JP7640255B2 - Semiconductor wafer mounting substrate, dicing tape, and dicing die bond film - Google Patents

Description

The present invention relates to a substrate for mounting semiconductor wafers, a dicing tape, and a dicing die bond film.

2. Description of the Related Art Conventionally, in the manufacture of semiconductor devices, it is known to use a dicing tape or a dicing die bond film to obtain a semiconductor chip for die bonding.
The dicing tape comprises a substrate (substrate for mounting a semiconductor wafer) and an adhesive layer laminated on the substrate, and the dicing die bond film comprises a die bond layer (die bond film) releasably laminated on the adhesive layer of the dicing tape.

As a method for obtaining a semiconductor chip (die) for die bonding using the dicing die bond film, the following Patent Document 1 discloses a method including a half-cut process in which a groove is formed in a semiconductor wafer to process the semiconductor wafer into a chip (die) by a fracturing process, a back-grind process in which the semiconductor wafer after the half-cut process is ground to reduce its thickness, a mounting process in which one surface (the surface opposite to the circuit surface) of the semiconductor wafer after the back-grind process is attached to a die-bonding layer and the semiconductor wafer is fixed to a dicing tape, an expanding process in which the space between the half-cut semiconductor chips is expanded, a kerf maintaining process in which the space between the semiconductor chips is maintained, and a pick-up process in which the die-bonding layer and the adhesive layer are peeled off to remove the semiconductor chip with the die-bonding layer attached.
In the expanding step, the die bond layer is cut into pieces having sizes corresponding to the sizes of the individual semiconductor chips.

In a method for obtaining semiconductor chips for die bonding using the above-mentioned dicing tape or dicing die bond film, the following Patent Document 2 discloses that by using a dicing tape with specific physical properties (a dicing tape with an initial elastic modulus of 200 MPa to 380 MPa at -10°C and a Tan δ (loss elastic modulus/storage elastic modulus) of 0.080 to 0.3 at -10°C) and performing the expanding process under low-temperature conditions of -15 to 5°C, the ability to break the semiconductor wafer into multiple semiconductor chips (e.g., ease of breaking and uniformity) and the ability to break the die bond layer attached to the semiconductor wafer into a size equivalent to the size of the multiple semiconductor chips can be improved in the expanding process.

JP 2019-9203 A JP 2015-185591 A

However, even if the dicing tape is configured as described in Patent Document 1, in the expanding process, it may not be possible to sufficiently cut the die bond layer to a size corresponding to the size of the multiple semiconductor chips.
In addition, in order to realize the miniaturization of semiconductor devices, which has been increasingly demanded in recent years, when a plurality of semiconductor chips each having a cleaved die bond layer are mounted on a wiring board via the die bond layer, one of the plurality of semiconductor chips is mounted on the wiring board via the die bond layer, and then a plurality of other semiconductor chips are mounted so as to overlap the one semiconductor chip in a plan view and be higher than the one semiconductor chip, and the one semiconductor chip is covered with the die bond layer provided on the semiconductor chip located at the lowest position among the plurality of other semiconductor chips, which is called FOD (Film On Die) mounting form; and in FOW (Film On Die) mounting form, in which a semiconductor chip is attached to a wiring board via a die bond layer and wire-bonded to the wiring board by a bonding wire, and the other semiconductor chip is attached to the wiring board via the other die bond layer in a state in which the whole of the one semiconductor chip and a part or all of the bonding wire are embedded in the other die bond layer (embedded in the other die bond layer), for a semiconductor chip. In this case, a mounting form called "SIM-Wire" is adopted.
Here, in FOD, the thickness of the die bond layer covering one semiconductor chip mounted on the wiring substrate is relatively thick, at about 100 μm to 140 μm, and in FOW, the thickness of the other die bond layer covering the entire semiconductor chip mounted on the semiconductor substrate and some or all of the bonding wires is also relatively thick, at about 40 μm to 80 μm, so it is considered that the problem of the breakability of the die bond layer in the expanding process becomes greater.
In view of the above circumstances, there is a demand for a die bond layer that exhibits more satisfactory cleavability in the expanding step, but it cannot be said that sufficient research has been carried out on this matter yet.

There is also concern that the substrate may tear during the expanding process.

The above problems are likely to occur in all cases where the above-mentioned expansion process is adopted in the method of obtaining semiconductor chips for die bonding using the dicing die bond film.

The present invention aims to provide a semiconductor wafer mounting substrate that is relatively resistant to tearing during the expansion process and that can relatively sufficiently cleave the die bond layer, as well as a dicing tape and a dicing die bond film that include the semiconductor wafer mounting substrate.

As a result of intensive research, the inventors have found that when the substrate for mounting a semiconductor wafer has a breaking elongation of 300% or more at -15°C and a breaking strength of 20 N /10 mm or more at -15°C, the substrate for mounting a semiconductor wafer is relatively difficult to break in the expanding step, and the die bond layer disposed on the substrate for mounting a semiconductor wafer can be relatively sufficiently fractured, which led to the invention.

That is, the semiconductor wafer mounting substrate according to the present invention is
The breaking elongation at -15°C is 300% or more, and the breaking strength at -15°C is 20 N /10 mm or more.

With this configuration, the semiconductor wafer mounting substrate is relatively resistant to tearing during the expanding process, and the die bond layer (the die bond layer disposed on the semiconductor wafer mounting substrate) can be broken relatively sufficiently.

In the semiconductor wafer mounting base material,
It is preferable that the insulating layer has at least one layer containing an elastomer resin.

With this configuration, the semiconductor wafer mounting substrate is less likely to break during the expanding process, and the die bond layer (the die bond layer disposed on the semiconductor wafer mounting substrate) can be broken more thoroughly.

In the semiconductor wafer mounting base material,
The elastomer resin is preferably an olefin-based elastomer resin.

With this configuration, the semiconductor wafer mounting substrate is less likely to break during the expanding process, and the die bond layer (the die bond layer disposed on the semiconductor wafer mounting substrate) can be broken more thoroughly.

In the semiconductor wafer mounting base material,
The thickness is preferably 90 μm or more and 130 μm or less.

With this configuration, the semiconductor wafer mounting substrate is less likely to break during the expanding process, and the die bond layer (the die bond layer disposed on the semiconductor wafer mounting substrate) can be broken more thoroughly.

The dicing tape according to this embodiment is
A substrate;
A pressure-sensitive adhesive layer laminated on the substrate,
The substrate is any one of the substrates for mounting a semiconductor wafer described above.

With this configuration, the semiconductor wafer mounting substrate is relatively resistant to tearing during the expanding process, and the die bond layer (the die bond layer disposed on the adhesive layer) can be broken relatively sufficiently.

The dicing die bond film according to this embodiment is
A dicing tape having a pressure-sensitive adhesive layer laminated on a substrate;
a die bond layer laminated on the pressure-sensitive adhesive layer of the dicing tape;
The substrate is any one of the substrates for mounting a semiconductor wafer described above.

With this configuration, the semiconductor wafer mounting substrate is relatively resistant to tearing during the expanding process, and the die bond layer can be broken relatively sufficiently.

The present invention provides a semiconductor wafer mounting substrate that is relatively resistant to tearing during the expansion process and that can relatively sufficiently cleave the die bond layer, as well as a dicing tape and a dicing die bond film that include the semiconductor wafer mounting substrate.

1 is a cross-sectional view showing a configuration of a dicing tape according to an embodiment of the present invention. 1 is a cross-sectional view showing a configuration of a dicing die bond film according to one embodiment of the present invention. 1A to 1C are cross-sectional views each showing a schematic view of a half-cut process in a manufacturing method of a semiconductor integrated circuit. 1A to 1C are cross-sectional views each showing a schematic view of a half-cut process in a manufacturing method of a semiconductor integrated circuit. 1A to 1C are cross-sectional views each showing a schematic diagram of a back grinding process in a manufacturing method of a semiconductor integrated circuit. 1A to 1C are cross-sectional views each showing a schematic diagram of a back grinding process in a manufacturing method of a semiconductor integrated circuit. 1A to 1C are cross-sectional views each showing a schematic view of a mounting step in a manufacturing method of a semiconductor integrated circuit. 1A to 1C are cross-sectional views each showing a schematic view of a mounting step in a manufacturing method of a semiconductor integrated circuit. 1A to 1C are cross-sectional views each showing a schematic diagram of an expanding step performed at a low temperature in a method for manufacturing a semiconductor integrated circuit. 1A to 1C are cross-sectional views each showing a schematic diagram of an expanding step performed at a low temperature in a method for manufacturing a semiconductor integrated circuit. 1A to 1C are cross-sectional views each showing a schematic diagram of an expanding step performed at a low temperature in a method for manufacturing a semiconductor integrated circuit. 1A to 1C are cross-sectional views each showing a schematic diagram of an expanding step at room temperature in a method for manufacturing a semiconductor integrated circuit. 1A to 1C are cross-sectional views each showing a schematic diagram of an expanding step at room temperature in a method for manufacturing a semiconductor integrated circuit. 1A to 1C are cross-sectional views each showing a kerf maintaining step in a method for manufacturing a semiconductor integrated circuit. 1A to 1C are cross-sectional views each showing a pickup step in a method for manufacturing a semiconductor integrated circuit.

One embodiment of the present invention is described below.

[Substrate for mounting semiconductor wafers]
The semiconductor wafer mounting substrate according to this embodiment has a breaking elongation at -15°C of 300% or more and a breaking strength at -15°C of 20 N /10 mm or more.
The semiconductor wafer mounting substrate according to this embodiment is used as a substrate for dicing tape and dicing die bond film, which are used as manufacturing aids for manufacturing semiconductor integrated circuits, as described below.

The inventors believe that the semiconductor wafer according to this embodiment has the above-mentioned configuration, and therefore the semiconductor wafer mounting substrate is relatively resistant to tearing during the expansion process (the expansion process when manufacturing a semiconductor using a dicing tape and a dicing die bond film as manufacturing aids), and the die bond layer (the die bond layer disposed on the semiconductor wafer mounting substrate) can be relatively satisfactorily broken, for the following reasons.

When a semiconductor wafer and a die bond layer attached to the semiconductor wafer are cut to obtain a plurality of semiconductor chips and die bond layers diced into pieces having sizes corresponding to the sizes of the plurality of semiconductor chips, in order to provide sufficient spacing between adjacent semiconductor chips and between the diced die bond layers, it is preferable that the semiconductor wafer mounting substrate in the dicing tape is sufficiently stretched (stretched) in the expanding step (for example, expanding at a low temperature (for example, −15° C.)).
On the other hand, as described above, when the semiconductor wafer mounting substrate is being stretched in the expanding process, it is necessary to prevent the semiconductor wafer mounting substrate from breaking, and it is necessary to sufficiently fracture the die bond layer disposed on the semiconductor wafer mounting substrate.
From this viewpoint, it is considered that the semiconductor wafer mounting base needs to have appropriate hardness in addition to appropriate elasticity, and needs to be easily subjected to an appropriate amount of stress.
The semiconductor wafer mounting substrate according to this embodiment has a breaking elongation of 300% or more at -15°C and a breaking strength of 20 N /10 mm or more at -15°C. In other words, the breaking elongation at -15°C and breaking strength at -15°C have appropriate values. Therefore, the present inventors believe that the substrate has appropriate hardness in addition to appropriate elasticity and is easily subjected to appropriate stress, so that the substrate can be prevented from breaking and the die bond layer disposed on the substrate can be sufficiently fractured.

By appropriately setting the materials constituting the semiconductor wafer mounting substrate, the layer configuration of the semiconductor wafer mounting substrate, the thickness of the semiconductor wafer mounting substrate, and the like, or, when a plurality of materials constituting the semiconductor wafer mounting substrate are used, by appropriately adjusting the ratio of these materials, the semiconductor wafer mounting substrate can be made to have a breaking elongation at -15°C of 300% or more and a breaking strength at -15°C of 20 N /10 mm or more.

The breaking elongation at -15°C and the breaking strength at -15°C can be determined as follows.
Specifically, the breaking elongation is measured by using a dicing tape having a length of 120 mm (measurement length: L ₀ ) and a width of 10 mm as a test piece, and pulling the test piece in the longitudinal direction using a tensile tester (Autograph AG-IS, manufactured by Shimadzu Corporation) under conditions of a temperature of -15°C, a chuck distance of 50 mm, and a tensile speed of 1000 mm/min, and measuring the length (L ₁ ) at which the test piece breaks.
Then, the breaking elongation E at −15° C. is calculated based on the following formula.

Breaking elongation E=(L ₁ −L ₀ )/L ₀ ×100

The breaking strength can be determined by measuring the force applied when the test piece breaks when a tensile test is performed under the same conditions as described above using the test piece and the tensile tester.

The semiconductor wafer mounting substrate according to the present embodiment contains a resin. Examples of the resin contained in the semiconductor wafer mounting substrate include polyolefin resin, polyester resin, polyurethane resin, polycarbonate resin, polyether ether ketone resin, polyimide resin, polyetherimide resin, polyamide resin, wholly aromatic polyamide resin, polyvinyl chloride resin, polyvinylidene chloride, polyphenyl sulfide, fluororesin, cellulose-based resin, silicone resin, EVA resin (ethylene vinyl acetate copolymer resin), ionomer resin, and elastomer.
The semiconductor wafer mounting substrate according to this embodiment may contain one type of the above-mentioned resin, or may contain two or more types.
As described below, when the adhesive layer laminated on the substrate for mounting a semiconductor wafer contains an ultraviolet-curable adhesive, the substrate for mounting a semiconductor wafer is preferably configured to be ultraviolet-transparent.
Of the above resins, the semiconductor wafer mounting substrate according to this embodiment preferably contains an EVA resin or an elastomer, and more preferably contains an elastomer.

Examples of the elastomer resin include various known elastomer resins such as styrene-based elastomer resins, olefin-based elastomer resins, polyester-based elastomer resins, and polyurethane-based elastomer resins.
Of these, it is preferable to use an olefin-based elastomer resin, and of the olefin-based elastomer resins, it is preferable to use a propylene-based elastomer resin.
A commercially available example of the propylene-based elastomer resin is Vistamax 3980 manufactured by ExxonMobil Chemical Company.

The substrate for mounting a semiconductor wafer according to this embodiment may have a single-layer structure or a laminated structure. When it has a laminated structure, it preferably has a layer containing an elastomer resin (hereinafter referred to as an elastomer layer) or a layer containing an EVA resin having a vinyl acetate content of 20 mass % or more (hereinafter referred to as a first EVA resin), and among these, it is more preferable that it has an elastomer layer.
In addition, when the substrate for mounting a semiconductor wafer according to this embodiment has a single-layer structure, the substrate for mounting a semiconductor wafer preferably contains an EVA resin, and among the EVA resins, it is preferable that the substrate contains an EVA resin having a vinyl acetate content of 10 mass %.
The vinyl acetate content of the EVA resin can be measured in accordance with JIS K7192:1999.
The first EVA resin may be Evaflex (registered trademark) EV250 manufactured by Dow Mitsui Polychemicals.
The semiconductor wafer mounting substrate may be obtained by non-stretch molding or by stretch molding, but is preferably obtained by stretch molding.

The elastomer layer contains an elastomer resin. In addition to the elastomer resin, the elastomer layer preferably contains an EVA resin having a vinyl acetate content of more than 10% by mass and not more than 30% by mass (hereinafter referred to as a second EVA resin).
Since the elastomer layer contains an elastomer resin and a second EVA resin, the elastomer layer has relatively high heat shrinkability, and therefore the kerf can be relatively well maintained in the kerf maintaining process described below, and the strength is relatively high, making it possible to smoothly cut the semiconductor wafer.
When the elastomer layer contains an elastomer resin and a second EVA resin, the elastomer resin is preferably contained in an amount of 50% by mass or more and 90% by mass or less, and more preferably 60% by mass or more and 80% by mass or less.
The second EVA resin is preferably contained in an amount of 10% by mass or more and 50% by mass or less, and more preferably 20% by mass or more and 40% by mass or less.
Furthermore, the ratio _W1 of the mass of the elastomer resin to the mass of the second EVA _resin (second EVA resin/elastomer resin) is preferably 0.1 or more, more preferably 0.25 or more, and is preferably 1.0 or less, more preferably 0.67 or less.
A commercially available product of the second EVA resin is Evaflex (registered trademark) P1007 manufactured by Dow Mitsui Polychemicals.

When the substrate for mounting a semiconductor wafer has a laminated structure, the substrate for mounting a semiconductor wafer may be configured by laminating a plurality of elastomer layers, or may be configured to include an elastomer layer and a layer that does not contain an elastomer resin (hereinafter referred to as a non-elastomer layer).
In this specification, the elastomer layer refers to a low modulus layer having a lower tensile storage modulus at room temperature (23° C.) than that of a non-elastomer layer. The elastomer layer may have a tensile storage modulus of 10 MPa or more and 100 MPa or less at room temperature, and the non-elastomer layer may have a tensile storage modulus of 200 MPa or more and 500 MPa or less at room temperature.
The tensile storage modulus at room temperature refers to a value measured as follows.
Specifically, a film having a length of 40 mm and a width of 10 mm is used as a test piece, and the tensile storage modulus of the test piece is measured using a solid viscoelasticity measuring device (e.g., Model RSAIII, manufactured by Rheometric Scientific) under conditions of a frequency of 1 Hz, a strain of 0.1%, a temperature rise rate of 10° C./min, and a chuck distance of 22.5 mm in a temperature range of −50° C. to 100° C. In this case, the value at room temperature (23° C.) is read, so that the tensile storage modulus at room temperature can be obtained.
The measurement is carried out by pulling the test piece in the MD direction (resin flow direction).

In the configuration in which a plurality of elastomer layers are laminated, it is preferable that two or more elastomer layers are laminated, and it is particularly preferable that three elastomer layers are laminated.
In the structure in which two elastomer layers are laminated, the ratio T1 (second layer/first layer) of the thickness of the layer that will be on the outside when wound and stored (hereinafter referred to as the first layer) to the thickness of the layer that will be on the inside when _{wound and stored (hereinafter referred to as the second layer) is preferably 5 or more, more preferably 10 or more. Moreover, T1 is} preferably 30 or less, more preferably 20 or less.
In the structure in which three elastomer layers are laminated, if the layer that will be the innermost layer when rolled up and stored (the layer on the opposite side of the second layer to the side on which the first layer is laminated) is called the third layer, the ratio of the layer thickness of the third layer to the layer thickness of the second layer (second layer/third layer) _T3 is preferably 5 or more, more preferably 7 or more. Moreover, _T3 is preferably 20 or less, more preferably 15 or less.
Furthermore, in such a three-layer structure, the ratio of the layer thickness of the first layer to the layer thickness of the second layer (second layer/first layer), _T2 , is preferably 5 or more, more preferably 7 or more. Moreover, _T2 is preferably 20 or less, more preferably 15 or less.
In a configuration in which two or more elastomer layers are laminated, the outermost layer (the first layer) which is the outermost layer when the sheet is wound and stored preferably contains an antistatic agent, which can prevent the outermost layer from being charged with static electricity.
The innermost layer (the third layer in the case of a three-layer structure), which is the innermost layer when the film is wound and stored, may contain an antistatic agent.
The outermost layer preferably contains 10% by mass or more, and more preferably 20% by mass or more, of the antistatic agent based on the total mass of the resin contained in the outermost layer.
The outermost layer preferably contains 40% by mass or less, and more preferably 30% by mass or less, of the antistatic agent based on the total mass of the resin contained in the outermost layer.
Furthermore, when the innermost layer contains an antistatic agent, it is preferable that the antistatic agent is contained in the same mass ratio as above.

In the configuration including the elastomer layer and the non-elastomer layer, the non-elastomer layer preferably includes a polypropylene resin that is a polymerization product of a metallocene catalyst (hereinafter, referred to as a metallocene PP resin). Examples of the metallocene PP resin include a propylene/α-olefin copolymer that is a polymerization product of a metallocene catalyst.
An example of a commercially available metallocene PP resin is Wintec WXK1223 manufactured by Japan Polypropylene Corporation.
The non-elastomer layer may contain an ionomer resin, and by containing an ionomer resin, the non-elastomer layer has improved elasticity and flexibility in a low temperature range.
When the non-elastomer layer contains a metallocene PP resin and an ionomer resin, the metallocene PP resin is contained in an amount of preferably 50% by mass or more and 90% by mass or less, and more preferably 60% by mass or more and 80% by mass or less.
The ionomer resin is contained in an amount of preferably 10% by mass or more and 50% by mass or less, and more preferably 20% by mass or more and 40% by mass or less.
Furthermore, the ratio _W2 of the mass of the metallocene PP resin to the mass of the ionomer resin (ionomer resin/metallocene PP resin) is preferably 0.1 or more, and more preferably 0.25 or more.
Additionally, _W2 is preferably 1.0 or less, and more preferably 0.67 or less.

The metallocene catalyst is a catalyst consisting of a transition metal compound of Group 4 of the periodic table (so-called metallocene compound) that contains a ligand having a cyclopentadienyl skeleton, and a cocatalyst that can react with the metallocene compound to activate the metallocene compound to a stable ionic state, and optionally contains an organoaluminum compound. The metallocene compound is a crosslinked metallocene compound that enables stereoregular polymerization of propylene.

Among the propylene/α-olefin copolymers which are polymerization products of the metallocene catalyst, propylene/α-olefin random copolymers which are polymerization products of the metallocene catalyst are preferred, and among the propylene/α-olefin random copolymers which are polymerization products of the metallocene catalyst, those selected from propylene/α-olefin random copolymers having 2 carbon atoms which are polymerization products of the metallocene catalyst, propylene/α-olefin random copolymers having 4 carbon atoms which are polymerization products of the metallocene catalyst, and propylene/α-olefin random copolymers having 5 carbon atoms which are polymerization products of the metallocene catalyst are preferred, and among these, propylene/ethylene random copolymers which are polymerization products of the metallocene catalyst are the most suitable.

In addition, when the substrate for mounting a semiconductor wafer has a laminated structure of an elastomer layer and a non-elastomer layer, the substrate for mounting a semiconductor wafer is preferably obtained by co-extrusion molding in which a resin constituting the elastomer layer and a resin constituting the non-elastomer layer are co-extruded to form a laminated structure of the elastomer layer and the non-elastomer layer.
As the co-extrusion molding, any appropriate co-extrusion molding generally performed in the production of films, sheets, etc. can be adopted. Among the co-extrusion moldings, it is preferable to adopt an inflation method or a co-extrusion T-die method, since the substrate for mounting a semiconductor wafer can be efficiently obtained.

When the substrate for mounting a semiconductor wafer having a laminated structure is obtained by co-extrusion molding, the elastomer layer and the non-elastomer layer are heated and contacted in a molten state, and therefore it is preferable that the difference in melting point between the resin contained in the elastomer layer and the resin contained in the non-elastomer layer is small.
As described above, the small melting point difference between the resin contained in the elastomer layer and the resin contained in the non-elastomer layer prevents the resin with the lower melting point from being subjected to excessive heat, thereby preventing the resin with the lower melting point from being thermally deteriorated and thereby preventing the generation of by-products. In addition, the viscosity of the resin with the lower melting point from being excessively reduced, which causes lamination defects between the elastomer layer and the non-elastomer layer. The melting point difference between the resin contained in the elastomer layer and the resin contained in the non-elastomer layer is preferably 0°C or more and 70°C or less, more preferably 0°C or more and 55°C or less.
The melting points of the resin contained in the elastomer layer and the resin contained in the non-elastomer can be measured by differential scanning calorimetry (DSC) analysis. For example, the melting points can be measured by using a differential scanning calorimeter (manufactured by TA Instruments, model DSC Q2000) to raise the temperature to 200° C. at a rate of 5° C./min under a nitrogen gas flow, and determining the peak temperature of the endothermic peak.
In addition, when the elastomer layer or the non-elastomer layer contains multiple resins, when the melting points of the resins contained in the elastomer layer and the resins contained in the non-elastomer layer are measured using a differential scanning calorimeter, multiple peaks corresponding to the respective resins are detected. In such a case, the peak temperature of the two resins with the largest melting point difference is the melting point difference.

The thickness of the semiconductor wafer mounting substrate according to this embodiment is preferably 55 μm or more and 195 μm or less, more preferably 70 μm or more and 150 μm or less, and particularly preferably 90 μm or more and 130 μm or less.
By setting the thickness of the semiconductor wafer mounting substrate to 90 μm or more and 130 μm or less, the semiconductor wafer mounting substrate becomes more resistant to tearing during the process of stretching the semiconductor wafer mounting substrate (the expanding process and pick-up process when manufacturing a semiconductor using a dicing tape and a dicing die bond film as manufacturing aids), and the die bond layer (the die bond layer disposed on the semiconductor wafer mounting substrate) can be more sufficiently broken.
The thickness of the semiconductor wafer mounting substrate can be determined, for example, by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses.

[Dicing tape]
Next, a dicing tape 10 according to the present embodiment will be described with reference to Fig. 1. In the description of the dicing tape 10, the description of parts that overlap with the above-described semiconductor wafer mounting substrate will not be repeated.

As shown in FIG. 1, a dicing tape 10 according to this embodiment includes a substrate 1 and a pressure-sensitive adhesive layer 2 laminated on the substrate 1 .
That is, in the dicing tape 10 according to this embodiment, the substrate 1 supports the pressure-sensitive adhesive layer 2 .
In the dicing tape 10 according to this embodiment, the substrate 1 is a substrate for mounting a semiconductor wafer according to this embodiment.
As described above, the semiconductor wafer mounting substrate according to this embodiment has a breaking elongation at -15°C of 300% or more and a breaking strength at -15°C of 20 N /10 mm or more.

The semiconductor wafer mounting substrate preferably has at least one layer containing an elastomer resin.
In the semiconductor wafer mounting substrate, the elastomer resin is preferably an olefin-based elastomer resin.
Furthermore, the thickness of the semiconductor wafer mounting base is preferably 90 μm or more and 130 μm or less.

The adhesive layer 2 contains an adhesive. The adhesive layer 2 adheres to the semiconductor wafer to be diced into semiconductor chips, thereby holding the semiconductor wafer in place.

The adhesive may be one whose adhesive strength can be reduced by external action during use of the dicing tape 10 (hereinafter referred to as an adhesive reduction type adhesive).

When a reduced-adhesion adhesive is used as the adhesive, during the use of the dicing tape 10, the adhesive layer 2 can be used in either a state where it exhibits a relatively high adhesive strength (hereinafter referred to as a high-adhesion state) or a state where it exhibits a relatively low adhesive strength (hereinafter referred to as a low-adhesion state). For example, when a semiconductor wafer attached to the dicing tape 10 is subjected to cutting, the high-adhesion state is used to prevent the multiple semiconductor chips separated by cutting the semiconductor wafer from lifting up or peeling off from the adhesive layer 2. In contrast, in order to pick up the multiple semiconductor chips separated after cutting the semiconductor wafer, the low-adhesion state is used to make it easier to pick up the multiple semiconductor chips from the adhesive layer 2.

The tack-reducing adhesive may be, for example, an adhesive that can be cured by exposure to radiation during use of the dicing tape 10 (hereinafter referred to as a radiation-curable adhesive).

The radiation-curable adhesive may be, for example, an adhesive that cures when irradiated with electron beams, ultraviolet rays, alpha rays, beta rays, gamma rays, or X-rays. Of these, it is preferable to use an adhesive that cures when irradiated with ultraviolet rays (ultraviolet-curable adhesive).

The radiation-curable adhesive may be, for example, an additive-type radiation-curable adhesive that contains a base polymer such as an acrylic polymer and a radiation-polymerizable monomer component or a radiation-polymerizable oligomer component that has a functional group such as a radiation-polymerizable carbon-carbon double bond.

The acrylic polymer includes a monomer unit derived from a (meth)acrylic acid ester. Examples of the (meth)acrylic acid ester include an alkyl (meth)acrylate ester, a cycloalkyl (meth)acrylate ester, and an aryl (meth)acrylate ester.

The adhesive layer 2 may contain an external crosslinking agent. Any external crosslinking agent can be used as long as it can react with the acrylic polymer, which is the base polymer, to form a crosslinked structure. Examples of such external crosslinking agents include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine-based crosslinking agents.

Examples of the radiation polymerizable monomer component include urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and 1,4-butanediol di(meth)acrylate. Examples of the radiation polymerizable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based oligomers. The content ratio of the radiation polymerizable monomer component or radiation polymerizable oligomer component in the radiation curable adhesive is selected within a range that appropriately reduces the adhesiveness of the adhesive layer 2.

The radiation-curable adhesive preferably contains a photopolymerization initiator. Examples of photopolymerization initiators include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, camphorquinone, halogenated ketones, acylphosphinoxides, and acylphosphonates.

In addition to the above components, the adhesive layer 2 may contain a crosslinking accelerator, a tackifier, an anti-aging agent, a pigment, a colorant such as a dye, etc.

The thickness of the pressure-sensitive adhesive layer 2 is preferably 1 μm or more and 50 μm or less, more preferably 2 μm or more and 45 μm or less, and even more preferably 5 μm or more and 40 μm or less.
The thickness of the adhesive layer 2 can be determined, for example, by measuring the thickness at five randomly selected points using a dial gauge (Model R-205, manufactured by PEACOCK) and calculating the arithmetic average of these thicknesses.

[Dicing die bond film]
Next, the dicing die bond film 20 according to this embodiment will be described with reference to Fig. 2. In the description of the dicing die bond film 20, the description of the portions overlapping with the above-mentioned semiconductor wafer mounting base material and dicing tape 10 will not be repeated.

As shown in Figure 2, the dicing die bond film 20 of this embodiment comprises a dicing tape 10 having an adhesive layer 2 laminated on a substrate 1, and a die bond layer 3 laminated on the adhesive layer 2 of the dicing tape 10.
That is, in the dicing die-bonding film 20 according to this embodiment, the base material 1 supports the pressure-sensitive adhesive layer 2 and the die-bonding layer 3 .
In the dicing tape 10 according to this embodiment, the substrate 1 is a substrate for mounting a semiconductor wafer according to this embodiment.
As described above, the semiconductor wafer mounting substrate according to this embodiment has a breaking elongation at -15°C of 300% or more and a breaking strength at -15°C of 20 N /10 mm or more.

The semiconductor wafer mounting substrate preferably has at least one layer containing an elastomer resin.
In the semiconductor wafer mounting substrate, the elastomer resin is preferably an olefin-based elastomer resin.
Furthermore, the thickness of the semiconductor wafer mounting base is preferably 90 μm or more and 130 μm or less.

In the dicing die bond film 20 according to this embodiment, a semiconductor wafer is attached onto the die bond layer 3 .
When the semiconductor wafer is cut using the dicing die bond film 20, the die bond layer 3 is also cut together with the semiconductor wafer. The die bond layer 3 is cut into pieces having sizes corresponding to the sizes of the individual semiconductor chips. This makes it possible to obtain semiconductor chips with the die bond layer 3 attached thereto.

It is preferable that the die bond layer 3 has thermosetting properties. By including at least one of a thermosetting resin and a thermoplastic resin having a thermosetting functional group in the die bond layer 3, the die bond layer 3 can be made thermosetting.

When the die bond layer 3 contains a thermosetting resin, examples of such a thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. Among these, it is preferable to use an epoxy resin.

Epoxy resins include, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, orthocresol novolac type, trishydroxyphenylmethane type, tetraphenylolethane type, hydantoin type, trisglycidyl isocyanurate type, and glycidylamine type epoxy resins.

Examples of phenolic resins used as curing agents for epoxy resins include novolac-type phenolic resins, resol-type phenolic resins, and polyoxystyrenes such as polyparaoxystyrene.

When the die bond layer 3 contains a thermoplastic resin having a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. The acrylic resin in the thermosetting functional group-containing acrylic resin can be one containing a monomer unit derived from a (meth)acrylic acid ester.
In the case of a thermosetting resin having a thermosetting functional group, a curing agent is selected depending on the type of the thermosetting functional group.

The die bond layer 3 may contain a thermosetting catalyst in order to sufficiently advance the curing reaction of the resin component and to increase the curing reaction speed. Examples of thermosetting catalysts include imidazole-based compounds, triphenylphosphine-based compounds, amine-based compounds, and trihalogen borane-based compounds.

The die bond layer 3 may contain a thermoplastic resin. The thermoplastic resin functions as a binder. Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as polyamide 6 and polyamide 6,6, phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamideimide resin, fluororesin, etc. Only one type of the above thermoplastic resin may be used, or two or more types may be used in combination. As the above thermoplastic resin, acrylic resin is preferable from the viewpoint that it has a small amount of ionic impurities and has high heat resistance, making it easier to ensure the connection reliability by the die bond layer.

The acrylic resin is preferably a polymer containing a monomer unit derived from a (meth)acrylic acid ester as the monomer unit having the largest mass ratio. Examples of the (meth)acrylic acid ester include an alkyl (meth)acrylic acid ester, a cycloalkyl (meth)acrylic acid ester, and an aryl (meth)acrylic acid ester. The acrylic resin may contain a monomer unit derived from another component that is copolymerizable with the (meth)acrylic acid ester. Examples of the other components include functional group-containing monomers such as carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamides, and acrylonitriles, and various polyfunctional monomers. From the viewpoint of realizing a high cohesive force in the die bond layer, the acrylic resin is preferably a copolymer of a (meth)acrylic acid ester (particularly a (meth)acrylic acid alkyl ester having an alkyl group with 4 or less carbon atoms), a carboxy group-containing monomer, a nitrogen atom-containing monomer, and a polyfunctional monomer (particularly a polyglycidyl-based polyfunctional monomer), and more preferably a copolymer of ethyl acrylate, butyl acrylate, acrylic acid, acrylonitrile, and polyglycidyl (meth)acrylate.

The die bond layer 3 may contain one or more other components as necessary. Examples of the other components include a flame retardant, a silane coupling agent, and an ion trapping agent.

The thickness of the die bond layer 3 is not particularly limited, but is, for example, 1 μm or more and 180 μm or less. The thickness may be 20 μm or more and 160 μm or less, or 40 μm or more and 140 μm or less.
The thickness of the die bond layer 3 can be determined, for example, by measuring the thickness at five randomly selected points using a dial gauge (Model R-205, manufactured by PEACOCK) and calculating the arithmetic average of these thicknesses.

The dicing die bond film 20 according to this embodiment is used, for example, as an auxiliary tool for manufacturing a semiconductor integrated circuit. Specific examples of the use of the dicing die bond film 20 will be described below.
In the following, an example in which a dicing die bond film 20 having a substrate 1 made of a single layer is used will be described.

The method for manufacturing a semiconductor integrated circuit includes a half-cut process in which a groove is formed in the semiconductor wafer to process the semiconductor wafer into chips (dies) by a fracturing process, a back-grind process in which the semiconductor wafer after the half-cut process is ground to reduce its thickness, a mounting process in which one surface (the surface opposite to the circuit surface) of the semiconductor wafer after the back-grind process is attached to the die-bonding layer 3 and the semiconductor wafer is fixed to the dicing tape 10, an expanding process in which the space between the half-cut semiconductor chips is expanded, a kerf maintaining process in which the space between the semiconductor chips is maintained, a pick-up process in which the die-bonding layer 3 is peeled off from the adhesive layer 2 to remove the semiconductor chip (die) with the die-bonding layer 3 attached, and a die-bonding process in which the semiconductor chip (die) with the die-bonding layer 3 attached is attached to an adherend. When carrying out these processes, the dicing die-bonding film 20 of this embodiment is used as a manufacturing aid.

In the half-cut process, as shown in Figures 3A and 3B, a half-cut process is performed to cut the semiconductor integrated circuit into small pieces (dies). More specifically, a wafer processing tape T is attached to the surface opposite to the circuit surface of the semiconductor wafer W (see Figure 3A). A dicing ring R is attached to the wafer processing tape T (see Figure 3A). With the wafer processing tape T attached, a groove for division is formed (see Figure 3B). In the back-grind process, as shown in Figures 3C and 3D, the semiconductor wafer is ground to reduce its thickness. More specifically, a back-grind tape G is attached to the surface where the groove is formed, while the wafer processing tape T that was initially attached is peeled off (see Figure 3C). With the back-grind tape G attached, the semiconductor wafer W is ground until it reaches a predetermined thickness (see Figure 3D).

In the mounting process, as shown in Figures 4A and 4B, a dicing ring R is attached to the adhesive layer 2 of the dicing tape 10, and then a half-cut semiconductor wafer W is attached to the exposed surface of the die bond layer 3 (see Figure 4A). Then, the backgrind tape G is peeled off from the semiconductor wafer W (see Figure 4B).

In the expanding step, as shown in Figures 5A to 5C, the dicing ring R is fixed to a holder H of an expanding device. The dicing die bond film 20 is pushed up from below using a push-up member U provided in the expanding device, so that the dicing die bond film 20 is stretched so as to be expanded in the planar direction (see Figure 5B). As a result, the half-cut processed semiconductor wafer W is cleaved under specific temperature conditions. The above temperature conditions are, for example, -15 to 25°C, preferably -15 to 10°C, and more preferably -15 to 0°C. The expanded state is released by lowering the push-up member U (see Figure 4C).
6A and 6B, in the expanding step, the dicing tape 10 is stretched so as to expand its area under higher temperature conditions (for example, 20° C. to 50° C., preferably 30° C. to 50° C., and more preferably 40° C. to 50° C.), thereby separating adjacent cleaved semiconductor chips in the planar direction of the film surface, further increasing the gap between them.
Here, in the dicing die bond film 20 according to this embodiment, the substrate for mounting a semiconductor wafer according to this embodiment is used as the substrate 1, and the substrate for mounting a semiconductor wafer has a breaking elongation of 300% or more at −15° C. and a breaking strength of 20 N /10 mm or more at −15° C., so that in the expanding step, the substrate for mounting a semiconductor wafer is relatively difficult to break, and the die bond layer 3 can be relatively sufficiently fractured.
Furthermore, by having the substrate for mounting a semiconductor wafer have one layer containing an elastomer resin, the substrate for mounting a semiconductor wafer is more resistant to tearing in the expanding process, and the die bond layer 3 can be more sufficiently broken.
Furthermore, since the elastomer resin in the substrate for mounting a semiconductor wafer contains an olefin-based elastomer resin, the substrate for mounting a semiconductor wafer is even less likely to break in the expanding process, and the die bond layer 3 can be broken more sufficiently.
In addition, by having a thickness of the semiconductor wafer mounting substrate of 90 μm or more and 130 μm or less, the semiconductor wafer mounting substrate is more resistant to tearing in the expanding step, and the die bond layer can be more sufficiently broken.

A series of steps from the half-cutting step to the expanding step may be referred to as a "DBG (Dicing Before Grinding) cleaving process."
The half-cut process may be replaced with a modified region forming process in which a laser beam is irradiated along a planned dividing line in the semiconductor wafer to form a modified region, thereby making it possible to easily divide the semiconductor wafer along the planned dividing line. A series of steps from the modified region forming configuration to the expanding process may be referred to as an "SDBG (Stealth Dicing Before Grinding) cleaving process."

In the kerf maintenance process, as shown in FIG. 7, hot air (the setting of the device that generates the hot air is, for example, 200 to 250°C) is applied to the dicing tape 10 to thermally shrink the dicing tape 10, and then the dicing tape 10 is cooled and solidified to maintain the distance (kerf) between adjacent cut semiconductor chips.

In the pick-up process, as shown in FIG. 8, the semiconductor chip with the die bond layer 3 attached (hereinafter also referred to as the semiconductor chip with the die bond layer) is peeled off from the adhesive layer 2 of the dicing tape 10. In more detail, the pin member P is raised to push up the semiconductor chip with the die bond layer to be picked up through the dicing tape 10. The pushed-up semiconductor chip with the die bond layer is held by the suction jig J.

In the die bonding step, the semiconductor chip with the die bonding layer is bonded to an adherend (wiring board).
In the above-mentioned manufacturing method of the semiconductor integrated circuit, an example of using the dicing die bond film 20 as an auxiliary tool has been described, but the semiconductor integrated circuit can also be manufactured in the same manner as described above when the dicing tape 10 is used as the auxiliary tool.

The dicing die bond film of the present invention is not limited to the above-mentioned embodiment. The dicing die bond film of the present invention is also not limited by the above-mentioned action and effect. The dicing die bond film of the present invention can be modified in various ways without departing from the gist of the present invention.

Next, the present invention will be described in more detail with reference to examples. The following examples are intended to explain the present invention in more detail and are not intended to limit the scope of the present invention.

[Example 1]
<Forming of substrate (substrate for mounting semiconductor wafer)>
Using a two-type three-layer extrusion T-die molding machine, a substrate having a three-layer structure of A layer/B layer/C layer (a three-layer structure in which B layer is the central layer and A layer and C layer are laminated on both sides of B layer as outer layers; A layer is the first layer, B layer is the second layer, and C layer is the third layer) was molded.
The resin for layers A and C was a metallocene PP resin (product name: Wintech WXK1223, manufactured by Japan Polypropylene Corporation), and the metallocene PP resin contained 20% by mass of an antistatic agent.
The resin for layer B was a mixed resin of an elastomer resin and an EVA resin having a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin was Vistamax 3980 (manufactured by Exxon Mobil Corporation), which is a propylene-based elastomer resin, and the EVA resin (second EVA resin) having a vinyl acetate content of 10% by mass or more and 30% by mass or less was Evaflex (registered trademark) P1007 (manufactured by Dow Mitsui Polychemicals)).
In addition, in layer B, the elastomer resin and the second EVA resin were mixed so that the ratio _W1 of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin/elastomer resin) was 0.4 (i.e., Vistamax:Evaflex = 7:3).
The extrusion was performed at a die temperature of 190° C. That is, the A layer, the B layer, and the C layer were extruded at 190° C. The thickness of the substrate obtained by extrusion was 110 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer:B layer:C layer=1:10:1.
After the molded substrate was sufficiently solidified, the solidified substrate was wound into a roll so that Layer C became the innermost layer, that is, the innermost layer.
The thickness of the substrate in Example 1 was determined by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses.
The thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the substrate with a SEM. Specifically, the substrate was cut in the thickness direction using a freezing microtome (manufactured by Yamato Koki Kogyo Co., Ltd.), and the cross section was observed with a SEM.
The thickness of each layer was measured at any five points on the cut cross section, and the thickness of each layer was determined by arithmetically averaging the thickness values measured for each layer.
<Preparation of dicing tape>
The adhesive composition was applied to one surface of the rolled substrate using an applicator to a thickness of 30 μm. The substrate after the adhesive composition application was heated and dried at 110° C. for 3 minutes to form an adhesive layer, thereby obtaining a dicing tape according to Example 1.
The pressure-sensitive adhesive composition was prepared as follows.
First, 210 parts by mass of LA (lauryl acrylate), 170 parts by mass of INA (isononyl acrylate), 60 parts by mass of HEA (hydroxyethyl acrylate), and 1.0 part by mass of Niper BW (benzoyl peroxide) were mixed to obtain a first resin composition.
Next, the first resin composition was added into a round-bottom separable flask of a polymerization experimental apparatus equipped with a round-bottom separable flask (volume 1 L), a thermometer, a nitrogen inlet tube, and a stirring blade, and while stirring the first resin composition, the liquid temperature of the first resin composition was brought to room temperature (23°C), and the inside of the round-bottom separable flask was replaced with nitrogen for 6 hours.
While continuing to flow nitrogen into the round-bottom separable flask, the first resin composition was stirred while the liquid temperature of the first resin composition was maintained at 62° C. for 3 hours and then at 75° C. for 2 hours to polymerize the INA, the HEA, and the AIBN to obtain a second resin composition. Then, the flow of nitrogen into the round-bottom separable flask was stopped.
The second resin composition was cooled until the liquid temperature reached room temperature, and then 48 parts by mass of 2-isocyanatoethyl methacrylate (manufactured by Showa Denko K.K., product name "Karenz MOI (registered trademark)") and 0.1 parts by mass of dibutyltin dilaurate IV (manufactured by Wako Pure Chemical Industries, Ltd.) were added to the second resin composition as a compound having a polymerizable carbon-carbon double bond, and the resulting third resin composition was stirred at a liquid temperature of 50°C under an air atmosphere.
Next, 1.5 parts by mass of Coronate L (isocyanate compound) and 5 parts by mass of Omnirad 127D (photopolymerization initiator) were added to 100 parts by mass of the polymer solid content of the third resin composition to prepare a pressure-sensitive adhesive composition.
<Preparation of dicing die bond film>
100 parts by mass of acrylic resin (manufactured by Nagase ChemteX Corporation, trade name "SG-N80", glass transition temperature -23°C), 210 parts by mass of epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name "EPPN 501HY"), 100 parts by mass of phenolic resin (manufactured by Gun-ei Chemical Industry Co., Ltd., trade name "LVR8210-DL"), 33 parts by mass of phenolic resin (manufactured by Meiwa Kasei Co., Ltd., trade name "HF-1M"), 440 parts by mass of spherical silica (manufactured by Admatechs Co., Ltd., trade name "SE-2050MCV"), 3 parts by mass of a silane coupling agent (manufactured by Shin-Etsu Chemical Co., Ltd., trade name "KBM-303"), and 0.5 parts by mass of a curing catalyst (manufactured by Hokko Chemical Co., Ltd., trade name "TPP-K") were added to methyl ethyl ketone and mixed to obtain a die bond composition.
Next, the die-bonding composition was applied to the silicone-treated surface of a PET-based separator (thickness 50 μm) as a release liner by using an applicator to a thickness of 40 μm, and the die-bonding composition was dried at 130° C. for 2 minutes to remove the solvent, and an adhesive film of 40 μm was prepared on the release liner. Then, the three adhesive films thus prepared were laminated using a roll laminator to prepare an adhesive film of 120 μm in thickness. In this lamination, the lamination speed was 10 mm/sec, the temperature condition was 90° C., and the pressure condition was 0.15 MPa.
Next, the side of the die bond sheet on which the release sheet was not laminated was attached to the adhesive layer of the dicing tape of Example 1, and then the release liner was peeled off from the die bond layer to obtain a dicing die bond film having a die bond layer (i.e., the dicing die bond film of Example 1).

[Example 2]
<Forming of substrate (substrate for mounting semiconductor wafer)>
Using a two-type three-layer extrusion T-die molding machine, a substrate having a three-layer structure of A layer/B layer/C layer (a three-layer structure in which B layer is the central layer and A layer and C layer are laminated on both sides of B layer as outer layers; A layer is the first layer, B layer is the second layer, and C layer is the third layer) was molded.
The resin for layers A and C was a mixed resin of an elastomer resin and an EVA resin having a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin was Vistamax 3980 (manufactured by Exxon Mobil Corporation), which is a propylene-based elastomer resin, and the EVA resin (second EVA resin) having a vinyl acetate content of 10% by mass or more and 30% by mass or less was Evaflex (registered trademark) P1007 (manufactured by Dow Mitsui Polychemicals)), and this mixed resin was made to contain 20% by mass of an antistatic agent.
The resin for layer B was a mixed resin of an elastomer resin and an EVA resin having a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin was Vistamax 3980 (manufactured by Exxon Mobil Corporation), which is a propylene-based elastomer resin, and the EVA resin (second EVA resin) having a vinyl acetate content of 10% by mass or more and 30% by mass or less was Evaflex (registered trademark) P1007 (manufactured by Dow Mitsui Polychemicals)).
In the A layer, the B layer, and the C layer, the elastomer resin and the second EVA resin were mixed so that the ratio _W1 of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin/elastomer resin) was 0.4 (i.e., Vistamax:Evaflex=7:3).
The extrusion was performed at a die temperature of 190° C. That is, the A layer, the B layer, and the C layer were extruded at 190° C. The thickness of the substrate obtained by extrusion was 110 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer:B layer:C layer=1:10:1.
After the molded substrate was sufficiently solidified, the solidified substrate was wound into a roll so that Layer C became the innermost layer, that is, the innermost layer.
The thickness of the substrate in Example 2 was determined by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses.
The thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the substrate with a SEM, as described in Example 1.
<Preparation of dicing tape>
In the same manner as in Example 1, a dicing tape according to Example 2 was produced.
<Preparation of dicing die bond film>
In the same manner as in Example 1, a dicing die bond film according to Example 2 was produced.

[Example 3]
<Forming of substrate (substrate for mounting semiconductor wafer)>
Using a two-type two-layer extrusion T-die molding machine, a substrate having a two-layer structure of A layer/B layer (a two-layer structure in which A layer is laminated onto B layer; the A layer is the first layer and the B layer is the second layer) was molded.
The resin used for layer A was a metallocene PP resin (product name: Wintech WXK1223, manufactured by Japan Polypropylene Corporation), and the metallocene PP resin contained 20% by mass of an antistatic agent.
The resin for layer B was a mixed resin of an elastomer resin and an EVA resin having a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin was Vistamax 3980 (manufactured by Exxon Mobil Corporation), which is a propylene-based elastomer resin, and the EVA resin (second EVA resin) having a vinyl acetate content of 10% by mass or more and 30% by mass or less was Evaflex (registered trademark) P1007 (manufactured by Dow Mitsui Polychemicals)).
In addition, in layer B, the elastomer resin and the second EVA resin were mixed so that the ratio _W1 of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin/elastomer resin) was 0.4 (i.e., Vistamax:Evaflex = 7:3).
The extrusion was performed at a die temperature of 190° C. That is, the A layer and the B layer were extruded at 190° C. The thickness of the substrate obtained by extrusion was 110 μm. The thickness ratio of the A layer to the B layer (layer thickness ratio) was A layer:B layer=1:20.
After the molded substrate was sufficiently solidified, the solidified substrate was wound into a roll so that Layer B became the innermost layer, that is, the innermost layer.
The thickness of the substrate in Example 3 was determined by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses.
The thicknesses of the A layer and the B layer were measured by observing the cross section of the substrate with a SEM, as described in Example 1.
<Preparation of dicing tape>
In the same manner as in Example 1, a dicing tape according to Example 3 was produced.
<Preparation of dicing die bond film>
In the same manner as in Example 1, a dicing die bond film according to Example 3 was produced.

[Example 4]
<Forming of substrate (substrate for mounting semiconductor wafer)>
Using a two-type three-layer extrusion T-die molding machine, a substrate having a three-layer structure of A layer/B layer/C layer (a three-layer structure in which B layer is the central layer and A layer and C layer are laminated on both sides of B layer as outer layers; A layer is the first layer, B layer is the second layer, and C layer is the third layer) was molded.
The resin for layers A and C was a mixed resin of an elastomer resin and an EVA resin having a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin was Vistamax 3980 (manufactured by Exxon Mobil Corporation), which is a propylene-based elastomer resin, and the EVA resin (second EVA resin) having a vinyl acetate content of 10% by mass or more and 30% by mass or less was Evaflex (registered trademark) P1007 (manufactured by Dow Mitsui Polychemicals)), and this mixed resin was made to contain 20% by mass of an antistatic agent.
The resin for layer B was a mixed resin of an elastomer resin and an EVA resin having a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin was Vistamax 3980 (manufactured by Exxon Mobil Corporation), which is a propylene-based elastomer resin, and the EVA resin (second EVA resin) having a vinyl acetate content of 10% by mass or more and 30% by mass or less was Evaflex (registered trademark) P1007 (manufactured by Dow Mitsui Polychemicals)).
In the A layer, the B layer, and the C layer, the elastomer resin and the second EVA resin were mixed so that the ratio _W1 of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin/elastomer resin) was 0.4 (i.e., Vistamax:Evaflex=7:3).
The extrusion was performed at a die temperature of 190° C. That is, the A layer, the B layer, and the C layer were extruded at 190° C. The thickness of the substrate obtained by extrusion was 120 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer:B layer:C layer=1:10:1.
After the molded substrate was sufficiently solidified, the solidified substrate was wound into a roll so that Layer C became the innermost layer, that is, the innermost layer.
The thickness of the substrate in Example 4 was determined by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses.
The thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the substrate with a SEM, as described in Example 1.
<Preparation of dicing tape>
In the same manner as in Example 1, a dicing tape according to Example 4 was produced.
<Preparation of dicing die bond film>
In the same manner as in Example 1, a dicing die bond film according to Example 4 was produced.

[Example 5]
<Forming of substrate (substrate for mounting semiconductor wafer)>
Using a two-type two-layer extrusion T-die molding machine, a substrate having a two-layer structure of A layer/B layer (a two-layer structure in which A layer is laminated onto B layer; the A layer is the first layer and the B layer is the second layer) was molded.
The resin used for layer A was a metallocene PP resin (product name: Wintech WXK1223, manufactured by Japan Polypropylene Corporation), and the metallocene PP resin contained 20% by mass of an antistatic agent.
The resin for layer B was a mixed resin of an elastomer resin and an EVA resin having a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin was Vistamax 3980 (manufactured by Exxon Mobil Corporation), which is a propylene-based elastomer resin, and the EVA resin (second EVA resin) having a vinyl acetate content of 10% by mass or more and 30% by mass or less was Evaflex (registered trademark) P1007 (manufactured by Dow Mitsui Polychemicals)).
In addition, in layer B, the elastomer resin and the second EVA resin were mixed so that the ratio _W1 of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin/elastomer resin) was 0.4 (i.e., Vistamax:Evaflex = 7:3).
The extrusion was performed at a die temperature of 190° C. That is, the A layer and the B layer were extruded at 190° C. The thickness of the substrate obtained by extrusion was 120 μm. The thickness ratio of the A layer to the B layer (layer thickness ratio) was A layer:B layer=1:20.
After the molded substrate was sufficiently solidified, the solidified substrate was wound into a roll so that Layer B became the innermost layer, that is, the innermost layer.
The thickness of the substrate in Example 5 was determined by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses.
The thicknesses of the A layer and the B layer were measured by observing the cross section of the substrate with a SEM, as described in Example 1.
<Preparation of dicing tape>
In the same manner as in Example 1, a dicing tape according to Example 5 was produced.
<Preparation of dicing die bond film>
In the same manner as in Example 1, a dicing die bond film according to Example 5 was produced.

[Example 6]
<Forming of substrate (substrate for mounting semiconductor wafer)>
Using a two-type three-layer extrusion T-die molding machine, a substrate having a three-layer structure of A layer/B layer/C layer (a three-layer structure in which B layer is the central layer and A layer and C layer are laminated on both sides of B layer as outer layers; A layer is the first layer, B layer is the second layer, and C layer is the third layer) was molded.
The resin for layers A and C was a metallocene PP resin (product name: Wintech WXK1223, manufactured by Japan Polypropylene Corporation), and the metallocene PP resin contained 20% by mass of an antistatic agent.
The resin for layer B was a mixed resin of an elastomer resin and an EVA resin having a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin was Vistamax 3980 (manufactured by Exxon Mobil Corporation), which is a propylene-based elastomer resin, and the EVA resin (second EVA resin) having a vinyl acetate content of 10% by mass or more and 30% by mass or less was Evaflex (registered trademark) P1007 (manufactured by Dow Mitsui Polychemicals)).
In addition, in layer B, the elastomer resin and the second EVA resin were mixed so that the ratio _W1 of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin/elastomer resin) was 0.4 (i.e., Vistamax:Evaflex = 7:3).
The extrusion was performed at a die temperature of 190° C. That is, the A layer, the B layer, and the C layer were extruded at 190° C. The thickness of the substrate obtained by extrusion was 110 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer:B layer:C layer=1:15:1.
After the molded substrate was sufficiently solidified, the solidified substrate was wound into a roll so that Layer C became the innermost layer, that is, the innermost layer.
The thickness of the substrate in Example 1 was determined by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses.
The thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the substrate with a SEM, as described in Example 1.
<Preparation of dicing tape>
In the same manner as in Example 1, a dicing tape according to Example 6 was produced.
<Preparation of dicing die bond film>
In the same manner as in Example 1, a dicing die bond film according to Example 6 was produced.

[Example 7]
<Forming of substrate (substrate for mounting semiconductor wafer)>
Using a two-type three-layer extrusion T-die molding machine, a substrate having a three-layer structure of A layer/B layer/C layer (a three-layer structure in which B layer is the central layer and A layer and C layer are laminated on both sides of B layer as outer layers; A layer is the first layer, B layer is the second layer, and C layer is the third layer) was molded.
The resin for layers A and C was a mixed resin of metallocene PP resin and ionomer resin (the metallocene PP resin was Wintech WXK1223 (manufactured by Japan Polypropylene Corporation)), and this mixed resin contained 20 mass % of an antistatic agent.
The resin for layer B was a mixed resin of an elastomer resin and an EVA resin having a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin was Vistamax 3980 (manufactured by Exxon Mobil Corporation), which is a propylene-based elastomer resin, and the EVA resin (second EVA resin) having a vinyl acetate content of 10% by mass or more and 30% by mass or less was Evaflex (registered trademark) P1007 (manufactured by Dow Mitsui Polychemicals)).
In the layers A and C, the metallocene PP resin and the ionomer resin were mixed so that the ratio _W2 of the mass of the metallocene PP resin to the mass of the ionomer resin (ionomer resin/metallocene PP resin) was 0.4.
In addition, in layer B, the elastomer resin and the second EVA resin were mixed so that the ratio _W1 of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin/elastomer resin) was 0.4 (i.e., Vistamax:Evaflex = 7:3).
The extrusion was performed at a die temperature of 190° C. That is, the A layer, the B layer, and the C layer were extruded at 190° C. The thickness of the substrate obtained by extrusion was 110 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer:B layer:C layer=1:10:1.
After the molded substrate was sufficiently solidified, the solidified substrate was wound into a roll so that Layer C became the innermost layer, that is, the innermost layer.
The thickness of the substrate in Example 1 was determined by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses.
The thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the substrate with a SEM, as described in Example 1.
<Preparation of dicing tape>
In the same manner as in Example 1, a dicing tape according to Example 7 was produced.
<Preparation of dicing die bond film>
In the same manner as in Example 1, a dicing die bond film according to Example 7 was produced.

[Example 8]
<Forming of substrate (substrate for mounting semiconductor wafer)>
A single-layered substrate was formed using a single-layer extrusion T-die molding machine.
The resin constituting the single layer was an EVA resin with a vinyl acetate content of 10% by mass.
The extrusion was performed at a die temperature of 190° C. The thickness of the substrate obtained by extrusion was 125 μm.
After the molded substrate was sufficiently solidified, the solidified substrate was wound into a roll to form a roll body.
The thickness of the substrate in Example 8 was measured at five randomly selected points using a dial gauge (Model R-205, manufactured by PEACOCK) and calculated by arithmetic averaging.
<Preparation of dicing tape>
In the same manner as in Example 1, a dicing tape according to Example 8 was produced.
<Preparation of dicing die bond film>
In the same manner as in Example 1, a dicing die bond film according to Example 8 was produced.

[Example 9]
<Forming of substrate (substrate for mounting semiconductor wafer)>
Using a two-type three-layer extrusion T-die molding machine, a substrate having a three-layer structure of A layer/B layer/C layer (a three-layer structure in which B layer is the central layer and A layer and C layer are laminated on both sides of B layer as outer layers; A layer is the first layer, B layer is the second layer, and C layer is the third layer) was molded.
The resin for layers A and C was a metallocene PP resin (product name: Wintech WXK1223, manufactured by Japan Polypropylene Corporation), and the metallocene PP resin contained 20% by mass of an antistatic agent.
The resin used for the layer B was an EVA resin having a vinyl acetate content of 20% by mass or more (the first EVA resin, product name: Evaflex (registered trademark) EV250, manufactured by Dow Mitsui Polychemicals).
The extrusion was performed at a die temperature of 190° C. That is, the A layer, the B layer, and the C layer were extruded at 190° C. The thickness of the substrate obtained by extrusion was 100 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer:B layer:C layer=1:10:1.
After the molded substrate was sufficiently solidified, the solidified substrate was wound into a roll so that Layer C became the innermost layer, that is, the innermost layer.
The thickness of the substrate in Example 9 was measured at five randomly selected points using a dial gauge (Peacock Corporation, model R-205) and calculated by arithmetic averaging.
The thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the substrate with a SEM, as described in Example 1.
<Preparation of dicing tape>
In the same manner as in Example 1, a dicing tape according to Example 9 was produced.
<Preparation of dicing die bond film>
In the same manner as in Example 1, a dicing die bond film according to Example 9 was produced.

[Comparative Example 1]
<Forming of substrate (substrate for mounting semiconductor wafer)>
Using a two-type three-layer extrusion T-die molding machine, a substrate having a three-layer structure of A layer/B layer/C layer (a three-layer structure in which B layer is the central layer and A layer and C layer are laminated on both sides of B layer as outer layers; A layer is the first layer, B layer is the second layer, and C layer is the third layer) was molded.
The resin for layers A and C was a metallocene PP resin (product name: Wintech WXK1223, manufactured by Japan Polypropylene Corporation), and the metallocene PP resin contained 20% by mass of an antistatic agent.
The resin used for the layer B was an EVA resin having a vinyl acetate content of 20% by mass or more (the first EVA resin, product name: Evaflex (registered trademark) EV250, manufactured by Dow Mitsui Polychemicals).
The extrusion was performed at a die temperature of 190° C. That is, the A layer, the B layer, and the C layer were extruded at 190° C. The thickness of the substrate obtained by extrusion was 80 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer:B layer:C layer=1:10:1.
After the molded substrate was sufficiently solidified, the solidified substrate was wound into a roll so that Layer C became the innermost layer, that is, the innermost layer.
The thickness of the substrate in Example 9 was measured at five randomly selected points using a dial gauge (Peacock Corporation, model R-205) and calculated by arithmetic averaging.
The thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the substrate with a SEM, as described in Example 1.
<Preparation of dicing tape>
In the same manner as in Example 1, a dicing tape according to Comparative Example 1 was produced.
<Preparation of dicing die bond film>
In the same manner as in Example 1, a dicing die bond film according to Comparative Example 1 was produced.

[Comparative Example 2]
<Forming of substrate (substrate for mounting semiconductor wafer)>
Using a two-type three-layer extrusion T-die molding machine, a substrate having a three-layer structure of A layer/B layer/C layer (a three-layer structure in which B layer is the central layer and A layer and C layer are laminated on both sides of B layer as outer layers; A layer is the first layer, B layer is the second layer, and C layer is the third layer) was molded.
The resin for layers A and C was a metallocene PP resin (product name: Wintech WXK1223, manufactured by Japan Polypropylene Corporation), and the metallocene PP resin contained 20% by mass of an antistatic agent.
The resin for layer B was a mixed resin of an elastomer resin and an EVA resin having a vinyl acetate content of 10% by mass or more and 30% by mass or less (the elastomer resin was Vistamax 3980 (manufactured by Exxon Mobil Corporation), which is a propylene-based elastomer resin, and the EVA resin (second EVA resin) having a vinyl acetate content of 10% by mass or more and 30% by mass or less was Evaflex (registered trademark) P1007 (manufactured by Dow Mitsui Polychemicals)).
In the layer B, the elastomer resin and the second EVA resin were mixed so that the ratio _W1 of the mass of the elastomer resin to the mass of the second EVA resin (second EVA resin/elastomer resin) was 0.4.
The extrusion was performed at a die temperature of 190° C. That is, the A layer, the B layer, and the C layer were extruded at 190° C. The thickness of the substrate obtained by extrusion was 110 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer:B layer:C layer=1:5:1.
After the molded substrate was sufficiently solidified, the solidified substrate was wound into a roll so that Layer C became the innermost layer, that is, the innermost layer.
The thickness of the substrate in Example 1 was determined by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses.
The thicknesses of the A layer, the B layer, and the C layer were measured by observing the cross section of the substrate with a SEM, as described in Example 1.
<Preparation of dicing tape>
In the same manner as in Example 1, a dicing tape according to Comparative Example 2 was produced.
<Preparation of dicing die bond film>
In the same manner as in Example 1, a dicing die bond film according to Comparative Example 2 was produced.

(Breaking elongation and breaking strength at -15°C)
The breaking elongation and breaking strength at -15°C were measured for the substrates according to the respective examples.
The breaking elongation at -15°C and the breaking strength at -15°C were determined as follows.
Specifically, for the breaking elongation, a dicing tape having a length of 120 mm (measurement length, L ₀ ) and a width of 10 mm was used as a test piece, and the test piece was pulled in the longitudinal direction using a tensile tester (Autograph AG-IS, manufactured by Shimadzu Corporation) under conditions of a temperature of -15°C, a chuck distance of 50 mm, and a tensile speed of 1000 mm/min, and the length (L ₁ ) at which the test piece broke was measured.
Then, the breaking elongation E at −15° C. was calculated based on the following formula.

Breaking elongation E=(L ₁ −L ₀ )/L ₀ ×100

The breaking strength was determined by measuring the force applied when the test piece broke when a tensile test was performed under the same conditions as above using the test piece and the tensile tester.
The breaking elongation and breaking strength measured for the substrates of each example are shown in Table 1 below.

(Die-bond layer breakability and substrate breakage)
A semiconductor wafer (planar dimensions 12 inches (300 mm), thickness 0.060 mm. The semiconductor wafer was cut into multiple semiconductor chips having a size of 10 mm length x 5 mm width by DBG) and a dicing ring were attached to the dicing die bond film of each example. Next, the semiconductor wafer and the die bond layer were cut (mainly the die bond layer) using a die separator DDS2300 (manufactured by Disco Corporation), and the cuttability of the die bond layer and the breakage of the substrate were evaluated.
The semiconductor wafer is divided into semiconductor chips having the size (length 10 mm×width 5 mm×thickness 0.060 mm) cut by the DBG through the above-mentioned cutting.

The fracture property of the die bond layer was evaluated in detail as follows.
First, the semiconductor wafer and the die bond layer were cleaved in a cool expander unit under conditions of an expansion temperature of −15° C., an expansion speed of 200 mm/sec, and an expansion amount of 15 mm to obtain a semiconductor chip with a die bond layer.
Next, expansion was performed under the conditions of room temperature, expansion speed of 1 mm/sec, and expansion amount of 7 mm. Then, while maintaining the expanded state, the dicing die bond film at the boundary with the outer periphery of the bare wafer was thermally shrunk under the conditions of a heat temperature of 250° C., a heat distance of 20 mm, and a rotation speed of 5°/sec.
Next, the fractured portion of the semiconductor chip with the die bond layer was observed by a microscope, and the fracture rate was calculated. Then, a fracture rate of 90% or more was evaluated as ◯, a fracture rate of 80% or more but less than 90% was evaluated as △, and a fracture rate of less than 80% was evaluated as ×.
Regarding breakage of the substrate, after obtaining a semiconductor chip with a die bond layer in a cool expand unit, the substrate was visually observed, and a substrate that did not break at all was rated as ◯, a substrate that had locally stretched was rated as △, and a substrate that had cracks was rated as ×.
For each example, the breakability of the die bond layer and the breakage of the substrate were evaluated, and the results are shown in Table 1 below.

(Kerf retention)
A semiconductor wafer (planar dimensions 12 inches (300 mm), thickness 0.060 mm. The semiconductor wafer was cut into multiple semiconductor chips having a size of 10 mm length x 5 mm width by DBG) and a dicing ring were attached to the dicing die bond film of each example. Next, the semiconductor wafer and the die bond layer were cut (mainly the die bond layer) using a die separator DDS2300 (manufactured by Disco Corporation), and the kerf retention after cutting was evaluated.
The semiconductor wafer is divided into semiconductor chips having the size (length 10 mm×width 5 mm×thickness 0.060 mm) cut by the DBG through the above-mentioned cutting.

The kerf retention was evaluated in detail as follows.
First, the bare wafer and the die bond layer were cleaved in a cool expander unit under conditions of an expansion temperature of −15° C., an expansion speed of 200 mm/sec, and an expansion amount of 15 mm to obtain a plurality of semiconductor chips with a die bond layer.
Next, room temperature expansion was performed under the conditions of room temperature, expansion speed of 1 mm/sec, and expansion amount of 7 mm. Then, while maintaining the expanded state, the dicing die bond film at the boundary with the outer periphery of the bare wafer was thermally shrunk under the conditions of heat temperature of 250° C., heat distance of 20 mm, and rotation speed of 5°/sec.
Next, the kerf was measured using a digital microscope (VHX-6000, manufactured by Keyence Corporation). More specifically, after the heat expansion was completed (after the heat shrinkage), the interval between one chip and another chip in the cleaved portion (hereinafter also referred to as the interval length) was observed with a digital microscope to measure the interval length. The interval length was measured in each of the MD and TD directions at five arbitrarily selected points. The minimum value of the interval length measurements was used as the kerf.
If the kerf was 30 μm or more, it was evaluated as ○ (the kerf was sufficiently maintained), if the kerf was 20 μm or more but less than 30 μm, it was evaluated as △ (the kerf was maintained but not sufficiently), and if the kerf was 20 μm or less, it was evaluated as × (the kerf was not sufficiently maintained).
The five arbitrarily selected locations are four locations on the outermost periphery of the circular wafer that are spaced apart from each other by approximately 90° in the circumferential direction, and the vicinity of the center of the circular wafer.

From Table 1, it can be seen that in Examples 1 to 9, the fracture properties of the die bond layer were all evaluated as O or △, and no evaluation was found for X, whereas in Comparative Example 1, the fracture properties of the die bond layer were evaluated as X.
Furthermore, from Table 1, it can be seen that in Examples 1 to 9, the evaluation of the substrate breakage was either ◯ or △, and no × was observed, whereas in Comparative Example 2, the evaluation of the substrate breakage was ×.
These results show that by making the substrate have a breaking elongation of 300% or more at -15°C and a breaking strength of 20 N /10 mm or more at -15°C, it is possible to achieve both improved breakability of the dicing tape and suppression of tearing of the substrate.
In addition, in Examples 1 to 9, the evaluation of the kerf retention was either ◯ or Δ, and no x was observed.
From this, it can be seen that in Examples 1 to 9, the maintenance of the kerf is also relatively good.

REFERENCE SIGNS LIST 1 Substrate 2 Adhesive layer 3 Die bond layer 10 Dicing tape 20 Dicing die bond film G Back grind tape H Holder J Suction jig P Pin member R Dicing ring T Wafer processing tape U Push-up member W Semiconductor wafer

Claims (5)

The non-elastomer layer has a tensile storage modulus at room temperature (23° C.) higher than that of the elastomer layer,
The tensile storage modulus of the elastomer layer at room temperature is 10 MPa or more and 100 MPa or less,
A substrate for mounting semiconductor wafers, the substrate having a breaking elongation of 300% or more at -15°C and a breaking strength of 20 N /10 mm or more at -15°C. The semiconductor wafer mounting substrate according to claim 1 , wherein the elastomer resin is an olefin-based elastomer resin. The substrate for mounting a semiconductor wafer according to claim 1 or 2 , which has a thickness of 90 μm or more and 130 μm or less. A substrate;
A pressure-sensitive adhesive layer laminated on the substrate,
A dicing tape, wherein the substrate is the semiconductor wafer mounting substrate according to claim 1 . A dicing tape having a pressure-sensitive adhesive layer laminated on a substrate;
a die bond layer laminated on the pressure-sensitive adhesive layer of the dicing tape;
A dicing die bond film, wherein the substrate is the substrate for mounting a semiconductor wafer according to claim 1 .