JP7595808B2 - Semiconductor Test Equipment - Google Patents

Description

This disclosure relates to a semiconductor testing apparatus, and in particular to a current evaluation apparatus that passes a large current through a chip-shaped power semiconductor device.

In recent years, the capacity of power semiconductor devices has increased, and the current passed during testing has increased. JP2016-11862A discloses a semiconductor testing device that applies pressure to a semiconductor device while passing a current through the semiconductor device.

JP 2016-11862 A

However, when testing a semiconductor device having a coating using the semiconductor testing equipment disclosed in Patent Document 1, the stress caused by applying pressure is concentrated on the coating. This reduces adhesion between the semiconductor testing equipment and the electrodes of the semiconductor device. As a result, the electrical resistance between the semiconductor testing equipment and the electrodes of the semiconductor device increases. Furthermore, when pressure is applied while avoiding the coating, stress is concentrated on one part of the semiconductor device, causing an uneven adhesion between the semiconductor device and the cooling plate. This results in an uneven heat distribution in the semiconductor device, deteriorating the mechanical properties of the semiconductor device.

The present disclosure has been made in consideration of the above, and its purpose is to provide a semiconductor testing device that can suppress an increase in electrical resistance between the semiconductor testing device and the electrodes of a semiconductor device, and can suppress deterioration of the mechanical characteristics of the semiconductor device.

The semiconductor testing apparatus according to the present disclosure tests a semiconductor device. The semiconductor device includes a first electrode, a second electrode, and a covering portion. The second electrode is on the opposite side of the first electrode. The covering portion covers a portion of the first electrode. The semiconductor testing apparatus includes a cooling plate, a metal foil, a pressure plate, an elastic body, a current supplying portion, and a pressure mechanism. The cooling plate is electrically connected to the second electrode. A semiconductor device is placed on the cooling plate. The metal foil is placed on the first electrode and the covering portion. The pressure plate includes a pressure surface. The pressure plate is placed on the metal foil. The elastic body is attached to the pressure plate. The current supplying portion is electrically connected to each of the cooling plate and the pressure plate. The current supplying portion passes a current between the first electrode and the second electrode. The pressure mechanism presses the pressure surface against the first electrode via the metal foil. The pressure mechanism presses the elastic body against the covering portion via the metal foil.

According to the semiconductor testing device of the present disclosure, the pressure surface is pressed against the first electrode of the semiconductor device, and the elastic body is pressed against the covering portion of the semiconductor device. As a result, it is possible to suppress an increase in electrical resistance between the semiconductor device and the semiconductor testing device, and to suppress deterioration of the mechanical properties of the semiconductor device.

1 is a schematic vertical sectional view showing a configuration of a semiconductor testing device according to a first embodiment; 3 is a schematic bottom view showing the configuration of a pressing structure according to the first embodiment. FIG. 3 is a schematic vertical cross-sectional view taken along line III-III in FIG. 2. 1 is a flow diagram illustrating a semiconductor device testing method according to a first embodiment; FIG. 11 is a schematic vertical cross-sectional view showing a cooling plate preparation step. FIG. 1 is a schematic plan view showing a configuration of a semiconductor device. 7 is a schematic vertical cross-sectional view taken along line VII-VII in FIG. 6. FIG. 11 is a schematic vertical cross-sectional view showing a placing step. FIG. 11 is a schematic vertical cross-sectional view showing a pressurizing mechanism preparation step. FIG. 4 is a schematic vertical cross-sectional view showing a testing process. FIG. 13 is a bottom schematic view showing a second electrode after a testing process in a comparative example not having an elastic body. 11 is a schematic vertical sectional view showing a test process using a semiconductor test device according to a first modified example of the first embodiment; FIG. 13 is a schematic vertical sectional view showing a test process using a semiconductor test device according to a second modification of the first embodiment; FIG. FIG. 1 is a schematic plan view showing a configuration of a first modified example of a semiconductor device. FIG. 13 is a schematic plan view showing a configuration of a second modified example of a semiconductor device. 11 is a bottom schematic view showing the configuration of a pressing structure according to a second embodiment. FIG. 17 is a schematic vertical cross-sectional view taken along line XVII-XVII in FIG. 16. 11 is a schematic vertical cross-sectional view showing a test process using a semiconductor test device according to a second embodiment. FIG. 13 is a schematic bottom view showing the configuration of a pressure structure according to a modified example of the second embodiment. FIG. 20 is a schematic vertical cross-sectional view taken along line XX-XX in FIG. 19. 13 is a schematic vertical cross-sectional view showing an area occupied by a groove portion according to a modified example of the second embodiment. FIG. 13 is a schematic vertical sectional view showing a test process using a semiconductor test device according to a third embodiment. FIG. 13 is a schematic vertical cross-sectional view showing the configuration of an elastic body according to embodiment 3. FIG. 13 is a schematic vertical cross-sectional view showing the configuration of a modified example of the elastic body according to the third embodiment. FIG. 13 is a schematic vertical cross-sectional view showing a state in which pressure applied to the elastic body by the pressure mechanism is released after electrical characteristics of the semiconductor device have been tested in a testing process; FIG. 13 is a schematic vertical cross-sectional view showing a test process using a semiconductor test device according to a fourth embodiment. FIG. 13 is a bottom schematic view showing the configuration of a pressing structure according to embodiment 5. FIG. 28 is a schematic vertical cross-sectional view taken along line XXVIII-XXVIII in FIG. 27. FIG. 13 is a schematic plan view showing a configuration of a semiconductor device according to a fifth embodiment. FIG. 30 is a schematic longitudinal sectional view taken along line XXX-XXX in FIG. 29 . 13 is a schematic vertical sectional view showing a test process using a semiconductor test device according to a fifth embodiment. FIG. 13 is a bottom schematic view showing the configuration of a pressure structure according to a modified example of the fifth embodiment. FIG.

Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. Note that the same or corresponding parts in the following drawings are given the same reference numbers, and their description will not be repeated.

Embodiment 1.
The configuration of a semiconductor testing device according to the first embodiment will be described. Fig. 1 is a schematic vertical cross-sectional view showing the configuration of a semiconductor testing device 100 according to the first embodiment. As shown in Fig. 1, the semiconductor testing device 100 mainly includes a cooling plate 2, a positioning plate 6, a metal foil 3, a pressure plate 1, an elastic body 4, a pressure mechanism 5, a current supply unit 7, a supply unit 81, a storage unit 82, a waste receiving unit 83, and a transport robot 8.

A semiconductor device 90 is placed on the cooling plate 2. The positioning plate 6 positions the semiconductor device 90. The metal foil 3 is placed on the semiconductor device 90. The pressure plate 1 is placed on the metal foil 3. The elastic body 4 is attached to the pressure plate 1. Specifically, the elastic body 4 may be fitted into the pressure plate 1. The elastic body 4 may be fixed to the pressure plate 1 by contracting so as to clamp the pressure plate 1. The elastic body 4 may be detachable from the pressure plate 1. Other parts may be sandwiched between the elastic body 4 and the pressure plate 1. The elastic body 4 and the pressure plate 1 may be in direct contact with each other.

The pressure mechanism 5 presses the pressure plate 1 and elastic body 4 against the semiconductor device 90. The transport robot 8 transports each of the semiconductor device 90, the metal foil 3, and the pressure plate 1 onto the cooling plate 2. The supply section 81 supplies materials to be used in testing. The storage section 82 stores the semiconductor device 90 after testing is complete. The waste receiving section 83 receives materials that can no longer be reused.

The cooling plate 2 has a second body portion 21 and a second convex portion 22. The second convex portion 22 is connected to the second body portion 21. The second convex portion 22 protrudes from the second body portion 21 toward the semiconductor device 90. In other words, the second convex portion 22 protrudes from the second body portion 21 in a first direction 101. The first direction 101 is a direction from the cooling plate 2 toward the pressure plate 1. The second convex portion 22 forms a mounting surface 23. On the mounting surface 23, the semiconductor device 90 is mounted on the cooling plate 2. The arithmetic mean roughness (Ra) of the mounting surface 23 is, for example, 5 μm or less. The Ra of the mounting surface 23 is preferably 2 μm or less. The arithmetic average roughness (Ra) is a surface property parameter defined in JIS (Japanese Industrial Standards) B0601:2013.

The cooling plate 2 has a function of cooling the semiconductor device 90. The cooling plate 2 may have an air-cooling mechanism. Specifically, a slit (not shown) may be provided in the second body portion 21 of the cooling plate 2. Air may be caused to flow through the slit using a fan (not shown) or the like. The cooling plate 2 may have a water-cooling mechanism. Specifically, a flow path may be provided inside the cooling plate 2. A refrigerant such as water may be caused to flow through the flow path using a circulation device (not shown) or the like. When the temperature of the semiconductor device 90 during testing is 80°C or lower, it is desirable for the cooling plate 2 to have an air-cooling mechanism. When the temperature of the semiconductor device 90 during testing exceeds 80°C, it is desirable for the cooling plate 2 to have a liquid-cooling mechanism.

The cooling plate 2 is made of a material that has high thermal conductivity and is electrically conductive. Specifically, the cooling plate 2 may be made of a metal such as copper or aluminum. The cooling plate 2 may be made of a carbon material, for example.

As shown in FIG. 1 , the positioning plate 6 is on the cooling plate 2. A through hole 61 is provided in the positioning plate 6. The second convex portion 22 of the cooling plate 2 is inside the through hole 61. The positioning plate 6 has a function of positioning the semiconductor device 90 on the second convex portion 22 of the cooling plate 2. The positioning plate 6 may be in contact with the semiconductor device 90. The semiconductor device 90 is positioned inside the through hole 61.

As shown in FIG. 1, the metal foil 3 contacts the semiconductor device 90. The thickness of the metal foil 3 is the first thickness T1. The first thickness T1 is, for example, 10 μm or more and 500 μm or less. The lower limit of the first thickness T1 is not particularly limited, but may be, for example, 50 μm or more, or 100 μm or more. The upper limit of the first thickness T1 is not particularly limited, but may be, for example, 400 μm or less, or 300 μm or less. The metal foil 3 is made of a metal material that has high electrical conductivity and is as soft as aluminum. Specifically, the metal foil 3 is made of, for example, copper, silver, aluminum, or the like.

1, the pressure plate 1 is placed on the semiconductor device 90. The metal foil 3 is between the pressure plate 1 and the semiconductor device 90. The pressure plate 1 has a first main body portion 11, a first convex portion 12, and a pressure surface 13. The first convex portion 12 is connected to the first main body portion 11. The first convex portion 12 protrudes from the first main body portion 11 toward the semiconductor device 90. In other words, the first convex portion 12 protrudes from the first main body portion 11 in a second direction 102. The second direction 102 is a direction from the pressure plate 1 toward the cooling plate 2. The first convex portion 12 forms the pressure surface 13. At the pressure surface 13, the pressure plate 1 is in contact with the metal foil 3. The Ra of the pressure surface 13 is, for example, 5 μm or less. The Ra of the pressure surface 13 is preferably 2 μm or less. 1 is a cross section perpendicular to the pressure surface 13 and passing through the pressure surface 13. In this specification, the direction perpendicular to the pressure surface 13 is defined as the vertical direction Z. A first direction 101 is parallel to the vertical direction Z. A second direction 102 is parallel to the vertical direction Z.

The pressure plate 1 is made of a material having electrical conductivity. Specifically, the pressure plate 1 may be made of a metal material such as aluminum, copper, or stainless steel (SUS). The pressure plate 1 may be made of a carbon material. When the pressure plate 1 is made of copper, it is desirable that the pressure plate 1 be coated with a precious metal. This makes it possible to suppress oxidation of the pressure plate 1 when the pressure plate 1 is made of copper.

1, the pressure plate 1 and the elastic body 4 constitute a pressure structure 10. The elastic body 4 is attached to the first convex portion 12 of the pressure plate 1. The elastic body 4 is in contact with the metal foil 3. The elastic body 4 is in contact with the first main body portion 11 of the pressure plate 1. In other words, the elastic body 4 is sandwiched between the metal foil 3 and the first main body portion 11 of the pressure plate 1. As shown in FIG. 1, the elastic body 4 may be deformed by being sandwiched between the semiconductor device 90 and the first main body portion 11. The heat resistance temperature of the elastic body 4 is, for example, 250°C or higher. The heat resistance temperature of the elastic body 4 is preferably 300°C or higher. The elastic body 4 is made of, for example, silicone rubber or fluororubber.

The pressure mechanism 5 is disposed on the pressure plate 1. The pressure mechanism 5 faces the first body portion 11 of the pressure plate 1. The pressure mechanism 5 is, for example, cylindrical. The pressure mechanism 5 extends, for example, in the vertical direction Z. Each of the pressure mechanism 5, pressure plate 1, elastic body 4, metal foil 3, semiconductor device 90, positioning plate 6 and cooling plate 2 may be fixed so that their relative positions in a direction perpendicular to the vertical direction Z do not fluctuate.

The pressure mechanism 5 can be driven in the vertical direction Z. The pressure mechanism 5 has the function of pressing each of the pressure plate 1 and the elastic body 4 against the semiconductor device 90 via the metal foil 3. The pressure mechanism 5 can apply pressure in the second direction 102 by a hydraulic jack (not shown). The pressure mechanism 5 is made of a material that is highly rigid and conductive. Specifically, the pressure mechanism 5 is made of, for example, SUS or a carbon material.

The current supply unit 7 is electrically connected to each of the second body portion 21 of the cooling plate 2 and the pressure mechanism 5. Each of the second body portion 21 and the pressure mechanism 5 is connected to electrodes of different polarity of the current supply unit 7. The current supply unit 7 can pass a current between the cooling plate 2 and the pressure mechanism 5. Specifically, the current supply unit 7 can pass a direct current between the cooling plate 2 and the pressure mechanism 5, for example.

The supply section 81 stores semiconductor devices 90 that have not been tested, unused metal foils 3, and unused pressure structures 10. The waste receiving section 83 stores the metal foils 3, elastic bodies 4, and pressure plates 1 that have been tested and are no longer reusable.

Figure 2 is a schematic bottom view showing the configuration of the pressure applying structure 10 according to embodiment 1. The schematic bottom view shown in Figure 2 is a schematic bottom view seen in the vertical direction Z. As shown in Figure 2, when viewed in the vertical direction Z, the elastic body 4 surrounds the first convex portion 12 of the pressure applying plate 1. When viewed in the vertical direction Z, the elastic body 4 surrounds the pressure applying surface 13. When viewed in the vertical direction Z, the elastic body 4 is located inside the outer edge of the first main body portion 11 of the pressure applying plate 1. When viewed in the vertical direction Z, the shape of the elastic body 4 is annular. When viewed in the vertical direction Z, the shape of the pressure applying surface 13 is, for example, rectangular.

Figure 3 is a schematic longitudinal cross-sectional view taken along line III-III in Figure 2. The schematic cross-sectional view shown in Figure 3 is perpendicular to the pressure surface 13 and passes through the pressure surface 13. As shown in Figure 3, in a cross section perpendicular to the pressure surface 13 (hereinafter also referred to as a cross-sectional view), the shape of the elastic body 4 is, for example, circular.

As shown in FIG. 3, the thickness of the elastic body 4 in the vertical direction Z is the second thickness T2. The second thickness T2 is the thickness of the elastic body 4 in an undeformed state. As shown in FIG. 3, the height of the first convex portion 12 of the pressure plate 1 in the vertical direction Z is the first height H1. The second thickness T2 is, for example, 1.2 times or more and 1.8 times or less than the first height H1. The lower limit of the second thickness T2 is not particularly limited, but may be, for example, 1.3 times or more than the first height H1, or 1.4 times or more than the first height H1. The upper limit of the second thickness T2 is not particularly limited, but may be, for example, 1.7 times or less than the first height H1, or 1.6 times or less than the first height H1. The width of the elastic body 4 in the left-right direction X is the width W. The width W is the width of the elastic body 4 in an undeformed state. In this specification, the left-right direction X is a direction parallel to the pressure surface 13 in a cross-sectional view. As shown in FIG. 2 , a direction perpendicular to each of the left-right direction X and the up-down direction Z is defined as a front-rear direction Y.

(Testing method for semiconductor devices)
Next, a method for testing the semiconductor device 90 according to the first embodiment will be described. Fig. 4 is a flow diagram that outlines the method for testing the semiconductor device 90 according to the first embodiment. As shown in Fig. 4, the method for testing the semiconductor device 90 according to the first embodiment includes a cooling plate preparation step (S10), a placement step (S20), a pressurizing mechanism preparation step (S30), and a testing step (S40).

First, the cooling plate preparation process (S10) is carried out. Figure 5 is a schematic vertical cross-sectional view showing the cooling plate preparation process (S10). The schematic vertical cross-sectional view shown in Figure 5 is a cross section that is parallel to the vertical direction Z and passes through the second convex portion 22 of the cooling plate 2. As shown in Figure 5, the cooling plate 2 is prepared. A positioning plate 6 is placed on the cooling plate 2.

Next, the configuration of the semiconductor device 90 will be described. FIG. 6 is a schematic plan view showing the configuration of the semiconductor device 90. FIG. 7 is a schematic longitudinal cross-sectional view taken along line VII-VII in FIG. 6. As shown in FIGS. 6 and 7, the semiconductor device 90 has a semiconductor substrate 93, a first electrode 91, a second electrode 92, a covering portion 94, and a gate electrode 97.

A first electrode 91 is provided on the front surface of a semiconductor substrate 93. The first electrode 91 is made of, for example, aluminum. A second electrode 92 is provided on the back surface of the semiconductor substrate 93. From another perspective, the second electrode 92 is on the opposite side to the first electrode 91. The second electrode 92 is formed, for example, by laminating nickel (Ni) and gold (Au).

The gate electrode 97 is provided on the surface of the semiconductor substrate 93. In other words, the gate electrode 97 is provided on the same surface as the first electrode 91. From another perspective, the gate electrode 97 is on the opposite side to the second electrode 92. As shown in FIG. 6, the gate electrode 97 is spaced apart from the first electrode 91.

The covering portion 94 covers a portion of each of the gate electrode 97 and the first electrode 91. The covering portion 94 has a first covering member 95 and a second covering member 96. When viewed in the vertical direction Z, the outer edge of the first covering member 95 surrounds each of the first electrode 91 and the gate electrode 97. When viewed in the vertical direction Z, the outer edge of the second covering member 96 surrounds the gate electrode 97. The second covering member 96 is continuous with the first covering member 95. When viewed in the vertical direction Z, the first covering member 95 surrounds the second covering member 96.

6 and 7, the covering portion 94 covers the outer periphery of the first electrode 91. From another perspective, a part of the covering portion 94 is located on the first direction 101 side with respect to the first electrode 91. The covering portion 94 is made of an insulating material such as polyimide. The covering portion 94 has a function of suppressing the generation of a high electric field. The semiconductor device 90 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) including a semiconductor material such as silicon or silicon carbide, which is a wide-gap semiconductor. Specifically, the semiconductor substrate 93 is made of silicon or silicon carbide. The semiconductor device 90 may be, for example, a Schottky barrier diode or a pn junction diode.

6 and 7, the semiconductor device 90 has a first pressure-applied region 88 and a second pressure-applied region 89. In the first pressure-applied region 88, the pressure surface 13 (see FIG. 1) of the pressure plate 1 is pressed through the metal foil 3. In the second pressure-applied region 89, the elastic body 4 (see FIG. 1) is pressed through the metal foil 3. When viewed in the vertical direction Z, the first pressure-applied region 88 is surrounded by the first covering member 95 of the covering portion 94. When viewed in the vertical direction Z, the first pressure-applied region 88 is a region that includes a part of each of the first electrode 91, the gate electrode 97, and the second covering member 96. When viewed in the vertical direction Z, the first pressure-applied region 88 is surrounded by the first covering member 95. When viewed in the vertical direction Z, the area of the first pressure-applied region 88 is, for example, 0.8 times or more and 1 times or less than the area of the region surrounded by the first covering member 95. The second pressurized region 89 is continuous with the first pressurized region 88. The second pressurized region 89 surrounds the first pressurized region 88.

Next, the placing step (S20) is carried out. FIG. 8 is a schematic vertical cross-sectional view showing the placing step (S20). The schematic vertical cross-sectional view shown in FIG. 8 corresponds to the schematic vertical cross-sectional view shown in FIG. 5. As shown in FIG. 8, the semiconductor device 90 is placed on the placing surface 23 of the cooling plate 2. Specifically, the semiconductor device 90 is transported from the supply unit 81 to the placing surface 23 of the cooling plate 2 by the transport robot 8. Then, the semiconductor device 90 is placed on the placing surface 23 by the transport robot 8. The area of the placing surface 23 is, for example, 1 to 1.2 times the area of the semiconductor device 90 as viewed from the vertical direction Z. On the placing surface 23, the second electrode 92 of the semiconductor device 90 contacts the second convex portion 22 of the cooling plate 2. As a result, the second electrode 92 and the cooling plate 2 are electrically connected.

The metal foil 3 is placed on the semiconductor device 90. In other words, the metal foil 3 is placed on the first electrode 91 and the covering portion 94. Specifically, the metal foil 3 is transported from the supply portion 81 to the mounting surface 23 of the cooling plate 2 by the transport robot 8. Since the semiconductor device 90 is on the mounting surface 23, the metal foil 3 is placed on the semiconductor device 90 by the transport robot 8. The metal foil 3 is in contact with the covering portion 94. The metal foil 3 may be spaced apart from the first electrode 91.

The pressurized structure 10 is placed on the metal foil 3. Specifically, the transfer robot 8 transfers the pressurized structure 10 from the supply section 81 onto the mounting surface 23 of the cooling plate 2. Since the metal foil 3 is on the mounting surface 23, the transfer robot 8 places the pressurized structure 10 on the metal foil 3. The elastic body 4 contacts the metal foil 3. At the pressurized surface 13, the pressurized plate 1 contacts the metal foil 3. This electrically connects the pressurized plate 1 and the metal foil 3.

Next, the pressure mechanism preparation step (S30) is carried out. FIG. 9 is a schematic vertical cross-sectional view showing the pressure mechanism preparation step (S30). The schematic vertical cross-sectional view shown in FIG. 9 corresponds to the schematic vertical cross-sectional view shown in FIG. 5. For ease of explanation, the transport robot 8, the supply section 81, the storage section 82 and the waste receiving section 83 are not shown in FIG. 9. As shown in FIG. 9, the pressure mechanism 5 is disposed on the pressure plate 1. The pressure mechanism 5 is disposed so that the central axis of the pressure mechanism 5 is parallel to the vertical direction Z. The pressure mechanism 5 and the cooling plate 2 are connected to a current supply section 7.

Next, the test process (S40) is performed. FIG. 10 is a schematic vertical cross-sectional view showing the test process (S40). The schematic vertical cross-sectional view shown in FIG. 10 corresponds to the schematic vertical cross-sectional view shown in FIG. 9. The pressure mechanism 5 is driven along the second direction 102.

The pressure mechanism 5 contacts the first body portion 11 of the pressure plate 1. The pressure mechanism 5 presses the pressure structure 10 against the metal foil 3. The elastic body 4 is deformed so as to shrink in the vertical direction Z. The metal foil 3 is sandwiched between the pressure structure 10 and the semiconductor device 90. Specifically, the center of the metal foil 3 is sandwiched between the pressure surface 13 and the first electrode 91. The outer periphery of the metal foil 3 is sandwiched between the elastic body 4 and the covering portion 94. From another perspective, the pressure mechanism 5 presses the pressure surface 13 against the first electrode 91 via the metal foil 3. The pressure mechanism 5 presses the elastic body 4 against the covering portion 94 via the metal foil 3. As a result, the metal foil 3 deforms so as to conform to the surface shapes of the first electrode 91 and the covering portion 94 of the semiconductor device 90. The metal foil 3 is in close contact with each of the first electrode 91 of the semiconductor device 90 and the pressure surface 13 of the pressure plate 1. As a result, the current supply unit 7, the pressure mechanism 5, the pressure plate 1, the metal foil 3 and the first electrode 91 are electrically connected to each other.

Pressure is applied in the second direction 102 by a hydraulic jack and a pressure mechanism 5 (not shown). The lower limit of the applied pressure is not particularly limited, but is desirably 30 kgf/cm2 or ^more . In other words, the lower limit of the applied pressure is not particularly limited, but is desirably 2.94 MPa or more. This can improve the adhesion between each of the cooling plate 2 and the pressure plate 1 and the semiconductor device 90.

The upper limit of the applied pressure is not particularly limited, but is desirably 50 kgf/cm2 ^or less. That is, the upper limit of the applied pressure is not particularly limited, but is desirably 4.9 MPa or less. This makes it possible to prevent the load applied to the semiconductor device 90 from becoming excessively large.

A current is applied between the first electrode 91 and the second electrode 92 of the semiconductor device 90 by the current supply unit 7. This allows the electrical characteristics of the semiconductor device 90 to be tested. As a result of the current being applied, the pressure plate 1, the metal foil 3, the semiconductor device 90, and the cooling plate 2 each generate heat. The cooling plate 2 cools the semiconductor device 90. As the metal foil 3 generates heat, it softens. This causes the metal foil 3 to deform further. As a result, the metal foil 3 is further adhered to the first electrode 91 of the semiconductor device 90 and the pressure plate 1.

After the supply of current is stopped, the pressure mechanism 5 is driven along the first direction 101. The elastic force causes the elastic body 4 to deform so as to return to the state before pressure was applied. The transport robot 8 transports each of the metal foils 3 and pressure structures 10 that are no longer reusable to the waste receiving section 83 (see Figure 8). The transport robot 8 transports the semiconductor devices 90 after testing to the storage section 82 (see Figure 8). In this manner, testing of the semiconductor devices 90 is carried out.

Next, the effects of the semiconductor test apparatus 100 according to the first embodiment will be described.
When the semiconductor testing apparatus 100 does not have the elastic body 4, the pressure mechanism 5 presses only the pressure surface 13 against the semiconductor device 90 via the metal foil 3. In this case, the pressure surface 13 is pressed against only one of the covering portion 94 and the first electrode 91 of the semiconductor device 90.

When the pressure surface 13 is pressed only against the covering portion 94, the metal foil 3 is sandwiched between the pressure surface 13 and the covering portion 94. Therefore, the applied pressure is concentrated on the covering portion 94. From another perspective, the pressure applied to the first electrode 91 is reduced. Therefore, the adhesion between the metal foil 3 and the first electrode 91 is reduced. This increases the electrical resistance between the metal foil 3 and the semiconductor device 90. As a result, it becomes difficult to pass a large current through the semiconductor device 90 during testing.

When the pressure surface 13 is pressed only against the first electrode 91, the pressure applied by the pressure mechanism 5 is concentrated on a portion of the semiconductor device 90. This causes a bias in the adhesion between the second electrode 92 of the semiconductor device 90 and the cooling plate 2. This causes high thermal resistance in the portion where the adhesion between the second electrode 92 and the cooling plate 2 is low. As a result, when current is applied to the semiconductor device 90, a bias in the temperature distribution of the second electrode 92 occurs.

Figure 11 is a schematic bottom view showing the second electrode 92 after the test process in a comparative example not having an elastic body 4. As shown in Figure 11, a discolored portion 111 is formed on the second electrode 92 due to a bias in the temperature distribution of the second electrode 92. Specifically, the discolored portion 111 is formed by a portion of the second electrode 92 outside the first pressurized area 88 becoming hot. The discolored portion 111 is a portion where Ni is precipitated on the Au layer in the second electrode 92. When the semiconductor device 90 is mounted on a printed circuit board or the like, the bonding strength of the semiconductor device 90 is reduced at the discolored portion 111. In other words, the mechanical properties of the semiconductor device 90 are deteriorated.

According to the semiconductor testing device 100 of the first embodiment, the pressure mechanism 5 presses the elastic body 4 against the covering portion 94. This allows the elastic body 4 to deform so as to conform to the surface shape of the covering portion 94. This makes it possible to suppress bias in pressure due to variations in the shape of the covering portion 94.

The semiconductor testing device 100 according to the first embodiment has an elastic body 4. The elastic body 4 is attached to a pressure plate 1. The pressure mechanism 5 presses the pressure surface 13 against the first electrode 91 via the metal foil 3. The pressure mechanism 5 presses the elastic body 4 against the covering portion 94 via the metal foil 3. Therefore, the pressure applied by the pressure mechanism 5 is transmitted to the semiconductor device 90 substantially uniformly in-plane. This makes it possible to suppress an increase in electrical resistance between the metal foil 3 and the semiconductor device 90, and also to suppress deterioration of the mechanical properties of the semiconductor device 90.

The semiconductor test device 100 according to the first embodiment has a metal foil 3. The metal foil 3 is disposed on the first electrode 91 and the covering portion 94. The pressure mechanism 5 presses the pressure surface 13 against the first electrode 91 via the metal foil 3. The pressure mechanism 5 presses the elastic body 4 against the covering portion 94 via the metal foil 3. For this reason, the elastic body 4 does not directly contact the semiconductor device 90. This makes it possible to prevent foreign matter attached to the elastic body 4 or foreign matter generated by dust generation from the elastic body 4 from adhering to the semiconductor device 90. In addition, when the elastic body 4 softens or melts due to heat generation during testing, it is possible to prevent the elastic body 4 from adhering to the semiconductor device 90. As a result, contamination of the semiconductor device 90 can be suppressed.

In addition, the pressure application surface 13 does not directly contact the semiconductor device 90. This makes it possible to prevent scratches on the semiconductor device 90 caused by contact with the pressure application surface 13.

According to the semiconductor testing apparatus 100 of the first embodiment, the elastic body 4 is attached to the pressure plate 1. Therefore, the pressure plate 1 and the elastic body 4 can be transported simultaneously. Furthermore, the relative positional deviation between the pressure plate 1 and the elastic body 4 can be suppressed. Therefore, the test time of the semiconductor device 90 can be reduced.

The semiconductor testing device 100 according to the first embodiment has a metal foil 3. The pressure mechanism 5 presses the pressure surface 13 against the first electrode 91 via the metal foil 3. As a result, when pressure is applied, the metal foil 3 adheres closely to each of the first electrode 91 of the semiconductor device 90 and the pressure plate 1. As a result, an increase in electrical resistance between the metal foil 3 and the semiconductor device 90 can be further suppressed.

The semiconductor testing device 100 according to the first embodiment has a transport robot 8. The transport robot 8 is a mechanism that transports each of the semiconductor device 90, the metal foil 3, and the pressure structure 10 to a position on the cooling plate 2. This makes it possible to automate the work of placing each of the semiconductor device 90, the metal foil 3, and the pressure structure 10 on the cooling plate 2.

According to the semiconductor testing device 100 of the first embodiment, the pressure plate 1 has a first convex portion 12. The first convex portion 12 protrudes from the first body portion 11 toward the semiconductor device 90. The first convex portion 12 forms a pressure surface 13. Therefore, when the covering portion 94 of the semiconductor device 90 covers a part of the first electrode 91, the pressure surface 13 can be pressed only against the first electrode 91 without pressing the pressure surface 13 against the covering portion 94. This makes it possible to more effectively suppress an increase in electrical resistance between the metal foil 3 and the semiconductor device 90.

If the thickness (second thickness T2) of the undeformed elastic body 4 is excessively small, the amount of deformation of the elastic body 4 is small when pressure is applied in the test process (S40). Therefore, the pressure applied from the elastic body 4 to the semiconductor device 90 becomes excessively small. This reduces the adhesion between the second electrode 92 of the semiconductor device 90 and the cooling plate 2. According to the semiconductor testing device 100 of the first embodiment, the second thickness T2 is 1.2 times or more the height (first height H1) of the first convex portion 12. Therefore, it is possible to prevent the second thickness T2 from becoming excessively small. As a result, it is possible to prevent the adhesion between the second electrode 92 of the semiconductor device 90 and the cooling plate 2 from decreasing.

If the thickness (second thickness T2) of the undeformed elastic body 4 is excessively large, the elastic body 4 may fall off from the pressure plate 1 due to its own weight. According to the semiconductor testing device 100 of the first embodiment, the second thickness T2 is 1.8 times or less the height (first height H1) of the first convex portion 12. This makes it possible to prevent the second thickness T2 from becoming excessively large. As a result, it is possible to prevent the elastic body 4 from falling off from the pressure plate 1.

According to the semiconductor testing device 100 of the first embodiment, the elastic body 4 surrounds the pressure surface 13 when viewed in the vertical direction Z. Therefore, when the covering portion 94 of the semiconductor device 90 covers the outer periphery of the first electrode 91, the elastic body 4 can be effectively pressed against the covering portion 94.

The semiconductor device 90, the metal foil 3, and the pressure plate 1 each generate heat due to the current flow in the test process (S40). Therefore, the elastic body 4 is heated in the test process. If the heat resistance temperature of the elastic body 4 is excessively low, the elastic body 4 may melt due to heating of the elastic body 4. If the elastic body 4 melts, it may become impossible to reuse the elastic body 4 after the test process because the elastic body 4 adheres to each of the metal foil 3 and the pressure plate 1. According to the semiconductor test device 100 of the first embodiment, the heat resistance temperature of the elastic body 4 is 250°C or higher. Therefore, melting of the elastic body 4 in the test process (S40) can be suppressed.

According to the semiconductor testing device 100 of the first embodiment, the metal foil 3 is made of copper, silver, aluminum, or the like. In other words, the metal foil 3 is made of a soft metal. Therefore, when the metal foil 3 comes into contact with the first electrode 91 of the semiconductor device 90, the occurrence of scratches on the first electrode 91 can be suppressed.

According to the semiconductor testing device 100 of the first embodiment, the thickness of the metal foil 3 is 10 μm or more and 500 μm or less. Therefore, compared to when the thickness of the metal foil 3 is excessively thin, the metal foil 3 can be prevented from breaking. Also, compared to when the thickness of the metal foil 3 is excessively thick, the metal foil 3 deforms easily. Therefore, in the test of the semiconductor device 90, the metal foil 3 deforms, thereby further improving the adhesion between the pressure plate 1 and the semiconductor device 90.

According to the semiconductor testing device 100 of the first embodiment, the Ra of the mounting surface 23 of the cooling plate 2 is, for example, 5 μm or less. This can further improve the adhesion between the cooling plate 2 and the semiconductor device 90 on the mounting surface 23.

According to the semiconductor testing device 100 of the first embodiment, the Ra of the pressure surface 13 of the pressure plate 1 is, for example, 5 μm or less. This makes it possible to prevent the pressure surface 13 from damaging the semiconductor device 90 when the pressure surface 13 is pressed against the semiconductor device 90 via the metal foil 3.

When the cooling plate 2 does not have the second convex portion 22, the heat transferred from the semiconductor device 90 to the second body portion 21 of the cooling plate 2 is transferred in the vertical direction Z as well as in the direction perpendicular to the vertical direction Z. As a result, the temperature of the center of the semiconductor device 90 becomes higher, and the temperature of the peripheral portion of the semiconductor device 90 becomes lower. In other words, a bias in the temperature distribution of the semiconductor device 90 occurs. According to the semiconductor testing device 100 of the first embodiment, the cooling plate 2 has the second body portion 21 and the second convex portion 22. The second convex portion 22 protrudes from the second body portion 21 toward the semiconductor device 90. As a result, the heat transferred from the semiconductor device 90 to the cooling plate 2 is transferred to the second convex portion 22 and then to the second body portion 21. This makes it possible to suppress the transfer of heat in the direction perpendicular to the vertical direction Z. As a result, the bias in the temperature distribution of the semiconductor device 90 can be suppressed.

If the area of the mounting surface 23 of the cooling plate 2 is excessively small, a part of the second electrode 92 of the semiconductor device 90 does not contact the cooling plate 2. During testing, the temperature of the part of the second electrode 92 that is not in contact with the cooling plate 2 is higher than the temperature of the part of the second electrode 92 that is in contact with the cooling plate 2. This causes a bias in the temperature distribution of the semiconductor device 90. According to the semiconductor testing device 100 of the first embodiment, the area of the mounting surface 23 is at least one time the area of the semiconductor device 90 as viewed in the vertical direction Z. This allows the entire surface of the second electrode 92 to contact the cooling plate 2. This improves the in-plane uniformity of the temperature distribution of the semiconductor device 90.

If the area of the mounting surface 23 of the cooling plate 2 is excessively large, the heat transferred from the semiconductor device 90 to the second convex portion 22 is dissipated in a direction parallel to the mounting surface 23. This causes a bias in the temperature distribution of the semiconductor device 90. According to the semiconductor testing device 100 of embodiment 1, the area of the mounting surface 23 is 1.2 times or less the area of the semiconductor device 90 as viewed in the vertical direction Z. This makes it possible to prevent the area of the mounting surface 23 from becoming excessively large. This makes it possible to prevent a bias in the temperature distribution of the semiconductor device 90.

(Modification of the first embodiment)
The configuration of the semiconductor test device 100 is not limited to the above configuration. FIG. 12 is a schematic vertical cross-sectional view showing a test process (S40) using the semiconductor test device 100 according to the first modification of the first embodiment. The schematic vertical cross-sectional view shown in FIG. 12 corresponds to the schematic vertical cross-sectional view shown in FIG. 10. For convenience of explanation, the pressurizing mechanism 5 and the current supply unit 7 are not shown in FIG. 12. As shown in FIG. 12, the semiconductor test device 100 may have, for example, a cooling metal foil 9. The cooling metal foil 9 is placed on the placement surface 23 of the cooling plate 2. The cooling metal foil 9 may cover the placement surface 23. The cooling metal foil 9 is sandwiched between the second convex portion 22 of the cooling plate 2 and the second electrode 92 of the semiconductor device 90.

The thickness of the cooling metal foil 9 is, for example, 10 μm or more and 500 μm or less. The cooling metal foil 9 is made of a metal material that has high electrical conductivity and is as soft as aluminum. Specifically, the cooling metal foil 9 is made of, for example, copper, silver, or aluminum. When pressure is applied by the pressure mechanism 5, the cooling metal foil 9 deforms. This allows the cooling metal foil 9 to be in close contact with each of the second electrode 92 of the semiconductor device 90 and the cooling plate 2. In other words, the second electrode 92 can be in close contact with the cooling plate 2 via the cooling metal foil 9. Therefore, the heat generated in the semiconductor device 90 can be more effectively transferred to the cooling plate 2. This allows the semiconductor device 90 to be effectively cooled.

Figure 13 is a schematic vertical cross-sectional view showing a test process using a semiconductor test device 100 according to a second modified example of the first embodiment. The schematic vertical cross-sectional view shown in Figure 13 corresponds to the schematic vertical cross-sectional view shown in Figure 12. As shown in Figure 13, the metal foil 3 may have a first metal foil 31 and a second metal foil 32. In other words, the metal foil 3 may be formed by laminating a plurality of metal foils. The number of the plurality of metal foils may be two or three or more. The second metal foil 32 is placed on the first metal foil 31. The total value (third thickness T3) of the thickness of the first metal foil 31 and the thickness of the second metal foil 32 is, for example, 10 μm or more and 500 μm or less. Each of the first metal foil 31 and the second metal foil 32 is, for example, made of copper, silver, aluminum, or the like.

When pressure is applied by the pressure mechanism 5, the second metal foil 32 can slide on the first metal foil 31. Therefore, the amount by which the first metal foil 31 slides on the first electrode 91 can be reduced compared to when the semiconductor testing device 100 does not have the second metal foil 32. This makes it possible to more effectively prevent scratches on the first electrode 91.

The configuration of the semiconductor device 90 tested using the semiconductor test apparatus 100 according to the first embodiment is not limited to the above configuration. FIG. 14 is a schematic plan view showing the configuration of a first modified example of the semiconductor device 90. As shown in FIG. 14, the semiconductor device 90 may further have a current sense electrode 98 and a temperature sense electrode 99. The current sense electrode 98 is provided on the surface of the semiconductor device. In other words, the current sense electrode 98 is on the opposite side of the second electrode 92. The temperature sense electrode 99 is provided on the surface of the semiconductor device 90. In other words, the temperature sense electrode 99 is on the opposite side of the second electrode 92. When viewed in the vertical direction Z, the outer edge of the second covering member 96 surrounds each of the gate electrode 97, the current sense electrode 98, and the temperature sense electrode 99. The semiconductor test apparatus 100 according to the first embodiment can also perform a test on the first modified example of the semiconductor device 90.

15 is a schematic plan view showing the configuration of the second modified example of the semiconductor device 90. As shown in FIG. 15, the semiconductor device 90 may not have a gate electrode 97. As shown in FIG. 15, the shape of the semiconductor device 90 may be rectangular. According to the semiconductor testing device 100 of the first embodiment, the second modified example of the semiconductor device 90 can also be tested by changing the shapes of the elastic body 4 and the pressure surface 13 of the pressure plate 1. Specifically, as shown in FIG. 15, the shape of the pressure surface 13 is changed so that the first pressure-applied area 88 is located inside the first electrode 91 when viewed in the vertical direction Z. The shape of the elastic body 4 is changed so that the second pressure-applied area 89 is located inside the semiconductor substrate 93 when viewed in the vertical direction Z.

Embodiment 2.
Next, the configuration of the semiconductor test device 100 according to the second embodiment will be described. The semiconductor test device 100 according to the second embodiment differs from the semiconductor test device 100 according to the first embodiment mainly in that the pressure plate 1 has a support portion, and other points are similar to the configuration of the semiconductor test device 100 according to the first embodiment. The following description will focus on the points that differ from the configuration of the semiconductor test device 100 according to the first embodiment.

Figure 16 is a schematic bottom view showing the configuration of a pressurized structure 10 according to embodiment 2. The schematic bottom view shown in Figure 16 corresponds to the schematic bottom view shown in Figure 2. Figure 17 is a schematic vertical cross-sectional view taken along line XVII-XVII in Figure 16. The schematic vertical cross-sectional view shown in Figure 17 corresponds to the schematic vertical cross-sectional view shown in Figure 3.

16 and 17, the pressure plate 1 may have a first support portion 14. The pressure plate 1 has, for example, four first support portions 14. The first support portions 14 are connected to the first main body portion 11. The first support portions 14 protrude in the same direction as the first convex portion 12. Specifically, the first support portions 14 protrude in a direction from the first main body portion 11 toward the first convex portion 12. The first support portions 14 are spaced apart from the first convex portion 12. When viewed in the vertical direction Z, the first support portions 14 are located outside the first convex portion 12. The elastic body 4 is located between the first convex portion 12 and the first support portions 14. From another perspective, the first convex portion 12 and the first support portions 14 support the elastic body 4 by sandwiching it between them.

In a direction parallel to the pressure surface 13, the distance between the first convex portion 12 and the first support portion 14 is distance D. Distance D is, for example, 0.9 to 0.95 times the width W (see FIG. 3) of the undeformed elastic body 4. This allows the elastic body 4 to be sandwiched between the first convex portion 12 and the first support portion 14. When the pressure plate 1 has multiple first support portions 14, the distance D between each of the multiple first support portions 14 and the first convex portion 12 may be different.

17, the height of the first support portion 14 in the vertical direction Z is set to a second height H2. The second height H2 is smaller than the height (first height H1) of the first protrusion 12. Specifically, the second height H2 is, for example, 100 μm smaller than the first height H1.

Figure 18 is a schematic vertical cross-sectional view showing a test process (S40) using a semiconductor test device 100 according to embodiment 2. The schematic vertical cross-sectional view shown in Figure 18 corresponds to the schematic vertical cross-sectional view shown in Figure 12. As shown in Figure 18, when pressure is applied by the pressure mechanism 5 (see Figure 10), the first support portion 14 may be spaced apart from the metal foil 3.

According to the semiconductor testing device 100 of the second embodiment, the pressure plate 1 has a first support portion 14. The first support portion 14 is spaced apart from the first convex portion 12. The elastic body 4 is between the first convex portion 12 and the first support portion 14. Therefore, the elastic body 4 is pressed against the semiconductor device 90 via the metal foil 3 while being sandwiched between the first convex portion 12 and the first support portion 14. This makes it possible to suppress the position of the elastic body 4 from shifting in a direction parallel to the pressure surface 13. As a result, the elastic body 4 can be pressed against the semiconductor device 90 more effectively.

The structure of the pressure plate 1 of the semiconductor testing device 100 according to the second embodiment is not limited to the above. FIG. 19 is a schematic bottom view showing the configuration of a pressure structure 10 according to a modified example of the second embodiment. The schematic bottom view shown in FIG. 19 corresponds to the schematic bottom view shown in FIG. 2. FIG. 20 is a schematic vertical cross-sectional view taken along line XX-XX in FIG. 19. The schematic vertical cross-sectional view shown in FIG. 20 corresponds to the schematic vertical cross-sectional view shown in FIG. 3.

As shown in Figures 19 and 20, the pressure plate 1 may have a second support portion 15. The second support portion 15 is connected to the first main body portion 11. The second support portion 15 is spaced apart from the first convex portion 12. When viewed in the vertical direction Z, the second support portion 15 surrounds the first convex portion 12. A groove portion 19 is formed between the first convex portion 12 and the second support portion 15.

The width of the groove 19 in the direction parallel to the pressure surface 13 decreases with increasing distance from the first main body 11. This makes it possible to prevent the elastic body 4 from falling off the pressure plate 1. In a cross section perpendicular to the pressure surface 13, the cross-sectional area of the groove 19 is, for example, 0.95 times or more the cross-sectional area of the elastic body 4. This allows the elastic body 4 to elastically deform inside the groove 19. The cross-sectional area of the groove 19 is the area of the area surrounded by the first main body 11, the first convex portion 12, and the second support portion 15. Figure 21 is a schematic vertical cross-sectional view showing the area occupied by the groove 19 according to a modified example of the second embodiment. The schematic vertical cross-sectional view shown in Figure 21 corresponds to the schematic vertical cross-sectional view shown in Figure 20. For convenience of explanation, the elastic body 4 is not shown in Figure 21. In Figure 21, the area shown by multiple dots indicates the area occupied by the groove 19.

The height of the second support portion 15 in the vertical direction Z is a third height H3. The third height H3 is smaller than the height (first height H1) of the first protrusion portion 12. Specifically, the third height H3 is, for example, 100 μm smaller than the first height H1.

Embodiment 3.
Next, the configuration of the semiconductor test device 100 according to the third embodiment will be described. The semiconductor test device 100 according to the third embodiment differs from the semiconductor test device 100 according to the first embodiment mainly in that the cross-sectional shape of the elastic body 4 is polygonal, and other points are similar to the configuration of the semiconductor test device 100 according to the first embodiment. The following description will focus on the points that differ from the configuration of the semiconductor test device 100 according to the first embodiment.

22 is a schematic vertical cross-sectional view showing a test process using a semiconductor test device 100 according to the third embodiment. The schematic vertical cross-sectional view shown in FIG. 22 corresponds to the schematic vertical cross-sectional view shown in FIG. 12. FIG. 23 is an enlarged schematic cross-sectional view showing the configuration of the elastic body 4 according to the third embodiment. The cross section shown in FIG. 23 is a cross section parallel to the vertical direction Z. As shown in FIG. 22 and FIG. 23, in a cross section perpendicular to the pressure surface 13, the shape of the elastic body 4 may be polygonal. Specifically, in a cross section perpendicular to the pressure surface 13, the shape of the elastic body 4 may be, for example, a rectangle. The shape of the elastic body 4 may be, for example, a trapezoid. Specifically, in a cross section perpendicular to the pressure surface 13, the width of the elastic body 4 may become smaller toward the second direction 102. The shape of the elastic body 4 may be, for example, a square.

When the cross-sectional shape of the elastic body 4 is polygonal, the elastic force in the direction parallel to the cross section is greater than when the cross-sectional shape of the elastic body 4 is circular. Therefore, by changing the cross-sectional shape of the elastic body 4, the pressure applied from the elastic body 4 to the semiconductor device 90 can be changed.

The configuration of the elastic body 4 is not limited to the above. FIG. 24 is an enlarged schematic cross-sectional view showing the configuration of a modified example of the elastic body 4 according to the third embodiment. The enlarged schematic cross-sectional view shown in FIG. 24 corresponds to the enlarged schematic cross-sectional view shown in FIG. 23. As shown in FIG. 24, the elastic body 4 may have a base 41 and a protrusion 42. The protrusion 42 is connected to the base 41. The protrusion 42 protrudes from the base 41 toward the semiconductor device 90. In other words, the protrusion 42 protrudes in the second direction 102 relative to the base 41. The elastic body 4 may have a plurality of protrusions 42. When the covering portion 94 of the semiconductor device 90 has unevenness, the shape of the protrusion 42 of the elastic body 4 is determined so as to match the unevenness of the covering portion 94, so that the elastic body 4 can be stably pressed against the semiconductor device 90.

Embodiment 4.
Next, the configuration of the semiconductor test device 100 according to the fourth embodiment will be described. The semiconductor test device 100 according to the fourth embodiment differs from the semiconductor test device 100 according to the first embodiment mainly in that after the test on the electrical characteristics of the semiconductor device 90 is performed in the test process (S40), the elastic body 4 is restored to substantially the same shape as the shape of the elastic body 4 before the test, and the other points are the same as the configuration of the semiconductor test device 100 according to the first embodiment. The following mainly describes the points that are different from the configuration of the semiconductor test device 100 according to the first embodiment.

Figure 25 is a schematic vertical cross-sectional view showing the state in which the pressure applied from the pressure mechanism 5 to the elastic body 4 is released after the electrical characteristics of the semiconductor device 90 have been tested in the testing process (S40). As shown in Figure 25, after the electrical characteristics of the semiconductor device 90 have been tested, the pressure mechanism 5 moves away from the pressure plate 1. The pressure load from the pressure mechanism 5 to the pressure structure 10 is eliminated. From another perspective, the pressure load from the pressure mechanism 5 to the elastic body 4 is eliminated.

The elastic force of the elastic body 4 may restore the elastic body 4 to a shape substantially the same as the shape of the elastic body 4 before the test step (S40). Specifically, the thickness (third thickness T3) of the elastic body 4 in the vertical direction Z after the pressure load from the pressure mechanism 5 to the elastic body 4 is removed is substantially the same as the thickness (second thickness T2, see FIG. 3) of the elastic body 4 in the vertical direction Z before the test. The third thickness T3 is, for example, 95% or more and 100% or less of the second thickness T2.

25, the metal foil 3 may be plastically deformed by the pressure load of the pressure structure 10. After the pressure load from the pressure mechanism 5 to the pressure structure 10 is removed, the metal foil 3 may maintain the shape after the plastic deformation.

26 is a schematic vertical cross-sectional view showing a test process (S40) using a semiconductor test device 100 according to embodiment 4. The schematic vertical cross-sectional view shown in FIG. 26 corresponds to the schematic vertical cross-sectional view shown in FIG. 10. In FIG. 26, the test process (S40) after the pressure structure 10 has been used in the test process (S40) at least once is shown. As shown in FIG. 26, even after the pressure structure 10 has been used in the test process (S40) at least once, the elastic body 4 may be deformed so as to shrink in the vertical direction Z by applying pressure to the pressure structure 10 using the pressure mechanism 5.

According to the semiconductor testing device 100 of the fourth embodiment, the third thickness T3 is 95% or more and 100% or less of the second thickness T2. Therefore, after the testing process (S40), the thickness of the elastic body 4 can be prevented from becoming excessively smaller than the height (first height H1) of the first convex portion 12 of the pressure plate 1. As a result, even if the pressure structure 10 is used repeatedly, the deterioration of the adhesion between the second electrode 92 of the semiconductor device 90 and the cooling plate 2 can be prevented.

Furthermore, according to the semiconductor testing device 100 of the fourth embodiment, even if the elastic body 4 is used repeatedly, the pressure applied from the elastic body 4 to the semiconductor device 90 due to the elastic force of the elastic body 4 can be prevented from decreasing. Therefore, the pressure structure 10 can be used repeatedly. This reduces the frequency of replacing the pressure structure 10. As a result, the time required for the mounting step (S20) can be reduced, and the stability of the pressure applied from the elastic body 4 to the semiconductor device 90 can be improved.

According to the semiconductor testing device 100 of the fourth embodiment, after the pressure load on the pressure structure 10 by the pressure mechanism 5 is removed, the metal foil 3 maintains the shape after plastic deformation due to pressure. Therefore, after the pressure load on the pressure structure 10 by the pressure mechanism 5 is removed, the elastic force of the metal foil 3 attempting to restore the shape of the metal foil 3 before the test can be reduced. This makes it possible to prevent pressure from being applied from the metal foil 3 to the semiconductor device 90 in an unintended direction. As a result, the pressure applied to the semiconductor device 90 can be precisely controlled.

Embodiment 5.
Next, the configuration of the semiconductor test device 100 according to the fifth embodiment will be described. The semiconductor test device 100 according to the fifth embodiment differs from the semiconductor test device 100 according to the first embodiment mainly in that the first convex portion 12 has a plurality of convex members, and the other points are similar to the configuration of the semiconductor test device 100 according to the first embodiment. The following description will focus on the points that differ from the configuration of the semiconductor test device 100 according to the first embodiment.

Figure 27 is a schematic bottom view showing the configuration of a pressurized structure 10 relating to embodiment 5. The schematic bottom view shown in Figure 27 corresponds to the schematic bottom view shown in Figure 2. Figure 28 is a schematic vertical cross-sectional view taken along line XXVIII-XXVIII in Figure 27. The schematic vertical cross-sectional view shown in Figure 28 corresponds to the schematic vertical cross-sectional view shown in Figure 3.

27 and 28, the first convex portion 12 may have a plurality of convex members. Specifically, the first convex portion 12 has a first convex member 51 and a second convex member 52. The first convex member 51 is connected to the first main body portion 11. The first convex member 51 protrudes from the first main body portion 11 in the second direction 102. The second convex member 52 is connected to the first main body portion 11. The second convex member 52 protrudes from the first main body portion 11 in the second direction 102. The second convex member 52 is spaced apart from the first convex member 51. The height of the first convex member 51 in the vertical direction Z is a first height H1. In the vertical direction Z, the height of the second convex member 52 is substantially the same as the first height H1.

The pressure surface 13 has a first pressure surface portion 71 and a second pressure surface portion 72. The first pressure surface portion 71 is formed by a first convex member 51. The second pressure surface portion 72 is formed by a second convex member 52. The second convex member 52 is spaced apart from the first convex member 51. In the vertical direction Z, the second pressure surface portion 72 is substantially in the same position as the first pressure surface portion 71. The size of each of the first convex member 51 and the second convex member 52 and the position in the direction parallel to the pressure surface 13 are changed to match the configuration of the semiconductor device 90.

27 and 28, a part of the elastic body 4 is between the first convex member 51 and the second convex member 52. The first convex member 51 and the second convex member 52 sandwich, for example, the elastic body 4. When viewed in the vertical direction Z, the elastic body 4 surrounds each of the first convex member 51 and the second convex member 52.

29 is a schematic plan view showing the configuration of a semiconductor device 90 according to the fifth embodiment. The schematic plan view shown in FIG. 29 corresponds to the schematic plan view shown in FIG. 6. FIG. 30 is a schematic longitudinal sectional view taken along the line XXX-XXX in FIG. 29. The schematic longitudinal sectional view shown in FIG. 30 corresponds to the schematic longitudinal sectional view shown in FIG. 7. As shown in FIGS. 29 and 30, the first electrode 91 may have a plurality of electrode portions. Specifically, the first electrode 91 may have a first electrode portion 68 and a second electrode portion 69. The number of electrode portions that the first electrode 91 has is the same as the number of convex members that the first convex portion 12 has. The first electrode portion 68 and the second electrode portion 69 may be separated from each other by a covering portion 94. When viewed in the vertical direction Z, each of the first electrode portion 68 and the second electrode portion 69 is surrounded by a covering portion 94.

29, the semiconductor device 90 has a first temperature sense electrode 99A, a second temperature sense electrode 99K, a current sense electrode 98, and a first sense electrode 91S. The first temperature sense electrode 99A is an anode. The second temperature sense electrode 99K is a cathode.

Each of the first temperature sense electrode 99A, the second temperature sense electrode 99K, the gate electrode 97, the current sense electrode 98, and the first sense electrode 91S is provided on the surface of the semiconductor substrate 93. In other words, each of the first temperature sense electrode 99A, the second temperature sense electrode 99K, the gate electrode 97, the current sense electrode 98, and the first sense electrode 91S is provided on the same surface as the surface on which the first electrode 91 is provided.

The first electrode 91, the first temperature sense electrode 99A, the second temperature sense electrode 99K, the gate electrode 97, the current sense electrode 98, and the first sense electrode 91S are spaced apart from each other. When viewed in the vertical direction Z, the first temperature sense electrode 99A, the second temperature sense electrode 99K, the gate electrode 97, the current sense electrode 98, and the first sense electrode 91S are surrounded by the covering portion 94.

29 and 30, the first pressure-applied area 88 has a first portion 86 and a second portion 87. When viewed in the vertical direction Z, the first portion 86 overlaps the first electrode portion 68. In the first portion 86, the first pressure surface portion 71 is pressed via the metal foil 3. When viewed in the vertical direction Z, the second portion 87 overlaps the second electrode portion 69. In the second portion 87, the second pressure surface portion 72 is pressed via the metal foil 3.

When viewed in the up-down direction Z, each of the first portion 86 and the second portion 87 is surrounded by the covering portion 94. The second pressurized region 89 is continuous with each of the first portion 86 and the second portion 87. The second pressurized region 89 surrounds each of the first portion 86 and the second portion 87.

Figure 31 is a schematic vertical cross-sectional view showing a test process (S40) using a semiconductor testing device 100 according to embodiment 5. The schematic vertical cross-sectional view shown in Figure 31 corresponds to the schematic vertical cross-sectional view shown in Figure 12. As shown in Figure 31, the first pressure surface portion 71 is pressed against the first electrode portion 68 via the metal foil 3. The second pressure surface portion 72 is pressed against the second electrode portion 69 via the metal foil 3.

According to the semiconductor testing device 100 of the fifth embodiment, the first convex portion 12 has a first convex member 51 and a second convex member 52. Therefore, even if the first electrode 91 of the semiconductor device 90 has a first electrode portion 68 and a second electrode portion 69, the first electrode portion 68 and the second electrode portion 69 can be pressurized substantially simultaneously.

According to the semiconductor testing device 100 of the fifth embodiment, a part of the elastic body 4 is between the first convex member 51 and the second convex member 52. Therefore, the elastic body 4 is pressed against the semiconductor device 90 via the metal foil 3 while filling the gap between the first convex member 51 and the second convex member 52. This allows the pressure mechanism 5 to be electrically connected to each of the first electrode portion 68 and the second electrode portion 69, and to apply a substantially uniform pressure to the semiconductor device 90. As a result, the in-plane uniformity of the temperature distribution of the semiconductor device 90 can be further improved.

The configuration of the pressure plate 1 of the semiconductor testing device 100 according to the fifth embodiment is not limited to the above configuration. FIG. 32 is a bottom schematic diagram showing the configuration of the pressure structure 10 according to a modified example of the fifth embodiment. The bottom schematic diagram shown in FIG. 32 corresponds to the bottom schematic diagram shown in FIG. 2. As shown in FIG. 32, the first convex member 51 may have a third convex member 53. The third convex member 53 is spaced apart from each of the first convex member 51 and the second convex member 52. The height of the third convex member 53 in the vertical direction Z is substantially the same as the first height H1 (see FIG. 28).

The pressure surface 13 may have a third pressure surface portion 73. The third pressure surface portion 73 is formed by a third convex member 53. The third pressure surface portion 73 is spaced apart from each of the first pressure surface portion 71 and the second pressure surface portion 72. In the testing process (S40), the third pressure surface portion 73 is pressed against the gate electrode 97 (see FIG. 29) via the metal foil 3.

According to the semiconductor testing device 100 of the fifth embodiment, the pressure surface 13 has a third pressure surface portion 73. In the testing process (S40), the third pressure surface portion 73 is pressed against the gate electrode 97 via the metal foil 3. Therefore, the pressure structure 10 can be actively electrically connected to the gate electrode 97 while being electrically connected to each of the first electrode portion 68 and the second electrode portion 69. Therefore, the stability of the electrical connection between the pressure mechanism 5 and the gate electrode 97 can be improved. This makes it possible to stabilize the potential of the gate electrode 97. As a result, the stability of the current flowing through the semiconductor device 90 during testing can be improved.

The embodiments disclosed herein are illustrative in all respects and should not be considered limiting. The scope of the present disclosure is indicated by the claims, not the above description, and is intended to include the meaning equivalent to the claims and all modifications within the scope.

1 Pressure plate, 2 Cooling plate, 3 Metal foil, 4 Elastic body, 5 Pressure mechanism, 6 Positioning plate, 7 Current supply unit, 8 Transport robot, 9 Cooling metal foil, 10 Pressure structure, 11 First main body, 12 First convex portion, 13 Pressure surface, 14 First support portion, 15 Second support portion, 19 Groove portion, 21 Second main body, 22 Second convex portion, 23 Placement surface, 31 First metal foil, 32 Second metal foil, 41 Base portion, 42 Protrusion portion, 51 First convex member, 52 Second convex member, 53 Third convex member, 61 Through hole, 68 First electrode portion, 69 Second electrode portion, 71 First pressure surface portion, 72 Second pressure surface portion, 73 Third pressure surface portion, 81 Supply portion, 82 Storage portion, 83 Waste receiving portion, 86 First portion, 87 Second portion, 88 First pressure-applied area, 89 second pressure-applied area, 90 semiconductor device, 91 first electrode, 91S sense electrode of first electrode, 92 second electrode, 93 semiconductor substrate, 94 covering portion, 95 first covering member, 96 second covering member, 97 gate electrode, 98 current sense electrode, 99 temperature sense electrode, 99A first temperature sense electrode, 99K second temperature sense electrode, 100 semiconductor testing device, 101 first direction, 102 second direction, 111 discolored portion, D distance, H1 first height, H2 second height, H3 third height, T1 first thickness, T2 second thickness, T3 third thickness, W width, X left-right direction, Y front-back direction, Z up-down direction.

Claims (9)

A semiconductor testing apparatus for testing a semiconductor device including a first electrode, a second electrode opposite to the first electrode, and a covering portion covering a part of the first electrode,
a cooling plate on which the semiconductor device is placed and which is electrically connected to the second electrode;
A metal foil disposed on the first electrode and the covering portion;
A pressure plate including a pressure surface and placed on the metal foil ;
a current supply unit electrically connected to each of the cooling plate and the pressure plate and configured to supply a current between the first electrode and the second electrode;
a pressure mechanism that presses the pressure surface against the first electrode via the metal foil and presses the elastic body against the covering portion via the metal foil ,
the pressure plate includes a first body portion in contact with the pressure mechanism, and a first protrusion portion connected to the first body portion and protruding from the first body portion toward the semiconductor device,
The first protrusion forms the pressure surface,
The elastic body is attached to the first convex portion . The semiconductor testing apparatus of claim 1, further comprising a mechanism for transporting each of the semiconductor device, the metal foil, and the pressure plate to a position on the cooling plate. the pressure plate includes a support portion connected to the first body portion and spaced apart from the first protrusion,
3. The semiconductor testing device according to claim 1 , wherein the elastic body is disposed between the first protrusion and the support portion. 3. The semiconductor testing device according to claim 1 , wherein a thickness of the elastic body in a direction perpendicular to the pressure surface is 1.2 to 1.8 times a height of the first convex portion. 3. The semiconductor testing device according to claim 1, wherein the elastic body surrounds the pressure application surface when viewed in a direction perpendicular to the pressure application surface. 3. The semiconductor testing device according to claim 1, wherein the elastic body has a heat-resistant temperature of 250[deg.] C. or higher. the cooling plate includes a second body portion and a second protrusion portion that is connected to the second body portion and protrudes from the second body portion toward the semiconductor device,
3. The semiconductor testing apparatus according to claim 1, wherein the semiconductor device is placed on the second convex portion. The metal foil is made of aluminum, silver or copper,
3. The semiconductor testing device according to claim 1, wherein the metal foil has a thickness of 10 [mu]m or more and 500 [mu]m or less. 3. The semiconductor testing device according to claim 1, wherein the elastic body has a polygonal shape in a cross section perpendicular to the pressure surface.

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