JP7630295B2 - Plasma processing placement unit and plasma processing apparatus - Google Patents

Description

Embodiments of the present invention relate to a plasma processing mounting section and a plasma processing apparatus.

Dry processes using plasma are used, for example, in the manufacture of microstructures. For example, in the manufacture of semiconductor devices, flat panel displays, photomasks, and the like, various plasma processes such as etching, ashing, and damage removal are carried out.

Plasma processing equipment for performing such plasma processing includes, for example, a chamber, an exhaust unit for reducing the pressure inside the chamber, a plasma generation unit for generating plasma inside the chamber, a gas supply unit for supplying a process gas to the area inside the chamber where the plasma is generated, a placement unit provided inside the chamber on which the workpiece is placed, and electrodes provided on the placement unit. (See, for example, Patent Document 1.)

Such plasma processing equipment uses the generated plasma to generate plasma products from the process gas, and processes the workpiece using radicals and ions contained in the plasma products. In this case, if an electrode is provided on the mounting section, it is possible to control, for example, the energy of ions incident on the workpiece. If the energy of ions can be controlled, it is possible to control, for example, physical processing using ions.

In recent years, the processing areas have become finer and the materials used more diverse, and there has been a demand for technology that can control the characteristics of plasma processing (e.g., processing rate, in-plane uniformity of processing, processing shape profile, etc.).

JP 2007-12663 A

The problem that the present invention aims to solve is to provide a plasma processing platform and a plasma processing apparatus that can control the characteristics of the plasma processing.

A plasma processing platform according to an embodiment is a platform used for plasma processing, comprising: an electrode;
a plurality of electrode plates disposed on the electrode;
Equipped with
A plurality of pins are provided on the upper surface of the electrode,
a recess into which each of the pins of the electrode is inserted is provided on one surface of the electrode plate ;
a first electrode plate provided on the electrode and provided on the other surface thereof with a plurality of first pins;
A second electrode plate provided on the first electrode plate has a surface facing the first electrode plate, the surface being provided with recesses into which the first pins are inserted.
A plasma processing platform according to another embodiment is a platform used for plasma processing, comprising:
An electrode;
a plurality of electrode plates disposed on the electrode;
Equipped with
A plurality of pins are provided on the upper surface of the electrode,
a recess into which each of the pins of the electrode is inserted is provided on one surface of the electrode plate;
The other surface of the electrode plate is provided with a plurality of first pins.

According to an embodiment of the present invention, a plasma processing platform and a plasma processing apparatus capable of controlling the characteristics of plasma processing are provided.

1 is a layout diagram illustrating a plasma processing apparatus according to an embodiment of the present invention; 11A and 11B are schematic cross-sectional views illustrating a mask ring storage portion. 1A is a schematic plan view of a mask ring, and FIG. 1B is a schematic side view of the mask ring. 5A and 5B are schematic cross-sectional views illustrating an electrode plate storage section. 1A is a schematic plan view of an electrode plate, and FIG. 1B is a schematic side view of the electrode plate. 1A is a schematic plan view of an electrode plate, and FIG. 1B is a schematic side view of the electrode plate. 1A is a schematic plan view of an electrode plate, and FIG. 1B is a schematic side view of the electrode plate. 1A is a schematic plan view illustrating a hand, and FIG. 1B is a schematic side view illustrating the hand. 10 is a schematic plan view illustrating an electrode plate placed on a hand. FIG. 11 is a schematic plan view illustrating the transfer of the electrode plate between a hand and a shelf in an electrode plate storage unit. FIG. 4 is a schematic cross-sectional view illustrating an example of a processing section. FIG. 4A and 4B are schematic perspective views of a mounting portion. 1A is a schematic plan view of an electrode, and FIG. 1B is a schematic side view of the vicinity of the upper surface of the electrode. 11 is a schematic plan view for illustrating the action of a pusher. FIG. 11 is a schematic plan view for illustrating the action of a pusher. FIG. 11 is a schematic plan view for illustrating the action of a pusher. FIG. 11 is a schematic plan view for illustrating the action of a pusher. FIG. 11 is a schematic plan view for illustrating the action of a pusher. FIG. 10A to 10C are schematic diagrams for illustrating the transfer of electrode plates. 10A to 10C are schematic diagrams for illustrating the transfer of electrode plates. 13A to 13C are schematic plan views for illustrating a transfer section according to another embodiment. 22 is a cross-sectional view of the transfer section taken along line BB in FIG. 21. 11A and 11B are schematic cross-sectional views illustrating a processing section according to another embodiment.

Below, an embodiment of the present invention will be illustrated with reference to the drawings. Note that in each drawing, similar components are given the same reference numerals and detailed explanations are omitted as appropriate.

FIG. 1 is a layout diagram illustrating a plasma processing apparatus 1 according to the present embodiment.
As shown in FIG. 1, the plasma processing apparatus 1 includes, for example, a controller 2, a storage unit 3, a transport unit 4, a load lock unit 5, a mask ring storage unit 6, an electrode plate storage unit 7, a transfer unit 8, and a processing unit 9.

The controller 2 has, for example, a calculation unit such as a CPU (Central Processing Unit) and a storage unit such as a memory. The controller 2 is, for example, a computer. The controller 2 controls the operation of each element provided in the plasma processing device 1 based on, for example, a control program stored in the storage unit.

The storage unit 3 stores the object to be treated 100 in a layered (multiple-tiered) configuration, for example. The storage unit 3 is, for example, a so-called pod or a front-opening carrier, such as a FOUP (Front-Opening Unified Pod). However, the storage unit 3 is not limited to the examples given, and may be anything capable of storing the object to be treated 100. At least one storage unit 3 may be provided.

The processing object 100 has a plate shape and contains, for example, silicon oxide (SiO ₂ ) as a main component. The processing object 100 can be made of, for example, quartz. The planar shape of the processing object 100 can be, for example, a rectangle. However, the material and shape of the processing object 100 are not limited to those exemplified.

The transport unit 4 is provided between the storage unit 3 and the load lock unit 5. The transport unit 4 transports and delivers the processing object 100 between the storage unit 3 and the load lock unit 5. In this case, the transport unit 4 transports and delivers the processing object 100 in an environment with a higher pressure (e.g., atmospheric pressure) than the pressure when performing plasma processing. The transport unit 4 is, for example, a transport robot having an arm that supports the processing object 100.

The load lock unit 5 is provided between the transport unit 4 and the transfer unit 8. The load lock unit 5 transfers the workpiece 100 between the transport unit 4 and the transfer unit 8, which have different atmospheric pressures. For this reason, the load lock unit 5 has a chamber 51, an exhaust unit 52, and a gas supply unit 53.

The chamber 51 has an airtight structure capable of maintaining an atmosphere at a reduced pressure below atmospheric pressure. An opening is provided in the side wall of the chamber 51 for loading and unloading the workpiece 100. Gate valves 51a1 and 51a2 are also provided for opening and closing the opening. One side wall of the chamber 51 is connected to the chamber 81 (corresponding to an example of the second chamber) of the transfer unit 8 via the gate valve 51a1. The other side wall of the chamber 51 is connected to the transfer unit 4 via the gate valve 51a2.

The exhaust unit 52 exhausts the inside of the chamber 51 so that the pressure inside the chamber 51 becomes approximately equal to the pressure inside the chamber 81 of the transfer unit 8. The exhaust unit 52 may have, for example, a turbo molecular pump (TMP) and a pressure control unit (APC: Auto Pressure Controller). The pressure control unit controls the internal pressure of the chamber 51 to a predetermined pressure based on the output of a pressure gauge (not shown) that detects the internal pressure of the chamber 51.

The gas supply unit 53 supplies gas to the inside of the chamber 51 so that the pressure inside the chamber 51 is approximately equal to the pressure in the transport unit 4. The gas supplied can be, for example, air or nitrogen gas.

The mask ring storage unit 6 (chamber 61) is connected to a transfer unit 8 (chamber 81) which will be described later.
2A and 2B are schematic cross-sectional views illustrating the mask ring housing portion 6. FIG.
2A shows a case where a shelf 62 (described later) is at the upper end, and FIG 2B shows a case where the shelf 62 is at the lower end.
2A and 2B, the mask ring storage section 6 stores a plurality of mask rings 101 in a stacked (multi-tiered) configuration. The mask rings 101 will be described later.
The mask ring storage unit 6 may be provided with, for example, a chamber 61 , a shelf 62 , and a lift unit 63 .

The chamber 61 has an airtight structure capable of maintaining an atmosphere at a reduced pressure lower than atmospheric pressure. An opening 61a is provided in the side wall of the chamber 61 for loading and unloading the mask ring 101. A gate valve 61b is also provided for opening and closing the opening 61a. The chamber 61 is connected to the chamber 81 of the transfer unit 8 via the gate valve 61b. The gate valve 61b can be omitted. However, if the gate valve 61b is provided, the movement of particles and the like between the mask ring storage unit 6 (chamber 61) and the transfer unit 8 (chamber 81) can be suppressed.

The shelf 62 is provided inside the chamber 61. For example, the shelf 62 has multiple support parts 62a arranged at a predetermined distance in the lifting direction (up and down direction). For example, one mask ring 101 can be placed on one support part 62a. If multiple support parts 62a are provided, multiple mask rings 101 or multiple types of mask rings 101 can be stored inside the mask ring storage part 6 (chamber 61).

Each support portion 62a has a pair of support plates 62a1 and a positioning portion 62a2 (see, for example, FIG. 10 described later). The pair of support plates 62a1 are arranged horizontally at a predetermined interval. The pair of support plates 62a1 are provided with recesses 62a1a for holding the mask ring 101. The opening of the recess 62a1a can be tapered. In this way, the mask ring 101 can be guided into the recess 62a1a. Therefore, even if there is a positional misalignment when placing the mask ring 101 on the pair of support plates 62a1, it is easy to store the mask ring 101 inside the recess 62a1a.

The positioning portion 62a2 is provided between a pair of support plates 62a1. The positioning portion 62a2 is provided with a pin 102a6 (corresponding to an example of a third pin) that is inserted into a recess 101c (described later) provided in the mask ring 101. If the pin 102a6 that is inserted into the recess 101c is provided, it is possible to prevent the position of the mask ring 101 placed on the support portion 62a from shifting. Details regarding the recess 101c and the pin 102a6 will be described later.

The lifting unit 63 moves the shelf 62 in the lifting direction. For example, as shown in FIGS. 2(a) and (b), the lifting unit 63 moves the shelf 62 in the lifting direction so that the support portion 62a that transfers the mask ring 101 is located at the position of the opening 61a. The lifting unit 63 can have, for example, a guide mechanism that guides the movement of the shelf 62, a drive mechanism such as a servo motor, and a transmission mechanism such as a ball screw that transmits power between the guide mechanism and the drive mechanism.

The lifting section 63 may be omitted. For example, a fixed shelf 62 may be provided inside the chamber 61. However, if the lifting section 63 is provided, the support section 62a that performs the transfer can be moved to the position of the opening 61a. This allows the size of the opening 61a to be reduced. This makes it possible to suppress the generation of particles and the like between the mask ring storage section 6 (chamber 61) and the transfer section 8 (chamber 81) and the movement of the generated particles and the like. In addition, the size of the corresponding opening of the transfer section 8 that is connected to the mask ring storage section 6 via the gate valve 61b can also be reduced. This makes it possible to suppress the transfer section 8 from becoming larger.

Next, the mask ring 101 will be described.
The mask ring 101 is provided on electrode plates 102 a to 102 c provided on a mounting portion 97 (to be described later), and supports the object 100 to be processed.
FIG. 3A is a schematic plan view of the mask ring 101. FIG.
FIG. 3B is a schematic side view of the mask ring 101.
3(a) and (b), the mask ring 101 has, for example, a disk shape. For example, the planar dimensions of the mask ring 101 can be approximately the same as the planar dimensions of the electrode plates 102a to 102c described below. For example, the thickness of the mask ring 101 can be approximately the same as the thickness of the treatment object 100. The mask ring 101 is formed, for example, from a material that is resistant to plasma treatment. The mask ring 101 can be formed, for example, from quartz.

A hole 101a is provided in the center of the mask ring 101, penetrating the thickness direction. The object to be treated 100 is stored inside the hole 101a. For example, the hole 101a is provided to support the object to be treated 100 and to align the object to be treated 100. Therefore, multiple types of mask rings 101 can be provided according to the planar shape and planar dimensions of the object to be treated 100.

One surface of the mask ring 101 is provided with recesses 101b and 101c. The recesses 101b and 101c are provided to align the mask ring 101 with the electrode plates 102a to 102c, which will be described later. Therefore, when the mask ring 101 is placed on the electrode plates 102a to 102c, the pin 102a5 provided on the electrode plates 102a to 102c is inserted into the recess 101b, and the pin 102a6 is inserted into the recess 101c. The edges of the openings of the recesses 101b and 101c can be tapered. In this way, the pins 102a5 and 102a6 can be guided into the recesses 101b and 101c. Therefore, even if there is misalignment when placing the mask ring 101 on the electrode plates 102a to 102c, it is easy to insert the pins 102a5 and 102a6 into the recesses 101b and 101c, and therefore to align the position of the mask ring 101 with the position of the electrode plates 102a to 102c.

Next, returning to FIG. 1, the electrode plate storage section 7 will be described.
As shown in FIG. 1, the electrode plate storage unit 7 (chamber 71 (corresponding to an example of a third chamber)) is connected to a transfer unit 8 (chamber 81) which will be described later.
4A and 4B are schematic cross-sectional views illustrating the electrode plate storage portion 7. FIG.
4A shows the case where the shelf 72 is at the upper end, and FIG 4B shows the case where the shelf 72 is at the lower end.
The electrode plate storage section 7 can store a plurality of electrode plates. For example, as shown in Figures 4(a) and (b), the electrode plate storage section 7 stores electrode plates 102a to 102c in a stacked (multi-tiered) configuration. The electrode plates 102a to 102c will be described later.

The electrode plate storage section 7 may be provided with, for example, a chamber 71, a shelf 72, and a lifting section 73 (corresponding to an example of a third lifting mechanism). The shelf 72 is provided inside the chamber 71 and supports the electrode plates 102a to 102c. The lifting section 73 raises and lowers the shelf 72. The shelf 72 has multiple support sections 62a in the lifting direction that can support one electrode plate. Each of the multiple support sections 62a has a pin 102a6 (corresponding to an example of a third pin) that can be inserted into a recess 101c provided in the electrode plate.

In this case, the configuration of chamber 71 may be similar to the configuration of chamber 61 described above. The configuration of shelf 72 may be similar to the configuration of shelf 62 described above. The configuration of lifting unit 73 may be similar to the configuration of lifting unit 63 described above.
For example, two sets of the above-mentioned chamber 61, shelf 62, and lifting section 63 can be provided, one of which can be used as a mask ring storage section 6 for storing the mask ring 101, and the other can be used as an electrode plate storage section 7 for storing the electrode plates 102a to 102c.
Therefore, a detailed description of the configuration of the electrode plate storage section 7 will be omitted.

Next, the electrode plates 102a to 102c will be described. Note that, in the following, three types of electrode plates 102a to 102c will be described as an example, but the type of electrode plate may be one or more. In other words, at least one electrode plate is provided on the electrode 97a of the mounting portion 97, which will be described later.

FIG. 5A is a schematic plan view of the electrode plate 102a.
FIG. 5B is a schematic side view of the electrode plate 102a.
5(a) and (b), the electrode plate 102a is, for example, disk-shaped. For example, the planar dimensions of the electrode plate 102a can be approximately the same as the planar dimensions of the electrode 97a of the mounting portion 97 described below. The electrode plate 102a mounted on the electrode 97a functions as an electrode. For this reason, the electrode plate 102a can be made of a conductive material such as a metal. For example, the material of the electrode plate 102a can be the same as the material of the electrode 97a.

The central portion of the electrode plate 102a is provided with a number of holes 102a1 penetrating the thickness direction. The holes 102a1 are provided to allow lift pins 98a1 (described later) to pass through in order to transfer the workpiece 100. Considering the stability of the position of the workpiece 100 when transferring the workpiece 100, it is preferable to provide three or more holes 102a1 at equal intervals on the circumference.

Outside the area of the electrode plate 102a where the holes 102a1 are provided, a number of holes 102a2 are provided penetrating the thickness direction. The holes 102a2 are provided to allow lift pins 98a2, which will be described later, to pass through in order to transfer the mask ring 101. Considering the stability of the position of the mask ring 101 when transferring the mask ring 101, it is preferable to provide three or more holes 102a2 at equal intervals on the circumference.

Outside the area of the electrode plate 102a where the holes 102a1 are provided, a plurality of holes 102a3 are provided penetrating the thickness direction. The holes 102a3 are provided to allow lift pins 98a2, which will be described later, to pass through in order to transfer the electrode plate 102c. Considering the stability of the position of the electrode plate 102c when transferring the electrode plate 102c, it is preferable to provide three or more holes 102a3 at equal intervals on the circumference.

Outside the area of the electrode plate 102a where the holes 102a1 are provided, a plurality of holes 102a4 are provided penetrating the thickness direction. The holes 102a4 are provided to allow lift pins 98a2, which will be described later, to pass through in order to transfer the electrode plate 102b. Considering the stability of the position of the electrode plate 102b when transferring the electrode plate 102b, it is preferable to provide three or more holes 102a4 at equal intervals on the circumference.

One surface of the electrode plate 102a can be provided with recesses that are the same as the recesses 101b and 101c provided in the mask ring 101. In a plan view, the positions of the recesses 101b and 101c provided in the electrode plate 102a can be approximately the same as the positions of the recesses 101b and 101c provided in the mask ring 101. The recesses 101b and 101c are provided to align the electrode plate 102a with the electrode 97a, which will be described later. Therefore, when the electrode plate 102a is placed on the electrode 97a, the pin 102a5 provided on the electrode 97a is inserted into the recess 101b, and the pin 102a6 is inserted into the recess 101c.

The other surface of the electrode plate 102a is provided with pins 102a5 and 102a6 (corresponding to an example of a first pin). In a plan view, the positions of the pins 102a5 and 102a6 can be approximately the same as the positions of the recesses 101b and 101c provided in the mask ring 101. The pins 102a5 and 102a6 are provided to align the electrode plate 102a with the electrode plate 102b or the electrode plate 102c. Therefore, the pin 102a5 is inserted into the recess 101b provided in the electrode plates 102b and 102c. The pin 102a6 is inserted into the recess 101c provided in the electrode plates 102b and 102c.

The tips of the pins 102a5 and 102a6 can be tapered. In this way, the pins 102a5 and 102a6 can be guided into the recesses 101b and 101c. Even if there is a misalignment when placing the electrode plate 102b or electrode plate 102c on the electrode plate 102a, it is easy to insert the pins 102a5 and 102a6 into the recesses 101b and 101c, and therefore to align the position of the electrode plate 102b or electrode plate 102c with the position of the electrode plate 102a.

FIG. 6A is a schematic plan view of the electrode plate 102b.
FIG. 6B is a schematic side view of the electrode plate 102b.
6(a) and (b), the electrode plate 102b is, for example, disk-shaped. For example, the planar dimensions of the electrode plate 102b can be approximately the same as the planar dimensions of the electrode 97a of the mounting portion 97 described below. The electrode plate 102b mounted on the electrode 97a functions as an electrode. For this reason, the electrode plate 102b can be made of a conductive material such as a metal. For example, the material of the electrode plate 102b can be the same as the material of the electrode 97a.

Similar to the electrode plate 102a described above, the electrode plate 102b also has multiple holes 102a1 to 102a3. However, the electrode plate 102b does not have multiple holes 102a4. Therefore, the electrode plate 102b can be lifted by the lift pins 98a2 protruding from the multiple holes 102a4 of the electrode plate 102a provided below the electrode plate 102b. If the electrode plate 102b can be lifted, the hand 82a of the transfer unit 8 described later can be inserted below the electrode plate 102b, so that the electrode plate 102b can be transferred.

One surface of the electrode plate 102b is provided with recesses 101b and 101c, similar to the electrode plate 102a. In a plan view, the positions of the recesses 101b and 101c provided in the electrode plate 102b can be substantially the same as the positions of the recesses 101b and 101c provided in the mask ring 101. The recesses 101b and 101c are provided to align the electrode plate 102b with the electrode 97a, which will be described later, or with the electrode plate 102a.

The other surface of electrode plate 102b is provided with pins 102a5 and 102a6 (corresponding to an example of a first pin) in the same manner as electrode plate 102a. In a plan view, the positions of pins 102a5 and 102a6 can be approximately the same as the positions of recesses 101b and 101c provided in mask ring 101. Pins 102a5 and 102a6 are provided to align electrode plate 102b with electrode plate 102c or mask ring 101.

FIG. 7A is a schematic plan view of the electrode plate 102c.
FIG. 7B is a schematic side view of the electrode plate 102c.
7A and 7B, the electrode plate 102c has, for example, a disk shape. For example, the planar dimensions of the electrode plate 102c can be approximately the same as the planar dimensions of the electrode 97a of the mounting portion 97 described later. The electrode plate 102c mounted on the electrode 97a functions as an electrode. For this reason, the electrode plate 102c can be made of a conductive material such as a metal. For example, the material of the electrode plate 102c can be the same as the material of the electrode 97a.

Similar to the electrode plate 102a described above, the electrode plate 102c also has a plurality of holes 102a1, 102a2. However, the electrode plate 102c does not have a plurality of holes 102a3, 102a4. Therefore, the electrode plate 102c can be lifted by the lift pins 98a2 protruding from the plurality of holes 102a3 of the electrode plate 102a or the electrode plate 102b provided below the electrode plate 102c. If the electrode plate 102c can be lifted, the hand 82a of the transfer unit 8 described later can be inserted below the electrode plate 102c, so that the electrode plate 102c can be transferred.

One surface of the electrode plate 102c is provided with recesses 101b and 101c, similar to the electrode plate 102a. In a plan view, the positions of the recesses 101b and 101c provided in the electrode plate 102c can be substantially the same as the positions of the recesses 101b and 101c provided in the mask ring 101. The recesses 101b and 101c are provided to align the electrode plate 102c with the electrode plate 102a or the electrode plate 102b.

The other surface of the electrode plate 102c is provided with pins 102a5 and 102a6 (corresponding to an example of a first pin) in the same manner as the electrode plate 102a. In a plan view, the positions of the pins 102a5 and 102a6 can be approximately the same as the positions of the recesses 101b and 101c provided in the mask ring 101. The pins 102a5 and 102a6 are provided to align the electrode plate 102c with the mask ring 101.

When two types of electrode plates are placed on top of the electrode 97a, the electrode plate placed on the electrode 97a described later is called the first electrode plate, and the electrode plate placed on the first electrode plate is called the second electrode plate. For example, when the electrode plate 102a is placed on the electrode 97a and the electrode plate 102b or the electrode plate 102c is placed on the electrode plate 102a, the electrode plate 102a becomes the first electrode plate, and the electrode plate 102b or the electrode plate 102c becomes the second electrode plate. Alternatively, when the electrode plate 102b is placed on the electrode 97a and the electrode plate 102c is placed on the electrode plate 102b, the electrode plate 102b becomes the first electrode plate, and the electrode plate 102c becomes the second electrode plate.

As described above, a plurality of pins 102a5, 102a6 are provided on one surface of the first electrode plate. The surface of the second electrode plate provided on the first electrode plate, facing the first electrode plate, is provided with recesses 101b, 101c into which the plurality of pins 102a5, 102a6 are inserted, respectively.

The planar shape of the electrode plates 102a to 102c can be approximately circular. The planar dimensions of the electrode plates 102a to 102c can be approximately the same.

There is no particular limit to the thickness of the electrode plates 102a to 102c, so long as they can pass through the opening 91b of the chamber 91 (corresponding to an example of the first chamber) of the processing section 9, which will be described later. In addition, the thicknesses of the electrode plates 102a to 102c may be the same or different.

Returning to FIG. 1, the transfer unit 8 will now be described.
As shown in FIG. 1, the transfer unit 8 is connected to the load lock unit 5 , the mask ring storage unit 6 , the electrode plate storage unit 7 , and the processing unit 9 .
The delivery section 8 has a chamber 81 , a transfer section 82 , an exhaust section 83 , and a gas supply section 84 .

The chamber 81 has an airtight structure capable of maintaining an atmosphere at a reduced pressure lower than atmospheric pressure. The transfer unit 82 is provided inside the chamber 81.
The transport unit 82 transfers and transports the processing object 100 between the processing unit 9 and the load lock unit 5. The transport unit 82 also transfers and transports the mask ring 101 between the processing unit 9 and the mask ring storage unit 6. The transport unit 82 also transfers and transports the electrode plates 102a to 102c between the processing unit 9 and the electrode plate storage unit 7.
For example, the transport unit 82 may be a transport robot (eg, an articulated robot) having a hand 82a that supports the workpiece 100, the mask ring 101, and the electrode plates 102a to 102c.

FIG. 8A is a schematic plan view illustrating the hand 82a.
FIG. 8B is a schematic side view illustrating the hand 82a.
As shown in Figures 8(a) and (b), the hand 82a is provided with a recess 82a1 (corresponding to an example of a second support portion) for supporting the mask ring 101 and the electrode plates 102a to 102c, and a recess 82a2 (corresponding to an example of a first support portion) for supporting the workpiece 100.

The hand 82a is also provided with a pin 102a5 (corresponding to an example of a second pin). When the mask ring 101 and the electrode plates 102a to 102c are placed on the hand 82a, the pin 102a5 on the hand 82a is inserted into the recess 101b provided on them. This makes it possible to determine the positions of the mask ring 101 and the electrode plates 102a to 102c relative to the hand 82a. It is also possible to prevent the positions of the mask ring 101 and the electrode plates 102a to 102c from shifting during transport.

FIG. 9 is a schematic plan view illustrating the electrode plate 102a placed on the hand 82a.
9, the holes 102a1 to 102a4 do not overlap with the hand 82a in a plan view, which makes it possible to prevent interference between the lift pins 98a1 and 98a2 and the hand 82a when the workpiece 100, the mask ring 101, and the electrode plates 102a to 102c are transferred between the electrode 97a and the hand 82a or when they are transported.

FIG. 10 is a schematic plan view illustrating the transfer of the electrode plate 102 a between the hand 82 a and the shelf 62 of the electrode plate storage unit 7 .
The electrode plates 102b, 102c are transferred between the hand 82a and the shelf 62 of the electrode plate storage unit 7 in the same manner. The mask ring 101 is transferred between the hand 82a and the shelf 62 of the mask ring storage unit 6 in the same manner.

As shown in FIG. 10, the hand 82a can be inserted between the pair of support plates 62a1, so that the hand 82a can be raised to receive the electrode plate 102a (electrode plates 102b, 102c, mask ring 101) placed on the pair of support plates 62a1. The hand 82a can be lowered to place the supported electrode plate 102a (electrode plates 102b, 102c, mask ring 101) on the pair of support plates 62a1. Although the case where the hand 82a is raised and lowered has been described, the shelf 62 (pair of support plates 62a1) may also be raised and lowered by the lifting unit 63.

As shown in FIG. 1, the exhaust unit 83 reduces the pressure inside the chamber 81 to a predetermined pressure. The exhaust unit 83 can be connected to the bottom of the chamber 81, for example, via a pressure control unit (APC). The exhaust unit 83 can be, for example, similar to the exhaust unit 52 described above.

The gas supply unit 84 supplies gas to the inside of the chamber 81 via a flow control unit. The flow control unit may be, for example, a mass flow controller (MFC). The gas supplied to the inside of the chamber 81 may be, for example, a gas that is unlikely to react with the workpiece 100 or elements exposed inside the chamber 81. For example, the gas may be a rare gas such as nitrogen gas or argon gas, or a mixture of these.

The treatment section 9 performs plasma treatment on the treatment object 100 in an atmosphere reduced in pressure below atmospheric pressure.
The processing unit 9 may be, for example, a plasma processing device such as a plasma etching device or a plasma ashing device. In this case, the method of generating plasma is not particularly limited, and may be, for example, a device that generates plasma using high frequency waves or microwaves. However, the type of plasma processing device and the method of generating plasma are not limited to those exemplified. In other words, the processing unit 9 may be any device that has an electrode that controls the energy of ions incident on the processing object 100.

The number of processing units 9 is also not particularly limited. At least one processing unit 9 needs to be provided. When multiple processing units 9 are provided, the same type of plasma processing device can be provided, or different types of plasma processing devices can be provided. When multiple plasma processing devices of the same type are provided, the processing conditions can be different for each device, or the processing conditions can be the same for each device.

FIG. 11 is a schematic cross-sectional view illustrating one example of the processing section 9. As shown in FIG.
The processing unit 9 illustrated in Fig. 11 is an inductively coupled plasma processing apparatus, which is an example of a plasma processing apparatus that generates a plasma product from a process gas G using plasma P excited and generated by high-frequency energy, and processes an object 100 to be processed.

As shown in FIG. 11, the processing unit 9 includes, for example, a chamber 91, an antenna 92, a high-frequency power supply 93, a high-frequency power supply 94, a gas supply unit 95, an exhaust unit 96, a placement unit 97, and a transfer unit 98.

The chamber 91 has a mounting portion 97 provided therein, and performs plasma processing on the workpiece 100. The chamber 91 has an airtight structure capable of maintaining an atmosphere at a reduced pressure below atmospheric pressure. A transmission window 91a is provided at the top of the chamber 91 so as to be airtight. The transmission window 91a is plate-shaped and can be formed from a dielectric material such as quartz.

An opening 91b is provided on the side wall of the chamber 91 for loading and unloading the workpiece 100. A gate valve 91c is also provided to open and close the opening 91b. The chamber 91 is connected to the chamber 81 of the transfer unit 8 via the gate valve 91c.

The antenna 92 supplies high-frequency energy (electromagnetic energy) to a region inside the chamber 91 where plasma P is generated. For example, the antenna 92 supplies high-frequency energy to the inside of the chamber 91 through the transmission window 91a. Plasma P is generated by the high-frequency energy supplied inside the chamber 91.

The high frequency power supply 93 is electrically connected to the antenna 92. The high frequency power supply 93 is a power supply for generating the plasma P. The high frequency power supply 93 generates a high frequency discharge inside the chamber 91 to generate the plasma P. The high frequency power supply 93 applies high frequency power having a frequency of about 100 KHz to 100 MHz to the antenna 92. In addition, a matching box can be provided between the high frequency power supply 93 and the antenna 92 to match the impedance on the high frequency power supply 93 side with the impedance on the plasma P side.
In this embodiment, the antenna 92 and the high frequency power source 93 constitute a plasma generating unit that generates the plasma P.

The high frequency power supply 94 is electrically connected to an electrode 97a provided on the mounting portion 97. The high frequency power supply 94 controls the energy of ions drawn into the workpiece 100 placed on the mounting portion 97. The high frequency power supply 94 applies high frequency power having a relatively low frequency (e.g., 13.56 MHz or less) suitable for drawing in ions to the electrode 97a, which will be described later. In addition, a matching box can be provided between the high frequency power supply 94 and the electrode 97a to match the impedance of the high frequency power supply 94 side and the impedance of the plasma P side.

The gas supply unit 95 supplies process gas G to an area inside the chamber 91 where plasma P is generated. The gas supply unit 95 may also have a flow rate control unit that controls the flow rate of the process gas G. The flow rate control unit may be, for example, a mass flow controller (MFC).

The process gas G is appropriately selected depending on the type of process and the material of the processing surface of the processing object 100. For example, in the case of an etching process, the process gas G may be a gas containing fluorine atoms such as _CF4 or _CF3 so that highly reactive radicals are generated. In this case, the process gas G may be, for example, only a gas containing fluorine atoms, or a mixed gas of a gas containing fluorine atoms and a rare gas.

The exhaust unit 96 reduces the pressure inside the chamber 91 to a predetermined pressure. The exhaust unit 96 can include, for example, a turbo molecular pump (TMP) and a pressure control unit (APC).

The mounting portion 97 is provided inside the chamber 91. The object to be treated 100 is placed on the mounting portion 97.
The mounting portion 97 includes, for example, an electrode 97 a , electrode plates 102 a to 102 c , and a mask ring 101 .
The electrode 97a may be provided, for example, on the bottom surface of the chamber 91. The electrode 97a may be, for example, cylindrical and made of a conductive material such as a metal.

Here, if the distance between the antenna 92 (transmission window 91a) and the mounting portion 97 (electrode 97a) is changed, the characteristics of the plasma processing (e.g., processing rate, in-plane uniformity of processing, profile of processed shape, etc.) are affected. This means that the characteristics of the plasma processing can be controlled by changing the distance between the antenna 92 (transmission window 91a) and the mounting portion 97 (electrode 97a).

In this case, if the electrode 97a is raised and lowered by the lifting device to change the distance between the antenna 92 (transmission window 91a) and the mounting portion 97 (electrode 97a), particles may be generated inside the chamber 91.
Furthermore, if a member is attached between the transmission window 91a and the upper portion of the chamber inside the chamber 91 to change the distance between the antenna 92 (transmission window 91a) and the mounting portion 97 (electrode 97a), a member of approximately the same size as the transmission window 91a is required. A member of such a size cannot pass through the opening 91b of the chamber 91. Therefore, when attaching or removing a member, disassembly, assembly, adjustment, etc. of the processing portion 9 is required.

According to the findings of the present inventors, an electrode plate having a thickness comparable to that of the object to be treated 100 and a planar dimension comparable to that of the electrode 97a can pass through the opening 91b of the chamber 91.
Therefore, in the plasma processing apparatus 1 according to the present embodiment, an appropriate electrode plate is selected according to the processing conditions of the plasma processing, and the selected electrode plate is placed on the electrode 97a. For example, when performing the plasma processing, at least one of the electrode plates 102a to 102c is carried into the chamber 91 and placed on the electrode 97a (stacked on the electrode 97a). Also, the mask ring 101 is carried into the chamber 91 and placed on the electrode plate.

In this way, generation of particles inside the chamber 91 can be suppressed when changing the distance between the antenna 92 (transmission window 91a) and the mounting portion 97 (electrode 97a). In addition, since the electrode plates 102a to 102c can be carried in and out through the opening 91b of the chamber 91, there is no need to disassemble, assemble, or adjust the processing portion 9 when changing the distance between the antenna 92 (transmission window 91a) and the mounting portion 97 (electrode 97a).

12A and 12B are schematic perspective views of the placement portion 97. FIG.
12A, when the electrode plate 102c is selected, the electrode plate 102c is placed on the electrode 97a, and the mask ring 101 is placed on the electrode plate 102c. That is, the electrode plate 102c and the mask ring 101 are stacked on the electrode 97a. The same applies when the electrode plate 102a or the electrode plate 102b is selected.

For example, as shown in FIG. 12(b) and FIG. 11, when electrode plates 102a to 102c are selected, electrode plate 102a is placed on electrode 97a, electrode plate 102b is placed on electrode plate 102a, electrode plate 102c is placed on electrode plate 102b, and mask ring 101 is placed on electrode plate 102c. In other words, electrode plates 102a to 102c and mask ring 101 are stacked on electrode 97a.

FIG. 13A is a schematic plan view of the electrode 97a.
FIG. 13B is a schematic side view of the vicinity of the upper surface of the electrode 97a.
As described above, the electrode plates 102a to 102c and the mask ring 101 are placed on the electrode 97a in a stacked manner. Therefore, as shown in Fig. 13A, the electrode 97a is provided with a hole 97a1 through which the lift pin 98a1 is inserted and holes 97a2 to 97a5 through which the lift pin 98a2 is inserted. The holes 97a1 to 97a5 penetrate the electrode 97a in the thickness direction.

A plurality of holes 97a1 are provided in the center of the electrode 97a. Lift pins 98a1, described below, are inserted into the plurality of holes 97a1 to transfer the workpiece 100 to be treated. The number, arrangement, and cross-sectional dimensions of the plurality of holes 97a1 can be approximately the same as the plurality of holes 102a1 provided in the electrode plates 102a to 102c. In other words, in a plan view, the plurality of holes 97a1 provided in the electrode 97a overlap with the plurality of holes 102a1 provided in the electrode plates 102a to 102c.

Outside the region of the electrode 97a where the plurality of holes 97a1 are provided, a plurality of holes 97a2 to 97a5 are provided.
Lift pins 98a2, which will be described later, are inserted into the holes 97a2 for transferring the mask ring 101. The number, arrangement, and cross-sectional dimensions of the holes 97a2 can be approximately the same as those of the holes 102a2 provided in the electrode plates 102a to 102c. That is, in a plan view, the holes 97a2 provided in the electrode 97a overlap with the holes 102a2 provided in the electrode plates 102a to 102c.

Lift pins 98a2, described below, are inserted into the holes 97a3 to transfer the electrode plate 102c. The number, arrangement, and cross-sectional dimensions of the holes 97a3 can be approximately the same as the holes 102a3 provided in the electrode plates 102a and 102b. That is, in a plan view, the holes 97a3 provided in the electrode 97a overlap with the holes 102a3 provided in the electrode plates 102a and 102b.

Lift pins 98a2, described later, are inserted into the holes 97a4 to transfer the electrode plate 102b. The number, arrangement, and cross-sectional dimensions of the holes 97a4 can be approximately the same as those of the holes 102a4 provided in the electrode plate 102a. That is, in a plan view, the holes 97a4 provided in the electrode 97a overlap with the holes 102a4 provided in the electrode plate 102a.

Lift pins 98a2 (described later) are inserted into the holes 97a5 to transfer the electrode plate 102a.

Also, as shown in Figs. 13(a) and (b), the upper surface of the electrode 97a can be provided with pins that are the same as the pins 102a5 and 102a6 provided on the electrode plates 102a to 102c. In plan view, the positions of the pins 102a5 and 102a6 provided on the upper surface of the electrode 97a can be approximately the same as the positions of the recesses 101b and 101c provided on the electrode plates 102a to 102c. That is, the pins 102a5 and 102a6 are provided to align the electrode 97a with the electrode plate placed on the electrode 97a. Therefore, the pin 102a5 is inserted into the recess 101b provided in the electrode plate placed on the electrode 97a. The pin 102a6 is inserted into the recess 101c provided in the electrode plate placed on the electrode 97a.

The transfer unit 98 transfers the workpiece 100 , the electrode plates 102 a to 102 c , and the mask ring 101 between the placement unit 97 and the hand 82 a of the transfer unit 8 .
As shown in FIG. 11, the transfer unit 98 can be provided, for example, outside the chamber 91 .
The transfer unit 98 can have, for example, a plurality of lift pins 98a1, 98a2, a plurality of seal units 98b, a pusher 98c, and a drive unit 98d.

The plurality of lift pins 98a1, 98a2 are each capable of being raised and lowered individually.
The plurality of lift pins 98 a 1 are provided for transferring the object 100 to be processed.
The number and arrangement of the multiple lift pins 98a1 are substantially the same as the multiple holes 97a1 provided in the electrode 97a and the multiple holes 102a1 provided in the electrode plates 102a to 102c. Therefore, the lift pins 98a1 can push up the workpiece 100 through the holes 97a1 and the holes 102a1.
The lift pins 98a1 are provided with flanges at their ends opposite to the ends used for transferring the object 100 to be processed.

The plurality of lift pins 98a2 are provided for transferring the electrode plates 102a to 102c and the mask ring 101.
The number and arrangement of the multiple lift pins 98a2 are approximately the same as the multiple holes 97a2 to 97a5 provided in the electrode 97a and the multiple holes 102a2 to 102a4 provided in the electrode plates 102a to 102c. Therefore, the lift pins 98a2 can push up the electrode plates 102a to 102c and the mask ring 101 through the holes 97a2 to 97a5 and the holes 102a2 to 102a4.
The ends of the plurality of lift pins 98a2 opposite to the ends used for transferring the electrode plates 102a to 102c and the mask ring 101 are provided with flanges.

In FIG. 11, reference numeral 98a1 is written in parentheses next to reference numeral 98a2. Lift pin 98a1 is closer to the center of electrode 97a than lift pin 98a2. However, for the sake of simplicity, it is written together with reference numeral 98a2.

The seal portion 98b is provided on each of the multiple lift pins 98a1, 98a2. The multiple lift pins 98a1, 98a2 are exposed to the atmosphere inside the chamber 91. Therefore, the seal portion 98b hermetically seals between the atmosphere inside the chamber 91, which is lower than the atmospheric pressure, and the atmosphere at atmospheric pressure outside the chamber 91. In addition, the seal portion 98b is expandable and contractable as the multiple lift pins 98a1, 98a2 rise and fall. For example, the seal portion 98b can have a bellows tube 98b1 and an O-ring 98b2 provided at the end of the bellows tube 98b1.

When the seal portion 98b is composed of a bellows tube 98b1 and an O-ring 98b2, when the chamber 91 is depressurized, the inside of the bellows tube 98b1 also becomes negative pressure through the gap between the lift pin 98a1 and the hole 97a1 of the electrode. The same applies to the bellows tube 98b1 provided on the lift pin 98a2. Negative pressure is also created inside the bellows tube 98b1. When the inside of the bellows tube 98b1 becomes negative pressure, the bellows tube 98b1 contracts. When the bellows tube 98b1 contracts, the lift pin 98a1 and the lift pin 98a2 are pulled up. For this reason, it is preferable to make the weight of the flange portion of the lift pin 98a1 and the lift pin 98a2 heavy enough to counter the force of the negative pressure that tries to contract the bellows tube 98b1.

The pusher 98c transmits the driving force from the driving section 98d to the lift pins 98a1, 98a2 selected according to the object to be transferred.
14 to 18 are schematic plan views illustrating the action of pusher 98c.
14 to 18 are schematic plan views of the pusher 98c taken along line AA in FIG.

As shown in Figures 14 to 18, the pusher 98c is rotatably arranged. The pusher 98c has a number of arms 98c1 that correspond to the number and arrangement of the lift pins 98a1, 98a2. For example, the pusher 98c illustrated in Figures 14 to 18 has three arms 98c1 arranged at equal intervals around the center of rotation of the pusher 98c. For example, the planar shape of the pusher 98c can be Y-shaped.

When transferring the workpiece 100, the arms 98c1 are positioned below each of the three holes 97a1, as shown in FIG. 14. When the pusher 98c is raised in this state, the three lift pins 98a1 that contact the workpiece 100 rise simultaneously. When the pusher 98c is lowered, the three lift pins 98a1 descend under their own weight.

When transferring the mask ring 101, the arms 98c1 are positioned below each of the three holes 97a2, as shown in FIG. 15. When the pusher 98c is raised in this state, the three lift pins 98a2 that contact the mask ring 101 rise simultaneously. When the pusher 98c is lowered, the three lift pins 98a2 descend under their own weight.

When transferring the electrode plate 102c, the arms 98c1 are positioned below each of the three holes 97a3, as shown in FIG. 16. When the pusher 98c is raised in this state, the three lift pins 98a2 that contact the electrode plate 102c rise simultaneously. When the pusher 98c is lowered, the three lift pins 98a2 descend under their own weight.

When transferring the electrode plate 102b, the arms 98c1 are positioned below each of the three holes 97a4, as shown in FIG. 17. When the pusher 98c is raised in this state, the three lift pins 98a2 that contact the electrode plate 102b rise simultaneously. When the pusher 98c is lowered, the three lift pins 98a2 descend under their own weight.

When transferring the electrode plate 102a, the arms 98c1 are positioned below each of the three holes 97a5, as shown in FIG. 18. When the pusher 98c is raised in this state, the three lift pins 98a2 that contact the electrode plate 102a rise simultaneously. When the pusher 98c is lowered, the three lift pins 98a2 descend under their own weight.

The driving unit 98d raises and lowers the lift pins 98a1 and 98a2. For example, the driving unit 98d rotates and raises and lowers the pusher 98c. The driving unit 98d may include, for example, an air cylinder or a servo motor.
If the pusher 98c and the drive unit 98d are provided, the function can be simplified compared to the case where a lifting mechanism is provided for each of the multiple lift pins 98a1, 98a2.

As described above, in a plan view, for example, three lift pins 98a2 can be provided at equal intervals on the circumference for each of the electrode plates 102a to 102c. The drive unit 98d can have a Y-shaped planar shape and a pusher 98c that can abut against the three lift pins 98a2, a rotation mechanism that can rotate the pusher 98c around the center of the circumference, and a first lifting mechanism that can raise and lower the pusher 98c.

19 and 20 are schematic views for illustrating the transfer of the electrode plate 102a.
First, as shown in FIG. 19, the electrode plate 102a supported by the hand 82a of the transfer unit 8 is carried into the chamber 91 through the opening 91b of the chamber 91.

Next, as shown in FIG. 20, the pusher 98c is raised by the drive unit 98d. As the pusher 98c rises, the three lift pins 98a2 rise and come into contact with the underside of the electrode plate 102a. At this time, the electrode plate 102a is lifted above the hand 82a. The hand 82a may be lowered so that the electrode plate 102a is positioned above the hand 82a.

Next, the hand 82 a retreats to the outside of the chamber 91 .
Next, the pusher 98c is lowered by the driving unit 98d, whereby the electrode plate 102a is lowered together with the three lift pins 98a2. The lowered electrode plate 102 is placed on the electrode 97a.

When the electrode plate 102a is to be removed from the chamber 91, the above procedure can be reversed. The workpiece 100, the mask ring 101, and the electrode plates 102b and 102c can also be placed or removed in the same manner.

FIG. 21 is a schematic plan view illustrating a transfer section 198 according to another embodiment.
22 is a cross-sectional view of the transfer section 198 taken along line BB in FIG.
The transfer unit 198 transfers the workpiece 100 , the electrode plates 102 a to 102 c , and the mask ring 101 between the placement unit 197 (electrode 197 a ) and the hand 82 a of the transfer unit 8 .

As shown in Figures 21 and 22, the transfer unit 198 can have, for example, multiple lift pins 98a1, 98a2, multiple seal units 98b, bases 198c1 to 198c5, and a drive unit 198d.

The base 198c1 is annular and is connected to the lower ends of multiple lift pins 98a1 that transfer the workpiece 100.

The base 198c2 is annular and is connected to the lower ends of multiple lift pins 98a2 that transfer the mask ring 101.

The base 198c3 has an annular shape and is connected to the lower ends of a plurality of lift pins 98a2 that transfer the electrode plate 102c.
The base 198c4 has an annular shape and is connected to the lower ends of a plurality of lift pins 98a2 that transfer the electrode plate 102b.
The base 198c5 has an annular shape and is connected to the lower ends of a plurality of lift pins 98a2 that transfer the electrode plate 102a.

As shown in FIG. 22, the drive unit 198d has a moving unit 198d1 and a lifting unit 198d2.
The moving section 198d1 moves the lifting section 198d2 to below the lift pins 98a1 and 98a2 that perform the transfer. The moving section 198d1 may include, for example, a servo motor and a guide mechanism.

The lifting unit 198d2 raises the bases 198c1 to 198c5 connected to the lift pins 98a1 and 98a2 that perform the transfer. The lifting unit 198d2 can have, for example, an air cylinder.

As described above, in a plan view, the lift pins 98a1, 98a2 are provided at equal intervals on a circumference for each transfer target. The lower ends of the lift pins 98a1, 98a2 are connected to the bases 198c1 to 198c5 for each transfer target.
The drive section 198d includes a lifting section 198d1 (corresponding to an example of a second lifting mechanism) capable of lifting and lowering the bases 198c1 to 198c5, and a moving section 198d1 capable of moving the lifting section 198d1 in the horizontal direction.
Providing the moving portion 198d1 and the lifting portion 198d2 can simplify the function compared to a case where a lifting mechanism is provided for each of the multiple lift pins 98a1, 98a2.

FIG. 23 is a schematic cross-sectional view illustrating a processing unit 190 according to another embodiment.
As shown in FIG. 23, the processing unit 190 includes, for example, a chamber 191, an antenna 92, a high frequency power supply 93, a high frequency power supply 94, a gas supply unit 95, an exhaust unit 192, a placement unit 97, a transfer unit 98, a support unit 193, and a cover 194.

The chamber 191 has an airtight structure capable of maintaining an atmosphere at a reduced pressure below atmospheric pressure. A transmission window 91a is provided at the top of the chamber 191 so as to be airtight. The transmission window 91a has a plate shape and can be made of a dielectric material such as quartz.

The exhaust unit 192 is located below the mounting unit 97 and reduces the pressure inside the chamber 191 to a predetermined pressure. The exhaust unit 192 may be equipped with, for example, a turbomolecular pump or a poppet valve.

The support part 193 supports the mounting part 97 in the internal space of the chamber 191. The support part 193 is arranged to extend between the side surface of the chamber 191 and below the mounting part 97. A transfer part 98 is provided on the part of the support part 193 where the mounting part 97 is provided.

The cover 194 is provided on a portion of the support part 193 where the mounting part 97 is provided. The cover 194 airtightly seals between an atmosphere inside the chamber 191 that is lower than atmospheric pressure and an atmosphere inside the support part 193 that is at atmospheric pressure.
If the support portion 193 and the cover 194 are provided, the transfer portion 98 can be provided inside the chamber 191 .

Although the present embodiment has been described above as an example, the present invention is not limited to the description thereof.
Any modifications to the above-described embodiments made by those skilled in the art are also encompassed within the scope of the present invention as long as they incorporate the features of the present invention.
For example, the shape, size, material, arrangement, number, etc. of each element included in the plasma processing apparatus 1 are not limited to those exemplified, and can be changed as appropriate.
Furthermore, the elements of each of the above-described embodiments can be combined to the greatest extent possible, and combinations of these are also included within the scope of the present invention as long as they include the features of the present invention.
For example, in order to improve the conductivity between the electrode 97a and the electrode plate 102a, an elastic conductive plate may be provided in the recess 101b of the electrode plate 102a to sandwich the positioning pin 102a5. Also, an elastic conductive plate may be provided in the recess 101c of the electrode plate 102a to sandwich the positioning pin 102a6. Also, a conductive leaf spring may be provided on the lower surface of the electrode plate 102a to bend and deform when it comes into contact with the electrode 97a and to come into close contact with the electrode 97a. The electrode plates 102b and 102c may also be provided with a mechanism for improving the conductivity similar to that of the electrode plate 102a.

1 Plasma processing apparatus, 2 Controller, 3 Storage section, 4 Transport section, 5 Load lock section, 6 Mask ring storage section, 7 Electrode plate storage section, 8 Delivery section, 9 Processing section, 61 Chamber, 62 Shelf, 63 Lifting section, 81 Chamber, 82 Transport section, 97 Placement section, 97a Electrode, 98 Transfer section, 98a1 Lift pin, 98a2 Lift pin, 98c Pusher, 98d Drive section, 100 Processing object, 101 Mask ring, 101b Recess, 101c Recess, 102a to 102c Electrode plate, 102a5 Pin, 102a6 Pin, 190 Processing section, 197 Placement section, 197a Electrode, 198 Transfer section, 198c1 to 198c5 Base, 198d Drive section, 198d1 Moving section, 198d2 Lifting section

Claims (8)

A mounting unit used in plasma processing,
An electrode;
a plurality of electrode plates disposed on the electrode;
Equipped with
A plurality of pins are provided on the upper surface of the electrode,
a recess into which each of the pins of the electrode is inserted is provided on one surface of the electrode plate ;
a first electrode plate provided on the electrode and provided on the other surface thereof with a plurality of first pins;
a second electrode plate provided on the first electrode plate, the second electrode plate having a surface facing the first electrode plate, the second electrode plate having recesses into which the first pins are inserted;
Plasma processing platform. A mounting unit used in plasma processing,
An electrode;
a plurality of electrode plates disposed on the electrode;
Equipped with
A plurality of pins are provided on the upper surface of the electrode,
a recess into which each of the pins of the electrode is inserted is provided on one surface of the electrode plate;
The plasma processing platform has a plurality of first pins provided on the other surface of the electrode plate. The electrode plate is provided in plurality,
The planar shape of the plurality of electrode plates is substantially circular,
3. The plasma processing platform according to claim 1, wherein the plurality of electrode plates have substantially the same planar dimensions. The electrode is provided with a plurality of holes penetrating in a thickness direction of the electrode,
a plurality of lift pins capable of pushing up the electrode plate through the plurality of holes provided in the electrode;
A drive unit capable of raising and lowering the plurality of lift pins;
The plasma processing platform according to any one of claims 1 to 3 , comprising: In a plan view, the plurality of lift pins are provided in groups of three at equal intervals on a circumference,
The drive unit is
a pusher having a Y-shape in plan view and capable of contacting the three lift pins;
a rotation mechanism capable of rotating the pusher around the center of the circumference;
a first lifting mechanism capable of lifting and lowering the pusher;
5. The plasma processing platform according to claim 4, further comprising: In a plan view, the plurality of lift pins are provided at equal intervals on a circumference,
the lower ends of the plurality of lift pins are connected to a base;
The drive unit is
A second lifting mechanism capable of lifting and lowering the base;
a moving unit capable of moving the second lifting mechanism in a horizontal direction;
5. The plasma processing platform according to claim 4, comprising: A placement section according to any one of claims 1 to 6 ,
a first chamber having the placement portion provided therein and configured to perform plasma processing on an object to be processed;
a mask ring provided on an electrode plate provided on the mounting portion and capable of supporting the object to be processed;
a second chamber connected to the first chamber;
a conveying unit provided inside the second chamber and having a hand;
Equipped with
The hand is
A first support portion that supports the object to be processed;
a second support portion that supports the electrode plate or the mask ring;
a second pin for determining the position of the electrode plate or the mask ring;
A plasma processing apparatus comprising: The electrode plate storage unit may further include an electrode plate storage unit capable of storing a plurality of the electrode plates.
The electrode plate storage section includes:
a third chamber connected to the second chamber;
a shelf disposed within the third chamber and capable of supporting the plurality of electrode plates;
A third lifting mechanism capable of raising and lowering the shelf;
having
the shelf has a plurality of support portions capable of supporting one of the electrode plates in a lifting direction,
8. The plasma processing apparatus according to claim 7 , wherein each of the plurality of supports has a third pin that can be inserted into a recess provided in the electrode plate.

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