JP7589073B2 - SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - Google Patents

Description

This disclosure relates to a substrate processing apparatus and a substrate processing method.

As an apparatus for manufacturing semiconductor devices, a batch-type liquid processing apparatus that performs liquid processing on multiple substrates simultaneously is known. The batch-type liquid processing apparatus described in Patent Document 1 has a rotor, which is a holding means for storing wafers W, a slidable processing chamber that stores the rotor, and a processing liquid supply nozzle that is disposed in the processing chamber and supplies a predetermined processing liquid to the wafers held by the rotor. A carrier containing a wafer placed on a mounting table of an in/out port is transported to a carrier relay section by a first carrier transport mechanism, and from there is carried into a wafer transfer section by a second carrier transport mechanism, from which the wafer transfer mechanism lifts the wafer from the carrier and transfers it to the rotor. The processing chamber then slides horizontally to store the rotor. In this state, the wafer is subjected to liquid processing.

JP 2002-151461 A

This disclosure provides technology that can improve throughput (number of substrates processed per unit time) per footprint area in a substrate processing system equipped with multiple liquid processing units.

According to one embodiment of the present disclosure, there is provided a substrate processing system including a plurality of batch-type liquid processing units, each of which has a substrate holding section for holding a plurality of substrates parallel to each other and is configured to simultaneously perform liquid processing on the plurality of substrates held by the substrate holding section, a container mounting section for mounting a substrate transport container for storing a plurality of substrates, at least one substrate transfer section having a substrate holding structure for holding a plurality of substrates parallel to each other, a first substrate transfer device for transferring substrates between the substrate transport container mounted on the container mounting section and the substrate transfer section, and a second substrate transfer device for transferring a plurality of substrates simultaneously between the substrate transfer section and the liquid processing units, the substrate processing system having at least two stories at different heights, two or more of the plurality of liquid processing units being arranged on each story, and at least one of the plurality of liquid processing units being arranged above or below the substrate transfer section.

According to the above-described embodiment of the present disclosure, in a substrate processing system equipped with multiple liquid processing units, the throughput per footprint area (number of substrates processed per unit time) can be improved.

1 is a schematic vertical sectional side view of a liquid processing unit according to an embodiment of the substrate processing apparatus; 2 is a perspective view showing a configuration of a rotor and an operation mechanism of the liquid processing unit shown in FIG. 1 . FIG. 3 is a side view of the rotor shown in FIG. 2 . 2 is a diagram showing a processing fluid nozzle provided in a processing container of the liquid processing unit shown in FIG. 1 . FIG. 13 is a schematic diagram illustrating another embodiment of the liquid treatment unit. 11A to 11C are operational diagrams illustrating the change in attitude of the rotor, the delivery of the substrate to the rotor, and the movement of the processing vessel. FIG. 13 is a schematic diagram illustrating another embodiment of the liquid treatment unit. 13 is a schematic diagram illustrating yet another embodiment of the liquid processing unit. FIG. FIG. 11 is a piping diagram showing another example of the configuration of the treatment fluid supply mechanism. FIG. 12 is a diagram showing the configuration of one embodiment of a substrate processing system having a plurality of liquid processing units, illustrating the planar arrangement of a first floor of processing blocks (corresponding to the X-X cross section in FIG. 11). 11 is a cross-sectional view of the substrate processing system shown in FIG. 10 taken along the line XI-XI in FIG. 10. 12 is a cross-sectional view of the substrate processing system shown in FIG. 10 along XII-XII in FIG. 11 . 13 is a cross-sectional view of the substrate processing system shown in FIG. 10 along XIII-XIII in FIG. 10 . 14 is a cross-sectional view of the substrate processing system shown in FIG. 10 along the line XIV-XIV in FIG. 11. 13 is a front view of one configuration example of a substrate transfer section provided in the substrate processing system shown in FIG. 10, as seen in the direction of arrow XV in FIG. 12. 16 is a side view of the substrate transfer section shown in FIG. 15 as viewed in the direction of arrow XVI. 11 is a side view showing a first configuration example of a second substrate transport robot provided in the substrate processing system shown in FIG. 10. 11 is a side view showing a second configuration example of a second substrate transport robot provided in the substrate processing system shown in FIG. 10. 11 is a side view showing a third configuration example of a second substrate transport robot provided in the substrate processing system shown in FIG. 10.

A batch-type liquid processing unit 10 as one embodiment of a substrate processing apparatus will be described with reference to the attached drawings. The substrate W to be processed by the liquid processing unit 10 is, for example, a semiconductor wafer, but is not limited thereto, and may be any type of substrate used in the manufacture of semiconductor devices, such as a glass substrate, a ceramic substrate, etc.

The liquid processing unit 10 has a rotor (substrate holding portion) 18 that holds multiple (e.g., 25) substrates W in a vertical position, arranged horizontally at an equal pitch (also called the "second equal pitch P2"). The second equal pitch P2 can be an appropriate value within the range of 1 to 10 mm, for example, 5 mm or 10 mm. In this specification, the term "first equal pitch P1" is also used, but this will be described later. In this specification, the number of substrates W held simultaneously by the rotor 18 when the substrates W are subjected to liquid processing by the liquid processing unit 10 is also called the "specified processing number".

A rotation shaft 21 extends horizontally from a first side wall of the rotor 18 (corresponding to the first disk 181A shown in FIG. 2). The rotation shaft 21 is driven to rotate by a rotation drive unit 24 about a rotation axis Ax extending horizontally (left-right direction in FIG. 1), thereby rotating the rotor 18 and the substrates W held thereon about the rotation axis Ax. This rotation axis Ax passes through the center of each substrate W held by the rotor 18. Hereinafter, in the description of the liquid processing unit 10 in this specification, unless otherwise specified, the direction parallel to the rotation axis Ax will also be referred to as the "axial direction".

For ease of explanation, in this specification, an XYZ Cartesian coordinate system is set up, and directions are sometimes explained based on this. In FIG. 1, the axis of rotation Ax extends horizontally, and this direction (axial direction) is also referred to as the "X direction." In addition, another horizontal direction perpendicular to the X direction (the direction perpendicular to the paper surface of FIG. 1) is referred to as the "Y direction," and the vertical direction perpendicular to the X direction is referred to as the "Z direction."

In the illustrated embodiment, the rotary drive unit 24 is an electric rotary motor (hereinafter, for simplicity, simply referred to as "motor 24"), and the rotary shaft of the motor 24 is directly connected to the rotary shaft 21 of the rotor 18. In an alternative embodiment, the rotary drive unit 24 can be configured as a combination of the motor 24 and a driving force transmission means (e.g., a belt/pulley) (not shown) that transmits driving force from the motor 24 to the rotary shaft 21.

The liquid processing unit 10 has a movable processing vessel 11 that can surround the rotor 18. The processing vessel 11 can be generally cylindrical overall, and the central axis of the processing vessel 11 can be concentric with the rotation axis Ax of the rotor 18. Both ends of the processing vessel 11 in the axial direction (X direction) are open. In other words, the processing vessel 11 has a first opening 11A at the first end and a second opening 11B at the second end.

The processing vessel 11 can be moved in the X direction by the horizontal movement mechanism 12 between a first position (position shown by solid lines (closed position)) in which the rotor 18 is enclosed, and a second position (position shown by dashed lines (open position)) in which the rotor 18 is exposed without being enclosed. Please also refer to FIG. 6(D) which shows the processing vessel 11 in the first position, and FIG. 6(C) which shows the processing vessel 11 in the second position.

The horizontal movement mechanism 12 can be composed of a suitable linear actuator, for example, an air cylinder. A guide rail (not shown) may be provided to guide the processing vessel 11 in the X direction.

The relative positional relationship between the processing vessel 11 and the rotor 18 when the processing vessel 11 is in the first position is also referred to as the first positional relationship, and the relative positional relationship between the processing vessel 11 and the rotor 18 when the processing vessel 11 is in the second position is also referred to as the second positional relationship. This notation of the positional relationship also applies when the rotor 18 is movable in the X direction and the processing vessel 11 is stationary in the X direction.

The liquid processing unit 10 has a first blocking structure 15A and a second blocking structure 15B. When the processing vessel 11 is in the first position shown in FIG. 1, the first blocking structure 15A blocks the first opening 11A of the processing vessel 11, and the second blocking structure 15B blocks the second opening 11B of the processing vessel 11.

The first obstruction structure 15A has two disk-shaped plates, a first plate 151 and a second plate 152, spaced apart in the axial direction of the rotor 18. The first plate 151 and the second plate 152 are firmly connected via multiple connecting members 153 (or spacers) and are relatively immobile.

The second plate 152 of the first blocking structure 15A is firmly connected to the motor 24 via a fixing member 154. The fixing member 154 is firmly fixed to a frame (not shown) of the liquid processing unit 10 or the substrate processing system 1, or is firmly fixed to an arm 155 of a posture change mechanism shown in FIG. 1. In the former case, the rotor 18 is always in a horizontal posture and the posture cannot be changed. In the latter case, the posture of the rotor 18 can be changed by rotating the arm 155 to move (rotate) the assembly (hereinafter, for ease of description, also referred to as "assembly AS") that connects the rotor 18, the first blocking structure 15A, the rotating shaft 21, the motor 24, and the fixing member 154 as a whole.

The rotating shaft 21 passes through the first plate 151 and the second plate 152. The first plate 151 is formed with a through hole 151H having an inner diameter larger than the outer diameter of the rotating shaft 21. The portion of the second plate 152 through which the rotating shaft 21 passes is sealed by an appropriate sealing member or sealing structure, such as a labyrinth seal 25.

The second blocking structure 15B can be a single generally cylindrical member having a cylindrical outer periphery substantially concentric with the processing vessel 11. The X-direction length of the second blocking structure 15B is approximately equal to or longer than the X-direction movement distance of the processing vessel 11 (i.e., the distance between the first position and the second position of the processing vessel 11).

The processing vessel 11 has a processing vessel body 11M having a cylindrical shape with the rotation axis Ax as the central axis, a first ring-shaped protrusion 111 and a second ring-shaped protrusion 112 protruding radially inward from the inner peripheral surface of the processing vessel body 11M at the first opening 11A, and a third ring-shaped protrusion 113 and a fourth ring-shaped protrusion 114 protruding radially inward from the inner peripheral surface of the processing vessel body 11M at the second opening 11B.

When the processing vessel 11 is in the first position (position shown in FIG. 1), the axial positions (X-direction positions) of the first ring-shaped protrusion 111 and the second ring-shaped protrusion 112 coincide with the axial positions of the first plate 151 and the second plate 152, respectively. A seal member 16 is attached to the inner peripheral surfaces of the first ring-shaped protrusion 111 and the second ring-shaped protrusion 112. The seal member 16 seals between the first ring-shaped protrusion 111 and the first plate 151, and between the second ring-shaped protrusion 112 and the second plate 152.

When the processing vessel 11 is in the first position, the third ring-shaped protrusion 113 and the fourth ring-shaped protrusion 114 face the outer circumferential surface of the second blocking structure 15B. A seal member 16 is attached to the inner circumferential surfaces of the third ring-shaped protrusion 113 and the fourth ring-shaped protrusion 114, and this seal member 16 seals between the third ring-shaped protrusion 113 and the fourth ring-shaped protrusion 114 and the second blocking structure 15B.

The above four sealing members 16 can be supplied with pressurized fluid (e.g., pressurized air) from a pressurized fluid source (not shown) via a pressurized fluid line (not shown). When pressurized fluid is supplied, the sealing members 16 expand to perform a sealing function. By supplying pressurized fluid to the sealing members 16 with the processing vessel 11 positioned in the first position, the processing vessel 11 and the first and second blocking structures 15A and 15B are hermetically engaged to form a processing chamber 11C, which is a substantially closed space that houses the rotor 18.

When the processing chamber 11C is formed, a first sub-chamber 11S1 is formed, surrounded by the end of the first end side of the processing vessel body 11M, the first ring-shaped protrusion 111, the second ring-shaped protrusion 112, the first plate 151, and the second plate 152. The first sub-chamber 11S1 is adjacent to the processing chamber 11C, separated by the first plate 151 and the first ring-shaped protrusion 111.

When the processing chamber 11C is formed, a second sub-chamber 11S2 is also formed, surrounded by the end of the second end side of the processing vessel body 12M, the third ring-shaped protrusion 113, the fourth ring-shaped protrusion 114, and the outer peripheral surface of the second blocking structure 15B. The second sub-chamber 11S2 is adjacent to the processing chamber 11C, separated by the third ring-shaped protrusion 113.

When pressurized fluid is not being supplied to the sealing member 16 (or when fluid is discharged from the sealing member 16), the sealing member 16 contracts and does not impede relative movement of the processing vessel 11 in the X direction with respect to the first blocking structure 15A and the second blocking structure 15B.

The first plate 151 is provided with a communication passage (liquid communication passage), and when the liquid level of the processing liquid stored in the processing chamber 11C exceeds the height of the communication passage, the processing liquid can overflow (flow) from the processing chamber 11C into the first sub-chamber 11S1. This communication passage can be the through hole 151H (the hole through which the rotating shaft 21 passes) of the first plate 151 described above.

Alternatively, one or more through holes (not shown) may be provided as communication passages that penetrate the first plate 151 in the X direction at a different height position from the through hole 151H. If it is desired to make the level of the processing liquid in the processing chamber 11C higher than the rotation shaft 21, a labyrinth seal can be provided at the through hole 151H of the first plate 151, as with the second plate 152, and a through hole as a communication passage can be provided in the first plate 151 at a position higher than the rotation shaft 21. The height and size (opening area) of the communication passage can be determined according to the desired level of the processing liquid in the processing chamber 11C during processing of the substrate W.

It is difficult to achieve complete sealing using the above-mentioned type of sealing member 16, and some liquid may leak from the processing chamber 11C into the first subchamber 11S1 and the second subchamber 11S2 through the small gap between the sealing member 16 and the member in contact with it. The second subchamber 11S2 also serves to collect any leaked liquid.

By supplying pressurized fluid to the seal member 16 with the processing vessel 11 positioned in the second position (shown by the dashed line), the space between the inner circumferential surface of the processing vessel body 11M and the outer circumferential surface of the second blocking structure 15B is partitioned into a first space 11S3 between the first ring-shaped protrusion 111 and the second ring-shaped protrusion 112, a second space 11S4 between the first ring-shaped protrusion 111 and the third ring-shaped protrusion 113, and a third space 11S5 between the third ring-shaped protrusion 113 and the fourth ring-shaped protrusion 114.

Next, we will explain how to supply the processing fluid to the processing vessel 11.

A chemical nozzle 28 is provided at the bottom of the processing vessel 11 (the bottom in the illustrated example) to supply a chemical solution as a processing liquid into the processing chamber 11C. Specific examples of the chemical solution will be described later. The chemical nozzle 28 may be composed of one or more holes provided in the bottom of the processing vessel 11, or may be composed of a nozzle body having one or more outlets provided near the bottom of the processing chamber 11C.

The bottom of the portion of the processing vessel 11 corresponding to the first sub-chamber 11S1 and the second sub-chamber 11S2 is provided with circulation drainage ports 131, 132 for discharging the liquid in the first sub-chamber 11S1 and the second sub-chamber 11S2, and waste drainage ports 133, 134. The bottom of the portion of the processing vessel 11 corresponding to the processing chamber 11C is also provided with a waste drainage port 135 for discharging the liquid in the processing chamber 11C.

A drainage line 136 with an on-off valve V4 is connected to the waste drainage ports 133, 134, and 135. The drainage line 136 is connected to a drain (DR) provided in the semiconductor device manufacturing factory. Note that the term "for waste" in the waste drainage port is used to distinguish it from "for circulation," and the liquid discharged from the waste drainage ports 133, 134, and 135 to the drainage line 136 may be collected in a collection tank (not shown) and reused.

A chemical circulation mechanism (chemical supply mechanism) 50 is connected to the processing vessel 11. The chemical circulation mechanism 50 has a tank 51 for storing the chemical, an upstream circulation line 52 that runs from the tank 51 to the chemical nozzle 28, and a downstream circulation line 53 that runs from the circulation drainage ports 131, 132 back to the tank 51. A pump 54, a heater 55, and a filter 56 are sequentially interposed in the upstream circulation line 52 from the upstream side. The processing vessel 11 and the chemical circulation mechanism 50 form a chemical circulation system, and the chemical circulates through this chemical circulation system.

The above-mentioned circulation flow of the chemical liquid continues throughout the time that the substrate W is being processed in the processing chamber 11C using the chemical liquid. In the following description, for the sake of simplicity, the circulation of the chemical liquid through the chemical liquid circulation system as described above will also be referred to as "normal circulation", and the path through which the chemical liquid flows at this time will also be referred to as the "normal circulation path".

The chemical liquid flowing out of the tank 51 by driving the pump 54 is temperature-adjusted by the heater 55, passes through the filter 56 where particles are removed, and then flows into the processing chamber 11C from the chemical liquid nozzle 28, where it is used for chemical processing of the substrate W. The chemical liquid flowing into the first sub-chamber 11S1 from the processing chamber 11C through the aforementioned communication passage (for example, the through hole 151H of the first plate 151) flows out into the downstream circulation line 53 through the circulation drain port 131 and is returned to the tank 51. Also, as described above, a small amount of processing liquid leaks from the processing chamber 11C into the first sub-chamber 11S1 and the second sub-chamber 11S2 through the seal member 16. This leaked processing liquid also flows out into the downstream circulation line 53 through the circulation drain ports 131 and 132, and is returned to the tank 51.

A bypass line 57 can be provided that directly connects the upstream circulation line 52 (downstream of the filter 56 on the upstream circulation line 52) and the downstream circulation line 53. By opening the on-off valve V1 on the bypass line 57 and closing the on-off valve V2 on the upstream circulation line 52 and the on-off valve V3 on the downstream circulation line 53, the chemical solution can be circulated and its temperature adjusted without passing through the treatment chamber 11C, the first sub-chamber 11S1, and the second sub-chamber 11S2.

When the substrate W is not being processed in the processing chamber 11C using the chemical liquid, the chemical liquid can be circulated and its temperature adjusted via the bypass line 57 as described above, allowing the chemical liquid processing step to be started quickly and smoothly. In the following description, for the sake of simplicity, the circulation of the chemical liquid through the bypass line 57 as described above will also be referred to as "standby circulation", and the path through which the chemical liquid flows at this time will also be referred to as the "standby circulation path".

At least one processing fluid nozzle 30 is provided at the top of the processing vessel 11 to supply processing fluid into the processing chamber 11C.

In one embodiment, the at least one processing fluid nozzle 30 may include a rinse nozzle 31 that supplies a rinsing liquid toward the substrate W, a drying fluid nozzle 32 that ejects a drying fluid toward the substrate W, and a gas nozzle 33 that ejects an inert gas (e.g., nitrogen gas) or a low-oxygen gas (gas with a low oxygen content) toward the substrate W or the space surrounding the substrate W. The number of processing fluid nozzles 30 may be determined according to the type of processing fluid supplied to the substrate W as described above. Multiple types of processing fluid (e.g., rinsing liquid and nitrogen gas) may be supplied from the same processing fluid nozzle 30.

Examples of the rinse liquid include pure water (DIW) and functional water. Examples of functional water include pure water with a small amount of electrolyte dissolved therein to give the rinse liquid electrical conductivity, specifically carbonated water and dilute ammonia water.

The drying fluid is intended to prevent the pattern from collapsing due to surface tension when drying the substrate W. The drying fluid can be supplied in the form of a mist (liquid) or vapor. An example of the drying fluid is an organic solvent that has a lower surface tension and is more volatile than the rinsing liquid, such as IPA (isopropyl alcohol). By replacing the rinsing liquid, such as DIW, in the pattern recesses with IPA and then drying, it is possible to prevent or at least significantly suppress the collapse of the pattern.

The drying fluid may be a mixture of the organic solvent described above and a hydrophobizing agent. Examples of the hydrophobizing agent include silylating agents or silane coupling agents, specifically trimethoxyphenylsilane, tetraethoxysilane, 3-glycidoxypropyltrimethoxysilane, TMSDMA (trimethylsilyldimethylamine), DMSDMA (dimethylsilyldimethylamine), TMSDEA (trimethylsilyldiethylamine), TMADMA (tetramethylaminedimethylamine), HMDS (hexamethyldisilazane), and TMDS (1,1,3,3-tetramethyldisilazane). The hydrophobizing agent hydrophobizes the surface of the pattern recesses, thereby reducing the force that causes the pattern to collapse due to surface tension, and thus the collapse of the pattern can be further suppressed. This technique of modifying the surface (hydrophobizing) and drying is also called SMD (Surface Molecular Dry).

As shown diagrammatically in FIG. 4, the processing fluid nozzle 30 may be a rod-shaped nozzle extending along the arrangement direction (horizontal direction) of the substrates W directly or nearly directly above the row of substrates W held by the rotor 18. The rod-shaped nozzle may be constructed, for example, by forming multiple outlets 35 in a hollow cylinder 34 having a fluid passage therein extending horizontally. Such a rod-shaped nozzle may have the same number of outlets 35 as the number of substrates W held by the rotor 18, and preferably one more.

As described above, the processing fluid nozzle 30 is preferably provided directly or nearly directly above the row of substrates W held by the rotor 18, but may be provided at any position higher than the liquid level of the processing liquid (chemical liquid) in the processing chamber 11C.

As shown in FIG. 4, the discharge ports 35 can be provided at the same pitch as the second equal pitch P2 (X-direction spacing), which is the arrangement pitch of the substrates W held by the rotor 18. The discharge ports 35 can be provided at positions (excluding the discharge ports at both ends) facing the spaces between adjacent substrates W held by the rotor 18. It is preferable that the processing fluid is discharged from each discharge port 35 under the same conditions (discharge flow rate, discharge angle). Each discharge port 35 can be formed so that the processing fluid is discharged therefrom in a fan or cone shape (i.e., diverging). This allows the processing fluid to be supplied evenly to the surface of the substrate W held and rotated by the rotor 18.

In this specification, the term "surface of the substrate W" refers to both the front surface on which devices are formed and the back surface on which devices are not formed, unless otherwise specified.

The treatment fluid is supplied to each treatment fluid nozzle 30 via a treatment fluid supply mechanism. As is widely known in the art, the treatment fluid supply mechanism can be composed of a treatment fluid supply source such as a tank or factory utility, a supply line that supplies the treatment fluid from the treatment fluid supply source to the treatment fluid nozzle 30, and flow rate adjustment devices such as a flow meter, an on-off valve, and a flow control valve, as well as auxiliary devices such as a filter and a heater, provided on the supply line. In this embodiment, since the treatment container 11 moves in the X direction, at least a part of the supply line may be formed of a flexible tube so as to be able to follow this movement.

In the illustrated embodiment, the processing fluid supply mechanisms include a rinse liquid supply mechanism 31S that supplies rinse liquid to the rinse nozzle 31, a drying fluid supply mechanism 32S that supplies drying fluid to the drying fluid nozzle 32, and a gas supply mechanism 33S that supplies gas (inert gas or low-oxygen gas) to the gas nozzle 33.

The rinse liquid can also be used to clean the processing chamber 11C, so the rinse nozzle 31 is preferably configured to eject the rinse liquid so that it strikes not only the substrate W held by the rotor 18, but also the inner wall surface of the processing vessel 11 facing the processing chamber 11C, the side surface of the rotor 18 (disks 181A and 181B described later), and the surface of the rotating shaft 21. However, if the rinse liquid scattered from the rotating rotor 18 (or the substrate W held by the rotor 18) strikes the disks 181A and 181B of the rotor 18, and the surfaces of the rotating shaft 21 and the second rotating shaft 22, the rinse nozzle 31 may be configured to eject the rinse liquid only toward the substrate W held by the rotor 18.

Exhaust ports 141, 142 are provided in the ceilings of the first and second subchambers 11S1 and 11S2, respectively, for discharging the atmosphere (gas) in the first and second subchambers 11S1 and 11S2. Exhaust ports 141, 142 are each connected to an exhaust line 143. The exhaust line 143 is connected to a gas-liquid separator (also called an exhaust box, etc.) (not shown) that separates the liquid (mist) contained in the exhaust gas. The liquid separated by the gas-liquid separator is connected to a drainage pipe (not shown) in the semiconductor manufacturing factory, and the gas is connected to an exhaust duct (not shown) in the semiconductor manufacturing factory.

The exhaust duct has a reduced pressure atmosphere, which causes the first subchamber 11S1 and the second subchamber 11S2 to be sucked in (reduced pressure). The exhaust line 143 may be provided with a suction device such as an ejector or a vacuum pump to promote exhaust. A flow rate control valve such as a butterfly valve may be provided in the exhaust line 143 to adjust the suction force acting on the first subchamber 11S1 and the second subchamber 11S2.

Ventilation paths (gas communication paths) 127, 128 are provided on the upper portions of the first ring-shaped protrusion 111 and the third ring-shaped protrusion 113. The height positions of the ventilation paths (gas communication paths) 127, 128 may be any height position above the set liquid level height of the processing liquid. Since the first subchamber 11S1 and the second subchamber 11S2 are suctioned as described above, the atmosphere in the processing chamber 11C flows through the ventilation paths 127, 128 to the first subchamber 11S1 and the second subchamber 11S2, and is exhausted through the exhaust ports 141, 142 and the exhaust line 143. Therefore, the pressure in the processing chamber 11C becomes slightly higher than the pressure in the first subchamber 11S1 and the second subchamber 11S2.

The cross-sectional shape of the ventilation passages 127, 128 may be a mountain shape with a higher center so that liquid does not remain inside the ventilation passages 127, 128.

The portions of the ceiling of the processing vessel 11 corresponding to the first sub-chamber 11S1 and the second sub-chamber 11S2 are provided with cleaning liquid nozzles 37, 38 that supply cleaning liquid to clean the first sub-chamber 11S1 and the second sub-chamber 11S2. The cleaning liquid nozzles 37, 38 are supplied with cleaning liquid from a cleaning liquid supply source through a supply line in which a flow rate control device or the like is interposed. A rinse liquid (e.g., DIW) may be supplied to the cleaning liquid nozzles 37, 38 by a rinse liquid supply mechanism 31S that supplies rinse liquid to the rinse nozzle 31. The cleaning liquid nozzles 37, 38 are preferably configured to spray cleaning liquid so that all the wall surfaces facing the first sub-chamber 11S1 and the second sub-chamber 11S2 and the surface of the rotating shaft 21 can be cleaned.

To regulate the temperature of the processing liquid in the processing chamber 11C of the processing vessel 11, a heater 129 is provided in the portion of the processing vessel 11 corresponding to the processing chamber 11C, particularly in the bottom portion. The heater 129 may be embedded in the wall of the processing vessel 11 or may be attached to the outer surface of the processing vessel 11.

[Rotor structure]
2 and 3, the structure of the rotor 18, which is shown only diagrammatically in FIG. 1, will now be described in detail.

The rotor 18 has a pair of disks 181A (first side of the rotor 18) and 181B (second side of the rotor 18), one or more (e.g., three or four) fixed holding bars 182 extending horizontally between the disks 181A and 181B, and a pair of movable holding bars 183. The rotating shaft 21 is fixed to the disk 181A. Each of the fixed holding bar 182 and the movable holding bar 183 is provided with substrate holding grooves (details not shown) that are arranged at equal intervals in the horizontal direction with the same arrangement pitch as the second equal pitch P2 described above. The peripheral portion of the substrate W held by the rotor 18 is accommodated in each substrate holding groove.

The movable holding rod 183 is attached to a rotating shaft 185 rotatably mounted on the disks 181A and 181B via a pivoting arm 184, and can pivot between a holding position for holding the substrate W and a release position for releasing the substrate W.

A weight 186 fixed to the rotating shaft 185 is provided on the outer surface of the disk 181B. The weight 186 is provided so that when the rotor 18 is rotating, the centrifugal force acting on the assembly consisting of the movable holding rod 183, the pivot arm 184, the rotating shaft 185, and the weight 186 presses the movable holding rod 183 against the substrate W. However, to prevent damage to the substrate W during high speed rotation of the rotor 18, which generates a large centrifugal force, a fixed stopper 187 is provided on the disk 181B to limit the displacement of the movable holding rod 183.

A spring stopper 188 made of a leaf spring is attached to the outer surface of the disk 181B to maintain the movable holding rod 183 in the holding position. An operating groove 189, similar to that formed in the head of a flathead screw, is formed on the shaft end of the rotating shaft 185 or on the surface of the weight 186 corresponding to that shaft end.

The liquid processing unit 10 has an operating mechanism 19. The operating mechanism 19 has a pressing mechanism 191 having a push rod that presses the spring stopper 188, and a rotating mechanism 192 that engages with the groove 189 to rotate the rotating shaft 185 and thereby rotate the movable holding rod 183. If necessary, an advancing/retreating mechanism 193 may be provided that moves the pressing mechanism 191 and the rotating mechanism 192 forward and backward toward the rotor 18. Note that in reality, two sets of pressing mechanisms 191 and rotating mechanisms 192 are provided, but only one set is shown in FIG. 2.

The push rod of the pressing mechanism 191 presses the spring stopper 188 towards the disk 181B, allowing the weight 186 to rotate without being hindered by the spring stopper 188. In this state, the tip 192b of the rotating shaft 192a of the rotating mechanism 192 is engaged with the groove 189 to rotate the rotating shaft 185, thereby moving the movable holding rod 183 between the holding position and the release position described above. The tip 192b has a shape similar to that of a driver bit for flat-head screws, for example.

By retracting the push rod of the pressing mechanism 191 while the movable holding rod 183 is in the holding position, the spring stopper 188 returns to its initial position and the spring stopper 188 prevents the weight 186 from moving. This maintains the movable holding rod 183 in the holding position.

When the attitude of the rotor 18 is variable by the attitude changing mechanism 80 described below, the operating mechanism 19 can be positioned in a position (e.g., directly above the rotor 18) where the spring stopper 188 and the rotating shaft 185 can be operated when the rotor 18 is in an upright position (see Figures 6 (A) and (B)). Needless to say, the rotor 18 can be stopped at a specific rotation angle position suitable for operation by the operating mechanism 19 by the angular position control function of the motor 24.

When the position of the rotor 18 is not variable, that is, when the rotation axis Ax of the rotor 18 always faces the X direction (horizontal direction), the operation mechanism 19 may be built into the second blocking structure 15B as shown in FIG. 5. Furthermore, the motor 24 may also be built into the second blocking structure 15B. In this case, although not shown in FIG. 5, a suitable seal structure is provided around the push rod of the pressing mechanism 191 and around the rotation shaft 192a of the rotation mechanism 192 so that the driving parts of the pressing mechanism 191 and the rotation mechanism 192 are not adversely affected by the processing liquid. Similarly, although not shown in FIG. 5, a suitable seal structure, for example a labyrinth seal structure, is provided around the rotation shaft 21 of the rotor 18 to prevent the processing liquid from entering the motor 24. In this case, a passage may be provided in the second blocking structure 15B to guide a small amount of liquid that has passed through the above seal structure to flow down to the second sub-chamber 11S2. When this configuration is adopted, the through hole 151H provided in the first plate 151 of the first blocking structure 15A is simply used to allow the processing liquid to overflow from the processing chamber 11C to the first sub-chamber 11S1.

The structure of the rotor 18 used in this embodiment (particularly the structure of the portion related to the operation of the movable holding rod 183) is already publicly known from patent publications related to the applicant's prior applications (see, for example, JP 2006-13194 A, etc.), and for further details, please refer to these publications.

Next, we will explain how to transfer the substrate to the rotor 18.

Here, the assembly of the rotor 18, first blocking structure 15A, rotating shaft 21, motor 24, and fixed member 154 described above with reference to FIG. 1 (referred to as "assembly AS" as described above) is assumed to be rotatable around the rotation axis AR extending in the Y direction (perpendicular to the paper surface of FIG. 6) by the attitude conversion mechanism 80 as shown in FIG. 6. In the case of the configuration of FIG. 6, when the rotation axis AR is viewed from the Y direction, it is at or near the position where the first disk 181 of the rotor 18 and the rotating shaft 21 intersect. The attitude conversion mechanism 80 can be composed of, for example, a rotation drive unit consisting of a stepping motor, and an arm (for example, the arm 155 shown diagrammatically in FIG. 1) fixed to the fixed member 154 (see FIG. 1) which is rotated (pivoted) by the rotation drive unit.

First, as shown in FIG. 6(A), the starting point is a state in which the empty rotor 18 is in an upright position (the rotation axis Ax faces vertically). At this time, the processing vessel 11 is in the second position, and the movable holding rod 183 of the rotor 18 is in the release position.

In this state, as shown in FIG. 6B, a substrate holder of a substrate transport robot (for example, an end effector 3C6 of a second substrate transport robot 3C described later) holding multiple substrates W enters the rotor 18 in the X direction (horizontal direction) and inserts the peripheral portion of the substrate W into the substrate holding groove of the fixed holding bar 182 of the rotor 18. The end effector then exits the rotor 18. When the fixed holding bar 182 of the rotor 18 has received a predetermined number of substrates W, the movable holding bar 183 is moved to the holding position by an operating mechanism 19 (not shown in FIG. 6) disposed directly above the rotor 18, so that the substrate W is firmly held by the movable holding bar 183. The end effector of the substrate transport robot may transfer the substrate W to the movable holding bar 183, move the movable holding bar 183 to the holding position, and then exit the end effector from the rotor 18.

Next, as shown in FIG. 6(C), the attitude of the rotor 18 holding the substrate W is changed by the attitude changing mechanism 80 to a horizontal attitude (attitude in which the rotation axis Ax faces the horizontal direction (X direction)).

Next, as shown in FIG. 6(D), the processing vessel 11 is moved in the X direction from the second position to the first position. Pressurized fluid is then supplied to the seal member 16, and the processing vessel 11 and the first and second closing structures 15A and 15B are hermetically engaged. This state is the same as the state shown in FIG. 1, and once this state is reached, it becomes possible to perform liquid processing of the substrate W in the processing chamber 11C.

When processing of the substrate W in the processing chamber 11C is completed, the supply of pressurized fluid to the sealing member 16 is stopped (or the pressurized fluid is discharged from the sealing member 16), and the above steps are reversed to remove the substrate from the rotor 18 and return it to the state shown in FIG. 6(A).

Pressurized fluid may be supplied to the seal member 16 when the processing vessel 11 is in the second position (when in the state shown in Figures 6(A) to (C)). By doing so, it is also possible to clean the members facing the first space 11S3, the second space 11S4, and the third space 11S5 (the inner surface of the processing vessel 11 and the surfaces of the first to fourth ring-shaped protrusions 111 to 114).

Next, we will explain the liquid processing of substrates performed in the liquid processing unit 10.

The following procedure executed by the liquid processing unit 10 is executed by the controller (control unit) 100 (see FIG. 1 and FIG. 9) controlling the operation of various components of the liquid processing unit 10. The controller 100 has an arithmetic processing unit 101 and a memory unit 102. The memory unit 102 stores programs that control various processes executed in the liquid processing unit 10. The arithmetic processing unit 101 controls the operation of the liquid processing unit 10 by reading and executing the programs stored in the memory unit 102. Note that such programs may be recorded in a computer-readable storage medium and installed from the storage medium into the storage unit 102 of the controller 100. Examples of computer-readable storage media include hard disks (HD), flexible disks (FD), compact disks (CD), magnet optical disks (MO), and memory cards. Note that the controller 100 may be a higher-level controller that controls not only the operation of the liquid processing unit 10 but also the overall operation of the substrate processing system 1 (described in detail later) in which the liquid processing unit 10 is incorporated.

[Substrate loading process]
As previously described with reference to FIG. 6, the substrate W is carried into the rotor 18, and then brought into the state shown in FIG. 6(D) and FIG.

[Chemical solution treatment process]
Next, nitrogen gas (inert gas) is supplied from the processing fluid nozzle 30 (gas nozzle 33) into the processing chamber 11C. The atmosphere in the first sub-chamber 11S1 and the second sub-chamber 11S2 is sucked through the exhaust line 143, and the first sub-chamber 11S1 and the second sub-chamber 11S2 are depressurized, so that the atmosphere in the processing chamber 11C (air atmosphere) flows out to the first sub-chamber 11S1 and the second sub-chamber 11S2 through the ventilation paths 127 and 128. Therefore, the atmosphere in the processing chamber 11C is replaced with a nitrogen gas atmosphere (non-oxidizing atmosphere). It is preferable that the supply flow rate of nitrogen gas from the processing fluid nozzle 30 and the exhaust flow rate through the exhaust line 143 are adjusted so that the pressure in the processing chamber 11C becomes a slightly positive pressure.

It is preferable to maintain a nitrogen gas atmosphere in the processing chamber 11C continuously until the drying process is completed. However, to reduce running costs, the atmosphere may be air during the rinsing process, for example.

Next, the rotor 18 is rotated at a relatively low speed (for example, about 10 to 200 rpm). At this point, the chemical solution is circulating in a temperature-controlled state through the tank 51, the upstream circulation line 52, the bypass line 57, and the downstream circulation line 53 (bypassing the processing chamber 11C). In other words, the "standby circulation" described above is being performed here.

Next, the on-off valve V1 of the bypass line 57 is closed, and the on-off valves V2 and V3 provided on the upstream circulation line 52 and the downstream circulation line 53 are opened, so that the chemical solution is supplied from the chemical solution nozzle 28 to the processing chamber 11C without passing through the bypass line 57.

When the level of the chemical in the processing chamber 11C exceeds a certain level, the chemical in the processing chamber 11C flows out (overflows) into the first sub-chamber 11S1 through a communication passage (for example, through hole 151H provided in the first plate). The chemical that flows out into the first sub-chamber 11S1 is discharged into the downstream circulation line 53 through the circulation drain port 131 and returned to the tank 51, and is supplied again to the processing chamber 11C from the chemical nozzle 28 through the upstream circulation line 52. By appropriately adjusting the flow rate of the chemical supplied from the chemical nozzle 28 into the processing chamber 11C, the chemical circulates while maintaining the chemical level in the processing chamber 11C at the desired level (hereinafter also referred to as the "chemical processing level"). In other words, the "normal circulation" described above is performed here. The chemical liquid in the processing chamber 11C also flows (leaks) through the seal member 16 into the second sub-chamber 11S2, but this chemical liquid also flows out through the circulation drain port 132 into the downstream circulation line 53 and circulates within the circulation path. During normal circulation, in order to prevent a drop in the temperature of the chemical liquid in the processing chamber 11C, the wall of the processing vessel 11 facing the processing chamber 11C is heated by the heater 129 to, for example, approximately the same temperature as the set temperature of the chemical liquid.

The liquid level during chemical processing can be, for example, such that the lower half of each substrate W is immersed in the chemical stored in the processing chamber 11C. Because the substrates W are rotated by the rotor 18, the portions of the surface of each substrate W above the chemical level do not dry out. Since the chemical adhering to the surface of the substrate W above the chemical level flows downward over the substrate surface due to gravity, depending on the viscosity of the chemical and the wettability of the chemical to the surface of the substrate W, it may be sufficient for about the lower ⅓ of the substrate W to be immersed in the chemical.

Immersing only a portion of each substrate W in the chemical solution is preferable in terms of reducing the rotational drive load of the rotor 18 and achieving a relatively high relative speed between the surface of the substrate W and the chemical solution, compared to immersing the entire substrate W. However, the liquid level during chemical processing may be set to a level such that the entire substrate W is immersed in the chemical solution stored in the processing chamber 11C. Regardless of the liquid level during chemical processing, the chemical solution in the processing chamber 11C is agitated by the rotating rotor 18 and the substrate W, so that the composition of the chemical solution in the processing chamber 11C is homogenized, improving the in-plane and inter-plane uniformity of the processing of the substrate W.

The distance between the substrate W closest to disk 181A among the multiple substrates W held by rotor 18 and disk 181A is preferably equal or approximately equal to the distance between adjacent substrates W. The distance between disk 181B and the substrate W closest to disk 181B is also preferably equal or approximately equal to the distance between adjacent substrates W. By doing so, the flow conditions of the chemical solution near the surfaces of the substrates at both ends become approximately the same as those of the other substrates, thereby improving the surface-to-surface uniformity of the processing of the substrates W.

During the chemical processing step, the space above the liquid level in the processing chamber 11C is filled with a nitrogen gas atmosphere, which can prevent oxygen in the processing chamber 11C from dissolving in the chemical liquid, adversely affecting the processing results, and can prevent the chemical liquid from deteriorating due to oxidation. In addition, when only a portion of the substrate W is immersed in the chemical liquid, oxidation of the upper half of the substrate W can be prevented.

For example, if the chemical processing is a process of etching Poly-Si with TMAH, and the substrate is held by a non-rotating substrate holder, and the atmosphere in the processing tank is air, oxygen in the air will dissolve into the TMAH, increasing the oxygen concentration in the TMAH near the liquid surface, which may impair the in-plane etching uniformity. This embodiment does not cause such a problem.

In this embodiment, the processing chamber 11C is closed and generally sealed. Nitrogen gas is supplied into the processing chamber 11C, and the atmosphere in the processing chamber 11C is sucked in through the ventilation paths 127 and 128, but the nitrogen gas supply flow rate and the suction flow rate of the processing chamber 11C are small enough to maintain the processing chamber 11C in a nitrogen gas atmosphere. Therefore, since the water vapor evaporated from the surface of the chemical in the processing chamber 11C cannot freely go outside the processing chamber 11C, the change in the concentration of the chemical circulating in the chemical circulation system is suppressed to a low level. Therefore, it is possible to suppress the fluctuation of the etching rate (or reaction rate). This effect is remarkable when compared with a batch-type liquid processing unit that uses an atmospheric-open type processing chamber (processing tank).

After the predetermined chemical processing time has elapsed, the processing chamber 11C transitions to a state in which there is substantially no chemical liquid. Specifically, for example, the on-off valve V1 of the bypass line 57 is opened, the on-off valves V2 and V3 provided in the upstream circulation line 52 and the downstream circulation line 53 are closed, and the on-off valve V4 of the drain line 136 is opened. This stops the supply of chemical liquid from the chemical nozzle 28 into the processing chamber 11C, and also drains the chemical liquid remaining in the processing chamber 11C, the first sub-chamber 11S1, and the second sub-chamber 11S2. At this point, the processing chamber 11C transitions from "normal circulation" to "standby circulation."

If it is desired to reuse the chemical remaining in the processing chamber 11C, the first sub-chamber 11S1, and the second sub-chamber 11S2, a recovery line (not shown) may be branched off from the drain line 136, and a configuration may be adopted in which the chemical can be returned, for example, to the tank 51 of the chemical circulation mechanism 50 via this recovery line.

After almost all of the chemical liquid has been discharged from the processing chamber 11C, or after the level of the chemical liquid in the processing chamber 11C has fallen below the lowest part of the rotor 18, the rotor 18 is rotated at a medium speed, for example, of 500 rpm or less, to shake off and remove the chemical liquid adhering to the substrate W. This shaking off of the chemical liquid may be omitted.

[Rinse process]
Next, while the rotor 18 is rotated at a relatively low speed, for example, about 10 to 200 rpm, a rinse liquid (for example, DIW) is discharged from the processing fluid nozzle 30 (rinse nozzle 31) provided in the processing chamber 11C. A rinse liquid is also discharged as a cleaning liquid from the cleaning liquid nozzles 37, 38 in the first sub-chamber 11S1 and the second sub-chamber 11S2. The rinse liquid may be at room temperature or may be heated.

As a result, the chemical remaining on the surface of the substrate W is washed away by the rinse liquid. The surfaces of the components of the liquid processing unit 10 (processing vessel 11, rotor 18, rotating shaft 21, etc.) that face the internal space of the processing chamber 11C are also washed away by the rinse liquid discharged from the rinse nozzle 31 and the rinse liquid scattered from the rotor 18 and the substrate W. The surfaces of the components of the liquid processing unit 10 that face the internal spaces of the first subchamber 11S1 and the second subchamber 11S2 are also washed away by the rinse liquid. The rinse liquid (cleaning liquid) in the processing chamber 11C and the first and second subchambers 11S1 and 11S2 is discharged via the drain line 136 with the on-off valve V4 open.

Next, the supply of rinsing liquid from the rinse nozzle 31 and the cleaning liquid nozzles 37, 38 is stopped, and the rotor 18 is rotated at a medium speed, for example, less than about 500 rpm, thereby shaking off and removing some of the rinsing liquid adhering to the rotor 18 and the substrate W (the rinsing liquid is not completely removed so as not to dry out). While the rinsing liquid adhering to the substrate W is being shaken off, the cleaning liquid (rinsing liquid) may continue to be discharged from the cleaning liquid nozzles 37, 38. The shaking off may be omitted and the process may proceed to the next step.

[Drying step (first step: drying pretreatment)]
Next, the rotation speed of the rotor 18 is set to a medium speed, for example, about 10 to 200 rpm, and any one of the following is discharged from the drying fluid nozzle 32 as a drying fluid.
(1) IPA mist or IPA vapor (2) Mixture of IPA mist and SMD mist or SMD vapor In either case (1) or (2) above, the rinsing liquid (DIW) on the surface of the substrate W, particularly in the recesses of the pattern, is replaced with IPA. In the case of (2) above, the surface of the substrate W, particularly in the recesses of the pattern, is further hydrophobized.
Instead of the above (2), SMD mist or SMD steam may be supplied after the IPA mist or IPA steam is supplied.

[Drying step (second step: main drying treatment)]
Next, while continuing to supply nitrogen gas from the processing fluid nozzle 30 (gas nozzle 33), the ejection of the drying fluid from the drying fluid nozzle 32 is stopped, and (A) reduced pressure drying or (B) spin drying is performed as the main drying process.

(A) When performing reduced pressure drying, the pressure inside the processing chamber 11C is reduced to, for example, about -20 kPa gauge pressure by adjusting (for example, increasing) the exhaust flow rate through the exhaust line 143. If the exhaust line 143 is provided with a suction device such as an ejector or a vacuum pump, the exhaust flow rate can be adjusted by adjusting the suction force of the suction device. If the exhaust line 143 is provided with a valve with a flow rate adjustment function such as a butterfly valve, the opening degree of the valve can be adjusted. By maintaining the reduced pressure inside the processing chamber 11C for about 5 minutes, the IPA evaporates and the entire surface of the substrate W, including the recesses in the pattern, is dried. (A) When performing reduced pressure drying, the rotation speed of the rotor 18 may be maintained the same as during the execution of the drying pre-processing, or may be stopped.

(B) When spin drying is performed, the rotation speed of the rotor 18 is increased, for example to a relatively high speed of about 100 to 1000 rpm (specifically, for example, about 800 rpm). By continuing this state for about 5 minutes, the IPA on the substrate W is shaken off and evaporated, and the entire surface of the substrate W, including the inside of the recesses of the pattern, is dried. (B) Spin drying may be performed with the pressure inside the processing chamber 11C reduced to about -20 kPa in gauge pressure. In other words, (A) reduced pressure drying and (B) spin drying may be performed simultaneously.

This completes the processing of one batch (e.g., 25 substrates).

[Substrate removal process]
Next, the supply of nitrogen gas from the gas nozzle 33 is stopped. Next, the substrate W is removed from the rotor 18 in a reverse procedure from (D) to (A) in Fig. 6. The removed substrate W is accommodated, for example, in the original substrate transport pod C.

Below are examples of chemical liquid treatments and treatment conditions performed by the liquid treatment unit 10.

<Example 1>
Purpose of chemical treatment: Poly-Si etching of channel Chemical: TMAH, TM-Y (trimethyl-2-hydroxyethyl ammonium hydroxide), SC1 and other alkaline chemicals Chemical temperature: 60-80°C
Processing time: up to 60 min

<Example 2>
Purpose of chemical treatment: W etching of W/TiN, or Mo etching of Mo/TiN (metal etching)
Chemical solution: PAN (phosphoric acid + acetic acid + nitric acid)
Chemical solution temperature: 20 to 80°C
Processing time: up to 90 min
(Note: The chemical solution may consist only of organic acids (acetic acid, formic acid, oxalic acid, etc.).)

<Example 3>
Purpose of chemical treatment: SiN etching (dummy words not included)
Chemical solution: phosphoric acid Chemical solution temperature: 150-165°C
Processing time: up to 300 min

Next, we will explain modified embodiments of the liquid processing unit.

[First Modified Embodiment]
In the above embodiment, the processing vessel 11 moves in the X direction, and the assembly AS of the rotor 18, the motor 24, and the first blocking structure 15A and the second blocking structure 15B do not move in the X direction, but this is not limited thereto. That is, as shown in FIG. 7, the processing vessel 11 may be fixed (not moved in the X direction), and the assembly AS and the second blocking structure 15B may be moved in the X direction. FIG. 7(A) shows a state in which the rotor 18 is accommodated in the processing vessel 11 and can perform liquid processing on the substrate. In FIG. 7(A), the positional relationship between the rotor 18 and the processing vessel 11 is the first positional relationship described above. In FIG. 7(B), the rotor 18 is located outside the processing vessel 11, and the second blocking structure 15B is located inside the processing vessel 11. In FIG. 7(B), the positional relationship between the rotor 18 and the processing vessel 11 is the second positional relationship described above. In the state shown in Fig. 7B, a substrate can be transferred between the substrate transport robot and the rotor 18. The attitude of the rotor 18 can be changed by a attitude changing mechanism not shown in Fig. 7. If the processing vessel 11 is movable, for example, a supply line must be configured to allow the movement of the processing vessel 11 (for example, by using a flexible tube), but if the processing vessel 11 is fixed, such a configuration is not necessary.

[Second modified embodiment]
In the above embodiment, both ends of the processing vessel 11 are open, but this is not limiting. As shown in FIG. 8, only the first end of the processing vessel 11 may be open and the second end may be closed. In this second modified embodiment, the configuration of the first end side of the processing vessel 11 is the same as that shown in FIG. 1, and only the configuration of the second end side is changed, and the second blocking structure 15B is not provided. In this second modified embodiment, the processing vessel 11 may be moved in the X direction, or an assembly AS consisting of the rotor 18, the rotating shaft 21, the motor 24, the first blocking structure 15A, etc. may be moved in the X direction. A double wall consisting of a first wall 117 and a second wall 118 may be provided at the second end of the processing vessel 11, and the space between the two walls 117 and 118 may be used as the second sub-chamber 11S2'. A circulation drain port and a waste drain port may be provided at the bottom of the second sub-chamber 11S2'. If a through hole (liquid communication passage) is provided in the first wall 117, the chemical liquid in the processing chamber 11C can be made to overflow not only into the first sub-chamber 11S1 but also into the second sub-chamber 11S2'.

[Processing liquid supply mechanism capable of supplying multiple chemical liquids]
In the above embodiment, one type of chemical solution is used, but the present invention is not limited to this, and two or more types of chemical solutions may be used for the liquid processing. In this case, after the first chemical processing step, the first rinsing step is performed, and then the second chemical processing step and the second rinsing step are performed (without proceeding to the drying step), and then the process proceeds to the drying step.

Below, a liquid treatment unit 10 capable of performing liquid treatment using two types of chemical liquid, an acidic chemical liquid and an alkaline chemical liquid, will be described with reference to FIG. 9. The differences between the configuration shown in FIG. 9 and the configuration shown in FIG. 1 will be briefly described below.

Two circulation mechanisms, an acidic chemical circulation mechanism 50A and an alkaline chemical circulation mechanism 50B, are provided. By appropriately switching the on-off valves provided in these circulation mechanisms 50A and 50B, one of the chemicals in the circulation mechanisms 50A and 50B can be circulated through the chemical nozzle 28, the processing chamber 11C, the first subchamber 11S1, and the second subchamber 11S2 (corresponding to the above-mentioned "normal circulation"), and the other chemical in the circulation mechanisms 50A and 50B can be circulated through the bypass line (57A or 57B) (corresponding to the above-mentioned "standby circulation"). The components with "A" after the number "50+N" (N is a single-digit natural number) are components related to the acidic chemical circulation mechanism 50A, and the components with "B" after the number are components related to the alkaline chemical circulation mechanism 50B. Components with reference numbers in the 50s with an alphabetical suffix (A, B) (e.g., 51A) have the same function as components in FIG. 1 with reference numbers in the 50s without an alphabetical suffix (A, B) (e.g., 51A).

The drainage line 136 can be selectively connected to the drainage pipeline of the semiconductor manufacturing plant, the downstream circulation line 53A of the acidic chemical circulation mechanism 50A, and the downstream circulation line 53B of the alkaline chemical circulation mechanism 50B. For this purpose, the drainage line 136 and the downstream circulation lines 53A and 53B are provided with on-off valves.

In detail, the downstream end of the drain line 136 can be selectively connected to either the acidic drainage pipeline or the alkaline drainage pipeline of the semiconductor manufacturing factory via the drain box. On the upstream side of the drain box, the drain line 136 is connected to the downstream circulation line 53A of the acidic chemical circulation mechanism 50A and the downstream circulation line 53B of the alkaline chemical circulation mechanism 50B. Opening and closing valves are provided on the drain line 136 and the downstream circulation lines 53A and 53B, and by appropriately switching these opening and closing valves, the drain line 136 can be selectively connected to either the drain pipeline of the semiconductor manufacturing factory, the downstream circulation line 53A, or the downstream circulation line 53B.

Recovery lines 53A1 and 53B1 branch off from the downstream circulation line 53A and downstream circulation line 53B, respectively, and an acid recovery tank 53A2 and an alkali recovery tank 53B2 are interposed in the recovery lines 53A1 and 53B1. The recovery line 53A1 (53B1) can be used to temporarily store the chemical discharged from the first sub-chamber 11S1 and the second sub-chamber 11S2 in the acid recovery tank 53A2 (alkali recovery tank 53B2) without discarding it when the chemical is not circulating in the acid chemical circulation mechanism 50A (alkaline chemical circulation mechanism 50B). The chemical stored in the acid recovery tank 53A2 (alkali recovery tank 53B2) can be returned to the tank 51A (51B) of the acid chemical circulation mechanism 50A (alkaline chemical circulation mechanism 50B) at an appropriate time.

An exhaust box 144 is provided in the exhaust line 143 to separate moisture (mist, etc.) contained in the exhaust from the exhaust (gas). Downstream of the exhaust box 144, the exhaust line 143 branches into a line for acid exhaust (connected to the acid exhaust duct (Ac-EXH) of the semiconductor manufacturing factory), a line for alkali exhaust (connected to the alkali exhaust duct (Al-EXH) of the semiconductor manufacturing factory), and a line for organic exhaust (connected to the organic exhaust duct (Or-EXH) of the semiconductor manufacturing factory). The drainage line 145 branching off from the exhaust line 143 at the exhaust box 144 branches into a line for acid drainage (connected to the acid drainage pipe (Ac-DR) of the semiconductor manufacturing factory), a line for alkali drainage (connected to the alkali drainage pipe (Al-DR) of the semiconductor manufacturing factory), and a line for organic drainage (connected to the organic drainage pipe (Or-DR) of the semiconductor manufacturing factory). By appropriately switching the on-off valves installed in each of the above lines, the exhaust gas and waste liquid are discharged to a destination that corresponds to the type of exhaust gas and waste liquid.

Unlike the processing vessel 11 shown in FIG. 1, the bottom of the processing vessel 11 shown in FIG. 9 does not have circulation drainage ports 131, 132 directly connected to the downstream circulation lines 53A, 53B, but instead allows the drainage line 136 connected to the waste liquid drainage ports 133, 134 to communicate with the downstream circulation lines 53A, 53B as necessary. The various components provided at the top of the processing vessel 11 shown in FIG. 9 are the same as those provided at the top of the processing vessel 11 shown in FIG. 1, and repeated explanations will be omitted.

According to the embodiment of the liquid processing unit 10 described above, since a plurality of substrates are arranged in a vertical position in the horizontal direction, held by a rotor, and processed while rotating around a horizontal axis, the in-plane temperature uniformity of each substrate can be improved, and therefore the in-plane uniformity of the processing result can be improved. In addition, since the processing liquid is agitated by rotating the substrate, the state of the processing liquid at each location in the processing chamber can be made uniform. In addition, since the processing liquid that reacts with the substrate surface is immediately replaced by rotating the substrate, the in-plane uniformity of the processing of each substrate can be improved. In addition, since the replacement of the processing liquid in the recesses of the pattern formed on the substrate surface is improved, uniform etching can be performed even between the top and bottom of the pattern. In addition, by rotating the substrate, the relative speed between the substrate surface and the processing liquid can be made uniform between the substrates. In this way, it is no longer necessary to implement various measures (for example, increasing the discharge flow rate from the processing liquid nozzle, increasing the flow rate of the processing liquid by discharging nitrogen gas (due to the buoyancy acting on the bubbles)) to improve the in-plane/inter-plane uniformity of the processing in the conventional batch-type liquid processing apparatus that does not rotate the substrate.

In addition, according to the above embodiment of the liquid processing unit 10, since the processing chamber is closed and substantially sealed, processing from chemical processing to drying processing can be performed continuously without exposing the substrate surface to the outside air. By making the processing chamber, for example, an inert gas atmosphere, processing that is not preferable under oxygen concentrations similar to those of the atmosphere (for example, processing of a substrate with exposed metal wiring material that oxidizes relatively easily, or chalcogenide such as SxP that requires a low oxygen concentration atmosphere) can be performed without problems. By making the processing chamber, for example, an inert gas atmosphere, deterioration of the chemical solution due to oxygen can be suppressed. In addition, since the processing chamber is closed and substantially sealed, changes in the chemical solution concentration due to evaporation of water in the chemical solution can also be suppressed.

Next, the overall configuration of the substrate processing system 1 equipped with the above-mentioned liquid processing unit 10 will be described with reference to Figures 10 to 14. For ease of explanation, an X'Y'Z' Cartesian coordinate system will be set for the entire substrate processing system, and the explanation will be given with reference to this Cartesian coordinate system as appropriate. The X' and Y' directions are horizontal directions that are mutually perpendicular, and the Z' direction is the vertical direction.

The substrate processing system 1 has a carrier block 2 and a processing block 3.

The carrier block 2 is provided with a load port 2A and a first transport space 2B. The load port 2A is provided with a plurality of container mounting tables 2A1 (container mounting sections) arranged along the Y' direction. Each container mounting table 2A1 can mount one substrate transport container C (hereinafter simply referred to as "container C") such as a FOUP. The container C contains a plurality of substrates W, for example 25 substrates W, in a horizontal position and at equal intervals (at a first equal pitch P1) in the vertical direction (Z' direction).

The load port 2A and the first transfer space 2B are separated by a partition wall having an opening that can be opened and closed. A first substrate transfer robot (first substrate transfer device) 2C is provided in the first transfer space 2B. The first substrate transfer robot 2C can be configured as a multi-axis (having X, Y, Z, θ axes, etc.) transfer robot or an articulated robot.

The processing block 3 is provided with a transfer unit (substrate transfer section) 3A for unprocessed substrates, a transfer unit (substrate transfer section) 3B for processed substrates, a second substrate transport robot (second substrate transport device) 3C, and a number of liquid processing units 10. Each liquid processing unit 10 has the configuration described above (e.g., the configuration shown in FIG. 1). The configurations of the transfer units 3A and 3B are substantially the same. The transfer units 3A and 3B act as relay units that mediate the transfer of substrates W between the first substrate transport robot 2C and the second substrate transport robot 3C.

The first substrate transport robot 2C can transport substrates W between a container C placed on any container mounting table 2A1 of the load port 2A and the transfer units 3A and 3B. The first substrate transport robot 2C has an end effector (which has, for example, 25 forks) that can hold multiple substrates W at once, for example, 25 substrates W. The first substrate transport robot 2C can take out multiple substrates W, for example, 25 substrates W, all at once from a container C placed on the container mounting table 2A1, and transfer them all at once to the substrate holding structure 3A1 of the transfer unit 3A. The first substrate transport robot 2C can also take out multiple substrates W, for example, 25 substrates W, all at once from the substrate holding structure 3B1 of the transfer unit 3B, and store them in a container C placed on the container mounting table 2A1.

Next, the configuration of the transfer unit 3A provided in the processing block 3 will be described with reference to Figures 15 and 16. The transfer unit 3A has a substrate holding structure 3A1, a moving mechanism 3A2, and a posture changing mechanism 3A3.

The substrate holding structure 3A1 has a generally box-shaped frame (frame body) 3A11 with an open front, a number of substrate support members 3A12 attached to the frame 3A11, and a pitch change mechanism 3A13 that changes the spacing between the substrate support members 3A12. The substrate support members 3A12 are formed, for example, to support the peripheral portion of the rear surface of the substrate W from below.

The moving mechanism 3A2 can move the substrate holding structure 3A1 in the X direction between a first position (shown on the left side of FIG. 16) and a second position (shown on the right side of FIG. 16). The first position of the substrate holding structure 3A1 is a position suitable for transferring the substrate W between the substrate holding structure 3A1 and the first substrate transport robot 2C. The second position of the substrate holding structure 3A1 is a position suitable for transferring the substrate W between the substrate holding structure 3A1 and the second substrate transport robot 3C. The moving mechanism 3A2 can be composed of, for example, a guide rail 3A21 extending in the X direction and a running body 3A22 running along the guide rail.

If the transfer of the substrate W between the substrate holding structure 3A1 and the first substrate transport robot 2C, and the transfer of the substrate W between the substrate holding structure 3A1 and the second substrate transport robot 3C can be performed without hindrance at the same position (i.e., without moving the substrate holding structure 3A1), the moving mechanism 3A2 can be omitted. As will be understood from the following explanation, in this embodiment, the function (horizontal movement range) of the second substrate transport robot 3C is limited in order to make the second substrate transport robot 3C more compact, so it is preferable to provide the moving mechanism 3A2.

The pitch change mechanism 3A13 is provided, for example, between the multiple substrate support members 3A12 and the frame 3A11. The pitch change mechanism 3A13 can change the arrangement pitch of the multiple support members 3A12 of the substrate holding structure 3A1 between a first uniform pitch P1 and a second uniform pitch P2.

Various types of pitch change mechanisms are already known, such as cam type, air cylinder type, and lazy tongue (multiple parallel pantograph links) type, and here, for example, a cam type can be used. Pitch change mechanisms are commercially available under names such as pitch changers, pitch change mechanisms, and pitch change units, and a description of the specific structure of the pitch change mechanism is omitted. Most of the known pitch change mechanisms are configured to maintain a state in which multiple sliders are always arranged at equal intervals, regardless of the pitch size. The slider, not shown, is integrally connected to the above-mentioned substrate support member 3A12, and the arrangement pitch of the substrates W supported by the substrate support member 3A12 can be changed by moving the slider.

The posture conversion mechanism 3A3 can be composed of, for example, an electric rotary motor (e.g., a stepping motor) 3A31, a drive timing pulley 3A32, a driven timing pulley 3A33, a timing belt 3A34 stretched between the timing pulleys 3A32 and 3A33, a rotating shaft 3A37, and a support 3A36. The electric rotary motor 3A31 is attached to the running body 3A22 of the moving mechanism 3A2, and the drive timing pulley 3A32 is attached to the rotating shaft of the electric rotary motor 3A31. The rotating shaft 3A37 extends in the Y direction (horizontal direction) from the frame 3A11 of the substrate holding structure 3A1, and the rotating shaft 3A37 is supported by the support 3A36 via a bearing or the like. The driven timing pulley 3A33 is provided at the tip of the rotating shaft 3A37. Therefore, by driving the electric rotary motor 3A31, the frame 3A11 of the substrate holding structure 3A1 can be rotated around a horizontal axis extending in the Y direction. This allows the position of the substrate W held by the substrate support member 3A12 to be changed between a horizontal position and a vertical position.

The substrate support member 3A12 may be provided with a means for removably fixing the supported substrate W to the support member, such as a suction pad 3A15. This can reliably prevent the substrate W from falling off the substrate support member 3A12 when the substrate W assumes a vertical position.

The configuration of transfer unit 3B is the same as that of transfer unit 3A, so illustrations and explanations of the structure are omitted. Hereinafter, in this specification, the components of transfer unit 3B are represented by changing the reference numerals of the same components of transfer unit 3A from "A" to "B" (for example, "posture change mechanism 3A3" to "posture change mechanism 3B3").

An example of the configuration of the second substrate transport robot 3C will be described with reference to FIG. 17. The second substrate transport robot 3C has a base 3C1, a turntable 3C2, a guide rail 3C3, a lifting body 3C4, an arm 3C5, and an end effector 3C6.

The base 3C1 is fixed to a machine frame (not shown) of the substrate processing system 1. The turntable 3C2 is attached to the base 3C1 so as to be rotatable about a vertical axis Ax1. By rotating the turntable 3C2, the longitudinal central axis of the arm 3C5 can be directed in any direction. The guide rail 3C3 extends vertically at a position offset from the vertical axis Ax1. The lifting body 3C4 is raised and lowered along the guide rail 3C3 by a lifting drive mechanism (not shown) built into the lifting body 3C4. The arm 3C5 moves horizontally by an arm drive mechanism (not shown) built into the lifting body 3C4. The longitudinal central axis of the arm 3C5 is perpendicular to the vertical axis Ax1. In other words, the arm 3C5 can move forward and backward in a radial direction perpendicular to the vertical axis Ax1, regardless of the rotation angle position of the turntable 3C2.

The end effector 3C6 is provided with a plurality of substrate holders 3C61, for example, 5 or 25 (only 5 are shown in FIG. 17 to simplify the drawing). The substrate holders 3C61 hold a plurality of substrates W in a vertical position and at equal intervals in the horizontal direction (second equal pitch P2). Each substrate holder 3C61 has a suction pad 3C62, which holds the upper peripheral portion of the substrate W by vacuum suction.

The end effector 3C6 of the second substrate transport robot 3C may be configured to hold multiple substrates W in a horizontal position at equal intervals (second equal pitch P2) in the vertical direction, as shown in FIG. 18.

The end effector 3C6 of the second substrate transport robot 3C may be capable of taking a first position in which the substrate W is held in a horizontal position and a second position in which the substrate W is held in a vertical position, as shown in FIG. 19. Such a function can be realized, for example, by connecting the arm 3C5 and the end effector 3C6 via a rotation mechanism 3C7.

Although not shown, the end effector 3C6 may be provided with a pitch change mechanism that changes the distance between the substrate holders 3C61 (i.e., the substrate arrangement pitch). Note that in the field of substrate transport robots, end effectors that can change the substrate arrangement pitch are well known, so a description of such mechanisms is omitted in this specification.

The configuration of the second substrate transport robot 3C can be determined in relation to whether the rotor 18 has a posture change function, and whether the transfer units 3A and 3B have a posture change function and pitch change function.

In each of the above examples, the movement function of the arm 3C5 of the second substrate transport robot 3C is limited to the function of vertically raising and lowering the arm 3C5 so that it faces the object to be loaded or unloaded (e.g., the rotor 18), the function of rotating (pivoting) the arm 3C5 about the vertical axis Ax1, and the function of moving the arm 3C5 forward and backward horizontally relative to the object to be loaded or unloaded. This allows the second substrate transport robot 3C to be formed compactly with a simple structure, and the footprint area to be reduced.

The configuration of the second substrate transport robot 3C is not limited to the above, and other configurations can be adopted as long as they can achieve the desired transport of substrates W within the processing block 3 described below. For example, the support pillar may be of a telescopic type, and at its upper end, a rotation mechanism for rotating the arm 3C5 about a vertical axis and a horizontal movement mechanism for moving the arm 3C5 toward and away from the target to be loaded or unloaded (e.g., the rotor 18) may be provided.

For example, if the second substrate transport robot 3C is of a type that transports the substrate W in a horizontal position, each substrate holder of the end effector 3C6 may be of a mechanical clamp type using movable gripping claws or the like instead of a vacuum clamp type using suction pads.

Next, referring again to Figures 10 to 14, the arrangement of the multiple liquid processing units 10 and various devices within the processing block 3 will be described in detail.

In addition to the above-mentioned transfer units 3A and 3B, second substrate transport robot 3C, and liquid processing unit 10, various equipment that provides utility services is provided within processing block 3.

In Figures 10 to 14, a rectangular box with reference numeral 201 indicates that various devices (such as the chemical circulation mechanism 50 shown in Figures 1 and 9) involved in the supply of various processing fluids (chemicals, pure water, IPA, nitrogen gas, etc.) supplied to the liquid processing unit 10 are arranged within the area enclosed by the box. For ease of explanation, the box 201 will be referred to as the "fluid supply box 201" below.

In Figures 10 to 14, the rectangular box labeled with reference number 202 indicates that various devices involved in the recovery and disposal of various processing fluids discharged from the liquid processing unit 10 (such as the exhaust line 143 and exhaust box 144 shown in Figure 9) are located within the area enclosed by the box. For ease of explanation, the box 202 will be referred to as the "fluid discharge box 202" below.

The rectangular box labeled with reference number 203 indicates that within the area enclosed by the box, devices for supplying power to the liquid treatment unit 10 and devices for controlling the liquid treatment unit 10 (such as the controller 100 shown in Figures 1 and 9) are located. For ease of explanation, the box 203 will be referred to as the "electrical/control box 203" below.

Each box (201, 202, 203) is a virtual box that roughly shows the outline of the area in which the equipment is placed, and does not mean that the equipment is placed in a single case or housing of a shape corresponding to the box. In each box (201, 202, 203), the equipment may be placed in a single case or housing of a shape corresponding to the box, but a collection of exposed piping, wiring, devices, etc. that is not housed in a case may also be placed in the area corresponding to the box.

The processing block 3 has multiple levels of different heights. In the illustrated example, the processing block 3 has a first level L1 (lowest level), a second level L2 (middle level), and a third level L3 (top level). For ease of explanation, the Z' coordinate of the first level L1 is defined as 1, the Z' coordinate of the second level L2 as 2, and the Z' coordinate of the third level L3 as 3.

Each level is roughly divided into nine sections. The X' coordinate of the leftmost section in the floor plan is defined as 1, the X' coordinate of the rightmost section as 3, and the X' coordinate of the middle section as 2. The Y' coordinate of the bottommost section in the floor plan is defined as 1, the Y' coordinate of the topmost section as 3, and the Y' coordinate of the middle section as 2. In the following explanation, section (N, M) means the section with an X' coordinate of N and a Y' coordinate of M.

In all of the first level L1, the second level L2, and the third level L3, the section (1,1) and the section (3,3) are provided with a fluid discharge box 202. The fluid discharge box 202 is provided continuously in the vertical direction through the first level L1, the second level L2, and the third level L3.

In all of the first level L1, second level L2, and third level L3, the section (1,3) and the section (3,1) are provided with a fluid supply box 201. The fluid supply box 201 is provided continuously in the vertical direction through the first level L1, second level L2, and third level L3.

In all of the first level L1, second level L2 and third level L3, a second substrate transport robot 3C is provided in section (2, 2), i.e. the central section, in a continuous vertical manner through the first level L1, second level L2 and third level L3.

In each of the second floor L2 and the third floor L3, the sections (1,2), (2,1), (2,3), and (3,2) are provided with one liquid processing unit 10. In addition, in the first floor L1, the sections (2,1) and (2,3) are provided with one liquid processing unit 10. The rotor 18 of each liquid processing unit 10 is provided on the side closer to the second substrate transport robot 3C, and the rotation axis Ax of the rotor 18 faces the second substrate transport robot 3C. In a plan view, the processing vessel 11 of each liquid processing unit 10 moves toward and away from the second substrate transport robot 3C. The first position (processing position) of the processing vessel 11 of each liquid processing unit 10 is on the side closer to the second substrate transport robot 3C, and the second position (retraction position) is on the side farther from the second substrate transport robot 3C.

Transfer units 3A and 3B are arranged in the sections (1, 2) of the first level L1. That is, in the illustrated embodiment, one of the multiple liquid processing units 10 is arranged above the transfer units 3A and 3B. The transfer units 3A and 3B may be provided on the second level L2 or the third level L3, and one of the multiple liquid processing units 10 may be arranged below the transfer units 3A and 3B. By arranging one of the liquid processing units 10 so that it is vertically overlapping, the space within the processing block 3 can be used effectively.

In this embodiment, as shown in FIG. 11, a transfer unit 3A that handles unprocessed substrates W is provided above a transfer unit 3B that handles processed substrates W. In each of the transfer units 3A and 3B, the substrate holding structure 3A1 (3B1) is adapted to move in the X' direction so as to approach and separate from the second substrate transport robot 3C, and the second position of the substrate holding structure 3A1 (3B1) is on the side closer to the second substrate transport robot 3C.

Because the processing block 3 is configured as described above, the second substrate transport robot 3C can transfer substrates W between the rotors 18 of all liquid processing units 10 in the processing block 3. Furthermore, the second substrate transport robot 3C can transfer substrates W between the substrate holding structures 3A1, 3A2 located at the second positions of the transfer units 3A, 3B.

Next, we will explain the flow of substrates W within the substrate processing system 1. The operations of the various devices described below are controlled by a controller (e.g., the controller 100 described above) that controls the operation of the entire substrate processing system 1.

[First Example of Substrate Flow]
First, a case will be described where the attitude of the rotor 18 of the liquid processing unit 10 is variable. In this case, the substrate W is transported while maintaining the horizontal attitude from the time it is taken out of the container C until it is transferred to the rotor 18. In this case, the attitude changing mechanisms 3A3, 3B3 are omitted from the delivery units 3A, 3B, and a second substrate transport robot 3C (e.g., having the configuration shown in FIG. 18) that transports the substrate in a horizontal attitude is used.

The first substrate transport robot 2C simultaneously picks up multiple unprocessed substrates W (e.g., 25 substrates) stored at a first equal pitch P1 in the substrate transport container C placed on the load port 2A, and transfers them to the substrate holding structure 3A1 located at the first position of the transfer unit 3A for unprocessed substrates.

The arrangement pitch of the substrates W handed over to the substrate holding structure 3A1 is converted from a first equal pitch P1 to a second equal pitch P2 (e.g., P1>P2) by the pitch change mechanism 3A13. The substrate holding structure 3A1 is then moved to the second position by the movement mechanism 3A2. The arrangement pitch may be converted while the substrate holding structure 3A1 is moving from the first position to the second position, or after it has moved to the second position.

The second substrate transport robot 3C then takes out 25 substrates from the substrate holding structure 3A1 all at once and transfers the substrates to the rotor 18 of the liquid processing unit 10 designated by a predetermined processing schedule. Please refer to FIG. 6 and its explanation for the transfer of substrates between the second substrate transport robot 3C and the rotor 18, and the formation of the processing chamber 11C by the movement of the processing vessel 11. Next, the substrates are subjected to a series of processes (chemical processing, rinsing processing, drying processing, etc.) in the liquid processing unit 10.

After processing is completed, the second substrate transport robot 3C removes all 25 substrates from the rotor 18 of the liquid processing unit 10, which is in an upright position, and delivers them to the substrate holding structure 3B1 located at the second position of the delivery unit 3B for processed substrates. The arrangement pitch of the substrates W delivered to the substrate holding structure 3B1 is converted from the second uniform pitch P2 to the first uniform pitch P1 by the pitch change mechanism 3B13. The substrate holding structure 3B1 is then moved to the first position by the movement mechanism 3B2. The arrangement pitch may be converted while the substrate holding structure 3B1 is moving from the second position to the first position, or after it has moved to the first position.

Next, the first substrate transport robot 2C removes all 25 processed substrates W from the substrate holding structure 3B1 in the first position and stores them back in the substrate transport container C.

In the above description, the first substrate transport robot 2C and the second substrate transport robot 3C transport 25 substrates W (the specified number of substrates to be processed) at a time, but this is not limited to this, and they may transport, for example, five substrates W at a time (a part of the specified number of substrates to be processed, but multiple substrates). In this case, the transport time will be longer, but the structure of the end effector can be simplified.

[Second Example of Substrate Flow]
Next, a description will be given of the flow of substrates W in the substrate processing system when the rotor 18 of the liquid processing unit 10 does not have a posture changing function, in other words, when the rotor 18 is fixed in a horizontal posture. In this case, the transfer units 3A, 3B are of the type having posture changing mechanisms 3A3, 3B3 (having the configurations shown in Figs. 15 and 16), and a second substrate transport robot 3C of the type that transports substrates in a vertical posture (e.g., having the configuration shown in Fig. 17) is used.

The provision of a posture changing function to the rotor 18 of the liquid processing unit 10 itself increases the manufacturing cost of the liquid processing unit 10. In addition, when the rotor 18 is provided with a posture changing function, the movable members of each liquid processing unit 10 are required to have higher precision in order to align the processing container 11 and the rotor 18 (for example, to seal between the two), which also increases the manufacturing cost of the liquid processing unit 10. For this reason, when the substrate processing system 1 includes a large number of liquid processing units 10, it is more advantageous from a cost perspective to provide the posture changing function of the substrate W to equipment other than the liquid processing unit 10 (the transfer units 3A, 3B or the second substrate transport robot 3C). When the substrate processing system 1 includes a small number of liquid processing units 10, it may be preferable from an equipment cost perspective to provide the posture changing function to the rotor 18 of the liquid processing unit 10.

In this second example, the transport of the substrate W by the first substrate transport robot 2C from the substrate transport container C on the load port 2A to the substrate holding structure 3A1 of the transfer unit 3A for unprocessed substrates is the same as in the first example.

As in the first example, in the transfer unit 3A, when the substrate holding structure 3A1 is in the first position, or after it has moved to the second position, or during its movement from the first position to the second position, the pitch change mechanism 3A13 converts the arrangement pitch of the substrates W to a second equal pitch P2 (e.g., P1>P2).

Furthermore, in this second example, the posture conversion mechanism 3A3 of the transfer unit 3A rotates the substrate holding structure 3A1 when the substrate holding structure 3A1 is in the first position, or after it has moved to the second position, or during its movement from the first position to the second position, to convert the posture of the substrate W from a horizontal posture to a vertical posture.

Next, the second substrate transport robot 3C collectively removes the 25 substrates W in a vertical position from the substrate holding structure 3A1 in the second position. The second substrate transport robot 3C is positioned directly above the substrates W held by the substrate holding structure 3A1, and then descends. At this time, the substrate holders 3C61 (see FIG. 17) of the end effector 3C6 are inserted into the gaps between the adjacent substrates W held by the substrate holding structure 3A1. Then, by moving the end effector 3C6 slightly in the arrangement direction of the substrates W, each substrate holder 3C61 is positioned so that the suction pads 3C62 come into contact with the peripheral portion of the substrate W (preferably the peripheral portion of the back surface) or are adjacent to the substrate W with a small gap therebetween. Next, the suction pads 3C62 suction the substrates W. Next, the end effector 3C6 rises, and the substrates W are removed from the substrate holding structure 3A1.

The second substrate transport robot 3C positions the end effector 3C6 holding the substrate W directly above the rotor 18 of the liquid processing unit 10. At this time, the rotor 18 is in an angular position such that the two movable holding rods 183 are located on the upper side, and the two movable holding rods 183 are in a release position. From this state, the end effector 3C6 descends and inserts the substrate W into the substrate holding groove of the fixed holding rod 182 of the rotor 18, and then releases the suction of the substrate W by the suction pad 3C62. Next, the end effector 3C6 moves slightly in the arrangement direction of the substrate W to separate the substrate holder 3C61 from the substrate W. Next, the end effector 3C6 rises and retreats from the rotor 18.

The processing vessel 11 then slides to form the processing chamber 11C, and a series of processes are performed on the substrate W.

When the processing of the substrate W is complete, the second substrate transport robot 3C removes the substrate W from the rotor 18 of the liquid processing unit 10 and transfers the substrate W to the transfer unit 3B for processed substrates by performing the above procedure in reverse. In the transfer unit 3B, the arrangement pitch of the substrates W is converted to the first uniform pitch P1, the substrates W are placed in a horizontal position, and the substrate holding structure 3A1 is moved to the first position. Next, the first substrate transport robot 2C removes all 25 processed substrates W from the substrate holding structure 3B1 at the first position and stores them back in the substrate transport container C.

In the second example above, the first substrate transport robot 2C and the second substrate transport robot 3C may transport 25 substrates W at once, or may transport, for example, five substrates at a time.

[Other Modifications]
As described above, the end effector of the second substrate transport robot 3C may be provided with a pitch changing function, in which case the pitch change mechanisms 3A13, 3B3 are omitted from the delivery units 3A, 3B. The second substrate transport robot 3C changes the arrangement pitch of the substrates W held by the end effector when transporting substrates W between the delivery units 3A, 3B and the rotor 18.

As described above, the second substrate transport robot 3C may be provided with a posture changing mechanism that changes the posture of the end effector 3C6 (see FIG. 18). In this case, the posture changing mechanisms 3A3, 3B4 are omitted from the transfer units 3A, 3B, and a posture changing mechanism is omitted from the rotor 18 of the liquid processing unit 10. The second substrate transport robot 3C changes the posture of the substrate W held by the end effector when transporting the substrate W between the transfer units 3A, 3B and the rotor 18.

When the rotor 18 of the liquid processing unit 10 can be changed in position, or when the second substrate transport robot 3C is provided with an end effector position change function, the transfer unit 3A (3B) is not provided with a position change function. In this case, the frame 3A11 (3B11) of the substrate holding structure 3A1 (3B1) of the transfer unit 3A (3B) is open at the front and back so that the substrate W can be loaded and unloaded from both the front and back (only the front is open in the configuration examples shown in Figures 15 and 16).

According to the embodiment of the substrate processing system 1 described above, the substrate processing system 1 is provided with at least two levels (three levels L1, L2, L3 in the illustrated example) at different heights, and two or more of the liquid processing units 10 are arranged on each of the at least two levels. At least one of the liquid processing units 10 (two in the illustrated example) is arranged above or below (above in the illustrated example) the transfer units 3A, 3B (substrate transfer section). This allows more liquid processing units 10 to be arranged for the same footprint area, thereby improving the processing throughput of the entire substrate processing system 1.

According to the embodiment of the substrate processing system 1 described above, in each of the floors L2 and L3, a plurality of liquid processing units 10 (four in the illustrated example) are provided to surround the second substrate transport robot 3C. The arrangement direction of the substrate W on the rotor 18 of each liquid processing unit 10 coincides with the substrate loading direction of the second substrate transport robot 3C relative to the rotor 18. This eliminates the need for the arm 3C5 of the second substrate transport robot 3C to perform complex movements when the second substrate transport robot 3C loads and unloads the substrate from each liquid processing unit 10. In other words, when transferring the substrate W between the second substrate transport robot 3C and a certain liquid processing unit 10, the height of the arm 3C5 of the second substrate transport robot 3C is adjusted to the height position of the liquid processing unit 10, and the arm 3C5 of the second substrate transport robot 3C is rotated around the vertical axis Ax1 to face the liquid processing unit 10. The above operation is common to any liquid processing unit 10 to which the substrate W is to be transferred. In addition, the above arrangement can reduce the number of motion axes of the second substrate transport robot 3C. That is, it is sufficient for the second substrate transport robot 3C to have only the Z axis for raising and lowering the arm 3C5, the θ axis for rotating the arm 3C5 around the Z axis, and the horizontal axis (H axis) for moving the arm 3C5 forward and backward in a horizontal plane perpendicular to the Z axis (however, it may have more motion axes). This can reduce the footprint area required for the operation of the second substrate transport robot 3C. This can also reduce the interval between the second substrate transport robot 3C and each liquid processing unit 10 (as viewed from above). This can also reduce the density of the liquid processing units 10 in one story, thereby reducing the footprint area of the substrate processing system 1. Furthermore, by arranging multiple liquid processing units 10 (four in the illustrated example) on one floor so that they face directly toward the second substrate transport robot 3C and surround the second substrate transport robot 3C, empty spaces are generated between the liquid processing units 10, but this space can be effectively used to place various equipment for providing utilities.

In other words, according to the embodiment of the substrate processing system 1 described above, the throughput per footprint area (number of substrates processed per unit time) can be improved.

The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

REFERENCE SIGNS LIST 1 Substrate processing system 10 Liquid processing unit 18 Substrate holder 2A1 Container placement unit 2C First substrate transfer device
3A, 3B Substrate transfer section 3C First substrate transfer device L1, L2, L3 Level

Claims (9)

a plurality of batch-type liquid processing units, each of which has a substrate holding part for holding a plurality of substrates in parallel with each other, and is configured to simultaneously perform liquid processing on the plurality of substrates held on the substrate holding part;
a container placement section on which a substrate transport container for storing a plurality of substrates is placed;
At least one substrate transfer section having a substrate holding structure that holds a plurality of substrates parallel to each other;
a first substrate transport device configured to transport a substrate between a substrate transport container placed on the container placement section and the substrate transfer section;
a second substrate transfer device configured to simultaneously transfer a plurality of substrates between the substrate holding structure of the substrate transfer section and the substrate holding section of the liquid processing unit;
A substrate processing system comprising:
the substrate processing system has at least two stories at different heights, and two or more of the liquid processing units are arranged on each story;
At least one of the liquid processing units is disposed above or below the substrate transfer section. 2. The substrate processing system of claim 1, wherein the second substrate transport device is configured to simultaneously transport a number of substrates between the substrate transfer section and the liquid processing unit that is equal to a specified processing number, which is the number of substrates held by the substrate holding section when the liquid processing unit processes the substrates, or to simultaneously transport a number of substrates less than the specified processing number between the substrate transfer section and the liquid processing unit. 3. The substrate processing system of claim 1, wherein the substrate transfer section has a moving mechanism that moves the substrate holding structure between a first position where the substrate can be transferred between the first substrate transport device and a second position where the substrate can be transferred between the second substrate transport device. 4. The substrate processing system according to claim 3, wherein the substrate transfer section has a posture changing mechanism that changes a posture of the substrate held by the substrate holding structure between a horizontal posture and a vertical posture at the first position, the second position, or a third position between the first position and the second position. 5. The substrate processing system of claim 1, wherein the substrate transfer section has a pitch conversion mechanism that converts an arrangement pitch of the substrates held by the substrate holding structure between a first uniform pitch and a second uniform pitch, the substrate transport container is configured to hold a plurality of substrates at the first uniform pitch, and the substrate holding section of the liquid processing unit is configured to hold a plurality of substrates at the second uniform pitch. 6. The substrate processing system according to claim 1, further comprising a first substrate transfer part and a second substrate transfer part as the at least one substrate transfer part, the first substrate transfer part being disposed above the second substrate transfer part. the substrate transport pod is configured to store a plurality of substrates in a horizontal position, parallel to one another, and at a first equal pitch;
7. The substrate processing system according to claim 1, wherein the first substrate transport device is configured to be able to simultaneously take out a plurality of substrates in a horizontal position from the substrate transport pod. The substrate processing system according to any one of claims 1 to 7, wherein each of the liquid processing units is installed such that the arrangement direction of the substrates by the substrate holder coincides with the direction of transfer of the substrates from the second substrate transfer device to each of the liquid processing units. 9. The substrate processing system according to claim 1 , wherein an area in the substrate processing system in which the plurality of liquid processing units are arranged and an area in which equipment supplying power to the plurality of liquid processing units is arranged are adjacent to each other.

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