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JP7622920B2 - Heating device and heating method for heating a heating element - Google Patents
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JP7622920B2 - Heating device and heating method for heating a heating element - Google Patents

Heating device and heating method for heating a heating element Download PDF

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JP7622920B2
JP7622920B2 JP2018177939A JP2018177939A JP7622920B2 JP 7622920 B2 JP7622920 B2 JP 7622920B2 JP 2018177939 A JP2018177939 A JP 2018177939A JP 2018177939 A JP2018177939 A JP 2018177939A JP 7622920 B2 JP7622920 B2 JP 7622920B2
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俊之 鮫島
智由 宮▲崎▼
剛 小林
和泉 芹澤
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Orc Manufacturing Co Ltd
Tokyo University of Agriculture and Technology NUC
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Description

特許法第30条第2項適用 2018年 第79回 応用物理学会秋季学術講演会で発表Application of Article 30, Paragraph 2 of the Patent Act Presented at the 79th Autumn Meeting of the Japan Society of Applied Physics in 2018

特許法第30条第2項適用 AM-FPD18 第25回インターナショナルワークショップで発表Application of Article 30, Paragraph 2 of the Patent Law Presented at the 25th International Workshop AM-FPD18

本発明は、マイクロ波を用いた加熱装置に関し、特に、マイクロ波を吸収して発熱する発熱体の温度調整に関する。 The present invention relates to a heating device that uses microwaves, and in particular to temperature control of a heating element that absorbs microwaves and generates heat.

金属やセラミックスなどを焼成する炉として、マイクロ波を利用した焼成炉が知られている。そこでは、断熱材からなる容器の内壁に、マイクロ波を吸収して発熱する発熱体を塗布する。そして、容器内に金属粉末あるいはセラミック粉末を含有する被加熱物を設置し、電子レンジ内に容器を所定時間入れて焼成する(特許文献1参照)。発熱体としては、例えば、耐熱性の高い2種類の炭化ケイ素粉末と、水ガラス、粘土物質などの耐熱性材とを混合したものが使用される。 A microwave-based furnace is known as a furnace for firing metals, ceramics, etc. In this furnace, a heating element that absorbs microwaves and generates heat is applied to the inner wall of a container made of insulating material. An object to be heated containing metal powder or ceramic powder is then placed in the container, and the container is placed in a microwave oven for a predetermined time to be fired (see Patent Document 1). For example, a mixture of two types of highly heat-resistant silicon carbide powder and a heat-resistant material such as water glass or clay is used as the heating element.

特開2001-284039号公報JP 2001-284039 A

発熱体の加熱処理時間を短縮することが被加熱物の短時間による高速焼成をもたらすことから、マイクロ波を利用して熱源となる発熱体をできる限り高速昇温させることが必要となる。しかしながら、容器内壁に発熱体を塗布する上記マイクロ波加熱装置では、電気抵抗が大きいケイ素が発熱体に含まれるため、今まで以上の高速昇温を実現することが難しい。また、短時間の高速焼成を実現するためには、発熱体を高速昇温させながら、温度の乱れなく発熱体の温度を所望する温度へ到達させる必要もある。 Because shortening the heating process time of the heating element results in rapid baking of the heated object in a short time, it is necessary to use microwaves to raise the temperature of the heating element, which serves as the heat source, as quickly as possible. However, in the above-mentioned microwave heating device in which the heating element is applied to the inner wall of the container, it is difficult to achieve a faster temperature rise than ever before because the heating element contains silicon, which has a high electrical resistance. Also, in order to achieve rapid baking in a short time, it is necessary to raise the temperature of the heating element quickly and ensure that the temperature of the heating element reaches the desired temperature without temperature disturbance.

したがって、精密に温度コントロールしながら発熱体の高速昇温を実現可能な加熱装置および加熱方法が求められる。 Therefore, there is a demand for a heating device and a heating method that can achieve rapid heating of the heating element while precisely controlling the temperature.

本発明の加熱装置は、マイクロ波を吸収して発熱するカーボンを含む発熱材と、マイクロ波を透過し、発熱材が内部に配置される容器とを有する発熱体と、発熱体の温度を測定する温度測定部とを備える。例えば、カーボン粉粒体の発熱材が容器内に充填可能である。この場合、発熱材の全体厚さおよび粉粒体の充填率の少なくとも一方が、粒子間の熱伝導による昇温よりもマイクロ波吸収による昇温が支配的となるように、定められる。また、発熱材に対して不活性な流体を容器内に封入することもできる。 The heating device of the present invention includes a heating element having a heat generating material containing carbon that absorbs microwaves and generates heat, and a container that is permeable to microwaves and in which the heat generating material is placed, and a temperature measuring unit that measures the temperature of the heating element. For example, the container can be filled with a heat generating material of carbon powder. In this case, at least one of the total thickness of the heat generating material and the packing rate of the powder is determined so that the temperature rise due to microwave absorption is dominant over the temperature rise due to thermal conduction between particles. Also, a fluid that is inert to the heat generating material can be enclosed in the container.

本発明では、加熱装置が、30(℃/sec)以上の昇温速度で発熱体を昇温させ、発熱体の温度を目標温度に合わせて維持するように、測定された温度に基づいてマイクロ波を発熱体に照射する。ここでの30(℃/sec)以上の昇温速度とは、温度が上昇している過程で一時的に測定される昇温速度を示し、昇温速度がほぼ一定で温度上昇している期間の昇温速度を表す。 In the present invention, the heating device heats the heating element at a heating rate of 30 (°C/sec) or more, and irradiates the heating element with microwaves based on the measured temperature so as to maintain the temperature of the heating element at the target temperature. A heating rate of 30 (°C/sec) or more here refers to a heating rate measured temporarily while the temperature is rising, and represents the heating rate during the period when the temperature is rising at a nearly constant heating rate.

例えば加熱装置は、発熱体を、30(℃/sec)以上の昇温速度で目標温度付近の温度まで昇温させ、その後、漸近的に目標温度へ近づくように発熱体を昇温させることが可能である。一方、加熱装置は、発熱体を、30(℃/sec)以上の降温速度で降温させることも可能である。 For example, the heating device can heat the heating element to a temperature close to the target temperature at a heating rate of 30 (°C/sec) or more, and then heat the heating element so that it asymptotically approaches the target temperature. On the other hand, the heating device can also cool the heating element at a cooling rate of 30 (°C/sec) or more.

加熱装置は、発熱体へマイクロ波を照射するマグネトロンと、マグネトロンの電力を制御する制御部とを備える構成にすることができる。制御部が、マグネトロンの電力を制御することによって、30(℃/sec)以上の昇温速度で発熱体を昇温させることができる。例えば、マグネトロンへの電力が100W以上であり、目標温度を800℃以上に定める。 The heating device can be configured to include a magnetron that irradiates microwaves to the heating element, and a control unit that controls the power of the magnetron. The control unit can control the power of the magnetron to heat the heating element at a heating rate of 30 (°C/sec) or more. For example, the power to the magnetron is 100 W or more, and the target temperature is set to 800°C or more.

制御部は、駆動開始から目標付近温度到達までマグネトロンの電力を徐々に増加させていくことができる。そして、発熱体の目標付近温度到達に応じて電力を下げ、電力の増減を複数回繰り返す温度制御を行えばよい。一方、制御部は、30(℃/sec)以上の降温速度で発熱体を降温させるとき、電力を徐々に下げればよい。 The control unit can gradually increase the power of the magnetron from the start of operation until the target temperature is reached. Then, the power can be reduced as the heating element reaches a temperature close to the target, and temperature control can be performed by repeatedly increasing and decreasing the power multiple times. On the other hand, the control unit can gradually reduce the power when lowering the temperature of the heating element at a temperature reduction rate of 30 (°C/sec) or more.

本発明の他の態様である加熱方法は、マイクロ波を吸収して発熱するカーボンを含む発熱材と、マイクロ波を透過して発熱材を収容する容器とを備えた発熱体に対し、マイクロ波を照射する加熱方法であって、発熱体の温度を測定し、30(℃/sec)以上の昇温速度で発熱体を昇温させ、発熱体の温度を目標温度に合わせ、そして発熱体の温度を目標温度で維持するように、測定された温度に基づいてマイクロ波を発熱体へ照射する。 Another aspect of the present invention is a heating method in which microwaves are irradiated to a heating element that includes a heat generating material containing carbon that absorbs microwaves and generates heat, and a container that transmits microwaves and contains the heat generating material. The method measures the temperature of the heating element, raises the temperature of the heating element at a heating rate of 30°C/sec or more, adjusts the temperature of the heating element to a target temperature, and irradiates the heating element with microwaves based on the measured temperature so as to maintain the temperature of the heating element at the target temperature.

本発明によれば、短時間で発熱体を所望する温度まで昇温させ、被加熱物を加熱することができる。 According to the present invention, the heating element can be heated to the desired temperature in a short time, and the object to be heated can be heated.

マイクロ波加熱装置の概略的構成図である。FIG. 1 is a schematic diagram of a microwave heating device. 第1の実施形態である発熱管の概略的断面図である。1 is a schematic cross-sectional view of a heating tube according to a first embodiment. 第2の実施形態であるマイクロ波加熱装置の概略的構成図である。FIG. 5 is a schematic configuration diagram of a microwave heating device according to a second embodiment. マイクロ波加熱に伴うマイクロ波発振機の電力を時間経過とともに示したグラフである。1 is a graph showing the power of a microwave generator associated with microwave heating over time. マイクロ波加熱に伴う発熱体の温度を時間経過とともに示したグラフである。1 is a graph showing the temperature of a heating element over time due to microwave heating. 発熱体の温度制御に関する制御ブロック図である。FIG. 4 is a control block diagram relating to temperature control of a heating element.

以下では、図面を参照して本発明の実施形態について説明する。 Below, an embodiment of the present invention will be described with reference to the drawings.

図1は、第1の実施形態であるマイクロ波加熱装置の概略的構成図である。図2は、発熱管の概略的断面図である。 Figure 1 is a schematic diagram of a microwave heating device according to a first embodiment. Figure 2 is a schematic cross-sectional view of a heating tube.

マイクロ波多重反射型加熱装置(マイクロ波焼成炉ともいう。以下では、「マイクロ波加熱装置」と称す)10は、マイクロ波を利用して被加熱物を加熱、焼成あるいは乾燥する装置であり、耐熱性のある矩形状のマイクロ波反射容器(以下、反射容器という)40を備える。反射容器40の異なる側面にはマイクロ波発振機(マグネトロン)50が装着されており、反射容器内の発熱管20に向けてマイクロ波が発振される。 The microwave multiple reflection type heating device (also called a microwave baking furnace; hereafter referred to as the "microwave heating device") 10 is a device that uses microwaves to heat, bake or dry objects to be heated, and is equipped with a heat-resistant rectangular microwave reflecting container (hereafter referred to as the reflecting container) 40. Microwave oscillators (magnetrons) 50 are attached to different sides of the reflecting container 40, and microwaves are emitted toward the heating tube 20 inside the reflecting container.

反射容器40の空間領域40Mにおける中央部には、発熱管20が支持部材(図示せず)によって設置されており、その傍には、被加熱物30が保持部材(図示せず)によって保持されている。被加熱物としては、例えば、セラミックス、半導体、有機物である。さらに、マイクロ波加熱装置10は、マイクロ波発振機50を制御可能な電源回路(図示せず)と、発熱管20の温度を測定するサーモメータ(放射温度計)(図示せず)を備え、電源回路は、サーモメータによって検出される発熱管20の温度に基づいてマイクロ波発振機50を制御する。 The heating tube 20 is installed in the center of the spatial region 40M of the reflecting container 40 by a support member (not shown), and the heated object 30 is held beside it by a holding member (not shown). The heated object may be, for example, ceramics, semiconductors, or organic matter. Furthermore, the microwave heating device 10 includes a power supply circuit (not shown) capable of controlling the microwave oscillator 50, and a thermometer (radiation thermometer) (not shown) that measures the temperature of the heating tube 20, and the power supply circuit controls the microwave oscillator 50 based on the temperature of the heating tube 20 detected by the thermometer.

図2に示すように、発熱管(以下、発熱体ともいう)20は、発熱材を配置する容器であり、ここでは、一方の端部に導入管22が形成された密閉性のある有底管状容器で構成され、マイクロ波を透過する石英材によって加熱成形されている。ただし、容器構成はこれに限らず、例えば軸長さに対して内径が大きい円板状容器にしてもよい。発熱管20内には、カーボン発熱材70が発熱管20内部全体をほぼ満たすように充填されている。 As shown in FIG. 2, the heating tube (hereinafter also referred to as the heating element) 20 is a container in which the heating material is placed, and here consists of a sealed, bottomed tubular container with an inlet tube 22 formed at one end, and is heat-formed from a quartz material that transmits microwaves. However, the container configuration is not limited to this, and it may be, for example, a disk-shaped container with an inner diameter large relative to its axial length. Carbon heating material 70 is filled inside the heating tube 20 so as to almost fill the entire inside of the heating tube 20.

カーボン発熱材70は、ここでは流動可能なカーボン粉粒体70Mで構成されている。カーボン粉粒体70Mは、塊状のカーボン素材を粉砕することで得られ、いわゆる粗砕あるいは中砕によって、所定の粒径をもつ粒子の集合体であるカーボン粉粒体70Mを生成する。 Here, the carbon heating material 70 is composed of flowable carbon powder 70M. The carbon powder 70M is obtained by crushing a lump of carbon material, and the carbon powder 70M, which is an aggregate of particles having a specified particle size, is produced by so-called coarse crushing or medium crushing.

カーボン粉粒体70Mの各粒子は不規則な凹凸表面を有するため、カーボン粉粒体70Mを発熱管20内に入れたとき、粒子間に隙間が生じる。粒子間の隙間はカーボン発熱材70全体に存在する。発熱管20の内径、カーボン粉粒体70Mの充填率は、後述するように、マイクロ波吸収による発熱が支配的となるように定められている。 Since each particle of the carbon powder 70M has an irregular, uneven surface, gaps are created between the particles when the carbon powder 70M is placed inside the heating tube 20. The gaps between the particles are present throughout the entire carbon heating material 70. The inner diameter of the heating tube 20 and the filling rate of the carbon powder 70M are determined so that heat generation due to microwave absorption is dominant, as described below.

図2に示すように、カーボン発熱材70と発熱管内面20Uの鉛直方向に沿った上端面との間には、管軸方向全体に渡って希ガスで満たされた空間領域Sが形成されている。ただし、図2では空間領域Sのサイズを誇張して描いているため、カーボン粉粒体70Mから構成されるカーボン発熱材70の全体厚さは発熱管20の内径と略等しい。また、発熱管20の端部に形成された導入管22の内部には、カーボン粉粒体70Mを充填させておらず、希ガスで満たされた空間領域が形成されている。 As shown in FIG. 2, a spatial region S filled with a rare gas is formed over the entire tube axial direction between the carbon heating material 70 and the vertical upper end surface of the heating tube inner surface 20U. However, since the size of the spatial region S is exaggerated in FIG. 2, the overall thickness of the carbon heating material 70 composed of carbon powder particles 70M is approximately equal to the inner diameter of the heating tube 20. In addition, the inside of the introduction tube 22 formed at the end of the heating tube 20 is not filled with carbon powder particles 70M, and a spatial region filled with a rare gas is formed.

カーボン発熱材70を除く発熱管20内の残余の空間領域は、希ガスによって満たされている。ここでは、ヘリウム、ネオン、アルゴン、キセノンのいずれかのガス、あるいはこれら二種類以上のガスが封入されている。希ガスは、カーボン発熱材70に対して不活性であり、石英ガラスから成る発熱管20に対しても不活性である。 The remaining space in the heating tube 20, excluding the carbon heating material 70, is filled with a rare gas. Here, one of the following gases is sealed: helium, neon, argon, or xenon, or two or more of these gases. The rare gas is inactive to the carbon heating material 70, and is also inactive to the heating tube 20 made of quartz glass.

粒子間に隙間のあるカーボン粉粒体70Mおよび希ガスを気密封入した発熱管20に対してマイクロ波を照射すると、マイクロ波がカーボン粉粒体70M全体に対して到達する。特に、発熱管20の中心(軸)付近にあるカーボン粉粒体にも到達する。 When microwaves are applied to carbon powder 70M, which has gaps between the particles, and a heating tube 20 containing a rare gas sealed inside, the microwaves reach the entire carbon powder 70M. In particular, they reach the carbon powder near the center (axis) of the heating tube 20.

その結果、短時間で高温状態に到達することができる。特に、希ガスが発熱管20内に封入されることによって、カーボン粉粒体70Mが大気中の酸素との反応により二酸化炭素化して減量し充填量が少なくなることを防止できる。 As a result, a high temperature state can be reached in a short time. In particular, by sealing the rare gas inside the heating tube 20, it is possible to prevent the carbon powder 70M from reacting with oxygen in the air to turn into carbon dioxide, which reduces the weight and reduces the filling amount.

カーボン粉粒体70Mが発熱すると、中心付近のカーボン粉粒体70Mで発生する熱が発熱管20外部へ放出される。その結果、発熱管20全体としての熱放射が高まり、被加熱物を短時間で高温状態に到達させることができる。 When the carbon powder 70M generates heat, the heat generated in the carbon powder 70M near the center is released to the outside of the heating tube 20. As a result, the heat radiation of the heating tube 20 as a whole is increased, and the heated object can reach a high temperature in a short time.

発熱管20の内径、カーボン粉粒体70Mの充填率は、マイクロ波に照射されるカーボン発熱材70の表面積を増やすことで、短時間による昇温を実現するように定められている。発熱管20の内径が小さすぎるとカーボン粉粒体70Mの量が少なくなり、発熱効果が小さくなる。一方、発熱管20の内径(カーボン発熱材70の全体厚さ)が大きすぎると、発熱管20の中心付近までマイクロ波が届かず、熱伝導による昇温が支配的となって短時間で高温状態にならない。例えば、発熱管20の内径として、1mm~100mmに設定することが可能である。 The inner diameter of the heating tube 20 and the filling rate of the carbon powder 70M are set to increase the surface area of the carbon heating material 70 irradiated with microwaves, thereby realizing a rapid temperature rise. If the inner diameter of the heating tube 20 is too small, the amount of carbon powder 70M will be small, resulting in a reduced heat generation effect. On the other hand, if the inner diameter of the heating tube 20 (total thickness of the carbon heating material 70) is too large, the microwaves will not reach the center of the heating tube 20, and the temperature rise due to thermal conduction will become dominant, preventing the heating from reaching a high temperature in a short time. For example, the inner diameter of the heating tube 20 can be set to 1 mm to 100 mm.

カーボン粉粒体70Mの充填率が小さすぎると、充填量の少なさによって熱放射が低下するとともに、発熱管20内でのカーボン粉粒体70Mの径方向あるいは軸方向の偏りによって不均一な高温状態となり、発熱管20への負荷が大きくなる。一方、充填率が大き過ぎると、発熱管20の中心付近へマイクロ波が届きにくくなり、短時間での高温状態への到達が難しい。充填率は、ここでは0.05~0.2の範囲に定められている。ただし、充填率は、発熱管20内の空間体積に対するカーボン粉粒体70Mの体積割合を表す。 If the filling rate of the carbon powder 70M is too small, the heat radiation will decrease due to the small filling amount, and the carbon powder 70M will be misaligned in the radial or axial direction inside the heating tube 20, resulting in an uneven high temperature state, and the load on the heating tube 20 will be large. On the other hand, if the filling rate is too large, it will be difficult for the microwaves to reach the center of the heating tube 20, making it difficult to reach a high temperature state in a short period of time. The filling rate is set here to a range of 0.05 to 0.2. However, the filling rate represents the volume ratio of the carbon powder 70M to the volume of the space inside the heating tube 20.

希ガス、カーボン発熱材70を封入した発熱管20は、以下のように製造することができる。マイクロ波を透過する石英材を加熱して一端に導入管を設けた有底筒状容器に対し、マイクロ波を吸収して発熱するカーボン材(カーボン粉粒体)を導入管から容器内に充填する。その後、カーボン材に対して不活性である希ガスを、所定範囲となるように導入管から封入する。例えば、1kPa~40kPaの範囲に定められる。そして、導入管を加熱軟化させて封止することで容器を密閉する。 The heating tube 20 filled with rare gas and carbon heating material 70 can be manufactured as follows. A microwave-transparent quartz material is heated to create a bottomed cylindrical container with an introduction tube at one end, and carbon material (carbon powder) that absorbs microwaves and generates heat is filled into the container through the introduction tube. A rare gas that is inactive to the carbon material is then filled through the introduction tube to a specified range. For example, the range is set to 1 kPa to 40 kPa. The introduction tube is then heated and softened to seal the container, sealing it.

希ガスの封入ガス圧は容器の耐圧特性と気圧がガスの絶対温度に比例する関係から決めることができる。例えば、最初常温300Kの発熱管をマイクロ波加熱して2000Kの高温度に上げ、そのときの発熱管内の圧力が大気圧と同じにする設計条件のときは、発熱管の常温でのガス圧力は15.195kPaとなる。また、常温300Kの発熱管をマイクロ波加熱して800Kの中温度に上げ、そのときの発熱管内の圧力が大気圧と同じにする設計条件のときは、発熱管の常温でのガス圧力を37.988kPaと大きくすることができる。 The pressure of the enclosed rare gas can be determined from the pressure resistance characteristics of the container and the relationship in which air pressure is proportional to the absolute temperature of the gas. For example, if a heating tube with a room temperature of 300 K is initially heated by microwaves to a high temperature of 2000 K, and the design conditions are such that the pressure inside the heating tube at that time is the same as atmospheric pressure, then the gas pressure in the heating tube at room temperature will be 15.195 kPa. Also, if a heating tube with a room temperature of 300 K is initially heated by microwaves to a medium temperature of 800 K, and the design conditions are such that the pressure inside the heating tube at that time is the same as atmospheric pressure, then the gas pressure in the heating tube at room temperature can be increased to 37.988 kPa.

このように本実施形態のマイクロ波加熱装置は、気密性のある石英製の発熱管20と、発熱管20を格納する反射容器40と、反射容器40内にマイクロ波を発振するマイクロ波発振機50とを備え、発熱管20の管内には、カーボン粉粒体70Mからなるカーボン発熱材70が充填されるとともに、希ガスが封入されている。 The microwave heating device of this embodiment thus comprises an airtight quartz heating tube 20, a reflecting container 40 that houses the heating tube 20, and a microwave oscillator 50 that generates microwaves within the reflecting container 40. The inside of the heating tube 20 is filled with carbon heating material 70 made of carbon powder 70M, and rare gas is also enclosed.

このような構成により、発熱管20が短時間で昇温し、被加熱物30を高速加熱、焼成することが可能となる。また、従来の電気炉などと比べて消費電力の低減をもたらす。また、熱源となる発熱管20を容易に交換する構成が可能となり、メンテナンスが簡素化する。 This configuration allows the heating tube 20 to heat up in a short time, enabling the object to be heated 30 to be heated and baked at high speed. This also reduces power consumption compared to conventional electric furnaces. In addition, the heating tube 20, which serves as the heat source, can be easily replaced, simplifying maintenance.

上述したマイクロ波加熱装置(マイクロ波焼成炉)では、矩形状の反射容器が採用されているが、円筒状や略球状であってもよい。また、反射容器内では発熱体である発熱管20の傍に被加熱物を配置する構成であるが、発熱管20に囲われた状態で被加熱物を設置する構成にしてもよい。例えば、複数の発熱管20に囲まれたマッフル炉として構成することが可能である。あるいは、他の熱処理装置の熱源としても使用可能である。 The microwave heating device (microwave baking furnace) described above uses a rectangular reflecting container, but it may also be cylindrical or roughly spherical. In addition, the object to be heated is placed next to the heating tube 20, which is the heating element, in the reflecting container, but the object to be heated may also be placed surrounded by the heating tube 20. For example, it can be configured as a muffle furnace surrounded by multiple heating tubes 20. Alternatively, it can be used as a heat source for other heat treatment devices.

カーボン発熱材の構成としては、塊状カーボン発熱部材を代わりに適用することも可能であり、例えば、カーボン板を軸方向に並べた塊状カーボン発熱部材を配置することが可能である。また、発熱管内に流入した気体(希ガス)を送ってカーボン発熱材によって加熱し、昇温された気体を放出するように構成することも可能である。さらに、中空円筒状(二重管構造)の発熱管に対し、その中空部に被加熱物を配置して加熱することも可能である。 As for the configuration of the carbon heating material, it is also possible to use a lump carbon heating member instead; for example, it is possible to arrange a lump carbon heating member in which carbon plates are arranged in the axial direction. It is also possible to configure it so that gas (rare gas) that flows into the heating tube is sent and heated by the carbon heating material, and the heated gas is then released. Furthermore, it is also possible to place an object to be heated in the hollow part of a hollow cylindrical (double tube structure) heating tube and heat it.

発熱管の素材は石英以外でもよく、マイクロ波を透過し、希ガスなどの気体に反応しなければよい。さらに、希ガス以外の気体であって、マイクロ波に不活性な流体を適用してもよい。容器内に含まれるガスとしては、カーボン発熱材に対して不活性なガスで満たさず、一部活性なガスが含まれるように構成してもよい。 The material of the heating tube may be other than quartz, as long as it transmits microwaves and does not react with gases such as rare gases. Furthermore, a fluid that is inert to microwaves and is a gas other than a rare gas may be used. The gas contained in the container may not be filled with a gas that is inert to the carbon heating material, but may be configured to contain some active gas.

次に、図3~5を用いて、第2の実施形態であるマイクロ波加熱装置について説明する。第2の実施形態では、発熱体の昇温および降温を制御する。 Next, a microwave heating device according to a second embodiment will be described with reference to Figures 3 to 5. In the second embodiment, the temperature rise and fall of the heating element is controlled.

図3は、第2の実施形態であるマイクロ波加熱装置の概略的ブロック図である。 Figure 3 is a schematic block diagram of a microwave heating device according to a second embodiment.

マイクロ波加熱装置100は、第1の実施形態と同様、反射容器40が被加熱材30、カーボン粉粒体70Mが封入される発熱管(発熱体)20を収容し、マイクロ波発振機150が発熱体20に対してマイクロ波を照射する。マイクロ波発振機150は、電源部86によって駆動し、ACトランス88と接続されている。 As in the first embodiment, the microwave heating device 100 has a reflector container 40 that houses the material to be heated 30 and a heating tube (heating element) 20 in which carbon powder 70M is enclosed, and a microwave generator 150 irradiates microwaves to the heating element 20. The microwave generator 150 is driven by a power supply unit 86 and is connected to an AC transformer 88.

温度計(温度測定部)90は、ここでは放射温度計が用いられ、発熱体20の表面温度を所定時間間隔(例えば数ミリsec)で測定する。温度計コントローラ92は、測定された温度を電圧に変換して電圧データをコントローラ84へ送る。コントローラ(制御部)84は、温度電圧変換データを基に、マイクロ波発振機150の駆動電圧を制御する信号を電源部86に送ることによって、マイクロ波発振機150のマイクロ波出力を制御する。発熱体20は、この駆動電圧制御によって昇温および降温制御される。 The thermometer (temperature measurement unit) 90, a radiation thermometer used here, measures the surface temperature of the heating element 20 at a predetermined time interval (e.g., several milliseconds). The thermometer controller 92 converts the measured temperature into a voltage and sends the voltage data to the controller 84. The controller (control unit) 84 controls the microwave output of the microwave oscillator 150 by sending a signal to the power supply unit 86 that controls the drive voltage of the microwave oscillator 150 based on the temperature-voltage conversion data. The heating element 20 is controlled to increase and decrease its temperature by this drive voltage control.

操作部82は、オペレータが発熱体の温度を設定するときに操作され、操作信号がコントローラ84へ送られる。ここでは、800℃以上の温度を設定することが可能である。 The operation unit 82 is operated by the operator when setting the temperature of the heating element, and an operation signal is sent to the controller 84. Here, it is possible to set a temperature of 800°C or higher.

図4は、マイクロ波加熱に伴うマイクロ波発振機150の駆動電力を時間経過とともに示したグラフである。図5は、マイクロ波加熱に伴う発熱体の温度を時間経過とともに示したグラフである。なお、図5では、マイクロ波発振機150がON状態になる前に数ミリボルト出力によって温度が先に上昇している。 Figure 4 is a graph showing the drive power of the microwave oscillator 150 with respect to microwave heating over time. Figure 5 is a graph showing the temperature of the heating element with respect to microwave heating over time. Note that in Figure 5, the temperature rises first due to the output of several millivolts before the microwave oscillator 150 turns on.

目標温度T0(ここでは1100℃)がオペレータによって設定されると、目標温度T0に応じたコントローラ84は、電源部86を制御してマイクロ波発振機150への電力を徐々に増加させる。図4に示すように、駆動開始から所定期間V1の間、電力の増加率は略一定である。この所定期間V1では、発熱体20の昇温速度(℃/sec)が略一定であり、30(℃/sec)以上の昇温速度で発熱体20の温度が上昇していく(図5のL1参照)。 When the target temperature T0 (here, 1100°C) is set by the operator, the controller 84 in accordance with the target temperature T0 controls the power supply unit 86 to gradually increase the power to the microwave oscillator 150. As shown in FIG. 4, the rate of increase in power is approximately constant during a predetermined period V1 from the start of operation. During this predetermined period V1, the heating rate (°C/sec) of the heating element 20 is approximately constant, and the temperature of the heating element 20 increases at a heating rate of 30 (°C/sec) or more (see L1 in FIG. 5).

発熱体20の温度が目標温度T0に近い温度T1(目標付近温度)に達すると、コントローラ84は、電力を低下させ、電力の増減を繰り返す電圧制御が行われる(図4の期間V2参照)。その結果、目標付近温度T1における電力が最大電力となり、これ以降、これより低い電力による電力制御が行われる。 When the temperature of the heating element 20 reaches a temperature T1 (near-target temperature) close to the target temperature T0, the controller 84 reduces the power and performs voltage control by repeatedly increasing and decreasing the power (see period V2 in FIG. 4). As a result, the power at the near-target temperature T1 becomes the maximum power, and thereafter, power control is performed at a lower power than this.

電力が増減している間、発熱体20の温度は期間V1と比べて緩やかな昇温速度で上昇し、漸近的に目標温度T0へ近づく(図5のL2参照)。発熱体20の温度が目標温度T0に到達すると、発熱体20の温度がその目標温度T0で維持されるように、電力を制御する。 While the power is being increased or decreased, the temperature of the heating element 20 rises at a slower rate than during period V1, and gradually approaches the target temperature T0 (see L2 in FIG. 5). When the temperature of the heating element 20 reaches the target temperature T0, the power is controlled so that the temperature of the heating element 20 is maintained at the target temperature T0.

発熱体20を降温させる場合、電力を徐々に低下させていく(図4の期間V3参照)。これにより、発熱体20は、略一定の降温速度(℃/sec)で低下していく。ここでは、30(℃/sec)以上の降温速度で温度低下していくように、電力を低下させていく。電力の低下率が略一定となることで、降温速度も略一定となる(図5のL3参照)。 When lowering the temperature of the heating element 20, the power is gradually reduced (see period V3 in FIG. 4). This causes the temperature of the heating element 20 to drop at a substantially constant rate of temperature drop (°C/sec). Here, the power is reduced so that the temperature drops at a rate of 30°C/sec or more. By keeping the rate of power reduction substantially constant, the rate of temperature drop also becomes substantially constant (see L3 in FIG. 5).

図6は、発熱体20の温度制御に関する制御ブロック図である。 Figure 6 is a control block diagram for controlling the temperature of the heating element 20.

操作部82では、目標温度(以下では、目標温度を“TT”とする)、その目標温度TTの維持時間TK、昇温率(昇温速度)TI、降温率(降温速度)TDが、オペレータによって設定される。放射温度計で測定された温度Tは、温度計コントローラ92において電圧TVに変換され、コントローラ84へ送られる。 In the operation unit 82, the operator sets the target temperature (hereinafter, the target temperature is referred to as "TT"), the maintenance time TK of the target temperature TT, the temperature increase rate (temperature increase speed) TI, and the temperature decrease rate (temperature decrease speed) TD. The temperature T measured by the radiation thermometer is converted to a voltage TV in the thermometer controller 92 and sent to the controller 84.

コントローラ84は、温度と駆動電圧との関係を制御するPID制御(図示せず)を実行する温度調節器84Aを備えている。温度調節器84Aは、コントローラ84に入力された温度(以下、目標温度という)の駆動電圧(以下、目標駆動電圧という)と所定時間間隔で測定される発熱体20の温度に応じた駆動電圧(以下、測定駆動電圧という)との差に基づき、駆動電圧制御信号である電源制御電圧MVを決定する。コントローラ84は、決定された電源制御電圧MVを電源部86へ送る。電源部86は、コントローラ84の制御によって駆動電圧QVをマイクロ秒で変化させていく。 The controller 84 is equipped with a temperature regulator 84A that executes PID control (not shown) to control the relationship between temperature and drive voltage. The temperature regulator 84A determines a power supply control voltage MV, which is a drive voltage control signal, based on the difference between a drive voltage (hereinafter referred to as a target drive voltage) for a temperature (hereinafter referred to as a target temperature) input to the controller 84 and a drive voltage (hereinafter referred to as a measured drive voltage) corresponding to the temperature of the heating element 20 measured at a predetermined time interval. The controller 84 sends the determined power supply control voltage MV to the power supply unit 86. The power supply unit 86 changes the drive voltage QV in microseconds under the control of the controller 84.

PID制御について具体的に述べると、P(比例定数)を用いて、現在温度と目標温度の差(目標駆動電圧と測定駆動電圧との差)に応じて出力(駆動電圧)を変化させる。また、P(比例定数)とともにI(積分定数)を用いて蓄熱容量を計算し、オーバーシュートとハンチングを抑える。外乱による急激な温度変化に対しては、D(微分定数)により駆動電圧を補正する。電源部86は、駆動電圧QVに応じた電力(W)をマイクロ波発振機150へ出力する。なお、温度調節器84Aは、最適な温度制御を行うため、事前のオートチューニングによってPIDの最適な定数を検出している。 To be more specific about PID control, P (proportional constant) is used to change the output (drive voltage) according to the difference between the current temperature and the target temperature (the difference between the target drive voltage and the measured drive voltage). In addition, I (integral constant) is used together with P (proportional constant) to calculate the heat storage capacity and suppress overshoot and hunting. For sudden temperature changes due to disturbances, D (differential constant) is used to correct the drive voltage. The power supply unit 86 outputs power (W) according to the drive voltage QV to the microwave oscillator 150. Note that the temperature regulator 84A detects the optimal PID constant by prior auto-tuning in order to perform optimal temperature control.

発熱体20を昇温させる時間帯では、温度調節器84Aは、目標温度TTと昇温率TIに基づいてPID制御を行う。温度調節器84Aは、電源部86に対する電源制御電圧MVを決定し、コントローラ84は、電源部86はマイクロ波発振機150に対して駆動電圧QV(電力)を変えていく。P(比例定数)は、設定された昇温率TIに応じて定められる。 During the time period when the heating element 20 is being heated, the temperature regulator 84A performs PID control based on the target temperature TT and the temperature rise rate TI. The temperature regulator 84A determines the power supply control voltage MV for the power supply unit 86, and the controller 84 changes the drive voltage QV (power) for the microwave oscillator 150. P (proportional constant) is determined according to the set temperature rise rate TI.

昇温した発熱体20の温度を維持する時間帯では、温度調節器84Aは、目標温度TTと温度維持時間TKに基づいてPID制御を行う。そして発熱体20を降温させる時間帯では、降温率TDに基づいてPID制御を行う。 During the time period in which the increased temperature of the heating element 20 is to be maintained, the temperature regulator 84A performs PID control based on the target temperature TT and the temperature maintenance time TK. During the time period in which the temperature of the heating element 20 is to be decreased, the temperature regulator 84A performs PID control based on the temperature decrease rate TD.

このように本実施形態によれば、マイクロ波発振機150の電力を制御することによって、発熱体20の昇温過程および降温過程において精密な温度コントロールを実現することができる。その結果、被加熱物に対する加熱も精密に行うことが可能となる。 In this manner, according to this embodiment, precise temperature control can be achieved during the heating and cooling processes of the heating element 20 by controlling the power of the microwave oscillator 150. As a result, precise heating of the object to be heated can also be achieved.

発熱体の昇温率は、カーボン粉粒体70Mの質量に依存し、質量が大きいと比例制御だけでは精密な温度制御が難しい。一方で、カーボン粉粒体70Mの放熱は早い。本実施形態では、加熱対象物であるカーボン粉粒体70Mの特性に応じて、温度調節器84AによるPID制御を行う。これにより、オーバーシュート、ハンチングを抑え、目標温度付近で漸近的に発熱体20の温度を上昇させることができるため、急激な昇温にも関わらず、意図しない温度の上下変化といった乱れもなく目標温度に効率よく到達することができる。 The rate of temperature rise of the heating element depends on the mass of the carbon powder 70M, and when the mass is large, precise temperature control is difficult using proportional control alone. On the other hand, the carbon powder 70M dissipates heat quickly. In this embodiment, PID control is performed by the temperature regulator 84A according to the characteristics of the carbon powder 70M, which is the object to be heated. This makes it possible to suppress overshooting and hunting and to increase the temperature of the heating element 20 asymptotically near the target temperature, so that despite a sudden temperature rise, the target temperature can be reached efficiently without disturbances such as unintended temperature fluctuations up and down.

また、駆動開始後、マイクロ波発振機150の電力を徐々に増加させていくことで、マイクロ波の吸収が安定した一定時間経過後に最大電力となり、反射波の発生を減少させ、マイクロ波発振機150の破損などを防ぐことができる。逆に、マイクロ波発振機150の電力を徐々に低下させていくことで、30(℃/sec)以上の降温速度で発熱体20の温度を下げることができる。 In addition, by gradually increasing the power of the microwave oscillator 150 after the start of operation, the power reaches maximum after a certain period of time when microwave absorption has stabilized, reducing the generation of reflected waves and preventing damage to the microwave oscillator 150. Conversely, by gradually decreasing the power of the microwave oscillator 150, the temperature of the heating element 20 can be reduced at a rate of 30 (°C/sec) or more.

以下、第2の実施形態に相当する実施例について説明する。 Below, we will explain an example that corresponds to the second embodiment.

実施例は、第2の実施形態に相当するマイクロ波加熱装置であり、外径6mm、内径4mm、管長60mmの発熱管に対し、充填率0.08でカーボン粉粒体を充填し、希ガスを1.4kPaで封入した。そして、球状の反射容器内で2.45GHzのマイクロ波を照射し、目標温度1100℃に設定して加熱実験を行った。加熱実験においては、実施形態同様にコントローラによって温度制御を行い、発熱管の表面温度測定には、測定波長900nmの放射温度計を用いた。 The example is a microwave heating device corresponding to the second embodiment, in which a heating tube with an outer diameter of 6 mm, an inner diameter of 4 mm, and a tube length of 60 mm was filled with carbon powder at a filling rate of 0.08, and rare gas was sealed in at 1.4 kPa. Then, a heating experiment was performed by irradiating a 2.45 GHz microwave in a spherical reflecting container and setting the target temperature to 1100°C. In the heating experiment, temperature control was performed by a controller as in the embodiment, and a radiation thermometer with a measurement wavelength of 900 nm was used to measure the surface temperature of the heating tube.

実験の結果、図5同様の曲線を描いた温度変化を確認することができ、発熱管20が30(℃/s)以上の昇温速度で昇温していることが分かった。また、目標温度付近で漸近的に温度が上昇し、目標温度到達後も図5のように目標温度を維持することが確認された。 As a result of the experiment, it was possible to confirm temperature changes that drew a curve similar to that shown in Figure 5, and it was found that the heating tube 20 was heating at a heating rate of 30 (°C/s) or more. It was also confirmed that the temperature rose asymptotically near the target temperature, and that the target temperature was maintained as shown in Figure 5 even after the target temperature was reached.

20 発熱管(発熱体)
30 被加熱物
40 反射容器
70 カーボン発熱材(発熱材)
70M カーボン粉粒体
84 コントローラ
90 温度計
100 マイクロ波加熱装置
150 マイクロ波発振機(マグネトロン)
20 Heating tube (heating element)
30 object to be heated 40 reflector container 70 carbon heating material (heating material)
70M Carbon powder 84 Controller 90 Thermometer 100 Microwave heating device 150 Microwave generator (magnetron)

Claims (10)

セラミックス、半導体、または食品以外の有機物を被加熱物とし、マイクロ波を照射する加熱装置であって、
マイクロ波を反射する反射容器と、
マイクロ波を吸収して発熱するカーボンを含む粉粒体からなる発熱材と、マイクロ波を透過し、前記発熱材が内部に充填される容器とを有し、前記反射容器内に設置される発熱体と、
前記発熱体の温度を測定する温度測定部とを備え、
前記被加熱物が、前記反射容器内において、前記容器から離れて設置され、
前記発熱材で生じる熱が、前記反射容器の空間領域を通じて前記被加熱物に伝わり、
30(℃/sec)以上の昇温速度で目標付近温度まで前記発熱体を昇温させ、目標付近温度に達すると、漸近的に目標温度へ近づくように前記発熱体を昇温させ、目標温度に達すると、前記発熱体の温度を目標温度で維持する前記発熱体の温度制御を、測定された温度に基づいて、マイクロ波を照射開始から連続的に前記発熱体に照射することによって行うことを特徴とする加熱装置。
A heating device that irradiates microwaves to ceramics, semiconductors, or organic materials other than food as objects to be heated,
A reflecting container that reflects microwaves;
A heating element including a powder containing carbon that absorbs microwaves and generates heat, and a container that transmits microwaves and is filled with the heating element, the heating element being installed in the reflecting container;
A temperature measuring unit for measuring a temperature of the heating element,
The object to be heated is placed in the reflecting container at a distance from the container,
The heat generated by the heat generating material is transferred to the object to be heated through the spatial region of the reflector container,
A heating device characterized in that the temperature of the heating element is increased to a temperature near a target temperature at a heating rate of 30 (°C/sec) or more, and when the temperature near the target temperature is reached, the heating element is increased to asymptotically approach the target temperature, and when the target temperature is reached, the temperature of the heating element is maintained at the target temperature by continuously irradiating the heating element with microwaves from the start of irradiation based on the measured temperature.
前記発熱体を、30(℃/sec)以上の降温速度で降温させることを特徴とする請求項1に記載の加熱装置。 The heating device according to claim 1, characterized in that the heating element is cooled at a rate of 30°C/sec or more. 前記発熱体へマイクロ波を照射するマグネトロンと、
前記マグネトロンの電力を制御する制御部とをさらに備え、
前記制御部が、前記マグネトロンの電力を制御することによって、30(℃/sec)以上の昇温速度で前記発熱体を昇温させることを特徴とする請求項1または2のいずれかに記載の加熱装置。
A magnetron that irradiates microwaves to the heating element;
A control unit for controlling the power of the magnetron,
3. The heating device according to claim 1, wherein the control unit controls the power of the magnetron to raise the temperature of the heating element at a heating rate of 30 (.degree. C./sec) or more.
前記制御部が、駆動開始から目標付近温度到達まで前記マグネトロンの電力を徐々に増加させていくことを特徴とする請求項3に記載の加熱装置。 The heating device according to claim 3, characterized in that the control unit gradually increases the power of the magnetron from the start of operation until the target temperature is reached. 前記制御部が、前記発熱体の目標付近温度到達に応じて電力を下げ、電力の増減を複数回繰り返すことを特徴とする請求項4に記載の加熱装置。 The heating device according to claim 4, characterized in that the control unit reduces the power when the heating element reaches a temperature close to the target temperature, and repeats increasing and decreasing the power multiple times. 前記制御部が、30(℃/sec)以上の降温速度で前記発熱体を降温させるとき、電力を徐々に下げていくことを特徴とする請求項2に記載の加熱装置。 The heating device according to claim 2, characterized in that the control unit gradually reduces the power when lowering the temperature of the heating element at a temperature drop rate of 30 (°C/sec) or more. 前記マグネトロンへの電力が100W以上であり、
目標温度が800℃以上であることを特徴とする請求項3乃至6のいずれかに記載の加熱装置。
The power to the magnetron is 100 W or more;
7. The heating device according to claim 3, wherein the target temperature is 800[deg.] C. or higher.
前記発熱材は、流動性のあるカーボン粉粒体からなり、
前記粉粒体の充填率が、0.05~0.2の範囲に定められていることを特徴とする請求項1乃至7のいずれかに記載の加熱装置。
The heat generating material is made of flowable carbon powder,
8. The heating device according to claim 1, wherein the packing rate of the powder or granular material is set in the range of 0.05 to 0.2.
前記発熱材に対して不活性な流体が、前記容器内に封入されることを特徴とする請求項1乃至8のいずれかに記載の加熱装置。 The heating device according to any one of claims 1 to 8, characterized in that a fluid inert to the heat generating material is sealed in the container. セラミックス、半導体、または食品以外の有機物を被加熱物とし、マイクロ波を吸収して発熱する、カーボンを含む粉粒体からなる発熱材と、マイクロ波を透過して前記発熱材を収容する容器とを有し、マイクロ波を反射する反射容器内に設置される発熱体に対し、マイクロ波を照射する加熱方法であって、
前記反射容器内において、前記被加熱物を、前記容器から離れて設置し、前記発熱材で生じる熱を、前記反射容器の空間領域を通じて前記被加熱物に伝え、
前記発熱体の温度を測定し、
30(℃/sec)以上の昇温速度で目標付近温度まで前記発熱体を昇温させ、目標付近温度に達すると、漸近的に目標温度へ近づくように前記発熱体を昇温させ、目標温度に達すると、前記発熱体の温度を目標温度で維持する前記発熱体の温度制御を、測定された温度に基づいて、マイクロ波を照射開始から連続的に前記発熱体に照射することによって行うことを特徴とする加熱方法。
A heating method for irradiating microwaves to a heating element that is placed in a reflecting container that reflects microwaves, the heating element being made of a powder containing carbon and absorbing microwaves to generate heat, the heating element being made of a powder containing carbon and absorbing microwaves to generate heat, the heating element being placed in a reflecting container that reflects microwaves , the method comprising the steps of:
The object to be heated is placed away from the container in the reflecting container, and heat generated by the heat generating material is transferred to the object to be heated through a spatial region of the reflecting container;
Measure the temperature of the heating element;
A heating method characterized in that the temperature of the heating element is increased to a temperature near a target temperature at a heating rate of 30 (°C/sec) or more, and when the temperature near the target temperature is reached, the heating element is increased to asymptotically approach the target temperature, and when the target temperature is reached, the temperature of the heating element is maintained at the target temperature by continuously irradiating the heating element with microwaves from the start of irradiation based on the measured temperature.
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