JP7601043B2 - Photosensitive resin composition - Google Patents

Description

The present invention relates to a photosensitive resin composition. It also relates to a photosensitive film, a semiconductor package substrate, a semiconductor device, and a method for manufacturing a semiconductor package substrate, which are obtained using the photosensitive resin composition.

Conventionally, polyimide resins, which have excellent heat resistance and insulating properties, have been used for insulating layers of semiconductor devices. In addition, since polyimide resins have low solubility in solvents, they are used in photosensitive resin compositions in the form of polyimide precursors, and after forming insulating layers, the polyimide precursors are cyclized to form insulating layers (see, for example, Patent Document 1).

JP 2003-084435 A

In recent years, with the increasing speed and capacity of communication devices, photosensitive resin compositions used in semiconductor package substrates for communication devices are also required to have excellent dielectric properties, such as low dielectric constant and dielectric loss tangent of the cured product, as well as excellent resolution.

The present invention has been made in consideration of the above problems, and aims to provide a photosensitive resin composition that has excellent limiting resolution and dielectric properties of the cured product, and a photosensitive film, a semiconductor package substrate, a semiconductor device, and a method for manufacturing a semiconductor package substrate, which are obtained using the photosensitive resin composition.

In addition, when forming via holes by exposing and developing a photosensitive resin composition, it is not easy to control the shape of the via holes. For example, in the case of a negative photosensitive resin composition, if the radical reaction due to exposure is insufficient or excessive, the shape of the via holes may deteriorate.

The present invention has been made in consideration of the above problems, and aims to provide a photosensitive resin composition capable of producing a cured product having good limiting resolution and via hole shape and excellent dielectric properties, and a photosensitive film, a semiconductor package substrate, a semiconductor device, and a method for producing a semiconductor package substrate, which are obtained using the photosensitive resin composition.

As a result of intensive research, the inventors discovered that the above object can be achieved by incorporating a specific polyimide precursor, a crosslinking agent, and a photoradical generator into a photosensitive resin composition, and thus completed the present invention.

（式中、Ｒ^１ｄ、Ｒ^２ｄ、及びＲ^３ｄは、それぞれ独立に水素原子又は炭素数１～３の炭化水素基を表す。＊は結合手を表す。）
［４］ （１Ｄ）成分が、下記式（Ｄ－２）で表される、［２］又は［３］に記載の感光性樹脂組成物。

（式中、Ｒ^１１ｄ、Ｒ^１２ｄ、Ｒ^１３ｄ、Ｒ^１４ｄ、Ｒ^１５ｄ及びＲ^１６ｄは、それぞれ独立に水素原子又は炭素数１～３の炭化水素基を表し、Ｚ^ｄは２価の有機基を表す。）
［５］ さらに（１Ｅ）増感剤、を含有する、［１］～［４］のいずれかに記載の感光性樹脂組成物。
［６］ （１Ａ）成分が、下記式（Ａ－１）で表される構造単位を有する、［１］～［５］のいずれかに記載の感光性樹脂組成物。

（式中、Ａはそれぞれ独立に４価の有機基を表し、Ｂはそれぞれ独立にインダン骨格を有する２価の有機基を表し、Ｒ^１及びＲ^２はそれぞれ独立に、水素原子又は１価の有機基を表す。ｎは５～２００の整数を表す。）
［７］ （１Ａ）成分が、下記式（Ａ－３）で表される構造単位を有する、［１］～［６］のいずれかに記載の感光性樹脂組成物。

（式中、Ａ１はそれぞれ独立に４価の有機基を表し、Ｒ^１１及びＲ^１２はそれぞれ独立に、水素原子又は１価の有機基を表し、Ｒ^１３はそれぞれ独立に、水素原子又はメチル基を表し、Ｘａはそれぞれ独立に、単結合、下記式（１）で表される基、又は式（２）で表される基を表し、Ｘｂはそれぞれ独立に、単結合、式（３）で表される基、又は式（４）で表される基を表す。ｍ１は１～５の整数を表し、ｎ１は５～２００の整数を表す。）

（式（１）～（４）中、＊は結合手を表す。）
［８］ 式（Ａ－１）中のＲ^１及びＲ^２は、それぞれ独立に水素原子又はラジカル反応性基を表す、［６］に記載の感光性樹脂組成物。
［９］ 式（Ａ－１）中のＲ^１及びＲ^２は、それぞれ独立に水素原子又は下式（Ａ－２）で表されるラジカル反応性基を表す、［６］又は［８］に記載の感光性樹脂組成物。

（式中、Ｒ^４～Ｒ^６は、それぞれ独立に、水素原子又は炭素原子数１～３の脂肪族炭化水素基を表し、ｐは１～１０の整数を表す。）
［１０］ （１Ａ）成分が、下記式（Ａ－４）で表される構造単位を有する、［１］～［９］のいずれかに記載の感光性樹脂組成物。

（式中、Ａ２はそれぞれ独立に４価の有機基を表し、Ｒ^２１又はＲ^２２は、それぞれ独立に水素原子又は下式（Ａ－５）で表される基を表す。ｎ２は５～２００の整数を表す。）

（式中、Ｒ^１４～Ｒ^１６は、それぞれ独立に、水素原子又は炭素原子数１～３の脂肪族炭化水素基を表し、ｐ１は１～１０の整数を表す。）
［１１］ （１Ａ）成分の重量平均分子量が、５０００以上１００００００以下である、［１］～［１０］のいずれかに記載の感光性樹脂組成物。
［１２］ （２Ａ）ポリイミド前駆体、
（２Ｂ）架橋剤、
（２Ｃ）光ラジカル発生剤、及び
（２Ｄ）エチレン性不飽和結合を有し、エチレン性不飽和結合のα位の炭素原子は炭化水素基及び水素原子から選択される基と結合しており、かつエチレン性不飽和結合のα位の炭素原子と結合している基の少なくとも一つが水素原子であるアリル化合物、
を含有する感光性樹脂組成物。
［１３］ （２Ｄ）成分が、下記式（Ｄ－１）で表される、［１２］に記載の感光性樹脂組成物。

（式中、Ｒ^１ｄ、Ｒ^２ｄ、及びＲ^３ｄは、それぞれ独立に水素原子又は炭素数１～３の炭化水素基を表す。＊は結合手を表す。）
［１４］ （２Ｄ）成分が、下記式（Ｄ－２）で表される、［１２］又は［１３］に記載の感光性樹脂組成物。

（式中、Ｒ^１１ｄ、Ｒ^１２ｄ、Ｒ^１３ｄ、Ｒ^１４ｄ、Ｒ^１５ｄ及びＲ^１６ｄは、それぞれ独立に水素原子又は炭素数１～３の炭化水素基を表し、Ｚ^ｄは２価の有機基を表す。）
［１５］ （２Ａ）成分が、下記式（Ａ－１）で表される構造単位を有する、［１２］～［１４］のいずれかに記載の感光性樹脂組成物。

（式中、Ａはそれぞれ独立に４価の有機基を表し、Ｂはそれぞれ独立に２価の有機基を表し、Ｒ^１及びＲ^２はそれぞれ独立に、水素原子又は１価の有機基を表す。ｎは５～２００の整数を表す。）
［１６］ 式（Ａ－１）のＲ^１及びＲ^２はそれぞれ独立に、少なくとも一つがラジカル反応性基である、［１５］に記載の感光性樹脂組成物。
［１７］ ラジカル反応性基が、下式（Ａ－２）で表される、［１６］に記載の感光性樹脂組成物。

（式中、Ｒ^４～Ｒ^６は、それぞれ独立に、水素原子又は炭素原子数１～３の脂肪族炭化水素基を表し、ｐは１～１０の整数を表す。）
［１８］ 式（Ａ－１）中のＢがインダン骨格を有する２価の有機基である、［１５］～［１７］のいずれかに記載の感光性樹脂組成物。
［１９］ （２Ａ）成分が、下記式（Ａ－３）で表される構造単位を有する、［１２］～［１８］のいずれかに記載の感光性樹脂組成物。

（式中、Ａ１はそれぞれ独立に４価の有機基を表し、Ｒ^１１及びＲ^１２はそれぞれ独立に、水素原子又は１価の有機基を表し、Ｒ^１３はそれぞれ独立に、水素原子又はメチル基を表し、Ｘａはそれぞれ独立に、単結合、下記式（１）で表される基、又は式（２）で表される基を表し、Ｘｂはそれぞれ独立に、単結合、式（３）で表される基、又は式（４）で表される基を表す。ｍ１は１～５の整数を表し、ｎ１は５～２００の整数を表す。）

（式（１）～（４）中、＊は結合手を表す。）
［２０］ （２Ｂ）成分が、エチレン性不飽和結合を有し、エチレン性不飽和結合のα位の炭素原子の少なくとも一つがカルボニル基又は芳香族基と結合している化合物である、［１２］～［１９］のいずれかに記載の感光性樹脂組成物。
［２１］ さらに（２Ｅ）増感剤、を含有する、［１２］～［２０］のいずれかに記載の感光性樹脂組成物。
［２２］ （２Ｄ）成分の含有量が、感光性樹脂組成物の不揮発成分を１００質量％としたとき、０．１質量％以上１５質量％以下である、［１２］～［２１］のいずれかに記載の感光性樹脂組成物。
［２３］ （２Ａ）成分の含有量が、感光性樹脂組成物の不揮発成分を１００質量％としたとき、７０質量％以上９８質量％以下である、［１２］～［２２］のいずれかに記載の感光性樹脂組成物。
［２４］ 支持体上に、［１］～［２３］のいずれかに記載の感光性樹脂組成物からなる感光性樹脂組成物層が形成されている、感光性フィルム。
［２５］ ［１］～［２３］のいずれかに記載の感光性樹脂組成物の硬化物により形成された絶縁層を含む半導体パッケージ基板。
［２６］ ［２５］に記載の半導体パッケージ基板を含む、半導体装置。
［２７］ 回路基板上に、［１］～［２３］のいずれかに記載の感光性樹脂組成物を含む感光性樹脂組成物層を形成する工程と、
感光性樹脂組成物層に活性光線を照射する工程と、
感光性樹脂組成物層を現像する工程と、を含む、半導体パッケージ基板の製造方法。 That is, the present invention includes the following.
[1] (1A) a polyimide precursor having an indane skeleton,
(1B) a crosslinking agent, and (1C) a photoradical generator,
A photosensitive resin composition comprising:
[2] The photosensitive resin composition according to [1], further comprising (1D) an allyl compound having an ethylenically unsaturated bond, in which the carbon atom at the α-position of the ethylenically unsaturated bond is bonded to a group selected from a hydrocarbon group and a hydrogen atom, and at least one of the groups bonded to the carbon atom at the α-position of the ethylenically unsaturated bond is a hydrogen atom.
[3] The photosensitive resin composition according to [2], wherein the component (1D) is represented by the following formula (D-1):

(In the formula, R ^1d , R ^2d , and R ^3d each independently represent a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms. * represents a bond.)
[4] The photosensitive resin composition according to [2] or [3], wherein the component (1D) is represented by the following formula (D-2):

(In the formula, R ^11d , R ^12d , R ^13d , R ^14d , R ^15d and R ^16d each independently represent a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms, and Z ^d represents a divalent organic group.)
[5] The photosensitive resin composition according to any one of [1] to [4], further comprising (1E) a sensitizer.
[6] The photosensitive resin composition according to any one of [1] to [5], wherein the component (1A) has a structural unit represented by the following formula (A-1):

(In the formula, each A independently represents a tetravalent organic group, each B independently represents a divalent organic group having an indane skeleton, ^R1 and ^R2 independently represent a hydrogen atom or a monovalent organic group, and n represents an integer of 5 to 200.)
[7] The photosensitive resin composition according to any one of [1] to [6], wherein the component (1A) has a structural unit represented by the following formula (A-3):

(In the formula, A1 each independently represents a tetravalent organic group, R ¹¹ and R ¹² each independently represent a hydrogen atom or a monovalent organic group, R ¹³ each independently represent a hydrogen atom or a methyl group, Xa each independently represent a single bond, a group represented by the following formula (1) or a group represented by formula (2), and Xb each independently represent a single bond, a group represented by formula (3) or a group represented by formula (4). m1 represents an integer of 1 to 5, and n1 represents an integer of 5 to 200.)

(In formulas (1) to (4), * represents a bond.)
[8] The photosensitive resin composition according to [6], wherein R ¹ and R ² in formula (A-1) each independently represent a hydrogen atom or a radically reactive group.
[9] The photosensitive resin composition according to [6] or [8], wherein R ¹ and R ² in formula (A-1) each independently represent a hydrogen atom or a radical reactive group represented by the following formula (A-2):

(In the formula, R ⁴ to R ⁶ each independently represent a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms, and p represents an integer of 1 to 10.)
[10] The photosensitive resin composition according to any one of [1] to [9], wherein the component (1A) has a structural unit represented by the following formula (A-4):

(In the formula, A2 each independently represents a tetravalent organic group, R ²¹ and R ²² each independently represent a hydrogen atom or a group represented by the following formula (A-5), and n2 represents an integer of 5 to 200.)

(In the formula, R ¹⁴ to R ¹⁶ each independently represent a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms, and p1 represents an integer of 1 to 10.)
[11] The photosensitive resin composition according to any one of [1] to [10], wherein the weight average molecular weight of the component (1A) is 5,000 or more and 1,000,000 or less.
[12] (2A) a polyimide precursor,
(2B) a crosslinking agent,
(2C) a photoradical generator; and (2D) an allyl compound having an ethylenically unsaturated bond, in which the carbon atom at the α-position of the ethylenically unsaturated bond is bonded to a group selected from a hydrocarbon group and a hydrogen atom, and at least one of the groups bonded to the carbon atom at the α-position of the ethylenically unsaturated bond is a hydrogen atom.
A photosensitive resin composition comprising:
[13] The photosensitive resin composition according to [12], wherein the component (2D) is represented by the following formula (D-1):

(In the formula, R ^1d , R ^2d , and R ^3d each independently represent a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms. * represents a bond.)
[14] The photosensitive resin composition according to [12] or [13], wherein the component (2D) is represented by the following formula (D-2):

(In the formula, R ^11d , R ^12d , R ^13d , R ^14d , R ^15d and R ^16d each independently represent a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms, and Z ^d represents a divalent organic group.)
[15] The photosensitive resin composition according to any one of [12] to [14], wherein the component (2A) has a structural unit represented by the following formula (A-1):

(In the formula, each A independently represents a tetravalent organic group, each B independently represents a divalent organic group, ^R1 and ^R2 independently represent a hydrogen atom or a monovalent organic group, and n represents an integer of 5 to 200.)
[16] The photosensitive resin composition according to [15], wherein at least one of R ¹ and R ² in formula (A-1) is independently a radical reactive group.
[17] The photosensitive resin composition according to [16], wherein the radical reactive group is represented by the following formula (A-2):

(In the formula, R ⁴ to R ⁶ each independently represent a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms, and p represents an integer of 1 to 10.)
[18] The photosensitive resin composition according to any one of [15] to [17], wherein B in formula (A-1) is a divalent organic group having an indane skeleton.
[19] The photosensitive resin composition according to any one of [12] to [18], wherein the component (2A) has a structural unit represented by the following formula (A-3):

(In the formula, A1 each independently represents a tetravalent organic group, R ¹¹ and R ¹² each independently represent a hydrogen atom or a monovalent organic group, R ¹³ each independently represent a hydrogen atom or a methyl group, Xa each independently represent a single bond, a group represented by the following formula (1) or a group represented by formula (2), and Xb each independently represent a single bond, a group represented by formula (3) or a group represented by formula (4). m1 represents an integer of 1 to 5, and n1 represents an integer of 5 to 200.)

(In formulas (1) to (4), * represents a bond.)
[20] The photosensitive resin composition according to any one of [12] to [19], wherein the component (2B) is a compound having an ethylenically unsaturated bond, and at least one carbon atom at the α-position of the ethylenically unsaturated bond is bonded to a carbonyl group or an aromatic group.
[21] The photosensitive resin composition according to any one of [12] to [20], further comprising (2E) a sensitizer.
[22] The photosensitive resin composition according to any one of [12] to [21], wherein the content of the component (2D) is 0.1% by mass or more and 15% by mass or less, when the total amount of non-volatile components of the photosensitive resin composition is 100% by mass.
[23] The photosensitive resin composition according to any one of [12] to [22], wherein the content of the component (2A) is 70% by mass or more and 98% by mass or less, when the total amount of non-volatile components in the photosensitive resin composition is 100% by mass.
[24] A photosensitive film comprising a support and a photosensitive resin composition layer formed on the support, the photosensitive resin composition layer comprising the photosensitive resin composition according to any one of [1] to [23].
[25] A semiconductor package substrate comprising an insulating layer formed from a cured product of the photosensitive resin composition according to any one of [1] to [23].
[26] A semiconductor device comprising the semiconductor package substrate according to [25].
[27] A step of forming a photosensitive resin composition layer containing the photosensitive resin composition according to any one of [1] to [23] on a circuit board;
A step of irradiating the photosensitive resin composition layer with actinic rays;
and developing the photosensitive resin composition layer.

The present invention provides a photosensitive resin composition that has excellent limiting resolution and dielectric properties of the cured product, and a photosensitive film, a semiconductor package substrate, a semiconductor device, and a method for manufacturing a semiconductor package substrate, which are obtained using the photosensitive resin composition.

The present invention also provides a photosensitive resin composition capable of producing a cured product having good limiting resolution and via hole shape and excellent dielectric properties, and a photosensitive film, semiconductor package substrate, semiconductor device, and method for producing a semiconductor package substrate obtained using the photosensitive resin composition.

The first and second photosensitive resin compositions, photosensitive films, semiconductor package substrates, semiconductor devices, and methods for manufacturing semiconductor package substrates according to the present invention will be described in detail below.

In this specification, components (1A) and (2A) are sometimes collectively referred to as "component (A)", components (1B) and (2B) are sometimes collectively referred to as "component (B)", components (1C) and (2C) are sometimes collectively referred to as "component (C)", components (1D) and (2D) are sometimes collectively referred to as "component (D)", components (1E) and (2E) are sometimes collectively referred to as "component (E)", components (1F) and (2F) are sometimes collectively referred to as "component (F)", and components (1G) and (2G) are sometimes collectively referred to as "component (G)".

[Photosensitive resin composition of the first embodiment]
The photosensitive resin composition of the first embodiment of the present invention contains (1A) a polyimide precursor having an indane skeleton, (1B) a crosslinking agent, and (1C) a photoradical generator. By incorporating the components (1A) to (1C) in combination into the photosensitive resin composition, a cured product having excellent limiting resolution and dielectric properties can be obtained. In addition, the photosensitive resin composition of the first embodiment can usually provide a cured product having a good via hole shape and excellent warpage.

The photosensitive resin composition of the first embodiment of the present invention is suitable as a negative-type photosensitive resin composition.

The photosensitive resin composition of the first embodiment may further contain optional components in combination with the components (1A) to (1C). Examples of optional components include (1D) an allyl compound having an ethylenically unsaturated bond, the α-position of which is a group selected from a hydrocarbon group and a hydrogen atom, and at least one of the groups at the α-position of the ethylenically unsaturated bond is a hydrogen atom, (1E) a sensitizer, (1F) other additives, and (1G) a solvent. Each component contained in the photosensitive resin composition of the first embodiment will be described in detail below.

<(1A) Polyimide precursor having an indane skeleton>
The photosensitive resin composition contains a polyimide precursor having an indane skeleton as component (1A). By including component (1A) in the photosensitive resin composition, a cured product having excellent limit resolution and excellent dielectric properties can be obtained. The component (1A) may be used alone or in combination of two or more.

The component (1A) may be a resin having an indane skeleton and a plurality of amic acid and/or amic acid ester structures. The indane skeleton represents the skeleton shown in the following formula (a1), and is preferably a trimethylindane skeleton shown in the following formula (a2). The amic acid and amic acid ester represent compounds obtained by reacting a tetracarboxylic dianhydride with a diamine compound.

Examples of tetracarboxylic acid dianhydrides include aliphatic tetracarboxylic acid dianhydrides and aromatic tetracarboxylic acid dianhydrides, with aliphatic tetracarboxylic acid dianhydrides being preferred. Examples of tetracarboxylic acid dianhydrides include 4,4'-oxydiphthalic acid dianhydride, 3,3',4,4'-benzophenone tetracarboxylic acid dianhydride, pyromellitic acid dianhydride, 3,4,9,10-perylene tetracarboxylic acid dianhydride, 3,3',4,4'-diphenylsulfone tetracarboxylic acid dianhydride, 3,3',4,4'-biphenyl tetracarboxylic acid dianhydride, 1,2,5,6-naphthalene tetracarboxylic acid dianhydride, 3,3',4 ,4'-para-terphenyltetracarboxylic dianhydride, 3,3',4,4'-meta-terphenyltetracarboxylic dianhydride, 1,2,4,5-cyclohexanetetracarboxylic dianhydride, bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride, bicyclo[2.2.1]heptane-2-endo-3-endo-5-exo-6-exo-2,3,5,6-tetracarboxylic dianhydride, bicyclo[2.2.1]heptane-2-endo-3-endo-5-exo-6-exo-2,3,5,6-tetracarboxylic dianhydride 2-exo-3-exo-5-exo-6-exo-2,3,5,6-tetracarboxylic dianhydride, bicyclo[2.2.1]heptane-2,3,5,6-tetracarboxylic dianhydride, decahydro-dimethanonaphthalene tetracarboxylic dianhydride, bis[2-(3-aminopropoxy)ethyl]ether, 1,4-butanediol-bis(3-aminopropyl)ether, 3,9-bis(3-aminopropyl)-2,4,8,10-tetracarboxylic dianhydride Examples include tetraspiro-5,5-undecane, 1,2-bis(2-aminoethoxy)ethane, 1,2-bis(3-aminopropoxy)ethane, triethylene glycol-bis(3-aminopropyl)ether, polyethylene glycol-bis(3-aminopropyl)ether, 3,9-bis(3-aminopropyl)-2,4,8,10-tetraspiro-5,5-undecane, and 1,4-butanediol-bis(3-aminopropyl)ether.

As the diamine compound, for example, a diamine having an indane skeleton is preferably used. Examples of the diamine having an indane skeleton include the diamines exemplified below.

（式中、Ａはそれぞれ独立に４価の有機基を表し、Ｂはそれぞれ独立にインダン骨格を有する２価の有機基を表し、Ｒ^１及びＲ^２はそれぞれ独立に、水素原子又は１価の有機基を表す。ｎは５～２００の整数を表す。） From the viewpoint of obtaining a cured product that has excellent limiting resolution and excellent dielectric properties, the component (1A) preferably has a structural unit represented by the following formula (A-1).

(In the formula, each A independently represents a tetravalent organic group, each B independently represents a divalent organic group having an indane skeleton, ^R1 and ^R2 independently represent a hydrogen atom or a monovalent organic group, and n represents an integer of 5 to 200.)

In formula (A-1), A each independently represents a tetravalent organic group. The tetravalent organic group is preferably a tetravalent organic group having 6 to 40 carbon atoms. Examples of the tetravalent organic group having 6 to 40 carbon atoms include an aromatic group in which the -COOR ¹ group and the -COOR ² group and the -CONH- group are in the ortho position with respect to each other, or an alicyclic aliphatic group (R ¹ and R ² are the same as R ¹ and R ² in formula (A-1)). Examples of such groups include groups (i) to (ix). Among them, A is preferably a tetravalent organic group exemplified below, and more preferably a group (viii) or a group (ix). In the formula, * represents a bond.

In formula (A-1), each B independently represents a divalent organic group having an indane skeleton. The divalent organic group having an indane skeleton preferably has an aromatic ring in addition to the indane skeleton. Examples of the divalent organic group having an indane skeleton include the groups (1a) to (7a) exemplified below, with the group (7a) being preferred. In the formula, * represents a bond.

（式中、Ｒ^４～Ｒ^６は、それぞれ独立に、水素原子又は炭素原子数１～３の脂肪族炭化水素基を表し、ｐは１～１０の整数を表す。） R ¹ and R ² in formula (A-1) each independently represent a hydrogen atom or a monovalent organic group. Examples of the monovalent organic group include a saturated aliphatic group having 1 to 4 carbon atoms; a reactive group that can be polymerized by a radical generated by heat or light, i.e., a radical reactive group, and the like, and the radical reactive group is preferable. Examples of the radical reactive group include a vinyl group, an allyl group, a propargyl group, a butenyl group, an ethynyl group, a phenylethynyl group, a maleimide group, a nadimide group, a (meth)acryloyl group, and a group represented by formula (A-2) described below. The "(meth)acryloyl group" includes a methacryloyl group, an acryloyl group, and a combination thereof. It is preferable that at least one of R ¹ and R ² in formula (A-1) is independently a radical reactive group, and it is more preferable that both are radical reactive groups. As the radical reactive group, a group represented by the following formula (A-2) is preferable.

(In the formula, R ⁴ to R ⁶ each independently represent a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms, and p represents an integer of 1 to 10.)

R ⁴ to R ⁶ in formula (A-2) each independently represent a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms. Examples of the aliphatic hydrocarbon group having 1 to 3 carbon atoms include an alkyl group having 1 to 3 carbon atoms. Examples of the alkyl group having 1 to 3 carbon atoms include a methyl group, an ethyl group, an n-propyl group, and a 2-propyl group, and among these, a methyl group is preferable.

As the saturated aliphatic group having 1 to 4 carbon atoms, an alkyl group having 1 to 4 carbon atoms is preferable, and examples thereof include a methyl group, an ethyl group, an n-propyl group, a 2-propyl group, and an n-butyl group.

In formula (A-2), p represents an integer from 1 to 10, preferably an integer from 1 to 5, more preferably an integer from 1 to 3, and even more preferably 2.

In formula (A-1), at least one of R ¹ and R ² is preferably a radical reactive group, more preferably at least one of R 1 and R 2 is a group represented by formula (A-2), and further preferably both of R ¹ and R ² are groups represented by formula (A-2).

In formula (A-1), n represents an integer from 5 to 200, preferably an integer from 5 to 150, more preferably an integer from 5 to 100, and even more preferably an integer from 5 to 70.

（式中、Ａ１はそれぞれ独立に４価の有機基を表し、Ｒ^１１及びＲ^１２はそれぞれ独立に、水素原子又は１価の有機基を表し、Ｒ^１３はそれぞれ独立に、水素原子又はメチル基を表し、Ｘａはそれぞれ独立に、単結合、下記式（１）で表される基、又は式（２）で表される基を表し、Ｘｂはそれぞれ独立に、単結合、式（３）で表される基、又は式（４）で表される基を表す。ｍ１は１～５の整数を表し、ｎ１は５～２００の整数を表す。）

（式（１）～（４）中、＊は結合手を表す。） The component (1A) preferably has a structural unit represented by formula (A-3).

(In the formula, A1 each independently represents a tetravalent organic group, R ¹¹ and R ¹² each independently represent a hydrogen atom or a monovalent organic group, R ¹³ each independently represent a hydrogen atom or a methyl group, Xa each independently represent a single bond, a group represented by the following formula (1) or a group represented by formula (2), and Xb each independently represent a single bond, a group represented by formula (3) or a group represented by formula (4). m1 represents an integer of 1 to 5, and n1 represents an integer of 5 to 200.)

(In formulas (1) to (4), * represents a bond.)

Each A1 in formula (A-3) independently represents a tetravalent organic group, and A1 is the same as A in formula (A-1).

R ¹¹ and R ¹² in formula (A-3) each independently represent a hydrogen atom or a monovalent organic group and are the same as R ¹ and R ² in formula (A-1).

Each Xa independently represents a single bond, a group represented by formula (1), or a group represented by formula (2).

Examples of the group represented by formula (1) include a 1,2-phenylene group, a 1,3-phenylene group, and a 1,4-phenylene group.

Examples of the group represented by formula (2) include the following groups (2-1) to (2-6).

Among these, Xa is preferably a group represented by formula (2), and more preferably a group represented by formula (2-1).

Each Xb independently represents a single bond, a group represented by formula (3), or a group represented by formula (4).

Examples of the group represented by formula (3) include a 1,2-phenylene group, a 1,3-phenylene group, and a 1,4-phenylene group.

Examples of the group represented by formula (4) include the following groups.

Among these, Xb is preferably a group represented by formula (3), and more preferably a 1,4-phenylene group.

Each R ¹³ independently represents a hydrogen atom or a methyl group, and preferably represents a methyl group.

m1 represents an integer from 1 to 5, preferably an integer from 1 to 3, more preferably 2 or 3, and even more preferably 3.

n1 represents an integer from 5 to 200 and is the same as n in formula (A-1).

（式中、Ａ２はそれぞれ独立に４価の有機基を表し、Ｒ^２１又はＲ^２２は、それぞれ独立に水素原子又は下式（Ａ－５）で表される基を表す。ｎ２は５～２００の整数を表す。）

（式中、Ｒ^１４～Ｒ^１６は、それぞれ独立に、水素原子又は炭素原子数１～３の脂肪族炭化水素基を表し、ｐ１は１～１０の整数を表す。） The component (1A) preferably has a structural unit represented by the following (A-4).

(In the formula, A2 each independently represents a tetravalent organic group, R ²¹ and R ²² each independently represent a hydrogen atom or a group represented by the following formula (A-5), and n2 represents an integer of 5 to 200.)

(In the formula, R ¹⁴ to R ¹⁶ each independently represent a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms, and p1 represents an integer of 1 to 10.)

Each A2 in formula (A-4) independently represents a tetravalent organic group and is the same as A in formula (A-1).

R ²¹ and R ²² in formula (A-4) each independently represent a hydrogen atom or a group represented by formula (A-5), with the group represented by formula (A-5) being preferred. R ¹⁴ to R ¹⁶ in the group represented by formula (A-5) each independently represent a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms and are the same as R ⁴ to R ⁶ in the group represented by formula (A-2). p1 in the group represented by formula (A-5) represents an integer of 1 to 10 and is the same as p in the group represented by formula (A-2).

n2 represents an integer from 5 to 200 and is the same as n in formula (A-1).

The (1A) component may be a copolymer that contains structural units that do not contain an indane skeleton, in addition to structural units that have an indane skeleton. For example, the (1A) component may contain structural units other than the structural units represented by formula (A-1) (structural units that do not contain an indane skeleton), in addition to the structural units represented by formula (A-1).

Specific examples of the component (1A) include the following compounds (A1) to (A5). However, the component (1A) is not limited to these specific examples. In the formula, n is an integer of 5 to 200.

From the viewpoint of obtaining a significant effect of the present invention, the weight average molecular weight of component (1A) is preferably 5,000 or more, more preferably 10,000 or more, and even more preferably 50,000 or more, and is preferably 1,000,000 or less, more preferably 500,000 or less, and even more preferably 200,000 or less. The weight average molecular weight of the resin can be measured as a polystyrene-equivalent value by gel permeation chromatography (GPC).

There are no particular limitations on the method for producing component (1A). Component (1A) can usually be obtained by reacting the above-mentioned tetracarboxylic dianhydride with a diamine compound. Component (1A) can be produced, for example, by the production method described in JP-A-2015-209461 or JP-A-2015-214680.

In order to obtain the effects of the present invention more significantly, the content of the (1A) component is preferably 10% by mass or more, more preferably 20% by mass or more, even more preferably 30% by mass or more, 40% by mass or more, 50% by mass or more, 60% by mass or more, 70% by mass or more, and preferably 99% by mass or less, more preferably 97% by mass or less, and even more preferably 95% by mass or less, when the non-volatile components of the photosensitive resin composition are taken as 100% by mass. In the present invention, the content of each component in the photosensitive resin composition is the value when the non-volatile components in the photosensitive resin composition are taken as 100% by mass, unless otherwise specified.

<(1B) Crosslinking Agent>
The photosensitive resin composition contains a crosslinking agent (1B) as the component (1B). However, the component (1B) does not include those corresponding to the components (1A) and (1D). When the photosensitive resin composition is irradiated with active light and a radical is generated from the photoradical generator, a crosslinking reaction of the component (1B) occurs, and the composition becomes insoluble in the developer. Therefore, during development, the photosensitive resin composition can be selectively removed from areas other than those where the crosslinking reaction has progressed, and a negative pattern can be advantageously formed. The component (1B) may be used alone or in combination of two or more.

As component (1B), a compound capable of causing a crosslinking reaction to proceed during development can be used. Such a compound is preferably a compound having an ethylenically unsaturated bond, and more preferably a compound having an ethylenically unsaturated bond and in which at least one of the carbon atoms at the α-position of the ethylenically unsaturated bond is bonded to a carbonyl group or an aromatic group. The carbon atom at the α-position of the ethylenically unsaturated bond refers to the first carbon atom adjacent to the carbon atom bonded by a carbon-carbon double bond.

The ethylenically unsaturated bond represents a carbon-carbon double bond. Therefore, the (1B) component may contain a group having an ethylenically unsaturated bond (hereinafter, referred to as "ethylenically unsaturated group" as appropriate). The ethylenically unsaturated group is usually a monovalent group, such as a vinyl group, an allyl group, a propargyl group, a butenyl group, an ethynyl group, a phenylethynyl group, a maleimide group, a nadimide group, or a (meth)acryloyl group. From the viewpoint of the reactivity of photoradical polymerization, the (meth)acryloyl group and the phenylethynyl group are preferred, and the (meth)acryloyl group is particularly preferred. The "(meth)acryloyl group" includes a methacryloyl group, an acryloyl group, and a combination thereof. The (1B) component contains an ethylenically unsaturated group, and therefore is capable of photoradical polymerization. However, in order to perform photoradical polymerization under general conditions, a compound having a carbonyl group or an aromatic group at at least one of the α positions of the ethylenically unsaturated bond is preferred. The number of ethylenically unsaturated groups per molecule of component (1B) is preferably 1 or more, more preferably 2 or more. In addition, when component (1B) contains two or more ethylenically unsaturated groups per molecule, those ethylenically unsaturated groups may be the same or different.

（式（Ｂ－１）中、Ｒ^３１は、それぞれ独立に、水素原子、又は炭素原子数１～４の直鎖状もしくは分岐状アルキル基を表し、Ｚは、それぞれ独立に、酸素原子を含んでもよい炭素原子数１～２０の直鎖状もしくは分岐状のアルキレン基、酸素原子を含んでもよいアリーレン基、又は酸素原子を含んでもよい炭素原子数２～２０の直鎖状もしくは分岐状のアルケニレン基を表し、Ａ^１は、炭素原子数１～１０の直鎖状、環状もしくは分岐状のｎｂ価の有機基を表す。ｎｂは２～６の正の整数を示す。） The component (1B) is preferably a compound represented by the following general formula (B-1).

(In formula (B-1), R ³¹ each independently represents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms, Z each independently represents a linear or branched alkylene group having 1 to 20 carbon atoms which may contain an oxygen atom, an arylene group which may contain an oxygen atom, or a linear or branched alkenylene group having 2 to 20 carbon atoms which may contain an oxygen atom, and A ¹ represents a linear, cyclic or branched nb-valent organic group having 1 to 10 carbon atoms, nb representing a positive integer of 2 to 6.)

Each R ³¹ independently represents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms. Examples of the linear or branched alkyl group having 1 to 4 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, a 1-butyl group, a s-butyl group, and a t-butyl group. Of these, a hydrogen atom or a methyl group is preferable as R ³¹ .

Z each independently represents a linear or branched alkylene group having 1 to 20 carbon atoms which may contain an oxygen atom, an arylene group which may contain an oxygen atom, or a linear or branched alkenylene group having 2 to 20 carbon atoms which may contain an oxygen atom. As the linear or branched alkylene group having 1 to 20 carbon atoms, a linear or branched alkylene group having 1 to 10 carbon atoms is preferred, and a linear or branched alkylene group having 1 to 6 carbon atoms is more preferred. Examples of such alkylene groups include a methylene group, an ethylene group, a propylene group, a butylene group, a pentylene group, and a hexylene group, and a methylene group is preferred. The alkylene group may also be an oxyalkylene group containing an oxygen atom, and specific examples of such groups include, for example, those shown below. In the formula, "*" represents a bond, and a represents an integer of 1 to 23.

The arylene group which may contain an oxygen atom is preferably an arylene group having 6 to 20 carbon atoms, more preferably an arylene group having 6 to 15 carbon atoms, and even more preferably an arylene group having 6 to 10 carbon atoms. Examples of such an arylene group include a phenylene group and a naphthylene group. The arylene group may also contain an oxygen atom, and specific examples of such groups include those shown below. In the formula, "*" represents a bond, and a represents an integer of 1 to 23.

As the linear or branched alkenylene group having 2 to 20 carbon atoms which may contain an oxygen atom, a linear or branched alkenylene group having 2 to 10 carbon atoms is preferred, and a linear or branched alkenylene group having 2 to 6 carbon atoms is more preferred. Examples of such an alkenylene group include an ethenylene group, a propenylene group, a butenylene group, a pentenylene group, and a hexenylene group. The alkenylene group may also be an oxyalkenylene group containing an oxygen atom, and specific examples of such groups include those shown below. In the formula, "*" represents a bond, and a represents an integer of 1 to 23. The alkenylene group is preferably a propenylene group.

Among these, Z is preferably a linear or branched alkylene group having 1 to 20 carbon atoms which may contain an oxygen atom, and more preferably an oxyalkylene group.

A ¹ represents a linear, cyclic or branched nb-valent organic group having 1 to 10 carbon atoms. Examples of the nb-valent organic group include an nb-valent hydrocarbon group which may contain an oxygen atom, an nb-valent group derived from bisphenol, an nb-valent group derived from fluorene, an nb-valent group derived from tricyclodecane, or an nb-valent group derived from an isocyanuric group. Examples of the nb-valent hydrocarbon group which may contain an oxygen atom include an nb-valent aliphatic hydrocarbon group which may contain an oxygen atom, and an nb-valent aromatic hydrocarbon group which may contain an oxygen atom. An nb-valent aliphatic hydrocarbon group which may contain an oxygen atom is preferred, and when nb is 2, an alkylene group is preferred. Specific examples of the group represented by ^{A 1} include, for example, those shown below. In the formula, "*" represents a bond.

nb is a positive integer from 2 to 6, preferably a positive integer from 2 to 5, more preferably a positive integer from 2 to 4, and even more preferably 2 or 3.

（式（Ｂ－２）中、Ｒ^３２は、それぞれ独立に水素原子、又はメチル基を表す。） The component (1B) is preferably a compound represented by the following general formula (B-2).

(In formula (B-2), R ³² each independently represents a hydrogen atom or a methyl group.)

R ³² represents a hydrogen atom or a methyl group, and is preferably a methyl group.

Specific examples of the component (1B) include the following compounds (CL-1) to (CL-11), however, the component (1B) is not limited to these.

Component (1B) may be a commercially available product. Examples of commercially available products include NK Ester D-TMP, 4G, 9G, 14G, 23G, and DCP manufactured by Shin-Nakamura Chemical Co., Ltd.

From the viewpoint of obtaining a significant effect of the present invention, the content of the (1B) component is preferably 1 part by mass or more, more preferably 2 parts by mass or more, and even more preferably 3 parts by mass or more, per 100 parts by mass of the (1A) component, and is preferably 25 parts by mass or less, more preferably 20 parts by mass or less, and even more preferably 15 parts by mass or less.

From the viewpoint of obtaining a significant effect of the present invention, the content of component (1B) is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, even more preferably 1% by mass or more, 2% by mass or more, 3% by mass or more, and is preferably 20% by mass or less, more preferably 18% by mass or less, even more preferably 15% by mass or less, when the non-volatile components of the photosensitive resin composition are taken as 100% by mass.

<(1C) Photoradical generator>
The photosensitive resin composition contains a photoradical generator (1C). The component (1C) generates radicals when irradiated with actinic rays, and the portion of the photosensitive resin composition where a crosslinking reaction or the like has occurred due to the radicals does not dissolve in the developer. Therefore, during development, it becomes possible to selectively remove the photosensitive resin composition from the portion other than the portion where the crosslinking reaction has progressed, and a negative pattern can be advantageously formed. The component (1C) may be used alone or in combination of two or more. In addition, the component (1C) does not include components (1A) to (1B) and components (1D) to (1E) described below.

(1C) components include benzophenone, o-benzoyl methyl benzoate, 4-benzoyl-4'-methyldiphenyl ketone, dibenzyl ketone, fluorenone and other benzophenone derivatives, 2,2'-diethoxyacetophenone, 2-hydroxy-2-methylpropiophenone, 1-hydroxycyclohexyl phenyl ketone and other acetophenone derivatives, thioxanthone, 2-methylthioxanthone, 2-isopropylthioxanthone, diethylthioxanthone and other thioxanthone derivatives; benzil, benzil dimethyl ketal, benzyl-β-methoxyethyl acetal and other benzyl derivatives; benzoin, benzoin methyl ether and other benzoin derivatives; 1-phenyl-1,2-butanedione-2-(o- methoxycarbonyl) oxime, 1-phenyl-1,2-propanedione-2-(o-methoxycarbonyl) oxime, 1-phenyl-1,2-propanedione-2-(o-ethoxycarbonyl) oxime, 1-phenyl-1,2-propanedione-2-(o-benzoyl) oxime, 1,3-diphenylpropanetrione-2-(o-ethoxycarbonyl) oxime, 1-phenyl-3-ethoxypropanetrione-2-(o-benzoyl) oxime and other oximes; N-arylglycines such as N-phenylglycine; peroxides such as benzoyl perchloride; aromatic biimidazoles; titanocenes; α-(n-octanesulfonyloxyimino)-4-methoxybenzyl cyanide; and the like. Among these, oximes are preferred as the component (1C) from the viewpoint of photosensitivity.

Component (1C) may be a commercially available product. Examples of commercially available products include "Irgacure-OXE02" and "Irgacure-OXE04" manufactured by BASF.

From the viewpoint of obtaining a significant effect of the present invention, the content of component (1C) is preferably 0.1 parts by mass or more, more preferably 0.5 parts by mass or more, and even more preferably 1 part by mass or more, per 100 parts by mass of component (1A), and is preferably 20 parts by mass or less, more preferably 17 parts by mass or less, and even more preferably 15 parts by mass or less.

From the viewpoint of obtaining a significant effect of the present invention, the content of component (1C) is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, and even more preferably 1% by mass or more, when the non-volatile components of the photosensitive resin composition are taken as 100% by mass, and is preferably 20% by mass or less, more preferably 17% by mass or less, and even more preferably 15% by mass or less.

<(1D) Allyl Compound Having an Ethylenically Unsaturated Bond, in Which the Carbon Atom at the α-Position of the Ethylenically Unsaturated Bond is Bonded to a Group Selected from a Hydrocarbon Group and a Hydrogen Atom, and at Least One of the Groups Bonded to the Carbon Atom at the α-Position of the Ethylenically Unsaturated Bond is a Hydrogen Atom>
The photosensitive resin composition may contain, as an optional component, an allyl compound (1D) having an ethylenically unsaturated bond, the carbon atom at the α-position of the ethylenically unsaturated bond being bonded to a group selected from a hydrocarbon group and a hydrogen atom, and at least one of the groups bonded to the carbon atom at the α-position of the ethylenically unsaturated bond being a hydrogen atom. The component (1D) excludes the above-mentioned components (1A) to (1C) and the component (1E) described below. The carbon atom at the α-position of the ethylenically unsaturated bond is the first carbon atom adjacent to the carbon atom bonded by a carbon-carbon double bond, and specifically, for example, as shown in the following formula (d1), it indicates the carbon atom (C1 to C4) adjacent to the carbon atom bonded by a carbon-carbon double bond.

When the photosensitive resin composition is a negative type, the inclusion of the (1D) component in the photosensitive resin composition can prevent the radical reaction from progressing to unexposed areas, making it possible to obtain a cured product with a good via hole shape.

When the (1D) component has multiple ethylenically unsaturated bonds, it is sufficient that at least one of the multiple α-position carbon atoms is bonded to a hydrogen atom, and in this case, the other α-position carbon atoms may be bonded to groups other than carbonyl groups and aromatic groups. The (1D) component is preferably an allyl compound in which the α-position carbon atoms of the ethylenically unsaturated bonds are composed only of groups selected from hydrocarbon groups and hydrogen atoms, and at least one of the groups bonded to the α-position carbon atoms of the ethylenically unsaturated bonds is a hydrogen atom.

（式中、Ｒ^１ｄ、Ｒ^２ｄ、及びＲ^３ｄは、それぞれ独立に水素原子又は炭素数１～３の炭化水素基を表す。＊は結合手を表す。） The component (1D) is preferably represented by the following formula (D-1).

(In the formula, R ^1d , R ^2d , and R ^3d each independently represent a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms. * represents a bond.)

In formula (D-1), R ^1d , R ^2d , and R ^3d each independently represent a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms. Examples of the hydrocarbon group having 1 to 3 carbon atoms include an aliphatic hydrocarbon group having 1 to 3 carbon atoms. Examples of the aliphatic hydrocarbon group having 1 to 3 carbon atoms include a saturated aliphatic hydrocarbon group, such as an alkyl group having 1 to 3 carbon atoms. Examples of the alkyl group having 1 to 3 carbon atoms include a methyl group, an ethyl group, an n-propyl group, and an isopropyl group, and among these, a methyl group is preferred. R ^1d , R ^2d , and R ^3d are preferably a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, more preferably a hydrogen atom or a methyl group, and even more preferably a hydrogen atom.

The number of structures represented by formula (D-1) per molecule of component (1D) is preferably 1 or more, more preferably 2 or more, and preferably 10 or less, more preferably 5 or less, and even more preferably 3 or less. The number of structures represented by formula (D-1) per molecule of component (1D) is preferably 2 or 3, and more preferably 2. In addition, when the number of structures represented by formula (D-1) per molecule of component (D) is 2 or more, those structures represented by formula (D-1) may be the same or different.

（式中、Ｒ^１１ｄ、Ｒ^１２ｄ、Ｒ^１３ｄ、Ｒ^１４ｄ、Ｒ^１５ｄ及びＲ^１６ｄは、それぞれ独立に水素原子又は炭素数１～３の炭化水素基を表し、Ｚ^ｄは２価の有機基を表す。） The component (1D) is preferably a compound represented by the following formula (D-2).

(In the formula, R ^11d , R ^12d , R ^13d , R ^14d , R ^15d and R ^16d each independently represent a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms, and Z ^d represents a divalent organic group.)

R ^11d , R ^12d , R ^13d , R ^14d , R ^15d and R ^16d each independently represent a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms and are the same as R ^1d , R ^2d and R ^3d in formula (D-1).

^Zd represents a divalent organic group. Examples of the divalent organic group include a divalent aliphatic hydrocarbon group, a divalent aromatic hydrocarbon group, a divalent group containing a heteroatom, and a divalent group consisting of a combination of two or more of these. Examples of the heteroatom include an oxygen atom, a sulfur atom, a nitrogen atom, and a halogen atom.

The divalent aliphatic hydrocarbon group may be linear, branched, or cyclic. The divalent aliphatic hydrocarbon group may be saturated or unsaturated. The number of carbon atoms in the divalent aliphatic hydrocarbon group is preferably 1 to 10, more preferably 1 to 5. Examples of the divalent aliphatic hydrocarbon group include an alkylene group, an alkenylene group, and an alkynylene group. Examples of the alkylene group include a methylene group, an ethylene group, a propylene group, a butylene group, a pentylene group, and a hexylene group. Examples of the alkenylene group include an ethenylene group, a propenylene group, a butenylene group, a pentenylene group, and a hexenylene group. Examples of the alkynylene group include an ethynylene group, a propenylene group, and the like.

The number of carbon atoms in the divalent aromatic hydrocarbon group is preferably 6 to 20, and more preferably 6 to 15. Examples of the divalent aromatic hydrocarbon group include arylene groups, and examples of the arylene group include 1,2-phenylene groups, 1,3-phenylene groups, 1,4-phenylene groups, naphthylene groups, anthracenylene groups, biphenylene groups, and 9,9-diphenyl-9H-fluorenylene groups.

（＊は結合手を表す。） Examples of the divalent group containing a hetero atom include -O-, -S-, -NH-, -C(=O)-, -C(=O)-O-, -O-C(=O)-O-, -C(=O)-NH-, -S(=O) ₂ -, -S(=O) ₂ -O-, and the groups shown below.

(* represents a bond.)

Examples of the divalent group consisting of two or more combinations include a divalent aliphatic hydrocarbon group, a divalent aromatic hydrocarbon group, and a divalent group containing a heteroatom bonded thereto; a divalent aromatic hydrocarbon group and a divalent group containing a heteroatom bonded thereto; and a divalent aliphatic hydrocarbon group and a divalent group containing a heteroatom bonded thereto. Specific examples of the divalent group consisting of two or more combinations as described above include the following groups (d-1) to (d-6), but the present invention is not limited thereto. In the groups (d-1) to (d-6), * represents a bond. As the divalent group consisting of two or more combinations, the groups (d-1) to (d-3) are preferred.

The divalent organic group may have a substituent. Examples of the substituent include linear, branched, or cyclic alkyl groups having 1 to 10 carbon atoms, such as methyl, ethyl, n-propyl, and n-butyl groups; halogen atoms such as fluorine, chlorine, and bromine; alkoxy groups having 1 to 10 carbon atoms, such as methoxy, ethoxy, and propoxy; hydroxyl groups; and halogen-substituted alkyl groups, such as trifluoromethyl groups. The above-mentioned substituents may further have a substituent (hereinafter sometimes referred to as "secondary substituents"). The substituents may be contained alone or in combination of two or more kinds. When the divalent organic group has a substituent, the substituent is preferably a hydroxyl group.

Specific examples of the component (1D) include triallyl isocyanurate, triallyl cyanurate, 1,3,5-triallylhexahydro-1,3,5-triazine, diallylpropyl isocyanurate, diallyl 1,4-cyclohexanedicarboxylate, 9,9-bis(4-allyloxyphenyl)fluorene, 2,2-bis(allyloxymethyl)-1-butanol, and the following compounds (D1) to (D3), etc. However, the component (1D) is not limited to these specific examples.

The (1D) component may be a commercially available product. Examples of commercially available products include "BANI-X" and "BANI-M" manufactured by Maruzen Petrochemical Co., Ltd., "DAD" manufactured by Nisshoku Techno Fine Chemical Co., Ltd., and "DPNG" manufactured by Kuraray Co., Ltd.

From the viewpoint of obtaining a significant effect of the present invention, the content of the (1D) component is preferably 0.1 parts by mass or more, more preferably 0.5 parts by mass or more, and even more preferably 1 part by mass or more, per 100 parts by mass of the (1A) component, and is preferably 20 parts by mass or less, more preferably 15 parts by mass or less, and even more preferably 10 parts by mass or less.

When the non-volatile components of the photosensitive resin composition are taken as 100% by mass, the content of the (1D) component is preferably 0.1% by mass or more, more preferably 0.13% by mass or more, even more preferably 0.15% by mass or more, 0.17% by mass or more, 0.2% by mass or more, and is preferably 15% by mass or less, more preferably 13% by mass or less, even more preferably 11% by mass or less, 10% by mass or less, from the viewpoint of obtaining a cured product with excellent via hole shape.

When the content of component (1A) when the non-volatile components of the photosensitive resin composition is taken as 100% by mass is a1, and the content of component (1D) when the non-volatile components of the photosensitive resin composition is taken as 100% by mass is d1, from the viewpoint of obtaining a significant effect of the present invention, a1/d1 is preferably 1 or more, more preferably 3 or more, and even more preferably 5 or more, and is preferably 600 or less, more preferably 100 or less, and even more preferably 500 or less, 400 or less, 300 or less, 200 or less, or 100 or less.

<(1E) Sensitizer>
The photosensitive resin composition may contain a sensitizer (1E) as an optional component. By containing the sensitizer (1E) in the photosensitive resin composition, it is possible to improve the photosensitivity of the photosensitive resin composition. The component (1E) may be used alone or in combination of two or more kinds. In addition, the component (1E) excludes those corresponding to the components (1A) to (1D).

The (1E) component can be a compound capable of improving the photosensitivity of the photosensitive resin composition. Examples of such compounds include benzophenones such as Michler's ketone, 4,4'-bis(diethylamino)benzophenone, and 4-morpholinobenzophenone; cyclic alkanes such as 2,5-bis(4'-diethylaminobenzal)cyclopentane, 2,6-bis(4'-diethylaminobenzal)cyclohexanone, and 2,6-bis(4'-diethylaminobenzal)-4-methylcyclohexanone; chalcones such as 4,4'-bis(dimethylamino)chalcone and 4,4'-bis(diethylamino)chalcone; p- Indanones such as dimethylaminocinnamylidene indanone and p-dimethylaminobenzylidene indanone; thiazoles such as 2-(p-dimethylaminophenylbiphenylene)-benzothiazole, 2-(p-dimethylaminophenylvinylene)benzothiazole, and 2-(p-dimethylaminophenylvinylene)isonaphthothiazole; acetones such as 1,3-bis(4'-dimethylaminobenzal)acetone and 1,3-bis(4'-diethylaminobenzal)acetone; coumarins such as 3-acetyl-7-dimethylaminocoumarin, 3-ethoxycarbonyl-7-dimethylaminocoumarin, 3-benzyloxycarbonyl-7-dimethylaminocoumarin, 3-methoxycarbonyl-7-diethylaminocoumarin, and 3-ethoxycarbonyl-7-diethylaminocoumarin; N-phenyl-N'-ethylethanolamine, N-phenyldiethanolamine, N-p-tolyldiethanolamine, N-phenylethanolamine, isoamyl dimethylaminobenzoate, diethyl amines such as isoamyl diaminobenzoate; heterocyclic compounds such as 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, 2-(p-dimethylaminostyryl)benzoxazole, 2-(p-dimethylaminostyryl)benzthiazole, 2-(p-dimethylaminostyryl)naphtho(1,2-d)thiazole, 1-phenyl-5-mercaptotetrazole, and 1-p-hydroxyphenyl-5-mercaptotetrazole; and styrenes such as 2-(p-dimethylaminobenzoyl)styrene.

（式（Ｄ－１）中、Ｒ^４１は、水素原子、炭素原子数１～７の直鎖状もしくは分岐状アルキル基、ハロゲン原子、ヒドロキシ基、メトキシ基、又はｔ－ブトキシ基を表す。） Among these, from the viewpoint of achieving remarkable effects of the present invention, the component (1E) is preferably a heterocyclic compound, and more preferably a compound represented by the following general formula (D-1).

(In formula (D-1), R ⁴¹ represents a hydrogen atom, a linear or branched alkyl group having 1 to 7 carbon atoms, a halogen atom, a hydroxy group, a methoxy group, or a t-butoxy group.)

R ⁴¹ represents a hydrogen atom, a linear or branched alkyl group having 1 to 7 carbon atoms, a halogen atom, a hydroxy group, a methoxy group, or a t-butoxy group. Examples of the linear or branched alkyl group having 1 to 7 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, and a t-butyl group. Among these, R ⁴¹ preferably represents a hydroxy group having an oxygen atom, a methoxy group, or a t-butoxy group, more preferably a hydrogen atom or a hydroxy group, and more preferably a hydrogen atom.

The bonding position of R ⁴¹ may be any of the ortho-position, meta-position, and para-position based on the site of the phenylene group bonding to the nitrogen atom of mercaptotetrazole, but the para-position is preferred from the viewpoint of significantly obtaining the effects of the present invention.

The compound represented by (D-1) is preferably either a compound represented by the following (D-2) or a compound represented by the following (D-3).

From the viewpoint of obtaining a significant effect of the present invention, the content of the (1E) component is preferably 0.1 parts by mass or more, more preferably 0.5 parts by mass or more, and even more preferably 1 part by mass or more, per 100 parts by mass of the (1A) component, and is preferably 20 parts by mass or less, more preferably 17 parts by mass or less, and even more preferably 15 parts by mass or less.

From the viewpoint of obtaining a significant effect of the present invention, the content of component (1E) is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, and even more preferably 1% by mass or more, when the non-volatile components of the photosensitive resin composition are taken as 100% by mass, and is preferably 20% by mass or less, more preferably 17% by mass or less, and even more preferably 15% by mass or less.

<(1F) Other Additives>
The photosensitive resin composition may further contain (1F) other additives to the extent that the object of the present invention is not hindered. (1F) other additives include, for example, adhesion aids; surfactants such as fluorine-based surfactants, nonionic surfactants, cationic surfactants, anionic surfactants, and silicone-based surfactants; thermoplastic resins; colorants such as phthalocyanine blue, phthalocyanine green, iodine green, diazo yellow, crystal violet, titanium oxide, carbon black, and naphthalene black; polymerization inhibitors such as hydroquinone, phenothiazine, methylhydroquinone, hydroquinone monomethyl ether, catechol, and pyrogallol; thickeners such as bentone and montmorillonite; silicone-based, fluorine-based, and vinyl resin-based defoamers; flame retardants such as epoxy resins, antimony compounds, phosphorus-based compounds, aromatic condensed phosphate esters, and halogen-containing condensed phosphate esters; and thermosetting resins such as phenol-based curing agents and cyanate ester-based curing agents.

<(1G) Solvent>
The photosensitive resin composition may contain a solvent (1G) as an optional component in combination with the non-volatile components such as the above-mentioned components (1A) to (1F). The solvent (1G) is a volatile component, and can be one that can uniformly dissolve at least one of the components (1A) to (1C) and the optional components (1D) to (1F). Examples of such a solvent include ether compounds having 2 to 9 carbon atoms, such as dimethyl ether, diethyl ether, methyl ethyl ether, tetrahydrofuran, dioxane, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, and triethylene glycol dimethyl ether; ketone compounds having 2 to 6 carbon atoms, such as acetone and methyl ethyl ketone; saturated hydrocarbon compounds having 5 to 10 carbon atoms, such as normal pentane, cyclopentane, normal hexane, cyclohexane, methylcyclohexane, and decalin; benzene, tetrahydrofuran, dioxane, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, and triethylene glycol dimethyl ether; Examples of the aromatic hydrocarbon compounds include aromatic hydrocarbon compounds having 6 to 10 carbon atoms, such as benzene, xylene, mesitylene, and tetralin; ester compounds having 3 to 9 carbon atoms, such as methyl acetate, ethyl acetate, γ-butyrolactone, and methyl benzoate; halogen-containing compounds having 1 to 10 carbon atoms, such as chloroform, methylene chloride, and 1,2-dichloroethane; nitrogen-containing compounds having 2 to 10 carbon atoms, such as acetonitrile, N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone; and sulfur-containing compounds such as dimethyl sulfoxide.

Examples of the (1G) component include N-ethyl-2-pyrrolidone, tetrahydrofuran, N,N-dimethylacetamide, dimethyl sulfoxide, hexamethylphosphoramide, pyridine, cyclopentanone, α-acetyl-γ-butyrolactone, tetramethylurea, 1,3-dimethyl-2-imidazolinone, N-cyclohexyl-2-pyrrolidone, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, methyl ethyl ketone, methyl isobutyl ketone, anisole, ethyl acetate, ethyl lactate, and butyl lactate. The (1G) component may be used alone or in combination of two or more.

The content of the (1G) component is preferably 10% by mass or more, more preferably 20% by mass or more, even more preferably 30% by mass or more, and preferably 99% by mass or less, more preferably 97% by mass or less, and even more preferably 95% by mass or less, when the entire photosensitive resin composition including the component (1G) is taken as 100% by mass. The content of the (1G) component in the photosensitive resin composition layer of the photosensitive film is preferably 1% by mass or more, more preferably 2% by mass or more, even more preferably 3% by mass or more, preferably 40% by mass or less, more preferably 35% by mass or less, and even more preferably 30% by mass or less, when the entire photosensitive resin composition including the component (1G) is taken as 100% by mass.

The photosensitive resin composition can be produced by mixing the above essential components (1A) to (1C) and the above optional components (1D) to (1G), and kneading or stirring the mixture as necessary using a kneading device such as a triple roll mill, ball mill, bead mill, or sand mill, or a stirring device such as a super mixer or planetary mixer.

[Photosensitive resin composition of the second embodiment]
The photosensitive resin composition of the second embodiment of the present invention contains (2A) a polyimide precursor, (2B) a crosslinking agent, (2C) a photoradical generator, and (2D) an allyl compound having an ethylenically unsaturated bond, the α-position of the ethylenically unsaturated bond being a group selected from a hydrocarbon group and a hydrogen atom, and at least one of the groups at the α-position of the ethylenically unsaturated bond being a hydrogen atom. By incorporating the components (2A) to (2D) in combination into the photosensitive resin composition, a cured product having good limit resolution and via hole shape and excellent dielectric properties can be obtained. In addition, the photosensitive resin composition of the second embodiment can usually obtain a cured product having excellent warpage.

The photosensitive resin composition of the second embodiment of the present invention is suitable as a negative-type photosensitive resin composition.

The photosensitive resin composition of the second embodiment may further contain optional components in combination with the components (2A) to (2D). Examples of optional components include a sensitizer (2E), other additives (2F), and a solvent (2G).

<(2A) Polyimide Precursor>
The photosensitive resin composition contains a polyimide precursor (2A) as the component (2A). By including the component (2A) in the photosensitive resin composition, a cured product having excellent dielectric properties can be obtained. The component (2A) may be used alone or in combination of two or more.

The (2A) component can be a resin having multiple amic acid structures and/or amic acid ester structures. Specifically, a compound obtained by reacting a tetracarboxylic dianhydride with a diamine compound can be used.

Among them, the (2A) component preferably has a radical reactive group from the viewpoint of obtaining a cured product having excellent limit resolution and excellent dielectric properties. Examples of the radical reactive group include a vinyl group, an allyl group, a propargyl group, a butenyl group, an ethynyl group, a phenylethynyl group, a maleimide group, a nadimide group, a (meth)acryloyl group, and a group represented by formula (A-2) described later, and the group represented by formula (A-2) is preferred. The "(meth)acryloyl group" includes a methacryloyl group, an acryloyl group, and a combination thereof. In addition, the (2A) component is preferably a polyimide precursor having an indane skeleton, more preferably a polyimide precursor having an indane skeleton and a radical reactive group, from the viewpoint of obtaining a cured product having excellent limit resolution and excellent dielectric properties. As the polyimide precursor having an indane skeleton, a compound having an indane skeleton and obtained by reacting a tetracarboxylic dianhydride with a diamine compound can be used. The indane skeleton represents a skeleton shown in formula (a1) below, and is preferably a trimethylindane skeleton shown in formula (a2) below.

Examples of tetracarboxylic acid dianhydrides include aliphatic tetracarboxylic acid dianhydrides and aromatic tetracarboxylic acid dianhydrides, with aliphatic tetracarboxylic acid dianhydrides being preferred. Examples of tetracarboxylic acid dianhydrides include 4,4'-oxydiphthalic acid dianhydride, 3,3',4,4'-benzophenone tetracarboxylic acid dianhydride, pyromellitic acid dianhydride, 3,4,9,10-perylene tetracarboxylic acid dianhydride, 3,3',4,4'-diphenylsulfone tetracarboxylic acid dianhydride, 3,3',4,4'-biphenyl tetracarboxylic acid dianhydride, 1,2,5,6-naphthalene tetracarboxylic acid dianhydride, 3,3',4 ,4'-para-terphenyltetracarboxylic dianhydride, 3,3',4,4'-meta-terphenyltetracarboxylic dianhydride, 1,2,4,5-cyclohexanetetracarboxylic dianhydride, bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride, bicyclo[2.2.1]heptane-2-endo-3-endo-5-exo-6-exo-2,3,5,6-tetracarboxylic dianhydride, bicyclo[2.2.1]heptane-2-endo-3-endo-5-exo-6-exo-2,3,5,6-tetracarboxylic dianhydride 2-exo-3-exo-5-exo-6-exo-2,3,5,6-tetracarboxylic dianhydride, bicyclo[2.2.1]heptane-2,3,5,6-tetracarboxylic dianhydride, decahydro-dimethanonaphthalene tetracarboxylic dianhydride, bis[2-(3-aminopropoxy)ethyl]ether, 1,4-butanediol-bis(3-aminopropyl)ether, 3,9-bis(3-aminopropyl)-2,4,8,10-tetracarboxylic dianhydride Examples include tetraspiro-5,5-undecane, 1,2-bis(2-aminoethoxy)ethane, 1,2-bis(3-aminopropoxy)ethane, triethylene glycol-bis(3-aminopropyl)ether, polyethylene glycol-bis(3-aminopropyl)ether, 3,9-bis(3-aminopropyl)-2,4,8,10-tetraspiro-5,5-undecane, and 1,4-butanediol-bis(3-aminopropyl)ether.

When the component (2A) is a polyimide precursor having an indane skeleton, for example, it is preferable to use a diamine having an indane skeleton as the diamine compound. Examples of the diamine having an indane skeleton include the diamines exemplified below.

（式中、Ａはそれぞれ独立に４価の有機基を表し、Ｂはそれぞれ独立に２価の有機基を表し、Ｒ^１及びＲ^２はそれぞれ独立に、水素原子又は１価の有機基を表す。ｎは５～２００の整数を表す。） From the viewpoint of obtaining a cured product that has excellent limiting resolution and excellent dielectric properties, the component (2A) preferably has a structural unit represented by the following formula (A-1).

(In the formula, each A independently represents a tetravalent organic group, each B independently represents a divalent organic group, ^R1 and ^R2 independently represent a hydrogen atom or a monovalent organic group, and n represents an integer of 5 to 200.)

In formula (A-1), A each independently represents a tetravalent organic group. The tetravalent organic group is preferably a tetravalent organic group having 6 to 40 carbon atoms. Examples of the tetravalent organic group having 6 to 40 carbon atoms include an aromatic group in which the -COOR ¹ group and the -COOR ² group and the -CONH- group are in the ortho position with respect to each other, or an alicyclic aliphatic group (R ¹ and R ² are the same as R ¹ and R ² in formula (A-1)). Examples of such groups include groups (i) to (ix). Among them, A is preferably a tetravalent organic group exemplified below, and more preferably a group (viii) or a group (ix). In the formula, * represents a bond.

In formula (A-1), each B independently represents a divalent organic group. The divalent organic group preferably has an aromatic ring, more preferably has a divalent organic group having an indane skeleton, and further preferably has an aromatic ring in addition to the indane skeleton. Examples of the divalent organic group include groups (1a) to (27a) exemplified below, of which groups (1a) to (7a) (divalent organic groups having an indane skeleton) are preferred, and group (7a) is more preferred. In the formula, * represents a bond.

（式中、Ｒ^４～Ｒ^６は、それぞれ独立に、水素原子又は炭素原子数１～３の脂肪族炭化水素基を表し、ｐは１～１０の整数を表す。） R ¹ and R ² in formula (A-1) each independently represent a hydrogen atom or a monovalent organic group. Examples of the monovalent organic group include a saturated aliphatic group having 1 to 4 carbon atoms; a reactive group that can be polymerized by a radical generated by heat or light, i.e., a radical reactive group, and the like, and the radical reactive group is preferable. The radical reactive group is as described above. It is preferable that at least one of R ¹ and R ² in formula (A-1) is independently a radical reactive group, and it is more preferable that both are radical reactive groups. As the radical reactive group, a group represented by the following formula (A-2) is preferable.

(In the formula, R ⁴ to R ⁶ each independently represent a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms, and p represents an integer of 1 to 10.)

R ⁴ to R ⁶ in formula (A-2) each independently represent a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms. Examples of the aliphatic hydrocarbon group having 1 to 3 carbon atoms include an alkyl group having 1 to 3 carbon atoms. Examples of the alkyl group having 1 to 3 carbon atoms include a methyl group, an ethyl group, an n-propyl group, and a 2-propyl group, and among these, a methyl group is preferable.

As the saturated aliphatic group having 1 to 4 carbon atoms, an alkyl group having 1 to 4 carbon atoms is preferable, and examples thereof include a methyl group, an ethyl group, an n-propyl group, a 2-propyl group, and an n-butyl group.

In formula (A-2), p represents an integer from 1 to 10, preferably an integer from 1 to 5, more preferably an integer from 1 to 3, and even more preferably 2.

In formula (A-1), at least one of R ¹ and R ² is preferably a radical reactive group, more preferably at least one of R 1 and R 2 is a group represented by formula (A-2), and further preferably both of R ¹ and R ² are groups represented by formula (A-2).

In formula (A-1), n represents an integer from 5 to 200, preferably an integer from 5 to 150, more preferably an integer from 5 to 100, and even more preferably an integer from 5 to 70.

（式中、Ａ１はそれぞれ独立に４価の有機基を表し、Ｒ^１１及びＲ^１２はそれぞれ独立に、水素原子又は１価の有機基を表し、Ｒ^１３はそれぞれ独立に、水素原子又はメチル基を表し、Ｘａはそれぞれ独立に、単結合、下記式（１）で表される基、又は式（２）で表される基を表し、Ｘｂはそれぞれ独立に、単結合、式（３）で表される基、又は式（４）で表される基を表す。ｍ１は１～５の整数を表し、ｎ１は５～２００の整数を表す。）

（式（１）～（４）中、＊は結合手を表す。） The component (2A) preferably has a structural unit represented by formula (A-3).

(In the formula, A1 each independently represents a tetravalent organic group, R ¹¹ and R ¹² each independently represent a hydrogen atom or a monovalent organic group, R ¹³ each independently represent a hydrogen atom or a methyl group, Xa each independently represent a single bond, a group represented by the following formula (1) or a group represented by formula (2), and Xb each independently represent a single bond, a group represented by formula (3) or a group represented by formula (4). m1 represents an integer of 1 to 5, and n1 represents an integer of 5 to 200.)

(In formulas (1) to (4), * represents a bond.)

Each A1 in formula (A-3) independently represents a tetravalent organic group, and A1 is the same as A in formula (A-1).

R ¹¹ and R ¹² in formula (A-3) each independently represent a hydrogen atom or a monovalent organic group and are the same as R ¹ and R ² in formula (A-1).

Each Xa independently represents a single bond, a group represented by formula (1), or a group represented by formula (2).

Examples of the group represented by formula (1) include a 1,2-phenylene group, a 1,3-phenylene group, and a 1,4-phenylene group.

Examples of the group represented by formula (2) include the following groups (2-1) to (2-6).

Among these, Xa is preferably a group represented by formula (2), and more preferably a group represented by formula (2-1).

Each Xb independently represents a single bond, a group represented by formula (3), or a group represented by formula (4).

Examples of the group represented by formula (3) include a 1,2-phenylene group, a 1,3-phenylene group, and a 1,4-phenylene group.

Examples of the group represented by formula (4) include the following groups.

Among these, Xb is preferably a group represented by formula (3), and more preferably a 1,4-phenylene group.

Each R ¹³ independently represents a hydrogen atom or a methyl group, and preferably represents a methyl group.

m1 represents an integer from 1 to 5, preferably an integer from 1 to 3, more preferably 2 or 3, and even more preferably 3.

n1 represents an integer from 5 to 200 and is the same as n in formula (A-1).

（式中、Ａ２はそれぞれ独立に４価の有機基を表し、Ｒ^２１又はＲ^２２は、それぞれ独立に水素原子又は下式（Ａ－５）で表される基を表す。ｎ２は５～２００の整数を表す。）

（式中、Ｒ^１４～Ｒ^１６は、それぞれ独立に、水素原子又は炭素原子数１～３の脂肪族炭化水素基を表し、ｐ１は１～１０の整数を表す。） The component (2A) preferably has a structural unit represented by the following (A-4).

(In the formula, A2 each independently represents a tetravalent organic group, R ²¹ and R ²² each independently represent a hydrogen atom or a group represented by the following formula (A-5), and n2 represents an integer of 5 to 200.)

(In the formula, R ¹⁴ to R ¹⁶ each independently represent a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms, and p1 represents an integer of 1 to 10.)

Each A2 in formula (A-4) independently represents a tetravalent organic group and is the same as A in formula (A-1).

R ²¹ and R ²² in formula (A-4) each independently represent a hydrogen atom or a group represented by formula (A-5), with the group represented by formula (A-5) being preferred. R ¹⁴ to R ¹⁶ in the group represented by formula (A-5) each independently represent a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms and are the same as R ⁴ to R ⁶ in the group represented by formula (A-2). p1 in the group represented by formula (A-5) represents an integer of 1 to 10 and is the same as p in the group represented by formula (A-2).

n2 represents an integer from 5 to 200 and is the same as n in formula (A-1).

The (2A) component may be a copolymer that contains a structural unit that does not contain an indane skeleton, in addition to a structural unit having an indane skeleton. For example, the (2A) component may contain a structural unit that does not contain an indane skeleton, in addition to a structural unit that contains an indane skeleton, as represented by formula (A-1).

Specific examples of the component (2A) include the following compounds (A1) to (A7). However, the component (2A) is not limited to these specific examples. In the formula, n is an integer of 5 to 200.

From the viewpoint of obtaining a significant effect of the present invention, the weight average molecular weight of the (2A) component is preferably 5,000 or more, more preferably 10,000 or more, and even more preferably 50,000 or more, and is preferably 1,000,000 or less, more preferably 500,000 or less, and even more preferably 200,000 or less. The weight average molecular weight of the resin can be measured as a polystyrene-equivalent value by gel permeation chromatography (GPC).

There are no particular limitations on the method for producing component (2A). Component (2A) can usually be obtained by reacting the above-mentioned tetracarboxylic dianhydride with a diamine compound. Component (2A) can be produced, for example, by the production method described in JP-A-2015-209461 or JP-A-2015-214680.

From the viewpoint of obtaining a significant effect of the present invention, the content of the (2A) component is preferably 10% by mass or more, more preferably 20% by mass or more, even more preferably 30% by mass or more, 40% by mass or more, 50% by mass or more, 60% by mass or more, 70% by mass or more, preferably 98% by mass or less, more preferably 97% by mass or less, and even more preferably 95% by mass or less, when the non-volatile components of the photosensitive resin composition are taken as 100% by mass. In the present invention, the content of each component in the photosensitive resin composition is the value when the non-volatile components in the photosensitive resin composition are taken as 100% by mass, unless otherwise specified.

<(2B) Crosslinking Agent>
The photosensitive resin composition contains a crosslinking agent (2B) as the component (2B). However, the component (2B) does not include those corresponding to the components (2A) and (2D). When the photosensitive resin composition is irradiated with active light and a radical is generated from the photoradical generator, a crosslinking reaction of the component (2B) occurs, and the composition becomes insoluble in the developer. Therefore, during development, the photosensitive resin composition can be selectively removed from areas other than those where the crosslinking reaction has progressed, and a negative pattern can be advantageously formed. The component (2B) may be used alone or in combination of two or more.

As the component (2B), a compound capable of causing a crosslinking reaction to proceed during development can be used. Such a compound is preferably a compound having an ethylenically unsaturated bond, and more preferably a compound having an ethylenically unsaturated bond and in which at least one of the carbon atoms at the α-position of the ethylenically unsaturated bond is bonded to a carbonyl group or an aromatic group.

The ethylenically unsaturated bond represents a carbon-carbon double bond. Therefore, the (2B) component may contain a group having an ethylenically unsaturated bond (hereinafter, referred to as "ethylenically unsaturated group" as appropriate). The ethylenically unsaturated group is usually a monovalent group, such as a vinyl group, an allyl group, a propargyl group, a butenyl group, an ethynyl group, a phenylethynyl group, a maleimide group, a nadimide group, or a (meth)acryloyl group. From the viewpoint of the reactivity of photoradical polymerization, the (meth)acryloyl group and the phenylethynyl group are preferred, and the (meth)acryloyl group is particularly preferred. The "(meth)acryloyl group" includes a methacryloyl group, an acryloyl group, and a combination thereof. The (2B) component contains an ethylenically unsaturated group, and therefore is capable of photoradical polymerization. However, in order to perform photoradical polymerization under general conditions, a compound having a carbonyl group or an aromatic group at at least one of the α positions of the ethylenically unsaturated bond is preferred. The number of ethylenically unsaturated groups per molecule of component (2B) is preferably 1 or more, more preferably 2 or more. Furthermore, when component (2B) contains two or more ethylenically unsaturated groups per molecule, those ethylenically unsaturated groups may be the same or different.

（式中、Ｒ^１ｂは、それぞれ独立に、水素原子、又は炭素原子数１～４の直鎖状もしくは分岐状アルキル基を表し、Ｚ^１ｂは、それぞれ独立に、酸素原子を含んでもよい炭素原子数１～２０の直鎖状もしくは分岐状のアルキレン基、酸素原子を含んでもよいアリーレン基、又は酸素原子を含んでもよい炭素原子数２～２０の直鎖状もしくは分岐状のアルケニレン基を表し、Ａ^１ｂは、炭素原子数１～１０の直鎖状、環状もしくは分岐状のｎｂ価の有機基を表す。ｎｂは２～６の正の整数を示す。） The component (2B) is preferably a compound represented by the following general formula (B-1).

(In the formula, R ^1b each independently represents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms; Z ^1b each independently represents a linear or branched alkylene group having 1 to 20 carbon atoms which may contain an oxygen atom, an arylene group which may contain an oxygen atom, or a linear or branched alkenylene group having 2 to 20 carbon atoms which may contain an oxygen atom; A ^1b represents a linear, cyclic or branched organic group having 1 to 10 carbon atoms and having a valence of nb, where nb represents a positive integer of 2 to 6.)

Each R ^1b independently represents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms. Examples of the linear or branched alkyl group having 1 to 4 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, a 1-butyl group, a s-butyl group, and a t-butyl group. Of these, a hydrogen atom or a methyl group is preferable as R ^1b .

Z ^1b each independently represents a linear or branched alkylene group having 1 to 20 carbon atoms which may contain an oxygen atom, an arylene group which may contain an oxygen atom, or a linear or branched alkenylene group having 2 to 20 carbon atoms which may contain an oxygen atom. As the linear or branched alkylene group having 1 to 20 carbon atoms, a linear or branched alkylene group having 1 to 10 carbon atoms is preferred, and a linear or branched alkylene group having 1 to 6 carbon atoms is more preferred. Examples of such alkylene groups include a methylene group, an ethylene group, a propylene group, a butylene group, a pentylene group, and a hexylene group, and a methylene group is preferred. The alkylene group may also be an oxyalkylene group containing an oxygen atom, and specific examples of such groups include, for example, those shown below. In the formula, "*" represents a bond, and a represents an integer of 1 to 23.

The arylene group which may contain an oxygen atom is preferably an arylene group having 6 to 20 carbon atoms, more preferably an arylene group having 6 to 15 carbon atoms, and even more preferably an arylene group having 6 to 10 carbon atoms. Examples of such an arylene group include a phenylene group and a naphthylene group. The arylene group may also contain an oxygen atom, and specific examples of such groups include those shown below. In the formula, "*" represents a bond, and a represents an integer of 1 to 23.

As the linear or branched alkenylene group having 2 to 20 carbon atoms which may contain an oxygen atom, a linear or branched alkenylene group having 2 to 10 carbon atoms is preferred, and a linear or branched alkenylene group having 2 to 6 carbon atoms is more preferred. Examples of such an alkenylene group include an ethenylene group, a propenylene group, a butenylene group, a pentenylene group, and a hexenylene group. The alkenylene group may also be an oxyalkenylene group containing an oxygen atom, and specific examples of such groups include those shown below. In the formula, "*" represents a bond, and a represents an integer of 1 to 23. The alkenylene group is preferably a propenylene group.

Among these, Z ^1b is preferably a linear or branched alkylene group having 1 to 20 carbon atoms which may contain an oxygen atom, and more preferably a methylene group.

A ^1b represents a linear, cyclic or branched nb-valent organic group having 1 to 10 carbon atoms. Examples of the nb-valent organic group include an nb-valent hydrocarbon group which may contain an oxygen atom, an nb-valent group derived from bisphenol, an nb-valent group derived from fluorene, an nb-valent group derived from tricyclodecane, or an nb-valent group derived from an isocyanuric group. Examples of the nb-valent hydrocarbon group which may contain an oxygen atom include an nb-valent aliphatic hydrocarbon group which may contain an oxygen atom, and an nb-valent aromatic hydrocarbon group which may contain an oxygen atom, and an nb-valent aliphatic hydrocarbon group which may contain an oxygen atom is preferred. Specific examples of the group represented by A ^1b include, for example, those shown below. In the formula, "*" represents a bond.

nb is a positive integer from 2 to 6, preferably a positive integer from 2 to 5, more preferably a positive integer from 2 to 4, and even more preferably 2 or 3.

（式中、Ｒ^２ｂは、それぞれ独立に水素原子、又はメチル基を表す。） The component (2B) is preferably a compound represented by the following general formula (B-2).

(In the formula, each R ^2b independently represents a hydrogen atom or a methyl group.)

R ^2b represents a hydrogen atom or a methyl group, and is preferably a methyl group.

Specific examples of the component (2B) include the following compounds (CL-1) to (CL-11), however, the component (2B) is not limited to these.

Component (2B) may be a commercially available product. Examples of commercially available products include NK Ester-D-TMP, 4G, 9G, 14G, 23G, and DCP manufactured by Shin-Nakamura Chemical Co., Ltd.

From the viewpoint of obtaining a significant effect of the present invention, the content of the (2B) component is preferably 1 part by mass or more, more preferably 2 parts by mass or more, and even more preferably 3 parts by mass or more, per 100 parts by mass of the (2A) component, and is preferably 25 parts by mass or less, more preferably 20 parts by mass or less, and even more preferably 15 parts by mass or less.

From the viewpoint of obtaining a significant effect of the present invention, the content of component (2B) is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, even more preferably 1% by mass or more, 2% by mass or more, 3% by mass or more, and is preferably 20% by mass or less, more preferably 18% by mass or less, even more preferably 15% by mass or less, when the non-volatile components of the photosensitive resin composition are taken as 100% by mass.

<(2C) Photoradical generator>
The photosensitive resin composition contains a photoradical generator (2C) as the component (2C). The component (2C) generates radicals when irradiated with actinic rays, and the portion of the photosensitive resin composition where a crosslinking reaction or the like has occurred due to the radicals does not dissolve in the developer. Therefore, during development, it becomes possible to selectively remove the photosensitive resin composition from the portion other than the portion where the crosslinking reaction has progressed, and a negative pattern can be advantageously formed. The component (2C) may be used alone or in combination of two or more. In addition, the component (2C) does not include those corresponding to the above-mentioned components (2A) to (2B) and the below-mentioned components (2D) to (2E).

(2C) components include benzophenone, o-benzoyl methyl benzoate, 4-benzoyl-4'-methyldiphenyl ketone, dibenzyl ketone, fluorenone and other benzophenone derivatives, 2,2'-diethoxyacetophenone, 2-hydroxy-2-methylpropiophenone, 1-hydroxycyclohexyl phenyl ketone and other acetophenone derivatives, thioxanthone, 2-methylthioxanthone, 2-isopropylthioxanthone, diethylthioxanthone and other thioxanthone derivatives; benzil, benzil dimethyl ketal, benzyl-β-methoxyethyl acetal and other benzyl derivatives; benzoin, benzoin methyl ether and other benzoin derivatives; 1-phenyl-1,2-butanedione-2-(o- methoxycarbonyl) oxime, 1-phenyl-1,2-propanedione-2-(o-methoxycarbonyl) oxime, 1-phenyl-1,2-propanedione-2-(o-ethoxycarbonyl) oxime, 1-phenyl-1,2-propanedione-2-(o-benzoyl) oxime, 1,3-diphenylpropanetrione-2-(o-ethoxycarbonyl) oxime, 1-phenyl-3-ethoxypropanetrione-2-(o-benzoyl) oxime and other oximes; N-arylglycines such as N-phenylglycine; peroxides such as benzoyl perchloride; aromatic biimidazoles; titanocenes; α-(n-octanesulfonyloxyimino)-4-methoxybenzyl cyanide; and the like. Among these, oximes are preferred as component (C) from the viewpoint of photosensitivity.

Component (2C) may be a commercially available product. Examples of commercially available products include "Irgacure-OXE02" and "Irgacure-OXE04" manufactured by BASF.

From the viewpoint of obtaining a significant effect of the present invention, the content of the (2C) component is preferably 0.1 parts by mass or more, more preferably 0.5 parts by mass or more, and even more preferably 1 part by mass or more, per 100 parts by mass of the (2A) component, and is preferably 20 parts by mass or less, more preferably 17 parts by mass or less, and even more preferably 15 parts by mass or less.

From the viewpoint of obtaining a significant effect of the present invention, the content of component (2C) is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, and even more preferably 1% by mass or more, when the non-volatile components of the photosensitive resin composition are taken as 100% by mass, and is preferably 20% by mass or less, more preferably 17% by mass or less, and even more preferably 15% by mass or less.

<(2D) Allyl Compound Having an Ethylenically Unsaturated Bond, in Which the Carbon Atom at the α-Position of the Ethylenically Unsaturated Bond is Bonded to a Group Selected from a Hydrocarbon Group and a Hydrogen Atom, and at Least One of the Groups Bonded to the Carbon Atom at the α-Position of the Ethylenically Unsaturated Bond is a Hydrogen Atom>
The photosensitive resin composition contains, as component (2D), an allyl compound having an ethylenically unsaturated bond, the carbon atom at the α-position of the ethylenically unsaturated bond being bonded to a group selected from a hydrocarbon group and a hydrogen atom, and at least one of the groups bonded to the carbon atom at the α-position of the ethylenically unsaturated bond being a hydrogen atom. Component (2D) excludes those corresponding to the above-mentioned components (2A) to (2C) and the below-mentioned component (2E). The carbon atom at the α-position of the ethylenically unsaturated bond is the first carbon atom adjacent to the carbon atom bonded by a carbon-carbon double bond, and specifically, for example, as shown in the following formula (d1), it indicates the carbon atom (C1 to C4) adjacent to the carbon atom bonded by a carbon-carbon double bond.

When the photosensitive resin composition is negative type, the exposed portion is usually less soluble in the developer due to the radical reaction. Therefore, the unexposed portion is removed by the developer, and only the exposed portion remains. The present inventors have found that if the radical reaction proceeds excessively, the radical reaction proceeds to the unexposed portion as well. The unexposed portion where the radical reaction has proceeded is not sufficiently cured because the amount of exposure is less than that of the exposed portion, but the solubility in the developer is reduced due to the progress of the radical reaction. Therefore, the unexposed portion where the radical reaction has proceeded dissolves slower in the developer than the unexposed portion. In addition, development is usually carried out from the mask side surface of the photosensitive resin composition layer. Therefore, in the unexposed portion where the radical reaction has proceeded during development, the portion near the mask side surface can be removed by development, while the portion near the surface opposite to the mask side (the via bottom) can remain without being removed by development. In this case, the via hole shape obtained by exposure and development is tapered with a larger diameter closer to the mask side surface and a smaller diameter closer to the via bottom. Conventionally, this has resulted in a deterioration in the shape of the via hole.
In contrast, in the present invention, the (2D) component functions as a chain transfer agent by the hydrogen atom bonded to the carbon atom at the α-position of the ethylenically unsaturated bond, and can control the radical reaction. Therefore, by including the (2D) component in the photosensitive resin composition, the radical reaction is controlled. As a result, it is possible to prevent the radical reaction from proceeding to the unexposed portion, and it is possible to obtain a cured product with a good via hole shape. Note that, since the (2E) component functions as a crosslinking agent when the carbon atom at the α-position of the ethylenically unsaturated bond is bonded to a carbonyl group or an aromatic group, the carbon atom at the α-position of the ethylenically unsaturated bond present in the molecule is not bonded to a carbonyl group or an aromatic group.

When the (2D) component has multiple ethylenically unsaturated bonds, it is sufficient that at least one of the multiple α-position carbon atoms is bonded to a hydrogen atom, and in this case, the other α-position carbon atoms may be bonded to groups other than carbonyl groups and aromatic groups. The (2D) component is preferably an allyl compound in which the α-position carbon atoms of the ethylenically unsaturated bonds are composed only of groups selected from hydrocarbon groups and hydrogen atoms, and at least one of the groups bonded to the α-position carbon atoms of the ethylenically unsaturated bonds is a hydrogen atom.

（式中、Ｒ^１ｄ、Ｒ^２ｄ、及びＲ^３ｄは、それぞれ独立に水素原子又は炭素数１～３の炭化水素基を表す。＊は結合手を表す。） The component (2D) is preferably represented by the following formula (D-1).

(In the formula, R ^1d , R ^2d , and R ^3d each independently represent a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms. * represents a bond.)

In formula (D-1), R ^1d , R ^2d , and R ^3d each independently represent a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms. Examples of the hydrocarbon group having 1 to 3 carbon atoms include an aliphatic hydrocarbon group having 1 to 3 carbon atoms. Examples of the aliphatic hydrocarbon group having 1 to 3 carbon atoms include a saturated aliphatic hydrocarbon group, such as an alkyl group having 1 to 3 carbon atoms. Examples of the alkyl group having 1 to 3 carbon atoms include a methyl group, an ethyl group, an n-propyl group, and an isopropyl group, and among these, a methyl group is preferred. R ^1d , R ^2d , and R ^3d are preferably a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, more preferably a hydrogen atom or a methyl group, and even more preferably a hydrogen atom.

The number of structures represented by formula (D-1) per molecule of the (2D) component is preferably 1 or more, more preferably 2 or more, and preferably 10 or less, more preferably 5 or less, and even more preferably 3 or less. The number of structures represented by formula (D-1) per molecule of the (2D) component is preferably 2 or 3, and more preferably 2. In addition, when the number of structures represented by formula (D-1) per molecule of the (2D) component is 2 or more, those structures represented by formula (D-1) may be the same or different.

（式中、Ｒ^１１ｄ、Ｒ^１２ｄ、Ｒ^１３ｄ、Ｒ^１４ｄ、Ｒ^１５ｄ及びＲ^１６ｄは、それぞれ独立に水素原子又は炭素数１～３の炭化水素基を表し、Ｚ^ｄは２価の有機基を表す。） The component (2D) is preferably a compound represented by the following formula (D-2).

(In the formula, R ^11d , R ^12d , R ^13d , R ^14d , R ^15d and R ^16d each independently represent a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms, and Z ^d represents a divalent organic group.)

R ^11d , R ^12d , R ^13d , R ^14d , R ^15d and R ^16d each independently represent a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms and are the same as R ^1d , R ^2d and R ^3d in formula (D-1).

^Zd represents a divalent organic group. Examples of the divalent organic group include a divalent aliphatic hydrocarbon group, a divalent aromatic hydrocarbon group, a divalent group containing a heteroatom, and a divalent group consisting of a combination of two or more of these. Examples of the heteroatom include an oxygen atom, a sulfur atom, a nitrogen atom, and a halogen atom.

The divalent aliphatic hydrocarbon group may be linear, branched, or cyclic. The divalent aliphatic hydrocarbon group may be saturated or unsaturated. The number of carbon atoms in the divalent aliphatic hydrocarbon group is preferably 1 to 10, more preferably 1 to 5. Examples of the divalent aliphatic hydrocarbon group include an alkylene group, an alkenylene group, and an alkynylene group. Examples of the alkylene group include a methylene group, an ethylene group, a propylene group, a butylene group, a pentylene group, and a hexylene group. Examples of the alkenylene group include an ethenylene group, a propenylene group, a butenylene group, a pentenylene group, and a hexenylene group. Examples of the alkynylene group include an ethynylene group, a propenylene group, and the like.

The number of carbon atoms in the divalent aromatic hydrocarbon group is preferably 6 to 20, and more preferably 6 to 15. Examples of the divalent aromatic hydrocarbon group include arylene groups, and examples of the arylene group include 1,2-phenylene groups, 1,3-phenylene groups, 1,4-phenylene groups, naphthylene groups, anthracenylene groups, biphenylene groups, and 9,9-diphenyl-9H-fluorenylene groups.

（＊は結合手を表す。） Examples of the divalent group containing a hetero atom include -O-, -S-, -NH-, -C(=O)-, -C(=O)-O-, -O-C(=O)-O-, -C(=O)-NH-, -S(=O) ₂ -, -S(=O) ₂ -O-, and the groups shown below.

(* represents a bond.)

Examples of the divalent group consisting of two or more combinations include a divalent aliphatic hydrocarbon group, a divalent aromatic hydrocarbon group, and a divalent group containing a heteroatom bonded thereto; a divalent aromatic hydrocarbon group and a divalent group containing a heteroatom bonded thereto; and a divalent aliphatic hydrocarbon group and a divalent group containing a heteroatom bonded thereto. Specific examples of the divalent group consisting of two or more combinations as described above include the following groups (d-1) to (d-6), but the present invention is not limited thereto. In the groups (d-1) to (d-6), * represents a bond. As the divalent group consisting of two or more combinations, the groups (d-1) to (d-3) are preferred.

The divalent organic group may have a substituent. Examples of the substituent include linear, branched, or cyclic alkyl groups having 1 to 10 carbon atoms, such as methyl, ethyl, n-propyl, and n-butyl groups; halogen atoms such as fluorine, chlorine, and bromine; alkoxy groups having 1 to 10 carbon atoms, such as methoxy, ethoxy, and propoxy; hydroxyl groups; and halogen-substituted alkyl groups, such as trifluoromethyl groups. The above-mentioned substituents may further have a substituent (hereinafter sometimes referred to as "secondary substituents"). The substituents may be contained alone or in combination of two or more kinds. When the divalent organic group has a substituent, the substituent is preferably a hydroxyl group.

Specific examples of the component (2D) include triallyl isocyanurate, triallyl cyanurate, 1,3,5-triallylhexahydro-1,3,5-triazine, diallylpropyl isocyanurate, diallyl 1,4-cyclohexanedicarboxylate, 9,9-bis(4-allyloxyphenyl)fluorene, 2,2-bis(allyloxymethyl)-1-butanol, and the following compounds (D1) to (D3), etc. However, the component (2D) is not limited to these specific examples.

The (2D) component may be a commercially available product. Examples of commercially available products include "BANI-X" and "BANI-M" manufactured by Maruzen Petrochemical Co., Ltd., "DAD" manufactured by Nisshoku Techno Fine Chemical Co., Ltd., and "DPNG" manufactured by Kuraray Co., Ltd.

From the viewpoint of obtaining a significant effect of the present invention, the content of the (2D) component is preferably 0.1 parts by mass or more, more preferably 0.5 parts by mass or more, and even more preferably 1 part by mass or more, per 100 parts by mass of the (2A) component, and is preferably 20 parts by mass or less, more preferably 15 parts by mass or less, and even more preferably 10 parts by mass or less.

When the non-volatile components of the photosensitive resin composition are taken as 100% by mass, the content of the (2D) component is preferably 0.1% by mass or more, more preferably 0.13% by mass or more, even more preferably 0.15% by mass or more, 0.17% by mass or more, or 0.2% by mass or more, and is preferably 15% by mass or less, more preferably 13% by mass or less, even more preferably 11% by mass or less, or 10% by mass or less, from the viewpoint of obtaining a cured product with excellent via hole shape.

When the content of component (2A) when the non-volatile components of the photosensitive resin composition is taken as 100% by mass is a1, and the content of component (2D) when the non-volatile components of the photosensitive resin composition is taken as 100% by mass is d1, from the viewpoint of obtaining a significant effect of the present invention, a1/d1 is preferably 1 or more, more preferably 3 or more, and even more preferably 5 or more, and is preferably 600 or less, more preferably 100 or less, and even more preferably 500 or less, 400 or less, 300 or less, 200 or less, or 100 or less.

<(2E) Sensitizer>
The photosensitive resin composition may contain a sensitizer (2E) as an optional component. By containing the sensitizer (2E) in the photosensitive resin composition, it is possible to improve the photosensitivity of the photosensitive resin composition. The component (2E) may be used alone or in combination of two or more kinds. In addition, the component (2E) does not include those corresponding to the above-mentioned components (2A) to (2D).

The (2E) component can be a compound capable of improving the photosensitivity of the photosensitive resin composition. Examples of such compounds include benzophenones such as Michler's ketone, 4,4'-bis(diethylamino)benzophenone, and 4-morpholinobenzophenone; cyclic alkanes such as 2,5-bis(4'-diethylaminobenzal)cyclopentane, 2,6-bis(4'-diethylaminobenzal)cyclohexanone, and 2,6-bis(4'-diethylaminobenzal)-4-methylcyclohexanone; chalcones such as 4,4'-bis(dimethylamino)chalcone and 4,4'-bis(diethylamino)chalcone; p- Indanones such as dimethylaminocinnamylidene indanone and p-dimethylaminobenzylidene indanone; thiazoles such as 2-(p-dimethylaminophenylbiphenylene)-benzothiazole, 2-(p-dimethylaminophenylvinylene)benzothiazole, and 2-(p-dimethylaminophenylvinylene)isonaphthothiazole; acetones such as 1,3-bis(4'-dimethylaminobenzal)acetone and 1,3-bis(4'-diethylaminobenzal)acetone; coumarins such as 3-acetyl-7-dimethylaminocoumarin, 3-ethoxycarbonyl-7-dimethylaminocoumarin, 3-benzyloxycarbonyl-7-dimethylaminocoumarin, 3-methoxycarbonyl-7-diethylaminocoumarin, and 3-ethoxycarbonyl-7-diethylaminocoumarin; N-phenyl-N'-ethylethanolamine, N-phenyldiethanolamine, N-p-tolyldiethanolamine, N-phenylethanolamine, isoamyl dimethylaminobenzoate, diethyl amines such as isoamyl diaminobenzoate; heterocyclic compounds such as 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, 2-(p-dimethylaminostyryl)benzoxazole, 2-(p-dimethylaminostyryl)benzthiazole, 2-(p-dimethylaminostyryl)naphtho(1,2-d)thiazole, 1-phenyl-5-mercaptotetrazole, and 1-p-hydroxyphenyl-5-mercaptotetrazole; and styrenes such as 2-(p-dimethylaminobenzoyl)styrene.

（式（Ｅ－１）中、Ｒ^１ｅは、水素原子、炭素原子数１～７の直鎖状もしくは分岐状アルキル基、ハロゲン原子、ヒドロキシ基、メトキシ基、又はｔ－ブトキシ基を表す。） Of these, from the viewpoint of achieving remarkable effects of the present invention, the component (2E) is preferably a heterocyclic compound, and more preferably a compound represented by the following general formula (E-1).

(In formula (E-1), R ^1e represents a hydrogen atom, a linear or branched alkyl group having 1 to 7 carbon atoms, a halogen atom, a hydroxy group, a methoxy group, or a t-butoxy group.)

R ^1e represents a hydrogen atom, a linear or branched alkyl group having 1 to 7 carbon atoms, a halogen atom, a hydroxy group, a methoxy group, or a t-butoxy group. Examples of the linear or branched alkyl group having 1 to 7 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, and a t-butyl group. Among these, R ^1e preferably represents a hydroxy group having an oxygen atom, a methoxy group, or a t-butoxy group, more preferably a hydrogen atom or a hydroxy group, and more preferably a hydrogen atom.

The bonding position of R ^1e may be any of the ortho-position, meta-position, and para-position based on the site of the phenylene group bonding to the nitrogen atom of mercaptotetrazole. From the viewpoint of significantly obtaining the effects of the present invention, the para-position is preferred.

The compound represented by (E-1) is preferably either a compound represented by the following (E-2) or a compound represented by the following (E-3).

From the viewpoint of obtaining a significant effect of the present invention, the content of the (2E) component is preferably 0.1 parts by mass or more, more preferably 0.5 parts by mass or more, and even more preferably 1 part by mass or more, per 100 parts by mass of the (2A) component, and is preferably 20 parts by mass or less, more preferably 15 parts by mass or less, and even more preferably 10 parts by mass or less.

From the viewpoint of obtaining a significant effect of the present invention, the content of the (2E) component is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, and even more preferably 1% by mass or more, when the non-volatile components of the photosensitive resin composition are taken as 100% by mass, and is preferably 20% by mass or less, more preferably 15% by mass or less, and even more preferably 10% by mass or less.

<(2F) Other Additives>
The photosensitive resin composition may further contain (2F) other additives to the extent that the object of the present invention is not impaired. (2F) Other additives are the same as (1F) other additives.

<(2G) Solvent>
The photosensitive resin composition may contain a solvent (2G) as an optional component in combination with the non-volatile components (2A) to (2F) described above. The solvent (2G) is the same as the solvent (1G).

The photosensitive resin composition can be produced by mixing the above-mentioned components (2A) to (2E) as essential components, appropriately mixing the above-mentioned components (2F) and (2G) as optional components, and kneading or stirring as necessary with kneading means such as a triple roll mill, ball mill, bead mill, or sand mill, or stirring means such as a super mixer or planetary mixer.

<Properties and Applications of the Photosensitive Resin Compositions of the First and Second Embodiments>
The photosensitive resin compositions of the first and second embodiments exhibit the characteristic of excellent limit resolution. For example, exposure and development are performed using a mask that draws round holes with an opening diameter of 10 μm, 15 μm, 20 μm, 25 μm, or 30 μm in the exposure pattern. In this case, the limit resolution, which is the minimum size that can be opened in the photosensitive resin composition of the first embodiment, is preferably less than 30 μm, more preferably 25 μm or less, even more preferably 20 μm or less, less than 20 μm, or 15 μm or less. The limit resolution, which is the minimum size that can be opened in the photosensitive resin composition of the second embodiment, is preferably less than 30 μm, more preferably 25 μm or less, even more preferably 20 μm or less, less than 20 μm, or 15 μm or less. The evaluation of the limit resolution can be measured according to the method described in the examples described below.

By using the photosensitive resin composition of the second embodiment, the shape of the via hole can be easily controlled. In addition, usually, by using the photosensitive resin composition of the first embodiment, the shape of the via hole can be easily controlled. Therefore, the formation of a via hole with a tapered cross section is suppressed. For example, a photosensitive resin composition layer provided on the surface of a substrate such as a silicon wafer is exposed and developed using a mask that draws round holes with an opening diameter of 10 μm, 15 μm, 20 μm, 25 μm, or 30 μm in the exposure pattern. The cross section of the via hole is observed, and the angle α between the surface of the substrate and the wall surface of the via hole is measured. In this case, the angle α is preferably 45° or more, more preferably 50° or more, and even more preferably 60° or more, and is preferably 95° or less, more preferably 93° or less, and even more preferably 90° or less. The evaluation of the via hole shape can be measured according to the method described in the examples described later.

The photosensitive resin compositions of the first and second embodiments are thermally cured at 250°C for 2 hours to produce cured products that exhibit a low dielectric constant (Dk). The dielectric constant at 23°C is preferably 5 or less, more preferably 4 or less, and even more preferably 3 or less. The lower limit is not particularly limited, but may be 1 or more. The dielectric constant can be measured according to the method described in the examples below.

The photosensitive resin compositions of the first and second embodiments are thermally cured at 250°C for 2 hours to produce cured products that exhibit a low dielectric loss tangent (Df). The dielectric loss tangent at 23°C is preferably 0.015 or less, more preferably 0.012 or less, and even more preferably 0.09 or less. The lower limit is not particularly limited, but may be 0.0001 or more. The dielectric loss tangent can be measured according to the method described in the examples below.

The cured product obtained by thermally curing the photosensitive resin composition of the first and second embodiments at 200°C for 120 minutes exhibits the characteristic of suppressing the amount of warping. The amount of warping of the cured product having a thickness of 30 μm is preferably less than 150 μm, more preferably 140 μm or less, and even more preferably 130 μm or less, or less than 130 μm. There is no particular lower limit, but it may be 0 μm or more, 1 μm or more, etc. The amount of warping can be measured by the method described in the examples below.

The photosensitive resin composition of the present invention can be used in a wide range of applications, including, but not limited to, photosensitive films, insulating resin sheets such as prepregs, silicon wafers, circuit boards (for laminates, multilayer printed wiring boards, etc.), solder resists, buffer coat films, underfill materials, die bonding materials, semiconductor encapsulants, hole-filling resins, and component-embedding resins. Among these, the photosensitive resin composition can be used in a wide range of applications, including, but not limited to, photosensitive resin compositions for insulating layers of printed wiring boards (printed wiring boards in which the cured product of the photosensitive resin composition is the insulating layer), photosensitive resin compositions for interlayer insulating layers (printed wiring boards in which the cured product of the photosensitive resin composition is the interlayer insulating layer), photosensitive resin compositions for plating (printed wiring boards in which plating is formed on the cured product of the photosensitive resin composition), and photosensitive resin compositions for solder resists (printed wiring boards in which the cured product of the photosensitive resin composition is the solder resist), photosensitive resin compositions for rewiring formation layers of wafer-level packages (wafer-level packages in which the cured product of the photosensitive resin composition is the rewiring formation layer), It can be suitably used as a photosensitive resin composition for a rewiring layer in a fan-out wafer-level package (a fan-out wafer-level package in which a cured product of a photosensitive resin composition is used as a rewiring layer), a photosensitive resin composition for a rewiring layer in a fan-out panel-level package (a fan-out panel-level package in which a cured product of a photosensitive resin composition is used as a rewiring layer), a photosensitive resin composition for a buffer coat (a semiconductor device in which a cured product of a photosensitive resin composition is used as a buffer coat), and a photosensitive resin composition for an insulating layer in a display (a display in which a cured product of a photosensitive resin composition is used as an insulating layer).

[Photosensitive film]
The photosensitive resin composition of the present invention can be applied to a photosensitive film. The photosensitive film can include a support and a photosensitive resin composition layer formed on the support. The photosensitive resin composition layer is a layer made of the above-mentioned photosensitive resin composition. The photosensitive film may also include a support, a photosensitive resin composition layer, and a protective film in this order.

Examples of the support include polyethylene terephthalate film, polyethylene naphthalate film, polypropylene film, polyethylene film, polyvinyl alcohol film, triacetyl acetate film, etc., with polyethylene terephthalate film being particularly preferred.

Examples of commercially available supports include, but are not limited to, Oji Paper's "Alphan MA-410" and "E-200C," Tamapoly's "GF-1" and "GF-8," polypropylene films manufactured by Shin-Etsu Film, and polyethylene terephthalate films such as the PS series manufactured by Teijin Ltd.'s "PS-25." To facilitate removal, it is preferable that these supports have a release agent, such as a silicone coating agent or a non-silicone coating agent, applied to the surface. Examples of supports whose surfaces have been treated with such release agents include "AL-5" manufactured by Lintec Corporation. The thickness of the support is preferably in the range of 5 μm to 100 μm, and more preferably in the range of 10 μm to 50 μm.

The thickness of the photosensitive resin composition layer is not particularly limited and can be, for example, 1 μm or more and 100 μm or less. In particular, it is preferably 2 μm or more, more preferably 4 μm or more, and is preferably 50 μm or less, more preferably 30 μm or less.

The photosensitive resin composition layer may be protected by a protective film. By protecting the photosensitive resin composition layer with a protective film, adhesion of dust and scratches to the surface of the photosensitive resin composition layer can be suppressed. As the protective film, for example, a film made of the same material as the above-mentioned support can be used. The thickness of the protective film is not particularly limited, but is preferably in the range of 1 μm to 40 μm, more preferably in the range of 5 μm to 30 μm, and even more preferably in the range of 10 μm to 30 μm. It is preferable that the adhesive strength between the photosensitive resin composition layer and the protective film is smaller than the adhesive strength between the photosensitive resin composition layer and the support.

The photosensitive film can be produced, for example, by applying the photosensitive resin composition onto a support and, if necessary, drying component (F).

[Semiconductor package substrate]
The semiconductor package substrate of the present invention includes an insulating layer formed from a cured product of the photosensitive resin composition of the present invention. The insulating layer is preferably used as a rewiring layer, an interlayer insulating layer, a buffer coat film, or a solder resist.

In detail, the semiconductor package substrate of the first embodiment of the present invention can be manufactured using the above-mentioned photosensitive resin composition, and the cured product of the photosensitive resin composition is used as an insulating layer.
(I) forming a photosensitive resin composition layer containing the photosensitive resin composition of the present invention on a circuit board;
(II) a step of irradiating the photosensitive resin composition layer with actinic rays; and (III) a step of developing the photosensitive resin composition layer.
Includes, in this order.

<Step (I)>
Methods for forming the photosensitive resin composition layer include a method in which a resin varnish containing the photosensitive resin composition is directly applied onto the circuit board, and a method in which the above-mentioned photosensitive film is used.

When the resin varnish containing the photosensitive resin composition is applied directly onto the circuit board, the (F) component is dried and volatilized to form a photosensitive resin composition layer on the circuit board.

Examples of resin varnish application methods include gravure coating, microgravure coating, reverse coating, kiss reverse coating, die coating, slot die, lip coating, comma coating, blade coating, roll coating, knife coating, curtain coating, chamber gravure coating, slot orifice, spin coating, slit coating, spray coating, dip coating, hot melt coating, bar coating, applicator, air knife coating, curtain flow coating, offset printing, brush coating, and full-surface printing using screen printing.

The resin varnish may be applied in several separate applications, or in one application, or a combination of different methods may be used. Of these, the die coating method is preferred, as it provides excellent uniformity of application. In addition, to avoid contamination by foreign matter, it is preferable to carry out the application process in an environment where foreign matter is unlikely to be generated, such as a clean room.

After the resin varnish is applied, it is dried in a hot air oven or far-infrared oven as necessary. Drying conditions are preferably 80°C to 120°C for 3 to 13 minutes. In this way, a photosensitive resin composition layer is formed on the circuit board.

Examples of circuit boards include glass epoxy boards, metal boards, polyester boards, polyimide boards, BT resin boards, and thermosetting polyphenylene ether boards. The term "circuit board" as used herein refers to a board in which a patterned conductor layer (circuit) is formed on one or both sides of a support board such as the above. In addition, in a multilayer printed wiring board formed by alternately laminating conductor layers and insulating layers, a board in which one or both sides of the outermost layer of the multilayer printed wiring board are patterned conductor layers (circuits) is also included in the circuit board referred to here. The surface of the conductor layer may be roughened in advance by blackening, copper etching, or the like.

On the other hand, when a photosensitive film is used, the photosensitive resin composition layer side is laminated to one or both sides of the circuit board using a vacuum laminator. In the lamination process, if the photosensitive film has a protective film, the protective film is removed, and the photosensitive film and circuit board are preheated as necessary, and the photosensitive resin composition layer is pressed and heated while being bonded to the circuit board. For photosensitive films, a method of laminating to the circuit board under reduced pressure using a vacuum lamination method is preferably used.

The lamination conditions are not particularly limited, but for example, the lamination temperature is preferably 70°C to 140°C, the lamination pressure is preferably 1 kgf/cm ² to 11 kgf/cm ² (9.8×10 ⁴ N/m ² to 107.9×10 ⁴ N/m ² ), the lamination time is preferably 5 seconds to 300 seconds, and the air pressure is preferably 20 mmHg (26.7 hPa) or less under reduced pressure. The lamination process may be a batch process or a continuous process using a roll. The vacuum lamination method can be performed using a commercially available vacuum laminator. Examples of commercially available vacuum laminators include a vacuum applicator manufactured by Nikko Materials Co., Ltd., a vacuum pressure laminator manufactured by Meiki Seisakusho Co., Ltd., a roll-type dry coater manufactured by Hitachi Industries Co., Ltd., and a vacuum laminator manufactured by Hitachi AIC Co., Ltd.

<Step (II)>
After the photosensitive resin composition layer is provided on the circuit board, an exposure step is then performed in which a predetermined portion of the photosensitive resin composition layer is irradiated with active light through a mask pattern. Examples of active light include ultraviolet light, visible light, electron beams, and X-rays, and ultraviolet light is particularly preferred. The amount of ultraviolet light is approximately 10 mJ/cm ² to 1000 mJ/cm ^2. There are two types of exposure method: a contact exposure method in which a mask pattern is brought into close contact with the circuit board, and a non-contact exposure method in which exposure is performed using parallel light without contact, and either method may be used.

In step (II), vias can be formed using a via pattern such as a round hole pattern as the mask pattern. The via diameter (opening diameter) is preferably 100 μm or less, more preferably 50 μm or less, and even more preferably 30 μm or less. There is no particular lower limit, but it can be 0.1 μm or more, 0.5 μm or more, etc.

<Step (III)>
After the exposure step, a development step is carried out in which the unexposed portions of the photosensitive resin composition layer are removed with a developer, thereby forming a pattern. The development is usually carried out by wet development.

In the case of the above-mentioned wet development, a developer that is safe, stable, and easy to operate, such as an alkaline solution, an aqueous developer, or an organic solvent, is used. In addition, as the development method, a known method such as spraying, rocking immersion, brushing, or scraping is appropriately used.

Examples of alkaline aqueous solutions used as the developer include aqueous solutions of alkali metal hydroxides such as lithium hydroxide, sodium hydroxide, and potassium hydroxide; carbonates or bicarbonates such as sodium carbonate and sodium bicarbonate; alkali metal phosphates such as sodium phosphate and potassium phosphate; and alkali metal pyrophosphates such as sodium pyrophosphate and potassium pyrophosphate; and aqueous solutions of organic bases that do not contain metal ions, such as tetraalkylammonium hydroxide. An aqueous solution of tetramethylammonium hydroxide (TMAH) is preferred because it does not contain metal ions and does not affect the semiconductor chip.

These alkaline aqueous solutions may contain a surfactant, an antifoaming agent, etc., to improve the development effect. The pH of the alkaline aqueous solution is, for example, preferably in the range of 8 to 12, and more preferably in the range of 9 to 11. The base concentration of the alkaline aqueous solution is preferably 0.1% by mass to 10% by mass. The temperature of the alkaline aqueous solution can be appropriately selected according to the developability of the photosensitive resin composition layer, but is preferably 20°C to 50°C.

Organic solvents used as developers include, for example, acetone, ethyl acetate, alkoxyethanols having an alkoxy group with 1 to 4 carbon atoms, ethyl alcohol, isopropyl alcohol, butyl alcohol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, cyclopentanone, and cyclohexanone.

The concentration of such an organic solvent is preferably 2% by mass to 90% by mass based on the total amount of the developer. The temperature of such an organic solvent can be adjusted according to the developability. Furthermore, such organic solvents can be used alone or in combination of two or more kinds. Examples of organic solvent-based developers used alone include 1,1,1-trichloroethane, N-methylpyrrolidone, N,N-dimethylformamide, cyclohexanone, methyl isobutyl ketone, and γ-butyrolactone.

When forming a pattern, two or more types of development methods may be used in combination, if necessary. Development methods include the dip method, the stroke method, the spray method, the high-pressure spray method, brushing, and slapping, and the high-pressure spray method is suitable for improving resolution. When using the spray method, the spray pressure is preferably 0.05 MPa to 0.3 MPa.

<Thermal curing (post-bake) process>
After the above step (III) is completed, a thermal curing (post-baking) step is performed as necessary. Although the curing of the photosensitive resin composition layer may proceed in the above steps (I) to (III), the curing of the photosensitive resin composition can be further promoted by the thermal curing step to obtain an insulating layer having excellent mechanical strength. Examples of the post-baking step include a heating step using a clean oven. The atmosphere during thermal curing may be in air or in an inert gas atmosphere such as nitrogen. The heating conditions may be appropriately selected depending on the type and content of the resin component in the photosensitive resin composition, and are preferably selected in the range of 150°C to 250°C for 20 minutes to 180 minutes, and more preferably in the range of 160°C to 230°C for 30 minutes to 120 minutes.

<Other processes>
The method for producing a semiconductor package substrate may further include a drilling step and a desmearing step after forming an insulating layer as a cured photosensitive resin composition layer. These steps may be carried out according to various methods used in the production of semiconductor package substrates and known to those skilled in the art.

After forming the insulating layer, if desired, a drilling process is performed on the insulating layer formed on the circuit board to form via holes and through holes. The drilling process can be performed by known methods such as drilling, laser, plasma, etc., or by combining these methods as necessary, but a drilling process using a laser such as a carbon dioxide laser or YAG laser is preferred.

The desmear process is a process of performing a desmear treatment. Generally, resin residue (smear) adheres to the inside of the opening formed in the drilling process. Since such smears can cause poor electrical connections, a process to remove the smear (desmear treatment) is performed in this process.

The desmearing process may be performed by a dry desmearing process, a wet desmearing process, or a combination of these.

An example of a dry desmear process is a desmear process using plasma. A desmear process using plasma can be performed using a commercially available plasma desmear process. Among commercially available plasma desmear process devices, examples suitable for use in manufacturing semiconductor package substrates include a microwave plasma device manufactured by Nissin Co., Ltd. and an atmospheric pressure plasma etching device manufactured by Sekisui Chemical Co., Ltd.

As the wet desmear treatment, for example, a desmear treatment using an oxidizing agent solution can be mentioned. When performing the desmear treatment using an oxidizing agent solution, it is preferable to perform the swelling treatment using a swelling liquid, the oxidation treatment using an oxidizing agent solution, and the neutralization treatment using a neutralizing liquid in this order. As the swelling liquid, for example, "Swelling Dip Securigans P" and "Swelling Dip Securigans SBU" manufactured by Atotech Japan can be mentioned. The swelling treatment is preferably performed by immersing the substrate on which the via holes and the like are formed in the swelling liquid heated to 60°C to 80°C for 5 to 10 minutes. As the oxidizing agent solution, an alkaline permanganate solution is preferable, and for example, a solution in which potassium permanganate or sodium permanganate is dissolved in an aqueous solution of sodium hydroxide can be mentioned. The oxidation treatment using the oxidizing agent solution is preferably performed by immersing the substrate after the swelling treatment in the oxidizing agent solution heated to 60°C to 80°C for 10 to 30 minutes. Commercially available alkaline permanganate aqueous solutions include, for example, "Concentrate Compact CP" and "Dosing Solution Securiganth P" manufactured by Atotech Japan. The neutralization treatment using a neutralizing solution is preferably carried out by immersing the substrate after the oxidation treatment in the neutralizing solution at 30°C to 50°C for 3 to 10 minutes. The neutralizing solution is preferably an acidic aqueous solution, and a commercially available product is, for example, "Reduction Solution Securiganth P" manufactured by Atotech Japan.

When dry desmear treatment and wet desmear treatment are performed in combination, the dry desmear treatment may be performed first, or the wet desmear treatment may be performed first.

Whether the insulating layer is formed as a redistribution layer, an interlayer insulating layer, or a solder resist, a drilling process and a desmearing process may be performed after the thermal curing process. In addition, in the manufacturing method of the semiconductor package substrate, a plating process may be further performed.

The plating process is a process of forming a conductor layer on an insulating layer. The conductor layer may be formed by sputtering after the insulating layer is formed, or may be formed by a combination of electroless plating and electrolytic plating. Alternatively, a plating resist having a reverse pattern to the conductor layer may be formed, and the conductor layer may be formed only by electroless plating. Subsequent pattern formation methods that can be used include, for example, subtractive methods and semi-additive methods known to those skilled in the art.

The semiconductor package substrate according to the second embodiment of the present invention can be manufactured using the above-mentioned photosensitive resin composition, and the cured product of the photosensitive resin composition is used as a rewiring formation layer. Specifically, the manufacturing method of the semiconductor package substrate includes:
(A) a step of laminating a temporary fixing film on a substrate;
(B) a step of temporarily fixing a semiconductor chip on a temporary fixing film;
(C) forming an encapsulation layer on the semiconductor chip;
(D) peeling the substrate and the temporary fixing film from the semiconductor chip;
(E) a step of forming a rewiring formation layer as an insulating layer on the surface of the semiconductor chip from which the base material and the temporary fixing film have been peeled off;
(F) forming a redistribution layer as a conductor layer on the redistribution layer; and
(G) forming a solder resist layer on the rewiring layer;
The method for manufacturing the semiconductor chip package further comprises:
(H) dicing the plurality of semiconductor chip packages into individual semiconductor chip packages;
may also include

<Step (A)>
Step (A) is a step of laminating a temporary fixing film on a substrate. The lamination conditions of the substrate and the temporary fixing film are not particularly limited, but for example, it is preferable to perform lamination under reduced pressure with a pressure bonding temperature (lamination temperature) of preferably 70°C to 140°C, a pressure bonding pressure of preferably 1 kgf/cm ² to 11 kgf/cm ² , a pressure bonding time of preferably 5 seconds to 300 seconds, and an air pressure of 20 mmHg or less. The lamination step may be a batch type or a continuous type using a roll. The vacuum lamination method can be performed using a commercially available vacuum laminator. Examples of commercially available vacuum laminators include a vacuum applicator manufactured by Nikko Materials Co., Ltd., a vacuum pressure laminator manufactured by Meiki Seisakusho Co., Ltd., a roll type dry coater manufactured by Hitachi Industries Co., Ltd., and a vacuum laminator manufactured by Hitachi AIC Co., Ltd.

Examples of substrates include silicon wafers; glass wafers; glass substrates; metal substrates such as copper, titanium, stainless steel, and cold-rolled steel plate (SPCC); substrates such as FR-4 substrates in which glass fibers are impregnated with epoxy resin or the like and then heat-cured; and substrates made of bismaleimide triazine resins such as BT resin.

The temporary fixing film can be made of any material that can be peeled off from the semiconductor chip and can temporarily fix the semiconductor chip. Commercially available products include "Riva Alpha" manufactured by Nitto Denko Corporation.

<Step (B)>
Step (B) is a step of temporarily fixing the semiconductor chip on the temporary fixing film. The temporary fixing of the semiconductor chip can be performed using, for example, a device such as a flip chip bonder or a die bonder. The layout and number of the semiconductor chips can be appropriately set depending on the shape and size of the temporary fixing film, the number of semiconductor packages to be produced, etc. For example, the semiconductor chips may be temporarily fixed by arranging them in a matrix shape of multiple rows and multiple columns.

<Step (C)>
Step (C) is a step of forming an encapsulating layer on the semiconductor chip. The encapsulating layer can be made of any material having insulating properties, and the above-mentioned photosensitive resin composition can be used. The encapsulating layer is usually formed by a method including a step of forming an encapsulating resin composition layer on the semiconductor chip and a step of thermally curing the resin composition layer to form the encapsulating layer.

The encapsulating resin composition layer is preferably formed by compression molding. In compression molding, the semiconductor chip and the encapsulating resin composition are typically placed in a mold, and pressure and, if necessary, heat are applied to the encapsulating resin composition in the mold to form an encapsulating resin composition layer that covers the semiconductor chip.

Specific operations of the compression molding method can be, for example, as follows. An upper mold and a lower mold are prepared as molds for compression molding. In addition, an encapsulating resin composition is applied to the semiconductor chip that has been temporarily fixed on the temporary fixing film as described above. The semiconductor chip to which the encapsulating resin composition has been applied is attached to the lower mold together with the substrate and the temporary fixing film. Thereafter, the upper mold and the lower mold are clamped together, and heat and pressure are applied to the encapsulating resin composition to perform compression molding.

Specific operations of the compression molding method may be, for example, as follows. An upper mold and a lower mold are prepared as molds for compression molding. An encapsulating resin composition is placed on the lower mold. A semiconductor chip is attached to the upper mold together with a substrate and a temporary fixing film. The upper and lower molds are then clamped together so that the encapsulating resin composition placed on the lower mold is in contact with the semiconductor chip attached to the upper mold, and heat and pressure are applied to perform compression molding.

The molding conditions vary depending on the composition of the encapsulating resin composition, and appropriate conditions can be adopted so that good encapsulation is achieved. For example, the temperature of the mold during molding is preferably a temperature at which the encapsulating resin composition can exhibit excellent compression moldability, and is preferably 80°C or higher, more preferably 100°C or higher, particularly preferably 120°C or higher, and preferably 200°C or lower, more preferably 170°C or lower, and particularly preferably 150°C or lower. The pressure applied during molding is preferably 1 MPa or higher, more preferably 3 MPa or higher, particularly preferably 5 MPa or higher, and preferably 50 MPa or lower, more preferably 30 MPa or lower, and particularly preferably 20 MPa or lower. The cure time is preferably 1 minute or higher, more preferably 2 minutes or higher, particularly preferably 5 minutes or higher, and preferably 60 minutes or lower, more preferably 30 minutes or lower, and particularly preferably 20 minutes or lower. Usually, the mold is removed after the encapsulating resin composition layer is formed. The mold may be removed before or after the encapsulating resin composition layer is thermally cured.

The compression molding method may be performed by discharging the encapsulating resin composition filled in a cartridge into a lower mold.

<Step (D)>
Step (D) is a step of peeling off the substrate and the temporary fixing film from the semiconductor chip. It is desirable to adopt an appropriate peeling method according to the material of the temporary fixing film. For example, the peeling method may be a method of heating, foaming or expanding the temporary fixing film to peel it off. In addition, for example, the peeling method may be a method of irradiating the temporary fixing film with ultraviolet light through the substrate to reduce the adhesive strength of the temporary fixing film to peel it off.

In the method of peeling off the temporary fixing film by heating, foaming or expanding it, the heating conditions are usually 100° C. to 250° C. for 1 second to 90 seconds or 5 minutes to 15 minutes. In the method of peeling off the temporary fixing film by reducing the adhesive strength of the temporary fixing film by irradiating it with ultraviolet light, the irradiation amount of ultraviolet light is usually 10 mJ/cm ² to 1000 mJ/cm ² .

<Step (E)>
Step (E) is a step of forming a rewiring formation layer as an insulating layer on the surface of the semiconductor chip from which the base material and the temporary fixing film have been peeled off. The rewiring formation layer uses the photosensitive resin composition of the present invention. The method for forming the rewiring formation layer is the same as the method for forming the photosensitive resin composition layer in step (I) in the first embodiment.

When forming the redistribution layer, via holes may be formed in the redistribution layer to provide interlayer connection between the semiconductor chip and the redistribution layer.

The via hole can be formed by carrying out an exposure process in which the surface of the photosensitive resin composition layer for forming the rewiring formation layer is irradiated with active light through a mask pattern, and a development process in which the non-exposed portion not irradiated with active light is developed and removed. The amount and duration of exposure of the active light can be appropriately set according to the photosensitive resin composition layer. Examples of the exposure method include a contact exposure method in which a mask pattern is brought into close contact with the photosensitive resin composition layer and exposed, and a non-contact exposure method in which a mask pattern is not brought into close contact with the photosensitive resin composition layer and exposed using parallel light. The active light, alkaline aqueous solution, and exposure and development methods are as described above.

The shape of the via hole is not particularly limited, but is generally circular (approximately circular). The top diameter of the via hole is preferably 50 μm or less, more preferably 30 μm or less, and even more preferably 20 μm or less, and is preferably 0.1 μm or more, preferably 0.5 μm or more, and more preferably 1.0 μm or more. Here, the top diameter of the via hole refers to the diameter of the opening of the via hole on the surface of the rewiring formation layer.

<Step (F)>
Step (F) is a step of forming a redistribution layer as a conductor layer on the redistribution formation layer. The method of forming the redistribution layer on the redistribution formation layer may be the same as the method of forming a conductor layer on an insulating layer in the first embodiment. Steps (E) and (F) may be repeated to alternately stack (build up) the redistribution layers and the redistribution formation layers.

<Step (G)>
Step (G) is a step of forming a solder resist layer on the rewiring layer. The material of the solder resist layer can be any material having insulating properties. Among them, photosensitive resins and thermosetting resins are preferred from the viewpoint of ease of manufacturing the semiconductor chip package. The photosensitive resin composition of the present invention may also be used.

In step (G), bumping processing may be performed to form bumps, if necessary. The bumping processing may be performed using a solder ball, solder plating, or the like. In addition, the formation of via holes in the bumping processing may be performed in the same manner as in step (E).

The method for manufacturing a semiconductor chip package may include step (H) in addition to steps (A) to (G). Step (H) is a step of dicing a plurality of semiconductor chip packages into individual semiconductor chip packages to separate them. There is no particular limitation on the method for dicing the semiconductor chip packages into individual semiconductor chip packages.

[Semiconductor device]
Examples of semiconductor devices in which the above-mentioned semiconductor chip package is mounted include various semiconductor devices used in electrical products (e.g., computers, mobile phones, smartphones, tablet devices, wearable devices, digital cameras, medical equipment, televisions, etc.) and vehicles (e.g., motorcycles, automobiles, trains, ships, aircraft, etc.).

The present invention will be described in more detail below using examples, but the present invention is not limited to these examples. In the following description, unless otherwise specified, "parts" and "%" mean "parts by mass" and "% by mass", respectively.

Synthesis Example 1: Synthesis of Polyimide Precursor A-1
29.4 g of 3,3',4,4'-biphenyltetracarboxylic dianhydride (sBPDA) was placed in a 2 L separable flask, and then 500 mL of N-methyl-2-pyrrolidone was placed in the 2 L separable flask and stirred at room temperature. Furthermore, 45.0 g of 5-(4-aminophenoxy)-3-[4-(4-aminophenoxy)phenyl]-1,1,3-trimethylindan (INDAN) was added to the separable flask, and at the same time, the separable flask was heated in an oil bath until the internal temperature reached 40°C, and polymerization was carried out for 20 hours.

Next, 1.12 g of potassium hydroxide was added to the reaction solution and stirred at room temperature, and 8.8 g of ethylene carbonate was added. At the same time, the separable flask was heated in an oil bath until the internal temperature reached 80°C, and stirred for 10 hours. The resulting reaction solution was brought to 40°C, and 18.1 g of acrylic acid chloride, 0.5 g of dimethylaminopyridine, and 20 g of triethylamine were added and stirred for 3 hours.

Next, the obtained reaction solution was dropped into 6 L of ultrapure water to precipitate a polymer. The precipitated polymer was filtered and then dried under heating at 80° C. in a vacuum dryer to obtain 71 g of polyimide precursor A-1. The weight average molecular weight of polyimide precursor A-1 was measured by gel permeation chromatography (standard polystyrene equivalent) to find that the weight average molecular weight (Mw) was 50,000. The structural formula of polyimide precursor A-1 is shown below (n represents an integer of 5 to 200).

<Synthesis Example 2: Synthesis of Polyimide Precursor A-2>
29.4 g of 3,3',4,4'-biphenyltetracarboxylic dianhydride (sBPDA) was placed in a 2 L separable flask, and then 500 mL of N-methyl-2-pyrrolidone was placed in the separable flask and stirred at room temperature. 45.0 g of 5-(4-aminophenoxy)-3-[4-(4-aminophenoxy)phenyl]-1,1,3-trimethylindan (INDAN) was added to the separable flask, and the separable flask was heated in an oil bath until the internal temperature reached 40°C, and polymerization was carried out for 20 hours.

Next, 1.12 g of potassium hydroxide was added to the reaction solution and stirred at room temperature, then 8.8 g of ethylene carbonate was added, and at the same time, the separable flask was heated in an oil bath until the internal temperature reached 80°C, and stirred for 10 hours. The resulting reaction solution was brought to 40°C, and 20.6 g of methacrylic acid chloride, 0.5 g of dimethylaminopyridine, and 20 g of triethylamine were added and stirred for 3 hours.

Next, the obtained reaction solution was dropped into 6 L of ultrapure water to precipitate a polymer. The precipitated polymer was filtered and then dried under heating at 80° C. in a vacuum dryer to obtain 70 g of polyimide precursor A-2. The weight average molecular weight of polyimide precursor A-2 was measured by gel permeation chromatography (standard polystyrene equivalent) and found to be 52,000 (Mw). The structural formula of polyimide precursor A-2 is shown below (n is an integer of 5 to 200).

Synthesis Example 3: Synthesis of Polyimide Precursor A-3
51.8 g of 2,2-bis[4-(3,4-dicarboxyphenoxy)phenyl]propane dianhydride (BPADA) was placed in a 2 L separable flask, and then 500 mL of N-methyl-2-pyrrolidone was placed in the separable flask and stirred at room temperature. Furthermore, 45.0 g of 5-(4-aminophenoxy)-3-[4-(4-aminophenoxy)phenyl]-1,1,3-trimethylindan (INDAN) was added to the separable flask, and at the same time, the separable flask was heated in an oil bath until the internal temperature reached 40° C., and polymerization was carried out for 20 hours.

Next, 1.12 g of potassium hydroxide was added to the reaction solution and stirred at room temperature, then 8.8 g of ethylene carbonate was added, and at the same time, the separable flask was heated in an oil bath until the internal temperature reached 80°C, and stirred for 10 hours. The resulting reaction solution was brought to 40°C, and 18.1 g of acrylic acid chloride, 0.5 g of dimethylaminopyridine, and 20 g of triethylamine were added, and stirred for 3 hours.

Next, the obtained reaction solution was dropped into 6 L of ultrapure water to precipitate a polymer. The precipitated polymer was filtered and then dried under heating at 80° C. in a vacuum dryer to obtain 90 g of polyimide precursor A-3. The weight average molecular weight of polyimide precursor A-3 was measured by gel permeation chromatography (standard polystyrene equivalent) and found to be 40,000 (Mw). The structural formula of polyimide precursor A-3 is shown below (n is an integer of 5 to 200).

<Synthesis Example 4: Synthesis of Polyimide Precursor A-4>
51.8 g of 2,2-bis[4-(3,4-dicarboxyphenoxy)phenyl]propane dianhydride (BPADA) was placed in a 2 L separable flask, and then 500 mL of N-methyl-2-pyrrolidone was placed in the separable flask and stirred at room temperature. 45.0 g of 5-(4-aminophenoxy)-3-[4-(4-aminophenoxy)phenyl]-1,1,3-trimethylindan (INDAN) was added, and the separable flask was heated in an oil bath until the internal temperature reached 40° C., and polymerization was carried out for 20 hours.

Next, 1.12 g of potassium hydroxide was added to the reaction solution and stirred at room temperature, then 8.8 g of ethylene carbonate was added, and at the same time, the separable flask was heated in an oil bath until the internal temperature reached 80°C, and stirred for 10 hours. The resulting reaction solution was brought to 40°C, and 20.6 g of methacrylic acid chloride, 0.5 g of dimethylaminopyridine, and 20 g of triethylamine were added and stirred for 3 hours.

Next, the obtained reaction solution was dropped into 6 L of ultrapure water to precipitate a polymer. The precipitated polymer was filtered and then dried under heating at 80° C. in a vacuum dryer to obtain 92 g of Polyimide Precursor A-4. The weight average molecular weight of Polyimide Precursor A-4 was measured by gel permeation chromatography (standard polystyrene equivalent) and found to be 42,000 (Mw). The structural formula of Polyimide Precursor A-4 is shown below (n is an integer of 5 to 200).

<Synthesis Example 5: Synthesis of Polyimide Precursor A-5>
51.8 g of 2,2-bis[4-(3,4-dicarboxyphenoxy)phenyl]propane dianhydride (BPADA) was placed in a 2 L separable flask, and then 500 mL of N-methyl-2-pyrrolidone was placed in the separable flask and stirred at room temperature. 22.5 g of 5-(4-aminophenoxy)-3-[4-(4-aminophenoxy)phenyl]-1,1,3-trimethylindan (INDAN) and 5.4 g of p-phenylenediamine (PDA) were added, and the separable flask was heated in an oil bath until the internal temperature reached 40°C, and polymerization was carried out for 20 hours.

Next, 1.12 g of potassium hydroxide was added to the reaction solution and stirred at room temperature, then 8.8 g of ethylene carbonate was added, and at the same time, the separable flask was heated in an oil bath until the internal temperature reached 80°C and stirred for 10 hours. The resulting reaction solution was brought to 40°C, and 18.1 g of acrylic acid chloride, 0.5 g of dimethylaminopyridine, and 20 g of triethylamine were added and stirred for 3 hours.

Next, the obtained reaction solution was dropped into 6 L of ultrapure water to precipitate a polymer. The precipitated polymer was filtered and then dried under heating at 80° C. in a vacuum dryer to obtain 90 g of Polyimide Precursor A-5. The molecular weight of Polyimide Precursor A-5 was measured by gel permeation chromatography (standard polystyrene equivalent) to find that the weight average molecular weight (Mw) was 45,000.

<Synthesis Example 6: (A) Synthesis of Polyimide Precursor A-6>
29.4 g of 3,3',4,4'-biphenyltetracarboxylic dianhydride (sBPDA) was placed in a 2 L separable flask, 500 mL of N-methyl-2-pyrrolidone was added, and the mixture was stirred at room temperature. 10.8 g of p-phenylenediamine (PDA) was then added, and the reaction vessel was heated in an oil bath until the internal temperature reached 40°C, and polymerization was carried out for 20 hours.

Next, 1.12 g of potassium hydroxide was added to the reaction solution and stirred at room temperature, then 8.8 g of ethylene carbonate was added, and at the same time, the reaction vessel was heated in an oil bath until the internal temperature reached 80°C, and stirred for 10 hours. The resulting reaction solution was brought to 40°C, and 18.1 g of acrylic acid chloride, 0.5 g of dimethylaminopyridine, and 20 g of triethylamine were added, and stirred for 3 hours.

Next, the obtained reaction solution was dropped into 6 L of ultrapure water to precipitate the polymer, thereby purifying it. The purified polymer was filtered off and then dried under heating at 80° C. in a vacuum dryer to obtain 30 g of polymer A-6. The molecular weight of polyimide precursor A-6 was measured by gel permeation chromatography (standard polystyrene equivalent) to find that the weight average molecular weight (Mw) was 50,000.

<Synthesis Example 7: Synthesis of Polyimide Precursor A-7>
29.4 g of 3,3',4,4'-biphenyltetracarboxylic dianhydride (sBPDA) was placed in a 2 L separable flask, and then 500 mL of N-methyl-2-pyrrolidone was added and stirred at room temperature. 20.0 g of 4,4'-diaminophenyl ether (ODA) was then added, and the separable flask was heated in an oil bath until the internal temperature reached 40°C, and polymerization was carried out for 20 hours.

Next, 1.12 g of potassium hydroxide was added to the reaction solution and stirred at room temperature, then 8.8 g of ethylene carbonate was added, and at the same time, the separable flask was heated in an oil bath until the internal temperature reached 80°C and stirred for 10 hours. The resulting reaction solution was brought to 40°C, and 18.1 g of acrylic acid chloride, 0.5 g of dimethylaminopyridine, and 20 g of triethylamine were added and stirred for 3 hours.

Next, the obtained reaction solution was dropped into 6 L of ultrapure water to precipitate a polymer. The precipitated polymer was filtered and then dried under heating at 80° C. in a vacuum dryer to obtain 45 g of Polyimide Precursor A-7. The molecular weight of Polyimide Precursor A-7 was measured by gel permeation chromatography (standard polystyrene equivalent) to find that the weight average molecular weight (Mw) was 50,000.

<Preparation of Negative Photosensitive Resin Compositions (Examples a-1 to a-5, b-1 to b-6, Comparative Examples c-1 to c-2)>
Each photosensitive resin composition was prepared by dissolving each component in 280 parts by mass of a solvent, γ-butyrolactone (GBL), according to the blending amounts (units: parts by mass) in the table below. In the table, the contents of component (A) and component (D) represent the contents when the non-volatile components of the photosensitive resin composition are taken as 100% by mass.

・Ｃ－１：下記式で表される化合物（Ｉｒｇａｃｕｒｅ－ＯＸＥ０２、ＢＡＳＦ社製）

・Ｄ－１：下記式で表される化合物（ＢＡＮＩ－Ｘ、丸善石油化学社製）

・Ｄ－２：下記式で表される化合物（ＤＡＤ、日蝕テクノファインケミカル社製）

・Ｄ－３：下記式で表される化合物（ＤＰＮＧ、クラレ社製）

・Ｅ－１：下記式で表される化合物

The abbreviations in the table are as follows:
B-1: A compound represented by the following formula:

C-1: Compound represented by the following formula (Irgacure-OXE02, manufactured by BASF)

D-1: A compound represented by the following formula (BANI-X, manufactured by Maruzen Petrochemical Co., Ltd.)

D-2: Compound represented by the following formula (DAD, manufactured by Nisshoku Technofine Chemical Co., Ltd.)

D-3: A compound represented by the following formula (DPNG, manufactured by Kuraray Co., Ltd.)

E-1: A compound represented by the following formula:

<Evaluation of limiting resolution and via hole shape>
A copper plating layer was laminated on the surface of a silicon wafer to a thickness of 10 μm, and the substrate was subjected to a phobic treatment with a 1% hydrochloric acid aqueous solution for 10 seconds. Each photosensitive resin composition was then applied onto the substrate using a spin coater at a rotation speed appropriate for a film thickness of 15 μm, and the coating was heated on a hot plate at 120° C. for 5 minutes to form a photosensitive resin composition layer. This is called a laminate.

The laminate produced by the above method was exposed to ultraviolet light (wavelength 365 nm, intensity 40 mW/cm ² ). The exposure dose was set to an optimal value in the range of 50 mJ/cm ² to 1000 mJ/cm ² . For the exposure pattern, a quartz glass mask was used to draw circular holes (via holes) with openings of 10 μm, 15 μm, 20 μm, 25 μm, and 30 μm.

Next, the entire surface of the photosensitive resin composition layer on the laminate was spray-developed with cyclopentanone as a developer at a spray pressure of 0.2 MPa for an optimal time between 30 and 200 seconds, followed by spray rinsing with 2-methoxy-1-methylethyl acetate (PGMEA) at a spray pressure of 0.2 MPa for 30 seconds. The photosensitive resin composition layer was then cured by heat treatment at 200°C for 120 minutes.

The diameters of the bottoms of the via holes with openings of 10 μm, 15 μm, 20 μm, 25 μm, and 30 μm in the exposure pattern were observed by SEM (magnification 1000 times) and measured. The minimum size that can be opened was defined as the limiting resolution. The limiting resolution was evaluated according to the following criteria.
◯: Limiting resolution is less than 20 μm △: Limiting resolution is 20 μm or more and less than 30 μm ×: Limiting resolution is 30 μm or more

The shape of the via hole was evaluated by observing the cross section of the via hole and measuring the angle α between the surface of the silicon wafer and the wall surface of the via hole.
○: 60°≦α≦95
△: 45°≦α<60°
×: 45°＞α, or α＞95°

<Measurement of dielectric properties (dielectric constant, dielectric tangent)>
The dielectric properties were measured by coating the photosensitive resin composition on a peel-treated PET film with a blade to a film thickness of 140 μm. The solution on the PET was heated at 80° C. for 20 minutes using a heater to form a photosensitive film having a photosensitive resin composition layer. The photosensitive resin composition layer was peeled off from the PET film, and the photosensitive resin composition layer was attached to a metal frame using heat-resistant tape, and cured for an additional 2 hours at 250° C. to prepare a film for measuring physical properties.

A test piece measuring 2 mm in width and 80 mm in length was cut from the film for measuring physical properties. The dielectric constant and dielectric loss tangent of the cut test piece were measured at a measurement frequency of 5.8 GHz and a measurement temperature of 23°C by the cavity resonance perturbation method using an Agilent Technologies HP8362B measuring device.

<Warpage evaluation (warpage test)>
The photosensitive resin compositions produced in the examples and comparative examples were applied onto a 12-inch silicon wafer at a rotation speed suitable for a film thickness of 30 μm using a spin coater, and then heated on a hot plate at 120° C. for 5 minutes to form a photosensitive resin composition layer. Thereafter, exposure was performed with ultraviolet light (wavelength 365 nm, intensity 40 mW/cm ² ). The exposure amount was set to 1000 mJ/cm ² . The exposure was performed on the front surface of the photosensitive resin layer through quartz glass. Further, a heat treatment was performed at 200° C. for 120 minutes to harden the photosensitive resin composition layer. This resulted in a sample substrate including a silicon wafer and a cured layer of the photosensitive resin composition. The amount of warping of the sample substrate at 25° C. was measured using a shadow moire measuring device ("Thermoire AXP" manufactured by Akorometrix). The measurement was performed in accordance with the Japan Electronics and Information Technology Industries Association standard, JEITA EDX-7311-24. Specifically, a virtual plane calculated by the least squares method for all data on the substrate surface in the measurement area was used as a reference plane, and the difference between the minimum and maximum values in the vertical direction from the reference plane was calculated as the amount of warpage. The amount of warpage was evaluated according to the following criteria.
◯: Warpage is less than 130 μm △: Warpage is 130 μm or more and less than 150 μm ×: Warpage is 150 μm or more

Claims (20)

(1A) a polyimide precursor having an indane skeleton,
(1B) a crosslinking agent, and (1C) a photoradical generator,
Contains
The component (1A) is a photosensitive resin composition having a structural unit represented by the following formula (A-3):

(In the formula, A1 each independently represents a tetravalent organic group, R ¹¹ and R ¹² each independently represent a hydrogen atom or a monovalent organic group, R ¹³ each independently represent a methyl group, Xa represents a group represented by formula (2) bonded to the 3-position of indan , and Xb represents a group represented by formula (4) bonded to the 5-position of indan . m1 represents an integer of 3 , and n1 represents an integer of 5 to 200.)

(In the formula, * represents a bond, and the bond and the oxygen atom are bonded at the para position .) The photosensitive resin composition according to claim 1 further contains (1D) an allyl compound having an ethylenically unsaturated bond, the carbon atom at the α-position of the ethylenically unsaturated bond being bonded to a group selected from a hydrocarbon group and a hydrogen atom, and at least one of the groups bonded to the carbon atom at the α-position of the ethylenically unsaturated bond is a hydrogen atom. The photosensitive resin composition according to claim 2, wherein the component (1D) is represented by the following formula (D-1):

(In the formula, R ^1d , R ^2d , and R ^3d each independently represent a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms. * represents a bond.) The photosensitive resin composition according to claim 2 or 3, wherein the component (1D) is represented by the following formula (D-2):

(In the formula, R ^11d , R ^12d , R ^13d , R ^14d , R ^15d and R ^16d each independently represent a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms, and Z ^d represents a divalent organic group.) The photosensitive resin composition according to any one of claims 1 to 4, further comprising (1E) a sensitizer. The photosensitive resin composition according to any one of claims 1 to 5, wherein R ¹¹ and R ¹² in formula (A-3) each independently represent a hydrogen atom or a radically reactive group. The photosensitive resin composition according to any one of claims 1 to 6, wherein R ¹¹ and R ¹² in formula (A-3) each independently represent a hydrogen atom or a radical reactive group represented by the following formula (A-2):

(In the formula, R ⁴ to R ⁶ each independently represent a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms, and p represents an integer of 1 to 10.) The photosensitive resin composition according to any one of claims 1 to 7, wherein the component (1A) has a structural unit represented by the following formula (A-4):

(In the formula, A2 each independently represents a tetravalent organic group, R ²¹ and R ²² each independently represent a hydrogen atom or a group represented by the following formula (A-5), and n2 represents an integer of 5 to 200.)

(In the formula, R ¹⁴ to R ¹⁶ each independently represent a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms, and p1 represents an integer of 1 to 10.) The photosensitive resin composition according to any one of claims 1 to 8, wherein the weight average molecular weight of component (1A) is 5,000 or more and 1,000,000 or less. (2A) a polyimide precursor,
(2B) a crosslinking agent,
(2C) a photoradical generator; and (2D) an allyl compound having an ethylenically unsaturated bond, in which the carbon atom at the α-position of the ethylenically unsaturated bond is bonded to a group selected from a hydrocarbon group and a hydrogen atom, and at least one of the groups bonded to the carbon atom at the α-position of the ethylenically unsaturated bond is a hydrogen atom.
Contains
The component (2A) has a structural unit represented by the following formula (A-3):
The component (2D) is a photosensitive resin composition represented by the following formula (D-2):

(In the formula, A1 each independently represents a tetravalent organic group, R ¹¹ and R ¹² each independently represent a hydrogen atom or a monovalent organic group, R ¹³ each independently represent a hydrogen atom or a methyl group, Xa each independently represent a single bond, a group represented by the following formula (1) or a group represented by formula (2), and Xb each independently represent a single bond, a group represented by formula (3) or a group represented by formula (4). m1 represents an integer of 1 to 5, and n1 represents an integer of 5 to 200.)

(In the formula, * represents a bond.)

(In the formula, R ^11d , R ^12d , R ^13d , R ^14d , R ^15d and R ^16d each independently represent a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms, and Z ^d represents a divalent organic group represented by any one of the following formulas (d-1) to (d-3) .)

The photosensitive resin composition according to claim 10, wherein at least one of R ¹¹ and R ¹² in formula (A-3) is independently a radical reactive group. The photosensitive resin composition according to claim 11, wherein the radical reactive group is represented by the following formula (A-2):

(In the formula, R ⁴ to R ⁶ each independently represent a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms, and p represents an integer of 1 to 10.) The photosensitive resin composition according to any one of claims 10 to 12, wherein component (2B) is a compound having an ethylenically unsaturated bond, and at least one of the carbon atoms at the α-position of the ethylenically unsaturated bond is bonded to a carbonyl group or an aromatic group. The photosensitive resin composition according to any one of claims 10 to 13, further comprising a sensitizer (2E). The photosensitive resin composition according to any one of claims 10 to 14, wherein the content of component (2D) is 0.1% by mass or more and 15% by mass or less, when the non-volatile components of the photosensitive resin composition are taken as 100% by mass. The photosensitive resin composition according to any one of claims 10 to 15, wherein the content of component (2A) is 70% by mass or more and 98% by mass or less, when the non-volatile components of the photosensitive resin composition are taken as 100% by mass. A photosensitive film having a photosensitive resin composition layer formed on a support, the photosensitive resin composition being composed of the photosensitive resin composition according to any one of claims 1 to 16. A semiconductor package substrate comprising an insulating layer formed from a cured product of the photosensitive resin composition according to any one of claims 1 to 16. A semiconductor device including the semiconductor package substrate according to claim 18. A step of forming a photosensitive resin composition layer containing the photosensitive resin composition according to any one of claims 1 to 16 on a circuit board;
A step of irradiating the photosensitive resin composition layer with actinic rays;
and developing the photosensitive resin composition layer.