface 150b is a rough surface. Even with this configuration, by pressing the probe unit 720a against the height adjustment member 150, the distance between the opposing surface 21u of the probe unit 720a and the mounting surface 70a of the stage 70 can be precisely controlled, and vibration of the probe unit 720a can be suppressed.

Moreover, the height adjustment member 150 according to this embodiment has a positioning portion 156. The positioning portion 156 is a member used to position the test object, and for example, the test object can be placed at a predetermined position by pressing the test object against the positioning portion 156.

The probe unit 720a having the above-described configuration can also suppress damage to the test subject, similar to the probe unit 20 of embodiment 1.

(Embodiment 4)
A probe unit according to embodiment 4 will be described. The probe unit according to this embodiment differs from the probe unit 720 according to embodiment 2 mainly in the shape of each probe. The probe unit according to this embodiment will be described below with reference to Figs. 56 and 57, focusing on the differences from the probe unit 720 according to embodiment 2.

Figure 56 is a schematic cross-sectional view showing the configuration of a probe unit 820 according to this embodiment. Figure 57 is a schematic cross-sectional view showing a state in which a height adjustment member 50 arranged in a probe unit 820 according to this embodiment is in contact with a stage 70.

The probe unit 820 of this embodiment differs from the probe unit 720 of embodiment 2 in the shapes of the first probe 830 and the second probe 840.

The first probe 830 has a first deviation portion 834 that is deviated from the lower end 831 of the first probe 830 in a first deviation direction in a top view. The distance between the position of the upper end 832 of the first probe 830 and the position of the lower end 831 in a top view is 0. In other words, the position of the upper end 832 of the first probe 830 and the position of the lower end 831 in a top view are the same. In other words, an axis 830A parallel to the vertical direction passes through the lower end 831 and the upper end 832 of the first probe 830. In this embodiment, the first deviation portion 834 of the first probe 830 has a U-shape. The first deviation direction is a positive direction in the X-axis direction.

The second probe 840 has a second deviation portion 844 that is deviated from the lower end 841 of the second probe 840 in a second deviation direction in a top view. The distance between the position of the upper end 842 of the second probe 840 and the position of the lower end 841 in a top view is 0. In other words, the position of the upper end 842 of the second probe 840 and the position of the lower end 841 in a top view are the same. In other words, an axis 840A parallel to the vertical direction passes through the lower end 841 and the upper end 842 of the second probe 840. In this embodiment, the second deviation portion 844 of the second probe 840 has a U-shaped shape. The second deviation direction is the negative direction in the X-axis direction.

In each probe having such a configuration, when the lower end of each probe comes into contact with the test object and receives an upward force, the deformation is concentrated near each deflection portion. Therefore, the displacement in the direction perpendicular to the up-down direction in the portion corresponding to each through-hole of each probe can be reduced. Therefore, the friction between each probe and the probe-penetrating member 23 can be reduced.

In addition, in this embodiment, the first and second deflection directions are parallel to the arrangement direction of the first probe 830 and the second probe 840. However, since the first deflection direction is a direction away from the second probe 840 and the second deflection direction is a direction away from the first probe 830, contact between the first probe 830 and the second probe 840 can be suppressed.

(Embodiment 5)
A probe unit according to embodiment 5 will be described. The probe unit according to this embodiment differs from probe unit 820 according to embodiment 4 mainly in the deflection direction of each probe. The probe unit according to this embodiment will be described below with reference to Figures 58 to 60, focusing on the differences from probe unit 820 according to embodiment 4.

Figures 58, 59, and 60 are respectively a schematic top view, a first cross-sectional view, and a second cross-sectional view showing the configuration of a probe unit 820a according to this embodiment. Figure 59 shows a cross-section taken along line XXXXXIX-XXXXXIX in Figure 58. Figure 60 shows a cross-section taken along line XXXXXX-XXXXXX in Figure 58.

The probe unit 820a of this embodiment differs from the probe unit 820 of embodiment 4 in the deflection directions of the first probe 830 and the second probe 840.

The first probe 830 has a first deflection portion 834 that is deflected in a first deflection direction from a lower end 831 of the first probe 830 in a top view. In this embodiment, the first deflection direction is a positive direction in the Y-axis direction.

The second probe 840 has a second deflection portion 844 that is deflected in a second deflection direction from the lower end 841 of the second probe 840 in a top view. In this embodiment, the second deflection direction is a positive direction in the Y-axis direction.

In this embodiment, the first and second deflection directions are the same direction. However, in this embodiment, the first and second deflection directions are perpendicular to the arrangement direction of the first probe 830 and the second probe 840. Therefore, contact between the first probe 830 and the second probe 840 can be suppressed.

(Embodiment 6)
A probe unit according to embodiment 6 will be described. The probe unit according to this embodiment differs from probe unit 720 according to embodiment 2 mainly in the number of probes. The probe unit according to this embodiment will be described below with reference to Figures 61 to 63, focusing on the differences from probe unit 720 according to embodiment 2.

Figures 61, 62, and 63 are respectively a schematic top view, a first cross-sectional view, and a second cross-sectional view showing the configuration of a probe unit 920 according to this embodiment. Figure 62 shows a cross-section taken along line XXXXXXII-XXXXXXII in Figure 61. Figure 63 shows a cross-section taken along line XXXXXXIII-XXXXXXIII in Figure 61.

The probe unit 920 of this embodiment differs from the probe unit 720 of embodiment 2 in the number of first probes 30 and second probes 40.

The probe unit 920 includes a plurality of first probes 30 electrically connected in parallel to each other, and a plurality of second probes 40 electrically connected in parallel to each other. In the example shown in FIG. 61 to FIG. 63, the probe unit 920 includes six first probes 30 and three second probes 40. In this embodiment, the semiconductor laser device 80 to be inspected has first electrodes arranged on both sides of the element 82 on the upper surface of the submount 84, and three first probes 30 are in contact with one first electrode, and three first probes 30 are in contact with the other first electrode. Three second probes 40 are in contact with the second electrode of the element 82.

As a result, the force required to hold down the semiconductor laser device 80 can be shared by the multiple first probes 30 and the multiple second probes 40, reducing the force that each probe applies to the semiconductor laser device 80. This reduces damage to the semiconductor laser device 80.

In addition, since current is supplied to the semiconductor laser device 80 using multiple first probes 30 and multiple second probes 40, it becomes easier to supply more current.

In addition, in this embodiment, similar to the probe unit 720 according to the second embodiment, each of the first probes 30 is inclined in a first deflection direction (positive Y-axis direction), and each of the second probes 40 is inclined in a second deflection direction (negative Y-axis direction). This makes it possible to prevent the first probes 30 from contacting each other, and also prevents the second probes 40 from contacting each other.

(Seventh embodiment)
A probe unit according to embodiment 7 will be described. The probe unit according to this embodiment differs from the probe unit 20 according to embodiment 1 in that it includes an elastic member in addition to the probe. The probe unit according to this embodiment will be described below with reference to Figures 64 to 66, focusing on the differences from the probe unit 20 according to embodiment 1.

Figures 64 and 65 are respectively a schematic top view and a cross-sectional view showing the configuration of a probe unit 1020 according to this embodiment. Figure 65 shows a cross-section taken along line XXXXXXV-XXXXXXV in Figure 64. Figure 66 is a schematic cross-sectional view showing the state in which a height adjustment member 50 arranged on a probe unit 1020 according to this embodiment is in contact with a stage 70.

The probe unit 1020 in this embodiment has a first elastic mechanism 1035 and a second elastic mechanism 1045 fixed to the probe fixing member 24.

The first elastic mechanism 1035 has a first elastic member 1037 fixed to the probe fixing member 24, and a first housing 1036 that houses the first elastic member 1037 and is fixed to the probe fixing member 24. In this embodiment, the first elastic member 1037 is fixed to the probe fixing member 24 via the first housing 1036. The first elastic member 1037 is freely expandable and contractable in a direction that includes a vertical component. The first elastic member 1037 may be, for example, a helical spring.

In this embodiment, the first probe 30 is fixed to the probe fixing member 24 via the first elastic member 1037.

The second elastic mechanism 1045 has a second elastic member 1047 fixed to the probe fixing member 24, and a second housing 1046 that houses the second elastic member 1047 and is fixed to the probe fixing member 24. In this embodiment, the second elastic member 1047 is fixed to the probe fixing member 24 via the second housing 1046. The second elastic member 1047 is freely expandable in a direction that includes a vertical component. The second elastic member 1047 may be, for example, a helical spring.

In this embodiment, the second probe 40 is fixed to the probe fixing member 24 via the second elastic member 1047.

In such a configuration, by making the spring constant of the first elastic member 1037 smaller than the spring constant of the first probe 30, the semiconductor laser device 80 to be inspected can be held down mainly by the elastic restoring force of the first elastic member 1037, as shown in Fig. 66. Also, by making the spring constant of the second elastic member 1047 smaller than the spring constant of the second probe 40, the semiconductor laser device 80 to be inspected can be held down mainly by the elastic restoring force of the second elastic member 1047, as shown in Fig. 66.

Therefore, since it is not necessary to buckle each probe, the linearity of the elastic restoring force with respect to the amount of displacement of the lower end of each probe can be improved. In other words, it becomes easier to control the magnitude of the elastic restoring force.

In this embodiment, the first elastic member 1037 and the second elastic member 1047 are stretchable in a direction including a vertical component, and the distance between the position of the upper end 32 and the position of the lower end 31 of the first probe 30 and the distance between the position of the upper end 42 and the position of the lower end 41 of the second probe 40 in a top view (distance Dp shown in FIG. 65) are greater than 0. As a result, even when, for example, the test object is minute and it is necessary to bring the lower end 31 of the first probe 30 and the lower end 41 of the second probe 40 close to each other, it is possible to make the distance between the upper end 32 of the first probe 30 and the upper end 42 of the second probe 40 greater than the distance between the lower end 31 of the first probe 30 and the lower end 41 of the second probe 40. Therefore, it is possible to attach an elastic mechanism larger than the distance between the tips of each probe to the upper end of each probe.

In this embodiment, as shown in FIG. 65, the vicinity of the upper end of each probe is inclined by an angle θs with respect to the vertical direction. This increases the distance between the upper end 32 of the first probe 30 and the upper end 42 of the second probe 40. In addition, in accordance with this, the first elastic member 1037 and the second elastic member 1047 may expand and contract in a direction inclined with respect to the vertical direction. This makes it possible to increase the distance between the first elastic member 1037 and the second elastic member 1047, so that an elastic mechanism larger than the distance between the tips of each probe can be attached to the upper end of each probe.

(Variations, etc.)
Although the probe unit and the like according to the present disclosure have been described above based on the respective embodiments, the present disclosure is not limited to the above-described respective embodiments.

For example, in the above embodiment 1, the first probe and the second probe exhibited the buckling phenomenon, but only one of the first probe and the second probe may exhibit the buckling phenomenon.

This disclosure also includes forms obtained by applying various modifications to each of the above embodiments that may occur to a person skilled in the art, and forms realized by arbitrarily combining the components and functions of each of the above embodiments without departing from the spirit of this disclosure.

The probe units disclosed herein are particularly effective in inspecting semiconductor laser devices, where even the slightest damage can be problematic.

REFERENCE SIGNS LIST 1, 1a Inspection system 5, 5a Transport device 10 Inspection device 11 Base 12 Support 13, 15, 17 Slide rail 14 Up-down moving member 16 Unit moving member 18 Connection spring 19 Unit support member 20, 720, 720a, 820, 820a, 920, 1020 Probe unit 21, 521, 621 Unit body 21s Penetrating member inclined surface 21u, 521u, 621u Opposing surface 21v Cavity 23, 123, 223, 423, 523, 623 Probe penetrating member 24, 524, 624 Probe fixing member 26a, 126a, 226a, 426a, 526a, 626a First through hole 26b, 526b, 626b Second through hole 27a, 527a, 627a First fixing hole 27b, 527b, 627b Second fixing hole 28 Adhesive 30, 130, 130a, 230, 330, 430, 830 First probe 31, 41, 131, 141, 331, 341, 831, 841 Lower end 32, 42, 832, 842 Upper end 34, 834 First deflection portion 36, 46 Electric conductor 38, 48, 338 Insulating film 40, 140, 240, 340, 840 Second probe 50, 150 Height adjustment member 50a Stage contact surface 50b, 150b Unit contact surface 70 Stage 70a Mounting surface 70s Stage inclined surface 72 Suction hole 80 Semiconductor laser device 82 Element 82a Element upper surface 82b Element lower surface 82e Light emitting point 83 Second electrode 84 Submount 84a Upper surface 84b Lower surface 85 First electrode 90 Measuring device 92 Light receiving section 123a, 123c, 123e, 223a, 223c Guide member 123b, 123d, 223b Spacer 126aa, 126ca, 126ea, 226aa, 226ca First guide hole 126ba, 126da, 226ba First spacer hole 156 Positioning section 426P First convex portion 426w First inner wall 521t, 621t Upper surface 523a, 623a First upper surface 523b, 623b Second upper surface 524a, 624a First lower surface 524b, 624b Second lower surface 830A, 840A Shaft 1035 First elastic mechanism 1036 First housing 1037 First elastic member 1045 Second elastic mechanism 1046 Second housing 1047 Second elastic member Fm Frame LB Laser light Pm Push rod

Claims (39)

A probe unit including a part of a current circuit for supplying a current to an object to be tested,
a first probe and a second probe included in the current circuit and having an elastic restoring force;
a probe fixing member to which the first probe and the second probe are fixed;
a probe penetrating member disposed below the probe fixing member and spaced apart from the probe fixing member, the probe penetrating member having a first through hole and a second through hole through which the first probe and the second probe pass , respectively;
a first elastic member and a second elastic member fixed to the probe fixing member ,
the probe-penetrating member has an opposing surface through which the first probe and the second probe penetrate and which faces the test object;
a portion of the first probe and a portion of the second probe protruding downward from the opposing surface are movable in a vertical direction relative to the probe fixing member;
a lower end of the first probe is located lower than a lower end of the second probe when the first probe and the second probe are not in contact with the test object;
the first probe is fixed to the probe fixing member via the first elastic member,
the second probe is fixed to the probe fixing member via the second elastic member,
The first elastic member and the second elastic member are stretchable in a direction including a vertical component,
At least one of a distance between an upper end position and a lower end position of the first probe and a distance between an upper end position and a lower end position of the second probe in a top view is greater than 0;
A distance between an upper end of the first probe and an upper end of the second probe in a top view is greater than a distance between a lower end of the first probe and a lower end of the second probe.
Probe unit. The probe unit according to claim 1 , wherein at least one of the first elastic member and the second elastic member expands and contracts in a direction inclined with respect to the up-down direction. A probe unit including a part of a current circuit for supplying a current to an object to be tested,
a first probe and a second probe included in the current circuit and having an elastic restoring force;
a probe fixing member to which the first probe and the second probe are fixed;
a probe penetrating member disposed below the probe fixing member and spaced apart from the probe fixing member, the probe penetrating member having a first through hole and a second through hole through which the first probe and the second probe pass, respectively;
the probe-penetrating member has an opposing surface through which the first probe and the second probe penetrate and which faces the test object;
a portion of the first probe and a portion of the second probe protruding downward from the opposing surface are movable in a vertical direction relative to the probe fixing member;
a lower end of the first probe is located lower than a lower end of the second probe when the first probe and the second probe are not in contact with the test object;
At least one of the first probe and the second probe exhibits a buckling phenomenon;
the first probe has a first deflection portion deflected in a first deflection direction from a lower end of the first probe in a top view,
the second probe has a second deflection portion deflected in a second deflection direction from a lower end of the second probe in a top view,
the first deflection portion includes an upper end of the first probe and is inclined with respect to a vertical direction;
the second deflection portion includes an upper end of the second probe and is inclined with respect to a vertical direction;
The probe unit includes at least one of a plurality of the first probes electrically connected in parallel to each other and tilted in the first deflection direction, and a plurality of the second probes electrically connected in parallel to each other and tilted in the second deflection direction.
Probe unit. the first deflection orientation and the second deflection orientation are non-parallel to an arrangement direction of the first probe and the second probe;
The probe unit according to claim 3 , wherein the first deflection direction is opposite to the second deflection direction. A probe unit including a part of a current circuit for supplying a current to an object to be tested,
a first probe and a second probe included in the current circuit and having an elastic restoring force;
a probe fixing member to which the first probe and the second probe are fixed;
a probe penetrating member disposed below the probe fixing member and spaced apart from the probe fixing member, the probe penetrating member having a first through hole and a second through hole through which the first probe and the second probe pass, respectively;
the probe-penetrating member has an opposing surface through which the first probe and the second probe penetrate and which faces the test object;
a portion of the first probe and a portion of the second probe protruding downward from the opposing surface are movable in a vertical direction relative to the probe fixing member;
a lower end of the first probe is located lower than a lower end of the second probe when the first probe and the second probe are not in contact with the test object;
The spring constant of the second probe is smaller than the spring constant of the first probe.
Probe unit. The elastic modulus of the first probe and the second probe is the same;
The probe unit according to claim 5 , wherein the second probe is thinner than the first probe, or a length from the probe fixing member to the probe penetrating member of the second probe is longer than a length from the probe fixing member to the probe penetrating member of the first probe. A probe unit including a part of a current circuit for supplying a current to an object to be tested,
a first probe and a second probe included in the current circuit and having an elastic restoring force;
a probe fixing member to which the first probe and the second probe are fixed;
a probe penetrating member disposed below the probe fixing member and spaced apart from the probe fixing member, the probe penetrating member having a first through hole and a second through hole through which the first probe and the second probe pass, respectively;
the probe-penetrating member has an opposing surface through which the first probe and the second probe penetrate and which faces the test object;
a portion of the first probe and a portion of the second probe protruding downward from the opposing surface are movable in a vertical direction relative to the probe fixing member;
a lower end of the first probe is located lower than a lower end of the second probe when the first probe and the second probe are not in contact with the test object;
The radius of curvature of the lower end of the second probe is greater than the radius of curvature of the lower end of the first probe.
Probe unit. The probe unit according to claim 1 or 4 , comprising at least one of a plurality of the first probes and a plurality of the second probes. The probe-penetrating member has a plurality of guide members arranged spaced apart from each other in the vertical direction,
The probe unit according to claim 1 or 4 , wherein each of the plurality of guide members has a first guide hole through which the first probe passes. A probe unit including a part of a current circuit for supplying a current to an object to be tested,
a first probe and a second probe included in the current circuit and having an elastic restoring force;
a probe fixing member to which the first probe and the second probe are fixed;
a probe penetrating member disposed below the probe fixing member and spaced apart from the probe fixing member, the probe penetrating member having a first through hole and a second through hole through which the first probe and the second probe pass, respectively;
the probe-penetrating member has an opposing surface through which the first probe and the second probe penetrate and which faces the test object;
a portion of the first probe and a portion of the second probe protruding downward from the opposing surface are movable in a vertical direction relative to the probe fixing member;
a lower end of the first probe is located lower than a lower end of the second probe when the first probe and the second probe are not in contact with the test object;
The probe-penetrating member has a plurality of guide members arranged spaced apart from each other in the vertical direction,
Each of the plurality of guide members has a first guide hole through which the first probe passes,
A gap between the first guide hole and the first probe of a guide member among the plurality of guide members that is closest to the probe fixing member is larger than a gap between the first guide hole and the first probe of a guide member among the plurality of guide members that is farthest from the probe fixing member.
Probe unit. A probe unit including a part of a current circuit for supplying a current to an object to be tested,
a first probe and a second probe included in the current circuit and having an elastic restoring force;
a probe fixing member to which the first probe and the second probe are fixed;
a probe penetrating member disposed below the probe fixing member and spaced apart from the probe fixing member, the probe penetrating member having a first through hole and a second through hole through which the first probe and the second probe pass, respectively;
the probe-penetrating member has an opposing surface through which the first probe and the second probe penetrate and which faces the test object;
a portion of the first probe and a portion of the second probe protruding downward from the opposing surface are movable in a vertical direction relative to the probe fixing member;
a lower end of the first probe is located lower than a lower end of the second probe when the first probe and the second probe are not in contact with the test object;
The probe-penetrating member has a plurality of guide members arranged spaced apart from each other in the vertical direction,
Each of the plurality of guide members has a first guide hole through which the first probe passes,
The thickness of the guide member closest to the probe fixing member among the plurality of guide members is greater than the thickness of the guide member farthest from the probe fixing member among the plurality of guide members.
Probe unit. A probe unit including a part of a current circuit for supplying a current to an object to be tested,
a first probe and a second probe included in the current circuit and having an elastic restoring force;
a probe fixing member to which the first probe and the second probe are fixed;
a probe penetrating member disposed below the probe fixing member and spaced apart from the probe fixing member, the probe penetrating member having a first through hole and a second through hole through which the first probe and the second probe pass, respectively;
the probe-penetrating member has an opposing surface through which the first probe and the second probe penetrate and which faces the test object;
a portion of the first probe and a portion of the second probe protruding downward from the opposing surface are movable in a vertical direction relative to the probe fixing member;
a lower end of the first probe is located lower than a lower end of the second probe when the first probe and the second probe are not in contact with the test object;
The probe-penetrating member has a first inner wall surrounding the first through hole, and in a top view of the probe-penetrating member, the first inner wall has one or more first protrusions smoothly protruding toward the first through hole.
Probe unit. A probe unit including a part of a current circuit for supplying a current to an object to be tested,
a first probe and a second probe included in the current circuit and having an elastic restoring force;
a probe fixing member to which the first probe and the second probe are fixed;
a probe penetrating member disposed below the probe fixing member and spaced apart from the probe fixing member, the probe penetrating member having a first through hole and a second through hole through which the first probe and the second probe pass, respectively;
the probe-penetrating member has an opposing surface through which the first probe and the second probe penetrate and which faces the test object;
a portion of the first probe and a portion of the second probe protruding downward from the opposing surface are movable in a vertical direction relative to the probe fixing member;
a lower end of the first probe is located lower than a lower end of the second probe when the first probe and the second probe are not in contact with the test object;
The opposing surface of the probe-penetrating member has a penetrating member inclined surface that is inclined with respect to the up-down direction,
The inclined surface of the penetrating member rises as it moves away from the first through hole and the second through hole.
Probe unit. The probe unit according to claim 13 , wherein the inclined surface of the penetrating member is a light reflection suppressing surface. a first elastic member and a second elastic member fixed to the probe fixing member,
the first probe is fixed to the probe fixing member via the first elastic member,
The probe unit according to any one of claims 5 to 14 , wherein the second probe is fixed to the probe fixing member via the second elastic member. The probe unit according to any one of claims 5 to 14 , wherein at least one of the first probe and the second probe exhibits a buckling phenomenon. the first probe has a first deflection portion deflected in a first deflection direction from a lower end of the first probe in a top view,
the second probe has a second deflection portion deflected in a second deflection direction from a lower end of the second probe in a top view,
the first deflection portion includes an upper end of the first probe and is inclined with respect to a vertical direction;
The probe unit according to claim 16 , wherein the second deflection portion includes an upper end of the second probe and is inclined with respect to the up-down direction. the first probe has a first deflection portion deflected in a first deflection direction from a lower end of the first probe in a top view,
the second probe has a second deflection portion deflected in a second deflection direction from a lower end of the second probe in a top view,
15. The probe unit according to claim 5, wherein at least one of a distance between an upper end position and a lower end position of the first probe and a distance between an upper end position and a lower end position of the second probe is zero when viewed from above . a probe unit including a part of a current circuit for supplying a current to an object to be inspected ;
a stage having a mounting surface on which the inspection object is placed;
a height adjustment member disposed between the probe unit and the stage,
The probe unit comprises:
a first probe and a second probe included in the current circuit and having an elastic restoring force;
a probe fixing member to which the first probe and the second probe are fixed;
a probe penetrating member disposed below the probe fixing member and spaced apart from the probe fixing member, the probe penetrating member having a first through hole and a second through hole through which the first probe and the second probe pass, respectively;
the probe-penetrating member has an opposing surface through which the first probe and the second probe penetrate and which faces the test object;
a portion of the first probe and a portion of the second probe protruding downward from the opposing surface are movable in a vertical direction relative to the probe fixing member;
a lower end of the first probe is located lower than a lower end of the second probe when the first probe and the second probe are not in contact with the test object;
the height adjustment member is disposed on the opposing surface of the probe unit ,
The stage contact surface of the height adjustment member that comes into contact with the stage is a rough surface.
Inspection equipment. a probe unit including a part of a current circuit for supplying a current to an object to be inspected ;
a stage on which the inspection object is placed; and
a height adjustment member disposed between the probe unit and the stage,
The probe unit comprises:
a first probe and a second probe included in the current circuit and having an elastic restoring force;
a probe fixing member to which the first probe and the second probe are fixed;
a probe penetrating member disposed below the probe fixing member and spaced apart from the probe fixing member, the probe penetrating member having a first through hole and a second through hole through which the first probe and the second probe pass, respectively;
the probe-penetrating member has an opposing surface through which the first probe and the second probe penetrate and which faces the test object;
a portion of the first probe and a portion of the second probe protruding downward from the opposing surface are movable in a vertical direction relative to the probe fixing member;
a lower end of the first probe is located lower than a lower end of the second probe when the first probe and the second probe are not in contact with the test object;
the height adjustment member is disposed on a mounting surface of the stage ,
At least one of a unit contact surface of the height adjustment member that comes into contact with the probe unit and an opposing surface of the probe unit that faces the adjustment member is a rough surface.
Inspection equipment. a probe unit including a part of a current circuit for supplying a current to an object to be inspected ;
a stage having a mounting surface on which the inspection object is placed;
a height adjustment member disposed between the probe unit and the stage;
a unit support member for supporting the probe unit;
a unit moving member that moves the unit support member;
The unit support member is connected to the unit moving member so as to be slidable in the up and down direction.
The slide rails that connect the
a connection spring that connects the probe unit and the unit moving member ,
The probe unit comprises:
a first probe and a second probe included in the current circuit and having an elastic restoring force;
a probe fixing member to which the first probe and the second probe are fixed;
a probe penetrating member disposed below the probe fixing member and spaced apart from the probe fixing member, the probe penetrating member having a first through hole and a second through hole through which the first probe and the second probe pass, respectively;
the probe-penetrating member has an opposing surface through which the first probe and the second probe penetrate and which faces the test object;
a portion of the first probe and a portion of the second probe protruding downward from the opposing surface are movable in a vertical direction relative to the probe fixing member;
a lower end of the first probe is located lower than a lower end of the second probe when the first probe and the second probe are not in contact with the test object;
the height adjustment member is disposed on the opposing surface of the probe unit. a probe unit including a part of a current circuit for supplying a current to an object to be inspected ;
a stage having a mounting surface on which the inspection object is placed;
a height adjustment member disposed between the probe unit and the stage,
The probe unit comprises:
a first probe and a second probe included in the current circuit and having an elastic restoring force;
a probe fixing member to which the first probe and the second probe are fixed;
a probe penetrating member disposed below the probe fixing member and spaced apart from the probe fixing member, the probe penetrating member having a first through hole and a second through hole through which the first probe and the second probe pass, respectively;
the probe-penetrating member has an opposing surface through which the first probe and the second probe penetrate and which faces the test object;
a portion of the first probe and a portion of the second probe protruding downward from the opposing surface are movable in a vertical direction relative to the probe fixing member;
a lower end of the first probe is located lower than a lower end of the second probe when the first probe and the second probe are not in contact with the test object;
the height adjustment member is disposed on the opposing surface of the probe unit ,
the mounting surface has a stage inclined surface that is inclined with respect to the up-down direction,
The stage inclined surface descends as it approaches the end of the placement surface.
Inspection equipment. The inspection device according to claim 22 , wherein the stage inclined surface is a light reflection suppressing surface. An inspection device;
a transport device that transports the inspection device,
The inspection device includes:
a probe unit including a part of a current circuit for supplying a current to an object to be inspected;
a stage having a mounting surface on which the inspection object is placed;
a height adjustment member disposed between the probe unit and the stage,
The probe unit comprises:
a first probe and a second probe included in the current circuit and having an elastic restoring force;
a probe fixing member to which the first probe and the second probe are fixed;
a probe penetrating member disposed below the probe fixing member and spaced apart from the probe fixing member, the probe penetrating member having a first through hole and a second through hole through which the first probe and the second probe pass, respectively;
the probe-penetrating member has an opposing surface through which the first probe and the second probe penetrate and which faces the test object;
a portion of the first probe and a portion of the second probe protruding downward from the opposing surface are movable in a vertical direction relative to the probe fixing member;
a lower end of the first probe is located lower than a lower end of the second probe when the first probe and the second probe are not in contact with the test object;
the height adjustment member is disposed on the opposing surface of the probe unit,
an inspection system which transports the inspection device in a state in which the first probe and the second probe are in contact with the inspection object. the first probe has a first deflection portion deflected in a first deflection direction from a lower end of the first probe in a top view,
the second probe has a second deflection portion deflected in a second deflection direction from a lower end of the second probe in a top view,
The inspection system of claim 24 , wherein the first and second offset orientations are parallel to a transport direction of the inspection device. the first probe has a first deflection portion deflected in a first deflection direction from a lower end of the first probe in a top view,
the second probe has a second deflection portion deflected in a second deflection direction from a lower end of the second probe in a top view,
The inspection system according to claim 24 , wherein the first deflection direction and the second deflection direction are parallel to a maximum acceleration direction during transportation of the inspection device. The inspection system according to claim 24 , wherein the inspection device includes a movement mechanism that moves the probe unit in a direction perpendicular to a transport direction of the inspection device. the first probe has a first deflection portion deflected in a first deflection direction from a lower end of the first probe in a top view,
the second probe has a second deflection portion deflected in a second deflection direction from a lower end of the second probe in a top view,
The inspection system of claim 24 , wherein the first deflection orientation and the second deflection orientation are parallel to a movement direction of the probe unit. the stage has a suction hole for suctioning the inspection object,
the inspection device includes a frame that surrounds the inspection object that is adsorbed to the stage,
The inspection system according to claim 24 , wherein the inspection device adjusts a position of the inspection target by moving the frame. the test object has a first electrode with which a bottom end of the first probe contacts and a second electrode with which a bottom end of the second probe contacts;
the first electrode is located below the second electrode,
The inspection system according to claim 24 , wherein a difference in vertical position between a lower end of the first probe and a lower end of the second probe is larger than a difference in vertical position between the first electrode and the second electrode. the inspection object includes an edge-emitting semiconductor laser element,
The opposing surface of the probe-penetrating member has a penetrating member inclined surface that is inclined with respect to the up-down direction,
The inspection system of claim 24 , wherein the inclined surface of the penetrating member rises as it moves away from the first through hole and the second through hole. The inspection system of claim 31 , wherein the penetrating member inclined surface is a light reflection reducing surface. the inspection object includes an edge-emitting semiconductor laser element,
the mounting surface has a stage inclined surface that is inclined with respect to the up-down direction,
The inspection system according to claim 24 , wherein the stage inclined surface descends as it approaches an end of the placement surface. The inspection system of claim 33 , wherein the stage tilt surface is a light reflection reducing surface. 1. A method for inspecting a characteristic of an object to be inspected by supplying a current to the object to be inspected, comprising:
The test subject is
a submount having a top surface;
an element having an element upper surface, the element being disposed on the upper surface of the submount and supplied with the current;
the submount has a first electrode disposed on the upper surface;
the element has a second electrode disposed on a top surface of the element;
The inspection method includes:
a first contacting step of contacting a first probe with the first electrode;
a second contacting step of contacting a second probe with the second electrode in a state in which the first probe is in contact with the first electrode after the first contacting step,
The first probe and the second probe are included in a current circuit that supplies the current to the test object, and have an elastic restoring force. 1. A method for inspecting a characteristic of an object to be inspected by supplying a current to the object to be inspected, comprising:
The test subject is
a submount having a top surface;
an element having an element upper surface, the element being disposed on the upper surface of the submount and supplied with the current;
the submount has a first electrode disposed on the upper surface;
the element has a second electrode disposed on a top surface of the element;
The inspection method includes:
a supplying step of supplying the current to the test object in a state in which a first probe is in contact with the first electrode and a second probe is in contact with the second electrode;
a second detachment step of separating the second probe from the second electrode after the supply step;
a first detachment step of separating the first probe from the first electrode after the second detachment step,
The first probe and the second probe are included in a current circuit that supplies the current to the test object, and have an elastic restoring force. 1. An inspection method for inspecting characteristics of an object to be inspected by supplying a current to the object to be inspected using an inspection device including a probe unit including a part of a current circuit for supplying a current to the object to be inspected, a stage on which the object to be inspected is placed, and a height adjustment member placed between the probe unit and the stage, comprising:
The probe unit comprises:
a first probe and a second probe included in the current circuit and having an elastic restoring force;
a probe fixing member to which the first probe and the second probe are fixed;
a probe penetrating member disposed below the probe fixing member and spaced apart from the probe fixing member, the probe penetrating member having a first through hole and a second through hole through which the first probe and the second probe pass, respectively;
the probe-penetrating member has an opposing surface through which the first probe and the second probe penetrate and which faces the test object;
a portion of the first probe and a portion of the second probe protruding downward from the opposing surface are movable in a vertical direction relative to the probe fixing member;
a lower end of the first probe is located lower than a lower end of the second probe when the first probe and the second probe are not in contact with the test object;
the height adjustment member is disposed on a mounting surface of the stage,
The test subject is
a submount having a top surface;
an element having an element upper surface, the element being disposed on the upper surface of the submount and supplied with the current;
the submount has a first electrode disposed on the upper surface;
the element has a second electrode disposed on a top surface of the element;
The inspection method includes:
a first contacting step of contacting the first probe with the first electrode;
a second contacting step of contacting the second probe with the second electrode while keeping the first probe in contact with the first electrode after the first contacting step. 1. An inspection method for inspecting characteristics of an object to be inspected by supplying a current to the object to be inspected using an inspection device including a probe unit including a part of a current circuit for supplying a current to the object to be inspected, a stage on which the object to be inspected is placed, and a height adjustment member placed between the probe unit and the stage, comprising:
The probe unit comprises:
a first probe and a second probe included in the current circuit and having an elastic restoring force;
a probe fixing member to which the first probe and the second probe are fixed;
a probe penetrating member disposed below the probe fixing member and spaced apart from the probe fixing member, the probe penetrating member having a first through hole and a second through hole through which the first probe and the second probe pass, respectively;
the probe-penetrating member has an opposing surface through which the first probe and the second probe penetrate and which faces the test object;
a portion of the first probe and a portion of the second probe protruding downward from the opposing surface are movable in a vertical direction relative to the probe fixing member;
a lower end of the first probe is located lower than a lower end of the second probe when the first probe and the second probe are not in contact with the test object;
the height adjustment member is disposed on a mounting surface of the stage,
The test subject is
a submount having a top surface;
an element having an element upper surface, the element being disposed on the upper surface of the submount and supplied with the current;
the submount has a first electrode disposed on the upper surface;
the element has a second electrode disposed on a top surface of the element;
The inspection method includes:
a supplying step of supplying the current to the test object in a state in which the first probe is in contact with the first electrode and the second probe is in contact with the second electrode;
a second detachment step of separating the second probe from the second electrode after the supply step;
a first detachment step of detaching the first probe from the first electrode after the second detachment step. A method for manufacturing a semiconductor laser device, comprising the steps of:
an assembly process for assembling the semiconductor laser device;
an inspection step of inspecting the semiconductor laser device as the inspection object by using the inspection method according to claim 35 or 36 ,
The element is a semiconductor laser element.

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