JP7604389B2 - Solid-state imaging device and electronic device - Google Patents

Description

This technology relates to solid-state imaging devices and electronic devices.

In recent years, digital cameras have become increasingly popular, and the demand for their central components, solid-state imaging devices (image sensors), is increasing. Therefore, in terms of performance, it is essential for solid-state imaging devices to achieve high image quality. For example, a technology has been proposed for a solid-state imaging device that uses a photoelectric conversion film containing multiple organic semiconductors that photoelectrically convert light of different wavelengths (see Patent Document 1).

JP 2012-191222 A

However, the technology proposed in Patent Document 1 may not be able to further improve the image quality of solid-state imaging devices.

Therefore, this technology has been developed in consideration of such circumstances, and its main objective is to provide a solid-state imaging device that can achieve even higher image quality, and an electronic device equipped with such a solid-state imaging device.

As a result of intensive research into achieving the above-mentioned objective, the inventor has succeeded in achieving even higher image quality in solid-state imaging devices, thus completing this technology.

That is, in the present technology, as a first aspect,
A semiconductor substrate;
a first photoelectric conversion unit provided above the semiconductor substrate and configured to convert light into electric charges;
a second photoelectric conversion unit provided above the first photoelectric conversion unit and configured to convert light into electric charges;
each of the first photoelectric conversion unit and the second photoelectric conversion unit includes at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode;
electrically connecting the first electrode of the second photoelectric conversion unit and a charge accumulation unit formed on the semiconductor substrate via a conductive portion that penetrates at least the first photoelectric conversion unit;
an insulating film portion is disposed on at least a part of the outer periphery of the conductive portion;
the insulating film portion is composed of at least one insulating film layer,
The at least one insulating film has fixed charges of the same type as the charges stored in the charge storage section.

In the solid-state imaging device according to the first aspect of the present technology,
The at least one insulating film may be disposed between the conductive section and the first photoelectric conversion section so as to cover an outer periphery of the conductive section.

In the solid-state imaging device according to the first aspect of the present technology,
the conductive portion penetrates the first photoelectric conversion portion and reaches the inside of the semiconductor substrate,
The at least one insulating film may be disposed between the conductive section, the first photoelectric conversion section, and the semiconductor substrate so as to cover an outer periphery of the conductive section.

In the solid-state imaging device according to the first aspect of the present technology,
Each of the first photoelectric conversion unit and the second photoelectric conversion unit may include a charge storage electrode arranged at a distance from the first electrode and facing the photoelectric conversion film via an insulating layer.

In the solid-state imaging device according to the first aspect of the present technology,
the second photoelectric conversion unit has a plurality of pixels,
One pixel has one of the charge storage electrodes,
The charge storage portion may be shared by the plurality of pixels.

In the solid-state imaging device according to the first aspect of the present technology,
electrically connecting the first electrode of the first photoelectric conversion unit and the first electrode of the second photoelectric conversion unit to the charge accumulation unit formed on the semiconductor substrate via a conductive portion that penetrates at least the first photoelectric conversion unit;
the insulating film portion is disposed on at least a part of the outer periphery of the conductive portion,
the insulating film portion is composed of the at least one insulating film,
the at least one insulating film has fixed charges of the same type as the charges stored in the charge storage section;
the first photoelectric conversion unit has a plurality of first pixels,
the second photoelectric conversion unit has a plurality of second pixels,
One of the first pixels has one of the charge storage electrodes,
One of the second pixels has one of the charge storage electrodes,
The charge storage portion may be shared by at least one of the first pixels and at least one of the second pixels.

In the solid-state imaging device according to the first aspect of the present technology,
The insulating film section may be composed of an insulating film having a fixed charge of the same type as the charge stored in the charge storage section, and an insulating film having a high dielectric constant material.

In the solid-state imaging device according to the first aspect of the present technology,
an insulating film having the high dielectric constant material is disposed so as to cover an outer periphery of the conductive portion,
the insulating film having a fixed charge is disposed so as to cover an outer periphery of the insulating film having a high dielectric constant material,
an insulating film having the high dielectric constant material is disposed between the conductive portion and the insulating film having the fixed charge,
The insulating film having a fixed charge may be disposed between the insulating film having a high dielectric constant material and the first photoelectric conversion section.

In the solid-state imaging device according to the first aspect of the present technology,
the insulating film having a fixed charge is disposed so as to cover an outer periphery of the conductive portion,
the insulating film having a high dielectric constant is disposed so as to cover an outer periphery of the insulating film having a fixed charge,
the insulating film having a fixed charge is disposed between the conductive portion and the insulating film having a high dielectric constant,
The insulating film having a high dielectric constant may be disposed between the insulating film having a fixed charge and the first photoelectric conversion section.

In the solid-state imaging device of the first aspect of the present technology, each of the first photoelectric conversion unit and the second photoelectric conversion unit may further include a transfer layer arranged between the first electrode and the photoelectric conversion film.

In the solid-state imaging device according to the first aspect of the present technology,
The at least one insulating film may be disposed between the conductive section and the first photoelectric conversion section and the transfer layer included in the first photoelectric conversion section so as to cover an outer periphery of the conductive section.

In the solid-state imaging device according to the first aspect of the present technology,
the conductive portion penetrates the first photoelectric conversion portion and reaches the inside of the semiconductor substrate,
The at least one insulating film may be arranged between the conductive portion and the first photoelectric conversion portion, the transfer layer included in the first photoelectric conversion portion, and the semiconductor substrate so as to cover the outer periphery of the conductive portion.

In addition, in the present technology, as a second aspect,
A semiconductor substrate;
a first photoelectric conversion unit provided above the semiconductor substrate and configured to convert light into electric charges;
a second photoelectric conversion unit provided above the first photoelectric conversion unit and configured to convert light into electric charges;
a third photoelectric conversion unit provided above the second photoelectric conversion unit and configured to convert light into electric charges;
each of the first photoelectric conversion unit, the second photoelectric conversion unit, and the third photoelectric conversion unit includes at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode;
electrically connecting the first electrode of the second photoelectric conversion unit and a first charge accumulation unit formed on the semiconductor substrate via a first conductive unit that at least penetrates the first photoelectric conversion unit;
a first insulating film portion is disposed on at least a part of an outer periphery of the first conductive portion;
the first insulating film portion is composed of at least one first insulating film layer,
the at least one first insulating film has fixed charges of the same type as the charges stored in the first charge storage portion;
electrically connecting the first electrode of the third photoelectric conversion unit and a second charge accumulation unit formed on the semiconductor substrate via a second conductive unit that penetrates at least the second photoelectric conversion unit and the first photoelectric conversion unit;
a second insulating film portion is disposed on at least a part of an outer periphery of the second conductive portion;
the second insulating film portion is composed of at least one layer of a second insulating film,
The at least one second insulating film has a fixed charge of the same type as the charge stored in the second charge storage portion.

In the solid-state imaging device according to the second aspect of the present technology,
the at least one first insulating film is disposed between the first conductive portion and the first photoelectric conversion portion so as to cover an outer periphery of the first conductive portion;
The at least one layer of second insulating film may be arranged between the second conductive portion and the second photoelectric conversion portion so as to cover the outer periphery of the second conductive portion, and may also be arranged between the second conductive portion and the first photoelectric conversion portion.

In the solid-state imaging device according to the second aspect of the present technology,
Each of the first photoelectric conversion unit, the second photoelectric conversion unit and the third photoelectric conversion unit may include a charge storage electrode arranged at a distance from the first electrode and facing the photoelectric conversion film via an insulating layer.

In the solid-state imaging device according to the second aspect of the present technology,
Each of the first photoelectric conversion unit, the second photoelectric conversion unit, and the third photoelectric conversion unit may further include a transfer layer disposed between the first electrode and the photoelectric conversion film.

In the solid-state imaging device according to the second aspect of the present technology,
the at least one first insulating film is disposed between the first conductive portion, and the first photoelectric conversion portion and the transfer layer included in the first photoelectric conversion portion so as to cover an outer periphery of the first conductive portion;
The at least one second insulating film may be arranged between the second conductive portion and the second photoelectric conversion portion, the transfer layer included in the second photoelectric conversion portion, the first photoelectric conversion portion, and the transfer layer included in the first photoelectric conversion portion, so as to cover the outer periphery of the second conductive portion.

Furthermore, in the present technology, as a third aspect,
A semiconductor substrate;
a photoelectric conversion unit provided above the semiconductor substrate and configured to convert light into electric charges;
the photoelectric conversion unit includes at least a first electrode, a second electrode, a transfer layer, a photoelectric conversion film disposed between the second electrode and the transfer layer, and a charge storage electrode disposed apart from the first electrode and facing the transfer layer via an insulating layer;
the first electrode penetrates at least the photoelectric conversion film and the second electrode;
electrically connecting the first electrode to a charge storage portion formed in the semiconductor substrate;
an insulating film portion is disposed on at least a part of the outer periphery of the first electrode;
the insulating film portion is composed of at least one insulating film layer,
The at least one insulating film has fixed charges of the same type as the charges stored in the charge storage section.

In a solid-state imaging device according to a third aspect of the present technology,
The at least one insulating film may be disposed between the first electrode and the photoelectric conversion film and the second electrode so as to cover an outer periphery of the first electrode.

Furthermore, in the present technology, as a fourth aspect,
A semiconductor substrate;
N (N is an integer of 2 or more) photoelectric conversion units provided above the semiconductor substrate and configured to convert light into electric charges,
The N photoelectric conversion units have a stacked structure,
Each of the N photoelectric conversion units includes at least a first electrode, a second electrode, and a photoelectric conversion unit disposed between the first electrode and the second electrode,
the first electrode of the nth photoelectric conversion unit (n is 2 or more and N or less) counting from the semiconductor substrate side is electrically connected to the n-1th charge accumulation unit formed on the semiconductor substrate via an n-1th conductive portion that penetrates at least the 1st to the n-1th photoelectric conversion units (n is 2 or more and N or less, however, when n=2, it is the first photoelectric conversion unit counting from the semiconductor substrate);
an (n-1)th insulating film portion is disposed on at least a portion of an outer periphery of the (n-1)th conductive portion;
the (n-1)th insulating film portion is composed of at least one (n-1)th insulating film layer,
The at least one (n-1)th insulating film has a fixed charge of the same type as the charge accumulated in the (n-1)th charge accumulation section.

In a solid-state imaging device according to a fourth aspect of the present technology,
The at least one n-1th insulating film may be arranged between the n-1th conductive portion and the 1st to n-1th photoelectric conversion portions counting from the semiconductor substrate (however, when n=2, the 1st photoelectric conversion portion counting from the semiconductor substrate) so as to cover the outer periphery of the n-1th conductive portion.

In a solid-state imaging device according to a fourth aspect of the present technology,
the n-1 conductive portion penetrates through the first to n-1th photoelectric conversion portions counting from the semiconductor substrate (however, when n=2, the first photoelectric conversion portion counting from the semiconductor substrate) and the semiconductor substrate;
The at least one n-1th insulating film may be arranged between the n-1th conductive portion and the 1st to n-1th photoelectric conversion portions counting from the semiconductor substrate (however, when n=2, the 1st photoelectric conversion portion counting from the semiconductor substrate) and the semiconductor substrate so as to cover the outer periphery of the n-1th conductive portion.

In a solid-state imaging device according to a fourth aspect of the present technology,
Each photoelectric conversion unit of the N photoelectric conversion units may be arranged at a distance from a first electrode included in each photoelectric conversion unit of the N photoelectric conversion units, and may include a charge storage electrode of each of the N charge storage electrodes arranged opposite the photoelectric conversion film included in each photoelectric conversion unit of the N photoelectric conversion units, via an insulating layer.

In a solid-state imaging device according to a fourth aspect of the present technology,
the nth photoelectric conversion unit has a plurality of nth pixels,
One of the n-th pixels has one of the n-th charge storage electrodes,
The nth charge storage portion may be shared by the plurality of nth pixels.

In a solid-state imaging device according to a fourth aspect of the present technology,
the first electrode of the nth photoelectric conversion unit and each of the first to n-1th photoelectric conversion units counting from the semiconductor substrate (when n=2, the first photoelectric conversion unit counting from the semiconductor substrate) are electrically connected to the n-1th charge accumulation unit formed on the semiconductor substrate via the n-1th conductive unit penetrating at least the first to n-1th photoelectric conversion units counting from the semiconductor substrate (when n=2, the first photoelectric conversion unit counting from the semiconductor substrate);
the (n-1)th insulating film portion is disposed on at least a part of an outer periphery of the (n-1)th conductive portion;
the (n-1)th insulating film portion is composed of the at least one (n-1)th insulating film,
the at least one (n-1)th insulating film has fixed charges of the same type as the charges stored in the (n-1)th charge storage portion,
the nth photoelectric conversion unit has a plurality of nth pixels,
each of the first to n-1th photoelectric conversion units counting from the semiconductor substrate (when n=2, the first photoelectric conversion unit counting from the semiconductor substrate) has a plurality of first pixels to n-1th pixels,
Each of the n-th pixels has the n-th charge storage electrode,
Each of the first pixel to the (n-1)th pixel (wherein, when n=2, the first pixel) has a charge storage electrode, each of the first pixel to the (n-1)th pixel,
The (n-1)th charge storage portion may be shared by at least one of the nth pixel and at least one of each of the 1st pixel to the (n-1)th pixel.

In a solid-state imaging device according to a fourth aspect of the present technology,
The n-1th insulating film portion may be composed of an n-1th insulating film having a fixed charge of the same type as the charge stored in the n-1th charge storage portion, and an n-1th insulating film having a high dielectric constant material.

In a solid-state imaging device according to a fourth aspect of the present technology,
the (n-1)th insulating film having the high dielectric constant material is disposed so as to cover an outer periphery of the (n-1)th conductive portion,
the (n-1)th insulating film having the fixed charge is disposed so as to cover an outer periphery of the (n-1)th insulating film having the high dielectric constant material,
the n-1th insulating film having the high dielectric constant material is disposed between the n-1th conductive portion and the n-1th insulating film having the fixed charge,
The (n-1)th insulating film having the fixed charge may be disposed between the (n-1)th insulating film having the high dielectric constant material and the (n-1)th photoelectric conversion section.

In a solid-state imaging device according to a fourth aspect of the present technology,
the (n-1)th insulating film having the fixed charge is disposed so as to cover an outer periphery of the (n-1)th conductive portion,
the (n-1)th insulating film having a high dielectric constant is disposed so as to cover an outer periphery of the (n-1)th insulating film having a fixed charge,
the (n-1)th insulating film having the fixed charge is disposed between the (n-1)th conductive portion and the (n-1)th insulating film having the high dielectric constant,
The (n-1)th insulating film having the high dielectric constant may be disposed between the (n-1)th insulating film having the fixed charge and the photoelectric conversion section.

In a solid-state imaging device according to a fourth aspect of the present technology,
Each of the N photoelectric conversion units may further include N transfer layers disposed between the first electrode and the photoelectric conversion film.

In a solid-state imaging device according to a fourth aspect of the present technology,
The at least one n-1th insulating film may be arranged between the n-1th conductive portion and the transfer layer including the 1st to n-1th photoelectric conversion portions counting from the semiconductor substrate (however, when n=2, the 1st photoelectric conversion portion counting from the semiconductor substrate) and each of the 1st to n-1th photoelectric conversion portions counting from the semiconductor substrate (however, when n=2, the 1st photoelectric conversion portion counting from the semiconductor substrate), so as to cover the outer periphery of the n-1th conductive portion.

In a solid-state imaging device according to a fourth aspect of the present technology,
the n-th conductive portion penetrates through the first to (n-1)th photoelectric conversion portions counting from the semiconductor substrate (however, when n=2, the first photoelectric conversion portion counting from the semiconductor substrate) and the semiconductor substrate;
The at least one n-1th insulating film may be arranged between the n-1 conductive portion and the transfer layer and the semiconductor substrate including the 1st to n-1th photoelectric conversion portions counting from the semiconductor substrate (however, when n=2, the 1st photoelectric conversion portion counting from the semiconductor substrate), and each of the 1st to n-1th photoelectric conversion portions counting from the semiconductor substrate (however, when n=2, the 1st photoelectric conversion portion counting from the semiconductor substrate), so as to cover the outer periphery of the n-1th conductive portion.

Furthermore, the present technology provides an electronic device equipped with any one of the solid-state imaging devices of the first to fourth aspects.

According to this technology, it is possible to realize even higher image quality in solid-state imaging devices. Note that the effects described here are not necessarily limited to those described herein, and may be any of the effects described in this disclosure.

1 is a diagram illustrating an example of the configuration of a solid-state imaging device according to a first embodiment to which the present technology is applied. 1 is a diagram illustrating an example of the configuration of a solid-state imaging device according to a first embodiment to which the present technology is applied. 1 is a diagram illustrating an example of the configuration of a solid-state imaging device according to a first embodiment to which the present technology is applied. 1 is a diagram illustrating an example of the configuration of a solid-state imaging device according to a first embodiment to which the present technology is applied. 1 is a diagram illustrating an example of the configuration of a solid-state imaging device according to a first embodiment to which the present technology is applied. 1 is a diagram illustrating an example of the configuration of a solid-state imaging device according to a first embodiment to which the present technology is applied. 11 is a diagram illustrating an example of the configuration of a solid-state imaging device according to a second embodiment to which the present technology is applied. 11 is a diagram illustrating an example of the configuration of a solid-state imaging device according to a second embodiment to which the present technology is applied. 11 is a diagram illustrating an example of the configuration of a solid-state imaging device according to a second embodiment to which the present technology is applied. 11 is a diagram illustrating an example of the configuration of a solid-state imaging device according to a second embodiment to which the present technology is applied. 13 is a diagram illustrating an example of the configuration of a solid-state imaging device according to a third embodiment to which the present technology is applied. 13A to 13C are diagrams for explaining a manufacturing method of a solid-state imaging device according to a third embodiment to which the present technology is applied. 13 is a diagram illustrating an example of the configuration of a solid-state imaging device according to a fourth embodiment to which the present technology is applied. 13 is a diagram illustrating an example of the configuration of a solid-state imaging device according to a fourth embodiment to which the present technology is applied. FIG. 13 is a diagram illustrating an example of the configuration of a solid-state imaging device according to a fifth embodiment to which the present technology is applied. 13 is a diagram illustrating an example of the configuration of a solid-state imaging device according to a sixth embodiment to which the present technology is applied. 13 is a diagram illustrating an example of the configuration of a solid-state imaging device according to a sixth embodiment to which the present technology is applied. 11 is a diagram showing an example of a comparison result between an insulating film having a fixed charge and an insulating film having no fixed charge. FIG. 11 is a diagram showing an example of a comparison result between an insulating film having a fixed charge and an insulating film having no fixed charge. FIG. 1 is a schematic diagram showing an example of the overall configuration of a solid-state imaging device according to the present technology; 1A to 1C are diagrams illustrating examples of use of solid-state imaging devices according to first to sixth embodiments to which the present technology is applied. FIG. 13 is a functional block diagram of an example of an electronic device according to a seventh embodiment to which the present technology is applied. 1 is a diagram illustrating an example of a schematic configuration of an endoscopic surgery system. 2 is a block diagram showing an example of the functional configuration of a camera head and a CCU. FIG. 1 is a block diagram showing an example of a schematic configuration of a vehicle control system; 4 is an explanatory diagram showing an example of the installation positions of an outside-vehicle information detection unit and an imaging unit; FIG.

The following describes a preferred embodiment for implementing the present technology. The embodiment described below shows an example of a typical embodiment of the present technology, and is not intended to narrow the scope of the present technology. Unless otherwise specified, in the drawings, "upper" means the upper direction or upper side in the drawing, "lower" means the lower direction or lower side in the drawing, "left" means the left direction or left side in the drawing, and "right" means the right direction or right side in the drawing. In addition, in the drawings, the same or equivalent elements or components are given the same reference numerals, and duplicate explanations are omitted.

The explanation will be given in the following order.
1. Overview of the Present Technology 2. First Embodiment (Example 1 of Solid-State Imaging Device)
3. Second embodiment (second example of solid-state imaging device)
4. Third embodiment (third example of solid-state imaging device)
5. Fourth embodiment (fourth example of solid-state imaging device)
6. Fifth embodiment (fifth example of solid-state imaging device)
7. Sixth embodiment (sixth example of solid-state imaging device)
8. Seventh embodiment (example of electronic device)
9. Example of use of solid-state imaging device using this technology 10. Example of application to endoscopic surgery system 11. Example of application to moving object

1. Overview of this technology
First, an overview of the present technology will be described.

In recent years, there has been active technological development relating to solid-state imaging devices with a structure in which photodiodes that perform photoelectric conversion of light of different wavelengths are stacked vertically, solid-state imaging devices that use a photoelectric conversion film containing organic semiconductors that perform photoelectric conversion of light of different wavelengths, solid-state imaging devices that use photoelectric conversion elements with MIS (Metal Insulator Semiconductor) regions, and solid-state imaging devices that use a semiconductor layer between the photoelectric conversion layer and insulating layer to enable smooth transfer of accumulated electric charges.

In the case of a structure having N or more (N is an integer of 2 or more) photoelectric conversion films (photoelectric conversion sections) stacked vertically, in order to read out the signal from the upper photoelectric conversion film (photoelectric conversion section), it is necessary to install a signal readout electrode, spaced apart by an insulating film so as to penetrate the lower photoelectric conversion film (photoelectric conversion section).

However, there is a concern that this signal readout electrode modulates the potential of at least one underlying photoelectric conversion film (photoelectric conversion section), trapping the charge to be read out and leading to a decrease in signal quality. In addition, when forming this signal readout electrode, at least one underlying photoelectric conversion film (photoelectric conversion section) may be damaged, resulting in the generation of dark current. To address the above issues, technology has been established for designing impurity profiles using ion doping, etc., for photodiodes (PDs) formed on existing semiconductor substrates (Si substrates), but the current situation is that no technology has been established for photoelectric conversion films using organic semiconductor materials, etc.

This technology has been developed in consideration of such circumstances. This technology is characterized in that the signal readout electrode (including a configuration in which a through electrode is added to the signal readout electrode) of at least one upper layer photoelectric conversion film (photoelectric conversion section) has a structure covered with a film having a fixed charge of the same polarity as the signal charge. For example, when the signal charge to be read out is an electron, the fixed charge possessed by the insulating film covering the signal readout electrode and/or the through electrode is a negative fixed charge, and when the signal charge to be read out is a hole, the fixed charge possessed by the insulating film covering the signal readout electrode and/or the through electrode is a positive fixed charge. At least, this structure makes it possible to improve the aperture ratio of at least one lower layer photoelectric conversion film (photoelectric conversion section), suppress afterimages and signal degradation, and in addition, suppress the generation of dark current.

Next, an example of the overall configuration of a solid-state imaging device related to the present technology will be explained using Figure 20.

Figure 20 is a schematic diagram showing an example of the overall configuration of a solid-state imaging device relating to the present technology (solid-state imaging device 1e in Figure 20).

As shown in FIG. 20, the solid-state imaging device 1e is configured to have a pixel region (so-called imaging region, pixel section) 3e in which pixels 2e including a plurality of photoelectric conversion elements are regularly arranged two-dimensionally on a semiconductor substrate 11e, for example, a silicon substrate, and a peripheral circuit section. The pixel 2e is configured to have a photoelectric conversion film that configures the photoelectric conversion section, for example, a photoelectric conversion film containing an organic semiconductor, a photoelectric conversion film containing an inorganic semiconductor (for example, a photodiode (PD)), and a plurality of pixel transistors (so-called MOS transistors). The plurality of pixel transistors can be configured, for example, of three transistors, a transfer transistor, a reset transistor, and an amplification transistor. In addition, it can be configured of four transistors by adding a selection transistor. The equivalent circuit of the unit pixel is the same as that of a normal pixel, so a detailed description will be omitted. The pixel 2e can also have a shared pixel structure. This pixel sharing structure is configured, for example, of a plurality of photodiodes, a plurality of transfer transistors, one shared floating diffusion, and one other shared pixel transistor.

The peripheral circuit section is composed of a vertical drive circuit 4e, a column signal processing circuit 5e, a horizontal drive circuit 6e, an output circuit 7e, a control circuit 8e, etc.

The control circuit 8e receives an input clock and data instructing the operating mode, etc., and outputs data such as internal information of the solid-state imaging device. That is, the control circuit 8e generates clock signals and control signals that serve as the basis for the operation of the vertical drive circuit 4e, column signal processing circuit 5e, horizontal drive circuit 6e, etc., based on the vertical synchronization signal, horizontal synchronization signal, and master clock. These signals are then input to the vertical drive circuit 4e, column signal processing circuit 5e, horizontal drive circuit 6e, etc.

The vertical drive circuit 4e is, for example, configured by a shift register, selects pixel drive wiring, supplies a pulse for driving the pixel to the selected pixel drive wiring, and drives the pixel by row. That is, the vertical drive circuit 4e sequentially selects and scans each pixel 2e in the pixel region (pixel portion) 3e in the vertical direction by row, and supplies a pixel signal based on a signal charge generated in the photoelectric conversion film of each pixel 2e, for example, a photoelectric conversion film containing an organic semiconductor, a photodiode (PD), etc. according to the amount of light received, to the column signal processing circuit 5e through the vertical signal line 9e.

The column signal processing circuit 5e is arranged, for example, for each column of pixels 2e, and performs signal processing such as noise removal for each pixel column on the signals output from the pixels 2e in one row. That is, the column signal processing circuit 5e performs signal processing such as CDS for removing fixed pattern noise specific to the pixels 2e, signal amplification, and AD conversion. A horizontal selection switch (not shown) is provided at the output stage of the column signal processing circuit 5e and connected between the horizontal signal line 10e.

The horizontal drive circuit 6e is, for example, composed of a shift register, and sequentially outputs horizontal scanning pulses to select each of the column signal processing circuits 5 in turn, and output pixel signals from each of the column signal processing circuits 5 to the horizontal signal line 10e.

The output circuit 7e processes and outputs the signals sequentially supplied from each of the column signal processing circuits 5e through the horizontal signal line 10e. For example, the output circuit 7e may only perform buffering, or may perform black level adjustment, column variation correction, various digital signal processing, etc. The input/output terminal 12e exchanges signals with the outside.

A preferred embodiment for implementing the present technology will be specifically described below with reference to the drawings. The embodiment described below is an example of a representative embodiment of the present technology, and is not intended to narrow the scope of the present technology.

2. First embodiment (first example of solid-state imaging device)
A solid-state imaging device according to a first embodiment of the present technology (first example of a solid-state imaging device) will be described with reference to FIGS. 1 to 6 and 18. FIG.

First, an explanation will be given with reference to Fig. 1. Fig. 1 is a cross-sectional view showing an example of the configuration of a solid-state imaging device (solid-state imaging device 100) according to a first embodiment of the present technology.

The solid-state imaging device 100 comprises a semiconductor substrate 30, a first photoelectric conversion unit 100-1 that is provided above the semiconductor substrate 30 (the light incident side, or the upper side in Figure 1) and converts light into electric charges, and a second photoelectric conversion unit 100-2 that is provided above the first photoelectric conversion unit 100-1 (the light incident side, or the upper side in Figure 1) and converts light into electric charges.

The first photoelectric conversion unit 100-1 includes a first electrode 8 (a readout electrode, which is the lower electrode in Figure 1), a second electrode 2-2 (the upper electrode in Figure 1), and a photoelectric conversion film 5 arranged between the first electrode (readout electrode) 8 and the second electrode 2-2.

The second photoelectric conversion section 100-2 includes a first electrode 7 (a readout electrode, which is the lower electrode in Figure 1), a second electrode 2-1 (the upper electrode in Figure 1), and a photoelectric conversion film 3 arranged between the first electrode (readout electrode) 7 and the second electrode 2-1.

In the first photoelectric conversion section 100-1, a transfer layer 6 is disposed between the first electrode 8 and the photoelectric conversion film 5, and a charge storage electrode 1-2 is disposed at a distance from the first electrode 8 and in the insulating layer 11 facing the photoelectric conversion film 5 (transfer layer 6) through the insulating layer 11 below the transfer layer 6. On the other hand, in the second photoelectric conversion section 100-2, a transfer layer 4 is disposed between the first electrode 7 and the photoelectric conversion film 3, and a charge storage electrode 1-1 is disposed at a distance from the first electrode 7 and in the insulating layer 10 facing the photoelectric conversion film 3 (transfer layer 4) through the insulating layer 10 below the transfer layer 4.

The first photoelectric conversion section 100-1 may have a buffer layer between the photoelectric conversion film 5 and the transfer layer 6, or may have a buffer layer between the photoelectric conversion film 5 and the second electrode 2-2. The first photoelectric conversion section 100-1 may have a charge injection layer between the transfer layer 6 and the buffer layer, or may have a charge injection layer between the second electrode 2-2 and the buffer layer. The second photoelectric conversion section 100-2 may have a buffer layer between the photoelectric conversion film 3 and the transfer layer 4, or may have a buffer layer between the photoelectric conversion film 3 and the second electrode 2-1. The second photoelectric conversion section 100-2 may have a charge injection layer between the transfer layer 4 and the buffer layer, or may have a charge injection layer between the second electrode 2-1 and the buffer layer.

The first electrode 7 of the second photoelectric conversion unit 100-2 and the charge storage unit 41 formed in the semiconductor substrate 30 are electrically connected through the conductive portion (through electrode) 12 that penetrates the first photoelectric conversion unit 100-1. That is, in order to electrically connect the first electrode 7 of the second photoelectric conversion unit 100-2 and the charge storage unit 41 formed in the semiconductor substrate 30, the solid-state imaging device 100 has a connection hole 1214-1 that penetrates the insulating layer 10, the first photoelectric conversion unit 100-1, and the semiconductor substrate 30. A conductive portion (through electrode) 12 and a conductive portion (through electrode) 14 are formed in the connection hole 1214-1, and the conductive portion (through electrode) 12 connected to the first electrode 7 and the conductive portion (through electrode) 14 connected to the charge storage unit 41 are connected through a via 13 formed in the insulating layer 11. The photodiode (PD) 9 formed in the semiconductor substrate 30 is connected to the charge storage unit 42. Further, in order to electrically connect the first electrode 8 of the first photoelectric conversion unit 100-1 and the charge accumulation unit 43 formed in the semiconductor substrate 30, a connection hole 150-1 is formed penetrating the insulating layer 11 and the semiconductor substrate 30. That is, the first electrode 8 is connected to the charge accumulation unit 43 via a conductive portion (penetrating electrode) 15 formed in the connection hole 150-1.

In the connection hole 1214-1, an insulating film 51 having the same type of fixed charge as the charge stored in the charge storage section 41 is formed between the conductive section 12 (through electrode) and the photoelectric conversion film 5 and the transfer layer 6 below the photoelectric conversion film 5 (lower side in FIG. 1) so as to cover the outer periphery of the conductive section 12 (through electrode). In detail, with the connection hole 1214-1 in FIG. 1 as the center reference in the horizontal direction in the figure, the photoelectric conversion film 5 and the transfer layer 6, the insulating film 51-1 (51), and the conductive section 12 are formed in this order on the left side, and the photoelectric conversion film 5 and the transfer layer 6, the insulating film 51-2 (51), and the conductive section 12 are formed in this order on the right side. When viewed in the vertical direction in FIG. 1, the insulating film 51 is formed extending from the upper part of the photoelectric conversion film 5 (upper side in FIG. 1) to the lower part of the transfer layer 6 (lower side in FIG. 1), that is, extending over the entire side surface of the photoelectric conversion film 5 and the entire side surface of the transfer layer 6.

The insulating film 51 is an insulating film having a negative fixed charge when the signal charge to be read out is an electron, and is an insulating film having a positive fixed charge when the signal charge to be read out is a hole. By including the insulating film 51 in the solid-state imaging device 100, the signal charge photoelectrically converted by the photoelectric conversion film 5 is stored in the transfer layer 6 above the storage electrode 1-2 without being captured by the conductive portion 12 (through electrode).

When the insulating film 51 is an insulating film having a negative fixed charge, the insulating film 51 may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, porphyrium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, the insulating film 51 may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

When the insulating film 51 is an insulating film having a positive fixed charge, the insulating film 51 may contain, for example, at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, the insulating film 51 may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

Next, an explanation will be given with reference to Fig. 2. Fig. 2 is a cross-sectional view showing an example configuration of a solid-state imaging device (solid-state imaging device 200) according to a first embodiment of the present technology.

The solid-state imaging device 200 comprises a semiconductor substrate 30, a first photoelectric conversion unit 200-1 that is provided above the semiconductor substrate 30 (the light incident side, or the upper side in Figure 2) and converts light into electric charges, and a second photoelectric conversion unit 200-2 that is provided above the first photoelectric conversion unit 200-1 (the light incident side, or the upper side in Figure 2) and converts light into electric charges.

The first photoelectric conversion unit 200-1 includes a first electrode 8 (a readout electrode, which is the lower electrode in Figure 2), a second electrode 2-2 (the upper electrode in Figure 2), and a photoelectric conversion film 5 arranged between the first electrode (readout electrode) 8 and the second electrode 2-2.

The second photoelectric conversion section 200-2 includes a first electrode 7 (a readout electrode, which is the lower electrode in Figure 2), a second electrode 2-1 (the upper electrode in Figure 2), and a photoelectric conversion film 3 arranged between the first electrode (readout electrode) 7 and the second electrode 2-1.

In the first photoelectric conversion section 200-1, a transfer layer 6 is disposed between the first electrode 8 and the photoelectric conversion film 5, and a charge storage electrode 1-2 is disposed at a distance from the first electrode 8 and in the insulating layer 11 facing the photoelectric conversion film 5 (transfer layer 6) via the insulating layer 11 below the transfer layer 6. On the other hand, in the second photoelectric conversion section 200-2, a transfer layer 4 is disposed between the first electrode 7 and the photoelectric conversion film 3, and a charge storage electrode 1-1 is disposed at a distance from the first electrode 7 and in the insulating layer 10 facing the photoelectric conversion film 3 (transfer layer 4) via the insulating layer 10 below the transfer layer.

The first electrode 7 of the second photoelectric conversion unit 200-2 and the charge accumulation unit 41 formed in the semiconductor substrate 30 are electrically connected through the conductive portion (through electrode) 12 that penetrates the first photoelectric conversion unit 200-1. That is, in order to electrically connect the first electrode 7 of the second photoelectric conversion unit 200-2 and the charge accumulation unit 41 formed in the semiconductor substrate 30, the solid-state imaging device 200 has a connection hole 1214-2 that penetrates the insulating layer 10, the first photoelectric conversion unit 200-1, and the semiconductor substrate 30. A conductive portion (through electrode) 12 and a conductive portion (through electrode) 14 are formed in the connection hole 1214-2, and the conductive portion (through electrode) 12 connected to the first electrode 7 and the conductive portion (through electrode) 14 connected to the charge accumulation unit 41 are connected through the via 13. The photodiode (PD) 9 formed in the semiconductor substrate 30 is connected to the charge accumulation unit 42. Further, in order to electrically connect the first electrode 8 of the first photoelectric conversion unit 200-1 and the charge accumulation unit 43 formed in the semiconductor substrate 30, a connection hole 150-2 is formed penetrating the insulating layer 11 and the semiconductor substrate 30. That is, the first electrode 8 is connected to the charge accumulation unit 43 via a conductive portion (penetrating electrode) 15 formed in the connection hole 150-2.

Within the connection hole 1214-2, an insulating film 52 having a fixed charge of the same type as the charge accumulated in the charge accumulation section 41 is formed between the conductive section 12 (through electrode) and the insulating layer 10, the second electrode 2-2 below the insulating layer 10, the photoelectric conversion film 5 below the second electrode 2-2, the transfer layer 6 below the photoelectric conversion film 5, and the insulating layer 11 below the transfer layer 6, so as to cover the outer periphery of the conductive section 12 (through electrode). 2 is taken as the center reference in the horizontal direction in the figure, the insulating layer 10, the second electrode 2-2 below the insulating layer 10, the photoelectric conversion film 5 below the second electrode 2-2, the transfer layer 6 below the photoelectric conversion film 5, the insulating layer 11 below the transfer layer 6, the insulating film 52-1 (52), and the conductive portion 12 are formed in this order on the left side, and the insulating layer 10, the second electrode 2-2 below the insulating layer 10, the photoelectric conversion film 5 below the second electrode 2-2, the transfer layer 6 below the photoelectric conversion film 5, and the insulating layer 11 below the transfer layer 6, the insulating film 52-2 (52), and the conductive portion 12 are formed in this order on the right side. When viewed in the vertical direction in FIG. 2, the insulating film 52 is formed extending from the first electrode 7 formed in the insulating layer 10 to the via 13 formed in the insulating layer 11.

The insulating film 52 is an insulating film having a negative fixed charge when the signal charge to be read out is an electron, and is an insulating film having a positive fixed charge when the signal charge to be read out is a hole. By including the insulating film 52 in the solid-state imaging device 200, the signal charge photoelectrically converted by the photoelectric conversion film 5 is stored in the transfer layer 6 above the storage electrode 1-2 without being captured by the conductive portion 12 (through electrode).

When the insulating film 52 is an insulating film having a negative fixed charge, the insulating film 52 may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, porphyrium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, the insulating film 52 may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

When the insulating film 52 is an insulating film having a positive fixed charge, the insulating film 52 may contain, for example, at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, the insulating film 52 may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

Description will be given with reference to FIG. 3. FIG. 3 is a planar layout diagram showing a configuration example (solid-state imaging device 300) of a solid-state imaging device according to a first embodiment of the present technology. More specifically, FIG. 3(a) is a planar layout diagram of one pixel of the solid-state imaging device 200 at the E1 position shown in FIG. 2, FIG. 3(b) is a planar layout diagram of one pixel of the solid-state imaging device 200 at the E2 position shown in FIG. 2, FIG. 3(c) is a planar layout diagram of one pixel of the solid-state imaging device 200 at the E3 position shown in FIG. 2, FIG. 3(d) is a planar layout diagram of one pixel of the solid-state imaging device 200 at the E4 position shown in FIG. 2, FIG. 3(e) is a planar layout diagram of one pixel of the solid-state imaging device 200 at the E5 position shown in FIG. 2, and FIG. 3(f) is a planar layout diagram of one pixel of the solid-state imaging device 200 at the E6 position shown in FIG. 2. It is assumed that one pixel has one charge storage electrode 1-1 or 1-2 (or one photodiode (PD) 9), and in the solid-state imaging device 200 shown in FIG. 2, one second pixel of the second photoelectric conversion unit 200-2 having one charge storage electrode 1-1, one first pixel of the first photoelectric conversion unit 200-1 having one charge storage electrode 1-2, and one third pixel having one photodiode (PD) (one first pixel, one second pixel, and one third pixel may be collectively referred to as one pixel unit. The same applies below.) are shown. Incidentally, when the charge storage electrode 1-1 or 1-2 is composed of a plurality of charge storage electrode segments, one pixel has one that is obtained by adding up the plurality of charge storage electrode segments (one charge storage electrode 1-1 or 1-2). In other words, it is not considered that one charge storage electrode segment is arranged for each pixel. The above definition of a pixel is applicable at least to the present technology.

Figure 3 (a) shows the photoelectric conversion film 3 for one pixel (one second pixel). The photoelectric conversion film 3 is, for example, a photoelectric conversion film that absorbs green light (for example, light having a wavelength of 495 nm to 570 nm).

3(b) shows, from the left side of FIG. 3(b), a first electrode (signal readout electrode) 7 formed on an insulating layer 10, and a charge storage electrode 1-1 formed on the insulating layer 10. As shown in FIG. 3(b), the first electrode (signal readout electrode) 7 and the charge storage electrode 1-1 are arranged on approximately the same plane, and for each second pixel, one charge storage section (floating diffusion (FD)) (not shown in FIG. 3(b)) is formed that is connected to the first electrode (signal readout electrode) 7 via a conductive section 12 (through electrode) described later.

In Fig. 3(c), on the left side of Fig. 3(c), a conductive portion 12 (through electrode) formed in the insulating layer 10 and an insulating film 53-c having a negative or positive fixed charge are shown. As shown in Fig. 3(c), the insulating film 53-c is formed so as to cover the outer periphery of the conductive portion 12 (through electrode).

Figure 3(d) shows the second electrode 2-2, a conductive portion 12 (through electrode) formed on the left side of Figure 3(d), and an insulating film 53-d having a negative or positive fixed charge. As shown in Figure 3(d), the insulating film 53-d is formed so as to cover the outer periphery of the conductive portion 12 (through electrode), and the conductive portion 12 and the second electrode 2-2 are insulated via the insulating film 53-d.

Figure 3(e) shows the photoelectric conversion film 5 for one pixel (one first pixel), a conductive portion 12 (through electrode) formed on the left side of Figure 3(e), and an insulating film 53-e having a negative or positive fixed charge. The photoelectric conversion film 5 is, for example, a photoelectric conversion film that absorbs red light (for example, light having a wavelength of 620 nm to 750 nm). As shown in Figure 3(e), the insulating film 53-e is formed so as to cover the outer periphery of the conductive portion 12 (through electrode), and the insulating film 53-e prevents the signal charge (electrons or holes) photoelectrically converted by the photoelectric conversion film 5 from being captured by the conductive portion 12 (through electrode).

3(f) shows, from the left, a conductive portion 12 (through electrode) formed in an insulating layer 11, an insulating film 53-f having a negative or positive fixed charge formed to cover the outer periphery of the conductive portion 12 (through electrode), a charge storage electrode 1-2, and a first electrode (signal readout electrode) 8. As shown in FIG. 3(f), the insulating film 53-f and the insulating layer 11 insulate the conductive portion 12 (through electrode) from the charge storage electrode 1-2, and the insulating layer 11 insulates the charge storage electrode 1-2 from the first electrode (signal readout electrode) 8. The first electrode (signal readout electrode) 8 and the charge storage electrode 1-2 are arranged on approximately the same plane, and for each first pixel, one charge storage section (floating diffusion (FD)) (not shown in FIG. 3(b)) is formed which is connected to the first electrode (signal readout electrode) 8 via a conductive section 15 (through electrode) (not shown in FIG. 3).

Description will be given with reference to FIG. 4. FIG. 4 is a planar layout diagram showing a configuration example (solid-state imaging device 400) of a solid-state imaging device according to a first embodiment of the present technology. More specifically, FIG. 4(a) is a planar layout diagram of four pixels of the solid-state imaging device 200 at the E1 position shown in FIG. 2, FIG. 4(b) is a planar layout diagram of four pixels of the solid-state imaging device 200 at the E2 position shown in FIG. 2, FIG. 4(c) is a planar layout diagram of four pixels of the solid-state imaging device 200 at the E3 position shown in FIG. 2, FIG. 4(d) is a planar layout diagram of four pixels of the solid-state imaging device 200 at the E4 position shown in FIG. 2, FIG. 4(e) is a planar layout diagram of four pixels of the solid-state imaging device 200 at the E5 position shown in FIG. 2, and FIG. 4(f) is a planar layout diagram of four pixels of the solid-state imaging device 200 at the E6 position shown in FIG. 2. Incidentally, as described above, the solid-state imaging device 200 in Fig. 2 includes one second pixel of the second photoelectric conversion section 200-2 having one charge storage electrode 1-1, one first pixel of the first photoelectric conversion section 200-1 having one charge storage electrode 1-2, and one third pixel having one photodiode (PD) (one first pixel, one second pixel, and one third pixel may be collectively referred to as one pixel unit. The same applies below.) Therefore, the cross-sectional view of the solid-state imaging device 200 in Fig. 2 showing one pixel unit does not strictly match the planar layout diagram of the solid-state imaging device 400 in Fig. 4 showing four pixel units.

Figure 4 (a) shows photoelectric conversion films 3 (photoelectric conversion films 3-1 to 3-4) for four pixels (four second pixels). The photoelectric conversion film 3 is, for example, a photoelectric conversion film that absorbs green light (for example, light having a wavelength of 495 nm to 570 nm).

In FIG. 4(b), charge storage electrodes 1-1-1 to 1-1-4 (for four pixels) are formed in the insulating layer 10-1 for each second pixel, and a first electrode (signal readout electrode) 7-1 is formed in the center of the four pixels. As shown in FIG. 3(b), the first electrode (signal readout electrode) 7-1 and the four charge storage electrodes 1-1-1 to 1-1-4 are arranged on approximately the same plane, and the four second pixels share the first electrode (signal readout electrode) 7-1 and one charge storage section (floating diffusion (FD)) (not shown in FIG. 4(b)) connected to the first electrode (signal readout electrode) 7-1 via a conductive section 12-1 (through electrode) described later. Note that the number of second pixels sharing the first electrode (signal readout electrode) 7-1 and the charge storage section (floating diffusion (FD)) is not limited to four pixels.

Figure 4(c) shows, in the center of Figure 4(c) (the center of the four pixels), a conductive portion 12-1 (through electrode) formed in an insulating layer 10-1 and an insulating film 54-c having a negative or positive fixed charge. As shown in Figure 4(c), the insulating film 54-c is formed so as to cover the outer periphery of the conductive portion 12 (through electrode).

Figure 4(d) shows the second electrode 2-2-1, a conductive portion 12-1 (through electrode) formed in the center of Figure 4(d) (the center of the four pixels), and an insulating film 54-d having a negative or positive fixed charge. As shown in Figure 4(d), the insulating film 54-d is formed so as to cover the outer periphery of the conductive portion 12-1 (through electrode), and the conductive portion 12-1 and the second electrode 2-2-1 are insulated via the insulating film 54-d.

Figure 4(e) shows photoelectric conversion film 5-1 for four pixels, conductive portion 12-1 (through electrode) formed in the center of Figure 4(e), and insulating film 54-e having negative or positive fixed charge. The photoelectric conversion film 5-1 for four pixels is, for example, a photoelectric conversion film that absorbs red light (for example, light having a wavelength of 620 nm to 750 nm). As shown in Figure 4(e), insulating film 54-e is formed so as to cover the outer periphery of conductive portion 12-1 (through electrode), and insulating film 54-e prevents signal charge (electrons or holes) photoelectrically converted by photoelectric conversion film 5 (photoelectric conversion films 5-1 to 5-4) from being captured by conductive portion 12-1 (through electrode).

4(f), for each second pixel, charge storage electrodes 1-2-1 to 1-2-4 (for four pixels) are formed in the insulating layer 11-1, and an insulating film 54-f having a negative or positive fixed charge is formed in the center of the four pixels so as to cover the conductive portion 12-1 (through electrode) and the outer periphery of the conductive portion 12-1 (through electrode). The first electrode (signal read electrode) 8-1 is formed in the upper right of the charge storage electrode 1-2-1, the second electrode (signal read electrode) 8-2 is formed in the lower right of the charge storage electrode 1-2-2, the second electrode (signal read electrode) 8-3 is formed in the lower left of the charge storage electrode 1-2-3, and the second electrode (signal read electrode) 8-4 is formed in the upper left of the charge storage electrode 1-2-4.

As shown in Fig. 4(f), the insulating film 54-f and the insulating layer 11-1 insulate the conductive portion 12-1 (through electrode) from the charge storage electrodes 1-2-1 to 1-2-4, and the insulating layer 11 insulates the charge storage electrodes 1-2-1 to 1-2-4 from the first electrodes (signal readout electrodes) 8-1 to 8-4. As shown in Fig. 4(f), the first electrodes (signal readout electrodes) 8-1 to 8-4 and the charge storage electrodes 1-2-1 to 1-2-4 are arranged on approximately the same plane. The first electrode (signal readout electrode) 8-1 and one charge storage section (floating diffusion (FD)) (not shown in FIG. 4(f)) connected to the first electrode 8-1 via a conductive section 15 (through electrode) (not shown in FIG. 4) are shared by a pixel having a charge storage electrode 1-2-1, and the pixel to the right of that pixel (not shown in FIG. 4(f)), the pixel above (not shown in FIG. 4(f)), and the upper right pixel (not shown in FIG. 4(f)) (a total of four pixels). The first electrode (signal readout electrode) 8-2 and one charge storage section (floating diffusion (FD)) (not shown in FIG. 4(f)) connected to the first electrode 8-2 via a conductive section 15 (through electrode) (not shown in FIG. 4) are shared by a pixel having a charge storage electrode 1-2-2, and the pixel to the right of that pixel (not shown in FIG. 4(f)), the pixel below (not shown in FIG. 4(f)), and the pixel to the lower right (not shown in FIG. 4(f)) (a total of four pixels). A first electrode (signal readout electrode) 8-3 and one charge storage section (floating diffusion (FD)) (not shown in FIG. 4(f)) connected to the first electrode 8-3 via a conductive section 15 (through electrode) (not shown in FIG. 4) are shared by a pixel having a charge storage electrode 1-2-3, and the pixel to the left of that pixel (not shown in FIG. 4(f)), the pixel below (not shown in FIG. 4(f)), and the pixel to the lower left (not shown in FIG. 4(f)) (a total of four pixels). A first electrode (signal readout electrode) 8-4 and one charge storage section (floating diffusion (FD)) (not shown in FIG. 4(f)) connected to the first electrode 8-4 via a conductive section 15 (through electrode) (not shown in FIG. 4) are shared by a pixel having a charge storage electrode 1-2-4, and the pixel to the left of that pixel (not shown in FIG. 4(f)), the pixel above (not shown in FIG. 4(f)), and the upper left pixel (not shown in FIG. 4(f)) (a total of four pixels). In addition, the number of second pixels sharing the first electrode (signal readout electrode) 8-1 and the charge accumulation portion (floating diffusion (FD)) is not limited to four pixels, the number of second pixels sharing the first electrode (signal readout electrode) 8-2 and the charge accumulation portion (floating diffusion (FD)) is not limited to four pixels, the number of second pixels sharing the first electrode (signal readout electrode) 8-3 and the charge accumulation portion (floating diffusion (FD)) is not limited to four pixels, and the number of second pixels sharing the first electrode (signal readout electrode) 8-4 and the charge accumulation portion (floating diffusion (FD)) is not limited to four pixels.

The description will be given with reference to Fig. 5. Fig. 5(a) in Fig. 5 is a planar layout diagram showing a configuration example (solid-state imaging device 500a) of a solid-state imaging device according to a first embodiment of the present technology. More specifically, Fig. 5(a) is a planar layout diagram showing that a light-shielding electrode is arranged in Fig. 3(f).
Fig. 5B in Fig. 5 is a planar layout diagram showing a configuration example (solid-state imaging device 500b) of the solid-state imaging device according to the first embodiment of the present technology. More specifically, Fig. 5B is a planar layout diagram showing that a light-shielding electrode is arranged in Fig. 4F.

In Figure 5 (a), a shielding electrode 60 is formed to surround the conductive portion 12 (through electrode) and an insulating film 55-a having a negative or positive fixed charge formed to cover the outer periphery of the conductive portion 12 (through electrode), and a shielding electrode 60 is formed to surround the charge storage electrode 1-2 and the first electrode (signal readout electrode) 8.

5B, a shielding electrode 61 is formed to surround the conductive portion 12-1 (through electrode) and the insulating film 55-b having a negative or positive fixed charge formed to cover the outer periphery of the conductive portion 12-1 (through electrode). Then, based on the center of the four pixels, the shielding electrode 61 is formed to surround the charge storage electrode 1-2-1 of the upper right pixel of the four pixels, the shielding electrode 61 is formed to surround the charge storage electrode 1-2-2 of the lower right pixel of the four pixels, the shielding electrode 61 is formed to surround the charge storage electrode 1-2-3 of the lower left pixel of the four pixels, and the shielding electrode 61 is formed to surround the charge storage electrode 1-2-4 of the upper left pixel of the four pixels.

The following description will be given with reference to Figure 6. Figure 6 is a cross-sectional view showing an example configuration of a solid-state imaging device (solid-state imaging device 600) according to a first embodiment of the present technology.

The solid-state imaging device 600 comprises a semiconductor substrate 30, a first photoelectric conversion unit 600-1 that is provided above the semiconductor substrate 30 (the light incident side, or the upper side in Figure 6) and converts light into electric charges, and a second photoelectric conversion unit 600-2 that is provided above the first photoelectric conversion unit 600-1 (the light incident side, or the upper side in Figure 6) and converts light into electric charges.

The first photoelectric conversion unit 600-1 includes a first electrode 8 (a readout electrode, which is the lower electrode in Figure 6), a second electrode 2-2 (the upper electrode in Figure 6), and a photoelectric conversion film 5 arranged between the first electrode (readout electrode) 8 and the second electrode 2-2.

The second photoelectric conversion unit 600-2 includes a first electrode 7 (a readout electrode, which is the lower electrode in Figure 6), a second electrode 2-1 (the upper electrode in Figure 6), and a photoelectric conversion film 3 arranged between the first electrode (readout electrode) 7 and the second electrode 2-1.

In the first photoelectric conversion section 600-1, a transfer layer 6 is disposed between the first electrode 8 and the photoelectric conversion film 5, and a charge storage electrode 1-2 is disposed at a distance from the first electrode 8 and in the insulating layer 11 facing the photoelectric conversion film 5 (transfer layer 6) through the insulating layer 11 below the transfer layer 6. On the other hand, in the second photoelectric conversion section 600-2, a transfer layer 4 is disposed between the first electrode 7 and the photoelectric conversion film 3, and a charge storage electrode 1-1 is disposed at a distance from the first electrode 7 and in the insulating layer 10 facing the photoelectric conversion film 3 (transfer layer 4) through the insulating layer 10 below the transfer layer 4.

The first electrode 7 of the second photoelectric conversion unit 600-2 and the charge storage unit 41 formed in the semiconductor substrate 30 are electrically connected through the conductive portion (through electrode) 12 that penetrates the first photoelectric conversion unit 600-1. That is, in order to electrically connect the first electrode 7 of the second photoelectric conversion unit 600-2 and the charge storage unit 41 formed in the semiconductor substrate 30, the solid-state imaging device 600 has a connection hole 1214-6 that penetrates the insulating layer 10, the first photoelectric conversion unit 600-1, and the semiconductor substrate 30. A conductive portion (through electrode) 12 and a conductive portion (through electrode) 14 are formed in the connection hole 1214-6, and the conductive portion (through electrode) 12 connected to the first electrode 7 and the conductive portion (through electrode) 14 connected to the charge storage unit 41 are connected through the via 13. The photodiode (PD) 9 formed in the semiconductor substrate 30 is connected to the charge storage unit 42. Further, in order to electrically connect the first electrode 8 of the first photoelectric conversion unit 600-1 and the charge accumulation unit 43 formed in the semiconductor substrate 30, a connection hole 150-6 is formed penetrating the insulating layer 11 and the semiconductor substrate 30. That is, the first electrode 8 is connected to the charge accumulation unit 43 via a conductive portion (penetrating electrode) 15 formed in the connection hole 150-6.

Within the connection hole 1214-6, an insulating film 76 having a high dielectric constant material is formed between the conductive portion 12 (through electrode) and the insulating layer 10, the second electrode 2-2 below the insulating layer 10, the photoelectric conversion film 5 below the second electrode 2-2, the transfer layer 6 below the photoelectric conversion film 5, and the insulating layer 11 below the transfer layer 6, so as to cover the outer periphery of the conductive portion 12 (through electrode), and an insulating film 56 having a fixed charge of the same type as the charge accumulated in the charge accumulation portion 41 is formed between the conductive portion 12 (through electrode) and the insulating layer 10, the second electrode 2-2 below the insulating layer 10, the photoelectric conversion film 5 below the second electrode 2-2, the transfer layer 6 below the photoelectric conversion film 5, and the insulating layer 11 below the transfer layer 6, so as to cover the outer periphery of the insulating film 76 having a high dielectric constant material. In detail, with the connection hole 1214-16 in Figure 6 being used as the center reference in the left-right direction in the figure, on the left side, an insulating layer 10, a second electrode 2-2 below the insulating layer 10, a photoelectric conversion film 5 below the second electrode 2-2, a transfer layer 6 below the photoelectric conversion film 5, an insulating layer 11 below the transfer layer 6, an insulating film 56-1 (56), an insulating film 76-1 (76), and a conductive portion 12 are formed in this order, and on the right side, an insulating layer 10, a second electrode 2-2 below the insulating layer 10, a photoelectric conversion film 5 below the second electrode 2-2, a transfer layer 6 below the photoelectric conversion film 5, an insulating layer 11 below the transfer layer 6, an insulating film 56-2 (56), an insulating film 76-1 (76), and a conductive portion 12 are formed in this order. When viewed in the top-bottom direction in FIG. 6 , the insulating film 56 and the insulating film 76 are formed to extend from the first electrode 7 formed in the insulating layer 10 to the via 13 formed in the insulating layer 11 .

The insulating film 56 is an insulating film having a negative fixed charge when the signal charge to be read out is an electron, and an insulating film having a positive fixed charge when the signal charge to be read out is a hole. By including the insulating film 56 in the solid-state imaging device 600, the signal charge photoelectrically converted by the photoelectric conversion film 5 is stored in the transfer layer 6 above the storage electrode 1-2 without being captured by the conductive portion 12 (through electrode).

When the insulating film 56 is an insulating film having a negative fixed charge, the insulating film 56 may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, porphyrium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, the insulating film 56 may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

When the insulating film 56 is an insulating film having a positive fixed charge, the insulating film 56 may contain, for example, at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, the insulating film 56 may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

By using the insulating film 76 having a high dielectric constant material, it is possible to further reduce the influence of potential modulation from the through electrode. The insulating film 76 having a high dielectric constant material can be configured to include at least one selected from the group consisting of hafnium oxide (HfO ₂ ), aluminum oxide (Al ₂ O ₃ ), titanium oxide (TiO ₂ ), and STO (strontium titanium oxide).

The insulating film 56 having a fixed charge and the insulating film 76 having a high dielectric constant material may be constructed as a two-layer structure (two film structures), but is not limited to this. For example, the insulating film 56 having a fixed charge and the insulating film 76 having a high dielectric constant material may be formed as one layer (one film).

Finally, an explanation will be given using FIG. 18. FIG. 18 is a diagram showing an example of the results of a comparison between an insulating film having a fixed charge and an insulating film having no fixed charge. More specifically, FIG. 18(a) in FIG. 18 shows an insulating film 5018 having no fixed charge (the left side in FIG. 18(a) shows insulating film 5018-1, and the right side in FIG. 18(b) shows insulating film 5018-2) formed so as to cover the outer periphery of the conductive portion 12. FIG. 18(b) in FIG. 18 shows an insulating film 518 having a fixed charge (negative fixed charge m in FIG. 18(b)) formed so as to cover the outer periphery of the conductive portion 12 (the left side in FIG. 18(b) shows insulating film 518-1, and the right side in FIG. 18(b) shows insulating film 518-2).

As shown in Figure 18(a), the signal charge (electrons in Figure 18(a)) generated by photoelectric conversion in the photoelectric conversion film 5 is captured by the conductive portion 12 (through electrode) as shown by arrow S18a, reducing the aperture ratio of the photoelectric conversion film 5 and worsening the afterimage and random noise.

As shown in FIG. 18(b), the signal charge (electrons in FIG. 18(b)) generated by photoelectric conversion in the photoelectric conversion film 5 is accumulated in the transfer layer 6 without being captured by the conductive portion 12 (through electrode) as shown by arrow S18b, so that the aperture ratio of the photoelectric conversion film 5 does not decrease, afterimages and random noise do not worsen, and dark current is improved. Furthermore, since a shielding electrode as described in FIG. 5 is not required, the amount of electrons in the photodiode (PD), for example, can be increased depending on the amount not required. Also, the area of the charge storage electrode 1-2 can be increased depending on the space where a shielding electrode is not required.

The above description of the solid-state imaging device of the first embodiment (example 1 of solid-state imaging device) of the present technology can be applied to the solid-state imaging devices of the second to sixth embodiments of the present technology described below, unless there is any particular technical contradiction.

3. Second embodiment (second example of solid-state imaging device)
A solid-state imaging device according to a second embodiment of the present technology (second example of a solid-state imaging device) will be described with reference to FIGS.

First, an explanation will be given with reference to Fig. 7. Fig. 7 is a cross-sectional view showing an example configuration (solid-state imaging device 700) of a solid-state imaging device according to a second embodiment of the present technology.

The solid-state imaging device 700 comprises a semiconductor substrate 30, a first photoelectric conversion unit 700-1 that is provided above the semiconductor substrate 30 (the light incident side, or the upper side in Figure 7) and converts light into electric charges, and a second photoelectric conversion unit 700-2 that is provided above the first photoelectric conversion unit 700-1 (the light incident side, or the upper side in Figure 7) and converts light into electric charges.

The first photoelectric conversion unit 700-1 includes a first electrode 8 (a readout electrode, which is the lower electrode in Figure 7), a second electrode 2-2 (the upper electrode in Figure 7), and a photoelectric conversion film 5 arranged between the first electrode (readout electrode) 8 and the second electrode 2-2.

The second photoelectric conversion unit 700-2 includes a first electrode 7 (a readout electrode, which is the lower electrode in Figure 7), a second electrode 2-1 (the upper electrode in Figure 7), and a photoelectric conversion film 3 arranged between the first electrode (readout electrode) 7 and the second electrode 2-1.

In the first photoelectric conversion section 700-1, a transfer layer 6 is disposed between the first electrode 8 and the photoelectric conversion film 5, and a charge storage electrode 1-2 is disposed at a distance from the first electrode 8 and in the insulating layer 11 facing the photoelectric conversion film 5 (transfer layer 6) through the insulating layer 11 below the transfer layer 6. On the other hand, in the second photoelectric conversion section 700-2, a transfer layer 4 is disposed between the first electrode 7 and the photoelectric conversion film 3, and a charge storage electrode 1-1 is disposed at a distance from the first electrode 7 and in the insulating layer 10 facing the photoelectric conversion film 3 (transfer layer 4) through the insulating layer 10 below the transfer layer 4.

The first electrode 7 of the second photoelectric conversion unit 700-2 and the charge storage unit 41 formed in the semiconductor substrate 30 are electrically connected through the conductive portion (through electrode) 12 that penetrates the first photoelectric conversion unit 700-1. That is, in order to electrically connect the first electrode 7 of the second photoelectric conversion unit 700-2 and the charge storage unit 41 formed in the semiconductor substrate 30, the solid-state imaging device 700 has a connection hole 1214-7 that penetrates the insulating layer 10, the first photoelectric conversion unit 700-1, and the semiconductor substrate 30. A conductive portion (through electrode) 12 and a conductive portion (through electrode) 14 are formed in the connection hole 1214-7, and the conductive portion (through electrode) 12 connected to the first electrode 7 and the conductive portion (through electrode) 14 connected to the charge storage unit 41 are connected through the via 13. The photodiode (PD) 9 formed in the semiconductor substrate 30 is connected to the charge storage unit 42. Further, in order to electrically connect the first electrode 8 of the first photoelectric conversion unit 700-1 and the charge accumulation unit 43 formed in the semiconductor substrate 30, a connection hole 150-7 is formed penetrating the insulating layer 11 and the semiconductor substrate 30. That is, the first electrode 8 is connected to the charge accumulation unit 43 via a conductive portion (penetrating electrode) 15 formed in the connection hole 150-7.

Within the connection hole 1214-7, an insulating film 57 having a fixed charge of the same type as the charge accumulated in the charge accumulation section 41 is formed between the conductive section 12 (through electrode) and the insulating layer 10, the second electrode 2-2 below the insulating layer 10, the photoelectric conversion film 5 below the second electrode 2-2, the transfer layer 6 below the photoelectric conversion film 5, and the insulating layer 11 below the transfer layer 6, so as to cover the outer periphery of the conductive section 12 (through electrode). 7 is taken as the center reference in the horizontal direction in the figure, the insulating layer 10, the second electrode 2-2 below the insulating layer 10, the photoelectric conversion film 5 below the second electrode 2-2, the transfer layer 6 below the photoelectric conversion film 5, the insulating layer 11 below the transfer layer 6, the insulating film 57-1 (57), and the conductive portion 12 are formed in this order on the left side, and the insulating layer 10, the second electrode 2-2 below the insulating layer 10, the photoelectric conversion film 5 below the second electrode 2-2, the transfer layer 6 below the photoelectric conversion film 5, the insulating layer 11 below the transfer layer 6, the insulating film 57-2 (57), and the conductive portion 12 are formed in this order on the right side. When viewed in the vertical direction in FIG. 7, the insulating film 57 is formed extending from the insulating film 57-3 (57) formed in a planar shape (solid shape) on the insulating layer 10 to the via 13 formed in the insulating layer 11.

7, that is, after the semiconductor substrate 30, the first photoelectric conversion unit 700-1, and the insulating layer 10 are formed, the connection hole 1214-7 is formed from the position of Q7 to the position of the first electrode 8 (via 13) as a height level (vertical direction in FIG. 7), and the insulating film 57 is formed by embedding it in the connection hole 1214-7 by, for example, the ALD method, and the insulating film 57-3 (57) is formed in a solid (flat) shape on the insulating layer 10. Note that the insulating film 57-3 (57) may be removed by etching or the like after the film formation.

The insulating film 57 is an insulating film having a negative fixed charge when the signal charge to be read out is an electron, and an insulating film having a positive fixed charge when the signal charge to be read out is a hole. By including the insulating film 57 in the solid-state imaging device 700, the signal charge photoelectrically converted by the photoelectric conversion film 5 is stored in the transfer layer 6 above the storage electrode 1-2 without being captured by the conductive portion 12 (through electrode).

When the insulating film 57 is an insulating film having a negative fixed charge, the insulating film 57 may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, porphyrium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, the insulating film 57 may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

When the insulating film 57 is an insulating film having a positive fixed charge, the insulating film 57 may contain, for example, at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, the insulating film 57 may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

Next, an explanation will be given with reference to Fig. 8. Fig. 8 is a cross-sectional view showing an example configuration (solid-state imaging device 800) of a solid-state imaging device according to a second embodiment of the present technology.

The solid-state imaging device 800 comprises a semiconductor substrate 30, a first photoelectric conversion unit 800-1 that is provided above the semiconductor substrate 30 (the light incident side, or the upper side in Figure 8) and converts light into electric charges, and a second photoelectric conversion unit 800-2 that is provided above the first photoelectric conversion unit 800-1 (the light incident side, or the upper side in Figure 8) and converts light into electric charges.

The first photoelectric conversion unit 800-1 includes a first electrode 8 (a readout electrode, which is the lower electrode in Figure 8), a second electrode 2-2 (the upper electrode in Figure 8), and a photoelectric conversion film 5 arranged between the first electrode (readout electrode) 8 and the second electrode 2-2.

The second photoelectric conversion unit 800-2 includes a first electrode 7 (a readout electrode, which is the lower electrode in Figure 8), a second electrode 2-1 (the upper electrode in Figure 8), and a photoelectric conversion film 3 arranged between the first electrode (readout electrode) 7 and the second electrode 2-1.

In the first photoelectric conversion section 800-1, a transfer layer 6 is disposed between the first electrode 8 and the photoelectric conversion film 5, and a charge storage electrode 1-2 is disposed at a distance from the first electrode 8 and in the insulating layer 11 facing the photoelectric conversion film 5 (transfer layer 6) via the insulating layer 11 below the transfer layer 6. On the other hand, in the second photoelectric conversion section 800-2, a transfer layer 4 is disposed between the first electrode 7 and the photoelectric conversion film 3, and a charge storage electrode 1-1 is disposed at a distance from the first electrode 7 and in the insulating layer 10 facing the photoelectric conversion film 3 (transfer layer 4) via the insulating layer 10 below the transfer layer 4.

The first electrode 7 of the second photoelectric conversion unit 800-2 is electrically connected to the charge storage unit 41 formed in the semiconductor substrate 30 via the conductive portion (through electrode) 12-2 that penetrates the first photoelectric conversion unit 800-1 and the semiconductor substrate 30. That is, in order to electrically connect the first electrode 7 of the second photoelectric conversion unit 800-2 to the charge storage unit 41 formed in the semiconductor substrate 30, the solid-state imaging device 800 has a connection hole 1214-8 that penetrates the insulating layer 10, the first photoelectric conversion unit 800-1, and the semiconductor substrate 30. A conductive portion (through electrode) 12-2 is formed in the connection hole 1214-8, and the first electrode 7 is connected to the charge storage unit 41 via the conductive portion (through electrode) 12-2. The photodiode (PD) 9 formed in the semiconductor substrate 30 is connected to the charge storage unit 42. Further, in order to electrically connect the first electrode 8 of the first photoelectric conversion unit 800-1 and the charge accumulation unit 43 formed in the semiconductor substrate 30, a connection hole 150-8 is formed penetrating the insulating layer 11 and the semiconductor substrate 30. That is, the first electrode 8 is connected to the charge accumulation unit 43 via a conductive portion (penetrating electrode) 15 formed in the connection hole 150-8.

In the connection hole 1214-8, an insulating film 58 having a fixed charge of the same type as the charge stored in the charge storage section 41 is formed between the conductive section 12-2 (through electrode) and the insulating layer 10, the first photoelectric conversion section 800-1, and the semiconductor substrate 30 so as to cover the outer periphery of the conductive section 12-2 (through electrode). In more detail, with the connection hole 1214-8 in FIG. 8 as the center reference in the left-right direction in the figure, the insulating layer 10, the first photoelectric conversion section 800-1, and the semiconductor substrate 30, the insulating film 58-1 (58), and the conductive section 12-2 are formed in this order on the left side, and the insulating layer 10, the insulating layer 10, the first photoelectric conversion section 800-1, and the semiconductor substrate 30, the insulating film 58-2 (58), and the conductive section 12-2 are formed in this order on the right side. When viewed in the vertical direction in FIG. 8 , the insulating film 58 is formed to extend from the first electrode 7 formed on the insulating layer 10 to the charge accumulation portion 41 formed on the semiconductor substrate 30 .

In the solid-state imaging device 800, after formation up to Q8 in FIG. 8, i.e., after forming the semiconductor substrate 30, the first photoelectric conversion section 800-1 and the insulating layer 10, the height level (vertical direction in FIG. 8) is formed from the position of Q8 to the position of the charge storage section 41, penetrating the connection hole 1214-8, and the conductive section 12-2 and the insulating film 58 are embedded in the connection hole 1214-87.

The insulating film 58 is an insulating film having a negative fixed charge when the signal charge to be read out is an electron, and is an insulating film having a positive fixed charge when the signal charge to be read out is a hole. By including the insulating film 58 in the solid-state imaging device 800, the signal charge photoelectrically converted by the photoelectric conversion film 5 is stored in the transfer layer 6 above the storage electrode 1-2 without being captured by the conductive portion 12-2 (through electrode).

When the insulating film 58 is an insulating film having a negative fixed charge, the insulating film 58 may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, porphyrium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, the insulating film 58 may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

When the insulating film 58 is an insulating film having a positive fixed charge, the insulating film 58 may contain, for example, at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, the insulating film 58 may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

The following description will be given with reference to Figure 9. Figure 9 is a cross-sectional view showing an example configuration (solid-state imaging device 900) of a solid-state imaging device according to a second embodiment of the present technology.

The solid-state imaging device 900 comprises a semiconductor substrate 30, a first photoelectric conversion unit 900-1 that is provided above the semiconductor substrate 30 (the light incident side, or the upper side in FIG. 9) and converts light into electric charges, and a second photoelectric conversion unit 900-2 that is provided above the first photoelectric conversion unit 900-1 (the light incident side, or the upper side in FIG. 9) and converts light into electric charges.

The first photoelectric conversion unit 900-1 includes a first electrode 8 (a readout electrode, which is the lower electrode in Figure 9), a second electrode 2-2 (the upper electrode in Figure 9), and a photoelectric conversion film 5 arranged between the first electrode (readout electrode) 8 and the second electrode 2-2.

The second photoelectric conversion unit 900-2 includes a first electrode 7 (a readout electrode, which is the lower electrode in Figure 9), a second electrode 2-1 (the upper electrode in Figure 9), and a photoelectric conversion film 3 arranged between the first electrode (readout electrode) 7 and the second electrode 2-1.

In the first photoelectric conversion section 900-1, a transfer layer 6 is disposed between the first electrode 8 and the photoelectric conversion film 5, and a charge storage electrode 1-2 is disposed at a distance from the first electrode 8 and in the insulating layer 11 facing the photoelectric conversion film 5 (transfer layer 6) through the insulating layer 11 below the transfer layer 6. On the other hand, in the second photoelectric conversion section 900-2, a transfer layer 4 is disposed between the first electrode 7 and the photoelectric conversion film 3, and a charge storage electrode 1-1 is disposed at a distance from the first electrode 7 and in the insulating layer 10 facing the photoelectric conversion film 3 (transfer layer 4) through the insulating layer 10 below the transfer layer 4.

The first electrode 7 of the second photoelectric conversion unit 900-2 is electrically connected to the charge storage unit 41 formed in the semiconductor substrate 30 via a conductive portion (through electrode) 12-3 that penetrates the first photoelectric conversion unit 900-1 and the semiconductor substrate 30. That is, in order to electrically connect the first electrode 7 of the second photoelectric conversion unit 900-2 to the charge storage unit 41 formed in the semiconductor substrate 30, a connection hole 1214-9 that penetrates the insulating layer 10, the first photoelectric conversion unit 900-1, and the semiconductor substrate 30 is formed in the solid-state imaging device 900. A conductive portion (through electrode) 12-3 is formed in the connection hole 1214-9, and the first electrode 7 is connected to the charge storage unit 41 via the conductive portion (through electrode) 12-3. The photodiode (PD) 9 formed in the semiconductor substrate 30 is connected to the charge storage unit 42. Further, in order to electrically connect the first electrode 8 of the first photoelectric conversion unit 900-1 and the charge accumulation unit 43 formed in the semiconductor substrate 30, a connection hole 150-9 is formed penetrating the insulating layer 11 and the semiconductor substrate 30. That is, the first electrode 8 is connected to the charge accumulation unit 43 via a conductive portion (penetrating electrode) 15 formed in the connection hole 150-9.

In the connection hole 1214-9, an insulating film 59 having a fixed charge of the same type as the charge stored in the charge storage section 41 is formed between the conductive section 12-3 (through electrode) and the insulating layer 10, the first photoelectric conversion section 900-1, and the semiconductor substrate 30 so as to cover the outer periphery of the conductive section 12-3 (through electrode). In more detail, with the connection hole 1214-9 in FIG. 9 as the center reference in the left-right direction in the figure, the insulating layer 10, the first photoelectric conversion section 900-1, and the semiconductor substrate 30, the insulating film 59-1 (59), and the conductive section 12-3 are formed in this order on the left side, and the insulating layer 10, the insulating layer 10, the first photoelectric conversion section 900-1, and the semiconductor substrate 30, the insulating film 59-2 (59), and the conductive section 12-3 are formed in this order on the right side. When viewed in the vertical direction in Figure 9, the insulating film 59 is formed to extend from the insulating film 59-3 (59) formed in a solid (planar) shape on the insulating layer 10 to the charge storage section 41 formed on the semiconductor substrate 30.

9, that is, after the semiconductor substrate 30, the first photoelectric conversion unit 900-1, and the insulating layer 10 are formed, the connection hole 1214-9 is formed from the position of Q9 to the position of the charge storage unit 41 in terms of height level (vertical direction in FIG. 9), and the insulating film 59 is formed by embedding it in the connection hole 1214-9 by, for example, the ALD method, and the insulating film 59-3 (59) is formed in a solid (flat) shape on the insulating layer 10. Note that the insulating film 59-3 (59) may be removed by etching or the like after the film formation.

The insulating film 59 is an insulating film having a negative fixed charge when the signal charge to be read out is an electron, and an insulating film having a positive fixed charge when the signal charge to be read out is a hole. By including the insulating film 59 in the solid-state imaging device 900, the signal charge photoelectrically converted by the photoelectric conversion film 5 is stored in the transfer layer 6 above the storage electrode 1-2 without being captured by the conductive portion 12-3 (through electrode).

When the insulating film 59 is an insulating film having a negative fixed charge, the insulating film 59 may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, porphyrium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, the insulating film 59 may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

When the insulating film 59 is an insulating film having a positive fixed charge, the insulating film 59 may contain, for example, at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, the insulating film 59 may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

Finally, we will explain using Figure 10. Figure 10 is a cross-sectional view showing an example configuration (solid-state imaging device 1000) of a solid-state imaging device according to a second embodiment of the present technology.

The solid-state imaging device 1000 comprises a semiconductor substrate 30, a first photoelectric conversion unit 1000-1 that is provided above the semiconductor substrate 30 (the light incident side, or the upper side in Figure 10) and converts light into electric charges, and a second photoelectric conversion unit 1000-2 that is provided above the first photoelectric conversion unit 1000-1 (the light incident side, or the upper side in Figure 10) and converts light into electric charges.

The first photoelectric conversion unit 1000-1 includes a first electrode 8 (a readout electrode, which is the lower electrode in Figure 10), a second electrode 2-2 (the upper electrode in Figure 10), and a photoelectric conversion film 5 arranged between the first electrode (readout electrode) 8 and the second electrode 2-2.

The second photoelectric conversion unit 1000-2 includes a first electrode 7 (a readout electrode, which is the lower electrode in Figure 10), a second electrode 2-1 (the upper electrode in Figure 10), and a photoelectric conversion film 3 arranged between the first electrode (readout electrode) 7 and the second electrode 2-1.

In the first photoelectric conversion section 1000-1, a transfer layer 6 is disposed between the first electrode 8 and the photoelectric conversion film 5, and a charge storage electrode 1-2 is disposed at a distance from the first electrode 8 and in the insulating layer 11 facing the photoelectric conversion film 5 (transfer layer 6) through the insulating layer 11 below the transfer layer 6. On the other hand, in the second photoelectric conversion section 1000-2, a transfer layer 4 is disposed between the first electrode 7 and the photoelectric conversion film 3, and a charge storage electrode 1-1 is disposed at a distance from the first electrode 7 and in the insulating layer 10 facing the photoelectric conversion film 3 (transfer layer 4) through the insulating layer 10 below the transfer layer 4.

The first electrode 7 of the second photoelectric conversion unit 1000-2 and the charge storage unit 41 formed in the semiconductor substrate 30 are electrically connected through the conductive portion (through electrode) 12 that penetrates the first photoelectric conversion unit 1000-1. That is, in order to electrically connect the first electrode 7 of the second photoelectric conversion unit 1000-2 and the charge storage unit 41 formed in the semiconductor substrate 30, the solid-state imaging device 1000 has a connection hole 1214-10 that penetrates the insulating layer 10, the first photoelectric conversion unit 1000-1, and the semiconductor substrate 30. A conductive portion (through electrode) 12 and a conductive portion (through electrode) 14 are formed in the connection hole 1214-10, and the conductive portion (through electrode) 12 connected to the first electrode 7 and the conductive portion (through electrode) 14 connected to the charge storage unit 41 are connected through the via 13. The photodiode (PD) 9 formed in the semiconductor substrate 30 is connected to the charge storage unit 42. Further, in order to electrically connect the first electrode 8 of the first photoelectric conversion unit 1000-1 and the charge accumulation unit 43 formed in the semiconductor substrate 30, a connection hole 150-10 is formed penetrating the insulating layer 11 and the semiconductor substrate 30. That is, the first electrode 8 is connected to the charge accumulation unit 43 via a conductive portion (penetrating electrode) 15 formed in the connection hole 150-10.

In the connection hole 1214-10, an insulating film 510 having a fixed charge of the same type as the charge accumulated in the charge accumulation section 41 is formed between the conductive section 12 (through electrode), the photoelectric conversion film 5, the transfer layer 6 below the photoelectric conversion film 5 (lower side in FIG. 10), and the insulating layer 11 below the transfer layer 6 so as to cover the outer periphery of the conductive section 12 (through electrode). In more detail, with the connection hole 1214-10 in FIG. 10 as the center reference in the left-right direction in the figure, the photoelectric conversion film 5, the transfer layer 6, the insulating film 510-1 (510), and the conductive section 12 are formed in this order on the left side, and the photoelectric conversion film 5, the transfer layer 6, the insulating film 510-2 (510), and the conductive section 12 are formed in this order on the right side. When viewed in the vertical direction in FIG. 10 , the insulating film 510 is formed to extend from the upper part of the photoelectric conversion portion 5 (the upper side in FIG. 10 ) to the via 13 formed in the insulating layer 11 .

The insulating film 510 is an insulating film having a negative fixed charge when the signal charge to be read out is an electron, and is an insulating film having a positive fixed charge when the signal charge to be read out is a hole. By including the insulating film 510 in the solid-state imaging device 1000, the signal charge photoelectrically converted by the photoelectric conversion film 5 is stored in the transfer layer 6 above the storage electrode 1-2 without being captured by the conductive portion 12 (through electrode).

When the insulating film 510 is an insulating film having a negative fixed charge, the insulating film 510 may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, porphyrium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, the insulating film 510 may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

When the insulating film 510 is an insulating film having a positive fixed charge, the insulating film 510 may contain, for example, at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, the insulating film 510 may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

The above description of the solid-state imaging device of the second embodiment (example 2 of solid-state imaging device) of the present technology can be applied to the solid-state imaging device of the first embodiment of the present technology described above and the solid-state imaging devices of the third to sixth embodiments of the present technology described below, unless there is any particular technical contradiction.

4. Third embodiment (third example of solid-state imaging device)
A solid-state imaging device according to a third embodiment of the present technology (third example of a solid-state imaging device) will be described with reference to FIGS. 11 and 12. FIG.

First, an explanation will be given with reference to Fig. 11. Fig. 11 is a cross-sectional view showing an example configuration (solid-state imaging device 1100) of a solid-state imaging device according to a third embodiment of the present technology.

The solid-state imaging device 1100 comprises a semiconductor substrate 30, a first photoelectric conversion unit 1100-1 that is provided above the semiconductor substrate 30 (the light incident side, or the upper side in FIG. 11) and converts light into electric charges, and a second photoelectric conversion unit 1100-2 that is provided above the first photoelectric conversion unit 1100-1 (the light incident side, or the upper side in FIG. 11) and converts light into electric charges.

The first photoelectric conversion section 1100-1 includes a first electrode 8 (a readout electrode, which is the lower electrode in FIG. 11), a second electrode 2-2 (an upper electrode in FIG. 11), and a photoelectric conversion film 5 arranged between the first electrode (readout electrode) 8 and the second electrode 2-2. In the first photoelectric conversion section 1100-1, a transfer layer 6 is arranged between the first electrode 8 and the photoelectric conversion film 5, and a charge storage electrode 1-2 is arranged at a distance from the first electrode 8 and is arranged in the insulating layer 11, facing the photoelectric conversion film 5 (transfer layer 6) via the insulating layer 11 below the transfer layer 6.

The second photoelectric conversion section 1100-2 includes a first electrode 7000, a second electrode 2-1, a transfer layer 4-1, and a photoelectric conversion film 3 arranged between the second electrode 2-1 and the transfer layer 4-1, and further includes a charge storage electrode 1-10 arranged at a distance from the first electrode 7000 and facing the transfer layer 4-1 via the insulating layer 10A above the transfer layer 4-1.

The first electrode 7000 penetrates the photoelectric conversion film 3 and the second electrode 2-1, and the first electrode 7000 is electrically connected to the charge storage section 41 formed in the semiconductor substrate 30. That is, in order to electrically connect the first electrode 7000 of the second photoelectric conversion section 1100-2 to the charge storage section 41 formed in the semiconductor substrate 30, the solid-state imaging device 1100 has a connection hole 7000-1 that penetrates the photoelectric conversion film 3, the second electrode 2-1, and the insulating layer 10-1 included in the second photoelectric conversion section 1100-2, and a connection hole 1214-11 that penetrates the first photoelectric conversion section 1100-1 (note that the first photoelectric conversion section 1100-1 is configured to include the insulating layer 10-2) and the semiconductor substrate 30. A conductive portion (through electrode) 12-11 constituting the first electrode 7000 is formed in the connection hole 7000-1, and a conductive portion (through electrode) 12 and a conductive portion (through electrode) 14 are formed in the connection hole 1214-11. The first electrode 7000 (conductive portion 12-11) and the conductive portion (through electrode) 12 are connected through a via 14 located at the boundary (P11) between the insulating layer 10-1 and the insulating layer 10-2, and the conductive portion (through electrode) 12 and the conductive portion (through electrode) 14 connected to the charge storage portion 41 are connected through a via 13 formed in the insulating layer 11. A photodiode (PD) 9 formed in the semiconductor substrate 30 is connected to the charge storage portion 42. Further, in order to electrically connect the first electrode 8 of the first photoelectric conversion unit 1000-1 and the charge accumulation unit 43 formed in the semiconductor substrate 30, a connection hole 150-11 is formed penetrating the insulating layer 11 and the semiconductor substrate 30. That is, the first electrode 8 is connected to the charge accumulation unit 43 via a conductive portion (penetrating electrode) 15 formed in the connection hole 150-11.

In the connection hole 7000-1, an insulating film 511a having a fixed charge of the same type as the charge stored in the charge storage section 41 is formed between the conductive section 12-11 (through electrode) constituting the first electrode 7000, the photoelectric conversion film 3, the second electrode 2-1 below the photoelectric conversion film 3 (lower side in FIG. 11), and the insulating layer 10-1 below the second electrode 2-1, so as to cover the outer periphery of the conductive section 12-11 (through electrode) constituting the first electrode 7000. In detail, with the connection hole 7000-1 in FIG. 11 as the center reference in the left-right direction in the figure, the photoelectric conversion film 3, the second electrode 2-1, the insulating layer 10-1, the insulating film 511a-1 (511a), and the conductive section 12-11 are formed in this order on the left side, and the photoelectric conversion film 3, the second electrode 2-1, the insulating layer 10-1, the insulating film 511a-2 (511a), and the conductive section 12-11 are formed in this order on the right side. 11, the insulating film 511a is formed to extend from the upper portion of the photoelectric conversion portion 3 (the upper side in FIG. 11) to the via 14 formed in the insulating layer 10-1.

In the connection hole 1214-11, an insulating film 511b having the same type of fixed charge as the charge stored in the charge storage section 41 is formed between the conductive section 12 (through electrode) and the first photoelectric conversion section 1100-1 so as to cover the outer periphery of the conductive section 12 (through electrode). In detail, with the connection hole 1214-11 in FIG. 11 as the center reference in the horizontal direction in the figure, the first photoelectric conversion section 1100-1, the insulating film 511b-1 (511b), and the conductive section 12 are formed in this order on the left side, and the first photoelectric conversion section 1100-1, the insulating film 511b-2 (511), and the conductive section 12 are formed in this order on the right side. When viewed in the vertical direction in FIG. 11, the insulating film 511b is formed extending from the via 14 formed in the insulating layer 10-2 to the via 13 formed in the insulating layer 11.

The insulating film 511a is an insulating film having a negative fixed charge when the signal charge to be read out is an electron, and is an insulating film having a positive fixed charge when the signal charge to be read out is a hole. By including the insulating film 511a in the solid-state imaging device 1100, the signal charge photoelectrically converted by the photoelectric conversion film 3 is stored in the transfer layer 4-1 below the storage electrode 1-10 without being captured by the conductive portion 12-11 (through electrode).

When the insulating film 511a is an insulating film having a negative fixed charge, the insulating film 511a may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, porphyrium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, the insulating film 511a may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

When the insulating film 511a is an insulating film having a positive fixed charge, the insulating film 511a may contain, for example, at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, the insulating film 511a may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

The insulating film 511b is an insulating film having a negative fixed charge when the signal charge to be read out is an electron, and is an insulating film having a positive fixed charge when the signal charge to be read out is a hole. By including the insulating film 511b in the solid-state imaging device 1100, the signal charge photoelectrically converted by the photoelectric conversion film 5 is stored in the transfer layer 6 above the storage electrode 1-2 without being captured by the conductive portion 12 (through electrode).

In the case where the insulating film 511b is an insulating film having a negative fixed charge, the insulating film 511b may include at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, porphyrium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, the insulating film 511b may include an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

When the insulating film 511b is an insulating film having a positive fixed charge, the insulating film 511b may contain, for example, at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, the insulating film 511b may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

Figure 12 is a diagram for explaining a manufacturing method of a solid-state imaging device 1200 which is a third embodiment of the present technology.

The device 1200a shown in Figure 12(a) has the second photoelectric conversion section 1100-2 shown in Figure 11 (the part above line P11 shown in Figure 11) and is, for example, a semi-finished product of a solid-state imaging device 1200 in a wafer state.

The device 1200b shown in Figure 12 (b) comprises a first photoelectric conversion section 1100-1 and a semiconductor substrate 30 (the part below line P11 shown in Figure 11), and is, for example, a semi-finished solid-state imaging device 1200 in a wafer state.

As shown by the arrow R12 in FIG. 12, the device 1200a is inverted and the device 1200a is bonded to the device 1200b to manufacture the solid-state imaging device 1200. The advantage of this process is that a high-temperature heat treatment can be applied when forming the transfer layer. Generally, photoelectric conversion films are weaker against heat than transfer layers, and if they are formed sequentially from the bottom side, the transfer layer 4 of the second photoelectric conversion section (upper layer) cannot be subjected to high heat and its characteristics will deteriorate. To avoid this, the layers are laminated separately and then bonded together. In this case, the photoelectric conversion film 3 of the second photoelectric conversion section (upper layer) also has an insulating film 511a with a fixed charge because the first electrode 7000 penetrates it.

The above description of the solid-state imaging device of the third embodiment (example 3 of solid-state imaging device) of the present technology can be applied to the solid-state imaging devices of the first and second embodiments of the present technology described above and the solid-state imaging devices of the fourth to sixth embodiments of the present technology described below, unless there is any particular technical contradiction.

5. Fourth embodiment (fourth example of solid-state imaging device)
A solid-state imaging device according to a fourth embodiment of the present technology (fourth example of a solid-state imaging device) will be described with reference to FIGS. 13 and 14. FIG.

First, an explanation will be given with reference to Fig. 13. Fig. 13 is a cross-sectional view showing an example configuration of a solid-state imaging device (solid-state imaging device 1300) according to a fourth embodiment of the present technology.

The solid-state imaging device 1300 comprises a semiconductor substrate 30, a first photoelectric conversion unit 1300-1 that is provided above the semiconductor substrate 30 (the light incident side, or the upper side in FIG. 13) and converts light into electric charges, and a second photoelectric conversion unit 1300-2 that is provided above the first photoelectric conversion unit 1300-1 (the light incident side, or the upper side in FIG. 13) and converts light into electric charges.

The first photoelectric conversion section 1300-1 includes a first electrode 8 (a readout electrode, which is the lower electrode in Figure 13), a second electrode 2-2 (the upper electrode in Figure 13), and a photoelectric conversion film 5 arranged between the first electrode (readout electrode) 8 and the second electrode 2-2.

The second photoelectric conversion section 1300-2 includes a first electrode 7 (a readout electrode, which is the lower electrode in Figure 13), a second electrode 2-1 (the upper electrode in Figure 13), and a photoelectric conversion film 3 arranged between the first electrode (readout electrode) 7 and the second electrode 2-1.

In the first photoelectric conversion section 1300-1, a transfer layer 6 is disposed between the first electrode 8 and the photoelectric conversion film 5, and a charge storage electrode 1-2 is disposed at a distance from the first electrode 8 and in the insulating layer 11 facing the photoelectric conversion film 5 (transfer layer 6) through the insulating layer 11 below the transfer layer 6. On the other hand, in the second photoelectric conversion section 1300-2, a transfer layer 4 is disposed between the first electrode 7 and the photoelectric conversion film 3, and a charge storage electrode 1-1 is disposed at a distance from the first electrode 7 and in the insulating layer 10 facing the photoelectric conversion film 3 (transfer layer 4) through the insulating layer 10 below the transfer layer 4.

The first electrode 8 of the first photoelectric conversion unit 1300-1 and the first electrode 7 of the second photoelectric conversion unit 1300-2 are electrically connected to a charge accumulation unit 44 formed on the semiconductor substrate 30 via a conductive portion 12 that penetrates the second electrode 2-2, photoelectric conversion film 5 and insulating layer 11 of the first photoelectric conversion unit 1300-1. That is, in order to electrically connect the first electrode 7 of the second photoelectric conversion section 1300-2 and the first electrode 8 of the first photoelectric conversion section 1300-1 to the charge accumulation section 44 formed in the semiconductor substrate 30, the solid-state imaging device 1300 has a connection hole 120-13 formed therethrough that penetrates the insulating layer 10 included in the second photoelectric conversion section 1300-2 and the second electrode 2-2 and photoelectric conversion film 5 included in the first photoelectric conversion section 1300-1, and a connection hole 160-13 formed therethrough that penetrates the insulating layer 11 included in the first photoelectric conversion section 1300-1 and the semiconductor substrate 30. A conductive portion (through electrode) 12 is formed in the connection hole 120-13, and a conductive portion (through electrode) 16 is formed in the connection hole 160-13. The first electrode 7 is connected to the charge storage section 44 via the conductive section (through electrode) 12 and the conductive section (through electrode) 16, and further via the transfer layer 6 included in the second photoelectric conversion section 1300-1 and the first electrode 8 connected to the transfer layer 6. By sharing the charge storage section 44 with the first electrode 7 and the first electrode 8, for example, the charge storage electrode 1-2 can be made large, and it is possible to improve the sensitivity and the saturation charge amount.

The second electrode 8 is connected to the charge storage section 44 via the conductive section (through electrode) 16. A photodiode (PD) 9 formed on the semiconductor substrate 30 is connected to the charge storage section 42.

In the connection hole 120-13, an insulating film 513 having the same type of fixed charge as the charge stored in the charge storage section 44 is formed between the conductive section 12 (through electrode), the insulating layer 10, the second electrode 2-2 below the insulating layer 10, and the photoelectric conversion film 5 below the second electrode 2-2 so as to cover the outer periphery of the conductive section 12 (through electrode). In detail, with the connection hole 120-13 in FIG. 13 as the center reference in the left-right direction in the figure, on the left side, the insulating layer 10, the second electrode 2-2 below the insulating layer 10, the photoelectric conversion film 5 below the second electrode 2-2, the insulating film 513-1 (513), and the conductive section 12 are formed in this order, and on the right side, the insulating layer 10, the second electrode 2-2 below the insulating layer 10, the photoelectric conversion film 5 below the second electrode 2-2, the insulating film 513-2 (513), and the conductive section 12 are formed in this order. When viewed in the vertical direction in Figure 13, the insulating film 513 is formed to extend from the first electrode 7 formed on the insulating layer 10 to the upper part of the transfer layer 6 (the upper side in Figure 13, the boundary between the transfer layer 6 and the photoelectric conversion film 5).

The insulating film 513 is an insulating film having a negative fixed charge when the signal charge to be read out is an electron, and is an insulating film having a positive fixed charge when the signal charge to be read out is a hole. By including the insulating film 513 in the solid-state imaging device 1300, the signal charge photoelectrically converted by the photoelectric conversion film 5 is stored in the transfer layer 6 above the storage electrode 1-2 without being captured by the conductive portion 12 (through electrode).

When the insulating film 513 is an insulating film having a negative fixed charge, the insulating film 513 may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, porphyrium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, the insulating film 513 may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

When the insulating film 513 is an insulating film having a positive fixed charge, the insulating film 513 may contain, for example, at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, the insulating film 513 may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

The following description will be given with reference to Figure 14. Figure 14 is a cross-sectional view showing an example configuration of a solid-state imaging device (solid-state imaging device 1400) according to a fourth embodiment of the present technology.

The solid-state imaging device 1400 comprises a semiconductor substrate 30, a first photoelectric conversion unit 1400-1 that is provided above the semiconductor substrate 30 (the light incident side, or the upper side in FIG. 14) and converts light into electric charges, and a second photoelectric conversion unit 1400-2 that is provided above the first photoelectric conversion unit 1400-1 (the light incident side, or the upper side in FIG. 14) and converts light into electric charges.

The first photoelectric conversion unit 1400-1 includes a first electrode 8 (a readout electrode, which is the lower electrode in Figure 14), a second electrode 2-2 (an upper electrode in Figure 14), and a photoelectric conversion film 5 arranged between the first electrode (readout electrode) 8 and the second electrode 2-2.

The second photoelectric conversion section 1400-2 includes a first electrode 7 (a readout electrode, which is the lower electrode in Figure 14), a second electrode 2-1 (the upper electrode in Figure 14), and a photoelectric conversion film 3 arranged between the first electrode (readout electrode) 7 and the second electrode 2-1.

In the first photoelectric conversion section 1400-1, a transfer layer 6 is disposed between the first electrode 8 and the photoelectric conversion film 5, and a charge storage electrode 1-2 is disposed at a distance from the first electrode 8 and in the insulating layer 11 facing the photoelectric conversion film 5 (transfer layer 6) through the insulating layer 11 below the transfer layer 6. On the other hand, in the second photoelectric conversion section 1400-2, a transfer layer 4 is disposed between the first electrode 7 and the photoelectric conversion film 3, and a charge storage electrode 1-1 is disposed at a distance from the first electrode 7 and in the insulating layer 10 facing the photoelectric conversion film 3 (transfer layer 4) through the insulating layer 10 below the transfer layer 4.

The first electrode 8 of the first photoelectric conversion section 1400-1 and the first electrode 7 of the second photoelectric conversion section 1400-2 are electrically connected to the charge accumulation section 44 formed on the semiconductor substrate 30 via the conductive section 12 penetrating the first photoelectric conversion section 1400-1. That is, in order to electrically connect the first electrode 7 of the second photoelectric conversion section 1400-2 and the first electrode 8 of the first photoelectric conversion section 1400-1 to the charge accumulation section 44 formed on the semiconductor substrate 30, the solid-state imaging device 1400 has a connection hole 120-14 that penetrates the insulating layer 10 included in the second photoelectric conversion section 1400-2 and the second electrode 2-2, photoelectric conversion film 5, and transfer layer 6 included in the first photoelectric conversion section 1400-1, and a connection hole 160-14 that penetrates the insulating layer 11 and semiconductor substrate 30 included in the first photoelectric conversion section 1400-1. A conductive portion (through electrode) 12 is formed in the connection hole 120-14, and a conductive portion (through electrode) 16 is formed in the connection hole 160-14. The first electrode 7 is connected to the charge storage portion 44 via the conductive portion (through electrode) 12 and the conductive portion (through electrode) 16, and further via the first electrode 8 that connects to the transfer layer 6 included in the second photoelectric conversion portion 1300-1. By making the charge storage portion 44 common to the first electrode 7 and the first electrode 8, for example, the charge storage electrode 1-2 can be made large, and it is possible to improve the sensitivity and saturation charge amount. In FIG. 13, the conductive portion 12 (through electrode) is in contact with the transfer layer 6, but more preferably, the conductive portion 12 (through electrode) is in contact with the first electrode 8 (signal readout electrode) through the transfer layer 6 as shown in FIG. 14.

The second electrode 8 is connected to the charge storage section 44 via the conductive section (through electrode) 16. A photodiode (PD) 9 formed on the semiconductor substrate 30 is connected to the charge storage section 42.

In the connection hole 120-14, an insulating film 514 having the same type of fixed charge as the charge stored in the charge storage section 44 is formed between the conductive section 12 (through electrode), the insulating layer 10, the second electrode 2-2 below the insulating layer 10, and the photoelectric conversion film 5 below the second electrode 2-2 so as to cover the outer periphery of the conductive section 12 (through electrode). In detail, with the connection hole 120-14 in FIG. 14 as the center reference in the left-right direction in the figure, on the left side, the insulating layer 10, the second electrode 2-2 below the insulating layer 10, the photoelectric conversion film 5 below the second electrode 2-2, the insulating film 514-1 (514), and the conductive section 12 are formed in this order, and on the right side, the insulating layer 10, the second electrode 2-2 below the insulating layer 10, the photoelectric conversion film 5 below the second electrode 2-2, the insulating film 514-2 (514), and the conductive section 12 are formed in this order. When viewed in the vertical direction in Figure 14, the insulating film 514 is formed to extend from the first electrode 7 formed on the insulating layer 10 to the upper part of the transfer layer 6 (the upper side in Figure 14, the boundary between the transfer layer 6 and the photoelectric conversion film 5).

The insulating film 514 is an insulating film having a negative fixed charge when the signal charge to be read out is an electron, and is an insulating film having a positive fixed charge when the signal charge to be read out is a hole. By including the insulating film 514 in the solid-state imaging device 1400, the signal charge photoelectrically converted by the photoelectric conversion film 5 is stored in the transfer layer 6 above the storage electrode 1-2 without being captured by the conductive portion 12 (through electrode).

When the insulating film 514 is an insulating film having a negative fixed charge, the insulating film 514 may include at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, porphyrium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, the insulating film 514 may include an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

When the insulating film 514 is an insulating film having a positive fixed charge, the insulating film 514 may contain, for example, at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, the insulating film 514 may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

The above description of the solid-state imaging device of the fourth embodiment (example 4 of solid-state imaging device) of the present technology can be applied to the solid-state imaging devices of the first to third embodiments of the present technology described above and the solid-state imaging devices of the fifth and sixth embodiments of the present technology described below, unless there is any particular technical contradiction.

6. Fifth embodiment (fifth example of solid-state imaging device)
A solid-state imaging device according to a fifth embodiment of the present technology (fifth example of a solid-state imaging device) will be described with reference to FIG. 15 .

The explanation will be given with reference to Figure 15. Figure 15 is a cross-sectional view showing an example configuration (solid-state imaging device 1500) of a solid-state imaging device according to a fifth embodiment of the present technology.

The solid-state imaging device 1500 comprises a semiconductor substrate 30, a first photoelectric conversion unit 1500-1 provided above the semiconductor substrate 30 (the light incident side, upper part in FIG. 15) and converting light into electric charges, a second photoelectric conversion unit 1500-2 provided above the first photoelectric conversion unit 1500-1 (the light incident side, upper part in FIG. 15) and converting light into electric charges, and a third photoelectric conversion unit 1500-3 provided above the second photoelectric conversion unit 1500-2 (the light incident side, upper part in FIG. 15) and converting light into electric charges.

The first photoelectric conversion unit 1500-1 includes a first electrode 8 (a readout electrode, which is the lower electrode in FIG. 15), a second electrode 2-2 (which is the upper electrode in FIG. 15), and a photoelectric conversion film 5 arranged between the first electrode (readout electrode) 8 and the second electrode 2-2. As described above, the photoelectric conversion film 5 is a photoelectric conversion film that absorbs, for example, red light (for example, light having a wavelength of 620 nm to 750 nm).

The second photoelectric conversion unit 1500-2 includes a first electrode 7 (a readout electrode, which is the lower electrode in FIG. 15), a second electrode 2-1 (an upper electrode in FIG. 15), and a photoelectric conversion film 3 arranged between the first electrode (readout electrode) 7 and the second electrode 2-1. As described above, the photoelectric conversion film 3 is a photoelectric conversion film that absorbs, for example, green light (for example, light having a wavelength of 495 nm to 570 nm).

The third photoelectric conversion unit 1500-3 includes a first electrode 78 (a readout electrode, which is the lower electrode in FIG. 15), a second electrode 2-3 (an upper electrode in FIG. 15), and a photoelectric conversion film 35 arranged between the first electrode (readout electrode) 7 and the second electrode 2-3. The photoelectric conversion film 35 is a photoelectric conversion film that absorbs, for example, blue light (for example, light having a wavelength of 425 nm to 495 nm).

In the first photoelectric conversion section 1500-1, a transfer layer 6 is disposed between the first electrode 8 and the photoelectric conversion film 5, and a charge storage electrode 1-2 is disposed at a distance from the first electrode 8 and in the insulating layer 11 facing the photoelectric conversion film 5 (transfer layer 6) through the insulating layer 11 below the transfer layer 6. In the second photoelectric conversion section 1500-2, a transfer layer 4 is disposed between the first electrode 7 and the photoelectric conversion film 3, and a charge storage electrode 1-1 is disposed at a distance from the first electrode 7 and in the insulating layer 10 facing the photoelectric conversion film 3 (transfer layer 4) through the insulating layer 10 below the transfer layer 4. Furthermore, in the second photoelectric conversion section 1500-3, a transfer layer 46 is arranged between the first electrode 78 and the photoelectric conversion film 35, and the charge storage electrode 1-3 is arranged at a distance from the first electrode 78 and is arranged in the insulating layer 10-3, facing the photoelectric conversion film 35 (transfer layer 46) via the insulating layer 10-3 below the transfer layer 46.

The first electrode 78 of the third photoelectric conversion unit 1500-3 is electrically connected to the charge accumulation unit 45 formed on the semiconductor substrate 30 via the conductive portion 12-15 that penetrates the second photoelectric conversion unit 1500-2 and the first photoelectric conversion unit 1500-1. That is, in order to electrically connect the first electrode 78 of the third photoelectric conversion unit 1500-3 to the charge accumulation unit 45 formed on the semiconductor substrate 30, the solid-state imaging device 1500 has a connection hole 1214-15-2 that penetrates the insulating layer 10-3, the second photoelectric conversion unit 1500-2, the first photoelectric conversion unit 1500-1, and the semiconductor substrate 30. A conductive portion (through electrode) 12-15 and a conductive portion (through electrode) 140 are formed in the connection hole 1214-15-2, and the conductive portion (through electrode) 12-15 connected to the first electrode 7 and the conductive portion (through electrode) 140 connected to the charge storage portion 45 are connected via a via 130 formed in the insulating layer 11.

The first electrode 7 of the second photoelectric conversion unit 1500-2 and the charge accumulation unit 41 formed in the semiconductor substrate 30 are electrically connected through the conductive portion 12 that penetrates the first photoelectric conversion unit 1500-1. That is, in order to electrically connect the first electrode 7 of the second photoelectric conversion unit 1500-2 and the charge accumulation unit 41 formed in the semiconductor substrate 30, the solid-state imaging device 1500 has a connection hole 1214-15-1 that penetrates the insulating layer 10, the first photoelectric conversion unit 1500-1, and the semiconductor substrate 30. A conductive portion (through electrode) 12 and a conductive portion (through electrode) 14 are formed in the connection hole 1214-15-1, and the conductive portion (through electrode) 12 connected to the first electrode 7 and the conductive portion (through electrode) 14 connected to the charge accumulation unit 41 are connected through a via 13 formed in the insulating layer 11. Furthermore, in order to electrically connect the first electrode 8 of the first photoelectric conversion unit 1500-1 and the charge accumulation unit 43 formed in the semiconductor substrate 30, the solid-state imaging device 1500 has a connection hole 150-15 that penetrates the insulating layer 11 and the semiconductor substrate 30. That is, the first electrode 8 is connected to the charge accumulation unit 43 via a conductive portion (through electrode) 15 formed in the connection hole 150-10.

Within the connection hole 1214-15-2, an insulating film 515a having fixed charges of the same type as the charges accumulated in the charge accumulation section 45 is formed between the conductive section 12-15 (through electrode) and the insulating layer 10-3, the second photoelectric conversion section 1500-2 below the insulating layer 10-3, the second electrode 2-2 below the second photoelectric conversion section 1500-2, the photoelectric conversion film 5 below the second electrode 2-2, the transfer layer 6 below the photoelectric conversion film 5, and the insulating layer 11 below the transfer layer 6, so as to cover the outer periphery of the conductive section 12-15 (through electrode). In detail, with the connection hole 1214-15-2 in FIG. 15 being the center reference in the left-right direction in the figure, on the left side, there is an insulating layer 10-3, a second photoelectric conversion unit 1500-2 below the insulating layer 10-3, a second electrode 2-2 below the second photoelectric conversion unit 1500-2, a photoelectric conversion film 5 below the second electrode 2-2, a transfer layer 6 below the photoelectric conversion film 5, an insulating layer 11 below the transfer layer 6, an insulating film 515a-1 (515a), On the right side, an insulating layer 10-3, a second photoelectric conversion section 1500-2 below the insulating layer 10-3, a second electrode 2-2 below the second photoelectric conversion section 1500-2, a photoelectric conversion film 5 below the second electrode 2-2, a transfer layer 6 below the photoelectric conversion film 5, an insulating layer 11 below the transfer layer 6, an insulating film 515a-2 (515a), and a conductive section 12-15 are formed in this order. When viewed in the vertical direction in FIG. 15, the insulating film 515a is formed extending from the first electrode 78 formed in the insulating layer 10-3 included in the third photoelectric conversion section 1500-3 to the via 13 formed in the insulating layer 11 included in the first photoelectric conversion section 1500-1.

Within the connection hole 1214-15-1, an insulating film 515b having a fixed charge of the same type as the charge accumulated in the charge accumulation section 41 is formed between the conductive section 12 (through electrode) and the insulating layer 10, the second electrode 2-2 below the insulating layer 10, the photoelectric conversion film 5 below the second electrode 2-2, the transfer layer 6 below the photoelectric conversion film 5, and the insulating layer 11 below the transfer layer 6, so as to cover the outer periphery of the conductive section 12 (through electrode). In detail, with the connection hole 1214-15-1 in Figure 15 being used as the center reference in the left-right direction in the figure, on the left side, an insulating layer 10, a second electrode 2-2 below the insulating layer 10, a photoelectric conversion film 5 below the second electrode 2-2, a transfer layer 6 below the photoelectric conversion film 5, an insulating layer 11 below the transfer layer 6, an insulating film 515b-1 (515b), and a conductive portion 12 are formed in this order, and on the right side, an insulating layer 10, a second electrode 2-2 below the insulating layer 10, a photoelectric conversion film 5 below the second electrode 2-2, a transfer layer 6 below the photoelectric conversion film 5, and an insulating layer 11 below the transfer layer 6, an insulating film 515b-2 (515b), and a conductive portion 12 are formed in this order. When viewed in the vertical direction in Figure 15, the insulating film 515b is formed to extend from the first electrode 7 formed in the insulating layer 10 included in the second photoelectric conversion section 1500-2 to the via 13 formed in the insulating layer 11 included in the first photoelectric conversion section 1500-1.

The insulating film 515a is an insulating film having a negative fixed charge when the signal charge to be read out is an electron, and is an insulating film having a positive fixed charge when the signal charge to be read out is a hole. By including the insulating film 515a in the solid-state imaging device 1500, the signal charge photoelectrically converted by the photoelectric conversion film 3 is stored in the transfer layer 4 above the storage electrode 1-1 without being captured by the conductive portion 12-15 (through electrode), and further, the signal charge photoelectrically converted by the photoelectric conversion film 5 is stored in the transfer layer 6 above the storage electrode 1-2 without being captured by the conductive portion 12-15 (through electrode).

In the case where the insulating film 515a is an insulating film having a negative fixed charge, the insulating film 515a may contain at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, porphyrium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, the insulating film 515a may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

When the insulating film 515a is an insulating film having a positive fixed charge, the insulating film 515a may contain, for example, at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, the insulating film 515a may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

The insulating film 515b is an insulating film having a negative fixed charge when the signal charge to be read out is an electron, and is an insulating film having a positive fixed charge when the signal charge to be read out is a hole. By including the insulating film 515b in the solid-state imaging device 1500, the signal charge photoelectrically converted by the photoelectric conversion film 5 is stored in the transfer layer 6 above the storage electrode 1-2 without being captured by the conductive portion 12 (through electrode).

When the insulating film 515b is an insulating film having a negative fixed charge, the insulating film 515b may include at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, porphyrium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, the insulating film 515b may include an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

When the insulating film 515b is an insulating film having a positive fixed charge, the insulating film 515b may contain, for example, at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, the insulating film 515b may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

The above description of the solid-state imaging device of the fifth embodiment (example 5 of solid-state imaging device) of the present technology can be applied to the solid-state imaging devices of the first to fourth embodiments of the present technology described above and the solid-state imaging device of the sixth embodiment of the present technology described below, unless there is any particular technical contradiction.

7. Sixth embodiment (sixth example of solid-state imaging device)
A solid-state imaging device according to a sixth embodiment of the present technology (sixth example of a solid-state imaging device) will be described with reference to FIGS. 16 to 17 and 19. FIG.

First, an explanation will be given with reference to Fig. 16. Fig. 16 is a cross-sectional view showing an example of the configuration of a solid-state imaging device (solid-state imaging device 1600) according to a sixth embodiment of the present technology.

The solid-state imaging device 1600 comprises a semiconductor substrate 30, a first photoelectric conversion unit 1600-1 that is provided above the semiconductor substrate 30 (the light incident side, or the upper side in FIG. 16) and converts light into electric charges, and a second photoelectric conversion unit 1600-2 that is provided above the first photoelectric conversion unit 1600-1 (the light incident side, or the upper side in FIG. 16) and converts light into electric charges.

The first photoelectric conversion unit 1600-1 includes a first electrode 8 (a readout electrode, which is the lower electrode in FIG. 16), a second electrode 2-2 (which is the upper electrode in FIG. 16), and a photoelectric conversion film 5 arranged between the first electrode (readout electrode) 8 and the second electrode 2-2.

The second photoelectric conversion section 1600-2 includes a first electrode 7 (a readout electrode, which is the lower electrode in Figure 16), a second electrode 2-1 (the upper electrode in Figure 16), and a photoelectric conversion film 3 arranged between the first electrode (readout electrode) 7 and the second electrode 2-1.

The first electrode 7 of the second photoelectric conversion unit 1600-2 and the charge accumulation unit 41 formed on the semiconductor substrate 30 are electrically connected through the conductive portion 12 penetrating the first photoelectric conversion unit 1600-1. That is, in order to electrically connect the first electrode 7 of the second photoelectric conversion unit 1600-2 and the charge accumulation unit 41 formed on the semiconductor substrate 30, the solid-state imaging device 1600 has a connection hole 1214-16 penetrating the insulating layer 10, the first photoelectric conversion unit 1600-1, and the semiconductor substrate 30. A conductive portion (through electrode) 12 and a conductive portion (through electrode) 14 are formed in the connection hole 1214-16, and the conductive portion (through electrode) 12 connected to the first electrode 7 and the conductive portion (through electrode) 14 connected to the charge accumulation unit 41 are connected through a via 13 formed in the insulating layer 11. The photodiode (PD) 9 formed on the semiconductor substrate 30 is connected to the charge accumulation unit 42. Further, in order to electrically connect the first electrode 8 of the first photoelectric conversion unit 1600-1 and the charge accumulation unit 43 formed in the semiconductor substrate 30, a connection hole 150-16 is formed penetrating the insulating layer 11 and the semiconductor substrate 30. That is, the first electrode 8 is connected to the charge accumulation unit 43 via a conductive portion (penetrating electrode) 15 formed in the connection hole 150-16.

In the connection hole 1214-16, an insulating film 516 having the same type of fixed charge as the charge stored in the charge storage section 41 is formed between the conductive section 12 (through electrode) and the photoelectric conversion film 5 so as to cover the outer periphery of the conductive section 12 (through electrode). In detail, with the connection hole 1214-16 in FIG. 16 as the center reference in the left-right direction in the figure, the photoelectric conversion film 5, the insulating film 516-1 (516), and the conductive section 12 are formed in this order on the left side, and the photoelectric conversion film 5, the insulating film 516-2 (516), and the conductive section 12 are formed in this order on the right side. When viewed in the vertical direction in FIG. 16, the insulating film 516 is formed extending from the upper part of the photoelectric conversion film 5 (upper side in FIG. 16) to the lower part of the photoelectric conversion film 5 (lower side in FIG. 16), that is, over the entire side surface of the photoelectric conversion section 5.

In the solid-state imaging device 1600 of FIG. 16, charges are not stored in the first electrode (signal readout electrode) and the photoelectric conversion film, but are stored in the charge storage section (FD) formed in the semiconductor substrate 30. In the solid-state imaging device 1600, too, it is effective to introduce a fixed charge into the insulating film covering the through electrode in order to prevent the conductive section (through electrode) required when reading out the signal of the second photoelectric conversion section (upper layer) from modulating the potential of the photoelectric conversion film of the first photoelectric conversion section (lower layer) and deteriorating the characteristics. Note that since signal charges are stored in the charge storage section (FD), pixel sharing is often difficult.

The insulating film 516 is an insulating film having a negative fixed charge when the signal charge to be read out is an electron, and is an insulating film having a positive fixed charge when the signal charge to be read out is a hole. By including the insulating film 516 in the solid-state imaging device 1600, the signal charge photoelectrically converted by the photoelectric conversion film 5 is not captured by the conductive portion 12 (through electrode).

When the insulating film 516 is an insulating film having a negative fixed charge, the insulating film 516 may include at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, porphyrium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, the insulating film 516 may include an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

When the insulating film 516 is an insulating film having a positive fixed charge, the insulating film 516 may contain, for example, at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, the insulating film 516 may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

Next, an explanation will be given with reference to Fig. 17. Fig. 17 is a cross-sectional view showing an example configuration of a solid-state imaging device (solid-state imaging device 1700) according to a sixth embodiment of the present technology.

The solid-state imaging device 1700 comprises a semiconductor substrate 30, a first photoelectric conversion unit 1700-1 that is provided above the semiconductor substrate 30 (the light incident side, or the upper side in FIG. 17) and converts light into electric charges, and a second photoelectric conversion unit 1700-2 that is provided above the first photoelectric conversion unit 1700-1 (the light incident side, or the upper side in FIG. 17) and converts light into electric charges.

The first photoelectric conversion unit 1700-1 includes a first electrode 8 (a readout electrode, which is the lower electrode in Figure 17), a second electrode 2-2 (which is the upper electrode in Figure 17), and a photoelectric conversion film 5 arranged between the first electrode (readout electrode) 8 and the second electrode 2-2.

The second photoelectric conversion section 1700-2 includes a first electrode 7 (a readout electrode, which is the lower electrode in Figure 17), a second electrode 2-1 (the upper electrode in Figure 17), and a photoelectric conversion film 3 arranged between the first electrode (readout electrode) 7 and the second electrode 2-1.

The first electrode 7 of the second photoelectric conversion unit 1700-2 and the charge accumulation unit 41 formed on the semiconductor substrate 30 are electrically connected through the conductive portion 12 penetrating the first photoelectric conversion unit 1700-1. That is, in order to electrically connect the first electrode 7 of the second photoelectric conversion unit 1700-2 and the charge accumulation unit 41 formed on the semiconductor substrate 30, the solid-state imaging device 1700 has a connection hole 1214-17 penetrating the insulating layer 10, the first photoelectric conversion unit 1700-1, and the semiconductor substrate 30. A conductive portion (through electrode) 12 and a conductive portion (through electrode) 14 are formed in the connection hole 1214-17, and the conductive portion (through electrode) 12 connected to the first electrode 7 and the conductive portion (through electrode) 14 connected to the charge accumulation unit 41 are connected through a via 13 formed in the insulating layer 11. The photodiode (PD) 9 formed on the semiconductor substrate 30 is connected to the charge accumulation unit 42. Further, in order to electrically connect the first electrode 8 of the first photoelectric conversion unit 1700-1 and the charge accumulation unit 43 formed in the semiconductor substrate 30, a connection hole 150-17 is formed penetrating the insulating layer 11 and the semiconductor substrate 30. That is, the first electrode 8 is connected to the charge accumulation unit 43 via a conductive portion (through electrode) 15 formed in the connection hole 150-17.

Within the connection hole 1214-17, an insulating film 517 having a fixed charge of the same type as the charge accumulated in the charge accumulation section 41 is formed between the conductive section 12 (through electrode) and the insulating layer 10, the second electrode 2-2 below the insulating layer 10, the photoelectric conversion film 5 below the second electrode 2-2, and the insulating layer 11 below the photoelectric conversion film 5, so as to cover the outer periphery of the conductive section 12 (through electrode). 17 as a center reference in the horizontal direction in the figure, the insulating layer 10, the second electrode 2-2 below the insulating layer 10, the photoelectric conversion film 5 below the second electrode 2-2, the insulating layer 11 below the photoelectric conversion film 5, the insulating film 517-1 (517), and the conductive portion 12 are formed in this order on the left side, and the insulating layer 10, the second electrode 2-2 below the insulating layer 10, the photoelectric conversion film 5 below the second electrode 2-2, the insulating layer 11 below the photoelectric conversion film 5, the insulating film 517-2 (517), and the conductive portion 12 are formed in this order on the right side. When viewed in the vertical direction in FIG. 17, the insulating film 517 is formed extending from the first electrode 7 formed in the insulating layer 10 to the via 13 formed in the insulating layer 11.

The insulating film 517 is an insulating film having a negative fixed charge when the signal charge to be read out is an electron, and is an insulating film having a positive fixed charge when the signal charge to be read out is a hole. By including the insulating film 517 in the solid-state imaging device 200, the signal charge photoelectrically converted by the photoelectric conversion film 5 is not captured by the conductive portion 12 (through electrode).

When the insulating film 517 is an insulating film having a negative fixed charge, the insulating film 517 may include at least one material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, porphyrium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, aluminum nitride film, hafnium oxynitride film, and aluminum oxynitride film. Furthermore, the insulating film 517 may include an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

When the insulating film 517 is an insulating film having a positive fixed charge, the insulating film 517 may contain, for example, at least one material selected from the group consisting of silicon oxynitride and silicon nitride (SiN). Furthermore, the insulating film 517 may contain an insulating material such as a silicon oxide film in addition to the above-mentioned materials, or an insulating material such as a silicon oxide film may be added as a film (layer) separate from the film (layer) composed of the above-mentioned materials.

Finally, an explanation will be given using FIG. 19. FIG. 19 is a diagram showing an example of the results of a comparison between an insulating film having a fixed charge and an insulating film having no fixed charge. More specifically, FIG. 19(a) in FIG. 19 shows an insulating film 5019 having no fixed charge (the left side in FIG. 19(a) shows insulating film 5019-1, and the right side in FIG. 18(b) shows insulating film 5019-2) formed so as to cover the outer periphery of the conductive portion 12. FIG. 19(b) in FIG. 19 shows an insulating film 519 having a fixed charge (negative fixed charge m in FIG. 19(b)) formed so as to cover the outer periphery of the conductive portion 12 (the left side in FIG. 19(b) shows insulating film 519-1, and the right side in FIG. 19(b) shows insulating film 519-2).

As shown in Figure 19(a), the signal charge (electrons in Figure 19(a)) generated by photoelectric conversion in the photoelectric conversion film 5 is captured by the conductive portion 12 (through electrode) as shown by arrow S19a, reducing the aperture ratio of the photoelectric conversion film 5 and worsening the afterimage and random noise.

As shown in Figure 19(b), the signal charge (electrons in Figure 19(b)) generated by photoelectric conversion in the photoelectric conversion film 5 is not captured by the conductive portion 12 (through electrode) as shown by arrow S19b, so the aperture ratio of the photoelectric conversion film 5 does not decrease, afterimages and random noise do not worsen, and dark current is improved. Furthermore, since a shielding electrode as described in Figure 5 is not required, the amount of electrons in the photodiode (PD), for example, can be increased depending on the amount not required.

The above description of the solid-state imaging device of the sixth embodiment (example 6 of solid-state imaging device) of the present technology can be applied to the solid-state imaging devices of the first to fifth embodiments of the present technology described above, unless there is any particular technical contradiction.

8. Seventh embodiment (example of electronic device)
An electronic device according to a seventh embodiment of the present technology is an electronic device equipped with a solid-state imaging device according to any one of the first to sixth embodiments of the present technology.

9. Examples of Use of Solid-State Imaging Device to which the Present Technology is Applied
FIG. 21 is a diagram showing an example of using the solid-state imaging devices according to the first to sixth embodiments of the present technology as an image sensor (solid-state imaging device).

The solid-state imaging devices of the first to sixth embodiments described above can be used in various cases for sensing light such as visible light, infrared light, ultraviolet light, and X-rays, for example, as described below. That is, as shown in FIG. 21, the solid-state imaging device of any one of the first to sixth embodiments can be used in a device (for example, the electronic device of the seventh embodiment described above) used in the fields of appreciation for capturing images for appreciation, transportation, home appliances, medicine and health care, security, beauty, sports, agriculture, and the like.

Specifically, in the field of appreciation, a solid-state imaging device according to any one of the first to sixth embodiments can be used in devices for capturing images for appreciation, such as digital cameras, smartphones, and mobile phones with camera functions.

In the field of transportation, for example, a solid-state imaging device according to any one of the first to sixth embodiments can be used in devices used for transportation purposes, such as on-board sensors that capture images of the front, rear, surroundings, and interior of a vehicle for safe driving such as automatic stopping and for recognition of the driver's condition, surveillance cameras that monitor moving vehicles and roads, and distance measuring sensors that measure distances between vehicles, etc.

In the field of home appliances, for example, a solid-state imaging device according to any one of the first to sixth embodiments can be used in devices provided in home appliances such as television sets, refrigerators, and air conditioners to capture images of user gestures and operate the appliance in accordance with those gestures.

In the medical and healthcare fields, the solid-state imaging device of any one of the first to sixth embodiments can be used in devices used for medical or healthcare purposes, such as endoscopes and devices that perform vascular imaging by receiving infrared light.

In the field of security, for example, a solid-state imaging device of any one of the first to sixth embodiments can be used in devices used for security purposes, such as surveillance cameras for crime prevention purposes and cameras for person authentication purposes.

In the field of beauty, for example, a solid-state imaging device according to any one of the first to sixth embodiments can be used in devices used for beauty purposes, such as a skin measuring device that photographs the skin or a microscope that photographs the scalp.

In the field of sports, for example, a solid-state imaging device of any one of the first to sixth embodiments can be used in a device for sports use, such as an action camera or a wearable camera for sports applications.

In the agricultural field, for example, a solid-state imaging device according to any one of the first to sixth embodiments can be used in equipment used for agricultural purposes, such as a camera for monitoring the condition of fields and crops.

Next, a specific example of the use of the solid-state imaging device according to the first to sixth embodiments of the present technology will be described. For example, the solid-state imaging device according to any one of the first to sixth embodiments described above is used. Specifically, the solid-state imaging device 101 can be applied to any type of electronic device equipped with an imaging function, such as a camera system such as a digital still camera or video camera, or a mobile phone with an imaging function. FIG. 22 shows a schematic configuration of an electronic device 102 (camera) as an example. The electronic device 102 is, for example, a video camera capable of taking still or moving images, and includes the solid-state imaging device 101, an optical system (optical lens) 310, a shutter device 311, a drive unit 313 for driving the solid-state imaging device 101 and the shutter device 311, and a signal processing unit 312.

The optical system 310 guides image light (incident light) from a subject to the pixel section 101a of the solid-state imaging device 101. This optical system 310 may be composed of multiple optical lenses. The shutter device 311 controls the light irradiation period and light blocking period to the solid-state imaging device 101. The drive section 313 controls the transfer operation of the solid-state imaging device 101 and the shutter operation of the shutter device 311. The signal processing section 312 performs various signal processing on the signal output from the solid-state imaging device 101. The video signal Dout after signal processing is stored in a storage medium such as a memory, or is output to a monitor, etc.

<10. Application example to endoscopic surgery system>
The present technology can be applied to various products. For example, the technology according to the present disclosure (the present technology) may be applied to an endoscopic surgery system.

Figure 23 is a diagram showing an example of the general configuration of an endoscopic surgery system to which the technology disclosed herein (the present technology) can be applied.

23 shows an operator (doctor) 11131 performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgery system 11000. As shown in the figure, the endoscopic surgery system 11000 is composed of an endoscope 11100, other surgical tools 11110 such as an insufflation tube 11111 and an energy treatment tool 11112, a support arm device 11120 that supports the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are mounted.

The endoscope 11100 is composed of a lens barrel 11101, the tip of which is inserted into the body cavity of the patient 11132 at a predetermined length, and a camera head 11102 connected to the base end of the lens barrel 11101. In the illustrated example, the endoscope 11100 is configured as a so-called rigid lens barrel having a rigid lens barrel 11101, but the endoscope 11100 may be configured as a so-called flexible lens barrel having a flexible lens barrel.

An opening into which an objective lens is fitted is provided at the tip of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is irradiated via the objective lens toward an object to be observed in the body cavity of the patient 11132. The endoscope 11100 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

An optical system and an image sensor are provided inside the camera head 11102, and the reflected light (observation light) from the observation object is focused on the image sensor by the optical system. The observation light is photoelectrically converted by the image sensor to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observation image. The image signal is sent to the camera control unit (CCU: Camera Control Unit) 11201 as RAW data.

The CCU 11201 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and controls the overall operation of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102, and performs various image processing on the image signal, such as development processing (demosaic processing), to display an image based on the image signal.

The display device 11202, under the control of the CCU 11201, displays an image based on an image signal that has been subjected to image processing by the CCU 11201.

The light source device 11203 is composed of a light source such as an LED (Light Emitting Diode) and supplies illumination light to the endoscope 11100 when photographing the surgical site, etc.

The input device 11204 is an input interface for the endoscopic surgery system 11000. A user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) of the endoscope 11100.

The treatment tool control device 11205 controls the operation of the energy treatment tool 11112 for cauterizing tissue, incising, sealing blood vessels, etc. The insufflation device 11206 sends gas into the body cavity of the patient 11132 via the insufflation tube 11111 to inflate the body cavity in order to ensure a clear field of view for the endoscope 11100 and to ensure a working space for the surgeon. The recorder 11207 is a device capable of recording various types of information related to surgery. The printer 11208 is a device capable of printing various types of information related to surgery in various formats such as text, images, or graphs.

The light source device 11203 that supplies irradiation light to the endoscope 11100 when photographing the surgical site can be composed of a white light source composed of, for example, an LED, a laser light source, or a combination of these. When the white light source is composed of a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, so that the white balance of the captured image can be adjusted in the light source device 11203. In this case, it is also possible to capture images corresponding to each of the RGB colors in a time-division manner by irradiating the observation object with laser light from each of the RGB laser light sources in a time-division manner and controlling the drive of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter to the image sensor.

The light source device 11203 may be controlled to change the intensity of the light it outputs at predetermined time intervals. The driving of the image sensor of the camera head 11102 may be controlled in synchronization with the timing of the change in the light intensity to acquire images in a time-division manner, and the images may be synthesized to generate an image with a high dynamic range that is free of so-called blackout and whiteout.

The light source device 11203 may also be configured to supply light of a predetermined wavelength band corresponding to special light observation. In special light observation, for example, by utilizing the wavelength dependency of light absorption in body tissue, a narrow band of light is irradiated compared to the irradiation light (i.e., white light) during normal observation, a predetermined tissue such as blood vessels on the mucosal surface is photographed with high contrast, so-called narrow band imaging. Alternatively, in special light observation, fluorescence observation may be performed in which an image is obtained by fluorescence generated by irradiating excitation light. In fluorescence observation, excitation light is irradiated to body tissue and fluorescence from the body tissue is observed (autofluorescence observation), or a reagent such as indocyanine green (ICG) is locally injected into the body tissue and excitation light corresponding to the fluorescence wavelength of the reagent is irradiated to the body tissue to obtain a fluorescent image. The light source device 11203 may be configured to supply narrow band light and/or excitation light corresponding to such special light observation.

Figure 24 is a block diagram showing an example of the functional configuration of the camera head 11102 and CCU 11201 shown in Figure 23.

The camera head 11102 has a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other by a transmission cable 11400 so that they can communicate with each other.

The lens unit 11401 is an optical system provided at the connection with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is composed of a combination of multiple lenses including a zoom lens and a focus lens.

The imaging unit 11402 is composed of an imaging element. The imaging element constituting the imaging unit 11402 may be one (so-called single-plate type) or multiple (so-called multi-plate type). When the imaging unit 11402 is composed of a multi-plate type, for example, each imaging element may generate an image signal corresponding to each of RGB, and a color image may be obtained by combining them. Alternatively, the imaging unit 11402 may be configured to have a pair of imaging elements for acquiring image signals for the right eye and the left eye corresponding to 3D (Dimensional) display. By performing 3D display, the surgeon 11131 can more accurately grasp the depth of the biological tissue in the surgical site. In addition, when the imaging unit 11402 is composed of a multi-plate type, multiple lens units 11401 may be provided corresponding to each imaging element.

Furthermore, the imaging unit 11402 does not necessarily have to be provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the telescope tube 11101, immediately after the objective lens.

The driving unit 11403 is composed of an actuator, and moves the zoom lens and focus lens of the lens unit 11401 a predetermined distance along the optical axis under the control of the camera head control unit 11405. This allows the magnification and focus of the image captured by the imaging unit 11402 to be appropriately adjusted.

The communication unit 11404 is configured by a communication device for transmitting and receiving various information between the communication unit 11404 and the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.

In addition, the communication unit 11404 receives a control signal for controlling the driving of the camera head 11102 from the CCU 11201, and supplies it to the camera head control unit 11405. The control signal includes information on the imaging conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value at the time of capturing the image, and/or information specifying the magnification and focus of the captured image.

The above-mentioned frame rate, exposure value, magnification, focus, and other imaging conditions may be appropriately specified by the user, or may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, the endoscope 11100 is equipped with a so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.

The camera head control unit 11405 controls the operation of the camera head 11102 based on a control signal from the CCU 11201 received via the communication unit 11404.

The communication unit 11411 is configured by a communication device for transmitting and receiving various information between the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.

In addition, the communication unit 11411 transmits a control signal to the camera head 11102 for controlling the driving of the camera head 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication, etc.

The image processing unit 11412 performs various image processing on the image signal, which is RAW data transmitted from the camera head 11102.

The control unit 11413 performs various controls related to the imaging of the surgical site, etc. by the endoscope 11100, and the display of the captured images obtained by imaging the surgical site, etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102.

The control unit 11413 also displays the captured image showing the surgical site on the display device 11202 based on the image signal that has been image-processed by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition techniques. For example, the control unit 11413 can recognize surgical tools such as forceps, specific biological parts, bleeding, mist generated when using the energy treatment tool 11112, and the like, by detecting the shape and color of the edges of objects included in the captured image. When the control unit 11413 displays the captured image on the display device 11202, it may use the recognition result to superimpose various types of surgical support information on the image of the surgical site. By superimposing the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can proceed with the surgery reliably.

The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable corresponding to communication of electrical signals, an optical fiber corresponding to optical communication, or a composite cable of these.

In the illustrated example, communication is performed wired using a transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may also be performed wirelessly.

The above describes an example of an endoscopic surgery system to which the technology disclosed herein can be applied. The technology disclosed herein can be applied to the endoscope 11100, the camera head 11102 (imaging unit 11402), and the like, among the configurations described above. Specifically, the solid-state imaging device related to the present technology can be applied to the imaging unit 10402. By applying the technology disclosed herein to the endoscope 11100, the camera head 11102 (imaging unit 11402), and the like, it is possible to improve the performance of the endoscope 11100, the camera head 11102 (imaging unit 11402), and the like.

Here, an endoscopic surgery system has been described as an example, but the technology disclosed herein may also be applied to other systems, such as microsurgery systems.

<11. Examples of applications to moving objects>
The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility device, an airplane, a drone, a ship, or a robot.

Figure 25 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology disclosed herein can be applied.

The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 25, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside vehicle information detection unit 12030, an inside vehicle information detection unit 12040, and an integrated control unit 12050. In addition, as functional configurations of the integrated control unit 12050, a microcomputer 12051, an audio/video output unit 12052, and an in-vehicle network I/F (interface) 12053 are shown.

The drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various programs. For example, the drive system control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

The body system control unit 12020 controls the operation of various devices installed in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, tail lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves or signals from various switches transmitted from a portable device that replaces a key can be input to the body system control unit 12020. The body system control unit 12020 accepts the input of these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, the image capturing unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the image capturing unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, or characters on the road surface based on the received images.

The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

The microcomputer 12051 can calculate the control target values of the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040, and output a control command to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the distance between vehicles, maintaining vehicle speed, vehicle collision warning, or vehicle lane departure warning.

In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on the driver's operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle acquired by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

In addition, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside-vehicle information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside-vehicle information detection unit 12030, and perform cooperative control for the purpose of preventing glare, such as switching from high beams to low beams.

The audio/image output unit 12052 transmits at least one output signal of audio and image to an output device capable of visually or audibly notifying the occupants of the vehicle or the outside of the vehicle of information. In the example of Fig. 25, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as output devices. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

Figure 26 is a diagram showing an example of the installation position of the imaging unit 12031.

In FIG. 26, vehicle 12100 has imaging units 12101, 12102, 12103, 12104, and 12105 as imaging unit 12031.

The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at the front nose, side mirrors, rear bumper, back door, and the upper part of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided at the front nose and the imaging unit 12105 provided at the upper part of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided at the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided at the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The images of the front acquired by the imaging units 12101 and 12105 are mainly used to detect leading vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

26 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, an overhead image of the vehicle 12100 viewed from above is obtained by superimposing the image data captured by the imaging units 12101 to 12104.

At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera consisting of multiple imaging elements, or may be an imaging element having pixels for phase difference detection.

For example, the microcomputer 12051 can extract, as a preceding vehicle, the three-dimensional object that is the closest to the vehicle 12100 on the path of travel and travels in approximately the same direction as the vehicle 12100 at a predetermined speed (for example, 0 km/h or more) by calculating the distance to each three-dimensional object within the imaging range 12111 to 12114 and the change in this distance over time (relative speed to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104. Furthermore, the microcomputer 12051 can set the vehicle distance to be secured in advance in front of the preceding vehicle and perform automatic brake control (including follow-up stop control) and automatic acceleration control (including follow-up start control). In this way, cooperative control can be performed for the purpose of autonomous driving, which runs autonomously without relying on the driver's operation.

For example, the microcomputer 12051 classifies and extracts three-dimensional object data on three-dimensional objects, such as two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects, based on the distance information obtained from the imaging units 12101 to 12104, and can use the data to automatically avoid obstacles. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 determines the collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or exceeds a set value and there is a possibility of a collision, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured images of the imaging units 12101 to 12104. The recognition of such a pedestrian is performed, for example, by a procedure of extracting feature points in the captured images of the imaging units 12101 to 12104 as infrared cameras and a procedure of performing pattern matching processing on a series of feature points that indicate the contour of an object to determine whether or not the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the captured images of the imaging units 12101 to 12104 and recognizes the pedestrian, the audio/image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian. The audio/image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating a pedestrian at a desired position.

The above describes an example of a vehicle control system to which the technology related to the present disclosure (the present technology) can be applied. The technology related to the present disclosure can be applied to, for example, the imaging unit 12031, among the configurations described above. Specifically, the solid-state imaging device related to the present technology can be applied to the imaging unit 12031. By applying the technology related to the present disclosure to the imaging unit 12031, it is possible to improve the performance of the imaging unit 12031.

Note that this technology is not limited to the above-mentioned embodiments, use examples, and application examples, and various modifications are possible without departing from the gist of this technology.

Furthermore, the effects described in this specification are merely examples and are not limiting, and other effects may also exist.

The present technology can also be configured as follows.
[1]
A semiconductor substrate;
a first photoelectric conversion unit provided above the semiconductor substrate and configured to convert light into electric charges;
a second photoelectric conversion unit provided above the first photoelectric conversion unit and configured to convert light into electric charges;
each of the first photoelectric conversion unit and the second photoelectric conversion unit includes at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode;
electrically connecting the first electrode of the second photoelectric conversion unit and a charge accumulation unit formed on the semiconductor substrate via a conductive portion that penetrates at least the first photoelectric conversion unit;
an insulating film portion is disposed on at least a part of the outer periphery of the conductive portion;
the insulating film portion is composed of at least one insulating film layer,
the at least one insulating film has fixed charges of the same type as the charges stored in the charge storage section.
[2]
The solid-state imaging device according to [1], wherein the at least one insulating film is disposed between the conductive portion and the first photoelectric conversion portion so as to cover an outer periphery of the conductive portion.
[3]
The solid-state imaging device described in [1], wherein the conductive portion penetrates the first photoelectric conversion portion and reaches into the semiconductor substrate, and the at least one layer of insulating film is arranged between the conductive portion, the first photoelectric conversion portion, and the semiconductor substrate so as to cover an outer periphery of the conductive portion.
[4]
A solid-state imaging device described in any one of [1] to [3], wherein each of the first photoelectric conversion unit and the second photoelectric conversion unit includes a charge storage electrode arranged at a distance from the first electrode and facing the photoelectric conversion film via an insulating layer.
[5]
the second photoelectric conversion unit has a plurality of pixels,
One pixel has one of the charge storage electrodes,
The solid-state imaging device according to [4], wherein the charge storage section is shared by the plurality of pixels.
[6]
electrically connecting the first electrode of the first photoelectric conversion unit and the first electrode of the second photoelectric conversion unit to the charge accumulation unit formed on the semiconductor substrate via a conductive portion that penetrates at least the first photoelectric conversion unit;
the insulating film portion is disposed on at least a part of the outer periphery of the conductive portion,
the insulating film portion is composed of the at least one insulating film,
the at least one insulating film has fixed charges of the same type as the charges stored in the charge storage section,
the first photoelectric conversion unit has a plurality of first pixels,
the second photoelectric conversion unit has a plurality of second pixels,
One of the first pixels has one of the charge storage electrodes,
One of the second pixels has one of the charge storage electrodes,
The solid-state imaging device according to [4] or [5], wherein the charge storage section is shared by at least one of the first pixels and at least one of the second pixels.
[7]
A solid-state imaging device according to any one of [1] to [6], wherein the insulating film section is composed of an insulating film having a fixed charge of the same type as the charge stored in the charge storage section, and an insulating film having a high dielectric constant material.
[8]
an insulating film having the high dielectric constant material is disposed so as to cover an outer periphery of the conductive portion,
the insulating film having a fixed charge is disposed so as to cover an outer periphery of the insulating film having a high dielectric constant material,
an insulating film having the high dielectric constant material is disposed between the conductive portion and the insulating film having the fixed charge,
The solid-state imaging device according to [7], wherein the insulating film having the fixed charge is disposed between the insulating film having the high dielectric constant material and the first photoelectric conversion section.
[9]
the insulating film having a fixed charge is disposed so as to cover an outer periphery of the conductive portion,
the insulating film having a high dielectric constant is disposed so as to cover an outer periphery of the insulating film having a fixed charge,
the insulating film having a fixed charge is disposed between the conductive portion and the insulating film having a high dielectric constant,
The solid-state imaging device according to [7], wherein the insulating film having a high dielectric constant is disposed between the insulating film having a fixed charge and the first photoelectric conversion unit.
[10]
A solid-state imaging device described in any one of [1] to [9], wherein each of the first photoelectric conversion unit and the second photoelectric conversion unit further includes a transfer layer arranged between the first electrode and the photoelectric conversion film.
[11]
The solid-state imaging device described in [10], wherein the at least one insulating film is arranged between the conductive portion and the first photoelectric conversion portion and the transfer layer included in the first photoelectric conversion portion so as to cover the outer periphery of the conductive portion.
[12]
the conductive portion penetrates the first photoelectric conversion portion and reaches the inside of the semiconductor substrate,
The solid-state imaging device described in [10], wherein the at least one insulating film is arranged between the conductive portion, the first photoelectric conversion portion, the transfer layer included in the first photoelectric conversion portion, and the semiconductor substrate so as to cover the outer periphery of the conductive portion.
[13]
A semiconductor substrate;
a first photoelectric conversion unit provided above the semiconductor substrate and configured to convert light into electric charges;
a second photoelectric conversion unit provided above the first photoelectric conversion unit and configured to convert light into electric charges;
a third photoelectric conversion unit provided above the second photoelectric conversion unit and configured to convert light into electric charges;
each of the first photoelectric conversion unit, the second photoelectric conversion unit, and the third photoelectric conversion unit includes at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode;
electrically connecting the first electrode of the second photoelectric conversion unit and a first charge accumulation unit formed on the semiconductor substrate via a first conductive unit that at least penetrates the first photoelectric conversion unit;
a first insulating film portion is disposed on at least a part of an outer periphery of the first conductive portion;
the first insulating film portion is composed of at least one first insulating film layer,
the at least one first insulating film has fixed charges of the same type as the charges stored in the first charge storage portion;
electrically connecting the first electrode of the third photoelectric conversion unit and a second charge accumulation unit formed on the semiconductor substrate via a second conductive unit that penetrates at least the second photoelectric conversion unit and the first photoelectric conversion unit;
a second insulating film portion is disposed on at least a part of an outer periphery of the second conductive portion;
the second insulating film portion is composed of at least one layer of a second insulating film,
the at least one second insulating film has a fixed charge of the same type as the charge accumulated in the second charge accumulation portion.
[14]
the at least one first insulating film is disposed between the first conductive portion and the first photoelectric conversion portion so as to cover an outer periphery of the first conductive portion;
A solid-state imaging device as described in [13], wherein the at least one layer of second insulating film is arranged between the second conductive portion and the second photoelectric conversion portion so as to cover an outer periphery of the second conductive portion, and is also arranged between the second conductive portion and the first photoelectric conversion portion.
[15]
A solid-state imaging device as described in [13] or [14], wherein each of the first photoelectric conversion unit, the second photoelectric conversion unit, and the third photoelectric conversion unit includes a charge storage electrode arranged at a distance from the first electrode and facing the photoelectric conversion film via an insulating layer.
[16]
A solid-state imaging device described in any one of [13] to [15], wherein each of the first photoelectric conversion unit, the second photoelectric conversion unit, and the third photoelectric conversion unit further includes a transfer layer arranged between the first electrode and the photoelectric conversion film.
[17]
the at least one first insulating film is disposed between the first conductive portion, and the first photoelectric conversion portion and the transfer layer included in the first photoelectric conversion portion so as to cover an outer periphery of the first conductive portion;
The solid-state imaging device described in [16], wherein the at least one second insulating film is arranged between the second conductive portion, the second photoelectric conversion portion, the transfer layer included in the second photoelectric conversion portion, the first photoelectric conversion portion, and the transfer layer included in the first photoelectric conversion portion, so as to cover the outer periphery of the second conductive portion.
[18]
A semiconductor substrate;
a photoelectric conversion unit provided above the semiconductor substrate and configured to convert light into electric charges;
the photoelectric conversion unit includes at least a first electrode, a second electrode, a transfer layer, a photoelectric conversion film disposed between the second electrode and the transfer layer, and a charge storage electrode disposed apart from the first electrode and facing the transfer layer via an insulating layer;
the first electrode penetrates at least the photoelectric conversion film and the second electrode;
electrically connecting the first electrode to a charge storage portion formed in the semiconductor substrate;
an insulating film portion is disposed on at least a part of the outer periphery of the first electrode;
the insulating film portion is composed of at least one insulating film layer,
the at least one insulating film has fixed charges of the same type as the charges stored in the charge storage section.
[19]
The solid-state imaging device according to [18], wherein the at least one insulating film is arranged between the first electrode and the photoelectric conversion film and the second electrode so as to cover an outer periphery of the first electrode.
[20]
A semiconductor substrate;
N (N is an integer of 2 or more) photoelectric conversion units provided above the semiconductor substrate and configured to convert light into electric charges,
The N photoelectric conversion units have a stacked structure,
Each of the N photoelectric conversion units includes at least a first electrode, a second electrode, and a photoelectric conversion unit disposed between the first electrode and the second electrode,
the first electrode of the nth photoelectric conversion unit (n is 2 or more and N or less) counting from the semiconductor substrate side is electrically connected to the n-1th charge accumulation unit formed on the semiconductor substrate via an n-1th conductive portion that penetrates at least the 1st to the n-1th photoelectric conversion units (n is 2 or more and N or less, however, when n=2, it is the first photoelectric conversion unit counting from the semiconductor substrate);
an (n-1)th insulating film portion is disposed on at least a portion of an outer periphery of the (n-1)th conductive portion;
the (n-1)th insulating film portion is composed of at least one (n-1)th insulating film layer,
the at least one (n-1)th insulating film has a fixed charge of the same type as the charge accumulated in the (n-1)th charge accumulation section.
[21]
A solid-state imaging device according to [20], wherein the at least one n-1th insulating film is arranged between the n-1th conductive portion and the 1st to n-1th photoelectric conversion portions counting from the semiconductor substrate (however, when n=2, the 1st photoelectric conversion portion counting from the semiconductor substrate) so as to cover the outer periphery of the n-1th conductive portion.
[22]
the n-1 conductive portion penetrates through the first to n-1th photoelectric conversion portions counting from the semiconductor substrate (however, when n=2, the first photoelectric conversion portion counting from the semiconductor substrate) and the semiconductor substrate;
A solid-state imaging device as described in [20], wherein the at least one n-1th insulating film is arranged between the n-1th conductive portion and the 1st to n-1th photoelectric conversion portions (when n=2, the 1st photoelectric conversion portion) counting from the semiconductor substrate and the semiconductor substrate so as to cover the outer periphery of the n-1th conductive portion.
[23]
A solid-state imaging device described in any one of [20] to [22], wherein each photoelectric conversion unit of the N photoelectric conversion units is arranged at a distance from a first electrode included in each photoelectric conversion unit of the N photoelectric conversion units, and includes each charge storage electrode of the N charge storage electrodes arranged opposite the photoelectric conversion film included in each photoelectric conversion unit of the N photoelectric conversion units via an insulating layer.
[24]
the nth photoelectric conversion unit has a plurality of nth pixels,
One of the n-th pixels has one of the n-th charge storage electrodes,
The solid-state imaging device according to [23], wherein the nth charge accumulation portion is shared by the plurality of nth pixels.
[25]
the first electrode of the nth photoelectric conversion unit and each of the first to n-1th photoelectric conversion units counting from the semiconductor substrate (when n=2, the first photoelectric conversion unit counting from the semiconductor substrate) are electrically connected to the n-1th charge accumulation unit formed on the semiconductor substrate via the n-1th conductive unit penetrating at least the first to n-1th photoelectric conversion units counting from the semiconductor substrate (when n=2, the first photoelectric conversion unit counting from the semiconductor substrate);
the (n-1)th insulating film portion is disposed on at least a part of an outer periphery of the (n-1)th conductive portion;
the (n-1)th insulating film portion is composed of the at least one (n-1)th insulating film,
the at least one (n-1)th insulating film has fixed charges of the same type as the charges stored in the (n-1)th charge storage portion,
the nth photoelectric conversion unit has a plurality of nth pixels,
each of the first to n-1th photoelectric conversion units counting from the semiconductor substrate (when n=2, the first photoelectric conversion unit counting from the semiconductor substrate) has a plurality of first pixels to n-1th pixels,
Each of the n-th pixels has the n-th charge storage electrode,
Each of the first pixel to the (n-1)th pixel (wherein, when n=2, the first pixel) has a charge storage electrode, each of the first pixel to the (n-1)th pixel,
The solid-state imaging device according to [24], wherein the (n-1)th charge accumulation portion is shared by at least one of the nth pixel and at least one of each of the 1st pixel to the (n-1)th pixel.
[26]
The solid-state imaging device according to any one of [20] to [25], wherein the n-1 insulating film portion is composed of an n-1 insulating film having a fixed charge of the same type as the charge stored in the n-1 charge storage portion, and an n-1 insulating film having a high dielectric constant material.
[27]
the (n-1)th insulating film having the high dielectric constant material is disposed so as to cover an outer periphery of the (n-1)th conductive portion,
the (n-1)th insulating film having the fixed charge is disposed so as to cover an outer periphery of the (n-1)th insulating film having the high dielectric constant material,
the n-1th insulating film having the high dielectric constant material is disposed between the n-1th conductive portion and the n-1th insulating film having the fixed charge,
The solid-state imaging device according to [26], wherein the (n-1)th insulating film having the fixed charge is disposed between the (n-1)th insulating film having the high dielectric constant material and the (n-1)th photoelectric conversion section.
[28]
the (n-1)th insulating film having the fixed charge is disposed so as to cover an outer periphery of the (n-1)th conductive portion,
the (n-1)th insulating film having a high dielectric constant is disposed so as to cover an outer periphery of the (n-1)th insulating film having a fixed charge,
the (n-1)th insulating film having the fixed charge is disposed between the (n-1)th conductive portion and the (n-1)th insulating film having the high dielectric constant,
The solid-state imaging device according to [26], wherein the n-1th insulating film having the high dielectric constant is disposed between the n-1th insulating film having the fixed charge and the photoelectric conversion section.
[29]
A solid-state imaging device described in any one of [20] to [28], wherein each of the N photoelectric conversion units further includes N transfer layers arranged between the first electrode and the photoelectric conversion film.
[30]
The solid-state imaging device described in [29], wherein the at least one n-1th insulating film is arranged between the n-1th conductive portion and the transfer layer including the 1st to n-1th photoelectric conversion portions counting from the semiconductor substrate (however, when n=2, the 1st photoelectric conversion portion counting from the semiconductor substrate) and each of the 1st to n-1th photoelectric conversion portions counting from the semiconductor substrate (however, when n=2, the 1st photoelectric conversion portion counting from the semiconductor substrate).
[31]
the n-th conductive portion penetrates through the first to (n-1)th photoelectric conversion portions counting from the semiconductor substrate (however, when n=2, the first photoelectric conversion portion counting from the semiconductor substrate) and the semiconductor substrate;
The solid-state imaging device described in [29], wherein the at least one n-1th insulating film is arranged between the n-1th conductive portion and the transfer layer and the semiconductor substrate included in the 1st to n-1th photoelectric conversion portions counting from the semiconductor substrate (however, when n=2, the 1st photoelectric conversion portion counting from the semiconductor substrate), and each of the 1st to n-1th photoelectric conversion portions counting from the semiconductor substrate (however, when n=2, the 1st photoelectric conversion portion counting from the semiconductor substrate).
[32]
A semiconductor substrate;
a first photoelectric conversion unit provided above the semiconductor substrate and configured to convert light into electric charges;
a second photoelectric conversion unit provided above the first photoelectric conversion unit and configured to convert light into electric charges;
each of the first photoelectric conversion unit and the second photoelectric conversion unit includes at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode;
a connection hole penetrating the first photoelectric conversion unit and the semiconductor substrate is formed to electrically connect the first electrode of the second photoelectric conversion unit and a charge accumulation unit formed in the semiconductor substrate;
A conductive portion and an insulating film portion are formed in the connection hole,
the insulating film portion is composed of at least one insulating film layer,
the at least one insulating film has fixed charges of the same type as the charges stored in the charge storage section.
[33]
The solid-state imaging device according to [32], wherein the at least one insulating film is arranged between the conductive portion and the first photoelectric conversion portion so as to cover an outer periphery of the conductive portion.
[34]
The solid-state imaging device according to [32], wherein the at least one insulating film is arranged between the conductive portion, the first photoelectric conversion portion, and the semiconductor substrate so as to cover an outer periphery of the conductive portion.
[35]
A solid-state imaging device described in any one of [32] to [34], wherein each of the first photoelectric conversion unit and the second photoelectric conversion unit includes a charge storage electrode arranged at a distance from the first electrode and facing the photoelectric conversion film via an insulating layer.
[36]
the second photoelectric conversion unit has a plurality of pixels,
One pixel has one of the charge storage electrodes,
The solid-state imaging device according to any one of [32] to [35], wherein the charge storage section is shared by the plurality of pixels.
[37]
a connection hole penetrating the first photoelectric conversion unit and the semiconductor substrate is formed to electrically connect the first electrode of the first photoelectric conversion unit and the first electrode of the second photoelectric conversion unit to a charge accumulation unit formed in the semiconductor substrate;
A conductive portion and an insulating film portion are formed in the connection hole,
the insulating film portion is composed of at least one insulating film layer,
the at least one insulating film has fixed charges of the same type as the charges stored in the charge storage portion;
the first photoelectric conversion unit has a plurality of first pixels,
the second photoelectric conversion unit has a plurality of second pixels,
One of the first pixels has one of the charge storage electrodes,
One of the second pixels has one of the charge storage electrodes,
The solid-state imaging device according to any one of [32] to [36], wherein the charge storage section is shared by at least one of the first pixels and at least one of the second pixels.
[38]
A solid-state imaging device according to any one of [32] to [37], wherein the insulating film section is composed of an insulating film having a fixed charge of the same type as the charge stored in the charge storage section, and an insulating film having a high dielectric constant material.
[39]
an insulating film having the high dielectric constant material is disposed so as to cover an outer periphery of the conductive portion,
the insulating film having a fixed charge is disposed so as to cover an outer periphery of the insulating film having a high dielectric constant material,
an insulating film having the high dielectric constant material is disposed between the conductive portion and the insulating film having the fixed charge,
The solid-state imaging device according to [38], wherein the insulating film having a fixed charge is disposed between the insulating film having the high dielectric constant material and the first photoelectric conversion section.
[40]
the insulating film having a fixed charge is disposed so as to cover an outer periphery of the conductive portion,
the insulating film having a high dielectric constant is disposed so as to cover an outer periphery of the insulating film having a fixed charge,
the insulating film having a fixed charge is disposed between the conductive portion and the insulating film having a high dielectric constant,
The solid-state imaging device according to [38], wherein the insulating film having a high dielectric constant is disposed between the insulating film having a fixed charge and the first photoelectric conversion unit.
[41]
A solid-state imaging device described in any one of [32] to [40], wherein each of the first photoelectric conversion unit and the second photoelectric conversion unit further includes a transfer layer arranged between the first electrode and the photoelectric conversion film.
[42]
A solid-state imaging device as described in [41], wherein the at least one insulating film is arranged between the conductive portion and the first photoelectric conversion portion and the transfer layer included in the first photoelectric conversion portion so as to cover the outer periphery of the conductive portion.
[43]
A solid-state imaging device as described in [41], wherein the at least one insulating film is arranged between the conductive portion, the first photoelectric conversion portion, the transfer layer included in the first photoelectric conversion portion, and the semiconductor substrate so as to cover the outer periphery of the conductive portion.
[44]
A semiconductor substrate;
a first photoelectric conversion unit provided above the semiconductor substrate and configured to convert light into electric charges;
a second photoelectric conversion unit provided above the first photoelectric conversion unit and configured to convert light into electric charges;
each of the first photoelectric conversion unit and the second photoelectric conversion unit includes at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode;
electrically connecting the first electrode of the second photoelectric conversion unit and a charge accumulation unit formed on the semiconductor substrate via a conductive unit that penetrates at least a photoelectric conversion film of the first photoelectric conversion unit;
an insulating film portion is disposed on at least a part of the outer periphery of the conductive portion;
the insulating film portion is composed of at least one insulating film layer,
the at least one insulating film has fixed charges of the same type as the charges stored in the charge storage section.
[45]
An electronic device equipped with the solid-state imaging device according to any one of [1] to [44].

1 (1-1, 1-2, 1-10)...electrode for charge storage,
2 (2-1, 2-2)... second electrode,
3, 5, 35...photoelectric conversion film,
4, 4-1, 6, 46...transfer layer,
7, 8, 7000...first electrode (read electrode),
9...Photodiode (PD),
10, 10-3, 11...insulating layer,
12, 14, 15...conductive portion (through electrode),
13, 130, 131 (131-1, 131-2) ... vias,
30...semiconductor substrate,
41, 42, 43, 44, 45...Charge storage portion (floating diffusion (FD)),
51 (51-1, 51-2), 52 (52-1, 52-2), 53 (53-c, 53-d, 53-e, 53-f), 54 (54-c, 54-d , 54-e, 54-f), 55 (55-a, 55-b) , 56 (56-1, 56-2), 57 (57-1, 57-2), 58 (58-1, 58-2), 59 (59-1, 59-2), 510 (510-1 , 510-2), 511a (511a-1, 511a -2), 511b (511b-1, 511b-2), 513 (513-1, 513-2), 514 (514-1, 514-2), 515a (515a-1, 515a-2), 515b ( 515b-1, 515b-2), 516 (516-1, 516-2), 517 (517-1, 517-2), 518 (518-1, 518-2), 519 (519-1, 519- 2) An insulating film having a fixed charge;
150 (150-1, 150-2, 150-6, 150-7, 150-8, 150-9, 150-10, 150-11, 150-15, 150-16, 150-17),
160 (160-13, 160-14),
1214 (1214-1, 1214-2, 1214-6, 1214-7, 1214-8, 1214-9, 1214-10, 1214-11, 1214-15-1, 1214-15-2, 1214-16, 1214-17 ... Connection hole,
100, 200, 300, 4000, 500 (500a, 500b), 600, 700, 800, 900, 1000, 1100, 1200 (1200a, 1200b), 1300, 1400, 1500, 1600, 1700... solid-state imaging device.

Claims (17)

A semiconductor substrate;
a first photoelectric conversion unit provided above the semiconductor substrate and configured to convert light into electric charges;
a second photoelectric conversion unit provided above the first photoelectric conversion unit and configured to convert light into electric charges;
each of the first photoelectric conversion unit and the second photoelectric conversion unit includes at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode;
electrically connecting the first electrode of the first photoelectric conversion unit, the first electrode of the second photoelectric conversion unit, and a charge accumulation unit formed on the semiconductor substrate via a conductive portion that at least penetrates the first photoelectric conversion unit;
an insulating film portion is disposed on at least a part of the outer periphery of the conductive portion;
the insulating film portion is composed of at least one insulating film layer,
the at least one insulating film has fixed charges of the same type as the charges stored in the charge storage section. The solid-state imaging device according to claim 1, wherein the at least one insulating layer is disposed between the conductive portion and the first photoelectric conversion portion so as to cover the outer periphery of the conductive portion. the conductive portion penetrates the first photoelectric conversion portion and reaches the inside of the semiconductor substrate,
The solid-state imaging device according to claim 1 , wherein the at least one insulating film is disposed between the conductive portion and the first photoelectric conversion portion and the semiconductor substrate so as to cover an outer periphery of the conductive portion. The solid-state imaging device according to claim 1, wherein each of the first photoelectric conversion section and the second photoelectric conversion section includes a charge storage electrode that is disposed apart from the first electrode and faces the photoelectric conversion film via an insulating layer. the second photoelectric conversion unit has a plurality of pixels,
One pixel has one of the charge storage electrodes,
The solid-state imaging device according to claim 4 , wherein the charge storage portion is shared by the plurality of pixels. The solid-state imaging device according to claim 1, wherein the insulating film section is composed of an insulating film having a fixed charge of the same type as the charge stored in the charge storage section, and an insulating film having a high dielectric constant material. an insulating film having the high dielectric constant material is disposed so as to cover an outer periphery of the conductive portion,
the insulating film having a fixed charge is disposed so as to cover an outer periphery of the insulating film having a high dielectric constant material,
an insulating film having the high dielectric constant material is disposed between the conductive portion and the insulating film having the fixed charge,
The solid-state imaging device according to claim 6 , wherein the insulating film having a fixed charge is disposed between the insulating film having a high dielectric constant material and the first photoelectric conversion portion. The solid-state imaging device according to claim 1, wherein each of the first photoelectric conversion section and the second photoelectric conversion section further includes a transfer layer disposed between the first electrode and the photoelectric conversion film. 9. The solid-state imaging device according to claim 8, wherein the at least one insulating film is arranged between the conductive portion and the first photoelectric conversion portion and the transfer layer included in the first photoelectric conversion portion so as to cover an outer periphery of the conductive portion. the conductive portion penetrates the first photoelectric conversion portion and reaches the inside of the semiconductor substrate,
9. The solid-state imaging device of claim 8, wherein the at least one insulating film is arranged between the conductive portion and the first photoelectric conversion portion, the transfer layer included in the first photoelectric conversion portion, and the semiconductor substrate so as to cover an outer periphery of the conductive portion. A semiconductor substrate;
a first photoelectric conversion unit provided above the semiconductor substrate and configured to convert light into electric charges;
a second photoelectric conversion unit provided above the first photoelectric conversion unit and configured to convert light into electric charges;
a third photoelectric conversion unit provided above the second photoelectric conversion unit and configured to convert light into electric charges;
each of the first photoelectric conversion unit, the second photoelectric conversion unit, and the third photoelectric conversion unit includes at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode;
electrically connecting the first electrode of the first photoelectric conversion unit, the first electrode of the second photoelectric conversion unit, and a first charge accumulation unit formed on the semiconductor substrate via a first conductive portion that at least penetrates the first photoelectric conversion unit;
a first insulating film portion is disposed on at least a part of an outer periphery of the first conductive portion;
the first insulating film portion is composed of at least one first insulating film layer,
the at least one first insulating film has fixed charges of the same type as the charges stored in the first charge storage portion;
electrically connecting the first electrode of the first photoelectric conversion unit, the first electrode of the second photoelectric conversion unit, the first electrode of the third photoelectric conversion unit, and a second charge accumulation unit formed on the semiconductor substrate via a second conductive unit that penetrates at least the second photoelectric conversion unit and the first photoelectric conversion unit;
a second insulating film portion is disposed on at least a part of an outer periphery of the second conductive portion;
the second insulating film portion is composed of at least one layer of a second insulating film,
the at least one second insulating film has fixed charges of the same type as the charges stored in the second charge storage portion. the at least one first insulating film is disposed between the first conductive portion and the first photoelectric conversion portion so as to cover an outer periphery of the first conductive portion;
The solid-state imaging device of claim 11, wherein the at least one layer of second insulating film is arranged between the second conductive portion and the second photoelectric conversion portion so as to cover an outer periphery of the second conductive portion, and is also arranged between the second conductive portion and the first photoelectric conversion portion. The solid-state imaging device of claim 11, wherein each of the first photoelectric conversion unit, the second photoelectric conversion unit and the third photoelectric conversion unit includes a charge storage electrode arranged at a distance from the first electrode and facing the photoelectric conversion film via an insulating layer. The solid-state imaging device according to claim 11 , wherein each of the first photoelectric conversion unit, the second photoelectric conversion unit, and the third photoelectric conversion unit further includes a transfer layer disposed between the first electrode and the photoelectric conversion film. the at least one first insulating film is disposed between the first conductive portion, and the first photoelectric conversion portion and the transfer layer included in the first photoelectric conversion portion so as to cover an outer periphery of the first conductive portion;
The solid-state imaging device of claim 14, wherein the at least one second insulating film is arranged between the second conductive portion and the second photoelectric conversion portion, the transfer layer included in the second photoelectric conversion portion, the first photoelectric conversion portion, and the transfer layer included in the first photoelectric conversion portion, so as to cover an outer periphery of the second conductive portion. A semiconductor substrate;
N (N is an integer of 2 or more) photoelectric conversion units provided above the semiconductor substrate and configured to convert light into electric charges,
The N photoelectric conversion units have a stacked structure,
Each of the N photoelectric conversion units includes at least a first electrode, a second electrode, and a photoelectric conversion unit disposed between the first electrode and the second electrode,
the first electrode of the n-1th (n is 2 or more and N or less) photoelectric conversion unit counting from the semiconductor substrate side, the first electrode of the nth (n is 2 or more and N or less) photoelectric conversion unit counting from the semiconductor substrate side, and the n-1th charge accumulation unit formed on the semiconductor substrate are electrically connected via an n-1th conductive portion penetrating at least the 1st to the n-1th photoelectric conversion units (n is 2 or more and N or less, however, when n=2, it is the first photoelectric conversion unit counting from the semiconductor substrate);
an (n-1)th insulating film portion is disposed on at least a portion of an outer periphery of the (n-1)th conductive portion;
the (n-1)th insulating film portion is composed of at least one (n-1)th insulating film layer,
the at least one (n-1)th insulating film has a fixed charge of the same type as the charge accumulated in the (n-1)th charge accumulation section. An electronic device comprising the solid-state imaging device according to claim 1 .