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JP7642125B2 - Semiconductor coolers and beauty or physical therapy equipment - Google Patents
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JP7642125B2 - Semiconductor coolers and beauty or physical therapy equipment - Google Patents

Semiconductor coolers and beauty or physical therapy equipment Download PDF

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JP7642125B2
JP7642125B2 JP2024059006A JP2024059006A JP7642125B2 JP 7642125 B2 JP7642125 B2 JP 7642125B2 JP 2024059006 A JP2024059006 A JP 2024059006A JP 2024059006 A JP2024059006 A JP 2024059006A JP 7642125 B2 JP7642125 B2 JP 7642125B2
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temperature
semiconductor cooler
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temperature surface
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瑩 周
文兵 黄
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深▲せん▼市予一電子科技有限公司
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    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61NELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00Radiation therapy
    • A61N5/06Radiation therapy using light
    • A61N5/0613Apparatus adapted for a specific treatment
    • A61N5/0616Skin treatment other than tanning
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61FFILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
    • A61F7/00Heating or cooling appliances for medical or therapeutic treatment of the human body
    • A61F7/10Cooling bags, e.g. ice-bags
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61FFILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
    • A61F7/00Heating or cooling appliances for medical or therapeutic treatment of the human body
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61HPHYSICAL THERAPY APPARATUS, e.g. DEVICES FOR LOCATING OR STIMULATING REFLEX POINTS IN THE BODY; ARTIFICIAL RESPIRATION; MASSAGE; BATHING DEVICES FOR SPECIAL THERAPEUTIC OR HYGIENIC PURPOSES OR SPECIFIC PARTS OF THE BODY
    • A61H23/00Percussion or vibration massage, e.g. using supersonic vibration; Suction-vibration massage; Massage with moving diaphragms
    • A61H23/02Percussion or vibration massage, e.g. using supersonic vibration; Suction-vibration massage; Massage with moving diaphragms with electric or magnetic drive
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61NELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N1/00Electrotherapy; Circuits therefor
    • A61N1/18Applying electric currents by contact electrodes
    • A61N1/32Applying electric currents by contact electrodes alternating or intermittent currents
    • A61N1/328Applying electric currents by contact electrodes alternating or intermittent currents for improving the appearance of the skin, e.g. facial toning or wrinkle treatment
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61NELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N1/00Electrotherapy; Circuits therefor
    • A61N1/18Applying electric currents by contact electrodes
    • A61N1/32Applying electric currents by contact electrodes alternating or intermittent currents
    • A61N1/36Applying electric currents by contact electrodes alternating or intermittent currents for stimulation
    • A61N1/36014External stimulators, e.g. with patch electrodes
    • A61N1/3603Control systems
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61NELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N1/00Electrotherapy; Circuits therefor
    • A61N1/40Applying electric fields by inductive or capacitive coupling ; Applying radio-frequency signals
    • A61N1/403Applying electric fields by inductive or capacitive coupling ; Applying radio-frequency signals for thermotherapy, e.g. hyperthermia
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61NELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00Radiation therapy
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61NELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00Radiation therapy
    • A61N5/06Radiation therapy using light
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61FFILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
    • A61F7/00Heating or cooling appliances for medical or therapeutic treatment of the human body
    • A61F2007/0001Body part
    • A61F2007/0052Body part for treatment of skin or hair
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61FFILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
    • A61F7/00Heating or cooling appliances for medical or therapeutic treatment of the human body
    • A61F2007/0086Heating or cooling appliances for medical or therapeutic treatment of the human body with a thermostat
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61FFILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
    • A61F7/00Heating or cooling appliances for medical or therapeutic treatment of the human body
    • A61F2007/0095Heating or cooling appliances for medical or therapeutic treatment of the human body with a temperature indicator
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61HPHYSICAL THERAPY APPARATUS, e.g. DEVICES FOR LOCATING OR STIMULATING REFLEX POINTS IN THE BODY; ARTIFICIAL RESPIRATION; MASSAGE; BATHING DEVICES FOR SPECIAL THERAPEUTIC OR HYGIENIC PURPOSES OR SPECIFIC PARTS OF THE BODY
    • A61H2201/00Characteristics of apparatus not provided for in the preceding codes
    • A61H2201/02Characteristics of apparatus not provided for in the preceding codes heated or cooled
    • A61H2201/0207Characteristics of apparatus not provided for in the preceding codes heated or cooled heated
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61HPHYSICAL THERAPY APPARATUS, e.g. DEVICES FOR LOCATING OR STIMULATING REFLEX POINTS IN THE BODY; ARTIFICIAL RESPIRATION; MASSAGE; BATHING DEVICES FOR SPECIAL THERAPEUTIC OR HYGIENIC PURPOSES OR SPECIFIC PARTS OF THE BODY
    • A61H2201/00Characteristics of apparatus not provided for in the preceding codes
    • A61H2201/02Characteristics of apparatus not provided for in the preceding codes heated or cooled
    • A61H2201/0214Characteristics of apparatus not provided for in the preceding codes heated or cooled cooled
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61HPHYSICAL THERAPY APPARATUS, e.g. DEVICES FOR LOCATING OR STIMULATING REFLEX POINTS IN THE BODY; ARTIFICIAL RESPIRATION; MASSAGE; BATHING DEVICES FOR SPECIAL THERAPEUTIC OR HYGIENIC PURPOSES OR SPECIFIC PARTS OF THE BODY
    • A61H2201/00Characteristics of apparatus not provided for in the preceding codes
    • A61H2201/16Physical interface with patient
    • A61H2201/1602Physical interface with patient kind of interface, e.g. head rest, knee support or lumbar support
    • A61H2201/1609Neck
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61HPHYSICAL THERAPY APPARATUS, e.g. DEVICES FOR LOCATING OR STIMULATING REFLEX POINTS IN THE BODY; ARTIFICIAL RESPIRATION; MASSAGE; BATHING DEVICES FOR SPECIAL THERAPEUTIC OR HYGIENIC PURPOSES OR SPECIFIC PARTS OF THE BODY
    • A61H2201/00Characteristics of apparatus not provided for in the preceding codes
    • A61H2201/16Physical interface with patient
    • A61H2201/1602Physical interface with patient kind of interface, e.g. head rest, knee support or lumbar support
    • A61H2201/1614Shoulder, e.g. for neck stretching
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61NELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00Radiation therapy
    • A61N2005/002Cooling systems
    • A61N2005/007Cooling systems for cooling the patient
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61NELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
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    • A61N5/06Radiation therapy using light
    • A61N2005/0626Monitoring, verifying, controlling systems and methods
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    • A61N5/00Radiation therapy
    • A61N5/06Radiation therapy using light
    • A61N2005/065Light sources therefor
    • A61N2005/0654Lamps
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    • A61NELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
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    • A61N5/06Radiation therapy using light
    • A61N2005/0658Radiation therapy using light characterised by the wavelength of light used
    • A61N2005/0659Radiation therapy using light characterised by the wavelength of light used infrared
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  • Biomedical Technology (AREA)
  • Engineering & Computer Science (AREA)
  • Animal Behavior & Ethology (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Radiology & Medical Imaging (AREA)
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  • Oral & Maxillofacial Surgery (AREA)
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  • Epidemiology (AREA)
  • Physical Education & Sports Medicine (AREA)
  • Rehabilitation Therapy (AREA)
  • Radiation-Therapy Devices (AREA)
  • Thermotherapy And Cooling Therapy Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Description

本願は半導体冷却の技術分野に関し、特に半導体クーラー及び美容又は理学療法器具に関する。 This application relates to the technical field of semiconductor cooling, and in particular to semiconductor coolers and cosmetic or physical therapy devices.

半導体クーラーは熱電クーラー(TEC、Thermoelectric Cooler)、熱ポンプ又はペルチェクーラー(Peltier cooler)とも称される。p&n型の2種類のユニークな半導体を用いるものであり、p型及びn型の半導体粒子が熱的に互いに交互に平行に配置され、電気的に直列接続されて半導体電気双極子層を形成し、半導体電気双極子層は片側が冷却基板に接続されて低温面を形成し、他側が熱伝導基板に接続されて高温面を形成する。直流電流が半導体のノードを流れる場合、温度差が生じ、低温面が熱を吸収し、次に半導体電気双極子粒子により熱を高温面に伝達する。 Semiconductor coolers are also called thermoelectric coolers (TECs), heat pumps or Peltier coolers. They use two unique semiconductors, p and n types, where p and n type semiconductor particles are thermally arranged in parallel with each other and electrically connected in series to form a semiconductor electric dipole layer, one side of which is connected to a cooling substrate to form a low temperature surface, and the other side is connected to a heat conducting substrate to form a high temperature surface. When a direct current flows through the semiconductor node, a temperature difference is generated, and the low temperature surface absorbs heat, which is then transferred to the high temperature surface by the semiconductor electric dipole particles.

現在、一部の美容器は半導体クーラーの低温面を皮膚に接触する端面(即ち、美容作業面)として使用したり、端面を冷却し、端面を皮膚に接触させたり、半導体クーラーによって提供される冷却した端面により、接触している皮膚にアイシング効果をもたらす。従来技術による美容器では、半導体クーラーはいずれも外付けのNTC(温度センサ)を被伝導部材に密着させることで温度を検出する必要があり、温度センサは温度データを受信してから制御回路基板に伝送することで被伝導部材の温度領域を制御する。一部の美容器具は正確に温度制御する必要があり、例えば、皮膚/コラーゲンの再生/肌のハリなどのために温度をある範囲に制御する必要があるが、NTC(温度センサ)を外付けする方式では被伝導部材の温度を検出するため、低温面/高温面/美容作業面の温度を正確に制御できない。そのため、この方式は製品の空間レイアウト及び組立にとって不利になり、空間が比較的大きく、組み立てにくいことなどに起因してコストが浪費されてしまい、密着又は押圧付着時にNTCが損傷されやすく、且つ組立の不安定性に起因して温度差が比較的大きい。 At present, some beauty devices use the low temperature surface of a semiconductor cooler as the end surface that contacts the skin (i.e., the beauty work surface), or cool the end surface and put the end surface into contact with the skin, and the cooled end surface provided by the semiconductor cooler provides an icing effect on the skin that is in contact. In beauty devices according to the prior art, all semiconductor coolers need to detect the temperature by attaching an external NTC (temperature sensor) to the conductive member, and the temperature sensor receives the temperature data and then transmits it to the control circuit board to control the temperature range of the conductive member. Some beauty devices need to accurately control the temperature, for example, to control the temperature within a certain range for skin/collagen regeneration/skin firmness, etc., but the method of attaching an external NTC (temperature sensor) detects the temperature of the conductive member, so the temperature of the low temperature surface/high temperature surface/beauty work surface cannot be accurately controlled. Therefore, this method is disadvantageous to the spatial layout and assembly of the product, and costs are wasted due to the relatively large space and difficulty in assembly, the NTC is easily damaged during adhesion or pressure attachment, and the temperature difference is relatively large due to the instability of assembly.

本願の目的は、従来の半導体クーラーを美容製品に使用する場合、外付けのNTCによって引き起こされる温度調整及び構造上の欠点を解決する半導体クーラーを提供することである。 The objective of this application is to provide a semiconductor cooler that overcomes the temperature regulation and structural shortcomings caused by external NTCs when using conventional semiconductor coolers in beauty products.

上記の技術的問題を解決するために、本願は、半導体電気双極子層と、その両端の低温面及び高温面とを備え、温度センサモジュールが内蔵された半導体クーラーを提供する。前記温度センサモジュールは、高温面又は低温面の温度を検出して温度データを主制御ユニットに伝送するために使用され、主制御ユニットは受信した温度データに基づいて半導体クーラーの給電を制御する。 To solve the above technical problems, the present application provides a semiconductor cooler that includes a semiconductor electric dipole layer, a low temperature surface and a high temperature surface at both ends thereof, and a built-in temperature sensor module. The temperature sensor module is used to detect the temperature of the high temperature surface or the low temperature surface and transmit the temperature data to a main control unit, and the main control unit controls the power supply of the semiconductor cooler based on the received temperature data.

いくつかの実施例では、前記温度センサモジュールは正負電極を含み、前記半導体クーラーは正負電極を含み、前記正負電極はHブリッジドライバにより主制御ユニット又は前記主制御ユニットが設けられた制御回路基板に接続され、前記温度センサモジュールは前記主制御ユニット又は前記主制御ユニットが設けられた制御回路基板に電気的に接続又は通信接続されることにより温度データを伝送する。 In some embodiments, the temperature sensor module includes positive and negative electrodes, the semiconductor cooler includes positive and negative electrodes, the positive and negative electrodes are connected to a main control unit or a control circuit board on which the main control unit is provided by an H-bridge driver, and the temperature sensor module transmits temperature data by being electrically connected or communicatively connected to the main control unit or the control circuit board on which the main control unit is provided.

いくつかの実施例では、前記温度センサモジュールは高温面又は低温面の内側面に密着して設けられる。 In some embodiments, the temperature sensor module is provided in intimate contact with the inner surface of the hot or cold surface.

いくつかの実施例では、前記低温面及び高温面の形状は互いに一致し、半導体電気双極子層のp型及びn型半導体粒子は低温面及び高温面の内側面に平らに置かれ、前記半導体クーラーは低温面全体が全面冷却を形成し、又は高温面全体が全面加熱を形成し、半導体電気双極子層と温度センサモジュールとは低温面と高温面との間に位置する。 In some embodiments, the shapes of the cold surface and the hot surface are consistent with each other, the p-type and n-type semiconductor particles of the semiconductor electric dipole layer are laid flat on the inner surfaces of the cold surface and the hot surface, the semiconductor cooler forms full-surface cooling over the entire cold surface or forms full-surface heating over the entire hot surface, and the semiconductor electric dipole layer and the temperature sensor module are located between the cold surface and the hot surface.

いくつかの実施例では、前記半導体クーラーの一方の側面に貫通孔が形成され、又は、前記半導体クーラーの低温面及び/又は高温面は透明基板であり、半導体電気双極子層のp型及びn型半導体電気双極子粒子が半導体クーラーの片側の内部に設けられ、半導体クーラーの他側の内部にはp型及びn型半導体電気双極子粒子が設けられずに空白領域が形成され、前記空白領域に対応して発光領域が形成され、即ち、低温面及び高温面は透明基板であって発光領域を形成し、又は、低温面又は高温面のうちの一方が透明基板であることに対応して他方が貫通孔を形成し、低温面と高温面とは互いに係合して発光領域を形成する。 In some embodiments, a through hole is formed on one side of the semiconductor cooler, or the low temperature surface and/or the high temperature surface of the semiconductor cooler is a transparent substrate, the p-type and n-type semiconductor electric dipole particles of the semiconductor electric dipole layer are provided inside one side of the semiconductor cooler, and the p-type and n-type semiconductor electric dipole particles are not provided inside the other side of the semiconductor cooler, forming a blank area, and a light-emitting area is formed corresponding to the blank area, i.e., the low temperature surface and the high temperature surface are transparent substrates and form a light-emitting area, or one of the low temperature surface or the high temperature surface is a transparent substrate and the other forms a through hole corresponding to the other, and the low temperature surface and the high temperature surface engage with each other to form a light-emitting area.

いくつかの実施例では、半導体電気双極子層のp型及びn型半導体電気双極子粒子は環状帯として配置され、中央の内部領域内にはp型及びn型半導体電気双極子粒子が設けられずに空白領域が形成され、前記半導体電気双極子層の中央内部領域に対応して、前記低温面及び/又は高温面が貫通孔として設けられ、又は、前記低温面及び/又は高温面のうちの一方が透明基板であることに対応して他方が貫通孔を形成し、低温面と高温面とは互いに係合して発光領域を形成する。 In some embodiments, the p-type and n-type semiconductor electric dipole particles of the semiconductor electric dipole layer are arranged as annular bands, and a blank area is formed in the central internal region without the p-type and n-type semiconductor electric dipole particles, and the cold surface and/or the hot surface are provided as through holes corresponding to the central internal region of the semiconductor electric dipole layer, or one of the cold surface and/or the hot surface forms a through hole corresponding to the other being a transparent substrate, and the cold surface and the hot surface engage with each other to form a light emitting region.

いくつかの実施例では、前記低温面及び高温面は熱伝導材料基板であり、前記熱伝導材料基板はセラミック材料基板、アルミニウム基板、銅基板又は透明結晶基板である。 In some embodiments, the cold surface and the hot surface are thermally conductive material substrates, and the thermally conductive material substrates are ceramic material substrates, aluminum substrates, copper substrates, or transparent crystal substrates.

本願は更に、ヘッド部の端面が作業面を形成し前記作業面が皮膚に接触して美容又は理学診療処理をする美容又は理学療法器具を提供し、前記美容又は理学療法器具の内部に上記の任意の実施例に記載の半導体クーラーが取り付けられ、前記半導体クーラーの低温面は前記作業面として使用され、又は、前記半導体クーラーの低温面が前記作業面の内側に貼着されることにより前記作業面を冷却し、又は、前記半導体クーラーの低温面と前記作業面とが冷却伝導部材により高速冷却伝導方式で接続されることにより前記作業面を冷却することを特徴とする。 The present application further provides a cosmetic or physical therapy device in which the end surface of the head portion forms a working surface, and the working surface comes into contact with the skin to perform cosmetic or physical therapy treatment, and the cosmetic or physical therapy device is characterized in that a semiconductor cooler described in any of the above embodiments is attached inside the cosmetic or physical therapy device, and the low temperature surface of the semiconductor cooler is used as the working surface, or the low temperature surface of the semiconductor cooler is attached to the inside of the working surface to cool the working surface, or the low temperature surface of the semiconductor cooler and the working surface are connected by a cooling conductive member in a high-speed cooling conduction manner to cool the working surface.

いくつかの実施例では、前記美容又は理学療法器具はハウジングと、ハウジング内に取り付けられた光源アセンブリ、電源アセンブリ、制御回路基板及び放熱アセンブリとを備え、半導体クーラーの正負電極及び内蔵された温度センサモジュールは前記制御回路基板に電気的に接続され、前記制御回路基板に主制御ユニットが設けられ、前記放熱アセンブリは半導体クーラーの高温面を放熱するために使用される。 In some embodiments, the cosmetic or physical therapy device includes a housing, a light source assembly, a power supply assembly, a control circuit board, and a heat dissipation assembly mounted within the housing, the positive and negative electrodes of the semiconductor cooler and the built-in temperature sensor module are electrically connected to the control circuit board, a main control unit is provided on the control circuit board, and the heat dissipation assembly is used to dissipate heat from a hot surface of the semiconductor cooler.

いくつかの実施例では、前記放熱アセンブリはファンを含み、前記ファンは熱伝導ケースを含み、前記半導体クーラーの高温面と前記熱伝導ケースとは熱伝導的に接続され、又は、前記熱伝導ケースは半導体クーラーの高温面として直接機能し、熱伝導ケースの外壁に熱端回路が設けられて半導体電気双極子層に溶接され、前記半導体クーラーの低温面と前記作業面とは冷却伝導部材により高速冷却伝導方式で接続される。 In some embodiments, the heat dissipation assembly includes a fan, the fan includes a thermally conductive case, the hot surface of the semiconductor cooler and the thermally conductive case are thermally conductively connected, or the thermally conductive case serves directly as the hot surface of the semiconductor cooler, a thermal terminal circuit is provided on the outer wall of the thermally conductive case and welded to the semiconductor electric dipole layer, and the cold surface of the semiconductor cooler and the working surface are connected in a fast cooling conduction manner by a cooling conductive member.

いくつかの実施例では、前記熱伝導ケースはヒートパイプ、超熱伝導パイプ、超熱伝導プレート又はVC温度均一化プレートのうちの1つ又は複数の組合せを含み、前記冷却伝導部材はヒートパイプ、VC温度均一化プレート、超熱伝導パイプ又は超熱伝導プレートである。 In some embodiments, the thermally conductive case includes one or more combinations of a heat pipe, a superconducting heat pipe, a superconducting heat plate, or a VC temperature uniformizing plate, and the cooling conductive member is a heat pipe, a VC temperature uniformizing plate, a superconducting heat pipe, or a superconducting heat plate.

本願の有益な効果は以下のとおりである。 The beneficial effects of this application are as follows:

本願の半導体クーラーでは、温度センサモジュールは半導体クーラーの内部に内蔵されて半導体クーラーの高温面又は低温面に密着し、低温面又は高温面の温度を検出するために用いられ、それにより中間温度伝導部材の誤差及び時間を削減し、クーラーの温度変化を即座に正確に監視測定することを実現する。温度センサモジュールは主制御ユニット又は制御回路基板に電気的に接続され、且つ主制御ユニット又は制御回路基板は受信した温度データによって半導体クーラーの給電を制御し、それにより温度を所期の温度範囲に常に保持させる。且つ、半導体クーラーの構造がより簡単でコンパクトになり、温度センサモジュールを損傷しにくい。 In the semiconductor cooler of the present application, the temperature sensor module is built into the semiconductor cooler and is in close contact with the hot or cold surface of the semiconductor cooler, and is used to detect the temperature of the cold or hot surface, thereby reducing the error and time of the intermediate temperature conduction member and realizing the instantaneous and accurate monitoring and measurement of the temperature change of the cooler. The temperature sensor module is electrically connected to the main control unit or control circuit board, and the main control unit or control circuit board controls the power supply of the semiconductor cooler according to the received temperature data, thereby always maintaining the temperature within the desired temperature range. In addition, the structure of the semiconductor cooler is simpler and more compact, and the temperature sensor module is less likely to be damaged.

図1は本願の第1実施例に係る半導体クーラーの分解模式図である。FIG. 1 is an exploded schematic view of a semiconductor cooler according to a first embodiment of the present invention. 図2は本願の第1実施例に係る半導体クーラーの側面図である。FIG. 2 is a side view of the semiconductor cooler according to the first embodiment of the present application. 図3は本願の第2実施例に係る半導体クーラーの分解模式図である。FIG. 3 is an exploded schematic view of a semiconductor cooler according to a second embodiment of the present invention. 図4は本願の第2実施例に係る半導体クーラーの側面図である。FIG. 4 is a side view of a semiconductor cooler according to a second embodiment of the present invention. 図5は本願の第3実施例に係る半導体クーラーの分解模式図である。FIG. 5 is an exploded schematic view of a semiconductor cooler according to a third embodiment of the present invention. 図6は本願の第3実施例に係る半導体クーラーの側面図である。FIG. 6 is a side view of a semiconductor cooler according to a third embodiment of the present invention. 図7は本願の実施例に係る半導体クーラーの制御回路図である。FIG. 7 is a control circuit diagram of a semiconductor cooler according to an embodiment of the present application. 図8は本願の半導体クーラーを用いる例示的な美容器の斜視図である。FIG. 8 is a perspective view of an exemplary beauty device using the semiconductor cooler of the present application. 図9は図8における美容器の分解図である。FIG. 9 is an exploded view of the cosmetic device in FIG. 図10は本願の半導体クーラーを用いる例示的な理学療法器具の斜視図である。FIG. 10 is a perspective view of an exemplary physical therapy device that uses the solid state cooler of the present application. 図11は図10における理学療法器具の断面図である。FIG. 11 is a cross-sectional view of the physiotherapy device in FIG. 図12は図10における理学療法器具の分解図である。FIG. 12 is an exploded view of the physiotherapy device in FIG. 図13は本願の一実施例に係る放熱アセンブリの分解図である。FIG. 13 is an exploded view of a heat dissipation assembly according to one embodiment of the present disclosure.

以下、図面を参照して、本願の例示的な実施形態をより詳しく説明する。図面に本願の例示的な実施形態を示すが、理解すべきことは、本願は様々な形式で実現することができ、ここに説明された実施形態に限定されるべきではないことである。むしろ、これらの実施形態を提供する目的は、本願をより完全に理解して、本願の範囲を当業者に完全に伝えることである。 The exemplary embodiments of the present application are described in more detail below with reference to the drawings. Although the drawings show exemplary embodiments of the present application, it should be understood that the present application may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, the purpose of providing these embodiments is to provide a more complete understanding of the present application and to fully convey the scope of the present application to those skilled in the art.

理解すべきことは、明細書で使用される用語は単に特定の例示的な実施形態を説明するためのものであり、限定することを意図したものではないことである。文脈上明らかに別段の指示がない限り、明細書で使用される単数形式の「一」、「1つ」及び「前記」は複数形も含むことを示してもよい。用語「含む」、「包含」、「含有」及び「有する」は包括的なものであり、且つこれにより記載された特徴、ステップ、操作、アセンブリ及び/又は部材の存在を示すが、1つ又は複数の他の特徴、ステップ、操作、アセンブリ、部材、及び/又はそれらの組合せが存在し、又はそれらが追加されることを排除しない。実行順序を明確に示していない限り、明細書に説明される方法のステップ、過程及び操作は必ずしも記述又は説明された特定の順序で実行する必要があると解釈されるべきではない。更に理解すべきことは、別の又は代替のステップを採用してもよいことである。 It should be understood that the terms used in the specification are merely for the purpose of describing certain exemplary embodiments and are not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms "a", "an" and "said" used in the specification may also include the plural. The terms "comprise", "include", "contain" and "have" are inclusive and indicate the presence of a described feature, step, operation, assembly and/or member, but do not exclude the presence or addition of one or more other features, steps, operations, assemblies, members and/or combinations thereof. Unless an order of execution is explicitly indicated, the steps, processes and operations of the method described in the specification should not be construed as necessarily having to be performed in the particular order described or illustrated. It should be further understood that alternative or alternative steps may be employed.

明細書において用語「第1」、「第2」、「第3」などで複数のアセンブリ、部材、領域、層及び/又は部分を説明してもよいが、これらのアセンブリ、部材、領域、層及び/又は部分はこれらの用語により限定されるべきではない。これらの用語は単に1つのアセンブリ、部材、領域、層又は部分を別の領域、層又は部分と区別するためのものであってもよい。上下の文脈において明確に示していない限り、「第1」、「第2」などの用語及び他の数字用語は、明細書で使用される場合、順序又は手順を示唆するものではない。従って、以下に検討するアセンブリ、部材、領域、層又は部分は例示的な実施形態の教示から逸脱することなく、第2アセンブリ、部材、領域、層又は部分と称されてもよい。 Although the specification may use the terms "first", "second", "third", etc. to describe multiple assemblies, members, regions, layers, and/or portions, these assemblies, members, regions, layers, and/or portions should not be limited by these terms. These terms may be merely intended to distinguish one assembly, member, region, layer, or portion from another region, layer, or portion. Unless otherwise clearly indicated by the context above and below, terms such as "first", "second", and other numerical terms, when used in the specification, do not imply a sequence or order. Thus, an assembly, member, region, layer, or portion discussed below may be referred to as a second assembly, member, region, layer, or portion without departing from the teachings of the exemplary embodiments.

説明を容易にするために、明細書で空間的相対関係の用語を用いて図示の1つのアセンブリ又は特徴の別のアセンブリ又は特徴に対する関係を説明してもよく、これらの相対関係の用語は、例えば、「内部」、「外部」、「内側」、「外側」、「下面」、「下方」、「上面」、「上方」、「前端」、「後側」などである。このような空間的相対関係の用語は、図示の方位以外の使用又は操作中の装置の異なる方位を含むように意図している。例えば、図示の装置が反転すれば、「他のアセンブリ又は特徴の下面にある」又は「他のアセンブリ又は特徴の下方にある」と説明されるアセンブリはその後で「他のアセンブリ又は特徴の上面にある」又は「他のアセンブリ又は特徴の上方にある」に方向づけられる。従って、例示的な用語「〇〇の下方にある」は「その上にある」及び「その下にある」の方位を含んでもよい。装置は別に方向づけられ(90度だけ回転し、又は他の方向にある)、且つ明細書で使用される空間的相対関係記述子で対応して解釈してもよい。 For ease of explanation, the specification may use spatial relative terms to describe the relationship of one illustrated assembly or feature to another assembly or feature, such as, for example, "inside," "outside," "inner," "outside," "lower," "upper," "upper," "front," "rear," and the like. Such spatial relative terms are intended to include different orientations of the device during use or operation other than the orientation shown. For example, if the illustrated device is flipped over, an assembly described as "under the other assembly or feature" or "under the other assembly or feature" would then be oriented as "on top of the other assembly or feature" or "above the other assembly or feature." Thus, the exemplary term "under" may include orientations of "on top of" and "under." The device may be otherwise oriented (rotated 90 degrees or in other directions) and correspondingly interpreted in the spatial relative descriptors used in the specification.

図1~7を参照すると、本願の実施例に係る半導体クーラー10は中間半導体電気双極子層12と、両端の高温面13及び低温面11とを備え、半導体クーラー10には温度センサモジュール15が内蔵されている。半導体電気双極子層12はp型及びn型の半導体粒子が熱的に互いに交互に平行に配置され、電気的に直列接続されて形成され、p&n型半導体粒子の両端に形成された高温面13及び低温面11は熱伝導材料基板であり、例えば、セラミック/アルミニウム/銅/透明結晶などの熱伝導材料であってもよい。温度センサモジュール15はNTCセンサであってもよい。本願の実施例では、温度センサ15が半導体クーラー10の内部に内蔵されている。いくつかの実施例では、温度センサ15は中間半導体電気双極子層12に位置し、クーラー10の一方の高温面13/低温面11に密着し、クーラーの低温面11/高温面13の温度を直接検出する。 Referring to Figs. 1 to 7, the semiconductor cooler 10 according to the embodiment of the present application includes an intermediate semiconductor electric dipole layer 12 and a hot surface 13 and a cold surface 11 at both ends, and the semiconductor cooler 10 is equipped with a temperature sensor module 15. The semiconductor electric dipole layer 12 is formed by thermally arranging p-type and n-type semiconductor particles in parallel with each other alternately and electrically connected in series, and the hot surface 13 and the cold surface 11 formed at both ends of the p&n-type semiconductor particles are thermally conductive material substrates, which may be thermally conductive materials such as ceramic/aluminum/copper/transparent crystal. The temperature sensor module 15 may be an NTC sensor. In the embodiment of the present application, the temperature sensor 15 is equipped inside the semiconductor cooler 10. In some embodiments, the temperature sensor 15 is located in the intermediate semiconductor electric dipole layer 12 and is in close contact with one of the hot surface 13/cold surface 11 of the cooler 10 to directly detect the temperature of the cold surface 11/hot surface 13 of the cooler.

図1~2を参照すると、第1実施例の半導体クーラー10は中間半導体電気双極子層12と、その両端の高温面13及び低温面11とを備え、半導体クーラー1には温度センサモジュール15が内蔵されている。本実施例では、半導体クーラー10の低温面11全体が全面冷却を形成し、又は高温面13全体が全面加熱を形成し、半導体電気双極子粒子が低温面11及び高温面13の内側表面に平らに又はほぼ平らに置かれ、低温面11と高温面13の形状は一致し、半導体電気双極子層12と温度センサモジュール15とは低温面と高温面との間に位置する。温度センサモジュール15は高温面13に密着し、又は低温面11に密着する。温度センサモジュール15の正負電極150及び半導体電気双極子層12の正負電極120は半導体クーラー10の外に延出して制御回路基板又は主制御ユニットに電気的に接続される。 Referring to Figures 1-2, the semiconductor cooler 10 of the first embodiment includes an intermediate semiconductor electric dipole layer 12 and a high-temperature surface 13 and a low-temperature surface 11 at both ends thereof, and the semiconductor cooler 1 is equipped with a temperature sensor module 15. In this embodiment, the entire low-temperature surface 11 of the semiconductor cooler 10 forms a full-surface cooling, or the entire high-temperature surface 13 forms a full-surface heating, the semiconductor electric dipole particles are placed flat or nearly flat on the inner surfaces of the low-temperature surface 11 and the high-temperature surface 13, the shapes of the low-temperature surface 11 and the high-temperature surface 13 are consistent, and the semiconductor electric dipole layer 12 and the temperature sensor module 15 are located between the low-temperature surface and the high-temperature surface. The temperature sensor module 15 is in close contact with the high-temperature surface 13 or in close contact with the low-temperature surface 11. The positive and negative electrodes 150 of the temperature sensor module 15 and the positive and negative electrodes 120 of the semiconductor electric dipole layer 12 extend out of the semiconductor cooler 10 and are electrically connected to a control circuit board or a main control unit.

図3~4を参照すると、第2実施例の半導体クーラー10は中間半導体電気双極子層12と、両端の高温面13及び低温面11とを備え、半導体クーラー1には温度センサモジュール15が内蔵されている。本実施例では、半導体クーラー10の片側に貫通孔16が用意されており、貫通孔16は発光領域16として使用してもよく、例えば、半導体クーラーが光子美容又は理学療法器具に応用される場合に発光領域として使用できる。貫通孔16は低温面11又は高温面13の基板を延長して形成してもよく、低温面11及び高温面13の2つの基板が延長する側面に対応する貫通孔16を形成してもよい。半導体クーラー10の内部の半導体電気双極子層12が設けられる側に対応する低温面は冷却面として使用され、又は片側の高温面13は加熱面として使用される。低温面11と高温面13の形状は一致し、半導体電気双極子層12と温度センサモジュール15とは低温面と高温面との間に位置する。図では一例として、温度センサモジュール15は高温面13に密着しているが、当然のことながら、低温面11に密着してもよい。温度センサモジュール15の正負電極150及び半導体電気双極子層12の正負電極120は半導体クーラー10の外に延出して制御回路基板又は主制御ユニットに電気的に接続される。 3-4, the semiconductor cooler 10 of the second embodiment includes an intermediate semiconductor electric dipole layer 12 and a high-temperature surface 13 and a low-temperature surface 11 at both ends, and the semiconductor cooler 1 is equipped with a temperature sensor module 15. In this embodiment, a through hole 16 is provided on one side of the semiconductor cooler 10, and the through hole 16 can be used as a light-emitting area 16, for example, when the semiconductor cooler is applied to a photonic beauty or physical therapy device. The through hole 16 can be formed by extending the substrate of the low-temperature surface 11 or the high-temperature surface 13, and the through hole 16 can be formed corresponding to the side where the two substrates of the low-temperature surface 11 and the high-temperature surface 13 extend. The low-temperature surface corresponding to the side where the semiconductor electric dipole layer 12 is provided inside the semiconductor cooler 10 is used as a cooling surface, or the high-temperature surface 13 on one side is used as a heating surface. The shapes of the low-temperature surface 11 and the high-temperature surface 13 are the same, and the semiconductor electric dipole layer 12 and the temperature sensor module 15 are located between the low-temperature surface and the high-temperature surface. In the figure, as an example, the temperature sensor module 15 is in close contact with the high-temperature surface 13, but it may of course be in close contact with the low-temperature surface 11. The positive and negative electrodes 150 of the temperature sensor module 15 and the positive and negative electrodes 120 of the semiconductor electric dipole layer 12 extend outside the semiconductor cooler 10 and are electrically connected to a control circuit board or a main control unit.

図5~6を参照すると、実施例3の半導体クーラー10は中間半導体電気双極子層12と、両端の高温面13及び低温面11とを備え、半導体クーラー10には温度センサモジュール15が内蔵されている。本実施例では、半導体クーラー10の内部の半導体電気双極子層12のp&n型半導体電気双極子粒子が環状帯として配置され、中間内部領域内にp&n型半導体電気双極子粒子が設けられずに空白領域が形成される。低温面11/高温面13は環状領域を含み、半導体電気双極子層12に対応する。低温面11/高温面13の中間領域は貫通孔であり、又は、低温面基板/高温面基板のうちの一方に貫通孔が対応して形成され、他方の基板は透明基板(例えば、透明結晶)であり、さらに又は、図6に示すように、低温面基板/高温面基板はいずれも透明基板(例えば、透明結晶)である。従って、半導体クーラー10に環状領域の高温面、低温面及び中間半導体電気双極子層が形成されるが、空白領域は貫通孔、貫通孔/透明基板又は透明基板領域であって、発光領域16として使用してもよく、例えば、半導体クーラー10は光子美容又は理学療法器具に応用される場合に発光領域として使用できる。半導体クーラー10の環状の半導体電気双極子層12の片側に対応する低温面が全面冷却を形成し、又は片側の高温面13が全面加熱を形成してもよい。低温面11と高温面13の形状は一致し、半導体電気双極子層12と温度センサモジュール15とは低温面と高温面との間に位置する。図では一例として、温度センサモジュール15は高温面13に密着しているが、当然のことながら、低温面11に密着してもよい。温度センサモジュール15の正負電極150及び半導体電気双極子層12の正負電極120は半導体クーラー10の外に延出して制御回路基板又は主制御ユニットに電気的に接続される。 Referring to Figures 5-6, the semiconductor cooler 10 of the third embodiment includes an intermediate semiconductor electric dipole layer 12 and high-temperature and low-temperature surfaces 13 and 11 at both ends, and the semiconductor cooler 10 is equipped with a temperature sensor module 15. In this embodiment, the p&n type semiconductor electric dipole particles of the semiconductor electric dipole layer 12 inside the semiconductor cooler 10 are arranged as an annular band, and no p&n type semiconductor electric dipole particles are provided in the intermediate internal region, forming a blank region. The low-temperature surface 11/high-temperature surface 13 includes an annular region and corresponds to the semiconductor electric dipole layer 12. The intermediate region of the low-temperature surface 11/high-temperature surface 13 is a through hole, or a through hole is formed correspondingly in one of the low-temperature surface substrate/high-temperature surface substrate, and the other substrate is a transparent substrate (e.g., transparent crystal), or, as shown in Figure 6, the low-temperature surface substrate/high-temperature surface substrate are both transparent substrates (e.g., transparent crystal). Therefore, the semiconductor cooler 10 has a high temperature surface, a low temperature surface and an intermediate semiconductor electric dipole layer in an annular region, and the blank region is a through hole, a through hole/transparent substrate or a transparent substrate region, which may be used as a light emitting region 16, for example, when the semiconductor cooler 10 is applied to a photonic beauty or physical therapy device, it may be used as a light emitting region. The low temperature surface corresponding to one side of the annular semiconductor electric dipole layer 12 of the semiconductor cooler 10 may form a full cooling, or the high temperature surface 13 on one side may form a full heating. The shapes of the low temperature surface 11 and the high temperature surface 13 are the same, and the semiconductor electric dipole layer 12 and the temperature sensor module 15 are located between the low temperature surface and the high temperature surface. In the figure, as an example, the temperature sensor module 15 is in close contact with the high temperature surface 13, but it may naturally be in close contact with the low temperature surface 11. The positive and negative electrodes 150 of the temperature sensor module 15 and the positive and negative electrodes 120 of the semiconductor electric dipole layer 12 extend outside the semiconductor cooler 10 and are electrically connected to a control circuit board or a main control unit.

半導体クーラー10の正負電極120及び温度センサモジュール15の正負電極150が制御回路基板又は主制御ユニットに電気的に接続されることにより給電し、制御回路基板に主制御ユニットが設けられ、温度センサモジュール15が制御回路基板又は主制御ユニットに電気的に接続又は通信接続されることにより温度データを伝送する。図6を参照すると、本願の半導体クーラー10の動作原理は以下の通りである。温度センサモジュール15が内蔵された半導体クーラー10は、その温度センサモジュール15が低温面11又は高温面13の温度データを検出して、温度データを制御回路基板上の主制御ユニットに伝送し、主制御ユニットが温度データの分析及び予定温度範囲の要件に応じて半導体クーラーの制御信号を制御出力することにより半導体クーラー10の給電動作を制御し、半導体クーラーが順方向に給電すれば冷却し、逆方向に給電すれば加熱する特性を利用して、Hブリッジドライバにより半導体クーラー10へ順方向又は逆方向に給電して、半導体クーラー10の動作状態を調整し、温度を所期の温度範囲で正確かつ一定することを実現する。独立した制御回路基板を設けることにより半導体クーラー10の動作を制御してもよく、独立した制御回路基板が半導体クーラー10を応用した電気製品の内部のPCBAに電気的に接続され、又は、前記主制御ユニットが半導体クーラー10を応用した電気製品の内部のPCBAに統合される。 The positive and negative electrodes 120 of the semiconductor cooler 10 and the positive and negative electrodes 150 of the temperature sensor module 15 are electrically connected to a control circuit board or a main control unit to supply power, and the control circuit board is provided with a main control unit, and the temperature sensor module 15 is electrically connected or communicatively connected to the control circuit board or the main control unit to transmit temperature data. Referring to FIG. 6, the operating principle of the semiconductor cooler 10 of the present application is as follows. The semiconductor cooler 10 with the built-in temperature sensor module 15 detects the temperature data of the low temperature surface 11 or the high temperature surface 13 through the temperature sensor module 15, transmits the temperature data to the main control unit on the control circuit board, and the main control unit controls the power supply operation of the semiconductor cooler 10 by controlling and outputting a control signal for the semiconductor cooler according to the analysis of the temperature data and the requirements of the expected temperature range. Taking advantage of the characteristics of the semiconductor cooler, which cools when power is supplied in the forward direction and heats when power is supplied in the reverse direction, the semiconductor cooler 10 is supplied with power in the forward or reverse direction by the H-bridge driver to adjust the operating state of the semiconductor cooler 10, thereby realizing an accurate and constant temperature within the expected temperature range. The operation of the semiconductor cooler 10 may be controlled by providing an independent control circuit board, which is electrically connected to a PCBA inside the electrical product to which the semiconductor cooler 10 is applied, or the main control unit is integrated into a PCBA inside the electrical product to which the semiconductor cooler 10 is applied.

温度センサモジュール15の数は、半導体クーラーの面積及び形状によって1つ以上設けられてもよい。 The number of temperature sensor modules 15 may be one or more depending on the area and shape of the semiconductor cooler.

上記の実施例の半導体電気双極子層12及び温度センサモジュール15は、低温面と高温面との間に位置し、温度センサモジュール15は高温面13の内側面に密着し、又は低温面11の内側面に密着し、それにより低温面又は高温面の温度をより正確に制御することができ、他の実施例では、温度センサモジュール15は、半導体クーラーの低温面又は高温面の外側表面に設けられて低温面又は高温面の外側表面に密着してもよく、同様に低温面又は高温面の温度を正確に制御できる。 In the above embodiment, the semiconductor electric dipole layer 12 and the temperature sensor module 15 are located between the low temperature surface and the high temperature surface, and the temperature sensor module 15 is in close contact with the inner surface of the high temperature surface 13 or in close contact with the inner surface of the low temperature surface 11, thereby allowing the temperature of the low temperature surface or the high temperature surface to be more accurately controlled; in other embodiments, the temperature sensor module 15 may be provided on the outer surface of the low temperature surface or the high temperature surface of the semiconductor cooler and in close contact with the outer surface of the low temperature surface or the high temperature surface, allowing the temperature of the low temperature surface or the high temperature surface to be accurately controlled in the same manner.

本願の半導体クーラー10は、電気製品の内部の冷却又は加熱に使用されてもよい。例示的に、半導体クーラー10は、冷却又は加熱機能を有する美容器具及び理学療法製品、例えば、光子美容器具、高周波器具、理学療法マッサージ器具などの人体に接触する製品に応用される。 The semiconductor cooler 10 of the present application may be used for cooling or heating the inside of an electrical appliance. For example, the semiconductor cooler 10 is applied to beauty appliances and physiotherapy products having a cooling or heating function, such as photonic beauty appliances, high-frequency appliances, and physiotherapy massage appliances that come into contact with the human body.

例えば、図8~9を参照すると、光子美容器100は上記の実施例の半導体クーラー10の低温面11を皮膚に接触する端面として、又は端面を冷却するために利用し、半導体クーラー10は美容器のヘッド側の端面の後方又は低温面に取り付けられてそのまま端面とされ、端面を皮膚に接触させ、半導体クーラーにおける冷却を提供する美容端面により接触する皮膚にアイシング効果を提供する。具体的な例では、光子美容器100はハウジング6と、ハウジング6内の放熱アセンブリ2、光源アセンブリ3、電源アセンブリ4及び制御回路基板5などを備える。制御回路基板5が光源アセンブリ3及び電源アセンブリ4に電気的に接続されることにより、光源アセンブリが光子を発生させるように制御する。電源アセンブリ4は光源アセンブリ3に給電するために用いられる。光子美容器100のヘッド部には、皮膚に接触する美容端面(作業面)とされ、又は美容端面(作業面)を冷却してアイシング効果を提供するための半導体クーラー10が取り付けられる。制御回路基板5は電源アセンブリ4が光源アセンブリ3を起動して光子を発生させるように制御し、光子は美容端面(作業面)を通って接触する皮膚を処理する。ハウジング6には吸気口及び排気口として使用される換気口60が設けられる。放熱アセンブリ2は主に半導体クーラー10の放熱に使用され、例示的に、放熱アセンブリ2はヒートパイプ21と、ヒートパイプに接続される放熱器23と、ファン25とを含む。ヒートパイプ21がクーラー10の高温面13に接続されることにより、クーラー10に発生した熱を放熱器23に伝導して放熱する。周囲の空気は換気口(吸気口)60からハウジング6の放熱器23の表面に入って熱を持ち去り、ファン25の動力により熱風を換気口(排気口)60からハウジングの外に排出させる。光源アセンブリ3によって発生した光子は半導体クーラー10に伝達されて、クーラー10の貫通孔又は透明基板に形成された発光領域16から射出されて、接触する皮膚に対して美容処理をする。本実施例では、半導体クーラー10が発光領域16を有する場合、半導体クーラー10の低温面をそのまま美容端面とし、又は美容端面の裏面に密着して、端面を冷却してもよい。半導体クーラー10が発光領域16を有しない場合、半導体クーラー10を美容端面の裏面に直接密着し、又は冷却伝導部材により美容端面に接続して、美容端面を冷却してもよい。 8-9, for example, the photonic beauty device 100 uses the low-temperature surface 11 of the semiconductor cooler 10 of the above embodiment as an end surface that contacts the skin or for cooling the end surface, and the semiconductor cooler 10 is attached to the rear of the end surface on the head side of the beauty device or to the low-temperature surface as it is, and the end surface is brought into contact with the skin, and the cosmetic end surface that provides cooling in the semiconductor cooler provides an icing effect to the contacting skin. In a specific example, the photonic beauty device 100 includes a housing 6, a heat dissipation assembly 2, a light source assembly 3, a power supply assembly 4, and a control circuit board 5 in the housing 6. The control circuit board 5 is electrically connected to the light source assembly 3 and the power supply assembly 4 to control the light source assembly to generate photons. The power supply assembly 4 is used to supply power to the light source assembly 3. The semiconductor cooler 10 is attached to the head of the photonic beauty device 100 as a cosmetic end surface (work surface) that contacts the skin or for cooling the cosmetic end surface (work surface) to provide an icing effect. The control circuit board 5 controls the power supply assembly 4 to activate the light source assembly 3 to generate photons, and the photons pass through the cosmetic end surface (work surface) to treat the skin that comes into contact with it. The housing 6 is provided with a ventilation port 60 used as an air inlet and an exhaust port. The heat dissipation assembly 2 is mainly used to dissipate heat from the semiconductor cooler 10, and illustratively includes a heat pipe 21, a heat sink 23 connected to the heat pipe, and a fan 25. The heat pipe 21 is connected to the high temperature surface 13 of the cooler 10, so that the heat generated in the cooler 10 is conducted to the heat sink 23 to dissipate the heat. The surrounding air enters the surface of the heat sink 23 of the housing 6 from the ventilation port (air inlet) 60 to carry away heat, and the hot air is exhausted from the ventilation port (exhaust port) 60 to the outside of the housing by the power of the fan 25. The photons generated by the light source assembly 3 are transmitted to the semiconductor cooler 10 and emitted from the through-hole of the cooler 10 or the light-emitting area 16 formed on the transparent substrate to perform cosmetic treatment on the skin that comes into contact with it. In this embodiment, if the semiconductor cooler 10 has a light-emitting region 16, the low-temperature surface of the semiconductor cooler 10 may be used as the cosmetic end surface, or may be attached to the back surface of the cosmetic end surface to cool the end surface. If the semiconductor cooler 10 does not have a light-emitting region 16, the semiconductor cooler 10 may be attached directly to the back surface of the cosmetic end surface, or may be connected to the cosmetic end surface by a cooling conductive member to cool the cosmetic end surface.

半導体クーラー10の正負電極120及び温度センサモジュール15の正負電極150は制御回路基板5に接続され、内蔵された温度センサモジュール15により半導体クーラーの低温面又は高温面の温度を検出し、温度センサモジュール15が制御回路基板5に電気的に接続されることにより温度データをフィードバックし、制御回路基板5が温度データの分析及び予定温度範囲の要件に応じて半導体クーラーの正負電極120の給電動作を制御し、それにより低温面11又は美容端面の温度を予定温度範囲に常に保持させる。 The positive and negative electrodes 120 of the semiconductor cooler 10 and the positive and negative electrodes 150 of the temperature sensor module 15 are connected to the control circuit board 5, and the temperature of the low or high surface of the semiconductor cooler is detected by the built-in temperature sensor module 15, which is electrically connected to the control circuit board 5 to feed back the temperature data. The control circuit board 5 controls the power supply operation of the positive and negative electrodes 120 of the semiconductor cooler according to the analysis of the temperature data and the requirements of the expected temperature range, thereby constantly maintaining the temperature of the low surface 11 or cosmetic end surface within the expected temperature range.

例えば、図10~12を参照すると、光子理学療法器具は半導体クーラー10により冷却される。具体的な例では、光子高周波美容器100を例とすると、高周波モジュール、光源アセンブリ3、放熱アセンブリ2、制御モジュール及び電源アセンブリ4を備え、これらのモジュールはハウジング6内に設けられる。光子美容器は高周波治療と光子治療とを一体にし、高周波モジュールにより高周波電流を発生させて皮膚に対して高周波治療をするとともに、光源アセンブリによって発生した光子により皮膚に対して光子支援治療を実施し、高周波は皮膚の真皮層を加熱するが、光子の中の赤色光波長域(600nm以上)の透過性を利用して皮膚深部を同時に加熱し、現在治療すべき皮膚領域を迅速に加熱する。治療速度を効果的に向上させる。同時に、光子の中の黄色光、緑色光波長域(480~600nm)は透過性が赤色光よりも低いため、表皮層に吸収されて表皮層の皮膚色素沈着層、斑点、赤みを治療・改善する効果が得られる。これにより、皮膚のシワ除去、引き締め、トーンアップ、美白、ハリの効果が得られる。 For example, referring to Figs. 10-12, the photon physical therapy instrument is cooled by a semiconductor cooler 10. As a specific example, the photon high frequency beauty device 100 is provided with a high frequency module, a light source assembly 3, a heat dissipation assembly 2, a control module and a power supply assembly 4, and these modules are arranged in a housing 6. The photon beauty device integrates high frequency treatment and photon treatment, and performs high frequency treatment on the skin by generating high frequency current by the high frequency module, and performs photon assisted treatment on the skin by photons generated by the light source assembly. The high frequency heats the dermis layer of the skin, but uses the permeability of the red light wavelength range (600 nm or more) in the photons to heat the deep part of the skin at the same time, and quickly heats the skin area to be currently treated. Effectively improves the treatment speed. At the same time, the yellow light and green light wavelength range (480-600 nm) in the photons have lower permeability than red light, so they are absorbed by the epidermis layer to treat and improve the skin pigmentation layer, spots and redness in the epidermis layer. This results in wrinkle removal, tightening, toning, whitening and firming of the skin.

ハウジング6には光子高周波美容器100の内部の空気流路の吸気口及び排気口としての複数の換気口60が設けられ、換気口(吸気口)から冷風が入って、空気流路を介して美容器の内部の熱(例えば、回路基板、光源ランプ、クーラーの高温端又は他の発熱素子に発生した熱を含む)を持ち去り、最後にハウジング上の換気口(排気口)からハウジングの外に排出される。高周波美容器100のヘッド部は球状(球状に限らない)であって発光口が設けられ、発光口内には発光通路の前端、即ち、発光口に覆設される発光パネル70が設けられる。発光パネル70は透明材料、例えば、透過結晶、例えば、サファイアなどであってもよく、又は、発光パネル70は発光用貫通孔が限定された非透明材料、例えば、金属材料、例えば、アルミニウム又は銅などの熱伝導材料である。発光パネル70の外壁面は作業面又は端面として機能し、皮膚に接触可能であり、高周波電極7は作業面70に設けられ、高周波電極71の導電性ピラーにより高周波美容器の内部の制御回路基板5に電気的に接続される。光源アセンブリ3はヘッド部内に設けられ、更に光学フィルタを配置することにより必要な波長の光子を得ることができる。光源アセンブリ3は光源ランプを含み、IPL蛍光灯であってもよく、ハロゲンランプ、又は美容或いは理学診療機能に適用される他の光源であってもよい。制御モジュールは制御回路基板5を含み、光子高周波美容器100の動作を制御するために用いられる。光源アセンブリ3は制御回路基板5に電気的に接続される。制御回路基板5には制御モジュールが統合されるだけでなく、DC電源モジュール、点滅制御モジュールなどの関連機能モジュールが更に設けられる。これらの機能モジュールは従来技術であり、市場で購入可能である。高周波モジュールは複数対の高周波電極71及び高周波回路基板72を含み、高周波回路基板72が制御回路基板5に統合され、又は独立して設けられてもよい。高周波回路基板72内に制御モジュール、DC電源モジュール、高周波駆動モジュールなどの機能モジュールが設けられる。これらの機能モジュールは従来技術であり、市場で購入可能である。高周波回路基板72が独立して設けられる場合、高周波回路基板72は制御回路基板5に電気的に接続され、高周波回路基板72のDC電源モジュールは制御回路基板上の電源モジュールにより分岐給電される。複数対の高周波電極71は高周波回路基板72に電気的に接続され、各対の電極は正負電極を含む。電極はストリップ状、柱状又は任意の適切な形状であり、作業面70に設けられ、高周波電極点を形成し、皮膚に接触し、高周波電極点及び発光口は重複して設けられ、又は発光口の周囲に設けられてもよく、1対以上設けられる。複数対の高周波電極71は内部の高周波回路基板72に電気的に接続される。高周波回路基板72はDC電源モジュールを制御することにより対応段階に必要な電圧を高周波駆動モジュールに供給し、高周波駆動モジュールは昇圧トランスによりDC電源電圧を高電圧正弦波に変換して出力制御モジュールに送り、出力制御モジュールは高周波電極71により高周波電流を使用者の肌に伝達して、皮膚に対して高周波治療をする。 The housing 6 is provided with a plurality of ventilation openings 60 as intake and exhaust openings of the air flow path inside the photon high frequency beauty device 100, and cool air enters through the ventilation openings (intake openings) and carries away heat inside the beauty device (including heat generated in, for example, the circuit board, the light source lamp, the hot end of the cooler, or other heat generating elements) through the air flow path, and finally is discharged to the outside of the housing through the ventilation opening (exhaust opening) on the housing. The head part of the high frequency beauty device 100 is spherical (not limited to spherical) and has a light emitting port, and the light emitting panel 70 is provided inside the light emitting port at the front end of the light emitting passage, i.e., covering the light emitting port. The light emitting panel 70 may be a transparent material, such as a transparent crystal, such as sapphire, or the light emitting panel 70 may be a non-transparent material with limited light emitting through holes, such as a metal material, such as aluminum or copper, or other heat conductive material. The outer wall surface of the light-emitting panel 70 serves as a working surface or end surface and can be in contact with the skin, and the high-frequency electrode 7 is provided on the working surface 70, and is electrically connected to the control circuit board 5 inside the high-frequency cosmetic device by the conductive pillar of the high-frequency electrode 71. The light source assembly 3 is provided in the head part, and an optical filter can be further arranged to obtain photons of the required wavelength. The light source assembly 3 includes a light source lamp, which may be an IPL fluorescent lamp, a halogen lamp, or other light source applied to beauty or physical medical functions. The control module includes a control circuit board 5 and is used to control the operation of the photon high-frequency cosmetic device 100. The light source assembly 3 is electrically connected to the control circuit board 5. The control circuit board 5 not only integrates the control module, but also further includes related functional modules such as a DC power supply module, a flashing control module, etc. These functional modules are conventional technologies and can be purchased on the market. The high-frequency module includes multiple pairs of high-frequency electrodes 71 and a high-frequency circuit board 72, and the high-frequency circuit board 72 may be integrated into the control circuit board 5 or provided independently. Functional modules such as a control module, a DC power supply module, and a high-frequency driving module are provided in the high-frequency circuit board 72. These functional modules are conventional technologies and can be purchased on the market. When the high frequency circuit board 72 is provided independently, the high frequency circuit board 72 is electrically connected to the control circuit board 5, and the DC power supply module of the high frequency circuit board 72 is branched and fed by the power supply module on the control circuit board. The multiple pairs of high frequency electrodes 71 are electrically connected to the high frequency circuit board 72, and each pair of electrodes includes a positive and negative electrode. The electrodes are strip-shaped, column-shaped or any suitable shape, provided on the working surface 70, form high frequency electrode points, and contact the skin, and the high frequency electrode points and the light emitting port may be provided overlapping or around the light emitting port, and one or more pairs are provided. The multiple pairs of high frequency electrodes 71 are electrically connected to the internal high frequency circuit board 72. The high frequency circuit board 72 controls the DC power supply module to supply the voltage required for the corresponding stage to the high frequency driving module, and the high frequency driving module converts the DC power supply voltage into a high voltage sine wave by a step-up transformer and sends it to the output control module, and the output control module transmits the high frequency current to the user's skin through the high frequency electrode 71 to perform high frequency treatment on the skin.

電源アセンブリ4はプラグインインターフェースを含んでもよく、プラグインインターフェースは制御回路基板に電気的に接続され、且つ外部電源に接続されることにより電源を供給し、電源アセンブリはエネルギー貯蔵コンデンサ又は電池を更に含み、エネルギー貯蔵コンデンサ又は電池が制御回路基板5及び光源アセンブリ3に電気的に接続される。 The power supply assembly 4 may include a plug-in interface that is electrically connected to the control circuit board and to an external power source to provide power, and the power supply assembly may further include an energy storage capacitor or battery that is electrically connected to the control circuit board 5 and the light source assembly 3.

図13を参照すると、放熱アセンブリ2はファン25を含み、作業面70を冷却するための半導体クーラー10を更に含む。半導体クーラー10は上記の第1実施例の構造を用いてもよく、半導体電気双極子層12と温度センサモジュール15とは両端の高温面13と低温面11との間に位置し、温度センサモジュール15は高温面13又は低温面11の内側に密着してもよく、半導体クーラーの正負電極120及び温度センサモジュール15の正負電極150は制御回路基板5に電気的に接続され、温度センサモジュール15は制御回路基板5に電気的に接続又は通信接続され、ファン25が制御回路基板5に電気的に接続される。半導体クーラー10の高温面13とヒートパイプ、超熱伝導パイプ、超熱伝導プレート又はVCからなる熱伝導ケース251とが急速熱伝導により接続される。半導体クーラー10の高温面13とヒートパイプ、超熱伝導パイプ、超熱伝導プレート又はVCからなる熱伝導ケース251とが互いに密着して接触して熱伝達し、又は熱伝導板により互いに密着して接触して熱伝達し、又は、半導体クーラー10の高温面13とヒートパイプ、超熱伝導パイプ、超熱伝導プレート又はVCからなる熱伝導ケース251とはそれぞれファンカバーの異なる部位に設けられ、互いに迅速に熱伝導し、又は、半導体クーラー10とヒートパイプ、超熱伝導パイプ、超熱伝導プレート又はVCからなる熱伝導ケース251とは一体構造であり、ヒートパイプ、超熱伝導パイプ、超熱伝導プレート又はVCからなる熱伝導ケース251に熱端回路を設けることにより、半導体電気双極子層12に溶接及び電気的に接続して、高温面13として直接機能する。 13, the heat dissipation assembly 2 includes a fan 25 and further includes a semiconductor cooler 10 for cooling the working surface 70. The semiconductor cooler 10 may use the structure of the first embodiment described above, the semiconductor electric dipole layer 12 and the temperature sensor module 15 are located between the high temperature surface 13 and the low temperature surface 11 at both ends, the temperature sensor module 15 may be in close contact with the inside of the high temperature surface 13 or the low temperature surface 11, the positive and negative electrodes 120 of the semiconductor cooler and the positive and negative electrodes 150 of the temperature sensor module 15 are electrically connected to the control circuit board 5, the temperature sensor module 15 is electrically connected or communicatively connected to the control circuit board 5, and the fan 25 is electrically connected to the control circuit board 5. The high temperature surface 13 of the semiconductor cooler 10 and the heat conduction case 251 made of a heat pipe, a superheat conducting pipe, a superheat conducting plate or VC are connected by rapid heat conduction. The high-temperature surface 13 of the semiconductor cooler 10 and the heat conduction case 251 made of a heat pipe, a superconducting heat pipe, a superconducting heat plate, or VC are in close contact with each other to transfer heat, or are in close contact with each other through a heat conduction plate to transfer heat, or the high-temperature surface 13 of the semiconductor cooler 10 and the heat conduction case 251 made of a heat pipe, a superconducting heat pipe, a superconducting heat plate, or VC are provided at different positions on the fan cover, and rapidly conduct heat to each other, or the semiconductor cooler 10 and the heat conduction case 251 made of a heat pipe, a superconducting heat pipe, a superconducting heat plate, or VC are integral in structure, and by providing a thermal end circuit in the heat conduction case 251 made of a heat pipe, a superconducting heat pipe, a superconducting heat plate, or VC, it is welded and electrically connected to the semiconductor electric dipole layer 12 and functions directly as the high-temperature surface 13.

半導体クーラー10の低温面11は光子高周波美容器100の発光パネル70に接触し、例えば、発光パネル70の周囲に設けられる。又は、半導体クーラー10の低温面11及び発光パネル70は冷却伝導部材(熱伝達素子又は熱伝導部材)73により発光パネル70に接続される。冷却伝導部材73は熱伝達構造部材であり、発光パネル70の熱を半導体クーラーに迅速に伝達することができ、作業面70を冷却する効果を実現し、それにより作業面に接触する皮膚の表面に冷湿布又は予冷効果を形成する。 The cold surface 11 of the semiconductor cooler 10 contacts the light-emitting panel 70 of the photon high frequency beauty device 100, for example, is provided around the light-emitting panel 70. Alternatively, the cold surface 11 of the semiconductor cooler 10 and the light-emitting panel 70 are connected to the light-emitting panel 70 by a cooling conductive member (heat transfer element or heat transfer member) 73. The cooling conductive member 73 is a heat transfer structural member that can rapidly transfer the heat of the light-emitting panel 70 to the semiconductor cooler, thereby realizing the effect of cooling the working surface 70, and thereby forming a cold compress or pre-cooling effect on the surface of the skin in contact with the working surface.

冷却伝導部材73の一端と半導体クーラーの低温面11とは高速熱伝達方式で接続され、他端は発光パネル70と高速冷却伝導方式で接続される。冷却伝導部材73がヒートパイプ、VC温度均一化プレート、超熱伝導パイプ又は超熱伝導プレートである。好ましくは、超熱伝導パイプはアルミニウム製超伝導管であり、超熱伝導プレートはアルミニウム製超伝導板である。発光パネル70の形状及び所期の冷却効果に基づいて、冷却伝導部材73の発光パネル70に接触する一端を環状に設計したり、又は環状の冷却伝導部材を設けたりしてもよく、これにより、発光パネル70の周囲に緊密に接触することで作業面70又は作業面70の周囲環境の熱を迅速に吸収する。発光パネル70は熱伝導材料、例えば、透明結晶、金属材料又は熱伝導性シリコーンゴムなどであることがより好ましく、材料は光を透過でき、又は開けた孔が設けられる。 One end of the cooling conductive member 73 is connected to the low temperature surface 11 of the semiconductor cooler in a fast heat transfer manner, and the other end is connected to the light emitting panel 70 in a fast cooling conduction manner. The cooling conductive member 73 is a heat pipe, a VC temperature equalizing plate, a superheat conductive pipe or a superheat conductive plate. Preferably, the superheat conductive pipe is an aluminum superconducting tube, and the superheat conductive plate is an aluminum superconducting plate. According to the shape of the light emitting panel 70 and the desired cooling effect, the end of the cooling conductive member 73 that contacts the light emitting panel 70 may be designed in an annular shape or an annular cooling conductive member may be provided, so as to be in close contact with the periphery of the light emitting panel 70 to quickly absorb the heat of the working surface 70 or the surrounding environment of the working surface 70. More preferably, the light emitting panel 70 is a heat conductive material, such as a transparent crystal, a metal material or a heat conductive silicone rubber, and the material can transmit light or has holes.

半導体クーラー10の高温面13がヒートパイプ、超熱伝導パイプ、超熱伝導プレート又はVCからなる熱伝導ケース251の外壁に設けられ、又は、ヒートパイプ、超熱伝導パイプ、超熱伝導プレート又はVCからなる熱伝導ケース251は半導体クーラーの高温面として直接機能する。ヒートパイプ、超熱伝導パイプ、超熱伝導プレート又はVCからなる熱伝導ケース251の内壁に設けられた放熱板252は放熱面積を増加させるためのものであり、ファンの内部の空気流路内に位置する。高温面13に生じた熱は熱伝導ケース251により放熱板252に迅速に伝導し、ファンの空気流路内の空気が熱伝導ケース251及び放熱板の熱を持ち去り、ファンの換気口(排気)から排出される。半導体クーラーの低温面11は冷却伝導部材73の一端に接続され、より好ましくは最大接触面積で又は急速熱伝導により接続され、冷却伝導部材の他端は折り曲げられて環状の冷却伝導部材に最大接触面積で接続され、発光パネル70は環状の冷却伝導部材に最大接触面積で接続される。半導体クーラー10は冷却伝導部材73により発光パネル70を迅速に冷却伝導する。環状の冷却伝導部材はヒートパイプ、VC温度均一化プレート、超熱伝導パイプ又は超熱伝導プレートである。好ましくは、超熱伝導パイプはアルミニウム製超伝導管であり、超熱伝導プレートはアルミニウム製超伝導板である。より好ましくは、冷却伝導部材73はアルミニウム製超伝導管又はアルミニウム製超伝導板である。ファン25は送風機の1種であってもよく、内部がキャビティを形成したファンカバー253と、キャビティ内に取り付けられたインペラ250とを含む。 The high-temperature surface 13 of the semiconductor cooler 10 is provided on the outer wall of a heat conduction case 251 made of a heat pipe, a superconducting heat pipe, a superconducting heat plate, or a VC, or the heat conduction case 251 made of a heat pipe, a superconducting heat pipe, a superconducting heat plate, or a VC functions directly as the high-temperature surface of the semiconductor cooler. The heat sink 252 provided on the inner wall of the heat conduction case 251 made of a heat pipe, a superconducting heat pipe, a superconducting heat plate, or a VC is for increasing the heat dissipation area and is located in the air flow path inside the fan. The heat generated on the high-temperature surface 13 is quickly conducted to the heat sink 252 by the heat conduction case 251, and the air in the air flow path of the fan carries away the heat of the heat conduction case 251 and the heat sink, and is discharged from the ventilation port (exhaust) of the fan. The cold surface 11 of the semiconductor cooler is connected to one end of the cooling conductive member 73, more preferably with a maximum contact area or by rapid heat conduction, the other end of the cooling conductive member is bent and connected to the annular cooling conductive member with a maximum contact area, and the light emitting panel 70 is connected to the annular cooling conductive member with a maximum contact area. The semiconductor cooler 10 rapidly conducts cooling to the light emitting panel 70 through the cooling conductive member 73. The annular cooling conductive member is a heat pipe, a VC temperature uniforming plate, a superheat conductive pipe, or a superheat conductive plate. Preferably, the superheat conductive pipe is an aluminum superconducting tube, and the superheat conductive plate is an aluminum superconducting plate. More preferably, the cooling conductive member 73 is an aluminum superconducting tube or an aluminum superconducting plate. The fan 25 may be a type of blower, and includes a fan cover 253 having a cavity formed therein and an impeller 250 attached within the cavity.

上記の各実施例では、半導体クーラー10に温度センサモジュール(NTC)15を内蔵することにより半導体クーラーの低温面11又は高温面13の温度を検出し、且つ温度データを制御回路基板に伝達し、制御回路基板上の主制御ユニットにより処理してから半導体クーラーの正負電極120の給電を制御し、半導体クーラーの動作状態を調整し、温度が所期の温度範囲内に正確に一定することを実現し、正確な温度制御を実現する。半導体クーラー10を応用した美容器100は、皮膚に接触する作業面又は端面の温度を正確に制御することを実現することができ、温度センサモジュール(NTC)が内蔵され、構造が簡単で、且つ内蔵された温度センサモジュール(NTC)を損傷から保護することができる。 In each of the above embodiments, the semiconductor cooler 10 is equipped with a built-in temperature sensor module (NTC) 15 to detect the temperature of the low temperature surface 11 or high temperature surface 13 of the semiconductor cooler, and the temperature data is transmitted to the control circuit board, processed by the main control unit on the control circuit board, and then the power supply to the positive and negative electrodes 120 of the semiconductor cooler is controlled, the operating state of the semiconductor cooler is adjusted, and the temperature is accurately and consistently within the desired temperature range, thereby achieving accurate temperature control. The beauty device 100 using the semiconductor cooler 10 can accurately control the temperature of the working surface or end surface that comes into contact with the skin, has a built-in temperature sensor module (NTC), is simple in structure, and can protect the built-in temperature sensor module (NTC) from damage.

以上、本願の実施例を図示し説明してきたが、当業者であれば理解できるように、本願の原理及び主旨を逸脱せずにこれらの実施例に対して種々の変化、修正、置換及び変形を行うことができ、本願の保護範囲は添付の請求項及びその均等範囲により限定される。 Although the embodiments of the present application have been illustrated and described above, as will be understood by those skilled in the art, various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of the present application, and the scope of protection of the present application is limited by the appended claims and their equivalents.

Claims (3)

ヘッド部の端面が作業面を形成し、前記作業面が皮膚に接触して美容又は理学診療処理をする美容又は理学療法器具であって、
内部に取り付けられた半導体クーラーと、
前記作業面に接するように設けられた冷却伝導部材と、
主制御ユニットと、を備え、
前記ヘッド部には発光口が設けられ、前記発光口には発光パネルが覆設され、前記発光パネルの外壁面が前記作業面として機能し、皮膚に接触可能であり、
前記半導体クーラーは、半導体電気双極子層と、温度センサモジュールと、を内蔵し、
前記半導体電気双極子層と前記温度センサモジュールとは低温面と高温面との間に位置し、前記温度センサモジュールは高温面の内側面に密着し、又は低温面の内側面に密着し、又は、前記温度センサモジュールが低温面又は高温面の外側面に設けられ、低温面又は高温面の外側面に密着し、前記温度センサモジュールが高温面又は低温面の温度を検出して温度データを前記主制御ユニットに伝送することにより、前記主制御ユニットは受信した温度データに基づいて半導体クーラーの給電を制御するために使用され、
記半導体クーラーの低温面と前記発光パネルの前記作業面とが前記冷却伝導部材で接続されることにより前記作業面を冷却し、
前記半導体電気双極子層のp型及びn型半導体電気双極子粒子は環状帯として配置され、中央の内部領域内にはp型及びn型半導体電気双極子粒子が設けられず、
前記半導体電気双極子層の中央内部領域に対応して、前記低温面及び/又は高温面が貫通孔として設けられ、又は、前記低温面及び/又は高温面のうちの一方が透明基板であることに対応して他方が貫通孔を形成し、前記貫通孔が光源からの光を通過させる発光領域を形成し、
前記発光領域から射出された光が使用者の皮膚に対して美容処理をすることを特徴とする美容又は理学療法器具。
A cosmetic or physical therapy instrument in which an end surface of a head portion forms a working surface, and the working surface comes into contact with skin to perform cosmetic or physical therapy treatment,
A semiconductor cooler installed inside,
a cooling conductive member provided in contact with the work surface;
A main control unit,
a light emitting port is provided in the head portion, a light emitting panel is provided to cover the light emitting port, and an outer wall surface of the light emitting panel functions as the work surface and is capable of contacting the skin;
The semiconductor cooler includes a semiconductor electric dipole layer and a temperature sensor module;
The semiconductor electric dipole layer and the temperature sensor module are located between the low temperature surface and the high temperature surface, the temperature sensor module is in close contact with the inner surface of the high temperature surface, or is in close contact with the inner surface of the low temperature surface, or the temperature sensor module is provided on the outer surface of the low temperature surface or the high temperature surface, and is in close contact with the outer surface of the low temperature surface or the high temperature surface; the temperature sensor module detects the temperature of the high temperature surface or the low temperature surface and transmits the temperature data to the main control unit, so that the main control unit is used to control the power supply of the semiconductor cooler according to the received temperature data;
the low temperature surface of the semiconductor cooler and the work surface of the light emitting panel are connected by the cooling conductive member to cool the work surface;
the p-type and n-type semiconductor electric dipole particles of the semiconductor electric dipole layer are arranged as annular bands, and no p-type or n-type semiconductor electric dipole particles are provided within a central inner region;
The low temperature surface and/or the high temperature surface are provided as through holes corresponding to the central inner region of the semiconductor electric dipole layer, or one of the low temperature surface and/or the high temperature surface is a transparent substrate, and the other forms a through hole, and the through hole forms a light emitting region that transmits light from a light source;
A cosmetic or physical therapy device, characterized in that light emitted from the light emitting region performs cosmetic treatment on the skin of a user.
ハウジングと、前記光源を有しハウジング内に取り付けられた光源アセンブリ、電源アセンブリ、制御回路基板及び放熱アセンブリとをさらに備え、
前記半導体クーラーの正負電極及び内蔵された温度センサモジュールは前記制御回路基板に電気的に接続され、前記制御回路基板に主制御ユニットが設けられ、前記放熱アセンブリは半導体クーラーの高温面を放熱するために使用されることを特徴とする請求項1に記載の美容又は理学療法器具。
a housing; a light source assembly having the light source mounted within the housing, a power supply assembly, a control circuit board, and a heat dissipation assembly;
2. The beauty or physical therapy device according to claim 1, wherein the positive and negative electrodes of the semiconductor cooler and the built-in temperature sensor module are electrically connected to the control circuit board, the control circuit board is provided with a main control unit, and the heat dissipation assembly is used to dissipate heat from a high-temperature surface of the semiconductor cooler.
前記放熱アセンブリはファンを含み、前記ファンは熱伝導ケースを含み、前記半導体クーラーの高温面と前記熱伝導ケースとは熱伝導的に接続され、又は、前記熱伝導ケースは半導体クーラーの高温面として直接機能し、前記熱伝導ケースはヒートパイプ、超熱伝導パイプ、超熱伝導プレート又は温度均一化プレートのうちの1つ又は複数の組合せを含み、前記冷却伝導部材はヒートパイプ、温度均一化プレート、超熱伝導パイプ又は超熱伝導プレートであることを特徴とする請求項2に記載の美容又は理学療法器具。 The beauty or physical therapy device according to claim 2, characterized in that the heat dissipation assembly includes a fan, the fan includes a thermally conductive case, the high temperature surface of the semiconductor cooler and the thermally conductive case are thermally conductively connected or the thermally conductive case directly functions as the high temperature surface of the semiconductor cooler, the thermally conductive case includes one or more combinations of a heat pipe, a superheat conductive pipe, a superheat conductive plate, or a temperature equalizing plate, and the cooling conductive member is a heat pipe, a temperature equalizing plate, a superheat conductive pipe, or a superheat conductive plate.
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