JP7590141B2 - Sputtering apparatus and film formation method - Google Patents

Description

The present invention relates to a sputtering apparatus and a film formation method for forming a thin film on a substrate by sputtering.

In a sputtering device, a technique is known in which sputtering is performed using a cylindrical target (also called a rotary cathode) that rotates during sputtering. In such a technique, foreign matter accumulates over time on the non-eroded portions of the target that do not contribute to sputtering (usually both ends). Such foreign matter can cause abnormal discharges and foreign matter to get into the film formation section, so it is necessary to open the chamber and remove it manually. Therefore, the task of removing the foreign matter is laborious and time-consuming.

JP 2013-234375 A JP 2019-94548 A

The object of the present invention is to provide a sputtering apparatus and a film formation method that improves the workability of removing foreign matter from a target and shortens the removal time.

In order to solve the above problems, the sputtering apparatus of the present invention comprises:
A sputtering apparatus for forming a thin film on a substrate by sputtering using constituent atoms of a cylindrical target that rotates during sputtering, comprising:
a chamber in which the substrate is disposed;
a moving mechanism that moves the target between a facing region facing the substrate and a non-facing region not facing the substrate within the chamber;
A partition wall separating the non-facing region and the facing region;
a removal member that is disposed in the non-facing region on the opposite side of the partition wall from the facing region and that removes foreign matter deposited on the target while the target is moved to the non-facing region;
The present invention is characterized by comprising:

According to the present invention, the removal member removes foreign matter deposited on the target, making it possible to remove the foreign matter without opening the chamber.

As described above, the present invention can improve the workability of removing foreign matter from a target and shorten the removal time.

1 is a schematic diagram showing an internal configuration of a sputtering apparatus according to a first embodiment of the present invention, as viewed from above; 1 is a schematic cross-sectional view of an internal configuration of a sputtering apparatus according to a first embodiment of the present invention; 1 is a schematic cross-sectional view of an internal configuration of a sputtering apparatus according to a first embodiment of the present invention; FIG. 2 is a schematic configuration diagram of a target unit according to the first embodiment of the present invention. FIG. 11 is a schematic cross-sectional view of the internal configuration of a sputtering apparatus according to a second embodiment of the present invention, focusing on characteristic configurations. FIG. 11 is a schematic cross-sectional view of the internal configuration of a sputtering apparatus according to a third embodiment of the present invention, focusing on characteristic configurations. FIG. 1 is a schematic cross-sectional view illustrating an example of an electronic device.

The following describes in detail the embodiments of the present invention with reference to the drawings. However, unless otherwise specified, the dimensions, materials, shapes, and relative positions of the components described in the embodiments are not intended to limit the scope of the present invention.

Example 1
A sputtering apparatus and a film forming method according to a first embodiment of the present invention will be described with reference to Figures 1 to 4. Figure 1 is a schematic diagram of the internal configuration of the sputtering apparatus according to the first embodiment of the present invention, as viewed from above. Figure 2 is a cross-sectional view as viewed in the direction of arrow V1 in Figure 1. Figure 3 is a cross-sectional view as viewed in the direction of arrow V2 in Figure 1. Figure 4 is a schematic diagram of a target unit according to the first embodiment of the present invention, where Figure 4(a) is a schematic diagram of the target unit and its vicinity as viewed from the front, and Figure 4(b) is a cross-sectional view taken along line AA in Figure 4(a).

<Overall configuration of sputtering device>
The overall configuration of the sputtering apparatus according to this embodiment will be described with reference to Figures 1 to 3. The sputtering apparatus 1 according to this embodiment includes a chamber 10 inside which a vacuum atmosphere is created, a target unit 100 provided in the chamber 10, and a driving device 200 having a moving mechanism 230 for moving the target unit 100.

The chamber 10 is equipped with a substrate holding mechanism 11 that holds the substrate P, and a mask holding mechanism 12 that holds the mask M. These holding mechanisms keep the substrate P and mask M stationary during the film formation operation (sputtering operation). The chamber 10 is an airtight container, and its interior is maintained in a vacuum state (or reduced pressure state) by an exhaust pump 20. By opening the gas supply valve 30 and supplying gas into the chamber 10, the gas atmosphere (or pressure zone) can be appropriately changed to an appropriate gas atmosphere for the process. The entire chamber 10 is electrically grounded by a ground circuit 40.

The driving device 200 includes an atmospheric box 210, a pair of guide rails 221, 222 that guide the movement direction of the atmospheric box 210, a moving mechanism 230 that moves the atmospheric box 210, and an atmospheric arm 240 that moves with the movement of the atmospheric box 210. The atmospheric box 210 is hollow inside and is configured to communicate with the outside of the chamber 10 through the inside of the atmospheric arm 240. Therefore, the inside of the atmospheric box 210 is exposed to the atmosphere. By adopting such a configuration, wiring 51, 52 connected to a power source 50 provided outside the chamber 10 can be connected to the target unit 100. The target unit 100 is fixed to the atmospheric box 210.

The atmospheric box 210 is configured to reciprocate along a pair of guide rails 221, 222 by a moving mechanism 230. The moving mechanism 230 employs a ball screw mechanism, and includes a ball screw 231 and a drive source 232 such as a motor that rotates the ball screw 231. However, the drive mechanism for reciprocating the atmospheric box 210 is not limited to the ball screw mechanism, and various known techniques such as a rack-and-pinion mechanism may be employed. When a rack-and-pinion mechanism is employed for the moving mechanism 230, it may be provided in the conveying guide portion.

The atmospheric arm 240 is provided to arrange wiring 51, 52 connected to a power source 50 provided outside the chamber 10 in the cavity of the moving atmospheric box 210. That is, the atmospheric arm 240 is configured to have a hollow interior and to move in accordance with the movement of the atmospheric box 210. More specifically, the atmospheric arm 240 includes a first arm 241 and a second arm 242. One end of the first arm 241 is configured to be rotatable relative to the bottom plate of the chamber 10. One end of the second arm 242 is rotatably supported relative to the other end of the first arm 241, and the other end is rotatably supported relative to the atmospheric box 210.

The driving device 200 configured as described above makes it possible to move the target unit 100 fixed to the atmospheric box 210 back and forth together with the atmospheric box 210. This allows the target unit 100 to operate during at least one of the forward and return movements, thereby performing a film formation operation (sputtering) on the substrate P. Therefore, even when forming a film on a large substrate P, the driving device 200 can perform a film formation operation while moving the target unit 100, thereby continuously forming a thin film from one end of the substrate P to the other end.

<Target unit>
With reference to FIG. 4, an example of a target unit 100 applicable to the sputtering device 1 according to this embodiment will be described. The target unit 100 includes a target 110, a support block 120 and an end block 130 that support both ends of the target 110. In this embodiment, two targets 110 are provided, and the support block 120 and the end block 130 that support both ends of the two targets 110 are also provided for each of the two targets 110. However, in the sputtering device according to the present invention, the number of targets is not limited. The target 110 is a cylindrical member that rotates during sputtering, and is also called a rotary cathode. The support block 120 and the end block 130 are fixed to the upper surface of the atmospheric box 210. The target 110 includes a cylindrical target body 111 and a cathode 112 that is an electrode disposed on the inner circumference of the target body 111. The target 110 is rotatably supported by the support block 120 and the end block 130, and is configured to rotate during sputtering by a drive source such as a motor (not shown) provided in the end block 130. In the case of a magnetron sputtering type sputtering device, a magnet is provided inside the cathode 112 to generate a magnetic field (leakage magnetic field) between the target 110 and the substrate P.

In the target unit 100 configured as above, a certain voltage or more is applied between the target 110 and the chamber 10, which is the anode, to generate plasma between them. Then, positive ions in the plasma collide with the target 110, and particles of the target material are emitted from the target 110 (target body 111). The particles emitted from the target 110 repeatedly collide with each other, and neutral atoms of the target material among the emitted particles are deposited on the substrate P. As a result, a thin film is formed on the substrate P by the constituent atoms of the target 110. In addition, in the case of the magnetron sputtering method, the above-mentioned leakage magnetic field can concentrate the plasma in a predetermined area between the target 110 and the substrate P. As a result, sputtering is performed efficiently, and the deposition rate of the target material on the substrate P can be improved. Furthermore, in the target unit 100 according to this embodiment, the target 110 is configured to rotate during sputtering. As a result, the consumption area (erosion area) of the target 110 is not concentrated in one area, and the utilization efficiency of the target 110 can be improved.

The target unit 100 including the target 110 configured as described above is transported together with the atmospheric box 210 by the driving device 200 including the moving mechanism 230. In FIG. 1, the range S0 indicates the moving range of the target 110, and the target 110 is configured to move from the facing region S2 facing the substrate P to the non-facing region S1 not facing the substrate P in the chamber 10. Sputtering is performed while the target 110 moves through the facing region S2. Note that, for example, by providing a partition wall 60 near the boundary between the non-facing region S1 and the facing region S2 as shown in FIG. 2, the target 110 and the substrate P can be prevented from facing each other in the non-facing region S1 without increasing the moving range of the target 110. In other words, a thin film can be prevented from being formed on the substrate P while the target 110 is located in the non-facing region S1.

In the sputtering apparatus 1 according to this embodiment, a removal device 300 is provided in the chamber 10 to remove foreign matter deposited on non-erosion portions of the target 110 that do not contribute to sputtering. The removal device 300 includes a drive source 310 having a motor or the like, a holding member 320 configured to rotate within a certain range by the drive source 310, and foreign matter removal rollers 331, 332 as removal members rotatably supported by the holding member 320. Suitable examples of materials for the foreign matter removal rollers 331, 332 include PEEK, ceramic materials, rubber materials such as Viton, and acrylic adhesives.

The removal device 300 configured as described above can remove foreign matter accumulated on the non-erosion portion of the target 110 by the foreign matter removal rollers 331, 332 while the target 110 is disposed in the non-facing region S1. More specifically, when removing foreign matter, while the two targets 110 are rotating, the drive source 310 rotates the holding member 320, and the foreign matter removal rollers 331, 332 contact one and the other of the two targets 110, respectively. The foreign matter removal rollers 331, 332 are configured to rotate in response to the rotation of the respective targets 110, and the foreign matter accumulated on the target 110 is scraped off at the contact portion between the target 110 and the foreign matter removal rollers 331, 332.

In addition, the foreign matter removal rollers 331, 332 are configured to rotate slightly later (at a slightly slower rotation speed) than the rotation of the target 110, so that friction can be generated between the surface of the foreign matter removal rollers 331, 332 and the surface of the target 110, and foreign matter can be effectively removed. In addition, the foreign matter removal rollers 331, 332 can be configured to actively rotate using a motor or the like, rather than being driven by the rotation of the target 110. In this case, the foreign matter removal effect can be improved by making the direction of movement of the target 110 and the direction of movement of the foreign matter removal rollers 331, 332 reverse at the contact portion between the target 110 and the foreign matter removal rollers 331, 332. Furthermore, the foreign matter removal effect can be improved by providing multiple irregularities on the surface of the foreign matter removal rollers 331, 332.

After the foreign matter removal operation, the drive source 310 rotates the holding member 320 in the opposite direction, and the foreign matter removal rollers 331 and 332 are separated from the two targets 110. In this way, the removal device 300 is a device equipped with a contact/separation mechanism that moves the foreign matter removal rollers 331 and 332 toward and away from the target 110. Note that in Figures 1 and 2, the target 110 and the foreign matter removal rollers 331 and 332 are shown with solid lines when they are separated from each other, and with dotted lines when they are in contact with each other.

In the target 110 according to this embodiment, both ends in the direction of the central axis of rotation are non-erosion parts. When removing foreign matter, the foreign matter removal rollers 331, 332 come into contact with the non-erosion parts at both ends, thereby removing the foreign matter that has accumulated in the non-erosion parts at both ends.

<Film formation method>
The film forming method (sputtering) by the sputtering device 1 will be described in the order of steps. First, in the chamber 10, the driving device 200 moves the target 110 in the facing region S2 while performing sputtering. When removing foreign matter, the driving device 200 moves the target 110 to the non-facing region S1. After that, in the non-facing region S1, foreign matter deposited on non-erosion parts of the two targets 110 that do not contribute to sputtering is removed by foreign matter removal rollers 331, 332 provided in the removal device 300 arranged in the chamber 10. The series of operations is performed by a control device (not shown) that controls the operation of the sputtering device 1. However, the operation of rotating the holding member 320 in the removal device 300 can also be configured to be manually performed by an operator from outside the chamber 10. In addition, the removal of foreign matter may be performed every time the target 110 makes one round trip, or every time it makes a predetermined number of round trips, and the frequency of removal can be set appropriately.

According to the sputtering device 1 of this embodiment, foreign matter accumulated on non-erosion parts of the target 110 is removed by foreign matter removal rollers 331, 332 as removal members. This makes it possible to remove the foreign matter without opening the chamber 10. This improves the workability of removing the foreign matter from the target 110 and shortens the removal time.

Example 2
5 shows a second embodiment of the present invention. In this embodiment, the configuration of the target and the removal device is different from that of the first embodiment. Other configurations and functions are the same as those of the first embodiment, so the same components are given the same reference numerals and the description thereof will be omitted as appropriate.

Figure 5 is a schematic cross-sectional view of the internal configuration of a sputtering device according to Example 2 of the present invention, focusing on characteristic configurations, and focuses on configurations that differ from Example 1, and omits configurations that are the same as Example 1, with the exception of some configurations.

In the sputtering device 1A according to this embodiment, the target 110A constituting the target unit 100A has multiple target pieces 111A arranged in a line along the central axis of rotation.

The removal device 300A according to this embodiment includes a driving source 310A including a motor or the like, a holding member 320A configured to rotate within a certain range by the driving source 310A, and a foreign matter removal roller 330A as a removal member rotatably supported by the holding member 320A. The foreign matter removal roller 330A includes a removal section 331A that removes foreign matter accumulated in the non-erosion parts at both ends of the target 110A in the direction of the central axis of rotation, and an auxiliary removal section 332A that removes foreign matter accumulated in the gaps 112A between adjacent target pieces 111A in a plurality of target pieces 111A.

As described above, when a target 110A including a plurality of target pieces 111A is employed, the foreign matter removing roller 330A described in this embodiment can be used to remove foreign matter accumulated in the gaps 112A between adjacent target pieces 111A. Note that the same effects as those of the first embodiment can be obtained in this embodiment as well.

Example 3
6 shows a third embodiment of the present invention. In this embodiment, the configuration of the removal device is different from that of the first embodiment. Other configurations and functions are the same as those of the first embodiment, so the same components are given the same reference numerals and the description thereof will be omitted as appropriate.

Figure 6 is a schematic cross-sectional view of the internal configuration of a sputtering device according to Example 3 of the present invention, focusing on characteristic configurations, and focuses on configurations that differ from Example 1, and omits configurations that are the same as Example 1, with the exception of some configurations.

In the above embodiment, the removal device 300 is disposed outside the movement range S0 of the target 110, and the holding member 320 that holds the foreign matter removal rollers 331 and 332 is configured to rotate around an axis parallel to the central axis of rotation of the target 110. In contrast, in the sputtering device 1B of this embodiment, the removal device 300B is configured to be provided at positions on both sides of the target 110 with the target 110 positioned in the non-facing region S1. The removal device 300B of this embodiment also includes a driving source 310B equipped with a motor or the like, a holding member 320B configured to rotate within a certain range by the driving source 310B, and a foreign matter removal roller 330B as a removal member rotatably supported by the holding member 320B. The holding member 320B of this embodiment is configured to rotate around an axis parallel to the reciprocating movement direction of the target 110.

Even when the removal device 300B configured in this manner is adopted, the same effects as those of the first embodiment can be obtained.

<Electronic device manufacturing equipment>
The sputtering apparatuses 1, 1A, and 1B shown in the above embodiments can be used as manufacturing apparatuses for manufacturing electronic devices. Hereinafter, the manufacturing apparatuses for electronic devices and electronic devices manufactured by the manufacturing apparatuses for electronic devices will be described with reference to FIG. 7. The sputtering apparatuses 1, 1A, and 1B can be used to deposit and form thin films (organic films, metal films, metal oxide films, etc.) on a substrate P (including those on which a laminate is formed on the surface of the substrate P) in the manufacture of various electronic devices such as semiconductor devices, magnetic devices, and electronic components, and optical components. More specifically, the sputtering apparatuses 1, 1A, and 1B are preferably used in the manufacture of electronic devices such as light-emitting elements, photoelectric conversion elements, and touch panels. Among them, the sputtering apparatuses 1, 1A, and 1B according to this embodiment are particularly preferably applicable in the manufacture of organic light-emitting elements such as organic EL (ElectroLuminescence) elements, and organic photoelectric conversion elements such as organic thin-film solar cells. The electronic device also includes a display device (e.g., an organic EL display device) or a lighting device (e.g., an organic EL lighting device) equipped with a light-emitting element, and a sensor (e.g., an organic CMOS image sensor) equipped with a photoelectric conversion element.

An example of an organic EL element manufactured by an electronic device manufacturing apparatus is shown in FIG. 7. In the illustrated organic EL element, an anode F1, a hole injection layer F2, a hole transport layer F3, an organic light emitting layer F4, an electron transport layer F5, an electron injection layer F6, and a cathode F7 are formed on a substrate P in this order. The sputtering apparatuses 1, 1A, and 1B according to this embodiment are particularly suitable for forming a laminated coating of a metal film or a metal oxide film used for an electron injection layer or an electrode (cathode or anode) on an organic film by sputtering. In addition, it is not limited to film formation on an organic film, and laminated films can be formed on various surfaces as long as the combination of materials that can be formed by sputtering, such as metal materials and oxide materials, is used.

(others)
In each of the above embodiments, the removal member for removing foreign matter is a foreign matter removing roller. However, the removal member according to the present invention is not limited to a foreign matter removing roller, and various configurations such as a brush-like member may be adopted.

REFERENCE SIGNS LIST 1 sputtering device 10 chamber 100 target unit 110 target 200 driving device 230 moving mechanism 300 removal device 331, 332 foreign matter removal roller S1 non-facing region S2 facing region

Claims (9)

A sputtering apparatus for forming a thin film on a substrate by sputtering using constituent atoms of a cylindrical target that rotates during sputtering, comprising:
a chamber in which the substrate is disposed;
a moving mechanism that moves the target between a facing region facing the substrate and a non-facing region not facing the substrate within the chamber;
A partition wall separating the non-facing region and the facing region;
a removal member that is disposed in the non-facing region on the opposite side of the partition wall from the facing region and that removes foreign matter deposited on the target while the target is moved to the non-facing region;
A sputtering apparatus comprising: The target includes a plurality of target pieces arranged in a direction of a rotational center axis of the target,
2. The sputtering apparatus according to claim 1 , wherein the removal member includes an auxiliary removal portion that removes foreign matter that accumulates in gaps between adjacent target pieces among the plurality of target pieces. A sputtering apparatus for forming a thin film on a substrate by sputtering using constituent atoms of a cylindrical target that rotates during sputtering, comprising:
a chamber in which the substrate is disposed;
a moving mechanism that moves the target between a facing region facing the substrate and a non-facing region not facing the substrate within the chamber;
a removal member that removes foreign matter deposited on the target while the target is moved to the non-facing region;
Equipped with
The target includes a plurality of target pieces arranged in a direction of a rotational center axis of the target,
A sputtering apparatus characterized in that the removal member includes an auxiliary removal portion that removes foreign matter that accumulates in gaps between adjacent target pieces among the plurality of target pieces . 4. The sputtering apparatus according to claim 1 , 2 or 3 , wherein, during removal of foreign matter, the target is rotated and the removal member is in contact with the target. 5. The sputtering apparatus according to claim 4 , wherein the removing member is a roller that rotates in accordance with the rotation of the target. 6. The sputtering apparatus according to claim 1, further comprising a mechanism for moving the removal member toward and away from the target. The sputtering device according to any one of claims 1 to 6 , characterized in that both ends of the target in the direction of the rotation center axis are non-erosion portions, and when removing foreign matter, the removal member comes into contact with the non-erosion portions at both ends. Using the sputtering apparatus according to any one of claims 1 to 7,
A film formation method for forming a thin film on a substrate by sputtering using constituent atoms of a cylindrical target that rotates during sputtering, comprising the steps of:
performing sputtering in a chamber while moving the target within a facing region facing the substrate;
moving the target to a non-facing region in the chamber that does not face the substrate;
removing foreign matter deposited on the target in the non-facing region by a removal member provided in the chamber;
A film forming method comprising the steps of: The film forming method according to claim 8 , wherein the foreign matter is removed by bringing the removal member into contact with the target while rotating the target.

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