JP7601633B2 - Manufacturing method for flexible substrate - Google Patents
Manufacturing method for flexible substrate Download PDFInfo
- Publication number
- JP7601633B2 JP7601633B2 JP2020219088A JP2020219088A JP7601633B2 JP 7601633 B2 JP7601633 B2 JP 7601633B2 JP 2020219088 A JP2020219088 A JP 2020219088A JP 2020219088 A JP2020219088 A JP 2020219088A JP 7601633 B2 JP7601633 B2 JP 7601633B2
- Authority
- JP
- Japan
- Prior art keywords
- copper plating
- electroless copper
- plating film
- electroless
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 title claims description 80
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 191
- 238000007747 plating Methods 0.000 claims description 160
- 229910052802 copper Inorganic materials 0.000 claims description 154
- 239000010949 copper Substances 0.000 claims description 154
- 239000011889 copper foil Substances 0.000 claims description 37
- 239000011347 resin Substances 0.000 claims description 36
- 229920005989 resin Polymers 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 29
- -1 nitrogen-containing aromatic compound Chemical class 0.000 claims description 24
- 150000002816 nickel compounds Chemical class 0.000 claims description 17
- 239000005749 Copper compound Substances 0.000 claims description 11
- 239000003638 chemical reducing agent Substances 0.000 claims description 10
- 150000001880 copper compounds Chemical class 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 4
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 claims description 4
- 150000005041 phenanthrolines Chemical class 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000007547 defect Effects 0.000 description 13
- 239000008139 complexing agent Substances 0.000 description 11
- 229920001721 polyimide Polymers 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 5
- 150000003863 ammonium salts Chemical class 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 159000000001 potassium salts Chemical class 0.000 description 5
- 159000000000 sodium salts Chemical class 0.000 description 5
- 239000004094 surface-active agent Substances 0.000 description 5
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 4
- 239000003002 pH adjusting agent Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 239000003381 stabilizer Substances 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 2
- OTMYLOBWDNFTLO-UHFFFAOYSA-N 5,6-diphenyl-3-(2-pyridyl)-1,2,4-triazine Chemical compound C1=CC=CC=C1C1=NN=C(C=2N=CC=CC=2)N=C1C1=CC=CC=C1 OTMYLOBWDNFTLO-UHFFFAOYSA-N 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 235000019253 formic acid Nutrition 0.000 description 2
- HHLFWLYXYJOTON-UHFFFAOYSA-N glyoxylic acid Chemical compound OC(=O)C=O HHLFWLYXYJOTON-UHFFFAOYSA-N 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- CPRMKOQKXYSDML-UHFFFAOYSA-M rubidium hydroxide Chemical compound [OH-].[Rb+] CPRMKOQKXYSDML-UHFFFAOYSA-M 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XRLUJVFOGKUSMQ-ZVGUSBNCSA-L (2r,3r)-2,3-dihydroxybutanedioate;nickel(2+) Chemical compound [Ni+2].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O XRLUJVFOGKUSMQ-ZVGUSBNCSA-L 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- 150000000183 1,3-benzoxazoles Chemical class 0.000 description 1
- BFIAIMMAHAIVFT-UHFFFAOYSA-N 1-[bis(2-hydroxybutyl)amino]butan-2-ol Chemical compound CCC(O)CN(CC(O)CC)CC(O)CC BFIAIMMAHAIVFT-UHFFFAOYSA-N 0.000 description 1
- KJUGUADJHNHALS-UHFFFAOYSA-N 1H-tetrazole Substances C=1N=NNN=1 KJUGUADJHNHALS-UHFFFAOYSA-N 0.000 description 1
- HVCVRVKEIKXBIF-UHFFFAOYSA-N 2,9-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=C(C=CC=2C3=NC(=CC=2)C=2C=CC=CC=2)C3=N1 HVCVRVKEIKXBIF-UHFFFAOYSA-N 0.000 description 1
- MFGOFGRYDNHJTA-UHFFFAOYSA-N 2-amino-1-(2-fluorophenyl)ethanol Chemical compound NCC(O)C1=CC=CC=C1F MFGOFGRYDNHJTA-UHFFFAOYSA-N 0.000 description 1
- UPPLJLAHMKABPR-UHFFFAOYSA-H 2-hydroxypropane-1,2,3-tricarboxylate;nickel(2+) Chemical compound [Ni+2].[Ni+2].[Ni+2].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O UPPLJLAHMKABPR-UHFFFAOYSA-H 0.000 description 1
- WPTCSQBWLUUYDV-UHFFFAOYSA-N 2-quinolin-2-ylquinoline Chemical group C1=CC=CC2=NC(C3=NC4=CC=CC=C4C=C3)=CC=C21 WPTCSQBWLUUYDV-UHFFFAOYSA-N 0.000 description 1
- NBPGPQJFYXNFKN-UHFFFAOYSA-N 4-methyl-2-(4-methylpyridin-2-yl)pyridine Chemical group CC1=CC=NC(C=2N=CC=C(C)C=2)=C1 NBPGPQJFYXNFKN-UHFFFAOYSA-N 0.000 description 1
- MDBXMHMXXXURAL-UHFFFAOYSA-N 5,6-dimethyl-1,2,4-triazine Chemical compound CC1=NC=NN=C1C MDBXMHMXXXURAL-UHFFFAOYSA-N 0.000 description 1
- PDXLGJOCPOWFAC-UHFFFAOYSA-N 5,6-dimethyl-2,3-dipyridin-2-ylquinoxaline Chemical compound C=1C=CC=NC=1C1=NC2=C(C)C(C)=CC=C2N=C1C1=CC=CC=N1 PDXLGJOCPOWFAC-UHFFFAOYSA-N 0.000 description 1
- VNAIZJHCLJUOML-UHFFFAOYSA-N 6,7-diethyl-2,3-dipyridin-2-ylquinoxaline Chemical compound CCC1=C(CC)C=C2N=C(C3=NC=CC=C3)C(C3=NC=CC=C3)=NC2=C1 VNAIZJHCLJUOML-UHFFFAOYSA-N 0.000 description 1
- NACXMBPTPBZQHY-UHFFFAOYSA-N 6,7-dimethyl-2,3-dipyridin-2-ylquinoxaline Chemical compound C=1C=CC=NC=1C=1N=C2C=C(C)C(C)=CC2=NC=1C1=CC=CC=N1 NACXMBPTPBZQHY-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical group N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- OCUCCJIRFHNWBP-IYEMJOQQSA-L Copper gluconate Chemical compound [Cu+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O OCUCCJIRFHNWBP-IYEMJOQQSA-L 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- QXNVGIXVLWOKEQ-UHFFFAOYSA-N Disodium Chemical class [Na][Na] QXNVGIXVLWOKEQ-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Natural products P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- ITBPIKUGMIZTJR-UHFFFAOYSA-N [bis(hydroxymethyl)amino]methanol Chemical compound OCN(CO)CO ITBPIKUGMIZTJR-UHFFFAOYSA-N 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
- 229940111121 antirheumatic drug quinolines Drugs 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 150000007514 bases Chemical group 0.000 description 1
- 150000001556 benzimidazoles Chemical class 0.000 description 1
- 150000001565 benzotriazoles Chemical class 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- KKAXNAVSOBXHTE-UHFFFAOYSA-N boranamine Chemical class NB KKAXNAVSOBXHTE-UHFFFAOYSA-N 0.000 description 1
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- NWEKXBVHVALDOL-UHFFFAOYSA-N butylazanium;hydroxide Chemical compound [OH-].CCCC[NH3+] NWEKXBVHVALDOL-UHFFFAOYSA-N 0.000 description 1
- HUCVOHYBFXVBRW-UHFFFAOYSA-M caesium hydroxide Inorganic materials [OH-].[Cs+] HUCVOHYBFXVBRW-UHFFFAOYSA-M 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229940108925 copper gluconate Drugs 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- RSJOBNMOMQFPKQ-UHFFFAOYSA-L copper;2,3-dihydroxybutanedioate Chemical compound [Cu+2].[O-]C(=O)C(O)C(O)C([O-])=O RSJOBNMOMQFPKQ-UHFFFAOYSA-L 0.000 description 1
- FWBOFUGDKHMVPI-UHFFFAOYSA-K dicopper;2-oxidopropane-1,2,3-tricarboxylate Chemical compound [Cu+2].[Cu+2].[O-]C(=O)CC([O-])(C([O-])=O)CC([O-])=O FWBOFUGDKHMVPI-UHFFFAOYSA-K 0.000 description 1
- IFQUWYZCAGRUJN-UHFFFAOYSA-N ethylenediaminediacetic acid Chemical compound OC(=O)CNCCNCC(O)=O IFQUWYZCAGRUJN-UHFFFAOYSA-N 0.000 description 1
- 150000004675 formic acid derivatives Chemical class 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 150000004676 glycans Chemical class 0.000 description 1
- 125000001487 glyoxylate group Chemical class O=C([O-])C(=O)[*] 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000002563 ionic surfactant Substances 0.000 description 1
- 150000002537 isoquinolines Chemical class 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 150000002762 monocarboxylic acid derivatives Chemical group 0.000 description 1
- 150000002780 morpholines Chemical class 0.000 description 1
- IYRGXJIJGHOCFS-UHFFFAOYSA-N neocuproine Chemical compound C1=C(C)N=C2C3=NC(C)=CC=C3C=CC2=C1 IYRGXJIJGHOCFS-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 229940116232 nickel gluconate Drugs 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- DVQYNXRSNFYQRW-IYEMJOQQSA-L nickel(2+);(2r,3s,4r,5r)-2,3,4,5,6-pentahydroxyhexanoate Chemical compound [Ni+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O DVQYNXRSNFYQRW-IYEMJOQQSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 150000002916 oxazoles Chemical class 0.000 description 1
- 229920002866 paraformaldehyde Polymers 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 150000004885 piperazines Chemical class 0.000 description 1
- 150000003053 piperidines Chemical class 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920001282 polysaccharide Polymers 0.000 description 1
- 239000005017 polysaccharide Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- 150000003230 pyrimidines Chemical class 0.000 description 1
- 150000003235 pyrrolidines Chemical group 0.000 description 1
- 150000003248 quinolines Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 235000000346 sugar Nutrition 0.000 description 1
- 150000008163 sugars Chemical class 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
- C23C18/1641—Organic substrates, e.g. resin, plastic
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
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- Other Surface Treatments For Metallic Materials (AREA)
Description
本発明はフレキシブル配線基板の前駆体であるフレキシブル基板の製造方法に関する発明である。 The present invention relates to a method for manufacturing a flexible substrate, which is a precursor to a flexible wiring substrate.
フレキシブル配線基板は柔軟性を有し、電子機器内の三次元配線や可動部配線が可能となるため、携帯型端末、液晶テレビ、ノート型パソコン、デジタルカメラなどの各種電子機器で使用されている。フレキシブル配線基板は、導電層が基材に形成されたフレキシブル基板(前駆体)に配線パターンを形成して作製される。フレキシブル基板は各種公知の方法によって製造されているが、接続信頼性を高めるために様々な改良技術が提案されている。 Flexible wiring boards are flexible and allow for three-dimensional wiring and movable wiring within electronic devices, so they are used in a variety of electronic devices, including mobile terminals, LCD televisions, notebook computers, and digital cameras. Flexible wiring boards are produced by forming a wiring pattern on a flexible substrate (precursor) that has a conductive layer formed on a base material. Flexible substrates are produced by a variety of known methods, and various improvement techniques have been proposed to increase connection reliability.
例えば特許文献1には、第二銅塩、還元剤、少なくとも2種類の錯化剤、安定剤を含む青銅めっき液、及び該めっき液を用いたフレキシブル基板の製造方法が開示されている。
For example,
特許文献2には、特定のホスフィン化合物を安定剤として含有する無電解銅めっき浴、及び該めっき浴を用いたフレキシブル基板の製造方法が開示されている。
特許文献3には、所定の表面粗さを有するポリイミド基板に無電解銅めっき層を形成したフレキシブル基板が開示されている。
導電層としては電解銅箔や圧延銅箔が用いられているが、より一層高い屈曲性や耐折性が要求される電子機器のヒンジ部などの可動部に使用するフレキシブル配線基板には圧延銅箔が汎用されている。電解銅箔は厚み方向に柱状結晶組織が発達しているため、折り曲げた際に粒界に沿ってクラックが伝播して早期に破断してしまうのに対し、圧延銅箔は結晶組織が等方的であるためクラックが伝播しにくく、耐屈曲信頼性が高い。
近年、樹脂基材に圧延銅箔、無電解銅めっき皮膜、電解銅めっき皮膜を組み合わせた導電層が形成されたフレキシブル基板が用いられるようになっているが、従来の無電解銅めっき液を用いた無電解銅めっき処理に起因して以下のようなめっき皮膜不良が発生していた。
まず、i)樹脂基材を用いた場合、従来の無電解銅めっき液では圧延銅箔が形成されていない樹脂基材部分には無電解銅めっき処理をしてもめっきが析出せず、樹脂基板上に無電解銅めっき皮膜が形成できない部分が生じていた。そのため無電解銅めっき処理後に電解銅めっき処理をしても該未析出部分には電気銅めっき皮膜を形成できず、該未析出部分に起因して配線パターン不良が生じたり、接続信頼性が低下したりすることがあった。
またii)樹脂基材上に形成された無電解銅めっき皮膜にはブリスター、すなわち無電解銅めっき皮膜が膨れて樹脂基材との間に空隙が発生することがあった。そのためめっき皮膜が樹脂基材から剥離したり、接続信頼性が低下したりする原因となることがあった。
Electrolytic copper foil and rolled copper foil are used as conductive layers, but rolled copper foil is generally used for flexible wiring boards used in moving parts such as hinges of electronic devices, which require even higher bending and folding resistance. Electrolytic copper foil has a columnar crystal structure developed in the thickness direction, so when it is folded, cracks propagate along the grain boundaries, causing early breakage, whereas rolled copper foil has an isotropic crystal structure, so cracks do not propagate easily and it has high bending resistance reliability.
In recent years, flexible substrates have come into use in which a conductive layer is formed on a resin substrate by combining rolled copper foil, electroless copper plating, and electrolytic copper plating. However, the following plating film defects have occurred due to conventional electroless copper plating processes using electroless copper plating solutions.
First, i) when a resin substrate is used, even if electroless copper plating is performed in a conventional electroless copper plating solution, plating does not deposit on the resin substrate portion where rolled copper foil is not formed, and an electroless copper plating film cannot be formed on the resin substrate in some portions. Therefore, even if electrolytic copper plating is performed after electroless copper plating, an electrolytic copper plating film cannot be formed on the non-deposited portion, and the non-deposited portion may cause wiring pattern defects or decrease connection reliability.
In addition, ii) the electroless copper plating film formed on the resin substrate may have blisters, i.e., the electroless copper plating film may swell to form gaps between the resin substrate and the plating film, which may cause the plating film to peel off from the resin substrate or reduce connection reliability.
本発明は上記問題に鑑みてなされた発明であって、その目的は上記i、iiの問題を解決できるフレキシブル基板の製造方法を提供することである。 The present invention was made in consideration of the above problems, and its purpose is to provide a manufacturing method for flexible substrates that can solve the above problems i and ii.
[1]樹脂基材上と、該樹脂基材の一部に形成された圧延銅箔上とに無電解銅めっき皮膜、及び電気銅めっき皮膜が積層されたフレキシブル基板の製造方法であって、
前記製造方法は、
無電解銅めっき処理を行って前記樹脂基材、及び圧延銅箔に前記無電解銅めっき皮膜を形成する工程、
電気銅めっき処理を行って前記無電解銅めっき皮膜に前記電気銅めっき皮膜を形成する工程を有し、
前記無電解銅めっき処理は、銅化合物、還元剤、第三級アルカノールアミン、ニッケル化合物、および含窒素芳香族化合物を含有する無電解銅めっき液を用いる。
[1] A method for producing a flexible substrate in which an electroless copper plating film and an electrolytic copper plating film are laminated on a resin substrate and a rolled copper foil formed on a part of the resin substrate, comprising:
The manufacturing method includes:
A step of forming the electroless copper plating film on the resin substrate and the rolled copper foil by performing an electroless copper plating process;
a step of forming the electrolytic copper plating film on the electroless copper plating film by performing an electrolytic copper plating process;
The electroless copper plating process uses an electroless copper plating solution containing a copper compound, a reducing agent, a tertiary alkanolamine, a nickel compound, and a nitrogen-containing aromatic compound.
[2]前記無電解銅めっき液における
前記第三級アルカノールアミンの濃度は、0.001g/L~1000g/L、
前記ニッケル化合物の濃度は、ニッケル濃度として0.0005g/L~5g/L、
前記含窒素芳香族化合物の濃度は、0.00001g/L~2g/Lである上記[1]に記載のフレキシブル基板の製造方法。
[2] The concentration of the tertiary alkanolamine in the electroless copper plating solution is 0.001 g/L to 1000 g/L;
The concentration of the nickel compound is 0.0005 g/L to 5 g/L in terms of nickel concentration,
The method for producing a flexible substrate according to the above-mentioned [1], wherein the concentration of the nitrogen-containing aromatic compound is 0.00001 g/L to 2 g/L.
[3]前記第三級アルカノールアミンは、トリエタノールアミン、およびトリイソプロパノールアミンよりなる群から選ばれる少なくとも1種である上記[1]または[2]に記載のフレキシブル基板の製造方法。 [3] The method for producing a flexible substrate according to the above [1] or [2], wherein the tertiary alkanolamine is at least one selected from the group consisting of triethanolamine and triisopropanolamine.
[4]前記含窒素芳香族化合物は、ビピリジン類、およびフェナントロリン類よりなる群から選ばれる少なくとも1種である上記[1]~[3]のいずれかに記載のフレキシブル基板の製造方法。 [4] The method for producing a flexible substrate according to any one of [1] to [3] above, wherein the nitrogen-containing aromatic compound is at least one selected from the group consisting of bipyridines and phenanthrolines.
本発明によれば、めっき未析出箇所、及びブリスターが抑制された良好な無電解銅めっき皮膜を形成できる。
また本発明によれば、ピット状の不良が抑制された良好な電気銅めっき皮膜を形成できる。
したがって本発明の製造方法によれば、良好な無電解銅めっき皮膜、及び良好な電気銅めっき皮膜を有するフレキシブル基板を提供できる。
According to the present invention, it is possible to form a good electroless copper plating film in which non-plated areas and blisters are suppressed.
Furthermore, according to the present invention, a good electrolytic copper plating film in which pit-like defects are suppressed can be formed.
Therefore, according to the manufacturing method of the present invention, it is possible to provide a flexible substrate having a good electroless copper plating film and a good electrolytic copper plating film.
本発明のフレキシブル基板は、樹脂基材の圧延銅箔形成面に無電解銅めっき処理、電気銅めっき処理を順次施して無電解銅めっき皮膜、及び電解銅めっき皮膜を形成することで製造できる。本発明では特に上記課題を解決する手段として所定の組成を有する無電解銅めっき浴を用いることに特徴を有する。 The flexible substrate of the present invention can be manufactured by sequentially performing electroless copper plating and electrolytic copper plating on the rolled copper foil surface of the resin substrate to form an electroless copper plating film and an electrolytic copper plating film. The present invention is characterized in that an electroless copper plating bath having a predetermined composition is used as a means for solving the above problems.
本発明の無電解銅めっき液は、第三級アルカノールアミン、ニッケル化合物、含窒素芳香族化合物、銅化物、および還元剤を含む。本発明の無電解銅めっき液は第三級アルカノールアミン、ニッケル化合物、および含窒素芳香族化合物の相乗効果により、
1)基材表面での無電解銅めっき皮膜の未析出を抑制、
2)基材表面に形成した無電解銅めっき皮膜のブリスターの抑制、及び
3)圧延銅箔表面に該圧延銅箔と同じ結晶配向をもたない無電解銅めっき皮膜を形成できる。
特に上記3)は本発明者らが従来の上記i)、ii)の問題について検討を重ねた結果、得られた知見である。すなわち、圧延銅箔上に形成した無電解銅めっき皮膜が圧延銅箔の結晶配向性と同じ結晶配向性を有すると、電気銅めっき皮膜も該結晶配向を有すること、また、このような電気銅めっき皮膜は表面光沢性がなく、電気銅めっき皮膜の表面にピット状の不良が生じることがわかった。そしてこのような電気銅めっき皮膜に起因してパターン不良や、接続信頼性の低下などの回路不良が生じる。このような問題を避けるためには上記3)のような無電解銅めっき皮膜を形成することが有効である。
本発明の無電解銅めっき液を用いれば、基板に対して上記1~3の効果が得られる。そして本発明の無電解銅めっき液を用いて形成された無電解銅めっき皮膜に電気銅めっき処理を施して形成した電気銅めっき皮膜はピット状の不良も抑制されている。
The electroless copper plating solution of the present invention contains a tertiary alkanolamine, a nickel compound, a nitrogen-containing aromatic compound, a copper compound, and a reducing agent. The electroless copper plating solution of the present invention has a synergistic effect of the tertiary alkanolamine, the nickel compound, and the nitrogen-containing aromatic compound,
1) Suppression of non-deposition of electroless copper plating film on the substrate surface,
2) suppression of blistering of the electroless copper plating film formed on the surface of the substrate; and 3) a electroless copper plating film that does not have the same crystal orientation as the rolled copper foil can be formed on the surface of the rolled copper foil.
In particular, the above 3) is a finding obtained by the present inventors as a result of repeated investigations into the above conventional problems i) and ii). That is, it was found that if an electroless copper plating film formed on a rolled copper foil has the same crystal orientation as the rolled copper foil, the electrolytic copper plating film also has the same crystal orientation, and that such an electrolytic copper plating film has no surface gloss and pit-like defects occur on the surface of the electrolytic copper plating film. Such an electrolytic copper plating film causes pattern defects and circuit defects such as reduced connection reliability. In order to avoid such problems, it is effective to form an electroless copper plating film as described in the above 3).
By using the electroless copper plating solution of the present invention, the above-mentioned
まず、本発明の無電解銅めっき液について説明する。
本発明の無電解銅めっき液は、銅化合物、還元剤、第三級アルカノールアミン、ニッケル化合物、および含窒素芳香族化合物を含有する。
First, the electroless copper plating solution of the present invention will be described.
The electroless copper plating solution of the present invention contains a copper compound, a reducing agent, a tertiary alkanolamine, a nickel compound, and a nitrogen-containing aromatic compound.
第三級アルカノールアミン
第三級アルカノールアミンは、錯化剤として作用するだけでなく、特に上記3)圧延銅箔表面に該圧延銅箔と同じ結晶配向をもたない無電解銅めっき皮膜の形成に有効であり、該無電解銅めっき皮膜表面に形成した電気銅めっき皮膜のピット状の不良抑制に寄与する。
Tertiary alkanolamines not only act as complexing agents, but are also particularly effective in the above-mentioned 3) formation on the surface of a rolled copper foil of an electroless copper plating film that does not have the same crystal orientation as the rolled copper foil, and contribute to suppressing pit-like defects in the electrolytic copper plating film formed on the surface of the electroless copper plating film.
第三級アルカノールアミンは、直鎖状、または分枝状のアルカノール基を3個以上有する化合物である。第三級アルカノールアミンは、好ましくは炭素数1~18のアルカノール基を有する化合物であり、より好ましくはトリメタノールアミン、トリエタノールアミン、トリプロパノールアミン、トリイソプロパノールアミン、トリブタノールアミン、トリペンタノールアミン、トリヘキサノールアミン、トリヘプタノールアミン、トリオクタノールアミン、トリノナノールアミン、トリデカノールアミン、トリドデカノールアミン、トリテトラデカノールアミン、トリヘキサデカノールアミン、トリオクタデカノールアミンである。第三級アルカノールアミンは、更に好ましくはトリエタノールアミン、トリイソプロパノールアミンである。
第三級アルカノールアミンは、1種、または2種以上を任意の割合で併用できる。
The tertiary alkanolamine is a compound having three or more linear or branched alkanol groups. The tertiary alkanolamine is preferably a compound having an alkanol group having 1 to 18 carbon atoms, and more preferably trimethanolamine, triethanolamine, tripropanolamine, triisopropanolamine, tributanolamine, tripentanolamine, trihexanolamine, triheptanolamine, trioctanolamine, trinonanolamine, tridecanolamine, tridodecanolamine, tritetradecanolamine, trihexadecanolamine, or trioctadecanolamine. The tertiary alkanolamine is more preferably triethanolamine or triisopropanolamine.
The tertiary alkanolamines can be used alone or in combination of two or more kinds in any desired ratio.
第三級アルカノールアミンの濃度が低すぎると添加効果が十分得られないことがある。また第三級アルカノールアミンの濃度が過剰になると、基材や圧延銅箔に無電解銅めっき皮膜で被覆されない箇所が生じるなど無電解銅めっき皮膜を均一(以下、皮膜均一性ということがある)に形成できないことがある。
無電解銅めっき液中の第三級アルカノールアミン濃度は、好ましくは0.001g/L以上、より好ましくは0.005g/L以上、更に好ましくは0.01g/L以上、より更に好ましくは0.5g/L以上であって、好ましくは1000g/L以下、より好ましくは600g/L以下、更に好ましくは200g/L以下である。
If the concentration of the tertiary alkanolamine is too low, the effect of adding the tertiary alkanolamine may not be sufficient, whereas if the concentration of the tertiary alkanolamine is too high, the electroless copper plating film may not be uniformly formed (hereinafter, sometimes referred to as film uniformity), for example, due to the occurrence of areas on the substrate or rolled copper foil that are not covered with the electroless copper plating film.
The concentration of tertiary alkanolamine in the electroless copper plating solution is preferably 0.001 g/L or more, more preferably 0.005 g/L or more, even more preferably 0.01 g/L or more, still more preferably 0.5 g/L or more, and is preferably 1000 g/L or less, more preferably 600 g/L or less, and even more preferably 200 g/L or less.
ニッケル化合物
ニッケル化合物は特に上記2)基材表面に形成した無電解銅めっき皮膜のブリスターの抑制に寄与する。
ニッケル化合物は好ましくは水溶性ニッケル化合物であり、より好ましくは、硫酸ニッケル、硝酸ニッケル、塩化ニッケル、酢酸ニッケル、クエン酸ニッケル、酒石酸ニッケル、グルコン酸ニッケル等である。
ニッケル化合物は、1種、または2種以上を任意の割合で併用できる。
Nickel Compounds Nickel compounds particularly contribute to the above-mentioned 2) prevention of blistering of the electroless copper plating film formed on the surface of the substrate.
The nickel compound is preferably a water-soluble nickel compound, more preferably nickel sulfate, nickel nitrate, nickel chloride, nickel acetate, nickel citrate, nickel tartrate, nickel gluconate, or the like.
The nickel compounds can be used alone or in combination of two or more kinds in any ratio.
ニッケル化合物の濃度が低すぎると添加効果が十分得られないことがある。またニッケル化合物の濃度が過剰になると皮膜均一性が得られないことがある。
無電解銅めっき液中のニッケル化合物濃度は、ニッケル濃度として好ましくは0.0005g/L以上、より好ましくは0.005g/L以上、更に好ましくは0.05g/L以上であって、好ましくは5g/L以下、より好ましくは2.5g/L以下、更に好ましくは0.5g/L以下である。
If the concentration of the nickel compound is too low, the effect of adding the nickel compound may not be sufficient, whereas if the concentration of the nickel compound is too high, the uniformity of the coating may not be obtained.
The nickel compound concentration in the electroless copper plating solution is preferably 0.0005 g/L or more, more preferably 0.005 g/L or more, and even more preferably 0.05 g/L or more, and is preferably 5 g/L or less, more preferably 2.5 g/L or less, and even more preferably 0.5 g/L or less, in terms of nickel concentration.
含窒素芳香族化合物
含窒素芳香族化合物は特に上記1)基材表面での無電解銅めっき皮膜の未析出の抑制に寄与する。
含窒素芳香族化合物は特に限定されないが、好ましくはピロリジン類、イミダゾール類、トリアゾール類、テトラゾール類、ベンゾイミダゾール類、ベンゾトリアゾール類、ピペリジン類、モルホリン類、ピペラジン類、ピリジン類、ビピリジン類、フェナントロリン類、オキサゾール類、ベンゾオキサゾール類、ピリミジン類、キノリン類、およびイソキノリン類であり、より好ましくはビピリジン類、フェナントロリン類である。
含窒素芳香族化合物は、1種、または2種以上を任意の割合で併用できる。
Nitrogen-Containing Aromatic Compound Nitrogen-containing aromatic compounds particularly contribute to the above-mentioned 1) suppression of non-deposition of the electroless copper plating film on the surface of the substrate.
The nitrogen-containing aromatic compound is not particularly limited, but is preferably pyrrolidines, imidazoles, triazoles, tetrazoles, benzimidazoles, benzotriazoles, piperidines, morpholines, piperazines, pyridines, bipyridines, phenanthrolines, oxazoles, benzoxazoles, pyrimidines, quinolines, and isoquinolines, and more preferably bipyridines and phenanthrolines.
The nitrogen-containing aromatic compounds can be used alone or in combination of two or more kinds in any desired ratio.
より具体的には4,4´-ジメチル-2,2´-ジピリジル、2,2´-ビキノリル、3-(2-ピリジル)-5,6-ジフェニル-1,2,4-トリアジン、3-(2-ピリジル)-5,6-ジフェニル-1,2,4-トリアジン-p,p´-ジスルホン酸2ナトリウム、3-(2-ピリジル)-5,6-ジフェニル-1,2,4-トリアジン、2,2´-ビス(5,6-ジメチル-1,2,4-トリアジン)、6,7-ジメチル-2,3-ジ(2-ピリジル)-キノキサリン、2,3-ビス(2-ピリジル)-6,7-ジメチルキノキサリン、2,2´-ビピリジル、6,7-ジエチル-2,3-ジ(2-ピリジル)-キノキサリン、1,10-フェナントロリン、2,9-ジメチル-1,10-フェナントロリン、および2,9-ジフェニル-1,10-フェナントロリンよりなる群から選ばれる少なくとも1種であることが好ましい。 More specifically, 4,4'-dimethyl-2,2'-dipyridyl, 2,2'-biquinolyl, 3-(2-pyridyl)-5,6-diphenyl-1,2,4-triazine, 3-(2-pyridyl)-5,6-diphenyl-1,2,4-triazine-p,p'-disulfonic acid disodium salt, 3-(2-pyridyl)-5,6-diphenyl-1,2,4-triazine, 2,2'-bis(5,6-dimethyl-1,2,4-triazine), 6,7- It is preferable that the compound is at least one selected from the group consisting of dimethyl-2,3-di(2-pyridyl)-quinoxaline, 2,3-bis(2-pyridyl)-6,7-dimethylquinoxaline, 2,2'-bipyridyl, 6,7-diethyl-2,3-di(2-pyridyl)-quinoxaline, 1,10-phenanthroline, 2,9-dimethyl-1,10-phenanthroline, and 2,9-diphenyl-1,10-phenanthroline.
含窒素芳香族化合物の濃度が低すぎると添加効果が十分得られないことがある。また含窒素芳香族化合物の濃度が過剰になると皮膜均一性が得られないことがある。
無電解銅めっき液中の含窒素芳香族化合物の濃度は、好ましくは0.00001g/L以上、より好ましくは0.0001g/L以上、更に好ましくは0.001g/L以上であって、好ましくは2g/L以下、より好ましくは1g/L以下、更に好ましくは0.1g/L以下、より更に好ましくは0.05g/L以下である。
If the concentration of the nitrogen-containing aromatic compound is too low, the effect of adding the compound may not be sufficient, whereas if the concentration of the nitrogen-containing aromatic compound is too high, the coating may not be uniform.
The concentration of the nitrogen-containing aromatic compound in the electroless copper plating solution is preferably 0.00001 g/L or more, more preferably 0.0001 g/L or more, even more preferably 0.001 g/L or more, and is preferably 2 g/L or less, more preferably 1 g/L or less, even more preferably 0.1 g/L or less, and still more preferably 0.05 g/L or less.
銅化合物
銅化合物は無電解銅めっき皮膜の形成に必須の化合物である。
上記銅化合物は水溶性銅塩であり、好ましくは硫酸銅、硝酸銅、塩化銅、酢酸銅、クエン酸銅、酒石酸銅、グルコン酸銅等が例示される。
銅化合物は、1種または2種以上を任意の割合で併用できる。
Copper Compounds Copper compounds are essential compounds for the formation of electroless copper plating films.
The copper compound is a water-soluble copper salt, and preferred examples thereof include copper sulfate, copper nitrate, copper chloride, copper acetate, copper citrate, copper tartrate, and copper gluconate.
The copper compounds can be used alone or in combination of two or more kinds in any desired ratio.
銅化合物の濃度が低すぎると析出速度が遅く、めっき時間が長くなることがある。また銅化合物濃度が高すぎるとめっき液が不安定になることがある。
無電解銅めっき液中の銅化合物の濃度は、銅濃度として好ましくは0.05g/L以上、より好ましくは0.5g/L以上であって、好ましくは30g/L以下、より好ましくは10g/L以下である。
If the concentration of the copper compound is too low, the deposition rate will be slow and the plating time will be long, while if the concentration of the copper compound is too high, the plating solution will become unstable.
The concentration of the copper compound in the electroless copper plating solution is preferably 0.05 g/L or more, more preferably 0.5 g/L or more, and is preferably 30 g/L or less, more preferably 10 g/L or less, in terms of copper concentration.
還元剤
還元剤は無電解銅めっき液中の銅イオンの還元剤として公知の還元剤を使用できる。還元剤は好ましくはホルムアルデヒド、パラホルムアルデヒド、グリオキシル酸、グリオキシル酸塩、ジメチルアミンボラン等のアミノボラン、水素化ホウ素アルカリ金属塩、ヒドラジン、ポリサッカリド、グルコース等の糖、次亜リン酸、次亜リン酸塩、グリコール酸、グリコール酸塩、ギ酸、ギ酸塩等である。
還元剤は、1種、または2種以上を任意の割合で併用できる。
The reducing agent may be any known reducing agent for copper ions in the electroless copper plating solution, and is preferably formaldehyde, paraformaldehyde, glyoxylic acid, glyoxylates, aminoboranes such as dimethylamine borane, alkali metal borohydrides, hydrazine, polysaccharides, sugars such as glucose, hypophosphorous acid, hypophosphites, glycolic acid, glycolate salts, formic acid, formates, etc.
The reducing agent can be used alone or in combination of two or more kinds in any ratio.
還元剤の濃度は銅イオンの還元に必要量含有されていればよい。無電解銅めっき液中の還元剤濃度は、好ましくは0.01g/L以上、より好ましくは0.5g/L以上であって、好ましくは100g/L以下、より好ましくは80g/L以下、更に好ましくは50g/L以下である。 The reducing agent may be present in an amount necessary for the reduction of copper ions. The reducing agent concentration in the electroless copper plating solution is preferably 0.01 g/L or more, more preferably 0.5 g/L or more, and is preferably 100 g/L or less, more preferably 80 g/L or less, and even more preferably 50 g/L or less.
本発明の無電解銅めっき液は、更に任意の添加剤として錯化剤、界面活性剤、pH調整剤、安定剤などを必要に応じて含有してもよい。 The electroless copper plating solution of the present invention may further contain optional additives such as complexing agents, surfactants, pH adjusters, and stabilizers as necessary.
錯化剤
本発明では第三級アルカノールアミンが錯化剤としても作用する。そのため他の錯化剤は添加しなくてもよいが、任意で添加してもよい。他の錯化剤としては無電解銅めっき液で用いられる公知の錯化剤を用いることができる。錯化剤は好ましくは酢酸、ギ酸などのモノカルボン酸、これらのアンモニウム塩、カリウム塩、ナトリウム塩等;マロン酸、コハク酸、アジピン酸、マレイン酸、フマル酸等のジカルボン酸、これらのアンモニウム塩、カリウム塩、ナトリウム塩;リンゴ酸、乳酸、グリコール酸、グルコン酸、クエン酸等のヒドロキシカルボン酸、これらのアンモニウム塩、カリウム塩、ナトリウム塩等;エチレンジアミンジ酢酸、1-ヒドロキシエチリデン-1,1-ジホスホン酸、これらのアンモニウム塩、カリウム塩、ナトリウム塩等;エチレンジアミンテトラ酢酸、ジエチレントリアミンペンタ酢酸等のアミノポリカルボン酸やこれらのアンモニウム塩、カリウム塩、ナトリウム塩等である。
錯化剤は、1種、または2種以上を任意の割合で併用できる。
Complexing Agent In the present invention, the tertiary alkanolamine also acts as a complexing agent. Therefore, other complexing agents may not be added, but may be added optionally. As the other complexing agent, known complexing agents used in electroless copper plating solutions can be used. The complexing agent is preferably monocarboxylic acid such as acetic acid and formic acid, and their ammonium salts, potassium salts, sodium salts, etc.; dicarboxylic acid such as malonic acid, succinic acid, adipic acid, maleic acid, fumaric acid, and their ammonium salts, potassium salts, sodium salts; hydroxycarboxylic acid such as malic acid, lactic acid, glycolic acid, gluconic acid, citric acid, and their ammonium salts, potassium salts, sodium salts, etc.; ethylenediaminediacetic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, and their ammonium salts, potassium salts, sodium salts, etc.; aminopolycarboxylic acid such as ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, and their ammonium salts, potassium salts, sodium salts, etc.
The complexing agent can be used alone or in combination of two or more kinds in any ratio.
無電解銅めっき液中の他の錯化剤の濃度は本発明の効果を阻害しない程度であればよく、好ましくは0.0001g/L以上、より好ましくは0.01g/L以上であって、好ましくは1000g/L以下、より好ましくは500g/L以下である。 The concentration of other complexing agents in the electroless copper plating solution may be at a level that does not impair the effects of the present invention, and is preferably 0.0001 g/L or more, more preferably 0.01 g/L or more, and is preferably 1000 g/L or less, more preferably 500 g/L or less.
界面活性剤
本発明では、無電解銅めっき液で用いられる公知の界面活性剤を用いることができる。界面活性剤は、イオン性界面活性剤、非イオン性界面活性剤、および両性界面活性剤のいずれも使用可能であり、適宜選択して使用できる。
界面活性剤は、1種、または2種以上を任意の割合で併用できる。
In the present invention, a known surfactant used in an electroless copper plating solution can be used. The surfactant can be any of an ionic surfactant, a nonionic surfactant, and an amphoteric surfactant, and can be appropriately selected and used.
The surfactants can be used alone or in combination of two or more in any desired ratio.
無電解銅めっき液中の界面活性剤の濃度は特に限定されず、好ましくは0.000001g/L以上、より好ましくは0.00001g/L以上であって、好ましくは5g/L以下、より好ましくは2g/L以下である。 The concentration of the surfactant in the electroless copper plating solution is not particularly limited, but is preferably 0.000001 g/L or more, more preferably 0.00001 g/L or more, and is preferably 5 g/L or less, more preferably 2 g/L or less.
pH調整剤
本発明では必要に応じてpH調整剤を添加して無電解銅めっき液のpHが下記範囲となるように適宜調整することが好ましい。
無電解銅めっき液で用いられる公知のpH調整剤を用いることができる。pH調整剤は好ましくは塩基性化合物、無機酸、有機酸であり、より好ましくは硫酸、塩酸、リン酸等の無機酸及び水酸化ナトリウム、水酸化カリウム、水酸化リチウム、水酸化セシウム、水酸化ルビジウム、水酸化アンモニウム、水酸化テトラメチルアンモニウム、水酸化ブチルアンモニウムである。
pH調整剤は、1種、または2種以上を任意の割合で併用できる。
pH Adjusting Agent In the present invention, it is preferable to add a pH adjusting agent as necessary to appropriately adjust the pH of the electroless copper plating solution to be within the following range.
Any known pH adjuster used in electroless copper plating solutions can be used, and the pH adjuster is preferably a basic compound, an inorganic acid, or an organic acid, and more preferably an inorganic acid such as sulfuric acid, hydrochloric acid, or phosphoric acid, or sodium hydroxide, potassium hydroxide, lithium hydroxide, cesium hydroxide, rubidium hydroxide, ammonium hydroxide, tetramethylammonium hydroxide, or butylammonium hydroxide.
The pH adjusters can be used alone or in combination of two or more in any desired ratio.
無電解銅めっき液のpH
無電解銅めっき液のpHは好ましくは酸性からアルカリ性までの領域、より好ましくは中性からアルカリ性までの領域である。具体的な無電解銅めっき液のpHは好ましくはpH2以上、より好ましくはpH7以上であって、好ましくはpH13以下である。
pH of electroless copper plating solution
The pH of the electroless copper plating solution is preferably in the range from acidic to alkaline, more preferably in the range from neutral to alkaline. The pH of the electroless copper plating solution is preferably 2 or more, more preferably 7 or more, and is preferably 13 or less.
以下、本発明のフレキシブル基板の製造方法について説明する。 The manufacturing method for the flexible substrate of the present invention is described below.
樹脂基材
樹脂基材1は要求される可撓性を有する樹脂基板であれば特に限定されず、各種公知の樹脂基板を使用できる(図1(a))。例えばポリイミド、ポリエチレンテレフタラート(PET)などの耐熱性に優れた樹脂を原料とする基材が好ましい。ポリイミド系基材やPET系基材は寸法安定性や熱収縮が少なく、また可撓性にも優れている。
Resin Substrate The
圧延銅箔
樹脂基材1の少なくとも1方の表面には圧延銅箔2が積層されている(図1(b))。樹脂基材の両面に圧延銅箔が積層されていてもよい。また圧延銅箔は、樹脂基板の表面の少なくとも一部に積層されていればよい。圧延銅箔の原料、製造方法、及び圧延銅箔の樹脂基材への積層方法は各種公知の方法を採用できる。また本発明では市販されている公知の圧延銅箔を有する樹脂基材を使用できる。圧延銅箔のサイズや配線パターンは要求特性に応じて適宜選択できる。
本発明のフレキシブル基板は、圧延銅箔表面上と基材表面上の両方に無電解銅めっき皮膜が形成されている。本発明では圧延銅箔でラインアンドスペースパターンが形成されたフレキシブル基板を用いることが好ましい。具体的にはフレキシブルディスプレイやFPC用コネクターなどに用いられるフレキシブル基板が例示される。
Rolled copper foil A rolled
The flexible substrate of the present invention has an electroless copper plating film formed on both the surface of the rolled copper foil and the surface of the substrate. In the present invention, it is preferable to use a flexible substrate having a line and space pattern formed with rolled copper foil. Specific examples include flexible substrates used for flexible displays and FPC connectors.
前処理工程
無電解銅めっき処理を行なう前に必要に応じて圧延銅箔を有する樹脂基板に適宜前処理を施してもよい。前処理としては脱脂工程、コンディショニング工程、酸洗工程、増感工程(触媒付与工程)、密着促進処理工程など各種公知の工程が例示される。
Before electroless copper plating, the resin substrate having the rolled copper foil may be subjected to a suitable pretreatment, if necessary. Examples of the pretreatment include a degreasing step, a conditioning step, an acid washing step, a sensitization step (a catalyst application step), and an adhesion promotion step.
無電解銅めっき処理
本発明では樹脂基材の圧延銅箔形成面側に無電解銅めっき皮膜を形成するための無電解銅めっき処理を行なう。無電解銅めっき液に樹脂基材を浸漬して基材1表面上、及び圧延銅箔2表面上に無電解銅めっき皮膜3を形成する(図1(c))。
無電解銅めっき処理には本発明の上記無電解銅めっき液を用いる。本発明では上記無電解銅めっき液を用いること以外の処理条件は限定されず、公知の無電解銅めっき処理条件を採用できる。
In the present invention, electroless copper plating is performed to form an electroless copper plating film on the rolled copper foil side of the resin substrate. The resin substrate is immersed in an electroless copper plating solution to form an electroless
The electroless copper plating process uses the electroless copper plating solution of the present invention. In the present invention, the processing conditions are not limited except for the use of the electroless copper plating solution, and known electroless copper plating processing conditions can be adopted.
無電解銅めっき皮膜の膜厚は要求特性に応じて適宜変更できる。無電解銅めっき皮膜は電気銅めっき処理時に溶解しない程度の膜厚とすることが好ましい。
無電解銅めっき皮膜の膜厚は、好ましくは0.01μm以上、より好ましくは0.1μm以上であって、好ましくは5μm以下、より好ましくは2μm以下である。
The thickness of the electroless copper plating film can be appropriately changed depending on the required properties. The electroless copper plating film is preferably thick enough not to dissolve during the copper electroplating process.
The thickness of the electroless copper plating film is preferably 0.01 μm or more, more preferably 0.1 μm or more, and is preferably 5 μm or less, more preferably 2 μm or less.
前処理工程
電気銅めっき処理を行なう前に必要に応じて無電解銅めっき皮膜表面に適宜前処理を施してもよい。前処理としては脱脂工程、コンディショニング工程、酸洗工程など各種公知の工程が例示される。
Pretreatment Step Before carrying out the electrolytic copper plating process, the surface of the electroless copper plating film may be subjected to a suitable pretreatment step, if necessary. Examples of the pretreatment step include various known steps such as a degreasing step, a conditioning step, and an acid washing step.
電気銅めっき処理
本発明では無電解銅めっき皮膜3表面に電気銅めっき皮膜4を形成するための電気銅めっき処理を行なう(図1(d))。
電気銅めっき処理に用いる電気銅めっき液の組成は特に限定されない。例えば実施例で使用している電気銅めっき液のように公知の電気銅めっき液を用いることができる。また電気銅めっき処理条件も限定されず、公知の電気銅めっき処理条件を採用できる。
Electrolytic Copper Plating Treatment In the present invention, electrolytic copper plating treatment is carried out to form an electrolytic
The composition of the electrolytic copper plating solution used in the electrolytic copper plating process is not particularly limited. For example, a known electrolytic copper plating solution such as the electrolytic copper plating solution used in the examples can be used. The electrolytic copper plating process conditions are also not limited, and known electrolytic copper plating process conditions can be used.
電気銅めっき皮膜の膜厚は要求特性に応じて適宜変更できる。電気銅めっき皮膜の膜厚を適宜調整して導電層の厚みを調整してもよい。
電気銅めっき皮膜の膜厚は、好ましくは0.1μm以上、より好ましくは1μm以上であって、好ましくは100μm以下、より好ましくは50μm以下である。
The thickness of the electrolytic copper plating film can be appropriately changed depending on the required properties. The thickness of the electrolytic copper plating film may be appropriately adjusted to adjust the thickness of the conductive layer.
The thickness of the electrolytic copper plating film is preferably 0.1 μm or more, more preferably 1 μm or more, and is preferably 100 μm or less, more preferably 50 μm or less.
電気銅めっき処理によって、樹脂基材上、及び圧延銅箔上に、無電解銅めっき皮膜と電気銅めっき皮膜がこの順番で積層された多層フレキシブル基板が得られる。 The copper electroplating process produces a multilayer flexible substrate in which an electroless copper plating film and an electrolytic copper plating film are laminated in that order on a resin substrate and on a rolled copper foil.
本発明のフレキシブル基板(図2(a))に公知の方法によって配線パターンを形成することでフレキシブル配線基板が得られる。
例えば電気銅めっき皮膜4上にレジスト層5を設け、該レジスト層5を所望の回路パターンにパターニングした後(図2(b))、露出した電気銅めっき皮膜4、その下地層である無電解銅めっき皮膜3をエッチング除去し(図2(c))、次いで該レジスト層5を剥離することにより、フレキシブル配線基板が得られる(図2(d))。
本発明のフレキシブル基板を用いると、配線の欠けや断線などの不良のないフレキシブル配線基板が得られる。
A flexible wiring board can be obtained by forming a wiring pattern on the flexible board of the present invention (FIG. 2(a)) by a known method.
For example, a resist
By using the flexible substrate of the present invention, a flexible wiring substrate free from defects such as chipping or breaking of wiring can be obtained.
以下、実施例を挙げて本発明をより具体的に説明するが、本発明はもとより下記実施例によって制限を受けるものではなく、前・後記の趣旨に適合し得る範囲で適当に変更を加えて実施することも勿論可能であり、それらはいずれも本発明の技術的範囲に包含される。なお、以下においては、特に断りのない限り、「部」は「質量部」を、「%」は「質量%」を意味する。 The present invention will be explained in more detail below with reference to examples. However, the present invention is not limited to the following examples, and it is of course possible to carry out the invention with appropriate modifications within the scope of the purpose described above and below, and all such modifications are included in the technical scope of the present invention. In the following, unless otherwise specified, "parts" means "parts by mass" and "%" means "% by mass."
実験1
樹脂基材としてポリイミドフィルム(Kapton200EN、東レ・デュポン社製:サイズ50mm×50mm)を用いた。このポリイミドフィルムの表面にラインアンドパターン(JX金属社製:各ライン幅1mm×ライン長さ50mm、スペース幅1mm)を形成した高機能圧延銅箔HA-V2銅箔を設けた。
このポリイミドフィルムに、表1に示す工程表に沿って前処理を行なった後、表2~7に示す組成の無電解銅めっき液を用いた無電解銅めっき処理を行なって樹脂基材表面、及び圧延銅箔表面に無電解銅めっき皮膜が形成された各試料を作製した。
試料の無電解銅めっき皮膜について下記2点を評価した。
(1)無電解銅めっき皮膜の未析出部分の有無を目視で確認した。
ポリイミドフィルムが露出している部分、すなわち無電解銅めっき皮膜の未析出部分がある場合は「不良」、未析出部分がない場合は「良好」と評価した。
(2)無電解銅めっき皮膜のブリスターの有無を目視で確認した。
ポリイミドフィルム上の無電解銅めっき皮膜にブリスターが1箇所以上ある場合は「あり」、ブリスターがない場合は「なし」と評価した。
A polyimide film (Kapton 200EN, manufactured by DuPont-Toray Co., Ltd.: size 50 mm x 50 mm) was used as the resin substrate. A high-performance rolled copper foil HA-V2 copper foil with a line and pattern (manufactured by JX Metals Corporation: each
This polyimide film was pretreated according to the process shown in Table 1, and then electroless copper plating was performed using electroless copper plating solutions having compositions shown in Tables 2 to 7 to prepare samples in which electroless copper plating films were formed on the resin substrate surface and the rolled copper foil surface.
The electroless copper plating films of the samples were evaluated for the following two points.
(1) The presence or absence of undeposited portions of the electroless copper plating film was visually confirmed.
When there was a portion where the polyimide film was exposed, i.e., when there was a portion where the electroless copper plating film was not deposited, it was rated as "poor", and when there was no undeposited portion, it was rated as "good".
(2) The presence or absence of blisters on the electroless copper plating film was visually confirmed.
When the electroless copper plating film on the polyimide film had one or more blisters, it was rated as "present", and when there were no blisters, it was rated as "absent".
実験2
実験1と同様にして無電解銅めっき処理を行なった後、無電解銅めっき皮膜に表1に示す酸洗クリーナー処理、酸洗処理を施してから電気銅めっき処理を行なって無電解銅めっき皮膜上に電気銅めっき皮膜が形成された各試料を作製した。
試料の電気銅めっき皮膜について下記評価をした。
(3)走査電子顕微鏡を用いて試料の電気銅めっき皮膜表面の光沢の有無を評価した。光沢がある場合を「あり」、光沢がない場合を「なし」とした。
After electroless copper plating was performed in the same manner as in
The electrolytic copper plating films of the samples were evaluated as follows.
(3) The presence or absence of gloss on the surface of the electrolytic copper plating film of the sample was evaluated using a scanning electron microscope. If there was gloss, it was rated as "present," and if there was no gloss, it was rated as "absent."
表2~表7より、本発明の無電解銅めっき液を用いて作製した実施例1~62の各試料は樹脂基材上の無電解銅めっき皮膜に(1)未析出部分、(2)ブリスターもなく、良好な無電解銅めっき皮膜を形成できた。また該無電解銅めっき皮膜上に形成した電気銅めっき皮膜は(3)光沢を有しており、本発明のフレキシブル基板はピットなどの欠陥もなかった。したがって本発明の製造方法で得られたフレキシブル基板を用いれば高い信頼性を有するフレキシブル配線基板を製造できる。 As can be seen from Tables 2 to 7, each of the samples of Examples 1 to 62 prepared using the electroless copper plating solution of the present invention was able to form a good electroless copper plating film on the resin substrate without (1) undeposited areas or (2) blisters. In addition, the electroless copper plating film formed on the electroless copper plating film had (3) a gloss, and the flexible substrate of the present invention had no defects such as pits. Therefore, flexible wiring substrates with high reliability can be manufactured using the flexible substrate obtained by the manufacturing method of the present invention.
比較例1、2は含窒素芳香族化合物を含まない無電解銅めっき液を用いた例であり、樹脂基板上には無電解銅めっき皮膜の未析出部分があった。そのため該未析出部分には電気銅めっき皮膜を形成できなかった。 Comparative examples 1 and 2 are examples in which an electroless copper plating solution that does not contain nitrogen-containing aromatic compounds was used, and there were areas on the resin substrate where the electroless copper plating film had not been deposited. Therefore, it was not possible to form an electrolytic copper plating film on the undeposited areas.
比較例3、4はニッケル化合物を含まない無電解銅めっき液を用いた例であり、樹脂基板上の無電解銅めっき皮膜にはブリスターが発生していた。そのためブリスター部分の無電解銅めっき皮膜は基板との密着性が悪く、また該ブリスター部分に形成した電気銅めっき皮膜は平滑性が低下した。 Comparative examples 3 and 4 are examples in which an electroless copper plating solution that does not contain nickel compounds was used, and blisters were formed in the electroless copper plating film on the resin substrate. As a result, the electroless copper plating film in the blistered areas had poor adhesion to the substrate, and the electrolytic copper plating film formed in the blistered areas had reduced smoothness.
比較例5、6はニッケル化合物と含窒素芳香族化合物を含まない無電解銅めっき液を用いた例であり、樹脂基板上には無電解銅めっき皮膜の未析出部分やブリスターがあった。そのため比較例1~4と同様の問題が生じた。 Comparative examples 5 and 6 are examples in which an electroless copper plating solution that does not contain nickel compounds or nitrogen-containing aromatic compounds was used, and there were undeposited areas and blisters in the electroless copper plating film on the resin substrate. As a result, the same problems as those in comparative examples 1 to 4 occurred.
比較例7は第三級アルカノールアミン、ニッケル化合物、および含窒素芳香族化合物を含まない無電解銅めっき液を用いた例であり、樹脂基板上には無電解銅めっき皮膜の未析出部分やブリスターがあり、また形成した電気銅めっき皮膜の表面光沢がなかった。そのため比較例1~4と同様の問題に加えて、電気銅めっき皮膜にはピット状の欠陥などが生じていた。 Comparative Example 7 is an example in which an electroless copper plating solution containing no tertiary alkanolamines, nickel compounds, or nitrogen-containing aromatic compounds was used, and there were undeposited areas and blisters in the electroless copper plating film on the resin substrate, and the electrolytic copper plating film formed had no surface gloss. Therefore, in addition to the same problems as in Comparative Examples 1 to 4, pit-like defects occurred in the electrolytic copper plating film.
比較例1~7のフレキシブル基板は無電解銅めっき皮膜、および/または電気銅めっき皮膜に欠陥があり、配線パターン等の不良原因となる。したがって信頼性を有するフレキシブル配線基板を製造できない。 The flexible boards of Comparative Examples 1 to 7 have defects in the electroless copper plating film and/or the electrolytic copper plating film, which causes defects in the wiring patterns, etc. Therefore, it is not possible to manufacture a reliable flexible wiring board.
1 樹脂基材
2 圧延銅箔
3 無電解銅めっき皮膜
4 電気銅めっき皮膜
5 レジスト層
REFERENCE SIGNS
Claims (4)
前記製造方法は、
無電解銅めっき処理を行って前記樹脂基材、及び圧延銅箔に前記無電解銅めっき皮膜を形成する工程、
電気銅めっき処理を行って前記無電解銅めっき皮膜に前記電気銅めっき皮膜を形成する工程を有し、
前記無電解銅めっき処理は、銅化合物、還元剤、第三級アルカノールアミン、ニッケル化合物、および含窒素芳香族化合物を含有する無電解銅めっき液を用いる。 A method for producing a flexible substrate in which an electroless copper plating film and an electrolytic copper plating film are laminated on a resin substrate and a rolled copper foil formed on a part of the resin substrate, the method comprising the steps of:
The manufacturing method includes:
A step of forming the electroless copper plating film on the resin substrate and the rolled copper foil by performing an electroless copper plating process;
a step of forming the electrolytic copper plating film on the electroless copper plating film by performing an electrolytic copper plating process;
The electroless copper plating process uses an electroless copper plating solution containing a copper compound, a reducing agent, a tertiary alkanolamine, a nickel compound, and a nitrogen-containing aromatic compound.
前記第三級アルカノールアミンの濃度は、0.001g/L~1000g/L、
前記ニッケル化合物の濃度は、ニッケル濃度として0.0005g/L~5g/L、
前記含窒素芳香族化合物の濃度は、0.00001g/L~2g/Lである請求項1に記載のフレキシブル基板の製造方法。 The concentration of the tertiary alkanolamine in the electroless copper plating solution is 0.001 g/L to 1000 g/L.
The concentration of the nickel compound is 0.0005 g/L to 5 g/L in terms of nickel concentration,
The method for manufacturing a flexible substrate according to claim 1, wherein the concentration of the nitrogen-containing aromatic compound is 0.00001 g/L to 2 g/L.
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| JP2016060935A (en) | 2014-09-17 | 2016-04-25 | 上村工業株式会社 | Wiring board manufacturing method and wiring board manufactured by the method |
| CN112400036A (en) | 2018-06-08 | 2021-02-23 | 德国艾托特克公司 | Electroless copper or copper alloy plating bath and method for plating |
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| US20140178572A1 (en) | 2012-12-26 | 2014-06-26 | Rohm And Haas Electronic Materials Llc | Formaldehyde free electroless copper plating compositions and methods |
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