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JP7569566B2 - Heating device and temperature measurement method using the heating device - Google Patents
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JP7569566B2 - Heating device and temperature measurement method using the heating device - Google Patents

Heating device and temperature measurement method using the heating device Download PDF

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JP7569566B2
JP7569566B2 JP2022180872A JP2022180872A JP7569566B2 JP 7569566 B2 JP7569566 B2 JP 7569566B2 JP 2022180872 A JP2022180872 A JP 2022180872A JP 2022180872 A JP2022180872 A JP 2022180872A JP 7569566 B2 JP7569566 B2 JP 7569566B2
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temperature sensor
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temperature
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JP2024070405A (en
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哲也 郷田
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Phoenix Electric Co Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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Description

本発明は、ウエハ等の加熱対象物の加熱に用いられる加熱装置、および、その加熱装置を用いた温度測定方法に関する。 The present invention relates to a heating device used to heat a heating object such as a wafer, and a temperature measurement method using the heating device.

従前より、ＬＥＤ（発光ダイオード）等の光を発する発光半導体チップで加熱対象物を加熱する技術が開発されている（例えば、特許文献１）。 Technology has been developed for some time now in which an object is heated using light-emitting semiconductor chips that emit light, such as LEDs (light-emitting diodes) (see, for example, Patent Document 1).

また、特許文献１には、光を半導体チップで受光して温度測定を行う温度センサを用いて、この加熱対象物の温度を測定することも開示されている。 Patent document 1 also discloses that the temperature of the object to be heated is measured using a temperature sensor that receives light with a semiconductor chip and measures the temperature.

特開２０２２－１１２６９４号公報JP 2022-112694 A

しかしながら、温度センサは、温度センサ自身の温度が変化すると温度測定結果にブレが出て精度よく測定できないことから、当該温度センサを加熱源である発光半導体チップから遠ざけて別の場所に配置するのが一般的であった。 However, when the temperature of the temperature sensor itself changes, the temperature measurement results become unstable and the temperature sensor cannot measure accurately, so it has been common to place the temperature sensor away from the light-emitting semiconductor chip, which is the heat source, in a separate location.

しかし、温度センサを加熱源から遠ざけて配置すると、加熱装置全体の構成が複雑になり、製造や調整が難しくなるといった問題があった。 However, placing the temperature sensor away from the heat source creates problems such as the overall configuration of the heating device becoming more complex and difficult to manufacture and adjust.

本発明は、このような課題に鑑みてなされたものであり、その目的は、加熱源である発光半導体チップの近傍に温度センサが配置できる加熱装置、および、その加熱装置を用いた温度測定方法を提供することにある。 The present invention was made in consideration of these problems, and its purpose is to provide a heating device in which a temperature sensor can be placed near the light-emitting semiconductor chip that serves as the heat source, and a temperature measurement method using the heating device.

本発明の一局面によれば、
加熱対象物に加熱用の光を放射する加熱用半導体チップと、
前記光によって加熱される前記加熱対象物の温度を測定する温度センサと、
前記加熱用半導体チップおよび前記温度センサを冷却し、前記温度センサの温度を安定させる冷却装置とを備えており、
前記加熱対象物と前記温度センサとの間には、前記温度センサが光飽和をおこして前記加熱対象物の温度が上昇しても前記温度センサの出力が上昇しない現象を回避するための減光フィルタが配置されている
加熱装置が提供される。
 According to one aspect of the present invention,
A heating semiconductor chip that radiates heating light to an object to be heated;
a temperature sensor for measuring a temperature of the object to be heated by the light;
a cooling device that cools the heating semiconductor chip and the temperature sensor and stabilizes the temperature of the temperature sensor ,
Between the object to be heated and the temperature sensor, a light-reducing filter is disposed to avoid a phenomenon in which the temperature sensor is optically saturated and the output of the temperature sensor does not increase even if the temperature of the object to be heated increases.
A heating device is provided.

好適には、
前記加熱装置は、複数の前記加熱用半導体チップおよび前記温度センサが表面に実装された基板をさらに備えている。 Preferably,
The heating device further includes a substrate having a plurality of the heating semiconductor chips and the temperature sensor mounted on its surface.

好適には、
前記温度センサの受光感度波長には、前記加熱用半導体チップから放射される前記光の波長が含まれない。 Preferably,
The wavelength of the light emitted from the heating semiconductor chip is not included in the light receiving sensitivity wavelength of the temperature sensor.

好適には、
前記加熱対象物と前記温度センサとの間には、前記加熱用半導体チップから放射される前記光のうち、前記温度センサの受光感度波長と一致する範囲の波長を含む前記光をカットするフィルターが配置されている。 Preferably,
A filter is disposed between the object to be heated and the temperature sensor to cut out the light emitted from the heating semiconductor chip that includes wavelengths in a range that matches the light receiving sensitivity wavelength of the temperature sensor.

好適には、
前記加熱用半導体チップは、レーザー、ＬＥＤ、あるいはＶＣＳＥＬである。 Preferably,
The heating semiconductor chip is a laser, an LED, or a VCSEL.

好適には、
前記温度センサは、フォトダイオードまたはフォトトランジスタである。 Preferably,
The temperature sensor is a photodiode or a phototransistor.

好適には、
前記冷却装置は、水冷またはペルチェ素子である。 Preferably,
The cooling device is a water cooling device or a Peltier element.

本発明の別の局面によれば、
加熱対象物に加熱用の光を放射する加熱用半導体チップと、
前記光によって加熱される前記加熱対象物の温度を測定する温度センサと、
前記加熱用半導体チップおよび前記温度センサを冷却し、前記温度センサの温度を安定させる冷却装置とを備えており、
前記加熱対象物と前記温度センサとの間には、前記温度センサが光飽和をおこして前記加熱対象物の温度が上昇しても前記温度センサの出力が上昇しない現象を回避するための減光フィルタが配置されている
加熱装置を用いた前記加熱対象物の温度測定方法が提供される。 According to another aspect of the present invention,
A heating semiconductor chip that radiates heating light to an object to be heated;
a temperature sensor for measuring a temperature of the object to be heated by the light;
a cooling device that cools the heating semiconductor chip and the temperature sensor and stabilizes the temperature of the temperature sensor ,
Between the object to be heated and the temperature sensor, a light-reducing filter is disposed to avoid a phenomenon in which the temperature sensor is optically saturated and the output of the temperature sensor does not increase even if the temperature of the object to be heated increases.
A method for measuring the temperature of an object to be heated using the heating device is also provided .

好適には、
前記温度センサの受光感度波長に含まれない波長の光を前記加熱用半導体チップから放射する。 Preferably,
Light having a wavelength that is not included in the light-receiving sensitivity wavelength of the temperature sensor is radiated from the heating semiconductor chip.

本発明に係る加熱装置によれば、加熱用半導体チップおよび温度センサを冷却する冷却装を備えているので、温度センサ自身の温度を一定にすることができる。これにより、加熱源である発光半導体チップの近傍に温度センサを配置しても温度センサ自身の温度が変化して温度測定結果にブレが出るのを抑制でき、加熱対象物の温度を精度よく測定することができる。 The heating device according to the present invention is equipped with a cooling device that cools the heating semiconductor chip and the temperature sensor, so the temperature of the temperature sensor itself can be kept constant. This makes it possible to suppress fluctuations in the temperature measurement results caused by changes in the temperature of the temperature sensor itself even if the temperature sensor is placed near the light-emitting semiconductor chip, which is the heat source, and allows the temperature of the object to be heated to be measured with high accuracy.

実施形態に係る加熱装置１０を示す平面図である。FIG. 1 is a plan view showing a heating device 10 according to an embodiment. 実施形態に係る加熱装置１０を示す正面図である。1 is a front view showing a heating device 10 according to an embodiment. 電流電圧変換回路２４の一例を示す図である。FIG. 2 is a diagram illustrating an example of a current-voltage conversion circuit 24. 変形例３に係る加熱装置１０を示す正面図である。FIG. 11 is a front view showing a heating device 10 according to a third modified example.

（加熱装置１０の構成）
本実施形態に係る加熱装置１０は、図１および図２に示すように、大略、基板１２と、加熱用半導体チップ１４と、温度センサ１６と、冷却装置１８とを備えている。 (Configuration of heating device 10)
As shown in FIGS. 1 and 2, the heating device 10 according to this embodiment generally includes a substrate 12, a heating semiconductor chip 14, a temperature sensor 16, and a cooling device 18.

基板１２は、その表面に複数の加熱用半導体チップ１４や温度センサ１６が実装されるものであり、図示しないが、これら加熱用半導体チップ１４や温度センサ１６に給電等するための回路や電流電圧変換回路２４も形成されている。 The substrate 12 has a number of heating semiconductor chips 14 and temperature sensors 16 mounted on its surface, and although not shown, also has circuits for supplying power to these heating semiconductor chips 14 and temperature sensors 16 and a current-voltage conversion circuit 24 formed thereon.

また、基板１２は、セラミックス、または、金属をベースにした材質で形成されている。 The substrate 12 is also made of a ceramic or metal-based material.

さらに、基板１２の表面には、一対（陽極と陰極）の加熱用半導体チップ電極パッド２０と、３つ（ＤＣ電圧印加と、アウトプットと、ＧＮＤ）の温度センサ用電極パッド２２が設けられている。 Furthermore, the surface of the substrate 12 is provided with a pair of semiconductor chip electrode pads 20 for heating (anode and cathode) and three electrode pads 22 for temperature sensors (DC voltage application, output, and GND).

図３に電流電圧変換回路２４の一例を示す。この電流電圧変換回路２４は、加熱用半導体チップ１４を発光させるための回路とは別に設けられており、温度センサ１６の電流信号を電圧信号に変換して読み取るようになっている。なお、電流電圧変換回路２４は基板１２の表面上に設けてもよいし、基板１２の外に設けてもよい。 Figure 3 shows an example of the current-voltage conversion circuit 24. This current-voltage conversion circuit 24 is provided separately from the circuit for making the heating semiconductor chip 14 emit light, and converts the current signal of the temperature sensor 16 into a voltage signal and reads it. The current-voltage conversion circuit 24 may be provided on the surface of the substrate 12, or may be provided outside the substrate 12.

具体的に、電流電圧変換回路２４は、コンデンサ２６と抵抗２８とを有しており、ＤＣ電圧印加の温度センサ用電極パッド２２が温度センサ１６（フォトトランジスタの場合）のアノードに接続されており、温度センサ１６のカソードがアウトプットの温度センサ用電極パッド２２に接続されている。また、ＧＮＤの温度センサ用電極パッド２２も温度センサ１６のカソードにコンデンサ２６を介して接続されており、アウトプットの温度センサ用電極パッド２２のラインと、ＧＮＤの温度センサ用電極パッド２２のラインとの間に抵抗２８が架橋されている。 Specifically, the current-voltage conversion circuit 24 has a capacitor 26 and a resistor 28, and the temperature sensor electrode pad 22 for applying DC voltage is connected to the anode of the temperature sensor 16 (in the case of a phototransistor), and the cathode of the temperature sensor 16 is connected to the output temperature sensor electrode pad 22. The GND temperature sensor electrode pad 22 is also connected to the cathode of the temperature sensor 16 via the capacitor 26, and a resistor 28 is bridged between the line of the output temperature sensor electrode pad 22 and the line of the GND temperature sensor electrode pad 22.

加熱対象物Ｘの温度センシング方法について具体的に説明すると、加熱対象物Ｘの温度が上がるほど電流電圧変換回路２４の出力電圧が高くなるため、事前に熱電対などの温度計で測定した加熱対象物Ｘの温度と電流電圧変換回路２４の出力電圧値について相関データを取得しておき、実際に加熱装置１０として使用する際に、事前に取得した相関データから加熱対象物Ｘの温度を計算する方法が取られる。 Specifically, the temperature sensing method for the object to be heated X will be described. As the temperature of the object to be heated X increases, the output voltage of the current-voltage conversion circuit 24 increases. Therefore, correlation data is acquired in advance between the temperature of the object to be heated X measured with a thermometer such as a thermocouple and the output voltage value of the current-voltage conversion circuit 24. When actually using the heating device 10, the temperature of the object to be heated X is calculated from the correlation data acquired in advance.

加熱用半導体チップ１４は、ウエハ等の加熱対象物Ｘを加熱するのに適した波長の光Ｌを放射するものであり、例えば、レーザー、ＬＥＤ、あるいは、ＶＣＳＥＬが考えられる。本実施形態では、４５０ｎｍの発光ピーク波長を有するＬＥＤが使用されている。なお、加熱用半導体チップ１４からの発光波長を１０００ｎｍ未満とするのが好適である。また、加熱用半導体チップ１４からの発光波長を３００ｎｍ以上１０００ｎｍ未満としてもよい。 The heating semiconductor chip 14 emits light L with a wavelength suitable for heating the heating object X such as a wafer, and may be, for example, a laser, an LED, or a VCSEL. In this embodiment, an LED with an emission peak wavelength of 450 nm is used. It is preferable that the emission wavelength from the heating semiconductor chip 14 is less than 1000 nm. The emission wavelength from the heating semiconductor chip 14 may also be 300 nm or more and less than 1000 nm.

加熱用半導体チップ１４の発光波長を１０００ｎｍ未満とする理由について、温度センサ１６は、加熱対象物Ｘを加熱した際に当該加熱対象物Ｘから放射される近赤外線を感知して温度を計測するため、加熱用半導体チップ１４から放射される光に波長１０００ｎｍ以上の光が含まれると、温度センサ１６が加熱用半導体チップ１４からの光Ｌに反応してしまい正確に温度を計測する事ができなくなるからである。 The reason why the emission wavelength of the heating semiconductor chip 14 is set to less than 1000 nm is that the temperature sensor 16 measures the temperature by sensing the near-infrared radiation emitted from the heating object X when the heating object X is heated. If the light emitted from the heating semiconductor chip 14 contains light with a wavelength of 1000 nm or more, the temperature sensor 16 will react to the light L from the heating semiconductor chip 14 and will not be able to measure the temperature accurately.

また、紫外線による加熱対象物Ｘおよび温度センサ１６の極端な劣化を防止するため、加熱用半導体チップ１４の発光波長は３００ｎｍ以上が好適である。さらに、常温（２５℃付近）の温度をセンシングするためには、一般的に中赤外から遠赤外の受光素子が使用されるが、本実施形態では、近赤外のＩｎＧａＡｓ素子を使用して少なくとも２５℃から３００℃までの温度をセンシングすることが可能である。 In order to prevent extreme deterioration of the heating object X and the temperature sensor 16 due to ultraviolet rays, the emission wavelength of the heating semiconductor chip 14 is preferably 300 nm or more. Furthermore, to sense the temperature at room temperature (around 25°C), a mid-infrared to far-infrared light receiving element is generally used, but in this embodiment, a near-infrared InGaAs element is used to sense temperatures from at least 25°C to 300°C.

加熱用半導体チップ１４としてＬＥＤを用いる場合、当該ＬＥＤの上面に、ＬＥＤの裏面とは極性が異なる電極パッド（図示せず）を設け、この電極パッドを金等でできたワイヤを介して基板１２の回路上に接続する。 When an LED is used as the heating semiconductor chip 14, an electrode pad (not shown) with a polarity different from that of the back surface of the LED is provided on the top surface of the LED, and this electrode pad is connected to the circuit of the substrate 12 via a wire made of gold or the like.

本実施形態では、１枚の基板１２の表面上に３５個の加熱用半導体チップ１４がダイアタッチ材等を介して実装されているが、１枚の基板１２に実装される加熱用半導体チップ１４の数は特に限定されるものではない。なお、加熱用半導体チップ１４は、ベアチップを基板１２に実装するだけでなく、基板１２に実装された状態のパッケージ製品であってもよい。 In this embodiment, 35 heating semiconductor chips 14 are mounted on the surface of one substrate 12 via a die attach material or the like, but the number of heating semiconductor chips 14 mounted on one substrate 12 is not particularly limited. Note that the heating semiconductor chips 14 may not only be mounted as bare chips on the substrate 12, but may also be packaged products mounted on the substrate 12.

温度センサ１６は、加熱用半導体チップ１４からの光Ｌによって加熱された加熱対象物Ｘの温度を測定するためのセンサであり、例えば、フォトダイオードや、フォトトランジスタといった温度測定用半導体チップが考えられる。本実施形態では、９００から２５００ｎｍの波長に受光感度を有するフォトダイオードが使用されている。なお、フォトダイオードの受光感度波長は、９００から１６００ｎｍであってもよい。 The temperature sensor 16 is a sensor for measuring the temperature of the heating object X heated by the light L from the heating semiconductor chip 14, and may be, for example, a semiconductor chip for measuring temperature such as a photodiode or a phototransistor. In this embodiment, a photodiode having a light receiving sensitivity at wavelengths from 900 to 2500 nm is used. The light receiving sensitivity wavelength of the photodiode may be from 900 to 1600 nm.

また、フォトダイオードについてもＬＥＤと同様、ダイアタッチ材等を介して基板１２の表面上に実装され、フォトダイオードの上面に、フォトダイオードの裏面とは極性が異なる電極パッド（図示せず）を設け、この電極パッドを金等でできたワイヤを介して基板１２の回路上に接続されている。 As with the LED, the photodiode is mounted on the surface of the substrate 12 via a die attach material or the like, and an electrode pad (not shown) with a different polarity from the back surface of the photodiode is provided on the top surface of the photodiode, and this electrode pad is connected to the circuit of the substrate 12 via a wire made of gold or the like.

また、フォトダイオードやフォトトランジスタの電気信号を増大させるための部品やノイズを除去するための電子部品を温度センサ１６と一緒に基板１２の表面に配置してもよい。なお、温度センサ１６は、ベアチップを基板１２に実装するだけでなく、基板１２に実装された状態のパッケージ製品であってもよい。 In addition, components for increasing the electrical signal of the photodiode or phototransistor and electronic components for removing noise may be placed on the surface of the substrate 12 together with the temperature sensor 16. Note that the temperature sensor 16 may not only be a bare chip mounted on the substrate 12, but may also be a packaged product mounted on the substrate 12.

本実施形態では、１枚の基板１２の表面上にひとつの温度センサ１６が実装されており、かつ、当該温度センサ１６は、加熱用半導体チップ１４が光Ｌを放射する方向（加熱対象物Ｘに向かう方向）と同じ方向に向けて配置されている。 In this embodiment, one temperature sensor 16 is mounted on the surface of one substrate 12, and the temperature sensor 16 is arranged facing the same direction as the direction in which the heating semiconductor chip 14 emits light L (toward the object to be heated X).

また、温度センサ１６を基板１２に実装する際には、熱伝導性が高いグリスやシート等を介して基板１２を冷却装置１８に固定するのが好適である。これにより、自身の温度が変化すると光電変換の特性が変化する温度測定用半導体チップの温度を安定させて、正確な温度測定を行うことができる。 When mounting the temperature sensor 16 on the substrate 12, it is preferable to fix the substrate 12 to the cooling device 18 via a highly thermally conductive grease, sheet, or the like. This stabilizes the temperature of the temperature measuring semiconductor chip, whose photoelectric conversion characteristics change when its own temperature changes, allowing for accurate temperature measurement.

さらに言えば、温度センサ１６を基板１２の中央部ではなく外縁の方に配置することで、当該温度センサ１６自身の温度を安定させることができる。 Furthermore, by placing the temperature sensor 16 on the outer edge of the substrate 12 rather than in the center, the temperature of the temperature sensor 16 itself can be stabilized.

冷却装置１８は、発光中の加熱用半導体チップ１４や温度測定中の温度センサ１６を冷却してこれらの温度が一定となるように制御するための装置である。冷却装置１８による冷却方式としては、例えば、水冷やペルチェ素子が考えられる。 The cooling device 18 is a device for cooling the heating semiconductor chip 14 during light emission and the temperature sensor 16 during temperature measurement, and controlling these temperatures to be constant. Possible cooling methods for the cooling device 18 include, for example, water cooling and Peltier elements.

（加熱装置１０の特性）
温度センサ１６による加熱対象物Ｘの温度測定結果に基づいて加熱用半導体チップ１４からの発光量を調整（例えば、加熱用半導体チップ１４に供給する電流値を調整）して、加熱対象物Ｘの加熱温度が制御される。 (Characteristics of Heating Device 10)
The heating temperature of the object X to be heated is controlled by adjusting the amount of light emitted from the heating semiconductor chip 14 (for example, by adjusting the value of the current supplied to the heating semiconductor chip 14) based on the temperature measurement result of the object X to be heated by the temperature sensor 16.

（変形例１）
上述した実施形態では、１枚の基板１２の表面に複数の加熱用半導体チップ１４と温度センサ１６とが実装されていたが、これに変えて、複数の加熱用半導体チップ１４が実装された基板１２と、温度センサ１６が実装された基板１２とを別にして、これら両方の基板１２を冷却装置１８で一定温度に制御してもよい。 (Variation 1)
In the above-described embodiment, a plurality of heating semiconductor chips 14 and a temperature sensor 16 are mounted on the surface of a single substrate 12. Alternatively, the substrate 12 on which the plurality of heating semiconductor chips 14 are mounted and the substrate 12 on which the temperature sensor 16 is mounted may be separate substrates, and both of these substrates 12 may be controlled to a constant temperature by a cooling device 18.

（変形例２）
また、加熱用半導体チップ１４からの発光量を多くするために、当該加熱用半導体チップ１４に供給する電流値を大きくすると、加熱用半導体チップ１４自身が昇温して基板１２および温度センサ１６まで昇温してしまい、冷却装置１８では温度センサ１６を一定温度に制御するのが難しい場合がある。このような場合は、加熱用半導体チップ１４の電流値に応じた温度センサ１６の温度測定結果の換算値、あるいは、基板１２の温度に応じた温度センサ１６の温度測定結果の換算値を予め用意しておくと、より正確な加熱対象物Ｘの温度測定が可能となる。 (Variation 2)
Furthermore, if the current value supplied to the heating semiconductor chip 14 is increased in order to increase the amount of light emitted from the heating semiconductor chip 14, the heating semiconductor chip 14 itself will rise in temperature, which will in turn raise the temperatures of the substrate 12 and the temperature sensor 16, making it difficult for the cooling device 18 to control the temperature sensor 16 to a constant temperature. In such cases, if a converted value of the temperature measurement result of the temperature sensor 16 corresponding to the current value of the heating semiconductor chip 14 or a converted value of the temperature measurement result of the temperature sensor 16 corresponding to the temperature of the substrate 12 is prepared in advance, the temperature of the heated object X can be measured more accurately.

（変形例３）
さらに、加熱用半導体チップ１４の発光波長と、温度センサ１６の受光感度波長とが互いに重ならないようにこれら発光波長と受光感度波長とを選択するのが好適である。これにより、ウエハ等の加熱対象物Ｘの温度をより精度良く測定することができる。また、加熱用半導体チップ１４の発光中であっても加熱対象物Ｘの温度測定が可能となる。 (Variation 3)
Furthermore, it is preferable to select the emission wavelength of the heating semiconductor chip 14 and the light receiving sensitivity wavelength of the temperature sensor 16 so that they do not overlap with each other. This allows the temperature of the heating object X, such as a wafer, to be measured with higher accuracy. Also, it becomes possible to measure the temperature of the heating object X even while the heating semiconductor chip 14 is emitting light.

なお、加熱用半導体チップ１４の発光波長と、温度センサ１６の受光感度波長とが少しでも重なる場合、図４に示すように、その重なる波長の光Ｌをカットできるカットフィルター３０を温度センサ１６の表面に配置するのが好適である。 If there is even a slight overlap between the emission wavelength of the heating semiconductor chip 14 and the light receiving sensitivity wavelength of the temperature sensor 16, it is preferable to place a cut filter 30 capable of cutting the light L of the overlapping wavelength on the surface of the temperature sensor 16, as shown in Figure 4.

また、加熱対象物Ｘから放射される近赤外線の量が温度センサ１６の許容量に対して大きすぎると、温度センサ１６が光飽和をおこして、加熱対象物Ｘの温度が上昇しても当該温度センサ１６の出力電流または出力電圧が上昇しない現象が発生し正しく温度が測定できなくなる場合がある。そのような場合、温度センサ１６と加熱対象物Ｘとの間に減光フィルターを配置する事で正しく温度が測定できる。 In addition, if the amount of near-infrared radiation emitted from the object to be heated X is too large for the tolerance of the temperature sensor 16, the temperature sensor 16 may become optically saturated, causing the output current or output voltage of the temperature sensor 16 to not increase even if the temperature of the object to be heated X increases, making it impossible to measure the temperature correctly. In such cases, the temperature can be measured correctly by placing a neutral density filter between the temperature sensor 16 and the object to be heated X.

今回開示された実施の形態はすべての点で例示であって制限的なものではないと考えられるべきである。本発明の範囲は、上記した説明ではなく、特許請求の範囲によって示され、特許請求の範囲と均等の意味および範囲内でのすべての変更が含まれることが意図される。 The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The scope of the present invention is indicated by the claims, not by the above description, and is intended to include all modifications within the meaning and scope of the claims.

１０…加熱装置、１２…基板、１４…加熱用半導体チップ、１６…温度センサ、１８…冷却装置
２０…加熱用半導体チップ電極パッド、２２…温度センサ用電極パッド、２４…電流電圧変換回路、２６…コンデンサ、２８…抵抗
３０…カットフィルター
Ｘ…加熱対象物、Ｌ…光 REFERENCE SIGNS LIST 10 heating device, 12 substrate, 14 heating semiconductor chip, 16 temperature sensor, 18 cooling device, 20 heating semiconductor chip electrode pad, 22 temperature sensor electrode pad, 24 current-voltage conversion circuit, 26 capacitor, 28 resistor, 30 cut filter, X heating object, L light

Claims (9)

加熱対象物に加熱用の光を放射する加熱用半導体チップと、
前記光によって加熱される前記加熱対象物の温度を測定する温度センサと、
前記加熱用半導体チップおよび前記温度センサを冷却し、前記温度センサの温度を安定させる冷却装置とを備えており、
前記加熱対象物と前記温度センサとの間には、前記温度センサが光飽和をおこして前記加熱対象物の温度が上昇しても前記温度センサの出力が上昇しない現象を回避するための減光フィルタが配置されている
加熱装置。 A heating semiconductor chip that radiates heating light to an object to be heated;
a temperature sensor for measuring a temperature of the object to be heated by the light;
a cooling device that cools the heating semiconductor chip and the temperature sensor and stabilizes the temperature of the temperature sensor ,
Between the object to be heated and the temperature sensor, a light-reducing filter is disposed to prevent the temperature sensor from becoming optically saturated and the output of the temperature sensor from increasing even if the temperature of the object to be heated increases.
Heating device. 前記加熱装置は、複数の前記加熱用半導体チップおよび前記温度センサが表面に実装された基板をさらに備えている
請求項１に記載の加熱装置。 The heating device according to claim 1 , further comprising a substrate having a plurality of the heating semiconductor chips and the temperature sensor mounted on a surface thereof. 前記温度センサの受光感度波長には、前記加熱用半導体チップから放射される前記光の波長が含まれない
請求項１に記載の加熱装置。 The heating device according to claim 1 , wherein the wavelength of the light radiated from the heating semiconductor chip is not included in the light receiving sensitivity wavelength of the temperature sensor. 前記加熱対象物と前記温度センサとの間には、前記加熱用半導体チップから放射される前記光のうち、前記温度センサの受光感度波長と一致する範囲の波長を含む前記光をカットするフィルターが配置されている
請求項１に記載の加熱装置。 The heating device according to claim 1, wherein a filter is disposed between the object to be heated and the temperature sensor, the filter cutting out light emitted from the heating semiconductor chip that includes a wavelength range that matches the light receiving sensitivity wavelength of the temperature sensor. 前記加熱用半導体チップは、レーザー、ＬＥＤ、あるいはＶＣＳＥＬである
請求項１に記載の加熱装置。 The heating device according to claim 1 , wherein the heating semiconductor chip is a laser, an LED, or a VCSEL. 前記温度センサは、フォトダイオードまたはフォトトランジスタである
請求項１に記載の加熱装置。 The heating device according to claim 1 , wherein the temperature sensor is a photodiode or a phototransistor. 前記冷却装置は、水冷またはペルチェ素子である
請求項１に記載の加熱装置。 The heating device according to claim 1 , wherein the cooling device is a water-cooling device or a Peltier element. 加熱対象物に加熱用の光を放射する加熱用半導体チップと、
前記光によって加熱される前記加熱対象物の温度を測定する温度センサと、
前記加熱用半導体チップおよび前記温度センサを冷却し、前記温度センサの温度を安定させる冷却装置とを備えており、
前記加熱対象物と前記温度センサとの間には、前記温度センサが光飽和をおこして前記加熱対象物の温度が上昇しても前記温度センサの出力が上昇しない現象を回避するための減光フィルタが配置されている
加熱装置を用いた前記加熱対象物の温度測定方法。 A heating semiconductor chip that radiates heating light to an object to be heated;
a temperature sensor for measuring a temperature of the object to be heated by the light;
a cooling device that cools the heating semiconductor chip and the temperature sensor and stabilizes the temperature of the temperature sensor ,
Between the object to be heated and the temperature sensor, a light-reducing filter is disposed to prevent the temperature sensor from becoming optically saturated and the output of the temperature sensor from increasing even if the temperature of the object to be heated increases.
A method for measuring the temperature of an object to be heated using a heating device. 前記温度センサの受光感度波長に含まれない波長の光を前記加熱用半導体チップから放射する
請求項８に記載の温度測定方法。
 The temperature measuring method according to claim 8 , wherein light having a wavelength not included in the light-receiving sensitivity wavelength range of the temperature sensor is radiated from the heating semiconductor chip.
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