JP7599130B2 - Laser Processing Equipment - Google Patents

Description

This disclosure relates to a laser processing device.

A laser processing device irradiates a workpiece with laser light and performs marking processing such as characters on the surface of the workpiece (for example, see Patent Document 1). This laser processing device includes a laser light source that emits laser light, and optical components such as a galvanometer mirror that changes the direction of the laser light emitted from the laser light source based on the desired characters to be marked and scans the workpiece.

However, if impurities floating in the air, such as dust particles, adhere to optical components, the output of the laser light irradiated on the workpiece may decrease, and the desired processing state may not be obtained. For this reason, it is necessary to prevent the adhesion of impurities to optical components. One method of preventing the adhesion of impurities is to hermetically seal the case that houses the optical components (see, for example, Patent Document 2).

JP 2007-61843 A JP 2006-54366 A

However, this method requires a sealing structure such as a hermetic seal, and while it is effective for small optical components such as semiconductor light-emitting elements (e.g. laser diodes), it is technically difficult to apply this method to large laser processing equipment. In addition, the airtight sealing method causes the problem of condensation due to moisture. To prevent condensation, it is necessary to place a desiccant in the housing chamber in which the optical components are placed, and to replace the desiccant, which is time-consuming.

A laser processing device according to one aspect of the present disclosure includes a laser light source that emits laser light for processing an object to be processed, a scanning unit that scans the object to be processed with the laser light, a control unit that controls the laser light source and the scanning unit, a member to be adhered that transmits the laser light, and a dust collection unit having a position change unit that changes the irradiation position of the laser light on the member to be adhered, and the member to be adhered is disposed on the passage path of the laser light transmitted by the optical member or at a position where the reflected laser light is irradiated.

According to one aspect of the present disclosure, it is possible to provide a laser processing device that can suppress the adhesion of impurities.

FIG. 1 is a schematic diagram showing the configuration of a laser processing apparatus according to the first embodiment. FIG. 2 is a schematic diagram showing the configuration of a laser processing apparatus according to the second embodiment. FIG. 3 is a schematic diagram showing the configuration of a laser processing apparatus according to the third embodiment. FIG. 4 is a schematic diagram showing the configuration of a laser processing apparatus according to the fourth embodiment. FIG. 5 is a schematic diagram showing the configuration of a laser processing apparatus according to the fifth embodiment. FIG. 6 is a schematic diagram showing the configuration of a laser processing apparatus according to the sixth embodiment. FIG. 7 is a schematic diagram showing the configuration of a laser processing apparatus according to the seventh embodiment. FIG. 8 is a schematic diagram showing the configuration of a laser processing apparatus according to the eighth embodiment. FIG. 9 is a schematic diagram showing the configuration of a laser processing apparatus according to the ninth embodiment. FIG. 10 is a schematic configuration diagram showing a laser processing apparatus according to the tenth embodiment.

First Embodiment
The first embodiment will be described below.
1 irradiates a workpiece W with a laser beam LW to process the workpiece W. The laser processing device 101 is, for example, a laser marking device that applies marking to the workpiece W. Processing using the laser beam LW includes a process of removing (cutting, drilling, etc.) a part of the workpiece W, a process of discoloring or altering a part of the workpiece W by the heat of the laser beam LW, and the like.

As shown in FIG. 1, the laser processing apparatus 101 includes a laser emission unit 11 and a laser head 12 .
The laser emission unit 11 has a control unit 21 and a laser light source 22. The control unit 21 controls the overall operation of the laser processing apparatus 101. The control unit 21 is electrically connected to the laser light source 22 and controls the driving of the laser light source 22. The control unit 21 is also electrically connected to the laser head 12 and controls the driving of the laser head 12.

The laser light source 22 emits laser light LW containing a predetermined wavelength. This laser light LW is intended to process the workpiece W. The wavelength contained in this laser light LW is, for example, the wavelength of ultraviolet light (e.g., 355 nm).

The laser light source 22 includes a laser oscillator 23 , a wavelength conversion unit 24 , and a filter 27 .
The laser oscillator 23 generates a fundamental wave. The fundamental wave is a laser beam having a fundamental wavelength for generating the above-mentioned laser beam LW. The frequency of the fundamental wave is, for example, 1064 nm. The laser oscillator 23 is a laser light source such as a YAG laser, a _CO2 laser, or a fiber laser.

The laser light source 22 is connected to the wavelength conversion unit 24 directly or via an optical fiber cable. The wavelength conversion unit 24 converts the wavelength of the fundamental wave generated by the laser light source 22 to generate a harmonic wave having a higher frequency than the fundamental wave.

The wavelength conversion unit 24 of this embodiment includes a first conversion element 25 and a second conversion element 26. The first conversion element 25 is a wavelength conversion element that generates a second harmonic (SHG) having a frequency higher than that of the fundamental wave. The first conversion element 25 generates laser light including the fundamental wave and the second harmonic. The first conversion element 25 is a nonlinear optical crystal, for example, LBO (LiB ₃ O ₃ ). Note that the first conversion element 25 may use other nonlinear optical crystals. The wavelength of the second harmonic is, for example, 532 nm.

The second conversion element 26 is a wavelength conversion element that generates a third harmonic (THG) having a frequency higher than the first harmonic. The second conversion element 26 generates a laser beam including a fundamental wave, a second harmonic, and a third harmonic. The second conversion element 26 is a nonlinear optical crystal, for example, LBO (LiB ₃ O ₃ ). Note that the second conversion element 26 may use other nonlinear optical crystals. The wavelength of the third harmonic is, for example, 355 nm.

The filter 27 transmits laser light of a predetermined wavelength. The filter 27 in this embodiment is configured to transmit laser light of a wavelength band including the wavelength of the third harmonic.
With this configuration, the laser light source 22 emits laser light LW of the above-mentioned predetermined wavelength (for example, 355 nm).

The laser head 12 includes a dust collecting unit 31 , a beam expander 32 , a focus adjusting unit 33 , a scanning unit 34 , and a protective glass 35 .
The dust collecting section 31 has a member to be adhered 31a and a position changing section 31b. The member to be adhered 31a transmits the laser light LW. The member to be adhered 31a has, for example, a glass substrate and an anti-reflection film (AR coating) on the surface of the glass substrate. The glass substrate is preferably made of a material that absorbs the laser light LW less. The glass substrate is made of, for example, fused quartz. The anti-reflection film reduces the amount of reflection (reflectance) of the laser light on the glass substrate and improves the amount of transmission (transmittance) of the laser light on the glass substrate. The anti-reflection film is a multi-layer film made of multiple thin films of materials such as oxides, metals, and rare earths. The anti-reflection film is made of, for example, thin films of aluminum oxide (Al ₂ O ₃ ), tantalum pentoxide (Ta ₂ O ₅ ), magnesium fluoride (MgF ₂ ), and the like. In the anti-reflection film of this embodiment, the outermost layer film contains titanium oxide (TiO ₂ ).

The adherend member 31a is preferably disposed in a location inside the laser head 12 where the intensity of the laser light LW is high. The laser light LW is emitted from the laser emission unit 11 as, for example, parallel light. The intensity of this laser light LW decreases along the path it travels. Therefore, the emission end of the laser emission unit 11, i.e., the incident end of the laser light in the laser head 12, can be said to be a location with high intensity.

The beam expander 32, focus adjustment unit 33, and scanning unit 34 described below are optical components in the laser processing device 101 that propagate the laser light LW emitted from the laser emission unit 11 toward the workpiece W. In contrast, the adherend member 31a can be said to be an optical component in the laser processing device 101 that does not contribute to the propagation of the laser light LW.

The position changer 31b includes, for example, an actuator such as a motor. The position changer 31b is configured to change the location on the adherend member 31a where the laser light LW passes (enters). For example, the position changer 31b changes the location on the adherend member 31a where the laser light LW is irradiated by rotating the adherend member 31a or moving the adherend member 31a in a predetermined direction.

The beam expander 32 includes a plurality of lenses. For example, the beam expander 32 has a concave lens on the incident side and a convex lens on the exit side. The beam expander 32 expands the beam diameter of the incident laser light LW by a predetermined magnification and emits the laser light LW . The beam expander 32 may have a convex lens on both the incident side and the exit side.

The focus adjustment unit 33 has a lens unit 33a and a drive unit 33b. The lens unit 33a includes at least two lenses. The lenses are arranged along the passage path of the laser light LW. At least one lens included in the lens unit 33a is supported movably along the passage path by a support member (not shown), such as a linear slider. The drive unit 33b moves the movably supported lens along the passage path under the control of the control unit 21. In this way, the focus adjustment unit 33 adjusts the focal position of the laser light LW.

The scanning unit 34 includes galvanometer mirrors 34X and 34Y and a driver 34b. The galvanometer mirrors 34X and 34Y reflect the laser light LW. The driver 34b rotates the galvanometer mirrors 34X and 34Y. The driver 34b is, for example, a motor, and is controlled by the control unit 21. The galvanometer mirrors 34X and 34Y and the driver 34b are configured to scan the laser light LW in two-dimensional directions. For example, the galvanometer mirror 34X and the driver 34b scan the laser light LW in the X-axis direction, and the galvanometer mirror 34Y and the driver 34b scan the laser light LW in the Y-axis direction.

The protective glass 35 is attached to the laser head 12. The laser head 12 has an opening through which the laser light LW passes. The protective glass 35 closes the opening. The protective glass 35 prevents dust and objects generated by processing (e.g., organic matter) from entering the interior of the laser head 12 through the opening of the laser head 12.

(Action)
Next, the operation of the laser processing apparatus 101 of this embodiment will be described.
The laser processing device 101 has a laser emission unit 11 and a laser head 12. The laser emission unit 11 has a laser oscillator 23 that generates a fundamental wave, and a wavelength conversion section 24 that converts the wavelength of the fundamental wave to generate a harmonic wave having a higher frequency than the fundamental wave. The wavelength of the laser light LW output from the wavelength conversion section 24 is, for example, 355 nm. Such laser light LW is called a UV laser light. The workpiece W can be processed by this laser light LW.

The laser head 12 has a beam expander 32, a focus adjustment unit 33, and a scanning unit 34 as optical members for irradiating the laser light LW onto the workpiece W. The laser head 12 also has a member to be adhered 31a as an optical member that is not involved in the propagation of the laser light LW. This member to be adhered 31a is placed in a location where the intensity of the laser light LW is high.

The gas inside the laser head 12 contains impurities. The impurities include minute liquid and solid particles. The impurities have the property of moving toward the laser light or the optical member irradiated with the laser light due to the migration effect. The migration effect has a stronger migration force as the intensity of the laser light increases. Therefore, the impurities inside the laser head 12 move toward the part of the adherent member 31a through which the laser light LW passes, and adhere to the adherent member 31a. This makes it possible to suppress the adhesion of impurities to other optical members, that is, the beam expander 32, the lenses constituting the focus adjustment unit 33, the galvanometer mirrors 34X and 34Y, and other optical members for guiding the laser light LW to the workpiece W. This makes it possible to suppress a decrease in the intensity of the laser light LW emitted from the laser head 12 toward the laser processing device 101.

The member 31a to be adhered to has a glass plate and an anti-reflection film formed on the surface of the glass plate. Therefore, impurities adhere to the entrance surface of the laser light LW to the member 31a to be adhered to and the exit surface of the laser light LW. This allows impurities inside the laser head 12 to be adhered to efficiently.

The dust collecting unit 31 has a substrate 31a and a position changing unit 31b. The position changing unit 31b is configured to change the position on the substrate 31a where the laser light LW is irradiated. The control unit 21 controls the position changing unit 31b, for example, depending on the operating time of the laser processing device 101, to change the irradiation position of the laser light LW on the substrate 31a. In other words, by changing the part where the impurities adhere, the impurities can be made to adhere to the substrate 31a for a long period of time, that is, the adhesion of impurities to other optical members can be suppressed for a long period of time. This allows the operation of the laser processing device 101 to be extended.

The laser processing device 101 also requires maintenance such as cleaning and replacing the built-in optical components. In this embodiment, the adhesion of impurities to the optical components is reduced, so the number of maintenance operations can be reduced and the maintenance intervals can be extended, i.e., the operating time can be extended.

The member 31a to be adhered to in this embodiment includes a glass substrate and an anti-reflection film on the surface of the glass substrate. In the anti-reflection film of this embodiment, the outermost layer of the film contains titanium oxide (TiO ₂ ). In addition to a general (normal) dust-collecting effect, this outermost layer of the film exhibits a photocatalytic effect when exposed to the irradiated laser light LW (UV laser light). This photocatalytic effect decomposes organic matter adhered to the member 31a to be adhered to. This makes it possible to reduce the impurities adhered to the member 31a to be adhered to. This makes it possible to reduce the number of maintenance operations and lengthen the maintenance interval, i.e., to lengthen the operating time.

As described above, according to this embodiment, the following effects are achieved.
(1-1) The laser processing device 101 has a laser emission unit 11 and a laser head 12. The laser emission unit 11 has a laser oscillator 23 that generates a fundamental wave, and a wavelength conversion unit 24 that generates a harmonic wave having a higher frequency than the fundamental wave. The wavelength of the laser light LW output from the wavelength conversion unit 24 is, for example, 355 nm. Such laser light LW is called UV laser light. The workpiece W can be processed by this laser light LW.

(1-2) The laser head 12 has a beam expander 32, a focus adjustment unit 33, and a scanning unit 34 as optical members for irradiating the laser light LW to the workpiece W. The laser head 12 also has a member to be adhered 31a as an optical member that is not involved in the propagation of the laser light LW. This member to be adhered 31a is disposed in a location where the intensity of the laser light LW is high. Impurities inside the laser head 12 move toward the part of the member to be adhered 31a through which the laser light LW passes, and adhere to the member to be adhered 31a. This makes it possible to suppress adhesion of impurities to other optical members, that is, the beam expander 32, the lenses constituting the focus adjustment unit 33, and the galvanometer mirrors 34X and 34Y. This makes it possible to suppress a decrease in the intensity of the laser light LW emitted from the laser head 12 toward the laser processing device 101.

(1-3) The member 31a to be adhered to has a glass plate and an anti-reflection film formed on the surface of the glass plate. Therefore, impurities adhere to the entrance surface of the laser light LW to the member 31a to be adhered to and the exit surface of the laser light LW. This allows impurities inside the laser head 12 to be adhered to efficiently.

(1-4) The dust collecting unit 31 has a substrate 31a and a position changing unit 31b. The position changing unit 31b is configured to change the position on the substrate 31a where the laser light LW is irradiated. The control unit 21 controls the position changing unit 31b based on, for example, the operating time of the laser processing device 101 to change the irradiation position of the laser light LW on the substrate 31a. In other words, by changing the part where the impurities adhere, the impurities can be made to adhere to the substrate 31a for a long period of time, that is, the adhesion of impurities to other optical members can be suppressed for a long period of time. This allows the operation of the laser processing device 101 to be extended.

(1-5) The laser processing device 101 requires maintenance such as cleaning and replacing the built-in optical components. In this embodiment, the adhesion of impurities to the optical components is reduced, so the number of maintenance operations can be reduced and the maintenance intervals can be extended, i.e., the operating time can be extended.

(1-6) The member 31a to be adhered to includes a glass substrate and an anti-reflective coating on the surface of the glass substrate. In the anti-reflective coating of this embodiment, the outermost layer of the film contains titanium oxide (TiO ₂ ). This outermost layer exhibits a photocatalytic effect when exposed to the irradiated laser light LW (UV laser light). This photocatalytic effect decomposes organic matter adhered to the member 31a to be adhered to. This makes it possible to reduce the number of times maintenance is required and to lengthen the maintenance interval, i.e., to lengthen the operating time.

Second Embodiment
The second embodiment will be described below.
In this embodiment, the same components as those in the above embodiment are denoted by the same reference numerals and the description thereof will be omitted.

As shown in FIG. 2, the laser processing apparatus 102 of this embodiment includes a beam expander 41. The beam expander 41 of this embodiment has a first lens 41a and a second lens 41b. The first lens 41a and the second lens 41b are convex lenses. In other words, the beam expander 41 of this embodiment is a Keplerian beam expander. This beam expander 41 focuses the laser light LW between the first lens 41a on the incident side and the second lens 41b on the exit side. In other words, the laser processing apparatus 102 of this embodiment has a focal position of the laser light LW inside the beam expander 41.

The adhered member 31a of the dust collection unit 31 is disposed inside the beam expander 41. More specifically, the adhered member 31a is disposed between the first lens 41a on the incident side and the second lens 41b on the exit side. The adhered member 31a is disposed at or near the focal position of the laser light LW between the first lens 41a and the second lens 41b.

The optimal position on the laser light path for placing the adherend member 31a may vary depending on the type of impurity, such as the "focal position" being preferable or a "position slightly shifted from the focal position" being preferable depending on the impurity. Therefore, "the focal position or vicinity" refers to the location where the light intensity is high, and includes not only the "focal position" or "almost the focal position (a position that can be considered to be the focal position)," but also "between the focal position of the laser light focused by the focusing lens and the focusing lens" and "the position on the opposite side of the focusing lens from the focal position."

By concentrating the laser light LW, the intensity of the laser light LW at the portion of the surface of the adherend member 31a where the laser light LW is irradiated becomes higher than the intensity of the laser light LW before being concentrated. Therefore, by using the beam expander 41 of this embodiment, the intensity of the laser light LW irradiated to the adherend member 31a can be increased. This makes it easier for impurities to adhere to the adherend member 31a. In other words, the adhesion of impurities to other optical members can be reduced.

As described above, according to the present embodiment, in addition to the effects of the first embodiment, the following effects are achieved.
(2-1) The beam expander 41 using the first lens 41a and the second lens 41b, which are convex lenses, can increase the intensity of the laser light LW on the substrate 31a disposed between the first lens 41a and the second lens 41b. This makes it easier for impurities to adhere to the substrate 31a, and can further reduce the adhesion of impurities to other optical members.

Third Embodiment
The third embodiment will now be described.
In this embodiment, the same components as those in the above embodiment are denoted by the same reference numerals and the description thereof will be omitted.

As shown in FIG. 3, the laser processing apparatus 103 of this embodiment includes a laser head 12 equipped with a beam splitter 42 , a lens 43 , and a damper 44 .
The beam splitter 42 is disposed between the laser light source 22 and the beam expander 32. The beam splitter 42 branches a part of the laser light LW emitted from the laser light source 22. The dumper 44 absorbs the branched laser light LW.

The lens 43 is disposed between the beam splitter 42 and the damper 44. The lens 43 is a convex lens, and is a focusing lens that focuses the laser light LW between the lens 43 and the damper 44. In other words, the laser processing device 103 of this embodiment has a focal point of the laser light LW between the lens 43 and the damper 44.

The adhered member 31a of the dust collection unit 31 is disposed between the lens 43 and the damper 44. The adhered member 31a is disposed at or near the focal position of the laser light LW between the lens 43 and the damper 44.

By concentrating the laser light LW, the intensity of the laser light LW at the portion of the surface of the adherend member 31a where the laser light LW is irradiated becomes higher than the intensity of the laser light LW before being concentrated. Therefore, by using the lens 43 of this embodiment, the intensity of the laser light LW irradiated to the adherend member 31a can be increased. This makes it easier for impurities to adhere to the adherend member 31a. In other words, the adhesion of impurities to other optical members can be reduced.

In the laser processing device 103 of this embodiment, the adherend member 31a is placed in the path of the laser light LW split by the beam splitter 42. Therefore, the adherend member 31a can be placed at a position different from the path of the laser light LW that processes the workpiece W. In other words, the adherend member 31a can be placed at any position inside the laser head 12. Therefore, by placing the adherend member 31a inside the laser head 12 near a location where impurities are generated (for example, a location where adhesive is applied), the adhesion of impurities to other optical components can be further reduced.

As described above, according to the present embodiment, in addition to the effects of the first embodiment, the following effects are achieved.
(3-1) The laser processing device 103 includes a beam splitter 42 that branches off a portion of the laser light LW emitted from the laser light source 22. The damper 44 absorbs the branched laser light. The lens 43 is disposed between the beam splitter 42 and the damper 44, and focuses the branched laser light. This makes it possible to easily form a location in the laser head 12 where the intensity of the laser light LW is high.

(3-2) The adherend member 31a of the dust collection unit 31 is disposed between the lens 43 and the damper 44. By concentrating the laser light LW, the intensity of the laser light LW at the portion of the surface of the adherend member 31a where the laser light LW is irradiated becomes higher than the intensity of the laser light LW before being concentrated. Therefore, by using the lens 43 of this embodiment, the intensity of the laser light LW irradiated to the adherend member 31a can be increased. This makes it easier for impurities to adhere to the adherend member 31a. In other words, the adhesion of impurities to other optical members can be reduced.

(3-3) The adhered member 31a is disposed in the path of the laser light LW split by the beam splitter 42. This allows the adhered member 31a to be disposed at any position inside the laser head 12. Therefore, by disposing the adhered member 31a inside the laser head 12 near a location where impurities are generated (for example, a location where adhesive is applied), it is possible to further reduce the adhesion of impurities to other optical components.

Fourth Embodiment
The fourth embodiment will be described below.
In this embodiment, the same components as those in the above embodiment are denoted by the same reference numerals and the description thereof will be omitted.

As shown in FIG. 4, the laser processing device 104 of this embodiment has a lens 28 in the laser light source 22. The lens 28 is a convex lens, and focuses the laser light LW that has passed through the filter 27. The laser light LW is focused between the laser light source 22 and the beam expander 32.

The adhered member 31a of the dust collection unit 31 is disposed between the laser light source 22 and the beam expander 32. The adhered member 31a is disposed at or near the focal position of the laser light LW between the laser light source 22 and the beam expander 32.

By concentrating the laser light LW, the intensity of the laser light LW at the portion of the surface of the adherend member 31a where the laser light LW is irradiated becomes higher than the intensity of the laser light LW before being concentrated. Therefore, by using the lens 28 of this embodiment, the intensity of the laser light LW irradiated to the adherend member 31a can be increased. This makes it easier for impurities to adhere to the adherend member 31a. In other words, the adhesion of impurities to other optical members can be reduced.

As described above, according to the present embodiment, in addition to the effects of the first embodiment, the following effects are achieved.
(4-1) The laser processing device 104 has a lens 28 in the laser light source 22. The lens 28 is a convex lens, and focuses the laser light LW that has passed through the filter 27. The laser light LW is focused between the laser light source 22 and the beam expander 32. This makes it possible to easily form a location in the laser head 12 where the intensity of the laser light LW is high.

(4-2) The adhered member 31a of the dust collecting unit 31 is disposed between the laser light source 22 and the beam expander 32. The adhered member 31a is disposed at or near the focal position of the laser light LW between the laser light source 22 and the beam expander 32. By concentrating the laser light LW, the intensity of the laser light LW at the portion on the surface of the adhered member 31a where the laser light LW is irradiated becomes higher than the intensity of the laser light LW before being concentrated. Therefore, by using the lens 28 of this embodiment, the intensity of the laser light LW irradiated to the adhered member 31a can be made higher. This makes it easier for impurities to adhere to the adhered member 31a. In other words, the adhesion of impurities to other optical members can be reduced.

Fifth Embodiment
The fifth embodiment will be described below.
In this embodiment, the same components as those in the above embodiment are denoted by the same reference numerals and the description thereof will be omitted.

As shown in FIG. 5, the laser light source 22 of the laser processing device 105 of this embodiment has a laser oscillator 23 and a wavelength conversion unit 24, and does not have the filter 27 shown in FIG. 1, etc. With this configuration, the laser light source 22 emits laser light LA that includes a fundamental wave and harmonics (second harmonic and third harmonic).

The laser head 12 in the above embodiment is equipped with a filter 45. The filter 45 is disposed between the laser light source 22 and the beam expander 32. The adherend member 31a of the dust collection unit 31 is disposed between the laser light source 22 and the filter 45. Therefore, the adherend member 31a transmits the laser light LA, which includes the fundamental wave and the harmonic. The filter 45 transmits the laser light LW, which includes the second harmonic of the laser light LA.

In this laser processing device 105, the laser light LA that passes through the workpiece 31a includes a fundamental wave and harmonics (second harmonic and third harmonic). Therefore, in this embodiment, in addition to the third harmonic, impurities (e.g., organic compounds) due to the fundamental wave and second harmonic can be attached to the workpiece 31a.

As described above, according to the present embodiment, in addition to the effects of the first embodiment, the following effects are achieved.
(5-1) The laser light source 22 of the laser processing device 105 emits laser light LA including a fundamental wave and harmonics (second and third harmonics). The laser light LA including a fundamental wave and harmonics (second and third harmonics) is transmitted through the adherend member 31a. In this embodiment, impurities (e.g., organic compounds) due to the fundamental wave and the second harmonic in addition to the third harmonic can be adhered to the adherend member 31a. This can reduce the adhesion of impurities to other optical members.

Sixth Embodiment
The sixth embodiment will be described below.
In this embodiment, the same components as those in the above embodiment are denoted by the same reference numerals and the description thereof will be omitted.

As shown in FIG. 6, the laser light source 22 of the laser processing device 106 of this embodiment has a laser oscillator 23, a wavelength conversion unit 24, and a lens 28, and does not have the filter 27 shown in FIG. 1, etc. The lens 28 is a convex lens, and focuses the laser light LA generated by the wavelength conversion unit 24. The laser light LA is focused between the laser light source 22 and the beam expander 32.

The laser head 12 in the above embodiment is equipped with a filter 45. The filter 45 is disposed between the laser light source 22 and the beam expander 32. The adherent member 31a of the dust collection unit 31 is disposed between the laser light source 22 and the filter 45. The adherent member 31a is disposed at or near the focal position of the laser light LA between the laser light source 22 and the beam expander 32.

By concentrating the laser light LA, the intensity of the laser light LA at the portion of the surface of the workpiece 31a where the laser light LA is irradiated becomes higher than the intensity of the laser light LA before being concentrated. Therefore, by using the lens 28 of this embodiment, the intensity of the laser light LW irradiated to the workpiece 31a can be increased. This makes it easier for impurities to adhere to the workpiece 31a. In other words, the adhesion of impurities to other optical members can be reduced.

As described above, according to the present embodiment, in addition to the effects of the first and fifth embodiments, the following effects are achieved.
(6-1) The laser processing device 106 has a lens 28 in the laser light source 22. The lens 28 is a convex lens, and focuses the laser light LA. The laser light LA is focused between the laser light source 22 and the beam expander 32. This makes it possible to easily form a location in the laser head 12 where the intensity of the laser light LA is high.

(6-2) The adhered member 31a of the dust collection unit 31 is disposed between the laser light source 22 and the filter 45. The adhered member 31a is disposed between the laser light source 22 and the beam expander 32 at or near the focal position of the laser light LA. By concentrating the laser light LA, the intensity of the laser light LA at the portion of the surface of the adhered member 31a where the laser light LA is irradiated becomes higher than the intensity of the laser light LA before being concentrated. Therefore, by using the lens 28 of this embodiment, the intensity of the laser light LA irradiated to the adhered member 31a can be increased. This makes it easier for impurities to adhere to the adhered member 31a. In other words, the adhesion of impurities to other optical members can be reduced.

(6-3) The laser light source 22 of the laser processing device 106 emits laser light LA including a fundamental wave and harmonics (second and third harmonics). The adherend member 31a transmits the laser light LA including a fundamental wave and harmonics (second and third harmonics). In this embodiment, in addition to the third harmonic, impurities (e.g., organic compounds) due to the fundamental wave and the second harmonic can be adhered to the adherend member 31a. This can reduce the adhesion of impurities to other optical members.

Seventh Embodiment
The seventh embodiment will be described below.
In this embodiment, the same components as those in the above embodiment are denoted by the same reference numerals and the description thereof will be omitted.

As shown in FIG. 7, a laser processing apparatus 107 of this embodiment includes a laser head 12 equipped with a mirror (reflection member) 46 , a drive unit 47 , a lens 43 , and a damper 44 .
The mirror 46 is disposed between the laser light source 22 and the beam expander 32. The mirror 46 is supported so as to be switchably disposed between a first position (position indicated by a two-dot chain line in FIG. 7) where the laser light LW emitted from the laser light source 22 irradiates the mirror 46, and a second position (position indicated by a solid line in FIG. 7) where the laser light LW is not irradiated. The drive unit 47 is an actuator for switchably disposing the mirror 46 between the first position and the second position. The control unit 21 controls the drive unit 47 to dispose the mirror 46 at the first position or the second position. The control unit 21 and the drive unit 47 constitute a position switching unit.

The mirror 46 disposed at the first position reflects the laser light LW. The damper 44 absorbs the laser light LW reflected by the mirror 46 (indicated by a two-dot chain line).
The lens 43 is disposed between the mirror 46 and the damper 44. The lens 43 is a convex lens, and focuses the laser light LW between the lens 43 and the damper 44. That is, the laser processing apparatus 107 of the present embodiment has a focal point of the laser light LW between the lens 43 and the damper 44.

The adhered member 31a of the dust collection unit 31 is disposed between the lens 43 and the damper 44. The adhered member 31a is disposed at or near the focal position of the laser light LW between the lens 43 and the damper 44.

By concentrating the laser light LW, the intensity of the laser light LW at the portion of the surface of the adherend member 31a where the laser light LW is irradiated becomes higher than the intensity of the laser light LW before being concentrated. Therefore, by using the lens 43 of this embodiment, the intensity of the laser light LW irradiated to the adherend member 31a can be increased. This makes it easier for impurities to adhere to the adherend member 31a. In other words, the adhesion of impurities to other optical members can be reduced.

In the laser processing device 107 of this embodiment, the adhered member 31a is placed in the path of the laser light LW reflected by the mirror 46. Therefore, the adhered member 31a can be placed at a position different from the path of the laser light LW that processes the workpiece W. In other words, the adhered member 31a can be placed at any position inside the laser head 12. Therefore, by placing the adhered member 31a inside the laser head 12 near a location where impurities are generated (for example, a location where adhesive is applied), the adhesion of impurities to other optical members can be further reduced.

As described above, according to the present embodiment, in addition to the effects of the first embodiment, the following effects are achieved.
(7-1) The laser processing device 107 includes a mirror 46 that reflects the laser light LW emitted from the laser light source 22. The damper 44 absorbs the laser light reflected by the mirror 46. The lens 43 is disposed between the mirror 46 and the damper 44 and collects the laser light LW. The adhered member 31a of the dust collection unit 31 is disposed between the lens 43 and the damper 44.

By concentrating the laser light LW, the intensity of the laser light LW at the portion of the surface of the adherend member 31a where the laser light LW is irradiated becomes higher than the intensity of the laser light LW before being concentrated. Therefore, by using the lens 43 of this embodiment, the intensity of the laser light LW irradiated to the adherend member 31a can be increased. This makes it easier for impurities to adhere to the adherend member 31a. In other words, the adhesion of impurities to other optical members can be reduced.

(7-2) The adhered member 31a is disposed in the path of the laser light LW reflected by the mirror 46. This allows the adhered member 31a to be disposed at any position inside the laser head 12. Therefore, by disposing the adhered member 31a inside the laser head 12 near a location where impurities are generated (for example, a location where adhesive is applied), it is possible to further reduce the adhesion of impurities to other optical components.

(7-3) The adherend member 31a is disposed in the path of the laser light LW reflected by the mirror 46 disposed in the first position. This allows the adherend member 31a to be disposed at any position inside the laser head 12. Therefore, by disposing the adherend member 31a inside the laser head 12 near a location where impurities are generated (for example, a location where adhesive is applied), it is possible to further reduce the adhesion of impurities to other optical components.

(7-4) The mirror 46 is supported so that it can be switched between a first position (position shown by a two-dot chain line in FIG. 7) where the laser light LW emitted from the laser light source 22 is irradiated onto the mirror 46, and a second position (position shown by a solid line in FIG. 7) where the laser light LW is not irradiated. Therefore, by switching the mirror 46 to the second position where the laser light LW is not irradiated, the laser light LW generated by the laser light source 22 can be irradiated onto the workpiece W without branching, allowing efficient processing.

Eighth embodiment
The eighth embodiment will now be described.
In this embodiment, the same components as those in the above embodiment are denoted by the same reference numerals and the description thereof will be omitted.

As shown in FIG. 8, the laser processing apparatus 108 of this embodiment includes a laser head 12 equipped with a wave plate 48, a drive unit 49, a polarizing beam splitter 50, a lens 43, and a damper 44.
The wave plate 48 is a half-wave plate that rotates the polarization direction of linearly polarized light. A driving unit 49 rotates the wave plate 48. The polarizing beam splitter 50 is disposed between the laser light source 22 and the beam expander 32. The polarizing beam splitter 50 is an optical member that transmits light in a first polarization direction and reflects light in a second polarization direction orthogonal to the first polarization direction. By combining the wave plate 48 and the polarizing beam splitter 50, the laser light LW emitted from the laser light source 22 can be effectively utilized.

By rotating the wavelength plate 48 to match the polarization direction of the laser light LW with the first polarization direction of the polarizing beam splitter 50, the laser light LW emitted from the laser source 22 passes through the polarizing beam splitter 50. The workpiece W can be processed by this transmitted laser light LW.

By rotating the wave plate 48 to match the polarization direction of the laser light LW with the second polarization direction of the polarizing beam splitter 50, the laser light emitted from the laser source 22 is reflected by the polarizing beam splitter 50. The damper 44 absorbs the laser light LW (shown by the two-dot chain line) reflected by the polarizing beam splitter 50.

The lens 43 is disposed between the polarizing beam splitter 50 and the damper 44. The lens 43 is a convex lens, and focuses the laser light LW between the lens 43 and the damper 44. In other words, the laser processing device 108 of this embodiment has a focal point of the laser light LW between the lens 43 and the damper 44.

The adhered member 31a of the dust collection unit 31 is disposed between the lens 43 and the damper 44. The adhered member 31a is disposed at or near the focal position of the laser light LW between the lens 43 and the damper 44.

By concentrating the laser light LW, the intensity of the laser light LW at the portion of the surface of the adherend member 31a where the laser light LW is irradiated becomes higher than the intensity of the laser light LW before being concentrated. Therefore, by using the lens 43 of this embodiment, the intensity of the laser light LW irradiated to the adherend member 31a can be increased. This makes it easier for impurities to adhere to the adherend member 31a. In other words, the adhesion of impurities to other optical members can be reduced.

In the laser processing device 108 of this embodiment, the adhered member 31a is placed in the path of the laser light LW reflected by the polarizing beam splitter 50. Therefore, the adhered member 31a can be placed at a position different from the path of the laser light LW that processes the workpiece W. In other words, the adhered member 31a can be placed at any position inside the laser head 12. Therefore, by placing the adhered member 31a inside the laser head 12 near a location where impurities are generated (for example, a location where adhesive is applied), the adhesion of impurities to other optical members can be further reduced.

As described above, according to the present embodiment, in addition to the effects of the first embodiment, the following effects are achieved.
(8-1) The laser processing device 108 includes a polarizing beam splitter 50 that splits a portion of the laser light LW emitted from the laser light source 22. The damper 44 absorbs the split laser light. The lens 43 is disposed between the polarizing beam splitter 50 and the damper 44, and focuses the split laser light. This makes it possible to easily form a location in the laser head 12 where the intensity of the laser light LW is high.

(8-2) The adherend member 31a of the dust collection unit 31 is disposed between the lens 43 and the damper 44. By concentrating the laser light LW, the intensity of the laser light LW at the portion of the surface of the adherend member 31a where the laser light LW is irradiated becomes higher than the intensity of the laser light LW before being concentrated. Therefore, by using the lens 43 of this embodiment, the intensity of the laser light LW irradiated to the adherend member 31a can be increased. This makes it easier for impurities to adhere to the adherend member 31a. In other words, the adhesion of impurities to other optical members can be further reduced.

(8-3) The adhered member 31a is disposed in the path of the laser light LW reflected by the polarizing beam splitter 50. This allows the adhered member 31a to be disposed at any position inside the laser head 12. Therefore, by disposing the adhered member 31a inside the laser head 12 near a location where impurities are generated (for example, a location where adhesive is applied), it is possible to further reduce the adhesion of impurities to other optical components.

Ninth embodiment
The ninth embodiment will be described below.
In this embodiment, the same components as those in the above embodiment are denoted by the same reference numerals and the description thereof will be omitted.

As shown in FIG. 9, a laser processing apparatus 109 of this embodiment includes a laser head 12 equipped with a shutter 51 , a drive unit 52 , and a damper 44 .
The shutter 51 is disposed between the focus adjustment unit 33 and the scanning unit 34. The shutter 51 is supported so as to be switchable between a first position (indicated by a two-dot chain line) where the laser light LW is irradiated and a second position (indicated by a solid line) where the laser light is not irradiated. The driving unit 52 is an actuator (e.g., a motor) configured to switch the shutter 51 between the first position and the second position. The shutter 51 is configured to reflect the laser light LW. The laser light reflected by the shutter 51 is referred to as reflected light LR.

The damper 44 absorbs the reflected light LR (shown by a two-dot chain line) reflected by the shutter 51. This reflected light LR is focused between the shutter 51 and the damper 44 by the focus adjustment unit 33.

The adhered member 31a of the dust collection unit 31 is disposed between the shutter 51 and the damper 44. The adhered member 31a is disposed between the shutter 51 and the damper 44 at or near the focal position of the reflected light LR.

By concentrating the reflected light LR, the intensity of the reflected light LR at the portion of the surface of the adherend member 31a where the reflected light LR is irradiated becomes higher than the intensity of the laser light LW before being concentrated. Therefore, by using the focus adjustment unit 33, the intensity of the reflected light LR irradiated to the adherend member 31a can be increased. This makes it easier for impurities to adhere to the adherend member 31a. In other words, the adhesion of impurities to other optical members can be reduced.

In the laser processing device 109 of this embodiment, the adhered member 31a is placed in the path of the reflected light LR reflected by the shutter 51. Therefore, the adhered member 31a can be placed at a position different from the path of the laser light LW that processes the workpiece W. In other words, the adhered member 31a can be placed at any position inside the laser head 12. Therefore, by placing the adhered member 31a inside the laser head 12 near a location where impurities are generated (for example, a location where adhesive is applied), it is possible to further reduce the adhesion of impurities to other optical components.

In addition, in the laser processing device 109 of this embodiment, the adherend member 31a of the dust collection unit 31 is placed at or near the focal position of the reflected light LR adjusted by the focus adjustment unit 33. In other words, the focus adjustment unit 33 is controlled to form the focal point of the reflected light LR at or near the position of the adherend member 31a of the dust collection unit 31. This makes it possible to easily form a location with high intensity of the reflected light LR at any position.

As described above, according to the present embodiment, in addition to the effects of the first embodiment, the following effects are achieved.
(9-1) The laser processing device 109 includes a shutter 51 that reflects the laser light LW emitted from the laser light source 22. The damper 44 absorbs the reflected light LR reflected by the shutter 51. The reflected light LR is focused between the shutter 51 and the damper 44 by the focus adjustment unit 33. The adhered member 31a of the dust collection unit 31 is disposed between the shutter 51 and the damper 44.

By concentrating the reflected light LR, the intensity of the reflected light LR at the portion of the surface of the adherend member 31a where the reflected light LR is irradiated becomes higher than the intensity of the laser light LW before being concentrated. Therefore, by using the beam expander 32 of this embodiment, the intensity of the reflected light LR irradiated to the adherend member 31a can be increased. This makes it easier for impurities to adhere to the adherend member 31a. In other words, the adhesion of impurities to other optical members can be reduced.

(9-2) The adhered member 31a is disposed in the path of the reflected light LR reflected by the shutter 51. This allows the adhered member 31a to be disposed at any position inside the laser head 12. Therefore, by disposing the adhered member 31a inside the laser head 12 near a location where impurities are generated (for example, a location where adhesive is applied), it is possible to further reduce the adhesion of impurities to other optical components.

(9-3) The shutter 51 is supported so that it can be switched between a first position (position shown by a two-dot chain line) where the laser light LW emitted from the laser light source 22 is irradiated onto the shutter 51, and a second position (position shown by a solid line) where the laser light LW is not irradiated. Therefore, by switching the shutter 51 to the second position where the laser light LW is not irradiated, the laser light LW generated by the laser light source 22 can be irradiated onto the workpiece W without branching, allowing efficient processing.

(9-4) In the laser processing device 109, the adherend member 31a of the dust collection unit 31 is placed at or near the focal position of the reflected light LR adjusted by the focus adjustment unit 33. In other words, the focus adjustment unit 33 is controlled to form the focal point of the reflected light LR at or near the position of the adherend member 31a of the dust collection unit 31. This makes it easy to form a location with high intensity of the reflected light LR at any position.

Tenth embodiment
The tenth embodiment will be described below.
In this embodiment, the same components as those in the above embodiment are denoted by the same reference numerals and the description thereof will be omitted.

As shown in FIG. 10 , a laser processing apparatus 110 of the present embodiment is provided with a damper 44 on the laser head 12 .
The laser head 12 of this embodiment is configured to have a detachable reflecting mirror (reflecting plate) 53. The reflecting mirror 53 attached to the laser head 12 reflects the laser light LW toward the galvanometer mirrors 34X and 34Y. The laser light reflected by the reflecting mirror 53 is referred to as reflected light LR. The galvanometer mirrors 34X and 34Y reflect the reflected light LR in a direction other than the focus adjustment unit 33.

The damper 44 absorbs the reflected light LR (indicated by a two-dot chain line) reflected by the reflecting mirror 53 and the galvanometer mirrors 34X and 34Y. The reflected light LR is focused by the focus adjustment unit 33 between the galvanometer mirrors 34X and 34Y and the damper 44 .

The adhered member 31a of the dust collection unit 31 is disposed between the galvanometer mirrors 34X, 34Y and the damper 44. The adhered member 31a is disposed at or near the focal position of the reflected light LR between the galvanometer mirrors 34X, 34Y and the damper 44.

By concentrating the reflected light LR, the intensity of the reflected light LR at the portion of the surface of the adherend member 31a where the reflected light LR is irradiated becomes higher than the intensity of the laser light LW before being concentrated. Therefore, by using the focus adjustment unit 33, the intensity of the reflected light LR irradiated to the adherend member 31a can be increased. This makes it easier for impurities to adhere to the adherend member 31a. In other words, the adhesion of impurities to other optical members can be reduced.

In the laser processing device 110 of this embodiment, the adherend member 31a is placed in the path of the reflected light LR reflected by the reflecting mirror 53 and the galvanometer mirrors 34X and 34Y. Therefore, the adherend member 31a can be placed at a position different from the path of the laser light LW that processes the workpiece W. In other words, the adherend member 31a can be placed at any position inside the laser head 12. Therefore, by placing the adherend member 31a inside the laser head 12 near a location where impurities are generated (for example, a location where adhesive is applied), it is possible to further reduce the adhesion of impurities to other optical components.

In addition, in the laser processing device 110 of this embodiment, the adherend member 31a of the dust collection unit 31 is placed at or near the focal position of the reflected light LR adjusted by the focus adjustment unit 33. In other words, the focus adjustment unit 33 is controlled to form the focal point of the reflected light LR at or near the position of the adherend member 31a of the dust collection unit 31. This makes it possible to easily form a location with high intensity of the reflected light LR at any position.

As described above, according to the present embodiment, in addition to the effects of the first embodiment, the following effects are achieved.
(10-1) The laser processing apparatus 110 includes a reflection mirror 53 that reflects the laser light LW emitted from the laser light source 22. The damper 44 absorbs the reflected light LR reflected by the reflection mirror 53 and the galvanometer mirrors 34X, 34Y. The reflected light LR is focused between the galvanometer mirrors 34X, 34Y and the damper 44 by the focus adjustment unit 33. The adhered member 31a of the dust collection unit 31 is disposed between the galvanometer mirrors 34X, 34Y and the damper 44.

By concentrating the reflected light LR, the intensity of the reflected light LR at the portion of the surface of the adherend member 31a where the reflected light LR is irradiated becomes higher than the intensity of the laser light LW before being concentrated. Therefore, by using the beam expander 32 of this embodiment, the intensity of the reflected light LR irradiated to the adherend member 31a can be increased. This makes it easier for impurities to adhere to the adherend member 31a. In other words, the adhesion of impurities to other optical members can be reduced.

(10-2) The adhered member 31a is disposed in the path of the reflected light LR reflected by the reflecting mirror 53 and the galvanometer mirrors 34X and 34Y. This allows the adhered member 31a to be disposed at any position inside the laser head 12. Therefore, by disposing the adhered member 31a inside the laser head 12 near a location where impurities are generated (for example, a location where adhesive is applied), it is possible to further reduce the adhesion of impurities to other optical components.

(10-3) In the laser processing device 110, the adherend member 31a of the dust collection unit 31 is placed at or near the focal position of the reflected light LR adjusted by the focus adjustment unit 33. In other words, the focus adjustment unit 33 is controlled to form the focal point of the reflected light LR at or near the position of the adherend member 31a of the dust collection unit 31. This makes it easy to form a location with high intensity of the reflected light LR at any position.

[Example of change]
The description of each embodiment is merely an example of a form that the laser processing apparatus according to the present disclosure can take, and is not intended to limit the form. In addition to each embodiment, the present disclosure may take a form in which, for example, the following modified examples of the embodiments are combined, and at least two modified examples that are not mutually contradictory are combined.

The wavelength of the fundamental wave in the laser oscillator 23 is appropriately changed.
The wavelength conversion unit 24 includes three or more conversion elements. For example, the wavelength conversion unit 24 includes a conversion element that generates a fourth harmonic having a frequency higher than the third harmonic. The wavelength of the fourth harmonic is, for example, 266 nm.

The member 31a to be adhered to may be electrically charged. In this case, the electrophoretic effect is also added, making it easier for impurities to adhere to the member 31a to be adhered to, further reducing the adhesion of impurities to other optical members.

- At least one of the temperature of the member 31a to be adhered and the temperature around the member 31a to be adhered may be adjusted. For example, the temperature around the member 31a to be adhered is made higher. Alternatively, the temperature of the member 31a to be adhered is made lower than the temperature around it. This makes it easier for impurities to adhere to the member 31a to be adhered, and further reduces the adhesion of impurities to other optical members.

- A light receiving unit (light receiving element) may be provided instead of the damper 44 to detect the amount of laser light LW that has passed through the adherend member 31a. In this case, the control unit 21 determines the state of the adherend member 31a, i.e., the state of the adhering impurities, based on the amount of light received by the light receiving unit. For example, the control unit 21 may store the amount of light received at the start of operation or immediately after the adherend member 31a is moved as a reference amount of light received, and move the adherend member 31a when the difference between the amount of light received during operation and the reference amount of light received (the amount of decrease in the amount of light received) becomes equal to or greater than a predetermined value.

In addition, when the difference between the amount of light received during operation and the reference amount of light received (the amount of decrease in the amount of light received) becomes equal to or exceeds a predetermined value, the control unit 21 may notify the outside of the laser processing device of this fact. In this case, the member 31a to be attached is moved manually or by instruction to the control unit 21. This makes it possible to reduce the number of maintenance operations and lengthen the maintenance interval, i.e., to extend the operating time.

In the above embodiment, the laser light source 22 including the wavelength conversion unit 24 is used, but the laser processing device may have a laser light source that does not include the wavelength conversion unit 24. For example, the fundamental wave generated by the laser oscillator 23 is supplied to the laser head 12. Here, in order to increase the intensity (laser power) of the laser light at the focal position (processing position, processing focus) on the processing object W, it is better to increase the beam width (more specifically, the beam width of the collimated light) of the laser light incident on the focusing lens (for example, each lens of the focus adjustment unit 33) that focuses the laser light. This is because the larger the beam diameter, the higher the intensity of the laser light. However, there are various requirements for the laser processing device, such as the device itself cannot be made larger than necessary, and the device itself is required to be compact. This limits the size of the beam diameter, and the beam diameter is subject to constraints. For this reason, if a high output (high laser power) is attempted, the power (output) of the laser light source itself will be increased in the part where the beam width cannot be changed. The higher the power (output) of the laser light source, the greater the problem of contamination of optical members such as lenses, that is, adhesion of impurities to the optical members. Therefore, for example, even in a laser processing device for processing a workpiece W using a fundamental wave, by providing a dust collecting unit 31 as in each of the above embodiments, adhesion of impurities to the optical members can be reduced.
(Appendix 1)
A laser light source that emits laser light for processing an object to be processed;
an optical member having a scanning unit that scans the laser light over the object to be processed;
A control unit that controls the laser light source and the scanning unit;
A dust collecting unit including a substrate that transmits the laser light and a position changing unit that changes an irradiation position of the laser light on the substrate;
Equipped with
The attachment member is disposed on a path of the laser light transmitted by the optical member or at a position where the reflected laser light is irradiated.
Laser processing equipment.
(Appendix 2)
2. The laser processing apparatus according to claim 1, wherein the workpiece has a glass plate that transmits the laser light.
(Appendix 3)
3. The laser processing apparatus according to claim 1, wherein the substrate has an anti-reflection film formed on a surface thereof.
(Appendix 4)
4. The laser processing apparatus according to claim 3, wherein the anti-reflection coating is composed of a multi-layer film, and the outermost layer contains titanium oxide.
(Appendix 5)
The laser light source is
A laser oscillator for generating a fundamental wave;
A wavelength conversion unit that generates a harmonic wave having a frequency higher than that of the fundamental wave;
having
emitting the laser light including the harmonic wave;
5. The laser processing apparatus according to claim 1 ,
(Appendix 6)
The wavelength converting portion is
A first conversion element that generates a second harmonic having a frequency higher than that of the fundamental wave;
a second conversion element for generating a third harmonic having a frequency higher than the second harmonic;
Including,
The laser light source emits the laser light including at least the third harmonic.
6. The laser processing apparatus according to claim 5.
(Appendix 7)
a beam expander disposed between the laser light source and the scanning unit to expand a beam diameter of the laser light;
The member to be adhered is disposed between the laser light source and the beam expander.
7. The laser processing apparatus according to claim 1 ,
(Appendix 8)
a beam expander disposed between the laser light source and the scanning unit to expand a beam diameter of the laser light;
the beam expander includes a first lens onto which the laser light is incident, and a second lens onto which the laser light transmitted through the first lens is incident,
The attachment member is disposed between the first lens and the second lens.
7. The laser processing apparatus according to claim 1 ,
(Appendix 9)
a beam splitter that reflects a portion of the laser light;
a focusing lens that focuses a portion of the laser light reflected by the beam splitter;
Equipped with
The workpiece is disposed at a focal position of the laser light focused by the focusing lens.
7. The laser processing apparatus according to claim 1 ,
(Appendix 10)
a beam splitter that reflects a portion of the laser light;
a focusing lens that focuses a portion of the laser light reflected by the beam splitter;
Equipped with
The adherend member is disposed between the focusing lens and a focal position of the laser light focused by the focusing lens, or on the opposite side of the focusing lens with respect to the focal position.
7. The laser processing apparatus according to claim 1 ,
(Appendix 11)
a light receiving unit that receives a portion of the laser light that has passed through the workpiece;
The control unit determines a state of the target member based on an amount of light received by the light receiving unit.
11. The laser processing apparatus according to claim 9 or 10.
(Appendix 12)
A reflecting member that reflects the laser light;
a position switching unit that switches the reflecting member between a first position where the laser light is irradiated and a second position where the laser light is not irradiated;
Equipped with
the substrate is disposed on a path of the laser light reflected by the reflecting member disposed at the first position;
7. The laser processing apparatus according to claim 1 ,
(Appendix 13)
A wave plate;
a polarizing beam splitter onto which the laser light transmitted through the wave plate is incident;
A drive unit that rotates the wave plate;
Equipped with
the driving unit is configured to switch between a first position where the laser light is reflected by the polarizing beam splitter and a second position where the laser light is transmitted through the polarizing beam splitter,
the substrate is disposed on a path of the laser light reflected by the polarizing beam splitter;
7. The laser processing apparatus according to claim 1 ,
(Appendix 14)
a focus adjustment unit disposed between the laser light source and the scanning unit and controlling a focus position of the laser light;
a shutter disposed between the focus adjustment unit and the scanning unit and configured to reflect the laser light;
a damper that absorbs the laser light reflected by the shutter;
Equipped with
The member to be adhered is disposed between the shutter and the damper at a focal position of the laser light adjusted by the focal adjustment unit.
7. The laser processing apparatus according to claim 1 ,
(Appendix 15)
a focus adjustment unit disposed between the laser light source and the scanning unit and adapted to adjust a focus position of the laser light;
a reflector attached to the object side of a protective glass that closes an opening through which the laser light is emitted toward the object, and that reflects the laser light that has passed through the protective glass;
a damper that is disposed on a path of the laser light reflected by the reflector and then reflected by the scanning unit controlled to a predetermined angle by the control unit, and absorbs the laser light;
Equipped with
The attachment member is disposed between the reflector and the damper at a focal position of the laser light adjusted by the focal adjustment unit.
7. The laser processing apparatus according to claim 1 ,
(Appendix 16)
the laser light source is configured to emit the laser light so that the laser light is incident on the optical member after being condensed;
The substrate is disposed at a position where the laser light is focused.
7. The laser processing apparatus according to claim 1 ,

REFERENCE SIGNS LIST 101 to 110 Laser processing device 11 Laser emission unit 12 Laser head 21 Control unit 22 Laser light source 23 Laser oscillator 24 Wavelength conversion unit 25 First conversion element 26 Second conversion element 27 Filter 28 Lens 31 Dust collection unit 31a Adhered member 31b Position change unit 32 Beam expander 33 Focus adjustment unit 33a Lens unit 33b Driving unit 34 Scanning unit 34b Driving unit 34X Galvanometer mirror 34Y Galvanometer mirror 35 Protective glass 41 Beam expander 41a First lens 41b Second lens 42 Beam splitter 43 Lens 44 Damper 45 Filter 46 Mirror 47 Driving unit 48 Wave plate 49 Driving unit 50 Polarizing beam splitter 51 Shutter 52 Driving section 53 Reflecting mirror LA Laser light LR Reflected light LW Laser light W Workpiece

Claims (16)

a laser emission unit having a built-in laser light source that emits laser light for processing an object to be processed;
a laser head having an optical member built therein for guiding the laser light to the workpiece;
A control unit that controls driving of the laser light source and the laser head;
A laser processing apparatus comprising:
the optical member has a scanning unit that scans the laser light over the object to be processed,
The laser head includes:
a dust collecting unit having a substrate that transmits the laser light and a position changing unit that changes the irradiation position of the laser light on the substrate;
The adherend member is disposed inside the laser head on a path of the laser light transmitted by the optical member or at a position where the reflected laser light is irradiated.
Laser processing equipment. The laser processing device according to claim 1, wherein the workpiece has a glass plate that transmits the laser light. The laser processing device according to claim 1 or 2, wherein the workpiece has an anti-reflection film formed on its surface. The laser processing device according to claim 3, wherein the anti-reflection film is composed of a multi-layer film, and the outermost layer contains titanium oxide. The laser light source is
A laser oscillator for generating a fundamental wave;
A wavelength conversion unit that generates a harmonic wave having a frequency higher than that of the fundamental wave;
having
emitting the laser light including the harmonic wave;
2. The laser processing apparatus according to claim 1 . The wavelength converting portion is
A first conversion element that generates a second harmonic having a frequency higher than that of the fundamental wave;
a second conversion element for generating a third harmonic having a frequency higher than the second harmonic;
Including,
The laser light source emits the laser light including at least the third harmonic.
The laser processing apparatus according to claim 5. a beam expander disposed between the laser light source and the scanning unit to expand a beam diameter of the laser light;
The member to be adhered is disposed between the laser light source and the beam expander.
2. The laser processing apparatus according to claim 1 . a beam expander disposed between the laser light source and the scanning unit to expand a beam diameter of the laser light;
the beam expander includes a first lens onto which the laser light is incident, and a second lens onto which the laser light transmitted through the first lens is incident,
The attachment member is disposed between the first lens and the second lens.
The laser processing device according to claim 1 . a beam splitter that reflects a portion of the laser light;
a focusing lens that focuses a portion of the laser light reflected by the beam splitter;
Equipped with
The workpiece is disposed at a focal position of the laser light focused by the focusing lens.
2. The laser processing apparatus according to claim 1 . a beam splitter that reflects a portion of the laser light;
a focusing lens that focuses a portion of the laser light reflected by the beam splitter;
Equipped with
The adherend is disposed between the focusing lens and a focal position of the laser light focused by the focusing lens, or on the opposite side of the focusing lens with respect to the focal position.
2. The laser processing apparatus according to claim 1 . a light receiving unit that receives a portion of the laser light that has passed through the workpiece;
The control unit determines a state of the target member based on an amount of light received by the light receiving unit.
The laser processing apparatus according to claim 9 or 10. A reflecting member that reflects the laser light;
a position switching unit that switches the reflecting member between a first position where the laser light is irradiated and a second position where the laser light is not irradiated;
Equipped with
the target member is disposed on a path of the laser light reflected by the reflecting member disposed at the first position;
2. The laser processing apparatus according to claim 1 . A wave plate;
a polarizing beam splitter onto which the laser light transmitted through the wave plate is incident;
A drive unit that rotates the wave plate;
Equipped with
the driving unit is configured to switch between a first position where the laser light is reflected by the polarizing beam splitter and a second position where the laser light is transmitted through the polarizing beam splitter,
The member to be attached is disposed on a path of the laser light reflected by the polarizing beam splitter.
2. The laser processing apparatus according to claim 1 . a focus adjustment unit disposed between the laser light source and the scanning unit and controlling a focus position of the laser light;
a shutter disposed between the focus adjustment unit and the scanning unit and configured to reflect the laser light;
a damper that absorbs the laser light reflected by the shutter;
Equipped with
The member to be adhered is disposed between the shutter and the damper at a focal position of the laser light adjusted by the focal adjustment unit.
2. The laser processing apparatus according to claim 1 . a focus adjustment unit disposed between the laser light source and the scanning unit and adapted to adjust a focus position of the laser light;
a reflector attached to the object side of a protective glass that closes an opening through which the laser light is emitted toward the object, and that reflects the laser light that has passed through the protective glass;
a damper that is disposed on a path of the laser light reflected by the reflector and then reflected by the scanning unit controlled to a predetermined angle by the control unit, and absorbs the laser light;
Equipped with
The attachment member is disposed between the reflector and the damper at a focal position of the laser light adjusted by the focal adjustment unit.
The laser processing device according to claim 1 . the laser light source is configured to emit the laser light so that the laser light is incident on the optical member after being condensed;
The substrate is disposed at a position where the laser light is focused.
The laser processing device according to claim 1 .