JP7602937B2 - Vaporizer and deposition device - Google Patents

Description

The present invention relates to a vaporizer that vaporizes a thin film forming material using a carrier gas, and a deposition apparatus that deposits a thin film using a film forming gas that contains a thin film forming gas obtained by vaporizing a thin film forming material using a carrier gas.

2. Description of the Related Art A bottom-emission type organic EL device has been known in the past, in which an organic EL element is laminated on a substrate and light generated by the organic EL element is extracted from the substrate side.
A typical layer structure of a bottom-emission type organic EL device 300 is as shown in FIG. 6, in which an organic EL element composed of a transparent electrode layer 302, a light-emitting functional layer 303, and a back electrode layer 304 is laminated on a transparent substrate 301.
This light-emitting functional layer 303 is configured by laminating multiple organic compound layers, and for example, as shown in Figure 6, there is one in which a hole injection layer 310, a hole transport layer 311, an organic light-emitting layer 312, an electron transport layer 313, and an electron injection layer 314 are laminated in this order from the transparent electrode layer 302 side to the back electrode layer 304 side.

Here, in the organic EL device 300, the transparent electrode layer 302 is formed by a sputtering method or a CVD method, and the remaining layers 310 to 314 of the light-emitting functional layer 303 and the back electrode layer 304 are often formed by a vacuum deposition method. In other words, to improve the performance of the organic EL device 300, it is important to improve the functionality of the vacuum deposition device that performs the vacuum deposition method.

An example of a vacuum deposition apparatus used in the manufacture of the organic EL device 300 is the deposition apparatus described in, for example, Japanese Patent Application Laid-Open No. 2003-233696.
The deposition apparatus of Patent Document 1 is configured to heat and vaporize a powdered thin film forming material in an evaporation chamber to generate vapor, transport the vapor to a film formation chamber using a carrier gas, and spray a mixture of the carrier gas and vapor onto a substrate in the film formation chamber.

JP 2016-98417 A

However, the deposition device of Patent Document 1 uses a carrier gas to vaporize or sublimate the powdered thin film material into vapor. If the heat capacity of the carrier gas is insufficient, the thin film material will not vaporize completely and will reach the substrate in powder form, causing the powdered thin film material to adhere to the substrate and potentially causing anomalies.

The present invention aims to provide a vaporizer that can supply thin film material gas from which solid thin film forming materials have been removed, and a deposition apparatus that can prevent the solid thin film forming material from adhering to a substrate.

One aspect of the present invention for solving the above-mentioned problems is a gas supply device having a material vaporization section, a material supply section, a material supply piping section, a carrier gas supply section, a carrier gas supply piping section, a gas exhaust section, and a first filter member, the material supply section being connected to an upper section of the material vaporization section via the material supply piping section and capable of supplying a solid thin film forming material to the material vaporization section, the carrier gas supply section being connected to a lower section of the material vaporization section via the carrier gas supply piping section and capable of supplying a carrier gas having a temperature equal to or higher than the boiling point or sublimation point of the thin film forming material. a gas supply unit to the material vaporization unit, the material vaporization unit vaporizes the thin film material supplied from the material supply unit with the carrier gas supplied from the carrier gas supply unit to form a thin film material gas, and supplies the thin film material gas to the gas exhaust unit, and the first filter member is provided between the material vaporization unit and the gas exhaust unit, and allows the thin film material gas in the material vaporization unit to move toward the gas exhaust unit, while restricting the movement of the thin film material toward the gas exhaust unit.

The term "vaporization" here includes not only the phenomenon in which a liquid turns into a gas (evaporation, boiling), but also the phenomenon in which a solid turns into a gas directly without first becoming a liquid (sublimation). The same applies below.

According to this aspect, a first filter member is provided between the material vaporization section and the gas exhaust section, which allows the movement of the thin film material gas and restricts the movement of the thin film material, thereby preventing the thin film material from mixing with the thin film material gas exhausted from the gas exhaust section.

A preferred aspect is to have a second filter member provided within the material vaporization section or between the material vaporization section and the carrier gas supply section, which restricts the movement of the thin film forming material within the material vaporization section toward the carrier gas supply section.

According to this aspect, a second filter member is provided to restrict the movement of the thin film forming material, so that the thin film forming material can be prevented from moving toward the carrier gas supply section.

In a more preferred aspect, the second filter member is arranged to divide the material vaporization section into upper and lower sections, and the material vaporization section is capable of vaporizing the thin film forming material on the second filter member to form the thin film material gas.

According to this aspect, the thin film forming material trapped by the second filter member can be vaporized into thin film material gas, further reducing the amount of thin film forming material residue.

In a more preferred embodiment, the second filter member is arranged to divide the material vaporization section into upper and lower sections, and the material vaporization section has a space between the second filter member and the carrier gas supply piping section.

According to this aspect, there is a space between the second filter member and the carrier gas supply piping section. Therefore, the carrier gas can be passed through the second filter member while being diffused within the space, and the thin film forming material can be vaporized more efficiently.

In a preferred embodiment, the gas exhaust section is arranged to surround the material supply pipe section.

This aspect makes it possible to make the device even more compact.

In a preferred aspect, the material vaporizing section is cylindrical and the opening area of a cross section perpendicular to the central axis is larger than the opening area of a cross section perpendicular to the central axis of the material supply piping section.

According to this aspect, the carrier gas can be exposed to the thin film forming material more efficiently, and the thin film material gas can be formed more efficiently.

なお、Ｆは前記キャリアガスの流量［ｍ^３／ｓ］を表し、ｄは前記材料気化部の内径［ｍ］を表し、Ｄｐは前記薄膜形成材料の最大粒子径［ｍ］を表し、ｍは前記薄膜形成材料の重量［ｋｇ］を表し、ｇは重力加速度［ｍ／ｓ^２］を表し、μは前記キャリアガスの粘性係数［Ｐａ・ｓ］を表す。 In a preferred aspect, the material vaporizing portion is cylindrical, the thin film forming material is in powder form, and satisfies the following formula (1).

In addition, F represents the flow rate of the carrier gas [ ^m3 /s], d represents the inner diameter of the material vaporization section [m], Dp represents the maximum particle diameter of the thin film forming material [m], m represents the weight of the thin film forming material [kg], g represents the gravitational acceleration [m/ ^s2 ], and μ represents the viscosity coefficient of the carrier gas [Pa·s].

According to this aspect, the carrier gas can be exposed to the thin film forming material more efficiently.

In a preferred aspect, the material supply piping section has a first piping section and a second piping section from the material supply section side toward the material vaporization section side, and the inner diameter of the second piping section is larger than the inner diameter of the first piping section.

According to this aspect, since the inner diameter of the second piping section is larger than the inner diameter of the first piping section, the thin film forming material is less likely to flow back from the material vaporizing section to the material supplying section.

In a preferred aspect, the material supply section has a material supply device that temporarily stores the thin film forming material within a vacuum chamber, and a material introduction section that introduces the thin film forming material toward the material supply piping section, the material supply device has a material discharge section above the material introduction section, and is capable of discharging a predetermined amount of the thin film forming material from the material discharge section, the thin film forming material falls from the material discharge section toward the material introduction section, and the thin film forming material is introduced from the material introduction section to the material supply piping section.

According to this aspect, the thin film forming material stored in the material supply device and the thin film forming material introduced from the material introduction section to the material supply piping section are separated within the vacuum chamber, so no pressure difference occurs between the inside of the material supply device and the material discharge section, making it possible to transfer the thin film forming material in a stable atmosphere.

One aspect of the present invention is a deposition apparatus that has the vaporizer described above, a film-forming chamber, and a supply flow path that connects the vaporizer and the film-forming chamber, and sprays a film-forming gas containing the thin film material gas onto a substrate in the film-forming chamber to form a film.

This aspect makes it possible to prevent the solid thin film forming material from adhering to the substrate.

According to the vaporizer of the present invention, it is possible to supply a thin film material gas from which the solid thin film forming material has been removed.
According to the deposition apparatus of the present invention, it is possible to prevent the solid thin film forming material from adhering to the substrate.

1 is a configuration diagram that illustrates a vapor deposition device according to a first embodiment of the present invention. 2 is a cross-sectional view showing a schematic view of a main part of the vaporizer shown in FIG. 1. FIG. 2 is a front view showing a schematic view of a main part of the material supply unit in FIG. 1 . 3 is an explanatory diagram showing the flows of a thin film forming material, a carrier gas, and a thin film material gas in the vaporization apparatus of FIG. 2. FIG. 5 is a configuration diagram illustrating a deposition device according to a second embodiment of the present invention. FIG. 1 is a cross-sectional view showing a typical layer structure of an organic EL device, and hatching has been omitted for ease of understanding.

The following describes an embodiment of the present invention in detail.

The deposition apparatus 1 of the first embodiment of the present invention is a vacuum deposition apparatus that is preferably used to form the layers 310 to 314 and the back electrode layer 304 of the light-emitting functional layer 303 of the organic EL device 300 shown in FIG. 6 as described above.

As shown in FIG. 1 , the deposition apparatus 1 mainly includes a film forming section 2 and a vaporizing section 3 .
The deposition apparatus 1 is a vacuum deposition apparatus that vaporizes or sublimes a thin film forming material including an organic material in the vaporizer 40 of the vaporizer section 3 to generate vapor of the thin film forming material (hereinafter also referred to as thin film material gas), and forms a thin film on the substrate 100 by spraying the film forming gas including the thin film material gas onto the substrate 100 in the film forming section 2.
The film forming gas is a vapor-containing gas that contains at least a thin film material gas, and specifically, is a mixed gas in which a carrier gas is mixed with a thin film material gas.

As shown in FIG. 1 , the film forming unit 2 has a substrate holding unit 11 and a deposition head 12 arranged in a film forming chamber 10 .
The film forming unit 2 is capable of forming a desired thin film on the substrate 100 by spraying a film forming gas via a deposition head 12 toward the substrate 100 held by the substrate holding unit 11 .

The film-forming section 2 is connected to an exhaust system (not shown), and the exhaust system can evacuate the film-forming chamber 10, making it possible to create a substantially vacuum state inside the film-forming chamber 10.

The substrate holding section 11 is a section capable of holding the substrate 100, and the substrate 100 can be transported in and out of the deposition chamber 10 through a gate (not shown).

The deposition head 12 has a gas ejection port that faces the substrate 100 held by the substrate holding part 11 , and is a part that blows a film forming gas from the gas ejection port onto the substrate 100 .
The deposition head 12 is connected to the vaporizer 40 of the vaporizer 3 via a supply passage 15 .

As shown in FIG. 1 , the supply flow path 15 is a flow path that connects the deposition head 12 and the vaporization chamber 51, and is composed of, in order from the deposition head 12 side, a first supply path 20, a second supply path 21, and a third supply path 22.
An on-off valve 25 is provided midway along the first supply path 20 , and an on-off valve 26 is provided in the third supply path 22 .

An exhaust system 31 is connected between the on-off valves 25, 26 of the supply flow path 15 via an exhaust flow path 30, and an exhaust valve 32 is connected to the middle of the exhaust flow path 30. In other words, the exhaust flow path 30 is connected to the first supply path 20, and it is possible to exhaust gas from within the deposition head 12 via the first supply path 20.

The vaporizing section 3 generates a vapor-containing gas containing a thin film material gas, and supplies the generated vapor-containing gas to the deposition head 12 of the film forming section 2 as a film forming gas.
As shown in FIG. 1, the vaporization section 3 includes a vaporization device 40 and a gas supply section 41 .
As shown in Figures 1 and 2, vaporization device 40 mainly includes a vaporization chamber 51, a material supply section 52, gas supply sections 53 and 54, a material supply piping section 55, a gas supply piping section 56, a first filter member 58, and a second filter member 59.

As shown in Figure 2, the vaporization chamber 51 is a cylindrical vertical tube that extends in the vertical direction, and is the part where the thin film forming material is vaporized or sublimated to generate thin film material gas.

The vaporization chamber 51 is cylindrical and is divided into upper and lower sections by a first filter member 58 , and includes a material vaporization section 60 and a gas exhaust section 61 .
The material vaporizing section 60 is a section capable of performing flash evaporation, which instantaneously vaporizes or sublimates a thin film forming material.
The material vaporizing section 60 has an internal space 65 therein, which is divided vertically into an upper space 66 and a lower space 67 by a second filter member 59 .

The upper space 66 is located above the second filter member 59 and is a vaporization space in which the thin film forming material is vaporized to generate a thin film material gas.
The upper space 66 communicates with the material supply pipe section 55 and with the gas exhaust section 61 via the first filter member 58 .
The lower space 67 is a space located below the second filter member 59 and communicates with the gas supply pipe 56 .

The inner diameter d of the material vaporization section 60 is set to satisfy the following formula (1):

In addition, F represents the flow rate of the carrier gas [ ^m3 /s], d represents the inner diameter [m] of the material vaporization section 60, Dp represents the maximum particle diameter [m] of the thin film forming material, m represents the weight [kg] of the thin film forming material, g represents the gravitational acceleration [m/ ^s2 ], and μ represents the viscosity coefficient of the carrier gas [Pa·s].
The maximum particle size of the thin film-forming material can be determined by sieving the material through a sieve having a known opening size and excluding particles having a size larger than the opening size.

The gas exhaust section 61 is provided at the top of the material vaporizing section 60 and is a section that exhausts thin film material gas toward the on-off valve 26 side of the supply flow path 15 .
The gas exhaust section 61 extends in the vertical direction and is cylindrical with a closed upper side. The third supply path 22 is connected to the side, and an insertion hole 95 is formed on the upper surface through which the second piping section 91 can be inserted.

The material supply section 52 is a material supply mechanism that quantitatively supplies solid thin film forming material and carrier gas to the material vaporization section 60 of the vaporization chamber 51 via the material supply piping section 55, and also serves as a storage container for temporarily storing the thin film forming material.
The material supply unit 52 is capable of sending the thin film forming material to the material vaporization unit 60 side via the material supply piping unit 55 by means of a carrier gas supplied from the gas supply unit 53 .

As shown in FIG. 3, the material supply section 52 includes a vacuum chamber 70 , a material storage section 71 , a material supply device 72 , a material introduction section 73 , a material transfer piping section 74 , and a gas transfer piping section 75 .
The vacuum chamber 70 is connected to an exhaust system (not shown), and the inside of the vacuum chamber 70 can be evacuated by the exhaust system, thereby making the inside of the vacuum chamber 70 substantially a vacuum state.
The material storage section 71 is provided outside the vacuum chamber 70 and is a section for storing thin film forming materials.
The material supply device 72 is a device that supplies a predetermined amount of thin film forming material to the material introduction section 73, and includes a main body section 80, a material receiving section 81, and a material discharge section 82.
The main body 80 is a portion for temporarily storing thin film forming materials.
The material receiving section 81 is a section that receives the thin film forming material from the material storage section 71 via the atmosphere in the vacuum chamber 70 and introduces the received thin film forming material into the main body section 80 .
The material discharge section 82 is a section that quantitatively discharges the thin film forming material within the main body section 80 to the material introduction section 73 via the atmosphere within the vacuum chamber 70 .

The material introduction section 73 is a section that receives the thin film forming material from the material discharge section 82 via the atmosphere in the vacuum chamber 70 and introduces the received thin film forming material into the material supply piping section 55 .
The material transfer piping section 74 is a pipe that extends inside and outside the vacuum chamber 70 and transfers the thin film forming material in the material storage section 71 located outside the vacuum chamber 70 to the material receiving section 81 located inside the vacuum chamber 70. An opening/closing valve 85 is provided midway through the material transfer piping section 74.
The gas transport piping section 75 is a pipe that introduces the carrier gas supplied from the gas supply section 53 into the vacuum chamber 70 , and an opening/closing valve 86 is provided midway along the gas transport piping section 75 .

The material-side gas supply unit 53 is a portion that supplies a carrier gas to the material supply unit 52 and adjusts the amount of thin film forming material supplied to the vaporization chamber 51 .
The material-side gas supply unit 53 includes a heat exchanger and a mass flow controller downstream of the carrier gas supply source, and is capable of supplying carrier gas at a predetermined temperature and a predetermined flow rate to the material supply unit 52 .
As shown in FIG. 2, the vaporization-side gas supply unit 54 (carrier gas supply unit) is a portion that supplies a carrier gas to the material vaporization unit 60 of the vaporization chamber 51 and adjusts the amount of vaporization of the thin film forming material.
The vaporization-side gas supply unit 54 includes a heat exchanger and a mass flow controller downstream of the carrier gas supply source, and is capable of supplying carrier gas at a predetermined temperature and a predetermined flow rate to the material vaporization unit 60 .
In other words, the vaporization side gas supply unit 54 is capable of supplying a carrier gas at a higher temperature than the carrier gas supplied by the material side gas supply unit 53, and is capable of supplying a carrier gas at a temperature higher than the boiling point or sublimation point of the thin film formation material.

The material supply piping section 55 is a connecting pipe that connects the material supply section 52 and the vaporization chamber 51, and as shown in Figure 2, has a first piping section 90 and a second piping section 91 from the material supply section 52 side to the vaporization chamber 51 side.
In the material supply piping section 55 , a first piping section 90 and a second piping section 91 are connected via an on-off valve 92 , and a flow rate adjustment valve 93 is provided midway in the second piping section 91 .
The inner diameter of the second piping section 91 is larger than the inner diameter of the first piping section 90 located upstream in the flow direction of the thin film forming material, and is preferably 1.5 to 3 times the inner diameter of the first piping section 90.
The inner diameter of the second piping section 91 is smaller than the inner diameter d of the vaporization chamber 51 located downstream in the flow direction of the thin film forming material, and it is preferable that the inner diameter of the vaporization chamber 51 is 1.5 to 3 times the inner diameter of the second piping section 91.

The on-off valve 92 is a gate valve that separates the internal space of the first piping section 90 from the internal space of the second piping section 91, and for example, a ball valve can be used.
The flow rate adjustment valve 93 is a valve that divides the internal space of the second piping section 91 and adjusts the flow rate of the thin film forming material passing through, and for example, a globe valve can be used.

The gas supply piping section 56 (carrier gas supply piping section) is a connecting pipe that connects the material vaporizing section 60 of the vaporizing chamber 51 to the vaporizing side gas supply section 54, and has an opening/closing valve 97 in the middle.

As shown in FIG. 2, the first filter member 58 is a filter that is provided at the boundary between the material vaporizing section 60 and the gas exhaust section 61 and separates the material vaporizing section 60 from the gas exhaust section 61 .
The first filter member 58 is a member that allows the movement of thin film material gas in the material vaporizing section 60 toward the gas exhaust section 61 side, and restricts the movement of solid thin film forming material toward the gas exhaust section 61 side.
The first filter member 58 is an annular sheet having an opening 96 in the center.
The first filter member 58 is provided with a plurality of gas passage holes through which the thin film forming material is substantially unable to pass.
Here, "substantially impermeable" refers to a state in which 99.9% or more of the thin film-forming material cannot pass through. In other words, "substantially impermeable for the thin film-forming material" refers to a state in which 99.9% or more of the thin film-forming material cannot pass through. The same applies hereinafter.

The second filter member 59 is provided in the material vaporizing section 60 and serves to restrict the movement of the thin film forming material in the material vaporizing section 60 toward the vaporizing side gas supply section 54 .
The second filter member 59 is a circular sheet having a plurality of gas passage holes through which the thin film forming material is substantially unable to pass.

Here, we will explain the relative positions of each component part of the vaporizer 40.

As shown in FIG. 2 , in the vaporization device 40 , a portion of the second piping section 91 of the material supply piping section 55 is inserted into the vaporization chamber 51 and passes through an insertion hole 95 of the gas exhaust section 61 to be positioned within the material vaporization section 60 .
The gas exhaust unit 61 is connected to the upper part of the material vaporizing unit 60 and is provided so as to surround the second piping unit 91 .
The vaporization chamber 51, the first piping section 90, and the second piping section 91 all have the same central axis.
The vaporization chamber 51 and the second piping section 91 are double-cylindrical, and a gap is formed between the inner wall of the material vaporization section 60 and the outer wall of the second piping section 91, and a first filter member 58 is formed to block the gap.
The second piping portion 91 is inserted into an opening 96 of the first filter member 58 , and the edge portion of the first filter member 58 is held by the inner wall of the vaporization chamber 51 .

As shown in FIG. 1, the gas supply unit 41 is connected between the on-off valves 25, 26 of the supply flow path 15 via a connection path 98, and is a part that adjusts the total flow rate of the film formation gas released from the deposition head 12 and adjusts the film formation speed.
The gas supply unit 41 includes a heat exchanger and a mass flow controller downstream of the carrier gas supply source, and is capable of supplying carrier gas at a predetermined temperature and a predetermined flow rate to the supply passage 15 via a connection path 98.

The connection path 98 is a connection pipe that connects the gas supply unit 41 and the supply flow path 15, and has an on-off valve 99 installed midway.

The thin film forming material is heated with a carrier gas to generate a thin film material gas. The thin film forming material used in this embodiment is mainly an organic EL material such as the organic material constituting each layer 310 to 314 of the light emitting functional layer 303 of the organic EL device 300 and the metal material constituting the back electrode layer 304, and is a powder-like solid material at room temperature.

The carrier gas supplied by the gas supply units 41, 53, and 54 is a heated carrier gas that has been heated to a predetermined temperature.
The temperature of the carrier gas may be appropriately changed depending on the boiling point or sublimation point of the thin film forming material, the supply location, etc., and is preferably, for example, 100 degrees Celsius or higher and 700 degrees Celsius or lower.
The carrier gas is preferably an inert gas such as nitrogen gas or argon gas, and more preferably nitrogen gas.

The exhaust system 31 exhausts gas from the internal space of the exhaust flow path 30, and can be, for example, a vacuum exhaust pump such as a dry pump, a turbomolecular pump (TMP), or a cryopump (CP).

Next, we will explain an example of a method for manufacturing a thin film using the deposition device 1.

First, the material storage section 71 is filled with thin film forming material as required and sealed, the thin film forming material is degassed, and the inside of the vacuum chamber 70 is evacuated to create a vacuum state.
Next, in the vacuum chamber 70, the thin film forming material is dropped from the material transfer piping 74 connected to the material storage section 71 into the material receiving section 81, and the thin film forming material is introduced from the material receiving section 81 into the main body section 80. Then, a predetermined amount of the thin film forming material is dropped from the material discharge section 82 provided at the bottom of the main body section 80 toward the material introduction section 73, and the thin film forming material is introduced from the material introduction section 73 into the material supply piping section 55.

When the thin film forming material is introduced into the material supply piping section 55, a carrier gas is supplied from the material side gas supply section 53 to push the thin film forming material downstream, and as shown in Figure 4, the thin film forming material A is transported toward the material vaporization section 60 of the vaporization chamber 51 through the first piping section 90 and the second piping section 91, and is supplied into the interior of the material vaporization section 60 from the top of the material vaporization section 60.
Here, in the lower part of the material vaporizing section 60 , a carrier gas B having a temperature equal to or higher than the boiling point or sublimation point of the thin film forming material is supplied from the vaporizing gas supply section 54 via the gas supply piping section 56 .
The thin film forming material A that is sent out from the top of the material vaporization section 60 and falls is exposed to high-temperature carrier gas B that is supplied upward from the bottom of the material vaporization section 60 and is heated within the material vaporization section 60, and instantly vaporizes or sublimes, changing its properties, transforming into thin film material gas C and rising toward the top of the material vaporization section 60.
The thin film material gas C generated as described above passes from the material vaporizing section 60 through the first filter member 58 to the gas exhaust section 61 , and is sent from the gas exhaust section 61 to the supply flow path 15 .

When the thin film material gas is thus generated in the vaporization chamber 51, the thin film material gas is passed through the supply flow path 15 and is discharged as a film-forming gas from the deposition head 12 onto the substrate 100 in the film-forming chamber 10. The film-forming gas discharged onto the substrate 100 is cooled on the substrate 100 and precipitates to form a thin film.

At this time, if necessary, the on-off valve 99 of the connection path 98 can be opened to supply carrier gas at a predetermined temperature at a predetermined flow rate from the gas supply unit 41 to the supply flow path 15. In this way, the flow rate and temperature of the carrier gas discharged from the deposition head 12 can be kept constant regardless of the process conditions of the vaporization device 40. In this case, the film formation gas is a mixed gas of the thin film material gas generated in the vaporization chamber 51 and the carrier gas supplied from the gas supply unit 41.

According to the vaporization device 40 of the first embodiment, in the material vaporization section 60, the thin film forming material supplied from the material supply section 52 is vaporized by the high-temperature carrier gas supplied from the vaporization side gas supply section 54 to form a thin film material gas, which is passed through the first filter member 58 and supplied from the gas exhaust section 61 to the supply flow path 15 side. Therefore, when the thin film material gas is flowed from the material vaporization section 60 to the gas exhaust section 61, the powdered thin film forming material contained in the thin film material gas is captured by the first filter member 58, and essentially only the thin film material gas reaches the gas exhaust section 61. As a result, it is possible to prevent the thin film forming material from being mixed with the thin film material gas discharged from the gas exhaust section 61 to the supply flow path 15.

According to the vaporizer 40 of the first embodiment, the material vaporizer 60 is divided into upper and lower parts by the second filter member 59, and the movement of the thin film forming material from the upper space 66 side to the lower space 67 side is restricted. Therefore, the movement of the thin film forming material to the vaporization side gas supply section 54 side can be prevented.

According to the vaporizer 40 of the first embodiment, the material vaporizer 60 can vaporize the thin film material captured on the second filter member 59 to form a thin film material gas, thereby reducing the amount of residue of the thin film material.

The vaporizer 40 of the first embodiment has a lower space 67 between the second filter member 59 and the gas supply pipe section 56, so that the carrier gas can pass through the second filter member 59 while being diffused within the lower space 67, and the thin film forming material can be vaporized more efficiently.

According to the vaporizer 40 of the first embodiment, the gas exhaust section 61 is arranged to surround the periphery of the material supply pipe section 55, so that the vertical height can be reduced, making it possible to make the device more compact.

According to the vaporizer 40 of the first embodiment, the first filter member 58 closes the gap between the vaporizer chamber 51 and the second piping section 91 of the material supply piping section 55. Therefore, no matter which part of the gas exhaust section 61 the thin film material gas enters from, it passes through the first filter member 58, and the thin film forming material can be collected more reliably.

According to the vaporization device 40 of the first embodiment, the opening area of the cross section perpendicular to the central axis of the material vaporization section 60 is larger than the opening area of the cross section perpendicular to the central axis of the material supply pipe section 55. Therefore, the thin film forming material that has fallen from the material supply pipe section 55 can be exposed to the carrier gas in a diffused state within the material vaporization section 60, and thin film material gas can be efficiently formed.

According to the vaporizer 40 of the first embodiment, the relationship between the carrier gas, the material vaporizer 60, and the thin film forming material satisfies the following formula (1), so that the thin film forming material is less likely to flow back from the material supply pipe section 55, and the thin film forming material can flow to the second filter member 59 side.

In addition, F represents the flow rate of the carrier gas [ ^m3 /s], d represents the inner diameter [m] of the material vaporization section 60, Dp represents the maximum particle diameter [m] of the thin film forming material, m represents the weight [kg] of the thin film forming material, g represents the gravitational acceleration [m/ ^s2 ], and μ represents the viscosity coefficient of the carrier gas [Pa·s].

According to the vaporization device 40 of the first embodiment, the material supply pipe section 55 has a first pipe section 90 and a second pipe section 91 from the material supply section 52 side toward the material vaporization section 60 side, and the inner diameter of the second pipe section 91 is larger than the inner diameter of the first pipe section 90. Therefore, a flow rate difference occurs between the first pipe section 90 and the second pipe section 91, and the thin film forming material is unlikely to flow back from the material vaporization section 60 side to the material supply section 52 side.

According to the vaporization device 40 of the first embodiment, the material supply unit 52 is configured such that the thin film forming material falls from the material discharge unit 82 of the material supply device 72 to the material introduction unit 73 within the vacuum chamber 70, and is then introduced from the material introduction unit 73 into the material supply piping unit 55. In other words, the thin film forming material stored in the material supply device 72 and the thin film forming material introduced from the material introduction unit 73 into the material supply piping unit 55 are separated within the vacuum chamber 70. Therefore, no pressure difference occurs between the material supply device 72 and the material discharge unit 82, and the thin film forming material can be transferred in a stable atmosphere.

According to the deposition apparatus 1 of the first embodiment, the vaporizer 40 supplies a thin film material gas that does not substantially contain solid thin film material, so that the solid thin film material can be prevented from adhering to the substrate 100.

According to the deposition device 1 of the first embodiment, the material supply unit 52 can quantitatively supply the thin film forming material to the material vaporization unit 60, so that only the necessary amount of material is continuously supplied and the entire amount is vaporized, thereby stabilizing the vaporization rate.

According to the deposition apparatus 1 of the first embodiment, the thin film forming material falls onto the second filter member 59 from the material supply pipe section 55 provided at the top of the material vaporization section 60, and the carrier gas supplied from the gas supply pipe section 56 provided at the bottom of the material vaporization section 60 becomes a uniform flow by the second filter member 59. Therefore, the thin film forming material and the carrier gas come into contact efficiently on the second filter member 59, making it possible to vaporize at a low temperature, and deterioration of the thin film forming material can be suppressed. In addition, thin film forming material with a large particle size that takes a long time to vaporize falls under its own weight, and vaporization proceeds on the second filter member 59, so the generation of unvaporized thin film forming material can be suppressed.

Next, a deposition device 200 according to a second embodiment of the present invention will be described. Note that the same components as those in the deposition device 1 according to the first embodiment will be denoted by the same reference numerals and will not be described.

As shown in FIG. 5, a deposition apparatus 200 according to the second embodiment of the present invention is composed of a film forming section 2, a plurality of vaporizing sections 3 (3a, 3b), and a mixer 201.
In the following description, unless otherwise specified, in order to distinguish between vaporizers 3a and 3b, components belonging to vaporizer 3a are marked with "a" and components belonging to vaporizer 3b are marked with "b."

The mixing device 201 is a device that mixes thin film material gases generated from different types of thin film forming materials in each vaporization section 3a, 3b. In other words, the mixing device 201 is a device that mixes thin film material gases generated by vaporizing the first thin film forming material in the vaporization device 40a of the first vaporization section 3a and thin film material gases generated by vaporizing the second thin film forming material in the vaporization device 40b of the second vaporization section 3b.

5, the mixing device 201 is provided in the middle of the supply flow paths 15a and 15b connecting the film forming unit 2 and the vaporizing units 3a and 3b. Specifically, the mixing device 201 is located upstream of the on-off valve 25 and downstream of the on-off valves 26a, 99a, 26b, and 99b.
The supply flow passage 15a is made up of supply paths 20, 202, 203a, and 22a, and the supply flow passage 15b is made up of supply paths 20, 202, 203b, and 22b. That is, the supply paths 20 and 202 are a common path shared by the supply flow passages 15a and 15b.

Next, we will explain the flow of the thin film material gas generated in each vaporization section 3a, 3b in the deposition device 200.

The first thin film material gas generated in vaporizer 40 a of vaporizer 3 a passes through supply path 22 a , and is merged with the carrier gas supplied from gas supply unit 41 a in supply path 203 a , and reaches mixer 201 .
Similarly, the second thin film material gas generated in vaporizer 40 b of vaporizer 3 b passes through supply path 22 b , merges with the carrier gas supplied from gas supply unit 41 b in supply path 203 b , and reaches mixer 201 .
The first thin film material gas and the second thin film material gas are mixed in a mixing device 201, and pass through supply paths 202, 20 as a film formation gas to reach the deposition head 12, where they are sprayed onto the substrate 100 held by the substrate holding section 11 in the film formation chamber 10.

According to the deposition device 200 of the second embodiment, it has multiple vaporizers 3a, 3b, and the thin film material gases generated in each vaporizer 3a, 3b are mixed in a mixer 201 and sprayed onto the substrate 100 as a film-forming gas. Therefore, even when multiple thin film forming materials with different boiling points or sublimation points (e.g., an organic material and a metal material) are co-deposited, the thin film forming materials are less likely to deteriorate by producing thin film material gases in the different vaporizers 3a, 3b.

In the above embodiment, the film-forming section 2 is composed of one film-forming chamber 10, but the present invention is not limited to this. The film-forming section 2 may be composed of multiple film-forming chambers 10. By providing multiple film-forming chambers 10 and supplying film-forming gas to each film-forming chamber 10 from one vaporization section 3, film formation on the substrate 100 can be carried out simultaneously in each film-forming chamber 10, thereby improving productivity.

In the above embodiment, the material supply unit 52 supplies the carrier gas together with the thin film forming material to the material supply piping unit 55, but the present invention is not limited to this. Only the thin film forming material may be supplied from the material supply unit 52 to the material supply piping unit 55.

In the above embodiment, the second filter member 59 is provided in the material vaporizing section 60, but the present invention is not limited to this. It may be provided in a portion between the material vaporizing section 60 and the vaporizing side gas supply section 54. For example, the second filter member 59 may be provided in the gas supply piping section 56.

In the above embodiment, the vaporization chamber 51, the first piping section 90, and the second piping section 91 are all cylindrical, but the present invention is not limited to this. As long as the thin film forming material, thin film material gas, and carrier gas can flow through them, they may have other shapes. For example, they may be polygonal tubular.

In the above embodiment, the inner diameter of the first piping section 90 and the inner diameter of the second piping section 91 are different, but the present invention is not limited to this. The inner diameter of the first piping section 90 and the inner diameter of the second piping section 91 may be the same size.

In the above embodiment, the thin film forming material is mainly vaporized on the second filter member 59, but the present invention is not limited to this. The thin film forming material may be vaporized while being suspended in the material vaporizing section 60. In this case, the second filter member 59 does not need to be provided.

As long as the above-described embodiments fall within the technical scope of the present invention, the components may be freely substituted or added between the various embodiments.

1,200 Vapor deposition device 10 Film formation chamber 15, 15a, 15b Supply flow path 40, 40a, 40b Vaporization device 52 Material supply unit 54 Vaporization side gas supply unit (carrier gas supply unit)
55 Material supply piping section 56 Gas supply piping section (carrier gas supply piping section)
58 First filter member 59 Second filter member 60 Material vaporizing section 61 Gas exhaust section 67 Lower space (space)
70 Vacuum chamber 72 Material supply device 73 Material introduction section 82 Material discharge section 100 Base material

Claims (10)

The gas supply system includes a material vaporizer, a material supply unit, a material supply pipe, a carrier gas supply unit, a carrier gas supply pipe, a gas exhaust unit, and a first filter member;
the material supply unit is connected to an upper portion of the material vaporization unit via the material supply piping unit and is capable of supplying a solid thin film forming material to the material vaporization unit;
the carrier gas supply unit is connected to a lower portion of the material vaporization unit via the carrier gas supply piping unit, and is capable of supplying a carrier gas having a temperature equal to or higher than the boiling point or sublimation point of the thin film forming material from the lower portion of the material vaporization unit upward ;
the material vaporization unit vaporizes the thin film forming material supplied from the material supply unit and dropping therefrom by the carrier gas supplied upward from the carrier gas supply unit to form a thin film material gas, and is capable of supplying the thin film material gas to the gas exhaust unit side;
The first filter member is provided between the material vaporization section and the gas exhaust section, and allows the thin film material gas in the material vaporization section to move toward the gas exhaust section, while restricting the movement of the thin film forming material toward the gas exhaust section. 2. The vaporization apparatus according to claim 1 , wherein the material vaporizing section is cylindrical and has an opening area in a cross section perpendicular to a central axis thereof larger than an opening area in a cross section perpendicular to a central axis of the material supply pipe section. The gas supply system includes a material vaporizer, a material supply unit, a material supply pipe, a carrier gas supply unit, a carrier gas supply pipe, a gas exhaust unit, and a first filter member;
the material supply unit is connected to an upper portion of the material vaporization unit via the material supply piping unit and is capable of supplying a solid thin film forming material to the material vaporization unit;
the carrier gas supply unit is connected to a lower portion of the material vaporization unit via the carrier gas supply piping unit and is capable of supplying a carrier gas having a temperature equal to or higher than a boiling point or a sublimation point of the thin film forming material to the material vaporization unit;
the material vaporization unit vaporizes the thin film forming material supplied from the material supply unit by the carrier gas supplied from the carrier gas supply unit to form a thin film material gas, and is capable of supplying the thin film material gas to the gas exhaust unit side;
the first filter member is provided between the material vaporizing section and the gas exhaust section, and allows the thin film material gas in the material vaporizing section to move toward the gas exhaust section, and restricts the thin film material from moving toward the gas exhaust section;
a second filter member provided within the material vaporization section or between the material vaporization section and the carrier gas supply section , for restricting movement of the thin film forming material within the material vaporization section toward the carrier gas supply section; the second filter member is provided so as to divide the interior of the material vaporizing portion into upper and lower portions,
The vaporization device according to claim 3 , wherein the material vaporization section is capable of vaporizing the thin film forming material on the second filter member to form the thin film material gas. the second filter member is provided so as to divide the interior of the material vaporizing portion into upper and lower portions,
The vaporization apparatus according to claim 3 , wherein the material vaporization section has a space between the second filter member and the carrier gas supply pipe section. The gas supply system includes a material vaporizer, a material supply unit, a material supply pipe, a carrier gas supply unit, a carrier gas supply pipe, a gas exhaust unit, and a first filter member;
the material supply unit is connected to an upper portion of the material vaporization unit via the material supply piping unit and is capable of supplying a solid thin film forming material to the material vaporization unit;
the carrier gas supply unit is connected to a lower portion of the material vaporization unit via the carrier gas supply piping unit and is capable of supplying a carrier gas having a temperature equal to or higher than the boiling point or sublimation point of the thin film forming material to the material vaporization unit;
the material vaporization unit vaporizes the thin film forming material supplied from the material supply unit by the carrier gas supplied from the carrier gas supply unit to form a thin film material gas, and is capable of supplying the thin film material gas to the gas exhaust unit side;
the first filter member is provided between the material vaporizing section and the gas exhaust section, and allows the thin film material gas in the material vaporizing section to move toward the gas exhaust section, and restricts the thin film material from moving toward the gas exhaust section;
The gas exhaust section is provided so as to surround the periphery of the material supply pipe section. The gas supply system includes a material vaporizer, a material supply unit, a material supply pipe, a carrier gas supply unit, a carrier gas supply pipe, a gas exhaust unit, and a first filter member;
the material supply unit is connected to an upper portion of the material vaporization unit via the material supply piping unit and is capable of supplying a solid thin film forming material to the material vaporization unit;
the carrier gas supply unit is connected to a lower portion of the material vaporization unit via the carrier gas supply piping unit and is capable of supplying a carrier gas having a temperature equal to or higher than the boiling point or sublimation point of the thin film forming material to the material vaporization unit;
the material vaporization unit vaporizes the thin film forming material supplied from the material supply unit by the carrier gas supplied from the carrier gas supply unit to form a thin film material gas, and is capable of supplying the thin film material gas to the gas exhaust unit side;
the first filter member is provided between the material vaporizing section and the gas exhaust section, and allows the thin film material gas in the material vaporizing section to move toward the gas exhaust section, and restricts the thin film material from moving toward the gas exhaust section;
the material vaporizing portion is cylindrical;
The thin film forming material is in a powder form,
An evaporation device that satisfies the following formula (1).

In addition, F represents the flow rate of the carrier gas [ ^m3 /s], d represents the inner diameter of the material vaporization section [m], Dp represents the maximum particle diameter of the thin film forming material [m], m represents the weight of the thin film forming material [kg], g represents the gravitational acceleration [m/ ^s2 ], and μ represents the viscosity coefficient of the carrier gas [Pa·s]. The gas supply system includes a material vaporizer, a material supply unit, a material supply pipe, a carrier gas supply unit, a carrier gas supply pipe, a gas exhaust unit, and a first filter member;
the material supply unit is connected to an upper portion of the material vaporization unit via the material supply piping unit and is capable of supplying a solid thin film forming material to the material vaporization unit;
the carrier gas supply unit is connected to a lower portion of the material vaporization unit via the carrier gas supply piping unit and is capable of supplying a carrier gas having a temperature equal to or higher than the boiling point or sublimation point of the thin film forming material to the material vaporization unit;
the material vaporization unit vaporizes the thin film forming material supplied from the material supply unit by the carrier gas supplied from the carrier gas supply unit to form a thin film material gas, and is capable of supplying the thin film material gas to the gas exhaust unit side;
the first filter member is provided between the material vaporizing section and the gas exhaust section, and allows the thin film material gas in the material vaporizing section to move toward the gas exhaust section, and restricts the thin film material from moving toward the gas exhaust section;
the material supply piping section includes a first piping section and a second piping section arranged from the material supply section side toward the material vaporizing section side,
An evaporation apparatus, wherein an inner diameter of the second piping section is larger than an inner diameter of the first piping section. The gas supply system includes a material vaporizer, a material supply unit, a material supply pipe, a carrier gas supply unit, a carrier gas supply pipe, a gas exhaust unit, and a first filter member;
the material supply unit is connected to an upper portion of the material vaporization unit via the material supply piping unit and is capable of supplying a solid thin film forming material to the material vaporization unit;
the carrier gas supply unit is connected to a lower portion of the material vaporization unit via the carrier gas supply piping unit and is capable of supplying a carrier gas having a temperature equal to or higher than a boiling point or a sublimation point of the thin film forming material to the material vaporization unit;
the material vaporization unit vaporizes the thin film forming material supplied from the material supply unit by the carrier gas supplied from the carrier gas supply unit to form a thin film material gas, and is capable of supplying the thin film material gas to the gas exhaust unit side;
the first filter member is provided between the material vaporizing section and the gas exhaust section, and allows the thin film material gas in the material vaporizing section to move toward the gas exhaust section, and restricts the thin film material from moving toward the gas exhaust section;
the material supply unit has a material supply device that temporarily stores the thin film forming material in a vacuum chamber, and a material introduction unit that introduces the thin film forming material toward the material supply piping unit,
the material supply device has a material discharge section above the material introduction section, and is capable of discharging a predetermined amount of the thin film forming material from the material discharge section;
The thin film forming material falls from the material discharge portion toward the material introduction portion, and the thin film forming material is introduced from the material introduction portion into the material supply pipe portion . A vaporizer according to any one of claims 1 to 9, a film deposition chamber, and a supply flow path connecting the vaporizer and the film deposition chamber,
A deposition apparatus in which a deposition gas containing the thin film material gas is sprayed onto a substrate in the deposition chamber to form a film.

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