JP7590224B2 - Cultivation facilities and cultivation methods - Google Patents

Description

This invention particularly relates to cultivation facilities and methods for Phalaenopsis orchids.

Conventional methods for cultivating Phalaenopsis orchid include, for example, Patent Document 1 (JP Patent Publication No. 2016-202108).

Patent Document 1 discloses a cultivation method in which artificial light is irradiated in addition to sunlight to match the growth period of Phalaenopsis (Moth Orchid).

JP 2016-202108 A

Patent Document 1 discloses that Phalaenopsis orchids can be produced in a relatively short time by cultivating them under specified temperature and light conditions. However, for example, it takes as long as four months for the plant to fully grow during the flowering induction period, and further shortening of this period is desirable.

To solve this problem, the present invention aims to provide a cultivation facility and a cultivation method that can promote the growth of Phalaenopsis orchid by providing optimal temperature and light conditions during the plant's growth period.

The cultivation facility according to the present invention is a cultivation facility for Phalaenopsis orchid, which grows through a seedling growth period, a flower stem growth period, a flowering period, and an acclimation period. The cultivation facility includes a low-temperature room in which Phalaenopsis orchid is cultivated during the flower stem growth period, a cultivation room in which Phalaenopsis orchid is cultivated during the flowering period, and an acclimation room in which Phalaenopsis orchid is cultivated during the acclimation period. The low-temperature room includes a first irradiation means for irradiating artificial light including far-red light during the light period, and a first temperature adjustment means for adjusting the cultivation temperature during the light period and the dark period. The cultivation room includes a second irradiation means for irradiating artificial light not including far-red light during the light period, and a second temperature adjustment means for adjusting the cultivation temperature to be relatively higher than that of the low-temperature room.

Preferably, the first irradiation means is set so that the ratio of [total amount of artificial light]/[amount of far-red light] is 4.5 to 15.0.

Preferably, the Phalaenopsis orchids are arranged in multiple tiers in the cold room and the cultivation room.

Preferably, the acclimatization chamber includes a third irradiation means for irradiating artificial light not including far-red light during the light period, and a third temperature adjustment means for adjusting the cultivation temperature during the light period to 20 to 30°C and the cultivation temperature during the dark period to 15 to 20°C.

Preferably, the acclimatization chamber includes a means for capturing sunlight.

The cultivation method of the present invention is a cultivation method for cultivating Phalaenopsis orchid in a cultivation facility, which grows through a seedling growth period, a flower stalk growth period, a flowering period, and an acclimation period. The cultivation method comprises a step of cultivating Phalaenopsis orchid in a low-temperature room during the flower stalk growth period, a step of cultivating Phalaenopsis orchid in a flowering period in a cultivation room, and a step of cultivating Phalaenopsis orchid in an acclimation period in an acclimation room. In the step of cultivating in a low-temperature room, the cultivation method comprises a step of adjusting the temperature to 21-24°C during the light period, irradiating artificial light including far-red light so that the ratio of [total light amount of artificial light]/[light amount of far-red light] is 4.5-15.0, and a step of adjusting the temperature to 15-18°C during the dark period.

Preferably, the step of cultivating in a cultivation room further includes a step of adjusting the temperature to 24-27°C during the light period and irradiating with artificial light that does not contain far-red light, and a step of adjusting the temperature to 19-22°C during the dark period.

Preferably, the cultivation method further includes a step of adjusting the temperature to 20-30°C during the light period and irradiating artificial light that does not contain far-red light in the step of cultivating in an acclimation room, and a step of adjusting the temperature to 15-20°C during the dark period.

Preferably, the cultivation method further includes a step of cultivating the plants in an acclimation room under the same illumination conditions as outdoors.

The cultivation facility and cultivation method of the present invention can promote the growth of Phalaenopsis orchid by providing optimal temperature and illumination conditions for the Phalaenopsis orchid's growth period.

1 is a block diagram showing a cultivation device, a cultivation method, and a cultivation facility according to an embodiment of the present invention. FIG. 1 is a schematic diagram showing a cultivation apparatus according to an embodiment of the present invention. 1A is a graph showing the results of experimental examples investigating the light quality suitable for flower stalk growth, where (a) shows the results of experimental example 1, (b) shows the results of experimental example 2, (c) shows the results of experimental example 3, and (d) shows the results of experimental example 4. 1 is a graph showing the results of an experiment investigating the effect of promoting the growth of flower stalks. FIG. 2 is a functional block diagram showing the functional configuration of a cultivation device including a discrimination means according to a first embodiment. 10 is a flowchart showing a control method for a cultivation apparatus including a discrimination means according to a first embodiment. FIG. 11 is a functional block diagram showing the functional configuration of a cultivation device including a discrimination means according to a second embodiment of the present invention. 13 is a flowchart showing a control method for a cultivation apparatus including a discrimination means according to a second embodiment.

The embodiment of the present invention will be described in detail with reference to the drawings. Note that the same or corresponding parts in the drawings are given the same reference numerals and their description will not be repeated.

(How to grow Phalaenopsis orchids)
A cultivation method according to an embodiment of the present invention will be described with reference to Fig. 1. The cultivation method according to this embodiment is a method for cultivating Phalaenopsis orchids that grow through a seedling growth period S1, a flower stem growth period S2, a flowering period S3, and an acclimation period S4. Phalaenopsis orchids can be broadly classified into three types based on the size of their petals: mini (petal diameter 3-5 cm), midi (petal diameter 5-9 cm), and large (petal diameter 10 cm or more). In this embodiment, a cultivation method for mini Phalaenopsis orchids will be described as an example, but is not limited to this.

The probability of natural pollination in Phalaenopsis is extremely low, and it takes more than two years of cultivation for a single plant to flower. For this reason, from the standpoint of time and cost efficiency, the most common industrial cultivation method is to use meristem seedlings. The seedling growth period S1 can be divided into early and late periods depending on the cultivation method.

During the seedling growth period (early stage) S1, Phalaenopsis orchids are grown in a high temperature and humidity environment, for example at temperatures between 25 and 30°C. Because Phalaenopsis orchids are single-stemmed plants, under controlled cultivation conditions, once one new shoot has formed, no further shoots will form. For example, in the case of mini Phalaenopsis orchids, meristem seedlings are grown in flasks for approximately one year and eight months.

During the seedling growth period (late stage) S1, grown meristem seedlings are replanted in pots containing a medium such as sphagnum moss and cultivated in a high temperature and humidity environment. Phalaenopsis is an epiphytic plant, so the roots attach to the medium and the stems and leaves grow. For example, mini Phalaenopsis is cultivated in a pot for about six months. This is how Phalaenopsis seedlings are formed.

During the flower stalk growth period S2, which is a process after the seedlings of Phalaenopsis are formed, Phalaenopsis is cultivated in an environment suitable for elongating the flower stalks of the seedlings. The flower stalk refers to the stem that bears buds, and includes the stem before the buds are formed at the stem tip and the stem after the buds are formed at the stem tip. During the flower stalk growth period S2, cultivation is performed by adjusting the temperature to 21 to 24°C during the light period and 15 to 18°C during the dark period. Buds are not formed during the flower stalk growth period S2. In other words, this period is a period during which only the pure flower stalk elongates. For example, mini Phalaenopsis is cultivated for about 8 weeks. The flower stalks of industrially produced Phalaenopsis grow so that the stem tip hangs down as it elongates, but the length of the stem is a factor that greatly affects the height of the Phalaenopsis and the number of buds that can be formed later. The length of the flower stalk is determined to some extent during the flower stalk growth period S2, so by adjusting the length of this period, the appearance of the Phalaenopsis at the time of shipment can be adjusted.

In the flower stalk growth period S2 of this embodiment, artificial light including far-red light is irradiated during the light period to cultivate the plant. The amount of artificial light is set so that the ratio of [total amount of artificial light]/[amount of far-red light] is 4.5 to 15.0. The upper limit of the ratio of [total amount of artificial light]/[amount of far-red light] is set to 15.0 because no effect of promoting flower stalk elongation was observed when the ratio was 15.0 or more, but from the viewpoint of more reliably irradiating the Phalaenopsis with far-red light, it is preferable that the ratio is 12.0 or less. In addition, from the viewpoint of more promoting flower stalk elongation, it is more preferable that the ratio is 7.5 or less. However, if the amount of far-red light is too much, there is a risk of, for example, growth inhibition, so the lower limit of the ratio of [total amount of artificial light]/[amount of far-red light] is set to 4.5. In this embodiment, since far-red light is irradiated during the flower stalk growth period S2, the amount of flower stalk elongation during the same period can be promoted compared to the case where far-red light is not irradiated. Furthermore, the inventors have found that irradiating the flower stalk with far-red light during the flower stalk growth period S2 has almost no effect on bud formation (e.g., hastening bud formation).

In the cultivation method of this embodiment, the artificial light may be light from a light source such as an LED, fluorescent lamp, or light bulb, but from the viewpoint of preventing the temperature rise of the leaf surface, it is preferable to use an LED as the light source. This is expected to prevent the leaves of the Phalaenopsis orchid from burning, and eliminates the need to water the leaf surface. That is, the light sources of this embodiment are red (R), blue (B), green (G), and far-red (Fr) LEDs. Note that each LED typically has peak wavelengths of R = 660 nm, B = 460 nm, G = 530 nm, and Fr = 730 nm.

The light source used in this embodiment has a light quality ratio of R:G:B = 20:3:2, for example, and a ratio of R/Fr = 3 to 11. However, the light quality should be one that is suitable for the variety and growth conditions of the Phalaenopsis orchid, and the above ratios are merely examples.

In this embodiment, during the flower stalk growth period S2, the plant is cultivated in a light/dark cycle of 12 hours of light and 12 hours of dark. Artificial light is only applied during the light period, and not during the dark period. Because the cultivation method of this embodiment is artificial light cultivation, it can be cultivated regardless of the light/dark cycle of the actual external environment. In other words, Phalaenopsis can be cultivated all year round, regardless of the season or time.

The artificial light in the inflorescence stem growth period S2 of this embodiment has a photon flux density (PFD), which is an index representing the amount of light, of 170 to 210 μmolm ^- 2s ^-1 . From the viewpoint of ensuring a sufficient amount of photosynthesis for growth, the PFD is preferably 180 μmolm ^- 2s ^-1 or more. In addition, the photosynthetic photon flux density (PPFD), which is an index representing the amount of light contributing to photosynthesis in the PFD, is preferably at least 160 μmolm ^- 2s ^-1 or more. The amount of light included in the PPFD is the amount of red (R), blue (B), and green (G) light, and does not include the amount of far-red light (Fr). That is, the PFD of the artificial light can also be divided as shown in the following formula. As a result, a sufficient amount of light for growth can be ensured, and cultivation can be performed using completely artificial light.
Formula: PFD (μmolm ⁻² s ⁻¹ )=160 (light amount of RBG)+10 to 50 (light amount of Fr)

During the flowering period S3, Phalaenopsis orchids are cultivated in an environment suitable for bud formation and flowering. Phalaenopsis orchids have the characteristic that flowering speed increases when the cultivation temperature is raised after cultivation under low temperature conditions. Therefore, during the flowering period S3, cultivation is carried out under relatively higher temperatures than the cultivation temperature during the flower stalk growth period S2. In the cultivation method of this embodiment, cultivation is carried out so that the temperature is adjusted to 24-27°C during the light period and 19-22°C during the dark period. During the flowering period S3, the flower stalks elongate as buds form (early flowering period), and after a certain period of time, the buds flower (late flowering period). For example, mini Phalaenopsis orchids are cultivated for about 6-8 weeks during the flowering period S3.

In the cultivation method of the present embodiment, artificial light not including far-red light is irradiated during the light period of the flowering period S3. This is because no significant difference was found in the number of buds, the amount of elongation of the flower stem, and the flowering speed even when far-red light was irradiated during the flowering period S3. In other words, it can be said that far-red light does not affect the flowering period S3 of Phalaenopsis. The artificial light used during the light period of the flowering period S3 is specifically light including red (R), green (G), and blue (B) LEDs, and the light quality is set to a ratio of R:G:B=20:3:2, for example. In order for Phalaenopsis to grow sufficiently, the photon flux density (PFD) of the artificial light is preferably 160 μmol m ⁻² s ⁻¹ or more.

In this embodiment, the flowering period S3 is cultivated in a light/dark cycle of 12 hours light and 12 hours dark. Artificial light is only applied during the light period, not during the dark period. Because the cultivation method in this embodiment is artificial light cultivation, it can be cultivated regardless of the light/dark cycle of the actual external environment. In other words, Phalaenopsis can be cultivated all year round, regardless of the season or time.

In the acclimation period S4, the Phalaenopsis orchid cultivated in a controlled environment is cultivated so that it becomes accustomed to the outside environment. In the cultivation method of the present embodiment, during the light period of the acclimation period, artificial light including red, green, and blue LEDs is irradiated and cultivated. The light quality of the artificial light is set to a ratio of R:G:B=20:3:2, for example. The photon flux density (PFD) of the artificial light is, for example, 40 μmol m ⁻² s ⁻¹ or more. The light source used in the acclimation period S4 may be only artificial light, but may also be used in combination with sunlight, or may be only sunlight as described below. When cultivating with only artificial light, it is preferable to cultivate with a light-dark cycle of 12 hours light and 12 hours dark from the viewpoint of efficient cultivation.

In addition, during the acclimation period S4, the orchid may be cultivated under the same illumination conditions as outdoors. That is, the orchid may be cultivated in sunlight with the same light/dark cycle as the external environment. It is preferable to adjust the temperature conditions so that the cultivation temperature during the flowering period S3 approaches the temperature range of the external environment at the time of shipping. That is, during the acclimation period S4, the orchid is cultivated in the range of 20-30°C during the light period and 15-20°C during the dark period. For example, mini orchids are cultivated for about two weeks during the acclimation period S4. This allows the orchid to last longer (maintain a blooming state for a longer period) compared to when it is shipped without going through the acclimation period S4.

The cultivation method of this embodiment has been described as a method for cultivating Phalaenopsis orchids, but it can also be suitably used for plants of the Orchidaceae family that use similar cultivation methods.

(Regarding cultivation facilities)
Next, a description will be given of a cultivation facility 1 for Phalaenopsis orchid, which grows through a seedling growth period S1, a flower stalk growth period S2, a flowering period S3, and an acclimation period S4. The cultivation facility 1 of this embodiment includes a low-temperature room 2 for cultivating Phalaenopsis orchid in the flower stalk growth period S2, a cultivation room 3 for cultivating Phalaenopsis orchid in the flowering period S3, and an acclimation room 4 for cultivating Phalaenopsis orchid in the acclimation period S4.

The low-temperature room 2 includes a first irradiation means 21 that irradiates artificial light including far-red light during the light period, and a first temperature adjustment means 22 that adjusts the cultivation temperature during the light period and the dark period. Since the low-temperature room 2 is a room in which Phalaenopsis orchids are cultivated using artificial light, the walls may be constructed of a material with light-shielding properties.

In the low temperature chamber 2, the Phalaenopsis orchids are arranged in multiple tiers. "Multi-tiered" refers to a configuration in which multiple cultivation shelves housing the Phalaenopsis orchids are provided vertically, or in which the cultivation shelves are offset in a staircase-like arrangement. The low temperature chamber 2 of this embodiment has cultivation shelves made up of 2 to 6 tiers. This makes it possible to reduce the cultivation area and the costs required for cultivation. It also reduces the effort required to move around within the low temperature chamber 2, reducing the time and physical burden on the worker.

The first irradiation means 21 is a means for providing a light source suitable for the flower stem growth period S2 of the Phalaenopsis orchid, and is characterized by including far-red light. The first irradiation means 21 is preferably installed above the Phalaenopsis orchid.

The first temperature adjustment means 22 is a means for adjusting the temperature inside the low-temperature room 2 to a cultivation temperature suitable for the flower stalk growth period S2. The first temperature adjustment means 22 may adjust the temperature manually by an operator, or may adjust the temperature automatically based on information from external components such as a thermometer and an illuminance sensor.

The cultivation room 3 includes a second irradiation means 31 that irradiates artificial light that does not contain far-red light during the light period, and a second temperature adjustment means 32 that adjusts the cultivation temperature to a relatively higher temperature than the low temperature room 2. Since the cultivation room 3 is a room in which cultivation is performed using artificial light, the walls may be constructed of a material with light-shielding properties.

In the cultivation room 3, the Phalaenopsis orchids are arranged in multiple tiers. The cultivation room 3 in this embodiment has a cultivation shelf made up of 2 to 4 tiers of shelves. This makes it possible to reduce the cultivation area and the costs required for cultivation. It also reduces the effort required to move around within the cultivation room 3, reducing the time and physical burden on the worker.

The second irradiation means 31 is a means for providing a light source suitable for the flowering period S3 of the Phalaenopsis orchid, and is characterized by not including far-red light. The second irradiation means 31 is preferably installed above the Phalaenopsis orchid.

The second temperature adjustment means 32 is a means for adjusting the temperature inside the cultivation room 3 to a cultivation temperature suitable for the flowering period S3. The second temperature adjustment means 32 may adjust the temperature manually by an operator, or may adjust the temperature automatically based on information from external components such as a thermometer and an illuminance sensor.

The acclimation chamber 4 includes a third irradiation means 41 that irradiates artificial light and a third temperature adjustment means 42 that adjusts the cultivation temperature to a temperature close to that of the outside environment. The acclimation chamber 4 can be used for cultivation using at least one of artificial light and sunlight. When cultivating using artificial light, the walls may be made of a material that blocks light.

When cultivating with sunlight, the acclimatization chamber 4 includes a sunlight intake means 43 on the wall. The sunlight intake means 43 is provided on at least one of the ceiling wall or side wall of the acclimatization chamber 4, and may be configured to allow sunlight to enter the chamber. The sunlight intake means 43 is a translucent member such as an acrylic plate, a glass plate, or a vinyl sheet.

In the acclimatization chamber 4, the Phalaenopsis orchids are arranged in one or multiple tiers. The acclimatization chamber 4 in this embodiment has a cultivation shelf made up of one to four tiers of shelves. This makes it possible to reduce the cultivation area and the costs required for cultivation. Furthermore, when cultivating using sunlight, it is preferable to arrange the upper and lower shelves in positions that are offset vertically so that they do not overlap, from the viewpoint of ensuring that sunlight reaches all of the Phalaenopsis orchids.

In addition to the above configuration, each room may be equipped with a humidity sensor, an illuminance sensor, etc. By measuring the humidity, illuminance, etc., the room can be managed to create an environment suitable for cultivating Phalaenopsis during the flower stem growth period S2, flowering period S3, and acclimation period S4.

(About the cultivation equipment)
Next, the cultivation device 20 according to the present embodiment will be described with reference to Fig. 2. Fig. 2 is a schematic diagram of the cultivation device 20.

The cultivation device 20 is suitable for use with Phalaenopsis orchids in the flower stem growth period S2. The cultivation device 20 includes an irradiation means 21 that irradiates artificial light including far-red light during the light period and is set so that the ratio of [total light amount]/[light amount of far-red light] is 4.5 to 15.0, and a temperature adjustment means (not shown) that adjusts the cultivation temperature during the dark period to 15 to 18°C.

The cultivation device 20 according to this embodiment employs a bottom irrigation method in which water is allowed to seep into the bottom of the Phalaenopsis orchid. In general, the cultivation device 20 comprises a cultivation shelf 23, a water receiver 24 arranged on the cultivation shelf 23, and a storage container 25 arranged inside the water receiver 24 to store the Phalaenopsis orchid.

The cultivation shelf 23 includes, for example, a number of pillars 232, a shelf 231 that is hung between the multiple pillars 232, and an upper frame 233 that connects the upper ends of the multiple pillars 232. A water receiver 24 is disposed on the shelf 231. An illumination means 21 that illuminates artificial light toward the Phalaenopsis orchid is attached to the upper frame 233. Note that the illumination means 21 is not limited to being attached to the upper frame 233, and may simply be located above the Phalaenopsis orchid.

The water receiver 24 includes a protruding portion 241, and by setting the water level below the height of the protruding portion 241, water can be stored in the water receiver 24 without contacting the water with the storage container 25 that contains the Phalaenopsis. This makes it possible to maintain an optimal humidity environment for the growth of the Phalaenopsis indoors. In addition, because the roots are not immersed in water except when watering, root rot can be prevented.

The storage container 25 includes a tray 251 and a pot 252. The tray 251 is stored in the water receiver 24. The tray 251 is a tray for raising seedlings, and can store a plurality of pots 252. In this embodiment, the tray 251 and the pot 252 are separate members, but the Phalaenopsis orchids may be stored directly in the tray 251. The bottoms of the tray 251 and the pot 252 are provided with holes through which water can pass. As a result, when water accumulates in the water receiver 24 during watering and the water level rises, water seeps through the holes in the bottom by the bottom irrigation method, and the water is supplied to the Phalaenopsis orchids. This allows water to be supplied evenly to all the Phalaenopsis orchids stored in the storage container 25.

Water is supplied to and drained from the water receiver 24 in which the Phalaenopsis orchid is housed. Specifically, the cultivation device 20 includes a water supply channel 26 that supplies water to the water receiver 24, a water supply valve 261 that opens and closes the water supply channel 26, a drainage channel 27 that drains water accumulated in the water receiver 24, and a drainage valve 271 that opens and closes the drainage channel 27.

The water supply passage 26 is a pipe through which water passes, and has a water supply port 262 at its tip. The water supply port 262 is located above the water receiver 24. In this case, it is preferable that the water supply port 262 is located in a position where it does not directly contact the Phalaenopsis orchid when water is being supplied. The water supplied is typically water supplied from a storage tank or waterworks, well water, etc., but it may also be a culture solution containing nutrients necessary for the growth of the Phalaenopsis orchid.

The water supply valve 261 adjusts the amount of water supplied from the water supply passage 26 to the water receiver 24, and is, for example, a valve. By opening the water supply valve 261, water is supplied into the water receiver 24, and by closing the water supply valve 261, the water supply is stopped.

The drainage channel 27 is a pipe through which water passes, and has a drain outlet 272 at its tip. The drain outlet 272 is located on the bottom surface of the water receiver 24. The drain outlet 272 is provided at the other end of the water receiver 24 in the longitudinal direction. As a result, the water supply port 262 and the drain outlet 272 are located at both ends of the water receiver 24, allowing for efficient water supply and drainage. Note that the water discharged into the drainage channel 27 is discarded without being reused, in order to improve hygiene.

The water inlet 262 and the drain 272 may be arranged to be aligned vertically on one end of the water receiver 24 in the longitudinal direction. This allows the water inlet 262 and the drain 272 to be concentrated on one end of the water receiver 24 in the longitudinal direction, resulting in a neater appearance. In addition, there is more space on the other end of the water receiver 24 in the longitudinal direction, making work easier and more efficient.

The drain valve 271 adjusts the amount of water discharged from the water receiver 24, and is, for example, a valve. By opening the drain valve 271, the water accumulated in the water receiver 24 is discharged to the drainage channel 27, and by closing the drain valve 271, the discharge of water is stopped.

The water supply valve 261 and the drain valve 271 may be opened and closed manually by an operator, but may also be configured to be automatically controlled to open and close based on input from an external device.

The cultivation device 20 according to this embodiment uses a bottom irrigation method for water supply and drainage. This allows the Phalaenopsis orchid to be watered simply by opening and closing the water supply valve 261 and the drainage valve 271, reducing the burden on the worker.

(About the best light quality for flower stem growth)
Next, we will explain the experiment to investigate the light quality suitable for the flower stalk growth period. We set several irradiation conditions A to D with different light qualities, and measured how much the plants used in Experimental Examples 1 to 4 grew flower stalks under each irradiation condition.

Irradiation conditions A to D are shown in Table 1. Irradiation conditions A to C indicate the ratio of artificial light (red light, green light, blue light, and far-red light) to far-red light, and irradiation condition D indicates that it does not contain far-red light (it contains only red light, green light, and blue light).

Other conditions are shown in Table 2. Experimental Examples 1 to 4 described below were all grown under the conditions listed in Table 2.

(Experimental Example 1)
In Experimental Example 1, the F4292 strain, a mini Phalaenopsis variety, was cultivated under irradiation conditions A to D. The results are shown in FIG. 3(a). As shown in FIG. 3(a), when cultivated under irradiation conditions A to C including far-red light, the plant grew about 15 mm more than when cultivated under irradiation condition D not including far-red light. In particular, under irradiation conditions B and C, the plant grew 20 mm more. This result shows that during the flower stalk elongation period of Phalaenopsis, the plant grows faster when cultivated under irradiation conditions including far-red light.

(Experimental Example 2)
In Experimental Example 2, the F2244 strain, a mini Phalaenopsis variety, was cultivated under irradiation conditions A to D. The results are shown in FIG. 3(b). As shown in FIG. 3(b), when cultivated under irradiation conditions A to C including far-red light, the plant grew 15 mm or more longer than when cultivated under irradiation condition D not including far-red light. In particular, under irradiation condition A, the plant grew 20 mm or more longer. This result shows that during the flower stalk elongation period of Phalaenopsis, the plant grew faster when cultivated under irradiation conditions including far-red light.

(Experimental Example 3)
In Experimental Example 3, the F4482 strain, a mini Phalaenopsis variety, was cultivated under irradiation conditions A to D. The results are shown in FIG. 3(c). As shown in FIG. 3(c), the plants cultivated under irradiation conditions A to C including far-red light grew 8 mm or more longer than the plants cultivated under irradiation condition D not including far-red light. In particular, the plants grew 20 mm or more longer under irradiation condition B. This result shows that during the flower stalk elongation period of Phalaenopsis, the growth rate is faster when cultivated under irradiation conditions including far-red light.

(Experimental Example 4)
In Experimental Example 4, the F4485 strain, a mini Phalaenopsis variety, was cultivated under irradiation conditions A to D. The results are shown in FIG. 3(d). As shown in FIG. 3(d), the plants grown under irradiation conditions A to C including far-red light grew 20 mm or more longer than the plants grown under irradiation condition D not including far-red light. In particular, the plants grew about 30 mm or more longer under irradiation conditions A and C. This result shows that during the flower stalk elongation period of Phalaenopsis, the growth rate is faster when the plants are grown under irradiation conditions including far-red light.

From Experimental Examples 1 to 4, although there were differences depending on the Phalaenopsis variety, all Phalaenopsis orchids grown under artificial light including far-red light during the flower stalk growth period grew more than when grown under artificial light not including far-red light. In other words, growing under artificial light including far-red light during the flower stalk growth period allowed the flower stalk to grow faster. In Experimental Examples 1 to 4, irradiation was performed so that the ratio of [total light amount]/[light amount of far-red light] was 4.5 to 15.0, but when the ratio was 15.0 or more, the effect of promoting flower stalk growth could not be confirmed. In other words, it was found that the above ratio is an appropriate ratio for flower stalk growth.

(Regarding the effect of promoting flower stalk growth)
(Experimental Example 5)
In Experimental Example 5, a mini Phalaenopsis variety, F4482, was placed in a 2.5-inch pot to investigate how far-red light contributes to flower stalk growth. A number of different light quality irradiation conditions A to D were set, and the flower stalk elongation amount from the reference day was measured. Irradiation conditions A to D are as shown in Table 1, and other cultivation conditions are as shown in Table 2. The results are shown in FIG. 4 and Tables 3 and 4. Table 3 shows the measured flower stalk length, and Table 4 shows the flower stalk elongation amount obtained by subtracting the flower stalk length on the reference day from the flower stalk length for each day. FIG. 4 is a graph showing Table 4. In this experimental example, Phalaenopsis was cultivated for 56 days under each irradiation condition, but the flower stalk length was short before the 28th day from the start of cultivation, and no difference was observed between the irradiation conditions. Therefore, Tables 3 and 4 show the results from the 28th day onwards.

As can be seen from Table 4, the flower stalk elongation amount during the same period was about 30 to 40 mm more under irradiation conditions A to C than under irradiation condition D. In other words, it was found that far-red light contributes to promoting the elongation of the flower stalk during the flower stalk growth period of Phalaenopsis, i.e., before the formation of buds. Regarding buds, no bud formation was observed during the flower stalk growth period as a result of irradiation with far-red light. Furthermore, no significant difference was observed in the number of buds formed during the subsequent flowering period.

A large amount of flower stalk elongation means that the target flower stalk length can be reached early. The target flower stalk length is the flower stalk length (height of the Phalaenopsis orchid) that is the guideline for when the Phalaenopsis orchid transitions into the flowering period. From Table 3 and Figure 4, for example, if the target flower stalk length is 70 mm, it can be seen that it takes about 56 days under irradiation condition D. In contrast, it can be seen that under irradiation conditions A and B, 70 mm or more is achieved on the 49th day, and under irradiation condition C, 70 mm or more is achieved around the 51st day. In other words, according to this experimental example, it was possible to shorten the flower stalk growth period and the number of days required to reach the target flower stalk length.

From Table 4, the amount of flower stalk growth per day under each irradiation condition was calculated to be 4.2 mm under irradiation condition A, 4.1 mm under irradiation condition B, 3.7 mm under irradiation condition C, and 2.5 mm under irradiation condition D. In other words, when far-red light was not irradiated during the flower stalk growth period, the flower stalk grew only 2.5 mm per day, whereas when far-red light was irradiated during the flower stalk growth period, the flower stalk grew at least 3.7 mm per day. This shows that far-red light significantly promotes the amount of flower stalk growth during the flower stalk growth period, even in terms of the amount of growth per day.

Other Embodiments
A cultivation device 20A according to another embodiment of the present invention will be described with reference to Figures 5 to 8. The cultivation device 20A cultivates Phalaenopsis orchids during at least the flower stalk growth period S2 and the flowering period S3. Figure 5 is a functional block diagram showing the functional configuration of the cultivation device 20A equipped with the first embodiment of the discrimination means, Figure 6 is a flowchart showing the control method of the cultivation device 20A equipped with the first embodiment of the discrimination means, Figure 7 is a functional block diagram showing the functional configuration of the cultivation device 20A equipped with the second embodiment of the discrimination means, and Figure 8 is a flowchart showing the control method of the cultivation device 20A equipped with the second embodiment of the discrimination means.

(Basic configuration)
The cultivation device 20A includes an artificial light irradiation means 21A having a first irradiation condition for irradiating the Phalaenopsis with artificial light including far-red light during the flower stalk growth period S2 and a second irradiation condition for irradiating the Phalaenopsis with artificial light not including far-red light during the flowering period S3. The artificial light irradiation means 21A switches from the first irradiation condition to the second irradiation condition by an irradiation condition switching means 28A at the stage of transition from the flower stalk growth period S2 to the flowering period S3.

The artificial light irradiation means 21A may further have a third irradiation condition for irradiating the Phalaenopsis with artificial light that does not contain far-red light during the acclimation period S4. In this case, the artificial light irradiation means 21A may switch from the second irradiation condition to the third irradiation condition by the irradiation condition switching means 28A at the stage of transition from the flowering period S3 to the acclimation period S4.

The first, second, and third irradiation conditions of the artificial light irradiation means 21A of this embodiment are shown in Table 5. However, these irradiation conditions are merely illustrative and can be changed as appropriate to suit the Phalaenopsis orchid being cultivated.

The cultivation device 20A is equipped with a cultivation temperature adjustment means 22A having a first temperature condition for adjusting the cultivation temperature to a low temperature condition during the flower stalk growth period S2, and a second temperature condition for adjusting the cultivation temperature to a high temperature condition during the flowering period S3. The cultivation temperature adjustment means 22A switches from the first temperature condition to the second temperature condition by the temperature condition switching means 29A at the stage of transition from the flower stalk growth period S2 to the flowering period S3.

The cultivation temperature adjustment means 22A may further have a third temperature condition for adjusting the cultivation temperature during the acclimation period S4. In this case, the cultivation temperature adjustment means 22A may switch from the first temperature condition to the second temperature condition by the temperature condition switching means 29A at the stage of transition from the flowering period S3 to the acclimation period S4.

The first temperature condition, second temperature condition, and third temperature condition of the cultivation temperature adjustment means 22A of this embodiment are shown in Table 6. However, these temperature conditions are merely illustrative and can be changed as appropriate to suit the Phalaenopsis orchid being cultivated.

According to the cultivation device 20A of this embodiment, the temperature and irradiation conditions in one room can be optimized for the growth of Phalaenopsis orchids simply by adjusting the artificial light irradiation means 21A and the cultivation temperature adjustment means 22A. This eliminates the need to move the Phalaenopsis orchids to another room, reducing the burden on workers. In addition, because the cultivation device 20A irradiates far-infrared light during the flower stalk growth period S2, it is possible to shorten the cultivation cycle compared to conventional methods, thereby reducing cultivation costs.

The cultivation device 20A of this embodiment allows Phalaenopsis orchids to be cultivated entirely under artificial light. This allows Phalaenopsis orchids to be cultivated in an environment that promotes their growth, allowing them to be shipped in a shorter time than before.

(Regarding the discrimination means)
The cultivation device 20A further includes a determination means 50 for determining a transition from the flower stalk growth period S2 to the flowering period S3. The determination means 50 includes a control unit 53 for issuing commands to the irradiation condition switching means 28A of the lighting device arranged in the room and the temperature condition switching means 29A of the air conditioning device arranged in the room in response to the determination of a transition from the flower stalk growth period S2 to the flowering period S3.

The irradiation condition switching means 28A is, for example, a control unit built into the lighting device, or a remote control that is an external member of the lighting device. The temperature condition switching means 29A is, for example, a control unit built into the air conditioner, or a remote control that is an external member of the air conditioner. In other words, the irradiation condition switching means 28A and the temperature condition switching means 29A are not limited to being housed inside the lighting device and the air conditioner.

The control unit 53 is typically a processor such as a CPU (CENTRAL PROCESSING UNIT). In response to a command from the control unit 53, the irradiation condition switching means 28A switches the irradiation conditions of the artificial light irradiation means 21A from the first irradiation conditions to the second irradiation conditions. Similarly, the temperature condition switching means 29A switches the temperature conditions of the cultivation temperature adjustment means 22A from the first temperature conditions to the second temperature conditions.

The discrimination means 50 may further discriminate the transition from the flowering period S3 to the acclimation period S4. In this case, in response to a command from the control unit 53 resulting from the discrimination of the transition from the flowering period S3 to the acclimation period S4, the irradiation condition switching means 28A switches the irradiation condition of the artificial light irradiation means 21A from the second irradiation condition to the third irradiation condition. Similarly, the temperature condition switching means 29A switches the temperature condition of the cultivation temperature adjustment means 22A from the second temperature condition to the third temperature condition. The irradiation conditions and temperature conditions are as shown in Tables 5 and 6.

(Regarding the first embodiment of the discriminating means)
With particular reference to Figures 5 and 6, a case in which the discrimination means 50 of the cultivation apparatus 20A of this embodiment further includes a storage means 51 will be described.

The storage means 51 stores information 51a on the number of days in the flower stalk growth period S2, the number of days in the flowering period S3, and the number of days in the acclimation period S4 of the Phalaenopsis orchid. The number of days information 51a may be pre-stored information, or may be information input by the operator before the first day of cultivation. In this embodiment, the number of days information 51a on the flower stalk growth period S2 stored in the storage means 51 is referred to as the number of days X, and the actual number of days of cultivation during that period is referred to as the number of elapsed days x. Similarly, the number of days information 51a on the flowering period S3 is referred to as the number of days Y, and the number of days of cultivation is referred to as the number of elapsed days y. The number of days information 51a on the acclimation period S4 is referred to as the number of days Z, and the number of days of cultivation is referred to as the number of elapsed days z.

Next, we will explain the control method for the cultivation device 20A equipped with the memory means 51.

The Phalaenopsis orchid is first cultivated under the first irradiation conditions and first temperature conditions, which are the cultivation conditions for the flower stalk growth period S2 (step S11). The discrimination means 50 counts the number of days x that have passed during the flower stalk growth period S2, and discriminates whether the number of days X for the flower stalk growth period S2 has been met based on the number of days information 51a (step S12). If the number of days x that have passed is greater than the number of days X for the flower stalk growth period S2 (if x>X is YES), the discrimination means 50 determines that the flower stalk growth period S2 has transitioned to the flowering period S3, and issues a command from the control unit 53 to the irradiation condition switching means 28A and the temperature condition switching means 29A to switch the conditions. Note that if the number of days x that have passed is less than the number of days X for the flower stalk growth period S2 (if x>X is NO), cultivation continues under the first irradiation conditions and first temperature conditions.

The irradiation condition switching means 28A, which has received the command, switches the irradiation conditions of the artificial light irradiation means 21A from the first irradiation conditions to the second irradiation conditions (step S13). Similarly, the temperature condition switching means 29A switches the temperature conditions of the cultivation temperature adjustment means 22A from the first temperature conditions to the second temperature conditions (step S13). After the condition switching, the cultivation device 20A cultivates the Phalaenopsis orchid under the second irradiation conditions and the second temperature conditions.

The discrimination means 50 counts the number of days y that have passed in the flowering period S3, and discriminates whether the number of days Y of the flowering period S3 has been met based on the number of days information 51a (step S14). If the number of days y that have passed is greater than the number of days Y of the flowering period S3 (if y>Y is YES), the discrimination means 50 determines that the flowering period S3 has transitioned to the acclimation period S4, and issues a command from the control unit 53 to the irradiation condition switching means 28A and the temperature condition switching means 29A to switch conditions. Note that if the number of days y that have passed is less than the number of days Y of the flowering period S3 (if y>Y is NO), cultivation continues under the second irradiation conditions and second temperature conditions.

The irradiation condition switching means 28A, which has received the command, switches the irradiation conditions of the artificial light irradiation means 21A from the second irradiation conditions to the third irradiation conditions (step S15). Similarly, the temperature condition switching means 29A switches the temperature conditions of the cultivation temperature adjustment means 22A from the first temperature conditions to the second temperature conditions (step S15). After the condition switching, the cultivation device 20A cultivates the Phalaenopsis orchid under the third irradiation conditions and the third temperature conditions.

The discrimination means 50 counts the number of days z that have passed in the acclimation period S4, and discriminates whether the number of days Z of the acclimation period S4 has been met based on the number of days information 51a (step S16). If the number of days z that have passed is greater than the number of days Z of the acclimation period S4 (if z>Z is YES), the discrimination means 50 determines that the acclimation period S4 has ended, and issues a command from the control unit 53 to the irradiation condition switching means 28A and the temperature condition switching means 29A to end the acclimation period. Note that if the number of days z that have passed is less than the number of days Z of the acclimation period S4 (if z>Z is NO), cultivation continues under the third irradiation conditions and third temperature conditions.

The cultivation device 20A of this embodiment can automatically control the temperature and irradiation conditions using only the number of days information 51a stored in the memory means 51, so it can easily create an indoor environment that is optimal for the growth of Phalaenopsis orchids. In addition, it can reduce the effort required by the operator to adjust the temperature and irradiation conditions, thereby reducing the burden on the operator.

(Second embodiment of the discrimination means)
7 and 8, a description will be given of another embodiment of the discrimination means, in which the discrimination means 50B further includes an image pickup means 52B.

The photographing means 52B is capable of photographing the Phalaenopsis orchid and is typically a camera. The photographing means 52B performs, for example, continuous photographing, which involves photographing at all times, or interval photographing, which involves photographing at a predetermined time each day. The images photographed by the photographing means 52B are preferably color images, but may also be black and white images. The photographing means 52B acquires image data of the photographed Phalaenopsis orchid and outputs it to the control unit 53B.

The control unit 53B performs image analysis based on the acquired image data. In this embodiment, binarization is performed as the image processing method. Binarization is a process in which an image is converted into two gradations of black and white with a threshold as the boundary. In binarization, an R image is acquired by dividing a color image into RGB. The acquired R image is converted into a grayscale image, and binarization is performed based on the set threshold. Note that if the storage means 51B described below stores image data information, image data information 51b can be output to the storage means 51B.

The discrimination means 50B includes a storage means 51B that stores information 51b on image data during the flower stalk growth period S2, image data during the flowering period S3, and image data during the acclimation period S4. The image data information 51b is, for example, the number of black pixels after binarization processing, and may be the number of pixels set by the operator, or may be stored image data information from the past.

Next, a method for controlling the cultivation device 20A equipped with the image capture means 52B will be described. In the following description, the Phalaenopsis orchid variety is F4482, and the pixel count of the image data is 425 x 300 pixels.

The Phalaenopsis orchid is first cultivated under the first illumination conditions and first temperature conditions, which are the cultivation conditions for the flower stalk growth period S2 (step S20). After cultivation begins, the photographing means 52B starts photographing the Phalaenopsis orchid (step S21). After photographing begins, the control unit 53 acquires the photographed image data and performs image analysis (binarization processing) (step S22). In the binarization processing, in this embodiment, the threshold value is set to 235 to 255. As a result, the image data shows the leaves and flower stalks of the Phalaenopsis orchid as black pixels. Through image analysis, the control unit 53B calculates the number of black pixels n.

Next, the control unit 53B determines whether the calculated pixel number n is n>1200 or not (step S23). In this embodiment, 1200 pixels is used as the reference value, but the number of black pixels in step S23 can be selected from the range of 1000 to 2000. If the pixel number n is 1200 or more (n>1200 is YES), the determination means 50B determines that the flower stalk growth period S2 has been transitioned to the flowering period S3, and the control unit 53B commands the irradiation condition switching means 28A and the temperature condition switching means 29A to switch conditions. If the pixel number n is 1200 or less (n>1200 is NO), cultivation continues under the first irradiation conditions and first temperature conditions.

The irradiation condition switching means 28A, which has received the command, switches the irradiation conditions of the artificial light irradiation means 21A from the first irradiation conditions to the second irradiation conditions (step S24). Similarly, the temperature condition switching means 29A switches the temperature conditions of the cultivation temperature adjustment means 22A from the first temperature conditions to the second temperature conditions (step S24). After the condition switching, the cultivation device 20A cultivates the Phalaenopsis orchid under the second irradiation conditions and the second temperature conditions.

The photographing means 52B continues photographing during the flowering period S3. The control unit 53B acquires image data from the photographing means 52B and performs image analysis in the same manner as in step S22 (step S25). In this binarization process, in this embodiment, the threshold is set to 215 to 255. As a result, the image data shows the leaves, flower stems, and flowers of the Phalaenopsis orchid as black pixels. Through image analysis, the control unit 53B calculates the number of black pixels, n.

The control unit 53B determines whether the calculated pixel number n is n>3600 or not (step S26). In this embodiment, 3600 pixels is used as the reference value, but it is preferable that the number of black pixels in step S26 is 3000 to 5000. If the pixel number n is 3600 or more (n>3600 is YES), the determination means 50B determines that the flowering period S3 has been transitioned to the acclimation period S4, and the control unit 53B issues a command to the irradiation condition switching means 28A and the temperature condition switching means 29A to switch conditions. If the pixel number n is 3600 or less (n>3600 is NO), cultivation continues under the second irradiation conditions and second temperature conditions.

The irradiation condition switching means 28A, which has received the command, switches the irradiation conditions of the artificial light irradiation means 21A from the second irradiation conditions to the third irradiation conditions (step S27). Similarly, the temperature condition switching means 29A switches the temperature conditions of the cultivation temperature adjustment means 22A from the second temperature conditions to the third temperature conditions (step S27). After the condition switching, the cultivation device 20A cultivates the Phalaenopsis orchid under the third irradiation conditions and the third temperature conditions.

The image capturing means 52B continues capturing images during the acclimation period S4. The control unit 53B acquires image data from the image capturing means 52B and performs image analysis in the same manner as in step S22 (step S28). Through the image analysis, the control unit 53B calculates the number of black pixels n.

The control unit 53B determines whether the calculated pixel number n is n>20,000 or not (step S29). In step S29, the pixel number n of black pixels at the end of the acclimation period S4 is preferably 20,000 or more. If the pixel number n is 20,000 or more (n>20,000 is YES), the determination means 50B determines that the acclimation period S4 has ended, and issues a command from the control unit 53B to the irradiation condition switching means 28A and the temperature condition switching means 29A to end cultivation. Note that if the pixel number n is 20,000 or less (n>20,000 is NO), cultivation continues under the third irradiation condition and the third temperature condition.

The cultivation device 20A of this embodiment can automatically control temperature and irradiation conditions based on image data captured by the imaging means, making it easy to create an environment that is optimal for the growth of Phalaenopsis orchids. In addition, since it can determine when the flower stalk growth period has shifted to the flowering period, it can easily control temperature and irradiation conditions. In addition, it can reduce the effort required by the worker to adjust the temperature and irradiation conditions, thereby reducing the burden on the worker.

In the present embodiment, the cultivation device 20A has been described as an example in which binarization processing is performed by the discrimination means, but the image processing method is not limited to the method disclosed here. For example, the discrimination means 50B may be equipped with a learning device (not shown). In this case, by having the learning device learn image data of the Phalaenopsis orchid for each period, the transition of the Phalaenopsis orchid's growth period can be more accurately determined.

In addition, in this embodiment, the Phalaenopsis orchid period is determined by binarizing the color image, but the color image may be used as is. One method of using the color image as is, for example, is an image processing method using deep learning. In this case, the determination means is equipped with a learning device, and by having the learning device learn the characteristics of the Phalaenopsis orchid in each period, the transition of the Phalaenopsis orchid's growth period can be determined more accurately.

The embodiments disclosed herein are illustrative in all respects and should not be considered limiting. The scope of the present invention is indicated by the claims rather than the above description, and it is intended to include all modifications within the scope and meaning equivalent to the claims.

1 Cultivation facility, 2 Low temperature room, 3 Cultivation room, 4 Acclimatization room, 20, 20A Cultivation device, 21 (first) Irradiation means, 21A Artificial light irradiation means, 22 First temperature adjustment means, 22A Cultivation temperature adjustment means, 23 Cultivation shelf, 24 Water receiver, 25 Storage container, 26 Water supply channel, 27 Drainage channel, 31 Second irradiation means, 32 Second temperature adjustment means, 41 Third irradiation means, 42 Third temperature adjustment means, 43 Sunlight intake means, 50, 50B Discrimination means, 51, 51B Storage means, 52B Photography means, 53, 53B Control unit.

Claims (9)

A cultivation facility for Phalaenopsis orchids that grows through a seedling growth period, a flower stem growth period, a flowering period, and an acclimation period,
A low-temperature room for cultivating the Phalaenopsis orchid during the flower stem growth period;
a cultivation room for cultivating the Phalaenopsis orchid during the flowering period;
and an acclimatization room in which the Phalaenopsis orchid is cultivated during the acclimatization period.
The low temperature chamber comprises:
A first irradiation means for irradiating artificial light including far-red light during a light period;
a first temperature control means for controlling the cultivation temperature during a light period and a dark period;
The cultivation room includes:
A second irradiation means for irradiating artificial light not including far-red light during a light period;
A cultivation facility comprising a second temperature adjustment means for adjusting the cultivation temperature to be relatively higher than the low temperature room. The cultivation facility according to claim 1, wherein the first irradiation means is set so that the ratio of [total amount of artificial light]/[amount of far-red light] is 4.5 to 15.0. In the low temperature room and the cultivation room,
The cultivation facility according to claim 1 or 2, wherein the Phalaenopsis orchids are arranged in multiple tiers. The acclimatization chamber comprises:
A third irradiation means for irradiating artificial light not including far-red light during a light period;
The cultivation facility according to any one of claims 1 to 3, further comprising a third temperature control means for controlling the cultivation temperature during the light period to be 20 to 30°C and the cultivation temperature during the dark period to be 15 to 20°C. The cultivation facility according to any one of claims 1 to 4, wherein the acclimatization room includes a sunlight intake means. A cultivation method for cultivating a Phalaenopsis orchid in a cultivation facility, the cultivation method comprising the steps of: a seedling growth period; a flower stem growth period; a flowering period; and an acclimatization period.
Cultivating the Phalaenopsis orchid during the flower stem growth period in a low temperature room;
Cultivating the Phalaenopsis orchid during the flowering period in a cultivation room;
and cultivating the Phalaenopsis orchid during the acclimatization period in an acclimatization room;
In the step of cultivating in a low temperature room,
A step of adjusting the temperature to 21 to 24°C during the light period and irradiating artificial light containing far-red light so that the ratio of [total light amount of artificial light]/[light amount of far-red light] is 4.5 to 15.0;
adjusting the temperature to 15-18°C during the dark period;
The cultivation method comprises: In the step of cultivating in the cultivation room,
A step of adjusting the temperature to 24 to 27 ° C. during the light period and irradiating with artificial light that does not contain far-red light;
The cultivation method according to claim 6, further comprising a step of adjusting the temperature to 19 to 22 ° C. during a dark period. In the step of cultivating in the acclimatization room,
A step of adjusting the temperature to 20 to 30 ° C. during the light period and irradiating with artificial light that does not contain far-red light;
The cultivation method according to claim 6 or 7, further comprising a step of adjusting the temperature to 15 to 20 ° C. during a dark period. 8. The cultivation method according to claim 6 or 7, further comprising the step of cultivating the plant in the acclimatization room under the same illumination conditions as outdoors.

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