JP7615490B2 - Method for manufacturing switch device, method for manufacturing electrical component, and switch device - Google Patents

Description

The present invention relates to a method for manufacturing a switch device, a method for manufacturing an electrical component, and a switch device.

The following Patent Document 1 discloses a technique for pre-plating the terminal surfaces of flat-type batteries to which the batteries are soldered.

Special Publication No. 6-80584

Conventionally, a method for forming a spare solder layer on a terminal surface involves melting a solder sheet placed on the terminal surface by reflow. However, the inventors of the present invention have found that when a spare solder layer is formed on a terminal surface using this method, there is a risk of the spare solder layer being poorly formed.

A method for manufacturing a switch device according to one embodiment is a method for manufacturing a switch device having a fixed contact provided within a housing, a terminal surface extending from the fixed contact to the outside of the housing, and a movable contact that moves toward and away from the fixed contact, and includes a gold plating layer forming step of forming a first gold plating layer on the terminal surface, a solder sheet placing step of placing a solder sheet on the surface of the first gold plating layer, and a preliminary solder layer forming step of forming a preliminary solder layer on the terminal surface by melting the solder sheet, and the ratio of the thickness of the first gold plating layer to the thickness of the solder sheet is 0.01 to 0.08:25.

The manufacturing method for a switch device according to one embodiment can prevent poor formation of a spare solder layer on the terminal surface.

FIG. 1 is an external perspective view of a switch device according to an embodiment; FIG. 1 is an external perspective view of a switch device according to an embodiment; FIG. 1 is an exploded perspective view of a switch device according to an embodiment; FIG. 1 is an exploded perspective view of a switch device according to an embodiment; 1 is a cross-sectional view of a switch device according to an embodiment taken along line AA. FIG. 2 is an external perspective view of a first metal terminal member and a second metal terminal member included in the switch device according to the embodiment; FIG. 2 is an external perspective view of a first metal terminal member and a second metal terminal member included in the switch device according to the embodiment; A flowchart showing the steps of a method for manufacturing a switch device according to an embodiment. FIG. 1 is a diagram showing an example of a region where a gold plating layer and a spare solder layer are formed on the lower surface of a first metal terminal member and a second metal terminal member included in a switch device according to an embodiment; FIG. 2 is a diagram showing an example of a region where a gold plating layer is formed on the upper surface of a first metal terminal member and a second metal terminal member included in the switch device according to the embodiment; FIG. 1 is a diagram showing an example of a stacked structure of a first terminal surface and a second terminal surface in a switch device according to an embodiment; FIG. 1 shows implementation conditions and implementation results of an embodiment.

Below, one embodiment will be described with reference to the drawings.

(Configuration of Switch Device 100)
Figures 1 and 2 are external perspective views of a switch device 100 according to an embodiment. Figures 3 and 4 are exploded perspective views of the switch device 100 according to an embodiment. Figure 5 is a cross-sectional view of the switch device 100 according to an embodiment taken along the line A-A (see Figure 1). Figures 6 and 7 are external perspective views of a first metal terminal member 151 and a second metal terminal member 152 included in the switch device 100 according to an embodiment.

The switch device 100 shown in FIG. 1 is a device that is mounted on a conductive path on a circuit board and can be manually switched between an on state and an off state to switch the conductive path on the circuit board between a connected state and a disconnected state.

As shown in Figures 1 to 4, the switch device 100 includes a housing 110, a first metal terminal member 151, a second metal terminal member 152, a stem 130, a metal contact 140, and a frame 120.

The housing 110 is a container-like member made of resin and having a rectangular parallelepiped shape. A recess 110A is formed in the center of the housing 110, recessed downward from the top surface of the housing 110. The recess 110A has a circular shape in a plan view. A first fixed contact 151A is exposed in the center of the inner bottom surface of the recess 110A. A pair of second fixed contacts 152A are exposed on the outer periphery of the inner bottom surface of the recess 110A, sandwiching the first fixed contact 151A therebetween.

A pair of first terminal surfaces 151B for connecting the first fixed contacts 151A to the outside is provided on the bottom surface of the housing 110. The pair of first terminal surfaces 151B are integrally formed with the first fixed contacts 151A by a first metal terminal member 151 that is integrated with the housing 110 by insert molding.

The bottom surface of the housing 110 is provided with a pair of second terminal surfaces 152B for connecting the pair of second fixed contacts 152A to the outside. The pair of second terminal surfaces 152B are integrally formed with the pair of second fixed contacts 152A by a second metal terminal member 152 that is integrated with the housing 110 by insert molding.

The first terminal surface 151B and the second terminal surface 152B are both smooth and planar, and have a rectangular shape in a plan view.

The stem 130 is a disk-shaped member made of resin that is pressed downward by the operator. The stem 130 is disposed above the metal contact 140 in the recess 110A of the housing 110. An operating portion 131 that protrudes upward is provided at the center of the top surface of the stem 130. The operating portion 131 is a portion that is pressed downward by the operator. A pressing portion 134 that protrudes downward is provided at the center of the bottom surface of the stem 130. The pressing portion 134 is a portion that presses the top of the metal contact 140.

The metal contact 140 is an example of a "movable contact". The metal contact 140 is a member formed using a metal plate. The metal contact 140 has a circular shape in a plan view and a dome shape that is convex upward. The metal contact 140 is placed on the inner bottom surface of the recess 110A of the housing 110. The outer peripheral edge of the metal contact 140 is always in contact with the second fixed contact 152A.

The frame 120 is an annular member having a circular opening 120A. The frame 120 is provided above the stem 130. The frame 120 can hold down the outer periphery of the stem 130 from above by inserting the operating portion 131 of the stem 130 through the opening 120A. The frame 120 is fixed at its outer periphery to the inner periphery of the recess 110A of the housing 110. In this way, the frame 120 can restrict the upward movement of the stem 130 and prevent the stem 130 from falling out of the recess 110A.

When the operating portion 131 of the stem 130 of the switch device 100 is pressed, the stem 130 moves downward, and the pressing portion 134 of the stem 130 presses the top of the metal contact 140. When the top of the metal contact 140 is inverted, the back side of the top of the metal contact 140 comes into contact with the first fixed contact 151A. This causes the switch device 100 to enter a state (switch-on state) in which the first fixed contact 151A and the second fixed contact 152A are conductive to each other via the metal contact 140.

(Method of manufacturing the switch device 100)
Next, a method for manufacturing the switch device 100 according to an embodiment will be described with reference to Fig. 8. Fig. 8 is a flowchart showing the steps of the method for manufacturing the switch device 100 according to an embodiment.

First, the first metal terminal member 151 and the second metal terminal member 152 are formed by pressing the base material (metal plate) (step S201: metal terminal member forming process). In this embodiment, phosphor bronze is used as the material for the base material (metal plate).

Next, a nickel plating layer is formed over the entire first metal terminal member 151 and the second metal terminal member 152 (step S202: nickel plating layer formation process).

Next, a gold plating layer is formed on a portion of the first metal terminal member 151 and the second metal terminal member 152 (step S203: gold plating layer forming process). Specifically, a second gold plating layer is formed on each of the first fixed contact 151A and the pair of second fixed contacts 152A. In addition, a first gold plating layer is formed on each of the pair of first terminal surfaces 151B and the pair of second terminal surfaces 152B.

Here, in this embodiment, the thickness of the first gold plating layer is set so that the ratio of the thickness of the first gold plating layer to the thickness of the solder sheet is 0.01 to 0.08:25. In particular, in this embodiment, the thickness of the first gold plating layer is set to "0.01 μm to 0.08 μm" as a preferred example derived by the inventors.

In addition, in this embodiment, the thickness of the second gold plating layer is made greater than the thickness of the first gold plating layer. In particular, in this embodiment, the thickness of the second gold plating layer is set to "0.1 μm to 0.2 μm" as a preferred example derived by the inventors.

Next, the housing 110 is molded by insert molding the first metal terminal member 151 and the second metal terminal member 152 (step S204: housing molding process).

Next, a solder sheet is placed on each of the pair of first terminal surfaces 151B and the pair of second terminal surfaces 152B (step S205: solder sheet placement process). Specifically, a solder sheet of the same shape (i.e., rectangular in this embodiment) and size as the first terminal surface 151B and the second terminal surface 152B is placed so as to entirely cover the first terminal surface 151B and the second terminal surface 152B.

Here, in this embodiment, the thickness of the solder sheet is set so that the ratio of the thickness of the first gold plating layer to the thickness of the solder sheet is 0.01 to 0.08:25. In particular, in this embodiment, the thickness of the solder sheet is set to "10 μm to 25 μm" as a suitable example derived by the inventors.

Next, a preliminary solder layer is formed by melting the solder sheet by reflowing each of the pair of first terminal surfaces 151B and the pair of second terminal surfaces 152B (step S206: preliminary solder layer formation process). Note that in this process, a method of melting the solder sheet using reflow has been shown, but this is not limiting. For example, a method of melting the solder sheet manually using a soldering iron, a method of melting the solder sheet using a heat press, a jet solder in which molten solder is sprayed onto the terminals together with hot air, a method of passing a high current through the terminals to heat them up and melt the solder, etc. may also be used.

Finally, each component (stem 130, metal contact 140, and frame 120) is assembled into the housing 110 (step S207: assembly process). This completes the switch device 100.

(An example of an area where a gold plating layer and a spare solder layer are formed)
Fig. 9 is a diagram showing an example of a region where a gold plating layer and a spare solder layer are formed on the lower surfaces of the first metal terminal member 151 and the second metal terminal member 152 included in the switch device 100 according to one embodiment. Fig. 10 is a diagram showing an example of a region where a gold plating layer is formed on the upper surfaces of the first metal terminal member 151 and the second metal terminal member 152 included in the switch device 100 according to one embodiment.

As shown in FIG. 9, in this embodiment, a first gold plating layer is formed on each of a pair of first terminal surfaces 151B on the underside of the first metal terminal member 151 and a pair of second terminal surfaces 152B on the underside of the second metal terminal member 152, a solder sheet is placed on each of the first terminal surfaces 151B, and a preliminary solder layer is formed by melting the solder sheet.

Also, as shown in FIG. 10, in this embodiment, a second gold plating layer having a thickness greater than that of the first gold plating layer is formed on each of the first fixed contact 151A on the upper surface of the first metal terminal member 151 and the pair of second fixed contacts 152A on the upper surface of the second metal terminal member 152.

(An example of a laminated structure of first terminal surface 151B and second terminal surface 152B)
Fig. 11 is a diagram showing an example of a laminated structure of the first terminal surface 151B and the second terminal surface 152B in the switch device 100 according to one embodiment. Fig. 11 shows an example of a laminated structure of the first terminal surface 151B and the second terminal surface 152B when a solder sheet is placed in a solder sheet placing process.

As shown in FIG. 11, on the first terminal surface 151B and the second terminal surface 152B (hereinafter referred to as "each terminal surface"), a nickel plating layer is formed on the surface of the metal plate by the nickel plating layer formation process described above.

Also, as shown in FIG. 11, on each terminal surface, a first gold plating layer is formed on the nickel plating layer by the above-mentioned gold plating layer formation process.

Also, as shown in FIG. 11, on each terminal surface, a solder sheet is placed on the first gold plating layer by the solder sheet placement process described above.

As shown in FIG. 11, in this embodiment, as a preferred example, the thickness of the solder sheet is 25 μm. Also, in this embodiment, as a preferred example, the thickness of the first gold plating layer is 0.01 μm to 0.08 μm. As a result, in this embodiment, as a preferred example, the ratio of the thickness of the first gold plating layer to the thickness of the solder sheet is 0.01 to 0.08:25.

(Example)
12 is a diagram showing the implementation conditions and implementation results of one embodiment. In this embodiment, for each of a number of embodiments (first to fifth embodiments) in which the thickness of the first gold plating layer formed on the first terminal surface 151B and the second terminal surface 152B (hereinafter referred to as "terminal surface") is different, a number of spare solder layers were formed by reflow, and the formation state of each of the spare solder layers was confirmed.

<Common conditions>
The conditions common to each example are as follows.

・Solder sheet thickness: 25 μm
Number of spare solder layers formed: 40

<Judgment method>
In this example, when the pre-solder layer was formed on the entire surface of the terminal surface without any chipping, it was judged as "good." Also, in this embodiment, when chipping occurred in part of the pre-solder layer and the gold plating layer formed on the terminal surface (i.e., when the nickel plating layer was exposed), it was judged as "poor."

First Example
12, in the first embodiment, the thickness of the first gold plating layer was arbitrarily set within the range of 0.01 to 0.03 μm, and 40 spare solder layers were formed. In the first embodiment, the number of spare solder layers judged to be “defective” was “0.”

Second Example
12, in the second example, the thickness of the first gold plating layer was arbitrarily set within the range of 0.03 to 0.05 μm, and 40 spare solder layers were formed. In the second example, the number of spare solder layers judged to be “defective” was “0.”

<Third Example>
12, in the third embodiment, the thickness of the first gold plating layer was arbitrarily set within the range of 0.03 to 0.07 μm, and 40 spare solder layers were formed. In the third embodiment, the number of spare solder layers judged to be “defective” was “0.”

<Fourth Example>
12, in the fourth embodiment, the thickness of the first gold plating layer was arbitrarily set within the range of 0.05 to 0.08 μm, and 40 spare solder layers were formed. In the fourth embodiment, the number of spare solder layers judged to be “defective” was “0.”

Fifth Example
As shown in Fig. 12, in the fifth embodiment, the thickness of the first gold plating layer was arbitrarily set within the range of 0.06 to 0.10 µm, and 40 spare solder layers were formed. In the first embodiment, the number of spare solder layers judged to be "defective" was "3". The cause of this is that gold is melted into the solder when the solder sheet is melted. It is presumed that the solder becomes brittle as the concentration of AuSn increases, and the surface tension of the solder causes a part of the AuSn to peel off from the nickel plating layer, exposing the nickel plating layer.

In this embodiment, it was confirmed that when the thickness of the solder sheet is 25 μm, by setting the thickness of the first gold plating layer to 0.01 μm to 0.08 μm, there is almost no occurrence of defective formation of the spare solder layer.

From this, it was confirmed that the manufacturing method of the switch device 100 according to one embodiment can cover the entire terminal surface with the spare solder layer without exposing the nickel plating layer and with almost no defective formation of the spare solder layer on the terminal surface by setting the thickness of the first gold plating layer and the solder sheet so that the ratio of the thickness of the first gold plating layer to the thickness of the solder sheet is "0.01 to 0.08:25". Therefore, according to the manufacturing method of the switch device 100 according to one embodiment, defective formation of the spare solder layer on the terminal surface can be suppressed.

It was also confirmed that the manufacturing method for the switch device 100 according to one embodiment can cover the entire terminal surface with a spare solder layer without exposing the nickel plating layer and with almost no defective formation of the spare solder layer on the terminal surface, even by setting the thickness of the first gold plating layer to "0.01 μm to 0.08 μm" and the thickness of the solder sheet to "25 μm." Therefore, according to the manufacturing method for the switch device 100 according to one embodiment, defective formation of the spare solder layer on the terminal surface can be suppressed.

The specific gravity of the gold plating is "16". The specific gravity of the solder sheet is "7.4". From this, when the ratio of the thickness of the first gold plating layer to the thickness of the solder sheet is "0.01-0.08:25", the weight ratio of gold contained in the preliminary solder layer formed on the terminal surface due to the gold plating melting into the solder sheet during reflow is "0.08-0.76% wt". Therefore, the weight ratio of gold contained in the preliminary solder layer formed on the terminal surface of the switch device 100 according to one embodiment manufactured by the manufacturing method of the switch device 100 according to one embodiment is "0.08-0.76% wt". From this, it can be determined that the ratio of the thickness of the first gold plating layer to the thickness of the solder sheet is "0.01-0.08:25" when the switch device 100 according to one embodiment is manufactured, and it can be determined that the formation failure of the preliminary solder layer on the terminal surface when the switch device 100 is manufactured is suppressed.

In addition, in the manufacturing method of the switch device 100 according to one embodiment, and the switch device 100 according to one embodiment, the thickness of the second gold plating layer is made greater than the thickness of the first gold plating layer. In particular, in the manufacturing method of the switch device 100 according to one embodiment, and the switch device 100 according to one embodiment, the thickness of the second gold plating layer is set to "0.1 μm to 0.2 μm" as a preferred example derived by the inventors. As a result, the manufacturing method of the switch device 100 according to one embodiment, and the switch device 100 according to one embodiment can suppress contact failure of the metal contact 140 at the first fixed contact 151A and the pair of second fixed contacts 152A on which the second gold plating layer is formed.

In addition, the manufacturing method for the switch device 100 according to one embodiment and the switch device 100 according to one embodiment have a suitable solder sheet thickness of "10 μm to 25 μm." As a result, the manufacturing method for the switch device 100 according to one embodiment and the switch device 100 according to one embodiment can achieve sufficient adhesion of the terminal surface with solder while suppressing solder protrusion from the terminal surface, which can cause a short circuit.

Although one embodiment of the present invention has been described in detail above, the present invention is not limited to these embodiments, and various modifications and alterations are possible within the scope of the gist of the present invention described in the claims.

For example, the present invention is not limited to switch devices, but can be applied to any electrical component that has a spare solder layer formed on at least the terminal surface.

REFERENCE SIGNS LIST 100 Switch device 110 Housing 110A Recess 120 Frame 120A Opening 130 Stem 131 Operation portion 134 Pressing portion 140 Metal contact 151 First metal terminal member 151A First fixed contact 151B First terminal surface 152 Second metal terminal member 152A Second fixed contact 152B Second terminal surface

Claims (6)

A fixed contact provided within the housing;
a terminal surface extending from the fixed contact to the outside of the housing;
A manufacturing method of a switch device including a movable contact that moves in contact with and out of contact with the fixed contact,
a gold plating layer forming step of forming a first gold plating layer on the terminal surface;
a solder sheet placing step of placing a solder sheet on a surface of the first gold plating layer;
a preliminary solder layer forming step of forming a preliminary solder layer on the terminal surface by melting the solder sheet,
the ratio of the thickness of the first gold plating layer to the thickness of the solder sheet is 0.01 to 0.08:25 ;
The thickness of the solder sheet is 10 μm to 25 μm.
A method for manufacturing a switch device comprising the steps of: A fixed contact provided within the housing;
a terminal surface extending from the fixed contact to the outside of the housing;
A manufacturing method of a switch device including a movable contact that moves in contact with and out of contact with the fixed contact,
a gold plating layer forming step of forming a first gold plating layer on the terminal surface;
a solder sheet placing step of placing a solder sheet on a surface of the first gold plating layer;
a preliminary solder layer forming step of forming a preliminary solder layer on the terminal surface by melting the solder sheet;
Including,
the ratio of the thickness of the first gold plating layer to the thickness of the solder sheet is 0.01 to 0.08:25;
In the gold plating layer forming step,
forming a second gold plating layer on the fixed contact;
the thickness of the second gold plating layer is greater than the thickness of the first gold plating layer. 3. The method for manufacturing a switch device according to claim 1 , wherein the second gold plating layer has a thickness of 0.1 μm to 0.2 μm. A method for manufacturing an electrical component having a terminal surface extending outside a housing, comprising the steps of:
a gold plating layer forming step of forming a first gold plating layer on the terminal surface;
a solder sheet placing step of placing a solder sheet on a surface of the first gold plating layer;
a preliminary solder layer forming step of forming a preliminary solder layer on the terminal surface by melting the solder sheet,
the ratio of the thickness of the first gold plating layer to the thickness of the solder sheet is 0.01 to 0.08:25;
The thickness of the solder sheet is 10 μm to 25 μm.
A method for manufacturing an electrical component comprising the steps of: A fixed contact provided within the housing;
a terminal surface extending from the fixed contact to an outside of the housing,
a gold plating layer forming step of forming a first gold plating layer on the terminal surface;
a solder sheet placing step of placing a solder sheet on a surface of the first gold plating layer;
a preliminary solder layer forming step of forming a preliminary solder layer on the terminal surface by melting the solder sheet;
Including,
the ratio of the thickness of the first gold plating layer to the thickness of the solder sheet is 0.01 to 0.08:25;
In the gold plating layer forming step,
forming a second gold plating layer on the fixed contact;
4. A method for manufacturing an electrical component, comprising the steps of: forming a first gold plating layer on a first surface of the first metal substrate ; A fixed contact provided within the housing;
a terminal surface extending from the fixed contact to the outside of the housing;
a movable contact that moves toward and away from the fixed contact,
The terminal surface is
a pre-solder layer is formed on the first gold plating layer;
The weight percentage of gold contained in the preliminary solder layer is 0.08 to 0.76% by weight;
forming a second gold plating layer on the fixed contact;
The thickness of the second gold plating layer is greater than the thickness of the first gold plating layer.
A switching device comprising:

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