JP7615286B2 - Semiconductor Device - Google Patents

Description

The present invention relates to a semiconductor device that transmits signals between multiple semiconductor elements mounted in a single package using an insulating element.

For example, an inverter device mounted on an electric vehicle or a hybrid vehicle is required to convert a high-voltage DC power source into AC power, and therefore uses a semiconductor device equipped with an insulating element. The inverter device includes, for example, the semiconductor device and a plurality of switching elements such as an IGBT (insulated gate bipolar transistor) or a MOSFET (metal oxide semiconductor field effect transistor). The semiconductor device includes a control element, an insulating element, and a driving element. In an inverter device for an electric vehicle, a control signal output from an ECU (engine control unit) is input to the control element of the semiconductor device. The control element converts the control signal into a PWM (pulse width modulation) control signal and transmits it to the driving element via the insulating element. The driving element drives a plurality of switching elements based on the PWM control signal. This converts the DC power of the vehicle battery into three-phase AC power for driving the motor.

In this semiconductor device, the power supply voltage supplied to the control element is low (about 5V), while the power supply voltage supplied to the drive element is high (about 600V or more). Therefore, when transmitting a PWM control signal from the control element to the drive element, it is necessary to pass through an insulating element. Conventionally, the insulating element was a photocoupler. However, in recent years, inductor-coupled insulating elements are becoming more and more popular. Inductor-coupled insulating elements transmit electric signals in an insulating state by inductively coupling two inductors (coils). That is, one coil is used to convert an electric signal into magnetism, and the other coil is used to convert the magnetism into an electric signal, thereby transmitting an electric signal in an insulating state. Unlike photocouplers, inductor-coupled insulating elements contribute to the miniaturization of semiconductor devices, and have the advantage that they can handle high-speed switching operations of multiple switching elements because there is almost no delay in the transmission of high-frequency electric signals. For example, Patent Document 1 discloses a semiconductor device that incorporates a semiconductor element with a transmission circuit, an inductor-coupled insulating element, and a driver element (gate driver IC) with a reception circuit in a single package.

A semiconductor device that includes semiconductor elements having a significant potential difference in the power supply voltage, such as a control element and a drive element, in one package is required to have an insulating element and an improved dielectric strength voltage. When the package of the semiconductor device is an SOP (Small Outline Package), it is preferable in terms of improving the dielectric strength voltage that a plurality of terminals exposed from a side surface of one sealing resin and a plurality of terminals exposed from a side surface of the other sealing resin located on the opposite side of the element such as the drive element are arranged with a sufficient distance between them. It is also preferable in terms of improving the dielectric strength voltage that no part of the lead other than the plurality of terminals is exposed from the sealing resin. The higher the power supply voltage supplied to the motor to be controlled by the inverter device, the stronger the demand for improving the dielectric strength voltage.

For example, Patent Document 2 discloses the structure of a conventional SOP semiconductor device. In the manufacturing process of the semiconductor device, a support member called an island support supports an island portion (die pad) on which a semiconductor element and the like are mounted. The island support extends perpendicularly to the direction in which the multiple terminals extend, with one end connected to the island portion and the other end connected to the outer frame of the lead. After the formation of the encapsulating resin, the island support is no longer necessary because the island portion is supported by the encapsulating resin, and when the semiconductor device is cut from the lead, the island support is also cut. At this time, the cut surface of the island support is exposed from the side of the encapsulating resin. Because the cut surface is part of the lead, the structure of the semiconductor device is not suitable for improving the dielectric strength voltage.

JP 2013-51547 A JP 2000-68437 A

In view of the above circumstances, the present invention aims to provide a semiconductor device with improved dielectric strength.

The semiconductor device provided by the present invention comprises a semiconductor element, a die pad on which the semiconductor element is mounted, a plurality of first terminals arranged along a first direction, a plurality of second terminals arranged along the first direction and positioned on the opposite side of the plurality of first terminals across the semiconductor element in a second direction perpendicular to the first direction, and a conductive support member including a support terminal connected to the die pad, and a sealing resin covering each of the plurality of first terminals, the plurality of second terminals, and a portion of the support terminal, the semiconductor element, and the die pad, the sealing resin having a pair of resin first side faces formed at a distance in the second direction and a pair of resin second side faces formed at a distance in the first direction, the plurality of first terminals and the plurality of second terminals being exposed from the pair of resin first side faces, respectively, and the conductive support member not being exposed from the pair of resin second side faces.

In the implementation of the present invention, preferably, the die pad includes a first die pad and a second die pad, and the first die pad and the second die pad are arranged spaced apart from each other in the second direction.

In the implementation of the present invention, preferably, the support terminal includes a pair of support terminals spaced apart in the first direction, and in the first direction, the pair of support terminals are connected to both ends of the die pad.

In the implementation of the present invention, preferably, the pair of support terminals includes a pair of first support terminals connected to the first die pad and a pair of second support terminals connected to the second die pad, and the pair of first support terminals and the pair of second support terminals are exposed from the pair of first resin side surfaces, respectively.

In the implementation of the present invention, preferably, the semiconductor element includes a control element and a drive element that requires a higher voltage than the control element, and the control element is mounted on the first die pad and the drive element is mounted on the second die pad.

In the implementation of the present invention, preferably, the control element is electrically connected to at least one of the first terminals, and the drive element is electrically connected to at least one of the second terminals.

In the implementation of the present invention, preferably, the control element is electrically connected to at least one of the first support terminals, and the drive element is electrically connected to at least one of the second support terminals.

In the implementation of the present invention, preferably, an insulating element is further provided that is electrically connected to the control element and the drive element, and the insulating element is located between the control element and the drive element in the second direction.

In the implementation of the present invention, preferably, an inductor is formed in the insulating element.

In the implementation of the present invention, the control element, the drive element, and the insulating element preferably have a planar shape that is a long rectangle with the long side extending in the first direction.

In the implementation of the present invention, preferably, the area of the first die pad is larger than the area of the second die pad, and the insulating element is mounted on the first die pad.

In the implementation of the present invention, preferably, a through hole is formed in the first die pad.

In the implementation of the present invention, preferably, in the first die pad, the pair of first support terminals and the through holes are arranged on a straight line along the first direction.

In the implementation of the present invention, the planar shape of the first die pad and the second die pad is preferably a rectangular shape with the long side extending in the first direction.

In the practice of the present invention, preferably, the plurality of first terminals and the pair of first support terminals are each exposed from one of the first resin side surfaces.

In implementing the present invention, preferably, the pair of first support terminals are disposed on both sides of the plurality of first terminals in the first direction.

In the practice of the present invention, preferably, the plurality of second terminals and the pair of second support terminals are each exposed from the other resin first side surface.

In the implementation of the present invention, preferably, the second terminals are arranged on both sides of each of the pair of second support terminals in the first direction.

In the implementation of the present invention, preferably, the second terminals arranged on the outer sides of each of the pair of second support terminals in the first direction are formed with protrusions that protrude toward the second support terminals.

In the implementation of the present invention, preferably, the device further includes a plurality of bonding wires bonded to the control element or the drive element, and some of the plurality of bonding wires are bonded to at least one of the first terminals or the second terminals.

In the implementation of the present invention, preferably, some of the bonding wires are bonded to at least one of the first support terminals or the second support terminals.

In the implementation of the present invention, preferably, some of the bonding wires are bonded to the insulating element.

In the implementation of the present invention, preferably, the multiple bonding wires bonded to the insulating element are arranged along the second direction.

In the implementation of the present invention, preferably, all of the plurality of bonding wires bonded to the insulating element are formed with a first bonding portion bonded to the insulating element.

In the practice of the present invention, the conductive support member is preferably made of an alloy containing Cu.

In the practice of the present invention, the sealing resin is preferably made of an electrically insulating epoxy resin.

In the implementation of the present invention, preferably, the device further includes an interior plating layer having portions formed on the plurality of first terminals, the plurality of second terminals, and the support terminal.

In the practice of the present invention, the interior plating layer preferably consists of Ag.

In the implementation of the present invention, preferably, the plurality of first terminals and the pair of first support terminals, and the plurality of second terminals and the pair of second support terminals, each further include an exterior plating layer formed on a portion exposed from the pair of resin first side surfaces.

In the practice of the present invention, the exterior plating layer is preferably made of an alloy containing Sn.

According to the present invention, the plurality of first terminals and the plurality of second terminals are each exposed from the pair of resin first side surfaces. Furthermore, the die pad, the plurality of first terminals, the plurality of second terminals, and the support terminal that constitute the semiconductor device are all components of the conductive support member. And, the conductive support member, such as an island support, is not exposed from the pair of resin second side surfaces. With this configuration, there is no metal portion of the conductive support member exposed from the sealing resin near the plurality of second terminals to which a higher voltage is applied than the plurality of first terminals. Therefore, it is possible to improve the dielectric strength of the semiconductor device.

Other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

1 is a plan view showing a semiconductor device according to a first embodiment of the present invention; FIG. 2 is a plan view showing the semiconductor device of FIG. 1 (sealing resin is omitted); FIG. 2 is a left side view showing the semiconductor device of FIG. 1 . FIG. 2 is a right side view showing the semiconductor device of FIG. 1 . FIG. 2 is a front view showing the semiconductor device of FIG. 1 . FIG. 2 is a rear view showing the semiconductor device of FIG. 1 . 3 is a cross-sectional view taken along line VII-VII in FIG. 2. 3 is a cross-sectional view taken along line VIII-VIII in FIG. 2. 2 is a plan view showing leads of the semiconductor device of FIG. 1; 2A to 2C are cross-sectional views of a main part showing a manufacturing process of the bonding wire of the semiconductor device of FIG. 1 . 2A to 2C are cross-sectional views of a main part showing a manufacturing process of the bonding wire of the semiconductor device of FIG. 2A to 2C are cross-sectional views of a main part showing a manufacturing process of the bonding wire of the semiconductor device of FIG. 1 . 2A to 2C are cross-sectional views of a main part showing a manufacturing process of the bonding wire of the semiconductor device of FIG. 1 . 2A to 2C are cross-sectional views of a main part showing a manufacturing process of the bonding wire of the semiconductor device of FIG. 1 . FIG. 11 is a plan view showing a semiconductor device according to a second embodiment of the present invention (sealing resin is omitted); 16 is a cross-sectional view taken along line XVI-XVI in FIG. 15. FIG. 13 is a plan view showing a semiconductor device according to a third embodiment of the present invention (sealing resin is omitted); FIG. 18 is a partial enlarged view of the upper right region in FIG. 17 .

An embodiment of a semiconductor device according to the present invention will be described with reference to the attached drawings.

First Embodiment
1 to 12, a semiconductor device A1 according to a first embodiment of the present invention will be described. For convenience of description, the up-down direction in the plan view is defined as a first direction X, and the left-right direction in the plan view, which is perpendicular to the first direction X, is defined as a second direction Y. Both the first direction X and the second direction Y are perpendicular to the thickness direction of the semiconductor device A1.

Figure 1 is a plan view showing the semiconductor device A1. Figure 2 is a plan view in which the sealing resin 6 described later is omitted from Figure 1 for ease of understanding. Figure 3 is a left side view showing the semiconductor device A1. Figure 4 is a right side view showing the semiconductor device A1. Figure 5 is a front view showing the semiconductor device A1. Figure 6 is a rear view showing the semiconductor device A1. Figure 7 is a cross-sectional view taken along line VII-VII (a dashed line) in Figure 2. Figure 8 is a cross-sectional view taken along line VIII-VIII in Figure 2. In Figure 2, the sealing resin 6 is shown by an imaginary line (a dashed line with two dots). In Figures 7 and 8, the sealing resin 6 is not omitted.

The semiconductor device A1 shown in these figures is surface mounted on a circuit board of an inverter device, for example, in an electric vehicle or a hybrid vehicle, and has an SOP package format. The semiconductor device A1 of this embodiment includes a semiconductor element 11, an insulating element 12, a conductive support member 80, a sealing resin 6, a bonding wire 71, an interior plating layer 72, and an exterior plating layer 73. In this embodiment, the semiconductor device A1 is rectangular in plan view.

The semiconductor element 11 and the insulating element 12 are elements for making the semiconductor device A1 function. The semiconductor element 11 includes a control element 111 and a drive element 112. The control element 111 has a circuit for converting a control signal input from the ECU into a PWM control signal, a transmission circuit for transmitting the PWM control signal to the drive element 112, and a receiving circuit for receiving an electrical signal from the drive element 112. The drive element 112 has a receiving circuit for receiving the PWM control signal, a circuit (gate driver) for performing a switching operation of a power semiconductor element such as an IGBT based on the PWM signal, and a transmission circuit for transmitting an electrical signal to the control element 111. The electrical signal may be, for example, an output signal from a temperature sensor arranged near the motor.

The insulating element 12 is an element for transmitting the PWM control signal and other electric signals in an insulated state. The driving element 112 requires a higher voltage than the control element 111, and therefore a significant potential difference occurs between the control element 111 and the driving element 112, and therefore the insulating element 12 is necessary. Specifically, for example, in an inverter device for an electric vehicle or a hybrid vehicle, the power supply voltage supplied to the control element 111 is about 5 V, whereas the power supply voltage supplied to the driving element 112 is about 600 V or more. In this embodiment, the insulating element 12 is an inductor-coupled insulating element. The inductor-coupled insulating element transmits an electric signal in an insulated state by inductively coupling two inductors (coils). The insulating element 12 has a substrate made of Si. An inductor made of Cu is formed on the substrate. The inductor includes a transmitting inductor and a receiving inductor, and these inductors are stacked on top of each other in the thickness direction of the insulating element 12. A dielectric layer made of SiO2 or the like is interposed between the transmitting inductor and the receiving inductor. The transmitting inductor and the receiving inductor are electrically insulated from each other by the dielectric layer.

2, the insulating element 12 is located between the control element 111 and the driving element 112 in the second direction Y. In this embodiment, the planar shapes of the control element 111, the driving element 112, and the insulating element 12 are all rectangular with the long side in the first direction X. The control element 111 and the insulating element 12 are mounted on a first die pad 21 of the die pad 2 described later. The driving element 112 is mounted on a second die pad 22 of the die pad 2 described later. A plurality of pads 111a are formed on the upper surface of the control element 111 (the upper surface of the control element 111 shown in FIG. 7). Similarly, a plurality of pads 112a are formed on the upper surface of the driving element 112 (the upper surface of the driving element 112 shown in FIG. 7), and a plurality of pads 12a are formed on the upper surface of the insulating element 12 (the upper surface of the insulating element 12 shown in FIG. 7).

The conductive support member 80 is a member that carries the semiconductor element 11 and the insulating element 12 in the semiconductor device A1, and that constitutes a conductive path between the semiconductor element 11 and the insulating element 12 and the circuit board of the inverter device. The conductive support member 80 is made of an alloy that contains Cu, for example. The conductive support member 80 is formed from leads 81, which will be described later. The conductive support member 80 includes a die pad 2, a plurality of first terminals 3, a plurality of second terminals 4, and a support terminal 5.

The die pad 2 is a member on which the semiconductor element 11 and the insulating element 12 are mounted. The die pad 2 includes a first die pad 21 and a second die pad 22. As shown in FIG. 2, the first die pad 21 and the second die pad 22 are spaced apart from each other in the second direction Y. In this embodiment, the area of the first die pad 21 is larger than the area of the second die pad 22. In this embodiment, the planar shapes of the first die pad 21 and the second die pad 22 are both elongated rectangles with the long sides extending in the first direction X. As shown in FIGS. 7 and 8, both the first die pad 21 and the second die pad 22 are flat.

As shown in FIG. 7 and FIG. 8, the first die pad 21 has a first die pad upper surface 211 and a first die pad lower surface 212. The first die pad upper surface 211 and the first die pad lower surface 212 face in opposite directions. In this embodiment, an interior plating layer 72 is formed on the first die pad upper surface 211. The control element 111 and the insulating element 12 are each mounted on the interior plating layer 72 formed on the first die pad upper surface 211 by die bonding via a bonding layer (not shown). In addition, the first die pad lower surface 212 is in contact with the sealing resin 6 over the entire surface.

As shown in FIG. 7, the second die pad 22 has a second die pad upper surface 221 and a second die pad lower surface 222. The second die pad upper surface 221 and the second die pad lower surface 222 face in opposite directions. In this embodiment, an interior plating layer 72 is formed on the second die pad upper surface 221. The driving element 112 is mounted on the interior plating layer 72 formed on the second die pad upper surface 221 by die bonding via a bonding layer (not shown). In addition, the second die pad lower surface 222 is in contact with the sealing resin 6 over its entire surface.

As shown in Figures 2 and 7, a sealing resin 6 is interposed between the first die pad 21 and the second die pad 22 in the second direction Y. In this embodiment, as described below, the sealing resin 6 is made of, for example, a black epoxy resin having electrical insulation properties. Therefore, the first die pad 21 and the second die pad 22 are electrically insulated by the insulating element 12 and the sealing resin 6.

The multiple first terminals 3 are members that are joined to the circuit board of the inverter device to form a conductive path between the semiconductor device A1 and the circuit board. As shown in Figures 1 and 3, the multiple first terminals 3 are arranged along the first direction X. Furthermore, the multiple first terminals 3 are exposed so as to extend in the second direction Y from one of the first resin side surfaces 63 of the sealing resin 6 described below. The multiple first terminals 3 include multiple first intermediate terminals 31 and a pair of first side terminals 32.

As shown in Figures 2 and 3, in the first direction X, the multiple first intermediate terminals 31 are arranged between a pair of first side terminals 32. Each of the multiple first intermediate terminals 31 has a lead portion 311 and a pad portion 312.

The lead portion 311 is an elongated rectangular portion extending along the second direction Y, and as shown in FIG. 5 and FIG. 6, the portion exposed from the resin first side surface 63 is bent into a gull-wing shape. Also, as shown in FIG. 7, the exposed portion is formed so as to be covered with an exterior plating layer 73. The portion of the lead portion 311 where the exterior plating layer 73 is not formed is covered with the sealing resin 6. The pad portion 312 is connected to the lead portion 311 and is a rectangular portion that is wider than the lead portion 311 in the first direction X. As shown in FIG. 7, in this embodiment, an interior plating layer 72 is formed on the upper surface of the pad portion 312. The pad portion 312 is covered with the sealing resin 6 over the entire surface. Also, the pad portion 312 is flat.

As shown in Figures 2 and 3, in the first direction X, a pair of first side terminals 32 are arranged on both sides of the multiple first intermediate terminals 31. Each of the pair of first side terminals 32 has a lead portion 321 and a pad portion 322.

The lead portion 321 is an elongated rectangular portion extending along the second direction Y, and as shown in FIG. 5 and FIG. 6, the portion exposed from the resin first side surface 63 is bent into a gull-wing shape. Also, like the lead portion 311 of the first intermediate terminal 31, the exposed portion is formed so as to be covered with an exterior plating layer 73. The portion of the lead portion 321 where the exterior plating layer 73 is not formed is covered with the sealing resin 6. The pad portion 322 is connected to the lead portion 321 and is wider than the lead portion 321 in the first direction X. In this embodiment, like the pad portion 312 of the first intermediate terminal 31, the interior plating layer 72 is formed on the upper surface of the pad portion 322 (the surface facing in the same direction as the first die pad upper surface 211 in FIG. 7). The pad portion 322 is covered with the sealing resin 6 over the entire surface. Also, the pad portion 322 is flat.

The second terminals 4, like the first terminals 3, are members that are joined to the circuit board of the inverter device to form a conductive path between the semiconductor device A1 and the circuit board. As shown in Figs. 1 and 4, the second terminals 4 are arranged along the first direction X. As shown in Fig. 2, the second terminals 4 are located on the opposite side of the first terminals 3 in the second direction Y, sandwiching the semiconductor element 11 therebetween. The second terminals 4 are exposed so as to extend in the second direction Y from the other first resin side surface 63 of the sealing resin 6 described later. The second terminals 4 include a plurality of second intermediate terminals 41 and a pair of second side terminals 42.

2 and 4, in the first direction X, the second intermediate terminals 41 are arranged between a pair of second side terminals 42. Furthermore, in the first direction X, the second intermediate terminals 41 are arranged between a pair of second support terminals 52 of the support terminal 5 described below. Each of the second intermediate terminals 41 has a lead portion 411 and a pad portion 412.

The lead portion 411 is an elongated rectangular portion extending along the second direction Y, and as shown in FIG. 5 and FIG. 6, the portion exposed from the other resin first side surface 63 is bent into a gull-wing shape. Also, as shown in FIG. 7, the exposed portion is formed so as to be covered with an exterior plating layer 73. The portion of the lead portion 411 where the exterior plating layer 73 is not formed is covered with the sealing resin 6. The pad portion 412 is connected to the lead portion 411 and is a rectangular portion wider than the lead portion 411 in the first direction X. As shown in FIG. 7, in this embodiment, the interior plating layer 72 is formed on the upper surface of the pad portion 412 (the upper surface of the pad portion 412 shown in FIG. 7). The pad portion 412 is covered with the sealing resin 6 over the entire surface. Also, the pad portion 412 is flat. In this embodiment, the shape of the second terminal 4 is the same as the shape of the first terminal 3.

2 and 4, in the first direction X, a pair of second side terminals 42 are arranged on both sides of the plurality of second side terminals 42. Each of the pair of second side terminals 42 has a lead portion 421 and a pad portion 422.

The lead portion 421 is an elongated rectangular portion extending along the second direction Y, and as shown in FIG. 5 and FIG. 6, the portion exposed from the other resin first side surface 63 is bent into a gull-wing shape. Also, like the lead portion 411 of the second intermediate terminal 41, the exposed portion is formed so as to be covered with the exterior plating layer 73. The portion of the lead portion 421 where the exterior plating layer 73 is not formed is covered with the sealing resin 6. Also, the length of the portion of the lead portion 421 covered with the sealing resin 6 is longer than the length of the corresponding portion of the lead portion 411 of the second intermediate terminal 41. The pad portion 422 is connected to the lead portion 421 and extends in the first direction X. As shown in FIG. 2, the end of the pad portion 422 is separated from the second die pad 22. In this embodiment, like the pad portion 412 of the second intermediate terminal 41, an interior plating layer 72 is formed on the upper surface of the pad portion 422 (the surface facing in the same direction as the second die pad upper surface 221 in FIG. 7). The pad portion 422 is covered over its entire surface with the sealing resin 6. The pad portion 422 is also flat.

The support terminal 5 is connected to the die pad 2. The support terminal 5 is a member that supports the die pad 2 and, like the multiple first terminals 3 and the multiple second terminals 4, is joined to the circuit board of the inverter device to form a conductive path between the semiconductor device A1 and the circuit board. The support terminal 5 includes one that is composed of a pair of members, and further includes a pair of first support terminals 51 and a pair of second support terminals 52. As shown in FIG. 2, the pair of first support terminals 51 are arranged at a distance in the first direction X and are connected to both ends of the first die pad 21. In addition, the pair of second support terminals 52 are arranged at a distance in the first direction X and are connected to both ends of the second die pad 22.

2 and 3, in the first direction X, the pair of first support terminals 51 are arranged on both sides of the multiple first terminals 3. The pair of first support terminals 51 are exposed so as to extend in the second direction Y from the one of the first resin side surfaces 63 on which the multiple first terminals 3 are exposed. Each of the pair of first support terminals 51 has a lead portion 511 and a pad portion 512.

The lead portion 511 is an elongated rectangular portion extending along the second direction Y, and as shown in FIG. 5 and FIG. 6, the portion exposed from the resin first side surface 63 is bent into a gull-wing shape. Also, like the lead portion 311 of the first intermediate terminal 31, the exposed portion is formed so as to be covered with an exterior plating layer 73. The portion of the lead portion 511 where the exterior plating layer 73 is not formed is covered with the sealing resin 6. Also, the length of the portion of the lead portion 511 covered with the sealing resin 6 is longer than the length of the corresponding portion of the lead portion 311 of the first intermediate terminal 31 or the lead portion 311 of the first side terminal 32. The pad portion 512 is a portion connected to the lead portion 511 and extends in the first direction X. As shown in FIG. 2, the end of the pad portion 512 is connected to the first die pad 21. As shown in FIG. 8, in this embodiment, like the pad portion 312 of the first intermediate terminal 31, an interior plating layer 72 is formed on the upper surface of the pad portion 512. The entire surface of the pad portion 512 is covered with sealing resin 6. The pad portion 512 is also flat.

2 and 4, in the first direction X, a plurality of second intermediate terminals 41 are arranged inside the pair of second support terminals 52. In addition, in the first direction X, the second side terminals 42 are arranged outside the pair of second support terminals 52. Therefore, the second terminals 4 are arranged on both sides of each of the pair of second support terminals 52. The pair of second support terminals 52 are each exposed so as to extend in the second direction Y from the other resin first side surface 63 on which the plurality of second terminals 4 are exposed. Each of the pair of second support terminals 52 has a lead portion 521, a pad portion 522, and a connecting portion 524.

The lead portion 521 is an elongated rectangular portion extending along the second direction Y, and as shown in FIG. 5 and FIG. 6, the portion exposed from the other resin first side surface 63 is bent into a gull-wing shape. Also, like the lead portion 411 of the second intermediate terminal 41, the exposed portion is formed so as to be covered with an exterior plating layer 73. The portion of the lead portion 521 where the exterior plating layer 73 is not formed is covered with the sealing resin 6. The pad portion 522 is connected to the lead portion 521 and is wider than the lead portion 521 in the first direction X. The pad portion 522 extends in the second direction Y. In this embodiment, like the pad portion 412 of the second intermediate terminal 41, the interior plating layer 72 is formed on the upper surface of the pad portion 522 (the surface facing in the same direction as the second die pad upper surface 221 in FIG. 7). The pad portion 522 is covered with the sealing resin 6 over the entire surface. Additionally, the pad portion 522 is flat. The connecting portion 524 is a portion that is connected to the pad portion 522 and extends in the first direction X. As shown in FIG. 2, an end of the connecting portion 524 is connected to the second die pad 22. In this embodiment, similar to the pad portion 522, an interior plating layer 72 is formed on the upper surface of the connecting portion 524 (the surface facing in the same direction as the upper surface of the pad portion 522). The connecting portion 524 is covered entirely with the sealing resin 6.

Figure 9 is a plan view showing the lead 81 of the semiconductor device A1. In Figure 9, the region where the sealing resin 6 is formed is shown by an imaginary line (two-dot chain line). Also, the region where the interior plating layer 72 is formed is shown by a shaded area.

The conductive support member 80 described above is formed from a lead 81. In the manufacturing process of the semiconductor device A1, the die pad 2, the multiple first terminals 3, the multiple second terminals 4, and the support terminal 5 are all formed from the same lead 81. The lead 81 is made of an alloy containing Cu, for example. The lead 81 has an outer frame 811, an island portion 812, multiple first leads 813, multiple second leads 814, a support lead 815, and a dam bar 816. Of these, the outer frame 811 and the dam bar 816 do not constitute the semiconductor device A1. The lead 81 will be described below with reference to FIG. 9.

The outer frame 811 is a member formed to surround the island portion 812, the multiple first leads 813, the multiple second leads 814, the support lead 815, and the dam bar 816. The multiple first leads 813, the multiple second leads 814, and the support lead 815 are each connected along the first direction X of the outer frame 811. In addition, the dam bar 816 is connected along the second direction Y of the outer frame 811.

The island portion 812 is an elongated rectangular member with its long side extending in the first direction X in a plan view. The island portion 812 corresponds to the die pad 2. The island portion 812 is supported by the outer frame 811 via the support leads 815. The island portion 812 includes a first island portion 812a and a second island portion 812b. The first island portion 812a corresponds to the first die pad 21, and the second island portion 812b corresponds to the second die pad 22. The first island portion 812a and the second island portion 812b are disposed at a distance from each other.

The multiple first leads 813 are arranged along the first direction X, and each extends in the second direction Y. The multiple first leads 813 correspond to multiple first terminals 3. One end of each of the first leads 813 is connected to the outer frame 811. The multiple first leads 813 include multiple first intermediate leads 813a and a pair of first side leads 813b. The first intermediate lead 813a corresponds to the first intermediate terminal 31, and the first side lead 813b corresponds to the first side terminal 32.

The second leads 814 are arranged along the first direction X and each extends in the second direction Y. The second leads 814 are located on opposite sides of the island portion 812 in the second direction Y. The second leads 814 correspond to the second terminals 4. One end of each of the second leads 814 is connected to the outer frame 811. The second leads 814 include second intermediate leads 814a and a pair of second side leads 814b. The second intermediate lead 814a corresponds to the second intermediate terminal 41, and the second side lead 814b corresponds to the second side terminal 42.

The support lead 815 is a member that extends in the second direction Y, has one end connected to the outer frame 811, and the other end connected to the island portion 812. The support lead 815 corresponds to the support terminal 5. The support lead 815 includes a pair of first support leads 815a and a pair of second support leads 815b. The first support lead 815a corresponds to the first support terminal 51, and the second support lead 815b corresponds to the second support terminal 52. The pair of first support leads 815a are spaced apart in the first direction X, and are connected to both ends of the first island portion 812a. The pair of second support leads 815b are spaced apart in the first direction X, and are connected to both ends of the second island portion 812b.

The dam bars 816 are a pair of members that extend in the first direction X and have both ends connected to the outer frame 811. The dam bars 816 support the first leads 813, the second leads 814, and the support leads 815 in the first direction X, and also function to hold back the molten synthetic resin during the formation of the sealing resin 6. One dam bar 816 is connected to the first intermediate leads 813a, a pair of first side leads 813b, and a pair of first support leads 815a. The other dam bar 816 is connected to the second intermediate leads 814a, a pair of second side leads 814b, and a pair of second support leads 815b.

The sealing resin 6 is made of, for example, black epoxy resin having electrical insulation properties. The sealing resin 6 covers a portion of each of the multiple first terminals 3, the multiple second terminals 4, and the support terminal 5, as well as the semiconductor element 11, the insulating element 12, the die pad 2, the bonding wires 71, and the interior plating layer 72. The sealing resin 6 is formed by transfer molding using a mold. The sealing resin 6 has a resin upper surface 61, a resin lower surface 62, a pair of resin first side surfaces 63, and a pair of resin second side surfaces 64.

As shown in Figures 3 to 6, the resin upper surface 61 is a surface facing upward. The resin lower surface 62 is a surface facing downward. The resin upper surface 61 and the resin lower surface 62 face in opposite directions. Both the resin upper surface 61 and the resin lower surface 62 are flat.

As shown in Figures 1 and 2, the pair of resin first side surfaces 63 are formed spaced apart in the second direction Y. The pair of resin first side surfaces 63 face opposite each other. In this embodiment, a plurality of first terminals 3 and a pair of first support terminals 51 are exposed from one of the resin first side surfaces 63. Also, a plurality of second terminals 4 and a pair of second support terminals 52 are exposed from the other resin first side surface 63. Each of the pair of resin first side surfaces 63 has a resin first side surface upper portion 631, a resin first side surface central portion 632, and a resin first side surface lower portion 633.

As shown in Figures 3 to 6, the upper end of the resin first side surface upper portion 631 is connected to the resin upper surface 61 and the lower end is connected to the resin first side surface central portion 632. The resin first side surface upper portion 631 is inclined so that its upper end is located on the inner side of the semiconductor device A1.

As shown in Figures 3 to 6, the resin first side center portion 632 is a portion whose upper end is connected to the resin first side upper portion 631 and whose lower end is connected to the resin first side lower portion 633. The resin first side center portion 632 is perpendicular to the resin upper surface 61 and the resin lower surface 62. A plurality of first terminals 3 and a pair of first support terminals 51 are exposed from one of the resin first side center portions 632. A plurality of second terminals 4 and a pair of second support terminals 52 are exposed from the other resin first side center portion 632.

As shown in Figures 3 to 6, the resin first side lower portion 633 is a portion whose upper end is connected to the resin first side central portion 632 and whose lower end is connected to the resin lower surface 62. The resin first side lower portion 633 is inclined so that its lower end is located on the inner side of the semiconductor device A1.

As shown in Figures 1 and 2, the pair of resin second side surfaces 64 are formed spaced apart in the first direction X. The pair of resin second side surfaces 64 face opposite each other. As shown in Figures 2, 5, and 6, in this embodiment, the conductive support member 80 is not exposed from the pair of resin second side surfaces 64. Each of the pair of resin second side surfaces 64 has a resin second side surface upper portion 641, a resin second side surface central portion 642, and a resin second side surface lower portion 643.

As shown in Figures 3 to 6, the upper end of the resin second side surface upper portion 641 is connected to the resin upper surface 61 and the lower end is connected to the resin second side surface central portion 642. The resin second side surface upper portion 641 is inclined so that its upper end is located on the inner side of the semiconductor device A1.

As shown in Figures 3 to 6, the resin second side center portion 642 is a portion whose upper end is connected to the resin second side upper portion 641 and whose lower end is connected to the resin second side lower portion 643. The resin second side center portion 642 is perpendicular to the resin upper surface 61 and the resin lower surface 62, and is perpendicular to the resin first side center portion 632. In this embodiment, in the thickness direction of the semiconductor device A1, the height of the resin second side center portion 642 and the height of the resin first side center portion 632 are approximately the same.

As shown in Figures 3 to 6, the upper end of the resin second side lower portion 643 is connected to the resin second side central portion 642, and the lower end is connected to the resin lower surface 62. The resin second side lower portion 643 is inclined so that its lower end is located on the inner side of the semiconductor device A1.

The multiple bonding wires 71, together with the multiple first terminals 3, multiple second terminals 4, and support terminal 5 described above, form a conductive path within the semiconductor device A1 for the semiconductor element 11 and insulating element 12 to perform a predetermined function. The multiple bonding wires 71 include multiple first bonding wires 711, multiple second bonding wires 712, multiple third bonding wires 713, and multiple fourth bonding wires 714.

As shown in FIG. 2, the multiple first bonding wires 711 form a conductive path between the control element 111 and the multiple first terminals 3 and the pair of first support terminals 51. The multiple first bonding wires 711 allow the control element 111 to be electrically connected to at least one of the first terminals 3 and the first support terminals 51. The multiple first bonding wires 711 are each bonded to the pad 111a of the control element 111 and the pad portion 312 of the first intermediate terminal 31, the pad portion 322 of the first side terminal 32, or the pad portion 512 of the first support terminal 51.

2, the multiple second bonding wires 712 form a conductive path between the insulating element 12 and the control element 111. The multiple second bonding wires 712 allow the insulating element 12 and the control element 111 to be conductive with each other. The multiple second bonding wires 712 are bonded to the pad 12a of the insulating element 12 and the pad 111a of the control element 111, respectively. In this embodiment, the multiple second bonding wires 712 are arranged along the second direction Y.

As shown in FIG. 2, the multiple third bonding wires 713 form a conductive path between the insulating element 12 and the driving element 112. The multiple third bonding wires 713 allow the insulating element 12 and the driving element 112 to be electrically connected to each other. The multiple third bonding wires 713 are bonded to the pad 12a of the insulating element 12 and the pad 112a of the driving element 112, respectively. In this embodiment, the multiple third bonding wires 713 are arranged along the second direction Y.

2, the multiple fourth bonding wires 714 form a conductive path between the driving element 112 and the multiple second terminals 4 and the pair of second support terminals 52. The multiple fourth bonding wires 714 connect the driving element 112 to at least one of the second terminals 4 and the second support terminals 52. The multiple fourth bonding wires 714 are each bonded to the pad 112a of the driving element 112 and the pad portion 412 of the second intermediate terminal 41, the pad portion 422 of the second side terminal 42, or the pad portion 522 of the second support terminal 52.

Figures 10 to 14 are cross-sectional views of the essential parts showing the wire bonding of the bonding wire 71 of the semiconductor device A1.

All of the multiple second bonding wires 712 and third bonding wires 713 bonded to the insulating element 12 have first bonding portions 712a and 713a bonded to the insulating element 12. The wire bonding process of the second bonding wires 712 and the third bonding wires 713 will be described with reference to Figures 10 to 14.

As shown in FIG. 10, the capillary 88 is lowered toward the insulating element 12, and the tip of the wire 871 is pressed against the pad 12a of the insulating element 12. At this time, the tip of the wire 871 is pressed against the pad 12a by the weight of the capillary 88 and the action of ultrasonic waves emitted from the capillary 88. The capillary 88 is cylindrical with a through hole, and its tip is configured with a gently curved surface. The wire 871 that becomes the bonding wire 71 is sent out from the capillary 88 so that it can move forward and backward. Next, as shown in FIG. 11, the capillary 88 is raised while sending out the wire 871, so that the first bonding portion 712a of the second bonding wire 712 is formed on the pad 12a. The first bonding portion 713a of the third bonding wire 713 is formed in the same manner.

Next, as shown in FIG. 12, the capillary 88 is moved directly above the pad 111a of the control element 111, and the capillary 88 is further lowered to press the tip of the capillary 88 against the pad 111a. At this time, the wire 871 is sandwiched between the tip of the capillary 88 and the pad 111a, and a part of the wire 871 is attached to the tip of the capillary 88. Next, as shown in FIG. 13, the capillary 88 is raised, so that the wire 871 is cut and the second bonding portion 712b of the second bonding wire 712 is formed on the pad 111a. Through the above process, the second bonding wire 712 bonded to the insulating element 12 and the control element 111 is formed.

As shown in FIG. 14, when forming the second bonding portion 713b of the third bonding wire 713, the tip of the capillary 88 is pressed against the pad 112a of the driving element 112. At this time, the wire 871 is sandwiched between the tip of the capillary 88 and the pad 112a. This tip is located on the opposite side of the wire 871 from the tip of the capillary 88 when the second bonding wire 712 is formed. By performing this wire bonding process, it is possible to suppress bias of the wire 871 attached to the tip of the capillary 88, which is an obstruction to wire bonding.

The interior plating layer 72 has portions formed on the first terminals 3, the second terminals 4, and the support terminal 5. Specific portions are shown in the description of the first terminals 3, the second terminals 4, and the support terminal 5 described above. In this embodiment, the interior plating layer 72 is also formed on the first die pad upper surface 211 of the first die pad 21 and the second die pad upper surface 221 of the second die pad 22. As shown in FIG. 9, the interior plating layer 72 is formed in the area indicated by the hatched portion in the lead 81. The interior plating layer 72 functions to protect the lead 81 from impact during wire bonding. The interior plating layer 72 is made of, for example, Ag.

The exterior plating layer 73 is formed on the portions of the multiple first terminals 3 and the pair of first support terminals 51, and the multiple second terminals 4 and the pair of second support terminals 52 that are exposed from the pair of resin first side surfaces 63. When the semiconductor device A1 is surface-mounted on the circuit board of the inverter device by soldering, the exterior plating layer 73 improves the adhesion of solder to the exposed portions while preventing erosion of the exposed portions due to soldering. The exterior plating layer 73 is made of an alloy containing Sn, such as solder.

Next, the effects of the semiconductor device A1 will be described.

According to this embodiment, the first terminals 3 and the second terminals 4 are exposed from the pair of resin first side surfaces 63. The die pad 2, the first terminals 3, the second terminals 4, and the support terminal 5 constituting the semiconductor device A1 are all components of the conductive support member 80. The conductive support member 80, such as the island support, is not exposed from the pair of resin second side surfaces 64. With this configuration, the metal portion of the conductive support member 80 exposed from the sealing resin 6 does not exist near the second terminals 4 to which a higher voltage is applied than the first terminals 3. Therefore, it is possible to improve the dielectric strength of the semiconductor device A1.

The multiple second bonding wires 712 and third bonding wires 713 bonded to the insulating element 12 are arranged along the second direction Y. For example, when the semiconductor device A1 is mounted on an inverter device of an electric vehicle or a hybrid vehicle, the voltage applied to the multiple second bonding wires 712 is about 5 V, whereas the voltage applied to the multiple third bonding wires 713 is about 600 V or more. Therefore, such an arrangement of the multiple second bonding wires 712 and third bonding wires 713 is preferable from the viewpoint of improving the dielectric strength voltage of the semiconductor device A1.

In order to improve the dielectric strength of the semiconductor device A1, the distance between the first terminals 3 and the second terminals 4 tends to be longer. Therefore, by making the first direction X the longer side of the planar shapes of the semiconductor element 11, the insulating element 12, and the die pad 2, it is possible to prevent the semiconductor device A1 from becoming larger.

The first die pad 21 and the second die pad 22 are supported at both ends by a pair of first support terminals 51 and second support terminals 52, respectively, at approximately the center in the second direction Y. When the sealing resin 6 is formed, the molten resin injected into the mold comes into contact with the die pad 2, causing the die pad 2 to be displaced in the thickness direction of the semiconductor device A1. Therefore, by adopting such a configuration, it is possible to suppress the displacement and avoid defects in the semiconductor device A1.

When forming the sealing resin 6, molten resin is generally injected into the mold from the corners of the leads 81. According to this embodiment, the conductive support member 80 such as the island support is not exposed from the pair of resin second side surfaces 64. With this configuration, the molten resin can be injected from the center in the second direction Y, which prevents voids from occurring in the sealing resin 6.

Figures 15 to 18 show another embodiment of the present invention. In these figures, elements that are the same as or similar to the semiconductor device A1 described above are given the same reference numerals, and duplicate explanations will be omitted.

Second Embodiment
A semiconductor device A2 according to a second embodiment of the present invention will be described with reference to FIGS.

Figure 15 is a plan view showing semiconductor device A2 with the sealing resin 6 omitted for ease of understanding. Figure 16 is a cross-sectional view taken along line XVI-XVI (dash line) in Figure 15. Note that in Figure 15, the sealing resin 6 is shown by an imaginary line (dash line with two dots). In Figure 16, the sealing resin 6 is not omitted. In this embodiment, semiconductor device A2 is rectangular in plan view.

The semiconductor device A2 of this embodiment differs from the semiconductor device A1 described above in the shape of the first die pad 21. As shown in FIG. 15 and FIG. 16, the first die pad 21 has a through hole 213 formed therein. In this embodiment, the through hole 213 is formed in three places in the region of the first die pad 21 located between the control element 111 and the insulating element 12. Each of the through holes 213 is an elongated hole extending in the first direction X. The number and planar shape of the through holes 213 can be freely set. As shown in FIG. 15, in the first die pad 21, the pair of first support terminals 51 and the through hole 213 are arranged on a straight line N (a dashed line) along the first direction X.

This embodiment also makes it possible to improve the dielectric strength of the semiconductor device A2. Furthermore, according to this embodiment, a through hole 213 is formed in the first die pad 21. Since the area of the first die pad 21 is larger than the area of the second die pad 22, when the sealing resin 6 is formed, voids are likely to occur in the portion of the sealing resin 6 located near the first die pad 21. Therefore, by forming the through hole 213 in the first die pad 21, the molten resin injected into the mold when forming the sealing resin 6 is sufficiently filled, and the occurrence of voids in the sealing resin 6 can be further suppressed.

Third Embodiment
A semiconductor device A3 according to a third embodiment of the present invention will be described with reference to FIGS.

Figure 17 is a plan view showing the semiconductor device A3 with the sealing resin 6 omitted for ease of understanding. Figure 18 is a partial enlarged view of the upper right region in Figure 17. Note that in Figures 17 and 18, the sealing resin 6 is shown by an imaginary line (two-dot chain line). Also, in Figure 18, an imaginary line (two-dot chain line) shows a state when a pull-out force in the second direction Y acts on the second support terminal 52 and the second die pad 22 tries to come out of the sealing resin 6. In this embodiment, the semiconductor device A3 is rectangular in plan view.

In the semiconductor device A3 of this embodiment, the shape of the pair of second side terminals 42 and the shape of the pair of first support terminals 51 are different from those of the semiconductor devices A1 and A2 described above. As shown in FIG. 17 and FIG. 18, the second terminals 4 arranged on the outer sides of the pair of second support terminals 52 in the first direction X, that is, the pair of second side terminals 42, are each formed with a protrusion 423 protruding toward the second support terminal 52. In this embodiment, the planar shape of the protrusion 423 is a trapezoid. Note that the planar shape of the protrusion 423 can be any shape, such as a rectangle. Due to the nature of the processing of the lead 81, the pair of first support terminals 51 are also each formed with a protrusion 513 protruding toward the first side terminal 32.

This embodiment also makes it possible to improve the dielectric strength of the semiconductor device A3. In addition, according to this embodiment, the pair of second side terminals 42 each have a protrusion 423 formed thereon. Since the area of the second die pad 22 is smaller than the area of the first die pad 21, the bonding force between the second die pad 22 and the sealing resin 6 is smaller than the bonding force between the first die pad 21 and the sealing resin 6. Therefore, when cutting the leads 81 to separate them after forming the sealing resin 6, the second die pad 22 may come out of the sealing resin 6 due to the pull-out force in the second direction Y acting on the second support terminal 52. As shown in FIG. 18, the protrusion 423 protrudes in a direction (first direction X) perpendicular to the direction (second direction Y) of the pull-out force acting on the pair of second support terminals 52. Therefore, when the pull-out force acts on the second support terminal 52 and the second die pad 22 tries to come out of the sealing resin 6, the second support terminal 52 receives a reaction force from the protrusion 423. This makes it possible to prevent the second die pad 22 from coming out of the sealing resin 6.

The semiconductor device according to the present invention is not limited to the above-mentioned embodiment. The specific configuration of each part of the semiconductor device according to the present invention can be freely designed in various ways.

A1, A2, A3: Semiconductor device 11: Semiconductor element 111: Control element 111a: Pad 112: Drive element 112a: Pad 12: Insulation element 12a: Pad 2: Die pad 21: First die pad 211: First die pad upper surface 212: First die pad lower surface 213: Through hole 22: Second die pad 221: Second die pad upper surface 222: Second die pad lower surface 3: First terminal 31: First intermediate terminal 311: Lead portion 312: Pad portion 32: First side terminal 321: Lead portion 322: Pad portion 4: Second terminal 41: Second intermediate terminal 411: Lead portion 412: Pad portion 42: Second side terminal 421: Lead portion 422: Pad portion 423: Protrusion portion 5: Support terminal 51: First support terminal 511: Lead portion 512: Pad portion 513: Protrusion portion 52: Second support terminal 521: Lead portion 522: Pad portion 524: Connection portion 6: Sealing resin 61: Resin upper surface 62: Resin lower surface 63: Resin first side surface 631: Resin first side upper portion 632: Resin first side central portion 633: Resin first side lower portion 64: Resin second side surface 641: Resin second side upper portion 642: Resin second side central portion 643: Resin second side lower portion 71: Bonding wire 711: First bonding wire 712: Second bonding wire 712a: First bonding portion 712b: Second bonding portion 713: Third bonding wire 713a: First bonding portion 713b: Second bonding portion 714: Fourth bonding wire 72: Interior plating layer 73: Exterior plating layer 80: Conductive support member 81: Lead 811: Outer frame 812: Island portion 812a: First island portion 812b: Second island portion 813: First lead 813a: First intermediate lead 813b: First side lead 814: Second lead 814a: Second intermediate lead 814b: Second side lead 815: Support lead 815a: First support lead 815b: Second support lead 816: Dam bar 871: Wire 88: Capillary X: First direction Y: Second direction N: Straight line

Claims (11)

a first lead including a first die pad;
a second lead including a second die pad spaced from the first die pad in a first direction;
a first semiconductor element mounted on the first die pad, the first semiconductor element having a first edge extending in a second direction perpendicular to the first direction in a plan view and a second edge extending in the first direction in a plan view and shorter than the first edge ;
an insulating element mounted on the first die pad;
a second semiconductor element mounted on the second die pad, the second semiconductor element having a third edge extending in the second direction in a plan view and a fourth edge extending in the first direction in a plan view and being shorter than the third edge ;
a first wire connected to the insulating element and the first semiconductor element;
a second wire connected to the insulating element and the second semiconductor element;
the first lead includes two first support terminals each having a first section extending in the first direction and connected to both sides of the first die pad in the second direction, and a first intermediate terminal located between the first sections of the two first support terminals on an opposite side of the first die pad to the second die pad in the first direction with respect to the first die pad, and spaced apart from the first die pad;
each of the two first support terminals has a first connecting edge and a second connecting edge that are bent from the first section to reach the first die pad in a plan view;
In a plan view, the second connecting edge is located on an opposite side to a side on which the first intermediate terminal is located with respect to the first connecting edge,
the first connecting edge and the second connecting edge extend from the first section toward the first die pad in the same direction;
the second lead includes two second support terminals each having a second section extending in the first direction and connected to both sides of the second die pad in the second direction, and a second intermediate terminal located between the second sections of the two second support terminals on a side opposite to the first die pad with respect to the second die pad in the first direction and spaced apart from the second die pad,
each of the two second support terminals has a third connecting edge and a fourth connecting edge that are bent from the second section to reach the second die pad in a plan view;
the fourth connecting edge is located on an opposite side to a side on which the second intermediate terminal is located with respect to the third connecting edge in a plan view,
the third connecting edge and the fourth connecting edge extend from the second section toward the second die pad in the same direction;
a third wire connected to the first semiconductor element and the first lead and crossing the second edge in a plan view;
a fourth wire connected to the first semiconductor element and the first intermediate terminal and crossing the first edge in a plan view;
the semiconductor device further comprising : a fifth wire connected to the second semiconductor element and the second intermediate terminal and crossing the third edge in a plan view. two first side terminals located on both sides of the first intermediate terminal in the second direction and between the first sections of the two first support terminals;
The semiconductor device according to claim 1 , further comprising: a sixth wire connected to said first semiconductor element and one of said two first side terminals . The semiconductor device according to claim 2 , further comprising a seventh wire connected to said second semiconductor element and one of said two second support terminals . The semiconductor device according to claim 1 , further comprising a third lead electrically connected to either said first semiconductor element or said second semiconductor element . 5 . The semiconductor device according to claim 4 , wherein the third lead is located between the first sections of the two first support terminals or between the second sections of the two second support terminals . 6. The semiconductor device according to claim 1, wherein the first die pad and the second die pad are disposed on the same plane . 7. The semiconductor device according to claim 1 , further comprising a sealing resin that covers said first semiconductor element, said second semiconductor element, and said insulating element . each of the two first support terminals, the first intermediate terminal, each of the two second support terminals, and the second intermediate terminal includes a portion protruding from the sealing resin;
When viewed in the second direction, each of the two first support terminals is bent so as to overlap the first intermediate terminal,
The semiconductor device according to claim 7 , wherein each of the two second support terminals is bent so as to overlap the second intermediate terminal when viewed in the second direction . The semiconductor device according to claim 7 , wherein the first die pad is provided with a plurality of through holes . 10. The semiconductor device according to claim 9, wherein each of said plurality of through holes is an elongated hole extending in a predetermined direction . 11. The semiconductor device according to claim 1, wherein the composition of each of the first lead and the second lead includes copper .

Images