JP7561599B2 - Resin composition - Google Patents

Description

This disclosure relates to a resin composition, and in particular to a resin composition for use as a resist for ultraviolet laser processing.

Dicing is used to separate semiconductor wafers into individual devices. Dicing is typically performed by scribing or sawing. In recent years, plasma dicing, which uses plasma to etch specific parts of the wafer, has been attracting attention.

During plasma dicing, a mask made of a resist film is formed on the wafer, and the parts of the wafer exposed through the mask are then plasma etched to separate them into individual devices. The mask must be able to accurately form the pattern for etching, and also be able to protect the elements on the wafer from the plasma.

The mask can be formed by patterning a photoresist film using standard lithography operations. However, this method poses a problem in terms of the cost of mask formation. It has also been considered to form a mask by directly patterning a resist film made of polyvinyl alcohol (PVA) instead of a photoresist film using an ultraviolet (UV) laser (see, for example, Patent Document 1).

JP 2010-165963 A

Conventional resist films made of PVA and the like have poor heat resistance and low UV laser absorption, which means that it is not possible to increase the processing speed and it is difficult to perform high-precision processing. Adding an ultraviolet absorber to the resist film has also been considered, but increasing the amount added causes the ultraviolet absorber to precipitate, making it impossible to sufficiently improve the UV laser absorption. Furthermore, adding an ultraviolet absorber does not solve the problem of the resist film's low heat resistance.

Furthermore, to protect the elements on the wafer from plasma, the resist film needs to be sufficiently thick, but with conventional resist films made of PVA, increasing the thickness of the film further reduces processability, making it difficult to make the film sufficiently thick.

The present disclosure aims to realize an ultraviolet laser processing resist that can be processed at high speed and with high precision.

One aspect of the resin composition for ultraviolet laser processing resist of the present disclosure contains a first polymer and a second polymer, the first polymer having a first block having a polysilane skeleton and a second block which is a copolymer of a vinyl monomer and contains an ultraviolet absorbing monomer unit derived from an ultraviolet absorbing monomer having ultraviolet absorbing properties, the second polymer is a copolymer of an acrylate monomer or a methacrylate monomer and has a first monomer unit derived from a first monomer having ultraviolet absorbing properties and a second monomer unit derived from a second monomer not having ultraviolet absorbing properties, and the second polymer is 3 parts by mass or more and 50 parts by mass or less per 100 parts by mass of the first polymer.

In one embodiment of the resin composition for ultraviolet laser processing resist, the ultraviolet absorbing monomer and the first monomer have an ultraviolet absorbing group, and the ultraviolet absorbing group in the ultraviolet absorbing monomer and the ultraviolet absorbing group in the first monomer are the same and can be any one of a benzotriazole skeleton, a benzophenone skeleton, and a triazine skeleton.

In one embodiment of the resin composition for ultraviolet laser processing resist, the proportion of the first monomer unit in the second polymer can be 40% by mass or more and 80% by mass or less.

In one embodiment of the resin composition for ultraviolet laser processing resist, the proportion of the ultraviolet absorbing monomer units in the first polymer can be 3% by mass or more and 70% by mass or less, and the proportion of the polysilane skeleton in the first polymer can be 30% by mass or more and 97% by mass or less.

In one embodiment of the resin composition for ultraviolet laser processing resist, the ultraviolet transmittance at a wavelength of 355 nm can be 2% or less.

One embodiment of the resist material of the present disclosure contains the resin composition of the present disclosure and a solvent.

The resin composition disclosed herein makes it possible to realize an ultraviolet laser processing resist that can be processed at high speed and with high precision.

The resist agent of this embodiment contains a resin composition (resist polymer) and a solvent. The resist agent of this embodiment can be directly patterned by an ultraviolet (UV) laser, and can be used, for example, to form a mask for plasma dicing. The resist polymer contained in the resist agent of this embodiment contains a first polymer and a second polymer.

The first polymer is a copolymer including a first block having a polysilane skeleton and a second block made of a polymer of a vinyl monomer.

The first block is made of polysilane, has a main chain formed by silicon-silicon bonds, and has an organic substituent on the side chain. The main chain formed by silicon-silicon bonds may be linear or branched, or may have a ring structure. The organic substituent on the side chain is not particularly limited, and can be preferably an alkyl group, an aryl group, an aralkyl group, or the like. The alkyl group may be linear or branched, or may have a ring structure. It may also be an organic substituent containing a heteroatom. The molecular weight of the polysilane, which is the first block, is not particularly limited, but from the viewpoint of handleability as a resist agent, the number average molecular weight (Mn) is preferably 500 or more, more preferably 800 or more, and preferably 3000 or less, more preferably 2500 or less. The weight average molecular weight (Mw) is preferably 800 or more, more preferably 1000 or more, and preferably 4000 or less, more preferably 3000 or less.

The second block is made of a polymer of a vinyl monomer, and at least a part of the monomer units constituting the second block is an ultraviolet absorbing monomer unit derived from an ultraviolet absorbing monomer having an ultraviolet absorbing group. Therefore, the second block has an ultraviolet absorbing effect. The ultraviolet absorbing group is not particularly limited, but can be, for example, a benzotriazole skeleton, a benzophenone skeleton, or a triazine skeleton. The ultraviolet absorbing monomer only needs to have a vinyl group and an ultraviolet absorbing group, but from the viewpoint of polymerization, etc., an acrylic monomer that is a derivative of an acrylic acid ester (acrylate) or a derivative of a methacrylic acid ester (methacrylate) is preferable. Specifically, as the ultraviolet absorbing monomer, 3-(2H-benzotriazol-2-yl)-4-hydroxyphenethyl=methacrylate, 2-(4-benzoyl-3-hydroxyphenoxy)ethyl acrylate, or 2-[4-(4,6-diphenyl)-[1,3,5]triazin-2-yl]-3-hydroxy-phenoxy}-ethylprop-2-enoate, etc. can be used. In the following, acrylate or methacrylate will be referred to as (meth)acrylate.

The first polymer, which includes a first block having a polysilane skeleton and a second block having ultraviolet absorbing properties, can be prepared by mixing and reacting polysilane with an ultraviolet absorbing monomer. Radicals can be generated in the polysilane by irradiation with ultraviolet light, etc., so that the ultraviolet absorbing monomer can be copolymerized with the polysilane.

The proportion of the first block having a polysilane skeleton in the entire first polymer is preferably 30% by mass or more, more preferably 40% by mass or more, and even more preferably 60% by mass or more, from the viewpoint of heat resistance. Also, from the viewpoint of exerting an ultraviolet absorbing effect, it is preferably 97% by mass or less, more preferably 90% by mass or less, and even more preferably 85% by mass or less.

The proportion of monomer units derived from ultraviolet absorbing monomers in the entire first polymer is preferably 3% by mass or more, more preferably 5% by mass or more, even more preferably 10% by mass or more, and even more preferably 15% by mass or more, from the viewpoint of exerting an ultraviolet absorbing effect. Also, from the viewpoint of heat resistance, it is preferably 70% by mass or less, more preferably 60% by mass or less, and even more preferably 40% by mass or less.

The first polymer may contain monomer units derived from a non-UV absorbing monomer that does not have a UV absorbing group such as a benzotriazole skeleton and does not exhibit UV absorbing properties. The non-UV absorbing monomer is not particularly limited, but may be an acrylic monomer such as a (meth)acrylic acid ester or a (meth)acrylamide derivative. By adding a (meth)acrylic acid alkyl ester having an alkyl group with 4 or more carbon atoms, the resist film can be made flexible, improving adhesion to the wafer and further improving processability. In addition, by adding a hydrocarbon monomer that has a higher plasma etching resistance than polysilane, the plasma resistance of the resist film can be improved.

The non-UV absorbing monomer can be copolymerized with the polysilane together with the UV absorbing monomer to form a constituent unit of the second block. It may also be included in the first polymer as a constituent unit of a block different from the second block.

The proportion of monomer units derived from non-UV absorbing monomers in the entire first polymer is preferably 15% by mass or less, and more preferably 10% by mass or less.

The second polymer is a polymer of a vinyl monomer that is compatible with the first polymer and has an ultraviolet absorbing effect. In this embodiment, the second polymer is a copolymer containing a first monomer unit derived from a first monomer that has an ultraviolet absorbing effect and a second monomer unit derived from a second monomer that does not have an ultraviolet absorbing effect. From the viewpoint of compatibility with the first polymer, the first monomer and the second monomer are preferably acrylic monomers that are (meth)acrylates.

From the viewpoint of compatibility with the first polymer, it is preferable that the first monomer has the same ultraviolet absorbing group as the ultraviolet absorbing monomer used in the polymerization of the first polymer. The same monomer as the ultraviolet absorbing monomer can be used as the first monomer.

The second monomer is preferably a (meth)acrylate monomer that copolymerizes with the first monomer that does not have an ultraviolet absorbing group. Specifically, methyl methacrylate or the like can be used as the second monomer. The second monomer is not limited to one type, and two or more types of monomers may be mixed.

The first monomer and the second monomer may be copolymerized in an alternating manner, a random manner, or a block manner.

The proportion of the first monomer unit in the second polymer can be within a range that can impart ultraviolet absorbency to the second polymer, but is preferably 40% by mass or more, more preferably 50% by mass or more, preferably 80% by mass or less, more preferably 70% by mass or less.

The weight average molecular weight (Mw) of the second polymer is not particularly limited, but from the viewpoint of compatibility with the first polymer, it is preferably 20,000 or more, more preferably 30,000 or more, and preferably 80,000 or less, more preferably 60,000 or less.

The ratio of each block and each monomer unit in the first polymer and the second polymer is based on the amount charged when the polymer is polymerized, but can also be determined by composition analysis of the polymer.

The ratio of the second polymer to 100 parts by mass of the first polymer in the resist polymer of this embodiment is preferably 3 parts by mass or more, more preferably 5 parts by mass or more, even more preferably 10 parts by mass or more, preferably 50 parts by mass or less, and more preferably 45 parts by mass or less, from the viewpoint of improving the processing speed and processing accuracy.

The resist polymer of this embodiment has excellent ultraviolet absorption properties because it contains a first polymer having an ultraviolet absorbing function and a second polymer having an ultraviolet absorbing function. In addition, since the compatibility between the first polymer and the second polymer is high, bleeding of the ultraviolet absorber, which occurs when a low-molecular-weight ultraviolet absorber is added, does not occur. Furthermore, since the first polymer contains a first block having a polysilane skeleton, it has excellent heat resistance and plasma resistance. Therefore, the resist film using the resist polymer of this embodiment can be patterned at high speed and with high precision using a UV laser. The resist film using the resist polymer of this embodiment can be laser processed at a processing speed faster than 600 mm/s, and can be processed well even at 700 mm/s or 800 mm/s, and shows sufficient processability up to about 1000 mm/s. It is also possible to laser process at a processing speed of 600 mm/s or less.

The resist agent of this embodiment can be prepared by dissolving the first polymer and the second polymer in a solvent. It can also be prepared by mixing a solution in which the first polymer is dissolved and a solution in which the second polymer is dissolved.

The solvent is not particularly limited as long as it can dissolve the resist polymer, but may be, for example, toluene, tetrahydrofuran, methyl ethyl ketone, propylene glycol monomethyl ether acetate, cyclohexanone, etc. The solvent may be a mixed solvent in which two or more types of solvents are mixed.

The proportion of resist polymer in the entire resist agent can be adjusted depending on the thickness of the resist film to be formed, but is preferably 10% by mass or more, more preferably 25% by mass or more, and preferably 70% by mass or less, more preferably 60% by mass or less.

The resist agent does not need to contain any components other than the resist polymer and the solvent, but may contain other components. Examples of other components include additive components such as leveling agents, light stabilizers, and antioxidants, and polymer components such as acrylic resins, polyester resins, and epoxy resins. The ratio of other components is 10 parts by mass or less, and more preferably 5 parts by mass or less, per 100 parts by mass of the resist polymer. In addition, the resist agent may contain residues such as unpolymerized polysilane and vinyl polymer when the first polymer and the second polymer are polymerized.

The resist agent of this embodiment can be coated on the surface of a wafer by a method such as spin coating to form a resist film. The formed resist film can be patterned by removing street portions by irradiating with a UV laser. The patterned resist film can be used as a mask to irradiate with plasma and etch the wafer, thereby dicing the wafer. The thickness of the resist film formed on the surface of the wafer is not particularly limited, but is preferably 10 μm or more, more preferably 20 μm or more, and even more preferably 25 μm or more from the viewpoint of resist properties, and is preferably 50 μm or less, more preferably 40 μm or less, and even more preferably 35 μm or less from the viewpoint of laser processability.

The wavelength of the UV laser light used to pattern the resist agent of this embodiment is not particularly limited, but can be about 200 nm to 400 nm, with a wavelength of 355 nm being preferred. The frequency of the laser light is also not particularly limited, but can be, for example, about 1 kHz to 300 kHz, with a higher frequency being preferred from the perspective of high-speed processing.

The resist agent of this embodiment can be used not only for plasma dicing of wafers, but also as a resist agent capable of laser patterning, and as a protective film for processes that require heat resistance.

The resin composition of the present disclosure will be described in more detail below using examples. The following examples are illustrative and are not intended to limit the present invention.

<Formation of Resist Film>
The prepared resist agent was applied to the surface of a silicon wafer (φ8 inch, thickness 700 μm) using a spin coater, and the solvent was dried to form a resist film. The rotation speed of the spin coater was set to 200 rpm, and the thickness of the resist film was set to 30 μm.

<Evaluation of liquid stability over time>
The prepared resin solution was placed in a transparent, sealed container and allowed to stand at room temperature for 7 days, after which the appearance of the resin solution and the presence or absence of precipitate were visually observed and the liquid stability over time was evaluated according to the following evaluation criteria.

(Evaluation Criteria)
A: The solution is neither cloudy nor has any precipitate.

B: There is slight cloudiness, but no sediment.

C: Separation or sediment is present.

<Evaluation of heat resistance>
5 g of the produced resin solution was placed in an aluminum cup and dried in an oven at 100°C for 180 minutes to evaporate the solvent. The non-volatile components remaining in the aluminum cup were measured for 10% weight loss temperature using a thermogravimetric differential thermal analyzer (TG-DTA). The measurement conditions were a temperature rise rate of 20°C/min and heating from 30°C to 600°C in a nitrogen atmosphere. The measurement results were evaluated for heat resistance according to the following evaluation criteria.

(Evaluation Criteria)
A: 10% weight loss temperature is 250°C or higher.

B: 10% weight loss temperature is 200°C or higher but less than 250°C.

C: 10% weight loss temperature is less than 200°C.

<Evaluation of coating surface quality>
The surface condition of the formed resist film was visually observed and the coating surface quality was evaluated according to the following evaluation criteria.

(Evaluation Criteria)
A: The coating film is uniform and free of irregularities.

B: Minor unevenness (citrus peel) is visible.

C: The coating has defects such as cracks and graininess.

<Evaluation of Laser Processability>
The surface of the formed resist film was patterned using a UV laser processing device (AL300P, manufactured by Tokyo Seimitsu) to form a checkerboard pattern with a line width of 15 μm, a line length of 15 mm, and a pitch of 1 mm. The processing conditions were laser wavelength: 355 nm, pulse width: <15 ns, and frequency: 50 kHz. The processing speed was 600 mm/sec or 800 mm/sec. The laser-processed portion was observed at a magnification of 200 times using a microscope, and the laser processability was evaluated according to the following evaluation criteria.

(Evaluation Criteria)
A: There is no peeling of the coating film at the laser processed end, and no resist residue.

B: A small amount of resist residue remains on the laser processed edge.

C: Part of the resist film remains in the laser irradiated area, or defects such as peeling of the coating or cracks are found on the laser processed edge.

<Evaluation of resist properties>
After evaluating the laser processability, a plasma etching process was performed from the resist film side using a plasma etching device. The processing conditions at this time were: plasma source: ICP plasma power 2200 W, process gas: SF6 gas, gas pressure: 2 Pa, processing time: 7 minutes. The surface of the resist film after the plasma etching process was observed at 200 times magnification with a microscope, and the resist properties were evaluated according to the following evaluation criteria.

(Evaluation Criteria)
A: No erosion of the resist film due to plasma etching is observed.

B: Erosion due to plasma etching is visible, but the silicon wafer is not exposed.

C: The resist film has disappeared, revealing the exposed silicon wafer.

<Measurement of UV transmittance>
The resin solution thus prepared was applied to the surface of a polyethylene terephthalate (PET) film having a thickness of 50 μm by a spin coater to form a resin film. The thickness of the resin film after drying was set to 10 μm. The transmittance of ultraviolet light having a wavelength of 355 nm was measured for the PET film on which the resin film was formed using a spectrophotometer. The transmittance of the PET film before the resin film was formed was subtracted as a blank from the obtained transmittance to obtain the transmittance of the resin film.

Example 1
The first polymer was a copolymer of polysilane and a methacrylate-based ultraviolet absorbing monomer having a benzotriazole skeleton. The polysilane used had a number average molecular weight (Mn) of 900 and a weight average molecular weight (Mw) of 1100 (Oxol SI-20-10, manufactured by Osaka Gas Chemicals). The ultraviolet absorbing monomer was 3-(2H-benzotriazol-2-yl)-4-hydroxyphenethyl methacrylate (RUVA-93, manufactured by Otsuka Chemicals). 44.2 g of polysilane and 15.8 g of the ultraviolet absorbing monomer were dissolved in 40 g of toluene and copolymerized to obtain a solution of the first polymer. The copolymerization was performed by irradiating the liquid with ultraviolet light for 60 minutes using a high-pressure mercury lamp (UV intensity: 170 mW/cm ² ) at a liquid temperature of 60°C to 70°C under a nitrogen gas flow.

The polymer obtained by fractionating the first polymer solution using gel permeation chromatography (GPC) was subjected to infrared spectroscopy (IR) analysis, and a spectrum combining the spectrum of polysilane and the spectrum of the ultraviolet absorbing monomer was obtained. In addition, a peak of an acrylic polymer chain was confirmed at a chemical shift of 0.5 ppm to 4.5 ppm by ¹ H NMR spectroscopy. From these results, it was determined that the first polymer obtained was a copolymer of polysilane and the ultraviolet absorbing monomer. The Mw of the first polymer obtained was 3,900.

The second polymer was a copolymer (Banaresin UVA-7075, manufactured by Shin-Nakamura Chemical Co., Ltd.) in which a methacrylate monomer having a benzotriazole skeleton was used as the first monomer and methyl methacrylate was used as the second monomer. The ratio of the first monomer to the second polymer was 70% by mass, and the weight average molecular weight (Mw) was 30,000 to 50,000. Toluene was added to a solution containing 3.16 g of the second polymer to make the amount of solvent 23.1 g, to prepare a solution of the second polymer.

A resist agent was prepared by mixing a solution of the first polymer and a solution of the second polymer. The ratio of the second polymer to 100 parts by mass of the first polymer in the resist agent was 5.3 parts by mass. The ratio of the solid content of the first polymer and the second polymer combined in the resist agent was 50% by mass. The obtained resist agent was evaluated for liquid stability over time, coating surface quality, laser processability, resist properties, heat resistance, and UV transmittance. The liquid stability over time was A, the coating surface quality of the resist film was A, the laser processability was A when the processing speed was 600 mm/s and B when it was 800 mm/s, the resist properties were A, the heat resistance was A, and the UV transmittance was 0%.

Example 2
The second polymer solution was prepared in the same manner as in Example 1, except that the second polymer was 6.68 g and the solvent was 26.6 g.

The ratio of the second polymer to 100 parts by mass of the first polymer was 11.1 parts by mass, and the solid content in the resist agent was 50% by mass. The liquid stability over time was A, the coating surface quality was A, the laser processability was A at both processing speeds of 600 mm/s and 800 mm/s, the resist property was A, the heat resistance was A, and the UV transmittance was 0%.

Example 3
The second polymer solution was prepared in the same manner as in Example 1, except that the second polymer was 15.0 g and the solvent was 35.0 g.

The ratio of the second polymer to 100 parts by mass of the first polymer was 25.0 parts by mass, and the solid content in the resist agent was 50% by mass. The liquid stability over time was A, the coating surface quality was A, the laser processability was A at both processing speeds of 600 mm/s and 800 mm/s, the resist property was A, the heat resistance was A, and the UV transmittance was 0%.

Example 4
The second polymer solution was prepared in the same manner as in Example 1, except that the second polymer was 25.7 g and the solvent was 45.7 g.

The ratio of the second polymer to 100 parts by mass of the first polymer was 42.8 parts by mass, and the solid content in the resist agent was 50% by mass. The liquid stability over time was A, the coating surface quality was B, the laser processability was A at both processing speeds of 600 mm/s and 800 mm/s, the resist property was A, the heat resistance was A, and the UV transmittance was 0%.

Example 5
The same procedure as in Example 1 was carried out except that the second polymer was a resin (Banaresin UVA-8050, manufactured by Shin-Nakamura Chemical Co., Ltd.) having a weight average molecular weight (Mw) of 40,000 to 60,000 in which the ratio of the first monomer to the second polymer was 50% by mass, and the solution of the second polymer was made of 6.68 g of the second polymer and 26.6 g of the solvent.

The ratio of the second polymer to 100 parts by mass of the first polymer was 11.1 parts by mass, and the solid content in the resist agent was 50% by mass. The liquid stability over time was A, the coating surface quality was A, the laser processability was A at both processing speeds of 600 mm/s and 800 mm/s, the resist property was A, the heat resistance was A, and the UV transmittance was 0%.

Example 6
The procedure was the same as in Example 2, except that 57.0 g of polysilane and 3.0 g of an ultraviolet absorbing monomer were dissolved in 40 g of toluene and copolymerized to obtain a solution of a first polymer.

The ratio of the second polymer to 100 parts by mass of the first polymer was 11.1 parts by mass, and the solid content in the resist agent was 50% by mass. The liquid stability over time was A, the coating surface quality was A, the laser processability was A when the processing speed was 600 mm/s and B when it was 800 mm/s, the resist property was A, the heat resistance was A, and the UV transmittance was 0%.

(Example 7)
The procedure was the same as in Example 2, except that 18.0 g of polysilane and 42.0 g of an ultraviolet absorbing monomer were dissolved in 40 g of toluene and copolymerized to obtain a solution of a first polymer.

The ratio of the second polymer to 100 parts by mass of the first polymer was 11.1 parts by mass, and the solid content in the resist agent was 50% by mass. The liquid stability over time was A, the coating surface quality was A, the laser processability was A at both processing speeds of 600 mm/s and 800 mm/s, the resist property was A, the heat resistance was B, and the UV transmittance was 0%.

(Example 8)
The procedure was the same as in Example 2, except that the polysilane used was a polysilane having an Mn of 1,100 and an Mw of 1,800 (Ogsol SI-10-20, manufactured by Osaka Gas Chemicals).

The ratio of the second polymer to 100 parts by mass of the first polymer was 11.1 parts by mass, and the solid content in the resist agent was 50% by mass. The liquid stability over time was A, the coating surface quality was A, the laser processability was A at both processing speeds of 600 mm/s and 800 mm/s, the resist property was A, the heat resistance was A, and the UV transmittance was 0%.

The conditions and evaluation results for Examples 1 to 8 are shown in Table 1.

(Reference Example 1)
The first polymer was prepared by dissolving 52.5 g of polysilane and 22.5 g of ultraviolet absorbing monomer in 75 g of toluene and copolymerizing them, and the resist agent was prepared without adding the second polymer. The resist film was evaluated with a thickness of 10 μm.

The liquid stability over time was A, the coating surface quality was A, the laser processability was A when the processing speed was 600 mm/s and B when it was 800 mm/s, the resist property was A, the heat resistance was A, and the UV transmittance was 0%.

(Reference Example 2)
The same procedure as in Example 1 was repeated, except that the evaluation was performed with the resist film having a thickness of 30 μm.

Liquid stability over time was A, coating surface quality was A, laser processability was A when the processing speed was 600 mm/s and C when it was 800 mm/s, resist property was A, heat resistance was A, and UV transmittance was 0%.

The conditions and evaluation results for Reference Examples 1 and 2 are shown in Table 2.

(Comparative Example 1)
The resist agent was prepared by dissolving 75.0 g of polyvinyl alcohol (PVA-205, manufactured by Kuraray) in 75.0 g of distilled water.

The liquid stability over time was A, the coating surface quality was A, the laser processability was C at a processing speed of 600 mm/s, the resist property was A, the heat resistance was C, and the UV transmittance was 90%. Note that the processability at a processing speed of 800 mm/s was not evaluated.

(Comparative Example 2)
The resist agent was prepared by dissolving 75.0 g of polysilane (Oxol SI-20-10, manufactured by Osaka Gas Chemicals) in 75.0 g of toluene.

The liquid stability over time was A, the coating surface quality was A, the laser processability was C at a processing speed of 600 mm/s, the resist property was B, the heat resistance was A, and the UV transmittance was 63%. Note that the processability at a processing speed of 800 mm/s was not evaluated.

(Comparative Example 3)
The resist agent was prepared by dissolving 52.5 g of polysilane (Oxol SI-20-10, manufactured by Osaka Gas Chemicals) and 22.5 g of a benzotriazole-based ultraviolet absorber (2-(2-hydroxy-5-t-butylphenyl)benzotriazole, Tinuvin PS, manufactured by BASF Japan) in 75.0 g of toluene. The liquid stability over time was rated C, the coating surface quality was rated C, and other items could not be evaluated.

The conditions and evaluation results for Comparative Examples 1 to 3 are shown in Table 3.

(Comparative Example 4)
The procedure was the same as in Example 1, except that the solution of the second polymer was prepared by dissolving 3.2 g of an acrylic resin having a number average molecular weight of 30,000 (Dianal BR-113, manufactured by Mitsubishi Chemical) in 23.2 g of toluene. The liquid stability over time was B, the coating surface quality was C, and other items could not be evaluated.

(Comparative Example 5)
The procedure was the same as in Comparative Example 4, except that 57.0 g of polysilane and 3.0 g of an ultraviolet absorbing monomer were dissolved in 40 g of toluene and copolymerized to prepare a solution of a first polymer. The liquid stability over time was B, the coating surface quality was C, and other items could not be evaluated.

(Comparative Example 6)
The procedure was the same as in Comparative Example 4, except that 18.0 g of polysilane and 42.0 g of an ultraviolet absorbing monomer were dissolved in 40 g of toluene and copolymerized to prepare a solution of a first polymer. The liquid stability over time was B, the coating surface quality was C, and other items could not be evaluated.

(Comparative Example 7)
The procedure was the same as in Example 1, except that the second polymer solution was prepared by adding toluene to a solution containing 3.2 g of a polyester resin (Vylon UR-1400, manufactured by Toyobo Co., Ltd.) having a number average molecular weight of 40,000 to adjust the amount of solvent to 23.2 g. The liquid stability over time was rated C, the coating surface quality was rated C, and other items could not be evaluated.

The conditions and evaluation results for Comparative Examples 4 to 7 are shown in Table 4.

The resin composition disclosed herein has excellent laser processability and is useful as an ultraviolet laser processing resist, etc.

Claims (6)

The composition comprises a first polymer and a second polymer,
the first polymer has a first block having a polysilane skeleton and a second block which is a copolymer of a vinyl monomer and contains an ultraviolet absorbing monomer unit derived from an ultraviolet absorbing monomer having an ultraviolet absorbing effect;
the second polymer is a copolymer of an acrylate monomer or a methacrylate monomer, and has a first monomer unit derived from a first monomer having an ultraviolet absorbing function and a second monomer unit derived from a second monomer having no ultraviolet absorbing function;
A resin composition for an ultraviolet laser processing resist, wherein the second polymer is 3 parts by mass or more and 50 parts by mass or less per 100 parts by mass of the first polymer. the ultraviolet absorbing monomer and the first monomer have an ultraviolet absorbing group,
2. The resin composition for ultraviolet laser processing resist according to claim 1, wherein the ultraviolet absorbing group in the ultraviolet absorbing monomer and the ultraviolet absorbing group in the first monomer are the same and have a benzotriazole skeleton, a benzophenone skeleton, or a triazine skeleton. The resin composition for ultraviolet laser processing resist according to claim 1 or 2, wherein the ratio of the first monomer unit to the second polymer is 40% by mass or more and 80% by mass or less. a ratio of the ultraviolet absorbing monomer unit in the first polymer is 3 mass% or more and 70 mass% or less,
The resin composition for ultraviolet laser processing resist according to any one of claims 1 to 3, wherein the proportion of the polysilane skeleton in the first polymer is 30 mass% or more and 97 mass% or less. A resin composition for ultraviolet laser processing resist according to any one of claims 1 to 4, which has an ultraviolet transmittance of 2% or less at a wavelength of 355 nm. A resist agent comprising the resin composition according to any one of claims 1 to 5 and a solvent.