JP7612422B2 - Semiconductor Manufacturing Equipment - Google Patents

Description

The present invention relates to semiconductor manufacturing equipment.

In the plasma processing equipment of semiconductor manufacturing equipment, it is believed that by maintaining the wafer being processed at a low temperature, etching at a higher etching rate and a higher selectivity ratio than before can be achieved. For example, Non-Patent Document 1 reports the relationship between the Si/resist selectivity ratio and the wafer temperature, and shows that the selectivity is significantly improved at temperatures below -50°C.

If the advantage of etching at low temperatures is due to the effect of plasma condensation, it is necessary to further reduce the temperature of the wafer. In that case, there is a risk of short circuit and damage due to condensation around the high voltage handled by the electrostatic chuck. As a countermeasure, there is a limit to how low the dew point of the gas that can be used is, and this requires increased costs for the low dew point gas used and huge investments for dry air. Furthermore, there are no low dew point gases that can be used for cooling below -100°C, so condensation is a constant problem in the equipment.

In addition, the development of technology and equipment for cooling wafers is still in its infancy, and it is necessary to respond to any risks that arise.

Currently, semiconductor manufacturing equipment uses electrostatic chucks (ESC) to hold wafers. At the same time, semiconductor manufacturing equipment also needs to be equipped with an RF power source. Therefore, if the high-voltage terminal that handles high voltage for the ESC and the RF plate short circuit due to condensation, the ESC will lose its function, and in the worst case scenario, the short circuit could damage the equipment.

Furthermore, if no measures are taken below the cooling area, the bottom of the equipment will also become cold, and condensation and frost may form where it comes into contact with the outside air. And because semiconductor manufacturing equipment has many cables, there is also the risk of electrical leakage.

First, to eliminate the risk of condensation, the base plate of the device that comes into contact with the outside air is heated to a high temperature to prevent electrical leakage. Then, to prevent condensation that can cause internal short circuits, the internal space is isolated from the outside and positively pressurized, reducing the amount of internal moisture to an absolute minimum. It was necessary to create a structure that would prevent condensation in dangerous areas by providing areas that would preferentially absorb any remaining moisture.

Patent document 1 describes a device that prevents condensation when cooling the shower head side of the upper electrode. In Patent document 1, the upper electrode is cooled because it heats up when plasma is generated.

JP 2020-107762 A

https://www.jstage.jst.go.jp/article/oubutsu1932/59/11/59_11_1428/_pdf/-char/ja

However, the device in Patent Document 1 had the problem that it was not sufficient to actively cool the wafer and perform cryo-etching. Therefore, if condensation occurred, there was a risk of shorting out the high voltage part of the HV (high voltage) terminal and the RF (radio frequency) electrode, resulting in damage. In addition, if airflow and moisture content were not taken into consideration, there was a risk of condensation forming in the relevant area due to localized gas cooling.

In one embodiment, the semiconductor manufacturing apparatus includes a vacuum chamber, an electrostatic chuck provided within the vacuum chamber, a cooling unit for cooling the electrostatic chuck, an RF plate attached to the lower portion thereof, a casing for holding the cooling unit, a base plate facing the RF plate and forming an internal space together with the casing, and a gas supply unit capable of sealing a low dew point gas in the internal space.

In one embodiment of the semiconductor manufacturing equipment, condensation can be prevented and damage caused by short circuits can be prevented.

In one embodiment of the semiconductor manufacturing device, the casing may be composed of two or more parts, and may include O-rings that seal the area where the cooling unit and the casing contact, the area where the casings contact each other, and the area where the casing and the base plate contact.

In one embodiment of the semiconductor manufacturing device, the space between the vacuum portion and the internal space containing gas can be sealed.

In one embodiment, the semiconductor manufacturing apparatus may include an RF cable that supplies power to generate plasma in the vacuum chamber, and O-rings that seal the contact area between the RF cable and the base plate and the contact area between the RF cable and the vacuum chamber.

According to one embodiment of the semiconductor manufacturing device, it is possible to seal the space between the outside atmosphere and the internal space containing gas.

In one embodiment, the semiconductor manufacturing apparatus may be provided with a low dew point gas supply unit that constantly or intermittently supplies a low dew point gas under pressure to the internal space at a constant pressure.

According to one embodiment of the semiconductor manufacturing apparatus, the internal space can be maintained at a positive pressure and can be filled with the low dew point gas, thereby preventing the inflow of moisture-containing gas from the outside atmosphere.

The O-ring used in one embodiment of the semiconductor manufacturing equipment has both sides of a highly plasma-resistant sealing material covered with a cryogenic-compatible sealing material, and the cryogenic-compatible sealing material fits into a groove formed in the clamping members, and the highly plasma-resistant sealing material may be positioned in the gap between the clamping members.

In one embodiment of the semiconductor manufacturing device, the O-ring can reduce wear caused by plasma and ensure sealing performance at extremely low temperatures.

In one embodiment of the semiconductor manufacturing equipment, the O-ring may have a flange portion in the highly plasma-resistant sealing material portion that is wider than the O-ring groove width.

In one embodiment of the semiconductor manufacturing device, damage to the cryogenic seal member caused by plasma entering the groove can be prevented.

In one embodiment, the semiconductor manufacturing apparatus may be provided with a trap that adsorbs moisture within the internal space.

In one embodiment of the semiconductor manufacturing equipment, the moisture contained in the internal space can be reduced by adsorption, and even a small amount of moisture can be collected in a safe location that will not cause short circuits or damage, providing a condensation prevention measure.

In one embodiment, the semiconductor manufacturing equipment may be configured to promote the narrow space (labyrinth structure) between the RF plate and the block material through which the fluid for cooling the cooling section flows to have the lowest temperature in the internal space, and to function as a trap that attracts moisture generated by condensation.

In one embodiment, the semiconductor manufacturing device may have a mechanism that functions as a trap to attract moisture generated by condensation by attaching a branched pipe branching off from the flow path to the block material in the internal space.

In one embodiment of the semiconductor manufacturing equipment, the moisture contained in the internal space can be reduced by adsorption, and even trace amounts of moisture near the electrostatic chuck or RF plate can be collected in a safe location that will not cause short circuits or damage, providing a condensation prevention measure.

In one embodiment, the semiconductor manufacturing device may detect friction, wear, or cracks and breakage of the casing based on an AE sensor provided on the internal space side of the casing, the amplitude value of the vibration detected by the AE sensor, and the shape of the vibration waveform.

In one embodiment of the semiconductor manufacturing equipment, the casing is exposed to high temperatures during plasma generation, and the temperature difference between the casing and the low-temperature RF plate increases, making it possible to detect signs of damage and prevent damage to the semiconductor manufacturing equipment.

The semiconductor manufacturing equipment of the present invention can prevent condensation when used at extremely low temperatures, damage due to short circuits, deterioration of vacuum sealing properties caused by damage to O-rings by plasma, and damage to the casing due to temperature differences between components.

1 is a cross-sectional view showing an outline of a semiconductor manufacturing apparatus according to a first embodiment; FIG. 11 is a contour diagram showing a cross section of the temperature distribution when the internal space is circulated by a pump. 3 is a contour diagram showing the temperature distribution in an enlarged portion of the gap on the inner periphery side between the RF plate 141 and the block material 111 of the casing 106 in FIG. 2. 3 is a contour diagram showing the temperature distribution in an enlarged portion of the gap on the outer periphery side between the RF plate 141 and the block material 111 of the casing 106 in FIG. 2. FIG. 11 is a contour diagram showing a cross section of the temperature distribution when the internal space is not circulated by a pump. 6 is a contour diagram showing the temperature distribution in an enlarged portion of the gap on the inner periphery side between the RF plate 141 and the block material 111 of the casing 106 in FIG. 5. 6 is a contour diagram showing the temperature distribution in an enlarged portion of the gap on the outer periphery side between the RF plate 141 and the block material 111 of the casing 106 in FIG. 5. 11 is a cross-sectional view showing details of an O-ring of a semiconductor manufacturing apparatus according to a second embodiment. FIG. FIG. 11 is a cross-sectional view showing an outline of a semiconductor manufacturing apparatus according to a third embodiment. FIG. 11 is a cross-sectional view showing an outline of a semiconductor manufacturing apparatus according to a fourth embodiment. 1 is a graph showing an example of an AE waveform during friction and wear; 1 is a graph showing an example of an AE waveform at the time of cracking or breaking.

(Embodiment 1)
Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view showing an outline of a semiconductor manufacturing apparatus according to the first embodiment. In FIG. 1, the semiconductor manufacturing apparatus 100 includes a vacuum chamber 101, an electrostatic chuck 102, a cooling unit 103, a base plate 105, a casing 106, an internal space gas supply unit 107, an O-ring 108, a substrate-electrostatic chuck gas supply mechanism 109, and a focus ring 110. The plasma generating unit is located in a vacuum above the electrostatic chuck 102, and the configuration of the upper electrode is omitted in the description of the first embodiment and is not shown in FIG. 1. The casing 106 may be composed of one component or two or more components.

The vacuum chamber 101 is a container that houses the electrostatic chuck 102, the cooling unit 103, the base plate 105, and the casing 106 inside. For example, the vacuum chamber 101 is a plasma processing chamber that can evacuate the space 160 and is equipped with a heating element 113 that can heat the vacuum container. The vacuum chamber 101 is equipped with an exhaust device 112 for evacuating the space 160. The exhaust device 112 is a vacuum pump, and the exhaust device 112 and the vacuum chamber 101 are connected by piping (not shown).

The electrostatic chuck 102 is configured to electrostatically attract and fix the processing substrate 10. The electrostatic chuck 102 is provided in the vacuum chamber 101. The electrostatic chuck 102 is connected to a DC power supply 121 via an HV terminal 122. The DC power supply 121 supplies the high voltage required to electrostatically attract and fix the processing substrate to the electrostatic chuck 102. The electrostatic chuck 102 is placed on a cooling section 103 via an appropriate bonding material. The electrostatic chuck 102 also includes an optical fiber thermometer 123 that controls the temperature of the electrostatic chuck 102.

The cooling unit 103 is configured to cool the electrostatic chuck 102. The cooling unit 103 includes a cooling plate 131 and a cooling liquid supply unit 132. The cooling plate 131 has a flow path 133 therein through which the cooling liquid circulates. The cooling liquid supply unit 132 cools the cooling liquid. The cooling liquid supply unit 132 then circulates the cooling liquid within the flow path 133.

The RF plate 141 functions as a lower electrode that is paired with an upper electrode (not shown). In addition, an RF cable 142 connects the RF plate 141 to an AC power source 143. The AC power source 143 generates high frequency waves for generating plasma. The RF cable 142 supplies power for generating plasma in the vacuum chamber. Under appropriate conditions, the power supply from the RF cable 142 can generate plasma in the plasma generation section in the vacuum above the processing substrate 10.

The base plate 105, which faces the RF plate 141 and forms an internal space 161 with the casing 106, holds the casing 106. The base plate 105 also seals the block material 111 that covers the inlet tube and the space below the cooling plate 131.

The casing 106 is a casing that holds the RF plate 141 that holds the cooling unit 103. The casing 106 contacts the cooling unit 103 and the base plate 105 to form an internal space 161. The casing 106 is preferably made of ceramics to provide insulation between the RF plate 141 and the base plate 105.

The internal space gas supply unit 107 includes a low dew point gas supply unit 171. The internal space gas supply unit 107 also includes a dew point meter 172, which is a mechanism for circulating gas in the internal space 161, and a pump 173. The low dew point gas supply unit 171 pressurizes and supplies low dew point gas to the internal space 161 so that the pressure is more positive than the external atmosphere. The dew point meter 172 measures the dew point of the internal space 161. The pump 173 circulates gas between the internal space 161 and the dew point meter 172. With these configurations, the low dew point gas supply unit 171 manages the air pressure in the internal space 161, and automatically supplies and repressurizes gas when the pressure falls below a certain level. The low dew point gas supply unit 171 may also be configured to constantly supply gas at a constant pressure to maintain a positive pressure even when leakage pressure occurs.

The substrate-electrostatic chuck gas supply mechanism 109, which supplies gas between the processing substrate 10 and the electrostatic chuck 102, includes a gas supply hole 191 and a gas control unit 192. The gas supply hole 191 is connected to the gas control unit 192 by a flow path or piping, and ejects gas from the surface of the electrostatic chuck 102. The gas control unit 192 supplies gas to the gas supply hole 191.

Next, the results of a simulation regarding the cooling of the semiconductor manufacturing equipment 100 will be described.
First, Figures 2 to 4 show the temperature distribution when the pump 173 in the internal space 161 is operated. Figure 2 is a contour diagram showing the temperature distribution of the gas in a cross section passing through the block material 111 in the internal space 161. In Figure 2, high and low temperatures are expressed by light and dark colors. In Figure 2, for example, "-6.522528E-03" means "-6.522528 x 10 ^-3 ". Numerical expressions are the same in the following figures.

Figure 3 is an enlarged contour diagram showing the temperature distribution of the gas in the gap between the RF plate 141 and the block material 111. In Figure 3, the temperature is expressed by light and dark shades of color. In Figure 3, the left side is the center side, and the right side is the block material 111 side. Figure 4 is also an enlarged contour diagram showing the temperature distribution of the gas in the gap between the RF plate 141 and the block material 111. In Figure 4, the temperature is expressed by light and dark shades of color. In Figure 4, the left side is the block material 111 side, and the right side is the casing 106 side.

Next, the temperature distribution when the pump 173 in the internal space 161 is operated is shown. Figure 5 is a contour diagram showing the temperature distribution of the gas in a cross section passing through the block material 111 of the internal space 161. In Figure 5, the temperature is expressed by light and dark shades of color. Also, Figure 6 is an enlarged contour diagram showing the temperature distribution of the gas in the gap between the RF plate 141 and the block material 111. In Figure 6, the temperature is expressed by light and dark shades of color. In Figure 6, the left side is the center side, and the right side is the block material 111 side. Figure 7 is also an enlarged contour diagram showing the temperature distribution of the gas in the gap between the RF plate 141 and the block material 111. In Figure 7, the temperature is expressed by light and dark shades of color. In Figure 7, the left side is the block material 111 side, and the right side is the casing 106 side.

Figures 2 to 4 show that by using a pump to spontaneously promote circulation of the internal space 161, the temperature of the gas does not drop near the high voltage parts in the internal space 161, and the gas temperature in the labyrinth structure formed between the RF plate 141 and the block material 111, where there is little flow, is minimized, and it functions as a trap that induces condensation. Figures 5 to 7 show that even with natural convection, the temperature of the gas is unlikely to drop near the high voltage parts in the internal space 161, and the gas temperature in the labyrinth structure formed between the RF plate 141 and the block material 111 is minimized, and it can function as a trap that induces condensation.

The semiconductor manufacturing apparatus 100 is suitable for use as a dry etching apparatus that uses plasma. Next, the semiconductor manufacturing apparatus 100 will be described when used as a dry etching apparatus that uses plasma. In a dry etching apparatus that uses plasma, a wafer placed on the electrostatic chuck 102 is maintained at an extremely low temperature. The semiconductor manufacturing apparatus 100 is equipped with a cooling section 103 near the electrostatic chuck 102. That is, in order to maintain the extremely low temperature, a cooling plate 131 is present directly below the electrostatic chuck 102, and heat is recovered by flowing a cooling liquid into a flow path 133.

In addition, in order to reduce the expansion of the coolant flow path pipes due to temperature in the internal space 161, the flow path may be made of a block material 111 used as a ceramic coolant piping in the casing 106. The block material 111 is connected to the cooling plate 131 via an O-ring 108.

In addition, if condensation is to be promoted in areas where condensation is not a problem, a mechanism that preferentially adsorbs moisture can be installed by attaching a branched pipe (condensation induction pipe) to the block material 111 to directly expose the coolant temperature on the IN side.

To chuck the processing substrate 10, an HV terminal 122 is connected to the electrostatic chuck 102, and a mechanism for passing high voltage is provided. An RF plate 141 is placed under the cooling plate 131, and is connected to an AC power source 143 via an RF cable 142. A base plate 105 is placed on the surface facing the RF plate 141 to isolate the internal space 161 from the outside air, and all connections to the outside are sealed with seals, packing, etc.

In addition, if the block material 111 comes into contact with the RF plate 141 or the cooling plate 131, the RF plate 141 will be cooled further, promoting condensation on the RF plate 141 side. Therefore, to prevent contact with the cooling liquid piping block, the O-ring 108 is used to insulate the relevant parts. In this case, the O-ring 108 drops to the same temperature as the block material 111, so an O-ring 108 that can be used in that temperature range is used.

In addition, in order to prevent condensation at the interface between the base plate 105 and the outside air, a heater that can maintain the base plate 105 at a high temperature may be provided in a component below the base plate 105. Alternatively, the base plate 105 may be maintained at a high temperature by thermal conduction from a heating element 113 provided in the vacuum chamber 101. By maintaining the base plate 105 at a high temperature, the base plate 105 does not become cold, preventing condensation at the contact surface between the base plate 105 and the outside air, and preventing leakage current caused by water droplets falling on cables (not shown) present below the base plate 105.

A circulating pump 173 is provided to prevent major areas that may be damaged if condensation occurs due to the temperature of the gas in the internal space 161 from falling below the dew point locally. Also, to prevent the flow from the pump 173 from directly hitting the RF plate 141, a diffusion plate may be provided on the inlet side to encourage flow in the internal space 161. The pump 173 also serves to provide a constant flow rate so that the dew point meter 172 can measure accurately.

Before low-temperature work, the internal space 161 is purged with low-dew-point gas from the low-dew-point gas supply unit 171, and then sealed and pressurized to a positive pressure. Taking into account the phenomenon that the pressure also drops as the temperature of the internal gas drops during low-temperature work, the amount of pressurization is set so that a positive pressure is maintained even at low temperatures.

In this way, according to the semiconductor manufacturing apparatus of the first embodiment, the internal space 161 is filled with a low dew point gas and is under positive pressure, preventing the intrusion of outside air, and is equipped with a mechanism that preferentially attracts and adsorbs even the smallest amount of moisture remaining in the gas in the internal space 161, so moisture does not adhere to areas where short circuits due to condensation may occur.

In addition, the semiconductor manufacturing device of embodiment 1 provides a fundamental solution to the problem of condensation, which tends to become more complicated, requires the introduction of sealing technology and designs for each joint, and increases costs.

(Embodiment 2)
In the second embodiment, an example having a characteristic configuration of an O-ring will be described. Fig. 8 is a cross-sectional view showing the details of an O-ring of a semiconductor manufacturing apparatus according to the second embodiment. In Fig. 8,

The O-ring 108 includes O-ring 801, O-ring 802, and O-ring 803. And,

The material of the O-ring 801 is plasma resistant (chemical reaction, physical impact), has extremely low wear, does not generate particles, and does not release metal components.

The O-rings 802 and 803 are made of a material that does not lose elasticity to the extent that the degree of vacuum can be maintained even at -110°C.

Then, stack the O-ring 801 so that both sides are sandwiched between O-rings 802 and 803.

To attach the O-ring 108, dovetail grooves are provided on both A and B of the casing 106, as shown in FIG. 8.

In general, materials with high low-temperature performance have low radical resistance and are subject to large plasma wear. In embodiment 2, even if O-ring 801 shrinks inward when exposed to extremely low temperatures, the components of O-ring 802 are resistant to extremely low temperatures, so the crushed portion of O-ring 802 expands to the extent that O-ring 801 shrinks, and sealing performance is not lost (Situation 1 in Figure 8).

In addition, it is desirable for the O-ring 801 to have a plasma intrusion prevention structure with a flange that is wider than the O-ring groove width. Even if the O-ring 801 is exposed to plasma, the protruding portion of 811 prevents the plasma from intruding into the O-ring 802, so the O-ring 802 will not be exposed to plasma (Situation 2 in Figure 8).

In this way, according to the semiconductor manufacturing apparatus of embodiment 2, a highly plasma-resistant sealing material is used in the position where plasma hits through the gap, and an extremely low-temperature compatible sealing material is used to cover both sides of the position where plasma does not hit through the gap, thereby preventing the O-ring from being worn down by plasma and ensuring sealing performance at low temperatures .

(Embodiment 3)
In the third embodiment, an example in which a trap is provided in the internal space 161 will be described. FIG. 9 is a cross-sectional view showing an outline of a semiconductor manufacturing apparatus according to the third embodiment. In FIG. 9, the same components as those in FIG. 1 are given the same numbers, and the description thereof will be omitted. In FIG. 9, a semiconductor manufacturing apparatus 900 includes a vacuum chamber 101, an electrostatic chuck 102, a cooling unit 103, a base plate 105, a casing 106, an internal space gas supply unit 107, an O-ring 108, a substrate-electrostatic chuck gas supply mechanism 109, a focus ring 110, and a trap 901. The plasma generating unit is located in a vacuum above the electrostatic chuck 102, and the configuration of the upper electrode is omitted in the description of the first embodiment and is not shown in FIG. 1. The casing 106 may be composed of one component, or may be composed of two or more components.

Trap 901 is a trap that can preferentially adsorb minute amounts of moisture present in internal space 161. Trap 901 is connected to a tube that branches off flow path 133 from cooling section 103 and extends into the internal space. Trap 901 has a portion that functions as a moisture adsorption mechanism and has the lowest temperature on the surface exposed to internal space 161.

In this way, the semiconductor manufacturing apparatus of embodiment 3 can reduce moisture in the internal space, providing a measure against condensation that can recover even trace amounts of moisture. By intentionally lowering the gas temperature in the gap formed between the RF plate 141 and the block material 111, it can function as a trap that attracts moisture generated by condensation. Alternatively, by attaching a branched pipe branched off from the flow path 133 to the block material 111 in the internal space, it can function as a trap that attracts moisture generated by condensation.

(Embodiment 4)
In the fourth embodiment, an example in which an AE sensor is provided will be described. FIG. 10 is a cross-sectional view showing an outline of a semiconductor manufacturing apparatus according to the fourth embodiment. In FIG. 10, the same components as those in FIG. 1 are given the same numbers, and the description will be omitted. In FIG. 10, a semiconductor manufacturing apparatus 1000 includes a vacuum chamber 101, an electrostatic chuck 102, a cooling unit 103, a base plate 105, a casing 106, an internal space gas supply unit 107, an O-ring 108, a substrate-electrostatic chuck gas supply mechanism 109, a focus ring 110, an AE sensor 1001, and an AE sensor circuit 1002. The plasma generating unit is located in a vacuum above the electrostatic chuck 102, and the configuration of the upper electrode is omitted in the description of the first embodiment and is not shown in FIG. 1. The casing 106 may be composed of one component, or may be composed of two or more components.

The AE sensor 1001 converts the amplitude value of the vibration of the casing 106 that forms the internal space 161 into an electrical signal and outputs it to the AE sensor circuit 1002.

The AE sensor circuit 1002 detects electrical signals indicating friction and wear between components from the amplitude value of the AE sensor 1001, and also detects electrical signals that predict damage to components.

Figure 11 is a graph showing an example of an AE waveform during friction and wear. In Figure 11, the horizontal axis shows time, and the vertical axis shows amplitude.

Figure 12 is a graph showing an example of an AE waveform during cracking and fracture. In Figure 12, the horizontal axis shows time, and the vertical axis shows amplitude.

When the AE sensor circuit 1002 detects the AE waveforms in Figures 11 and 12, it outputs the detection result as a signal or display. Friction/wear or cracks/breakage can be detected based on the amplitude value of the vibration detected by the AE sensor 1001 and the shape of the vibration waveform.

In this way, according to the semiconductor manufacturing apparatus of the fourth embodiment, it is possible to detect damage caused by the casing being exposed to high temperatures during plasma generation, which increases the temperature difference with the low-temperature RF plate. In addition, a mechanism may be provided that analyzes the shape of the generated AE waveform and notifies the user of a phenomenon occurring within the vacuum chamber 101 with an alarm or the like.

The present invention is not limited to the above-described embodiment, and can be modified as appropriate without departing from the spirit of the invention. For example, embodiments 1 to 4 can be combined in any way.

The applicable temperature range of this invention is below the temperature at which condensation occurs for gas at room temperature. More preferably, this invention is most effective in the extremely low temperature range of -60°C or below, where it is difficult to obtain a corresponding low dew point gas. However, since there is a limit to the cold resistance temperature of sealing materials capable of vacuum sealing, this does not apply to extremely low temperatures below -110°C.

10 Processing substrate 100, 900, 1000 Semiconductor manufacturing apparatus 101 Vacuum chamber 102 Electrostatic chuck 103 Cooling section 105 Base plate 106 Casing 107 Internal space gas supply section 108 O-ring 109 Substrate-electrostatic chuck gas supply mechanism 110 Focus ring 111 Block material 113 Heating element 160 Space

Claims (13)

A vacuum chamber;
an electrostatic chuck provided in a vacuum chamber;
A cooling unit that cools the electrostatic chuck;
a casing that holds the cooling unit via an RF plate;
a base plate facing the RF plate and holding the casing;
a gas supply unit capable of sealing a low dew point gas in an internal space surrounded by the RF plate, the casing, and the base plate ;
The casing is composed of two or more parts,
A semiconductor manufacturing apparatus comprising: O-rings for sealing a portion where the cooling portion and the casing contact each other, a portion where the casings contact each other, and a portion where the casing and the base plate contact each other. an RF cable for supplying power for generating plasma in the vacuum chamber;
2. The semiconductor manufacturing apparatus according to claim 1, further comprising O-rings for sealing a portion where the RF cable contacts the base plate, a portion where the RF cable contacts the vacuum chamber, and a portion where the RF cable contacts a component connected to the base plate. A vacuum chamber;
an electrostatic chuck provided in a vacuum chamber;
A cooling unit that cools the electrostatic chuck;
a casing that holds the cooling unit via an RF plate;
a base plate facing the RF plate and holding the casing;
a gas supply unit capable of sealing a low dew point gas in an internal space surrounded by the RF plate, the casing, and the base plate;
an RF cable for supplying power for generating plasma in the vacuum chamber;
A semiconductor manufacturing apparatus comprising O-rings for sealing a portion where the RF cable contacts the base plate, a portion where the RF cable contacts the vacuum chamber, and a portion where the RF cable contacts a component connected to the base plate. The O-ring is made of a highly plasma-resistant sealing material, and both sides of the O-ring are covered with a cryogenic sealing material.
4. The semiconductor manufacturing apparatus according to claim 1, wherein the cryogenic seal member is fitted in a groove formed in a clamping member, and a highly plasma-resistant seal material is positioned in a gap between the clamping members. A vacuum chamber;
an electrostatic chuck provided in a vacuum chamber;
A cooling unit that cools the electrostatic chuck;
a casing that holds the cooling unit via an RF plate;
a base plate facing the RF plate and holding the casing;
a gas supply unit capable of sealing a low dew point gas in an internal space surrounded by the RF plate, the casing, and the base plate;
an O-ring provided in the vacuum chamber;
The O-ring is made of a highly plasma-resistant sealing material, and both sides of the O-ring are covered with a cryogenic sealing material.
A semiconductor manufacturing device in which the cryogenic seal member is fitted into a groove formed in a clamping member, and a highly plasma-resistant seal material is positioned in a gap between the clamping members. 6. The semiconductor manufacturing apparatus according to claim 4, wherein the O-ring has a flange portion on a portion of the highly plasma-resistant sealing material that is wider than a width of the O-ring groove. 7. The semiconductor manufacturing apparatus according to claim 1, further comprising a trap for adsorbing moisture in the gas within the internal space. A vacuum chamber;
an electrostatic chuck provided in a vacuum chamber;
A cooling unit that cools the electrostatic chuck;
a casing that holds the cooling unit via an RF plate;
a base plate facing the RF plate and holding the casing;
a gas supply unit capable of sealing a low dew point gas in an internal space surrounded by the RF plate, the casing, and the base plate;
a trap that adsorbs moisture in the gas within the internal space. The semiconductor manufacturing device according to claim 7 or 8, which has a mechanism that functions as the trap to attract moisture generated by condensation by lowering the gas temperature in the gap formed between the RF plate and the block material through which the fluid for cooling the cooling section flows. The semiconductor manufacturing device according to any one of claims 7 to 9, further comprising a mechanism for functioning as the trap to attract moisture generated by condensation by attaching a branched pipe branched off from the flow path to a block material in the internal space. An AE sensor provided on the inner space side of the casing;
11. The semiconductor manufacturing device according to claim 1, wherein friction/wear or crack/fracture is detected based on the amplitude value of vibration and the shape of a vibration waveform detected by the AE sensor. A vacuum chamber;
an electrostatic chuck provided in a vacuum chamber;
A cooling unit that cools the electrostatic chuck;
a casing that holds the cooling unit via an RF plate;
a base plate facing the RF plate and holding the casing;
a gas supply unit capable of sealing a low dew point gas in an internal space surrounded by the RF plate, the casing, and the base plate;
An AE sensor provided on the inner space side of the casing;
A semiconductor manufacturing device that detects friction, wear, or cracks and breakage based on the amplitude value of vibration and the shape of the vibration waveform detected by the AE sensor. 13. The semiconductor manufacturing apparatus according to claim 1, further comprising a low dew point gas supply unit which constantly or intermittently supplies a low dew point gas under pressure at a constant pressure to the internal space.

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