JP7577639B2 - Power Conversion Equipment - Google Patents

Description

This disclosure relates to a power conversion device.

Power conversion devices such as uninterruptible power supplies are known. For example, JP 2016-115894 A (Patent Document 1) discloses a power conversion device having multiple semiconductor modules stacked in multiple stages inside a housing. The housing in Patent Document 1 has multiple air channels provided for each group of multiple semiconductor units. The top plate of the housing is provided with ventilation holes.

JP 2016-115894 A

In the case disclosed in Patent Document 1, the air exhausted from the lower semiconductor module of each group is less likely to move toward the top plate due to the air exhausted from the upper semiconductor module of the same group.

The present disclosure has been made in consideration of the above problems, and its purpose is to provide a power conversion device that can efficiently guide the air exhausted from a semiconductor module toward the top surface.

The power conversion device of the present disclosure includes a housing having a top surface and a back surface, with a ventilation hole formed on the top surface, and a plurality of semiconductor modules each having an air intake port, an exhaust port, and a first fan, and arranged in multiple stages within the housing so that each exhaust port faces the rear surface. Each first fan draws air outside the housing into the semiconductor module through the air intake port, and discharges the drawn air into the inside of the housing through the exhaust port. The plurality of semiconductor modules includes at least a first semiconductor module located a first predetermined stage below the topmost semiconductor module, a second semiconductor module located one stage below the first semiconductor module, and a third semiconductor module located a second predetermined stage below the second semiconductor module. The power conversion device further includes a first partition plate that is provided on the exhaust port side and separates the flow path of air exhausted by each semiconductor module of the first group from the top semiconductor module to the first semiconductor module from the flow path of air exhausted by each semiconductor module of the second group from the second semiconductor module to the third semiconductor module, a first straightening plate that guides the air exhausted from the exhaust port by one semiconductor module included in the first group toward the top surface, and a second straightening plate that guides the air exhausted from the exhaust port by one semiconductor module included in the second group toward the top surface.

The above disclosure makes it possible to efficiently guide the air exhausted from the semiconductor module toward the top surface.

FIG. 2 is a front view of the power conversion device. FIG. 2 is a perspective view of a semiconductor module. FIG. 2 is a perspective view of the semiconductor module as viewed from the rear side. FIG. 2 is a perspective view of a power conversion device. 5 is a cross-sectional view taken along line VV in FIG. 4. 6 is a cross-sectional view taken along line VI-VI in FIG. 4. 7 is a cross-sectional view taken along line VII-VII in FIG. 4. 11 is a diagram showing a simulation result when the power conversion device is modeled and an air flow is simulated. FIG. 13 is a diagram showing a simulation result of an air flow using a model in which the air straightening plate is removed from the power conversion device. FIG. 11 is a diagram showing a simulation result of an air flow simulation using a model in which the partition plate, the straightening plate, and the blocking plate are removed from the power conversion device. FIG.

The following describes a power conversion device according to an embodiment of the present invention with reference to the drawings. In more detail, an uninterruptible power supply, which is one type of power conversion device, is used as an example. Note that in the following description, identical components are given the same reference numerals. Their names and functions are also the same. Therefore, detailed descriptions of them will not be repeated.

In addition, in the embodiments described below, numbers, amounts, etc. may be mentioned, but the scope of this disclosure is not necessarily limited to those numbers, amounts, etc. Furthermore, the drawings are not illustrated according to the actual dimensional ratios, and in some places, the ratios are changed to clarify the structure in order to make it easier to understand.

Figure 1 is a front view of a power conversion device according to this embodiment. As shown in Figure 1, the power conversion device 1 includes a housing 2 and semiconductor modules 801 to 807. The housing 2 includes a front surface 201 that functions as a door. In this example, the front surface 201 is mesh-like to allow air to pass from the outside to the inside of the housing 2.

The semiconductor modules 801 to 807 are arranged in multiple stages in the vertical direction (Z-axis direction) inside the housing 2. The semiconductor module 801 is the topmost module. More specifically, the semiconductor module 801 is the topmost module among multiple modules having fans. The semiconductor module 807 is the bottommost module.

In this example, the semiconductor modules 801 to 806 are uninterruptible power supply modules (also referred to as "UPS (Uninterruptible Power System) modules"). The semiconductor module 807 is a bypass module. In this manner, the semiconductor modules 801 to 806 are semiconductor modules having the same function. The semiconductor module 807 is a semiconductor module having a function different from the semiconductor modules 801 to 806 .

In this way, the power conversion device 1 has multiple semiconductor modules 801 to 807 arranged in multiple stages in the vertical direction (Z-axis direction) within the housing 2. For ease of explanation, any one of the semiconductor modules 801 to 807 will be referred to as "semiconductor module 800" below. The XYZ coordinate system is a coordinate system in which the X-axis, Y-axis, and Z-axis are mutually orthogonal. The Z-axis is the vertical axis.

Figure 2 is a perspective view of the semiconductor module 801. As shown in Figure 2, the semiconductor module 801 includes a housing 810. The housing 810 has a front surface 811. The front surface 811 has three air intake ports 820 arranged in the horizontal direction (X-axis direction). A fan 840 is installed in each air intake port 820.

Figure 3 is a perspective view of the semiconductor module 801 from the rear side. As shown in Figure 3, the housing 810 has a rear surface 812. An exhaust port 830 is formed in the rear surface 812. In addition, a terminal block 850 is installed on the rear surface 812.

As described above, the semiconductor module 801 has an air intake 820, an exhaust 830, and a fan 840.

In this example, semiconductor modules 802 to 806 have the same hardware configuration as semiconductor module 801. Semiconductor module 807 differs from semiconductor modules 801 to 806, which have three ventilation holes and three fans, in that it has two ventilation holes and two fans.

Figure 4 is a perspective view of the power conversion device 1. As shown in Figure 4, the housing 2 of the power conversion device 1 has a front surface 201, a rear surface 202, a top surface 203, a bottom surface 204, and side surfaces 205 and 206. The front surface 201 and the rear surface 202 are parallel. The top surface 203 and the bottom surface 204 are parallel. The side surfaces 205 and the side surfaces 206 are parallel.

In this example, six ventilation holes 231 are formed on the top surface 203. In this manner, the housing 2 has a top surface 203 and a rear surface 202, and the ventilation holes 231 are formed on the top surface 203.

The power conversion device 1 is installed on the floor of a building with the rear surface 202 of the housing 2 in contact with a wall (not shown) of the building or with the rear surface 202 close to the wall. Therefore, the power conversion device 1 has a ventilation opening 231 on the top surface 203.

As described above, the power conversion device 1 includes a plurality of semiconductor modules 801-807 inside the housing 2. The power conversion device 1 includes a communication module 851 for external communication above the semiconductor module 801. The communication module 851 does not include a fan. The power conversion device 1 includes partition plates 301, 302, rectifying plates 501-506, and a blocking plate 400.

Figure 5 is a cross-sectional view taken along line V-V in Figure 4. Figure 6 is a cross-sectional view taken along line VI-VI in Figure 4. Figure 7 is a cross-sectional view taken along line VII-VII in Figure 4.

As shown in Figures 5 to 7, the semiconductor modules 801 to 807 are arranged in multiple stages inside the housing 2 so that each exhaust port 830 faces the rear surface 202 of the housing 2.

Note that the examples in Figures 5 to 7 show a state in which the upper and lower semiconductor modules 800 are in contact with each other in the vertical direction (Z-axis direction). In other words, they show a state in which the semiconductor modules 801 to 807 are stacked in multiple tiers. However, this is not limited thereto, and the upper and lower semiconductor modules 800 may be spaced apart in the vertical direction. In the power conversion device 1, it is sufficient that the semiconductor modules 800 are arranged in multiple tiers.

The fan 840 of each semiconductor module 800 draws air from outside the housing 2 into the semiconductor module 800 through the air intake 820, and expels the drawn air into the housing 2 through the exhaust 830.

As shown in Figs. 5 and 7, a fan 600 is installed in the ventilation opening 231 provided on the top surface 203 of the housing 2. The fan 600 exhausts air inside the housing 2 to the outside of the housing 2.

In this example, each semiconductor module 800 is fixed by two pillars (not shown) on the front 201 side, pillars 251, 252 (FIG. 7) on the rear 202 side, and two brackets (not shown) each fixed to the front pillar and rear pillar, which are provided inside the housing 2. Each pillar is disposed in the Z-axis direction (vertical direction), and each bracket is disposed in the Y-axis direction. The method of installing the semiconductor module 800 is not limited to this.

The power conversion device 1 includes a first group consisting of three semiconductor modules 800, from the topmost semiconductor module 801 to semiconductor module 803, and a second group consisting of three semiconductor modules, from semiconductor module 804 to semiconductor module 806.

The semiconductor module 803 is two stages below the top semiconductor module 801. The semiconductor module 804 is one stage below the semiconductor module 803. The semiconductor module 806 is two stages below the semiconductor module 804. The number of semiconductor modules 800 constituting the first group and the number of semiconductor modules 800 constituting the second group do not necessarily have to be the same.

The partition plates 301 and 302, the flow straightening plates 501 to 506, and the blocking plate 400 are described below.

(Partition plate 301)
As shown in Fig. 5, the partition plate 301 is provided on the exhaust port 830 side of the semiconductor module 800. As shown in Fig. 7, the partition plate 301 has an upper end surface 315, a lower end surface 316, and side surfaces 317 and 318. The lower end surface 316 is the lower surface of the bottom portion 311 (Fig. 5). In this example, the partition plate 301 is attached to the supports 251 and 252. The attachment location of the partition plate 301 is not limited to the supports 251 and 252.

As shown in Figures 5 to 7, the partition plate 301 separates the flow path of the air exhausted by each of the semiconductor modules 801 to 803 in the first group from the flow path of the air exhausted by each of the semiconductor modules 804 to 806 in the second group. Note that the separation of the flow paths by the partition plate 301 does not have to be a complete separation of the flow paths. As in this example, a space (flow path) may be formed in which the air exhausted by each of the semiconductor modules 801 to 803 in the first group and the air exhausted by each of the semiconductor modules 804 to 806 in the second group are partially mixed.

As shown in FIG. 5, the partition plate 301 has a bottom portion 311 extending in the positive direction of the Y axis toward the rear surface 202 of the housing 2, and a wall portion 312 extending in the positive direction of the Z axis (vertically upward) toward the top surface 203. The bottom portion 311 has a tip portion 311a on the wall portion 312 side, and a base end portion 311b on the opposite side to the tip portion 311a. The base end portion 311b is located between the exhaust port 830 of the semiconductor module 803 and the exhaust port 830 of the semiconductor module 804 in the vertical direction.

The wall portion 312 is positioned higher than the bottom portion 311. The partition plate 301 further has an inclined portion 313 between the bottom portion 311 and the wall portion 312. The wall portion 312 extends to the position of the uppermost semiconductor module 801. More specifically, the upper end surface 315 of the partition plate 301 is positioned higher than the exhaust port 830 of the semiconductor module 801.

The bottom 311 and the side surfaces 205, 206 of the housing 2 are spaced apart in the X-axis direction in order to lay wiring inside the housing 2. More specifically, as shown in FIG. 7, the side surface 317 of the partition plate 301 is spaced apart from the side surface 205 of the housing 2, and the side surface 318 is spaced apart from the side surface 206 of the housing 2. Specifically, gaps 291 and 292 are formed on the left and right sides of the partition plate 301. More specifically, the partition plate 301 overlaps with all areas of the exhaust ports 830 of the semiconductor modules 801 to 803 in rear view in FIG. 7.

The bottom 311 may be inclined at a predetermined angle with respect to the horizontal plane. The wall 312 is not limited to being inclined vertically, and may be inclined at a predetermined angle. The partition plate 301 may have a curved portion that curves upward toward the back surface 202, instead of the inclined portion 313.

(Partition plate 302)
As shown in Fig. 5, the partition plate 302, like the partition plate 301, is provided on the exhaust port 830 side of the semiconductor module 800. As shown in Fig. 7, the partition plate 302 has an upper end surface 325, a lower end surface 326, and side surfaces 327 and 328. The lower end surface 326 is the lower surface of the bottom portion 321 (Fig. 5). In this example, the partition plate 302 is attached to the supports 251 and 252. The attachment location of the partition plate 302 is not limited to the supports 251 and 252.

As shown in Figures 5 to 7, the partition plate 302 separates the flow path of the air exhausted by each of the semiconductor modules 804 to 806 in the second group from the flow path of the air exhausted by the lowest semiconductor module 807. Note that the separation of the flow paths by the partition plate 302 does not have to be a complete separation of the flow paths. As in this example, a space (flow path) may be formed in which the air exhausted by each of the semiconductor modules 804 to 806 in the second group and the air exhausted by the lowest semiconductor module 807 are partially mixed.

As shown in FIG. 5, the partition plate 302 has a bottom portion 321 extending in the positive direction of the Y axis, and a wall portion 322 extending in the positive direction of the Z axis (vertically upward). The bottom portion 321 has a tip portion 321a on the wall portion 322 side, and a base end portion 321b on the opposite side to the tip portion 321a. The base end portion 321b is located between the exhaust port 830 of the semiconductor module 806 and the exhaust port 830 of the semiconductor module 807 in the vertical direction.

The wall portion 322 is positioned higher than the bottom portion 321. The partition plate 302 further has an inclined portion 323 between the bottom portion 321 and the wall portion 322. The wall portion 322 abuts against the rear surface 202. The wall portion 322 is farther away from the multiple semiconductor modules 800 than the wall portion 312 of the partition plate 301.

The bottom 321 and the side surfaces 205, 206 of the housing 2 are spaced apart in the X-axis direction in order to lay wiring inside the housing 2. In more detail, as shown in FIG. 7, the side surface 327 of the partition plate 302 is spaced apart from the side surface 205 of the housing 2, and the side surface 328 is spaced apart from the side surface 206 of the housing 2. More specifically, the length and position of the partition plate 302 in the X-axis direction are the same as those of the partition plate 301.

The bottom 321 may be inclined at a predetermined angle with respect to the horizontal plane. The wall 322 is not limited to being inclined vertically, and may be inclined at a predetermined angle. The partition plate 302 may have a curved portion that curves upward toward the back surface 202, instead of the inclined portion 323.

(straightening plates 501 to 503)
The rectifying plate 501 guides the air discharged from the exhaust port 830 of the semiconductor module 801 included in the first group toward the top surface 203 of the housing 2 (upward). The air discharged from each exhaust port 830 of the semiconductor modules 802 and 803 included in the first group is guided toward the top surface 203 of the housing 2 .

The rectifying plate 501 is attached at a position corresponding to the exhaust port 830 of the semiconductor module 801. More specifically, the rectifying plate 501 is attached below the exhaust port 830. The rectifying plate 501 extends upward from the lower part of the exhaust port 830 of the semiconductor module 801 toward the rear surface 202 of the housing 2.

Similarly, the rectifying plates 502 and 503 are attached at positions corresponding to the exhaust ports 830 of the semiconductor modules 802 and 803, respectively (more specifically, below each exhaust port 830). The rectifying plates 502 and 503 extend upward from the lower portions of the exhaust ports 830 of the semiconductor modules 802 and 803, respectively, toward the rear surface 202 of the housing 2.

In this example, the straightening plates 501 to 503 have the same shape. As shown in FIG. 7, the straightening plates 501 to 503 have a length (width) in the X-axis direction that is equal to or greater than the length of each exhaust port 830 in the X-axis direction in order to efficiently straighten the air exhausted from the exhaust port 830.

As described above, it is preferable that the rectifying plates 501-503 are attached to each of the semiconductor modules 801-803. However, this is not limited to the above, and it is sufficient that the rectifying plate is attached to at least one of the semiconductor modules 800 of the semiconductor modules 801-803 included in the first group.

(straightening plates 504 to 506)
The rectifying plate 504 guides the air discharged from the exhaust port 830 of the semiconductor modules 804 included in the second group toward the top surface 203 of the housing 2. Similarly, the rectifying plates 505 and 506 each guide the air discharged from the exhaust port 830 of the semiconductor modules 804 included in the second group toward the top surface 203 of the housing 2. The semiconductor modules 805 and 806 included in the group guide the air discharged from each exhaust port 830 toward the top surface 203 of the housing 2 .

The rectifying plate 504 is attached at a position corresponding to the exhaust port 830 of the semiconductor module 804 (more specifically, below the exhaust port 830). The rectifying plate 504 extends upward from the lower part of the exhaust port 830 of the semiconductor module 804 toward the rear surface 202 of the housing 2.

Similarly, the rectifying plates 505 and 506 are attached at positions corresponding to the exhaust ports 830 of the semiconductor modules 805 and 806, respectively (more specifically, below each exhaust port 830). The rectifying plates 505 and 506 extend upward from the lower portions of the exhaust ports 830 of the semiconductor modules 805 and 806, respectively, toward the rear surface 202 of the housing 2.

In this example, the rectifying plates 504 to 506 have the same shape as the rectifying plates 501 to 503. As shown in FIG. 7, like the rectifying plates 501 to 503, the length (width) of the rectifying plates 504 to 506 in the X-axis direction is equal to or greater than the length of each exhaust port 830 in the X-axis direction.

As described above, it is preferable that the rectifying plates 504-506 are attached to each of the semiconductor modules 804-806. However, this is not limited to this, and it is sufficient that the rectifying plate is attached to at least one semiconductor module 800 of the semiconductor modules 804-806 included in the second group.

(Blocking plate 400)
The blocking plate 400 prevents air exhausted from the lowest semiconductor module 807 from flowing into an area below the semiconductor module 807 within the housing 2 .

As shown in Figures 5 to 7, the blocking plate 400 is installed below the semiconductor module 807. The blocking plate 400 is fixed inside the housing 2. However, this is not limited to this, and the blocking plate 400 may be installed on the bottom surface of the semiconductor module 807.

The blocking plate 400 typically has a rectangular shape. As shown in FIG. 7, the blocking plate 400 is designed so that its length (width) in the X-axis direction is the same as the length in the X-axis direction of the internal area of the housing 2.

Next, we explain the simulation results.

Figure 8 shows simulation results G8 when the power conversion device 1 is modeled and the air flow is simulated. Figure 9 shows simulation results G9 when the air flow is simulated using a model in which the straightening plates 501-506 are removed from the power conversion device 1. Figure 10 shows simulation results G10 when the air flow is simulated using a model in which the partition plates 301, 302, the straightening plates 501-506, and the blocking plate 400 are removed from the power conversion device 1.

Simulation result G9 in FIG. 9 and simulation result G10 in FIG. 10 are comparative examples. Note that in the above simulations, the semiconductor module 807, which is a bypass module, is not operating, and therefore the fan 840 of the semiconductor module 807 is not driven.

Comparing the simulation result G8 in FIG. 8 with the simulation result G10 in FIG. 10, it can be seen that in the power conversion device 1, the partition plates 301, 302, the straightening plates 501-506, and the blocking plate 400 cause the air exhausted from each exhaust port 830 of each semiconductor module 801-806 to flow toward the top surface 203 at a faster speed than in the case of FIG. 10.

In addition, when comparing the simulation result G8 in FIG. 8 with the simulation result G9 in FIG. 9, it can be seen that in the power conversion device 1, the air exhausted from each exhaust port 830 of each semiconductor module 801-806 flows toward the top surface 203 at a faster flow rate due to the straightening plates 501-506 than in the case of FIG. 9. In particular, it can be seen that the air exhausted from the exhaust ports 830 of the second group of semiconductor modules 804-806 moves more smoothly in FIG. 8 than in FIG. 9.

The simulation results G8, G9, and G10 revealed that by providing the partition plates 301 and 302, the straightening plates 501 to 506, and the blocking plate 400 inside the housing 2, it is possible to efficiently send the air exhausted from the semiconductor module to the top surface 203 of the housing 2.

The configuration and advantages of the power conversion device 1 are as follows:

(1) The power conversion device 1 includes a housing 2 having a top surface 203 and a back surface 202, with a ventilation hole 231 formed on the top surface 203, and a number of semiconductor modules 800 arranged in multiple stages within the housing 2, each of which has an air intake 820, an exhaust 830, and a fan 840, with each exhaust 830 facing the back surface 202.

Each fan 840 draws air from outside the housing 2 into the semiconductor module 800 through the air intake 820, and expels the drawn air into the housing 2 through the exhaust 830. The multiple semiconductor modules 800 include at least a semiconductor module 803 located a first predetermined step below the topmost semiconductor module 801, a semiconductor module 804 located one step below the semiconductor module 803, and a semiconductor module 806 located a second predetermined step below the semiconductor module 804.

The power conversion device 1 further includes a partition plate 301 provided on the exhaust port 830 side and separating the flow path of air exhausted by each semiconductor module 800 of the first group from semiconductor module 801 to semiconductor module 803 from the flow path of air exhausted by each semiconductor module 800 of the second group from semiconductor module 804 to semiconductor module 806, a first rectifying plate (rectifying plate 501, rectifying plate 502, or rectifying plate 503) that guides the air exhausted from the exhaust port 830 by the semiconductor modules 800 included in the first group toward the top surface 203, and a second rectifying plate (rectifying plate 504, rectifying plate 505, or rectifying plate 506) that guides the air exhausted from the exhaust port 830 by the semiconductor modules 800 included in the second group toward the top surface 203.

With this configuration, the partition plate 301 can separate the air flow path exhausted by the first group of three semiconductor modules 801-803 on the upper side from the air flow path exhausted by the second group of three semiconductor modules 804-806 on the lower side.

Furthermore, with the air flow paths separated in this manner, the first straightening plate can guide the air discharged by one semiconductor module 800 on the upper side toward the top surface 203. The second straightening plate can also guide the air discharged by one semiconductor module 800 on the lower side toward the top surface 203.

Therefore, compared to a configuration not including the first and second rectifying plates, the power conversion device 1 makes it possible to efficiently guide the air exhausted from the three semiconductor modules 800 in each group toward the top surface 203. Specifically, the power conversion device 1 makes it possible to efficiently guide the air exhausted from the semiconductor modules 801 to 803 in the first group toward the top surface 203. Furthermore, it makes it possible to efficiently guide the air exhausted from the semiconductor modules 80 4 to 80 6 in the second group toward the top surface 203.

More specifically, the power conversion device 1 allows air exhausted by the lowest semiconductor module 803 in the first group to be guided toward the top surface 203 more efficiently than a configuration that does not include the first straightening plate. Furthermore, the power conversion device 1 allows air exhausted by the lowest semiconductor module 806 in the second group to be guided toward the top surface 203 more efficiently than a configuration that does not include the second straightening plate.

(2) The multiple semiconductor modules 800 further include a semiconductor module 807 that is one level below the semiconductor module 806. The power conversion device 1 further includes a partition plate 302 that is provided on the exhaust port 830 side and separates the flow path of the air exhausted by each semiconductor module 800 of the second group from the flow path of the air exhausted by the semiconductor module 807.

With this configuration, the partition plate 302 can separate the flow path of air exhausted by the three semiconductor modules 804 to 806 in the second group on the lower stage from the flow path of air exhausted by the semiconductor module 807, which is one stage below the semiconductor module 806. Therefore, with the power conversion device 1, it is possible to more efficiently guide the air exhausted by the semiconductor module 807 toward the top surface 203, compared to a configuration that does not include the partition plate 302.

(3) The partition plate 301 has a bottom portion 311 extending in a first direction toward the rear surface 202, and a wall portion 312 extending in a second direction toward the top surface 203. The bottom portion 311 has a tip portion 311a on the wall portion 312 side, and a base end portion 311b on the opposite side to the tip portion 311a. The base end portion 311b is located between the exhaust port 830 of the semiconductor module 803 and the exhaust port 830 of the semiconductor module 804 in the vertical direction.

With this configuration, the bottom 311 and the wall 312 can separate the flow path of air exhausted by the first group of three semiconductor modules 801-803 on the upper side from the flow path of air exhausted by the second group of three semiconductor modules 804-806 on the lower side.

(4) The first direction is the horizontal direction, and the second direction is the vertical direction. With this configuration, the bottom 311 is horizontal, so that the partition plate 301 can be prevented from interfering with the first straightening plate. In addition, the depth of the housing 2 can be made narrower than when the wall portion 312 is not vertical.

(5) Partition plate 302 has bottom portion 321 extending in a first direction and wall portion 322 extending in a second direction. Bottom portion 321 has tip portion 321a on the wall portion 322 side and base end portion 321b on the opposite side to tip portion 321a. Base end portion 321b is located between exhaust port 830 of semiconductor module 806 and exhaust port 830 of semiconductor module 807 in the vertical direction. Wall portion 322 is farther away from the multiple semiconductor modules 800 than wall portion 312.

With this configuration, the bottom 321 and the wall 322 can separate the flow path of air exhausted by the second group of three semiconductor modules 804 to 806 on the lower stage from the flow path of air exhausted by semiconductor module 807, which is one stage below semiconductor module 806.

(6) The wall portion 312 is positioned higher than the bottom portion 311. The partition plate 301 further has an inclined portion 313 or a curved portion between the bottom portion 311 and the wall portion 312. With this configuration, the inclined portion 313 or the curved portion can smooth the movement of the air exhausted by the semiconductor modules 804 to 806 of the second group toward the top surface 203.

In more detail, the air exhausted by the second group of semiconductor modules 804-806 can move more smoothly toward the top surface 203 than if there were no inclined portion 313 or curved portion and the partition plate 301 were composed only of a horizontally arranged bottom portion 311 and a vertically arranged wall portion 312.

(7) The power conversion device 1 further includes a blocking plate 400 that prevents air exhausted from the lowest semiconductor module 807 of the multiple semiconductor modules 800 from flowing into an area within the housing 2 below the lowest semiconductor module 807. With this configuration, it is possible to efficiently guide the air exhausted by the semiconductor module 807 to the top surface 203.

(8) The wall portion 322 abuts against the rear surface 202. This configuration makes it possible to widen the flow path of the air exhausted by the second group of semiconductor modules 804 to 806. In addition, the partition plate 302 can be installed in a stable state.

(9) The wall portion 312 extends up to the position of the uppermost semiconductor module 801. With this configuration, air exhausted by the first group of semiconductor modules 801 to 803 on the upper side is less likely to flow into the flow path of air exhausted by the three semiconductor modules 804 to 806 in the second group on the lower side.

(10) A first rectifying plate (rectifying plates 501 to 503) is attached to a position corresponding to the exhaust port 830 of each semiconductor module 800 included in the first group. A second rectifying plate (rectifying plates 504 to 506) is attached to a position corresponding to the exhaust port 830 of each semiconductor module 800 included in the second group.

With this configuration, the first straightening plates can guide the air discharged by each of the semiconductor modules 801 to 803 on the upper side toward the top surface 203. Also, the second straightening plates can guide the air discharged by each of the semiconductor modules 804 to 806 on the lower side toward the top surface 203.

Therefore, compared to a configuration in which the air straightening plates are attached to only some of the multiple semiconductor modules, it is possible to efficiently guide the air exhausted by each semiconductor module 800 in the housing 2 toward the top surface 203.

(11) Each of the first and second rectifying plates extends upward from the lower portion of the exhaust port 830 toward the rear surface 202 of the housing 2. According to this configuration, each of the first and second rectifying plates can guide the air exhausted by each of the semiconductor modules 800 toward the top surface 203.

(12) Of the multiple semiconductor modules 800, the semiconductor modules 801 to 806 are uninterruptible power supply modules, except for the bottommost semiconductor module 807. The bottommost semiconductor module 807 is a bypass module.

The uninterruptible power supply modules are normally in operation all the time. On the other hand, the bypass modules are not in operation all the time. Therefore, with this configuration, the air exhausted from each uninterruptible power supply module can be guided to the top surface 203 more efficiently than with a configuration in which the bypass module is placed on the upper stage.

(13) The housing 2 further has side surfaces 205, 206 connected to the top surface 203 and the back surface 202. The bottom 311 and the side surfaces 205, 206 are spaced apart in a third direction perpendicular to each of the first direction and the second direction. The bottom 321 and the side surfaces 205, 206 are spaced apart in the third direction. This configuration makes it easy to install wiring for the semiconductor module 800.

(14) The ventilation opening 231 is provided with a fan 600 that exhausts the air inside the housing 2 to the outside. With this configuration, the air inside the housing 2 can be exhausted to the outside more quickly than in a configuration in which the fan 600 is not provided.

(15) The first specified stage and the second specified stage are the same (in this example, three stages).

The embodiments disclosed herein are illustrative and are not limited to the above. The scope of the present invention is defined by the claims, and is intended to include all modifications within the scope and meaning equivalent to the claims.

1 Power conversion device, 2,810 Housing, 201,811 Front, 202,812 Rear, 203 Top, 204 Bottom, 205,206,317,318,327,328 Side, 231 Ventilation hole, 251,252 Support, 301,302 Partition plate, 311,321 Bottom, 311a,321a Tip, 311b,321b Base, 312,322 Wall, 313,323 Inclined portion, 315,325 Upper end, 316,326 Lower end, 400 Cover plate, 501,502,503,504,505,506 Straightening plate, 600,840 Fan, 800, 801, 802, 803, 804, 805, 806, 807 Semiconductor module, 820 Air intake, 830 Exhaust, 850 Terminal block, 851 Communication module.

Claims (11)

A housing having a top surface and a back surface, the top surface being formed with a ventilation hole;
a plurality of semiconductor modules each having an air intake port, an exhaust port, and a first fan, the semiconductor modules being arranged in multiple stages within the housing such that each of the exhaust ports faces the rear surface;
each of the first fans draws air from outside the housing into the semiconductor module through the air intake port and exhausts the drawn air into the housing through the exhaust port;
the plurality of semiconductor modules include at least a first semiconductor module located a first predetermined step below a topmost semiconductor module, a second semiconductor module located one step below the first semiconductor module, and a third semiconductor module located a second predetermined step below the second semiconductor module;
a first partition plate that is provided on the exhaust port side and separates a flow path of air exhausted by each of the semiconductor modules in a first group from the uppermost semiconductor module to the first semiconductor module from a flow path of air exhausted by each of the semiconductor modules in a second group from the second semiconductor module to the third semiconductor module;
a first straightening plate that guides air discharged from the exhaust port by one of the semiconductor modules included in the first group toward the top surface;
a second straightening plate that guides air discharged from the exhaust port by one of the semiconductor modules included in the second group toward the top surface,
the plurality of semiconductor modules further includes a fourth semiconductor module in a stage one level below the third semiconductor module;
a second partition plate that is provided on the exhaust port side and separates a flow path of air exhausted by each of the semiconductor modules of the second group from a flow path of air exhausted by the fourth semiconductor module,
the first partition plate has a first bottom portion extending in a first direction toward the back surface and a first wall portion extending in a second direction toward the top surface,
the first bottom portion has a first tip portion on the first wall portion side and a first base end portion opposite the first tip portion,
the first base end is located between an exhaust port of the first semiconductor module and an exhaust port of the second semiconductor module in a vertical direction;
the second partition plate has a second bottom portion extending in the first direction and a second wall portion extending in the second direction,
the second bottom portion has a second tip portion on the second wall portion side and a second base end portion opposite the second tip portion,
the second base end is located between an exhaust port of the third semiconductor module and an exhaust port of the fourth semiconductor module in the vertical direction,
the second wall portion is farther from the semiconductor modules than the first wall portion;
a lowermost semiconductor module of the plurality of semiconductor modules is the fourth semiconductor module,
The second wall portion abuts against the rear surface . A housing having a top surface and a back surface, the top surface being formed with a ventilation hole;
a plurality of semiconductor modules each having an air intake port, an exhaust port, and a first fan, the semiconductor modules being arranged in multiple stages within the housing such that each of the exhaust ports faces the rear surface;
each of the first fans draws air from outside the housing into the semiconductor module through the air intake port and exhausts the drawn air into the housing through the exhaust port;
the plurality of semiconductor modules include at least a first semiconductor module located a first predetermined step below a topmost semiconductor module, a second semiconductor module located one step below the first semiconductor module, and a third semiconductor module located a second predetermined step below the second semiconductor module;
a first partition plate that is provided on the exhaust port side and separates a flow path of air exhausted by each of the semiconductor modules in a first group from the uppermost semiconductor module to the first semiconductor module from a flow path of air exhausted by each of the semiconductor modules in a second group from the second semiconductor module to the third semiconductor module;
a first straightening plate that guides air discharged from the exhaust port by one of the semiconductor modules included in the first group toward the top surface;
a second straightening plate that guides air discharged from the exhaust port by one of the semiconductor modules included in the second group toward the top surface,
the plurality of semiconductor modules further includes a fourth semiconductor module in a stage one level below the third semiconductor module;
a second partition plate that is provided on the exhaust port side and separates a flow path of air exhausted by each of the semiconductor modules of the second group from a flow path of air exhausted by the fourth semiconductor module,
the first partition plate has a first bottom portion extending in a first direction toward the back surface and a first wall portion extending in a second direction toward the top surface,
the first bottom portion has a first tip portion on the first wall portion side and a first base end portion opposite the first tip portion,
the first base end is located between an exhaust port of the first semiconductor module and an exhaust port of the second semiconductor module in a vertical direction;
the second partition plate has a second bottom portion extending in the first direction and a second wall portion extending in the second direction,
the second bottom portion has a second tip portion on the second wall portion side and a second base end portion opposite the second tip portion,
the second base end is located between an exhaust port of the third semiconductor module and an exhaust port of the fourth semiconductor module in the vertical direction,
the second wall portion is farther from the semiconductor modules than the first wall portion ;
The housing further has a side surface connected to the top surface and the back surface,
the first bottom and the side surface are spaced apart in a third direction perpendicular to each of the first direction and the second direction;
The second bottom and the side surface are spaced apart in the third direction . the first direction is a horizontal direction;
The power conversion device according to claim 1 , wherein the second direction is the vertical direction. The first wall portion is higher than the first bottom portion,
The power conversion device according to claim 1 , wherein the first partition plate further has an inclined portion or a curved portion between the first bottom portion and the first wall portion. 2. The power conversion device according to claim 1, further comprising a blocking plate that prevents air exhausted from the fourth semiconductor module from flowing into a region within the housing that is below the fourth semiconductor module .
The power conversion device according to claim 1 , wherein the first wall portion extends to a position of the uppermost semiconductor module. the first current plate is attached to a position corresponding to the exhaust port of each of the semiconductor modules included in the first group,
3 . The power conversion device according to claim 1 , wherein the second current plates are attached to positions corresponding to the exhaust ports of the semiconductor modules included in the second group. The power conversion device according to claim 7 , wherein each of the first rectifying plates and each of the second rectifying plates extend upward from a lower portion of the exhaust port toward a rear surface of the housing. each of the semiconductor modules other than the fourth semiconductor module among the plurality of semiconductor modules is an uninterruptible power supply module;
The power conversion device according to claim 1 , wherein the lowermost semiconductor module is a bypass module. The power conversion device according to claim 1 , wherein the ventilation opening is provided with a second fan that exhausts air from within the housing to the outside. The power conversion device according to claim 1 , wherein the first predetermined stage and the second predetermined stage are the same.

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