JP7603406B2 - Film forming equipment - Google Patents

Description

The present invention relates to a film forming apparatus.

In the manufacturing process of various products such as semiconductors, displays, and optical discs, film deposition may be performed on workpieces such as wafers and glass substrates. For components such as smartphones, TVs, HUDs (Head Up Displays), and projectors, an AR coat (anti-reflection coating) is deposited to suppress surface reflection. Band pass filters that are used in spectroscopic analysis and optical communications and allow only certain light to pass through, and cold mirrors used as reflectors for lasers, UV lamps, and in-vehicle sensors are formed by film deposition.

There are various types of deposition equipment for film formation processing, one of which is a deposition equipment using plasma. In a deposition equipment using plasma, a target made of the film material source is placed in a deposition chamber, an inert gas is introduced into the deposition chamber, and a direct current voltage is applied. When ions of the inert gas that has been converted into plasma collide with the target, the material that constitutes the target is knocked out as atomic, molecular, or cluster-like particles (hereinafter also referred to as sputter particles). The sputter particles are deposited on a workpiece facing the target in the deposition chamber. Some deposition equipment has a film processing chamber in addition to the deposition chamber, and causes a chemical reaction such as oxidation or nitridation of the film formed in the deposition chamber.

A certain film thickness is necessary for the film on the workpiece to fully perform the required function. A known method of achieving the target film thickness is to repeatedly form thin films on the workpiece to achieve the overall target film thickness. A film-forming device that stacks thin films has a rotating table that can rotate around the film-forming chamber. The workpiece is placed on the rotating table, and as the rotating table rotates, the workpiece passes through the film-forming chamber multiple times, with a film being built up with each pass. If a film-processing chamber is included, the workpiece passes through the film-forming and film-processing chambers multiple times, with film formation and film processing being repeated with each pass.

Conventionally, the deposition time required to reach the target film thickness is calculated in advance by simulation, calculation, or actual measurement, and deposition is stopped when this deposition time is reached. However, there is a risk of a difference between the target film thickness and the film thickness that is actually deposited. Therefore, a method of depositing a film while detecting the actual film thickness has been proposed (see, for example, Patent Document 1 and Patent Document 2). The proposed deposition device is equipped with a monitoring unit that monitors the film thickness. The monitoring unit has a detection window at a position facing the workpiece, and irradiates the workpiece and the film with light through the detection window. The monitoring unit then detects the light transmitted through the workpiece and the film, and measures the film thickness based on the spectral transmittance. Alternatively, the monitoring unit receives the light reflected from the workpiece and the film through the detection window, and measures the film thickness by analyzing the reflected light.

Patent No. 3744003 Japanese Patent Application Publication No. 04-92444

Generally, the film formation chamber is surrounded by a partition wall. This makes it difficult for sputtered particles knocked out of the target to flow out of the film formation chamber. On the other hand, a gap is provided between the end of the partition wall and the workpiece placement surface of the turntable so that the workpiece can pass through the film formation chamber using the turntable. This means that it is not possible to completely prevent sputtered particles from leaking out of the film formation chamber, and there is a risk that the sputtered particles will reach the detection window of the monitoring unit installed outside the film formation chamber and adhere to the detection window of the monitoring unit.

If the detection window becomes dirty due to the adhesion of sputtered particles, it will no longer be possible to emit the planned amount of light toward the workpiece, and it will also be impossible to obtain a sufficient amount of transmitted or reflected light from the workpiece. Furthermore, the monitoring unit will analyze light that contains information about the adhesion of the detection window. This can lead to errors in the film thickness measurement results, and in the worst case scenario, it may become impossible to detect the film thickness, causing problems with film thickness detection.

The detection window needs to be cleaned regularly to avoid any problems with film thickness detection, but if cleaning is required too frequently, the film deposition device must be stopped more frequently, reducing the production efficiency of the film deposition device.

The present invention has been made to solve the above problems, and its purpose is to provide a film forming device that suppresses contamination of the detection window and improves detection accuracy and productivity.

The film forming apparatus of the present invention includes a conveying unit that has a turntable that rotates by placing a workpiece on a placement surface, and that conveys the workpiece in a circumferential conveying path by rotating the turntable;
The apparatus comprises: a film formation chamber facing the transport path and forming a film on the workpiece; a film formation section disposed in the film formation chamber and having a target which is a material source for the film, and a plasma generator which converts a sputtering gas introduced between the target and the rotating table into plasma, and which sputters the target with the plasma to form a film on the workpiece; and a monitoring section which monitors the thickness of the film on the workpiece, the monitoring section being disposed outside the film formation chamber facing the transport path and having a detection window through which light for detecting film thickness passes, and a light projecting section which irradiates light through the detection window onto the workpiece on which the film has been formed. The present invention is characterized in that it has an analysis unit that detects the thickness of the film based on light reflected from the workpiece or light that passes through the workpiece , and a plate-shaped portion that is arranged around the detection window outside the film formation chamber, faces the installation surface of the rotating table, extends along the installation surface, and prevents sputtered particles leaking from the film formation chamber from reaching the detection window , wherein the detection window faces the installation surface of the rotating table and has an end surface through which light from the light-projecting unit is emitted toward the workpiece, and the end surface is inclined with respect to the central axis of the detection window and faces in the opposite direction to the direction in which the film formation chamber exists .

According to an embodiment of the present invention, a film forming device is provided that can suppress contamination of the detection window and improve detection accuracy and productivity.

1 is a perspective plan view showing a schematic configuration of a film forming apparatus according to an embodiment; 4 is a flowchart showing the operation of the film forming apparatus. FIG. 2 is a cross-sectional view taken along the line AA in FIG. 1, showing the inside of the film forming chamber and the film treatment chamber. 2 is a block diagram showing a configuration of a monitoring unit included in the film forming apparatus. FIG. FIG. 2 is a cross-sectional view taken along line BB in FIG. 1, showing an installation state of the monitoring unit. FIG. 10 is a schematic diagram showing flying particles attempting to pass between a plate-shaped portion and a rotating table. FIG. FIG. 10 is a schematic diagram showing flying particles that have reached the vicinity of a detection window. FIG.

An embodiment of a film forming apparatus according to the present invention will be described in detail with reference to the drawings.

(Entire device)
1 is a perspective plan view showing a schematic configuration of a film forming apparatus 100 according to the present embodiment. The film forming apparatus 100 is an apparatus for forming a film on a workpiece 10. The workpiece 10 is, but is not limited to, for example a glass substrate or a resin substrate. The film formed on the workpiece 10 by the film forming apparatus 100 is a compound film such as an oxide or nitride film. The film forming apparatus 100 includes a chamber 20, a transport unit 30, a film forming chamber 4, a film treatment chamber 5, a monitoring section 6, a load lock unit 70, and a control device 80.

The chamber 20 is a cylindrical container that can be evacuated. The transport unit 30 has a rotating table 31 inside the chamber 20 that is concentric with the chamber 20. The workpiece 10 that is brought in from the load lock unit 70 is placed on the rotating table 31. The rotating table 31 transports the workpiece 10 in a circular manner. The rotating table 31 moves the workpiece 10 along the transport path L, which is a circular trajectory.

The chamber 20 is divided into a plurality of compartments. The film-forming chamber 4, the film treatment chamber 5, and the monitoring compartment 6 are assigned to each compartment in the circumferential direction of the chamber 20 in this order, and face the transport path L of the work 10. The film-forming chambers 4 may be arranged in a continuous manner. The film-forming chamber 4 is a compartment separated by a partition wall 22, and the film treatment chamber 5 is a compartment separated by a cylindrical body 51. The monitoring compartment 6 is a compartment separated by the partition wall 22 located most upstream in the transport direction and the side wall of the cylindrical body 51 located downstream in the transport direction. In other words, the monitoring compartment 6 is a compartment between the film-forming chamber 4 located upstream in the transport direction and the film treatment chamber 5, and is a compartment located downstream in the transport direction from the film treatment chamber 5. The work 10 is repeatedly circulated between the film-forming chamber 4, the film treatment chamber 5, and the monitoring compartment 6 by the transport unit 30.

The film formation chamber 4 is a section in which the film formation unit 40 is located, and forms a film on the workpiece 10. The film formation unit 40 uses plasma to knock out sputter particles from a target 42 composed of the film material source, and deposits them on the workpiece 10 to form a film. The film treatment chamber 5 is a section in which the film treatment unit 50 is located, and performs film treatment on the film formed on the workpiece 10 that has passed through the film formation chamber 4 by the transport unit 30. The film treatment unit 50 generates plasma in a process gas, and produces a compound film by chemically reacting ions in the plasma with the film.

For example, two film-forming chambers 4 are arranged consecutively in the transport direction. The materials of the targets 42 arranged in the two film-forming chambers 4 may be different. This allows two different types of films to be laminated on the workpiece 10. Note that there may be only one film-forming chamber 4, or three or more may be arranged consecutively. In addition to placing targets 42 of different materials in each of the multiple film-forming chambers 4, targets 42 of the same type of material may also be placed.

In the monitoring section 6, the thickness of the compound film formed on the workpiece 10 is optically measured. Any known film thickness detection method can be applied as long as it is an optical measurement method. For example, the film thickness is detected by shining light on the workpiece 10 and detecting the reflected light from the workpiece 10 based on, for example, the peak-valley method (PV method). In the monitoring section 6, a detection window 65 is installed facing the rotating table 31 (see FIG. 3). The detection window 65 is a light-transmitting member such as quartz or sapphire. Light is irradiated through this detection window 65 onto the workpiece 10 passing directly below the detection window 65, and the reflected light from the workpiece 10 is obtained through this detection window 65. In other words, this detection window 65 separates the space in which the workpiece 10 exists from the space in which various optical components are arranged, while ensuring the passage of light between the two spaces.

The control device 80 is a processing device including a PLC (Programmable Logic Controller) and a CPU (Central Processing Unit), and stores a program that describes the control contents. This control device 80 controls each component of the film forming apparatus 100, and operates the film forming unit 40, the film processing unit 50, and the rotating table 31 until the film thickness on the workpiece 10 detected in the monitoring area 6 reaches the target film thickness.

Figure 2 is a flow chart showing the overall operation of the film forming apparatus 100 controlled by the control device 80. The workpiece 10 is loaded into the chamber 20 from the load lock unit 70 (step S01). The pressure inside the chamber 20 is reduced to a predetermined pressure (step S02). After the pressure inside the chamber 20 is reduced, the control device 80 rotates the rotary table 31 on which the workpiece 10 is placed (step S03).

When the film forming apparatus 100 has two film forming chambers 4, the control device 80 operates the film forming unit 40 of one film forming chamber 4 and stops the film forming unit 40 of the other film forming chamber 4 (step S04). In the film forming chamber 4 that is in operation, a film is formed on the workpiece 10 (step S05). For example, a silicon (Si) target 42 is installed in one film forming chamber 4, and a silicon film is formed on the workpiece 10. Each time the workpiece 10 passes through the film forming chamber 4 that is in operation, the film on the surface of the workpiece 10 becomes thicker. The workpiece 10 that has been formed in the film forming chamber 4 that is in operation heads toward the film processing chamber 5 each time it passes through the film forming chamber 4, and the film on the workpiece 10 is processed (step S06). For example, plasma is generated in a process gas containing oxygen gas, and the silicon film is oxidized by colliding oxygen ions with the silicon film.

When the workpiece 10 passes through the film-forming chamber 4 and film-treatment chamber 5 in operation and enters the monitoring section 6, the film thickness of the compound film formed on the workpiece 10 is detected in the monitoring section 6 (step S07). The control device 80 compares the detected film thickness with the target film thickness (step S08). The target film thickness is stored in advance by the control device 80. If the detected film thickness does not reach the target film thickness (step S08, No), the control device 80 maintains the rotation of the turntable 31 and repeats steps S05 to S08 without changing the currently operating film-forming unit 40.

When the detected film thickness reaches the target film thickness (step S08, Yes), if there is a film forming unit 40 to be operated next, i.e., a film forming unit 40 that has not yet been operated (step S09, Yes), the control device 80 stops the operation of the film forming unit 40 in the current film forming chamber 4 and operates the film forming unit 40 in the next film forming chamber 4 (step S10). Then, steps S05 to S08 are repeated, and if the detected film thickness reaches the target film thickness (step S08, Yes), the control device 80 ends the film formation and film processing on the workpiece 10. On the other hand, if there is no film forming unit 40 to be operated next (step S09, No), the control device 80 performs a process to end the film formation and film processing on the workpiece 10.

For example, a niobium (Nb) target 42 is installed in the other film-forming chamber 4, and a niobium film is formed on the workpiece 10. In the film processing chamber 5, oxygen ions are collided with the niobium film to oxidize the niobium film. As a result, a silicon oxide film of the target thickness is formed on the lower layer of the workpiece 10, and a niobium oxide film of the target thickness is formed on the upper layer of the silicon oxide film. The film-forming chambers 4 are not limited to two chambers, and three or more film-forming chambers 4 may be arranged. Each time the control device 80 detects in the monitoring section 6 that the compound film has reached the target thickness, it is sufficient to switch the film-forming chamber 4 to be operated and repeat steps S05 to S08.

(Chamber)
The chamber 20 will be described in more detail. As shown in Fig. 3, the chamber 20 is surrounded by a disk-shaped ceiling 20a, a disk-shaped inner bottom surface 20b, and an annular inner peripheral surface 20c. The chamber 20 is provided with an exhaust port 21. An exhaust unit 90 is connected to the exhaust port 21. The exhaust unit 90 has piping, a pump, a valve, etc. (not shown). The inside of the chamber 20 is depressurized to a vacuum by exhausting air by the exhaust unit 90 through the exhaust port 21.

(Transportation section)
The transport unit 30 will be described in more detail. The transport unit 30 has a rotating table 31 and a motor 32. As shown in FIG. 3, the rotating table 31 of the transport unit 30 has a disk shape and is expanded to a large extent so as not to contact the inner peripheral surface 20c. The transport unit 30 is provided with a motor 32 that rotates the rotating table 31, and the motor 32 rotates the rotating table 31 continuously at a predetermined rotation speed with the circular center of the rotating table 31 as the rotation axis. In this embodiment, the motor 32 rotates the rotating table 31 counterclockwise as shown in FIG. 1. As a result, the transport unit 30 circulates and transports the workpiece 10 along the transport path L, which is a circumferential trajectory. That is, the transport unit 30 circulates and transports the workpiece 10 so as to repeatedly pass through the film forming chamber 4, the film processing chamber 5, and the monitoring section 6 in this order.

The rotating table 31 is provided with holding parts 33. The holding parts 33 are grooves, holes, protrusions, jigs, holders, etc. that are arranged at equal circumferential positions on the installation surface 311 of the rotating table 31, and hold the tray 34 on which the workpieces 10 are placed by a mechanical chuck or an adhesive chuck. The workpieces 10 are arranged, for example, in a matrix on the tray 34, and six holding parts 33 are arranged on the rotating table 31 at 60° intervals.

(Load lock section)
The load lock unit 70 is a device that, while maintaining the vacuum of the chamber 20, transports the tray 34 carrying the unprocessed workpieces 10 from the outside into the chamber 20 by a transport means not shown, and transports the tray 34 carrying the processed workpieces 10 out of the chamber 20. Since a known structure can be applied to this load lock unit 70, a description thereof will be omitted.

(Film formation chamber)
The film formation chamber 4 will be described in more detail. As shown in Fig. 3, a film formation section 40 is disposed in the film formation chamber 4. The film formation section 40 includes a sputtering source and a plasma generator. The sputtering source includes a target 42, a backing plate 43, and an electrode 44. The plasma generator includes a power supply section 46 and a sputtering gas inlet section 49.

The target 42 is a plate-shaped member and is provided at a distance on the transport path L of the workpiece 10 placed on the rotating table 31. The surface of the target 42 is supported on the ceiling 20a of the chamber 20 so as to face the workpiece 10 placed on the rotating table 31. For example, three targets 42 are installed, and the three targets 42 are provided at positions aligned on the vertices of a triangle in a plan view (see FIG. 1).

The backing plate 43 is a support member that holds the targets 42. This backing plate 43 holds each target 42 individually. The electrode 44 is a conductive member for applying power to each target 42 individually from outside the chamber 20, and is electrically connected to the targets 42. The power applied to each target 42 can be changed individually. In addition, the sputtering source is appropriately equipped with magnets, cooling mechanisms, etc. as necessary.

The power supply unit 46 is, for example, a DC power supply that applies a high voltage, and is electrically connected to the electrode 44. The power supply unit 46 applies power to the target 42 through the electrode 44. The rotating table 31 is at the same potential as the grounded chamber 20, and a potential difference occurs when a high voltage is applied to the target 42 side. The power supply unit 46 can also be an RF power supply to perform high-frequency sputtering.

The sputtering gas introduction section 49 has a pipe 48 and a gas inlet 47, and is connected to a supply source of sputtering gas G1, such as a cylinder, which is a facility in a factory or the like. The supply source of sputtering gas G1 may be held on the film forming apparatus 100 side. The pipe 48 of the sputtering gas introduction section 49 is connected to the supply source of sputtering gas G1, and extends airtightly through the chamber 20 into the interior of the chamber 20, with its end opening as a gas inlet 47. The gas inlet 47 opens between the rotating table 31 and the target 42, and introduces the sputtering gas G1 for film formation into the processing space 41 formed between the rotating table 31 and the target 42. An inert gas can be used as the sputtering gas G1, and argon gas or the like is preferable.

As shown in Figures 1 and 3, the inside of the chamber 20 is divided by a partition wall 22. The partition wall 22 is a rectangular wall plate arranged radially from the center of the cylindrical shape, and extends from the ceiling 20a toward the inner bottom surface 20b, but does not reach the inner bottom surface 20b. In other words, a cylindrical space is secured on the inner bottom surface 20b side. The rotating table 31 is disposed in this cylindrical space. The lower end of the partition wall 22 faces the mounting surface 311 of the rotating table 31 on which the workpiece 10 is placed, with a gap provided for the workpiece 10 placed on the rotating table 31 to pass through. The partition wall 22 divides the film formation chamber 4.

In this type of film forming section 40, when sputtering gas G1 is introduced from the sputtering gas inlet 49 and the power supply 46 applies a high voltage to the target 42 through the electrode 44, the sputtering gas G1 introduced into the processing space 41 formed between the rotating table 31 and the target 42 turns into plasma, generating active species such as ions. The ions in the plasma collide with the target 42, knocking out the material that constitutes the target 42 as sputter particles.

The workpiece 10 passes through this processing space 41 while being circulated by the rotating table 31. The sputtered particles are deposited on the workpiece 10 as the workpiece 10 passes through the processing space 41, and a film made of the sputtered particles is formed on the workpiece 10. The workpiece 10 is circulated by the rotating table 31 and passes through this processing space 41 repeatedly to form a film. The thickness of the film deposited each time it passes through the film forming section 40 depends on the processing rate of the film processing section 50, but it is preferable that it is a thin film of about 1 to 2 atoms (5 nm or less), for example. By circulating and transporting the workpiece 10 multiple times, the thickness of the film increases, and a film of a predetermined thickness is formed on the workpiece 10.

(Membrane treatment chamber)
The film processing chamber 5 will be described in more detail. As shown in Fig. 3, the film processing section 50 of the film processing chamber 5 includes a plasma generator including a cylindrical body 51, a window member 52, an antenna 53, an RF power source 54, a matching box 55, and a process gas introduction section 58. The film processing section 50 also includes a process gas introduction section 58. The process gas introduction section 58 has a pipe 57 and a gas introduction port 56, and is connected to a supply source of a process gas G2 such as a cylinder, which is a facility in a factory. The supply source of the process gas G2 may be held on the film forming apparatus 100 side.

As shown in Figs. 1 and 3, the cylindrical body 51 is a cylinder with a rounded rectangular cross section and has an opening. The cylindrical body 51 is fitted into the ceiling 20a of the chamber 20 so that the opening faces the turntable 31 side and protrudes into the internal space of the chamber 20. The cylindrical body 51 is made of the same material as the turntable 31. The window member 52 is a flat plate of a dielectric material such as quartz having a shape similar to the horizontal cross section of the cylindrical body 51. The window member 52 is provided to close the opening of the cylindrical body 51 and separates the processing space 59 into which the process gas G2 containing oxygen gas in the chamber 20 is introduced from the inside of the cylindrical body 51. The processing space 59 is a space formed between the turntable 31 and the inside of the cylindrical body 51 in the film processing section 50. The workpiece 10 circulated and transported by the turntable 31 repeatedly passes through this processing space 59 to perform the oxidation process. The window member 52 may be a dielectric material such as alumina, or a semiconductor such as silicon.

The antenna 53 is a conductor wound into a coil shape, and is disposed in the internal space of the cylindrical body 51, which is isolated from the processing space 59 in the chamber 20 by the window member 52. An electric field is generated by passing an alternating current through the antenna 53. It is preferable that the antenna 53 is disposed near the window member 52 so that the electric field generated by the antenna 53 is efficiently introduced into the processing space 59 through the window member 52. An RF power supply 54 that applies a high frequency voltage is connected to the antenna 53. A matching box 55, which is a matching circuit, is connected in series to the output side of the RF power supply 54. The matching box 55 stabilizes the plasma discharge by matching the impedance on the input side and the output side.

The piping 57 of the process gas introduction section 58 is connected to a supply source of the process gas G2, and extends airtightly through the chamber 20 into the interior of the chamber 20, with its end opening as a gas introduction port 56. The gas introduction port 56 opens into the processing space 59 between the window member 52 and the rotating table 31, and introduces the process gas G2. The process gas G2 contains, for example, oxygen or nitrogen. In addition to oxygen gas or nitrogen gas, the process gas G2 may contain an inert gas such as argon gas.

In such a film processing section 50, a high-frequency voltage is applied to the antenna 53 from the RF power supply 54. This causes a high-frequency current to flow through the antenna 53, generating an electric field due to electromagnetic induction. The electric field is generated in the processing space 59 through the window member 52, generating an inductively coupled plasma of the process gas G2. At this time, the process gas G2 is also ionized, and the ions collide with the film on the workpiece 10 and bond with the atoms that make up the film. If the process gas G2 contains oxygen, the film processing section 50 oxidizes the film on the workpiece 10. If the process gas G2 contains nitrogen, the film processing section 50 nitrides the film on the workpiece 10.

(Surveillance area)
The monitoring of the film thickness will be described in more detail. FIG. 4 is a block diagram showing the configuration of the monitoring unit 60 provided in the film forming apparatus 100. As shown in FIG. 4, the film forming apparatus 100 is provided with a monitoring unit 60 for detecting the film thickness formed on the workpiece 10. The monitoring unit 60 includes a detection window 65 arranged in the monitoring section 6 as a component, irradiates light onto the workpiece 10 through the detection window 65, acquires reflected light from the workpiece 10 through the detection window 65, and analyzes the reflected light to detect the film thickness. The control device 80 compares the film thickness detected by the monitoring unit 60 with the target film thickness, judges whether the film formation should be continued or ended, and controls each element of the film forming apparatus 100 based on the judgment result. In addition to the detection window 65, the monitoring unit 60 includes a light projection unit 62, a transmission unit 64, a spectroscopic unit 63, and an analysis unit 61.

The light-projecting unit 62 is a light source. The light emitted by this light-projecting unit 62 passes through the detection window 65 and reaches the workpiece 10. For example, the wavelength band of the light is in the range of 200 nm to 800 nm, and ultraviolet light with a wavelength of 400 nm or less may be emitted. Examples of this light-projecting unit 62 include a xenon lamp, a mercury-xenon lamp, and a halogen lamp. A mercury-xenon lamp can irradiate light in the ultraviolet region and can increase the luminous flux.

The spectroscopic unit 63 obtains the spectrum of the reflected light by splitting the reflected light from the workpiece 10 that has passed through the detection window 65 into light of each wavelength. Typically, the spectroscopic unit 63 is a prism or a diffraction grating. The analysis unit 61 analyzes the spectrum of the reflected light that has passed through the spectroscopic unit 63 to detect the film thickness on the workpiece 10. The analysis unit 61 includes light-receiving elements such as a CCD or CMOS that individually receive the light of each wavelength split by the spectroscopic unit 63, and a processor such as a CPU.

The analysis unit 61 can apply various known film thickness detection methods as long as they are optical measurement methods, for example, the peak valley method (PV method) to detect the film thickness. There is an optical path difference between the reflected light from the film surface and the reflected light from the surface of the workpiece 10. When this optical path difference is an integer multiple of a certain wavelength, among the interference light of the reflected light from the surface of the workpiece 10 and the reflected light from the film surface, the light of that wavelength component is in phase and is added in a constructive direction, and the light of the wavelength component that is 1/2 wavelength out of phase is subtracted in a destructive direction. The analysis unit 61 identifies these wavelengths and detects the film thickness from 2nd = iλ (d is the film thickness, i is an integer, λ is the identified wavelength).

The transmission unit 64 is disposed between the light-projecting unit 62 and the detection window 65, and between the detection window 65 and the spectroscopic unit 63. This transmission unit 64 guides the light of the light-projecting unit 62 incident from one end toward the detection window 65 at the other end. The transmission unit 64 also receives reflected light from the workpiece 10 that has passed through the detection window 65 at the other end, and guides the light toward the spectroscopic unit 63. An example of such a transmission unit 64 is an optical fiber, but is not limited to this, and may be an optical system including various optical components such as lenses and mirrors.

Figure 5 is a schematic diagram showing the installation of the monitoring unit 60. As shown in Figure 5, in the monitoring section 6, a cylindrical housing 67 is attached to the ceiling 20a of the chamber 20. The housing 67 extends from the ceiling 20a toward the installation surface 311 on which the workpiece 10 of the rotating table 31 is placed. The open end of the housing 67 on the installation surface 311 side is closed by a holder 66. The detection window 65 is held in this holder 66 via a sealing member. By being held in the holder 66, the detection window 65 faces the installation surface 311 of the rotating table 31 while being spaced apart from the installation surface 311.

The detection window 65 faces the trajectory of the workpiece 10 moving on the rotating table 31 on the installation surface 311. In particular, in order to obtain a quantity of reflected light that provides a good S/N ratio, it is preferable to position the detection window 65 on the inner circumference side of the rotating table 31. That is, the housing 67 is attached to the inner circumference side of the rotating table 31. The inner circumference side of the rotating table 31 is closer to the center of rotation than the midpoint of the line segment along the radius R from the center of rotation of the rotating table 31 to the outer periphery. The circumferential speed is slow on the inner circumference side of the rotating table 31. Therefore, the workpiece 10 continues to stay directly under the detection window 65 for a time longer than the time required to obtain a quantity of reflected light that provides a good S/N ratio.

The transmission unit 64 is disposed within the housing 67, with its end facing the detection window 65. This transmission unit 64 passes through the housing 67 and is pulled out from the ceiling 20a of the chamber 20 to the outside. With the transmission unit 64 and detection window 65, the light transmitted by the transmission unit 64 passes through the detection window 65 and heads toward the workpiece 10 moving directly below the detection window 65, and the light headed toward the workpiece 10 is reflected by the surface of the workpiece 10 or a film formed on the workpiece 10, passes through the detection window 65, and is transmitted by the transmission unit 64.

Figure 6 is an enlarged view of the monitoring section 6. As shown in Figures 5 and 6, a plate-shaped portion 68 is attached around the detection window 65. The plate-shaped portion 68 is a wide ring-shaped plate centered around the detection window 65. The plate-shaped portion 68 has an opposing surface 681 that faces the installation surface 311 of the rotating table 31. The opposing surface 681 extends around the detection window 65 from the side peripheral surface of the holder 66 as a base end, and extends along the installation surface 311 of the rotating table 31. The plate-shaped portion 68 preferably extends parallel to the installation surface 311. As long as the plate-shaped portion 68 is unlikely to bend, there is no particular limitation on the material or thickness of the plate-shaped portion 68. For example, an aluminum plate having a thickness of 5 mm may be used as the plate-shaped portion 68.

The plate-shaped portion 68 is disposed at a distance H from the deposition surface of the workpiece 10 mounted on the rotating table 31. The distance H is set to a dimension at least such that the passing workpiece 10 does not come into contact with the plate-shaped portion 68, but it is preferable that the distance is as narrow as possible, and can be set to, for example, 5 mm. The distance H can be set to the same distance between the end of the partition wall 22 on the rotating table 31 side and the deposition surface of the workpiece 10. The length D of the plate-shaped portion 68, i.e., the width in the ring radial direction from the inner peripheral edge to the outer peripheral edge of the plate-shaped portion 68, is equal to or greater than the mean free path of the sputter particles, i.e., the molecules of the material that constitutes the target.

Furthermore, the opposing surface 681 of the plate-shaped portion 68 preferably has a surface roughness of 4 μm or more and 14 μm or less in arithmetic mean roughness Ra. It is even more preferable that the opposing surface 681 of the plate-shaped portion 68 made of stainless steel (SUS) has a surface roughness of 4 μm or more and 10 μm or less in arithmetic mean roughness Ra. It is even more preferable that the opposing surface 681 of the aluminum plate-shaped portion 68 has a surface roughness of 6 μm or more and 14 μm or less in arithmetic mean roughness Ra. The opposing surface 681 with this surface roughness can be formed, for example, by blasting with an abrasive having a grain size of about #20 or more and #60 or less.

Figure 7 is a schematic diagram showing the function of the plate-shaped portion 68. Flying particles 421 are floating around the detection window 65. The flying particles 421 are, for example, sputtered particles that have leaked out of the film-forming chamber 4 and are floating. Before reaching the detection window 65, the flying particles 421 must pass through a narrow and long space defined by the plate-shaped portion 68 and the installation surface 311 of the rotating table 31. Therefore, many of the flying particles 421 come into contact with the plate-shaped portion 68 before reaching the detection window 65 and are captured by the plate-shaped portion 68. Many of the flying particles 421 are blocked by the plate-shaped portion 68 and cannot reach the detection window 65. In this way, the plate-shaped portion 68 captures the flying particles 421 and suppresses contamination of the detection window 65.

In particular, if the plate-shaped portion 68 has a length D equal to or greater than the mean free path of the flying particles 421, the probability of capturing the flying particles 421 is increased, and the contamination of the detection window 65 is further suppressed. This is because the interval H from the film-forming surface of the workpiece 10 to the plate-shaped portion 68 is very narrow, and even if the flying particles 421 are incident obliquely toward the detection window 65 from the interval H, the possibility of them being captured on the way is increased if the plate-shaped portion 68 has a length equal to or greater than the mean free path. In addition, the length D of the plate-shaped portion 68 is preferably greater than 20 cm, and more preferably 30 cm or more. The inventor confirmed through experiments that when the interval H from the film-forming surface of the workpiece 10 mounted on the rotating table 31 to the plate-shaped portion 68 is 5 mm and the length D of the plate-shaped portion 68 is 30 cm, cleaning of the detection window 65 is not required for at least three months.

In addition, the opposing surface 681 of the plate-shaped portion 68 has a surface roughness of 4 μm or more and 10 μm or less in arithmetic mean roughness Ra. Therefore, the probability that the flying particles 421 that come into contact with the plate-shaped portion 68 will adhere to the opposing surface 681 increases. Furthermore, even if the flying particles 421 do not adhere to the opposing surface 681 of the plate-shaped portion 68, the reflection direction of the flying particles 421 will be different compared to when the opposing surface 681 is smooth. That is, the flying particles 421 that are reflected in a direction other than the detection window 65 will increase. Therefore, the probability that the flying particles 421 that could not be captured by the opposing surface 681 will be reflected toward the detection window 65 will also decrease. Therefore, the opposing surface 681 having a surface roughness of 4 μm or more and 10 μm or less in arithmetic mean roughness Ra can further reduce the flying particles 421 that enter toward the detection window 65.

As will be described with reference to Figures 8 and 9, the flying particles 421 incident on the detection window 65 can be further reduced. Figure 8 is an enlarged view of the vicinity of the detection window 65. As shown in Figure 8, the detection window 65 has an outer end surface 651. The outer end surface 651 is a surface facing the installation surface 311 of the rotating table 31, and is a surface through which light is emitted to the workpiece 10 and into which reflected light from the workpiece 10 is incident. The holder 66 also has an enclosing wall 661 that encloses the entire periphery of the detection window 65. The detection window 65 is fitted into a hole defined by this enclosing wall 661, and is supported all around by the inner circumferential surface of the enclosing wall 661.

The surrounding wall 661 extends toward the installation surface 311 of the turntable 31 so as not to cover the outer end surface 651, and protrudes over the entire circumference toward the installation surface 311 of the turntable 31 beyond the outer end surface 651. In other words, the distance between the end of the surrounding wall 661 and the installation surface 311 is narrower than the distance between the outer end surface 651 and the installation surface 311 of the turntable 31. In other words, the outer end surface 651 is recessed from the tip of the surrounding wall 661.

The outer end surface 651 of the detection window 65 is an inclined surface inclined with respect to the central axis 65A of the detection window 65. The inclined outer end surface 651 faces the direction in which the film-forming chamber 4 exists, that is, the opposite direction to the inner circumference of the turntable 31. In other words, the outer end surface 651 is inclined so as to face the outer circumference of the turntable 31. When the monitoring section 6 and the film-forming chamber 4 are located on the same circumference, the direction away from the film-forming chamber 4 is the direction facing away from the inner circumference of the turntable 31. In order to reduce the area ratio of the outer end surface 651 exposed in the direction from which more flying particles 421 fly, the outer end surface 651 is facing away from the inner circumference of the turntable 31. Therefore, it is preferable that the outer end surface 651 faces in the opposite direction by 180 degrees, but as long as it faces in the opposite direction from the inner circumference of the turntable 31 by even 1 degree based on the radial direction from the center of the chamber 20 to the outside, the outer end surface 651 can be oriented in a direction away from all of the film formation chambers 4, regardless of where the film formation chambers 4 are located on the same circumference. This reduces the area ratio of the outer end surface 651 exposed in the direction from which more of the flying particles 421 are coming.

9 is a schematic diagram showing the positional relationship between the surrounding wall 661 and the outer end surface 651, and the action based on the orientation of the outer end surface 651. As shown in FIG. 9, the probability of the flying particles 421 reaching the vicinity of the detection window 65 without being captured by the plate-shaped portion 68 is not zero. However, the outer end surface 651 of the detection window 65 is recessed within the area surrounded by the surrounding wall 661. Therefore, the path leading to the detection window 65 has a labyrinth structure that starts from the outer edge of the plate-shaped portion 68 and bends directly below the detection window 65. Therefore, even if the flying particles 421 can pass between the plate-shaped portion 68 and the installation surface 311 of the rotating table 31, they cannot reach the detection window 65 unless they can change course toward the detection window 65 by reflection or the like, and the adhesion of the flying particles 421 to the detection window 65 is further suppressed.

However, in order to obtain a sufficient amount of reflected light required for analysis, it is preferable that the light emitted from the detection window 65 is irradiated onto one point on the workpiece 10. If the distance between the detection window 65 and the surface of the workpiece 10 is long, the light will diffuse, so the distance between the detection window 65 and the surface of the workpiece 10 is preferably about 40 mm. In addition, the position of the tip of the surrounding wall 661 is limited to the height at which the workpiece 10 can pass. In that case, the distance by which the outer end face 651 recedes into the inside of the surrounding wall 661 (the distance between the tip of the surrounding wall 661 and the outer end face 651) is preferably a maximum of 40 mm optically.

There may be some flying particles 421 that fly toward the area surrounded by the surrounding wall 661 at a steep angle by repeatedly reflecting between the plate-shaped portion 68 and the installation surface 311 of the rotating table 31. However, the outer end surface 651 is inclined with respect to the central axis 65A of the detection window 65 and faces in the opposite direction to the direction of the film formation chamber 4, which is the source of the flying particles 421. Therefore, the flying particles 421 flying from the film formation chamber 4 side cannot enter the outer end surface 651 unless they face the outer end surface 651 at an angle close to perpendicular toward the area surrounded by the surrounding wall 661, and are captured by the inner surface of the surrounding wall 661. Therefore, adhesion of the flying particles 421 to the detection window 65 is further suppressed. The inner surface of the surrounding wall 661 may also be roughened. If the inner surface is roughened, the probability that the flying particles 421 will be captured by the inner surface of the surrounding wall 661 increases.

8 and 9, the inner end surface 652 of the detection window 65, i.e., the end surface opposite to the outer end surface 651 and facing the internal space of the housing 67, may be perpendicular to the central axis 65A of the detection window 65 or obliquely. Preferably, the inner end surface 652 is parallel to the outer end surface 651 which is inclined with respect to the central axis 65A of the detection window 65. As shown in FIG. 8, the light L1 emitted from the transmission section 64 is parallel to the central axis 65A of the detection window 65, and if the outer end surface 651 and the inner end surface 652 are parallel, when it passes through the detection window 65 and is emitted, it returns parallel to the central axis 65A of the detection window 65 and enters the workpiece 10 perpendicularly. In addition, the reflected light from the workpiece 10 can enter the transmission section 64 by following the same optical path as the light emitted from the transmission section 64.

Moreover, as shown in FIG. 8, if the inner end face 652 is inclined with respect to the central axis 65A of the detection window 65, the light L2 emitted from the transmission section 64 and reflected by the inner end face 652 of the detection window 65 will travel toward, for example, the inner circumferential surface of the housing 67, and will not easily return to the transmission section 64, and will not easily interfere with the reflected light from the surface of the workpiece 10 or the film surface. Since the outer end face 651 is also inclined, the light L3 traveling through the detection window 65 and reflected by the outer end face 651 will also travel toward, for example, the inner circumferential surface of the housing 67 or the inner circumferential surface of the holder 66, and will not easily return to the transmission section 64, and will not easily interfere with the reflected light from the surface of the workpiece 10 or the film surface. Therefore, the accuracy of film thickness detection is improved.

In order to direct the light reflected by the outer end face 651 and the inner end face 652 in a direction other than the direction of incidence on the transmission section 64, it is preferable that the inclination angle of the outer end face 651 and the inner end face 652 is 1.5° or more and 45° or less with respect to the central axis 65A of the detection window 65. If it is within this range, the light reflected by the outer end face 651 and the inner end face 652 is unlikely to return to the transmission section 64.

(effect)
In this manner, the film forming apparatus 100 is provided with a monitoring unit 60 that monitors the film thickness on the workpiece 10. The monitoring unit 60 includes a detection window 65, a light projecting unit 62, and an analysis unit 61. The detection window 65 is disposed on the transport path L of the workpiece 10 by the transport unit 30 and outside the film forming chamber 4, and transmits light for film thickness detection. Such a monitoring unit 60 further includes a plate-shaped portion 68. The plate-shaped portion 68 faces the installation surface 311 of the turntable 31 on which the workpiece 10 is installed, and extends along the installation surface 311 of the turntable 31.

Thereby, a space defined by the plate-shaped portion 68 and the installation surface 311 of the rotating table 31 exists between the film forming portion and the detection window 65. Many of the flying particles 421 passing through this space are captured by the plate-shaped portion 68 before reaching the detection window 65. Therefore, adhesion of the flying particles 421 to the detection window 65 can be suppressed. By suppressing adhesion of the flying particles 421 to the detection window 65, the accuracy of film thickness detection on the workpiece 10 is improved and the frequency of cleaning the detection window 65 is reduced, improving the operating rate of the film forming apparatus 100.

The plate-shaped portion 68 is preferably installed around the detection window 65. By installing it around the detection window 65, the area of the plate-shaped portion 68 required to prevent the flying particles 421 from reaching the detection window 65 can be minimized. However, it is sufficient that the sputtered particles leaking from the film formation chamber 4 are prevented from reaching the detection window 65, and the plate-shaped portion 68 is installed on the route along which the sputtered particles reach the detection window 65. In other words, the plate-shaped portion 68 is only required to be located between the film formation chamber 4 and the detection window 65 on the transport path L.

For example, the plate-shaped portion 68 may be provided at the lower end of the partition wall 22 that defines the film formation chamber 4. In this case, the plate-shaped portion 68 extends from the partition wall 22 as a base end toward the outside of the film formation chamber 4. Alternatively, the plate-shaped portion 68 may be provided at the lower end of the cylindrical body 51 that defines the film treatment chamber 5. In this case, the plate-shaped portion 68 extends from the cylindrical body 51 as a base end toward the outside of the film treatment chamber 5. It may also extend into the monitoring section 6.

In addition, the plate-shaped portion 68 is in the shape of a ring that spreads radially from the entire periphery of the detection window 65, but it is sufficient that the plate-shaped portion 68 is installed on the route along which the sputtered particles reach the detection window 65. In other words, if the direction in which the sputtered particles fly is localized, the plate-shaped portion 68 may spread in the localized direction. For example, in this film forming apparatus 100, if there are no or few flying particles 421 flying from the load lock unit 70 side, the plate-shaped portion 68 may be shaped to extend only toward the film processing chamber 5 side. For example, it may be in the shape of a half moon.

The plate-shaped portion 68 extends along the mounting surface 311 of the rotating table 31 for a length equal to or greater than the mean free path of the molecules of the material that constitutes the target 42. This increases the probability that the incoming particles 421 will come into contact with the plate-shaped portion 68. Therefore, the plate-shaped portion 68 can capture more incoming particles 421 and further suppress adhesion to the detection window 65.

The plate-shaped portion 68 also faces the mounting surface 311 of the rotating table 31 and has an opposing surface with a surface roughness of 4 μm or more and 14 μm or less in arithmetic mean roughness Ra. This prevents the incoming particles 421 from being reflected by the plate-shaped portion 68, increasing the probability that the incoming particles 421 will remain on the plate-shaped portion 68. Therefore, the plate-shaped portion 68 can capture more incoming particles 421 and further prevent them from adhering to the detection window 65.

The detection window 65 faces the installation surface 311 of the rotating table 31 and has an outer end surface 651 through which the light from the light projecting unit 62 is emitted toward the workpiece 10, and the outer end surface 651 is inclined with respect to the central axis 65A of the detection window 65 and faces in the opposite direction to the inner circumference side of the rotating table 31. This reduces the area ratio of the outer end surface 651 exposed in the direction from which the flying particles 421 fly in large numbers, making it difficult for the flying particles 421 to come into contact with the outer end surface 651. Therefore, adhesion to the detection window 65 can be suppressed.

The holder 66 that holds the detection window 65 has an enclosing wall 661 that surrounds the outer end surface 651, and the outer end surface 651 is set back from the end of the enclosing wall 661 that faces the installation surface 311. That is, the holder 66 holds the detection window 66 so that the gap between the end of the enclosing wall 611 and the installation surface 311 is narrower than the gap between the outer end surface 651 and the installation surface 311. As a result, even if the incoming particles 421 can reach the vicinity of the detection window 65, they are blocked by the enclosing wall 661 and have difficulty contacting the outer end surface 651. Therefore, adhesion to the detection window 65 can be suppressed.

The detection window 65 is also positioned on the inner circumference of the rotating table 31. Because the circumferential speed is slow on the inner circumference of the rotating table 31, a sufficient amount of light can be directed onto the workpiece 10. This makes it possible to achieve a good S/N ratio, improving the accuracy of film thickness detection.

In this film forming apparatus 100, the detection window 65 is located downstream of the film processing chamber 5 in the transport direction of the workpiece 10, but this is not limited to this. That is, depending on the film forming apparatus 100, compound particles may be deposited on the workpiece 10 in the film forming chamber 4. For example, a process gas G2 may also be introduced into the processing space 41, and particles knocked out of the target 42 may react with ions in the process gas G2 to form a compound, which may then be deposited on the workpiece 10. In this case, the film processing chamber 5 may be omitted, and the monitoring section 6 is disposed adjacent to the film forming chamber 4. Therefore, the detection window 65 is located downstream of the film forming chamber 4 in the transport direction of the workpiece 10.

The monitoring unit 60 also acquires light reflected from the workpiece 10 through the detection window 65, and uses the analysis unit 61 to detect the film thickness based on the light reflected from the workpiece 10. However, the optical film thickness detection method is not limited to this. For example, a detection window 65 that transmits light transmitted through the workpiece 10 is installed on the opposite side of the rotating table 31, separate from the detection window 65 that emits light from the light projecting unit 62. The workpiece 10 is made of a transparent material, and the rotating table 31 and the tray 34 are also made of a translucent material. The spectroscopic unit 63 and the analysis unit 61 are installed in an optical system that includes the detection window 65 that transmits light transmitted through the workpiece 10. The analysis unit 61 may detect the film thickness from the spectral transmittance characteristics based on the spectrum of the transmitted light.

Other Embodiments
The present invention is not limited to the above-described embodiment, but also includes other embodiments described below. The present invention also includes a combination of all or any of the above-described embodiment and the other embodiments described below. Furthermore, these embodiments can be omitted, replaced, or modified in various ways without departing from the scope of the invention, and such modifications are also included in the present invention.

The film formation chamber 4, film treatment chamber 5, and monitoring section 6 may be located at the bottom side of the chamber 20, and the vertical relationship between the film formation chamber 4, film treatment chamber 5, and monitoring section 6 and the rotating table 31 may be reversed. In this case, the installation surface 311 of the rotating table 31 is the surface that faces downward when the rotating table 31 is horizontal, that is, the bottom surface. The installation surface of the film formation device 100 may be the floor surface, the ceiling, or a side wall surface. In addition, the arrangement of the rotating table 31 is not limited to being horizontal, and may be vertically or inclined. In addition, the installation surface 311 of the rotating table 31 may be provided on both opposing sides.

In other words, the direction of the rotation plane of the rotating table 31 may be any direction, and the positions of the tray 34, the film forming unit 40, the film processing unit 50, and the detection window 65 may be such that the workpiece 10 held on the tray 34 can be processed by the film forming unit 40 and the film processing unit 50, and light can be irradiated by the detection window 65.

In the film forming apparatus 100, the film is oxidized, nitrided, or otherwise processed by the film processing section 50, and the film becomes a compound film, which increases the light transmittance of the film and enables film thickness detection. In the film forming apparatus 100, a process gas can be introduced into the film forming chamber 4 to oxidize or nitride the sputtered particles while forming a film on the workpiece 10. In this case, a compound film with high light transmittance is formed in the film forming chamber 4, and the film processing section 50 can be removed, and a monitoring section 6 can be provided downstream in the transport direction of the film forming chamber 4. In other words, in this embodiment, as long as film thickness detection can be performed on a compound film that has been oxidized, nitrided, or otherwise processed, the configuration is not limited to providing a monitoring section 6 downstream in the transport direction of the film processing chamber 5.

In the above embodiment, the monitoring unit 60 judges whether to continue or end film formation based on the film thickness detected, and controls each element of the film formation device based on the judgment result, but such feedback control does not have to be performed for the film formation process of all workpieces 10. For example, when the same film formation process is performed by carrying the workpieces 10 into the chamber 20 multiple times, feedback control may be performed for the workpieces 10 carried in the first time, and for the workpieces 10 carried in the second time and thereafter, it may be judged whether to continue or end film formation based on the film formation time taken for the first time, and each element of the film formation device may be controlled. That is, in this embodiment, it is sufficient to be able to detect the film thickness formed on the workpieces 10 carried in the chamber 20 at any time, and the configuration is not limited to detecting the film thickness of all workpieces 10.

10 Work 20 Chamber 20a Ceiling 20b Inner bottom surface 20c Inner peripheral surface 21 Exhaust port 22 Partition wall 30 Transport section 31 Rotary table 311 Installation surface 32 Motor 33 Holding section 34 Tray 4 Film formation chamber 40 Film formation section 41 Processing space 42 Target 421 Flying particles 43 Backing plate 44 Electrode 46 Power supply section 47 Gas inlet 48 Pipe 49 Sputtering gas inlet 5 Film treatment chamber 50 Film treatment section 51 Cylindrical body 52 Detection window material 53 Antenna 54 RF power supply 55 Matching box 56 Gas inlet 57 Pipe 58 Process gas inlet 59 Processing space 6 Monitoring section 60 Monitoring section 61 Analysis section 62 Light projection section 63 Spectroscopic section 64 Transmission section 65 Detection window 651 Outer end surface 652 Inner end surface 65A Central axis 66 Holder 661 Surrounding wall 67 Housing 68 Plate-shaped portion 681 Opposing surface 70 Load lock portion 80 Control device 90 Exhaust portion 100 Film forming device G1 Sputtering gas G2 Process gas

Claims (7)

a conveying unit having a rotating table that rotates by placing a workpiece on a placement surface, and conveying the workpiece in a circumferential conveying path by rotating the rotating table;
a film-forming chamber facing the transport path for forming a film on the workpiece;
a film forming section disposed in the film forming chamber, the film forming section having a target as a material source for the film and a plasma generator for generating plasma from a sputtering gas introduced between the target and the rotary table, the film forming section sputtering the target with the plasma to form a film on the workpiece;
A monitoring unit for monitoring a thickness of the film on the workpiece;
Equipped with
The monitoring unit is
a detection window disposed outside the film formation chamber and facing the transport path, through which light for detecting a film thickness passes;
a light projection unit that irradiates light onto the workpiece on which the film is formed through the detection window;
an analysis unit that detects a thickness of the film based on light reflected from the workpiece or light transmitted through the workpiece ;
a plate-shaped portion that is disposed around the detection window outside the film formation chamber, faces the installation surface of the turntable, extends along the installation surface , and prevents sputtered particles leaking from the film formation chamber from reaching the detection window ;
having
The detection window is
an end surface facing the installation surface of the rotary table and through which light from the light projecting unit is emitted toward the workpiece;
the end surface is inclined with respect to a central axis of the detection window and faces in a direction opposite to a direction in which the film formation chamber exists;
A film forming apparatus characterized by the above. the plate-shaped portion extends along the installation surface with a length equal to or greater than the mean free path of molecules of a material constituting the target;
2. The film forming apparatus according to claim 1, the plate-like portion has an opposing surface facing the installation surface of the turntable and having a surface roughness of 4 μm or more and 14 μm or less in arithmetic mean roughness Ra;
3. The film forming apparatus according to claim 1 or 2, The plate-shaped portion is installed at a distance that allows the work on the rotary table to pass through;
4. The film forming apparatus according to claim 1, wherein : a holder for holding the detection window,
the detection window has an end surface facing the installation surface of the rotary table and through which light from the light projecting unit is emitted toward the workpiece,
The holder has a surrounding wall surrounding the end surface,
a gap between an end of the surrounding wall and the installation surface is narrower than a gap between the end surface and the installation surface;
5. The film forming apparatus according to claim 1, wherein : the detection window is located on the inner periphery side of the rotary table;
6. The film forming apparatus according to claim 1, wherein: a film treatment chamber located downstream of the film formation chamber in a direction in which the workpiece is transported, facing the transport path, and in which the film formed in the film formation section is chemically reacted;
a film processing section disposed in the film processing chamber, the film processing section having a process gas inlet section for introducing a process gas and a plasma generator for generating plasma from the process gas, and for chemically reacting the film;
Further comprising:
The detection window is located downstream of the film treatment chamber in a conveying direction of the workpiece;
7. The film forming apparatus according to claim 1, wherein:

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